A semiconductor process by-product processing structure and semiconductor apparatus

Abstract

The application relates to the technical field of wafer processing equipment, in particular to a semiconductor process byproduct processing structure and semiconductor equipment, which comprises a first exhaust pipe, a processing bin, a second exhaust pipe and a gas conveying pipe. One end of the first exhaust pipe is communicated with a gas outlet hole of a reaction chamber, and the other end is connected to the top of the processing bin and communicated with the processing bin. A conveying hole is arranged through the side wall of the processing bin. The second exhaust pipe is fixedly arranged on the bottom plate of the processing bin and extends to the processing bin along the axial direction. The gas conveying pipe is arranged on the outer side wall of the processing bin and communicated with the conveying hole. The application enables the process gas and the cooling gas to be mixed and heat-exchanged in situ in the processing bin, actively controls the cooling and condensation process of the byproduct, and enables the solid particles after condensation to be thrown to the inner side wall of the processing bin under the centrifugal force of the spiral airflow and deposited and separated downward along the flow channel between the processing bin and the second exhaust pipe, and the central clean gas directly enters the second exhaust pipe and is discharged downward.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and more particularly to a semiconductor process byproduct processing structure and semiconductor equipment. Background Technology

[0002] Semiconductor etching machine exhaust gases contain reaction byproducts such as fluorides and chlorides, which exist in a gaseous state at high temperatures. After entering the pump tube, they easily condense into solid or semi-solid particles as the temperature drops and adhere to the tube wall, leading to poor exhaust of the dry pump, deterioration of vacuum, and even shutdown. Existing solutions such as nitrogen blowing, mechanical cleaning with scrapers, and low-temperature condensation chambers generally handle condensation and separation in separate steps, occupying additional space and lacking active control over the nucleation process. The separated particles are easily carried back into the dry pump by the airflow, and the purified gas is not recovered, making it difficult to meet the online continuous separation requirements of the direct connection pipeline from the etching chamber to the dry pump. Summary of the Invention

[0003] This invention relates to a semiconductor process byproduct treatment structure and semiconductor equipment, aiming to solve the problems of existing exhaust gas treatment solutions, such as separate condensation and separation, large space occupation, uncontrollable byproduct nucleation, and easy secondary entrainment of particles leading to dry pump blockage.

[0004] To achieve the above objectives, the present invention provides a semiconductor process byproduct processing structure, including a first exhaust pipe, a processing chamber, a second exhaust pipe, and a gas delivery pipe; One end of the first exhaust pipe is connected to the gas outlet of the reaction chamber, and the other end is connected to the top of the processing chamber and communicates with the processing chamber, so as to introduce the post-process gas carrying gaseous by-products into the processing chamber; the side wall of the processing chamber is provided with a conveying hole. The second exhaust pipe is fixedly inserted into the bottom plate of the processing chamber and its top end extends axially into the processing chamber. The outer diameter of the second exhaust pipe is smaller than the radial length of the inner cavity of the processing chamber, so as to form a flow channel between the inner side wall of the processing chamber and the outer side wall of the second exhaust pipe. The flow channel has an annular structure. The gas supply pipe is located on the outer wall of the processing chamber and is connected to the supply hole to supply cooling gas at a first temperature into the processing chamber. After the cooling gas enters the processing chamber tangentially through the supply hole, it forms a spiral airflow rotating around the central axis of the processing chamber. After mixing and exchanging heat with the process gas at a second temperature, the by-products in the process gas are cooled and condensed into solid particles. Under the centrifugal force of the spiral airflow, the solid particles move away from the central axis of the processing chamber and enter the flow channel. Meanwhile, the process gas near the central axis region of the processing chamber, after removing the by-products, enters the second exhaust pipe.

[0005] Optionally, the central axis of the conveying hole intersects the tangential direction of the inner cavity of the processing chamber at the air inlet end of the conveying hole and forms a non-perpendicular angle, so as to guide the cooling gas introduced into the processing chamber through the conveying hole to form a spiral airflow rotating around the central axis of the processing chamber.

[0006] Optionally, the central axis of the conveying hole intersects the tangent of the inner cavity of the processing chamber at the air inlet end of the conveying hole, and the projection of the central axis of the conveying hole onto the plane of the inner sidewall of the processing chamber forms an acute angle structure with the tangent, and the acute angle is 30° to 60°.

[0007] Optionally, the processing chamber includes a condensation section, a connecting section, and a collection section that are connected sequentially from top to bottom along the axial direction; Both the condensation section and the collection section extend axially, and the radial length of the inner cavity of the condensation section is less than the radial length of the inner cavity of the collection section. The connecting section is inclined, and the flow passage is located between the inner wall of the connecting section and the inner wall of the collection section and the outer wall of the second exhaust pipe.

[0008] Optionally, the semiconductor process byproduct processing structure further includes a heat insulation tube; The heat insulation pipe is located on the inner top wall of the processing chamber and extends downward along the axial direction. The heat insulation pipe is connected to the first exhaust pipe, and the outlet end of the heat insulation pipe is located below the outlet end of the conveying hole, so that the post-process gas conveyed by the first exhaust pipe mixes and exchanges heat with the spiral airflow.

[0009] Optionally, the semiconductor process by-product processing structure further includes a rotating tube, a support ring, and a spiral plate; The top end of the rotating tube is slidably in contact with the bottom end of the heat insulation tube, and the opposite ends are the first mating part and the second mating part. The first docking portion has a recessed support ring groove extending circumferentially in an annular structure; the support ring is fixed to the second docking portion and at least partially movably inserted into the support ring groove; the spiral plate is fixed to the inner wall of the rotating tube and extends downward along the axial direction, so that when the post-process gas moves downward, it pushes the spiral plate to make the rotating tube rotate relative to the heat insulation tube, thereby causing the post-process gas transported from the rotating tube to the processing chamber to rotate.

[0010] Optionally, the semiconductor process byproduct processing structure further includes a spiral guide channel; The spiral guide channel is arranged around the outside of the heat insulation tube and the rotating tube, and extends downward along the axial direction. The air inlet end of the spiral guide channel is connected to the air outlet end of the conveying hole, and the air outlet end of the spiral guide channel faces the air outlet end of the rotating tube.

[0011] Optionally, the semiconductor process byproduct processing structure further includes a filter screen; The filter screen is fixed around the outer wall of the second exhaust pipe, and its free end is fixed to the inner wall of the collection part, so as to divide the flow channel into a separation channel and a buffer channel, so that the solid particles are deposited on the side of the filter screen facing the separation channel.

[0012] Optionally, the side wall of the second exhaust pipe is provided with an air extraction hole that communicates with the buffer channel, so that the mixed gas entering the flow channel passes through the filter screen and the air extraction hole into the second exhaust pipe.

[0013] Optionally, the semiconductor process byproduct processing structure further includes a temperature control device and a control module; The temperature control is located on the gas supply pipe; The temperature control device and the cooling gas source connected to the gas supply pipe are both connected to the control module. The control module adjusts the first temperature and gas supply volume of the cooling gas delivered to the processing chamber by controlling the temperature control device and the cooling gas source.

[0014] To achieve the above objectives, the present invention also provides a semiconductor device, including a reaction chamber, a suction system, a cooling gas source, and a semiconductor process by-product processing structure, wherein a first exhaust pipe in the semiconductor process by-product processing structure is connected to the reaction chamber, a second exhaust pipe in the semiconductor process by-product processing structure is connected to the suction system, and a gas delivery pipe in the semiconductor process by-product processing structure is connected to the cooling gas source.

[0015] The beneficial effects of this invention are as follows: This invention introduces the high-temperature post-processing gas directly into the processing chamber through the first exhaust pipe, and uses the tangential flow of cooling gas through the gas supply pipe to form a spiral airflow, so that the post-processing gas and the cooling gas mix and exchange heat in situ within the processing chamber. The cooling and condensation process of the by-products is actively controlled. The condensed solid particles are thrown towards the inner wall of the processing chamber by the centrifugal force of the spiral airflow, and are deposited and separated downward along the flow channel between the processing chamber and the second exhaust pipe. The central clean gas directly enters the second exhaust pipe and is discharged downward. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the semiconductor process by-product processing structure in some embodiments of the present invention; Figure 2 for Figure 1 The diagram shows the structure of the gas pipeline and processing chamber. Figure 3 for Figure 1The diagram shows the structure of the heat insulation pipe and the rotating pipe. Figure 4 for Figure 3 An enlarged schematic diagram of the structure at position A in the diagram.

[0017] Explanation of reference numerals in the attached figures: 1. First exhaust pipe; 2. Insulation pipe; 21. Support ring groove; 3. Processing chamber; 31. Condensation section; 311. Conveying hole; 32. Connecting part; 33. Collection part; 4. Gas delivery pipe; 5. Temperature control unit; 6. Control module; 7. Spiral guide channel; 8. Second exhaust pipe; 81. Air extraction hole; 9. Filter screen; 10. Rotating pipe; 11. Spiral plate; 12. Support ring component. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0019] This invention relates to a semiconductor process byproduct treatment structure and semiconductor equipment, aiming to solve the problems of existing exhaust gas treatment solutions, such as separate condensation and separation, large space occupation, uncontrollable byproduct nucleation, and easy secondary entrainment of particles leading to dry pump blockage.

[0020] To address the problems existing in the prior art, embodiments of the present invention provide a semiconductor process byproduct processing structure, such as... Figure 1 As shown, the semiconductor process by-product processing structure includes a first exhaust pipe 1, a processing chamber 3, a second exhaust pipe 8, and a gas delivery pipe 4; the central axes of the first exhaust pipe 1 and the second exhaust pipe 8 are arranged on the same vertical line. The inner cavity of the processing chamber 3 has a columnar structure.

[0021] In some embodiments, such as Figure 1 As shown, one end (which can be understood as the upper end) of the first exhaust pipe 1 is connected to the gas outlet of the reaction chamber, and the other end (which can be understood as the lower end) is connected to the top of the processing chamber 3 and communicates with the processing chamber 3, so as to introduce the post-process gas carrying gaseous by-products into the processing chamber 3; the side wall of the processing chamber 3 is provided with a conveying hole 311. In some embodiments, such as Figure 1 As shown, the second exhaust pipe 8 is fixedly inserted into the bottom plate of the processing chamber 3 and its top end extends axially into the processing chamber 3. The outer diameter of the second exhaust pipe 8 is smaller than the radial length of the inner cavity of the processing chamber 3, so as to form a flow channel between the inner side wall of the processing chamber 3 and the outer side wall of the second exhaust pipe 8. The flow channel has an annular structure.

[0022] In some embodiments, such as Figure 1 As shown, the gas supply pipe 4 is located on the outer wall of the processing chamber 3 and is connected to the supply hole 311 to supply cooling gas at a first temperature into the processing chamber 3. After the cooling gas enters the processing chamber 3 tangentially through the supply hole 311, it forms a spiral airflow rotating around the central axis of the processing chamber 3. After mixing and exchanging heat with the supplied post-process gas at a second temperature, the by-products in the post-process gas are cooled and condensed into solid particles. Under the centrifugal force of the spiral airflow, the solid particles move away from the central axis of the processing chamber 3 and enter the flow channel. Meanwhile, the post-process gas near the central axis region of the processing chamber 3, after removing the by-products, enters the second exhaust pipe 8.

[0023] It is worth noting that the first temperature is lower than the second temperature.

[0024] This configuration directly couples the tangential intake of the cooling gas with the swirling flow field. On one hand, as the cooling gas spirals into the inner wall of the processing chamber 3, it can form a continuous and uniform shear mixing with the high-temperature post-processing gas falling from the top of the processing chamber 3. This avoids the problem of large differences in condensation particle size and easy agglomeration and wall adhesion caused by uneven local heat exchange, and actively controls the nucleation and condensation process of by-products, making the solid particles more uniformly generated. On the other hand, the centrifugal force field generated by the swirling flow naturally realizes the stratified flow field of the processing chamber 3, where "dust is collected on the side walls and gas is discharged from the center". The condensed solid particles are continuously thrown towards the inner wall of the processing chamber 3 and flow downstream into the annular flow channel to settle. The clean gas is always constrained in the central low-pressure area and stably flows into the second exhaust pipe 8. This not only avoids the separated solid particles being entrained again by the central airflow, but also eliminates the need for additional baffles, electric fields and other separation components. The three steps of mixing, heat exchange, condensation and separation are completed simultaneously in the same processing chamber 3. The structure is simple and the flow field is stable, which greatly reduces the risk of pipeline blockage.

[0025] In some embodiments, such as Figure 2 As shown, the central axis of the conveying hole 311 intersects the tangential direction of the inner cavity of the processing chamber 3 at the air inlet end of the conveying hole 311 and forms a non-perpendicular angle, so as to guide the cooling gas introduced into the processing chamber 3 through the conveying hole 311 to form a spiral airflow rotating around the central axis of the processing chamber 3.

[0026] By limiting the angle between the central axis of the conveying hole 311 and the tangential direction of the inner wall of the processing chamber 3, the cooling gas is injected tangentially along the inner wall of the processing chamber 3 instead of rushing radially. The incident momentum is converted into a circumferential velocity around the central axis of the processing chamber 3, which can quickly and self-excite to form a stable, low-disturbance spiral airflow. This avoids the central turbulence caused by vertical air intake breaking through the swirling field and causing the condensed and fixed particles to be rolled back to the central area of ​​the processing chamber 3. Furthermore, the swirling number can be controlled by adjusting the angle to enhance the centrifugal separation intensity without excessively increasing the pressure loss, allowing solid particles to be more reliably thrown into the flow channel.

[0027] In some embodiments, such as Figure 2 As shown, the central axis of the conveying hole 311 intersects the tangent of the inner cavity of the processing chamber 3 at the air inlet end of the conveying hole 311. The projection of the central axis of the conveying hole 311 onto the plane of the inner sidewall of the processing chamber 3 forms an acute angle with the tangent, and the acute angle is 30° to 60°.

[0028] The incident angle of the conveying orifice 311 is further quantified into an acute angle of 30°~60° under the projection of the tangent of the inner wall of the processing chamber 3, which is an engineering implementation of the previous "non-perpendicular angle". This angle range can ensure that the cooling gas obtains a sufficient tangential component to generate a stable spiral airflow (if the angle is too small, the number of swirls will be insufficient, the centrifugal force will be weak, and the particles will be difficult to throw to the side wall; if the angle is too large, close to 90°, the tangential velocity will decrease, the axial penetration will be strong, and it will be easy to damage the central clean gas column and cause secondary entrainment of turbulence). At the same time, the pressure loss of the swirling flow can be controlled within the range that the front stage of the subsequent vacuum pump can withstand. Meanwhile, the wall-attached jet of 30°~60° forms a continuous rotating airflow in the processing chamber 3, which takes into account the balance of swirling intensity, flow field stability, separation efficiency and anti-coking adhesion. This ensures that the three-step coordination of by-product condensation, centrifugal sedimentation and central exhaust has a reproducible design margin under different operating conditions.

[0029] In some embodiments, such as Figure 1 As shown, the processing chamber 3 includes a condensation section 31, a connecting section 32, and a collection section 33 that are connected sequentially from top to bottom along the axial direction; the condensation section 31 has an inverted cylindrical structure. The connecting section 32 has a tubular structure. The collection section 33 has a cylindrical structure.

[0030] In some embodiments, such as Figure 1 As shown, both the condensation section 31 and the collection section 33 extend axially, and the radial length of the inner cavity of the condensation section 31 is smaller than the radial length of the inner cavity of the collection section 33. The connecting section 32 is inclined, and the radial cross-sectional area of ​​the connecting section 32 increases from top to bottom.

[0031] In some embodiments, such as Figure 1As shown, the flow channel is located between the inner wall of the connecting part 32, the inner wall of the collecting part 33, and the outer wall of the second exhaust pipe 8.

[0032] This design, with its stepped cavity structure that is smaller at the top and larger at the bottom, allows the condensation section 31 to maintain a smaller radial length to compress the flow channel cross-section and increase the axial velocity. This enables the high-temperature post-process gas and the spiral airflow to mix thoroughly in the condensation section and complete rapid heat exchange and condensation. Subsequently, the post-process gas enters the expanded-diameter collection section 33, where the flow velocity naturally decreases. This, combined with the inclined connecting section 32, forms a "gradually expanding and slow-flow zone." This not only prevents the separated solid particles from being re-rolled up due to excessive flow velocity but also provides a smooth sliding surface for the centrifugally ejected solid particles, allowing them to fall stably along the inclined wall into the annular flow channel formed by the connecting section 32 and the collection section 33, thus achieving spatial partitioning for condensation, slow-flow sedimentation, and side-wall collection.

[0033] In some embodiments, such as Figure 1 As shown, the semiconductor process by-product processing structure also includes a heat insulation tube 2; the outer diameter of the heat insulation tube 2 is smaller than the radial length of the inner cavity of the condensation section 31. The heat insulation tube 2 is preferably made of polytetrafluoroethylene, ceramic, or a high-temperature resistant alloy with a ceramic coating, so as to block the heat of the high-temperature (second temperature) process gas from being transferred to the top wall and inner cavity of the processing chamber 3.

[0034] In some embodiments, such as Figure 1 As shown, the heat insulation tube 2 is located on the inner top wall of the processing chamber 3 and extends downward along the axial direction. The axial height of the heat insulation tube 2 is less than the axial height of the inner cavity of the condensation section 31. This arrangement ensures that the heat insulation tube 2 only covers the upper high-temperature gas inlet area of ​​the condensation section 31. This avoids coking at the top through short-time stream flow, locks the mixing and exchange point in the stable section of the spiral airflow, and leaves an axial gap at the bottom of the heat insulation tube 2. This allows the gas after the central high-temperature process to be immediately captured and drawn into the swirling flow field by the outer spiral airflow after exiting the heat insulation tube 2. The heat insulation tube 2 will not obstruct the downward swirling flow of the inner wall of the condensation section 31 or occupy the space for solid particles to migrate to the flow channel due to excessive length.

[0035] In some embodiments, such as Figure 1 As shown, the heat insulation pipe 2 is connected to the first exhaust pipe 1 and is coaxial with the first exhaust pipe 1; the outlet end of the heat insulation pipe 2 is located below the outlet end of the conveying hole 311 so that the process gas conveyed by the first exhaust pipe 1 mixes and exchanges heat with the spiral airflow.

[0036] This configuration allows the heat insulation pipe 2 to "shield" the high-temperature post-process gas from the first exhaust pipe 1 and send it downwards in a "shielded" manner in the central area until it is released below the gas outlet of the conveying hole 311. This ensures that the high-temperature gas will not come into premature contact with the inner wall of the condensation section 31 or the cooling gas before reaching the designed heat exchange surface, thus preventing coking at the top. At the same time, the mixing and heat exchange point is precisely anchored in the section of the condensation section 31 where the spiral airflow has fully developed and the tangential velocity is stable. This allows the two airflows to undergo controllable shear mixing and rapid heat exchange at this point, resulting in concentrated nucleation and condensation of by-products with uniform particle size. After the high-temperature post-process gas from the central stream exits the heat insulation pipe 2, it is enveloped by the outer spiral airflow and is naturally drawn into the swirling flow field and migrates towards the inner wall of the processing chamber 3.

[0037] In some embodiments, such as Figure 3 and Figure 4 As shown, the semiconductor process by-product processing structure further includes a rotating tube 10, a supporting ring 12, and a spiral plate 11; the rotating tube 10 is coaxially arranged with the heat insulation tube 2 and has the same dimensions. The supporting ring 12 has a ring-shaped structure.

[0038] In some embodiments, such as Figure 3 and Figure 4 As shown, the top end of the rotating tube 10 is slidably in contact with the bottom end of the heat insulation tube 2, and the opposite ends are the first mating part and the second mating part.

[0039] In some embodiments, such as Figure 3 and Figure 4 As shown, the first docking portion has a recessed support ring groove 21 extending circumferentially in an annular structure; the support ring 12 is fixed to the second docking portion and at least partially movably inserted into the support ring groove 21; the spiral plate 11 is fixed to the inner wall of the rotating tube 10 and extends downward axially, so that when the post-process gas moves downward, it pushes the spiral plate 11 to rotate the rotating tube 10 relative to the heat insulation tube 2, thereby causing the post-process gas transported from the rotating tube 10 to the processing chamber 3 to rotate. The axial height of the spiral plate 11 is less than or equal to the axial height of the rotating tube 10.

[0040] By connecting the support ring groove 21 and the support ring 12 in a circumferential manner, the heat insulation tube 2 and the rotating tube 10 are axially limited and rotate relative to each other, while a closed gas channel is naturally formed to prevent high-temperature gas from leaking out of the gas channel through the gap and causing coking at the top. The spiral plate 11 is pushed by the downward-flowing post-process gas, which drives the rotating tube 10 to rotate around the central axis of the heat insulation tube 2. This is equivalent to having a "non-powered vortex generator" built into the airflow. It can apply additional circumferential rotational momentum to the post-process gas without external drive, so that it is aligned with the direction of the surrounding cooling vortex flow field. This makes the shear mixing of the two gases more gentle and thorough, the nucleation of by-products more uniform, and further enhances the overall vortex intensity of the entire flow field. This allows the condensed solid particles to be centrifugally thrown into the flow channel more quickly and stably, reducing turbulence and secondary entrainment.

[0041] It is worth noting that the rotational speed of the spiral airflow is matched in the same direction as the rotational speed of the processed gas, which significantly reduces the circumferential velocity difference between the hot and cold airflows. This results in gentler shear disturbances during mixing, preventing strong shear forces from breaking up the already formed condensed particles and avoiding the disruption of the central clean gas column caused by reverse eddies. Simultaneously, the co-directional rotation effectively extends the residence path of the gas within the processing chamber 3, providing more sufficient nucleation and condensation time for byproducts. This simultaneously improves condensation uniformity and centrifugal separation efficiency without excessively increasing pressure loss. Furthermore, in other embodiments, the rotational speed of the processed gas can be lower than the rotational speed of the spiral airflow.

[0042] In some embodiments, such as Figure 3 and Figure 4 As shown, the support ring 12 is fixed to the top of the rotating tube 10. The support ring groove 21 is formed at the bottom of the heat insulation tube 2.

[0043] In some embodiments, such as Figure 1 As shown, the semiconductor process by-product processing structure also includes a spiral guide channel 7.

[0044] In some embodiments, such as Figure 1 As shown, the spiral guide channel 7 is arranged around the outside of the heat insulation pipe 2 and the rotating pipe 10, and extends downward along the axial direction. The air inlet end of the spiral guide channel 7 is connected to the air outlet end of the conveying hole 311, and the air outlet end of the spiral guide channel 7 faces the air outlet end of the rotating pipe 10.

[0045] This configuration provides a continuous circumferential guide path for the cooling gas through the spiral guide channel 7, allowing it to continue its stable downward flow along a fixed spiral trajectory after exiting the conveying hole 311. This prevents the cooling gas from diffusing and stalling at the inner wall of the processing chamber 3 or from prematurely mixing with the turbulent flow of the gas after the central high-temperature process. It ensures that the spiral airflow maintains structural integrity and uniform tangential velocity from the inlet end of the spiral guide channel 7 to the outlet end of the rotating tube 10, providing a continuous and stable swirling field foundation for the subsequent superposition of hot and cold airflows in the same direction and the centrifugal separation of by-products.

[0046] In some embodiments, the spiral guide channel 7 may be a spiral guide tube or a plurality of baffles capable of generating a spiral airflow. It should be noted that the material of both the spiral guide tube and the baffles is the same as that of the heat insulation tube 2.

[0047] In some embodiments, such as Figure 1 As shown, the semiconductor process by-product processing structure also includes a filter screen 9; the filter screen 9 is preferably a conical or cylindrical metal mesh that surrounds the periphery.

[0048] In some embodiments, such as Figure 1 As shown, the filter screen 9 is fixed around the outer side wall of the second exhaust pipe 8, and its free end is fixed to the inner side wall of the collection part 33, so as to divide the flow channel into a separation channel and a buffer channel, so that the solid particles are deposited on the side of the filter screen 9 facing the separation channel.

[0049] This setup uses a filter screen 9 to divide the annular flow channel into an upper separation channel and a lower buffer channel. The solid particles thrown in by centrifugation directly hit the top of the filter screen 9 and slide down the wall to deposit, without being re-entrained by the return gas flowing from the central area to the second exhaust pipe 8.

[0050] In some embodiments, such as Figure 1 As shown, an air extraction hole 81 communicating with the buffer channel is provided through the side wall of the second exhaust pipe 8, so that the mixed gas entering the flow channel passes through the filter screen 9 and the air extraction hole 81 and enters the second exhaust pipe 8.

[0051] An extraction hole 81 is opened on the side wall of the second exhaust pipe 8 to connect the buffer channel. This allows the clean mixed gas that has entered the flow channel and been intercepted by the filter screen 9 to directly pass through the filter screen 9 and the extraction hole 81 back to the second exhaust pipe 8. This eliminates the need for back mixing against the outer swirling flow, which shortens the exhaust path, reduces flow resistance, and forms a one-way permeable barrier with the help of the filter screen 9. This ensures that the solid particles remain on the separation channel side and are not drawn back, achieving a steady-state flow separation of "solid collection on the side wall and extraction from the center".

[0052] In some embodiments, such as Figure 1As shown, the semiconductor process by-product processing structure also includes a temperature control unit 5 and a control module 6.

[0053] In some embodiments, such as Figure 1 As shown, the temperature control device 5 is located on the gas supply pipe 4; the specific structure of the temperature control device 5 can be an integrated electric heater, a proportional regulating valve or a heat exchange coil, which can adjust the temperature of the cooling gas flowing through the gas supply pipe 4 online.

[0054] In some embodiments, such as Figure 1 As shown, the temperature control device 5 and the cooling gas source connected to the gas supply pipe 4 are both connected to the control module 6. The control module 6 adjusts the first temperature and gas supply volume of the cooling gas delivered to the processing chamber 3 by controlling the temperature control device 5 and the cooling gas source.

[0055] By linking the temperature control unit 5 with the cooling gas source through the control module 6, the first temperature and gas delivery volume of the cooling gas are dynamically adjusted according to the real-time temperature, flow rate and by-product type of the gas after the process. This ensures that the temperature after mixing and heat exchange in the processing chamber 3 always falls within the optimal condensation window of the by-products, avoiding coking on the inner wall of the processing chamber 3 due to overcooling or incomplete condensation of solid particles due to overheating. At the same time, the gas volume is matched according to the requirements of the swirling flow field to maintain a stable spiral strength, realizing adaptive online control under different etching formulas. This allows for both separation efficiency and anti-clogging stability without stopping the machine to change parts.

[0056] In some embodiments, the control module 6 can be a PLC or embedded controller with an integrated process formula database, and has a built-in target condensation temperature range and swirling gas volume mapping table corresponding to different etching gases. By receiving process step signals from the reaction chamber and temperature and flow feedback from the gas supply pipe 4, it automatically outputs control commands to adjust the heating power of the temperature control 5 and the opening degree of the cooling gas source, so as to achieve adaptive matching of parameters when switching between different process formulas, and maintain a stable by-product condensation and separation effect without manual intervention.

[0057] In some embodiments, the materials of the heat insulation tube 2 and the rotating tube 10 are the same, which will not be described in detail here.

[0058] To address the problems existing in the prior art, embodiments of the present invention also provide a semiconductor device, the semiconductor device including a reaction chamber, a suction system (vacuum pump), a cooling gas source and the semiconductor process by-product processing structure, wherein a first exhaust pipe 1 in the semiconductor process by-product processing structure is connected to the reaction chamber, a second exhaust pipe 8 in the semiconductor process by-product processing structure is connected to the suction system, and a gas delivery pipe 4 in the semiconductor process by-product processing structure is connected to the cooling gas source.

[0059] In some embodiments, the semiconductor equipment can be wafer processing equipment such as etching equipment, deposition equipment, and resist stripping equipment. The exhaust gas discharged from such process chambers generally contains easily condensable byproducts such as fluorides, chlorides, and silicon-based compounds. The processing structure of this invention is adapted to the cyclone condensation and centrifugal separation capabilities of gaseous byproducts and can be directly connected in series on the pipeline between the process chamber outlet and the dry pump, providing a universal online anti-clogging and purification solution for different process scenarios without the need to design a separate exhaust gas treatment unit for a single device.

[0060] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A semiconductor process byproduct processing structure, characterized in that, It includes a first exhaust pipe, a processing chamber, a second exhaust pipe, and an air supply pipe; One end of the first exhaust pipe is connected to the gas outlet of the reaction chamber, and the other end is connected to the top of the processing chamber and communicates with the processing chamber, so as to introduce the post-process gas carrying gaseous by-products into the processing chamber; the side wall of the processing chamber is provided with a conveying hole. The second exhaust pipe is fixedly inserted into the bottom plate of the processing chamber and its top end extends axially into the processing chamber. The outer diameter of the second exhaust pipe is smaller than the radial length of the inner cavity of the processing chamber, so as to form a flow channel between the inner side wall of the processing chamber and the outer side wall of the second exhaust pipe. The flow channel has an annular structure. The gas supply pipe is located on the outer wall of the processing chamber and is connected to the supply hole to supply cooling gas at a first temperature into the processing chamber. After the cooling gas enters the processing chamber tangentially through the supply hole, it forms a spiral airflow rotating around the central axis of the processing chamber. After mixing and exchanging heat with the process gas at a second temperature, the by-products in the process gas are cooled and condensed into solid particles. Under the centrifugal force of the spiral airflow, the solid particles move away from the central axis of the processing chamber and enter the flow channel. Meanwhile, the process gas near the central axis region of the processing chamber, after removing the by-products, enters the second exhaust pipe.

2. The semiconductor process by-product processing structure according to claim 1, characterized in that, The central axis of the conveying hole intersects the tangential direction of the inner cavity of the processing chamber at the air inlet end of the conveying hole and forms a non-perpendicular angle, so as to guide the cooling gas introduced into the processing chamber through the conveying hole to form a spiral airflow rotating around the central axis of the processing chamber.

3. The semiconductor process by-product processing structure according to claim 2, characterized in that, The central axis of the conveying hole intersects the tangent of the inner cavity of the processing chamber at the air inlet end of the conveying hole. The projection of the central axis of the conveying hole onto the plane of the inner sidewall of the processing chamber forms an acute angle with the tangent, and the acute angle is 30° to 60°.

4. The semiconductor process by-product processing structure according to claim 1, characterized in that, The processing chamber includes a condensation section, a connecting section, and a collection section that are connected sequentially from top to bottom along the axial direction; Both the condensation section and the collection section extend axially, and the radial length of the inner cavity of the condensation section is less than the radial length of the inner cavity of the collection section. The connecting section is inclined, and the flow passage is located between the inner wall of the connecting section and the inner wall of the collection section and the outer wall of the second exhaust pipe.

5. The semiconductor process by-product processing structure according to claim 4, characterized in that, It also includes heat insulation pipes; The heat insulation pipe is located on the inner top wall of the processing chamber and extends downward along the axial direction. The heat insulation pipe is connected to the first exhaust pipe, and the outlet end of the heat insulation pipe is located below the outlet end of the conveying hole, so that the post-process gas conveyed by the first exhaust pipe mixes and exchanges heat with the spiral airflow.

6. The semiconductor process by-product processing structure according to claim 5, characterized in that, It also includes a rotating tube, a support ring, and a spiral plate; The top end of the rotating tube is slidably in contact with the bottom end of the heat insulation tube, and the opposite ends are the first mating part and the second mating part. The first docking portion has a recessed support ring groove extending circumferentially in an annular structure; the support ring is fixed to the second docking portion and at least partially movably inserted into the support ring groove; the spiral plate is fixed to the inner wall of the rotating tube and extends downward along the axial direction, so that when the post-process gas moves downward, it pushes the spiral plate to make the rotating tube rotate relative to the heat insulation tube, thereby causing the post-process gas transported from the rotating tube to the processing chamber to rotate.

7. The semiconductor process by-product processing structure according to claim 6, characterized in that, It also includes spiral guide channels; The spiral guide channel is arranged around the outside of the heat insulation tube and the rotating tube, and extends downward along the axial direction. The air inlet end of the spiral guide channel is connected to the air outlet end of the conveying hole, and the air outlet end of the spiral guide channel faces the air outlet end of the rotating tube.

8. The semiconductor process by-product processing structure according to claim 4, characterized in that, It also includes a filter screen; The filter screen is fixed around the outer wall of the second exhaust pipe, and its free end is fixed to the inner wall of the collection part, so as to divide the flow channel into a separation channel and a buffer channel, so that the solid particles are deposited on the side of the filter screen facing the separation channel.

9. The semiconductor process by-product processing structure according to claim 8, characterized in that, The second exhaust pipe has a through-hole on its side wall that communicates with the buffer channel, so that the mixed gas entering the flow channel passes through the filter screen and the through-hole into the second exhaust pipe.

10. The semiconductor process by-product processing structure according to claim 1, characterized in that, It also includes temperature control and control module; The temperature control is located on the gas supply pipe; The temperature control device and the cooling gas source connected to the gas supply pipe are both connected to the control module. The control module adjusts the first temperature and gas supply volume of the cooling gas delivered to the processing chamber by controlling the temperature control device and the cooling gas source.

11. A semiconductor device, characterized in that, The device includes a reaction chamber, a suction system, a cooling gas source, and a semiconductor process by-product processing structure as described in any one of claims 1 to 10. A first exhaust pipe in the semiconductor process by-product processing structure is connected to the reaction chamber, a second exhaust pipe in the semiconductor process by-product processing structure is connected to the suction system, and a gas delivery pipe in the semiconductor process by-product processing structure is connected to the cooling gas source.

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