Method for manufacturing a glass core substrate and glass core substrate

Abstract

The application relates to a glass core substrate manufacturing method, a glass core substrate manufactured by the method, and a single-sided electroplating method for processing, so that copper material has upward expansion space in the hole when the temperature rises, and the quality of the product is ensured. The method comprises the following steps: S1: providing a glass substrate; S2: sputtering a seed layer; S3: glass slide bonding; S4: electroplating a conductive layer; S5: surface treatment; S6: glass slide debonding; and S7: metal etching.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging technology, and in particular to a method for manufacturing a glass core substrate and the glass core substrate thereof. Background Technology

[0002] As advanced packaging technologies in fields such as smart manufacturing place increasingly higher demands on substrates with large size, high wiring density, and low warpage, glass core substrates, with their superior performance in terms of high flatness, low coefficient of thermal expansion, and high modulus, have become a powerful solution to address these trends.

[0003] However, due to the relatively poor rigidity of glass substrates, individual glass substrates are prone to deformation during use, leading to easy breakage and high operating costs. Furthermore, existing glass core substrates are primarily processed using double-sided copper plating. Figure 4 As shown, the copper layer thickness on the upper and lower surfaces of the glass core substrate can reach 10-20um. Copper expands when heated during use, which can cause the holes to crack and pose a risk of leakage. Summary of the Invention

[0004] To overcome the above deficiencies, the present invention provides a method for manufacturing a glass core substrate. The glass core substrate manufactured by this method is processed by single-sided electroplating, which allows the copper material to expand upward in the holes when the temperature rises, thus ensuring the quality of the product.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A method for manufacturing a glass core substrate includes the following steps:

[0007] S1: Provide a glass substrate: Open TGV holes in the glass substrate;

[0008] S2: Sputtering seed layer: A metal seed layer is sputtered onto the upper surface of the control deformation film;

[0009] S3: Glass slide bonding: The glass substrate, the deformation control film and the glass slide are bonded in sequence;

[0010] S4: Electroplated conductive layer: Electroplating is performed on one side of the glass substrate to grow a conductive layer on the upper surface of the glass substrate and inside the TGV hole.

[0011] S5: Surface treatment: Grinding and polishing the upper surface of the glass substrate;

[0012] S6: Debonding the glass slide: Peeling the deformation control film from the glass slide onto the glass substrate;

[0013] S7: Metal Etching: Etching the lower surface of the glass substrate to remove the metal seed layer and obtain a glass core substrate that meets the requirements.

[0014] The present invention has the following beneficial effects:

[0015] In this invention, the deformation film can support the glass substrate by controlling the deformation film, thereby maintaining the flatness of the sheet and facilitating processing. Moreover, this application uses a single-sided electroplating method. During the electroplating of the conductive layer, copper metal grows along the upper surface of the glass substrate and the metal seed layer until it fills the TGV holes. Finally, the metal seed layer is removed by metal etching. Since the lower surface of the glass substrate is not electroplated, the copper metal has a certain space to expand downward, reducing the possibility of expansion and cracking during use and ensuring product quality. Furthermore, since it is a single-sided electroplating method, it is more convenient for subsequent grinding processing.

[0016] Preferably, an electrical test is performed after step S7.

[0017] Preferably, the amount of metal seed layer removed in step S7 is 1µm to 20µm.

[0018] Preferably, the diameter of the TGV pore is 2um-200um.

[0019] Preferably, the conductive layer is a copper layer with a thickness of 0.5µm to 20µm.

[0020] Preferably, the amount of material removed by grinding and polishing in step S5 is 0.5µm to 30µm.

[0021] To achieve the above objectives, the present invention also provides a glass core substrate, which is manufactured using the above-described method.

[0022] The present invention has the following beneficial effects:

[0023] In this invention, the glass core substrate with this structure has no electroplating on its lower surface, which allows the copper metal a certain space to expand downwards, reducing the possibility of expansion and cracking during use and ensuring product quality. Attached Figure Description

[0024] Figure 1 This is a flowchart of a method for manufacturing a glass core substrate according to the present invention;

[0025] Figure 2 This is a layer structure diagram of a glass core substrate during processing according to the present invention;

[0026] Figure 3 This is a layer structure diagram of a glass core substrate according to the present invention;

[0027] Figure 4 This is a basic cross-sectional view of a double-sided electroplated glass core in the prior art;

[0028] In the figure: 1. Glass substrate, 2. Deformation control film, 3. Glass slide, 4. TGV hole, 5. Conductive layer, 6. Metal seed layer. Detailed Implementation

[0029] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0030] The present invention adopts the following technical solution:

[0031] A method for manufacturing a glass core substrate includes the following steps:

[0032] S1: Provide a glass substrate: TGV holes 4 are formed on the glass substrate 1;

[0033] S2: Sputtering seed layer: A metal seed layer 6 is sputtered on the upper surface of the control deformation film 2; the thickness of the metal seed layer 6 is 1um-20um;

[0034] S3: Glass slide bonding: Glass substrate 1, deformation control film 2 and glass slide 3 are bonded sequentially; Metal seed layer 6 is located between deformation control film 2 and glass slide 3, and materials such as Cu, Ti, Ta, TiN, and TaN are selected.

[0035] S4: Electroplating conductive layer: Electroplating is performed on one side of the glass substrate 1 to grow a conductive layer 5 on its upper surface and inside the TGV hole 4.

[0036] S5: Surface treatment: Grind and polish the upper surface of the glass substrate 1; polishing is used to improve the surface flatness of the glass substrate 1 and control the thickness of the conductive layer 5; in this step, since the metal seed layer 6 on the control deformation film 2 and the conductive layer 5 in the TGV hole 4 have grown and bonded together, the glass substrate 1 and the control deformation film 2 are more firmly bonded on the basis of bonding, which facilitates rotation during grinding and polishing, avoids deviation between the two, and facilitates processing.

[0037] S6: Debonding the glass slide: Peel the deformation control film 2 from the glass slide 3 from the glass substrate 1;

[0038] S7 Metal Etching: The lower surface of the glass substrate 1 is etched to remove the metal seed layer 6, resulting in a glass core substrate that meets the requirements. The removal amount of the metal seed layer 6 is 1µm-20µm. In this invention, the deformation film 2 can support the glass substrate 1 by controlling it, forming a certain supporting force on the glass substrate 1, thereby maintaining the flatness of the sheet and facilitating processing. Moreover, this application uses a single-sided electroplating method for processing. During the electroplating of the conductive layer, copper metal will grow along the upper surface of the glass substrate and the metal seed layer until it fills the TGV holes. Finally, the metal seed layer 6 is removed by metal etching. Since the lower surface of the glass substrate 1 is not electroplated, a certain space is left for the copper metal to expand downward, reducing the possibility of expansion and cracking during use, ensuring product quality. Furthermore, since it is a single-sided electroplating, it is more convenient for subsequent grinding processing.

[0039] In this embodiment, an electrical test is performed after step S7 to test the overall conductivity of the glass core substrate.

[0040] In this embodiment, the diameter of the TGV hole 4 is 2um-200um.

[0041] In this embodiment, the conductive layer 5 is a copper layer with a thickness of 0.5um-20um, and its thickness on the upper surface of the glass substrate 1 is 0.5um-20um.

[0042] In this embodiment, the conductive layer 5 located in the TGV hole 4 completely fills the hole.

[0043] In this embodiment, the amount of material removed by grinding and polishing in step S5 is 0.5um to 30um.

[0044] In this embodiment, the controlled deformation membrane 2 used is the membrane designed by patent number TWM665485U.

[0045] In this embodiment, the single-sided electroplating machine is: Shengmei - Advanced Packaging Series - Single-Wafer Electroplating Machine

[0046] https: / / www.acmrcsh.com.cn / product-det.html?ProductId=39.

[0047] Or Suzhou Zhicheng Semiconductor - Electroplating Equipment VMAX 3D.

[0048] https: / / www.zc-semi.com / 42 / 8.

[0049] In this embodiment, the etching machine used is UBM etch, and copper and titanium etching solution is used.

[0050] In this embodiment, the WBR-Apollo300 fully automated wafer temporary bonding system from Wushi Microelectronics (Suzhou) is used (https: / / www.wushi50.com.cn / 4614 / 30292 / 1685876).

[0051] To achieve the above objectives, the present invention also provides a glass core substrate, which is manufactured using the method described above. In this invention, the lower surface of the glass core substrate is not electroplated, thus allowing the copper conductive layer 5 sufficient space for downward expansion. This reduces the possibility of expansion and cracking during use, ensuring product quality.

[0052] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for manufacturing a glass core substrate, characterized in that, Includes the following steps: S1: Provide a glass substrate: Open TGV holes in the glass substrate; S2: Sputtering seed layer: A metal seed layer is sputtered onto the upper surface of the control deformation film; S3: Glass slide bonding: The glass substrate, the deformation control film and the glass slide are bonded in sequence; S4: Electroplated conductive layer: Electroplating is performed on one side of the glass substrate to grow a conductive layer on the upper surface of the glass substrate and inside the TGV hole. S5: Surface treatment: Grinding and polishing the upper surface of the glass substrate; S6: Debonding the glass slide: Peeling the deformation control film from the glass slide onto the glass substrate; S7: Metal Etching: Etching the lower surface of the glass substrate to remove the metal seed layer and obtain a glass core substrate that meets the requirements.

2. The method for manufacturing a glass core substrate according to claim 1, characterized in that: After step S7, an electrical test is performed.

3. The method for manufacturing a glass core substrate according to claim 1, characterized in that: The amount of metal seed layer removed in step S7 is 1µm to 20µm.

4. The method for manufacturing a glass core substrate according to claim 1, characterized in that: The diameter of the TGV aperture is 20um-200um.

5. The method for manufacturing a glass core substrate according to claim 1, characterized in that: The conductive layer is a copper layer with a thickness of 0.5µm to 20µm.

6. The method for manufacturing a glass core substrate according to claim 1, characterized in that: The amount of material removed by grinding and polishing in step S5 is 0.5µm to 30µm.

7. A glass core substrate, characterized in that, It is manufactured using any one of the manufacturing methods described in claims 1-6.

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