Corrosion-resistant perovskite solar cell and preparation method thereof

Abstract

The application relates to the technical field of photovoltaic cells, and discloses a corrosion-resistant perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises an electrically-conductive substrate, a hole transport layer, a perovskite layer, an interface modification layer, an electron transport layer, a composite barrier layer and a metal electrode. The composite barrier layer is based on a benzimidazole derivative, and the composite cathode barrier layer is prepared by blending 2-mercaptobenzimidazole and bathocuproine (BCP). The composite barrier layer and the metal electrode can be adsorbed to form a dense corrosion-resistant layer, thereby inhibiting the corrosion of halogen ions Br ‑ 、 ‑ to the metal electrode. The application can effectively alleviate the electrochemical corrosion of the metal electrode in a halogen environment, enhance the corrosion resistance of the metal electrode, and further improve the long-term stability of the perovskite device.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic cell technology, and more specifically, to a corrosion-resistant perovskite solar cell and its preparation method. Background Technology

[0002] With traditional energy sources becoming increasingly scarce and environmental problems intensifying, humanity's demand for clean and renewable energy is becoming ever more urgent. Against this backdrop, developing new energy sources to replace traditional energy has become an inevitable trend. Solar energy, with its wide distribution and abundant reserves, has become a clean energy source with great application prospects, and solar cells can achieve the efficient and direct conversion of solar energy into electricity. After years of technological development, solar cells have evolved to their third generation. The first two generations of cells, limited by high costs and complex manufacturing processes, struggled to meet the demands of large-scale industrialization. The third-generation solar cells, however, have attracted significant attention in the new energy field due to their low cost, excellent photoelectric conversion efficiency, and ability to be fabricated into flexible devices.

[0003] Currently, perovskite solar cells (PSCs), as representatives of third-generation solar cells, have attracted widespread attention due to their advantages such as high absorption coefficient, long carrier diffusion range, and excellent charge mobility (Nano Letters, 14 (2014): 2584-259; Science, 347 (2015): 967-70). Since their first report in 2009, PSCs have increased their power conversion efficiency (PCE) from an initial 3.8% to 27% in just ten years (Journal of the American Chemical Society, 131 (2009): 6050-6051; Nature, 598 (2021): 444-450; Science, 390 (2025): 638-642). Although PSCs have achieved significant performance improvements, their commercial applications still face the challenge of insufficient device stability. The stability problem of PSCs not only occurs in the perovskite layer but also in the metal electrodes. On the one hand, volatile decomposition products or halide anions in the perovskite layer diffuse to the metal electrode, causing corrosion of the metal electrode and halide deficiency in the perovskite light absorption layer. On the other hand, the metal electrode undergoes internal diffusion under thermal and / or photoactivation, forming insulating metal halides or defect states at the perovskite interface or bulk phase, ultimately leading to continuous degradation of device efficiency. Therefore, existing perovskite solar cells suffer from ion migration and easy corrosion of metal electrodes, which seriously restricts the long-term stability of perovskite solar cells. Therefore, some teams have started to develop a series of measures to suppress halide ion migration in perovskite and improve device performance and stability, such as: (1) By introducing multifunctional molecules to passivate the interface between the perovskite layer and the charge transport layer, ion migration can be effectively suppressed and the defect state density can be reduced. Functional groups such as carboxyl (-C=O) and ester (-COOR) can interact with uncoordinated Pb in the perovskite layer. 2+ (1) Coordination is formed and the interfacial energy level is lowered, which is more conducive to electron extraction; (2) Trimethylolpropane triacrylate (TMTA) is introduced into the perovskite precursor solution, so that it is chemically anchored at the perovskite grain boundary during the film formation process, and then in-situ crosslinking polymerization is achieved by heat treatment, which significantly improves the light resistance and water resistance of the perovskite film; (3) In terms of physical isolation, the use of atomic layer deposition (ALD) and other techniques to prepare dense metal oxides, polymers and other methods can effectively isolate the diffusion of halide ions, enhance the device's resistance to water and oxygen, and significantly improve the device's service life. Although these methods can effectively suppress the problem of easy corrosion of metal electrodes, there are still problems such as complex preparation process and high cost.

[0004] Therefore, developing a perovskite solar cell with good operational stability, long service life, simple fabrication process, all-solution processing, and corrosion resistance is of great practical significance. Summary of the Invention

[0005] In view of this, the present invention proposes a corrosion-resistant perovskite solar cell and its preparation method, aiming to solve the problem of insufficient long-term stability of perovskite solar cells in the current technology.

[0006] To achieve the above-mentioned objectives, the present invention provides the following technical solution: This invention proposes a corrosion-resistant perovskite solar cell, which sequentially comprises a conductive substrate, a hole transport layer, a perovskite layer, an interface modification layer, an electron transport layer, a composite barrier layer, and a metal electrode.

[0007] Furthermore, the conductive substrate is either tin oxide or nanowire, wherein the tin oxide is one of fluorine-doped tin oxide or indium-doped tin oxide; and the nanowire is one of activated carbon fiber fabric, silver nanowire, or copper nanowire.

[0008] Furthermore, the hole transport layer is any one or more of (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid), poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine) and inorganic hole materials.

[0009] Furthermore, the perovskite layer is a blend of halogen atoms or a blend of cationic perovskites, wherein the blend of halogen atoms includes: methylamine lead iodide / methylamine lead iodide; the blend of cationic perovskites includes one or more of formamidinium methylamine lead iodide, formamidinium methylamine lead iodide bromine blended perovskite, cesium-doped formamidinium methylamine lead iodide, and cesium-doped formamidinium methylamine lead iodide bromine blended perovskite.

[0010] Furthermore, the interface modification layer is one or more of ethyl ammonium iodide, phenylethyl ammonium bromide, 1,4-piperidinediamine dihydroiodate, and phenylethyl ammonium chloride.

[0011] Furthermore, the electron transport layer is any one or more of fullerenes and their derivatives, titanium dioxide, and tin oxide, wherein the fullerenes and their derivatives are C60 and PCBM.

[0012] Furthermore, the metal electrode can be any one of silver, copper, or aluminum.

[0013] Furthermore, the composite barrier layer uses copper bath as a matrix, and copper bath is incorporated into it through a simple additive strategy. The additive doping concentration is controlled at 0.05~0.5 mg / mL, the copper bath concentration is controlled at 0.5~1 mg / mL, and the solvent is isopropanol. The additive is a benzimidazole derivative, any one or more of 2-mercapto-5-aminobenzimidazole, 2-mercaptobenzimidazole, and 2-mercapto-5-methylbenzimidazole.

[0014] A method for fabricating a corrosion-resistant perovskite solar cell includes the following steps: (1) A hole transport material is spin-coated onto the surface of a conductive substrate and then annealed to obtain a hole transport layer; (2) A perovskite precursor solution was spin-coated onto the surface of the hole transport layer, and then annealed and crystallized to obtain a perovskite layer. (3) Spin-coating an interface modification material onto the surface of the perovskite layer and heat-treating it to obtain an interface modification layer; (4) Spin-coating an electron transport material onto the surface of the interface modification layer and heat-treating it to obtain an electron transport layer; (5) A composite barrier layer material is spin-coated onto the surface of the electron transport layer without heat treatment to obtain the composite barrier layer; (6) A metal electrode is vacuum-deposited on the surface of the composite barrier layer to obtain a corrosion-resistant perovskite solar cell.

[0015] Furthermore, in step (1), the annealing temperature is 80~100℃ and the time is 5~10 minutes; in step (2), the annealing temperature is 80~140℃ and the time is 20~40 minutes; in step (3), the heat treatment temperature is 80~120℃ and the time is 5~20 minutes; in step (4), the heat treatment temperature is 80~110℃ and the time is 5~40 minutes.

[0016] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. This invention proposes a corrosion protection method for metal electrodes in metal halide perovskite solar cells, significantly improving device performance and stability. While traditional physical barrier layers can block halide ion migration, they generally suffer from poor interfacial contact and complex fabrication processes, making them unsuitable for commercial applications. Furthermore, commonly used barrier layers, such as copper bath resins, are prone to decomposition under long-term high-temperature environments, failing to continuously block the chemical reaction between the perovskite layer and the metal electrode. Therefore, this invention prepares a composite barrier layer based on copper bath resins. This layer not only has a simple fabrication process and can be processed entirely from solution, but also provides highly efficient protection for the metal electrode. The sulfur (S) atoms in the composite barrier layer can undergo coordination reactions with the metal electrode to form stable complexes, constructing a dense anti-corrosion protective layer on the electrode surface. This effectively protects the low-work-function metal electrode of the perovskite solar cell and inhibits its electrochemical corrosion in a perovskite atmosphere. Simultaneously, it can block the Br₂ in the perovskite layer.- I - Cl - The bidirectional diffusion and migration of halide ions and metal ions inhibits the chemical corrosion reaction between halide ions and metal electrodes, significantly improving the working stability and lifespan of perovskite solar cells.

[0017] 2. This invention uses a specific material blended with copper bath solvent to prepare an anti-corrosion composite barrier layer. This process eliminates the need for high-temperature sintering, complex interface modification, and harmful reagents. The operation is simple, controllable, and easily industrialized. Furthermore, the entire preparation process generates no toxic gases, waste liquids, or other harmful waste, strictly adhering to green production principles. This not only significantly reduces environmental treatment costs during production but also effectively ensures process stability and consistency in mass production, thereby further enhancing the feasibility and practical industrial value of perovskite solar cells for large-scale application.

[0018] 3. To improve the corrosion resistance of metal electrodes, this invention inserts a composite barrier layer between the electron transport layer and the metal electrode. The composite barrier layer is prepared by blending copper bath and benzimidazole derivatives. This layer interacts with the metal electrode to form an anti-corrosion layer, effectively blocking the migration of halide ions between the perovskite layer and the electrode. This specifically solves the problem of easy corrosion of metal electrodes in existing devices. Moreover, the composite barrier layer is simple to prepare, green, environmentally friendly and pollution-free, and suitable for large-scale production. Attached Figure Description

[0019] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings: Figure 1 This is the JV curve of the perovskite solar cell in an embodiment of the present invention; Figure 2 This is the X-ray photoelectron spectrum of Ag 3d according to an embodiment of the present invention; Figure 3 This is the X-ray photoelectron spectrum of embodiment S2p of the present invention; Figure 4 It is the redox curve of silver; Figure 5 It is the Tafel polarization curve of silver; Figure 6 These are X-ray diffraction patterns of different device types after 50 hours of thermal aging; Figure 7 This is a schematic diagram of the structural composition of a perovskite solar cell in an embodiment of the present invention. Detailed Implementation

[0020] Various exemplary embodiments of the present invention will now be described in detail. This detailed description should not be considered as a limitation of the present invention, but rather as a more detailed description of certain aspects, features, and embodiments of the present invention. It should be understood that the terminology used in this invention is merely for describing particular embodiments and is not intended to limit the present invention.

[0021] Furthermore, regarding the numerical ranges in this invention, it should be understood that each intermediate value between the upper and lower limits of the range is also specifically disclosed. Every smaller range between any stated value or intermediate value within a stated range, and any other stated value or intermediate value within said range, is also included within this invention. The upper and lower limits of these smaller ranges may be independently included or excluded from the range.

[0022] Unless otherwise stated, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. While only preferred methods and materials have been described herein, any methods and materials similar or equivalent to those described herein may be used in the implementation or testing of this invention. All references to this specification are incorporated by way of citation to disclose and describe methods and / or materials associated with those references. In the event of any conflict with any incorporated reference, the content of this specification shall prevail.

[0023] Various modifications and variations can be made to the specific embodiments described in this specification without departing from the scope or spirit of the invention, as will be apparent to those skilled in the art. Other embodiments derived from this specification will also be apparent to those skilled in the art. This specification and embodiments are merely exemplary.

[0024] The terms “include,” “including,” “have,” “contain,” etc., used in this article are all open-ended terms, meaning that they include but are not limited to.

[0025] This invention proposes a corrosion-resistant perovskite solar cell, which sequentially comprises a conductive substrate, a hole transport layer, a perovskite layer, an interface modification layer, an electron transport layer, a composite barrier layer, and a metal electrode.

[0026] In this invention, the conductive substrate is either tin oxide or nanowire, wherein the tin oxide is one of fluorine-doped tin oxide or indium-doped tin oxide; and the nanowire is one of activated carbon fiber fabric, silver nanowire, or copper nanowire.

[0027] This invention adds a conductive substrate to a corrosion-resistant perovskite solar cell. The conductive substrate serves as the support carrier and bottom electrode of the cell, providing good conductivity and light transmittance, allowing sunlight to be efficiently incident on the perovskite layer, while collecting and transferring charges on the substrate side, thus constructing the basic conductive path of the cell.

[0028] In this invention, the hole transport layer is any one or more of (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid), poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine) and inorganic hole materials.

[0029] This invention adds a hole transport layer to a corrosion-resistant perovskite solar cell. The hole transport layer is responsible for efficiently collecting and transporting photogenerated holes and blocking photogenerated electrons from diffusing to the substrate side, thereby achieving effective electron-hole separation. It also optimizes the interface energy level arrangement, improves hole extraction efficiency, and reduces interface charge recombination loss.

[0030] In this invention, the perovskite layer is a blend of halogen atoms or a blend of cationic perovskites. The blend of halogen atoms includes: methylamine lead iodide / methylamine lead iodide; the blend of cationic perovskites includes one or more of formamidinium methylamine lead iodide, formamidinium methylamine lead iodide bromine blended perovskite, cesium-doped formamidinium methylamine lead iodide, and cesium-doped formamidinium methylamine lead iodide bromine blended perovskite.

[0031] This invention adds a perovskite layer to a corrosion-resistant perovskite solar cell. The perovskite layer serves as the light-absorbing active core layer of the cell, absorbing sunlight and generating photogenerated electron-hole pairs to complete the initial conversion of solar energy into electrical energy. It is a key functional layer that determines the photoelectric conversion efficiency of the cell.

[0032] In this invention, the interface modification layer is one or more of ethyl ammonium iodide, phenylethyl ammonium bromide, 1,4-piperidinediamine dihydroiodate, and phenylethyl ammonium chloride.

[0033] This invention adds an interface modification layer to a corrosion-resistant perovskite solar cell. The interface modification layer passivates defects at the interface between the perovskite layer and the electron transport layer, reduces the interface defect state density, inhibits the migration of halide ions in the perovskite layer toward the electrode, improves interface contact characteristics, and enhances charge transport and device stability.

[0034] In this invention, the electron transport layer is any one or more of fullerenes and their derivatives, titanium dioxide, and tin oxide, wherein the fullerenes and their derivatives are C60 and PCBM.

[0035] This invention adds an electron transport layer to a corrosion-resistant perovskite solar cell. The electron transport layer is responsible for efficiently collecting and transporting photogenerated electrons and blocking photogenerated holes from diffusing to the metal electrode side, thereby achieving efficient separation and directional transport of charges; optimizing electron extraction efficiency and reducing charge recombination.

[0036] In this invention, the metal electrode is any one of silver, copper, and aluminum.

[0037] This invention adds a metal electrode to a corrosion-resistant perovskite solar cell. The metal electrode serves as the top electrode of the cell, collecting and outputting electrons transmitted through the electron transport layer to construct a complete external circuit conductive path for the cell, thereby enabling the external output of photogenerated current.

[0038] In this invention, the composite barrier layer uses copper bath as the matrix and is incorporated into the copper bath through a simple additive strategy. The additive doping concentration is controlled at 0.05~0.5 mg / mL, the copper bath concentration is controlled at 0.5~1 mg / mL, and the solvent is isopropanol. The additive is a benzimidazole derivative, any one or more of 2-mercapto-5-aminobenzimidazole, 2-mercaptobenzimidazole, and 2-mercapto-5-methylbenzimidazole.

[0039] This invention adds a composite barrier layer to a corrosion-resistant perovskite solar cell. In this composite barrier layer, sulfur atoms coordinate with the metal electrode to form a dense anti-corrosion layer, inhibiting the electrochemical corrosion of the metal electrode by halide ions; and blocking Br in the perovskite layer. - I - Bidirectional diffusion and migration of isohalogen ions and metal ions; auxiliary electron transport, synergistically improving the long-term stability of the device.

[0040] A method for fabricating a corrosion-resistant perovskite solar cell includes the following steps: (1) A hole transport material is spin-coated onto the surface of a conductive substrate and then annealed to obtain a hole transport layer; (2) A perovskite precursor solution was spin-coated onto the surface of the hole transport layer, and then annealed and crystallized to obtain a perovskite layer. (3) Spin-coating an interface modification material onto the surface of the perovskite layer and heat-treating it to obtain an interface modification layer; (4) Spin-coating an electron transport material onto the surface of the interface modification layer and heat-treating it to obtain an electron transport layer; (5) A composite barrier layer material is spin-coated onto the surface of the electron transport layer without heat treatment to obtain the composite barrier layer; (6) A metal electrode is vacuum-deposited on the surface of the composite barrier layer to obtain a corrosion-resistant perovskite solar cell.

[0041] In this invention, the annealing temperature in step (1) is 80~100℃ and the time is 5~10 minutes; the annealing temperature in step (2) is 80~140℃ and the time is 20~40 minutes; the heat treatment temperature in step (3) is 80~120℃ and the time is 5~20 minutes; and the heat treatment temperature in step (4) is 80~110℃ and the time is 5~40 minutes.

[0042] In this invention, unless otherwise specified, all raw materials required for preparation are commercially available products well known to those skilled in the art.

[0043] The following is in conjunction with the appendix Figure 1-6 The embodiments and examples provide a detailed description of the technical solutions provided by the present invention, but they should not be construed as limiting the scope of protection of the present invention.

[0044] Example 1 1) On the surface of an indium-doped tin oxide (ITO) transparent conductive substrate, a hole transport material (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid is spin-coated and heat-treated at 100 °C for 5 min to form a dense hole transport layer with a thickness of 5~15 nm on the substrate surface. 2) Spin-coating Cs onto the surface of the hole transport layer x MA y FA 1-x-y PbI3 (where 1 > x > 0, 1 > y > 0, and 1 > x + y > 0) precursor solution was annealed at 105 °C for 35 min; 3) Prepare a perovskite layer film; then spin-coat a phenylethyl ammonium iodide solution onto the surface of the perovskite layer with a coating amount of 50 μL, and heat-treat at 100℃ for 15 min to prepare an interface modification layer.

[0045] 4) Spin-coat the surface of the interface modification layer with fullerene derivatives (PCBM) to prepare an electron transport layer with a thickness of 20~40 nm, and perform thermal annealing at 80~100 °C.

[0046] 5) Coat the electron transport layer with a composite blocking layer. The composite blocking layer is composed of 0.05~0.5 mg / mL of 2-mercaptobenzimidazole and its derivatives dissolved in a 0.5 mg / mL copper hydroxide solution. The coating method can be slot coating or spin coating.

[0047] 5) Under vacuum conditions, the silver metal electrode is deposited onto the composite barrier layer by vapor deposition, with a thickness of 100~150nm.

[0048] Comparative Example 1 1) On the surface of an indium-doped tin oxide (ITO) transparent conductive substrate, a hole transport material (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid is spin-coated and heat-treated at 100 °C for 15 min to form a dense hole transport layer with a thickness of 5~15 nm on the substrate surface. 2) Spin-coating Cs onto the surface of the hole transport layer x MAyFA 1-x-y PbI3 (where 1 > x > 0, 1 > y > 0, and 1 > x + y > 0) precursor solution was annealed at 105 °C for 35 min; 3) Prepare a perovskite layer film; then spin-coat a phenylethyl ammonium iodide solution onto the surface of the perovskite layer with a coating amount of 50 μL, and heat-treat at 100℃ for 5 min to prepare an interface modification layer.

[0049] 4) Spin-coat the surface of the interface modification layer with fullerene derivatives (PCBM) to prepare an electron transport layer with a thickness of 5~40 nm, and perform thermal annealing at 80~100 °C.

[0050] 5) Non-spin-coated composite barrier layer: A vacuum thermal evaporation process is used to deposit a metallic silver (Ag) electrode on the surface of the electron transport layer. The evaporation thickness is 100~150nm, thus obtaining the target perovskite solar cell device.

[0051] Performance testing The photoelectric conversion performance test uses a solar cell performance tester, which fixes the perovskite solar cell under test on the test platform, connects the electrode probe, and scans and acquires the current-voltage (JV) curve under forward bias (-0.2V~1.2V) and reverse bias (1.2V~-0.2V), and detects and extracts the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), and photoelectric conversion efficiency (PCE).

[0052] The X-ray photoelectron spectroscopy (XPS) test was performed using an X-ray photoelectron spectrometer. Pure silver film, copper bath-modified silver film, and composite barrier layer modified silver film samples were taken respectively. Narrow scan tests were performed on Ag 3d and S 2p orbitals to analyze the chemical state of silver, the coordination effect of sulfur with silver, and to detect the binding energy of characteristic peaks, peak position shift, and chemical bonding state.

[0053] The electrochemical corrosion performance test adopted a three-electrode system with a perovskite-simulated halogen electrolyte at room temperature. Cyclic voltammetry was performed with a scanning voltage range of 0–0.6 V and a scanning rate of 50 mV / s, recording the redox curve of the silver electrode. Tafel polarization was performed with a scanning voltage range of ±0.2 V (relative to open circuit potential) and a scanning rate of 10 mV / s, recording the Tafel polarization curve, detecting the corrosion potential and corrosion current density, and evaluating the electrode's corrosion resistance.

[0054] The thermal aging stability and phase composition tests were conducted using a vacuum oven and X-ray diffractometer (XRD). The test conditions were: thermal aging temperature 85℃, aging time 50 h, and air atmosphere. The specific operation involved simultaneously placing devices without a barrier layer, devices with a pure BCP barrier layer, and devices with a composite barrier layer into the oven for aging. After aging, XRD was used for testing, with a scanning range of 10°~50°, to analyze the decomposition of perovskite phases and electrode corrosion products. The test indicators were: PbI2 diffraction peak intensity and perovskite main peak retention rate, to determine the degree of device aging.

[0055] according to Figure 1-6 As shown, the photoelectric conversion efficiency of the device in Example 1 is higher than that of the device in Comparative Example 1, and there is no significant decay after thermal aging at 85°C for 50 hours. In contrast, the device in Comparative Example 1 suffers severe electrode corrosion after thermal aging, resulting in a significant decrease in efficiency.

[0056] This invention addresses the problem of halide ion corrosion of metal electrodes by introducing a benzimidazole derivative / bath copper-based composite barrier layer between the electron transport layer and the metal electrode, thereby improving device stability. Furthermore, the composite barrier layer provides efficient corrosion protection for the metal electrode. The process is simple and the performance is excellent, providing technical support for the commercial application of perovskite solar cells.

[0057] The above embodiments are merely preferred embodiments of the present invention and are not intended to limit the present invention. The scope of protection of the present invention is determined by the appended claims.

[0058] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the specific implementation of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A corrosion-resistant perovskite solar cell, characterized in that, It consists of, in sequence, a conductive substrate, a hole transport layer, a perovskite layer, an interface modification layer, an electron transport layer, a composite blocking layer, and a metal electrode.

2. The corrosion-resistant perovskite solar cell according to claim 1, characterized in that, The conductive substrate is either tin oxide or nanowire, wherein the tin oxide is one of fluorine-doped tin oxide or indium-doped tin oxide; and the nanowire is one of activated carbon fiber fabric, silver nanowire, or copper nanowire.

3. The corrosion-resistant perovskite solar cell according to claim 1, characterized in that, The hole transport layer is any one or more of (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid), poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine), and inorganic hole materials; the thickness of the hole transport layer is 5~30 nm.

4. The corrosion-resistant perovskite solar cell according to claim 1, characterized in that, The perovskite layer is a blend of halogen atoms or a blend of cationic perovskites. The blend of halogen atoms includes: methylamine lead iodide / methylamine lead iodide; the blend of cationic perovskites includes one or more of formamidinium methylamine lead iodide, formamidinium methylamine lead iodide bromine blended perovskite, cesium-doped formamidinium methylamine lead iodide, and cesium-doped formamidinium methylamine lead iodide bromine blended perovskite; the thickness of the perovskite layer is 400 nm to 1000 nm.

5. The corrosion-resistant perovskite solar cell according to claim 1, characterized in that, The interface modification layer is one or more of ethyl ammonium iodide, phenylethyl ammonium bromide, 1,4-piperidinediamine dihydroiodate, and phenylethyl ammonium chloride.

6. The corrosion-resistant perovskite solar cell according to claim 1, characterized in that, The electron transport layer is any one or more of fullerenes and their derivatives, titanium dioxide, and tin oxide, wherein the fullerenes and their derivatives are C60 and PCBM; the thickness of the electron transport layer is 20~60nm.

7. A corrosion-resistant perovskite solar cell according to claim 1, characterized in that, The metal electrode is any one of silver, copper, and aluminum; the thickness of the metal electrode is 100~150nm.

8. The corrosion-resistant perovskite solar cell according to claim 1, characterized in that, The composite barrier layer uses copper bath as a matrix, which is incorporated into the copper bath through a simple additive strategy. The additive concentration is controlled at 0.05~0.5 mg / mL, the copper bath concentration is controlled at 0.5~1 mg / mL, and the solvent is isopropanol. The additive is a benzimidazole derivative, any one or more of 2-mercapto-5-aminobenzimidazole, 2-mercaptobenzimidazole, and 2-mercapto-5-methylbenzimidazole.

9. A method for preparing a corrosion-resistant perovskite solar cell according to any one of claims 1-8, characterized in that, Includes the following steps: (1) A hole transport material is spin-coated onto the surface of a conductive substrate and then annealed to obtain a hole transport layer; (2) A perovskite precursor solution was spin-coated onto the surface of the hole transport layer, and then annealed and crystallized to obtain a perovskite layer. (3) Spin-coating an interface modification material onto the surface of the perovskite layer and heat-treating it to obtain an interface modification layer; (4) Spin-coating an electron transport material onto the surface of the interface modification layer and heat-treating it to obtain an electron transport layer; (5) A composite barrier layer material is spin-coated onto the surface of the electron transport layer without heat treatment to obtain the composite barrier layer; (6) A metal electrode is vacuum-deposited on the surface of the composite barrier layer to obtain a corrosion-resistant perovskite solar cell.

10. The method for preparing a corrosion-resistant perovskite solar cell according to claim 9, characterized in that, In step (1), the annealing temperature is 80~100℃ and the time is 5~10 minutes; in step (2), the annealing temperature is 80~140℃ and the time is 20~40 minutes; in step (3), the heat treatment temperature is 80~120℃ and the time is 5~20 minutes; in step (4), the heat treatment temperature is 80~110℃ and the time is 5~40 minutes.

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