Evaporation method, system and storage medium of an evaporation apparatus

Abstract

This disclosure relates to a vapor deposition method, system, and storage medium for a vapor deposition apparatus. The vapor deposition method includes: obtaining an initial film thickness of a substrate; determining a first vapor deposition region and a second vapor deposition region of the substrate based on the initial film thickness; wherein the initial film thickness of the first vapor deposition region is less than the initial film thickness of the second vapor deposition region; when a vapor deposition source moves to the first vapor deposition region, controlling a moving component to move the vapor deposition source at a first moving speed; and when the vapor deposition source moves to the second vapor deposition region, controlling the moving component to move the vapor deposition source at a second moving speed; wherein the first moving speed is less than the second moving speed. Because the film deposited in the first vapor deposition region is thicker than that in the second vapor deposition region, and the initial film thickness of the first vapor deposition region is less than that of the second vapor deposition region, the film thicknesses of the first and second vapor deposition regions are essentially the same after vapor deposition, thereby improving the optical uniformity and reducing the dispersion of the product.

Description

Technical Field

[0001] This disclosure relates to the field of vapor deposition technology, and in particular to a vapor deposition method, system and storage medium for vapor deposition equipment. Background Technology

[0002] After the substrate is fabricated, the film thickness varies due to the manufacturing process, specifically exhibiting a thicker center and thinner edges for the indium tin oxide (ITO) film. If the evaporation equipment uses a fixed-rate moving evaporation source to uniformly deposit the material onto the substrate surface, the resulting substrate will also exhibit this thick-center-thin-edge pattern. This leads to inconsistent film thickness at different locations, resulting in poor optical uniformity and high dispersion in the product. Therefore, reducing the thickness difference of the film deposited at different locations on the substrate is a crucial technical problem that needs to be solved by those skilled in the art. Summary of the Invention

[0003] To solve the above-mentioned technical problems, or at least partially solve them, this disclosure provides a vapor deposition method, system, and storage medium for vapor deposition equipment, which reduces the difference in film thickness after vapor deposition at different locations on the substrate, thereby improving the optical uniformity and reducing the dispersion of the product.

[0004] This disclosure provides a vapor deposition method for a vapor deposition apparatus, the vapor deposition apparatus including a moving component, a speed detection module, and a vapor deposition source; the moving component is used to move the vapor deposition source, and the speed detection module is used to detect the moving speed of the moving component;

[0005] Vapor deposition methods include:

[0006] Obtain the initial film thickness of the substrate; wherein, the initial film thickness is the film thickness of the substrate before vapor deposition;

[0007] Based on the initial film thickness, the first vapor deposition region and the second vapor deposition region of the substrate are determined; the initial film thickness of the first vapor deposition region is less than the initial film thickness of the second vapor deposition region.

[0008] When the vapor deposition source moves to the first vapor deposition area, the control moving component moves the vapor deposition source at a first moving speed;

[0009] When the vapor deposition source moves to the second vapor deposition area, the moving component is controlled to move the vapor deposition source at a second moving speed; wherein the first moving speed is less than the second moving speed.

[0010] Optionally, after the vapor deposition source is moved to the first vapor deposition area, and the moving component is controlled to move the vapor deposition source at a first moving speed, the vapor deposition method further includes:

[0011] Obtain a first difference between the standard film thickness and the film thickness of the already deposited area in the first evaporation region; wherein, the standard film thickness is the film thickness after the substrate is deposited;

[0012] Based on the first difference being within the first difference threshold range, the moving component is controlled to maintain a first moving rate to move the vapor deposition source.

[0013] Alternatively, the vapor deposition method may also include:

[0014] Based on the minimum value of the first difference being less than the first difference threshold range, the moving component is controlled to increase its moving speed based on the first moving speed.

[0015] Based on the first difference being greater than the maximum value within the first difference threshold range, the moving component is controlled to reduce its moving speed based on the first moving speed.

[0016] Optionally, the vapor deposition method further includes: controlling the moving component to stop adjusting the first moving rate based on the rate change value of the first moving rate being greater than the rate change threshold.

[0017] Optionally, when the vapor deposition source moves to the second vapor deposition area, after controlling the moving component to move the vapor deposition source at a second moving speed, the vapor deposition method includes:

[0018] Obtain the second difference between the standard film thickness and the film thickness of the already deposited area in the second evaporation region;

[0019] Based on the fact that the second difference is within the second difference threshold range, the moving component is controlled to maintain the second moving rate to move the evaporation source.

[0020] Alternatively, the vapor deposition method may also include:

[0021] Based on the minimum value of the second difference being less than the second difference threshold range, the moving component is controlled to increase the moving speed on the basis of using the second moving speed;

[0022] Based on the maximum value of the second difference being greater than the second difference threshold range, the moving component is controlled to reduce the moving rate while using the second moving rate.

[0023] Optionally, if the rate change value of the second moving rate is greater than the rate change threshold, the moving component is controlled to stop adjusting the second moving rate.

[0024] Optionally, after determining the first and second evaporation regions of the substrate based on the initial film thickness, the evaporation method further includes:

[0025] Obtain the third difference between the standard film thickness and the initial film thickness at the current position of the evaporation source;

[0026] If the third difference is greater than the third difference threshold, the current position of the vapor deposition source is determined as the first vapor deposition area of ​​the substrate;

[0027] If the third difference is less than the third difference threshold, the current position of the vapor deposition source is determined as the second vapor deposition area of ​​the substrate.

[0028] This disclosure also provides a vapor deposition system for a vapor deposition apparatus, used to implement the steps of the vapor deposition method of any vapor deposition apparatus as described above, the vapor deposition system comprising:

[0029] An initial film thickness acquisition module is used to acquire the initial film thickness of the substrate; wherein, the initial film thickness is the film thickness of the substrate before vapor deposition;

[0030] The vapor deposition area determination module is used to determine a first vapor deposition area and a second vapor deposition area of ​​the substrate based on the initial film thickness; the initial film thickness of the first vapor deposition area is less than the initial film thickness of the second vapor deposition area.

[0031] The first moving component control module is used to control the moving component to move the evaporation source at a first moving speed when the evaporation source moves to the first evaporation area.

[0032] The second moving component control module is used to control the moving component to move the evaporation source at a second moving speed when the evaporation source moves to the second evaporation area; wherein the first moving speed is less than the second moving speed.

[0033] This disclosure also provides a computer storage medium having a computer program stored thereon, which, when executed, implements the steps of the vapor deposition method of any vapor deposition apparatus as described above.

[0034] This disclosure provides a vapor deposition method, system, and storage medium for a vapor deposition apparatus. The vapor deposition apparatus includes a moving component, a speed detection module, and a vapor deposition source. The moving component moves the vapor deposition source, and the speed detection module detects the moving speed of the moving component. During the vapor deposition process on the substrate, the initial film thickness at each location on the substrate before vapor deposition is first obtained. Based on the initial film thickness, a first vapor deposition region and a second vapor deposition region are determined. The initial film thickness of the first vapor deposition region is less than that of the second vapor deposition region. Therefore, when the vapor deposition source moves to the first vapor deposition region, the moving component moves the vapor deposition source at a slower first moving speed, resulting in a thicker vapor deposition film in the first vapor deposition region. Conversely, when the vapor deposition source moves to the second vapor deposition region, the moving component moves the vapor deposition source at a faster second moving speed, resulting in a thinner vapor deposition film in the second vapor deposition region. This results in a film thickness greater than that of the substrate after evaporation in the first evaporation region than that in the second evaporation region, and a smaller initial film thickness in the first evaporation region than in the second evaporation region. Therefore, after evaporation, the film thicknesses of the first and second evaporation regions are essentially the same, thereby improving the optical uniformity and reducing the dispersion of the product. Attached Figure Description

[0035] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 This is a partial cross-sectional schematic diagram of a substrate in the prior art.

[0037] Figure 2 This is a schematic diagram of the structure of a vapor deposition apparatus provided in an embodiment of this disclosure.

[0038] Figure 3 This is a schematic flowchart of a vapor deposition method using a vapor deposition apparatus provided in an embodiment of this disclosure.

[0039] Figure 4 This is a partial cross-sectional schematic diagram of a substrate provided in an embodiment of this disclosure.

[0040] Figure 5 This is a schematic diagram of the structure of a vapor deposition system of a vapor deposition apparatus provided in an embodiment of this disclosure.

[0041] Figure 6 This is a schematic diagram of the hardware structure of a vapor deposition apparatus provided in an embodiment of the present disclosure. Detailed Implementation

[0042] The features and exemplary embodiments of various aspects of this application will now be described in detail. Numerous specific details are set forth in the following detailed description in order to provide a comprehensive understanding of this application. However, it will be apparent to those skilled in the art that this application can be implemented without some of these specific details. The following description of embodiments is merely intended to provide a better understanding of this application by illustrating examples thereof.

[0043] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The embodiments will now be described in detail with reference to the accompanying drawings.

[0044] Figure 1 This is a partial cross-sectional schematic diagram of a substrate in the prior art, such as... Figure 1 As shown, after the substrate is fabricated, the film thickness on the substrate will vary due to the manufacturing process. Specifically, the ITO anode film is thicker in the middle and thinner at the edges. If the evaporation equipment moves the evaporation source at a fixed rate to deposit the material evenly on the substrate surface, the substrate will also exhibit the same thick-in-the-middle and thin-at-the-edge pattern. This will result in different film thicknesses at different locations on the substrate after evaporation, leading to problems such as poor optical uniformity and large dispersion in the product.

[0045] To address the aforementioned issues, this disclosure provides a vapor deposition method, system, and storage medium for vapor deposition equipment, which reduces the difference in film thickness at different locations on the substrate, thereby improving the optical uniformity and reducing the dispersion of the product.

[0046] Figure 2 This is a schematic diagram of the structure of a vapor deposition apparatus provided in an embodiment of the present disclosure, as shown below. Figure 2 As shown, the vapor deposition equipment includes a moving component 10, a speed detection module, and a vapor deposition source 30. The vapor deposition source 30 is used to vapor deposit onto the substrate 40. The moving component 10 is connected to the vapor deposition source 30 and is used to move the vapor deposition source 30. The moving component 10 can be, for example, a robotic arm. The speed detection module includes multiple speed detection units 21, each disposed on one side of the moving trajectory of the vapor deposition source 30, so that each speed detection unit 21 can detect the moving speed of the moving component 10 when moving the vapor deposition source 30. The moving component 10 is also provided with an anti-shake unit, which can make the change in the moving speed of the moving component 10 more stable when adjusting the moving speed, thereby avoiding sudden large differences in the moving speed, and thus avoiding the problem of large differences in the thickness of the vapor-deposited film due to sudden large changes in the moving speed during the vapor deposition process.

[0047] Figure 3This is a schematic flowchart of a vapor deposition method using a vapor deposition apparatus provided in an embodiment of this disclosure, as shown below. Figure 3 As shown, the vapor deposition methods include: S110-S140.

[0048] S110. Obtain the initial film thickness of the substrate.

[0049] The initial film thickness is the film thickness of the substrate before evaporation.

[0050] Specifically, the substrate includes multiple arrays of ITO anodes. Due to the manufacturing process, each ITO anode is thicker in the middle and thinner at the edges. By obtaining the initial film thickness of the substrate before evaporation, the thickness of the evaporated film is allocated according to the initial film thickness, thus ensuring that the film thickness after evaporation is basically consistent.

[0051] S120. Based on the initial film thickness, determine the first vapor deposition area and the second vapor deposition area of ​​the substrate.

[0052] The initial film thickness of the first vapor deposition region is less than that of the second vapor deposition region.

[0053] Specifically, based on the initial film thickness of the substrate, the thinner area to be deposited on the substrate is designated as the first deposition area, and the thicker area to be deposited on the substrate is designated as the second deposition area. Therefore, in order to ensure that the film thickness after deposition on the substrate is basically consistent, the thinner first deposition area requires a thicker film to be deposited during deposition, and the thicker second deposition area requires a thinner film to be deposited during deposition.

[0054] S130. When the vapor deposition source moves to the first vapor deposition area, the moving component is controlled to move the vapor deposition source at a first moving speed.

[0055] S140. When the vapor deposition source moves to the second vapor deposition area, the moving component is controlled to move the vapor deposition source at a second moving speed.

[0056] The first moving speed is less than the second moving speed.

[0057] Specifically, during the vapor deposition process on the substrate, the longer the vapor deposition source stays in a certain area, the thicker the vapor-deposited film layer; conversely, the shorter the stay, the thinner the film layer. Therefore, when the vapor deposition source moves to the first vapor deposition area, the moving component uses a slower first moving speed to extend its stay within that area, resulting in a thicker film layer. Conversely, when the vapor deposition source moves to the second vapor deposition area, the moving component uses a faster second moving speed to shorten its stay, resulting in a thinner film layer. Thus, this disclosure achieves a more uniform film layer thickness on the substrate after the final vapor deposition process by depositing a thicker film layer in the first vapor deposition area (where the initial film layer thickness is thinner) and a thinner film layer in the second vapor deposition area (where the initial film layer thickness is thicker).

[0058] In the vapor deposition process of the substrate, this disclosure first obtains the initial film thickness at each location on the substrate before vapor deposition, and determines the first vapor deposition region and the second vapor deposition region based on the initial film thickness. The initial film thickness of the first vapor deposition region is smaller than that of the second vapor deposition region. Therefore, when the vapor deposition source moves to the first vapor deposition region, the moving component moves the vapor deposition source at a slower first moving speed, resulting in a thicker vapor deposition film in the first vapor deposition region. Conversely, when the vapor deposition source moves to the second vapor deposition region, the moving component moves the vapor deposition source at a faster second moving speed, resulting in a thinner vapor deposition film in the second vapor deposition region. Therefore, by moving the evaporation source at a corresponding moving speed when the substrate has different film thicknesses, this disclosure makes the film thickness of the substrate after evaporation in the first evaporation area greater than the film thickness after evaporation in the second evaporation area, and the initial film thickness of the first evaporation area is less than the initial film thickness of the second evaporation area. Thus, after the evaporation is completed, the film thicknesses of the first and second evaporation areas are basically the same, thereby improving the optical uniformity of the product and reducing its dispersion.

[0059] In some embodiments, after the vapor deposition source is moved to the first vapor deposition area, the vapor deposition method further includes, after controlling the moving component to move the vapor deposition source at a first moving speed:

[0060] Obtain the first difference between the standard film thickness and the film thickness of the already deposited area in the first evaporation region.

[0061] The standard film thickness is the film thickness after the substrate is vapor-deposited.

[0062] Specifically, after the substrate completes the vapor deposition process, the film thickness is used as a standard film thickness for reference. The film thickness of the already vaporized areas in the first vapor deposition region of the substrate is acquired in real time. A first difference value is obtained by calculating the difference between the standard film thickness and the film thickness of the already vaporized areas in the first vapor deposition region. The first difference value reflects the distance between the film thickness of the already vaporized areas in the first vapor deposition region and the standard film thickness. When the first difference value is large, it is considered that the film thickness of the already vaporized areas in the first vapor deposition region is still much smaller than the standard film thickness, so the moving speed of the vapor deposition source can be appropriately reduced. When the first difference value is small, it is considered that the film thickness of the already vaporized areas in the first vapor deposition region is close to the standard film thickness, and the original moving speed can be maintained. If the first difference value is negative, it is considered that the film thickness of the already vaporized areas in the first vapor deposition region has exceeded the standard film thickness, so the moving speed of the vapor deposition source needs to be increased to prevent the film thickness of the undeposited areas in the first vapor deposition region from continuing to exceed the standard film thickness.

[0063] Based on the first difference being within the first difference threshold range, the moving component is controlled to maintain a first moving rate to move the vapor deposition source.

[0064] For example, during the vapor deposition process, the film thickness of the area in the first vapor deposition region of the substrate that has been vapor deposited is detected in real time, and a first difference between the standard film thickness and the film thickness of the vapor deposited area in the first vapor deposition region is calculated.

[0065] The first difference threshold range can be, for example, a range greater than -0.5 and less than 0.5. When the first difference is within the first difference threshold range, the film thickness of the substrate after evaporation in the first evaporation area can be considered to meet the basic requirements. By comparing the first difference with the first difference threshold range, when the first difference is within the first difference threshold range, i.e., the first difference is greater than -0.5 and less than 0.5, it is considered that the moving component, by moving the evaporation source at the first moving speed, can ensure that the substrate maintains the same film thickness in the first evaporation area, and that this film thickness is consistent with the film thickness after evaporation in the second evaporation area. Therefore, after evaporation, the film thickness of the substrate in the first and second evaporation areas is basically consistent, thereby improving the optical uniformity of the product and reducing its dispersion.

[0066] Based on the minimum value of the first difference being less than the first difference threshold range, the moving component is controlled to increase its moving speed based on the first moving speed.

[0067] For example, when the first difference is less than the minimum value of the first difference threshold range, that is, when the first difference is less than -0.5, it is considered that the moving component moves the evaporation source at the first moving speed, so that the film thickness of the substrate after evaporation in the first evaporation area is thicker than the standard film thickness. Therefore, it is necessary to control the moving component to increase the moving speed on the basis of the first moving speed, so that the evaporation source stays in the first evaporation area for a shorter time, thereby reducing the film thickness in the first evaporation area on the original basis.

[0068] Based on the first difference being greater than the maximum value within the first difference threshold range, the moving component is controlled to reduce its moving speed based on the first moving speed.

[0069] For example, when the first difference is greater than the maximum value of the first difference threshold range, that is, when the first difference is greater than 0.5, it is considered that the moving component moves the evaporation source at the first moving speed, so that the film thickness of the substrate after evaporation in the first evaporation area is thinner than the standard film thickness. Therefore, it is necessary to control the moving component to reduce the moving speed based on the first moving speed, so that the evaporation source stays in the first evaporation area for a longer time, thereby increasing the film thickness in the first evaporation area on the original basis.

[0070] It should be noted that the first difference threshold range is greater than -0.5. The range of less than 0.5 is only an example. The specific range of the first difference threshold needs to be set according to actual needs, and no specific limit is made here.

[0071] In some embodiments, the vapor deposition method further includes: controlling the moving component to stop adjusting the first moving rate based on a rate change value greater than a rate change threshold.

[0072] For example, when the first difference is less than the minimum value of the first difference threshold range, the first moving speed of the moving component needs to be increased; or when the first difference is greater than the maximum value of the first difference threshold range, the first moving speed of the moving component needs to be decreased. The first moving speed of the moving component needs to increase gradually during the increase or decrease process, and cannot be a sudden increase or a large change. For example, if the first moving speed suddenly changes by a large value during the increase or decrease process, it will cause a large bulge or pit to appear on the substrate after the first moving speed adjustment, which will lead to inconsistent film thickness after substrate evaporation. Therefore, this disclosure sets a rate change threshold, for example, ±0.5%, and compares the rate change value of the first moving speed with the rate change threshold. When the rate change value of the increase in the first moving speed is greater than 0.5%, or the rate change value of the decrease in the first moving speed is less than -0.5%, the moving component is controlled to stop adjusting the first moving speed. This ensures that the film thickness of the substrate after evaporation in the first evaporation area is basically consistent, thereby improving the optical uniformity of the product and reducing dispersion.

[0073] It should be noted that the rate change threshold of ±0.5% is only an example. The specific rate change threshold needs to be set according to actual needs, and no specific limit is made here.

[0074] In some embodiments, after the vapor deposition source is moved to the second vapor deposition region, the vapor deposition method further includes, after controlling the moving component to move the vapor deposition source at a second moving speed:

[0075] Obtain the second difference between the standard film thickness and the film thickness of the already deposited area in the second evaporation region.

[0076] Specifically, after the substrate completes the vapor deposition process, the film thickness is used as a standard film thickness for reference. The film thickness of the already deposited areas in the second vapor deposition region of the substrate is acquired in real time. A second difference value is obtained by calculating the difference between the standard film thickness and the film thickness of the already deposited areas in the second vapor deposition region. This difference value reflects the distance between the film thickness of the already deposited areas in the second vapor deposition region and the standard film thickness. When the second difference value is large, it is considered that the film thickness of the already deposited areas in the second vapor deposition region is still significantly different from the standard film thickness, so the moving speed of the vapor deposition source can be appropriately reduced. When the second difference value is small, it is considered that the film thickness of the already deposited areas in the first vapor deposition region is close to the standard film thickness, and the original moving speed can be maintained. If the second difference value is negative, it is considered that the film thickness of the already deposited areas in the second vapor deposition region has exceeded the standard film thickness, so the moving speed of the vapor deposition source needs to be increased to prevent the film thickness of the undeposited areas in the second vapor deposition region from continuing to exceed the standard film thickness.

[0077] Based on the fact that the second difference is within the second difference threshold range, the moving component is controlled to maintain the second moving rate to move the evaporation source.

[0078] For example, during the vapor deposition process, the film thickness of the area in the second vapor deposition region of the substrate that has been vapor deposited is detected in real time, and a second difference between the standard film thickness and the film thickness of the vapor deposited area in the second vapor deposition region is calculated.

[0079] The second difference threshold range can be, for example, a range greater than -0.5 and less than 0.5. When the second difference is within the second difference threshold range, the film thickness of the substrate after evaporation in the second evaporation area can be considered to meet the basic requirements. By comparing the second difference with the second difference threshold range, when the second difference is within the second difference threshold range, i.e., the second difference is greater than -0.5 and less than 0.5, it is considered that the moving component, by moving the evaporation source at the second moving speed, can ensure that the substrate maintains the same film thickness in the second evaporation area, and that this film thickness is consistent with the film thickness after evaporation in the first evaporation area. Therefore, after evaporation, the film thickness of the substrate in the first and second evaporation areas is basically the same, thereby improving the optical uniformity of the product and reducing its dispersion.

[0080] Based on the minimum value of the second difference being less than the second difference threshold range, the moving component is controlled to increase the moving speed on the basis of using the second moving speed.

[0081] For example, when the second difference is less than the minimum value of the second difference threshold range, that is, when the second difference is less than -0.5, it is considered that the moving component moves the evaporation source at the second moving speed, so that the film thickness of the substrate after evaporation in the second evaporation area is thicker than the standard film thickness. Therefore, it is necessary to control the moving component to increase the moving speed based on the second moving speed, so that the evaporation source stays in the second evaporation area for a shorter time, thereby reducing the film thickness in the second evaporation area on the original basis.

[0082] Based on the maximum value of the second difference being greater than the second difference threshold range, the moving component is controlled to reduce the moving rate while using the second moving rate.

[0083] For example, when the second difference is greater than the maximum value of the second difference threshold range, that is, when the second difference is greater than 0.5, it is considered that the moving component moves the evaporation source at the second moving speed, so that the film thickness of the substrate after evaporation in the second evaporation area is thinner than the standard film thickness. Therefore, it is necessary to control the moving component to reduce the moving speed based on the second moving speed, so that the evaporation source stays in the second evaporation area for a longer time, thereby increasing the film thickness in the second evaporation area on the original basis.

[0084] It should be noted that the second difference threshold range is greater than -0.5. The range of less than 0.5 is only an example. The specific range of the second difference threshold needs to be set according to actual needs, and no specific limit is made here.

[0085] In some embodiments, the vapor deposition method further includes:

[0086] If the rate change value based on the movement rate is greater than the rate change threshold, the control of the movement component stops adjusting the second movement rate.

[0087] For example, when the second difference is less than the minimum value of the second difference threshold range, the second moving speed of the moving component needs to be increased; or when the second difference is greater than the maximum value of the second difference threshold range, the second moving speed of the moving component needs to be decreased. The second moving speed of the moving component needs to increase gradually during the increase or decrease process, and cannot be a sudden increase or a large change in value. For example, if the second moving speed suddenly changes by a large value during the increase or decrease process, it will cause a large bulge or pit to appear on the substrate at the position after the second moving speed adjustment, which will lead to inconsistent film thickness after substrate evaporation. Therefore, this disclosure sets a rate change threshold, for example, ±0.5%, and compares the rate change value of the second moving speed with the rate change threshold. When the rate change value of the increase in the second moving speed is greater than 0.5%, or the rate change value of the decrease in the second moving speed is less than -0.5%, the moving component is controlled to stop adjusting the second moving speed. This ensures that the film thickness of the substrate after evaporation in the second evaporation area is basically consistent, thereby improving the optical uniformity of the product and reducing dispersion.

[0088] It should be noted that the rate change threshold of ±0.5% is only an example. The specific rate change threshold needs to be set according to actual needs, and no specific limit is made here.

[0089] In some embodiments, after determining the first and second vapor deposition regions of the substrate based on the initial film thickness, the vapor deposition method further includes:

[0090] Obtain the third difference between the standard film thickness and the initial film thickness at the current position of the evaporation source.

[0091] For example, Figure 4 This is a partial cross-sectional schematic diagram of a substrate provided in an embodiment of the present disclosure, such as... Figure 4The substrate 40 has multiple anode ITOs arranged in an array. During the movement of the evaporation source, the initial film thickness at the current position of the evaporation source is acquired in real time, and a third difference between the standard film thickness and the initial film thickness at the current position of the evaporation source is calculated. This third difference reflects the distance between the initial film thickness and the standard film thickness at each position on the substrate. Because the anode ITO is thicker in the middle and thinner at the sides, the third difference when the evaporation source moves to the side regions of each anode ITO is greater than the third difference when the evaporation source moves to the middle region of each anode ITO. Furthermore, because the anode ITO is thicker in the middle and thinner at the sides, the movement speed of the evaporation source in the side regions of the anode ITO is slower than that in the middle region. Therefore, two evaporation regions can be set according to the thickness variation of the anode ITO, and the moving component can move the evaporation source at different speeds in these two evaporation regions.

[0092] If the third difference is greater than the third difference threshold, the current position of the vapor deposition source is determined as the first vapor deposition area of ​​the substrate.

[0093] Specifically, when the third difference between the standard film thickness and the initial film thickness at the current position of the vapor deposition source is greater than the third difference threshold, the vapor deposition source is determined to be in the first vapor deposition area of ​​the substrate. The first vapor deposition area is the area on both sides of the anode ITO. Therefore, when the moving component is required, the vapor deposition source uses a slower moving speed for vapor deposition.

[0094] If the third difference is less than the third difference threshold, the current position of the vapor deposition source is determined as the second vapor deposition area of ​​the substrate.

[0095] Specifically, when the third difference between the standard film thickness and the initial film thickness at the current position of the evaporation source is less than the third difference threshold, the evaporation source is determined to be in the second evaporation area of ​​the substrate. The second evaporation area is the middle area of ​​the anode ITO. Therefore, when the moving component is required, the evaporation source uses a faster moving rate for evaporation.

[0096] Figure 5 This is a schematic diagram of the structure of a vapor deposition system of a vapor deposition apparatus provided in an embodiment of this disclosure. The vapor deposition system of the vapor deposition apparatus is used to implement the steps of the vapor deposition method of the vapor deposition apparatus corresponding to any of the above embodiments, such as... Figure 5 As shown, the vapor deposition system includes: an initial film thickness acquisition module 210, a vapor deposition area determination module 220, a first moving component control module 230, and a second moving component control module 240.

[0097] The initial film thickness acquisition module 210 is used to acquire the initial film thickness of the substrate; wherein, the initial film thickness is the film thickness of the substrate before vapor deposition.

[0098] The vapor deposition area determination module 220 is used to determine a first vapor deposition area and a second vapor deposition area of ​​the substrate based on the initial film thickness; the initial film thickness of the first vapor deposition area is less than the initial film thickness of the second vapor deposition area.

[0099] The first moving component control module 230 is used to control the moving component to move the evaporation source at a first moving speed when the evaporation source moves to the first evaporation area.

[0100] The second moving component control module 240 is used to control the moving component to move the evaporation source at a second moving speed when the evaporation source moves to the second evaporation area; wherein the first moving speed is less than the second moving speed.

[0101] It is understood that the vapor deposition system of the vapor deposition equipment provided in this application embodiment can achieve the corresponding beneficial effects of the vapor deposition method of the vapor deposition equipment provided in the above embodiments, which will not be elaborated here.

[0102] Figure 6 This is a schematic diagram of the hardware structure of a vapor deposition apparatus provided in an embodiment of the present disclosure.

[0103] The vapor deposition apparatus may include a processor 301 and a memory 302 storing computer program instructions.

[0104] Specifically, the processor 301 may include a central processing unit (CPU), an application-specific integrated circuit (ASIC), or one or more integrated circuits that can be configured to implement the embodiments of this application.

[0105] Memory 302 may include a mass storage device for data or instructions. For example, and not limitingly, memory 302 may include a hard disk drive (HDD), a floppy disk drive, flash memory, optical disk, magneto-optical disk, magnetic tape, or a Universal Serial Bus (USB) drive, or a combination of two or more of these. Where suitable, memory 302 may include removable or non-removable (or fixed) media. Where suitable, memory 302 may be internal or external to the vapor deposition apparatus. In a particular embodiment, memory 302 is a non-volatile solid-state memory.

[0106] In certain embodiments, memory 302 may include read-only memory (ROM), random access memory (RAM), disk storage media device, optical storage media device, flash memory device, electrical, optical, or other physical / tangible memory storage device. Thus, generally, memory includes one or more tangible (non-transitory) computer-readable storage media (e.g., memory devices) encoded with software including computer-executable instructions, and when the software is executed (e.g., by one or more processors), it is operable to perform the operations described with reference to the method according to one aspect of this disclosure.

[0107] The processor 301 reads and executes computer program instructions stored in the memory 302 to implement the vapor deposition method of any of the vapor deposition apparatuses in the above embodiments.

[0108] In one example, the vapor deposition apparatus may also include a communication interface 303 and a bus 310. For example, Figure 6 As shown, the processor 301, memory 302, and communication interface 303 are connected through bus 310 and complete communication with each other.

[0109] The communication interface 303 is mainly used to realize communication between various modules, devices, units and / or equipment in the embodiments of this application.

[0110] Bus 310 includes hardware, software, or both, that couples components of the vapor deposition apparatus together. For example, and not limitingly, the bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), HyperTransport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an Infinite Bandwidth Interconnect, a Low Pin Count (LPC) bus, a memory bus, a Microchannel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local (VLB) bus, or other suitable buses, or combinations of two or more of these. Where appropriate, bus 310 may include one or more buses. Although specific buses are described and illustrated in embodiments of this application, any suitable bus or interconnect is contemplated herein.

[0111] Furthermore, in conjunction with the vapor deposition method of the vapor deposition equipment in the above embodiments, this application embodiment can provide a computer storage medium for implementation. The computer storage medium stores computer program instructions; when these computer program instructions are executed by a processor, they implement the vapor deposition method of any of the vapor deposition equipment in the above embodiments.

[0112] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

[0113] The above are merely specific embodiments of this disclosure, enabling those skilled in the art to understand or implement this disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not to be limited to these embodiments, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A vapor deposition method using vapor deposition equipment, characterized in that, The vapor deposition equipment includes a moving component, a speed detection module, and a vapor deposition source; the moving component is used to move the vapor deposition source, and the speed detection module is used to detect the moving speed of the moving component. The vapor deposition method includes: Obtain the initial film thickness of the substrate; wherein, the initial film thickness is the film thickness of the substrate before vapor deposition; Based on the initial film thickness, a first evaporation region and a second evaporation region of the substrate are determined; the initial film thickness of the first evaporation region is less than the initial film thickness of the second evaporation region. When the vapor deposition source moves to the first vapor deposition area, the moving component is controlled to move the vapor deposition source at a first moving speed; When the vapor deposition source moves to the second vapor deposition area, the moving component is controlled to move the vapor deposition source at a second moving speed; wherein the first moving speed is less than the second moving speed.

2. The vapor deposition method according to claim 1, characterized in that, When the vapor deposition source moves to the first vapor deposition area, after controlling the moving component to move the vapor deposition source at a first moving speed, the vapor deposition method further includes: Obtain a first difference between the standard film thickness and the film thickness of the already deposited area in the first evaporation region; wherein, the standard film thickness is the film thickness after evaporation of the substrate; Based on the fact that the first difference is within the range of the first difference threshold, the moving component is controlled to maintain the first moving speed to move the vapor deposition source.

3. The vapor deposition method according to claim 2, characterized in that, The vapor deposition method further includes: Based on the minimum value of the first difference being less than the first difference threshold range, the moving component is controlled to increase its moving speed on the basis of the first moving speed; Based on the first difference being greater than the maximum value of the first difference threshold range, the moving component is controlled to reduce its moving speed based on the first moving speed.

4. The vapor deposition method according to claim 3, characterized in that, The vapor deposition method further includes: If the rate change value of the first moving rate is greater than the rate change threshold, the moving component is controlled to stop adjusting the first moving rate.

5. The vapor deposition method according to claim 1, characterized in that, After the vapor deposition source is moved to the second vapor deposition area, and the moving component is controlled to move the vapor deposition source at a second moving speed, the vapor deposition method further includes: Obtain a second difference between the standard film thickness and the film thickness of the already deposited area in the second evaporation region; Based on the fact that the second difference is within the range of the second difference threshold, the moving component is controlled to maintain the second moving speed to move the evaporation source.

6. The vapor deposition method according to claim 5, characterized in that, The vapor deposition method further includes: Based on the minimum value of the second difference being less than the second difference threshold range, the moving component is controlled to increase its moving speed while using the second moving speed. Based on the fact that the second difference is greater than the maximum value of the second difference threshold range, the moving component is controlled to reduce its moving speed while using the second moving speed.

7. The vapor deposition method according to claim 6, characterized in that, The vapor deposition method further includes: If the rate change value of the second movement rate is greater than the rate change threshold, the movement component is controlled to stop adjusting the second movement rate.

8. The vapor deposition method according to claim 1, characterized in that, After determining the first and second evaporation regions of the substrate based on the initial film thickness, the evaporation method further includes: Obtain the third difference between the standard film thickness and the initial film thickness at the current position of the evaporation source; If the third difference is greater than the third difference threshold, the current position of the vapor deposition source is determined to be the first vapor deposition area of ​​the substrate; If the third difference is less than the third difference threshold, the current position of the vapor deposition source is determined to be the second vapor deposition area of ​​the substrate.

9. A vapor deposition system for a vapor deposition apparatus, characterized in that, The vapor deposition system is used to implement the vapor deposition method of the vapor deposition apparatus as described in any one of claims 1-8, wherein the vapor deposition system comprises: An initial film thickness acquisition module is used to acquire the initial film thickness of a substrate; wherein, the initial film thickness is the film thickness of the substrate before vapor deposition; A vapor deposition area determination module is used to determine a first vapor deposition area and a second vapor deposition area of ​​the substrate based on the initial film thickness; the initial film thickness of the first vapor deposition area is less than the initial film thickness of the second vapor deposition area. The first moving component control module is used to control the moving component to move the evaporation source at a first moving speed when the evaporation source moves to the first evaporation area. The second moving component control module is used to control the moving component to move the evaporation source at a second moving speed when the evaporation source moves to the second evaporation area; wherein the first moving speed is less than the second moving speed.

10. A computer storage medium having a computer program stored thereon, characterized in that, When the computer program is executed, it implements the steps of the vapor deposition method of the vapor deposition apparatus as described in any one of claims 1-8.

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