Semiconductor processing apparatus

Abstract

The application belongs to the technical field of semiconductor processing, and particularly relates to a semiconductor processing device, which comprises a first process chamber, a uniform gas disc, a tray, a second process chamber, an isolation assembly and a bearing table. The isolation assembly is arranged between the first process chamber and the second process chamber to close the bottom wall of the first process chamber and close the top wall of the second process chamber, so that the first process chamber is separated from the second process chamber. The semiconductor processing device can effectively reduce the land occupation of the device itself by integrating the first process chamber and the second process chamber together and separating them through the isolation assembly, and can also make the transfer route in the batch wafer production process partially coincide, effectively shorten the material transfer process, and directly save the whole transfer time when the wafer in the first process chamber is directly sent into the second process chamber, thereby effectively reducing the time spent in wafer transfer, and being beneficial to accelerating the overall processing progress and operation efficiency.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, and more particularly to semiconductor processing equipment. Background Technology

[0002] In the semiconductor manufacturing industry, in order to match the special environmental parameters of hundreds of differentiated processes such as photolithography, etching, thin film deposition, rapid thermal processing, and cooling, the industry has long adopted a layout approach of setting up independent cavities. Different process cavities are built separately according to their own processing needs, temperature thresholds, and pressure conditions, so as to ensure the process stability of each step.

[0003] In existing technologies, the process chambers with different functions in semiconductor processing production lines are arranged completely independently in different areas of the production line. Each type of process chamber is equipped with a dedicated transfer tool, ranging from overhead unmanned transport vehicles and dedicated wafer box storage equipment to composite transfer robots adapted to different cleanliness levels. These tools are responsible for accurately transporting wafer carriers to the corresponding process chambers. Some special processes that are highly sensitive to the environment are even equipped with dedicated loading and unloading robotic arms and buffer mechanisms for each process chamber. The entire system relies on multiple independent scheduling logics to complete the material flow throughout the entire process, thereby meeting the differentiated transfer needs of different processes.

[0004] The numerous independently set process chambers and supporting transfer equipment not only significantly expand the footprint of the entire production line and keep the cost of equipment and infrastructure high for a long time, but also generate a lot of non-operational waiting time in the multi-stage material transfer process. Problems such as path congestion and connection delays in cross-chamber scheduling occur frequently, directly lengthening the overall processing cycle of a single batch of wafers and seriously slowing down the processing progress and overall operating efficiency of the production line. Summary of the Invention

[0005] The purpose of this invention is to provide a semiconductor processing equipment that solves the problems of existing semiconductor processing equipment where multiple process cavities are set up separately, resulting in a large overall footprint, high manufacturing costs, and long and time-consuming material transfer processes, which slows down the overall processing progress and operating efficiency.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] This invention provides a semiconductor processing apparatus, comprising:

[0008] First process chamber;

[0009] A gas distribution plate is disposed in the first process chamber;

[0010] A tray is disposed within the first process chamber to receive wafers;

[0011] Second process chamber;

[0012] An isolation assembly is disposed between the first process chamber and the second process chamber to seal the bottom wall of the first process chamber and the top wall of the second process chamber, thereby separating the first process chamber from the second process chamber.

[0013] A support stage is disposed within the second process chamber to receive wafers.

[0014] Optionally, the isolation component includes:

[0015] An isolation plate, wherein the upper surface of the isolation plate abuts against the bottom wall of the first process chamber to seal the bottom wall of the first process chamber, and the lower surface of the isolation plate abuts against the top wall of the second process chamber to seal the top wall of the second process chamber;

[0016] A first sealing element is disposed on the upper side of the isolation plate to seal the gap between the isolation plate and the first process chamber;

[0017] A second sealing element is disposed on the lower side of the isolation plate to seal the gap between the isolation plate and the second process chamber.

[0018] Optionally, the partition plate has a vacuum interlayer inside.

[0019] Optionally, the vacuum interlayer is provided with an air intake structure to maintain the vacuum level within the vacuum interlayer.

[0020] Optionally, the side wall of the first process chamber is provided with an exhaust hole, the isolation component has a vent hole communicating with the exhaust hole, and the side wall of the second process chamber has an exhaust channel communicating with the vent hole. The exhaust hole, the vent hole, and the exhaust channel form an exhaust flow channel that can discharge the gas in the first process chamber.

[0021] Optionally, multiple exhaust channels are evenly distributed around the circumference of the first process chamber.

[0022] Optionally, a temperature compensation mechanism is provided at the exhaust channel to maintain the temperature inside the exhaust channel.

[0023] Optionally, a lifting ring is provided on the outer side of the tray, the lifting ring is provided with a connecting arm, one end of the connecting arm away from the lifting ring extends out of the first process chamber and is provided with a guide post, a lifting drive component is provided on the outer wall of the first process chamber, and the lifting end of the lifting drive component is coaxially arranged and fixedly connected to the guide post.

[0024] Optionally, the inner top wall of the first process chamber is funnel-shaped and surrounds the gas equalization plate to form a gas equalization space.

[0025] Optionally, the gas equalization disk has a plurality of gas equalization holes, the diameter and distribution density of which both increase radially along the gas equalization disk.

[0026] The beneficial effects of this invention are:

[0027] In operation, this semiconductor processing equipment places wafers to be processed onto trays in the first process chamber and support platforms in the second process chamber. Process gas is injected into the first process chamber, and a gas distribution plate evenly disperses the gas, ensuring sufficient and uniform contact between the gas and the wafers. Wafers in the second process chamber undergo heat treatment or cooling processes. The first and second process chambers are separated by an isolation component, preventing interference between them. After each process is completed, the wafers are transferred together or sequentially using a transfer device. Therefore, by integrating the first and second process chambers and separating them with an isolation component—which serves as both the bottom and top walls of the first and second chambers—this semiconductor processing equipment effectively reduces the equipment's footprint and manufacturing costs. It also allows for partial overlap of transfer routes in mass wafer production, effectively shortening the material transfer process. In particular, when wafers from the first process chamber are directly fed into the second process chamber, the entire transfer time is saved, significantly reducing wafer transfer time and accelerating overall processing speed and operational efficiency. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the structure of the semiconductor processing equipment in an embodiment of the present invention;

[0029] Figure 2 This is a cross-sectional view of the semiconductor processing equipment in an embodiment of the present invention;

[0030] Figure 3 This is a schematic diagram of the structure of the gas distribution plate of the semiconductor processing equipment in an embodiment of the present invention;

[0031] Figure 4 This is a schematic diagram of the structure of the isolation plate of the semiconductor processing equipment in an embodiment of the present invention;

[0032] Figure 5 This is a cross-sectional view of the isolation plate of the semiconductor processing equipment in an embodiment of the present invention;

[0033] Figure 6 This is a cross-sectional view of the exhaust channel of the semiconductor processing equipment in an embodiment of the present invention.

[0034] In the picture:

[0035] 1. First process chamber; 11. Exhaust port; 2. Gas distribution plate; 21. Gas distribution space; 22. Gas distribution hole; 3. Tray; 31. Lifting ring; 32. Connecting arm; 33. Guide column; 34. Lifting drive component; 4. Second process chamber; 41. Exhaust channel; 5. Isolation assembly; 51. Isolation plate; 511. Vacuum interlayer; 52. First seal; 53. Second seal; 54. Air guide hole; 6. Support platform; 7. Gas injection module; 8. Exhaust channel; 9. Temperature compensation mechanism. Detailed Implementation

[0036] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0037] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection or a detachable connection; a mechanical connection or an electrical connection; a direct connection or an indirect connection through an intermediate medium; or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0038] In the description of this invention, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0039] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0040] like Figures 1 to 6 As shown, the present invention provides a semiconductor processing apparatus.

[0041] The semiconductor processing equipment includes a first process chamber 1, a gas equalization tray 2, a tray 3, a second process chamber 4, an isolation assembly 5, and a support stage 6. The gas equalization tray 2 is disposed within the first process chamber 1; the tray 3 is disposed within the first process chamber 1 to receive wafers; the isolation assembly 5 is disposed between the first process chamber 1 and the second process chamber 4 to seal the bottom wall of the first process chamber 1 and the top wall of the second process chamber 4, thereby separating the first process chamber 1 and the second process chamber 4; the support stage 6 is disposed within the second process chamber 4 to receive wafers.

[0042] In use, this semiconductor processing equipment places wafers to be processed onto trays 3 in the first process chamber 1 and support platforms 6 in the second process chamber 4. Process gas is injected into the first process chamber 1, and a gas distribution plate 2 evenly disperses the process gas, ensuring sufficient and uniform contact between the process gas and the wafers. Wafers in the second process chamber 4 undergo heat treatment or cooling processes. The first and second process chambers 1 and 4 are separated by an isolation component 5, preventing interference between them. After the processes are completed, the wafers are transferred together or sequentially using a transfer device. Therefore, this semiconductor processing equipment integrates the first process chamber 1 and the second process chamber 4 together and separates them by an isolation component 5. The isolation component 5 not only serves as the bottom wall of the first process chamber 1 but also as the top wall of the second process chamber 4. This effectively reduces the equipment's footprint and manufacturing costs. It also allows the transfer routes in the mass wafer production process to partially overlap, effectively shortening the material transfer process. In particular, when the wafers in the first process chamber 1 are directly fed into the second process chamber 4, the entire transfer time can be saved, thereby effectively reducing the time spent on wafer transfer and accelerating the overall processing progress and operating efficiency.

[0043] Specifically, the first process chamber 1 and the second process chamber 4 are arranged in a stacked configuration. The top wall of the first process chamber 1 is equipped with a gas injection module 7 for injecting process gases into it. The bottom wall of the first process chamber 1 is sealed by an isolation component 5, thus forming a closed chamber within it. In this chamber, wafers can undergo resist removal and other processes. The isolation component 5 seals the top wall of the second process chamber 4, also forming a closed chamber within it. In this chamber, wafers can undergo heat treatment or cooling. The material loading and unloading ports of the first process chamber 1 and the second process chamber 4 can be located on the same side to further simplify the material transfer process.

[0044] Optionally, a lifting ring 31 is provided on the outer side of the tray 3, and a connecting arm 32 is provided on the lifting ring 31. The end of the connecting arm 32 away from the lifting ring 31 extends out of the first process chamber 1 and is provided with a guide post 33. A lifting drive component 34 is provided on the outer wall of the first process chamber 1, and the lifting end of the lifting drive component 34 is coaxially arranged with the guide post 33 and fixedly connected.

[0045] Specifically, a fixed seat is fixedly installed on the outer wall of the first process chamber 1. The lifting drive component 34 is a cylinder, with the cylinder body fixed on the fixed seat. The piston rod of the cylinder is coaxial with the guide column 33 and the two are fixedly connected, so that the piston rod can drive the guide column 33 to rise and fall synchronously when it extends and retracts. The guide column 33 can pull the connecting arm 32 to rise and fall synchronously, thereby driving the lifting ring 31 to rise and fall synchronously within the first process chamber 1. The lifting drive component 34 can also be implemented using a servo motor in conjunction with a transmission screw or other structures, which is not limited in this invention.

[0046] By setting the actuator end of the lifting drive 34 coaxially with the guide post 33, the lifting drive 34 only generates axial tension or thrust on the guide post 33 during operation, without generating lateral external force. The requirements for resisting wear, jamming and deformation caused by lateral external force are lower, which allows the machining accuracy of the guide post 33, such as straightness, roundness and surface roughness, to be appropriately reduced. Moreover, the limiting structure of the guide post 33 only needs to retain the axial structure, without having to consider the offset caused by radial movement. At the same time, it can also reduce the cumulative error formed after the guide post 33 is installed, ensuring that the lifting ring 31 remains horizontal during the lifting process.

[0047] Optionally, the inner top wall of the first process chamber 1 is funnel-shaped and encloses the gas equalization disk 2 to form a gas equalization space 21.

[0048] Specifically, the gas equalization disk 2 is embedded in the first process chamber 1, located directly above the tray 3. The top wall of the first process chamber 1 has an air hole in the middle to allow the process gas to enter. The inner top wall of the first process chamber 1 is funnel-shaped. The process gas can be evenly dispersed along the inner top wall when it enters the gas equalization space 21, thereby forming a stable flow field in the gas equalization space 21 so that the process gas can flow evenly to the gas equalization disk 2.

[0049] Optionally, the air distribution disk 2 has a plurality of air distribution holes 22, the diameter and distribution density of which both increase radially along the air distribution disk 2.

[0050] Specifically, the gas equalization disk 2 is disc-shaped, and multiple through holes are opened on its surface as gas equalization holes 22. The gas equalization holes 22 near the center of the gas equalization disk 2 have smaller diameters and lower density, while the gas equalization holes 22 near the edge of the gas equalization disk 2 have larger diameters and higher density. Because the center of the gas equalization disk 2 is closer to the gas holes of the first process cavity, the path of the process gas is shorter. In this way, the gas equalization disk 2 and the gas equalization space 21 cooperate to form secondary gas equalization, so that the process gas can pass through the gas equalization disk 2 evenly and make uniform and sufficient contact with the wafer on the tray 3, thereby improving the etching uniformity.

[0051] The isolation component 5 serves as the bottom wall of the first process chamber 1, and the tray 3 is located on the upper side of the isolation component 5. The isolation component 5 seals the interior of the first process chamber 1, which not only seals the chamber but also provides thermal insulation, preventing the temperatures of the two process chambers from affecting each other.

[0052] Optionally, the isolation assembly 5 includes an isolation plate 51, a first seal 52, and a second seal 53. The upper surface of the isolation plate 51 abuts against the bottom wall of the first process chamber 1 to seal the bottom wall of the first process chamber 1, and the lower surface of the isolation plate 51 abuts against the top wall of the second process chamber 4 to seal the top wall of the second process chamber 4; the first seal 52 is disposed on the upper side of the isolation plate 51 to seal the gap between the isolation plate 51 and the first process chamber 1; the second seal 53 is disposed on the lower side of the isolation plate 51 to seal the gap between the isolation plate 51 and the second process chamber 4.

[0053] Specifically, the shape of the isolation plate 51 is adapted to the shapes of the first process chamber 1 and the second process chamber 4, and all three have the same cross-sectional dimensions. The upper surface of the isolation plate 51 has an upper groove, and the first sealing element 52, a sealing ring, is embedded in the upper groove and abuts against the first process chamber 1 for sealing. Similarly, the lower surface of the isolation plate 51 has a lower groove, and the second sealing element 53, also a sealing ring, is embedded in the lower groove and abuts against the second process chamber 4 for sealing. The isolation plate 51 can be made of aluminum to ensure sufficient strength to support the first process chamber 1 and to ensure its surface is corrosion-resistant, allowing it to be adapted to various process chambers.

[0054] Optionally, the partition plate 51 has a vacuum interlayer 511 inside.

[0055] Specifically, the interior of the isolation plate 51 is hollow to form a vacuum interlayer 511, which is achieved using a vacuum brazing process. The vacuum interlayer 511 effectively blocks heat transfer, preventing temperature interference between the two process chambers. A supporting structure, such as a small amount of PEEK or ceramic particles, can also be installed within the vacuum interlayer 511 to improve its overall structural strength. A getter structure, such as a getter, can also be installed within the vacuum interlayer 511 to continuously absorb any gases that may be present, maintaining the vacuum level and ensuring stable thermal insulation performance.

[0056] Optionally, the side wall of the first process chamber 1 is provided with an exhaust hole 11, the isolation component 5 has a vent 54 communicating with the exhaust hole 11, and the side wall of the second process chamber 4 has an exhaust channel 41 communicating with the vent 54. The exhaust hole 11, the vent 54 and the exhaust channel 41 form an exhaust flow channel 8 that can discharge the gas in the first process chamber 1.

[0057] Specifically, an exhaust hole 11 is opened on the side wall of the first process chamber 1 near the bottom. The exhaust hole 11 extends into the side wall to the position corresponding to the partition plate 51 and then passes downward. A guide hole 54 is opened on the edge of the partition plate 51. The exhaust hole 11 and the guide hole 54 are sealed together. An exhaust channel 41 is opened through the side wall of the second process chamber 4. The exhaust channel 41 is sealed and connected to the guide hole 54, thereby forming an exhaust flow channel 8, so that the gas in the first process chamber 1 can be smoothly discharged along the exhaust flow channel 8.

[0058] To ensure the uniformity and stability of gas distribution, multiple exhaust channels 8 are evenly distributed around the circumference of the first process chamber 1. In this embodiment, four exhaust channels 8 are distributed at equal angular intervals.

[0059] Optionally, to prevent condensation of the gas in the exhaust channel 8 due to cold, a temperature compensation mechanism 9 is provided at the exhaust channel 8 to maintain the temperature within the exhaust channel 8. The temperature compensation mechanism 9 includes a heating rod and a thermocouple. The thermocouple can detect the temperature in real time. When a low temperature is detected, the heating rod can be activated to rapidly raise the temperature, preventing gas molecules generated during the degumming process from condensing into polymers and accumulating in the pipe, thus ensuring smooth gas discharge. Simultaneously, the temperature compensation mechanism 9 can also appropriately heat the process chamber to maintain its temperature, thereby shortening the pre-process preparation time. The specific configuration and operation of the temperature compensation mechanism 9 can be selected according to actual process requirements, and this invention does not limit this.

[0060] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. Semiconductor processing equipment, characterized in that, include: First process chamber (1); A gas distribution plate (2) is disposed in the first process chamber (1); A tray (3) is disposed in the first process chamber (1) for receiving wafers; Second process chamber (4); An isolation component (5) is disposed between the first process chamber (1) and the second process chamber (4) to seal the bottom wall of the first process chamber (1) and the top wall of the second process chamber (4) to separate the first process chamber (1) from the second process chamber (4). A support platform (6) is disposed in the second process chamber (4) for receiving wafers.

2. The semiconductor processing equipment according to claim 1, characterized in that, The isolation component (5) includes: The upper surface of the isolation plate (51) abuts against the bottom wall of the first process chamber (1) to seal the bottom wall of the first process chamber (1), and the lower surface of the isolation plate (51) abuts against the top wall of the second process chamber (4) to seal the top wall of the second process chamber (4). A first sealing element (52) is disposed on the upper side of the isolation plate (51) to seal the gap between the isolation plate (51) and the first process chamber (1); A second sealing element (53) is disposed on the lower side of the isolation plate (51) to seal the gap between the isolation plate (51) and the second process chamber (4).

3. The semiconductor processing equipment according to claim 2, characterized in that, The partition plate (51) has a vacuum interlayer (511) inside.

4. The semiconductor processing equipment according to claim 3, characterized in that, The vacuum interlayer (511) is provided with an air intake structure to maintain the vacuum level within the vacuum interlayer (511).

5. The semiconductor processing equipment according to claim 1, characterized in that, The first process chamber (1) has an exhaust hole (11) on its side wall, and the isolation component (5) has a vent hole (54) communicating with the exhaust hole (11). The second process chamber (4) has an exhaust channel (41) communicating with the vent hole (54) on its side wall. The exhaust hole (11), the vent hole (54) and the exhaust channel (41) form an exhaust flow channel (8) that can discharge the gas in the first process chamber (1).

6. The semiconductor processing equipment according to claim 5, characterized in that, The exhaust channels (8) are evenly distributed around the first process chamber (1) in multiple directions.

7. The semiconductor processing equipment according to claim 5, characterized in that, A temperature compensation mechanism (9) is provided at the exhaust channel (8) to maintain the temperature inside the exhaust channel (8).

8. The semiconductor processing equipment according to claim 1, characterized in that, A lifting ring (31) is provided on the outer side of the tray (3). The lifting ring (31) is provided with a connecting arm (32). One end of the connecting arm (32) away from the lifting ring (31) extends out of the first process chamber (1) and is provided with a guide post (33). A lifting drive (34) is provided on the outer wall of the first process chamber (1). The lifting end of the lifting drive (34) is coaxially arranged with the guide post (33) and fixedly connected.

9. The semiconductor processing equipment according to any one of claims 1 to 8, characterized in that, The inner top wall of the first process chamber (1) is funnel-shaped and surrounds the gas equalization plate (2) to form a gas equalization space (21).

10. The semiconductor processing equipment according to any one of claims 1 to 8, characterized in that, The gas equalization disk (2) has a plurality of gas equalization holes (22), and the diameter and distribution density of the plurality of gas equalization holes (22) increase radially along the gas equalization disk (2).

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