Probe structure for an evaporation device and method of use thereof

Abstract

This invention discloses a probe structure for a vapor deposition apparatus and its usage method, belonging to the field of display technology. The probe structure for the vapor deposition apparatus includes a vapor deposition source, and the probe structure includes a body, a crystal oscillator probe, an outer cover, and a detection component. The crystal oscillator probe is disposed on the body and includes a crystal oscillator assembly comprising multiple crystal oscillators. The outer cover is disposed on the body and covers the crystal oscillator assembly. The outer cover has a first opening and a second opening, both facing the vapor deposition source. The second opening can be selectively blocked or exposed. The crystal oscillator probe and the outer cover can move relative to each other, allowing multiple crystal oscillators to be exposed sequentially through the first opening. When one crystal oscillator is exposed through the first opening, another crystal oscillator can be exposed through the second opening, while other crystal oscillators are blocked by the outer cover. The detection component is used to detect the crystal frequency of the crystal oscillator exposed through the first opening, avoiding production disruptions and reducing downtime.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a probe structure for a vapor deposition apparatus and its method of use. Background Technology

[0002] Currently, in the evaporation production process of OLED (Organic Light-Emitting Diode), the evaporation equipment includes an evaporation source and a probe structure. The probe structure is used to monitor the evaporation rate of the evaporation source, thereby monitoring the thickness of the evaporated film.

[0003] like Figure 1 and Figure 2 As shown, the probe structure 100 is equipped with 10 crystal oscillators 110. The outer casing 200 has a small hole 210. The crystal oscillator 110 currently in use is exposed through the small hole 210. Other unused crystal oscillators 110 are inside the outer casing 200 and cannot be seen visually; therefore, vapor deposition material cannot be deposited onto the surface of the unused crystal oscillators 110. When the currently used crystal oscillator 110 reaches its set lifespan or loses its activity, the next crystal oscillator 110 is aligned with the small hole 210 and exposed, and so on. All 10 crystal oscillators 110 are sequentially exposed through the small holes 210 to achieve the corresponding monitoring function.

[0004] Yb and Ag / Mg materials are used as cathode layers in OLED device structures. Mg / Yb itself has a relatively low evaporation rate and is highly reactive, resulting in poor adhesion to the crystal oscillator 110 used to monitor the evaporation rate. Therefore, Mg / Yb materials undergo a pre-coating process before evaporation, i.e., a thin film is deposited on the crystal oscillator 110 in advance to improve the adhesion of the Mg / Yb evaporation material.

[0005] In the existing probe structure 100, 10 crystal oscillators 110 undergo a unified pre-plating process before being installed inside the outer casing 200. After the initial crystal oscillators 110 complete their plating, subsequent crystal oscillators 110 remain unplated with Mg / Yb material for an extended period, thus prolonging the Mg / Yb rate recovery time. Currently, during production line operation, the Mg / Yb switching crystal rate recovery time is approximately 20 minutes. During this period, substrate plating cannot occur, severely impacting production and increasing downtime.

[0006] Therefore, there is an urgent need for a probe structure for vapor deposition equipment and its usage method to solve the above-mentioned problems. Summary of the Invention

[0007] The purpose of this invention is to provide a probe structure for a vapor deposition apparatus and its usage method, so as to avoid affecting production and reduce downtime.

[0008] To achieve this objective, the present invention adopts the following technical solution:

[0009] A probe structure for a vapor deposition apparatus, the vapor deposition apparatus including a vapor deposition source, the probe structure comprising:

[0010] ontology;

[0011] A crystal oscillator probe is disposed on the body, and the crystal oscillator probe includes a crystal chip assembly, which includes multiple crystal chips;

[0012] An outer cover is disposed on the main body and covers the crystal oscillator assembly. The outer cover has a first opening and a second opening, both of which face the vapor deposition source. The second opening can be selectively blocked or exposed. The crystal oscillator probe and the outer cover can move relative to each other, allowing multiple crystal oscillators to be exposed sequentially through the first opening. When one crystal oscillator is exposed through the first opening, another crystal oscillator can be exposed through the second opening, while the other crystal oscillators are blocked by the outer cover.

[0013] A detection component is used to detect the crystal frequency of the crystal oscillator exposed in the first opening.

[0014] In some possible implementations, the probe structure further includes a shielding mechanism, which includes a shielding member capable of shielding or exposing the second opening.

[0015] In some possible implementations, the shielding mechanism further includes a drive unit disposed on the body, the drive unit being capable of driving the shielding member to move in order to shield or expose the second opening.

[0016] In some possible implementations, a monitoring component is also included, wherein the crystal oscillator probe, the drive unit, and the detection component are all communicatively connected to the monitoring component.

[0017] In some possible implementations, the shielding mechanism further includes a rotating shaft, the shielding member being connected to the outer cover via the rotating shaft and the shielding member being located outside the outer cover, the rotating shaft being rotatable about a centerline perpendicular to the plane containing the crystal oscillator assembly.

[0018] In some possible implementations, the plurality of crystal oscillators are arranged in a ring, and the axis of the rotating shaft coincides with the center line of the ring in which the plurality of crystal oscillators are located.

[0019] In some possible implementations, the shielding member includes a connecting part and a shielding part, the connecting part is connected to the rotating shaft, the shielding part is capable of shielding the second opening, the shape of the shielding part and the opening shape of the second opening are adapted to each other, and the cross-sectional area of ​​the shielding part is not less than the opening area of ​​the second opening.

[0020] In some possible implementations, the shielding portion is plate-shaped, and the shielding portion has a protrusion on the side facing the outer cover. The protrusion can extend into the second opening, and the protrusion has a guide surface in its circumference. The cross-sectional area of ​​the protrusion gradually increases from its top to the direction close to the shielding portion.

[0021] A method of using a probe structure for a vapor deposition apparatus as described in any of the preceding claims, wherein the plurality of crystal oscillators in the crystal oscillator assembly includes a first crystal oscillator and a second crystal oscillator, comprising:

[0022] The first crystal oscillator is exposed through the first opening, while the second opening is blocked.

[0023] Based on the result of the detection component detecting the crystal frequency of the first crystal oscillator, it is determined whether the crystal frequency of the first crystal oscillator reaches the first preset value. If yes, the second opening is exposed, thereby exposing the second crystal oscillator.

[0024] The second crystal oscillator is coated by the evaporation source to form a film;

[0025] Based on the result of the detection component detecting the crystal frequency of the first crystal oscillator, it is determined whether the crystal frequency of the first crystal oscillator reaches the second preset value. If yes, the crystal probe and the outer cover move relative to each other, so that the second crystal oscillator is exposed through the first opening; wherein, the first preset value is greater than the second preset value.

[0026] In some possible implementations, the first preset value is 5930000Hz, and / or the second preset value is 5923000Hz.

[0027] The beneficial effects of this invention are:

[0028] This invention provides a probe structure and its usage method for a vapor deposition apparatus. By setting a first opening and a second opening, the crystal oscillator currently in use (such as the first crystal oscillator) is exposed through the first opening for real-time monitoring of the vapor deposition rate. Without affecting the lifespan of the current crystal oscillator, the next crystal oscillator to be used (such as the second crystal oscillator) can be exposed in advance for material vapor deposition, thus achieving pre-deposition. When the lifespan of the currently used crystal oscillator reaches a set value or becomes inactive, it automatically switches to the next crystal oscillator to be used. The next crystal oscillator is exposed by aligning with the first opening to take over monitoring the vapor deposition rate. Because pre-deposition has already been performed, the rate recovery time after switching crystal oscillators is greatly reduced during use. Since two crystal oscillators can be continuously exposed in the first and second openings, the crystal oscillator exposed in the second opening can be used as soon as the lifespan of the previous crystal oscillator reaches the set value or loses its activity, reducing waiting time. This avoids the situation where the surface of the crystal oscillator used later is not coated with Mg / Yb material for a long time, and the Mg / Yb rate recovery time is also extended, thus avoiding production impact and reducing downtime. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of a probe structure in the prior art;

[0030] Figure 2 This is a schematic diagram of an outer cover encasing the probe structure in the prior art;

[0031] Figure 3 This is a schematic diagram of the probe structure without an outer cover provided in a specific embodiment of the present invention;

[0032] Figure 4 This is a schematic diagram of an outer cover covering the probe according to a specific embodiment of the present invention;

[0033] Figure 5 This is a schematic diagram of a shielding member provided in a specific embodiment of the present invention;

[0034] Figure 6 This is a schematic diagram of another shielding component provided in a specific embodiment of the present invention;

[0035] Figure 7 This is a flowchart illustrating the usage method of the probe structure for a vapor deposition apparatus provided in a specific embodiment of the present invention.

[0036] In the picture:

[0037] 100. Probe structure; 110. Crystal oscillator; 200. Outer casing; 210. Small hole;

[0038] 1. Body; 2. Crystal oscillator probe; 21. Crystal oscillator assembly; 211. First crystal oscillator; 212. Second crystal oscillator; 3. Connecting shaft; 4. Outer cover; 41. First opening; 42. Second opening; 5. Shielding mechanism; 51. Rotating shaft; 52. Shielding component; 521. Connecting part; 522. Shielding part; 523. Protrusion. Detailed Implementation

[0039] To make the technical problems solved by the present invention, the technical solutions adopted, and the technical effects achieved clearer, the technical solutions of the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0040] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0041] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0042] Yb and Ag / Mg materials are used as cathode layers in OLED device structures. Mg / Yb itself has a relatively low evaporation rate and is highly reactive, resulting in poor adhesion to the crystal oscillator used to monitor the evaporation rate. Therefore, Mg / Yb materials undergo a pre-coating process before evaporation, i.e., a thin film is deposited on the crystal oscillator in advance to improve the adhesion of the Mg / Yb evaporation material.

[0043] Because multiple crystal oscillators undergo pre-plating before being installed on the probe, after the preceding crystal oscillators have completed their plating, the surface of subsequent crystal oscillators remains unplated with Mg / Yb material for an extended period, thus prolonging the Mg / Yb rate recovery time. Currently, during production line operation, the Mg / Yb switching crystal rate recovery time is approximately 20 minutes. During this period, the substrate cannot be plated, severely impacting production and increasing downtime.

[0044] like Figure 3 and Figure 4 As shown, this embodiment provides a probe structure for a vapor deposition apparatus. The vapor deposition apparatus includes a vapor deposition source, and the probe structure includes a body 1, a crystal oscillator probe 2, an outer cover 4, and a detection component.

[0045] A crystal oscillator probe 2 is disposed on the body 1. The crystal oscillator probe 2 includes a crystal oscillator assembly 21, which includes multiple crystal oscillators. An outer cover 4 is disposed on the body 1 and covers the crystal oscillator assembly 21. The outer cover 4 has a first opening 41 and a second opening 42, both of which face the vapor deposition source. The second opening 42 can be selectively blocked or exposed. The crystal oscillator probe 2 and the outer cover 4 can move relative to each other, allowing multiple crystal oscillators to be exposed sequentially through the first opening 41. When one crystal oscillator is exposed through the first opening 41, another crystal oscillator can be exposed through the second opening 42, while other crystal oscillators are blocked by the outer cover 4. A detection component is used to detect the crystal frequency of the crystal oscillator exposed in the first opening 41.

[0046] For ease of description, by way of example, any three of the multiple crystal oscillators are named as first crystal oscillator 211, second crystal oscillator 212 and third crystal oscillator, respectively.

[0047] In one embodiment, the first crystal oscillator 211, the second crystal oscillator 212, and the third crystal oscillator are arranged continuously. During vapor deposition using the aforementioned vapor deposition apparatus, the crystal probe 2 and the outer cover 4 move relative to each other, exposing the first crystal oscillator 211 to the first opening 41, the second crystal oscillator 212 to the second opening 42, and the third crystal oscillator and the other multiple crystal oscillators are shielded by the outer cover 4. The first crystal oscillator 211 faces the vapor deposition source, and the vapor deposition material is deposited onto the surface of the first crystal oscillator 211. The detection component detects the evaporation rate of the vapor deposition source by detecting the crystal frequency of the first crystal oscillator 211. Meanwhile, during the vapor deposition process, the second opening 42 can be either blocked or exposed as needed. When the second opening 42 is blocked, i.e., the second crystal oscillator 212 is blocked, the vapor deposition material from the vapor deposition source is prevented from being deposited onto the surface of the second crystal oscillator 212, protecting the surface of the second crystal oscillator 212 from material deposition and ensuring its service life. When the second opening 42 is exposed, i.e., the second crystal oscillator 212 is exposed, the vapor deposition material from the vapor deposition source is deposited onto the surface of the second crystal oscillator 212, realizing the pre-deposition operation.

[0048] When the lifespan of the first crystal oscillator 211 reaches a set value or loses its activity, the crystal probe 2 and the outer cover 4 move relative to each other, switching the second crystal oscillator 212 to be exposed through the first opening 41, the third crystal oscillator to be exposed through the second opening 42, and the remaining crystal oscillators to be covered by the outer cover 4. Similarly, the second and third crystal oscillators face the vapor deposition source, and the vapor deposition material is deposited onto the surface of the second crystal oscillator 212. The detection component detects the evaporation rate of the vapor deposition source by detecting the crystal frequency of the second crystal oscillator 212. At the same time, during the vapor deposition process, the second opening 42 can be covered or exposed as needed. When the second opening 42 is covered, the third crystal oscillator is covered, preventing the vapor deposition material from the vapor deposition source from being deposited onto the surface of the third crystal oscillator. When the second opening 42 is exposed, the third crystal oscillator is exposed, and the vapor deposition material from the vapor deposition source is deposited onto the surface of the third crystal oscillator, realizing the pre-deposition operation.

[0049] When the lifespan of the second crystal oscillator 212 reaches a set value or it loses its activity, the crystal probe 2 and the outer cover 4 move relative to each other, switching to the third crystal oscillator being exposed through the first opening 41, the next crystal oscillator being exposed through the second opening 42, and the remaining crystal oscillators being covered by the outer cover 4. This process continues in a similar manner. Multiple crystal oscillators to be used undergo pre-plating through the second opening 42 before being used for monitoring. Afterward, multiple pre-plated crystal oscillators are exposed through the first opening 41 to perform the corresponding monitoring functions. The process is the same as described above, and is repeated cyclically. Further details are omitted here.

[0050] Optionally, multiple crystal oscillators used for the crystal oscillator probe 2 undergo a pre-plating process before being installed on the probe. Therefore, the first crystal oscillator 211 used to detect the evaporation rate of the vapor deposition source can directly face the first opening 41 without passing through the second opening 42, so as to directly detect the evaporation rate of the vapor deposition source. Subsequent crystal oscillators undergo a second pre-plating process. Alternatively, according to experiments, after a certain period of time, the adhesion of the pre-plated crystal oscillators decreases. Therefore, crystal oscillators before this time period do not need to undergo pre-plating, that is, they do not need to pass through the second opening 42 to deposit material onto the surface, so as not to affect the service life. For example, if each crystal oscillator is used to detect the evaporation rate of the vapor deposition source for 5 minutes (for illustrative purposes only), and the adhesion of the pre-plated crystal oscillator decreases after 20 minutes (for illustrative purposes only), then the fifth crystal oscillator needs to undergo a pre-plating process through the second opening 42. If the first crystal oscillator 211 is the fourth crystal oscillator, and the second crystal oscillator 212 is the fifth crystal oscillator, the first crystal oscillator 211 and the three crystal oscillators before it do not need to be pre-plated through the second opening 42. Starting from the fifth crystal oscillator, i.e. the second crystal oscillator 212, all subsequent crystal oscillators need to be pre-plated through the second opening 42.

[0051] By setting a first opening 41 and a second opening 42, the crystal oscillator currently in use (such as the first crystal oscillator 211) is exposed through the first opening 41 for real-time monitoring of the evaporation rate. Without affecting the crystal oscillator's lifespan, the next crystal oscillator to be used (such as the second crystal oscillator 212) can be exposed in advance for material evaporation, thus achieving pre-plating. When the lifespan of the currently used crystal oscillator reaches a set value or loses activity, it automatically switches to the next crystal oscillator to be used. The next crystal oscillator is exposed by aligning with the first opening 41 to take over from the previous crystal oscillator and continue monitoring the evaporation rate. Because pre-plating has already been performed, the rate recovery time after switching crystal oscillators is greatly reduced during use. Since two crystal oscillators can be continuously exposed to the first opening 41 and the second opening 42, the crystal oscillator exposed to the second opening 42 can be used after the lifespan of the previous crystal oscillator reaches the set value or loses its activity, reducing waiting time. This avoids the situation where the surface of the crystal oscillator used later is not coated with Mg / Yb material for a long time, and the Mg / Yb rate recovery time is also extended, thus avoiding production impact and reducing downtime.

[0052] In another embodiment, the first crystal oscillator 211, the second crystal oscillator 212, and the third crystal oscillator are spaced apart. For example, one or more crystal oscillators may be spaced apart between the first crystal oscillator 211 and the second crystal oscillator 212, and one or more crystal oscillators may be spaced apart between the second crystal oscillator 212 and the third crystal oscillator, depending on the requirements. For instance, each of the first crystal oscillator 211, the second crystal oscillator 212, and the third crystal oscillator may be spaced apart, and the crystal oscillator between the first crystal oscillator 211 and the second crystal oscillator 212 may be designated as the intermediate crystal oscillator. When the first crystal oscillator 211 is exposed through the first opening 41 for monitoring, the second crystal oscillator 212 can be exposed through the second opening 42 for pre-plating. Afterwards, the intermediate crystal oscillator is exposed through the first opening 41 for monitoring, and at this time, the third crystal oscillator can be exposed through the second opening 42 for pre-plating. Then, the second crystal oscillator 212 is exposed through the first opening 41 for monitoring. That is, after the pre-plating operation, the second crystal oscillator 212 waits for the first crystal oscillator 211 and the intermediate crystal oscillator to be used for monitoring before monitoring is performed. Compared with the previous embodiment, where the first crystal oscillator 211 and the second crystal oscillator 212 are arranged consecutively, in this embodiment, the waiting time after the pre-plating operation of the second crystal oscillator 212 is extended. The extended time is within a preset range, that is, the adhesion of the Mg / Yb vapor-deposited material is still maintained during the extended time, so that the surface of the crystal oscillator will not be without Mg / Yb material for a long time, and the Mg / Yb rate recovery time is also extended accordingly.

[0053] In one embodiment, multiple crystal oscillators are arranged in a circular ring. Correspondingly, the first opening 41 and the second opening 42 are located on a portion of the arc of the circular ring containing the multiple crystal oscillators. The outer cover 4 and the crystal probe 2 rotate relative to each other, thereby allowing the multiple crystal oscillators to pass through the second opening 42 and the first opening 41 in sequence. Exemplarily, the crystal oscillator assembly 21 includes 10 crystal oscillators.

[0054] The body 1 supports the crystal oscillator probe 2 and the outer cover 4. In one embodiment, the probe structure further includes a driving member (not shown in the figure) disposed on the body 1, which can drive the crystal oscillator probe 2 to move relative to the outer cover 4. Further, the probe structure also includes a connecting shaft 3 disposed on the body 1, wherein the driving member can be a motor or cylinder, etc. The connecting shaft 3 is rotatably connected to the body 1, the crystal oscillator probe 2 is rotatably connected to the body 1 via the connecting shaft 3, the driving member can be connected to the crystal oscillator probe 2 via the connecting shaft 3, and the outer cover 4 is fixedly disposed relative to the body 1. The driving member drives the crystal oscillator probe 2 to rotate via the connecting shaft 3, thereby driving the crystal oscillator probe 2 to rotate relative to the outer cover 4. In another embodiment, the body 1 and the crystal oscillator probe 2 are fixed, and the outer cover 4 can be driven by a driving structure such as a motor, so that the body 1 and the crystal oscillator probe 2 can rotate relative to each other.

[0055] In another embodiment, multiple crystal oscillators are arranged in a straight line, and the outer cover 4 and the crystal probe 2 move relative to each other, so that the multiple crystal oscillators pass through the second opening 42 and the first opening 41 in sequence. Accordingly, the driving component on the body 1 is used to drive the outer cover 4 or the crystal probe 2 to move, so that the two move relative to each other.

[0056] The probe structure also includes a shielding mechanism 5, which includes a shielding member 52 capable of shielding or exposing the second opening 42. Optionally, the shielding mechanism 5 further includes a driving unit, which is disposed on the body 1. The driving unit can drive the shielding member 52 to move, thereby shielding or exposing the second opening 42, achieving automatic shielding or exposure of the second opening 42. In one embodiment, the shielding mechanism 5 further includes a rotating shaft 51. The shielding member 52 is connected to the outer cover 4 via the rotating shaft 51, and the shielding member 52 is located outside the outer cover 4. The rotating shaft 51 can rotate around a center line perpendicular to the plane where the crystal oscillator assembly 21 is located. Specifically, the driving unit is a motor or cylinder, etc. The driving unit is connected to the shielding member 52 via the rotating shaft 51, thereby driving the shielding member 52 to rotate. Optionally, the shielding member 52 can be located in a first position and a second position. When the shielding member 52 is located in the first position, the second opening 42 is blocked by the shielding member 52, and the vapor deposition material cannot be vapor deposited onto the second crystal oscillator 212. When the shielding member 52 is located in the second position, the second opening 42 is exposed by the shielding member 52, and the second crystal oscillator 212 is exposed. At this time, the vapor deposition material can be vapor deposited onto the second crystal oscillator 212 normally.

[0057] Optionally, the blocking member 52 moves between a first position and a second position, where the first position and the second position are the extreme positions of the blocking member 52's movement. During the switching between the first and second positions, the blocking member 52 does not affect the blocking of the first opening 41, nor does it affect the normal monitoring of the currently used crystal oscillator. This ensures that the blocking member 52 will not affect the first opening 41 at any position within its range of motion, thus guaranteeing the reliability of the currently used crystal oscillator.

[0058] Furthermore, multiple crystal oscillators are arranged in a ring shape, and the axis of the rotating shaft 51 coincides with the center line of the ring containing the multiple crystal oscillators. That is, regardless of whether the shielding member 52 is in the first position, the second position, or other positions, the shielding member 52 is always located within the outer contour of the outer cover 4, reducing the overall volume occupied by the probe structure and making the structure more compact. Optionally, the drive unit is mounted on the main body 1 and drives the rotating shaft 51 to rotate through the transmission mechanism, thereby driving the shielding member 52 to rotate. Exemplarily, the axis of the motor output shaft of the drive unit is perpendicular to the rotating shaft 51. The transmission mechanism includes a belt drive assembly, a gear drive assembly, and a worm gear drive assembly. The input end of the belt drive assembly is connected to the motor output shaft, and the output end of the belt drive assembly is connected to the worm. The worm and the worm wheel are driven together. The worm wheel and the driving gear are located on the same mounting shaft, and the driven gear that cooperates with the driving gear is located on the rotating shaft 51, thereby driving the rotating shaft 51 to rotate. Optionally, the axis of the motor output shaft of the drive unit is parallel to and connected to the rotating shaft 51. The rotating shaft 51 passes through the crystal oscillator probe 2 and the outer cover 4, and the other end is connected to the shield 52, thereby driving the rotating shaft 51 to rotate.

[0059] Alternatively, multiple crystal oscillators are arranged in a circular pattern, with the axis of the rotating shaft 51 parallel and spaced apart from the center lines of the arcs containing the crystal oscillators. This means that at least a portion of the blocking member 52 is located outside the outer contour of the outer casing 4. When the blocking member 52 is in the first position, a portion of it coincides with the outer contour of the outer casing 4; when it is in the second position, it does not coincide with the outer contour of the outer casing 4. For example, the motor output shaft of the drive unit is directly connected to the rotating shaft 51, which is located outside the outer contour of the outer casing 4, thereby driving the blocking member 52 to rotate.

[0060] In another embodiment, the shielding mechanism 5 further includes a pin, and the shielding member 52 is rotatably connected to the outer cover 4 via the pin and is located outside the outer cover 4. The rotating shaft 51 can rotate about a center line parallel to the plane where the crystal oscillator assembly 21 is located. Similarly, the shielding member 52 can be located in a first position and a second position. When the shielding member 52 is located in the first position, the second opening 42 is shielded by the shielding member 52; when the shielding member 52 is located in the second position, the second opening 42 is exposed by the shielding member 52.

[0061] In another embodiment, the shielding member 52 is connected to the outside of the outer cover 4 by an elastic member, which has a tendency to drive the shielding member 52 to move towards the outer cover 4, so that the shielding member 52 blocks the second opening 42. The driving unit includes a cylinder, the piston rod of which is connected to the shielding member 52. The piston rod can drive the shielding member 52 to move away from the outer cover 4, thereby exposing the second opening 42. Optionally, the cylinder is located in the body 1, and the connection between the piston rod and the shielding member 52 is located outside the outer contour of the outer cover 4.

[0062] In another embodiment, the shielding member 52 is located inside the outer cover 4. The specific driving method can be rotation or movement to shield the second opening 42. The details will not be elaborated here, and the overall structure will be simpler.

[0063] Optionally, the shield 52 is made of SUS304 material and its surface is sprayed.

[0064] In one embodiment, such as Figure 5 As shown, the shielding part 522 is plate-shaped, and a protrusion 523 is provided on the side of the shielding part 522 facing the outer cover 4. The protrusion 523 can extend into the second opening 42. A guide surface is provided around the protrusion 523, and the cross-sectional area of ​​the protrusion 523 gradually increases from its top to the direction near the shielding part 522. For example, the shielding member 52 is located outside the outer cover 4, and the shielding member 52 has a protrusion 523 that can extend into the second opening 42 to shield the second opening 42, thus improving the shielding effect. The protrusion 523 is provided in the second opening 42, and the cross-sectional area of ​​the protrusion 523 for extending into the second opening 42 is not greater than the opening area of ​​the second opening 42, thereby allowing the protrusion 523 to extend into the second opening 42. For example, the cross-sectional area of ​​the protrusion 523 extending into the second opening 42 is equal to the opening area of ​​the second opening 42, so that the second opening 42 is completely covered, avoiding the circumferential gap between the second opening 42 and the protrusion 523, which would affect the covering effect. However, the second opening 42 and the protrusion 523 of this size are not easy to fit together, and the installation accuracy and movement accuracy requirements are high, so that the protrusion 523 can be inserted into the second opening 42 perfectly and completely covered.

[0065] like Figure 5 As shown, the cross-sectional shape of protrusion 523 is arc-shaped, and its guide surface is also arc-shaped. Figure 6 As shown, the cross-sectional shape of the protrusion 523 is trapezoidal, and its guide surface is an inclined plane. Both of these guide surfaces can play a guiding role when the protrusion 523 extends into or slides out of the second opening 42. Moreover, the structure is simple and easy to manufacture.

[0066] For example, the protrusion 523 extends such that the cross-sectional area of ​​the opening is slightly smaller than the opening area of ​​the second opening 42, thereby partially obscuring the second opening 42. However, a gap remains between the protrusion 523 and the second opening 42, which prevents the second opening 42 from being completely obscured. This affects the obscuring of the crystal oscillator used for pre-plating operations directly opposite the second opening 42, resulting in prolonged exposure time of the crystal oscillator and affecting its subsequent service life.

[0067] Optionally, the cross-sectional area of ​​the shielding part 522 is larger than the maximum cross-sectional area of ​​the protrusion 523. The shielding part 522 is located on one side of the outer cover 4 and is used to shield the side of the outer cover 4, further shielding the second opening 42. Since gaps can easily occur between the shielding part 522 and the outer cover 4, for example, if the shielding part 52 is connected to the outer cover 4 via a rotating shaft 51 and the shielding part 52 is located on the outside of the outer cover 4, and the rotating shaft 51 can rotate around the center line perpendicular to the plane where the crystal oscillator assembly 21 is located, if the shielding part 522 and the outer cover 4 are tightly fitted, the shielding part 522 will always be tightly fitted to the outer cover 4 during the rotation of the rotating shaft 51, resulting in wear between the two and seriously affecting their service life. The shielding part 522 and the outer cover 4 are fitted with a gap between their surfaces facing each other. However, the gap between them will cause the second opening 42 to be unable to be completely shielded, which will affect the shielding of the crystal oscillator used for pre-plating operations that is facing the second opening 42. This will result in the crystal oscillator being exposed for a longer period of time, affecting its subsequent service life.

[0068] Therefore, in this embodiment, the protrusion 523 extends in such a way that the cross-sectional area of ​​the opening is slightly smaller than the opening area of ​​the second opening 42, thereby partially blocking the second opening 42. Furthermore, the cross-sectional area of ​​the blocking portion 522 is larger than the maximum cross-sectional area of ​​the protrusion 523. The blocking portion 522 is located on one side of the outer cover 4 and is used to block the side of the outer cover 4, further blocking the second opening 42. By combining these two methods, the second opening 42 can be blocked, improving the blocking effect.

[0069] Optionally, the shapes of the first opening 41 and the second opening 42 are adapted to the shape of the crystal oscillator. The opening areas of the first opening 41 and the second opening 42 are not less than the area of ​​the crystal oscillator. Further, the opening areas of the first opening 41 and the second opening 42 are slightly larger than the area of ​​the crystal oscillator to ensure that the crystal oscillator is completely exposed through the first opening 41 or the second opening 42. Furthermore, the arrangement of the first opening 41 and the second opening 42 will not cause other crystal oscillators not directly opposite the first opening 41 and the second opening 42 to be exposed; that is, other crystal oscillators will be shielded by the outer cover 4 to avoid affecting their service life. For example, the crystal oscillator is a circular piece, and both the first opening 41 and the second opening 42 are circular holes. The opening areas of the first opening 41 and the second opening 42 can be the same or different, and are not limited thereto.

[0070] Optionally, the blocking member 52 includes a connecting portion 521 and a blocking portion 522. The connecting portion 521 is connected to the rotating shaft 51. The blocking portion 522 can block the second opening 42. The shape of the blocking portion 522 is adapted to the opening shape of the second opening 42, and the cross-sectional area of ​​the blocking portion 522 is not less than the opening area of ​​the second opening 42, ensuring that the second opening 42 can be completely blocked by the blocking portion 522, thus ensuring the effect. For example, the second opening 42 is a circular hole, and the blocking portion 522 is circular in shape.

[0071] In some possible implementations, the probe structure also includes a monitoring component, with the crystal oscillator probe 2, the drive unit, and the detection component all communicatively connected to the monitoring component. The monitoring component may specifically include a microcontroller, etc., and is used to receive detection signals from the detection component and to control the crystal oscillator probe 2 and the drive unit. The drive unit is mounted on the main body 1, and the monitoring component can perform drive actions via command signals.

[0072] Optionally, the detection component includes a frequency counter, which obtains the frequency by directly counting the periods of the crystal oscillator signal. The specific steps are as follows: Place the probe of the frequency counter on the crystal oscillator pins. Read the measured value, ensuring that the range of the frequency counter used is higher than the frequency of the crystal oscillator being checked. The frequency counter feeds back a signal to the monitoring component. When the frequency of the crystal oscillator exceeds a preset value or a preset range value, it indicates that the current crystal oscillator's lifespan has reached the set value or it has lost its activity. The monitoring component controls the crystal oscillator probe 2 to rotate, so that the next crystal oscillator to be tested is exposed through the first opening 41, and the next crystal oscillator to be tested is exposed or blocked through the second opening 42, thus achieving pre-plating. According to actual needs, the monitoring component controls the drive unit to drive the blocking component 52 to move. After receiving the signal, the drive unit transmits the signal to the connecting shaft 3 through a drive action. The connecting shaft 3 rotates to control the blocking component 52 to perform switching actions, rotating it to a designated position, such as rotating the blocking component 52 to the first position to block the second opening 42, or rotating the blocking component 52 to the second position to expose the second opening 42.

[0073] Optionally, the node settings for controlling the rotation of the shielding component 52 to the first and second positions, as well as the crystal oscillator switching settings, can all be entered into the monitoring component. Specific node settings can be obtained through calculation or experimentation. That is, when the crystal oscillator probe 2 rotates, the shielding component 52 moves according to the set requirements. The shielding component 52 can be set with movement trigger conditions to expose the second crystal oscillator 212 to the material deposition environment in advance, allowing for pre-deposition of the material and reducing the rate recovery time when the second crystal oscillator 212 switches to the first opening 41 position.

[0074] like Figure 7As shown, this embodiment also provides a method of using the probe structure for the vapor deposition apparatus described above. The multiple crystal oscillators in the crystal oscillator assembly include a first crystal oscillator 211 and a second crystal oscillator 212. The method of use includes the following steps:

[0075] S100, the first crystal oscillator 211 is exposed through the first opening 41, and the second opening 42 is blocked;

[0076] S200. Based on the result of the detection component detecting the crystal frequency of the first crystal oscillator 211, determine whether the crystal frequency of the first crystal oscillator 211 has reached the first preset value. If yes, the second opening 42 is exposed, thereby exposing the second crystal oscillator 212. Further, if no, the second opening 42 continues to be blocked, that is, the second opening 42 is only exposed when the crystal frequency of the first crystal oscillator 211 reaches the first preset value, otherwise it is always blocked.

[0077] S300 and the second crystal oscillator 212 are vapor-deposited by the vapor deposition source to form a coating;

[0078] S400: Based on the result of the detection component detecting the crystal frequency of the first crystal oscillator 211, determine whether the crystal frequency of the first crystal oscillator 211 reaches the second preset value. If yes, the crystal probe 2 and the outer cover 4 move relative to each other, exposing the second crystal oscillator 212 through the first opening 41. Further, if no, the crystal probe 2 and the outer cover 4 remain stationary, and the first crystal oscillator 211 is still used for detection, while the second crystal oscillator 212 remains in pre-plating operation. The first preset value is greater than the second preset value.

[0079] Furthermore, in step S400, when the second crystal oscillator 212 is exposed through the first opening 41, the second opening 42 is blocked.

[0080] The usage method also includes the following steps:

[0081] S500: Based on the result of the detection component detecting the crystal frequency of the second crystal oscillator 212, determine whether the crystal frequency of the second crystal oscillator 212 has reached the first preset value. If yes, the second opening 42 is exposed, thereby exposing the next crystal oscillator, i.e., the third crystal oscillator.

[0082] S600 and the third crystal oscillator are vapor-deposited by the vapor deposition source to form a coating;

[0083] S700. Based on the result of the detection component detecting the crystal frequency of the second crystal oscillator 212, determine whether the crystal frequency of the second crystal oscillator 212 has reached the second preset value. If yes, the crystal probe 2 and the outer cover 4 move relative to each other, so that the third crystal oscillator is exposed through the first opening 41. Subsequent crystal oscillators follow the above process and are cycled in sequence until all crystal oscillators are exposed through the first opening 41 for detection of the evaporation rate.

[0084] By setting a first opening 41 and a second opening 42, the crystal oscillator currently in use (such as the first crystal oscillator 211) is exposed through the first opening 41 for real-time monitoring of the evaporation rate. Without affecting the crystal oscillator's lifespan, the next crystal oscillator to be used (such as the second crystal oscillator 212) can be exposed in advance for material evaporation, thus achieving pre-plating. When the lifespan of the currently used crystal oscillator reaches a set value or loses activity, it automatically switches to the next crystal oscillator to be used. The next crystal oscillator is exposed by aligning with the first opening 41 to take over from the previous crystal oscillator and continue monitoring the evaporation rate. Because pre-plating has already been performed, the rate recovery time after switching crystal oscillators is greatly reduced during use.

[0085] The second crystal oscillator 212 is pre-plated only when the crystal frequency of the first crystal oscillator 211 reaches the first preset value. Once the crystal frequency of the first crystal oscillator 211 reaches the second preset value, the second crystal oscillator 212 is immediately switched to be exposed through the first opening 41 for evaporation rate detection. By setting the first and second preset values, the pre-plating effect of the second crystal oscillator 212 is ensured. This ensures: 1) the pre-plating time is not prolonged, avoiding over-plating and affecting the lifespan of the crystal oscillator; 2) the waiting time after pre-plating is not prolonged, avoiding reduced adhesion and affecting performance; and 3) the pre-plating process is not delayed until the first crystal oscillator 211 has reached its lifespan or lost activity, thus avoiding impact on overall efficiency. By precisely matching the timing of the two crystal oscillators, when the first crystal oscillator 211 reaches its service life and the set value or loses its activity, the second crystal oscillator 212 finishes its pre-plating operation and is switched to replace the first crystal oscillator 211, reducing waiting time, thereby improving work efficiency, avoiding production disruptions, and reducing downtime.

[0086] By using the probe structure and operating method of the vapor deposition device proposed in this solution, the switching time of Mg / Yb crystal oscillators can be reduced to less than 3 minutes, which greatly shortens the rate stabilization time after the switching of Mg / Yb crystal oscillators and improves production efficiency.

[0087] Specifically, the first and second preset values ​​can be obtained through experiments or calculations. Optionally, the first preset value is 5930000Hz, and the second preset value is less than 5930000Hz. Optionally, the second preset value is 5923000Hz, and the first preset value is greater than 5923000Hz. Optionally, the first preset value is 5930000Hz, and the second preset value is 5923000Hz.

[0088] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A probe structure for a vapor deposition apparatus, characterized in that, The vapor deposition equipment includes a vapor deposition source, and the probe structure includes: Ontology(1); A crystal oscillator probe (2) is disposed on the body (1). The crystal oscillator probe (2) includes a crystal oscillator chip assembly (21), which includes a plurality of crystal oscillators. An outer cover (4) is disposed on the body (1) and covers the crystal oscillator assembly (21). The outer cover (4) has a first opening (41) and a second opening (42). Both the first opening (41) and the second opening (42) face the vapor deposition source. The second opening (42) can be selectively blocked or exposed. The crystal oscillator probe (2) and the outer cover (4) can move relative to each other, so that multiple crystal oscillators can be exposed sequentially through the first opening (41). When one crystal oscillator is exposed through the first opening (41), another crystal oscillator can be exposed through the second opening (42), and the other crystal oscillators are blocked by the outer cover (4). A detection component is used to detect the crystal frequency of the crystal oscillator exposed in the first opening (41).

2. The probe structure for a vapor deposition apparatus according to claim 1, characterized in that, The probe structure also includes a shielding mechanism (5), which includes a shielding member (52) capable of shielding or exposing the second opening (42).

3. The probe structure for a vapor deposition apparatus according to claim 2, characterized in that, The shielding mechanism (5) further includes a driving unit that can drive the shielding member (52) to move in order to shield or expose the second opening (42).

4. The probe structure for a vapor deposition apparatus according to claim 3, characterized in that, It also includes a monitoring component, wherein the crystal oscillator probe (2), the driving unit and the detection component are all communicatively connected to the monitoring component.

5. The probe structure for a vapor deposition apparatus according to any one of claims 2-4, characterized in that, The shielding mechanism (5) further includes a rotating shaft (51). The shielding member (52) is connected to the outer cover (4) via the rotating shaft (51) and the shielding member (52) is located outside the outer cover (4). The rotating shaft (51) can rotate about the center line of the plane perpendicular to the crystal oscillator assembly (21).

6. The probe structure for a vapor deposition apparatus according to claim 5, characterized in that, The multiple crystal oscillators are arranged in a ring shape, and the axis of the rotating shaft (51) coincides with the center line of the ring in which the multiple crystal oscillators are located.

7. The probe structure for a vapor deposition apparatus according to claim 5, characterized in that, The shielding member (52) includes a connecting part (521) and a shielding part (522). The connecting part (521) is connected to the rotating shaft (51). The shielding part (522) can shield the second opening (42). The shape of the shielding part (522) and the opening shape of the second opening (42) are adapted to each other, and the cross-sectional area of ​​the shielding part (522) is not less than the opening area of ​​the second opening (42).

8. The probe structure for a vapor deposition apparatus according to claim 7, characterized in that, The shielding part (522) is plate-shaped, and the shielding part (522) has a protrusion (523) on the side facing the outer cover (4). The protrusion (523) can extend into the second opening (42). The protrusion (523) has a guide surface in its circumference, and the cross-sectional area of ​​the protrusion (523) gradually increases from its top to the direction close to the shielding part (522).

9. A method of using a probe structure for a vapor deposition apparatus as described in any one of claims 1-8, characterized in that, The crystal oscillator assembly includes multiple crystal chips, including a first crystal chip (211) and a second crystal chip (212), comprising: The first crystal oscillator (211) is exposed through the first opening (41), while the second opening (42) is blocked; Based on the result of the detection component detecting the crystal frequency of the first crystal oscillator (211), it is determined whether the crystal frequency of the first crystal oscillator (211) reaches the first preset value. If yes, the second opening (42) is exposed, thereby exposing the second crystal oscillator (212). The second crystal oscillator (212) is coated by the evaporation source to form a film; Based on the result of the detection component detecting the crystal frequency of the first crystal oscillator (211), it is determined whether the crystal frequency of the first crystal oscillator (211) reaches the second preset value. If yes, the crystal probe (2) and the outer cover (4) move relative to each other, so that the second crystal oscillator (212) is exposed through the first opening (41); wherein, the first preset value is greater than the second preset value.

10. The method of using the probe structure for a vapor deposition apparatus according to claim 9, characterized in that, The first preset value is 5930000Hz, and / or the second preset value is 5923000Hz.

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