Evaporation rate monitoring device, evaporation apparatus, evaporation method, and display panel

Abstract

The application discloses an evaporation rate monitoring device, an evaporation device, an evaporation method and a display panel. The evaporation rate monitoring device comprises: a plurality of crystal vibration pieces; a baffle assembly, the baffle assembly comprises a plurality of first baffles arranged at intervals, the first baffles comprise shielding parts and first openings; a switching assembly, the switching assembly is connected with the baffle assembly and is configured to drive the first baffles to move relative to the crystal vibration pieces, so that different first baffles shield the crystal vibration pieces; a baffle detection assembly, the baffle detection assembly is arranged opposite to the baffle assembly and is used for detecting the surface material attachment thickness of the first baffles and / or the opening rate of the first openings of the first baffles; and a control assembly, the control assembly is signal-connected with the switching assembly and the baffle detection assembly respectively to control the switching of the first baffles. Through the automatic switching of the first baffles, the accuracy of evaporation rate monitoring and the evaporation yield are improved.

Description

Technical Field

[0001] This application belongs to the field of display technology, and in particular relates to a vapor deposition rate monitoring device, vapor deposition equipment, vapor deposition method and display panel. Background Technology

[0002] Organic light-emitting diodes (OLEDs) and flat panel displays based on light-emitting diodes (LEDs) are widely used in various consumer electronics products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body, and wide range of applications, becoming the mainstream of display panels.

[0003] The film layer of the display panel needs to be formed by evaporation equipment, and the evaporation rate needs to be monitored by an evaporation rate monitoring device. However, due to the structural limitations of the existing evaporation rate monitoring device, the accuracy of the evaporation rate monitoring cannot meet the requirements.

[0004] Therefore, there is an urgent need for a new vapor deposition rate monitoring device, vapor deposition equipment, vapor deposition method, and display panel. Summary of the Invention

[0005] This application provides a vapor deposition rate monitoring device, vapor deposition equipment, vapor deposition method, and display panel. By automatically switching the first baffle, the opening ratio of the first baffle gradually decreases due to the increase in material deposition at the first opening position of the first baffle as the vapor deposition time increases, thereby preventing the vapor deposition film thickness from being too thick. This improves the optical performance and viewing angle deviation of the product, and enhances the accuracy of vapor deposition rate monitoring and vapor deposition yield.

[0006] One embodiment of this application provides a vapor deposition rate monitoring device for monitoring the vapor deposition rate of a vapor deposition equipment. The vapor deposition rate monitoring device includes: a plurality of crystal oscillators; a baffle assembly disposed opposite to the crystal oscillators, the baffle assembly including a plurality of spaced-apart first baffles, each first baffle including a shielding portion and a first opening, the first opening exposing at least one of the crystal oscillators, the opening areas of the first openings of different first baffles being the same; a switching assembly connected to the baffle assembly and configured to drive the first baffles to move relative to the crystal oscillators, so that different first baffles shield the crystal oscillators; a baffle detection assembly disposed opposite to the baffle assembly, used to detect the material adhesion thickness on the surface of the first baffles, and / or the opening ratio of the first openings of the first baffles; and a control assembly signal-connected to the switching assembly and the baffle detection assembly respectively, to control the switching of the first baffles.

[0007] According to one aspect of this application, the switching component includes a rotating platform and a drive unit connected to the rotating platform, the baffle assembly is disposed on the rotating platform, and the drive unit drives the rotating platform to rotate together with the first baffle located on the rotating platform; preferably, the drive unit includes a stepper motor or a servo motor; preferably, the switching component is configured to be manually controllable.

[0008] According to one aspect of this application, the switching component further includes a position detection mechanism for detecting the position of the first baffle; preferably, the position detection mechanism includes a photoelectric sensor.

[0009] According to one aspect of this application, the baffle detection assembly includes a material thickness detection sensor configured to detect the material adhesion thickness on the surface of the first baffle in real time; and / or, the baffle detection assembly includes an aperture ratio detection sensor configured to detect the aperture ratio of the first opening of the first baffle in real time; preferably, the material thickness detection sensor includes a laser rangefinder; preferably, the material thickness detection sensor includes an optical sensor.

[0010] According to one aspect of this application, the first baffle is circular and the first opening is fan-shaped; preferably, the first baffle is provided with at least two first openings; preferably, the first baffle is provided with two first openings, and the extension lines of the center lines of the two first openings are located on the same straight line.

[0011] According to one aspect of this application, the vapor deposition rate monitoring device further includes a fault detection mechanism configured to issue an alarm upon detecting an abnormality in the vapor deposition rate monitoring device.

[0012] Another embodiment of this application provides a vapor deposition apparatus for preparing a display panel, including a vapor deposition source and a vapor deposition rate monitoring device as described in any of the above embodiments, wherein at least one first opening of a first plate in the vapor deposition rate monitoring device faces the vapor deposition source.

[0013] This application provides another aspect of a vapor deposition method, wherein the vapor deposition method is performed using the vapor deposition equipment in any of the above embodiments, and includes the following steps: starting the vapor deposition source for vapor deposition, wherein one of the first baffles in the baffle assembly is correspondingly configured with the vapor deposition source so that vapor deposition material is formed on the corresponding crystal oscillator through a first opening; detecting whether the surface material adhesion thickness of the first baffle is greater than or equal to a first preset value, and / or detecting whether the opening ratio of the first opening of the first baffle corresponding to the vapor deposition source is less than or equal to a second preset value, if the surface material adhesion thickness is greater than or equal to the first preset value, or if the opening ratio of the first opening of the first baffle corresponding to the vapor deposition source is less than or equal to the second preset value, then the vapor deposition source stops vapor deposition, and the control component controls the switching component to drive the first baffle to move relative to the crystal oscillator to switch the other first baffle to be correspondingly configured with the vapor deposition source; restarting the vapor deposition source for vapor deposition.

[0014] According to another aspect of this application, in the step of detecting whether the surface material adhesion thickness of the first baffle is greater than or equal to a first preset value by the baffle detection component, and / or detecting whether the aperture ratio of the first opening of the first baffle corresponding to the evaporation source is less than or equal to a second preset value, if the surface material adhesion thickness is greater than or equal to the first preset value, or if the aperture ratio of the first opening of the first baffle corresponding to the evaporation source is less than or equal to the second preset value, then the evaporation source stops evaporation, and the control component controls the switching component to drive the first baffle to move relative to the crystal oscillator to switch another first baffle corresponding to the evaporation source. This includes: detecting whether the surface material adhesion thickness of the first baffle is greater than or equal to a first preset value through a baffle detection component, and / or detecting whether the opening ratio of the first opening of the first baffle corresponding to the vapor deposition source is less than or equal to a second preset value. If the surface material adhesion thickness is greater than or equal to the first preset value, or the opening ratio of the first opening of the first baffle corresponding to the vapor deposition source is less than or equal to the second preset value, then the vapor deposition source stops vapor deposition, and the control component controls the drive component in the switching component to drive the rotating stage to rotate, so as to drive the first baffle located on the rotating stage to rotate together, and switch another first baffle to be corresponding to the vapor deposition source.

[0015] In another aspect, this application provides a display panel that is prepared using the vapor deposition equipment described in any of the above embodiments.

[0016] Compared with the prior art, the vapor deposition rate monitoring device provided in this embodiment of the invention includes a crystal oscillator, a baffle assembly, a baffle detection assembly, a switching assembly, and a control assembly. In this embodiment, the vapor deposition rate can be monitored by monitoring the frequency of vibration of the material deposited on the crystal oscillator. Since the number of existing crystal oscillators is limited, the baffle assembly can be used to block a part of the material, reduce the amount of material deposited on the crystal oscillator, and thus reduce the consumption of the crystal oscillator. Furthermore, in this embodiment, the baffle detection component can monitor in real time whether the material adhesion thickness on the surface of the first baffle and / or the aperture ratio of the first opening exceeds a threshold. If it does, the control component controls the switching component to drive the first baffle to move relative to the crystal oscillator, so that different first baffles block the crystal oscillator, thereby achieving the switching of the first baffle. This avoids the problem of the aperture ratio gradually decreasing due to the increase in material deposition at the first opening position of the first baffle as the evaporation time increases, which would otherwise cause the evaporation film thickness to be too thick. This improves the optical performance and viewing angle deviation of the product, increases the accuracy of evaporation rate monitoring and evaporation yield. At the same time, the automatic switching of the first baffle by the switching component can avoid the phenomenon of abnormal evaporation film thickness and large differences in the angle of personnel installing the baffle component caused by over-adjustment and under-adjustment due to the TF parameter compensation mechanism. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the vapor deposition rate monitoring device provided in one embodiment of the present invention;

[0019] Figure 2 This is a top view of a switching component provided in one embodiment of the present invention;

[0020] Figure 3 This is a front view of a switching component provided in one embodiment of the present invention;

[0021] Figure 4 This is a top view of a crystal oscillator chip provided in one embodiment of the present invention;

[0022] Figure 5 This is a flowchart of a vapor deposition method provided in one embodiment of the present invention;

[0023] Figures 6 to 7 This is a schematic diagram of the vapor deposition equipment used in the preparation process of a vapor deposition method provided in one embodiment of the present invention.

[0024] In the attached image:

[0025] 10-Crystal oscillator; 20-Baffle assembly; 21-First baffle; 30-Switching assembly; 31-Rotating stage; 32-Driver; 40-Baffle detection assembly; 50-Control assembly; 60-Evaporation source; 70-Substrate to be vaporized; Z-Crystal oscillator holder; K1-First opening. Detailed Implementation

[0026] The features and exemplary embodiments of various aspects of this application will now be described in detail. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain this application and are not configured to limit this application. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples of this application.

[0027] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes said element.

[0028] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, that layer or region will be located "below" or "under" the other layer or region.

[0029] Various modifications and variations can be made to this application without departing from its spirit or scope, which will be apparent to those skilled in the art. Therefore, this application is intended to cover modifications and variations falling within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the embodiments provided in this application can be combined with each other without contradiction.

[0030] This application provides a vapor deposition rate monitoring device, vapor deposition equipment, vapor deposition method, and display panel. The following will describe these in conjunction with the accompanying drawings. Figures 1 to 7 Various embodiments of the vapor deposition rate monitoring device, vapor deposition equipment, vapor deposition method, and display panel are described.

[0031] Please see Figures 1 to 4 , Figure 1 This is a schematic diagram of the vapor deposition rate monitoring device provided in one embodiment of the present invention; Figure 2 This is a top view of a switching component provided in one embodiment of the present invention; Figure 3 This is a front view of a switching component provided in one embodiment of the present invention; Figure 4 This is a top view of a crystal oscillator chip provided in one embodiment of the present invention.

[0032] This application provides a vapor deposition rate monitoring device for monitoring the vapor deposition rate of a vapor deposition equipment. The vapor deposition rate monitoring device includes: a plurality of crystal oscillators 10; a baffle assembly 20, which is disposed opposite to the crystal oscillators 10, the baffle assembly 20 including a plurality of spaced first baffles 21, each first baffle 21 including a blocking portion and a first opening K1, the first opening K1 exposing at least one crystal oscillator 10, and the opening area of ​​the first opening K1 of different first baffles 21 being the same; a switching assembly 30, which is connected to the baffle assembly 20 and configured to drive the first baffles 21 to move relative to the crystal oscillators 10 so that different first baffles 21 block the crystal oscillators 10; a baffle detection assembly 40, which is disposed opposite to the baffle assembly 20, for detecting the thickness of the material adhesion on the surface of the first baffle 21, and / or the opening ratio of the first opening K1 of the first baffle 21; and a control assembly 50, which is signal-connected to the switching assembly 30 and the baffle detection assembly 40 respectively, to control the switching of the first baffles 21.

[0033] The vapor deposition rate monitoring device provided in this embodiment of the invention includes a crystal oscillator 10, a baffle assembly 20, a baffle detection assembly 40, a switching assembly 30, and a control assembly 50. In this embodiment, the vapor deposition rate can be monitored by monitoring the frequency of vibration of the material deposited on the crystal oscillator 10. Since the number of existing crystal oscillators 10 is limited, the baffle assembly 20 can be used to block a part of the material, reduce the amount of material deposited on the crystal oscillator 10, and thus reduce the consumption of the crystal oscillator 10. Furthermore, in this embodiment, the baffle detection component 40 can monitor in real time whether the thickness of the material adhesion on the surface of the first baffle 21 and / or the aperture ratio of the first opening K1 exceed a threshold. If they do, the control component 50 controls the switching component 30 to drive the first baffle 21 to move relative to the crystal oscillator 10, so that different first baffles 21 block the crystal oscillator 10, thereby achieving the switching of the first baffle 21. This avoids the problem of the aperture ratio gradually decreasing due to the increase in material deposition at the first opening K1 position of the first baffle 21 as the evaporation time increases, which would otherwise cause the evaporated film thickness to be too thick. This improves the optical performance and viewing angle deviation of the product, and increases the accuracy of evaporation rate monitoring and evaporation yield. At the same time, the automatic switching of the first baffle 21 by the switching component 30 can avoid the phenomenon of abnormal evaporated film thickness and large differences in the angle of personnel installing the baffle component 20 caused by over-adjustment and under-adjustment due to the TF parameter compensation mechanism. Here, the TF parameter refers to a compensation coefficient used to correct the difference between the evaporation display rate and the actual rate.

[0034] In the production and manufacturing of OLED display panels, a vacuum evaporation process is required to deposit a film layer on the surface of components such as substrates. Specifically, in vacuum evaporation, the component to be coated is placed in a vacuum environment, and the evaporation material from the evaporation source 60 is evaporated or sublimated by heating. The vaporized evaporation material is then deposited onto the surface of the component to be coated, thus completing the coating. The evaporation equipment typically includes an evaporation chamber and a evaporation source 60, such as a crucible, located within the evaporation chamber. During the evaporation operation, the substrate or other components are placed inside the evaporation chamber, and the evaporation source, such as the crucible, is heated, causing the evaporation material inside the crucible to be ejected and deposited onto the substrate surface.

[0035] To monitor the evaporation rate during the evaporation process, the evaporation equipment also includes an evaporation rate monitoring device. This device comprises a crystal oscillator Z and a crystal oscillator 10 mounted on the Z. The crystal oscillator 10 is located within or connected to the evaporation chamber of the evaporation equipment. When the evaporation equipment performs evaporation on the component to be evaporated, such as a substrate, the evaporation material is deposited not only on the substrate surface to form the target film layer but also on the surface of the crystal oscillator 10, forming a film layer. When the crystal oscillator 10 undergoes changes in mass and volume due to film deposition, it generates a large and easily detectable amplitude change under piezoelectric resonance. The rate monitoring device can then detect changes in the film thickness on the crystal oscillator 10 by monitoring these amplitude and other parameters, thereby monitoring the evaporation rate of the film layer on the crystal oscillator 10 and further monitoring the overall evaporation rate and the thickness of the target film layer in the entire evaporation equipment.

[0036] In existing technologies, vapor deposition rate monitoring devices typically use TF parameters to calibrate and correct for excessively thick or thin vapor deposition films. However, due to differences in different vapor deposition material systems and deposition times, the deposition thickness varies. Both manual and automatic compensation mechanisms can easily lead to over-compensation or under-compensation of TF, resulting in incomplete avoidance of film thickness fluctuations. Furthermore, during manual operation, the uncertainty of the operator's awareness and technique can easily lead to excessively different installation angles of the first baffle 21, thus affecting normal rate monitoring.

[0037] To address the aforementioned issues, this embodiment employs a control component 50, a baffle detection component 40, and a switching component 30 to drive the first baffle 21 to move relative to the crystal oscillator 10. This allows different first baffles 21 to block the crystal oscillator 10, achieving automatic switching of the first baffle 21. Compared to the manual switching method in the prior art, the switching component 30 ensures that each first baffle 21 is installed at the same angle, resulting in high operational efficiency, a wide range, high efficiency, and automatic replacement capabilities. This saves manpower and ensures the accuracy of the evaporation rate monitoring device in detecting the evaporation rate corresponding to the evaporated film layer.

[0038] Please see Figure 4In this embodiment, multiple crystal oscillators 10 can be arranged sequentially on the crystal oscillator base Z according to a certain order or pattern. By rotating and moving the crystal oscillator base Z, the crystal oscillators 10 are switched one by one to the detection position in the evaporation equipment and deposit a film layer of evaporation material. This allows the film thickness detection component to perform the film deposition rate detection function. Specifically, the crystal oscillators 10 can be arranged in a ring or other arrangement. After the film layer of the crystal oscillator 10 being detected reaches a certain thickness, it can switch to the next adjacent crystal oscillator 10 and continue detection, and so on, until all crystal oscillators 10 have completed the detection function.

[0039] In this embodiment, the baffle assembly 20 includes multiple first baffles 21. During vapor deposition detection, one first baffle 21 is controlled to be positioned opposite to the crystal oscillator 10. That is, the first baffle 21 will block part of the crystal oscillator 10 and expose one or more crystal oscillators 10 through the first opening K1. After a certain period of vapor deposition, the vapor deposition material will be deposited on the surface of the corresponding first baffle 21, causing the first opening K1 to be covered by the vapor deposition material, which in turn causes the first opening K1 to shrink and the opening ratio to decrease. When the baffle detection assembly 40 monitors that the thickness of the material adhesion on the surface of the first baffle 21 and / or the opening ratio of the first opening K1 exceeds the threshold, the first baffle 21 in the baffle assembly 20 can be moved by the switching assembly 30 to remove the first baffle 21 that does not meet the requirements and set another first baffle 21 that meets the requirements opposite to the crystal oscillator 10. After the switching is completed, the vapor deposition process continues.

[0040] It should be noted that the opening area of ​​the first opening K1 of different first baffles 21 is the same, so as to ensure that when different first baffles 21 are switched, the shielding effect of each first baffle 21 on the crystal oscillator 10 is the same, thus ensuring the accuracy of the measurement.

[0041] Optionally, the control component 50 may include a PLC (Programmable Logic Controller) or a computer, which can be used to process the data from the baffle detection component 40 and control the switching component 30.

[0042] Please see Figures 2 to 3 In some optional embodiments, the switching component 30 includes a rotating platform 31 and a drive member 32 connected to the rotating platform 31. The baffle assembly 20 is disposed on the rotating platform 31, and the drive member 32 drives the rotating platform 31 to rotate together with the first baffle 21 located on the rotating platform 31.

[0043] Understandably, the rotating stage 31 can rotate under the drive of the drive unit 32, so as to drive the first baffle 21 located on the rotating stage 31 to rotate together, thereby changing the relative position of each first baffle 21 and the crystal oscillator 10, and thus enabling different first baffles 21 to block the crystal oscillator 10.

[0044] Optionally, the rotating platform 31 may include a frustum structure, and the first baffle 21 may be disposed on the surface of the frustum structure and evenly arranged around the center line of the frustum, so as to facilitate precise adjustment and control of the position of the first baffle 21.

[0045] Of course, the rotating stage 31 can also be selected with other structural shapes, such as an elliptical cylindrical structure.

[0046] Optionally, the drive unit 32 may include a stepper motor or a servo motor, as long as it can drive the rotating stage 31 and is convenient for rotation speed and angle.

[0047] Optionally, the switching component 30 is configured to be manually controllable for easy maintenance and debugging.

[0048] In some optional embodiments, the switching component 30 further includes a position detection mechanism for detecting the position of the first baffle 21. The position detection mechanism can be mounted on the rotating stage 31 for easy detection.

[0049] It should be noted that the position detection mechanism is used to ensure that the first baffle 21 is rotated to a precise position so that the aperture ratio of each first baffle 21 remains unchanged, the position of each first baffle 21 opposite to the crystal oscillator 10 is the same, and the tilt angle of the corresponding first baffle 21 relative to the crystal oscillator 10 is consistent, so as to ensure that when switching different first baffles 21, the blocking effect of each first baffle 21 on the crystal oscillator 10 is the same, thus ensuring the accuracy of the measurement.

[0050] Optionally, the position detection mechanism includes a photoelectric sensor. A photoelectric sensor is a device that uses the photoelectric effect to convert light signals into electrical signals. The position of the first baffle 21 is detected by measuring the distance between the photoelectric sensor and the first baffle 21.

[0051] In some alternative embodiments, the baffle detection assembly 40 includes a material thickness detection sensor configured to detect the thickness of the material adhering to the surface of the first baffle 21 in real time.

[0052] It should be noted that, through research and experimentation, the inventors discovered that when the thickness of the material adhering to the surface of the first baffle 21 is greater than the first preset value, the first opening K1 of the first baffle 21 will become smaller, affecting the accuracy of the vapor deposition rate monitoring device in detecting the vapor deposition rate. Therefore, it is necessary to set up a material thickness detection sensor to detect the thickness of the material adhering to the surface of the first baffle 21 in real time. When the thickness of the material adhering to the surface of the first baffle 21 is greater than the first preset value, a new first baffle 21 can be switched in time by the switching component 30, thus ensuring the accuracy of the vapor deposition rate monitoring device in detecting the vapor deposition rate.

[0053] And / or, the baffle detection component 40 includes an aperture ratio detection sensor, which is configured to detect the aperture ratio of the first aperture K1 of the first baffle 21 in real time. If the aperture ratio of the first aperture K1 of the first baffle 21 corresponding to the vapor deposition source 60 is detected to be less than or equal to a second preset value, vapor deposition needs to be stopped. A new first baffle 21 is switched by the switching component 30, which ensures the accuracy of the vapor deposition rate monitoring device in detecting the vapor deposition rate.

[0054] Optionally, the material thickness detection sensor includes a laser rangefinder;

[0055] Optionally, the material thickness detection sensor may include an optical sensor.

[0056] Please see Figure 2 In some alternative embodiments, the first baffle 21 is circular and the first opening K1 is fan-shaped to expose part of the crystal oscillator 10.

[0057] Optionally, the first baffle 21 is provided with at least two first openings K1 so that at least two crystal oscillators 10 are exposed for comparison of the vapor deposition effect, ensuring the accuracy of the vapor deposition rate detection.

[0058] Optionally, the first baffle 21 is provided with two first openings K1, and the extension lines of the center lines of the two first openings K1 are located on the same straight line. That is, the two first openings K1 can be symmetrically arranged about the center of the first baffle 21, which makes it easy to expose different crystal oscillators 10.

[0059] Depending on actual needs, more first openings K1 can also be set in the first baffle 21.

[0060] In some optional embodiments, the vapor deposition rate monitoring device further includes a fault detection mechanism configured to issue an alarm upon detecting an abnormality in the vapor deposition rate monitoring device.

[0061] The evaporation rate monitoring device has a fault detection function, which issues an alarm and stops operation when an abnormality is detected. Abnormalities may include problems affecting the normal operation of the evaporation rate monitoring device, such as malfunctions in the switching component 30, the baffle detection component 40, or the control component 50. Optionally, the fault detection mechanism may include different fault detection sections such as a circuit detection unit, a signal detection unit, or a position detection unit.

[0062] Please see Figure 6 or Figure 7 The present invention also provides a vapor deposition apparatus for preparing a display panel, including a vapor deposition source 60 and a vapor deposition rate monitoring device as described in any of the above embodiments. The first opening K1 of at least one first plate in the vapor deposition rate monitoring device faces the vapor deposition source 60, so that the material ejected from the vapor deposition source 60 can be partially deposited on the corresponding crystal oscillator 10 through the first opening K1.

[0063] Optionally, the substrate 70 to be vaporized and the vaporization source 60 are arranged opposite each other.

[0064] When the evaporation source 60 is started for evaporation, the baffle detection component 40 can monitor in real time whether the material adhesion thickness on the surface of the first baffle 21 and / or the aperture ratio of the first opening K1 exceed the threshold. If they exceed the threshold, the control component 50 controls the switching component 30 to drive the first baffle 21 to move relative to the crystal oscillator 10, so that different first baffles 21 block the crystal oscillator 10, thereby achieving the switching of the first baffle 21. This avoids the gradual decrease in aperture ratio caused by the increase in material deposition at the first opening K1 position of the first baffle 21 due to the increase in evaporation time, which would result in an excessively thick evaporation film, affecting the optical performance and viewing angle deviation of the product, and improving the evaporation yield. At the same time, the automatic switching of the first baffle 21 by the switching component 30 can avoid the phenomenon of abnormal evaporation film thickness caused by over-adjustment and under-adjustment due to the TF parameter compensation mechanism, and the large difference in the angle of personnel installing the baffle component 20.

[0065] Please see Figure 5 This invention also provides a vapor deposition method, which involves performing vapor deposition using the vapor deposition equipment described in the above embodiments, and includes the following steps:

[0066] S110: The evaporation source 60 is activated for evaporation. A first baffle 21 in the baffle assembly 20 is correspondingly positioned with the evaporation source 60, so that the evaporation material is formed on the corresponding crystal oscillator 10 through the first opening K1. Figure 6 As shown;

[0067] S120: The baffle detection component 40 detects whether the surface material adhesion thickness of the first baffle 21 is greater than or equal to a first preset value, and / or detects whether the aperture ratio of the first opening K1 of the first baffle 21 corresponding to the evaporation source 60 is less than or equal to a second preset value. If the surface material adhesion thickness is greater than or equal to the first preset value, or the aperture ratio of the first opening K1 of the first baffle 21 corresponding to the evaporation source 60 is less than or equal to the second preset value, the evaporation source 60 stops evaporation, and the control component 50 controls the switching component 30 to drive the first baffle 21 to move relative to the crystal oscillator 10, so as to switch the other first baffle 21 and the evaporation source 60 to be set accordingly. Figure 7 As shown;

[0068] S130: Restart the vapor deposition source 60 to perform vapor deposition.

[0069] In the vapor deposition method of this invention embodiment, when the vapor deposition source 60 is started for vapor deposition, the switching component 30 can be used to make a first baffle 21 in the baffle assembly 20 corresponding to the vapor deposition source 60, so that the vapor deposition material is formed on the corresponding crystal oscillator 10 through the first opening K1. Then, during the vapor deposition process, the baffle detection component 40 monitors in real time whether the material adhesion thickness on the surface of the first baffle 21 and / or the opening ratio of the first opening K1 exceeds a threshold. If it exceeds the threshold, the control component 50 controls the switching component 30 to drive the first baffle 21 relative to the crystal oscillator 10. The first baffle 21 is moved to block the crystal oscillator 10 by different baffles 21, thereby switching the first baffle 21. This avoids the gradual decrease in the opening ratio of the first opening K1 position of the first baffle 21 due to the increase in evaporation time, which would result in an excessively thick evaporated film and affect the optical performance and viewing angle of the product. This improves the evaporation yield. At the same time, the automatic switching of the first baffle 21 by the switching component 30 can avoid the abnormal evaporated film thickness caused by over-adjustment and under-adjustment due to the TF parameter compensation mechanism, as well as the large difference in the angle of the baffle component 20 installed by the personnel.

[0070] In step S110, the baffle assembly 20 includes a plurality of first baffles 21. During the vapor deposition detection, one first baffle 21 is controlled to be positioned relative to the crystal oscillator 10. That is, the first baffle 21 will block part of the crystal oscillator 10 and expose one or more crystal oscillators 10 through the first opening K1. The vapor deposition source 60 can be a line source.

[0071] In step S120, after a certain period of vapor deposition, the vapor deposition material will be deposited on the surface of the corresponding first baffle 21, causing the first opening K1 to be covered by the vapor deposition material, which in turn causes the first opening K1 to shrink and the opening ratio to decrease. After the baffle detection component 40 monitors that the material adhesion thickness on the surface of the first baffle 21 and / or the opening ratio of the first opening K1 exceeds the threshold, the first baffle 21 in the baffle assembly 20 can be moved by the switching component 30 to remove the first baffle 21 that does not meet the requirements, and set the other first baffle 21 that meets the requirements and the crystal oscillator 10 relative to each other.

[0072] In step S130, after the switching is completed, the vapor deposition process continues.

[0073] In some optional embodiments, the step of detecting whether the surface material adhesion thickness of the first baffle 21 is greater than or equal to a first preset value by the baffle detection component 40, and / or detecting whether the aperture ratio of the first opening K1 of the first baffle 21 corresponding to the evaporation source 60 is less than or equal to a second preset value, if the surface material adhesion thickness is greater than or equal to the first preset value, or the aperture ratio of the first opening K1 of the first baffle 21 corresponding to the evaporation source 60 is less than or equal to the second preset value, then the evaporation source 60 stops evaporation, and the control component 50 controls the switching component 30 to drive the first baffle 21 to move relative to the crystal oscillator 10 to switch another first baffle 21 corresponding to the evaporation source 60, includes:

[0074] The baffle detection component 40 detects whether the surface material adhesion thickness of the first baffle 21 is greater than or equal to a first preset value, and / or detects whether the opening ratio of the first opening K1 of the first baffle 21 corresponding to the vapor deposition source 60 is less than or equal to a second preset value. If the surface material adhesion thickness is greater than or equal to the first preset value, or the opening ratio of the first opening K1 of the first baffle 21 corresponding to the vapor deposition source 60 is less than or equal to the second preset value, the vapor deposition source 60 stops vapor deposition, and the control component 50 controls the drive component 32 in the switching component 30 to drive the rotating stage 31 to rotate, so as to drive the first baffle 21 located on the rotating stage 31 to rotate together, and switch the other first baffle 21 to be set with the vapor deposition source 60.

[0075] In this embodiment, the rotating stage 31 can rotate under the drive of the drive member 32, so as to drive the first baffle 21 located on the rotating stage 31 to rotate together, so that the relative position of each first baffle 21 and the crystal oscillator 10 changes, thereby enabling different first baffles 21 to block the crystal oscillator 10.

[0076] Optionally, the rotating platform 31 may include a frustum structure, and the first baffle 21 may be disposed on the surface of the frustum structure and evenly arranged around the center line of the frustum, so as to facilitate precise adjustment and control of the position of the first baffle 21.

[0077] Of course, the rotating stage 31 can also be selected with other structural shapes, such as an elliptical cylindrical structure.

[0078] Optionally, the drive unit 32 may include a stepper motor or a servo motor, as long as it can drive the rotating stage 31 and is convenient for rotation speed and angle.

[0079] Optionally, the switching component 30 is configured to be manually controllable for easy maintenance and debugging.

[0080] This invention also provides a display panel, which is prepared using the vapor deposition equipment described in any of the above embodiments.

[0081] Optionally, the vapor deposition equipment provided in this embodiment of the invention can be used to prepare film layers such as substrate, light-emitting functional layer, and encapsulation layer in a display panel.

[0082] Optionally, the substrate may include a substrate and an array layer, the array layer including a driving circuit. For example, the array layer may include a first conductive layer, a second conductive layer, and a third conductive layer disposed on one side of the substrate and stacked thereon. An insulating layer is disposed between adjacent conductive film layers. Exemplarily, the pixel driving circuit disposed on the array layer includes a transistor and a storage capacitor. The transistor includes an active layer, a gate, a source, and a drain. The materials of the source and gate may include one or more combinations of molybdenum, titanium, aluminum, copper, etc. The gate of the transistor is typically used to receive a control signal, causing the transistor to turn on or off under the control of the control signal. One of the source and drain of the thin-film transistor is connected to the light-emitting unit to control the normal light emission of the light-emitting unit.

[0083] The storage capacitor includes a first plate and a second plate. As an example, the gate and the first plate can be located in a first conductive layer, the second plate can be located in a second conductive layer, and the source and drain can be located in a third conductive layer.

[0084] Optionally, the display panel also includes a light-emitting functional layer and an encapsulation layer disposed on the side of the array layer away from the substrate, wherein at least one film layer in the light-emitting functional layer and the encapsulation layer can be formed using IJP (Inkjet printing) technology.

[0085] Optionally, the light-emitting functional layer includes a first electrode layer, a light-emitting layer, and a second electrode layer stacked along the direction away from the substrate.

[0086] Optionally, the light-emitting layer includes one or more of the following: an electron injection layer, an electron transport layer, a light-emitting material layer, a hole blocking layer, an electron blocking layer, a hole transport layer, and a hole injection layer. The specific selection depends on the type of light-emitting layer and is not particularly limited. The electron injection layer, electron transport layer, and hole blocking layer can be disposed between the second electrode layer and the light-emitting material layer. The electron blocking layer, hole transport layer, and hole injection layer can be disposed between the first electrode layer and the light-emitting material layer.

[0087] The material of the first electrode layer is generally a material with a high work function to improve hole injection efficiency. It can be gold (Au), platinum (Pt), titanium (Ti), silver (Ag), indium tin oxide (ITO), zinc tin oxide (IZO), or a transparent conductive polymer (such as polyaniline). For example, the first electrode layer can be made of an ITO-Ag-ITO composite material, without any particular limitation.

[0088] The material of the second electrode layer can be one of the following metals: silver (Ag), aluminum (Al), lithium (Li), magnesium (Mg), ytterbium (Yb), calcium (Ca), or indium (In). It can also be an alloy of the aforementioned metals, such as magnesium-silver alloy (Mg / Ag) or lithium-aluminum alloy (Li / Al). This embodiment does not limit the material in this regard.

[0089] Optionally, the encapsulation layer includes a first encapsulation layer, the material of which includes an inorganic material.

[0090] Optionally, the encapsulation layer also includes a second encapsulation layer located on the side of the first encapsulation layer facing away from the substrate. The material of the second encapsulation layer includes an organic material. The organic material can be made of resin or polymeric organic material, and can be formed using IJP (Inkjet printing) technology.

[0091] Optionally, the encapsulation layer may also include a third encapsulation layer located on the side of the second encapsulation layer away from the substrate. The material of the third encapsulation layer includes inorganic materials. Adding an inorganic encapsulation layer outside the organic encapsulation layer can further improve the encapsulation effect of the encapsulation layer. In this embodiment, the material of the third encapsulation layer may be the same as or different from the material of the first encapsulation layer, and there is no special limitation.

[0092] Optionally, the materials of the first encapsulation layer and the third encapsulation layer are the same, so that the first encapsulation layer and the third encapsulation layer can be manufactured using the same equipment, which can simplify the manufacturing process of the display panel.

[0093] The display panel provided in this embodiment of the invention has the technical effects of the vapor deposition rate monitoring device in any of the above embodiments. The explanations of the same or corresponding structures and terms as in the above embodiments will not be repeated here.

[0094] The display panel provided in the embodiments of the present invention can be an organic light-emitting diode (OLED) display panel, a quantum dot light-emitting diode (QLED) panel, or a micro flat panel display panel (Micro-OLED or Micro-LED), etc.

[0095] The display panel in this application embodiment includes, but is not limited to, devices with display functions such as mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, and control consoles.

[0096] The above are merely specific embodiments of this application. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, modules, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. It should be understood that the protection scope of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the protection scope of this application.

[0097] It should also be noted that the exemplary embodiments mentioned in this application describe methods or systems based on a series of steps or apparatus. However, this application is not limited to the order of the above steps; that is, the steps can be performed in the order mentioned in the embodiments, or in a different order, or several steps can be performed simultaneously.

Claims

1. A vapor deposition rate monitoring device for monitoring the vapor deposition rate of a vapor deposition equipment, characterized in that, The evaporation rate monitoring device includes: Multiple crystal oscillators; A baffle assembly is disposed opposite to the crystal oscillator. The baffle assembly includes a plurality of spaced first baffles. Each first baffle includes a shielding portion and a first opening. The first opening can expose at least one of the crystal oscillator. The opening areas of the first openings of different first baffles are the same. A switching component, connected to the baffle assembly, and configured to drive the first baffle to move relative to the crystal oscillator, so that different first baffles block the crystal oscillator; A baffle detection component, disposed opposite to the baffle component, is used to detect the thickness of the material adhesion on the surface of the first baffle, and / or the opening ratio of the first opening of the first baffle; The control component is connected to the switching component and the baffle detection component respectively to control the switching of the first baffle.

2. The vapor deposition rate monitoring device according to claim 1, characterized in that, The switching component includes a rotating platform and a driving member connected to the rotating platform. The baffle assembly is disposed on the rotating platform, and the driving member drives the rotating platform to rotate together with the first baffle located on the rotating platform. Preferably, the driving component includes a stepper motor or a servo motor; Preferably, the switching component is configured to be manually controllable.

3. The vapor deposition rate monitoring device according to claim 2, characterized in that, The switching component further includes a position detection mechanism, which is used to detect the position of the first baffle. Preferably, the position detection mechanism includes a photoelectric sensor.

4. The vapor deposition rate monitoring device according to claim 2, characterized in that, The baffle detection assembly includes a material thickness detection sensor configured to detect the thickness of the material adhesion on the surface of the first baffle in real time; and / or The baffle detection assembly includes an aperture ratio detection sensor, which is configured to detect the aperture ratio of the first opening of the first baffle in real time. Preferably, the material thickness detection sensor includes a laser rangefinder; Preferably, the material thickness detection sensor includes an optical sensor.

5. The vapor deposition rate monitoring device according to claim 2, characterized in that, The first baffle is circular, and the first opening is fan-shaped; Preferably, the first baffle is provided with at least two first openings; Preferably, the first baffle is provided with two first openings, and the extension lines of the center lines of the two first openings are located on the same straight line.

6. The vapor deposition rate monitoring device according to claim 2, characterized in that, The vapor deposition rate monitoring device also includes a fault detection mechanism, which is configured to issue an alarm upon detecting an abnormality in the vapor deposition rate monitoring device.

7. A vapor deposition apparatus for preparing a display panel, characterized in that, It includes a vapor deposition source and a vapor deposition rate monitoring device according to any one of claims 1-6, wherein at least one first opening of a first plate in the vapor deposition rate monitoring device faces the vapor deposition source.

8. A vapor deposition method, wherein the vapor deposition is performed using the vapor deposition equipment described in claim 7, characterized in that, Includes the following steps: The vapor deposition source is activated to perform vapor deposition. One of the first baffles in the baffle assembly is correspondingly set with the vapor deposition source so that the vapor deposition material is formed on the corresponding crystal oscillator through the first opening. The baffle detection component detects whether the surface material adhesion thickness of the first baffle is greater than or equal to a first preset value, and / or detects whether the opening ratio of the first opening of the first baffle corresponding to the evaporation source is less than or equal to a second preset value. If the surface material adhesion thickness is greater than or equal to the first preset value, or the opening ratio of the first opening of the first baffle corresponding to the evaporation source is less than or equal to the second preset value, then the evaporation source stops evaporation, and the control component controls the switching component to drive the first baffle to move relative to the crystal oscillator to switch another first baffle to be corresponding to the evaporation source. Restart the vapor deposition source to perform vapor deposition.

9. The vapor deposition method according to claim 8, characterized in that, The step of detecting whether the surface material adhesion thickness of the first baffle is greater than or equal to a first preset value by the baffle detection component, and / or detecting whether the aperture ratio of the first opening of the first baffle corresponding to the evaporation source is less than or equal to a second preset value, and if the surface material adhesion thickness is greater than or equal to the first preset value, or the aperture ratio of the first opening of the first baffle corresponding to the evaporation source is less than or equal to the second preset value, then the evaporation source stops evaporation, and the control component controls the switching component to drive the first baffle to move relative to the crystal oscillator to switch another first baffle corresponding to the evaporation source, includes: The baffle detection component detects whether the surface material adhesion thickness of the first baffle is greater than or equal to a first preset value, and / or detects whether the opening ratio of the first opening of the first baffle corresponding to the vapor deposition source is less than or equal to a second preset value. If the surface material adhesion thickness is greater than or equal to the first preset value, or the opening ratio of the first opening of the first baffle corresponding to the vapor deposition source is less than or equal to the second preset value, then the vapor deposition source stops vapor deposition, and the control component controls the drive component in the switching component to drive the rotating stage to rotate, so as to drive the first baffle located on the rotating stage to rotate together, and switch another first baffle to be corresponding to the vapor deposition source.

10. A display panel, characterized in that, It is prepared using the vapor deposition equipment described in claim 7.

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