Display device

Abstract

A display device according to one embodiment includes a substrate on which a first sub-pixel is defined, the first sub-pixel including a first light emitting area and a first non-light emitting area surrounding the defined first light emitting area; a first insulating layer on the first non-light emitting area of the substrate; a first reflective electrode disposed on an upper surface and side surfaces of the first insulating layer and disposed in the first light emitting area and the first non-light emitting area; a second insulating layer disposed on the first reflective electrode and exposing an upper surface of the first reflective electrode disposed on the first insulating layer; and a second connection electrode disposed directly on the exposed upper surface of the first reflective electrode.

Description

Technical Field

[0001] This specification relates to an apparatus, and in particular, for example, but not limited to, a display apparatus. Background Technology

[0002] With the development of the information society, the demand for display devices for displaying images has increased, leading to the use of various types of display devices such as liquid crystal displays (LCDs) and organic light-emitting diode (OLEDs).

[0003] In display devices, OLED displays, as a self-emissive type, offer better viewing angles and contrast than LCDs. Furthermore, because they do not require a separate backlight, they are lighter, thinner, and consume less power. In addition, OLED displays can be driven at low DC voltages, have fast response times, and, most importantly, low manufacturing costs.

[0004] Recently, there has been an increasing demand for augmented reality (AR), virtual reality (VR), or equivalent ultra-high resolution display devices that use this type of OLED display.

[0005] The descriptions provided in the background section should not be construed as prior art simply because they are mentioned in or associated with that section. The background section may include information describing one or more aspects of the subject matter art, and the descriptions in that section do not limit this disclosure. Summary of the Invention

[0006] This specification relates to providing a display device having an expandable light-emitting area.

[0007] This specification also relates to a display device that can improve the performance of organic light-emitting diodes.

[0008] This specification also relates to providing a low-power display device.

[0009] The purpose of this specification is not limited to the above-mentioned purposes, and other technical purposes can be deduced from the following embodiments.

[0010] According to one embodiment, a display device is provided, comprising: a substrate defining a first sub-pixel, the first sub-pixel including a first light-emitting region and a first non-light-emitting region surrounding the first light-emitting region; a first insulating layer located on the first non-light-emitting region of the substrate; a first reflective electrode disposed on an upper surface and a side surface of the first insulating layer and disposed in the first light-emitting region and the first non-light-emitting region; a second insulating layer disposed on the first reflective electrode and exposed on the upper surface of the first reflective electrode disposed on the first insulating layer; and a second connecting electrode directly disposed on the exposed upper surface of the first reflective electrode.

[0011] Details of other implementation methods are included in the detailed description and accompanying drawings.

[0012] It should be understood that the foregoing general description and the following detailed description are exemplary and illustrative, and are intended to provide further explanation of the claimed inventive concept. Attached Figure Description

[0013] The accompanying drawings illustrate embodiments of the present disclosure and, together with the description, serve to illustrate the principles of the disclosure. The drawings are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this application. In the drawings:

[0014] Figure 1 This is a plan view of a display device according to one embodiment.

[0015] Figure 2 yes Figure 1 A planar image of pixels.

[0016] Figure 3 It is along Figure 2 A cross-sectional view of line A-A' in the diagram.

[0017] Figure 4 It is along Figure 2 A cross-sectional view of line B-B' in the diagram.

[0018] Figure 5 It is along Figure 2 A cross-sectional view of line C-C' in the diagram.

[0019] Figure 6 It is along Figure 2 A cross-sectional view of line D-D' in the diagram.

[0020] Figure 7 It is based on Figure 3 A cross-sectional view of an organic light-emitting diode (OLED).

[0021] Figure 8 yes Figure 3 A cross-sectional view of a modified organic light-emitting diode (OLED).

[0022] Figures 9 to 14 This is a cross-sectional view of each process of a method for manufacturing a display device according to one embodiment.

[0023] Figure 15 This is a cross-sectional view of a pixel in another embodiment.

[0024] Explanation of reference numerals in the attached figures

[0025] 1: Display device

[0026] 2: Substrate

[0027] 3: Insulation layer

[0028] 4: First electrode

[0029] 5: Public Light-Generating Layer

[0030] 6: Second electrode

[0031] 7: Covering layer

[0032] 8: Encapsulation layer

[0033] 9: Color Filter Layer

[0034] BK: Embankment Detailed Implementation

[0035] Hereinafter, embodiments will be described with reference to the accompanying drawings. In this specification, when a component (or region, layer, part, etc.) is described as "on another component," "connected," or "attached to" another component, it means that the component can be directly connected / attached to the other component, or that the other component can be disposed between them.

[0036] The same reference numerals denote the same parts. Additionally, in the drawings, the thickness, scale, and dimensions of parts are exaggerated for the purpose of effectively illustrating the technical content. The term "and / or" includes all one or more combinations that can be defined by the associated configuration.

[0037] Terms such as "first" and "second" may be used to describe various components, but the components are not limited by these terms. These terms are used only for the purpose of distinguishing one component from another. For example, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component, without departing from the scope of the implementation. Unless the context clearly specifies otherwise, the singular includes the plural.

[0038] Terms such as “below,” “lower side,” “above,” and “upper side” are used to describe the relationships between the components shown in the accompanying drawings. These terms are relative concepts and are described relative to the directions indicated by the markings in the drawings.

[0039] It should be understood that terms such as “comprising” or “having” are intended to specify the presence of the features, quantities, steps, operations, components, parts or combinations thereof described herein, and do not preclude the possibility of the presence or addition of one or more other features, quantities, steps, operations, components, parts or combinations thereof.

[0040] In the following description, if a detailed description of a well-known function or configuration related to this document is determined to unnecessarily obscure the gist of the inventive concept, such detailed description will be omitted or may be briefly discussed.

[0041] Any implementation described as an "example" in this article is not necessarily to be interpreted as preferred or superior to other implementations.

[0042] Furthermore, when referring to any size, relative size, etc., the numerical values ​​or corresponding information of the component or feature (e.g., level, range, etc.) should be considered to include tolerances or error ranges that may be caused by various factors (e.g., process factors, internal or external influences, noise, etc.), even if no relevant description is specified. In addition, the term "may" fully encompasses all the meanings of the term "able to".

[0043] When describing temporal relationships, discontinuous cases may be included if the temporal order is described as such as “after,” “following,” “next,” and “before,” unless more restrictive terms such as “just,” “immediately,” or “directly” are used.

[0044] The term “at least one” should be understood to include any and all combinations of one or more of the associated listed items. For example, “at least one of the first element, the second element, and the third element” means a combination of all three listed elements, a combination of any two of the three elements, and each individual element: the first element, the second element, or the third element.

[0045] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the example embodiments pertain. It should also be understood that terms (such as those defined in common dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant field and should not be interpreted in an idealized or overly formal sense unless explicitly defined herein. For example, the terms “part” or “unit” can be applied to, for example, a single circuit or structure, an integrated circuit, a computational block of a circuit arrangement, or any structure configured to perform the functions described herein that would be understood by one of ordinary skill in the art.

[0046] As will be fully understood by those skilled in the art, the features of the various embodiments of this disclosure may be coupled or combined in part or in whole, and may interoperate and be technology-driven in various ways. Embodiments of this disclosure may be performed independently of each other, or may be performed together in an interdependent relationship.

[0047] Figure 1 This is a plan view of a display device according to one embodiment.

[0048] Reference Figure 1According to one embodiment, the display device 1 may include a display area DA comprising a plurality of pixels 20 and a non-display area NDA adjacent to the display area DA. The non-display area NDA may surround the display area DA and may not include pixels 20, thus not generating an image, but the embodiments described herein are not limited thereto. The non-display area NDA may include a first pad area PA1 disposed on the other side of the display area DA in a second direction DR2.

[0049] The gating driver GIP can be disposed in the non-display area NDA on one side and the other side of the display area DA in the first direction. The gating driver GIP can be formed on the substrate 2 in the form of an integrated circuit, but is not limited thereto, and can also be formed in the form of a driver chip. Figure 1 The illustration shows gating drivers GIPs located on the left and right sides of the display area DA, but the embodiments described herein are not limited thereto, and gating drivers GIPs may be located on only one of the left and right sides.

[0050] A connector film (COF) can be attached to a first pad area PA1. A data driver (DIC) can be disposed on the connector film (COF). The data driver (DIC) can be provided in the form of a driver chip, but the embodiments described herein are not limited thereto. One end of the connector film (COF) can be connected to the first pad area PA1, and the other end can include a second pad area PA2. A printed circuit board (PCB) can be connected to the second pad area PA2 of the connector film (COF).

[0051] Figure 2 yes Figure 1 A planar image of pixels. Figure 3 It is along Figure 2 A cross-sectional view of line A-A' in the diagram. Figure 4 It is along Figure 2 A cross-sectional view of line B-B' in the diagram. Figure 5 It is along Figure 2 A cross-sectional view of line C-C' in the diagram. Figure 6 It is along Figure 2 A cross-sectional view of line D-D' in the diagram. Figures 4 to 6 The area in contact with the connection electrode (or reflective electrode) of each sub-pixel is shown.

[0052] Reference Figures 2 to 6 According to one embodiment, the display device 1 includes a substrate 2, first electrodes 41a, 41b and 41c, a common light-emitting layer 5 and a second electrode 6.

[0053] Multiple sub-pixels 21, 22, and 23 are formed on substrate 2. These multiple sub-pixels 21, 22, and 23 can form a single pixel 20 (see [reference]). Figure 1 Multiple pixels can be formed on substrate 2.

[0054] Multiple subpixels 21, 22, and 23 include a first subpixel 21, a second subpixel 22, and a third subpixel 23. Since the first subpixel 21, the second subpixel 22, and the third subpixel 23 can be set sequentially, the second subpixel 22 can be set on one side adjacent to the first subpixel 21 (e.g., the left side), and the third subpixel 23 can be set on one side adjacent to the second subpixel 22 (e.g., the left side).

[0055] Throughout the manual, when two subpixels are set adjacent to each other, it should be interpreted as meaning that there are no other subpixel settings between these two subpixels.

[0056] The first sub-pixel 21 can be configured to emit red (R) light, the second sub-pixel 22 can be configured to emit blue (B) light, and the third sub-pixel 23 can be configured to emit green (G) light, but the implementation of this specification is not limited to this.

[0057] Figure 2 An example is shown where the pixel includes only three subpixels 21, 22, and 23; however, embodiments described herein are not limited to this, and a pixel may include four subpixels. When a pixel includes four subpixels, the pixel may also include a fourth subpixel configured to emit white (W) light.

[0058] Each of the first to third sub-pixels 21, 22, and 23 can be set to have the same size. For example, each of the first to third sub-pixels 21, 22, and 23 can be set to have the same width and the same height. Here, the width can refer to... Figure 1 The horizontal direction (first direction DR1), and the height can be based on Figure 1 The direction perpendicular to the width (second direction DR2), but the implementation of this specification is not limited to this.

[0059] Sub-pixels 21, 22, and 23 may each include light-emitting regions EA1, EA2, and EA3, and non-light-emitting regions NEA1, NEA2, and NEA3. The first sub-pixel 21 may include a first light-emitting region EA1 and a first non-light-emitting region NEA1 surrounding the first light-emitting region EA1; the second sub-pixel 22 may include a second light-emitting region EA2 and a second non-light-emitting region NEA2 surrounding the second light-emitting region EA2; and the third sub-pixel 23 may include a third light-emitting region EA3 and a third non-light-emitting region NEA3 surrounding the third light-emitting region EA3. Each of the light-emitting regions EA1, EA2, and EA3 may be the same area exposed from the embankment BK of the first electrodes 41a, 41b, and 41c, as will be described below.

[0060] First electrodes 41a, 41b, and 41c are patterned for each sub-pixel 21, 22, and 23. That is, one first electrode 41a is formed in the first sub-pixel 21, another first electrode 41b is formed in the second sub-pixel 22, and yet another first electrode 41c is formed in the third sub-pixel 23. The first electrodes 41a, 41b, and 41c can serve as the positive electrode (or anode) of the display device 1. In some embodiments, the first electrodes may include… Figure 2 The reflective electrodes are 42a, 42b and 42c.

[0061] The first electrode 41 and the reflective electrodes 42a, 42b, and 42c can be disposed in each sub-pixel 21, 22, and 23. The first electrode 41 may include a first electrode 41a disposed in the first sub-pixel 21, a first electrode 41b disposed in the second sub-pixel 22, and a first electrode 41c disposed in the third sub-pixel 23, and the reflective electrodes 42a, 42b, and 42c may include a first reflective electrode 42a disposed in the first sub-pixel 21, a second reflective electrode 42b disposed in the second sub-pixel 22, and a third reflective electrode 42c disposed in the third sub-pixel 23.

[0062] A dam portion BK (described later) can be provided on each of the first electrodes 41a, 41b, and 41c. The dam portion BK can be provided to cover the edges of the first electrodes 41a, 41b, and 41c respectively provided in the first to third sub-pixels 21, 22, and 23, to distinguish the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23. The dam portion BK can be provided in the non-light-emitting areas NEA1, NEA2, and NEA3.

[0063] The display device 1 can further improve light extraction efficiency by including reflective electrodes 42a, 42b and 42c with different surface heights in each sub-pixel 21, 22 and 23, utilizing the microcavity characteristics.

[0064] The microcavity characteristics are such that when the distance between the reflecting electrodes 42a, 42b, and 42c and the second electrode 6 is an integer multiple of half the wavelength (λ / 2) of the light emitted from the sub-pixels 21, 22, and 23, constructive interference occurs to amplify the light. Furthermore, as the reflecting electrodes 42a, 42b, and 42c repeatedly reflect and re-reflect with the second electrode 6, the degree of light amplification continuously increases, thereby improving the external light extraction efficiency. The second electrode 6 can be used as a negative electrode (or cathode).

[0065] The common light-emitting layer 5 can be configured to emit white light. For example, the common light-emitting layer 5 can be configured to emit white light by having a two-layer structure including a blue light-emitting layer, a yellow-green light-emitting layer and a charge-generating layer or a three-layer structure including a blue light-emitting layer, a green light-emitting layer, a red light-emitting layer and a charge-generating layer, but it is not necessarily limited to this, and can be formed by multiple layers of more than three layers, as long as it can emit white light.

[0066] The common light-emitting layer 5 can be formed as a common layer spanning the first to third sub-pixels 21, 22 and 23.

[0067] The second electrode 6 can be disposed on the upper surface of the common light-emitting layer 5, which is opposite to the lower surface of the common light-emitting layer 5 that is in contact with the first electrodes 41a, 41b and 41c, and the second electrode 6 is configured to span the common layer across the first to third sub-pixels 21, 22 and 23.

[0068] In the case of a top-emitting type, the second electrode 6 can be set as a cathode, but in the case of a bottom-emitting type, the second electrode 6 can be set as an anode including a reflective material. In the case of a top-emitting type, the second electrode 6 can be formed as a semi-transparent electrode to improve light extraction efficiency by utilizing the microcavity characteristics. Since the display device 1 utilizes the microcavity characteristics to improve light extraction efficiency in the top-emitting type, an example in which the second electrode 6 is formed as a transparent electrode will be described.

[0069] A color filter layer 9 is disposed in each of the first to third sub-pixels 21, 22, and 23 to block a specific color of light emitted from the light-emitting layer 5 of each sub-pixel 21, 22, or 23. A first color filter 91 disposed in the first sub-pixel 21 can be configured to block light of colors other than red (R) light. In this case, the first color filter 91 can be configured as a red color filter. A second color filter 92 disposed in the second sub-pixel 22 can block light of colors other than green (G) light. In this case, the second color filter 92 can be provided as a green color filter. A third color filter 93 disposed in the third sub-pixel 23 can block light of colors other than blue (B) light. In this case, the third color filter 93 can be configured as a blue color filter. However, the embodiments described in this specification are not limited thereto.

[0070] The first to third color filters 91, 92 and 93, respectively set in the first to third sub-pixels 21, 22 and 23, can be set with the same size as the corresponding sub-pixels, or by reducing or expanding them relative to each sub-pixel at a predetermined ratio.

[0071] Hereinafter, the stacked structure of a display device 1 according to one embodiment will be described in detail.

[0072] According to one embodiment, the display device 1 includes a substrate 2, an insulating layer 3, first electrodes 41a, 41b and 41c, a dam BK, a common light-emitting layer 5, a second electrode 6, a cover layer 7, an encapsulation layer 8 and a color filter layer 9.

[0073] The substrate 2 can be a plastic film, a glass substrate, or a semiconductor substrate (e.g., silicon).

[0074] The substrate 2 can be formed of a transparent or opaque material. A first sub-pixel 21, a second sub-pixel 22, and a third sub-pixel 23 are disposed on the substrate 2. The first sub-pixel 21 can be configured to emit red (R) light, the second sub-pixel 22 can be configured to emit blue (B) light, and the third sub-pixel 23 can be configured to emit green (G) light.

[0075] According to one embodiment, the display device 1 is configured as a so-called top-emitting type that emits light upwards, so transparent and opaque materials can be used as the materials for the substrate 2. Color filters 91, 92, and 93 can be respectively disposed above the first to third sub-pixels 21, 22, and 23 from which they emit light, so as to transmit light of the aforementioned colors.

[0076] An insulating layer 3 is formed on the substrate 2. The insulating layer 3 may include an inorganic insulating material. The insulating layer 3 may include a first insulating layer 3a, a second insulating layer 3b on the first insulating layer 3a, and a third insulating layer 3c on the second insulating layer 3b.

[0077] The insulating layer 3 includes circuit elements for each sub-pixel 21, 22, and 23, including at least one thin-film transistor TR, various signal lines, and capacitors. The thin-film transistor TR may be disposed within the first insulating layer 3a. The signal lines may include gating lines, data lines, power lines, and reference voltage lines, and the thin-film transistor TR may include switching transistors, driving transistors, and sensing transistors. Each sub-pixel 21, 22, and 23 is defined by a cross structure of gating lines and data lines. The insulating layer 3 may surround the thin-film transistor TR.

[0078] The switching transistor switches according to the gating signal provided to the gating line, so as to supply the data voltage from the data line to the driving transistor.

[0079] The driving transistor switches in response to the data voltage supplied from the switching transistor to generate a data current from the power supplied from the power line and supplies the data current to the first electrodes 41a, 41b and 41c.

[0080] The sensing transistor is used to detect the threshold voltage deviation of the driving transistor that causes image quality degradation, and to supply current of the driving transistor to the reference line in response to a sensing control signal provided from the gate line or a separate sensing line.

[0081] A capacitor is used to maintain the data voltage supplied to the driving transistor for one frame and is connected to each of the gate and source terminals of the driving transistor.

[0082] A first thin-film transistor TR, a second thin-film transistor TR, and a third thin-film transistor TR are disposed within a first insulating layer 3a in each sub-pixel 21, 22, and 23. The first thin-film transistor TR can be connected to first electrodes 41a, 41b, and 41c disposed on the first sub-pixel 21 to apply a driving voltage for emitting light of a color corresponding to the first sub-pixel 21. The first thin-film transistor TR, the second thin-film transistor TR, and the third thin-film transistor TR can be disposed on the same thin-film transistor layer, but the embodiments described herein are not limited thereto.

[0083] The second thin-film transistor TR can be connected to the first electrodes 41a, 41b and 41c disposed on the second sub-pixel 22 to apply a driving voltage for emitting light of the color corresponding to the second sub-pixel 22.

[0084] The third thin-film transistor TR can be connected to the first electrodes 41a, 41b and 41c disposed on the third sub-pixel 23 to apply a driving voltage for emitting light of the color corresponding to the third sub-pixel 23.

[0085] When the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23 receive a gating signal (or scan signal) from a gating line (or scan line) using each transistor TR, a predetermined current is supplied to the light-emitting layer in response to the data voltage of the data line. Therefore, the light-emitting layer of each of the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23 can emit light at a predetermined brightness according to the predetermined current.

[0086] Insulating layer 3 protects transistor TR. Insulating layer 3 can be formed of inorganic insulating materials, but is not limited to this, and can also be formed of organic insulating materials. For example, insulating layer 3 can be made of materials such as silicon nitride (SiN). x ), silicon dioxide (SiO) x The insulating layer 3a, the second insulating layer 3b, and the third insulating layer 3c can be formed from inorganic materials such as silicon nitride (SiN). However, the embodiments described in this specification are not limited to these. x ), silicon dioxide (SiO) x It is formed from inorganic materials such as aluminum oxide (Al2O3), but the embodiments described in this specification are not limited to this.

[0087] Multiple conductive layers can also be disposed on the insulating layer 3. The conductive layers may include a first conductive layer on the first insulating layer 3a, a second conductive layer on the second insulating layer 3b, and a third conductive layer on the third insulating layer 3c. The first conductive layer may include a first reflective electrode 42a and a first connecting electrode 42a', the second conductive layer may include a second reflective electrode 42b and a second connecting electrode 42b', and the third conductive layer may include a third reflective electrode 42c and a third connecting electrode 42c'. The first reflective electrode 42a and the first connecting electrode 42a' may be disposed on the same layer and may contain the same material. The second reflective electrode 42b and the second connecting electrode 42b' may be disposed on the same layer and may contain the same material. The third reflective electrode 42c and the third connecting electrode 42c' may be disposed on the same layer and may contain the same material.

[0088] Each conductive layer may include a reflective material for reflecting light. For example, the reflective material may be a metal, but is not limited to this, as long as it is a material that can reflect light. For example, the reflective material may include aluminum (Al) or silver (Ag), but the embodiments described herein are not limited to this.

[0089] Reflective electrodes 42a, 42b, and 42c are disposed below the common light-emitting layer 5 for emitting light, so reflective electrode 42 can reflect light emitted upwards from the common light-emitting layer 5. Here, the term "upwards" can refer to the direction from which the user can perceive the light, for example, the side where the encapsulation layer 8 or color filter layer 9 is disposed. As a result, compared to the case where reflective electrodes 42a, 42b, and 42c are not present, the light efficiency of the first sub-pixel 21, the second sub-pixel 22, and the third sub-pixel 23 can be further improved. With the improved light efficiency, the user can perceive a high-brightness image (i.e., a clear image).

[0090] In the first light-emitting region EA1 and the first non-light-emitting region NEA1 of the first sub-pixel 21, the first reflective electrode 42a can be disposed on the upper surface and side surface of the first insulating layer 3a and on the substrate 2 exposed by the first insulating layer 3a. That is, as Figure 3As shown, the first insulating layer 3a is disposed in the non-light-emitting regions NEA1, NEA2, and NEA3. Therefore, in the first non-light-emitting region NEA1, the first reflective electrode 42a is disposed on the first insulating layer 3a. However, in the first light-emitting region EA, the first reflective electrode 42a can also be disposed between the first insulating layers 3a disposed in adjacent first non-light-emitting regions NEA1. In the second light-emitting region EA2 and the second non-light-emitting region NEA2 of the second sub-pixel 22, the second reflective electrode 42b can be disposed on the first insulating layer 3a. And in the third light-emitting region EA3 and the third non-light-emitting region NEA3 of the third sub-pixel 23, the third reflective electrode 42c can be disposed on the first insulating layer 3a. In each non-light-emitting region NEA1, NEA2, and NEA3, the first reflective electrode 42a and the first connecting electrode 42a' can be electrically connected to each transistor TR.

[0091] At the same time, such as Figure 3 , Figure 4 , Figure 5 and Figure 6 As shown, the first insulating layer 3a can be disposed in the non-light-emitting regions NEA1, NEA2, and NEA3. The first insulating layer 3a may not be disposed in the light-emitting regions EA1, EA2, and EA3, but the embodiments described herein are not limited to this, and the first insulating layer 3a may be disposed in some of the light-emitting regions EA1, EA2, and EA3. Hereinafter, for ease of explanation, the case where the first insulating layer 3a is not disposed in the light-emitting regions EA1, EA2, and EA3, and the substrate 2 is exposed in the light-emitting regions EA1, EA2, and EA3, will be described.

[0092] The first reflective electrode 42a and the first connecting electrode 42a' disposed on the first insulating layer 3a can be disposed on the upper surface and the side surface of the first insulating layer 3a, respectively. Furthermore, the first reflective electrode 42a and the first connecting electrode 42a' can be disposed in the light-emitting regions EA1, EA2, and EA3 where the first insulating layer 3a is not disposed, without overlapping with the first insulating layer 3a. For example, the first reflective electrode 42a and the first connecting electrode 42a' can be in contact with the upper surface of the substrate 2 in the light-emitting regions EA1, EA2, and EA3 where the first insulating layer 3a is not disposed. When a separation layer exists between the first insulating layer 3a and the substrate 2, the first reflective electrode 42a and the first connecting electrode 42a' can be in contact with the separation layer in the light-emitting regions EA1, EA2, and EA3 where the first insulating layer 3a is not disposed. In this specification, the side surface of the first insulating layer 3a can be... Figures 4 to 6 The inclined surface of the first insulating layer 3a is shown. The first reflective electrode 42a and the first connecting electrode 42a' can be in direct contact with the first insulating layer 3a.

[0093] Since the area of ​​the first connecting electrode 42a' is smaller than the area of ​​the first reflecting electrode 42a, therefore... Figure 5 and Figure 6 As shown, the first connecting electrode 42a' may be disposed only in a portion of the second light-emitting region EA2 and the third light-emitting region EA3. In some embodiments, the first connecting electrode 42a' may not overlap with the second light-emitting region EA2 and the third light-emitting region EA3.

[0094] The second insulating layer 3b may be disposed on the first reflective electrode 42a and the first connecting electrode 42a'. The second insulating layer 3b may have a step caused by the thickness of the first reflective electrode 42a and the first connecting electrode 42a'.

[0095] like Figure 3 As shown, in the area that does not contact the connection electrode (or reflective electrode) of each sub-pixel, the second insulating layer 3b can completely cover the first reflective electrode 42a.

[0096] On the other hand, such as Figure 4 As shown, in the region that does not contact the connecting electrode (or reflective electrode) of each sub-pixel (the region where the first reflective electrode 42a contacts the second connecting electrode 42b'), the second insulating layer 3b can expose the upper surface of the first reflective electrode 42a. The first insulating layer 3a can be disposed in the region where the first reflective electrode 42a contacts the second connecting electrode 42b', and due to the first insulating layer 3a, the first reflective electrode 42a overlapping the first insulating layer 3a can protrude upwards more than the first reflective electrode 42a not overlapping the first insulating layer 3a. That is, the second insulating layer 3b can be disposed on the remaining region of the first reflective electrode 42a except for the region where the first reflective electrode 42a directly contacts the second connecting electrode 42b'. The second connecting electrode 42b' and the third connecting electrode 42c' can overlap with the first insulating layer 3a.

[0097] like Figure 5 As shown, in the region that does not contact the connection electrode (or reflection electrode) of each sub-pixel (the region where the first connection electrode 42a' contacts the second reflection electrode 42b), the second insulating layer 3b can be exposed on the upper surface of the first connection electrode 42a'. The first insulating layer 3a can be disposed in the region where the first connection electrode 42a' contacts the second reflection electrode 42b, and due to the first insulating layer 3a, the first connection electrode 42a' overlapping with the first insulating layer 3a can protrude upward further than the first connection electrode 42a' not overlapping with the first insulating layer 3a. That is, the second insulating layer 3b can be disposed on the remaining region of the first connection electrode 42a' except for the region where the first connection electrode 42a' directly contacts the second reflection electrode 42b.

[0098] like Figure 6 As shown, in the region that does not contact the connection electrode (or reflection electrode) of each sub-pixel (the region where the first connection electrode 42a' and the second connection electrode 42b' contact), the second insulating layer 3b can be exposed on the upper surface of the first connection electrode 42a'. The first insulating layer 3a can be disposed in the region where the first connection electrode 42a' and the second connection electrode 42b' contact, and due to the first insulating layer 3a, the first connection electrode 42a' overlapping with the first insulating layer 3a can protrude upward further than the first connection electrode 42a' that does not overlap with the first insulating layer 3a. That is, the second insulating layer 3b can be disposed on the remaining region of the first connection electrode 42a' other than the region where the first connection electrode 42a' directly contacts the second connection electrode 42b'.

[0099] The second reflective electrode 42b or the second connecting electrode 42b' can be disposed on the second insulating layer 3b. The second reflective electrode 42b can be disposed in the second sub-pixel 22, and the second connecting electrode 42b' can be disposed in the first sub-pixel 21 and the third sub-pixel 23.

[0100] like Figure 4 As shown, the second connecting electrode 42b' can be disposed in the first non-light-emitting region NEA1 and can be in direct contact with the upper surface of the first reflecting electrode 42a exposed by the second insulating layer 3b. That is, no layer needs to be disposed between the first reflecting electrode 42a and the second connecting electrode 42b'.

[0101] like Figure 5 As shown, the second reflective electrode 42b can be disposed in the second non-light-emitting region NEA2 and the light-emitting region EA2, and can be in direct contact with the upper surface of the first connecting electrode 42a' exposed by the second insulating layer 3b. That is, no layer may be disposed between the second reflective electrode 42b and the first connecting electrode 42a'.

[0102] like Figure 6 As shown, the second connecting electrode 42b' can be disposed in the third non-light-emitting region NEA3, and can be in direct contact with the upper surface of the first connecting electrode 42a' exposed by the second insulating layer 3b. That is, no layer may be disposed between the second connecting electrode 42b' and the first connecting electrode 42a'.

[0103] The third insulating layer 3c can be disposed on the second reflective electrode 42b and the second connecting electrode 42b'.

[0104] The third reflective electrode 42c and the third connecting electrode 42c' can be disposed on the third insulating layer 3c.

[0105] like Figure 4As shown, in the first non-light-emitting region NEA1, the third connecting electrode 42c' can be electrically connected to the second connecting electrode 42b' through the third insulating layer 3c.

[0106] like Figure 5 As shown, in the second non-light-emitting region NEA2, the third connecting electrode 42c' can be electrically connected to the second reflecting electrode 42b through the third insulating layer 3c.

[0107] like Figure 6 As shown, in the third non-light-emitting region NEA3, the third reflective electrode 42c can be electrically connected to the second connecting electrode 42b' through the third insulating layer 3c.

[0108] The first electrode 41 can be disposed on the third reflective electrode 42c and the third connecting electrode 42c'.

[0109] Although not shown, trenches can also be formed in insulating layer 3. For example, trenches can be formed in non-light-emitting areas NEA1, NEA2, and NEA3. Trenches can be formed by passing through a portion of the third insulating layer 3c and the second insulating layer 3b, but the embodiments described herein are not limited thereto. In a display device 1 according to one embodiment, since trenches are formed between adjacent sub-pixels 21, 22, and 23, the lateral leakage current (LLC) caused by the common light-emitting layer 5 between adjacent sub-pixels 21, 22, and 23 can be improved.

[0110] like Figure 3 As shown, the first electrodes 41a, 41b, and 41c can be disposed in sub-pixels 21, 22, and 23, respectively. The first electrodes 41a, 41b, and 41c can be disposed on the same layer and can comprise the same material.

[0111] like Figure 3 As shown, in the light-emitting regions EA1, EA2, and EA3, the distances between the reflective electrodes 42a, 42b, and 42c and the second electrode 6 can be different. For example, the distance between the first reflective electrode 42a and the second electrode 6 can be the largest, followed by the distance between the second reflective electrode 42b and the second electrode 6, and finally the distance between the third reflective electrode 42c and the second electrode 6 can be the smallest.

[0112] The reason why the reflective electrodes 42a, 42b, and 42c are formed with various spacing distances (or resonant distances) from the second electrode 6 is that, through reflection and re-reflection between the reflective electrodes 42a, 42b, and 42c corresponding to these spacing distances and the second electrode 6, the extraction efficiency of different colors of light can be improved. Therefore, the light extraction efficiency of red light in the first sub-pixel 21 can be improved, the light extraction efficiency of green light in the second sub-pixel 22 can be improved, and the light extraction efficiency of blue light in the third sub-pixel 23 can be improved.

[0113] In the third light-emitting region EA3 of the third sub-pixel 23, the first electrode 41c can be directly disposed on the third reflective electrode 42c. In each non-light-emitting region NEA1 and NEA2 of the first sub-pixel 21 and the second sub-pixel 22, the first electrodes 41a and 41b can be directly disposed on the third connecting electrode 42c'.

[0114] Each of the first electrodes 41a, 41b, and 41c can be electrically connected to the thin-film transistor TR in each of the non-light-emitting regions NEA1, NEA2, and NEA3.

[0115] The first electrodes 41a, 41b, and 41c may comprise a material with high light transmittance. For example, the first electrodes 41a, 41b, and 41c may comprise ITO, IZO, or TiN, but are not limited thereto.

[0116] The dam portion BK can be disposed on the first electrodes 41a, 41b, and 41c. The dam portion BK can be made of materials such as silicon nitride (SiN). x ), silicon dioxide (SiO) x It can be formed from inorganic materials such as aluminum oxide (Al2O3), but the embodiments described in this specification are not limited to this. The embankment BK can be set on the non-luminescent areas NEA1, NEA2 and NEA3.

[0117] In the light-emitting regions EA1, EA2, and EA3, the embankment BK may expose the upper surfaces of the first electrodes 41a, 41b, and 41c to define the light-emitting regions EA1, EA2, and EA3. The embankment BK may contact the upper surfaces and side surfaces of the first electrodes 41a, 41b, and 41c. In the non-light-emitting regions NEA1, NEA2, and NEA3, the embankment BK may completely cover the upper surfaces of the first electrodes 41a, 41b, and 41c, and in the light-emitting regions EA1, EA2, and EA3, the embankment BK may expose the upper surfaces of the first electrodes 41a, 41b, and 41c.

[0118] A common light-emitting layer 5 is formed on the first electrodes 41a, 41b, 41c and the embankment BK. The common light-emitting layer 5 can contact the upper surfaces of the first electrodes 41a, 41b, 41c. The common light-emitting layer 5 can directly contact the upper surfaces of the first electrodes 41a, 41b, 41c, the upper and side surfaces of the embankment BK, and the upper surface of the insulating layer 3. The common light-emitting layer 5 can also be configured to extend into the trench.

[0119] An organic light-emitting diode (OLED) according to one embodiment may include a first electrode 41 or ANO, a second electrode 6 or CAT, and a common light-emitting layer 5 between the first electrode 41 and the second electrode 6.

[0120] A common light-emitting layer 5 can be configured to emit white (W) light. For this purpose, the common light-emitting layer 5 may include multiple stacked layers for emitting different colors of light. Specifically, the common light-emitting layer 5 may include a first stacked layer, a second stacked layer, and a charge-generating layer CGL disposed between the first and second stacked layers.

[0121] The second electrode 6 is formed on the common light-emitting layer 5. The second electrode 6 can be used as the cathode of the display device 1. Similar to the common light-emitting layer 5, the second electrode 6 is formed in each of the sub-pixels 21, 22 and 23 and between the sub-pixels 21, 22 and 23.

[0122] In a display device 1 according to one embodiment, the second electrode 6 can be formed as a semi-transparent electrode to achieve white light with light efficiency of the top-emitting type. Therefore, a microcavity effect can be obtained for each of the first to third sub-pixels 21, 22, and 23. The microcavity effect is achieved by repeatedly reflecting and re-reflecting light between the second electrode 6 and the reflecting electrodes 42a, 42b, and 42c, thereby improving light extraction efficiency.

[0123] Meanwhile, since the second electrode 6 is formed on the upper surface of the common light-emitting layer 5, the second electrode 6 can be formed along the contour of the common light-emitting layer 5. Since the common light-emitting layer 5 is formed along the contours of the first electrodes 41a, 41b, and 41c in the light-emitting region, the second electrode 6 can also be formed along the contours of the first electrodes 41a, 41b, and 41c. Furthermore, the capping layer 7 on the second electrode 6 can also be formed along the contour of the second electrode 6.

[0124] The capping layer 7 can be formed of an inorganic insulating material, but is not limited to this. The capping layer 7 can be disposed on the second electrode 6 to protect the organic light-emitting diode (OLED).

[0125] An encapsulation layer 8 is formed on the second electrode 6 to prevent or reduce the penetration of external moisture into the common light-emitting layer 5. The encapsulation layer 8 can be formed of inorganic insulating material, or it can be formed in a structure of alternating layers of inorganic and organic insulating materials, but it is not necessarily limited to this.

[0126] A color filter layer 9 is formed on the encapsulation layer 8. The color filter layer 9 may include, but is not limited to, a first red (R) color filter 91 disposed in the first sub-pixel 21, a second blue (B) color filter 92 disposed in the second sub-pixel 22, and a third green (G) color filter 93 disposed in the third sub-pixel 23.

[0127] Figure 7 yes Figure 3 A cross-sectional view of an organic light-emitting diode (OLED). Figure 8 yes Figure 3 A cross-sectional view of a modified organic light-emitting diode (OLED).

[0128] Reference Figures 1 to 8 The common light-emitting layer 5 may include a first stacked layer EL1, a second stacked layer EL2, and a first charge generation layer CGL1 disposed on the first electrodes 41a, 41b, and 41c.

[0129] The first stacked layer EL1 can be disposed on the first electrodes 41a, 41b and 41c, and is formed in a structure in which the hole injection layer HIL, the hole transport layer HTL, the blue (B) light-emitting layer EML1 and the electron transport layer ETL can be stacked sequentially.

[0130] The first stack EL1 can be set between the first sub-pixel 21 and the second sub-pixel 22, and between the second sub-pixel 22 and the third sub-pixel 23.

[0131] The first charge generation layer CGL1 is used to supply charge to the first stacked layer EL1 and the second stacked layer EL2. The first charge generation layer CGL1 may include an N-type charge generation layer for supplying electrons to the first stacked layer EL1 and a P-type charge generation layer for supplying holes to the second stacked layer EL2. The N-type charge generation layer may include a metallic material as a dopant.

[0132] The second stack EL2 can be disposed on the first stack EL1 and configured in a structure in which the hole transport layer HTL, the yellow-green (YG) emitting layer EML2, the electron transport layer ETL, and the electron injection layer EIL are stacked in sequence.

[0133] The second layer EL2 can be set between the first sub-pixel 21 and the second sub-pixel 22, and between the second sub-pixel 22 and the third sub-pixel 23.

[0134] Therefore, as Figure 3 As shown, the common light-emitting layer 5 can be configured as a common layer spanning the first to third sub-pixels 21, 22 and 23.

[0135] like Figures 3 to 8 As shown, the common light-emitting layer 5' of an organic light-emitting diode OLED according to one embodiment may include a first stacked layer EL1, a second stacked layer EL2, a third stacked layer EL3 disposed on the first electrodes 41a, 41b and 41c, a first charge-generating layer CGL1 between the first stacked layer EL1 and the second stacked layer EL2, and a second charge-generating layer CGL2 between the second stacked layer EL2 and the third stacked layer EL3.

[0136] The first stacked layer EL1 can be disposed on the first electrodes 41a, 41b and 41c, and is formed in a structure in which the hole injection layer HIL, the hole transport layer HTL, the blue (B) emitting layer EML1 and the electron transport layer ETL are stacked in sequence.

[0137] The first layer EL1 can be set between the first sub-pixel 21 and the second sub-pixel 22, and between the second sub-pixel 22 and the third sub-pixel 23, that is, set on the embankment BK.

[0138] The first charge generation layer CGL1 is used to supply charge to the first stacked layer EL1 and the second stacked layer EL2. The first charge generation layer CGL1 may include an N-type charge generation layer for supplying electrons to the first stacked layer EL1 and a P-type charge generation layer for supplying holes to the second stacked layer EL2. The N-type charge generation layer may include a metallic material as a dopant.

[0139] The second stack EL2 can be disposed on the first stack EL1 and configured in a structure in which the hole transport layer HTL, the green (G) emitting layer EML2 and the electron transport layer ETL are stacked sequentially.

[0140] The second layer EL2 can be set between the first sub-pixel 21 and the second sub-pixel 22, and between the second sub-pixel 22 and the third sub-pixel 23, that is, set on the embankment BK.

[0141] The second charge generation layer CGL2 is used to supply charge to the second stacked layer EL2 and the third stacked layer EL3. The second charge generation layer CGL2 may include an N-type charge generation layer for supplying electrons to the second stacked layer EL2 and a P-type charge generation layer for supplying holes to the third stacked layer EL3. The N-type charge generation layer may include a metallic material as a dopant.

[0142] The third stack EL3 can be disposed on the second stack EL2 and configured in a structure in which the hole transport layer HTL, the red (R) emitting layer EML3, the electron transport layer ETL and the electron injection layer EIL are stacked in sequence.

[0143] like Figures 1 to 8 As shown, charge generation layers CGL1 and CGL2 can be disposed between the first sub-pixel 21 and the second sub-pixel 22, and between the second sub-pixel 22 and the third sub-pixel 23. Meanwhile, in the display device 1 according to one embodiment, since the common light-emitting layer 5 is also disposed between sub-pixels 21, 22, and 23, when one sub-pixel emits light, lateral leakage current can flow through the charge generation layers CGL1 and CGL2 to adjacent sub-pixels 21, 22, and 23. However, trenches can be formed between sub-pixels 21, 22, and 23. The length of the common light-emitting layer 5 can be increased at the boundaries of sub-pixels 21, 22, and 23 by trenches, thereby increasing the current path. This prevents or reduces the generation of lateral leakage current. Furthermore, the common light-emitting layers 5 and 5' can be separated by trenches, thereby preventing or reducing lateral leakage current.

[0144] In a display device 1 according to one embodiment, the first connecting electrode 42a' (or the first reflecting electrode 42a) disposed on each sub-pixel 21, 22, 23 may be disposed on the first insulating layer 3a disposed in the non-light-emitting areas NEA1, NEA2, NEA3, and the second connecting electrode 42b' (or the second reflecting electrode 42b) may be directly disposed on the upper surface of the first connecting electrode 42a' (or the first reflecting electrode 42a), thereby reducing the number of contact holes and increasing the aperture ratio of each sub-pixel 21, 22, 23 (increasing the area of ​​the light-emitting areas EA1, EA2, EA3).

[0145] Furthermore, due to the increased aperture ratio of each of the sub-pixels 21, 22, and 23, the performance of the device can be improved, power consumption can be reduced, and the lifespan of the organic light-emitting diode OLED can be extended.

[0146] Hereinafter, a method for manufacturing a display device 1 according to one embodiment will be described.

[0147] Figures 9 to 14 This is a cross-sectional view of each process of a method for manufacturing a display device according to one embodiment. Figures 9 to 14 Based on the above Figure 4 The description is used to illustrate, and Figure 4 The operations described in [the document] can be applied in essentially the same way. Figure 5 and Figure 6 .

[0148] Reference Figure 4 and Figure 9 A first insulating layer 3a is formed on the substrate 2. A transistor TR can be disposed within the first insulating layer 3a. A via can be formed in the region overlapping with the transistor TR above it.

[0149] Reference Figure 4 and Figure 10 A first reflective electrode 42a is formed on the first insulating layer 3a and the substrate 2. The first reflective electrode 42a can be electrically connected to the transistor TR in the first non-light-emitting region NEA1. The first reflective electrode 42a can be in direct contact with the upper surface and side surface of the first insulating layer 3a, and can be in contact with the upper surface of the substrate 2. The first reflective electrode 42a can have a step formed by the first insulating layer 3a.

[0150] Reference Figure 4 and Figure 11 A second insulating layer 3b is formed on the first reflective electrode 42a. The second insulating layer 3b may be disposed in the first light-emitting region EA1. The second insulating layer 3b may also be disposed in the first non-light-emitting region NEA1, but the embodiments described herein are not limited thereto.

[0151] The second connecting electrode 42b' is formed on the first reflecting electrode 42a in the first non-light-emitting region NEA1. The second connecting electrode 42b' can be directly disposed on the upper surface of the first reflecting electrode 42a.

[0152] Reference Figure 4 and Figure 12 The third insulating layer 3c is formed on the second connecting electrode 42b' and the second insulating layer 3b.

[0153] Reference Figure 4 and Figure 13 This forms a third connecting electrode 42c' that passes through the third insulating layer 3c and is electrically connected to the second connecting electrode 42b'. The third connecting electrode 42c' may overlap with the first insulating layer 3a.

[0154] Reference Figure 4 and Figure 14 The first electrode 41a is formed on the third connecting electrode 42c'. The first electrode 41a can be directly disposed on the upper surface of the third connecting electrode 42c'.

[0155] Hereinafter, another embodiment of the display device 1_1 will be described.

[0156] Figure 15 This is a cross-sectional view of a pixel in another embodiment.

[0157] Reference Figure 15 The display device 1_1 in this embodiment and Figure 4 The difference in display device 1 is that transistor TR is located in the first light-emitting area EA1.

[0158] More specifically, the display device 1_1 may further include a fourth insulating layer 3d disposed between the substrate 2 and the first insulating layer 3a, and a transistor TR may be disposed in the fourth insulating layer 3d. The transistor TR may be disposed in the first light-emitting region EA1.

[0159] Due to the above Figure 4 The remaining parts are explained in detail, so their detailed descriptions are omitted.

[0160] The display device according to various embodiments of this specification can be described as follows.

[0161] According to various embodiments of this specification, a display device is provided, comprising: a substrate; defining a first sub-pixel on the substrate, the first sub-pixel including a first light-emitting region and a first non-light-emitting region surrounding the first light-emitting region; a first insulating layer on the first non-light-emitting region of the substrate; a first reflective electrode disposed on an upper surface and a side surface of the first insulating layer and disposed in the first light-emitting region and the first non-light-emitting region; a second insulating layer disposed on the first reflective electrode and exposing the exposed upper surface of the first reflective electrode disposed on the first insulating layer; and a second connecting electrode directly disposed on the first reflective electrode.

[0162] The display device may further include a third insulating layer on the second connecting electrode, wherein in the first non-light-emitting area, the third insulating layer may be exposed on the upper surface of the second connecting electrode.

[0163] In various embodiments of the display device according to this specification, the display device may further include a third connecting electrode connected to the exposed upper surface of the second connecting electrode.

[0164] The display device according to various embodiments of this specification may further define a second sub-pixel, the second sub-pixel including a second light-emitting region and a second non-light-emitting region surrounding the second light-emitting region, and further including a first connecting electrode disposed on the upper surface and side surface of the first insulating layer and disposed in the second light-emitting region and the second non-light-emitting region, wherein the first connecting electrode may be disposed on the same layer as the first reflective electrode.

[0165] In the display device according to various embodiments of this specification, the second insulating layer may expose the upper surface of the first connecting electrode in the second non-light-emitting area, and the display device may further include a second reflective electrode on the second insulating layer, wherein the second reflective electrode may be connected to the exposed upper surface of the first connecting electrode.

[0166] In the display device according to various embodiments of this specification, in the second non-light-emitting area, the third insulating layer may expose the upper surface of the second reflective electrode, and the third connecting electrode may be connected to the exposed upper surface of the second reflective electrode.

[0167] In the display device according to various embodiments of this specification, the second reflective electrode may be disposed on the same layer as the second connecting electrode.

[0168] The display device according to various embodiments of this specification may further define a third sub-pixel, which includes a third light-emitting region and a third non-light-emitting region surrounding the third light-emitting region, wherein, in the third non-light-emitting region, a first connecting electrode may be disposed on the upper surface and side surface of the first insulating layer.

[0169] In the display device according to various embodiments of this specification, in the third non-light-emitting region, the second insulating layer may expose the upper surface of the first connecting electrode, and in the third non-light-emitting region, the second connecting electrode may be connected to the exposed upper surface of the first connecting electrode.

[0170] In the display device according to various embodiments of this specification, in the third non-light-emitting area, the third insulating layer may expose the upper surface of the second connecting electrode, the third reflective electrode may be further disposed on the third insulating layer, and the third reflective electrode may be connected to the exposed upper surface of the second connecting electrode.

[0171] In the display device according to various embodiments of this specification, the third reflective electrode may be disposed on the same layer as the third connecting electrode.

[0172] In the display device according to various embodiments of this specification, the first sub-pixel may be a red sub-pixel, the second sub-pixel may be a green sub-pixel, and the third sub-pixel may be a blue sub-pixel.

[0173] The display device according to various embodiments of this specification may further include a transistor connected to a first reflective electrode, wherein the transistor may overlap with a first insulating layer.

[0174] The display device according to various embodiments of this specification may further include a transistor connected to a first reflective electrode, and a fourth insulating layer between a substrate and a first insulating layer, wherein the transistor may be disposed within the fourth insulating layer.

[0175] In the display device according to various embodiments of this specification, the second connecting electrode may overlap with the first insulating layer.

[0176] According to the implementation method, the first connecting electrode (or the first reflecting electrode) disposed in each sub-pixel can be disposed on the first insulating layer disposed in the non-light-emitting area, and the second connecting electrode can be directly disposed on the upper surface of the first connecting electrode (or the first reflecting electrode), thereby reducing the number of contact holes and increasing the aperture ratio of each sub-pixel.

[0177] According to the implementation method, the aperture ratio of each sub-pixel can be increased, thereby reducing power consumption and improving device performance.

[0178] According to the implementation method, a low-power display device can be provided.

[0179] However, the effects that can be obtained from this specification are not limited to those described above, and those skilled in the art to which this specification pertains will be able to clearly understand from the following description other effects not mentioned.

[0180] The embodiments have been described above with reference to the accompanying drawings. However, those skilled in the art will understand that the above-described technical structure can be implemented in other specific ways without altering its technical concept or essential characteristics. Therefore, it should be understood that the above-described embodiments are exemplary in all respects and not restrictive. Furthermore, the scope of the embodiments is determined by the appended claims rather than the detailed description. Moreover, the meaning and scope of the claims, as well as all variations or modifications derived from their equivalents, should be interpreted as being included within the scope of the embodiments.

[0181] Cross-references to related applications

[0182] This application claims priority to Korean Patent Application No. 10-2025-0037058, filed on March 24, 2025, the entire contents of which are incorporated herein by reference for all purposes.

Claims

1. A display device, the display device comprising: substrate; A first sub-pixel, the first sub-pixel being defined in the substrate, and the first sub-pixel including a first light-emitting region and a first non-light-emitting region surrounding the first light-emitting region; A first insulating layer is provided on the first non-light-emitting area of ​​the substrate; The first reflective electrode is disposed on the upper surface and side surface of the first insulating layer, and is disposed in the first light-emitting region and the first non-light-emitting region; A second insulating layer is disposed on the first reflective electrode and exposes the upper surface of the first reflective electrode disposed on the first insulating layer. as well as The second connecting electrode is directly disposed on the exposed upper surface of the first reflective electrode.

2. The display device according to claim 1, further comprising a third insulating layer on the second connecting electrode, wherein, In the first non-light-emitting region, the third insulating layer exposes the upper surface of the second connecting electrode.

3. The display device according to claim 2, the display device further comprising a third connecting electrode, the third connecting electrode being connected to the exposed upper surface of the second connecting electrode.

4. The display device according to claim 3, further comprising: The second sub-pixel includes a second light-emitting region and a second non-light-emitting region surrounding the second light-emitting region; as well as The first connecting electrode is disposed on the upper surface and the side surface of the first insulating layer, and is also disposed in the second light-emitting region and the second non-light-emitting region. The first connecting electrode and the first reflecting electrode are disposed on the same layer.

5. The display device according to claim 4, wherein, The second insulating layer exposes the upper surface of the first connecting electrode in the second non-light-emitting region, and The display device further includes a second reflective electrode on the second insulating layer, wherein the second reflective electrode is connected to the exposed upper surface of the first connecting electrode.

6. The display device according to claim 5, wherein, In the second non-light-emitting region, the third insulating layer exposes the upper surface of the second reflective electrode, and the third connecting electrode is connected to the exposed upper surface of the second reflective electrode.

7. The display device according to claim 5, wherein, The second reflective electrode and the second connecting electrode are disposed on the same layer.

8. The display device according to claim 4, further comprising: The third sub-pixel includes a third light-emitting region and a third non-light-emitting region surrounding the third light-emitting region. In the third non-light-emitting region, the first connecting electrode is disposed on the upper surface and the side surface of the first insulating layer.

9. The display device according to claim 8, wherein, The second insulating layer exposes the upper surface of the first connecting electrode in the third non-light-emitting region, and in the third non-light-emitting region, the second connecting electrode is connected to the exposed upper surface of the first connecting electrode.

10. The display device according to claim 9, wherein, In the third non-light-emitting region, the third insulating layer exposes the upper surface of the second connecting electrode, and the display device further includes a third reflective electrode on the third insulating layer, wherein the third reflective electrode is connected to the exposed upper surface of the second connecting electrode.

11. The display device according to claim 10, wherein, The third reflective electrode and the third connecting electrode are disposed on the same layer.

12. The display device according to claim 8, wherein, The first sub-pixel is a red sub-pixel, the second sub-pixel is a green sub-pixel, and the third sub-pixel is a blue sub-pixel.

13. The display device according to claim 1, further comprising a transistor connected to the first reflective electrode, wherein, The transistor overlaps with the first insulating layer.

14. The display device according to claim 1, further comprising: A transistor, the transistor being connected to a first reflective electrode; as well as A fourth insulating layer, wherein the fourth insulating layer is located between the substrate and the first insulating layer. The transistor is disposed within the fourth insulating layer.

15. The display device according to claim 1, wherein, The second connecting electrode overlaps with the first insulating layer.

16. The display device according to claim 1, wherein, The first insulating layer is not disposed in the first light-emitting area.

17. The display device according to claim 1, wherein, The first reflective electrode is in direct contact with the first insulating layer.

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