A process chamber and semiconductor apparatus

Abstract

This application discloses a process chamber and semiconductor equipment, relating to the field of semiconductor equipment technology. The process chamber includes a cavity, a cover plate assembly, a first bushing, and a second bushing. The cover plate assembly is disposed on the top of the cavity. The first bushing is disposed on the lower side of the cover plate assembly and connected to the cover plate assembly. The first bushing has one or more protrusions. The second bushing is disposed in the cavity and has one or more grooves adapted to the one or more protrusions, so that the first bushing and the second bushing form a mutually fitting relationship. Compared with simple end face contact, this fitting relationship can enhance the barrier capability at the connection position of the first bushing and the second bushing, improve the problem of insufficient barrier capability at the connection position of adjacent bushings, which leads to the easy diffusion of reaction gases and by-products into the cover plate assembly and the cavity, and solve the problem of difficulty in aligning adjacent bushings when the cover plate assembly is closed.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, and in particular to a process chamber and semiconductor equipment. Background Technology

[0002] In semiconductor manufacturing, reactive gases are typically delivered to the wafer surface through a process chamber to perform processing on the wafer.

[0003] In the process chamber, the cover plate assembly is located at the top of the chamber, and process kits such as bushings are usually installed inside the chamber to reduce the impact of reaction gases and byproducts on the chamber.

[0004] However, the existing process chambers have insufficient barrier capabilities between the bushing and cover plate assemblies, as well as at the connection points between adjacent bushings. Reactant gases and byproducts can easily diffuse into the cover plate assembly and the chamber through these connection points. Summary of the Invention

[0005] This application discloses a process chamber and semiconductor equipment that can improve the problem of insufficient barrier capability between the bushing and cover plate assembly, as well as the connection position of adjacent bushings, which leads to the easy diffusion of reaction gases and by-products into the cover plate assembly and the chamber, and can solve the problem of difficulty in aligning adjacent bushings when the cover plate assembly is closed.

[0006] In a first aspect, this application provides a process chamber, including a chamber body, a cover plate assembly, a first bushing, and a second bushing; The cover assembly is located at the top of the cavity; The cover plate assembly has an annular first mating surface on its lower side and an annular second mating surface on its upper side. The first bushing is located on the lower side of the cover plate assembly and connected to the cover plate assembly so that the first mating surface fits into the second mating surface. The first bushing has one or more protrusions. The second bushing is disposed in the cavity, and the second bushing has one or more grooves that are adapted to one or more protrusions.

[0007] In this embodiment, the cover plate assembly has an annular first mating surface on its lower side and the first bushing has an annular second mating surface on its upper side. The first bushing is located on the lower side of the cover plate assembly and connected to the cover plate assembly so that the first mating surface fits against the second mating surface. This allows the first bushing to form an isolation and protection on the side of the cover plate assembly facing the interior of the cavity, reducing the direct diffusion of reactive gases and byproducts to the vicinity of the cover plate assembly. At the same time, the protrusion of the first bushing matches the groove of the second bushing, forming a mutually fitting relationship between the first bushing and the second bushing. Compared to simple end-face contact, this fitting relationship enhances the barrier capability at the connection point between the first bushing and the second bushing, making it less likely for reactive gases and byproducts to flow through this connection point to the cover plate assembly and the cavity. This reduces the risk of corrosion or deposition contamination of the cover plate assembly and the cavity, increases the service life of the process chamber, and helps maintain the stability of the process. Furthermore, the fact that the protrusion of the first bushing matches the groove of the second bushing can solve the problem that the first bushing and the second bushing are difficult to align when the cover plate assembly is closed after the first bushing is connected to the cover plate assembly.

[0008] In one possible implementation, the process chamber further includes a shower head, and the cover assembly includes a cover plate and an isolation ring, with the cover plate mounted on the top of the chamber, the shower head mounted on the cover plate, and the isolation ring located between the shower head and the cover plate. The lower side of the isolation ring is provided with a first mating surface, and the first bushing is connected to the isolation ring by a vacuum screw.

[0009] In this embodiment, the isolation ring and the first bushing are connected by vacuum screws, and a stable connection is formed by the fit of the first mating surface and the second mating surface. This helps to reduce the assembly gap between the isolation ring and the first bushing, making the protective structure on the lower side of the cover plate assembly more stable, thereby reducing the leakage of reaction gases and by-products through the gap between the isolation ring and the first bushing.

[0010] In one possible implementation, the isolation ring has an extension extending to the underside of the first bushing, the extension covering the gap between the second mating surface and the first mating surface.

[0011] In this embodiment, the extension can shield the gap between the first mating surface and the second mating surface, so that the reactant gas and byproducts need to bypass the extension before reaching the gap, thereby further reducing the possibility of the gas diffusing to the vicinity of the cover plate assembly through the gap.

[0012] In one possible implementation, the protrusion and the groove are interference-fitted.

[0013] In this embodiment, the interference fit between the protrusion and the groove can create a connection with a small gap or virtually no gap at the joint, thereby enhancing the barrier capability at the connection point between the first bushing and the second bushing and further reducing the leakage of reactive gases and byproducts through this connection point.

[0014] In one possible implementation, the lower side of the first bushing is provided with a first abutting surface, which is located on the side of one or more protrusions near the cavity, and the upper side of the second bushing is provided with a second abutting surface, which is located on the side of one or more grooves near the cavity. The protrusion and the groove are fitted together with a clearance, and the second abutting surface abuts against the first abutting surface.

[0015] In this embodiment, the protrusion and the groove are fitted together to guide the assembly and limit the position. The first abutting surface and the second abutting surface abut on the side close to the cavity, so that when the gas diffuses from the mating area between the protrusion and the groove toward the side wall of the cavity, it also needs to pass through the abutting position of the first abutting surface and the second abutting surface, thereby extending the path of the gas to diffuse outward, taking into account both assembly convenience and leakage prevention effect.

[0016] In one possible implementation, a third bushing is also included; The third bushing is located inside the cavity and mates with the second bushing. The lower side of the second bushing is provided with a third abutment surface that is opposite to the first abutment surface along the axial direction of the process cavity. The third bushing is provided with a fourth abutment surface that abuts against the third abutment surface, so as to clamp the second bushing together with the first abutment surface along the axial direction of the process cavity.

[0017] In this embodiment, the first bushing and the third bushing can jointly limit and clamp the second bushing along the axial direction of the process chamber, making the position of the second bushing in the chamber more stable and reducing the possibility of changes in the gap at the connection position due to assembly gaps or airflow disturbances, thereby improving the barrier stability of the bushing connection position.

[0018] In one possible implementation, a first channel is formed between the inner walls of the second bushing and the third bushing, the cavity is provided with an exhaust port, and the outlet of the first channel is connected to the exhaust port. The inner wall of the second bushing facing the first channel is sandblasted. And / or, the inner wall of the third bushing facing the first channel is sandblasted.

[0019] In this embodiment, the first channel can guide the reaction gas and by-products to flow to the exhaust port. After the inner wall of the second and / or third bushings facing the first channel is set as a sandblasted surface, it can enhance the adhesion of deposits, making it easier for the reaction gas and by-products to adhere to the bushing surface and less likely to fall off, thereby reducing the risk of contaminants adhering to the cavity.

[0020] In one possible implementation, a fourth bushing is also included. The fourth bushing is disposed within the first channel and separates the first channel. The fourth bushing is provided with a plurality of air equalization holes. The number of air equalization holes on the side of the fourth bushing closer to the exhaust port is less than the number of air equalization holes on the side farther from the exhaust port.

[0021] In this embodiment, the fourth bushing can divide the first channel into different flow regions and connect the different flow regions through air distribution holes. The side closer to the exhaust port can be the half-region of the fourth bushing circumferentially adjacent to the exhaust port, and the side farther from the exhaust port can be the other half-region opposite to this half-region. Since the suction effect on the side closer to the exhaust port is generally stronger than that on the side farther from the exhaust port, by reducing the number of air distribution holes on the side closer to the exhaust port, the suction differences in different directions within the first channel can be balanced, improving airflow uniformity.

[0022] In one possible implementation, a fifth bushing and a sixth bushing are also included; The fifth bushing is located inside the cavity. The fifth bushing has a second channel, the axis of which is parallel to the axis of the process chamber. The second channel is connected to the exhaust port. The fifth bushing has a first step on its outer side. The sixth bushing is located inside the cavity. The sixth bushing has a third channel, the axis of which is perpendicular to the axis of the process chamber. The third channel connects the first channel and the second channel. The inlet end of the sixth bushing has a first connecting part, and the outlet end of the sixth bushing has a first embedding part. The first connecting part is located inside the first channel and abuts against the inner wall of the third bushing. The first embedding part is perpendicular to the axis of the third channel. The first embedding part is adapted to the first step part and abuts against the first step part and the side wall of the cavity.

[0023] In this embodiment, the third channel connects the first and second channels, allowing gas to flow from the first channel into the second channel via the third channel and further discharge to the exhaust port. Simultaneously, the first connecting part abuts against the inner wall of the third bushing, and the first embedded part adapts to and abuts against the first stepped part between the first stepped part and the cavity sidewall. This forms a bent mating interface between the sixth bushing and adjacent components, extending the path of gas diffusion along the mating gap towards the cavity sidewall, thereby effectively reducing the possibility of gas overflow and contaminating the cavity sidewall.

[0024] In one possible implementation, the sixth bushing includes: The first sub-shear has a first connecting portion and a second insert portion extending toward the fifth bushing; The second sub-shoulder is fitted onto the first sub-shoulder. The second sub-shoulder has a second stepped portion adapted to the second embedded portion, a second tube portion extending toward the fifth bushing, and a third stepped portion formed on the outside of the second tube portion. The second stepped portion abuts against the side wall of the cavity between the second embedded portion and the cavity. The third bushing has a first insert portion, a third tube portion fitted onto the second tube portion, and a third insert portion adapted to the third step portion, wherein the third insert portion abuts against the side wall of the cavity between the third step portion and the cavity.

[0025] In this embodiment, the sixth bushing is formed by combining the first sub-bushing, the second sub-bushing, and the third sub-bushing, which can form a multi-level nesting and multi-level abutment fit in a limited space, making installation more convenient. A bent diffusion path can be formed between the second step and the second embedded part, and between the third embedded part and the third step, thereby further reducing the risk of reactant gas and by-products leaking out of the cavity sidewall along the mating gap inside the sixth bushing.

[0026] In one possible implementation, a seventh bushing and an eighth bushing are also included; The seventh bushing is located inside the cavity and is fitted onto the fifth bushing. The fifth bushing has a fourth insert portion. The seventh bushing has a fourth channel that communicates with the first outlet of the second channel and a fourth step portion that is adapted to the fourth insert portion. The fourth step portion abuts against the fourth insert portion and the side wall of the cavity. The eighth bushing is located inside the cavity. The eighth bushing has a fifth channel, the axis of which is perpendicular to the axis of the process chamber. The fifth channel connects to the second channel. The inlet end of the eighth bushing has a fifth insert, which abuts against the fourth insert and the side wall of the cavity.

[0027] In this embodiment, the fourth and fifth channels can guide the gas in the second channel to different discharge positions; wherein, the axis of the fifth channel is perpendicular to the axis of the process chamber, enabling the gas to flow laterally in the front edge of the exhaust port. The abutting fit between the fourth stepped portion and the fourth embedded portion, and the abutting fit between the fifth embedded portion and the fourth embedded portion, can form a bent fit interface at the joint between the fifth bushing and the seventh and eighth bushings, extending the path of gas diffusion along the joint gap to the sidewall of the cavity, thereby effectively reducing the possibility of gas overflow and contaminating the sidewall of the cavity.

[0028] Secondly, this application provides a semiconductor device, comprising: The process chamber provided in the above embodiments; And the chuck, which is located inside the cavity.

[0029] In this embodiment, since the semiconductor equipment uses the above-mentioned process chamber, it is possible to reduce the diffusion of reaction gases and by-products into the cover plate assembly and the cavity during the process, reduce the risk of corrosion or deposition contamination of the cover plate assembly and the cavity, and improve the service life of the equipment and the stability of the process. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 An exploded view of a semiconductor device provided in an embodiment of this application; Figure 2 for Figure 1 A sectional view along line AA. Figure 3 for Figure 2 A magnified view of a section at point C; Figure 4 for Figure 2 A magnified view of a section at point D; Figure 5 This is a schematic diagram showing the relative position of the fourth bushing and the exhaust port of the cavity provided in the embodiments of this application.

[0032] Explanation of reference numerals in the attached figures: 1-Semiconductor equipment; 10-Cavity; 101 - Exhaust port; 20-Cover plate; 30 - Shower head; 40 - First bushing; 401 - Protrusion; 50 - Isolation ring; 501 - Extension; 502 - Slit; 60 - Third bushing; 601 - Protrusion; 602 - First channel; 603 - Fifth step; 604 - Seventh embedding part; 70-Vacuum Screw; 80 - Second bushing; 801 - Groove; 802 - Sixth Embedding Part; 90-Fourth bushing; 901 - Sixth step; 902 - Air distribution hole; 100 - Fifth bushing; 1001 - Second channel; 1002 - First step section; 1003 - Fourth embedding section; 110 - Sixth bushing; 1101 - First sub-shear; 1102 - Second sub-shear; 1103 - Third sub-shear; 11011 - First connecting part; 11012 - First tube body part; 11021 - Second connecting part; 11022 - Second tube body part; 11023 - Second step part; 11024 - Third step part; 11031 - Third connecting part; 11032 - Third tube body part; 110121 - Second embedding part; 110311 - First embedding part; 110321 - Third embedding part; 120 - Seventh Bushing; 1201 - Fourth connecting part; 1202 - Fourth tube body part; 1203 - Fourth step part; 12011 - Fourth Channel; 130 - Eighth Bushing; 1301 - Fifth connecting part; 1302 - Fifth tube body part; 13011 - Fifth Embedded Section; 13021 - Fifth Channel; 140-Chuck; 150 - Cover plate assembly. Detailed Implementation

[0033] The process chambers and semiconductor equipment of this application are mainly used in semiconductor manufacturing, especially in scenarios where thin film deposition processes are required on wafers in semiconductor manufacturing, such as chemical vapor deposition equipment, atomic layer deposition equipment, physical vapor deposition equipment, etc., and can also be used in etching equipment.

[0034] To address the technical problem in existing technologies where the barrier capability at the connection point between adjacent bushings is insufficient, allowing reactive gases and byproducts to easily diffuse into the cover plate assembly and cavity through this connection point, this application discloses a process chamber and semiconductor device. By providing mutually compatible protrusions and grooves on the first bushing that opens and closes with the cover plate assembly and the second bushing located within the cavity, the diffusion path of reactive gases and byproducts at the mating point of the first and second bushings is extended. This effectively confines the reactive gases and byproducts within the channels formed by each bushing, reducing the problem of corrosion or contamination caused by direct contact between reactive gases and byproducts with the cover plate assembly and cavity of the process chamber. Furthermore, the mutually compatible protrusions and grooves can guide the first and second bushings when the cover plate assembly is closed, solving the problem of misalignment between the first and second bushings when the cover plate assembly is closed after the first bushing is connected to the cover plate assembly. This improves the service life of the process chamber and, consequently, the process quality.

[0035] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0036] In the description of this application, it should be understood that the terms "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the position or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations of this application.

[0037] The terminology used in the following embodiments is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. As used in the specification and appended claims of this application, the singular expressions “a,” “an,” “the,” “the,” “the,” and “this” are intended to also include expressions such as “one or more” unless the context clearly indicates otherwise.

[0038] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0039] Please see Figure 1 and Figure 2 ,in, Figure 1 An exploded view of a semiconductor device provided in an embodiment of this application; Figure 2 for Figure 1 A cross-sectional view along line AA.

[0040] This application provides a semiconductor device 1, including a process chamber and a chuck 140. The chuck 140 is located inside the cavity 10 of the process chamber and is used to carry wafers. The process chamber provides a closed, clean, and contamination-free process space for process reactions. The interior of the process chamber integrates exhaust channels formed by nested multiple layers of bushings. These exhaust channels are isolated from the inner wall of the cavity 10 and the surface of the cover plate assembly 150, effectively confining reaction gases and byproducts within the exhaust channels formed by the bushings and delivering them to the exhaust port 101 of the process chamber for discharge. This reduces direct contact between reaction gases and byproducts and the cover plate assembly 150 and the cavity 10, thereby solving the problem of easy corrosion or contamination of the cover plate assembly 150 and the cavity 10, and thus improving process stability and the service life of the semiconductor device.

[0041] In some embodiments, please continue reading Figure 1 and Figure 2 And see Figure 3 , Figure 3 for Figure 2A partial enlarged view at point C. This application provides a process chamber, including a chamber body 10, a cover assembly 150, a shower head 30, a first bushing 40, and a second bushing 80. The upper part of the chamber body 10 is an open structure, and an internal receiving cavity is provided for accommodating the first bushing 40 and the second bushing 80. The chamber body 10 also has an exhaust port 101, which is connected to the receiving cavity and is also used to connect to a vacuum system to discharge reaction gases and byproducts to the outside of the chamber body 10. The vacuum system may be, but is not limited to, a molecular pump or a plant evacuation pipeline. The cover assembly 150 is located at the top of the chamber body 10 and includes a cover plate 20 and an isolation ring 50. The cover plate 20 is installed at the top of the chamber body 10, the shower head 30 is installed on the cover plate 20, and the isolation ring 50 is located between the shower head 30 and the cover plate 20, that is, along the axial direction of the process chamber, the isolation ring 50 is sandwiched between the shower head 30 and the cover plate 20. The shower head 30, also known as the gas equalization plate, has multiple precisely designed micropores on its surface to vertically and uniformly deliver the reaction gas into the cavity 10. After the cover plate assembly 150 is installed on top of the cavity 10, the shower head 30 faces the inside of the cavity 10 and corresponds to the chuck 140 inside the cavity 10, exposing the wafer surface on the chuck 140 to the same concentration of gas environment. The lower side of the cover plate assembly 150 has an annular first mating surface, for example, the lower side of the isolation ring 50 has an annular first mating surface. The upper side of the first bushing 40 has an annular second mating surface. The first bushing 40 is located on the lower side of the cover plate assembly 150 and is connected to the cover plate assembly 150 so that the first mating surface and the second mating surface fit together. The lower side of the cover plate assembly 150 refers to the side of the cover plate assembly 150 facing the inside of the cavity 10. For example, if the first bushing 40 is connected to the isolation ring 50 in the cover plate assembly 150, the connection between the first bushing 40 and the cover plate assembly 150 is achieved. In some embodiments, the first bushing 40 may also be connected to the cover plate 20 in the cover plate assembly 150 to achieve the connection between the first bushing 40 and the cover plate assembly 150. The first bushing 40 may have an annular structure or a hollow square structure. The first bushing 40 has one or more protrusions 401, such as the protrusions 401 being located on the lower side of the first bushing 40. The second bushing 80 is disposed in the cavity 10. The second bushing 80 may have an annular structure or a hollow square structure. The second bushing 80 has one or more grooves 801 that are adapted to one or more protrusions 401, such as the grooves 801 being located on the upper side of the second bushing 80, and the grooves 801 and protrusions 401 are one-to-one corresponding, with the protrusions 401 being embedded in the corresponding grooves 801.

[0042] In this embodiment, since the lower side of the cover plate assembly 150 is provided with an annular first mating surface and the upper side of the first bushing 40 is provided with an annular second mating surface, the first bushing 40 is disposed on the lower side of the cover plate assembly 150 and connected to the cover plate assembly 150 so that the first mating surface and the second mating surface fit together. The first bushing 40 can prevent the reaction gas and by-products from passing through, thereby preventing the reaction gas and by-products from directly contacting the cover plate assembly 150 from the lower side of the cover plate assembly 150. The first bushing 40 opens and closes together with the cover plate assembly 150. The second bushing 80 is located inside the cavity 10. The mating point between the first bushing 40 and the second bushing 80 is a location where reactive gases and byproducts can easily escape. Because the protrusion 401 is embedded in the corresponding groove 801, the mating point between the first bushing 40 and the second bushing 80 changes from a planar connection to a labyrinthine path. The labyrinthine path refers to the tortuous path formed by the nested protrusions 401 and grooves 801 between the mating surfaces. Reactive gases and byproducts need to make multiple turns to pass through it, thereby effectively extending the diffusion path of reactive gases and byproducts at the mating point, increasing the diffusion resistance, and making it difficult for reactive gases and byproducts to escape to the cavity 10 and the cover plate assembly 150 through this mating point. This improves the problem of corrosion or contamination of the cover plate assembly 150 and the cavity 10 caused by reactive gases and byproducts, and improves the service life of the cover plate assembly 150 and the cavity 10. The cross-sectional shape of the protrusion 401 and the groove 801 can be, but is not limited to, trapezoidal, rectangular, triangular, or other shapes. Furthermore, since the first bushing 40 opens and closes together with the cover plate assembly 150 after being connected to it, if the first bushing 40 and the second bushing 80 are planar butt-fitted, it will be difficult to align the first bushing 40 and the second bushing 80 when the cover plate assembly 150 is closed. This misalignment may even cause them to collide, damaging the bushings or generating particulate contaminants. In this embodiment, the protrusion 401 of the first bushing 40 is adapted to the groove 801 of the second bushing 80. During the closing process of the cover assembly 150, the protrusion 401 can guide and position the first bushing 40 and the second bushing 80 when it is embedded in the groove 801. Even if there is a certain deviation in the connection position between the first bushing 40 and the cover assembly 150, the protrusion 401 can slide into the groove 801 along the groove wall and automatically correct the relative position of the first bushing 40 and the second bushing 80. This solves the problem that the first bushing 40 and the second bushing 80 are difficult to align when the cover assembly 150 is closed, reduces the risk of the first bushing 40 and the second bushing 80 colliding during the closing process, and improves the safety and reliability of the assembly.

[0043] In some embodiments, the first bushing 40 and the isolation ring 50 are connected by vacuum screws 70, which are fastening screws specifically designed for vacuum or clean environments. The first bushing 40 has one or more first connecting holes, and the isolation ring 50 has second connecting holes corresponding to each of the first connecting holes. The second connecting holes may be, but are not limited to, threaded holes. Vacuum screws 70 pass through the first connecting holes and the corresponding second connecting holes to connect the first bushing 40 and the isolation ring 50. There may be multiple vacuum screws 70, which may be spaced apart circumferentially along the first bushing 40 to effectively distribute stress. The lower side of the isolation ring 50 has a first mating surface, and the upper side of the first bushing 40 has a second mating surface. After the first bushing 40 and the isolation ring 50 are connected by vacuum screws 70, the second mating surface fits against the first mating surface. The first and second mating surfaces may be, but are not limited to, planes. The first and second mating surfaces may be polished along the grain, and the roughness Ra value of the first and second mating surfaces may be less than or equal to 0.4. Because the vacuum screw 70 can apply a tightening force to the first bushing 40 and the isolation ring 50, ensuring a tight fit between the second mating surface and the first mating surface, and because the first and second mating surfaces have relatively small roughness, the gap between the first bushing 40 and the isolation ring 50 can be effectively reduced, forming a precision fit. This effectively improves the problem of reactant gases and byproducts escaping between the first and second mating surfaces, reducing the diffusion and deposition pollution of reactant gases and byproducts. Simultaneously, the first bushing 40 is connected to the cover plate assembly 150 as a whole through the isolation ring 50, allowing it to open and close as a whole with the cover plate assembly 150, facilitating assembly and maintenance. In other embodiments, the first bushing 40 and the isolation ring 50 can also be connected by other detachable connection methods such as snap-fit ​​connection, pin connection, or clamping fastener. For example, the upper side of the first bushing 40 is provided with a snap-fit, and the isolation ring 50 is provided with a groove that matches the snap-fit. The snap-fit ​​engages with the groove to achieve a detachable connection between the first bushing 40 and the isolation ring 50.

[0044] In some embodiments, the isolation ring 50 has an extension 501 extending to the lower side of the first bushing 40. For example, if the extension 501 is located on the side of the first bushing 40 away from the sidewall of the cavity 10 (i.e., the extension 501 is located on the side of the first bushing 40 closer to the process space), the lower side of the isolation ring 50 has a first mating surface, and the upper side of the first bushing 40 has a second mating surface. The first mating surface and the second mating surface are in contact. The extension 501 extends vertically downwards to a position below the gap between the second mating surface and the first mating surface, thereby shielding the gap between the second mating surface and the first mating surface. Reactive gases and byproducts need to bypass the extension 501 to reach the gap between the second mating surface and the first mating surface, further reducing the risk of reactive gases and byproducts escaping through this gap and reducing diffusion and deposition contamination of reactive gases and byproducts.

[0045] Please continue reading. Figure 3 In some embodiments, the protrusion 401 and the groove 801 are interference-fitted. Specifically, after the first bushing 40 and the isolation ring 50 are connected by vacuum screws 70, during the process of assembling the cover assembly 150 to the top of the cavity 10, the first bushing 40 will descend together with the cover assembly 150, so that the first bushing 40 will first contact the second bushing 80. When the cover assembly 150 reaches the final assembly position, the first bushing 40 will press the second bushing 80, and the interference will be absorbed by at least one of the first bushing 40 and the second bushing 80 undergoing a small elastic bending deformation. This results in an intermittent, very small gap or no gap at the mating point of the protrusion 401 and the groove 801, which can reduce the passage of reactive gases and by-products and further enhance the anti-contamination effect.

[0046] In some embodiments, the lower side of the first bushing 40 is provided with a first abutting surface, which is located on the side of all protrusions 401 near the cavity 10. The upper side of the second bushing 80 is provided with a second abutting surface, which is located on the side of all grooves 801 near the cavity 10. The second abutting surface abuts against the first abutting surface. The first and second abutting surfaces are located near the side wall of the cavity 10 along the labyrinthine path formed by the protrusions 401 and grooves 801. After the cover plate assembly 150 is assembled in place, the first bushing 40 is pressed down with the cover plate assembly 150, applying a pre-tightening force to the second abutting surface, so that the first and second abutting surfaces abut tightly, forming a surface contact seal on the side of the labyrinthine path near the cavity 10. Even if a small amount of reactive gas and byproducts enter the gap between the protrusions 401 and the grooves 801, they will be blocked by the abutting first and second abutting surfaces, making it difficult for them to escape to the side wall of the cavity 10, thereby effectively reducing the diffusion and deposition of reactive gas and byproducts.

[0047] In some embodiments, the lower side of the first bushing 40 is provided with a first abutting surface, which is located on the side of all protrusions 401 near the cavity 10. The upper side of the second bushing 80 is provided with a second abutting surface, which is located on the side of all grooves 801 near the cavity 10. That is, the first abutting surface and the second abutting surface are located near the side wall of the cavity 10 along the labyrinthine path formed by the protrusions 401 and the grooves 801. The protrusions 401 and the grooves 801 are clearance-fitted. If the depth of the groove 801 is greater than the height of the protrusion 401, the protrusion 401 does not contact the bottom of the groove 801 after being embedded in it, thereby causing the second abutting surface to abut against the first abutting surface. In this embodiment, the protrusion 401 and the groove 801 are fitted together with a gap to form a labyrinthine small gap path, which can prolong the diffusion path of the reactant gas and by-products and reduce their diffusion kinetic energy. After the cover plate assembly 150 is assembled in place, the first bushing 40 is pressed down with the cover plate assembly 150, applying a pre-tightening force to the second abutment surface, so that the first abutment surface and the second abutment surface are tightly abutted together. A surface contact seal is formed on the side of the cavity 10 near the labyrinthine path between the protrusion 401 and the groove 801. That is, the two planes are tightly fitted by the pre-tightening force to form a weak seal with a very small gap or zero gap. Even if a small amount of reactant gas and by-products enter the gap between the protrusion 401 and the groove 801, they will be blocked by the abutting first abutment surface and the second abutment surface, making it difficult for them to escape to the side wall of the cavity 10, thereby effectively reducing the diffusion and deposition pollution of reactant gas and by-products. The first and second contact surfaces can be polished along the grain, and the roughness Ra value of the first and second contact surfaces can be less than or equal to 0.4, so that the first and second contact surfaces can form a tight fit after contact, further improving the problem of reaction gas and by-products escaping from between the first and second contact surfaces.

[0048] In other embodiments, while the second abutting surface abuts against the first abutting surface, the protrusion 401 and the groove 801 can also be interference-fitted. For example, the depth of the groove 801 is greater than the height of the protrusion 401, but the width of the groove 801 is less than the width of the protrusion 401, so that the protrusion 401 does not contact the bottom of the groove 801 after being embedded in the groove 801, but the side of the protrusion 401 is interference-fitted with the groove wall of the groove 801, and the first abutting surface on the lower side of the first bushing 40 and the second abutting surface on the upper side of the second bushing 80 remain in contact. In this way, the mating point of the protrusion 401 and the groove 801 forms an intermittent, very small gap or no gap, and the first abutting surface and the second abutting surface form a surface contact seal near the side wall of the cavity 10 in the labyrinthine path formed by the protrusion 401 and the groove 801, which can further enhance the barrier capability of the mating point of the first bushing 40 and the second bushing 80, and reduce the leakage of reactive gases and by-products through this mating point.

[0049] Please continue reading. Figure 2 and Figure 3In some embodiments, the process chamber further includes a third bushing 60, which is disposed within the cavity 10 and mates with the second bushing 80. The third bushing 60 may be an annular structure or a hollow square structure. The lower side of the first bushing 40 is provided with a first abutting surface, and the upper side of the second bushing 80 is provided with a second abutting surface, which abuts against the first abutting surface. The lower side of the second bushing 80 is provided with a third abutting surface that is opposite to the first abutting surface along the axial direction of the process chamber. The third bushing 60 is provided with a fourth abutting surface, such as the fourth abutting surface located at the top of the third bushing 60, which abuts against the third abutting surface to clamp the second bushing 80 vertically with the first abutting surface. In this embodiment, the first abutting surface abuts against the upper side of the second bushing 80 from above, and the fourth abutting surface abuts against the third abutting surface on the lower side of the second bushing 80 from below. This causes the second bushing 80 to be clamped vertically, i.e., along the axial direction of the process chamber, by the first bushing 40 and the third bushing 60. Under the clamping force, the mating surfaces of the second bushing 80 and the first bushing 40 and the third bushing 60 are tightly fitted together, forming a clearance fit. This effectively improves the problem of reactive gases and byproducts escaping from the mating area between the second bushing 80 and the third bushing 60, reducing the diffusion and deposition of reactive gases and byproducts. Simultaneously, the clamping fit also positions and fixes the second bushing 80, improving the positional stability of each bushing after assembly. The third and fourth abutting surfaces can be precision machined and polished along the grain, and their roughness Ra value can be less than or equal to 0.4.

[0050] In some embodiments, the bottom of the second bushing 80 may be provided with a sixth embedding portion 802. The sixth embedding portion 802 may be a stepped or block-shaped structure machined from the bottom of the second bushing 80. The process chamber also includes a third bushing 60, which is disposed within the cavity 10 and mates with the second bushing 80. The third bushing 60 is provided with a fifth stepped portion 603 adapted to the sixth embedding portion 802. The fifth stepped portion 603 may be an L-shaped structure. The sixth embedding portion 802 includes the aforementioned third abutting surface and a fifth abutting surface connected to the third abutting surface. The fifth stepped portion 603 includes the aforementioned fourth abutting surface and a sixth abutting surface abutting against the fifth abutting surface. The connection may be, but is not limited to, a vertical connection. By abutting the third and fourth abutting surfaces, and the fifth and sixth abutting surfaces, the sixth embedded portion 802 and the fifth stepped portion 603 form a tight fit by extending the diffusion path of reactant gases and byproducts. This effectively improves the problem of reactant gases and byproducts escaping from this point, reducing diffusion and deposition contamination. The surface roughness Ra values ​​of the fifth and sixth abutting surfaces can also be less than or equal to 0.4, and the third, fourth, fifth, and sixth abutting surfaces can all be precision turned and polished along the grain.

[0051] Please continue reading. Figure 2 and Figure 3 In some embodiments, the process chamber further includes a third bushing 60, which is disposed within the cavity 10. The third bushing 60 mates with the second bushing 80, and a first channel 602 is formed between the inner walls of the second bushing 80 and the third bushing 60. The inner wall of the third bushing 60 refers to the outer circumferential surface of the inner ring and the inner circumferential surface of the outer ring of the third bushing 60. The cavity 10 is provided with an exhaust port 101, and the outlet of the first channel 602 communicates with the exhaust port 101. The cover plate assembly 150 includes a cover plate 20 and an isolation ring 50. The cover plate 20 is installed on the top of the cavity 10, the shower head 30 is installed on the cover plate 20, and the isolation ring 50 is located between the shower head 30 and the cover plate 20. That is, along the axial direction of the process chamber, the isolation ring 50 is sandwiched between the shower head 30 and the cover plate 20. The isolation ring 50 has an extension 501 extending to the lower side of the first bushing 40. If the extension 501 is located on the side of the first bushing 40 away from the side wall of the cavity 10, that is, the extension 501 is located on the side of the first bushing 40 closer to the process space, the top of the third bushing 60 has a protrusion 601 extending toward the extension 501. A slit 502 is formed between the extension 501 and the protrusion 601. The slit 502 is connected to the inlet of the first channel 602. During thin film deposition, a negative pressure environment is created through the exhaust port 101. Under this negative pressure, reactant gases and byproducts enter the first channel 602 through the slit 502. The slit 502 also provides initial homogenization and flow restriction for the reactant gases and byproducts. The first channel 602 confines the reactant gases and byproducts between the second bushing 80 and the third bushing 60, and guides them towards the exhaust port 101, reducing disordered diffusion within the cavity 10. Furthermore, the inner ring of the third bushing 60 and the lower part of the chuck 140 can form a cavity, into which inert gas can be introduced to reduce the leakage of reactant gases and byproducts from the gaps between the chuck 140 and the third bushing 60.

[0052] In some embodiments, the process chamber further includes a third bushing 60, which is disposed within the cavity 10 and mates with the second bushing 80. The first bushing 40, the second bushing 80, the third bushing 60, and the isolation ring 50 can all be made of aluminum alloy, which can withstand corrosion from corrosive gases such as TiN, TiCl4, and HF. A first channel 602 is formed between the inner walls of the second bushing 80 and the third bushing 60. The inner wall of the second bushing 80 facing the first channel 602 is a sandblasted surface, and the inner wall of the third bushing 60 facing the first channel 602 is also a sandblasted surface. A sandblasted surface refers to a metal surface treated by a sandblasting process, where sand particles are sprayed at high speed onto the metal surface. The impact of the sand particles causes the metal surface to form a micro-uneven structure with a certain roughness. The inner walls of the second bushing 80 and the third bushing 60 facing the first channel 602 are treated with sandblasting. The sandblasted surface has high surface roughness and specific surface area, which enhances the adsorption of deposits. Therefore, reactive gases and byproducts are easily deposited on the surfaces of the second bushing 80 and the third bushing 60, and are less likely to peel off. This enhances the ability of the second bushing 80 and the third bushing 60 to fix reactive gases and byproducts, reducing contamination of the cavity 10 and the cover assembly 150 by reactive gases and byproducts. After a certain number of deposition reactions, the shower head 30 and all bushings can be replaced and cleaned together to reduce the shedding of the deposited film and the formation of particulate contaminants. It is understood that in some other embodiments, only the inner wall of the second bushing 80 facing the first channel 602 may be set as a sandblasted surface, or only the inner wall of the third bushing 60 facing the first channel 602 may be set as a sandblasted surface; or both the inner walls of the second bushing 80 and the third bushing 60 facing the first channel 602 may be set as non-sandblasted surfaces, for example, as surfaces that have been precision turned or polished. In this case, the first channel 602 can still confine the reactant gas and byproducts between the second bushing 80 and the third bushing 60, and guide the reactant gas and byproducts to the exhaust port 101.

[0053] Please continue reading. Figure 2 and Figure 3 And see Figure 5 , Figure 5This is a schematic diagram showing the relative position of the fourth bushing and the exhaust port of the cavity provided in an embodiment of this application. In some embodiments, the process chamber further includes a third bushing 60, which is disposed within the cavity 10. The third bushing 60 cooperates with a second bushing 80, and a first channel 602 is formed between the inner walls of the second bushing 80 and the third bushing 60. The cavity 10 is provided with an exhaust port 101, and the outlet of the first channel 602 communicates with the exhaust port 101. The process chamber also includes a fourth bushing 90, which can be an annular plate-shaped structure. The fourth bushing 90 is disposed within the first channel 602 and divides the first channel 602. For example, the fourth bushing 90 divides the first channel 602 vertically into upper and lower regions. The region above the fourth bushing 90 is a first-level gas equalization region, and the region below the fourth bushing 90 is a second-level gas equalization region. The second-level gas equalization region communicates with the exhaust port 101. Figure 5 As shown, the fourth bushing 90 is provided with multiple gas equalization holes 902. These holes 902 connect the first-stage gas equalization region and the second-stage gas equalization region. Reactant gases and byproducts need to pass through the fourth bushing 90 via the gas equalization holes 902 to achieve graded gas equalization. The number of gas equalization holes 902 on the side of the fourth bushing 90 closer to the exhaust port 101 is less than the number on the side farther from the exhaust port 101. It should be noted that, based on the position of the exhaust port 101, the fourth bushing 90 can be divided circumferentially into two semi-circular regions. One semi-circular region is closer to the exhaust port 101; this semi-circular region is the side of the fourth bushing 90 closer to the exhaust port 101. The other semi-circular region is farther from the exhaust port 101; this semi-circular region is the side of the fourth bushing 90 farther from the exhaust port 101. Considering that the extraction rate near exhaust port 101 is higher than that far from exhaust port 101, with the same size of the uniform distribution holes 902, setting the number of uniform distribution holes 902 on the semi-annular region near exhaust port 101 to be less than the number on the semi-annular region far from exhaust port 101 can balance the circumferential pressure difference caused by the position of exhaust port 101. This allows the reactant gas and byproducts to be uniformly extracted as they flow through different directions of the fourth bushing 90, thus improving the uniformity of the overall airflow within the first channel 602, thereby improving the uniformity of the wafer surface coating thickness. Furthermore, the circumferential pressure difference caused by the position of exhaust port 101 can also be balanced by adjusting the size of the uniform distribution holes 902 at different positions.

[0054] In some embodiments, the process chamber further includes a third bushing 60 and a fourth bushing 90. The third bushing 60 is disposed within the cavity 10 and mates with the second bushing 80. The third bushing 60 has a seventh insert portion 604, and the fourth bushing 90 has a sixth step portion 901 adapted to the seventh insert portion 604. The seventh insert portion 604 includes a first mating surface and a second mating surface connected to the first mating surface. The first mating surface can be an annular plane extending in a horizontal direction, and the second mating surface can be a cylindrical surface. The sixth step portion 901 includes a third mating surface abutting against the first mating surface and a fourth mating surface abutting against the second mating surface. The third mating surface can be an annular plane extending in a horizontal direction, and the fourth mating surface can be a cylindrical surface. Because the first mating surface abuts against the third mating surface and the second mating surface abuts against the fourth mating surface, the seventh embedding part 604 and the sixth step part 901 form a tight fit on the basis of extending the diffusion path of the reactant gas and by-products. Therefore, it can effectively improve the problem of reactant gas and by-products escaping from here and reduce the diffusion and deposition pollution of reactant gas and by-products.

[0055] Please continue reading. Figure 1 , Figure 2 and Figure 3 And see Figure 4 , Figure 4 for Figure 2A magnified view of part D in the middle. The process chamber also includes a second bushing 80 and a third bushing 60, with a first channel 602 formed between the inner walls of the second bushing 80 and the third bushing 60. The process chamber also includes a fifth bushing 100 and a sixth bushing 110, both of which can be made of aluminum alloy and can withstand corrosion from corrosive gases such as TiN, TiCl4, and HF. For ease of understanding, the general structure of the interior of the cavity 10 is described below: Along the axial direction of the process chamber, the interior of the cavity 10 can be roughly divided into an upper region near the cover plate assembly 150 and a lower region away from the cover plate assembly 150. The chuck 140 is located in the middle of the upper region. The first bushing 40, the second bushing 80, the third bushing 60 and the fourth bushing 90 are located in the upper region and surround the outer periphery of the chuck 140. A first channel 602 is formed between the inner walls of the second bushing 80 and the third bushing 60. The fifth bushing 100, the sixth bushing 110, the seventh bushing 120 and the eighth bushing 130 are located in the lower region, that is, below the chuck 140 and near the exhaust port 101, for guiding the reaction gas and by-products in the first channel 602 to the exhaust port 101 for discharge. A fifth bushing 100 is located inside the cavity 10. A second channel 1001 is provided within the fifth bushing 100, communicating with the exhaust port 101. The axial direction of the second channel 1001 is parallel to the axial direction of the process chamber, meaning the second channel 1001 extends vertically. A first step portion 1002 is provided on the outer side of the fifth bushing 100, such as on the side of the fifth bushing 100 facing the sixth bushing 110. The sixth bushing 110 is located inside the cavity 10, and a third channel is provided within the sixth bushing 110. The axial direction of the third channel is perpendicular to the axial direction of the process chamber, meaning the third channel extends horizontally. The third channel connects the first channel 602 and the second channel 1001, allowing reactant gases and byproducts to flow from the first channel 602 to the third channel, then into the second channel 1001 and flow towards the exhaust port 101. The sixth bushing 110 has a first connecting portion 11011 at its inlet end and a first embedding portion 110311 at its outlet end. The first connecting portion 11011 is located within the first channel 602 and abuts against the inner wall of the third bushing 60, thereby extending the gap at the connection between the sixth bushing 110 and the third bushing 60 and effectively improving the problem of reactant gases and byproducts escaping from the connection between the sixth bushing 110 and the third bushing 60. The first embedding portion 110311 is perpendicular to the axial direction of the third channel, that is, the first embedding portion 110311 extends in a direction perpendicular to the axial direction of the third channel. The first embedding portion 110311 is adapted to the first step portion 1002 and abuts against the first step portion 1002 and the side wall of the cavity 10.

[0056] It should be noted that if the outlet end of the sixth bushing 110 is directly horizontally connected to the fifth bushing 100 along the axial direction of the third channel, the connection gap extends vertically and directly toward the side wall of the cavity 10, and the reaction gas and by-products can easily leak to the side wall of the cavity 10 through the connection gap. In this embodiment, the outlet end of the sixth bushing 110 is not horizontally connected to the fifth bushing 100 along the axial direction of the third channel. Instead, it is embedded in the first step portion 1002 through the first embedding portion 110311 perpendicular to the axial direction of the third channel. The first embedding portion 110311 abuts against the first step portion 1002 and the side wall of the cavity 10, so that an L-shaped mating interface is formed between the fifth bushing 100 and the sixth bushing 110. That is, the mating gap is formed by connecting a segment extending in one direction and a segment extending in a direction perpendicular to it. The mating gap is bent and blocked by the side wall of the cavity 10, which prolongs the diffusion path of the reactant gas and by-products at the mating gap of the fifth bushing 100 and the sixth bushing 110. This is used to isolate the reactant gas and by-products from the side wall of the cavity 10, thereby reducing the diffusion and deposition pollution of the reactant gas and by-products.

[0057] In some embodiments, the process chamber further includes a second bushing 80 and a third bushing 60, and also includes a fifth bushing 100 and a sixth bushing 110. The fifth bushing 100 is disposed inside the cavity 10, and a first step portion 1002 is provided on the outer side of the fifth bushing 100. The sixth bushing 110 is disposed inside the cavity 10, and a first connecting portion 11011 is provided at the inlet end of the sixth bushing 110, and a first embedding portion 110311 is provided at the outlet end of the sixth bushing 110. The first embedding portion 110311 is adapted to the first step portion 1002, and the first embedding portion 110311 abuts against the first step portion 1002 and the side wall of the cavity 10. Specifically, the sixth bushing 110 includes a first sub-bushing 1101, a second sub-bushing 1102, and a third sub-bushing 1103. The first sub-shoulder 1101 has a first connecting portion 11011 and a first tube portion 11012 connected to the first connecting portion 11011. The first tube portion 11012 includes a second insert portion 110121 extending toward the fifth bushing 100. The second sub-shoulder 1102 has a second connecting portion 11021 and a second tube portion 11022 connected to the second connecting portion 11021. The second tube portion 11022 extends toward the fifth bushing 100. A second step portion 11023 is formed between the inner wall of the second connecting portion 11021 and the end of the second tube portion 11022, which is adapted to the second insert portion 110121. A third step portion 11024 is formed between the end of the second connecting portion 11021 and the outer wall of the second tube portion 11022. That is, the third step portion 11024 is formed on the outer side of the second tube portion 11022 and is disposed opposite to the second step portion 11023. The second connecting part 11021 is sleeved on the outer periphery of the first tube part 11012, and the second step part 11023 abuts against the second embedding part 110121 and the side wall of the cavity 10, so that an L-shaped mating interface is formed between the second sub-blank 1102 and the first sub-blank 1101. The third sub-shoulder 1103 is provided with a third connecting portion 11031 and a third tube portion 11032 connected to the third connecting portion 11031. The third connecting portion 11031 is provided with the aforementioned first embedding portion 110311. The third tube portion 11032 includes a third embedding portion 110321 adapted to the third step portion 11024. The third tube portion 11032 is sleeved on the outer periphery of the second tube portion 11022, and the third embedding portion 110321 abuts against the third step portion 11024 and the side wall of the cavity 10, so that an L-shaped mating interface is formed between the third sub-shoulder 1103 and the second sub-shoulder 1102.

[0058] In this embodiment, the sixth bushing 110 adopts a split structure in which the first sub-bushing 1101, the second sub-bushing 1102, and the third sub-bushing 1103 are nested in stages, which facilitates the processing, assembly, and replacement of each sub-bushing. Since the first connecting portion 11011 is located within the first channel 602 and abuts against the inner wall of the third bushing 60, a tight fit is formed between the first sub-bushing 1101 and the third bushing 60, effectively improving the problem of reactant gases and byproducts escaping from the connection between the first sub-bushing 1101 and the third bushing 60. Because the second stepped portion 11023 abuts against the second embedded portion 110121 and the side wall of the cavity 10, it extends the diffusion path of reactant gases and byproducts at the joint between the first sub-bushing 1101 and the second sub-bushing 1102, thus isolating reactant gases and byproducts from the side wall of the cavity 10 and reducing diffusion and deposition contamination of reactant gases and byproducts. Since the third embedded part 110321 abuts between the third stepped part 11024 and the side wall of the cavity 10, it extends the diffusion path of the reaction gas and by-products at the joint gap between the second sub-shoulder 1102 and the third sub-shoulder 1103, thereby isolating the reaction gas and by-products from the side wall of the cavity 10 and reducing the diffusion and deposition contamination of the reaction gas and by-products.

[0059] Please continue reading. Figure 2 and Figure 4In some embodiments, the process chamber further includes a second bushing 80 and a third bushing 60, with a first channel 602 formed between the inner walls of the second bushing 80 and the third bushing 60. The process chamber also includes a fifth bushing 100 and a sixth bushing 110. The fifth bushing 100 is disposed inside the cavity 10, and a second channel 1001 is provided inside the fifth bushing 100. The axial direction of the second channel 1001 is parallel to the axial direction of the process chamber, and the second channel 1001 communicates with the exhaust port 101. A first step portion 1002 is provided on the outer side of the fifth bushing 100. The sixth bushing 110 is disposed inside the cavity 10, and a third channel is provided inside the sixth bushing 110. The axis of the channel is perpendicular to the axis of the process chamber. The third channel connects the first channel 602 and the second channel 1001. The inlet end of the sixth bushing 110 is provided with a first connecting part 11011, and the outlet end of the sixth bushing 110 is provided with a first embedding part 110311. The first connecting part 11011 is located inside the first channel 602 and abuts against the inner wall of the third bushing 60. The first embedding part 110311 is perpendicular to the axis of the third channel and is adapted to the first step part 1002. The first embedding part 110311 abuts between the first step part 1002 and the side wall of the cavity 10. The process chamber also includes a seventh bushing 120 and an eighth bushing 130. Both the seventh bushing 120 and the eighth bushing 130 can be made of aluminum alloy, which can withstand corrosion from corrosive gases such as TiN, TiCl4, and HF. The seventh bushing 120 is located inside the cavity 10 and is fitted onto the fifth bushing 100. The fifth bushing 100 is provided with a fourth insert 1003, such as the fourth insert 1003 being located at the bottom of the fifth bushing 100. The fourth insert 1003 is a ring structure and extends circumferentially along the fifth bushing 100. The seventh bushing 120 is provided with a fourth connecting portion 1201 and a fourth tube portion 1202 connected to the fourth connecting portion 1201. The outer walls of the fourth connecting portion 1201 and the fourth tube portion 1202 are in contact with the side wall of the cavity 10. The connection between the fourth connecting portion 1201 and the fourth tube portion 1202 forms a fourth step portion 1203 that is adapted to the fourth insert portion 1003. The fourth tube portion 1202 is sleeved on the outer wall of the fifth bushing 100, and the fourth step portion 1203 abuts against the fourth insert portion 1003 and the side wall of the cavity 10, so that an L-shaped mating interface is formed between the seventh bushing 120 and the fifth bushing 100. The fourth connection part 1201 is provided with a fourth channel 12011 that communicates with the first outlet of the second channel 1001. The axial direction of the fourth channel 12011 can be parallel to the axial direction of the process chamber. The fourth channel 12011 is connected to the exhaust port 101, so that the reaction gas and by-products flow from the second channel 1001 to the fourth channel 12011 and are discharged.

[0060] The eighth bushing 130 is located inside the cavity 10. The eighth bushing 130 has a fifth connecting part 1301 and a fifth tube part 1302 connected to the fifth connecting part 1301. The fifth connecting part 1301 is located between the seventh bushing 120 and the fifth bushing 100. The outer wall of the fifth tube part 1302 is in contact with the side wall of the cavity 10. The eighth bushing 130 has a fifth channel 13021. If the fifth channel 13021 is opened in the fifth tube part 1302, the axis of the fifth channel 13021 is perpendicular to the axis of the process chamber, that is, the fifth channel 13021 extends in the horizontal direction. The fifth channel 13021 connects to the second channel 1001. If the fifth channel 13021 is connected to the second outlet of the second channel 1001 and the fifth channel 13021 is connected to the exhaust port 101, the reaction gas and by-products flow from the second channel 1001 to the fifth channel 13021 and are then discharged. The inlet end of the eighth bushing 130 is provided with a fifth insert portion 13011. If the fifth insert portion 13011 is located at the fifth connecting portion 1301, since the fourth insert portion 1003 has an annular structure, the fifth insert portion 13011 is adapted to the fourth insert portion 1003, and the fifth insert portion 13011 also abuts against the fourth insert portion 1003 and the side wall of the cavity 10. That is, the fourth step portion 1203 and the fifth insert portion 13011 respectively cooperate with the same annular fourth insert portion 1003 at different positions, so that there is no need to provide a separate step portion on the fifth bushing 100 for the eighth bushing 130, so that an L-shaped mating interface is formed between the eighth bushing 130 and the fifth bushing 100.

[0061] In this embodiment, the first outlet of the second channel 1001 exhausts gas through the fourth channel 12011, and the second outlet of the second channel 1001 exhausts gas through the fifth channel 13021, forming a multi-channel exhaust system, which is beneficial to improving exhaust efficiency. Since the fourth step portion 1203 abuts between the fourth embedded portion 1003 and the side wall of the cavity 10, it extends the diffusion path of the reactant gas and by-products at the joint between the seventh bushing 120 and the fifth bushing 100, thereby isolating the reactant gas and by-products from the side wall of the cavity 10 and reducing the diffusion and deposition contamination of the reactant gas and by-products. Similar to the outlet end of the sixth bushing 110, the inlet end of the eighth bushing 130 is not horizontally connected to the fifth bushing 100 along the axial direction of the fifth channel 13021. Instead, it abuts against the annular fourth insert 1003 and the side wall of the cavity 10 through the fifth insert 13011 at the inlet end, so that an L-shaped mating interface is formed between the eighth bushing 130 and the fifth bushing 100. The gap at the mating seam is bent and blocked by the side wall of the cavity 10, which prolongs the diffusion path of the reactant gas and by-products at the mating seam of the eighth bushing 130 and the fifth bushing 100. This is used to isolate the reactant gas and by-products from the side wall of the cavity 10 and reduce the diffusion and deposition pollution of the reactant gas and by-products. In addition, a first through hole and a second through hole can be provided on the fourth tube body 1202. The first through hole is for the third tube body 11032 of the third sub-blank 1103 to pass through, so that the third connecting part 11031 of the third sub-blank 1103 is located between the fifth bushing 100 and the seventh bushing 120. The second through hole is for the fifth tube body 1302 of the eighth bushing 130 to pass through, so that the fifth connecting part 1301 of the eighth bushing 130 is located between the fifth bushing 100 and the seventh bushing 120.

[0062] During the process reaction, the reactant gas is uniformly delivered to the wafer surface on the chuck 140 via the showerhead 30 for reaction. Guided by the negative pressure environment formed by the exhaust port 101, the reactant gas and byproducts sequentially pass through the slit 502, the first-stage gas equalization area, the gas equalization hole 902 on the fourth bushing 90, the second-stage gas equalization area, the third channel, the second channel 1001, and the fourth channel 12011 and / or the fifth channel 13021 before being discharged from the cavity 10 through the exhaust port 101. Throughout the exhaust path, the reactant gas and byproducts are confined within the channels formed by each bushing and isolated from the cover plate assembly 150 and the cavity 10, thereby reducing corrosion or contamination of the cover plate assembly 150 and the cavity 10.

[0063] It should be noted that in this specification, relational terms such as first and second are used only to distinguish one entity from several other entities, and do not necessarily require or imply any such actual relationship or order between these entities.

[0064] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0065] The above-described preferred embodiments have further detailed the purpose, technical solutions, and advantages of this application. It should be understood that the above description is only a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A process chamber, characterized in that, It includes a cavity (10), a cover plate assembly (150), a first bushing (40), and a second bushing (80); The cover plate assembly (150) is located on top of the cavity (10); The cover plate assembly (150) has an annular first mating surface on its lower side, and the first bushing (40) has an annular second mating surface on its upper side. The first bushing (40) is located on the lower side of the cover plate assembly (150) and connected to the cover plate assembly (150) so that the first mating surface and the second mating surface fit together. The first bushing (40) has one or more protrusions (401). The second bushing (80) is disposed inside the cavity (10), and the second bushing (80) is provided with one or more grooves (801) that are adapted to the one or more protrusions (401).

2. The process chamber according to claim 1, characterized in that, The process chamber also includes a shower head (30), and the cover plate assembly (150) includes a cover plate (20) and an isolation ring (50). The cover plate (20) is installed on the top of the chamber (10), the shower head (30) is installed on the cover plate (20), and the isolation ring (50) is located between the shower head (30) and the cover plate (20). The first mating surface is provided on the lower side of the isolation ring (50), and the first bushing (40) is connected to the isolation ring (50) by a vacuum screw (70).

3. The process chamber according to claim 2, characterized in that, The isolation ring (50) has an extension (501) extending to the lower side of the first bushing (40), the extension (501) covering the gap between the second mating surface and the first mating surface.

4. The process chamber according to any one of claims 1 to 3, characterized in that, The protrusion (401) and the groove (801) are interference-fitted.

5. The process chamber according to any one of claims 1 to 3, characterized in that, The first bushing (40) has a first abutting surface on its lower side, which is located on the side of the one or more protrusions (401) near the cavity (10). The second bushing (80) has a second abutting surface on its upper side, which is located on the side of the one or more grooves (801) near the cavity (10). The protrusion (401) and the groove (801) are in clearance fit, and the second abutting surface abuts against the first abutting surface.

6. The process chamber according to claim 5, characterized in that, It also includes a third bushing (60); The third bushing (60) is disposed inside the cavity (10). The third bushing (60) cooperates with the second bushing (80). The lower side of the second bushing (80) is provided with a third abutting surface that is opposite to the first abutting surface along the axial direction of the process chamber. The third bushing (60) is provided with a fourth abutting surface that abuts against the third abutting surface, so as to clamp the second bushing (80) together with the first abutting surface along the axial direction of the process chamber.

7. The process chamber according to claim 6, characterized in that, A first channel (602) is formed between the inner walls of the second bushing (80) and the third bushing (60), and the cavity (10) is provided with an exhaust port (101). The outlet of the first channel (602) is connected to the exhaust port (101). The inner wall of the second bushing (80) facing the first channel (602) is sandblasted. And / or, the inner wall of the third bushing (60) facing the first channel (602) is sandblasted.

8. The process chamber according to claim 7, characterized in that, It also includes a fourth bushing (90), which is disposed in the first channel (602) and separates the first channel (602). The fourth bushing (90) is provided with a plurality of air equalization holes (902). The number of air equalization holes (902) on the side of the fourth bushing (90) closer to the exhaust port (101) is less than the number of air equalization holes (902) on the side farther away from the exhaust port (101).

9. The process chamber according to claim 7 or 8, characterized in that, It also includes the fifth bushing (100) and the sixth bushing (110). The fifth bushing (100) is located inside the cavity (10). The fifth bushing (100) has a second channel (1001) inside it. The axis of the second channel (1001) is parallel to the axis of the process chamber. The second channel (1001) is connected to the exhaust port (101). The fifth bushing (100) has a first step (1002) on its outer side. The sixth bushing (110) is disposed inside the cavity (10). The sixth bushing (110) has a third channel, the axis of which is perpendicular to the axis of the process chamber. The third channel connects the first channel (602) and the second channel (1001). The inlet end of the sixth bushing (110) is provided with a first connecting part (11011), and the outlet end of the sixth bushing (110) is provided with a first embedding part (110311). The first connecting part (11011) is located inside the first channel (602), and the first connecting part (11011) abuts against the inner wall of the third bushing (60). The first embedding part (110311) is perpendicular to the axis of the third channel. The first embedding part (110311) is adapted to the first step part (1002), and the first embedding part (110311) abuts between the first step part (1002) and the side wall of the cavity (10).

10. The process chamber according to claim 9, characterized in that, The sixth bushing (110) includes: The first sub-blade (1101) is provided with the first connecting portion (11011) and the second insert portion (110121) extending toward the fifth bushing (100). The second sub-shroud (1102) is fitted onto the first sub-shroud (1101). The second sub-shroud (1102) has a second stepped portion (11023) adapted to the second embedded portion (110121), a second tube portion (11022) extending toward the fifth shroud (100), and a third stepped portion (11024) formed on the outside of the second tube portion (11022). The second stepped portion (11023) abuts against the second embedded portion (110121) and the side wall of the cavity (10). The third sub-shroud (1103) is provided with the first embedding part (110311), the third tube part (11032) sleeved on the second tube part (11022), and the third embedding part (110321) adapted to the third step part (11024). The third embedding part (110321) abuts against the third step part (11024) and the side wall of the cavity (10).

11. The process chamber according to claim 9 or 10, characterized in that, It also includes the seventh bushing (120) and the eighth bushing (130); The seventh bushing (120) is disposed inside the cavity (10) and fitted onto the fifth bushing (100). The fifth bushing (100) is provided with a fourth embedding part (1003). The seventh bushing (120) is provided with a fourth channel (12011) communicating with the first outlet of the second channel (1001) and a fourth step part (1203) adapted to the fourth embedding part (1003). The fourth step part (1203) abuts against the fourth embedding part (1003) and the side wall of the cavity (10). The eighth bushing (130) is located inside the cavity (10). The eighth bushing (130) has a fifth channel (13021) inside. The axis of the fifth channel (13021) is perpendicular to the axis of the process chamber. The fifth channel (13021) connects to the second channel (1001). The inlet end of the eighth bushing (130) has a fifth embedding part (13011). The fifth embedding part (13011) abuts against the fourth embedding part (1003) and the side wall of the cavity (10).

12. A semiconductor device, characterized in that, include: The process chamber as described in any one of claims 1-11; and a chuck (140), which is located inside the cavity (10).

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