Evaporation device and preparation method of display panel

Abstract

The application provides an evaporation device and a preparation method of a display panel. The evaporation device comprises: at least one column of evaporation sources, each column of evaporation sources comprising at least one evaporation nozzle, and the evaporation source being configured to spray evaporation material from the evaporation nozzle; at least one limiting plate mechanism, the limiting plate mechanism being arranged correspondingly to the evaporation source; the limiting plate mechanism is arranged on one side of the corresponding evaporation nozzle, and the orthographic projection of the limiting plate mechanism on the plane where the corresponding column of evaporation sources is located forms a limiting opening, and the limiting opening covers the corresponding column of evaporation nozzles; wherein the limiting opening is in a closed loop shape, and the edge of the limiting opening along the circumferential direction is an arc-shaped edge. The evaporation device can limit the evaporation angle to 360°, and the difference of each evaporation angle is within a preset range, thereby reducing the risk of evaporation material evaporating to the auxiliary electrode causing leakage.

Description

Technical Field

[0001] This invention relates to the field of vapor deposition technology, and in particular to a vapor deposition apparatus and a method for preparing a display panel. Background Technology

[0002] Organic light-emitting diode (OLED) technology has developed rapidly in recent years. In traditional display panel manufacturing, a fine metal mask (FMM) is typically used to pattern the light-emitting pixels. FMM technology is mature and has extensive mass production experience. However, FMM technology also suffers from limitations in precision, high development costs, and long development cycles. Fine metal maskless technology eliminates the limitations of traditional OLED processes on display size, resolution, and other screen performance characteristics, offering advantages such as high performance, full-size display, and agile delivery. Patents CN118251982A, CN115666161A, CN116648095A, CN117062489A, CN118678742A, CN118785761A, CN115224220A, CN118678729A, CN118660529A, and CN118660589A describe relevant aspects of fine metal maskless technology and are provided for reference.

[0003] Although display panels fabricated without fine metal masks have many advantages over traditional fine metal mask technology, some problems still exist. For example, during the evaporation process, the evaporation material can easily evaporate onto the auxiliary electrodes of the substrate, leading to leakage in the final display panel. Summary of the Invention

[0004] The vapor deposition apparatus and display panel preparation method provided in this application aim to solve the problem that existing vapor deposition apparatuses cause vapor deposition materials to be deposited onto the auxiliary electrodes of the substrate being formed, resulting in leakage current in the final display panel.

[0005] To solve the above-mentioned technical problems, one technical solution adopted in this application is: to provide a vapor deposition apparatus configured to deposit a vapor deposition film of a predetermined pattern on a substrate for film formation, the vapor deposition apparatus comprising:

[0006] At least one column of vapor deposition sources, each column of vapor deposition sources including at least one vapor deposition nozzle, the vapor deposition sources being configured to eject the vapor deposition material from the vapor deposition nozzle;

[0007] At least one limiting plate mechanism is provided, which is correspondingly provided with the vapor deposition source; the limiting plate mechanism is provided on one side of the corresponding vapor deposition nozzle, and the orthographic projection of the limiting plate mechanism on the plane where the vapor deposition source is located forms a limiting opening, which covers the corresponding vapor deposition nozzle;

[0008] The restricted opening is in the form of a closed loop, and the edge of the restricted opening along its circumferential direction is an arc-shaped edge.

[0009] In one embodiment of this application, each of the limiting plate mechanisms includes multiple levels of limiting plates, and at least one side of each level of the limiting plate is provided with an arc-shaped groove, the arc-shaped groove being recessed from one side of the limiting plate toward the other side; wherein, the arc-shaped groove on the multiple levels of limiting plates forms the limiting opening by the orthographic projection of the corresponding column of the vapor deposition source on the plane.

[0010] In one embodiment of this application, the angle between the line connecting the vapor deposition nozzle and the edge of the corresponding limiting opening and the plane where the vapor deposition source of the corresponding column is located is defined as the vapor deposition angle; wherein, among all the vapor deposition angles corresponding to the limiting opening, the difference between the maximum vapor deposition angle and the minimum vapor deposition angle is less than or equal to 5°.

[0011] In one embodiment of this application, each of the limiting plate mechanisms includes:

[0012] Two primary limiting plates; a first arc-shaped groove is formed on one side of each primary limiting plate; the first arc-shaped grooves on the two primary limiting plates are arranged opposite each other along a first direction;

[0013] At least two secondary limiting plates, each secondary limiting plate having a second arc-shaped groove on at least one side, the second arc-shaped grooves on each pair of secondary limiting plates being arranged opposite each other along a second direction, and forming a limiting opening with the orthographic projection of the corresponding two first arc-shaped grooves on the plane where the vapor deposition source is located in the corresponding column; wherein, the first direction intersects the second direction;

[0014] Preferably, the first direction is perpendicular to the second direction;

[0015] Preferably, the first arc-shaped groove is provided on only one side of the primary limiting plate.

[0016] In one embodiment of this application, each column of vapor deposition sources includes a plurality of vapor deposition nozzles;

[0017] The limiting plate mechanism has multiple limiting openings in the orthographic projection of the vapor deposition source in the corresponding column; each limiting opening corresponds to one vapor deposition nozzle; each limiting opening is closed-loop, and the edge of each limiting opening along its circumferential direction is an arc-shaped edge.

[0018] Preferably, the number of vapor deposition nozzles and the number of limiting openings are both three.

[0019] In one embodiment of this application, each of the primary limiting plates has a plurality of first arc-shaped grooves spaced apart along its length; the plurality of first arc-shaped grooves on two primary limiting plates are arranged opposite to each other along the first direction;

[0020] The number of secondary restriction plates is multiple, and the multiple secondary restriction plates are spaced apart along the second direction. The second arc-shaped groove on each two adjacent secondary restriction plates and the corresponding two first arc-shaped grooves are projected onto the plane where the evaporation source is located to form a restriction opening.

[0021] In one embodiment of this application, the vapor deposition apparatus includes a first column of vapor deposition sources, a second column of vapor deposition sources, and a third column of vapor deposition sources; wherein at least one of the limiting plate mechanisms is correspondingly provided for the second column of vapor deposition sources.

[0022] In one embodiment of this application, the central angle subtended by the first arcuate groove is 90°-150°; and / or

[0023] The central angle opposite to the second arc-shaped groove is 90°-150°;

[0024] In one embodiment of this application, the central angles of the first arc-shaped groove and the second arc-shaped groove are both 90°.

[0025] In one embodiment of this application, along a direction perpendicular to the plane where the vapor deposition source is located, the multi-level limiting plates of the same limiting plate mechanism are at the same height position; the limiting opening is a circular opening;

[0026] Preferably, the vapor deposition nozzle is located at the center of the restricted opening.

[0027] In one embodiment of this application, along a direction perpendicular to the plane where the vapor deposition source is located, the primary limiting plate and the secondary limiting plate of the same limiting plate mechanism are at different height positions; wherein, the distance between the orthographic projection of the first arc-shaped groove on the plane where the vapor deposition source is located in the corresponding column and the corresponding vapor deposition nozzle is a first distance; the distance between the primary limiting plate along the direction perpendicular to the plane where the vapor deposition source is located and the corresponding vapor deposition nozzle is a first height; the distance between the orthographic projection of the second arc-shaped groove on the plane where the vapor deposition source is located in the corresponding column and the corresponding vapor deposition nozzle is a second distance; the distance between the secondary limiting plate along the direction perpendicular to the plane where the vapor deposition source is located and the corresponding vapor deposition nozzle is a second height; wherein, the first height is less than the second height, and the first distance is less than the second distance.

[0028] In one embodiment of this application, the vapor-deposited film includes one or more of a hole injection layer, a hole transport layer, and a charge generation layer;

[0029] Preferably, the film-forming carrier plate comprises:

[0030] substrate;

[0031] A pixel definition layer is disposed on the substrate, the pixel definition layer includes a pixel definition portion, the pixel definition portion enclosing a pixel opening;

[0032] A first electrode is disposed on the substrate, and at least a portion of the first electrode is exposed through the pixel opening;

[0033] An isolation structure includes a first isolation portion and a second isolation portion; the second isolation portion is disposed on the side surface of the first isolation portion away from the substrate; and the orthographic projection of the side of the first isolation portion away from the substrate on the substrate is located within the orthographic projection of the second isolation portion on the substrate.

[0034] In one embodiment of this application, within the same limiting plate mechanism, two primary limiting plates may move closer to or further away from each other along the first direction; and / or

[0035] In the same limiting plate mechanism, each pair of oppositely arranged secondary limiting plates can move closer to or further away from each other along the second direction.

[0036] In one embodiment of this application, in the same limiting plate mechanism, two primary limiting plates may move closer to or further away from each other along the first direction;

[0037] The limiting plate mechanism includes a first type of secondary limiting plate and a second type of secondary limiting plate, wherein the first type of secondary limiting plate or the second type of secondary limiting plate is detachably connected to the first type of limiting plate; wherein the arc length and central angle of the second arc groove on the different types of secondary limiting plates are different.

[0038] To solve the above-mentioned technical problems, another technical solution adopted in this application is: providing a method for manufacturing a display panel, the method comprising:

[0039] A film-forming carrier plate is provided; the film-forming carrier plate includes a substrate, a pixel definition layer, a first electrode, and an isolation structure; wherein, the pixel definition layer is disposed on the substrate, and the pixel definition layer includes a pixel definition portion, which surrounds to form a pixel opening; the first electrode is disposed on the substrate, and at least a portion of the first electrode is exposed through the pixel opening; the isolation structure includes a first isolation portion and a second isolation portion; the second isolation portion is disposed on the side surface of the first isolation portion away from the substrate; and the orthographic projection of the side of the first isolation portion away from the substrate on the substrate is located within the orthographic projection of the second isolation portion on the substrate;

[0040] The vapor deposition apparatus described above is used to deposit a vapor deposition film of a specified pattern within the pixel opening.

[0041] In one embodiment of this application, the vapor-deposited film is formed within the isolation opening enclosed by the isolation structure, and the vapor-deposited film is spaced apart from the isolation structure. The vapor-deposited film is one or more of a hole injection layer, a hole transport layer, and a charge generation layer.

[0042] The beneficial effects of the embodiments of this application, distinct from the technical effects, are as follows: The vapor deposition apparatus provided in this application, by making the limiting opening a closed loop, can limit the vapor deposition angle in 360° using the limiting plate mechanism. This allows the limiting plate mechanism to limit the vapor deposition angle not only in the scanning direction but also in other vapor deposition directions. Furthermore, by making the edge of the limiting opening circumferentially curved, the difference in the vapor deposition angle corresponding to the limiting opening circumferentially can be kept within a preset range. This reduces the risk of leakage current in the final display panel caused by the vapor deposition material depositing onto the auxiliary electrode of the substrate. Attached Figure Description

[0043] Figure 1 This is a simplified structural diagram of a film-forming carrier plate provided in one embodiment of this application;

[0044] Figure 2 This is a side view of a vapor deposition apparatus provided in an embodiment of this application;

[0045] Figure 3 A top view of a limiting plate mechanism provided in an embodiment of this application;

[0046] Figure 4 A top view of a limiting plate mechanism provided in another embodiment of this application;

[0047] Figure 5 A simplified structural diagram of a vapor deposition apparatus provided in another embodiment of this application;

[0048] Figure 6 for Figure 5 Top view of the corresponding limiting plate mechanism;

[0049] Figure 7 and Figure 8 These are schematic diagrams showing the restriction openings formed by different types of secondary and primary restriction plates;

[0050] Figure 9 A flowchart illustrating a method for fabricating a display panel according to an embodiment of this application.

[0051] Explanation of reference numerals in the attached figures

[0052] 100 Film-forming carrier plate; 11 Substrate; 12 Pixel definition layer; 121 Pixel opening; 13 First electrode; 14 Isolation structure; 141 First isolation portion; 142 Second isolation portion; 143 Third isolation portion;

[0053] 10 vapor deposition chambers;

[0054] 20 Evaporation source; 21 Evaporation nozzle;

[0055] 30. Restriction plate mechanism; 31. Restriction opening; 32. Primary restriction plate; 321. First arc-shaped groove; 33. Secondary restriction plate; 331. Second arc-shaped groove;

[0056] 40. Bearing section. Detailed Implementation

[0057] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0058] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0059] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0060] In Visionox's intelligent pixelation (ViP) technology, the existing AMOLED technology and processes can be used in the TFT control backplane. After the anode preparation is completed, differentiation is gradually achieved starting from the pixel definition layer (PDL) to form the isolation structure unique to ViP AMOLED. Then, the pixel preparation is carried out in the whole-surface evaporation and photolithography patterning steps to obtain the display body.

[0061] In VIP technology, the deposition source used is typically a line source. The deposition angles of a line source differ in the nozzle and scan directions. In the scan direction, due to the presence of a limiting plate, the deposition angle can be controlled to a sufficiently small range. However, line sources cannot effectively limit the deposition angle in other directions, such as the nozzle direction. In the nozzle direction, due to the larger deposition angle, the material may be deposited onto the auxiliary electrode of the OLED device. Therefore, when the deposition apparatus is used in VIP technology to deposit the light-emitting functional layers in OLED devices, such as hole injection layer (HIL), hole transport layer (HTL), and charge generation layer (CGL), the materials of these layers are highly conductive. If these layers overlap with the auxiliary electrode, it will cause leakage in the final OLED device.

[0062] Therefore, this application provides a novel vapor deposition apparatus that not only retains the process capabilities of traditional line sources but also limits the vapor deposition angle in different directions (360°), reducing the risk of leakage caused by the overlap of the vapor-deposited high-conductivity material with the auxiliary electrode. This vapor deposition apparatus can be integrated with ViP technology to achieve better performance in the final display panel.

[0063] The present application will now be described in detail with reference to the accompanying drawings and embodiments.

[0064] In this embodiment, a vapor deposition apparatus is provided, which performs vapor deposition using a scanning vapor deposition method; the vapor deposition apparatus is configured to deposit a vapor deposition film of a predetermined pattern onto a substrate for film deposition. In some embodiments, see [link to relevant documentation]. Figure 1 , Figure 1 This is a simplified structural diagram of a film-forming carrier plate provided in an embodiment of this application; the film-forming carrier plate 100 includes a substrate 11, a pixel definition layer 12, a first electrode 13, and an isolation structure 14.

[0065] The substrate 11 may include a substrate and a driving circuit layer. The substrate plays a supporting role in the display panel and can be a flexible substrate or a rigid substrate. When the substrate is flexible, its material can be polyimide (PI), or it can be a multilayer structure with alternating organic and inorganic layers. For example, the substrate includes sequentially stacked inorganic, organic, and inorganic layers. In this case, the multilayer structure with alternating organic and inorganic layers can balance the flexibility and strength of the substrate, enabling the display panel to be bent and resist breakage and deformation. When the substrate is rigid, its material can be glass or metal. This application does not limit the structure of the substrate.

[0066] The driving circuit layer includes a pixel driving circuit, which includes a transistor and a storage capacitor. The transistor includes a semiconductor portion, a gate, a source, and a drain. The capacitor includes a first electrode and a second electrode. The gate and the first electrode may be located in a first conductive layer (e.g., a metal layer), the second electrode may be located in a second conductive layer (e.g., a metal layer), and the source and drain may be located in a third conductive layer (e.g., a metal layer). Interlayer insulating layers are disposed between the first and second conductive layers, and between the second and third conductive layers. The driving circuit layer may also include a fourth conductive layer (e.g., a metal layer), located on the side of the third conductive layer facing away from the substrate, and a signal line is disposed on the fourth conductive layer. A first planarization layer (PLN1) is disposed between the fourth and third conductive layers, and a second planarization layer (PLN2) may be disposed on the surface of the fourth conductive layer facing away from the substrate. The pixel definition layer 12 and the first electrode 13 are specifically disposed on the surface of the second planarization layer (PLN2).

[0067] The pixel driving circuit can be, for example, a 2T1C circuit, a 7T1C circuit, a 7T2C circuit, or a 9T1C circuit, and this application does not limit its specific structure. The "2T1C circuit" refers to a pixel circuit that includes two thin-film transistors (T) and one capacitor (C), and so on for "7T1C circuit", "7T2C circuit", "9T1C circuit", etc.

[0068] The third and fourth conductive layers may include signal lines for transmitting signals to the pixel driving circuit; for example, they may transmit signals such as a first voltage signal (ELVSS), a second voltage signal (ELVDD), or a data signal (DATA). In this embodiment, the third and fourth conductive layers may include signal lines for transmitting the first voltage signal ELVSS.

[0069] In one embodiment, a buffer layer may also be provided between the substrate and the driving circuit layer.

[0070] The pixel definition layer 12 can be formed of organic materials such as polyimide (PI), polyamide, benzocyclobutene (BCB), acrylic resin or phenolic resin, or inorganic materials such as SiNx.

[0071] A pixel definition layer 12 is disposed on a substrate 11. For example, the pixel definition layer 12 is disposed on the surface of the second planarization layer (PLN2) of the substrate 11 and is located on the side of the driving circuit layer away from the substrate. The pixel definition layer 12 includes a pixel definition portion, which surrounds and forms a pixel opening 121.

[0072] A first electrode 13 is disposed on a substrate 11, and at least a portion of the first electrode 13 is exposed through a pixel opening 121. The first electrode 13 may be an anode. The material of the first electrode 13 typically includes indium tin oxide and / or aluminum.

[0073] The isolation structure 14 includes a first isolation portion 141 and a second isolation portion 142. The first isolation portion 141 is electrically connected to the driving circuit layer on the substrate 11. The second isolation portion 142 is disposed on the surface of the first isolation portion 141 facing away from the substrate 11; and the orthographic projection of the side of the first isolation portion 141 away from the substrate 11 onto the substrate 11 lies within the orthographic projection of the second isolation portion 142 onto the substrate 11, that is, the isolation structure 14 has a shape that is wider at the top and narrower at the bottom. The vertical cross-section of the first isolation portion 141 can be trapezoidal to increase support strength; the second isolation portion 142 can be referred to as the crown. The orthographic projection area of ​​the side of the first isolation portion 141 away from the substrate 11 onto the substrate 11 is smaller than the orthographic projection area of ​​the second isolation portion 142 onto the substrate 11. The cross-section of the isolation structure 14 perpendicular to the substrate 11 can be T-shaped.

[0074] The second isolation section 142 includes a conductive material, which may include a metal, such as titanium.

[0075] In one embodiment, the isolation structure 14 further includes a third isolation portion 143, which is disposed between the first isolation portion 141 and the substrate 11. The third isolation portion 143 has good adhesion to both the first isolation portion 141 and the pixel definition layer 12. The first isolation portion 141, the second isolation portion 142, and the third isolation portion 143 are all made of conductive materials, such as conductive metals like copper or aluminum. Specifically, the first isolation portion 141 may be made of aluminum; the second isolation portion 142 may be made of titanium (Ti); and the third isolation portion 143 may be a molybdenum (Mo) layer. For example, the orthographic projection of the first isolation portion 141 onto the substrate 11 may fall within the orthographic projection of the third isolation portion 143 onto the substrate 11. For example, the orthographic projection area of ​​the side of the first isolation portion 141 away from the substrate 11 may be smaller than the orthographic projection area of ​​the third isolation portion 143 onto the substrate 11. The cross-section of the isolation structure 14 perpendicular to the substrate 11 may be I-shaped.

[0076] In this embodiment, the third isolation portion 143 is electrically connected to the driving circuit layer on the substrate 11, and the first isolation portion 141 is electrically connected to the driving circuit layer through the third isolation portion 143. The auxiliary electrode involved in this application is the first isolation portion 141 or a combination structure corresponding to the first isolation portion 141 and the third isolation portion 143.

[0077] The vapor-deposited film may include one or more of the following: hole injection layer (HIL), hole transport layer (HTL), and charge generation layer (CGL).

[0078] The following is a description of the specific structure and function of the vapor deposition apparatus.

[0079] Please see Figures 2 to 3 , Figure 2 This is a side view of a vapor deposition apparatus provided in an embodiment of this application; Figure 3 This is a top view of a limiting plate mechanism 30 provided in an embodiment of this application. The vapor deposition apparatus can be a horizontal vapor deposition apparatus or a vertical vapor deposition apparatus; this embodiment of the application uses a horizontal vapor deposition apparatus as an example. The vapor deposition apparatus includes a vapor deposition chamber 10, at least one row of vapor deposition sources 20, at least one limiting plate mechanism 30, and a support portion 40.

[0080] At least one column of vapor deposition sources 20 is located inside the vapor deposition chamber 10. Each column of vapor deposition sources 20 includes at least one vapor deposition nozzle 21. The interior of the vapor deposition source 20 is used to contain vapor deposition material. The vapor deposition source 20 is used to evaporate the vapor deposition material from the vapor deposition nozzle 21 and spray it onto the film-forming carrier plate 100.

[0081] A limiting plate mechanism 30 is correspondingly arranged with a row of vapor deposition sources 20. In some embodiments, combined with Figure 2 The vapor deposition apparatus includes a first column of vapor deposition sources 20, a second column of vapor deposition sources 20, and a third column of vapor deposition sources 20; wherein at least the second column of vapor deposition sources 20 is provided with a corresponding limiting plate mechanism 30. It is understood that each column of vapor deposition sources 20 may be provided with a corresponding limiting plate mechanism 30; alternatively, some columns of vapor deposition sources 20 may be provided with limiting plate mechanisms 30, while others may not. For example, each column of vapor deposition sources 20 is provided with one limiting plate mechanism 30. The following embodiments, unless otherwise specified, use a vapor deposition apparatus comprising one column of vapor deposition sources 20 and one limiting plate mechanism 30 as an example for description; the structures and correspondences of other columns of vapor deposition sources 20 and their corresponding limiting plate mechanisms 30 are similar.

[0082] A limiting plate mechanism 30 is disposed on the side of the corresponding vapor deposition nozzle 21 facing the support portion 40, and the limiting plate mechanism 30, in its orthographic projection on the plane where the corresponding column of vapor deposition sources 20 is located, forms a limiting opening 31. The limiting opening 31 covers the corresponding vapor deposition nozzle 21, thereby limiting the vapor deposition angle α of the vapor deposition source 20 through the limiting opening 31. Figure 2 In this application, the angle between the line connecting the edge of the vapor deposition nozzle 21 and the corresponding limiting opening 31 and the plane where the vapor deposition source 20 is located is defined as the vapor deposition angle α.

[0083] The vapor deposition source 20 is, for example, a container that contains vapor deposition material. The vapor deposition source 20 can be a container that directly contains vapor deposition material inside the container, or it can be configured with load-locking piping to supply vapor deposition material from the outside.

[0084] The vapor deposition source 20 is formed in, for example, a rectangular shape. The vapor deposition source 20 has a plurality of vapor deposition nozzles 21 on its upper surface (i.e., the side surface opposite to the limiting plate mechanism 30), and the vapor deposition nozzles 21 are the ejection outlets for ejecting vapor deposition material.

[0085] In some embodiments, the vapor deposition source 20 generates a gaseous vapor deposition material by heating the vapor deposition material to cause it to evaporate (in the case of a liquid material) or sublimate (in the case of a solid material). The vapor deposition source 20 then ejects the vapor deposition material, which has thus become a gas, from the vapor deposition nozzle 21 to the outside of the vapor deposition source 20 as the vapor deposition material.

[0086] The vapor deposition material ejected from the vapor deposition nozzle 21 initially expands isotropically. Then, the vapor deposition material that expands along the first direction X towards both ends and collides with the limiting plate mechanism 30 is blocked by the limiting plate mechanism 30, while the remainder passes through the limiting opening 31. In some embodiments, the vapor deposition apparatus further includes a vapor deposition mask (not shown), through which the vapor deposition material passing through the limiting opening 31 covers the film-forming surface of the substrate 11. Thus, on the film-forming surface, a vapor deposition film with a defined pattern is formed in the film-forming pattern area in the region limited by the limiting opening 31 and the mask opening and corresponding to each vapor deposition nozzle 21.

[0087] The support part 40 is located inside the vapor deposition chamber 10 and on the side of the vapor deposition source 20 where the vapor deposition nozzle 21 is located. The support part 40 is spaced apart from the vapor deposition nozzle 21. The side of the support part 40 facing the vapor deposition nozzle 21 is used to support the film-forming carrier plate 100.

[0088] Specifically, the support portion 40 is used to support the film-forming carrier plate 100. The film-forming carrier plate 100 is placed on the side of the support portion 40 away from the top of the evaporation chamber 10, that is, the film-forming surface of the film-forming carrier plate 100 is arranged opposite to the evaporation nozzle 21. So that when the evaporation source 20 evaporates the material, the evaporation material rises directly and deposits on the film-forming surface of the film-forming carrier plate 100. When performing evaporation on the film-forming carrier plate 100, a fine metal mask or a general metal mask can be used for evaporation.

[0089] Among them, such as Figure 3 As shown, the limiting opening 31 is in a closed loop shape. In this way, the limiting plate mechanism 30 can limit the evaporation angle α of the evaporation source 20 in all directions of 360°. Therefore, the limiting plate mechanism 30 can limit the evaporation angle α not only in the scanning direction, but also in other evaporation directions, such as the nozzle direction.

[0090] Furthermore, the edge of the limiting opening 31 along its circumferential direction is an arc-shaped edge. Here, the edge of the limiting opening 31 refers to its edge contour line. An arc-shaped edge means that the edge contour of the limiting opening 31 is arc-shaped, rather than straight. Compared to a solution where the edge of the limiting opening 31 along its circumferential direction is a straight edge, this solution ensures that the differences in the various evaporation angles α corresponding to the limiting opening 31 along its circumferential direction are within a preset range. This reduces the risk of leakage current in the final display panel caused by the evaporation of material onto the auxiliary electrode of the film-forming substrate 100.

[0091] Among all the evaporation angles α of the evaporation source 20 corresponding to the restricted opening 31, the difference between the maximum and minimum evaporation angles is less than or equal to 5°. For example, the difference between the maximum and minimum evaporation angles can be 0°, 1°, 2°, 3°, 4°, or 5°.

[0092] In one embodiment, each limiting plate mechanism 30 includes multiple levels of limiting plates, and the number of limiting plates at each level can be one, two, three, or more. In one specific embodiment, the number of limiting plates at each level is at least two. Two limiting plates of the same level are arranged opposite each other along a preset direction, and the directions in which limiting plates of different levels are arranged intersect. For example, two first-level limiting plates 32 are arranged opposite each other along a first direction X, and two second-level limiting plates 33 are arranged opposite each other along a second direction Y, with the first direction X and the second direction Y intersecting.

[0093] In some embodiments, combined with Figure 3 Each level of the limiting plate has an arc-shaped groove on at least one side; the arc-shaped groove is recessed from one side of the limiting plate toward the opposite side. The multi-level limiting plates are arranged adjacent to each other in the orthographic projection of the corresponding column of vapor deposition sources 20 onto the plane, and the arc-shaped grooves on the multi-level limiting plates form a limiting opening 31 in the orthographic projection of the corresponding column of vapor deposition sources 20 onto the plane. It can be understood that the groove wall of the arc-shaped groove forms the edge of the limiting opening 31.

[0094] Combination Figure 3 It should be noted that the straight-line distance between the arc-shaped groove and its side surface at various points along its extension direction gradually decreases from the middle position to the sides. For example... Figure 3 In this case, E1>E2>0.

[0095] In some embodiments, combined with Figure 3Each limiting plate mechanism 30 includes two primary limiting plates 32 and at least two secondary limiting plates 33. A first arc-shaped groove 321 is formed on one side of each primary limiting plate 32; the first arc-shaped grooves 321 on the two primary limiting plates 32 are arranged opposite each other along a first direction X. The first direction X can be a scanning direction. The central angle subtended by the first arc-shaped groove 321 can be 90°-150°; for example, the central angle subtended by the first arc-shaped groove 321 can be 90°, 120°, or 150°.

[0096] In some embodiments, the first arc-shaped groove 321 is provided on only one side of the primary limiting plate 32, and the first arc-shaped grooves 321 of the two primary limiting plates 32 are arranged opposite to each other. In one specific embodiment, the two primary limiting plates 32 are axially symmetrical.

[0097] At least one side of the secondary limiting plate 33 is provided with a second arc-shaped groove 331. The second arc-shaped grooves 331 on every two secondary limiting plates 33 are arranged opposite each other along the second direction Y, and together with the orthographic projections of the corresponding two first arc-shaped grooves 321 on the plane where the corresponding column of vapor deposition sources 20 is located, they form a limiting opening 31. The first direction X intersects with the second direction Y.

[0098] In one embodiment, the first direction X is perpendicular to the second direction Y, where the second direction Y can be the nozzle direction. The central angle subtended by the second arcuate groove 331 can be 90°-150°; for example, the central angle subtended by the second arcuate groove 331 can be 90°, 120°, or 150°. Specifically, the central angle and arc length of the first arcuate groove 321 and the second arcuate groove 331 can be adjusted according to the diameter of the pixel opening 121.

[0099] The orthographic projection of the first arc-shaped groove 321 onto the plane where the corresponding column of the vapor deposition source 20 is located is defined as the first orthographic projection, and the orthographic projection of the second arc-shaped groove 331 onto the plane where the corresponding column of the vapor deposition source 20 is located is defined as the second orthographic projection. The two first arc-shaped grooves 321 corresponding to the second arc-shaped groove 331 refer to the arc-shaped grooves corresponding to the two first orthographic projections that are respectively connected to the two ends of the second orthographic projection.

[0100] In some embodiments, combined with Figure 3 Each column of vapor deposition sources 20 includes multiple vapor deposition nozzles 21. In this embodiment, the orthographic projection of the limiting plate mechanism 30 onto the plane containing the corresponding column of vapor deposition sources 20 has multiple limiting openings 31. Each limiting opening 31 corresponds to one vapor deposition nozzle 21; each limiting opening 31 is a closed loop, and the edge of each limiting opening 31 along its circumferential direction is an arc-shaped edge. Thus, the vapor deposition angle α corresponding to each vapor deposition nozzle 21 can be limited 360°, and the difference between the various vapor deposition angles α corresponding to the same limiting opening 31 can be kept within a preset range.

[0101] In one specific embodiment, the number of vapor deposition nozzles 21 and the number of limiting openings 31 are both three.

[0102] In some embodiments, combined with Figure 3 Each primary limiting plate 32 has a plurality of spaced-apart first arc-shaped grooves 321 along its length direction (i.e., the Y direction). The number of first arc-shaped grooves 321 on each primary limiting plate 32 is the same. Specifically, the arc length and corresponding central angle of the first arc-shaped grooves 321 on each primary limiting plate 32 are also the same. The plurality of first arc-shaped grooves 321 on two primary limiting plates 32 are arranged opposite each other along the first direction X.

[0103] There are multiple secondary restriction plates 33, which are spaced apart along the second direction Y. The second arc-shaped grooves 331 on each pair of adjacent secondary restriction plates 33 and the corresponding two first arc-shaped grooves 321 are projected onto the plane where the vapor deposition source 20 is located in the corresponding column to form a restriction opening 31. It can be understood that the secondary restriction plate 33 located in the middle position along the second direction Y has second arc-shaped grooves 331 on both sides, so as to form a restriction opening 31 with the corresponding first arc-shaped grooves 321 on both sides respectively.

[0104] In some embodiments, see Figure 4 , Figure 4 This is a top view of a limiting plate mechanism 30 provided in another embodiment of this application. Since the dimension of the vapor deposition source 20 along the second direction Y is generally larger than the dimension of the substrate 100 to which the film is formed, the vapor deposition angle α of the vapor deposition nozzle 21 corresponding to the outermost limiting opening 31 (hereinafter referred to as the edge limiting opening) of the vapor deposition source 20 along the second direction Y does not need to be limited. In this embodiment, the vapor deposition apparatus is similar to the one described above. Figure 3 The corresponding limiting plate mechanism 30 differs in that the edge limiting opening is formed by two primary limiting plates 32 and one secondary limiting plate 33. The secondary limiting plate 33 can share the same secondary limiting plate 33 with adjacent limiting openings 31. That is, the edge limiting opening 31 is not a closed loop, and the side of the edge limiting opening 31 away from the limiting opening 31 along the second direction Y does not have a secondary limiting plate 33. This simplifies the process and reduces costs.

[0105] In some embodiments, please refer back to the reference. Figure 2Along the direction Z perpendicular to the plane where the vapor deposition source 20 is located, the multiple levels of limiting plates in the same limiting plate mechanism 30 are at the same height position; for example, all first-level limiting plates 32 and all second-level limiting plates 33 are at the same height position. In this embodiment, the limiting opening 31 can specifically be a circular opening; in this way, it can be ensured that the vapor deposition angle α of the vapor deposition nozzle 21 corresponding to the limiting opening 31 is the same in all directions, thereby reducing the risk of vapor deposition material forming on the auxiliary electrode.

[0106] In this embodiment, the vapor deposition nozzle 21 is located at the center of the limiting opening 31.

[0107] In another embodiment, see Figure 5 and Figure 6 , Figure 5 A simplified structural diagram of a vapor deposition apparatus provided in another embodiment of this application; Figure 6 for Figure 5 The top view of the corresponding limiting plate mechanism 30. Along the direction Z perpendicular to the plane where the vapor deposition source 20 is located, at least two levels of limiting plates in the same limiting plate mechanism 30 are at different height positions. The limiting plate mechanism 30 includes a primary limiting plate 32 and a secondary limiting plate 33 as an example. The primary limiting plate 32 and the secondary limiting plate 33 are at different height positions along the direction Z perpendicular to the plane where the corresponding column of vapor deposition sources 20 is located. The distance between the orthographic projection of the first arc-shaped groove 321 onto the plane of the corresponding column of vapor deposition sources 20 and the corresponding vapor deposition nozzle 21 is the first distance R1; the distance between the first-level limiting plate 32 along the direction perpendicular to the plane of the corresponding column of vapor deposition sources 20 and the corresponding vapor deposition nozzle 21 is the first height H1; the distance between the orthographic projection of the second arc-shaped groove 331 onto the plane of the corresponding column of vapor deposition sources 20 and the corresponding vapor deposition nozzle 21 is the second distance R2; the distance between the second-level limiting plate 33 along the direction perpendicular to the plane of the corresponding column of vapor deposition sources 20 and the corresponding vapor deposition nozzle 21 is the second height H2; wherein the first height H1 is less than the second height H2, and the first distance R1 is less than the second distance R2. This ensures that the vapor deposition angles α of the evaporation nozzles 21 along the circumferential direction of the limiting openings 31 formed by the multi-level limiting plates are all the same, or that the differences between the vapor deposition angles α are within a preset range.

[0108] In this embodiment, combined with Figure 6 It is understood that the limiting opening 31 corresponding to this embodiment may be elliptical.

[0109] In some embodiments, see Figure 7 and Figure 8This diagram illustrates the restrictive opening 31 formed by different types of secondary restrictive plates 33 and primary restrictive plates 32. Within the same restrictive plate mechanism 30, two primary restrictive plates 32 can move closer or further apart along a first direction X; and / or two opposing secondary restrictive plates 33 can also move closer or further apart along a second direction Y. The vapor deposition apparatus further includes a first moving mechanism, comprising a drive member and two moving arms connected to the drive member. The two primary restrictive plates 32 are respectively connected to the two moving arms. The drive member drives the two moving arms to move closer or further apart along the first direction X, thereby causing the two primary restrictive plates 32 to move closer or further apart. The drive member can be a motor or a pump. The vapor deposition apparatus also includes a second moving mechanism, which is connected to each of the two opposing secondary restrictive plates 33 and is used to drive the two secondary restrictive plates 33 to move closer or further apart. The specific driving method of the second moving mechanism can be similar to that of the first moving mechanism.

[0110] The arc length and central angle of the first arc groove 321 can satisfy the pixel openings 121 of different diameters.

[0111] In one embodiment, in the same limiting plate mechanism 30, two primary limiting plates 32 can move closer to or further away from each other along a first direction X; the limiting plate mechanism 30 includes a first type of secondary limiting plate 33 and a second type of secondary limiting plate 33, the first type of secondary limiting plate 33 or the second type of secondary limiting plate 33 being detachably connected to the primary limiting plate 32; the arc length and central angle corresponding to the second arc groove 331 on each type of secondary limiting plate 33 are different.

[0112] In practical use, when the primary limiting plate 32 and the secondary limiting plate 33 are at the same height, one type of secondary limiting plate 33 can be detachably connected to the primary limiting plate 32. Thus, the corresponding type of secondary limiting plate 33 can be selected and connected to the primary limiting plate 32 according to the diameter of the pixel opening 121 to form a limiting opening 31 of the corresponding size. This allows the limiting plate mechanism 30 to perform vapor deposition on pixel openings 121 of different diameters without requiring different vapor deposition devices, resulting in better applicability and lower cost.

[0113] Combination Figure 7 and Figure 8 , Figure 8 for Figure 7 After the two primary limiting plates 32 move away from each other along the first direction X, a secondary limiting plate 33 of another type is connected to the two primary limiting plates 32 to form an enclosure that is different from the one in the first direction X. Figure 7 Another size of the restricted opening 31 is shown.

[0114] Similarly, when the primary limiting plate 32 and the secondary limiting plate 33 are on different planes, another matching type of secondary limiting plate 33 can be selected to form a limiting opening 31 of a corresponding size with the primary limiting plate 32 according to the actual diameter of the pixel opening 121, so that the vapor deposition device can perform vapor deposition on pixel openings 121 of different diameters.

[0115] The vapor deposition apparatus provided in this application includes at least one row of vapor deposition sources 20 and at least one limiting plate mechanism 30. Each row of vapor deposition sources 20 includes at least one vapor deposition nozzle 21, and the vapor deposition source 20 is configured to eject vapor deposition material from the vapor deposition nozzle 21. One limiting plate mechanism 30 is provided corresponding to one row of vapor deposition sources 20. The limiting plate mechanism 30 is disposed on one side of the corresponding vapor deposition nozzle 21, and the orthographic projection of the limiting plate mechanism 30 on the plane where the corresponding row of vapor deposition sources 20 is located forms a limiting opening 31, which covers the corresponding vapor deposition nozzle 21. By making the limiting opening 31 a closed loop, the vapor deposition apparatus can limit the vapor deposition angle α at 360° using the limiting plate mechanism 30. Therefore, the limiting plate mechanism 30 can limit the vapor deposition angle α not only in the scanning direction but also in other vapor deposition directions. Furthermore, by making the edge of the limiting opening 31 along its circumferential direction arc-shaped, the vapor deposition apparatus can keep the difference of the vapor deposition angle α corresponding to the limiting opening 31 along its circumferential direction within a preset range, thereby reducing the risk of leakage of the final display panel caused by the vapor deposition material being deposited onto the auxiliary electrode of the film-forming substrate 100.

[0116] In one embodiment, see Figure 9 , Figure 9 This is a flowchart of a method for manufacturing a display panel according to an embodiment of this application. The method includes:

[0117] Step S1: Provide a film-forming carrier plate 100; the film-forming carrier plate 100 includes a substrate 11, a pixel definition layer 12, a first electrode 13, and an isolation structure 14; wherein, the pixel definition layer 12 is disposed on the substrate 11, the pixel definition layer 12 includes a pixel definition portion, and the pixel definition portion surrounds to form a pixel opening 121; the first electrode 13 is disposed on the substrate 11, and at least a portion of the first electrode 13 is exposed through the pixel opening 121; the isolation structure 14 includes a first isolation portion 141 and a second isolation portion 142; the second isolation portion 142 is disposed on the side surface of the first isolation portion 141 away from the substrate 11; and the orthographic projection of the side of the first isolation portion 141 away from the substrate 11 on the substrate 11 is located within the orthographic projection of the second isolation portion 142 on the substrate 11.

[0118] The specific structure of the film-forming carrier plate 100 can be found in the relevant description above. The specific process for forming the isolation structure can be found in the relevant processes for forming the isolation structure in patents CN118678772A, CN118870876A, and CN118870915A.

[0119] Step S2: Using the vapor deposition apparatus provided in any of the above embodiments, a vapor deposition film with a specified pattern is formed in the pixel opening 121.

[0120] In one embodiment, the vapor-deposited film is formed within the isolation opening enclosed by the isolation structure 14, and the vapor-deposited film is spaced apart from the isolation structure 14.

[0121] The specific structure and function of the vapor deposition apparatus can be found in the description above. In the specific implementation process, the film-forming carrier plate 100 is placed on the support portion 40, and the pixel opening 121 of the film-forming carrier plate 100 is oriented towards the vapor deposition source 20. Then, the vapor deposition apparatus is turned on so that the vapor deposition material is deposited at least within the pixel opening 121 of the film-forming carrier plate 100 at a preset vapor deposition angle α, thereby forming a corresponding vapor-deposited film within the pixel opening 121.

[0122] In some embodiments, the entire surface of the substrate 100 to be coated can be vapor-deposited, wherein the portion of the vapor-deposited material is located within the pixel opening 121.

[0123] The vapor-deposited film is located on the side of the first electrode 13 facing away from the substrate 11 and is spaced apart from the isolation structure 14. Specifically, the vapor-deposited film is spaced apart from the first isolation portion 141. When the isolation structure 14 also includes a third isolation portion 143, the vapor-deposited film is further spaced apart from the third isolation portion 143 to prevent the vapor-deposited film from overlapping with the isolation structure 14, which could lead to leakage in the final display panel.

[0124] The vapor-deposited film can be one or more of the hole injection layer (HIL), hole transport layer (HTL), and charge generation layer (CGL) within the light-emitting functional layer.

[0125] The above are merely embodiments of this application and do not limit the scope of this patent application. Any equivalent structural or procedural changes made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A vapor deposition apparatus configured to deposit a vapor deposition film of a predetermined pattern onto a substrate for film deposition, characterized in that, The vapor deposition apparatus includes: At least one column of vapor deposition sources, each column of vapor deposition sources including at least one vapor deposition nozzle, the vapor deposition sources being configured to eject vapor deposition material from the vapor deposition nozzle; At least one limiting plate mechanism is provided, which is correspondingly disposed to the vapor deposition source; the limiting plate mechanism is disposed on one side of the corresponding vapor deposition nozzle, and the orthographic projection of the limiting plate mechanism on the plane where the vapor deposition source is located in the corresponding column forms a limiting opening, which covers the corresponding vapor deposition nozzle; The limiting opening is in the form of a closed loop, and the edge of the limiting opening along its circumferential direction is an arc-shaped edge.

2. The vapor deposition apparatus according to claim 1, characterized in that, Each of the aforementioned limiting plate mechanisms includes multiple levels of limiting plates, and at least one side of each level of the limiting plate is provided with an arc-shaped groove, the arc-shaped groove being recessed from one side of the limiting plate toward the other side; wherein, the arc-shaped groove on the multiple levels of limiting plates forms the limiting opening by the orthographic projection of the corresponding column of the vapor deposition source on the plane.

3. The vapor deposition apparatus according to claim 2, characterized in that, The evaporation angle is defined as the angle between the line connecting the evaporation nozzle and the edge of the corresponding limiting opening and the plane where the evaporation source of the corresponding column is located; wherein, among all the evaporation angles corresponding to the limiting opening, the difference between the maximum evaporation angle and the minimum evaporation angle is less than or equal to 5°.

4. The vapor deposition apparatus according to claim 2, characterized in that, Each of the aforementioned limiting plate mechanisms includes: Two primary limiting plates; a first arc-shaped groove is formed on one side of each primary limiting plate; the first arc-shaped grooves on the two primary limiting plates are arranged opposite each other along a first direction; At least two secondary limiting plates, each secondary limiting plate having a second arc-shaped groove on at least one side, the second arc-shaped grooves on each pair of secondary limiting plates being arranged opposite each other along a second direction, and forming a limiting opening with the orthographic projection of the corresponding two first arc-shaped grooves on the plane where the vapor deposition source is located in the corresponding column; wherein, the first direction intersects the second direction; Preferably, the first direction is perpendicular to the second direction; Preferably, the first arc-shaped groove is provided on only one side of the primary limiting plate.

5. The vapor deposition apparatus according to claim 4, characterized in that, Each column of the vapor deposition source includes multiple vapor deposition nozzles; The orthographic projection of the limiting plate mechanism onto the plane where the vapor deposition source is located in the corresponding column has a plurality of limiting openings; one limiting opening corresponds to one vapor deposition nozzle; Each of the aforementioned restrictive openings is a closed loop, and the edge of each of the aforementioned restrictive openings along its circumferential direction is an arc-shaped edge; Preferably, the number of vapor deposition nozzles and the number of limiting openings in each column of vapor deposition sources are both three.

6. The vapor deposition apparatus according to claim 5, characterized in that, Each of the first-level limiting plates has a plurality of first arc-shaped grooves spaced apart along its length; the plurality of first arc-shaped grooves on two of the first-level limiting plates are arranged opposite each other along the first direction; The number of secondary restriction plates is multiple, and the multiple secondary restriction plates are spaced apart along the second direction. The second arc-shaped groove on each two adjacent secondary restriction plates and the corresponding two first arc-shaped grooves are projected onto the plane where the evaporation source is located to form a restriction opening.

7. The vapor deposition apparatus according to any one of claims 1-6, characterized in that, The vapor deposition apparatus includes a first column of vapor deposition sources, a second column of vapor deposition sources, and a third column of vapor deposition sources; wherein, the second column of vapor deposition sources is provided with a corresponding limiting plate mechanism.

8. The vapor deposition apparatus according to any one of claims 4-6, characterized in that, The central angle subtended by the first arcuate groove is 90°-150°; and / or The central angle opposite to the second arc-shaped groove is 90°-150°.

9. The vapor deposition apparatus according to claim 8, characterized in that, The central angles of the first arc-shaped groove and the second arc-shaped groove are both 90°.

10. The vapor deposition apparatus according to any one of claims 2-6, characterized in that, Along a direction perpendicular to the plane where the vapor deposition source is located, the multi-level limiting plates of the same limiting plate mechanism are at the same height position; the limiting opening is a circular opening; Preferably, the vapor deposition nozzle is located at the center of the restricted opening.

11. The vapor deposition apparatus according to any one of claims 4-6, characterized in that, Along a direction perpendicular to the plane where the vapor deposition source is located, the primary limiting plate and the secondary limiting plate of the same limiting plate mechanism are at different height positions; wherein, the distance between the orthographic projection of the first arc-shaped groove on the plane where the vapor deposition source is located in the corresponding column and the corresponding vapor deposition nozzle is a first distance; the distance between the primary limiting plate along a direction perpendicular to the plane where the vapor deposition source is located in the corresponding column and the corresponding vapor deposition nozzle is a first height; the distance between the orthographic projection of the second arc-shaped groove on the plane where the vapor deposition source is located in the corresponding column and the corresponding vapor deposition nozzle is a second distance; the distance between the secondary limiting plate along a direction perpendicular to the plane where the vapor deposition source is located in the corresponding column and the corresponding vapor deposition nozzle is a second height; wherein, the first height is less than the second height, and the first distance is less than the second distance.

12. The vapor deposition apparatus according to any one of claims 1-6, characterized in that, The vapor-deposited film includes one or more of the following: a hole injection layer, a hole transport layer, and a charge generation layer; Preferably, the film-forming carrier plate comprises: substrate; A pixel definition layer is disposed on the substrate, the pixel definition layer includes a pixel definition portion, the pixel definition portion enclosing a pixel opening; A first electrode is disposed on the substrate, and at least a portion of the first electrode is exposed through the pixel opening; An isolation structure includes a first isolation portion and a second isolation portion; the second isolation portion is disposed on the side surface of the first isolation portion away from the substrate; and the orthographic projection of the side of the first isolation portion away from the substrate on the substrate is located within the orthographic projection of the second isolation portion on the substrate.

13. The vapor deposition apparatus according to any one of claims 3-5, characterized in that, In the same limiting plate mechanism, two primary limiting plates may move closer to or further away from each other along the first direction; and / or In the same limiting plate mechanism, each pair of oppositely arranged secondary limiting plates can move closer to or further away from each other along the second direction.

14. The vapor deposition apparatus according to any one of claims 3-5, characterized in that, In the same limiting plate mechanism, the two primary limiting plates can move closer to or further away from each other along the first direction; The limiting plate mechanism includes a first type of secondary limiting plate and a second type of secondary limiting plate, wherein the first type of secondary limiting plate or the second type of secondary limiting plate is detachably connected to the first type of limiting plate; wherein the arc length and central angle of the second arc groove on the different types of secondary limiting plates are different.

15. A method for manufacturing a display panel, characterized in that, include: A film-forming carrier plate is provided; the film-forming carrier plate includes a substrate, a pixel definition layer, a first electrode, and an isolation structure; wherein, the pixel definition layer is disposed on the substrate, the pixel definition layer includes a pixel definition portion, the pixel definition portion enclosing a pixel opening; the first electrode is disposed on the substrate, and at least a portion of the first electrode is exposed through the pixel opening; the isolation structure includes a first isolation portion and a second isolation portion; the second isolation portion is disposed on the side surface of the first isolation portion away from the substrate; and the orthographic projection of the side of the first isolation portion away from the substrate on the substrate is located within the orthographic projection of the second isolation portion on the substrate; The vapor deposition apparatus as described in any one of claims 1-14 is used to deposit a vapor deposition film of a specified pattern within the pixel opening.

16. The preparation method according to claim 15, characterized in that, The vapor-deposited film is formed within the isolation opening enclosed by the isolation structure, and the vapor-deposited film is spaced apart from the isolation structure. The vapor-deposited film is one or more of the following: a hole injection layer, a hole transport layer, and a charge generation layer.

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