Interposer, package structure, and method of fabricating a package structure

Abstract

The application discloses an interposer, a packaging structure and a preparation method of the packaging structure. The interposer comprises an interconnection layer, the interconnection layer comprises a conductive layer and a bridge structure embedded in the conductive layer, the conductive layer has a first surface, and part of the bridge structure exceeds the first surface; and a first redistribution layer is formed on the first surface, and the top surface of the bridge structure exceeding the first surface and the top surface of the first redistribution layer are at the same height. In the application, the electrical connection between the substrate and the first redistribution layer can be achieved through the conductive layer, the top surface of the first redistribution layer and the top surface of the bridge structure are at the same height, thus, the chip can be connected to the first redistribution layer and the bridge structure at the same time, the chip can form stable electrical connection with the first redistribution layer and the bridge structure at the same time, and the required thickness of the first redistribution layer can be reduced, thereby reducing the manufacturing cost of the packaging structure.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to an interposer, a packaging structure, and a method for preparing the packaging structure. Background Technology

[0002] In existing semiconductor packaging structures, a redistribution layer needs to be formed on one side of the substrate to electrically connect the substrate and the chip. Furthermore, when two chips need to be interconnected, a bridge structure is also required on the substrate. When fabricating this packaging structure, it is difficult to ensure that the chip can be stably soldered to both the bridge structure and the redistribution layer simultaneously when mounting the chip on both. This can easily lead to problems such as cold solder joints, preventing the chip from forming a stable electrical connection with both the redistribution layer and the bridge structure at the same time. Summary of the Invention

[0003] This invention provides an interposer, a packaging structure, and a method for fabricating the packaging structure. Its purpose is to solve the problem in the prior art that when a chip is simultaneously mounted on a bridge structure and a redistribution layer, it is difficult to ensure that the chip can form a stable electrical connection with both the redistribution layer and the bridge structure.

[0004] To achieve the above objectives, the present invention provides an intermediary layer comprising:

[0005] An interconnect layer, the interconnect layer including a conductive layer and a bridge structure embedded in the conductive layer, the conductive layer having a first surface, and a portion of the bridge structure extending beyond the first surface; A first wiring layer is formed on the first surface, and the top surface of the portion of the bridge structure extending beyond the first surface is at the same height as the top surface of the first wiring layer.

[0006] As an improvement of the present invention, the conductive layer includes a carrier and a plurality of conductive pillars. Each conductive pillar includes a top surface, a bottom surface and an outer peripheral surface. The carrier wraps around the outer peripheral surfaces of the plurality of conductive pillars. The top surfaces of the plurality of conductive pillars constitute at least a portion of the first surface. The conductive direction of the conductive pillars is arranged along the thickness direction of the conductive layer.

[0007] As an improvement of the present invention, the carrier includes at least one encapsulation body, the encapsulation body is provided with a plurality of first receiving holes, and a plurality of conductive pillars are respectively embedded in the plurality of first receiving holes, the material of the encapsulation body being at least one of silicon, glass and resin.

[0008] As an improvement of the present invention, the carrier further includes a molding compound that encapsulates at least one of the encapsulated bodies, the molding compound being made of resin.

[0009] As an improvement of the present invention, the interconnect layer further includes a substrate layer, the conductive layer has a second surface opposite to the first surface, the substrate layer is disposed on the second surface, the substrate layer has a third surface connected to the second surface, a plurality of conductive pillars are formed on the third surface, and the bridge structure is connected to the third surface.

[0010] As an improvement of the present invention, the conductive layer has a second surface opposite to the first surface, the intermediary layer further includes a second redistribution layer formed on the second surface, the top surface of the conductive pillar is electrically connected to the first redistribution layer, and the bottom surface of the conductive pillar is electrically connected to the second redistribution layer.

[0011] As an improvement of the present invention, the ratio of the thickness of the first redistribution layer to the thickness of the conductive layer is 0.5 to 1, and the thickness of the bridge structure is not greater than the sum of the thicknesses of the conductive layer and the first redistribution layer.

[0012] The present invention also provides a packaging structure comprising: a substrate, a chipset disposed on one side of the substrate, and an interposer layer disposed between the substrate and the chipset, wherein the chipset comprises at least two chips, the interposer layer is any of the interposer layers described above, and at least two of the chips in the chipset are connected to a first redistribution layer and interconnected with each other through the bridge structure.

[0013] The present invention also provides a method for preparing an encapsulation structure, which includes the following steps: Provide substrate; An interconnect layer is formed on the substrate. The interconnect layer includes a conductive layer and a bridge structure embedded in the conductive layer. The conductive layer has a first surface, and a portion of the bridge structure extends beyond the first surface. The first surface is located on the side of the conductive layer away from the substrate. A first redistribution layer is formed on the first surface, the top surface of the bridge structure extending beyond the first surface and the top surface of the first redistribution layer are at the same height, and the conductive layer electrically connects the substrate and the first redistribution layer. At least two chips are connected to the first rewiring layer, and at least two of the chips are interconnected through the bridge structure.

[0014] As an improvement of the present invention, the conductive layer includes a carrier and a plurality of conductive pillars, each conductive pillar having an opposing top surface, bottom surface and outer peripheral surface, the carrier wrapping the outer peripheral surface of the plurality of conductive pillars, the top surface of the plurality of conductive pillars forming at least a portion of the first surface, and the conductive direction of the conductive pillars being arranged along the thickness direction of the conductive layer. The step of "forming an interconnect layer on the substrate" includes the following steps: A plurality of the conductive pillars are formed directly on the substrate, or a plurality of the conductive pillars are soldered to the substrate; The bridge structure is connected to the substrate; An encapsulation is formed to encapsulate the bridge structure and the plurality of conductive pillars, the carrier comprising the encapsulation.

[0015] As an improvement to the present invention, the step of "forming an interconnect layer on the substrate" includes the following steps: At least one package is provided, wherein a plurality of first receiving holes are provided within the package; the carrier includes at least one package. After embedding a plurality of the conductive pillars into a plurality of the first receiving holes, at least one of the encapsulated bodies is connected to the substrate; or after connecting at least one of the encapsulated bodies to the substrate, a plurality of the conductive pillars are embedded into a plurality of the first receiving holes. The bridge structure is connected to the substrate.

[0016] As an improvement to the present invention, the step of "forming an interconnect layer on the substrate" further includes the following steps: A molding compound is formed, the molding compound encapsulating the bridge structure and at least one of the encapsulated bodies, the carrier comprising the molding compound and at least one of the encapsulated bodies.

[0017] As an improvement of the present invention, the conductive layer has a second surface opposite to the first surface, and the interconnect layer further includes a substrate layer disposed on the second surface, the substrate layer having a third surface for connecting with the second surface, and the step of "forming an interconnect layer on the substrate" includes the following steps: Provide a matrix layer; A plurality of the conductive pillars are directly formed on the third surface of the substrate layer; The bridge structure is connected to the third surface; An encapsulation is formed on the third surface, the encapsulation encapsulating the bridge structure and the plurality of conductive pillars, and the carrier includes the encapsulation; The substrate layer is attached to the substrate.

[0018] As an improvement to the present invention, the step of "forming the inclusion body on the third surface" includes the following steps: A molding container is provided, and after the inner wall of the molding container is coated with a liquid isolation layer material, the liquid encapsulation material is filled into the molding container. The bridge structure and the plurality of conductive pillars are immersed in the encapsulation material, and the third surface of the substrate layer is in contact with the encapsulation material. The height of each of the plurality of conductive pillars is not less than the distance from the third surface to the isolation layer material. The end of the bridge structure away from the substrate layer is higher than the plurality of conductive pillars. Solidify the inclusion material and the isolation layer material; Remove the molded container and the insulating layer material to expose the top surfaces of the bridge structure and the plurality of conductive pillars to the outside of the package.

[0019] As an improvement of the present invention, the chip is provided with a plurality of bumps on the side facing the first redistribution layer, the tops of the plurality of bumps are at the same height, and at least two chips are connected to the first redistribution layer and the bridge structure through the plurality of bumps.

[0020] As an improvement to the present invention, the step of "forming a first redistribution layer on the first surface" includes the following steps: At least two independent rewiring regions are formed on the first surface, and the bridge structure separates the at least two rewiring regions.

[0021] As an improvement to the present invention, the step of "forming at least two independent redistribution regions on the first surface" includes the following steps: The material on which the first redistribution layer is formed on the first surface and the bridge structure; Remove the material from the first rewiring layer formed on the bridge structure so that the material of the first rewiring layer formed on the first surface can form the at least two independent rewiring regions.

[0022] As an improvement of the present invention, the bridge structure includes a bridge substrate embedded in the conductive layer and a conductive structure disposed in the bridge substrate. The conductive structure includes at least two protrusions that protrude from the side of the bridge substrate away from the substrate, and the at least two protrusions are respectively connected to at least two chips.

[0023] As an improvement to the present invention, the step of "forming a first redistribution layer on the first surface" includes the following steps: A metal layer is formed for fabricating the first redistribution layer, wherein the top end of the metal layer is higher than the protrusion and the bottom end is lower than the protrusion; The metal layer is ground along the height direction so that the top of the metal layer is flush with the top of the protrusion.

[0024] Beneficial effects: In the interposer, packaging structure, and packaging structure fabrication method provided by the present invention, the substrate and the first redistribution layer can be electrically connected through a conductive layer. The thickness of the first redistribution layer is equal to the thickness of the portion of the bridge structure extending beyond the first surface, so that the top surface of the first redistribution layer and the top surface of the bridge structure are at the same height. This facilitates the simultaneous connection of the chip to the first redistribution layer and the bridge structure, enabling the chip to form a stable electrical connection with both the first redistribution layer and the bridge structure. Furthermore, the required thickness of the first redistribution layer is reduced, thereby lowering the manufacturing cost of the packaging structure. Attached Figure Description

[0025] Figure 1 This is a schematic flowchart illustrating a method for fabricating a packaging structure according to an embodiment of the present invention. Figure 2-7 This is a schematic diagram of the steps in a method for preparing a packaging structure according to an embodiment of the present invention; Figure 8 This is a schematic diagram of a package structure provided in an embodiment of the present invention connected to a circuit board; Figure 9-12 A schematic diagram illustrating the steps of a method for preparing a packaging structure according to another embodiment of the present invention; Figure 13 for Figure 9-12 A schematic diagram of the packaging structure obtained in the embodiment shown; Figure 14-20 A schematic diagram illustrating the steps of a method for preparing a packaging structure according to another embodiment of the present invention; Figure 21-22 A schematic diagram illustrating the steps of a method for preparing a packaging structure according to another embodiment of the present invention; Figure 23 A schematic diagram of a bridge structure in a packaging structure provided in an embodiment of the present invention; Figure 24-25 This is a schematic diagram of some steps in the preparation method of the packaging structure provided in an embodiment of the present invention; Figure 26-27 This is a schematic diagram of some steps in the preparation method of the packaging structure provided in an embodiment of the present invention.

[0026] In the picture: 100. Packaging structure; 110. Substrate; 120. Chipset; 1201. Chip; 12011. Bump; 130. Interposer layer; 10. Interconnect layer; 11. Bridge structure; 111. Bridge substrate; 112. Conductive structure; 1121. Protrusion; 12. Conductive pillar; 13. Encapsulation; 13'. Encapsulation material; 131. First surface; 132. Second surface; 1331. First accommodating hole; 1332. Second accommodating hole; 14. Substrate layer; 141. Third surface; 15. Conductive layer; 151. Carrier; 16. Encapsulation; 20. First redistribution layer; 21. Redistribution area; 22. Metal layer; 30. Second wiring layer; 200. Molded containers; 300. Isolation layer material; 400. Circuit board. Detailed Implementation

[0027] The present invention will now be described in detail with reference to the embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any modifications to the mechanism, method, or function made by those skilled in the art based on these embodiments are included within the scope of protection of the present invention.

[0028] The terms used herein, such as "up," "down," "left," "right," "front," and "back," indicating spatial relative position, are for illustrative purposes to describe the relationship of one feature relative to another, as shown in the accompanying drawings. It is understood that, depending on the product's placement, these terms may be intended to include different orientations besides those shown in the figures, and should not be construed as limiting the claims. Furthermore, the descriptive term "horizontal" used herein is not entirely equivalent to being perpendicular to the direction of gravity, and allows for a certain angle of inclination.

[0029] like Figure 1-7 As shown, an embodiment of the present invention provides a method for fabricating a packaging structure 100, which includes the following steps: like Figure 2 As shown, a substrate 110 is provided.

[0030] like Figure 3-5 As shown, an interconnect layer 10 is formed on the substrate 110. Forming the interconnect layer 10 on the substrate 110 can be understood as fabricating the interconnect layer 10 on the substrate 110, or connecting the interconnect layer 10 to the substrate 110 after pre-forming. The interconnect layer 10 includes a conductive layer 15 and a bridge structure 11 embedded in the conductive layer 15.

[0031] The conductive layer 15 has a first surface 131 located on the side of the conductive layer 15 facing away from the substrate 110. A portion of the bridge structure 11 extends beyond the first surface 131, and the remainder of the bridge structure 11 is embedded within the conductive layer 15.

[0032] like Figure 6 As shown, a first redistribution layer 20 is formed on the first surface 131. The top surface of the bridge structure 11 extending beyond the first surface 131 is at the same height as the top surface of the first redistribution layer 20. The conductive layer 15 has a second surface 132 opposite to the first surface 131, and the second surface 132 is connected to the substrate 110. The conductive layer 15 electrically connects the substrate 110 and the first redistribution layer 20.

[0033] When molding and installing the bridge structure 11 and the first rewiring layer 20, positional and dimensional errors are inevitable. Therefore, the statement that "the top surface of the portion of the bridge structure 11 extending beyond the first surface 131 and the top surface of the first rewiring layer 20 are at the same height" should not be interpreted as the top surface of the portion of the bridge structure 11 extending beyond the first surface 131 and the top surface of the first rewiring layer 20 being absolutely coplanar. A certain height difference between the two should be allowed.

[0034] like Figure 7 As shown, at least two chips 1201 are connected to the first rewiring layer 20, and the at least two chips 1201 are interconnected through a bridge structure 11. The at least two chips 1201 are able to transmit signals to each other through the bridge structure 11.

[0035] In the packaging structure 100 fabricated by the packaging structure fabrication method provided in this embodiment, an interconnect layer 10 is provided on one side of the substrate 110, and a first redistribution layer 20 is formed on the side of the interconnect layer 10 away from the substrate 110. The substrate 110 and the first redistribution layer 20 can be electrically connected through a conductive layer 15. The thickness of the first redistribution layer 20 is equal to the thickness of the portion of the bridge structure 11 that extends beyond the first surface 131, so that the top surface of the first redistribution layer 20 and the top surface of the bridge structure 11 are at the same height. In this way, it is convenient for the chip 1201 to be connected to the first redistribution layer 20 and the bridge structure 11 at the same time. The chip 1201 can form a stable electrical connection with the first redistribution layer 20 and the bridge structure 11 at the same time. Furthermore, the required thickness of the first redistribution layer 20 is small, which reduces the manufacturing cost of the packaging structure 100.

[0036] It should be noted that the order in which the steps in the packaging structure fabrication method are described in this article does not strictly represent the execution order of the packaging structure fabrication method. In this article, height and thickness should be understood as dimensions in the same direction.

[0037] like Figure 8 As shown, after the packaging structure 100 is fabricated, the substrate 110 can be soldered onto the circuit board 400, and the circuit board 400 can be electrically connected to at least two chips 1201 through the substrate 110 and the interconnect layer 10.

[0038] In this embodiment, the height of the conductive post 12 is 30um to 80um, and the height of the bridge structure 11 is greater than the height of the conductive post 12.

[0039] In this embodiment, the conductive layer 15 includes a carrier 151 and a plurality of conductive pillars 12. Each conductive pillar 12 includes a top surface, a bottom surface, and an outer peripheral surface, with the top and bottom surfaces facing each other. The carrier 151 covers the outer peripheral surfaces of the conductive pillars 12. A bridge structure 11 is embedded in the carrier 151. The conductive pillars 12 serve a conductive function and can be made of copper- or gold-containing materials to achieve good conductivity. The conductive direction of the conductive pillars 12 is along the thickness direction of the conductive layer 15. The bridge structure 11 is located between the conductive pillars 12.

[0040] The top surfaces of the plurality of conductive pillars 12 form at least a portion of the first surface 131, meaning that the first redistribution layer 20 is formed at least on the top surfaces of the plurality of conductive pillars 12. The substrate 110 and the first redistribution layer 20 can be electrically connected through the plurality of conductive pillars 12. The bottom surfaces of the plurality of conductive pillars 12 form at least a portion of the second surface 132.

[0041] A plurality of conductive pillars 12 are electrically connected to the substrate 110 and the first redistribution layer 20, enabling the conductive layer 15 to conduct electricity. Based on the above, the carrier 151 can protect the plurality of conductive pillars 12 and fix the position of the plurality of conductive pillars 12, thereby maintaining the stability of the overall structure of the conductive layer 15.

[0042] In this embodiment, the step of "forming an interconnect layer 10 on the substrate 110" includes the following steps: A plurality of conductive pillars 12 are directly formed on the substrate 110. Or, as... Figure 3 As shown, a plurality of conductive pillars 12 are soldered to a substrate 110. When the plurality of conductive pillars 12 are directly formed on the substrate 110, the conductive pillars 12 can be grown from the substrate 110 by a gradient plating process. Before the plurality of conductive pillars 12 are soldered to the substrate 110, the conductive pillars 12 need to be pre-formed.

[0043] like Figure 4 As shown, the bridge structure 11 is connected to the substrate 110. The bridge structure 11 needs to be prefabricated.

[0044] like Figure 5 As shown, an encapsulation 13 is formed, which encapsulates the bridge structure 11 and several conductive pillars 12. The encapsulation 13 can support and protect the bridge structure 11 and the several conductive pillars 12, and the carrier 151 includes the encapsulation 13.

[0045] In the above steps, the interconnect layer 10 is directly formed on the substrate 110, which simplifies the manufacturing process of the package structure 100, reduces production costs, and ensures the reliability of the package structure 100.

[0046] In one embodiment of the present invention, the step of "forming an interconnect layer 10 on the substrate 110" includes the following steps: like Figure 9 As shown, a package 13 is provided, and a plurality of first receiving holes 1331 are formed on the package 13. The carrier 151 mentioned above includes the package 13.

[0047] like Figure 10 As shown, after embedding several conductive pillars 12 into several first receiving holes 1331, the package 13 is connected to the substrate 110. Alternatively, after connecting the package 13 to the substrate 110, several conductive pillars 12 are embedded into several first receiving holes 1331. By using the above steps, several conductive pillars 12 can be integrated onto the package 13. The several conductive pillars 12 need to be pre-fabricated.

[0048] like Figure 11 As shown, the bridge structure 11 is connected to the substrate 110. A second receiving hole 1332 can be formed on the package 13 by drilling a hole in the package 13. When the package 13 and the bridge structure 11 are connected to the substrate 110, the bridge structure 11 is located within the second receiving hole 1332.

[0049] When the inclusion body 13 is connected to the substrate 110, a plurality of conductive pillars 12 can be electrically connected to the substrate 110.

[0050] In the above steps, a number of conductive pillars 12 are integrated into the package 13 so that the conductive pillars 12 can be precisely arranged. The package 13 can effectively limit the position of the conductive pillars 12, ensure the positional accuracy of the conductive pillars 12, and the conductive pillars 12 can be easily connected to the substrate 110.

[0051] In one embodiment of the invention, the package 13 is made of silicon. The coefficient of thermal expansion of silicon is similar to that of the chip 1201. When the chip 1201 is mounted by high-temperature processes such as soldering, the stress caused by the mismatch of thermal expansion coefficients can be effectively reduced. The package 13 and the entire conductive layer 15 are less prone to warping, thus ensuring the stability of the package structure 100.

[0052] In one embodiment of the invention, the encapsulation 13 is made of glass. The coefficient of thermal expansion of glass is similar to that of the chip 1201. When mounting the chip 1201 using high-temperature processes such as soldering, it can effectively reduce the stress caused by the mismatch in thermal expansion coefficients. The encapsulation 13 and the entire conductive layer 15 are less prone to warping, ensuring the stability of the packaging structure 100. Furthermore, glass is inexpensive, has a low melting point, and is easy to process. Using glass for the encapsulation 13 reduces the manufacturing cost of the packaging structure 100.

[0053] In one embodiment of the present invention, the encapsulation 13 is made of resin material. The coefficient of thermal expansion of the resin material is similar to that of the conductive pillar 12, and the conductive layer 15 can prevent delamination between the encapsulation 13 and the conductive pillar 12 when subjected to high temperatures.

[0054] like Figure 12 As shown, the step "forming an interconnect layer 10 on substrate 110" further includes the following steps: A molding compound 16 is formed, which encapsulates the bridge structure 11 and at least one encapsulation 13. The carrier 151 includes at least one encapsulation 13 and the molding compound 16.

[0055] In the above steps, after several conductive posts 12 are respectively embedded into the first receiving holes 1331 on multiple packages 13, a plastic-sealed bridge structure 11 and a plastic-sealed body 16 of multiple packages 13 are formed, so that the positions of the bridge structure 11 and multiple packages 13 can be effectively fixed.

[0056] Figure 13 This is a schematic diagram of the packaging structure 100 fabricated using the manufacturing method of this embodiment.

[0057] In one embodiment of the present invention, the package 13 is provided as a single unit. The package 13 has a plurality of first receiving holes 1331 formed thereon, and a plurality of conductive posts 12 are embedded within the plurality of first receiving holes 1331. The package 13 being a single unit allows for easy connection to the substrate 110, reducing the manufacturing cost of the packaging structure 100.

[0058] In one embodiment of the present invention, multiple packages 13 are provided, and the method for preparing the encapsulation structure 100 further includes the following steps: A mother package is provided, and a plurality of first receiving holes 1331 are formed on the mother package; A plurality of conductive posts 12 are respectively embedded into a plurality of first receiving holes 1331; The parent package is cut to form multiple packages 13. Packages 13 are formed by cutting the parent package and are smaller in size. Each package 13 contains one, two or more conductive pillars 12.

[0059] With multiple smaller encapsulated bodies 13, the conductive layer 15 experiences less thermal deformation when subjected to high temperatures. The thermal stress generated by the thermal expansion of multiple encapsulated bodies 13 is more dispersed, and the encapsulated body 16 can restrict the position of multiple encapsulated bodies 13. Thus, the structure of the conductive layer 15 can remain stable and will not warp.

[0060] Before cutting the mother package, a number of conductive posts 12 can be embedded into a number of first receiving holes 1331. Alternatively, after cutting the mother package, a number of conductive posts 12 can be embedded into the first receiving holes 1331 of multiple packages 13.

[0061] like Figure 20 As shown, the conductive layer 15 has a second surface 132, and the first surface 131 and the second surface 132 are disposed opposite to each other, respectively located on both sides of the thickness direction of the conductive layer 15. In one embodiment of the present invention, the interconnect layer 10 further includes a substrate layer 14, which is disposed on the second surface 132. The substrate layer 14 has a third surface 141 for connecting with the second surface 132.

[0062] In this embodiment, forming the interconnect layer 10 on the substrate 110 includes the following steps: like Figure 14 As shown, a substrate layer 14 is provided. The substrate layer 14 may be made of materials such as silicon, glass, and resin, and its thickness is from 20 μm to 250 μm.

[0063] A plurality of conductive pillars 12 are directly formed on the third surface 141 of the substrate layer 14. The conductive pillars 12 can be grown from the substrate layer 14 by gradient plating. Alternatively, a plurality of conductive pillars 12 can be pre-formed and then connected to the third surface 141.

[0064] like Figure 15 As shown, the bridge structure 11 is connected to the third surface 141. The bridge structure 11 needs to be pre-fabricated.

[0065] like Figure 16-19 As shown, an encapsulation 13 is formed on the third surface 141, the encapsulation 13 is encapsulated with a bridge structure 11 and a number of conductive pillars 12, and the carrier 151 includes the encapsulation 13.

[0066] like Figure 20 As shown, a substrate layer 14 is connected to the substrate 110. A circuit structure may be formed on the surface and / or inside of the substrate layer 14 to electrically connect the substrate 110 and a plurality of conductive pillars 12.

[0067] Using the above steps, the interconnect layer 10 can be pre-fabricated and then integrally connected to the substrate 110. The fabrication of the interconnect layer 10 is not limited by the substrate 110, and its process can be more flexible. Furthermore, after the interconnect layer 10 is fabricated, the substrate layer 14 can be directly connected to the substrate 110, making it relatively easy to connect the interconnect layer 10 to the substrate 110.

[0068] The above step "forming inclusion 13 on the third surface 141" includes the following steps: like Figure 16-17As shown, a molding container 200 is provided. After a liquid isolation layer material 300 is coated on the inner wall of the molding container 200, a liquid encapsulation material 13' is filled into the molding container 200. The isolation layer material 300 and the encapsulation material 13' are immiscible, and the isolation layer material 300 can isolate the molding container 200 and the liquid encapsulation material 13'.

[0069] like Figure 18 As shown, the bridge structure 11 and several conductive pillars 12 are immersed in the encapsulation material 13', and the third surface 141 of the substrate layer 14 contacts the encapsulation material 13'. In the above steps, the height of each of the conductive pillars 12 is not less than the distance from the third surface 141 to the insulating layer material 300, and the end of the bridge structure 11 away from the substrate layer 14 is higher than the conductive pillars 12. Thus, when the third surface 141 of the substrate layer 14 contacts the encapsulation material 13', the conductive pillars 12 can contact the insulating layer material 300, and the end of the bridge structure 11 away from the substrate layer 14 can extend beyond the encapsulation material 13'.

[0070] The inclusion material 13' and the isolation layer material 300 are cured. After the inclusion material 13' is cured, it is formed into the inclusion 13 described above.

[0071] Remove the molding container 200 to separate it from the insulating layer material 300. Then, remove the insulating layer material 300. The top surfaces of the bridge structure 11 and the plurality of conductive pillars 12 are exposed to the outside of the enclosure 13.

[0072] In the above steps, the bridge structure 11 and several conductive pillars 12 are first immersed in the encapsulation material 13', and then the encapsulation material 13' is cured to form an encapsulated bridge structure 11 and several conductive pillars 12, making the encapsulation process relatively convenient. An isolation layer material 300 is provided between the encapsulation material 13' and the molding container 200, so that the bridge structure 11 and several conductive pillars 12 can extend beyond the encapsulation material 13' to the side facing away from the substrate layer 14, thereby forming the required interconnect layer 10 structure.

[0073] like Figure 19 As shown, in one embodiment of the present invention, a substrate layer 14 is provided, which is a complete and independent substrate. Thus, the interconnect layer 10 has a simple structure, is easy to manufacture, and can reduce the manufacturing cost of the packaging structure 100.

[0074] like Figure 21-22 As shown, in one embodiment of the present invention, the substrate layer 14 has a plurality of substrate blocks, which are spaced apart. During the formation of the encapsulation 13, a plurality of conductive pillars 12 and a plurality of bridge structures 11 on the plurality of substrate blocks are immersed together into the encapsulation material 13'. The formed encapsulation 13 encapsulates the substrate layer 14, the plurality of conductive pillars 12, and the plurality of bridge structures 11.

[0075] The matrix blocks can be manufactured separately. Alternatively, a larger parent matrix layer can be manufactured first, and then the parent matrix layer can be cut to form multiple matrix blocks.

[0076] like Figure 21 As shown, in this embodiment, the encapsulation body 13 encapsulates multiple substrate blocks, which can fix the position of the multiple substrate blocks. When multiple substrate blocks are provided, the thermal deformation of a single substrate block in the substrate layer 14 is small when the conductive layer 15 is subjected to high temperature, the thermal stress generated by the thermal expansion of the substrate block is more dispersed, and the encapsulation body 13 can restrict the position of multiple substrate blocks. In this way, the structure of the conductive layer 15 can remain stable and will not warp.

[0077] like Figure 20 As shown, a plurality of bumps 12011 are formed on the side of the chip 1201 facing the first redistribution layer 20. The chip 1201 can be electrically connected to related structures through the plurality of bumps 12011. The bumps 12011 can be made of metal materials such as copper and gold with good conductivity.

[0078] The tops of several bumps 12011 are at the same height, and at least two chips 1201 are connected to the first rewiring layer 20 and the bridge structure 11 through several bumps 12011.

[0079] Since the top surface of the portion of the bridge structure 11 extending beyond the first surface 131 is at the same height as the top surface of the first redistribution layer 20, and the tops of the bumps 12011 are at the same height, the chip 1201 can achieve a stable connection with the first redistribution layer 20 and the bridge structure 11 through the bumps 12011. The bumps 12011 of the chip 1201 do not need to be made at different heights, which reduces the manufacturing cost of the package structure 100.

[0080] like Figure 6 As shown, in one embodiment of the present invention, the step of "forming a first redistribution layer 20 on the first surface 131" includes the following steps: At least two independent rewiring regions 21 are formed on the first surface 131, and the bridge structure 11 separates the at least two rewiring regions 21. Understandably, the first rewiring layer 20 includes at least two independent rewiring regions 21.

[0081] By employing the above steps, when the first wiring layer 20 cannot be fabricated as a whole due to limitations such as mask size, the first wiring layer 20 can be fabricated in sections to achieve a larger size. Each wiring region 21 is smaller in size, resulting in a lower probability of defects. Fabricating the first wiring layer 20 in sections further reduces the probability of defects.

[0082] The step of “forming at least two independent redistribution regions 21 on the first surface 131” includes the following steps: The material of the first redistribution layer 20 is formed on the first surface 131 and the bridge structure 11; The material of the first rewiring layer 20 formed on the bridge structure 11 is removed, so that only the part of the material of the first rewiring layer 20 formed on the first surface 131 remains. The material of the first rewiring layer 20 formed on the first surface 131 is divided by the bridge structure 11, which can form at least two independent rewiring regions 21.

[0083] By using the above steps, the position of the bridge structure 11 can be avoided when forming the first redistribution layer 20, which is beneficial to the forming of the first redistribution layer 20. The material of the first redistribution layer 20 formed on the bridge structure 11 is subsequently removed by appropriate means, and after removal, the material of the first redistribution layer 20 formed on the first surface 131 can form at least two independent redistribution areas 21.

[0084] Combination Figure 23 As shown, the bridge structure 11 includes a bridge substrate 111 and a conductive structure 112. The bridge substrate 111 is embedded in the conductive layer 15, and the conductive structure 112 is disposed on the bridge substrate 111. The bridge substrate 111 can be made of silicon material; therefore, the bridge structure 11 can be called a "silicon bridge." The conductive structure 112 is made of a metal material with good conductivity, such as copper or gold, and is used to connect different chips 1201.

[0085] The conductive structure 112 includes at least two protrusions 1121 that protrude from the side of the bridge substrate 111 opposite to the substrate 110. The at least two protrusions 1121 are respectively connected to at least two chips 1201, and the at least two chips 1201 are electrically connected through the conductive structure 112 of the bridge structure 11. The height of the protrusions 1121 from the side of the bridge substrate 111 opposite to the substrate 110 is from 3 μm to 10 μm.

[0086] Understandably, the top surface of the portion of the bridge structure 11 extending beyond the first surface 131 is the top surface of at least two protrusions 1121.

[0087] The above step of "forming the first redistribution layer 20 on the first surface 131" includes the following steps: like Figure 24 As shown, a metal layer 22 is formed for fabricating the first redistribution layer 20. The top end of the metal layer 22 is higher than the protrusion 1121, and the bottom end is lower than the protrusion 1121. like Figure 25 As shown, the metal layer 22 is ground along the height direction so that the top of the metal layer 22 is flush with the top of the protrusion 1121.

[0088] The metal layer 22 is used to achieve a conductive connection with the chip 1201. In the above steps, the metal layer 22 is first formed, and then the metal layer 22 is ground along the height direction so that the top of the metal layer 22 is ground to be flush with the top of the protrusion 1121. The top of the metal layer 22 is higher than the protrusion 1121, and the bottom is lower than the protrusion 1121. During grinding, after the part of the metal layer 22 that is higher than the top of the protrusion 1121 is completely ground away, the metal layer 22 can still retain a part of its thickness, and the metal layer 22 will not be completely ground away.

[0089] like Figure 26-27 As shown, in one embodiment of the present invention, the method for preparing the encapsulation structure further includes the following steps: A second wiring layer 30 is formed, which is part of the interposer layer 130. The second wiring layer 30 is formed on the second surface 132 and is disposed opposite to the first wiring layer 20. The top surface of the conductive pillar 12 is electrically connected to the first wiring layer 20, and the bottom surface of the conductive pillar 12 is electrically connected to the second wiring layer 30. The second wiring layer 30 electrically connects the substrate 110 and the plurality of conductive pillars 12. The provision of the second wiring layer 30 enables better interconnection between the substrate 110 and the plurality of conductive pillars 12.

[0090] like Figure 7 As shown, an embodiment of the present invention also provides a packaging structure 100. This packaging structure 100 is prepared by the method described above.

[0091] The package structure 100 includes a substrate 110, a chipset 120, and an interposer 130. The chipset 120 includes at least two chips 1201. The interposer 130 is disposed between the substrate 110 and the chipset 120 and is used to electrically connect the substrate 110 and the at least two chips 1201 in the chipset 120.

[0092] Intermediate layer 130 includes interconnect layer 10 and first redistribution layer 20. Interconnect layer 10 includes conductive layer 15 and bridge structure 11 embedded in conductive layer 15. Conductive layer has a first surface 131, a portion of bridge structure 11 extends beyond the first surface 131, and the remainder of bridge structure 11 is embedded in conductive layer 15.

[0093] The first redistribution layer 20 is formed on the first surface 131. The top surface of the portion of the bridge structure 11 extending beyond the first surface 131 is at the same height as the top surface of the first redistribution layer 20. The conductive layer 15 can be used to electrically connect the substrate 110 and the first redistribution layer 20.

[0094] At least two chips 1201 in the chipset 120 are connected to the first rewiring layer 20 and interconnected by a bridge structure 11.

[0095] In the packaging structure 100 provided in this embodiment, the substrate 110 and the first redistribution layer 20 can be electrically connected through the conductive layer 15. The thickness of the first redistribution layer 20 is equal to the thickness of the portion of the bridge structure 11 that extends beyond the first surface 131, so that the top surface of the first redistribution layer 20 and the top surface of the bridge structure 11 are at the same height. This facilitates the simultaneous connection of the chip 1201 to the first redistribution layer 20 and the bridge structure 11. The chip 1201 can simultaneously form a stable electrical connection with both the first redistribution layer 20 and the bridge structure 11. Furthermore, the required thickness of the first redistribution layer 20 is relatively small, which reduces the manufacturing cost of the packaging structure 100.

[0096] In this embodiment, the conductive layer 15 includes a carrier 151 and a plurality of conductive pillars 12. Each conductive pillar 12 includes a top surface, a bottom surface, and an outer peripheral surface, with the top and bottom surfaces facing each other. The carrier 151 covers the outer peripheral surfaces of the conductive pillars 12. The conductive pillars 12 conduct electricity and can be made of copper- or gold-containing materials to achieve good conductivity. The conduction direction of the conductive pillars 12 is along the thickness direction of the conductive layer 15. A bridge structure 11 is located between the conductive pillars 12.

[0097] The top surfaces of the plurality of conductive pillars 12 constitute at least a portion of the first surface 131, that is, the first redistribution layer 20 is formed at least on the top surfaces of the plurality of conductive pillars 12. The first surface 131 is disposed away from the substrate 110, and the substrate 110 and the first redistribution layer 20 can be electrically connected through the plurality of conductive pillars 12.

[0098] A plurality of conductive pillars 12 are electrically connected to the substrate 110 and the first redistribution layer 20, enabling the conductive layer 15 to conduct electricity. Based on the above, the carrier 151 can protect the plurality of conductive pillars 12 and fix the position of the plurality of conductive pillars 12, thereby maintaining the stability of the overall structure of the conductive layer 15.

[0099] like Figure 11-12 As shown, in one embodiment of the present invention, the carrier 151 includes at least one package 13, and a plurality of first receiving holes 1331 are provided in the package, and a plurality of conductive posts 12 are respectively embedded in the plurality of first receiving holes 1331.

[0100] The enclosure 13 can effectively define the position of the conductive pillars 12, ensure the positional accuracy of the conductive pillars 12, and enable the conductive pillars 12 to be easily connected to the substrate 110.

[0101] like Figure 13As shown, in one embodiment of the present invention, the carrier 151 further includes a molding compound 16, which encapsulates at least one package 13. The molding compound 16 is made of resin. The molding compound 16 can protect the package and reduce the impact of external mechanical shocks, vibrations, or environmental factors on the package 16 and the conductive post 12. When multiple packages 13 are provided, the molding compound 16 can also connect and fix the multiple packages 13.

[0102] When selecting resins for the encapsulation body 13 and the encapsulation body 16, PP (polypropylene) can be selected.

[0103] In one embodiment of the present invention, the package 13 is provided as a single unit. The package 13 has a plurality of first receiving holes 1331 formed thereon, and a plurality of conductive posts 12 are embedded within the plurality of first receiving holes 1331. The package 13 being a single unit allows for easy connection to the substrate 110, reducing the manufacturing cost of the packaging structure 100.

[0104] In one embodiment of the present invention, multiple packages 13 are provided. Compared to the case where the packages 13 are a single unit, when multiple packages 13 are provided, the size of each individual package 13 is smaller, and the number of receiving holes formed thereon is also smaller. For example, the number of first receiving holes 1331 on a single package 13 is set to 1 to 3.

[0105] With multiple smaller encapsulated bodies 13, the conductive layer 15 experiences less thermal deformation when subjected to high temperatures. The thermal stress generated by the thermal expansion of multiple encapsulated bodies 13 is more dispersed, and the encapsulated body 16 can restrict the position of multiple encapsulated bodies 13. Thus, the structure of the conductive layer 15 can remain stable and will not warp.

[0106] like Figures 19-20 As shown, in one embodiment of the present invention, the conductive layer 15 has a second surface 132, and the first surface 131 and the second surface 132 are disposed opposite to each other, respectively located on both sides of the thickness direction of the conductive layer 15. In one embodiment of the present invention, the interconnect layer 10 further includes a substrate layer 14, which is disposed on the second surface 132. The substrate layer 14 has a third surface 141 for connecting with the second surface 132.

[0107] An encapsulation 13 and several conductive pillars 12 are formed on the third surface 141, and a bridge structure 11 is connected to the third surface 141. The interconnect layer 10 can be pre-fabricated and then integrally connected to the substrate 110. The fabrication of the interconnect layer 10 is not limited by the substrate 110, and its process can be more flexible. Furthermore, after the interconnect layer 10 is fabricated, the substrate layer 14 can be directly connected to the substrate 110, and the interconnect layer 10 can be easily connected to the substrate 110.

[0108] like Figure 19 As shown, in one embodiment of the present invention, the substrate layer 14 is a complete and independent substrate. Thus, the interconnect layer 10 has a simple structure, is easy to manufacture, and can reduce the manufacturing cost of the packaging structure 100.

[0109] like Figure 21-22 As shown, in one embodiment of the present invention, the substrate layer 14 has a plurality of substrate blocks, which are spaced apart. During the formation of the encapsulation 13, a plurality of conductive pillars 12 and a plurality of bridge structures 11 on the plurality of substrate blocks are immersed together into the encapsulation material 13'. The formed encapsulation 13 encapsulates the substrate layer 14, the plurality of conductive pillars 12, and the plurality of bridge structures 11.

[0110] The matrix blocks can be manufactured separately. Alternatively, a larger parent matrix layer can be manufactured first, and then the parent matrix layer can be cut to form multiple matrix blocks.

[0111] like Figure 21 As shown, in this embodiment, the encapsulation body 13 encapsulates multiple substrate blocks, which can fix the position of the multiple substrate blocks. When multiple substrate blocks are provided, the thermal deformation of a single substrate block in the substrate layer 14 is small when the conductive layer 15 is subjected to high temperature, the thermal stress generated by the thermal expansion of the substrate block is more dispersed, and the encapsulation body 13 can restrict the position of multiple substrate blocks. In this way, the structure of the conductive layer 15 can remain stable and will not warp.

[0112] like Figure 26-27 As shown, in one embodiment of the present invention, the conductive layer 15 has a second surface 132 opposite to the first surface 131. The interposer layer 130 further includes a second redistribution layer 30 formed on the second surface 132. The bottom surfaces of a plurality of conductive pillars 12 constitute at least a portion of the second surface 132. The top surfaces of the conductive pillars 12 are electrically connected to the first redistribution layer 20, and the bottom surfaces of the conductive pillars 12 are electrically connected to the second redistribution layer 30. The provision of the second redistribution layer 30 enables better interconnection between the substrate 110 and the plurality of conductive pillars 12.

[0113] like Figure 26 As shown, in one embodiment of the present invention, the first rewiring layer 20 includes at least two independent rewiring regions 21, and the bridge structure 11 separates the at least two rewiring regions 21.

[0114] When the first wiring layer 20 cannot be fabricated as a whole due to limitations such as mask size, the first wiring layer 20 can be fabricated in sections to form a larger size first wiring layer 20. Each wiring area 21 is smaller in size, and the probability of defects is lower. Fabricating the first wiring layer 20 in sections can further reduce the probability of defects in the first wiring layer 20.

[0115] In this embodiment, the ratio of the thickness of the first wiring layer 20 to the thickness of the conductive layer 15 is 0.5 to 1. This ensures that the thickness of the first wiring layer 20 is moderate—neither too thick, which would increase the manufacturing cost of the package structure 100, nor too thin, which would result in excessive impedance and warping. The thickness of the bridge structure 11 is no greater than the sum of the thicknesses of the conductive layer 15 and the first wiring layer 20, thus preventing the bridge structure 11 from extending beyond the top surface of the first wiring layer 20.

[0116] In this embodiment, the thickness of the first redistribution layer 20 is 20um to 40um, the thickness of the conductive layer 15 is 20um to 60um, and the thickness of the bridge structure 11 is 50um to 100um.

[0117] Other features of the interposer 130 and the encapsulation structure 100 have been described in the above description of the preparation method of the encapsulation structure, and will not be repeated here.

[0118] It should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0119] The above embodiments are only used to illustrate the technical solutions of this application and are not intended to limit it. Although this application has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of this application without departing from the spirit and scope of the technical solutions of this application.

Claims

1. An intermediary layer, characterized in that, The intermediary layer includes: An interconnect layer, the interconnect layer including a conductive layer and a bridge structure embedded in the conductive layer, the conductive layer having a first surface, and a portion of the bridge structure extending beyond the first surface; A first wiring layer is formed on the first surface, and the top surface of the portion of the bridge structure extending beyond the first surface is at the same height as the top surface of the first wiring layer.

2. The intermediary layer according to claim 1, characterized in that, The conductive layer includes a carrier and a plurality of conductive pillars. Each conductive pillar has an opposing top surface, bottom surface, and outer peripheral surface. The carrier wraps around the outer peripheral surface of the plurality of conductive pillars. The top surface of the plurality of conductive pillars constitutes at least a portion of the first surface. The conductive direction of the conductive pillars is arranged along the thickness direction of the conductive layer.

3. The intermediary layer according to claim 2, characterized in that, The carrier includes at least one encapsulation body, the encapsulation body is provided with a plurality of first receiving holes, and a plurality of conductive pillars are respectively embedded in the plurality of first receiving holes. The material of the encapsulation body is selected from at least one of silicon, glass and resin.

4. The intermediary layer according to claim 3, characterized in that, The carrier further includes a sealant that encapsulates at least one of the encapsulated bodies, and the sealant is made of resin.

5. The intermediary layer according to claim 2, characterized in that, The interconnect layer further includes a substrate layer, the conductive layer has a second surface opposite to the first surface, the substrate layer is disposed on the second surface, the substrate layer has a third surface connected to the second surface, a plurality of conductive pillars are formed on the third surface, and the bridge structure is connected to the third surface.

6. The intermediary layer according to claim 2, characterized in that, The conductive layer has a second surface opposite to the first surface, and the intermediate layer further includes a second redistribution layer formed on the second surface. The top surface of the conductive pillar is electrically connected to the first redistribution layer, and the bottom surface of the conductive pillar is electrically connected to the second redistribution layer.

7. The intermediary layer according to claim 1, characterized in that, The ratio of the thickness of the first rewiring layer to the thickness of the conductive layer is 0.5 to 1, and the thickness of the bridge structure is not greater than the sum of the thicknesses of the conductive layer and the first rewiring layer.

8. A packaging structure comprising a substrate, a chipset disposed on one side of the substrate, and an interposer layer disposed between the substrate and the chipset, wherein the chipset comprises at least two chips, characterized in that, The intermediate layer is the intermediate layer as described in any one of claims 1-7, and at least two of the chips in the chipset are connected to the first rewiring layer and interconnected through the bridge structure.

9. A method for preparing a packaging structure, characterized in that, Includes the following steps: Provide substrate; An interconnect layer is formed on the substrate. The interconnect layer includes a conductive layer and a bridge structure embedded in the conductive layer. The conductive layer has a first surface, and a portion of the bridge structure extends beyond the first surface. The first surface is located on the side of the conductive layer away from the substrate. A first redistribution layer is formed on the first surface, the top surface of the bridge structure extending beyond the first surface and the top surface of the first redistribution layer are at the same height, and the conductive layer electrically connects the substrate and the first redistribution layer. At least two chips are connected to the first rewiring layer, and at least two of the chips are interconnected through the bridge structure.

10. The preparation method according to claim 9, characterized in that, The conductive layer includes a carrier and a plurality of conductive pillars. Each conductive pillar has a top surface, a bottom surface, and an outer peripheral surface. The carrier wraps around the outer peripheral surfaces of the plurality of conductive pillars. The top surfaces of the plurality of conductive pillars constitute at least a portion of the first surface. The conductive direction of the conductive pillars is set along the thickness direction of the conductive layer. The step of "forming an interconnect layer on the substrate" includes the following steps: A plurality of the conductive pillars are formed directly on the substrate, or a plurality of the conductive pillars are soldered to the substrate; The bridge structure is connected to the substrate; An encapsulation is formed to encapsulate the bridge structure and the plurality of conductive pillars, the carrier comprising the encapsulation.

11. The preparation method according to claim 10, characterized in that, The step of "forming an interconnect layer on the substrate" includes the following steps: At least one package is provided, wherein a plurality of first receiving holes are provided within the package; the carrier includes at least one package. After embedding a plurality of the conductive pillars into a plurality of the first receiving holes, at least one of the encapsulated bodies is connected to the substrate; or after connecting at least one of the encapsulated bodies to the substrate, a plurality of the conductive pillars are embedded into a plurality of the first receiving holes. The bridge structure is connected to the substrate.

12. The preparation method according to claim 11, characterized in that, The step of "forming an interconnect layer on the substrate" further includes the following steps: A molding compound is formed, the molding compound encapsulating the bridge structure and at least one of the encapsulated bodies, the carrier comprising the molding compound and at least one of the encapsulated bodies.

13. The preparation method according to claim 10, characterized in that, The conductive layer has a second surface opposite to the first surface, and the interconnect layer further includes a substrate layer disposed on the second surface. The substrate layer has a third surface for connecting to the second surface. The step of "forming an interconnect layer on the substrate" includes the following steps: Provide a matrix layer; A plurality of the conductive pillars are directly formed on the third surface of the substrate layer; The bridge structure is connected to the third surface; An encapsulation is formed on the third surface, the encapsulation encapsulating the bridge structure and the plurality of conductive pillars, and the carrier includes the encapsulation; The substrate layer is attached to the substrate.

14. The preparation method according to claim 13, characterized in that, The step of "forming the inclusion on the third surface" includes the following steps: A molding container is provided, and after the inner wall of the molding container is coated with a liquid isolation layer material, the liquid encapsulation material is filled into the molding container. The bridge structure and the plurality of conductive pillars are immersed in the encapsulation material, and the third surface of the substrate layer is in contact with the encapsulation material. The height of each of the plurality of conductive pillars is not less than the distance from the third surface to the isolation layer material. The end of the bridge structure away from the substrate layer is higher than the plurality of conductive pillars. Solidify the inclusion material and the isolation layer material; Remove the molded container and the insulating layer material to expose the top surfaces of the bridge structure and the plurality of conductive pillars to the outside of the package.

15. The preparation method according to claim 9, characterized in that, The chip has a plurality of bumps on the side facing the first redistribution layer, and the tops of the plurality of bumps are at the same height. At least two chips are connected to the first redistribution layer and the bridge structure through the plurality of bumps.

16. The preparation method according to claim 9, characterized in that, The step of "forming a first redistribution layer on the first surface" includes the following steps: At least two independent rewiring regions are formed on the first surface, and the bridge structure separates the at least two rewiring regions.

17. The preparation method according to claim 16, characterized in that, The step of "forming at least two independent redistribution regions on the first surface" includes the following steps: The material on which the first redistribution layer is formed on the first surface and the bridge structure; Remove the material from the first rewiring layer formed on the bridge structure so that the material of the first rewiring layer formed on the first surface can form the at least two independent rewiring regions.

18. The preparation method according to claim 9, characterized in that, The bridge structure includes a bridge substrate embedded in the conductive layer and a conductive structure disposed in the bridge substrate. The conductive structure includes at least two protrusions that protrude from the side of the bridge substrate away from the substrate, and the at least two protrusions are respectively connected to at least two chips.

19. The preparation method according to claim 18, characterized in that, The step of "forming a first redistribution layer on the first surface" includes the following steps: A metal layer is formed for fabricating the first redistribution layer, wherein the top end of the metal layer is higher than the protrusion and the bottom end is lower than the protrusion; The metal layer is ground along the height direction so that the top of the metal layer is flush with the top of the protrusion.

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