Vapor deposition apparatus and vapor deposition method

Abstract

The application relates to an evaporation device and an evaporation method. The evaporation device comprises an evaporation source, a connecting piece and a flow guide assembly. The evaporation source comprises an evaporation cavity for placing evaporation material and an evaporation hole in communication with the evaporation cavity. A plurality of evaporation sources are arranged at intervals along a first direction. The connecting piece is arranged at intervals opposite to the evaporation source along a second direction, and is configured to connect a piece to be evaporated. The second direction intersects the first direction. The flow guide assembly is located between the evaporation source and the connecting piece along the second direction. The projections of the evaporation holes of the plurality of evaporation sources in the second direction are all located inside the projection of the flow guide assembly in the second direction. In the embodiments of the application, the evaporation device and the evaporation method can ensure the evaporation process efficiency while improving the thickness uniformity of the thin film formed on the piece to be evaporated.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing equipment technology, and in particular to a vapor deposition apparatus and vapor deposition method. Background Technology

[0002] Evaporation equipment is a device used to deposit thin films on the surface of a workpiece. It is widely used in semiconductors, optoelectronic devices, display technology, solar cells and other fields. In a vacuum environment, evaporation equipment heats and vaporizes the evaporation material, and the gaseous atoms or molecules condense on the surface of the workpiece to form a thin film.

[0003] In practical applications, in order to ensure the efficiency of the vapor deposition process, vapor deposition equipment usually includes multiple vapor deposition sources, each with vapor deposition holes. However, the film formed on the workpiece often exhibits uneven thickness. Summary of the Invention

[0004] The vapor deposition apparatus and method provided in this application can improve the uniformity of the film thickness formed on the workpiece while ensuring the efficiency of the vapor deposition process.

[0005] In a first aspect, embodiments of this application provide a vapor deposition apparatus. The vapor deposition apparatus includes a vapor deposition source, a connector, and a flow guiding assembly. The vapor deposition source includes a vapor deposition chamber for placing vapor deposition material and vapor deposition holes communicating with the vapor deposition chamber. Multiple vapor deposition sources are provided, spaced apart along a first direction. The connector is positioned opposite to and spaced apart from the vapor deposition sources in a second direction, and is configured to connect to a workpiece to be vapor-deposited. The second direction intersects the first direction. The flow guiding assembly is located between the vapor deposition sources and the connector along the second direction. The projections of the vapor deposition holes of the multiple vapor deposition sources in the second direction are all located within the projection of the flow guiding assembly in the second direction. The flow guiding assembly includes a flow guiding channel extending through the second direction. The flow guiding channel includes a first portion and a second portion that communicate with each other along the second direction. The first portion is located on the side of the second portion closer to the vapor deposition source, and the size of the first portion in the first direction is smaller than the size of the second portion in the first direction.

[0006] In some embodiments, the flow guiding assembly includes multiple sets of flow guiding structures, each corresponding to a vapor deposition source. The flow guiding structures form flow guiding channels along a second direction, and the projection of the vapor deposition holes in the second direction is located within the projection of the flow guiding channels in the second direction. Optionally, the flow guiding structure includes a first flow guiding member, the first flow guiding member having a first channel formed through it along the second direction, and at least a portion of the vapor deposition holes being located within the first channel. Optionally, the distance between the end of the first flow guiding member facing the connector and the connector in the second direction is D1, where 400mm ≤ D1 ≤ 800mm. Optionally, the flow guiding structure further includes a second flow guiding member, the second flow guiding member having a second channel formed through it along the second direction, the second flow guiding member being located within the first channel, the vapor deposition holes being located within the second channel, and the end of the second flow guiding member facing the connector being located on the side of the first flow guiding member facing the connector that is away from the connector. Optionally, the second flow guiding member and the first flow guiding member are spaced apart along the first direction. Optionally, the spaced distance between the second flow guiding member and the first flow guiding member along the first direction is adjustable. Optionally, the first flow guide is slidably disposed relative to the first flow guide in the second direction. Optionally, the first flow guides in adjacent flow guide structures are in contact with each other.

[0007] In some embodiments, the vapor deposition apparatus further includes a vapor deposition chamber with an internal cavity structure. The vapor deposition chamber includes a first wall and a second wall spaced apart in a second direction, and a partition between the first wall and the second wall. The partition divides the cavity structure along the second direction into a first cavity facing the first wall and a second cavity facing the second wall. The portion of the vapor deposition source surrounding the vapor deposition cavity is located in the second cavity, at least a portion of the vapor deposition orifice is located in the first cavity, and a connecting member is located in the first cavity. Optionally, a flow guiding structure is connected to the partition and is located in the first cavity. Optionally, the flow guiding structure is slidably disposed relative to the partition along a first direction to adjust the relative position between the vapor deposition orifice and the sidewall of the flow guiding channel. Optionally, the flow guiding structure includes a first flow guiding member and a second flow guiding member. A first channel is formed inside the first flow guiding member, and a second channel is formed inside the second flow guiding member. The second flow guiding member is located inside the first channel, and the first flow guiding member is slidably connected to the partition along the first direction, and the second flow guiding member is slidably connected to the partition along the first direction.

[0008] In some embodiments, the flow guiding structure includes a first flow guide and a second flow guide separately disposed along a first direction, the first flow guide and the second flow guide forming a flow guiding channel. Optionally, the inner diameter of the flow guiding channel gradually increases along the side of the vapor deposition source pointing towards the connector. Optionally, the distance between the end of the first flow guide facing the connector and the connector in the second direction is D2, 400mm≤D2≤800mm, and the distance between the end of the second flow guide facing the connector and the connector in the second direction is D3, 400mm≤D3≤800mm. Optionally, the vapor deposition apparatus further includes a vapor deposition chamber, the vapor deposition chamber forming a cavity structure, the vapor deposition source, the connector, and the flow guiding structure are all located inside the cavity structure, a partition is disposed inside the vapor deposition chamber, the partition is located between the vapor deposition source and the flow guiding structure along the second direction, the first flow guide and the second flow guide are both connected to the partition, the tilt angle of the first flow guide relative to the partition is adjustable, and the tilt angle of the second flow guide relative to the partition is adjustable. Optionally, the first guide fluid and the second guide fluid have a gap in the second circumferential direction. The flow guiding structure also includes a flexible guide fluid connecting the first guide fluid and the second guide fluid in the second circumferential direction. The first guide fluid, the flexible guide fluid, and the second guide fluid together form a flow guiding channel. Optionally, the side of the first guide fluid facing the connector includes a first transition section, the diameter of which is equal everywhere in the second circumferential direction. The side of the second guide fluid facing the connector includes a second transition section, the diameter of which is equal everywhere in the second circumferential direction.

[0009] In some embodiments, the flow guiding structure includes a first flow guide and a second flow guide separately disposed along a second direction. A first channel is disposed through the first flow guide along the second direction, and a second channel is disposed through the second flow guide along the second direction. The first channel and the second channel are joined together along the second direction to form the flow guiding channel. Optionally, the first flow guide is located between the second flow guide and the vapor deposition source, and the vapor deposition hole is located inside the first channel. The inner diameter of the first channel gradually increases along the direction from the vapor deposition source to the connector. Optionally, the second flow guide is located between the first flow guide and the connector. The diameter of the second channel facing the first channel is not less than the diameter of the first channel facing the second channel, and the diameter of the second channel away from the first channel is not less than the diameter of the second channel facing the first channel. Optionally, the side of the second channel facing the connector includes a transition channel, and the diameter of the transition channel ring along the second direction is equal everywhere. Optionally, the outer diameters of the first flow guide and the second flow guide ring along the second direction are equal.

[0010] In some embodiments, the flow guiding component includes a flow guiding structure that corresponds to the vapor deposition holes of multiple vapor deposition sources. Multiple flow guiding channels are formed on the flow guiding structure along a second direction, and the projections of the multiple vapor deposition holes in the second direction are located within the projections of the flow guiding structure in the second direction. Optionally, in the second direction, the distance between the flow guiding structure and the vapor deposition sources is less than the distance between the flow guiding structure and the connector. Optionally, a flow guide is provided protruding from the side of the flow guiding structure facing the vapor deposition sources. The flow guide is arranged in a ring along the second direction and forms an annular space, and the projections of the multiple vapor deposition holes in the second direction are located within the annular space. Optionally, the flow guide is inclined, and the diameter of the opening on the side of the annular space facing the vapor deposition sources is larger than the diameter of the opening on the side of the annular space away from the vapor deposition sources.

[0011] In some embodiments, the vapor deposition apparatus further includes a temperature regulating component connected to the flow guiding component, configured to regulate the temperature of the flow guiding component. Optionally, the temperature regulating component includes a first regulating member and a second regulating member spaced apart along a second direction, the first regulating member and the second regulating member being independently adjustable. Optionally, the first regulating member is located along the second direction between the second regulating member and the connecting member, the first regulating member including a first temperature and a second temperature, the first regulating member being at the first temperature during the vapor deposition stage and at the second temperature during the removal stage, the first temperature being lower than the melting point of the vapor deposition material and the second temperature being higher than the melting point of the vapor deposition material.

[0012] In some embodiments, the vapor deposition apparatus further includes a collection structure, which includes a collection cavity. The collection structure is located between the flow guiding component and the vapor deposition source along a second direction, and the projection of the flow guiding component in the second direction at least partially overlaps with the projection of the collection cavity in the second direction. Optionally, the vapor deposition apparatus further includes a vapor deposition chamber, which forms a cavity structure inside. The vapor deposition source, the connector, and the flow guiding structure are all located inside the cavity structure. A partition is provided inside the vapor deposition chamber, which divides the cavity structure into a first cavity and a second cavity. The portion of the vapor deposition source that surrounds the vapor deposition cavity is located in the second cavity, at least a portion of the vapor deposition hole is located in the first cavity, the connector and the flow guiding structure are located in the first cavity, and the collection cavity is located inside the partition. Optionally, the flow guiding structure includes a first flow guiding member, which forms a first channel inside. The first flow guiding member is connected to the partition, and the projection of the inner wall of the first flow guiding member in the second direction is located inside the collection cavity. Optionally, the flow guiding structure includes a second flow guiding member, a second channel is formed inside the second flow guiding member, the second flow guiding member is located inside the first channel, one end of the second flow guiding member facing the connector is located on the side of the first flow guiding member facing the connector away from the connector, and an arc protrusion is provided on the inner sidewall of the first flow guiding member, the projection of the arc protrusion in the first direction overlaps with the second flow guiding member.

[0013] In some embodiments, both the vapor deposition source and the flow guiding assembly are movably disposed relative to the connecting member. Optionally, the vapor deposition apparatus further includes a vapor deposition chamber, inside which support members and partition members are spaced apart and connected to each other along a second direction. The vapor deposition source is connected to the support member and located between the support member and the partition member. The flow guiding assembly is connected to the side of the partition member opposite to the support member. The support member is movably disposed relative to the connecting member. Optionally, the vapor deposition chamber includes a first wall and a second wall spaced apart in the second direction, and the support member is slidably connected to the second wall. Optionally, the vapor deposition chamber includes a first wall and a second wall spaced apart in the second direction, and the support member is slidably connected to the second wall along a straight trajectory. Optionally, the vapor deposition chamber includes a first wall and a second wall spaced apart in the second direction, and the support member is slidably connected to the second wall along an arc trajectory.

[0014] Secondly, embodiments of this application provide a vapor deposition method. Based on the vapor deposition apparatus of the first aspect of this application, the flow guiding component includes multiple sets of flow guiding structures, each flow guiding structure corresponding to a vapor deposition source. Each flow guiding structure includes a first flow guiding member, with a first channel formed through the interior of the first flow guiding member along a first direction. The flow guiding structure also includes a second flow guiding member, with a second channel formed through the interior of the second flow guiding member along the first direction. Vapor deposition holes are located inside the second channel. The end of the second flow guiding member facing the connector is located on the side of the first flow guiding member facing the connector, away from the connector. The positions of both the second and first flow guiding members are adjustable along the first direction. This vapor deposition method includes:

[0015] S10. Adjust the position of the second flow guide relative to the vapor deposition hole, and determine the distance between the second flow guide and the vapor deposition hole along the first direction based on the relative position of the vapor deposition source relative to the connector.

[0016] S20. Adjust the position of the first guide member relative to the second guide member. Based on the distance between adjacent vapor deposition sources and the ejection angle of the vapor deposition sources, determine the inclination angle of the line connecting the end of the first guide member facing the connector and the end of the second guide member facing the connector, so as to determine the distance between the first guide member and the second guide member along the first direction.

[0017] According to the vapor deposition apparatus and method provided in this application, the vapor deposition apparatus includes a vapor deposition source for carrying vapor deposition material and a connector for connecting the workpiece to be vapor-deposited. The vapor deposition source includes a vapor deposition chamber for placing the vapor deposition material and a vapor deposition hole communicating with the vapor deposition chamber. During the vapor deposition process, the vapor deposition material inside the vapor deposition chamber is heated to cause the vapor deposition material to evaporate and form vapor deposition gas, which flows out from the vapor deposition hole. The connector is spaced apart from the vapor deposition source in a second direction. When the workpiece to be vapor-deposited is connected to the connector, the workpiece to be vapor-deposited and the vapor deposition source are positioned opposite each other, and the vapor deposition gas can deposit a film on the workpiece to be vapor-deposited. To ensure uniform film thickness on the workpiece to be vapor-deposited, the vapor deposition apparatus provided in this application further includes a flow guiding component. The flow guiding component is disposed between the vapor deposition source and the connector along a second direction. When the vapor deposition gas flows out from the vapor deposition hole, the vapor deposition gas passes through the flow guiding component. The flow guiding component can guide the flow direction of the vapor deposition gas to reduce the probability of the vapor deposition gas overlapping in the gap space between the vapor deposition source and the connector, thereby improving the uniformity of the film thickness on the workpiece to be vapor-deposited. Attached Figure Description

[0018] The features, advantages, and technical effects of exemplary embodiments of this application will now be described with reference to the accompanying drawings.

[0019] Figure 1 This is a first front view structural schematic diagram of a vapor deposition apparatus provided in some embodiments of this application;

[0020] Figure 2 This is a first cross-sectional view of a vapor deposition apparatus provided in some embodiments of this application;

[0021] Figure 3 This is a second front view schematic diagram of a vapor deposition apparatus provided in some embodiments of this application;

[0022] Figure 4 This is a second cross-sectional view of a vapor deposition apparatus provided in some embodiments of this application;

[0023] Figure 5 This is a third front view structural schematic diagram of a vapor deposition apparatus provided in some embodiments of this application;

[0024] Figure 6 This is a third cross-sectional view of a vapor deposition apparatus provided in some embodiments of this application;

[0025] Figure 7 This is a fourth front view structural schematic diagram of a vapor deposition apparatus provided in some embodiments of this application;

[0026] Figure 8 This is a fourth cross-sectional view of a vapor deposition apparatus provided in some embodiments of this application;

[0027] Figure 9 This is a fifth front view structural schematic diagram of a vapor deposition apparatus provided in some embodiments of this application;

[0028] Figure 10 This is a fifth cross-sectional view of a vapor deposition apparatus provided in some embodiments of this application;

[0029] Figure 11 This is a schematic flowchart of a vapor deposition method provided for some embodiments of this application.

[0030] Marker explanation:

[0031] 10. Evaporation source; 11. Evaporation chamber; 12. Evaporation hole;

[0032] 20. Connectors;

[0033] 30. Flow guiding component; 31. Flow guiding structure; 311. First flow guiding element; 3111. Arc-shaped protrusion; 312. Second flow guiding element; 313. First flow guiding element; 314. Second flow guiding element; 315. Flexible flow guiding element; 32. Drainage element; 321. Annular space;

[0034] 40. Evaporation chamber; 41. First wall; 42. Second wall; 43. Divider; 44. Support;

[0035] 50. Temperature regulating component; 51. First regulating element; 52. Second regulating element;

[0036] 60. Collection structure; 61. Collection cavity;

[0037] Q1, cavity structure; Q11, first cavity; Q12, second cavity;

[0038] T1, flow channel; T11, first section; T12, second section; T2, first channel; T3, second channel; T4, transition channel;

[0039] D1, First transition section; D2, Second transition section;

[0040] X, the first direction; Y, the second direction.

[0041] In the accompanying drawings, the same parts use the same reference numerals. The drawings are not drawn to scale. Detailed Implementation

[0042] The features and exemplary embodiments of various aspects of this application will be described in detail below. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain this application and not to limit it. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples.

[0043] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0044] Evaporation equipment is a device used to deposit thin films on the surface of a workpiece. It is widely used in semiconductors, optoelectronic devices, display technology, solar cells and other fields. In a vacuum environment, evaporation equipment heats and vaporizes the evaporation material, and the gaseous atoms or molecules condense on the surface of the workpiece to form a thin film.

[0045] In practical applications, in order to ensure the efficiency of the vapor deposition process, the vapor deposition equipment usually includes multiple vapor deposition sources. Each vapor deposition source is equipped with a vapor deposition hole. The vapor deposition gas formed after the vapor deposition material evaporates is ejected from the vapor deposition hole. There is an overlapping area between the ejection surfaces of each vapor deposition hole. This overlapping area causes a relatively thick film to be formed on the workpiece to be vapor deposited, resulting in uneven film thickness on the workpiece.

[0046] In view of this, firstly, please refer to Figure 1 and Figure 2This application provides a vapor deposition apparatus. The apparatus includes a vapor deposition source 10, a connector 20, and a flow guiding assembly 30. The vapor deposition source 10 includes a vapor deposition chamber 11 for placing vapor deposition material and vapor deposition holes 12 communicating with the vapor deposition chamber 11. Multiple vapor deposition sources 10 are provided, spaced apart along a first direction X. The connector 20 is positioned opposite and spaced apart from the vapor deposition sources 10 along a second direction Y. The connector 20 is configured to connect to the workpiece to be vapor-deposited. The second direction Y intersects the first direction X. The flow guiding assembly 30 is located between the vapor deposition sources 10 and the connector 20 along the second direction Y. The projections of the vapor deposition holes 12 of the multiple vapor deposition sources 10 along the second direction Y are all located within the projections of the flow guiding assembly 30 along the second direction Y. The flow guiding component 30 includes a flow guiding channel T1 that runs through the second direction Y. The flow guiding channel T1 includes a first part T11 and a second part T12 that are interconnected along the second direction Y. The first part T11 is located on the side of the second part T12 that is close to the vapor deposition source 10. The size of the first part T11 in the first direction X is smaller than the size of the second part T12 in the first direction X.

[0047] The vapor deposition apparatus provided in this application can be used for the fabrication of semiconductor devices or display devices. In the fabrication of semiconductor devices, this vapor deposition apparatus can be used to form various conductive, insulating, and semi-conductive thin films, such as metal layers like aluminum and copper in chip manufacturing. By precisely controlling the vapor deposition parameters, high-precision and high-uniformity electrode fabrication can be achieved, ensuring the performance of the semiconductor device. In the fabrication of display devices such as OLEDs and LCDs, this vapor deposition apparatus is used to manufacture electrodes and optical films to enhance contrast, color saturation, and response time. For example, this vapor deposition apparatus can be used to manufacture the organic light-emitting layer and electrode layer in a display panel.

[0048] The vapor deposition apparatus includes a vapor deposition source 10 for carrying the vapor deposition material and a connector 20 for connecting the workpiece to be vapor-deposited. The vapor deposition source 10 includes a vapor deposition chamber 11 for placing the vapor deposition material and a vapor deposition hole 12 communicating with the vapor deposition chamber 11. During the vapor deposition process, the vapor deposition material inside the vapor deposition chamber 11 is heated to evaporate the material and form vapor deposition gas, which flows out through the vapor deposition hole 12. To improve the efficiency of the vapor deposition process, multiple vapor deposition sources 10 are usually provided in practice. The multiple vapor deposition sources 10 are spaced apart along a first direction X, where the first direction X can be any direction in the horizontal plane, and the multiple vapor deposition sources 10 are distributed at intervals in the horizontal direction.

[0049] The connector 20 is spaced apart from the vapor deposition source 10 in the second direction Y. When the workpiece to be vapor-deposited is connected to the connector 20, there is a gap between the surface of the workpiece facing the vapor deposition source 10 and the vapor deposition source 10. During the heating process of the vapor deposition source 10, the temperature of the vapor deposition material rises and evaporates to form vapor deposition gas. The vapor deposition gas flows out from the vapor deposition hole 12 and flows towards the workpiece to be vapor-deposited. As the vapor deposition gas flows towards the workpiece to be vapor-deposited, its own temperature gradually decreases. When the vapor deposition gas comes into contact with the workpiece to be vapor-deposited, by controlling the temperature of the surface of the workpiece to be vapor-deposited, the vapor deposition gas forms a film on the workpiece to be vapor-deposited, forming the desired film layer. The second direction Y can be a vertical direction. After the vapor deposition material is heated to form vapor deposition gas, the vapor deposition gas flows upward towards the workpiece to be vapor-deposited.

[0050] During the vapor deposition process, when the vapor deposition gas flows out from the vapor deposition hole 12, its flow direction is not fixed when it flows in the gap space between the vapor deposition source 10 and the connector 20. The vapor deposition gas ejected from multiple vapor deposition sources 10 has overlapping areas. The film thickness formed in the overlapping area is greater than the film thickness formed in other non-overlapping areas, which ultimately leads to uneven film thickness on the workpiece to be vapor deposited, affecting the product preparation yield.

[0051] To ensure uniform film thickness on the workpiece to be vapor-deposited, the vapor deposition apparatus provided in this application further includes a flow guiding component 30. The flow guiding component 30 is disposed between the vapor deposition source 10 and the connector 20 along the second direction Y. When the vapor deposition gas flows out from the vapor deposition hole 12, the vapor deposition gas passes through the flow guiding component 30. The flow guiding component 30 can guide the flow direction of the vapor deposition gas to a certain extent, thereby restricting the flow of the vapor deposition gas and reducing the probability of the vapor deposition gas overlapping in the gap space between the vapor deposition source 10 and the connector 20, thereby improving the uniformity of the film thickness on the workpiece to be vapor-deposited.

[0052] In this embodiment of the application, the projections of the evaporation holes 12 of the plurality of evaporation sources 10 in the second direction Y are all located inside the projection of the flow guiding component 30 in the second direction Y. That is, the flow guiding component 30 can restrict the evaporation gas flowing out of each evaporation source 10 so that the evaporation gas flowing out of each evaporation source 10 flows to the workpiece to be evaporated under the premise of flow direction guidance, so as to form a film layer with uniform thickness on the workpiece to be evaporated.

[0053] The flow guiding assembly 30 includes a flow guiding channel T1 extending along the second direction Y. The vapor deposition source 10 and the connector 20 are located on opposite sides of the flow guiding channel T1 along the second direction Y. When vapor deposition gas is ejected from the vapor deposition source 10, the vapor deposition gas flows through the flow guiding channel T1 to the workpiece to be vapor-deposited on the connector 20. The flow guiding channel T1 along the second direction Y includes a first part T11 and a second part T12 that are interconnected. The first part T11 is located on the side of the second part T12 closer to the vapor deposition source 10.

[0054] The dimension of the first part T11 in the first direction X is smaller than that of the second part T12 in the first direction X. It can be understood that when the vapor deposition gas is ejected from the vapor deposition source 10, it first enters the relatively smaller-diameter first part T11, and then continues into the relatively larger-diameter second part T12. By varying the diameters of the first part T11 and the second part T12, the vapor deposition gas can flow in a diffused manner within the guide channel T1, allowing the vapor deposition gas to reach a relatively large vapor deposition area on the workpiece. This guides the vapor deposition gas while improving the efficiency of the vapor deposition process.

[0055] In summary, in this embodiment, the vapor deposition apparatus includes a vapor deposition source 10 for carrying vapor deposition material and a connector 20 for connecting the workpiece to be vapor-deposited. The vapor deposition source 10 includes a vapor deposition chamber 11 for placing the vapor deposition material and a vapor deposition hole 12 communicating with the vapor deposition chamber 11. During the vapor deposition process, the vapor deposition material inside the vapor deposition chamber 11 is heated to evaporate the material and form vapor deposition gas, which flows out from the vapor deposition hole 12. The connector 20 is spaced apart from the vapor deposition source 10 in the second direction Y. When the workpiece to be vapor-deposited is connected to the connector 20, the workpiece to be vapor-deposited and the vapor deposition source 10 are positioned opposite each other, and the vapor deposition gas can deposit a film on the workpiece to be vapor-deposited. To ensure uniform film thickness on the workpiece to be vapor-deposited, the vapor deposition apparatus provided in this application further includes a flow guiding component 30. The flow guiding component 30 is disposed between the vapor deposition source 10 and the connector 20 along the second direction Y. When the vapor deposition gas flows out from the vapor deposition hole 12, the vapor deposition gas passes through the flow guiding component 30. The flow guiding component 30 can guide the flow direction of the vapor deposition gas to reduce the probability of the vapor deposition gas overlapping in the gap space between the vapor deposition source 10 and the connector 20, thereby improving the uniformity of the film thickness on the workpiece to be vapor-deposited.

[0056] In some embodiments, please refer to Figure 1 and Figure 2The flow guiding assembly 30 includes multiple sets of flow guiding structures 31, each corresponding to a vapor deposition source 10. Each flow guiding structure 31 forms a flow guiding channel T1 along the second direction Y. The projection of the vapor deposition hole 12 in the second direction Y is located inside the projection of the flow guiding channel T1 in the second direction Y. Optionally, the flow guiding structure 31 includes a first flow guiding member 311, which forms a first channel T2 extending through its interior along the second direction Y. At least a portion of the vapor deposition hole 12 is located inside the first channel T2. Optionally, the distance between the end of the first flow guiding member 311 facing the connector 20 and the connector 20 in the second direction Y is D1, where 400mm ≤ D1 ≤ 800mm. Optionally, the flow guiding structure 31 further includes a second flow guiding member 312. The second flow guiding member 312 forms a second channel T3 extending through its interior along the second direction Y. The second flow guiding member 312 is located inside the first channel T2, and the vapor deposition hole 12 is located inside the second channel T3. One end of the second flow guiding member 312 facing the connector 20 is located on the side of the first flow guiding member 311 facing the connector 20, away from the connector 20. Optionally, the second flow guiding member 312 and the first flow guiding member 311 are spaced apart along the first direction X. Optionally, the spaced distance between the second flow guiding member 312 and the first flow guiding member 311 along the first direction X is adjustable. Optionally, the first flow guiding member 311 is slidably disposed relative to the first flow guiding member 311 along the second direction Y. Optionally, the first flow guiding members 311 in adjacent flow guiding structures 31 are in contact with each other.

[0057] The flow guiding assembly 30 includes multiple sets of flow guiding structures 31, each flow guiding structure 31 corresponding to a vapor deposition source 10. Accordingly, each flow guiding structure 31 has a flow guiding channel T1 formed inside along the second direction Y. Each vapor deposition source 10 has a vapor deposition hole 12 corresponding to a flow guiding channel T1 in the second direction Y. The vapor deposition gas in the vapor deposition source 10 is ejected from the vapor deposition hole 12 and enters the flow guiding channel T1 in the flow guiding structure 31, then flows towards the workpiece to be vapor-deposited. Furthermore, the vapor deposition hole 12 can be located inside the flow guiding channel T1 so that the vapor deposition gas can directly enter the flow guiding channel T1 after being ejected, thereby improving the transfer efficiency of the vapor deposition gas.

[0058] Specifically, the flow guiding structure 31 includes a first flow guiding element 311, with a first channel T2 formed inside the first flow guiding element 311. One end of the first channel T2 facing the vapor deposition source 10 is arranged around a vapor deposition hole 12, and the vapor deposition hole 12 on the vapor deposition source 10 extends into the first channel T2 in the second direction Y. Meanwhile, to reduce the influence of the flow guiding structure 31 on the film formation on the workpiece to be vaporized, the flow guiding structure 31 and the connecting element 20 are spaced apart in the second direction Y. Considering the flow guiding effect of the flow guiding structure 31 on the vapor deposition gas, the distance between the flow guiding structure 31 and the connecting element 20 should not be too large. Practical experience has shown that a distance between 400mm and 800mm is more suitable.

[0059] Optionally, the flow guiding structure 31 further includes a second flow guiding element 312. The second flow guiding element 312 is located inside the first channel T2 and extends along the second direction Y to form a second channel T3. The vapor deposition hole 12 is located inside the second channel T3, and the end of the second flow guiding element 312 facing the connector 20 is located on the side opposite to the connector 20 at the end of the first flow guiding element 311 facing the connector 20. It can be understood that when the vapor deposition hole 12 is located inside the second channel T3, when the vapor deposition gas is ejected from inside the vapor deposition hole 12, it can directly enter the second channel T3 and then flow under the guidance of the second flow guiding element 312. Since the end of the second guide member 312 facing the connector 20 is located on the side of the first guide member 311 facing the connector 20 away from the connector 20, after the vapor deposition gas is transmitted inside the second channel T3, it can enter the first channel T2 for transmission. The diameter of the first channel T2 is larger than the diameter of the second channel T3. The second channel T3 corresponds to the vapor deposition hole 12, and the first channel T2 corresponds to the vapor deposition area on the workpiece to be vaporized. Based on the mutual nesting of the first guide member 311 and the second guide member 312, the size change of the guide channel T1 can be formed.

[0060] With the first guide element 311 and the second guide element 312 simultaneously provided, the vapor deposition gas is first transported in the second channel T3, and then enters the first channel T2 for transport. The dimensional change between the first channel T2 and the second channel T3 restricts the flow path of the vapor deposition gas. Furthermore, the first guide element 311 and the second guide element 312 are spaced apart to facilitate their interlocking.

[0061] When the first guide element 311 and the second guide element 312 are spaced apart, as the vaporizing gas flows from the second guide element 312 into the interior of the first guide element 311, the flow space of the vaporizing gas undergoes abrupt change due to the change in the inner diameter of the first channel T2 and the second channel T3. This change is determined by the spacing between the first guide element 311 and the second guide element 312. In practice, considering the different ejection angles of the vaporizing gas at the vaporization hole 12, the spacing between the first guide element 311 and the second guide element 312 can be adjusted so that the ejection angle at the vaporization hole 12 matches the inclination angle of the line connecting the end of the first guide element 311 away from the vaporization source 10 and the end of the second guide element 312 away from the vaporization source 10. This reduces the impact of the vaporizing gas on the sidewall of the guide channel T1 at the junction of the second channel T3 and the first channel T2, thereby improving the efficiency of the vaporization process.

[0062] Optionally, the first flow guide 311 can also be slidably disposed relative to the second flow guide 312 along the second direction Y to adjust the distance between the end of the first flow guide 311 away from the vapor deposition source 10 and the vapor deposition source 10, thereby adapting to different vapor deposition distances. Since the first flow guide 311 is located outside the second flow guide 312, the first flow guide 311 plays a decisive role in limiting the vapor deposition area on the workpiece to be vapor-deposited. In order to enable multiple vapor deposition sources 10 to have mutually independent vapor deposition areas, the first flow guides 311 in adjacent flow guide structures 31 can be arranged in contact with each other, so that the vapor deposition areas corresponding to multiple vapor deposition sources 10 are mutually independent and can cover the entire vapor deposition surface on the workpiece to be vapor-deposited.

[0063] In some embodiments, please refer to Figure 1 and Figure 2 The vapor deposition apparatus further includes a vapor deposition chamber 40, which forms a cavity structure Q1. The vapor deposition chamber 40 includes a first wall 41 and a second wall 42 spaced apart in the second direction Y, and a separator 43 located between the first wall 41 and the second wall 42. The separator 43 divides the cavity structure Q1 along the second direction Y into a first cavity Q11 facing the first wall 41 and a second cavity Q12 facing the second wall 42. The portion of the vapor deposition source 10 surrounding the vapor deposition cavity 11 is located in the second cavity Q12, at least a portion of the vapor deposition hole 12 is located in the first cavity Q11, and the connector 20 is located in the first cavity Q11. Optionally, a flow guiding structure 31 is connected to the separator 43 and is located in the first cavity Q11. Optionally, the flow guiding structure 31 is slidably disposed relative to the separator 43 along the first direction X to adjust the relative position between the vapor deposition hole 12 and the sidewall of the flow guiding channel T1. Optionally, the flow guiding structure 31 includes a first flow guiding member 311 and a second flow guiding member 312. A first channel T2 is formed inside the first flow guiding member 311, and a second channel T3 is formed inside the second flow guiding member 312. The second flow guiding member 312 is located inside the first channel T2. The first flow guiding member 311 is slidably connected to the separator 43 along the first direction X, and the second flow guiding member 312 is slidably connected to the separator 43 along the first direction X.

[0064] The vapor deposition apparatus also includes a vapor deposition chamber 40. The vapor deposition process is carried out inside the cavity structure Q1. The vapor deposition chamber 40 includes a first wall 41, a second wall 42, and a partition 43 located between the first wall 41 and the second wall 42 in the second direction Y. The partition 43 divides the cavity structure Q1 into a first cavity Q11 and a second cavity Q12. The portion of the vapor deposition source 10 that encloses the vapor deposition cavity 11 is located in the second cavity Q12, and at least a portion of the vapor deposition hole 12 is located in the first cavity Q11. The vapor deposition process is carried out in the first cavity Q11. The connector 20 and the flow guiding structure 31 are both located in the first cavity Q11, and the workpiece to be vapor-deposited is also located in the first cavity Q11 when it is connected to the connector 20. The vapor deposition gas in the vapor deposition source 10 is ejected from the vapor deposition hole 12 and enters the first cavity Q11, where it is deposited onto the workpiece to be vapor-deposited to form a film.

[0065] The flow guiding structure 31 can be connected to the separator 43. Alternatively, in other embodiments, the flow guiding structure 31 can also be disposed on the remaining sidewalls of the vapor deposition chamber 40. When the flow guiding structure 31 is connected to the separator 43, the flow guiding structure 31 can slide along the first direction X on the separator 43 to adjust the relative position between the vapor deposition hole 12 and the sidewall of the flow guiding channel T1. When the flow guiding structure 31 includes a first flow guiding member 311 and a second flow guiding member 312 nested together, the first flow guiding member 311 and the second flow guiding member 312 can slide independently relative to the separator 43 along the first direction X to adjust the interval between the first flow guiding member 311 and the second flow guiding member 312.

[0066] For the sliding between the first guide member 311 and the second guide member 312 along the second direction Y, the first guide member 311 can be connected to the second guide member 312, and the first guide member 311 can slide relative to the second guide member 312. Alternatively, the first guide member 311 can be connected to the separator 43, and the first guide member 311 can slide relative to the separator 43 along the second direction Y.

[0067] Of course, in other embodiments, the flow guiding structure 31 may also include a first flow guiding member 311, a second flow guiding member 312, and a third flow guiding member nested together. The first flow guiding member 311 has a first channel T2 extending through it along the second direction Y. The second flow guiding member 312 has a second channel T3 extending through it along the second direction Y. The third flow guiding member has a third channel extending through it along the second direction Y. The third flow guiding member is located inside the second flow guiding member 312, and the second flow guiding member 312 is located inside the first flow guiding member 311. The vapor deposition hole 12 is correspondingly located inside the third channel, thereby achieving a change in the size of the flow guiding channel T1. When only the first flow guiding member 311 is provided, the first channel T2 extends through it along the second direction Y, and the inner diameter of the first channel T2 changes to guide the vapor deposition gas.

[0068] In some embodiments, please refer to Figure 3 and Figure 4The flow guiding structure 31 includes a first flow guide 313 and a second flow guide 314 separately arranged along the first direction X, which together form a flow guiding channel T1. Optionally, the inner diameter of the flow guiding channel T1 gradually increases along the side of the vapor deposition source 10 pointing towards the connector 20. Optionally, the distance between the end of the first flow guide 313 facing the connector 20 and the connector 20 in the second direction Y is D2, where 400mm ≤ D2 ≤ 800mm, and the distance between the end of the second flow guide 314 facing the connector 20 and the connector 20 in the second direction Y is D3, where 400mm ≤ D3 ≤ 800mm. Optionally, the vapor deposition apparatus further includes a vapor deposition chamber 40, with a cavity structure Q1 formed inside the vapor deposition chamber 11. The vapor deposition source 10, the connector 20, and the flow guiding structure 31 are all located inside the cavity structure Q1. A partition 43 is provided inside the vapor deposition chamber 40, located between the vapor deposition source 10 and the flow guiding structure 31 along the second direction Y. A first flow guide 313 and a second flow guide 314 are both connected to the partition 43. The tilt angle of the first flow guide 313 relative to the partition 43 is adjustable, and the tilt angle of the second flow guide 314 relative to the partition 43 is also adjustable. Optionally, there is a gap between the first flow guide 313 and the second flow guide 314 along the second direction Y. The flow guiding structure 31 further includes a flexible flow guide 315 connected between the first flow guide 313 and the second flow guide 314 along the second direction Y. The first flow guide 313, the flexible flow guide 315, and the second flow guide 314 enclose a flow guiding channel T1. Optionally, the side of the first fluid guide 313 facing the connector 20 includes a first transition section D1, the diameter of the first transition section D1 ring in the second direction Y is equal everywhere, and the side of the second fluid guide 314 facing the connector 20 includes a second transition section D2, the diameter of the second transition section D2 ring in the second direction Y is equal everywhere.

[0069] The flow guiding structure 31 may further include a first guide fluid 313 and a second guide fluid 314 separately arranged along the first direction X, with the first guide fluid 313 and the second guide fluid 314 enclosing and forming a flow guiding channel T1. That is, the flow guiding channel T1 has two solid sidewalls along the first direction X, one part formed by the first guide fluid 313 and the other part by the second guide fluid 314. When the vapor deposition gas flows through the flow guiding channel T1, the vapor deposition gas is confined and guided on one side along the first direction X by the first guide fluid 313, and on the other side by the second guide fluid 314. Similarly, the inner diameter of the flow guiding channel T1 gradually increases along the side of the vapor deposition source 10 pointing towards the connector 20. That is, the distance between the first guide fluid 313 and the second guide fluid 314 along the side of the vapor deposition source 10 pointing towards the connector 20 gradually increases along the first direction X, so that the vapor deposition gas can smoothly pass through the flow guiding channel T1.

[0070] Meanwhile, to reduce the impact of the flow guiding structure 31 on the film formation on the workpiece to be deposited, the flow guiding structure 31 and the connector 20 are spaced apart in the second direction Y. While taking into account the flow guiding effect of the flow guiding structure 31 on the vapor deposition gas, the distance between the end of the first flow guide 313 facing the connector 20 and the connector 20 should not be too large. Practical experience has shown that a distance between the end of the first flow guide 313 facing the connector 20 and the connector 20 is more suitable. The distance between the end of the second flow guide 314 facing the connector 20 and the connector 20 follows the same principle and will not be elaborated further here.

[0071] When the flow guiding structure 31 includes a first flow guide 313 and a second flow guide 314 separately arranged along the first direction X, the structure of the vapor deposition apparatus may include a vapor deposition chamber 40. The vapor deposition chamber 40 has a cavity structure Q1 inside, where the vapor deposition source 10, the connector 20, and the flow guiding structure 31 are all located. A partition 43 is provided inside the vapor deposition chamber 40, positioned along the second direction Y between the vapor deposition source 10 and the flow guiding structure 31. Both the first flow guide 313 and the second flow guide 314 are connected to the partition 43. The tilt angle of the first flow guide 313 relative to the partition 43 can be adjusted, and the tilt angle of the second flow guide 314 relative to the partition 43 can also be adjusted, thereby adjusting the inner diameter of the flow guiding channel T1 so that the flow guiding channel T1 can be adapted to different vapor deposition processes.

[0072] When the tilt angle between the first guide fluid 313 and the second guide fluid 314 can be adjusted, in order to ensure the airtightness of the guide channel T1, the guide structure 31 also includes a flexible guide fluid 315 connected in the second direction Y between the first guide fluid 313 and the second guide fluid 314. The flexible guide fluid 315 can be adjusted to a certain extent with the tilt of the first guide fluid 313 and the second guide fluid 314 to ensure the airtightness of the guide channel T1.

[0073] It is understandable that when the vapor deposition gas flows inside the guide channel T1, its flow direction is limited by the extension direction of the sidewall of the guide channel T1. To ensure good vapor deposition between the vapor deposition gas and the workpiece, the side of the first guide fluid 313 facing the connector 20 includes a first transition section D1. The diameter of the first transition section D1 is uniform along the second direction Y. This means that when the vapor deposition gas flows inside the first transition section D1, its flow direction can be along the second direction Y towards the workpiece, so that the vapor deposition gas has a certain inertia to flow towards the workpiece when it exits the guide channel T1, ensuring the vapor deposition effect on the workpiece. Similarly, a second transition section D2 can also be provided on the side of the second guide fluid 314 facing the connector 20, with the same effect as the first transition section D1, and will not be elaborated further here.

[0074] In some embodiments, please refer to Figure 5 and Figure 6 The flow guiding structure 31 includes a first flow guide 313 and a second flow guide 314 separately arranged along the second direction Y. A first channel T2 is formed inside the first flow guide 313 along the second direction Y, and a second channel T3 is formed inside the second flow guide 314 along the second direction Y. The first channel T2 and the second channel T3 are joined together along the second direction Y to form a flow guiding channel T1. Optionally, the first flow guide 313 is located between the second flow guide 314 and the vapor deposition source 10. The vapor deposition hole 12 is located inside the first channel T2, and the inner diameter of the first channel T2 gradually increases along the direction from the vapor deposition source 10 to the connector 20. Optionally, the second flow guide 314 is located between the first flow guide 313 and the connector 20. The diameter of the second channel T3 facing the first channel T2 is not less than the diameter of the first channel T2 facing the second channel T3, and the diameter of the second channel T3 away from the first channel T2 is not less than the diameter of the second channel T3 facing the first channel T2. Optionally, the side of the second channel T3 facing the connector 20 includes a transition channel T4, the diameter of which is uniform throughout the ring in the second direction Y. Optionally, the outer diameter of the first fluid guide 313 and the second fluid guide 314 in the second direction Y is equal.

[0075] Regarding the configuration of the flow guiding structure 31, the flow guiding structure 31 may further include a first flow guiding fluid 313 and a second flow guiding fluid 314 separately arranged along the second direction Y. The first flow guiding fluid 313 has a first channel T2 extending through it along the second direction Y, and the second flow guiding fluid 314 has a second channel T3 extending through it along the second direction Y. The first channel T2 and the second channel T3 are joined together along the second direction Y to form a flow guiding channel T1. That is to say, the flow guiding channel T1 has two solid sidewalls in the second direction Y, one part of which is formed by the first flow guiding fluid 313 and the other part is formed by the second flow guiding fluid 314.

[0076] Similarly, the inner diameter of the flow channel T1 gradually increases along the side of the vapor deposition source 10 pointing towards the connector 20. Specifically, the first flow guide 313 is located between the second flow guide 314 and the vapor deposition source 10, the vapor deposition hole 12 is located inside the first channel T2, the inner diameter of the first channel T2 gradually increases along the direction from the vapor deposition source 10 towards the connector 20, the second flow guide 314 is located between the first flow guide 313 and the connector 20, the diameter of the second channel T3 facing the first channel T2 is not less than the diameter of the first channel T2 facing the second channel T3, and the diameter of the second channel T3 away from the first channel T2 is not less than the diameter of the second channel T3 facing the first channel T2, so that the vapor deposition gas can pass smoothly through the flow channel T1.

[0077] When the vapor deposition gas flows inside the guide channel T1, its flow direction is limited by the extension direction of the sidewall of the guide channel T1. In order to enable the vapor deposition gas to perform good vapor deposition with the workpiece to be vapor deposited, the side of the second channel T3 facing the connector 20 includes a transition channel T4. The diameter of the transition channel T4 in the second direction Y is the same everywhere. That is to say, when the vapor deposition gas flows inside the transition channel T4, its flow direction can be along the second direction Y towards the workpiece to be vapor deposited, so that the vapor deposition gas can have a certain inertia to flow towards the workpiece to be vapor deposited when it flows out of the guide channel T1, thus ensuring the vapor deposition effect on the workpiece to be vapor deposited.

[0078] When the first guide fluid 313 and the second guide fluid 314 are separately arranged along the second direction Y, in order to ensure the connection stability between the first guide fluid 313 and the second guide fluid 314, the outer diameter of the first guide fluid 313 and the second guide fluid 314 along the second direction Y is set to be equal, so that the first guide fluid 313 can form a stable support for the second guide fluid 314, thereby ensuring the stability of the guide structure 31 and ensuring the smooth flow of the guide channel T1.

[0079] In some embodiments, please refer to Figure 7 and Figure 8 The flow guiding assembly 30 includes a flow guiding structure 31, which corresponds to the vapor deposition holes 12 of multiple vapor deposition sources 10. Multiple flow guiding channels T1 are formed on the flow guiding structure 31 along the second direction Y. The projections of the multiple vapor deposition holes 12 in the second direction Y are located inside the projections of the flow guiding structure 31 in the second direction Y. Optionally, in the second direction Y, the distance between the flow guiding structure 31 and the vapor deposition source 10 is less than the distance between the flow guiding structure 31 and the connector 20. Optionally, a flow guide 32 protrudes from the side of the flow guiding structure 31 facing the vapor deposition source 10. The flow guide 32 is arranged circumferentially in the second direction Y and forms an annular space 321. The projections of the multiple vapor deposition holes 12 in the second direction Y are located inside the annular space 321. Optionally, the flow guide 32 is inclined, and the diameter of the opening of the annular space 321 facing the vapor deposition source 10 is larger than the diameter of the opening of the annular space 321 away from the vapor deposition source 10.

[0080] The flow guiding assembly 30 includes a flow guiding structure 31, which corresponds to multiple vapor deposition holes 12 on multiple vapor deposition sources 10. The flow guiding structure 31 forms multiple flow guiding channels T1 along the second direction Y. The projections of the multiple vapor deposition holes 12 in the second direction Y are all located inside the projection of the flow guiding structure 31 in the second direction Y. When vapor deposition gas is ejected from the vapor deposition holes 12 in the multiple vapor deposition sources 10, it corresponds to one flow guiding structure 31. Under the restriction of the flow guiding structure 31, the vapor deposition gas can only flow through the multiple flow guiding channels T1 and then flow to the part to be vapor-deposited.

[0081] In practice, the temperature of the vapor deposition gas is highest when it is ejected from the vapor deposition hole 12. When it comes into contact with the workpiece to be vapor deposition, the temperature decreases and a film is deposited on the workpiece. To improve the confinement and diversion effect of the flow guiding structure 31 on the vapor deposition gas, the flow guiding structure 31 is set on the side close to the vapor deposition source 10. That is, when the vapor deposition gas is ejected from the vapor deposition source 10, it is confined and diverted by the flow guiding structure 31 at its relatively high temperature stage, so that the vapor deposition gas still has a high temperature when passing through the flow guiding structure 31, reducing the probability of vapor deposition gas depositing on the flow guiding structure 31.

[0082] Furthermore, a guide element 32 can be provided on the side of the flow guiding structure 31 facing the vapor deposition source 10. The guide element 32 is arranged in the second direction Y and forms an annular space 321. The projections of the multiple vapor deposition holes 12 in the second direction Y are located inside the annular space 321. When the vapor deposition gas is ejected from the vapor deposition holes 12, its direction is uncertain. Due to the arrangement of the annular space 321, the vapor deposition gas can be guided by the guide element 32 to flow into the flow guiding structure 31, thereby passing through the flow guiding channel T1. In order to improve the flow guiding effect of the guide element 32, the guide element 32 can be inclined, and the opening of the annular space 321 facing the vapor deposition source 10 is larger than the opening of the annular space 321 away from the vapor deposition source 10, so that the opening of the annular space 321 facing the vapor deposition source 10 can cover more vapor deposition gas, thereby guiding more vapor deposition gas.

[0083] In some embodiments, please refer to Figure 9 and Figure 10 The vapor deposition apparatus further includes a temperature regulating component 50, which is connected to the flow guiding component 30 and configured to regulate the temperature of the flow guiding component 30. Optionally, the temperature regulating component 50 includes a first regulating member 51 and a second regulating member 52 spaced apart along a second direction Y, and the first regulating member 51 and the second regulating member 52 are independently adjustable. Optionally, the first regulating member 51 is located along the second direction Y between the second regulating member 52 and the connecting member 20. The first regulating member 51 includes a first temperature and a second temperature. During the vapor deposition stage, the first regulating member 51 is at the first temperature, and during the removal stage, the first regulating member 51 is at the second temperature. The first temperature is lower than the melting point of the vapor deposition material, and the second temperature is higher than the melting point of the vapor deposition material.

[0084] When the flow guiding component 30 guides and restricts the vapor deposition gas, the vapor deposition gas will inevitably deposit on the flow guiding component 30. In order to remove the vapor deposition material deposited on the flow guiding component 30, in this embodiment of the application, the vapor deposition apparatus further includes a temperature regulating component 50. The temperature regulating component 50 is connected to the flow guiding component 30 and can regulate the temperature of the flow guiding component 30. When the vapor deposition gas deposits on the flow guiding component 30, the temperature regulating component 50 can increase the temperature of the flow guiding component 30 so that the deposited vapor deposition material melts and is removed from the flow guiding component 30.

[0085] When the vapor deposition gas flows along the guide channel T1, its temperature difference is large in the second direction Y. Based on the guide structure 31 located between the vapor deposition source 10 and the connector 20 in the second direction Y, the temperature adjustment component 50 includes a first adjustment component 51 and a second adjustment component 52 distributed at intervals along the second direction Y. The adjustment temperature of the first adjustment component 51 and the second adjustment component 52 can be adjusted independently.

[0086] The first adjusting member 51 is located between the second adjusting member 52 and the connecting member 20 along the second direction Y, meaning the first adjusting member 51 is closer to the part to be vapor-deposited. During the vapor deposition stage, to avoid affecting the vapor-deposited material that has already formed a film, the temperature of the first adjusting member 51 is adjusted to a first temperature, which is lower than the melting point of the vapor-deposited material, to reduce the impact of the temperature of the first adjusting member 51 on the vapor-deposited material that has already formed a film. When it is necessary to remove the vapor-deposited material deposited on the flow guiding component 30, the first adjusting member 51 is adjusted to a second temperature, which is higher than the melting point of the vapor-deposited material. The vapor-deposited material on the flow guiding component 30 melts and flows relative to the flow guiding component 30, thereby removing the vapor-deposited material deposited on the flow guiding component 30. Correspondingly, since the second adjusting member 52 is farther away from the part to be vapor-deposited relative to the first adjusting member 51, its temperature can be set to only one temperature to ensure the smooth passage of the vapor-deposited gas. This temperature can be higher than the melting point of the vapor-deposited material.

[0087] In some embodiments, please refer to Figure 9 and Figure 10The vapor deposition apparatus further includes a collection structure 60, which includes a collection cavity 61. The collection structure 60 is located between the flow guiding component 30 and the vapor deposition source 10 along the second direction Y. The projection of the flow guiding component 30 in the second direction Y and the projection of the collection cavity 61 in the second direction Y at least partially overlap. Optionally, the vapor deposition apparatus further includes a vapor deposition chamber 40, which forms a cavity structure Q1 inside. The vapor deposition source 10, the connector 20, and the flow guiding structure 31 are all located inside the cavity structure Q1. A partition 43 is provided inside the vapor deposition chamber 40, which divides the cavity structure Q1 into a first cavity Q11 and a second cavity Q12. The portion of the vapor deposition source 10 that surrounds the vapor deposition cavity 11 is located in the second cavity Q12, at least a portion of the vapor deposition hole 12 is located in the first cavity Q11, the connector 20 and the flow guiding structure 31 are located in the first cavity Q11, and the collection cavity 61 is located inside the partition 43. Optionally, the flow guiding structure 31 includes a first flow guiding member 311, with a first channel T2 formed inside the first flow guiding member 311. The first flow guiding member 311 is connected to the separator 43, and the projection of the inner wall of the first flow guiding member 311 in the second direction Y is located inside the collection cavity 61. Optionally, the flow guiding structure 31 includes a second flow guiding member 312, with a second channel T3 formed inside the second flow guiding member 312. The second flow guiding member 312 is located inside the first channel T2, with one end of the second flow guiding member 312 facing the connector 20 located on the side of the first flow guiding member 311 facing the connector 20 away from the connector 20. The inner sidewall of the first flow guiding member 311 is provided with a protruding arcuate protrusion 3111, and the projection of the arcuate protrusion 3111 in the first direction X overlaps with that of the second flow guiding member 312.

[0088] After the temperature of the flow guiding component 30 is increased, the vapor deposition material deposited on the flow guiding component 30 is melted by the heat. However, this part of the vapor deposition material can be reused. Therefore, the vapor deposition apparatus in this embodiment of the application also includes a collection structure 60, which is used to collect the vapor deposition material deposited on the flow guiding component 30.

[0089] Specifically, the collection structure 60 includes a collection cavity 61, which is located between the flow guiding component 30 and the vapor deposition source 10 along the second direction Y. When the vapor deposition material on the flow guiding component 30 is heated and melts, it flows directly into the collection cavity 61 for collection. Regarding the structural configuration of the collection cavity 61, the vapor deposition box 40 forms a cavity structure Q1 inside. The vapor deposition source 10, the connector 20, and the flow guiding structure 31 are all located inside the cavity structure Q1. A partition 43 is provided inside the vapor deposition box 40, dividing the cavity structure Q1 into a first cavity Q11 and a second cavity Q12. The portion of the vapor deposition source 10 that surrounds the vapor deposition cavity 11 is located in the second cavity Q12, at least a portion of the vapor deposition hole 12 is located in the first cavity Q11, the connector 20 and the flow guiding structure 31 are located in the first cavity Q11, and the collection cavity 61 is located inside the partition 43.

[0090] The flow guiding structure 31 includes a first flow guiding element 311, which forms a first channel T2. Evaporation gas flows within the first channel T2. The projection of the inner wall of the first flow guiding element 311 in the second direction Y is located inside the collection chamber 61. When the evaporation material flows within the first channel T2, it may deposit on the sidewall of the first channel T2. As the temperature of the first flow guiding element 311 rises, the evaporation material deposited on the first flow guiding element 311 melts and flows directly into the collection chamber 61 along the inner wall of the first flow guiding element 311, thus completing the collection of the evaporation material on the first flow guiding element 311.

[0091] Furthermore, the flow guiding structure 31 may also include a second flow guiding element 312, with a second channel T3 formed inside the second flow guiding element 312. The vapor deposition gas flows inside the second channel T3. When the vapor deposition gas is ejected from the vapor deposition hole 12 on the vapor deposition circle, it first enters the second channel T3, and then enters the first channel T2 after passing through the second channel T3. The vapor deposition material may be deposited on the first flow guiding element 311 or the second flow guiding element 312; however, the vapor deposition material deposited on the first flow guiding element 311 is located at the end of the first flow guiding element 311 furthest from the vapor deposition source 10. To improve the collection efficiency of the vapor deposition material on the first flow guiding element 311, an arcuate protrusion 3111 is provided protruding from the inner wall of the first flow guiding element 311. The projection of this arcuate protrusion 3111 in the first direction X overlaps with that of the second flow guiding element 312. After the vapor-deposited material on the first guide member 311 melts upon heating, it flows downward along the inner wall of the first guide member 311. When flowing through the arc-shaped protrusion 3111, the vapor-deposited material, under its own gravity, flows along the arc-shaped protrusion 3111 towards the side closer to the second guide member 312. However, under its own gravity, the vapor-deposited material cannot flow further along the inner wall of the first guide member 311 away from the second guide member 312 after passing through the arc-shaped protrusion 3111. In other words, when the vapor-deposited material flows through the arc-shaped protrusion 3111, it can directly detach from the first guide member 311 at the arc-shaped protrusion 3111, thus completing the collection of the vapor-deposited material.

[0092] In some embodiments, please refer to Figure 9 and Figure 10The vapor deposition source 10 and the flow guiding assembly 30 are both movably disposed relative to the connecting member 20. Optionally, the vapor deposition apparatus further includes a vapor deposition chamber 40, inside which support members 44 and partition members 43 are arranged at intervals along the second direction Y and are connected to each other. The vapor deposition source 10 is connected to the support member 44 and located between the support member 44 and the partition member 43. The flow guiding assembly 30 is connected to the side of the partition member 43 opposite to the support member 44. The support member 44 is movably disposed relative to the connecting member 20. Optionally, the vapor deposition chamber 40 includes a first wall 41 and a second wall 42 arranged at intervals along the second direction Y, and the support member 44 is slidably connected to the second wall 42. Optionally, the vapor deposition chamber 40 includes a first wall 41 and a second wall 42 arranged at intervals along the second direction Y, and the support member 44 is slidably connected to the second wall 42 along a straight trajectory. Optionally, the vapor deposition chamber 40 includes a first wall 41 and a second wall 42 arranged at intervals along the second direction Y, and the support member 44 is slidably connected to the second wall 42 along an arc trajectory.

[0093] To ensure that the vapor deposition source 10 can form a complete and uniform film layer on the workpiece to be vaporized, the vapor deposition source 10 and the flow guiding component 30 are movable relative to the connector 20. During the vapor deposition process, the connector 20 is fixed in position, while the vapor deposition source 10 and the flow guiding component 30 can be displaced to a certain extent according to the vapor deposition situation to fully cover the workpiece to be vaporized on the connector 20.

[0094] In this embodiment of the application, the vapor deposition apparatus includes a vapor deposition chamber 40, in which a support member 44 and a partition member 43 are arranged at intervals along the second direction Y. The vapor deposition source 10 is connected to the support member 44 and located between the support member 44 and the partition member 43. The partition member 30 is connected to the side of the partition member 43 away from the support member 44. The support member 44 is movable relative to the connector 20. Since both the vapor deposition source 10 and the partition member 30 are connected to the support member 44, during the movement of the support member 44 relative to the connector 20, the vapor deposition source 10 and the partition member 30 can move together relative to the connector 20, so that the vapor deposition member can perform comprehensive vapor deposition on the workpiece to be vapor deposited on the connector 20.

[0095] Specifically, the vapor deposition chamber 40 includes a first wall 41 and a second wall 42 spaced apart in the second direction Y. The support member 44 is slidably connected to the second wall 42 to ensure the stability of the support member 44 sliding inside the vapor deposition chamber 40. The support member 44 can be slidably connected to the second wall 42 along a straight line or along a circular arc, as long as the vapor deposition source 10 completely covers the workpiece to be vapor-deposited on the connector 20 during the sliding process of the support member 44.

[0096] Secondly, please refer to Figure 11This application provides a vapor deposition method based on the vapor deposition apparatus of the first aspect of this application. The flow guiding component 30 includes multiple sets of flow guiding structures 31, each corresponding to a vapor deposition source 10. Each flow guiding structure 31 includes a first flow guiding element 311, with a first channel T2 formed through the interior of the first flow guiding element 311 along a first direction X. The flow guiding structure 31 also includes a second flow guiding element 312, with a second channel T3 formed through the interior of the second flow guiding element 312 along the first direction X. Vapor deposition holes 12 are located inside the second channel T3. One end of the second flow guiding element 312 facing the connector 20 is located on the side of the first flow guiding element 311 facing the connector 20 away from the connector 20. The positions of both the second flow guiding element 312 and the first flow guiding element 311 are adjustable along the first direction X. This vapor deposition method includes:

[0097] S10. Adjust the position of the second flow guide 312 relative to the vapor deposition hole 12. Based on the relative position of the vapor deposition source 10 relative to the connector 20, determine the distance between the second flow guide 312 and the vapor deposition hole 12 along the first direction X.

[0098] S20. Adjust the position of the first guide member 311 relative to the second guide member 312. Based on the distance between adjacent vapor deposition sources 10 and the ejection angle of the vapor deposition hole 12, determine the inclination angle of the line connecting the end of the first guide member 311 facing the connector 20 and the end of the second guide member 312 facing the connector 20, so as to determine the distance between the first guide member 311 and the second guide member 312 along the first direction X.

[0099] As the vapor deposition process proceeds, the position of the flow guiding component 30 relative to the vapor deposition hole 12 needs to be adjusted. During the adjustment process, since the second flow guiding component 312 is located inside the first flow guiding component 311, the position of the second flow guiding component 312 relative to the vapor deposition hole 12 is adjusted first. When the position of the vapor deposition source 10 relative to the connector 20 is different, the distance between the second flow guiding component 312 and the vapor deposition hole 12 is also different. For example, when the vapor deposition source 10 is located at the center of the connector 20, the second flow guiding component 312 can be set with the vapor deposition hole 12 as the center; when the vapor deposition source 10 is at the edge of the connector 20, the distance between the side of the second flow guiding component 312 facing the edge of the connector 20 and the vapor deposition hole 12 is smaller than the distance between the side of the second flow guiding component 312 away from the edge of the connector 20 and the vapor deposition hole 12.

[0100] After adjusting the position of the second flow guide 312 relative to the vapor deposition hole 12, the position of the first flow guide 311 relative to the second flow guide 312 is adjusted. When adjusting the position of the first flow guide 311, the inclination angle of the line connecting the end of the first flow guide 311 facing the connector 20 and the end of the second flow guide 312 facing the connector 20 is determined based on the distance between adjacent vapor deposition sources 10 and the ejection angle of the vapor deposition hole 12. This determines the distance between the first flow guide 311 and the second flow guide 312 along the first direction X. For example, the greater the distance between adjacent vapor deposition sources 10 and the greater the ejection angle of the vapor deposition hole 12, the greater the inclination angle of the line connecting the end of the first flow guide 311 facing the connector 20 and the end of the second flow guide 312 facing the connector 20, and the greater the distance between the first flow guide 311 and the second flow guide 312 along the first direction X.

[0101] Although the invention has been described with reference to preferred embodiments, various modifications can be made and components can be replaced with equivalents without departing from the scope of the invention. In particular, the technical features mentioned in the various embodiments can be combined in any manner as long as there is no structural conflict. The invention is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A vapor deposition apparatus, characterized in that, include: A vapor deposition source includes a vapor deposition cavity for placing vapor deposition material and a vapor deposition hole communicating with the vapor deposition cavity. Multiple vapor deposition sources are provided, and the multiple vapor deposition sources are spaced apart along a first direction. A connector is provided opposite to and spaced from the vapor deposition source in a second direction, the connector being configured to connect to the workpiece to be vapor-deposited, the second direction intersecting the first direction; A flow guiding component is located between the vapor deposition source and the connector along the second direction, and the projections of the vapor deposition holes of the plurality of vapor deposition sources in the second direction are all located inside the projection of the flow guiding component in the second direction; The flow guiding component includes a flow guiding channel that extends through the second direction. The flow guiding channel includes a first part and a second part that are interconnected along the second direction. The first part is located on the side of the second part closer to the vapor deposition source. The size of the first part in the first direction is smaller than the size of the second part in the first direction.

2. The vapor deposition apparatus according to claim 1, characterized in that, The flow guiding component includes multiple sets of flow guiding structures, each flow guiding structure being configured in a one-to-one correspondence with the vapor deposition source. The flow guiding structure forms the flow guiding channel along the second direction, and the projection of the vapor deposition hole in the second direction is located inside the projection of the flow guiding channel in the second direction. Preferably, the flow guiding structure includes a first flow guiding member, the first flow guiding member having a first channel formed through it along the second direction, and at least a portion of the vapor deposition hole being located inside the first channel; Preferably, the distance between the end of the first guide member facing the connector and the connector in the second direction is D1, where 400mm≤D1≤800mm; Preferably, the flow guiding structure further includes a second flow guiding member, the second flow guiding member having a second channel formed through it along the second direction, the second flow guiding member being located inside the first channel, the vapor deposition hole being located inside the second channel, and the end of the second flow guiding member facing the connector being located on the side of the end of the first flow guiding member facing the connector that is away from the connector; Preferably, the second guide member and the first guide member are spaced apart along the first direction; Preferably, the interval between the second guide member and the first guide member along the first direction is adjustable; Preferably, the first guide member is slidably disposed relative to the first guide member along the second direction; Preferably, the first flow guides in adjacent flow guide structures are arranged in contact with each other.

3. The vapor deposition apparatus according to claim 2, characterized in that, The vapor deposition apparatus further includes a vapor deposition chamber, the vapor deposition chamber having an internal cavity structure. The vapor deposition chamber includes a first wall and a second wall spaced apart in the second direction, and a partition between the first wall and the second wall. The partition divides the cavity structure along the second direction into a first cavity facing the first wall and a second cavity facing the second wall. The portion of the vapor deposition source surrounding the vapor deposition cavity is located in the second cavity, at least a portion of the vapor deposition hole is located in the first cavity, and the connecting member is located in the first cavity. Preferably, the flow guiding structure is connected to the separator, and the flow guiding structure is located in the first cavity; Preferably, the flow guiding structure is slidably disposed relative to the separator along the first direction to adjust the relative position between the vapor deposition hole and the sidewall of the flow guiding channel; Preferably, the flow guiding structure includes a first flow guiding member and a second flow guiding member, wherein a first channel is formed inside the first flow guiding member, a second channel is formed inside the second flow guiding member, the second flow guiding member is located inside the first channel, the first flow guiding member is slidably connected to the separator along the first direction, and the second flow guiding member is slidably connected to the separator along the first direction.

4. The vapor deposition apparatus according to claim 2, characterized in that, The flow guiding structure includes a first flow guide and a second flow guide that are separately arranged along a first direction, and the first flow guide and the second flow guide form the flow guiding channel. Preferably, the inner diameter of the flow channel gradually increases along the side of the vapor deposition source pointing towards the connector; Preferably, the distance between the end of the first fluid guide facing the connector and the connector in the second direction is D2, 400mm≤D2≤800mm, and the distance between the end of the second fluid guide facing the connector and the connector in the second direction is D3, 400mm≤D3≤800mm. Preferably, the vapor deposition apparatus further includes a vapor deposition chamber, the vapor deposition chamber having an internal cavity structure, the vapor deposition source, the connector, and the flow guiding structure all located inside the cavity structure, a partition is provided inside the vapor deposition chamber, the partition is located between the vapor deposition source and the flow guiding structure along the second direction, the first flow guide and the second flow guide are both connected to the partition, the tilt angle of the first flow guide relative to the partition is adjustable, and the tilt angle of the second flow guide relative to the partition is adjustable; Preferably, there is a gap between the first guide fluid and the second guide fluid in the second circumferential direction, and the flow guiding structure further includes a flexible guide fluid connected between the first guide fluid and the second guide fluid in the second circumferential direction, wherein the first guide fluid, the flexible guide fluid, and the second guide fluid enclose and form the flow guiding channel; Preferably, the side of the first fluid guide facing the connector includes a first transition section, the diameter of which is equal everywhere in the second direction; the side of the second fluid guide facing the connector includes a second transition section, the diameter of which is equal everywhere in the second direction.

5. The vapor deposition apparatus according to claim 2, characterized in that, The flow guiding structure includes a first flow guide and a second flow guide that are separately arranged along the second direction. The first flow guide has a first channel that runs through it along the second direction, and the second flow guide has a second channel that runs through it along the second direction. The first channel and the second channel are spliced ​​together along the second direction to form the flow guiding channel. Preferably, the first guide fluid is located between the second guide fluid and the vapor deposition source, the vapor deposition hole is located inside the first channel, and the inner diameter of the first channel gradually increases along the direction from the vapor deposition source to the connector; Preferably, the second guide fluid is located between the first guide fluid and the connector, the diameter of the second channel facing the first channel is not less than the diameter of the first channel facing the second channel, and the diameter of the second channel away from the first channel is not less than the diameter of the second channel facing the first channel. Preferably, the side of the second channel facing the connector includes a transition channel, the diameter of which is equal everywhere in the second direction; Preferably, the outer diameter of the first fluid guide ring and the second fluid guide ring in the second direction are equal.

6. The vapor deposition apparatus according to claim 1, characterized in that, The flow guiding component includes a flow guiding structure, which simultaneously corresponds to the evaporation holes of the plurality of evaporation sources. A plurality of flow guiding channels are formed on the flow guiding structure along the second direction, and the projection of the plurality of evaporation holes in the second direction is located inside the projection of the flow guiding structure in the second direction. Preferably, in the second direction, the distance between the flow guiding structure and the vapor deposition source is less than the distance between the flow guiding structure and the connector; Preferably, the flow guiding structure has a flow guide protruding from one side toward the vapor deposition source, the flow guide is arranged in a ring in the second direction and forms an annular space, and the projection of the plurality of vapor deposition holes in the second direction is located inside the annular space; Preferably, the guide element is inclined, and the diameter of the opening on the side of the annular space facing the vapor deposition source is larger than the diameter of the opening on the side of the annular space away from the vapor deposition source.

7. The vapor deposition apparatus according to claim 1, characterized in that, The vapor deposition apparatus further includes a temperature regulating component connected to the flow guiding component, and the temperature regulating component is configured to regulate the temperature of the flow guiding component; Preferably, the temperature regulating assembly includes a first regulating member and a second regulating member that are spaced apart along a second direction, and the first regulating member and the second regulating member are independently adjustable; Preferably, the first adjusting member is located between the second adjusting member and the connecting member along the second direction. The first adjusting member includes a first temperature and a second temperature. During the vapor deposition stage, the first adjusting member is at the first temperature, and during the removal stage, the first adjusting member is at the second temperature. The first temperature is lower than the melting point of the vapor deposition material, and the second temperature is higher than the melting point of the vapor deposition material.

8. The vapor deposition apparatus according to claim 7, characterized in that, The vapor deposition apparatus further includes a collection structure, which includes a collection cavity. The collection structure is located between the flow guiding component and the vapor deposition source along the second direction, and the projection of the flow guiding component in the second direction and the projection of the collection cavity in the second direction at least partially overlap. Preferably, the vapor deposition apparatus further includes a vapor deposition chamber, the vapor deposition chamber having an internal cavity structure, the vapor deposition source, the connector, and the flow guiding structure all located inside the cavity structure, the vapor deposition chamber having a partition that divides the cavity structure into a first cavity and a second cavity, the portion of the vapor deposition source surrounding the vapor deposition cavity being located in the second cavity, at least a portion of the vapor deposition hole being located in the first cavity, the connector and the flow guiding structure being located in the first cavity, and the collection cavity being located inside the partition; Preferably, the flow guiding structure includes a first flow guiding member, a first channel is formed inside the first flow guiding member, the first flow guiding member is connected to the separator, and the projection of the inner wall of the first flow guiding member in the second direction is located inside the collection cavity; Preferably, the flow guiding structure includes a second flow guiding member, the second flow guiding member having a second channel formed inside it, the second flow guiding member being located inside the first channel, one end of the second flow guiding member facing the connector being located on the side of the first flow guiding member facing the connector away from the connector, and the inner sidewall of the first flow guiding member having a protruding arcuate protrusion, the projection of the arcuate protrusion in the first direction overlapping with the second flow guiding member.

9. The vapor deposition apparatus according to claim 1, characterized in that, Both the vapor deposition source and the flow guiding component are movable relative to the connector. Preferably, the vapor deposition apparatus further includes a vapor deposition chamber, inside which support members and partition members are arranged at intervals along the second direction and are connected to each other. The vapor deposition source is connected to the support member and located between the support member and the partition member. The flow guiding component is connected to the side of the partition member away from the support member. The support member is movable relative to the connecting member. Preferably, the vapor deposition chamber includes a first wall and a second wall spaced apart in the second direction, and the support member is slidably connected to the second wall; Preferably, the vapor deposition chamber includes a first wall and a second wall spaced apart in the second direction, and the support member is slidably connected to the second wall along a straight trajectory; Preferably, the vapor deposition chamber includes a first wall and a second wall spaced apart in the second direction, and the support member is slidably connected to the second wall along an arc trajectory.

10. A vapor deposition method, characterized in that, Based on the vapor deposition apparatus according to any one of claims 1-9, the flow guiding component includes multiple sets of flow guiding structures, each flow guiding structure being configured in a one-to-one correspondence with the vapor deposition source. Each flow guiding structure includes a first flow guiding member, the first flow guiding member having a first channel formed through it along the first direction. The flow guiding structure also includes a second flow guiding member, the second flow guiding member having a second channel formed through it along the first direction. The vapor deposition hole is located inside the second channel. One end of the second flow guiding member facing the connector is located on the side of the first flow guiding member facing the connector that is away from the connector. The positions of the second flow guiding member and the first flow guiding member are both adjustable along the first direction. The vapor deposition method includes: Adjust the position of the second flow guide relative to the vapor deposition hole, and determine the distance between the second flow guide and the vapor deposition hole along the first direction based on the relative position of the vapor deposition source relative to the connector; Adjust the position of the first guide relative to the second guide, and determine the inclination angle of the line connecting the end of the first guide toward the connector and the end of the second guide toward the connector based on the distance between adjacent vapor deposition sources and the ejection angle of the vapor deposition hole, so as to determine the spacing between the first guide and the second guide along the first direction.

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