A method and system for packaging a gallium nitride power transistor

Abstract

The application relates to a packaging method and system of a gallium nitride power transistor, which comprises the following steps: obtaining a surface image of the gallium nitride power transistor, pre-processing the surface image to obtain a pre-processed image, and arranging a plurality of chips on the surface of the gallium nitride power transistor; identifying a first image mask area and a second image mask area from the pre-processed image; generating a coordinate system based on the first image mask area and the second image mask area, and obtaining an initial coordinate of a tube shell heat sink area on the surface of the gallium nitride power transistor and a dispenser based on the coordinate system; measuring the actual distance between the dispenser and the tube shell heat sink area by using a height measuring needle based on the initial coordinate, compensating the initial coordinate of the dispenser based on the actual distance and a preset interval value, obtaining a compensated coordinate of the dispenser, and performing dispensing operation based on the compensated coordinate. Through the application, the precision of dispensing is improved, and the problems of unstable glue shape and unstable glue amount on the tube shell heat sink area are solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a packaging method and system for gallium nitride power transistors. Background Technology

[0002] Die bonding is one of the key processes in chip packaging. In the packaging of gallium nitride transistors, the positional accuracy and tilt of the die directly affect subsequent wire bonding processes. The coating rate, creep, and thickness of the conductive adhesive during die bonding directly affect the thermal and electrical conductivity of the solder joints, thus impacting product reliability. These issues are typically addressed by adjusting the adhesive material and die bonding process parameters.

[0003] Currently, most domestic manufacturing processes determine the shell position by identifying the identification points obtained from the punching holes on the shell pins. Due to manufacturing process limitations, the depth of the heat sink area of ​​domestic shells usually has a tolerance of 50~80um. The inconsistent shell thickness leads to the problem of unstable adhesive shape caused by the different relative positions of the dispensing needle and the surface of the heat sink area of ​​the shell. The dispensing height of RF devices is usually around 120um. Such a large tolerance will lead to the instability of the adhesive shape and amount on the heat sink area of ​​the shell, affecting the bonding effect. Summary of the Invention

[0004] Therefore, the purpose of this invention is to provide a packaging method and system for gallium nitride power transistors to overcome the shortcomings of the prior art.

[0005] To achieve the above objectives, the present invention provides a method for packaging gallium nitride power transistors, the method comprising: A surface image of a gallium nitride power transistor is acquired using a camera, and the surface image is preprocessed to obtain a preprocessed image. The surface of the gallium nitride power transistor is provided with multiple chips arranged in a vertical row. Identify a first image mask region and a second image mask region from the preprocessed image, wherein the first image mask region is the upper part of the first chip and the second image mask region is the lower part of the last chip; A coordinate system is generated based on the first image mask region and the second image mask region. The initial coordinates of the heat sink area of ​​the casing and the dispensing device on the surface of the gallium nitride power transistor are obtained based on the coordinate system. Based on the initial coordinates, the actual distance between the dispensing device and the heat sink area of ​​the tube shell is measured by a height measuring needle. The initial coordinates of the dispensing device are compensated based on the actual distance and a preset spacing value to obtain the compensated coordinates of the dispensing device, so as to perform the dispensing operation based on the compensated coordinates.

[0006] The beneficial effects of this invention are as follows: A surface image of a gallium nitride (GaN) power transistor is acquired using a camera. This image is preprocessed, and then a first image mask region and a second image mask region are identified from the processed image. A coordinate system is generated based on these two image mask regions. The initial coordinates of the heat sink area of ​​the GaN power transistor surface and the dispensing device are obtained based on this coordinate system. The actual distance between the dispensing device and the heat sink area is measured using a height probe based on these initial coordinates. The initial coordinates of the dispensing device are compensated based on this actual distance and a preset spacing value. Dispensing is then performed based on the compensation result. This invention differs from existing technologies in that it improves dispensing accuracy, addresses the problem of unstable adhesive shape and quantity on the heat sink area, and thus enhances die bonding performance.

[0007] Furthermore, after performing the dispensing operation based on the compensated coordinates, the method further includes: The initial position and initial angle of the capacitor material are determined based on the coordinate system. The initial position and angle of the capacitor material are calibrated by calibrating the camera to obtain the latest position and angle. Based on the latest position and angle, the capacitor material is mounted by the bonding head.

[0008] Furthermore, the step of preprocessing the surface image includes: The surface image is standardized to obtain a standardized image; The standardized image is then subjected to denoising and contrast enhancement processes sequentially to obtain the key image; Edge detection processing is performed on the key image using the Sobel algorithm to highlight the surface structure contour of the gallium nitride power transistor.

[0009] Furthermore, the step of identifying the first image mask region and the second image mask region from the preprocessed image includes: The preprocessed image is binarized to extract the surface structure contour of the gallium nitride power transistor, and the overall chip contour of all the chips is identified from the surface structure contour. Based on the overall chip outline, the chips are sorted from top to bottom to determine the first and last chips. The first and last chips are proportionally divided, and corresponding binary masks are generated to mark the first image mask area and the second image mask area.

[0010] Furthermore, the step of generating a coordinate system based on the first image mask region and the second image mask region includes: The line connecting the first image mask region and the second image mask region is taken as the X-axis, the midpoint between the first image mask region and the second image mask region is taken as the origin, and the straight line passing through the origin and perpendicular to the X-axis is taken as the Y-axis.

[0011] To achieve the above objectives, the present invention also provides a gallium nitride power transistor packaging system for implementing the gallium nitride power transistor packaging method described above, the system comprising: A preprocessing module is used to acquire a surface image of a gallium nitride power transistor through a camera, preprocess the surface image to obtain a preprocessed image, wherein the surface of the gallium nitride power transistor is provided with multiple chips arranged in a vertical row; The recognition module is used to identify a first image mask region and a second image mask region from the preprocessed image, wherein the first image mask region is the upper part of the first chip and the second image mask region is the lower part of the last chip. The generation module is used to generate a coordinate system based on the first image mask area and the second image mask area, and to obtain the initial coordinates of the heat sink area of ​​the casing and the dispensing device on the surface of the gallium nitride power transistor based on the coordinate system; The compensation module is used to compensate the initial coordinates of the dispensing device based on the initial coordinates and by measuring the actual distance between the dispensing device and the heat sink area of ​​the tube shell using a height measuring needle. Based on the actual distance and a preset spacing value, the initial coordinates of the dispensing device are compensated to obtain the compensated coordinates of the dispensing device, so as to perform the dispensing operation based on the compensated coordinates.

[0012] Furthermore, following the compensation module, the system further includes: The determination module is used to determine the initial position and initial angle of the capacitor material based on the coordinate system. The mounting module is used to calibrate the initial position and initial angle of the capacitor material using a calibration camera to obtain the latest position and latest angle, and then perform a mounting operation on the capacitor material using a bonding head based on the latest position and latest angle.

[0013] Furthermore, the preprocessing module includes: A standardization unit is used to perform standardization processing on the surface image to obtain a standardized image; A denoising and enhancement unit is used to sequentially perform denoising and contrast enhancement processing on the standardized image to obtain a key image; An edge detection unit is used to perform edge detection processing on the key image using the Sobel algorithm to highlight the surface structure contour of the gallium nitride power transistor. Attached Figure Description

[0014] Figure 1 This is a flowchart of a gallium nitride power transistor packaging method according to an embodiment of the present invention; Figure 2 This is a structural block diagram of a gallium nitride power transistor packaging system according to an embodiment of the present invention.

[0015] The following detailed description, in conjunction with the accompanying drawings, will further illustrate the present invention. Detailed Implementation

[0016] To make the objectives, technical solutions, and advantages of this application clearer, the application is described and illustrated below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application. All other embodiments obtained by those skilled in the art based on the embodiments provided in this application without inventive effort are within the scope of protection of this application.

[0017] Obviously, the accompanying drawings described below are merely some examples or embodiments of this application. Those skilled in the art can apply this application to other similar scenarios based on these drawings without any inventive effort. Furthermore, it is understood that although the efforts made in this development process may be complex and lengthy, for those skilled in the art related to the content disclosed in this application, any changes to design, manufacturing, or production based on the technical content disclosed in this application are merely conventional technical means and should not be construed as insufficient disclosure of the content of this application.

[0018] In this application, the reference to "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment that is mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application may be combined with other embodiments without conflict.

[0019] Unless otherwise defined, the technical or scientific terms used in this application shall have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms “a,” “an,” “an,” “the,” and similar words used in this application do not indicate quantity limitation and may indicate singular or plural. The terms “comprising,” “including,” “having,” and any variations thereof used in this application are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or device that includes a series of steps or modules (units) is not limited to the listed steps or units, but may also include steps or units not listed, or may include other steps or units inherent to these processes, methods, products, or devices. The terms “connected,” “linked,” “coupled,” and similar words used in this application are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. “Multiple” used in this application refers to two or more. “And / or” describes the relationship between related objects, indicating that three relationships may exist; for example, “A and / or B” can represent: A alone, A and B simultaneously, and B alone. The character " / " generally indicates that the preceding and following objects are in an "or" relationship. The terms "first," "second," and "third" used in this application are merely to distinguish similar objects and do not represent a specific ordering of the objects.

[0020] Example 1 Please see Figure 1 The above is a flowchart of a gallium nitride power transistor packaging method according to the first embodiment of the present invention. The method includes the following steps: Step S101: Acquire a surface image of a gallium nitride power transistor using a camera, preprocess the surface image to obtain a preprocessed image, wherein the surface of the gallium nitride power transistor is provided with multiple chips arranged in a vertical row; First, the gallium nitride (GaN) power transistor is fed into the device. After the GaN power transistor is transferred to the dispensing area, a camera set in the dispensing area captures an image of the GaN power transistor's surface.

[0021] Step S102: Identify a first image mask region and a second image mask region from the preprocessed image, wherein the first image mask region is the upper part of the first chip and the second image mask region is the lower part of the last chip; Furthermore, the step of identifying the first image mask region and the second image mask region from the preprocessed image includes: The preprocessed image is binarized to extract the surface structure contour of the gallium nitride power transistor, and the overall chip contour of all the chips is identified from the surface structure contour. Based on the overall chip outline, the chips are sorted from top to bottom to determine the first and last chips. The first and last chips are proportionally divided, and corresponding binary masks are generated to mark the first image mask area and the second image mask area.

[0022] Each chip is matched with a corresponding bounding box. The upper 40% area of ​​the bounding box corresponding to the first chip is used as the first image mask area, and the lower 40% area of ​​the bounding box corresponding to the last chip is used as the second image mask area.

[0023] Step S103: Generate a coordinate system based on the first image mask area and the second image mask area, and obtain the initial coordinates of the heat sink area of ​​the casing and the dispensing device on the surface of the gallium nitride power transistor based on the coordinate system; Furthermore, the step of generating a coordinate system based on the first image mask region and the second image mask region includes: The line connecting the first image mask region and the second image mask region is taken as the X-axis, the midpoint between the first image mask region and the second image mask region is taken as the origin, and the straight line passing through the origin and perpendicular to the X-axis is taken as the Y-axis.

[0024] Step S104: Based on the initial coordinates, measure the actual distance between the dispensing device and the heat sink area of ​​the tube shell using a height measuring needle. Based on the actual distance and a preset spacing value, compensate the initial coordinates of the dispensing device to obtain the compensated coordinates of the dispensing device, and perform the dispensing operation based on the compensated coordinates.

[0025] The distance between the heat sink area of ​​the tube shell and the dispensing device must be maintained at a preset distance value. It is understandable that even tube shells of the same model may have slightly different thicknesses and tolerances. Therefore, it is necessary to compensate for the actual distance between the dispensing device and the heat sink area of ​​the tube shell before dispensing to improve the stability and consistency of the glue shape.

[0026] Through the above steps, a surface image of the gallium nitride power transistor is acquired by a camera, the surface image is preprocessed, and then a first image mask region and a second image mask region are identified from the processed image. A coordinate system is generated based on the first and second image mask regions. Based on this coordinate system, the initial coordinates of the heat sink area of ​​the gallium nitride power transistor surface and the dispensing device are obtained. Then, based on the initial coordinates, the actual distance between the dispensing device and the heat sink area of ​​the casing is measured by a height measuring needle. Based on the actual distance and a preset spacing value, the initial coordinates of the dispensing device are compensated, and the dispensing operation is performed based on the compensation result. This method differs from existing technologies, improves the dispensing accuracy, and improves the problem of unstable adhesive shape and amount on the heat sink area of ​​the casing, thereby improving the bonding effect.

[0027] Furthermore, after performing the dispensing operation based on the compensated coordinates, the method further includes: The initial position and initial angle of the capacitor material are determined based on the coordinate system. The initial position and angle of the capacitor material are calibrated by calibrating the camera to obtain the latest position and angle. Based on the latest position and angle, the capacitor material is mounted by the bonding head.

[0028] This step is completed within the die-bonding system, which integrates an identification camera, a calibration camera, and a die-bonding head. After dispensing, the gallium nitride power transistor moves to the die-bonding area. At the same time, the die-bonding head picks up the capacitor material through a vacuum nozzle. The identification camera identifies the first image mask area and the second image mask area to confirm the initial position and initial angle of the gallium nitride power transistor and the capacitor material.

[0029] After confirming that the gallium nitride power transistor is in the preset die-attachment position, the capacitor material is then calibrated using a calibration camera based on its initial position and angle to obtain its latest position and angle, enabling the appropriate mounting operation to be performed based on the latest position and angle.

[0030] Furthermore, the step of preprocessing the surface image includes: The surface image is standardized to obtain a standardized image; The standardization process involves converting the surface image into a format that is easy to process (such as an 8-bit or 16-bit grayscale image) to adjust it to a uniform size and resolution.

[0031] The standardized image is then subjected to denoising and contrast enhancement processes sequentially to obtain the key image; The standardized image is denoised using a Gaussian filtering algorithm to smooth the image, remove noise points, and preserve edge details. Then, histogram equalization is used to enhance the contrast of the denoised image to adjust the grayscale distribution and make the edges of surface morphology and defects cleaner.

[0032] Edge detection processing is performed on the key image using the Sobel algorithm to highlight the surface structure contour of the gallium nitride power transistor.

[0033] Among them, edge detection processing is used to detect areas with drastic grayscale changes in the image, thereby outlining the surface structure contour of the gallium nitride power transistor for subsequent feature extraction.

[0034] Example 2 Please see Figure 2The diagram shows a structural block diagram of a gallium nitride power transistor packaging system according to a second embodiment of the present invention. The system includes: Preprocessing module 10 is used to acquire a surface image of a gallium nitride power transistor through a camera, preprocess the surface image to obtain a preprocessed image, wherein the surface of the gallium nitride power transistor is provided with multiple chips arranged in a vertical row; The recognition module 20 is used to recognize a first image mask region and a second image mask region from the preprocessed image, wherein the first image mask region is the upper part of the first chip and the second image mask region is the lower part of the last chip. The generation module 30 is used to generate a coordinate system based on the first image mask area and the second image mask area, and to obtain the initial coordinates of the heat sink area of ​​the casing and the dispensing device on the surface of the gallium nitride power transistor based on the coordinate system. The compensation module 40 is used to compensate the initial coordinates of the dispensing device based on the initial coordinates and by measuring the actual distance between the dispensing device and the heat sink area of ​​the tube shell using a height measuring needle. Based on the actual distance and a preset spacing value, the initial coordinates of the dispensing device are compensated to obtain the compensated coordinates of the dispensing device, so as to perform the dispensing operation based on the compensated coordinates.

[0035] In practical implementation, a surface image of the gallium nitride power transistor is acquired through a camera. The surface image is preprocessed, and then a first image mask region and a second image mask region are identified from the processed image. A coordinate system is generated based on the first and second image mask regions. The initial coordinates of the heat sink area of ​​the gallium nitride power transistor surface and the dispensing device are obtained based on this coordinate system. Then, based on the initial coordinates, the actual distance between the dispensing device and the heat sink area of ​​the casing is measured using a height measuring needle. The initial coordinates of the dispensing device are compensated based on the actual distance and a preset spacing value. The dispensing operation is performed based on the compensation result. This method differs from existing technologies, improves the dispensing accuracy, and addresses the problem of unstable adhesive shape and amount on the heat sink area of ​​the casing, thereby improving the bonding effect.

[0036] Furthermore, after the compensation module 40, the system further includes: The determination module is used to determine the initial position and initial angle of the capacitor material based on the coordinate system. The placement module is used to calibrate the initial position and angle of the capacitor material using a calibration camera to obtain the latest position and angle, and then perform the placement operation on the capacitor material using a bonding head based on the latest position and angle.

[0037] Furthermore, the preprocessing module 10 includes: A standardization unit is used to perform standardization processing on the surface image to obtain a standardized image; A denoising and enhancement unit is used to sequentially perform denoising and contrast enhancement processing on the standardized image to obtain a key image; An edge detection unit is used to perform edge detection processing on the key image using the Sobel algorithm to highlight the surface structure contour of the gallium nitride power transistor.

[0038] Furthermore, the identification module 20 includes: An extraction unit is used to perform binarization processing on the preprocessed image to extract the surface structure contour of the gallium nitride power transistor, and to identify the overall chip contour of all the chips from the surface structure contour. The marking unit is used to sort the overall chip outline from top to bottom to determine the first chip and the last chip, divide the first chip and the last chip proportionally, generate corresponding binary masks, and mark the first image mask area and the second image mask area.

[0039] Furthermore, the generation module 30 includes: The generation unit is configured to use the line connecting the first image mask region and the second image mask region as the X-axis, the midpoint between the first image mask region and the second image mask region as the origin of the coordinate system, and the straight line passing through the origin of the coordinate system and perpendicular to the X-axis as the Y-axis.

[0040] Example 3 In a third embodiment of the present invention, based on the same inventive concept, the present invention proposes a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the gallium nitride power transistor packaging method of the above embodiments. The logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as a ordered list of executable instructions for implementing logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (such as a computer-based system, a processor-included system, or other system that can fetch and execute instructions from, an instruction execution system, apparatus, or device). For the purposes of this specification, "computer-readable medium" can be any means containing storage, communication, propagation, or transmission programs for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples of computer-readable media (a non-exhaustive list) include: electrical connections (electronic devices) having one or more wires, portable computer disk drives (magnetic devices), random access memory (RAM), read-only memory (ROM), erasable and editable read-only memory (EPROM or flash memory), fiber optic devices, and portable optical disc read-only memory (CDROM). Furthermore, computer-readable media can even be paper or other suitable media on which the program can be printed, because the program can be obtained electronically, for example, by optically scanning the paper or other medium, followed by editing, interpreting, or otherwise processing as necessary, and then stored in computer memory.

[0041] The memory may include a large-capacity storage device for data or instructions. For example, and not limitingly, the memory may include a hard disk drive (HDD), a floppy disk drive, a solid-state drive (SSD), flash memory, an optical disk drive, a magneto-optical disk drive, magnetic tape, or a Universal Serial Bus (USB) drive, or a combination of two or more of these. Where appropriate, the memory may include removable or non-removable (or fixed) media. Where appropriate, the memory may be internal or external to the data processing device. In a particular embodiment, the memory is non-volatile memory. In a particular embodiment, the memory includes read-only memory (ROM) and random access memory (RAM). Where appropriate, the ROM may be a mask-programmed ROM, a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), an electrically alterable read-only memory (EAROM), or flash memory, or a combination of two or more of these. Where appropriate, the RAM can be Static Random-Access Memory (SRAM) or Dynamic Random-Access Memory (DRAM). DRAM can be Fast Page Mode Dynamic Random-Access Memory (FPMDRAM), Extended Data Out Dynamic Random-Access Memory (EDODRAM), Synchronous Dynamic Random-Access Memory (SDRAM), etc.

[0042] Example 4 In the fourth embodiment of the present invention, based on the same inventive concept, the present invention proposes a terminal, the terminal comprising: a processor and a memory; the processor and the memory communicate with each other; the memory is used to store instructions; the processor is used to execute the instructions in the memory to execute the gallium nitride power transistor packaging method of the above embodiment.

[0043] It should be understood that various parts of the present invention can be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, multiple steps or methods can be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

[0044] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0045] Without causing conflict, those skilled in the art can freely combine and use the above-mentioned additional technical features.

[0046] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for packaging gallium nitride power transistors, characterized in that, The method includes: A surface image of a gallium nitride power transistor is acquired using a camera, and the surface image is preprocessed to obtain a preprocessed image. The surface of the gallium nitride power transistor is provided with multiple chips arranged in a vertical row. Identify a first image mask region and a second image mask region from the preprocessed image, wherein the first image mask region is the upper part of the first chip and the second image mask region is the lower part of the last chip; A coordinate system is generated based on the first image mask region and the second image mask region. The initial coordinates of the heat sink area of ​​the casing and the dispensing device on the surface of the gallium nitride power transistor are obtained based on the coordinate system. Based on the initial coordinates, the actual distance between the dispensing device and the heat sink area of ​​the tube shell is measured by a height measuring needle. The initial coordinates of the dispensing device are compensated based on the actual distance and a preset spacing value to obtain the compensated coordinates of the dispensing device, so as to perform the dispensing operation based on the compensated coordinates.

2. The packaging method for gallium nitride power transistors according to claim 1, characterized in that, After performing the dispensing operation based on the compensated coordinates, the method further includes: The initial position and initial angle of the capacitor material are determined based on the coordinate system. The initial position and angle of the capacitor material are calibrated by calibrating the camera to obtain the latest position and angle. Based on the latest position and angle, the capacitor material is mounted by the bonding head.

3. The packaging method for gallium nitride power transistors according to claim 1, characterized in that, The step of preprocessing the surface image includes: The surface image is standardized to obtain a standardized image; The standardized image is then subjected to denoising and contrast enhancement processes sequentially to obtain the key image; Edge detection processing is performed on the key image using the Sobel algorithm to highlight the surface structure contour of the gallium nitride power transistor.

4. The packaging method for gallium nitride power transistors according to claim 1, characterized in that, The step of identifying the first image mask region and the second image mask region from the preprocessed image includes: The preprocessed image is binarized to extract the surface structure contour of the gallium nitride power transistor, and the overall chip contour of all the chips is identified from the surface structure contour. Based on the overall chip outline, the chips are sorted from top to bottom to determine the first and last chips. The first and last chips are proportionally divided, and corresponding binary masks are generated to mark the first image mask area and the second image mask area.

5. The packaging method for gallium nitride power transistors according to claim 1, characterized in that, The step of generating a coordinate system based on the first image mask region and the second image mask region includes: The line connecting the first image mask region and the second image mask region is taken as the X-axis, the midpoint between the first image mask region and the second image mask region is taken as the origin, and the straight line passing through the origin and perpendicular to the X-axis is taken as the Y-axis.

6. A packaging system for a gallium nitride power transistor, used to implement the packaging method for a gallium nitride power transistor as described in any one of claims 1-5, characterized in that, The system includes: A preprocessing module is used to acquire a surface image of a gallium nitride power transistor through a camera, preprocess the surface image to obtain a preprocessed image, wherein the surface of the gallium nitride power transistor is provided with multiple chips arranged in a vertical row; The recognition module is used to identify a first image mask region and a second image mask region from the preprocessed image, wherein the first image mask region is the upper part of the first chip and the second image mask region is the lower part of the last chip. The generation module is used to generate a coordinate system based on the first image mask area and the second image mask area, and to obtain the initial coordinates of the heat sink area of ​​the casing and the dispensing device on the surface of the gallium nitride power transistor based on the coordinate system; The compensation module is used to compensate the initial coordinates of the dispensing device based on the initial coordinates and by measuring the actual distance between the dispensing device and the heat sink area of ​​the tube shell using a height measuring needle. Based on the actual distance and a preset spacing value, the initial coordinates of the dispensing device are compensated to obtain the compensated coordinates of the dispensing device, so as to perform the dispensing operation based on the compensated coordinates.

7. The packaging system for gallium nitride power transistors according to claim 6, characterized in that, Following the compensation module, the system further includes: The determination module is used to determine the initial position and initial angle of the capacitor material based on the coordinate system. The mounting module is used to calibrate the initial position and initial angle of the capacitor material using a calibration camera to obtain the latest position and latest angle, and then perform a mounting operation on the capacitor material using a bonding head based on the latest position and latest angle.

8. The packaging system for gallium nitride power transistors according to claim 6, characterized in that, The preprocessing module includes: A standardization unit is used to standardize the surface image to obtain a standardized image. A denoising and enhancement unit is used to sequentially perform denoising and contrast enhancement processing on the standardized image to obtain a key image; An edge detection unit is used to perform edge detection processing on the key image using the Sobel algorithm to highlight the surface structure contour of the gallium nitride power transistor.

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