Evaporation source, evaporation apparatus and evaporation method

Abstract

The application discloses an evaporation source, an evaporation device and an evaporation method. The evaporation device comprises a process chamber and an evaporation source. A carrier is arranged in the process chamber and used for carrying a substrate to be evaporated. The evaporation source is arranged in the process chamber and comprises a crucible, a first heating device and a spraying structure. The crucible comprises a reaction chamber used for containing evaporation materials. The first heating device is used for heating the crucible or the evaporation materials. The spraying structure is communicated with the reaction chamber and arranged towards the substrate. The spraying structure comprises a crucible cover, a first nozzle and at least two second nozzles. The crucible cover is arranged on the crucible and protrudes towards the substrate. The first nozzle and each second nozzle are arranged on one side of the crucible cover towards the substrate. The plurality of second nozzles are arranged around the circumferential side of the first nozzle. The spraying range of the first nozzle and the spraying range of the second nozzle are arranged differently.

Description

Technical Field

[0001] This application belongs to the field of display device technology, and particularly relates to an evaporation source, evaporation equipment and evaporation method. Background Technology

[0002] Evaporation deposition is a technology that uses heating to evaporate and vaporize materials, and then guides gaseous particles to deposit on the surface of a substrate to form a thin film. It is widely used in the preparation of key structures such as light-emitting layers, organic functional layers, and encapsulation layers in display panels.

[0003] However, with the iteration of display panel technology, the precision of array substrate manufacturing process has been improved to the micron / nanometer level. However, due to factors such as the difference in diffusion path of vaporized particles and the uneven distribution of substrate surface energy, the thickness and composition uniformity of the vapor-deposited film layer need to be continuously improved to match the requirements of high-precision process. Summary of the Invention

[0004] This application provides an evaporation source, evaporation equipment, and evaporation method, which can improve the uniformity of the evaporated film layer to improve the display quality of the display device.

[0005] In a first aspect, embodiments of this application provide a vapor deposition apparatus for preparing an array substrate for a display panel. The vapor deposition apparatus includes a process chamber and an evaporation source. A stage is disposed within the process chamber to support the substrate to be vapor-deposited. The evaporation source is disposed within the process chamber and includes a crucible, a first heating device, and a spraying structure. The crucible includes a reaction chamber for holding vapor deposition materials. The first heating device is used to heat the crucible or to heat the vapor deposition materials. The spraying structure is connected to the reaction chamber and is disposed facing the substrate. The spraying structure includes a crucible cover, a first nozzle, and at least two second nozzles. The crucible cover is disposed on the crucible and protrudes towards the substrate. The first nozzle and each of the second nozzles are disposed on the side of the crucible cover facing the substrate. The plurality of second nozzles are arranged around the periphery of the first nozzle. The spraying range of the first nozzle and the spraying range of the second nozzles are distinguished.

[0006] In some alternative embodiments, the crucible lid has a curved structure that protrudes towards the substrate.

[0007] In some alternative embodiments, the surface structure is arranged linearly symmetrically about the first direction.

[0008] In some alternative embodiments, the curved surface structure is arranged symmetrically about the second direction, and the curved surface structure is hemispherical or semi-ellipsoidal.

[0009] In some alternative embodiments, the second nozzles are arranged in a circular array at equal intervals around the first nozzle.

[0010] In some alternative embodiments, the axis of the second nozzle is inclined relative to the axis of the first nozzle.

[0011] In some alternative embodiments, the spray range of each second nozzle is greater than that of the first nozzle.

[0012] In some alternative embodiments, the nozzle diameter of the second nozzle is larger than that of the first nozzle, and / or the distance between the second nozzle and the stage is greater than the distance between the first nozzle and the stage.

[0013] In some alternative embodiments, the spraying structure further includes a first shielding plate disposed between the first nozzle and the second nozzle, wherein the distance between the first shielding plate and the stage is less than the distance between the second nozzle and the stage.

[0014] In some alternative embodiments, the first shielding plates are arranged in a ring array centered on the first nozzle.

[0015] In some alternative embodiments, the distance between the first shielding plate and the stage is less than the distance between the first nozzle and the stage.

[0016] In some alternative embodiments, the spray structure further includes at least two third nozzles, arranged in a circular array at equal intervals around the first nozzle.

[0017] In some alternative embodiments, the axis of the third nozzle is inclined relative to the axis of the first nozzle, and the inclination angle of the third nozzle is greater than that of the second nozzle.

[0018] In some alternative embodiments, the number of third nozzles is greater than the number of second nozzles, and / or the spray range of the third nozzles is greater than the spray range of the second nozzles.

[0019] In some alternative embodiments, the orthographic projections of each third nozzle on the platform are staggered with the orthographic projections of each second nozzle on the platform.

[0020] In some alternative embodiments, the orthographic projections of each third nozzle on the platform do not overlap with the orthographic projections of each second nozzle on the platform.

[0021] In some alternative embodiments, the spraying structure further includes at least two fourth nozzles, arranged in a circular array at equal intervals around the first nozzle.

[0022] In some alternative embodiments, the axis of the fourth nozzle is inclined relative to the axis of the first nozzle, and the inclination angle of the fourth nozzle is greater than that of the third nozzle.

[0023] In some alternative embodiments, the number of fourth nozzles is greater than the number of third nozzles, and / or the spray range of the fourth nozzles is greater than the spray range of the third nozzles.

[0024] In some alternative embodiments, the distance between the fourth nozzle and the third nozzle is less than the distance between the third nozzle and the second nozzle in the vertical direction.

[0025] In some alternative embodiments, the distance between the fourth nozzle and the third nozzle is less than the distance between the third nozzle and the second nozzle in a horizontal plane parallel to the stage.

[0026] Secondly, embodiments of this application provide an evaporation source, which includes a crucible, a first heating device, and a spraying structure. The crucible includes a reaction chamber for holding vapor deposition materials. The first heating device is used to heat the crucible or to heat the vapor deposition materials. The spraying structure is connected to the reaction chamber and disposed away from the reaction chamber. The spraying structure includes a crucible cover, a first nozzle, and at least two second nozzles. The crucible cover is disposed on the crucible and recessed away from the reaction chamber. The first nozzle and each of the second nozzles are disposed on the side of the crucible cover away from the reaction chamber. The multiple second nozzles are arranged around the periphery of the first nozzle, and the spraying range of the first nozzle and the spraying range of the second nozzles are distinguished.

[0027] Thirdly, embodiments of this application provide a vapor deposition method for preparing an array substrate for a display panel. The vapor deposition method includes:

[0028] The second nozzle is opened, allowing gaseous vapor deposition material to be deposited onto the substrate surface through the second nozzle;

[0029] After a first preset time interval, the first nozzle is opened, allowing the gaseous vapor deposition material to be deposited onto the substrate surface simultaneously through the first and second nozzles.

[0030] The vapor deposition apparatus provided in this application improves the spraying structure to optimize the distribution of vapor deposition material sprayed onto the substrate. Specifically, the spraying structure features a crucible lid that protrudes towards the substrate to shorten the distance between the evaporation source and the substrate, thereby increasing the deposition rate and reducing material diffusion. The spraying structure includes a first nozzle and multiple second nozzles arranged in a ring array around the outer edge of the first nozzle to improve the efficiency of the vapor deposition process. It is understood that because the spraying structure protrudes towards the substrate, the distances from the first and second nozzles to the substrate are different. Therefore, this application distinguishes the spraying ranges of the first and second nozzles to make the film deposited on the substrate surface via the first nozzle and the film deposited on the substrate surface via the second nozzle more uniform. Attached Figure Description

[0031] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiments below. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0032] Figure 1 This is a schematic diagram of the vapor deposition equipment according to some embodiments of this application;

[0033] Figure 2 for Figure 1 A schematic diagram of the spray structure in the vapor deposition equipment shown.

[0034] Figure 3 This is a schematic diagram of the arrangement of the spray structure according to an embodiment of this application;

[0035] Figure 4 This is a schematic diagram of the arrangement of the spray structure according to another embodiment of this application;

[0036] Figure 5 This is a schematic diagram of the arrangement of the spray structure according to another embodiment of this application;

[0037] Figure 6 This is a schematic flowchart of a vapor deposition method according to an embodiment of this application.

[0038] The accompanying drawings may not be drawn to scale.

[0039] The reference numerals in the detailed embodiments are as follows:

[0040] 100. Process chamber; 110. Stage; 111. Substrate to be vapor-deposited;

[0041] 200, Evaporation source; 210, Crucible; 220, Spray structure; 221, Crucible lid; 2221, First nozzle; 2222, Second nozzle; 2223, Third nozzle; 2224, Fourth nozzle. Detailed Implementation

[0042] The embodiments of the technical solution of this application will now be described in detail with reference to the accompanying drawings. These embodiments are only used to more clearly illustrate the technical solution of this application and are therefore merely examples, and should not be used to limit the scope of protection of this application.

[0043] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0044] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined.

[0045] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0046] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0047] In the description of the embodiments of this application, the term "multiple" refers to two or more (including two), similarly, "multiple sets" refers to two or more (including two sets), and "multiple pieces" refers to two or more (including two pieces).

[0048] In the description of the embodiments of this application, the technical terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application.

[0049] In the description of the embodiments of this application, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0050] Evaporation deposition is a technology that uses heating to evaporate and vaporize materials, and then guides gaseous particles to deposit on the surface of a substrate to form a thin film. It is widely used in the preparation of key structures such as light-emitting layers, organic functional layers, and encapsulation layers in display panels.

[0051] As a key component of the vapor deposition process, the geometry, spray angle, and spray range of the vapor deposition nozzle directly affect the extent, thickness, and compositional uniformity of the resulting vapor-deposited film. Especially in applications requiring high process precision, such as the fabrication of the light-emitting layer in display panels, the uneven vapor distribution and limited spray range of a single vapor deposition nozzle significantly restrict the process quality and deposition efficiency of the vapor-deposited film.

[0052] To address the problems of existing technologies, embodiments of this application provide an evaporation source, evaporation equipment, and evaporation method, which can improve the uniformity of the evaporated film layer, thereby enhancing the product quality of array substrates and display panels. The evaporation equipment provided in this application embodiment is described below.

[0053] Please refer to the following: Figures 1 to 5 , Figure 1 This is a schematic diagram of the vapor deposition equipment according to some embodiments of this application; Figure 2 for Figure 1 A schematic diagram of the spray structure in the vapor deposition equipment shown. Figure 3 This is a schematic diagram of the arrangement of the spray structure according to an embodiment of this application; Figure 4 This is a schematic diagram of the arrangement of the spray structure according to another embodiment of this application; Figure 5 This is a schematic diagram of the arrangement of the spray structure according to another embodiment of this application.

[0054] In a first aspect, embodiments of this application provide a vapor deposition apparatus for preparing an array substrate for a display panel. The vapor deposition apparatus includes a process chamber 100 and an evaporation source 200. A stage 110 is disposed within the process chamber 100, which is used to support the substrate 111 to be vapor-deposited. The evaporation source 200 is disposed within the process chamber 100 and includes a crucible 210, a first heating device, and a spray structure 220. The crucible 210 includes a reaction chamber for holding vapor deposition materials. The first heating device is used to heat the crucible 210 or to heat the vapor deposition materials. The spray structure 220 is connected to the reaction chamber and is disposed facing the substrate. The spray structure 220 includes a crucible cover 221, a first nozzle 2221, and a second nozzle 2222. The crucible cover 221 is disposed on the crucible 210 and protrudes towards the substrate. The first nozzle 2221 and the second nozzle 2222 are disposed on the side of the crucible cover 221 facing the substrate.

[0055] It is understood that the evaporation source 200 is positioned facing the stage 110 so that the vapor deposition material can be sprayed onto the surface of the substrate 111 to be vaporized to achieve thin film deposition. Optionally, in some embodiments, the evaporation source 200 is positioned above the stage 110, and a flow channel is provided between the spray structure 220 and the reaction chamber of the crucible 210 to change the flow direction of the gaseous vapor deposition material, and the vapor deposition material is sprayed downwards onto the surface of the substrate 111 to complete thin film deposition; in other embodiments, the substrate 111 to be vaporized is fixed above the evaporation source 200, and the vapor deposition material formed by evaporation floats directly upwards and adheres to the surface of the substrate 111 to complete thin film deposition.

[0056] It is understood that this application makes an improved design to the vapor deposition nozzle of the vapor deposition equipment. On the one hand, by reducing the distance between the vapor deposition nozzle and the substrate by protruding the crucible cover 221 toward the substrate, it helps to control the diffusion of the vapor deposition material and limit the spray range. On the other hand, the crucible cover 221 is provided with a first nozzle 2221 and a second nozzle 2222. The first nozzle 2221 and the second nozzle 2222 can spray vapor deposition material at the same time to improve the deposition rate of the vapor deposition film and improve the economy of the vapor deposition equipment.

[0057] Specifically, please refer to Figure 3 At least two second nozzles 2222 are provided, and multiple second nozzles 2222 are arranged around the periphery of the first nozzle 2221. The spray range of the first nozzle 2221 and the spray range of the second nozzle 2222 are set differently.

[0058] Therefore, due to the convex shape of the crucible lid 221, the distance between the first nozzle 2221 and the substrate differs from the distance between the second nozzle 2222 and the substrate, resulting in a difference in the spray range of the first nozzle 2221 and the second nozzle 2222. It can be understood that when the first nozzle 2221 sprays, the density of the vapor-deposited material in the center is higher, while the density of the vapor-deposited material at the edges is lower due to its diffusion tendency. The second nozzle 2222, arranged around the first nozzle 2221, can supplement the lower-density edge areas, making the thickness and density of the vapor-deposited film layer formed by the evaporation source 200 more uniform. Furthermore, the vapor deposition apparatus provided in this embodiment also distinguishes the spray ranges of the first nozzle 2221 and the second nozzle 2222 to avoid overlap between the central area of ​​the first nozzle 2221 and the edge area of ​​the second nozzle 2222, and vice versa, thereby improving the uniformity of the vapor-deposited film layer.

[0059] Optionally, the vapor deposition equipment may also include a frame, power supply, and control system, as well as other device structures or components to assist in the operation of the evaporation source 200.

[0060] For example, the frame can be used to support and protect the process chamber 100, or a portion of the frame can be used to enclose and form the process chamber 100 to accommodate the array substrate of the display panel in the preparation state during the operation of the vapor deposition equipment. The process chamber 100 is used to limit the interference of external impurities on the array substrate of the display panel in the preparation state, and also makes it difficult for the vapor deposition material to leak into the external environment, thereby improving the working reliability of the vapor deposition equipment.

[0061] The power source can be used to provide electrical energy to the evaporation source 200. For example, the power source can provide electrical energy to the evaporation source 200 to drive the evaporation source 200 to evaporate and spray out the vapor-deposited material. As another example, the power source can also provide electrical energy to the evaporation source 200 to drive the evaporation source 200 to move in a specified direction.

[0062] The control system can be used to control the operation of the evaporation source 200. For example, the control system can be used to control the turning on and off of the evaporation source 200, and can also be used to control the vapor deposition temperature of the first heating device to adjust the diffusion rate of the vapor deposition material. As another example, the control system can be used to control the power supply to turn on or off, thereby driving the evaporation source 200 to move or stop in a specified direction.

[0063] According to some embodiments of this application, the crucible lid 221 has a curved structure that protrudes towards the substrate.

[0064] Optionally, the spray direction of the first nozzle 2221 is set perpendicular to the crucible cover 221.

[0065] Optionally, the spraying direction of the second nozzle 2222 is perpendicular to the crucible lid. Since the second nozzle 2222 and the first nozzle 2221 are located at different positions on the crucible lid, the spraying direction of the second nozzle 2222 and the spraying direction of the first nozzle 2221 form at least an inclined angle to further distinguish the spraying range of the first nozzle 2221 from the spraying range of the second nozzle 2222. For example, the edge regions of the first nozzle 2221 and the edge regions of the second nozzle 2222 overlap, forming a vapor-deposited film layer with a density approaching that of the central region of the first nozzle 2221.

[0066] Optionally, in some embodiments, the first nozzle 2221 and the second nozzle 2222 have the same length; in other embodiments, the length of the first nozzle 2221 is less than the length of the second nozzle 2222, or the length of the first nozzle 2221 is greater than the length of the second nozzle 2222. It is understood that length refers to the dimension of the structure of the first nozzle 2221 or the second nozzle 2222 protruding from the crucible lid.

[0067] Therefore, the curved crucible lid can further increase the distance between the first nozzle 2221 and the second nozzle 2222, thereby reducing the probability that the central region of the spray range of one of the first nozzle 2221 and the edge region of the spray range of the other, and improving the uniformity of the vapor-deposited film.

[0068] According to some embodiments of this application, the curved surface structure is arranged linearly symmetrically about a first direction.

[0069] Optionally, the first direction is parallel to the length direction of the substrate 111 to be deposited. Specifically, in some embodiments, when the substrate 111 to be deposited is rectangular, the length direction refers to the direction of the long side of the rectangular substrate 111; in other embodiments, when the substrate 111 to be deposited is square, the length direction refers to any side length of the square substrate 111. It is understood that the first direction can also be perpendicular to the length direction of the substrate 111 to be deposited.

[0070] Optionally, the first nozzle 2221 is located in the first direction, and a plurality of second nozzles 2222 are arranged linearly symmetrically about the first direction.

[0071] As a result, the spraying areas of the plurality of second nozzles 2222 arranged on both sides of the first nozzle 2221 along the first direction are symmetrically distributed, thereby improving the uniformity of the vapor-deposited film layer formed by the first nozzle 2221 and the plurality of second nozzles 2222.

[0072] According to some embodiments of this application, the curved surface structure is arranged linearly symmetrically about a second direction.

[0073] Optionally, the curved surface structure is configured in a spherical shape. Specifically, the curved surface structure is configured to correspond to the shape of the opening of the reaction chamber of crucible 210. For example, the curved surface structure is configured in a hemispherical shape, or in a quarter-sphere shape.

[0074] It is understandable that a spherical structure refers to a curved surface structure where the distance from any point to its intended center is equal. In actual manufacturing, due to limitations such as machining accuracy, curved surface structures may also exhibit an approximate spherical shape.

[0075] Optionally, the curved surface structure is arranged in an ellipsoidal shape, including either a rotational ellipsoid or a triaxial ellipsoid. Specifically, the curved surface structure is arranged to correspond to the opening shape of the reaction chamber of crucible 210. For example, the curved surface structure is arranged in a semi-ellipsoidal shape, or in a quarter-ellipsoidal shape.

[0076] It is understandable that, due to possible errors in the actual manufacturing process, the curved surface structure may also have an approximately ellipsoidal shape.

[0077] Optionally, the curved surface structure can also be configured as a hyperboloid or paraboloid, and simultaneously have two axes of symmetry in the first and second directions.

[0078] Therefore, each second nozzle 2222 can be symmetrically arranged with respect to both the first and second directions, thereby reducing the overlap between the central regions of the spray range of each second nozzle 2222 and improving the uniformity of the vapor-deposited film layer.

[0079] Optionally, please refer to Figure 3 The second nozzles 2222 are arranged in a rectangular array around the first nozzle 2221, wherein the geometric center of the rectangular array overlaps with the geometric center of the curved surface structure. For example, the curved surface structure is spherical, and the plurality of second nozzles 2222 are arranged in a square array; or, the curved surface structure is ellipsoidal, and the plurality of second nozzles 2222 are arranged in a rectangular array.

[0080] According to some embodiments of this application, with the first nozzle 2221 as the center, the second nozzles 2222 are arranged in a ring array at equal intervals.

[0081] Specifically, please refer to Figure 4 The second nozzle 2222 has 5 nozzles that are evenly spaced around the periphery of the first nozzle 2221.

[0082] Optionally, taking the included angle between the orthographic projections of the second nozzle 2222 on the substrate 111 to be vaporized as an example, the included angle between two adjacent second nozzles 2222 is one of 15 degrees, 22.5 degrees, 30 degrees, 37.5 degrees, 45 degrees, 52.5 degrees, 60 degrees, 67.5 degrees, 75 degrees, 82.5 degrees, and 90 degrees.

[0083] Specifically, the ring shape of the ring array is set in accordance with the crucible lid. For example, when the crucible lid is a spherical structure, the multiple second nozzles 2222 are arranged in a circular ring array; when the crucible lid is an ellipsoidal structure, the multiple second nozzles 2222 are arranged in an elliptical ring array; when the crucible lid is a hyperboloid or other parabolic structure, the multiple second nozzles 2222 are correspondingly arranged in an elliptical ring array.

[0084] It is understandable that, under the premise that the spray range of a single second nozzle 2222 is the same, the smaller the distance between two adjacent second nozzles 2222 and the denser the second nozzles 2222 are distributed around the first nozzle 2221, the larger the overlap area of ​​the edge region of the spray range of two adjacent second nozzles 2222, so that the density of the vapor-deposited material in the overlapping region is closer to the density of the vapor-deposited material in the central region of the first nozzle 2221, thereby improving the uniformity of the vapor-deposited film layer.

[0085] Therefore, the distance between any two adjacent second nozzles 2222 along the circumference of the first nozzle 2221 is equal, which is beneficial to control the spray range of each second nozzle 2222 to adjust the spray range of the spray structure 220.

[0086] According to some embodiments of this application, the axis of the second nozzle 2222 is inclined relative to the axis of the first nozzle 2221.

[0087] Optionally, the axis of the second nozzle 2222 is set perpendicular to the curved surface structure on which it is located, and the axis of the first nozzle 2221 is set perpendicular to the curved surface structure on which it is located.

[0088] For example, suppose the spraying range of the second nozzle 2222 on the substrate 111 to be deposited is a circular central region and two smaller and larger ring regions sequentially nested outside the circular central region. When the second nozzle 2222 is tilted towards the first nozzle 2221, the edge region of the spraying range of the first nozzle 2221 overlaps with the smaller ring region of the spraying range of the second nozzle 2222, and the central region of the spraying range of the first nozzle 2221 overlaps with the larger ring region of the spraying range of the second nozzle 2222. When the second nozzle 2222 is tilted away from the first nozzle 2221, the edge region of the spraying range of the first nozzle 2221 overlaps with the larger ring region of the spraying range of the second nozzle 2222. Thus, by adjusting the tilt angle between the axis of the second nozzle 2222 and the axis of the first nozzle 2221, the overlapping area of ​​the spraying ranges of the first nozzle 2221 and the second nozzle 2222 can be adjusted accordingly, thereby achieving fine control over the thickness and compositional uniformity of the deposited film.

[0089] Furthermore, when the second nozzle 2222 tilts towards the direction closer to the first nozzle 2221, the overlapping area between the spray ranges of two adjacent second nozzles 2222 will also increase accordingly. Therefore, the vapor-deposited film layer has a structure formed by the edge regions of the spray ranges of two adjacent second nozzles 2222 and the edge regions of the spray range of the first nozzle 2221 overlapping three layers. This vapor-deposited film layer formed by the overlapping of multiple sparse vapor-deposited materials is more conducive to improving the process accuracy of the corresponding structure of the display panel.

[0090] According to some embodiments of this application, the spray range of each second nozzle 2222 is greater than the spray range of the first nozzle 2221.

[0091] Optionally, the nozzle diameter of the first nozzle 2221 is smaller than the nozzle diameter of the second nozzle 2222.

[0092] Optionally, the distance between the first nozzle 2221 and the substrate 111 to be vaporized is less than the distance between the second nozzle 2222 and the substrate 111 to be vaporized.

[0093] Optionally, the angle between the axis of the first nozzle 2221 and the substrate 111 to be vaporized is greater than the angle between the axis of the second nozzle 2222 and the substrate 111 to be vaporized.

[0094] It is understandable that the above conditions can be implemented individually, or in any combination of two or three.

[0095] Therefore, the density of the vapor-deposited material within the spray range of the second nozzle 2222 is less than that within the spray range of the first nozzle 2221, reducing the possibility of local thickening defects in the vapor-deposited film caused by the overlap of the spray ranges of two adjacent second nozzles 2222.

[0096] According to some embodiments of this application, the spray structure 220 further includes a first shielding plate, which is disposed between the first nozzle 2221 and the second nozzle 2222, and the distance between the first shielding plate and the stage 110 is less than the distance between the second nozzle 2222 and the stage 110.

[0097] Optionally, along the extension direction of the curved structure, the distance between the first shielding plate and the first nozzle 2221 is equal to the distance between the first shielding plate and the second nozzle 2222.

[0098] Optionally, the distance between the first shielding plate and the stage 110 is smaller than the distance between the first nozzle 2221 and the stage 110, so that the first shielding plate can simultaneously block the vapor deposition material sprayed from the first nozzle 2221 and the vapor deposition material sprayed from the second nozzle 2222, thereby controlling the overlapping area between the spray range of the first nozzle 2221 and the spray range of the second nozzle 2222 to adjust the thickness and composition uniformity of the vapor deposition film.

[0099] Optionally, the first shielding plate is disposed at an angle relative to the substrate 111 to be vapor-deposited. For example, the angle between the first shielding plate and the substrate 111 to be vapor-deposited is smaller than the angle between the first nozzle 2221 and the substrate 111 to be vapor-deposited, but larger than the angle between the second nozzle 2222 and the substrate 111 to be vapor-deposited.

[0100] Alternatively, the first shielding plate is disposed perpendicular to the curved surface structure region in which it is located.

[0101] Thus, the first shielding plate can adjust the spray range of the first nozzle 2221 and the second nozzle 2222 on both sides of it by blocking the diffusion of the gaseous vapor deposition material, thereby adjusting the vapor deposition film layer formed by the spray structure 220.

[0102] According to some embodiments of this application, the first shielding plate is arranged in a ring array with the first nozzle 2221 as the center.

[0103] Optionally, the first shielding plate is arranged in a circular structure between the first nozzle 2221 and the second nozzle 2222.

[0104] Optionally, multiple first shielding plates are provided, and the multiple first shielding plates are arranged at intervals around the first nozzle 2221.

[0105] Further optionally, the number of first shielding plates is the same as the number of second nozzles 2222 and they are arranged in a one-to-one correspondence. For example, along the circumferential direction of the first nozzle 2221, the first shielding plates and the second shielding plates are arranged alternately, or, along the radial direction of the annular array of second nozzles 2222, the first shielding plate is disposed between the first nozzle 2221 and the second nozzle 2222.

[0106] Thus, the first shielding plate can form a uniform shielding effect on the second nozzles 2222 distributed around the first nozzle 2221, thereby improving the thickness and compositional uniformity of the vapor-deposited film layer formed around the first nozzle 2221.

[0107] According to some embodiments of this application, the spray structure 220 further includes at least two third nozzles 2223, arranged in an array with the first nozzle 2221 as the center.

[0108] Optionally, please refer to Figure 3 Multiple third nozzles 2223 are arranged in a rectangular array around the second nozzle array 2222.

[0109] Optionally, please refer to Figure 4 Multiple third nozzles 2223 are arranged in a ring array around the second nozzle array 2222.

[0110] Alternatively, multiple third nozzles 2223 may be arranged at equal intervals.

[0111] It is understandable that the third nozzle 2223 can supplement the vapor deposition material in the edge area of ​​the spray range of the second nozzle 2222 to improve the uniformity of the vapor deposition film layer formed by the second nozzle 2222. Furthermore, the third nozzle 2223 can expand the spray range of the spray structure 220 to improve the process efficiency of the evaporation source 200.

[0112] According to some embodiments of this application, the axis of the third nozzle 2223 is inclined relative to the axis of the first nozzle 2221, and the inclination angle of the third nozzle 2223 is greater than the inclination angle of the second nozzle 2222.

[0113] Optionally, the third nozzle 2223 is positioned perpendicular to the curved surface area it is located in.

[0114] Please see Figure 2Let b be the angle difference between the third nozzle 2223 and the second nozzle 2222, and let a be the angle difference between the second nozzle 2222 and the first nozzle 2221. Optionally, b is less than a, or b is equal to a.

[0115] Therefore, the spray range of the third nozzle 2223 and the spray range of the second nozzle 2222 can be staggered as much as possible to reduce unintended overlap, which helps to control the quality of the vapor-deposited film.

[0116] According to some embodiments of this application, the number of third nozzles 2223 is greater than the number of second nozzles 2222.

[0117] According to some embodiments of this application, the spray range of the third nozzle 2223 is greater than that of the second nozzle 2222.

[0118] Optionally, the nozzle diameter of the third nozzle 2223 is larger than the nozzle diameter of the second nozzle 2222.

[0119] Therefore, the spray range of the third nozzle 2223 can be expanded to better fill the area on the outer periphery of the second nozzle 2222, thereby improving the process efficiency and the quality of the vapor-deposited film layer, and avoiding the appearance of areas on the substrate 111 that are not covered by the vapor-deposited material.

[0120] According to some embodiments of this application, the orthographic projections of each third nozzle 2223 on the stage 110 and the orthographic projections of each second nozzle 2222 on the stage 110 are arranged alternately.

[0121] Specifically, the orthographic projection of the center of any third nozzle 2223 onto the stage 110 does not overlap with the orthographic projection of the center of the second nozzle 2222 onto the stage 110.

[0122] Optionally, each second nozzle 2222 is not located between the first nozzle 2221 and any third nozzle 2223. Specifically, the center of any second nozzle 2222 is not located on the virtual line formed by connecting the center of the first nozzle 2221 and the center of any third nozzle 2223.

[0123] This allows the first nozzle 2221, the second nozzle 2222, and the third nozzle 2223 to be staggered as much as possible, thereby reducing interference between the vapor-deposited materials of adjacent nozzles.

[0124] Furthermore, according to some embodiments of this application, the orthographic projection of each third nozzle 2223 on the stage 110 does not overlap with the orthographic projection of each second nozzle 2222 on the stage 110.

[0125] This ensures that the central area of ​​the spray range of the second nozzle 2222 does not overlap with the central area of ​​the spray range of the third nozzle 2223, thereby avoiding the defect of local thickening of the vapor-deposited film layer.

[0126] According to some embodiments of this application, the spray structure 220 further includes at least two fourth nozzles 2224, arranged in an array with the first nozzle 2221 as the center.

[0127] Optionally, please refer to Figure 5 Multiple fourth nozzles 2224 are arranged in a ring array on the outer periphery of the third nozzle 2223.

[0128] Alternatively, multiple fourth nozzles 2224 may be arranged at equal intervals.

[0129] Optionally, a plurality of fourth nozzles 2224 are arranged in a rectangular array on the outer periphery of the third nozzle 2223.

[0130] Therefore, the fourth nozzle 2224 can complement the third nozzle 2223 to improve the uniformity of the vapor-deposited film and enhance the efficiency of the vapor deposition process.

[0131] According to some embodiments of this application, the axis of the fourth nozzle 2224 is inclined relative to the axis of the first nozzle 2221, and the inclination angle of the fourth nozzle 2224 is greater than the inclination angle of the third nozzle 2223.

[0132] Please see Figure 2 The angle difference between the fourth nozzle 2224 and the third nozzle 2223 is defined as c, and the angle difference between the third nozzle 2223 and the second nozzle 2222 is defined as b. Optionally, c is less than b, or c is equal to b. The spray structures 220 near the outer ring of the crucible cover 221 are arranged in a dense pattern to compensate for the defects of large diffusion range and thin gaseous particles of the vapor-deposited material caused by their distance from the substrate 111 to be vapor-deposited, thereby improving the uniformity of the vapor-deposited film composition.

[0133] According to some embodiments of this application, the number of fourth nozzles 2224 is greater than the number of third nozzles 2223.

[0134] According to some embodiments of this application, the spray range of the fourth nozzle 2224 is greater than that of the third nozzle 2223.

[0135] Optionally, the nozzle diameter of the fourth nozzle 2224 is larger than the nozzle diameter of the third nozzle 2223.

[0136] According to some embodiments of this application, in the vertical direction, the distance between the fourth nozzle 2224 and the third nozzle 2223 is less than the distance between the third nozzle 2223 and the second nozzle 2222.

[0137] According to some embodiments of this application, in a horizontal plane parallel to the stage 110, the distance between the fourth nozzle 2224 and the third nozzle 2223 is less than the distance between the third nozzle 2223 and the second nozzle 2222.

[0138] This avoids the defect of voids in the vapor-deposited film layer caused by areas not covered by the vapor-deposited material between the spray range of the third nozzle 2223 and the spray range of the fourth nozzle 2224.

[0139] According to some embodiments of this application, any two nozzles adjacent to each other in the first direction in the spray structure 220 are staggered in the second direction.

[0140] It is understood that the above-mentioned nozzles refer to all nozzles disposed on the crucible cover 221 and used to connect the reaction chamber and the substrate 111 to be vaporized, including the first nozzle 2221, the second nozzle 2222, the third nozzle 2223 and the fourth nozzle 2224.

[0141] This further reduces the overlap between the central areas of the spray range of each nozzle, which can lead to localized thickening defects in the vapor-deposited film, thereby improving the quality of the vapor deposition process.

[0142] Secondly, embodiments of this application provide an evaporation source 200, which includes a crucible 210, a first heating device, and a spray structure 220. The crucible 210 includes a reaction chamber for holding vapor deposition materials. The first heating device is used to heat the crucible 210 or to heat the vapor deposition materials. The spray structure 220 is connected to the reaction chamber and disposed away from the reaction chamber. The spray structure 220 includes a crucible cover 221, a first nozzle 2221, and at least two second nozzles 2222. The crucible cover 221 is placed on the crucible 210 and recessed away from the reaction chamber. The first nozzle 2221 and each of the second nozzles 2222 are disposed on the side of the crucible cover 221 away from the reaction chamber. The multiple second nozzles 2222 are arranged around the periphery of the first nozzle 2221, and the spray range of the first nozzle 2221 and the spray range of the second nozzles 2222 are distinguished.

[0143] Thirdly, please refer to Figure 6 , Figure 6 This is a schematic flowchart of a vapor deposition method according to an embodiment of this application. This application provides a vapor deposition method for preparing an array substrate for a display panel. The vapor deposition method includes:

[0144] S100, Open the second nozzle 2222, so that the gaseous vapor deposition material is deposited onto the substrate surface through the second nozzle 2222;

[0145] S200. After a first preset time interval, the first nozzle 2221 is opened, so that the gaseous vapor deposition material is deposited onto the substrate surface simultaneously through the first nozzle 2221 and the second nozzle 2222.

[0146] Therefore, the second nozzle 2222, which is farther away from the substrate 111 to be vaporized, is turned on before the first nozzle 2221, which is closer to the substrate 111 to be vaporized, so that the vaporized material sprayed by the second nozzle 2222 can be deposited on the surface of the substrate 111 to be vaporized no later than the vaporized material sprayed by the first nozzle 2221, which helps to improve the uniformity of the vaporized film layer.

[0147] According to some embodiments of this application, the vapor deposition apparatus further includes a third nozzle 2223 that is farther away from the substrate 111 to be vapor deposited than the second nozzle 2222, and the third nozzle 2223 is turned on before the second nozzle 2222.

[0148] It is understandable that the third nozzle 2223, which is furthest from the substrate 111 to be vaporized, deposits a lower density of vaporized material onto the substrate 111. Therefore, prioritizing the activation of the third nozzle 2223 can improve the uniformity of the vaporized film by extending the deposition time of the low-density vaporized material.

[0149] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and not to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and they should all be covered within the scope of the claims and specification of this application. In particular, as long as there is no structural conflict, the various technical features mentioned in the embodiments can be combined in any way. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A vapor deposition apparatus, characterized in that, The evaporation equipment is used to fabricate an array substrate for a display panel and includes: A process chamber, wherein a stage is provided in the process chamber, the stage being used to support the substrate to be vapor-deposited; An evaporation source is disposed in the process chamber. The evaporation source includes a crucible, a first heating device, and a spraying structure. The crucible includes a reaction chamber for holding vapor deposition material. The first heating device is used to heat the crucible or to heat the vapor deposition material. The spraying structure is connected to the reaction chamber and is disposed toward the substrate. The spraying structure includes a crucible cover, a first nozzle, and at least two second nozzles. The crucible cover is disposed on the crucible and protrudes towards the substrate. The first nozzle and each of the second nozzles are disposed on the side of the crucible cover facing the substrate. A plurality of second nozzles are arranged around the periphery of the first nozzle. The spraying range of the first nozzle and the spraying range of the second nozzles are set differently.

2. The vapor deposition equipment according to claim 1, characterized in that, The crucible lid has a curved surface structure that bulges towards the substrate; Preferably, the curved surface structure is arranged linearly symmetrically about the first direction; Preferably, the curved surface structure is arranged symmetrically about the second direction, and the curved surface structure is hemispherical or semi-ellipsoidal.

3. The vapor deposition equipment according to claim 2, characterized in that, Centered on the first nozzle, the second nozzles are arranged in a circular array at equal intervals; Preferably, the axis of the second nozzle is inclined relative to the axis of the first nozzle; Preferably, the spray range of each of the second nozzles is greater than the spray range of the first nozzle; Preferably, the nozzle diameter of the second nozzle is greater than the nozzle diameter of the first nozzle, and / or the distance between the second nozzle and the platform is greater than the distance between the first nozzle and the platform.

4. The vapor deposition equipment according to claim 3, characterized in that, The spraying structure further includes a first shielding plate, which is disposed between the first nozzle and the second nozzle, and the distance between the first shielding plate and the platform is less than the distance between the second nozzle and the platform; Preferably, the first shielding plates are arranged in a ring array with the first nozzle as the center; Preferably, the distance between the first shielding plate and the platform is less than the distance between the first nozzle and the platform.

5. The vapor deposition equipment according to claim 2, characterized in that, The spraying structure also includes at least two third nozzles, with the first nozzle as the center, and the third nozzles are arranged in a ring array at equal intervals. Preferably, the axis of the third nozzle is inclined relative to the axis of the first nozzle, and the inclination angle of the third nozzle is greater than the inclination angle of the second nozzle. Preferably, the number of the third nozzles is greater than the number of the second nozzles, and / or the spray range of the third nozzles is greater than the spray range of the second nozzles.

6. The vapor deposition equipment according to claim 5, characterized in that, The orthographic projections of each of the third nozzles on the platform and the orthographic projections of each of the second nozzles on the platform are arranged alternately. Preferably, the orthographic projection of each of the third nozzles on the platform does not overlap with the orthographic projection of each of the second nozzles on the platform.

7. The vapor deposition equipment according to claim 5, characterized in that, The spraying structure also includes at least two fourth nozzles, with the first nozzle as the center, and the fourth nozzles are arranged in a ring array at equal intervals. Preferably, the axis of the fourth nozzle is inclined relative to the axis of the first nozzle, and the inclination angle of the fourth nozzle is greater than that of the third nozzle. Preferably, the number of fourth nozzles is greater than the number of third nozzles, and / or the spray range of the fourth nozzle is greater than the spray range of the third nozzle.

8. The vapor deposition equipment according to claim 7, characterized in that, In the vertical direction, the distance between the fourth nozzle and the third nozzle is less than the distance between the third nozzle and the second nozzle; Preferably, in a horizontal plane parallel to the platform, the distance between the fourth nozzle and the third nozzle is less than the distance between the third nozzle and the second nozzle.

9. An evaporation source, characterized in that, include: Crucible, including a reaction chamber for holding vapor-deposited materials; A first heating device is used to heat the crucible or to heat the vapor-deposited material; A spraying structure is connected to the reaction chamber and disposed away from the reaction chamber. The spraying structure includes a crucible cover, a first nozzle, and at least two second nozzles. The crucible cover is disposed on the crucible and recessed away from the reaction chamber. The first nozzle and each of the second nozzles are disposed on the side of the crucible cover away from the reaction chamber. The second nozzles are arranged in a ring array around the first nozzle, and the spray range of the first nozzle is set differently from that of the second nozzle.

10. A vapor deposition method for preparing an array substrate for a display panel, characterized in that, The vapor deposition method includes: The second nozzle is opened, allowing gaseous vapor deposition material to be deposited onto the substrate surface through the second nozzle; After a first preset time interval, the first nozzle is opened, allowing gaseous vapor deposition material to be deposited onto the substrate surface simultaneously through the first and second nozzles.

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