Evaporation crucible and evaporation device

Abstract

This application discloses a vapor deposition crucible and a vapor deposition apparatus. The vapor deposition crucible includes a crucible body, a crucible lid, and a first heating device. The first heating device heats the vapor deposition channel, ensuring that the vapor deposition material is continuously heated as it flows through the channel. This improves the problem of the vapor deposition material cooling and forming a film that adheres to the inner wall of the crucible opening or lid, clogging the opening, when it rises to the crucible opening or lid. The vapor deposition channel includes a first channel, a second channel, and a third channel. The second channel is smaller than the first and third channels, increasing the flow rate of the vapor deposition material as it flows through the second channel and accelerating its diffusion through the first channel. This improves the spraying effect of the vapor deposition material and reduces the likelihood of it adhering to the crucible opening or vapor deposition opening.

Description

Technical Field

[0001] This application relates to the field of vapor deposition technology, specifically to a vapor deposition crucible and vapor deposition apparatus. Background Technology

[0002] Organic light-emitting diodes (OLEDs) and flat panel displays based on light-emitting diodes (LEDs) are widely used in various consumer electronics products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body, and wide range of applications, becoming the mainstream of display devices.

[0003] Currently, one method for manufacturing organic light-emitting elements is the vapor deposition method, which involves sublimating a vapor deposition material and depositing it onto a substrate to form a thin film such as a light-emitting layer or a metal layer. A vapor deposition apparatus for forming a film on a substrate includes a substrate holder for holding the substrate, a crucible for containing the vapor deposition material, and a heater for heating the crucible. The crucible has an opening at the top, and the vapor deposition material inside the crucible, positioned below the substrate holder and heated by the heater, sublimates, forming a thin film on the substrate's film-forming surface facing the opening of the crucible.

[0004] However, vapor deposition materials can easily clog the vapor deposition openings. Summary of the Invention

[0005] This application provides a vapor deposition crucible and vapor deposition apparatus, which aim to improve the problem that vapor deposition materials easily clog the vapor deposition openings.

[0006] A first aspect of this application provides a vapor deposition crucible, comprising: a crucible body, the crucible body enclosing a receiving cavity and having a crucible opening communicating with the receiving cavity, the receiving cavity being used to contain vapor deposition material; a crucible lid, covering the crucible opening of the crucible body, the crucible lid enclosing a vapor deposition channel and having a vapor deposition opening communicating with the vapor deposition channel, the vapor deposition channel including a first channel, a second channel, and a third channel communicating with each other, the first channel connecting the second channel and the vapor deposition opening, the second channel connecting the first channel and the third channel, the third channel connecting the second channel and the receiving cavity, and in a direction perpendicular to the extension direction of the vapor deposition channel, the size of the first channel is larger than the size of the second channel, and the size of the second channel is smaller than the size of the third channel; and a first heating device located on the periphery of the vapor deposition channel for heating the vapor deposition material within the vapor deposition channel.

[0007] According to an embodiment of the first aspect of this application, in a direction perpendicular to the extension direction of the vapor deposition channel, the ratio of the size of the first channel to the size of the second channel is greater than 1 and less than or equal to 8.

[0008] According to any of the foregoing embodiments of the first aspect of this application, the size of the first channel is less than or equal to the size of the third channel in a direction perpendicular to the extension direction of the vapor deposition channel.

[0009] According to any of the foregoing embodiments of the first aspect of this application, a first heating device is disposed in the area corresponding to the second channel for heating the second channel.

[0010] According to any of the foregoing embodiments of the first aspect of this application, a first heating device is disposed in the area corresponding to the first channel and the second channel, for heating the first channel and the second channel.

[0011] According to any of the foregoing embodiments of the first aspect of this application, a first heating device is disposed in the regions corresponding to the first channel, the second channel, and the third channel, for heating the first channel, the second channel, and the third channel.

[0012] According to any of the foregoing embodiments of the first aspect of this application, the first heating device is embedded inside the crucible lid, or the first heating device is located on the side of the crucible lid away from the vapor deposition channel.

[0013] According to any of the foregoing embodiments of the first aspect of this application, it further includes: a second heating device located on the periphery of the crucible body for heating the crucible body.

[0014] According to any of the foregoing embodiments of the first aspect of this application, the heating temperature of the first heating device is greater than or equal to the heating temperature of the second heating device.

[0015] According to any of the foregoing embodiments of the first aspect of this application, the thermal conductivity of the material of the crucible lid is greater than or equal to the thermal conductivity of the material of the crucible body.

[0016] According to any of the foregoing embodiments of the first aspect of this application, the cross-sectional dimensions of the first channel tend to increase along the direction away from the receiving cavity.

[0017] According to any of the foregoing embodiments of the first aspect of this application, the cross-sectional dimensions of the third channel tend to decrease along the direction away from the receiving cavity.

[0018] According to any of the foregoing embodiments of the first aspect of this application, the first heating device includes a plurality of heaters disposed around the periphery of the vapor deposition channel.

[0019] An embodiment of the second aspect of this application provides a vapor deposition apparatus, which includes the vapor deposition crucible of any of the above embodiments.

[0020] According to an embodiment of the second aspect of this application, a plurality of vapor deposition crucibles are included, and the plurality of vapor deposition crucibles are arranged at intervals.

[0021] According to embodiments of this application, a vapor deposition crucible and vapor deposition apparatus are provided. The vapor deposition crucible includes a crucible body, a crucible lid, and a first heating device. The crucible body encloses a cavity to contain vapor deposition material. When the crucible body is heated, the vapor deposition material in the cavity sublimates and flows out through the crucible opening. A crucible lid is provided on the crucible body to form a heat barrier against the cavity, reducing heat loss and allowing the vapor deposition material to be fully heated and sublimated. The crucible lid includes a vapor deposition channel and a vapor deposition opening. After sublimation, the vapor deposition material enters the vapor deposition channel through the crucible opening and flows out through the vapor deposition opening. The first heating device heats the vapor deposition channel, ensuring that the vapor deposition material is continuously heated as it flows through the channel. This improves the problem that when the vapor deposition material rises to the crucible opening or the crucible lid, the temperature in that area is low, causing the material to cool and form a film that adheres to the inner wall of the opening or lid, blocking the opening. The vapor deposition channel includes a first channel, a second channel, and a third channel. The second channel is smaller than the first and third channels, which increases the flow rate of the vapor deposition material when it flows through the second channel and accelerates its diffusion through the first channel, thereby improving the spraying effect of the vapor deposition material and reducing the possibility of the vapor deposition material adhering to the crucible opening or the vapor deposition opening. Attached Figure Description

[0022] Other features, objects, and advantages of this application will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings, in which the same or similar reference numerals denote the same or similar features, and the drawings are not drawn to scale.

[0023] Figure 1 This is a partial cross-sectional schematic diagram of a vapor deposition crucible provided in an embodiment of this application;

[0024] Figure 2 This is a partial cross-sectional schematic diagram of the vapor deposition crucible in another embodiment;

[0025] Figure 3 This is a partial cross-sectional schematic diagram of the vapor deposition crucible in another embodiment;

[0026] Figure 4 This is a partial cross-sectional schematic diagram of the vapor deposition crucible in another embodiment;

[0027] Figure 5 This is a partial cross-sectional schematic diagram of the vapor deposition crucible in another embodiment;

[0028] Figure 6 This is a partial cross-sectional schematic diagram of the vapor deposition crucible in another embodiment;

[0029] Figure 7 This is a partial top view schematic diagram of a vapor deposition apparatus provided in an embodiment of this application.

[0030] Explanation of reference numerals in the attached figures:

[0031] 10. Evaporation crucible; 20. Evaporation apparatus;

[0032] 100. Crucible body; 110. Receiving cavity; 120. Crucible opening;

[0033] 200. Crucible lid; 210. Evaporation channel; 211. First channel; 212. Second channel; 213. Third channel; 220. Evaporation opening;

[0034] 300. First heating device; 310. Heater;

[0035] 400. Second heating device. Detailed Implementation

[0036] The features and exemplary embodiments of various aspects of this application will now be described in detail. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain this application and are not configured to limit this application. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples of this application.

[0037] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0038] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, that layer or region will be located "below" or "under" the other layer or region.

[0039] In OLED display panels, the organic functional layer is made using a vacuum thermal evaporation method. This involves placing organic materials in a crucible, heating the crucible in a vacuum environment, causing the organic materials to vaporize and be ejected upwards, thus depositing them onto a substrate with a lower temperature above. This process forms an organic functional layer with a thickness on the nanometer scale on the substrate.

[0040] A vapor deposition apparatus for forming a film on a substrate using vacuum vapor deposition includes a substrate holder for holding the substrate, a crucible for containing vapor deposition material, and a heater for heating the crucible. The crucible has an opening at the top, and the vapor deposition material inside the crucible, which is positioned below the substrate holder and heated by the heater, sublimates to form a thin film on the substrate surface facing the opening of the crucible.

[0041] Because the temperature near the crucible opening of the crucible body or the vapor deposition opening of the crucible lid is lower than the internal temperature of the containment cavity, the vapor deposition material is prone to condense and accumulate at the crucible opening of the crucible body or the vapor deposition opening of the crucible lid after sublimation, causing the crucible opening of the crucible body or the vapor deposition opening of the crucible lid to be blocked by the vapor deposition material, thus affecting the progress of the vapor deposition process.

[0042] Therefore, in order to solve the above problems, this application provides a vapor deposition crucible and a vapor deposition apparatus, which aims to improve the problem of the vapor deposition opening of the crucible body or the vapor deposition opening of the crucible cover being blocked by the vapor deposition material.

[0043] This application provides a vapor deposition crucible and a vapor deposition apparatus. The embodiments of the vapor deposition crucible and the vapor deposition apparatus will be described below with reference to the accompanying drawings.

[0044] Please see Figure 1 , Figure 1 This is a partial cross-sectional schematic diagram of a vapor deposition crucible provided in an embodiment of this application.

[0045] like Figure 1As shown, a first aspect of this application provides a vapor deposition crucible 10, comprising: a crucible body 100, the crucible body forming a receiving cavity 110 and having a crucible opening 120 communicating with the receiving cavity 110, the receiving cavity 110 being used to receive vapor deposition material; and a crucible lid 200, covering the crucible opening 120 of the crucible body, the crucible lid 200 forming a vapor deposition channel 210 and having a vapor deposition opening 220 communicating with the vapor deposition channel 210, the vapor deposition channel 210 including a first channel 211, a second channel 212, and a third channel 213 communicating with each other, the first channel... 211 is connected between the second channel 212 and the vapor deposition opening 220. The second channel 212 is connected between the first channel 211 and the third channel 213. The third channel 213 is connected between the second channel 212 and the receiving cavity 110. In the direction perpendicular to the extension direction of the vapor deposition channel 210, the size of the first channel 211 is larger than the size of the second channel 212, and the size of the second channel 212 is smaller than the size of the third channel 213. The first heating device 300 is located on the periphery of the vapor deposition channel 210 and is used to heat the vapor deposition material in the vapor deposition channel 210.

[0046] According to embodiments of this application, a vapor deposition crucible 10 and a vapor deposition apparatus 20 are used. The vapor deposition crucible 10 includes a crucible body 100, a crucible lid 200, and a first heating device 300. The crucible body 100 encloses a receiving cavity 110 for containing vapor deposition material. When the crucible body 100 is heated, the vapor deposition material in the receiving cavity 110 sublimates and flows out through the crucible opening 120. The crucible lid 200 is provided on the crucible body 100 to form a heat barrier against the receiving cavity 110, reducing heat loss within the receiving cavity 110 and allowing the vapor deposition material in the receiving cavity 110 to be fully heated and sublimated. The crucible lid 200 includes a vapor deposition channel 210 and a vapor deposition opening 220. After sublimation, the vapor deposition material enters the vapor deposition channel 210 through the crucible opening 120 and then flows out through the vapor deposition opening 220. The first heating device 300 heats the vapor deposition channel 210, ensuring that the vapor deposition material is continuously heated as it flows through the channel. This improves the situation where the temperature in the area of ​​the crucible opening 120 or crucible lid 200 is too low when the vapor deposition material rises to the crucible opening 120 or crucible lid 200, causing the material to cool and form a film that adheres to the inner wall of the crucible opening 120 or crucible lid 200, thus clogging the opening. The vapor deposition channel 210 includes a first channel 211, a second channel 212, and a third channel 213. The second channel 212 is smaller than the first channel 211 and the third channel 213, increasing the flow rate of the vapor deposition material as it flows through the second channel 212 and accelerating its diffusion through the first channel 211. This improves the spraying effect of the vapor deposition material and reduces the likelihood of it adhering to the crucible opening 120 or the vapor deposition opening 220.

[0047] The direction of extension of the vapor deposition channel 210 refers to the direction from the crucible body 100 to the crucible cover 200.

[0048] Along the direction perpendicular to the extension direction of the vapor deposition channel 210, the dimensions of the first channel 211, the second channel 212, and the third channel 213 refer to the cross-sectional dimensions (e.g., cross-sectional area) of the first channel 211, the second channel 212, and the third channel 213. For example, if the first channel 211, the second channel 212, and the third channel 213 are all circular channels, then the dimensions of the first channel 211, the second channel 212, and the third channel 213 are their inner diameters.

[0049] The size of the second channel 212 is smaller than the size of the first channel 211, meaning that the maximum size of the second channel 212 is smaller than the minimum size of the first channel 211. The size of the second channel 212 is smaller than the size of the third channel 213, meaning that the maximum size of the second channel 212 is smaller than the minimum size of the third channel 213.

[0050] The crucible body 100 can have various shapes. For example, the crucible body 100 can be a cylindrical container with a bottom that opens upwards. That is, the crucible body 100 encloses a crucible opening 120 with an upward-facing opening, allowing the vapor-deposited material layer to sublimate and flow out through the opening at the top, reaching the substrate surface to form a film. The crucible body 100 can also be any other shape known to those skilled in the art, and the embodiments of the present invention will not elaborate on or limit this.

[0051] The vapor deposition material is contained in the receiving cavity 110 of the crucible body 100. The vapor deposition material layer is a metal material used to form a metal film on the substrate, such as silver (Ag), magnesium (Mg), ytterbium (Yb), lithium fluoride (LiF), etc.

[0052] In some alternative embodiments, the ratio of the size of the first channel 211 to the size of the second channel 212 is greater than 1 and less than or equal to 8 in the direction perpendicular to the extension direction of the vapor deposition channel 210. For example, the ratio of the first channel 211 to the second channel 212 is 2, 3, 4, or 8.

[0053] In these optional embodiments, along the direction perpendicular to the extension direction of the evaporation channel 210, the ratio of the size of the first channel 211 to the size of the second channel 212 is greater than 1. This ensures that the size of the first channel 211 is larger than the size of the second channel 212, increasing the flow rate of the evaporation material as it flows through the second channel 212 and accelerating its diffusion through the first channel 211. This improves the spraying effect of the evaporation material and reduces the possibility of the evaporation material adhering to the crucible opening 120 or the evaporation opening 220. A ratio of the size of the first channel 211 to the size of the second channel 212 being less than or equal to 8 can mitigate the problem of poor evaporation effect due to an excessively large evaporation opening 220 in the crucible cover 200 caused by an excessively large first channel 211, or a problem of insufficient evaporation material flowing through the second channel 212 due to an excessively small second channel 212, resulting in reduced evaporation efficiency.

[0054] In some optional embodiments, the size of the first channel 211 is less than or equal to the size of the third channel 213 in the direction perpendicular to the extension direction of the vapor deposition channel 210. When the first channel 211 and the second channel 212 are variable diameter channels, the statement that the size of the first channel 211 is less than or equal to the size of the third channel 213 can be understood as the maximum size of the first channel 211 being less than or equal to the maximum size of the third channel 213.

[0055] In these alternative embodiments, the size of the first channel 211 is less than or equal to the size of the third channel 213 in the direction perpendicular to the extension direction of the vapor deposition channel 210. This can improve the problem that the vapor deposition opening 220 of the crucible cover 200 is too large and the vapor deposition effect is poor because the size of the first channel 211 is too large.

[0056] like Figure 1 As shown, in some optional embodiments, the first heating device 300 is disposed in the area corresponding to the second channel 212 for heating the second channel 212.

[0057] In these alternative embodiments, since the size of the second channel 212 is smaller than that of the first channel 211 and the third channel 213, the second channel 212 is the smallest and is most prone to blockage during the vapor deposition process. Therefore, the first heating device 300 is set in the area corresponding to the second channel 212 to heat the second channel 212, so that the vapor deposition material can be continuously heated when flowing through the second channel 212. This improves the problem that when the vapor deposition material rises to the second channel 212, the temperature in the area where the second channel 212 is located is low, causing the vapor deposition material to cool and form a film and adhere to the second channel 212, thus blocking the second channel 212.

[0058] The area corresponding to the first channel 211 is the area where the crucible lid 200 is located in the first channel 211. The area corresponding to the second channel 212 is the area where the crucible lid 200 is located in the second channel 212. The area corresponding to the third channel 213 is the area where the crucible lid 200 is located in the third channel 213.

[0059] Please see Figure 2 , Figure 2 This is a partial cross-sectional schematic diagram of the vapor deposition crucible in another embodiment.

[0060] like Figure 2 As shown, in some optional embodiments, a first heating device 300 is disposed in the region corresponding to the first channel 211 and the second channel 212 for heating the first channel 211 and the second channel 212.

[0061] In these optional embodiments, the first heating device 300 is disposed in the region corresponding to the first channel 211 and the second channel 212 to heat the first channel 211 and the second channel 212, so that the vapor-deposited material can be continuously heated when flowing through the first channel 211 and the second channel 212. This improves the problem that when the vapor-deposited material rises to the first channel 211 and the second channel 212, the temperature of the region where the first channel 211 and the second channel 212 are low, causing the vapor-deposited material to cool and form a film and adhere to the first channel 211 and the second channel 212, thus clogging the first channel 211 and the second channel 212.

[0062] In some optional embodiments, the first heating device 300 is disposed in the region corresponding to the third channel 213 and the second channel 212 for heating the third channel 213 and the second channel 212.

[0063] In these optional embodiments, the first heating device 300 is disposed in the region corresponding to the third channel 213 and the second channel 212 to heat the third channel 213 and the second channel 212, so that the vapor-deposited material can be continuously heated when flowing through the third channel 213 and the second channel 212. This improves the problem that when the vapor-deposited material rises to the third channel 213 and the second channel 212, the temperature of the region where the third channel 213 and the second channel 212 are low, causing the vapor-deposited material to cool and form a film and adhere to the third channel 213 and the second channel 212, thus clogging the third channel 213 and the second channel 212.

[0064] Please see Figure 3 , Figure 3 This is a partial cross-sectional schematic diagram of the vapor deposition crucible in another embodiment.

[0065] like Figure 3As shown, in some optional embodiments, the first heating device 300 is disposed in the region corresponding to the first channel 211, the second channel 212 and the third channel 213, for heating the first channel 211, the second channel 212 and the third channel 213.

[0066] In these optional embodiments, the first heating device 300 is disposed in the regions corresponding to the first channel 211, the second channel 212, and the third channel 213 to heat the first channel 211, the second channel 212, and the third channel 213. This allows the vapor-deposited material to be continuously heated as it flows through the first channel 211, the second channel 212, and the third channel 213. This improves the problem that when the vapor-deposited material rises to the first channel 211, the second channel 212, and the third channel 213, the temperature in the regions where the first channel 211, the second channel 212, and the third channel 213 is low, causing the vapor-deposited material to cool and form a film that adheres to the first channel 211, the second channel 212, and the third channel 213, thus clogging the first channel 211, the second channel 212, and the third channel 213.

[0067] Please see Figure 3 and Figure 4 , Figure 4 This is a partial cross-sectional schematic diagram of the vapor deposition crucible in another embodiment.

[0068] like Figure 3 and Figure 4 As shown, in some optional embodiments, the first heating device 300 is embedded inside the crucible lid 200, or the first heating device 300 is located on the side of the crucible lid 200 away from the vapor deposition channel 210.

[0069] In these optional embodiments, the first heating device 300 is disposed inside the crucible lid 200, directly heating the crucible lid 200 and thus the vapor deposition channel 210. This results in less heat loss and a better heating effect. Alternatively, the first heating device 300 can be located on the side of the crucible lid 200 away from the vapor deposition channel 210, i.e., on the outside of the crucible lid 200, thereby heating the lid. This external placement of the first heating device 300 simplifies installation and makes maintenance and replacement more convenient.

[0070] Please see Figure 5 , Figure 5 This is a partial cross-sectional schematic diagram of the vapor deposition crucible in another embodiment.

[0071] like Figure 5 As shown, in some optional embodiments, a second heating device 400 is also included, located on the periphery of the crucible body 100, for heating the crucible body 100.

[0072] In these optional embodiments, the second heating device 400 heats the crucible body 100 to raise the temperature inside the containment cavity 110. After the temperature reaches a certain level, the vapor deposition material inside the containment cavity 110 begins to sublimate and is deposited onto the substrate surface through the vapor deposition opening 220 via the first channel 211, the second channel 212, and the third channel 213 in sequence.

[0073] In some alternative embodiments, the heating temperature of the first heating device 300 is greater than or equal to the heating temperature of the second heating device 400.

[0074] In these optional embodiments, the heating temperature of the first heating device 300 is greater than that of the second heating device 400. On the one hand, this ensures that the vapor-deposited material can be continuously heated as it passes through the first channel 211, the second channel 212, and the third channel 213. This improves the problem that when the vapor-deposited material rises to the first channel 211, the second channel 212, and the third channel 213, the temperature in the areas where the first channel 211, the second channel 212, and the third channel 213 is low, causing the vapor-deposited material to cool and form a film and adhere to the first channel 211, the second channel 212, and the third channel 213, thus blocking the first channel 211, the second channel 212, and the third channel 213. On the other hand, the temperature inside the crucible lid 200 is higher than the temperature inside the containment cavity 110, so that when the vapor-deposited material sublimates and flows through the first channel 211, the second channel 212 and the third channel 213, the temperature rises further, thereby subjecting the vapor-deposited material to an upward force. The vapor-deposited material can quickly pass through the first channel 211, the second channel 212 and the third channel 213 and be ejected through the vapor deposition opening 220, resulting in better film formation on the substrate and reducing the possibility of blockage caused by solidification in the first channel 211, the second channel 212 and the third channel 213.

[0075] In some alternative embodiments, the thermal conductivity of the material of the crucible lid 200 is greater than or equal to the thermal conductivity of the material of the crucible body 100.

[0076] Thermal conductivity is the ability of a material to conduct heat, measured in watts per meter per Kelvin (W / (m·K)). It represents the amount of heat conducted per unit area of ​​material per unit time under a unit temperature gradient.

[0077] In these alternative embodiments, the crucible lid 200 has a higher thermal conductivity than the crucible body 100, meaning the crucible lid 200 has a stronger heat transfer capacity than the crucible body 100. Therefore, during the vapor deposition process, it is easier to heat the temperature within the vapor deposition channel 210 to a level greater than or equal to the temperature within the receiving cavity 110. This ensures that the vapor deposition material is continuously heated as it passes through the first channel 211, the second channel 212, and the third channel 213, mitigating the problem of the vapor deposition material cooling and forming a film that adheres to the first channel 211, the second channel 212, and the third channel 213, thus blocking the first channel 211, the second channel 212, and the third channel 213. On the other hand, the temperature inside the crucible lid 200 is higher than the temperature inside the containment cavity 110, so that when the vapor-deposited material sublimates and flows through the first channel 211, the second channel 212 and the third channel 213, the temperature rises further, thereby subjecting the vapor-deposited material to an upward force. The vapor-deposited material can quickly pass through the first channel 211, the second channel 212 and the third channel 213 and be ejected through the vapor deposition opening 220, resulting in better film formation on the substrate and reducing the possibility of blockage caused by solidification in the first channel 211, the second channel 212 and the third channel 213.

[0078] In some alternative embodiments, the cross-sectional dimensions of the first channel 211 tend to increase along the direction away from the receiving cavity 110.

[0079] In these alternative embodiments, the cross-sectional size of the first channel 211 tends to increase along the direction away from the receiving cavity 110. For example, the cross-sectional size of the first channel 211 gradually increases along the direction away from the receiving cavity 110. The first channel 211 is an expansion section along the direction away from the receiving cavity 110, which facilitates the deposition of vapor deposition material onto the substrate and improves the deposition effect.

[0080] In some alternative embodiments, the cross-sectional dimensions of the third channel 213 tend to decrease along the direction away from the receiving cavity 110.

[0081] In these alternative embodiments, the cross-sectional size of the third channel 213 tends to decrease along the direction away from the receiving cavity 110. For example, the cross-sectional size of the third channel 213 gradually decreases along the direction away from the receiving cavity 110. In the direction away from the receiving cavity 110, the third channel 213 is a contraction section, so that after the vapor-deposited material flows through the third channel 213 and the second channel 212, the channel pressure decreases and the flow rate gradually increases, reducing the possibility of the vapor-deposited material adhering to the third channel 213 and the second channel 212, and avoiding channel blockage.

[0082] In some alternative embodiments, the size of the second channel 212 decreases and then expands in the direction away from the receiving cavity 110, so that the second channel 212 includes both a contraction section and an expansion section, which is equivalent to the structure of a Venturi tube. After the vapor-deposited material sublimates and reaches the second channel 212, it can be accelerated, reducing the possibility of the vapor-deposited material adhering to the second channel 212 and avoiding clogging of the channel.

[0083] Optionally, the cross-sectional dimensions of the second channel 212 remain unchanged in the direction away from the receiving cavity 110, that is, the second channel 212 can be set as a channel of equal diameter, so that the flow rate of the entire second channel 212 is faster, reducing the possibility of the vapor deposition material adhering to the second channel 212 and avoiding clogging of the channel.

[0084] Optionally, the length of the second channel 212 is shorter than that of the first channel 211 in the direction away from the receiving cavity 110.

[0085] Optionally, the length of the second channel 212 is less than that of the third channel 213 in the direction away from the receiving cavity 110.

[0086] Please see Figure 6 , Figure 6 This is a partial cross-sectional schematic diagram of the vapor deposition crucible in another embodiment.

[0087] like Figure 6 As shown, in some optional embodiments, the first heating device 300 includes a plurality of heaters 310 disposed around the periphery of the vapor deposition channel 210.

[0088] In these alternative embodiments, multiple heaters 310 can selectively heat multiple locations to control the heating effect on the crucible lid 200, achieve uniform heating of the crucible lid 200, and improve the vapor deposition effect of the vapor deposition material.

[0089] Optionally, multiple heaters 310 may be disposed inside the crucible cover 200, or multiple heaters 310 may be disposed on the side of the crucible cover 200 away from the vapor deposition channel 210, or some heaters 310 may be disposed inside the crucible cover 200 and some heaters 310 may be disposed on the side of the crucible cover 200 away from the vapor deposition channel 210.

[0090] Optionally, the second heating device 400 includes a plurality of heaters 310 disposed around the crucible body 100. The plurality of heaters 310 can heat multiple locations in a targeted manner to control the heating effect on the crucible body 100, achieve uniform heating of the crucible body 100, and improve the vapor deposition effect of the vapor deposition material.

[0091] The heater 310 can be arranged in various ways. For example, the heater 310 can be located on the side of the crucible body 100, or it can be located on both the side and bottom surfaces of the crucible body 100. The number of heaters 310 can also be varied. For example, one or more heaters 310 can be located on the side of the crucible body 100, or one or more heaters 310 can be located on both the side and bottom surfaces of the crucible body 100. The goal is to achieve sufficient heating of the crucible body 100. Using multiple heaters 310 allows for independent control of each heater, resulting in better uniform heating of the crucible body 100.

[0092] In some optional embodiments, the heating temperature of the first heating device 300 is greater than or equal to the heating temperature of the second heating device 400, and the thermal conductivity of the material of the crucible lid 200 is greater than or equal to the thermal conductivity of the material of the crucible body 100.

[0093] In these optional embodiments, the crucible lid 200 has a higher thermal conductivity than the crucible body 100, meaning the crucible lid 200 has a stronger heat transfer capacity than the crucible body 100, and the heating temperature of the first heating device 300 is greater than or equal to the heating temperature of the second heating device 400. Therefore, during the vapor deposition process, it is easier to heat the temperature within the vapor deposition channel 210 to a level greater than or equal to the temperature within the receiving cavity 110. This ensures that the vapor deposition material is continuously heated as it passes through the first channel 211, the second channel 212, and the third channel 213, mitigating the problem of the vapor deposition material cooling and forming a film that adheres to the first channel 211, the second channel 212, and the third channel 213, causing blockage. On the other hand, the temperature inside the crucible lid 200 is higher than the temperature inside the containment cavity 110, so that when the vapor-deposited material sublimates and flows through the first channel 211, the second channel 212 and the third channel 213, the temperature rises further, thereby subjecting the vapor-deposited material to an upward force. The vapor-deposited material can quickly pass through the first channel 211, the second channel 212 and the third channel 213 and be ejected through the vapor deposition opening 220, resulting in better film formation on the substrate and reducing the possibility of blockage caused by solidification in the first channel 211, the second channel 212 and the third channel 213.

[0094] Optionally, the first heating device 300 and the second heating device 400 can be controlled independently. Alternatively, the first heating device 300 and the second heating device 400 can be controlled synchronously.

[0095] The material of the crucible body 100 can be selected from the materials commonly used in crucibles in the prior art, such as metals and alloys such as titanium and aluminum, or it can also be ceramic.

[0096] The structural design in this embodiment can be applied to other vapor deposition crucibles 10. The specific choice can be made according to the actual situation, and this application does not impose any specific restrictions on it.

[0097] Please see Figure 7 , Figure 7 This is a partial top view schematic diagram of a vapor deposition apparatus provided in an embodiment of this application.

[0098] like Figure 7 As shown, and see also Figures 1 to 6 The second aspect of this application provides a vapor deposition apparatus 20, which includes the vapor deposition crucible 10 of any of the above embodiments. Since the vapor deposition apparatus 20 provided in the second aspect of this application includes the vapor deposition crucible 10 of any of the above embodiments, the vapor deposition apparatus 20 provided in the second aspect of this application has the beneficial effects of the vapor deposition crucible 10 of any of the above embodiments, which will not be repeated here.

[0099] In some alternative embodiments, the vapor deposition apparatus 20 includes a plurality of vapor deposition crucibles 10, which are arranged at intervals.

[0100] In these alternative embodiments, multiple vapor deposition crucibles 10 are arranged at intervals to form a linear vapor deposition apparatus 20. Each vapor deposition crucible 10 can perform vapor deposition, increasing the vapor deposition range of the vapor deposition apparatus 20. Furthermore, multiple vapor deposition crucibles 10 can accommodate more vapor deposition material, making it suitable for vapor deposition of large-size substrates.

[0101] In some optional embodiments, each vapor deposition crucible 10 of the vapor deposition apparatus 20 includes a crucible body 100, a crucible lid 200, and a first heating device 300, as described in any of the embodiments of the first aspect above. That is, a plurality of crucible bodies 100 are provided with crucible lids 200 and first heating devices 300.

[0102] In these optional embodiments, a crucible lid 200 is provided on each crucible body 100 to form a heat barrier against the receiving cavity 110, reducing heat loss within the receiving cavity 110 and allowing the vapor-deposited material within the receiving cavity 110 to be fully heated and sublimated. The crucible lid 200 includes a vapor deposition channel 210 and a vapor deposition opening 220. After sublimation, the vapor-deposited material enters the vapor deposition channel 210 through the crucible opening 120 and then flows out through the vapor deposition opening 220. Each first heating device 300 heats the vapor deposition channel 210 of each crucible lid 200, ensuring that the vapor deposition material is continuously heated as it flows through the vapor deposition channel 210. This improves the problem of the vapor deposition material cooling and forming a film that adheres to the inner wall of the crucible opening 120 or the inner wall of the crucible lid 200, thus clogging the crucible opening 120 or the vapor deposition opening 220, when the material rises to the crucible opening 120 or the crucible lid 200. The vapor deposition channel 210 includes a first channel 211, a second channel 212, and a third channel 213. The second channel 212 is smaller than the first channel 211 and the third channel 213, increasing the flow rate of the vapor deposition material as it flows through the second channel 212 and accelerating its diffusion through the first channel 211. This improves the spraying effect of the vapor deposition material and reduces the possibility of it adhering to the crucible opening 120 or the vapor deposition opening 220.

[0103] The third aspect of this application provides an electronic device manufactured by forming an organic film on a substrate using a film-forming apparatus 20 of the above-described evaporation apparatus 20. Here, a method for manufacturing an organic light-emitting element for use in an organic light-emitting display panel as an electronic device will be described as an example. However, the electronic device is not limited to this. For example, this application can also be applied to the manufacture of thin-film solar cells and organic CMOS image sensors. The method for manufacturing the electronic device includes a step of forming an organic film on a substrate using the film-forming apparatus 20 of the above-described embodiments. Additionally, it includes a step of forming a metal film or a metal oxide film after forming the organic film on the substrate. Since the electronic device provided in the third aspect of this application is prepared using the evaporation apparatus 20 of any of the above embodiments, the evaporation apparatus 20 provided in the third aspect of this application has the beneficial effects of the evaporation apparatus 20 of any of the above embodiments, which will not be elaborated further here.

[0104] An embodiment of the fourth aspect of this application provides a vapor deposition method for the vapor deposition crucible 10 of any of the above embodiments:

[0105] The crucible body 100 is heated, and the crucible body surrounds to form a receiving cavity 110 and has a crucible opening 120 communicating with the receiving cavity 110. The receiving cavity 110 is used to receive the vapor deposition material.

[0106] The first heating device 300 heats the vapor deposition channel 210 of the crucible cover 200. The crucible cover 200 covers the crucible opening 120 of the crucible body. The crucible cover 200 encloses the vapor deposition channel 210 and has a vapor deposition opening 220 communicating with the vapor deposition channel 210. The vapor deposition channel 210 includes a first channel 211, a second channel 212 and a third channel 213 that are interconnected. The first channel 211 is connected between the second channel 212 and the vapor deposition opening 220. The second channel 212 is connected between the first channel 211 and the third channel 213. The third channel 213 is connected between the second channel 212 and the receiving cavity 110. In the direction perpendicular to the extension direction of the vapor deposition channel 210, the size of the first channel 211 is larger than the size of the second channel 212, and the size of the second channel 212 is smaller than the size of the third channel 213.

[0107] According to the vapor deposition method of this application embodiment, the crucible body 100 is heated, and the vapor deposition material in the receiving cavity 110 of the crucible body 100 can sublimate and flow out through the crucible opening 120. A crucible lid 200 is provided on the crucible body 100 to form a heat barrier against the receiving cavity 110, reducing heat loss in the receiving cavity 110 and allowing the vapor deposition material in the receiving cavity 110 to be fully heated and sublimated. The crucible lid 200 includes a vapor deposition channel 210 and a vapor deposition opening 220. After the vapor deposition material sublimates, it enters the vapor deposition channel 210 through the crucible opening 120 and then flows out through the vapor deposition opening 220. The first heating device 300 heats the vapor deposition channel 210, ensuring that the vapor deposition material is continuously heated as it flows through the channel. This improves the situation where the temperature in the area of ​​the crucible opening 120 or crucible lid 200 is too low when the vapor deposition material rises to the crucible opening 120 or crucible lid 200, causing the material to cool and form a film that adheres to the inner wall of the crucible opening 120 or crucible lid 200, thus clogging the opening. The vapor deposition channel 210 includes a first channel 211, a second channel 212, and a third channel 213. The second channel 212 is smaller than the first channel 211 and the third channel 213, increasing the flow rate of the vapor deposition material as it flows through the second channel 212 and accelerating its diffusion through the first channel 211. This improves the spraying effect of the vapor deposition material and reduces the likelihood of it adhering to the crucible opening 120 or the vapor deposition opening 220.

[0108] The embodiments described above are not exhaustive, nor do they limit the invention to the specific embodiments described. Clearly, many modifications and variations can be made based on the above description. These embodiments are selected and specifically described in this specification to better explain the principles and practical applications of this application, thereby enabling those skilled in the art to effectively utilize this application and its modifications. This application is limited only by the claims and their full scope and equivalents.

Claims

1. A vapor deposition crucible, characterized in that, include: The crucible body encloses a cavity and has a crucible opening communicating with the cavity, the cavity being used to contain vapor-deposited material; A crucible lid is fitted onto the crucible opening of the crucible body. The crucible lid encloses and forms a vapor deposition channel and has a vapor deposition opening communicating with the vapor deposition channel. The vapor deposition channel includes a first channel, a second channel, and a third channel that communicate with each other. The first channel connects the second channel and the vapor deposition opening. The second channel connects the first channel and the third channel. The third channel connects the second channel and the receiving cavity. Along a direction perpendicular to the extension direction of the vapor deposition channel, the size of the first channel is larger than the size of the second channel, and the size of the second channel is smaller than the size of the third channel. The first heating device is located on the periphery of the vapor deposition channel and is used to heat the vapor deposition material in the vapor deposition channel.

2. The vapor deposition crucible according to claim 1, characterized in that, Along the direction perpendicular to the extension direction of the vapor deposition channel, the ratio of the size of the first channel to the size of the second channel is greater than 1 and less than or equal to 8; Preferably, the size of the first channel is less than or equal to the size of the third channel in a direction perpendicular to the extension direction of the vapor deposition channel.

3. The vapor deposition crucible according to claim 1, characterized in that, The first heating device is disposed in the area corresponding to the second channel and is used to heat the second channel; Preferably, the first heating device is disposed in the area corresponding to the first channel and the second channel, and is used to heat the first channel and the second channel; Preferably, the first heating device is disposed in the area corresponding to the first channel, the second channel and the third channel, for heating the first channel, the second channel and the third channel.

4. The vapor deposition crucible according to claim 1, characterized in that, The first heating device is embedded inside the crucible lid, or the first heating device is located on the side of the crucible lid away from the vapor deposition channel.

5. The vapor deposition crucible according to claim 1, characterized in that, Also includes: The second heating device is located on the periphery of the crucible body and is used to heat the crucible body. Preferably, the heating temperature of the first heating device is greater than or equal to the heating temperature of the second heating device.

6. The vapor deposition crucible according to claim 1, characterized in that, The thermal conductivity of the material of the crucible lid is greater than or equal to the thermal conductivity of the material of the crucible body.

7. The vapor deposition crucible according to claim 1, characterized in that, Along the direction away from the receiving cavity, the cross-sectional dimensions of the first channel tend to increase; Preferably, the cross-sectional dimensions of the third channel tend to decrease along the direction away from the receiving cavity.

8. The vapor deposition crucible according to claim 1, characterized in that, The first heating device includes a plurality of heaters disposed around the periphery of the vapor deposition channel.

9. A vapor deposition apparatus, characterized in that, Includes the vapor deposition crucible as described in any one of claims 1-8.

10. The vapor deposition apparatus according to claim 9, characterized in that, It includes multiple vapor deposition crucibles, which are arranged at intervals.

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