Evaporation machine and semiconductor processing method

Abstract

This application provides a vapor deposition machine and a semiconductor processing method. The vapor deposition machine includes a frame, electrodes, multiple pads, a first detection unit, and a drive assembly. The electrodes are detachably mounted on the frame, and each electrode has a first surface at its end along a first direction for abutting and positioning a glass substrate. The pads are movably mounted on the frame along the first direction, with multiple pads spaced apart around the electrodes. Each pad has a second surface at its end along the first direction for abutting and positioning a photomask. The first detection unit is mounted on the frame and is used to obtain the actual distance between the second surface and the first surface of any pad along the first direction. The drive assembly is connected between the frame and the pads and is used to drive the pads to move relative to the frame, thereby adjusting the distance between the first and second surfaces along the first direction to a target distance. The vapor deposition machine provided by this application has the advantage of easy maintenance.

Description

Technical Field

[0001] This application belongs to the field of communication technology, and more specifically, relates to a vapor deposition machine and a semiconductor processing method. Background Technology

[0002] Vacuum evaporation deposition machines utilize the principle of vapor phase deposition. In a high vacuum environment, heating causes the deposition material to evaporate or sublimate into gaseous particles. These gaseous particles are rapidly transported from the evaporation source to the substrate surface under the influence of an electric field generated by electrodes. The gaseous particles adhere to the substrate surface, nucleate, and grow into a solid thin film. They are commonly used for coating substrates and other workpieces. However, evaporation deposition machines in this technology suffer from low maintenance efficiency. Summary of the Invention

[0003] The purpose of this application is to provide a vapor deposition machine and a semiconductor processing method to solve the technical problem of low maintenance efficiency in the existing vapor deposition machine.

[0004] In a first aspect, embodiments of this application provide a vapor deposition machine.

[0005] The vapor deposition machine provided in this application includes a frame; an electrode detachably disposed on the frame, the electrode having a first surface at its end along a first direction for abutting and positioning a glass substrate; a plurality of pads movably disposed on the frame along the first direction, the plurality of pads being spaced apart around the electrode, the pads having a second surface at their end along the first direction for abutting and positioning a photomask; a first detection unit disposed on the frame, the first detection unit being used to obtain the actual distance between the second surface of at least one pad and the first surface in the first direction; and a driving assembly connected between the frame and the pads, the driving assembly being used to drive the pads to move relative to the frame, so as to adjust the distance between the first surface and the second surface in the first direction to a target distance.

[0006] The beneficial effects of the vapor deposition machine provided in this application embodiment are as follows: Compared with the prior art, the vapor deposition machine provided in this application embodiment is equipped with a first detection unit and a driving component. The actual distance between the first surface and the second surface in the first direction is obtained through the first detection unit, and the distance between the first surface and the second surface in the first direction is adjusted to the target distance through the driving component, thereby improving the efficiency of pad adjustment. Furthermore, after the electrodes of the vapor deposition machine provided in this application embodiment are disassembled and maintained, the distance between the pad and the electrode can be quickly calibrated through the driving component and the first detection unit, making the vapor deposition machine provided in this application easy to maintain.

[0007] Optionally, the plurality of pads include a plurality of pad groups, the plurality of pad groups being arranged around the electrode, and the driving assembly including a plurality of driving elements, the driving elements being connected to the pad groups one-to-one.

[0008] Optionally, the drive unit includes an actuator and an encoder, the actuator being used to drive the pad block to move relative to the frame, and the encoder being connected to the drive unit to obtain the stroke of the actuator.

[0009] Optionally, the actuator includes a lead screw, a bracket, and a motor. The bracket is connected to a plurality of the pads in the corresponding pad group. The bracket is provided with a nut. The lead screw extends along a first direction and is threaded onto the nut. The motor drives the lead screw to rotate relative to the nut. The encoder is configured correspondingly to the motor to obtain the travel of the bracket in the first direction.

[0010] Optionally, the first detection unit is electrically connected to the drive assembly so that the drive assembly can obtain the actual distance between the first surface and the second surface obtained by the first detection unit, and the drive assembly adjusts the position of the pad relative to the frame according to the actual distance between the first surface and the second surface obtained by the first detection unit.

[0011] Optionally, the vapor deposition machine further includes:

[0012] A central control unit, electrically connected between the first detection unit and the drive assembly; and

[0013] An interactive unit is electrically connected to the hollow unit to input user commands to the central control unit.

[0014] Optionally, the vapor deposition machine further includes a second detection unit, which is disposed on the frame and electrically connected to the central control unit. The second detection unit is used to detect the thickness of the glass substrate in the first direction.

[0015] Secondly, embodiments of this application also provide a semiconductor processing method.

[0016] The semiconductor processing method provided in this application is based on the vapor deposition machine described in any of the above embodiments. The semiconductor processing method provided in this application includes:

[0017] Step S10: Obtain the target distance between the first surface and the second surface based on the thickness of the glass substrate mounted on the electrode;

[0018] Step S20: Obtain the actual distance between the first surface and the second surface based on the first detection unit;

[0019] Step S30: Based on the actual distance between the first surface and the second surface and the target distance between the first surface and the second surface, the target displacement of the plurality of pads is obtained;

[0020] Step S40: Based on the target displacement of the plurality of pads, drive the plurality of pads to move synchronously via the drive component.

[0021] It is understandable that the beneficial effects of the second aspect mentioned above can be found in the relevant descriptions in the first aspect mentioned above, and will not be repeated here.

[0022] Optionally, the semiconductor processing method further includes:

[0023] Step S50: Repeat step S30 until the distance between the first surface and the second surface is the target distance between the first surface and the second surface.

[0024] Optionally, step S10 includes:

[0025] The thickness of the glass substrate is obtained through the second detection unit;

[0026] The thickness of the glass substrate is input to the central control unit through the second detection unit, and the target gap size between the glass substrate and the second surface is input to the central control unit through the interaction unit.

[0027] The central control unit obtains the target distance between the first surface and the second surface by using the gap size between the glass substrate and the second surface and the thickness size of the glass substrate. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 A schematic diagram of the vapor deposition machine provided in the embodiments of this application. Figure 1 ;

[0030] Figure 2 A schematic diagram of the vapor deposition machine provided in the embodiments of this application. Figure 2 ;

[0031] Figure 3 for Figure 2 Schematic diagram of the cross section at point AA;

[0032] Figure 4 for Figure 2 Schematic diagram of the cross section at point BB;

[0033] Figure 5 A flowchart of a semiconductor processing method provided in an embodiment of this application.

[0034] The following are the labeling elements in the figure:

[0035] 100. Evaporation coating machine;

[0036] 10. Rack;

[0037] 20. Spacer block; 201. Spacer block assembly; 21. Second surface;

[0038] 30. Electrode; 31. First surface;

[0039] 40. Drive assembly; 41. Bracket; 42. Lead screw; 43. Motor;

[0040] 50. First detection unit;

[0041] 200. Mask template;

[0042] 300. Glass substrate. Detailed Implementation

[0043] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0044] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0045] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0046] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0047] This application provides an evaporation deposition machine and a semiconductor processing method based on the evaporation deposition machine. The evaporation deposition machine provided in this application is used to perform film deposition processing on a glass substrate. The evaporation deposition machine provided in this application has the advantage of high maintenance efficiency. The semiconductor processing method provided in this application is used to recalibrate the distance between the pad and the electrode after the electrode of the evaporation deposition machine is disassembled, maintained or replaced, so as to calibrate the gap thickness between the mask and the glass cover plate.

[0048] Please refer to the following: Figures 1 to 4 The vapor deposition machine 100 provided in the embodiments of this application will now be described.

[0049] It should be noted that the first direction in the following text is the z-direction shown in the figure, the second direction in the following text is the x-direction shown in the figure, and the third direction in the following text is the y-direction shown in the figure.

[0050] The vapor deposition machine 100 provided in this application embodiment includes a frame 10, electrodes 30, multiple pads 20, a first detection unit 50, and a drive assembly 40.

[0051] The electrode 30 is detachably mounted on the frame 10, and the end of the electrode 30 along the first direction z has a first surface 31 for abutting and positioning against the glass substrate 300.

[0052] like Figure 1 As shown, electrode 30 is disposed on the surface of frame 10 in the first direction z, and electrode 30 along... Figure 1 As shown, the xOy plane extends, and the end of electrode 30 in the first direction z has a first surface 31, the first surface 31 in Figure 1 The xOy plane shown extends so that the surface of the glass substrate 300 facing the electrode 30 in the first direction z can be grounded on the first surface 31, thereby restricting the translational freedom of the glass substrate 300 in the first direction z by the electrode 30 and positioning the glass substrate 300 in the first direction z.

[0053] In some embodiments, the electrode 30 is detachably mounted to the frame 10 by screws.

[0054] In other embodiments, the electrode 30 and the frame 10 are connected to the frame 10 by means of snap-fit ​​connection, adhesive bonding or other methods.

[0055] Electrode 30 is detachably mounted on frame 10 so that users can disassemble, maintain or replace electrode 30. After electrode 30 is disassembled, maintained or replaced, the position of electrode 30 relative to frame 10 changes slightly, that is, the position of first surface 31 relative to frame 10 changes.

[0056] The pad 20 is movably disposed on the frame 10 in the first direction z. The pad 20 and the electrode 30 are arranged at intervals in a direction orthogonal to the first direction z, and a plurality of pads 20 are arranged around the electrode 30. The end of the pad 20 in the first direction z has a second surface 21 for abutting and positioning against the mask template 200.

[0057] like Figure 1 As shown, in some embodiments, the pad 20 and the electrode 30 are disposed on the same surface of the frame 10 in the first direction z. The first surface 31 is located on the side of the electrode 30 away from the frame 10 in the first direction z, and the second surface 21 is located on the side of the pad 20 away from the frame 10 in the first direction z. Both the first surface 31 and the second surface 21 extend along the xOy plane, that is, the first surface 31 and the second surface 21 are parallel to each other.

[0058] There are multiple pads 20, and each pad 20 has one or more second surfaces 21.

[0059] In some embodiments, a single pad 20 is provided with a plurality of second surfaces 21, and the positions of the plurality of second surfaces 21 on the single pad 20 coincide with each other in the first direction z.

[0060] like Figure 1 and Figure 2 As shown, a portion of the plurality of pads 20 is disposed on one side of the electrode 30 in the second direction x and extends along the third direction y; a portion of the plurality of pads 20 is disposed on the other side of the electrode 30 in the second direction x and extends along the third direction y; a portion of the plurality of pads 20 is disposed on one side of the electrode 30 in the third direction y and extends along the second direction x; and a portion of the plurality of pads 20 is disposed on the other side of the electrode 30 in the third direction y and extends along the second direction x, thereby arranging the plurality of pads 20 around the electrode 30.

[0061] When the mask 200 abuts against the plurality of pads 20, both ends of the mask 200 in the second direction x and both ends in the third direction y can abut against the pads 20, thereby supporting the mask 200 through the pads 20. The middle part of the mask 200 is suspended so that there is a gap between the mask 200 and the glass substrate 300 with a thickness extending along the first direction z.

[0062] In some embodiments, the positions of the multiple pads 20 in the first direction z are the same, that is, the height of the second surface 21 on the multiple pads 20 in the first direction Z is the same. The surface of the mask template 200 facing the frame 10 can abut against the second surface 21. The pads 20 restrict the degree of freedom of movement of the mask template 200 in the first direction z, thereby positioning the mask template 200 by abutting against the second surface 21.

[0063] The pad 20 is movable relative to the frame 10 in the first direction z, thereby allowing the pad 20 to move relative to the electrode 30 in the first direction z, and further allowing the second surface 21 to move relative to the first surface 31 in the first direction z. The distance between the first surface 31 and the second surface 21 in the first direction z is adjustable.

[0064] The first surface 31 is used to abut against the positioning glass substrate 300, and the second surface 21 is used to abut against the positioning mask 200. The distance between the first surface 31 and the second surface 21 in the first direction z is adjustable, so that the distance between the glass substrate 300 and the mask 200 in the first direction z is adjustable. When the vapor deposition machine 100 is used to perform a coating process on the glass substrate 300, the distance between the glass substrate 300 and the mask 200 has an impact on the accuracy of the coating process.

[0065] The first detection unit 50 is disposed on the frame 10. The first detection unit 50 is used to obtain the actual distance between the second surface 21 and the first surface 31 of at least one pad 20 in the first direction z.

[0066] In some embodiments, the first detection unit 50 obtains the distance between the second surface 21 and the second surface 21 of each pad 20, so as to adjust the distance between the second surface 21 and the second surface 21 of each pad 20.

[0067] In other embodiments, the first detection unit 50 obtains the distance between the second surfaces 21 of all pads 20 at once, so as to make overall adjustments to the distance between the second surfaces 21 of all pads 20.

[0068] In some embodiments, the first detection unit 50 can be a laser rangefinder, an infrared thermometer with ranging function, a radar level gauge, or other device capable of measuring distance.

[0069] In some embodiments, such as Figure 1 and Figure 2As shown, the first detection unit 50 is arranged opposite to the frame 10 along the first direction z. The first detection unit 50 is arranged facing the first surface 31 and the second surface 21 in the first direction z. Thus, the distance between the first surface 31 and the first detection unit 50 and the distance between the second surface 21 and the first detection unit 50 are obtained through the first detection unit 50. Thus, the actual distance between the first surface 31 and the second surface 21 in the first direction z is obtained through the distance between the first surface 31 and the first detection unit 50 and the distance between the second surface 21 and the first detection unit 50.

[0070] In other embodiments (not shown in the figures), the first detection unit 50 is arranged along the second direction x or the third direction y toward the electrode 30 and the pad 20, so as to obtain the distance between the first surface 31 and the frame 10 in the first direction z and the distance between the second surface 21 and the frame 10 in the first direction z through the first detection unit 50, thereby obtaining the actual distance between the first surface 31 and the second surface 21 in the first direction z through the distance between the first surface 31 and the frame 10 in the first direction z and the distance between the second surface 21 and the frame 10 in the first direction z.

[0071] The drive assembly 40 is connected between the frame 10 and the pad 20. The drive assembly 40 is used to drive the pad 20 to move relative to the frame 10 so as to adjust the distance between the first surface 31 and the second surface 21 in the first direction z to the target distance.

[0072] In some embodiments, the drive assembly 40 may include linear motion devices such as linear motors, cylinders, hydraulic cylinders, and ball screw nut pairs, thereby driving the pad 20 to move relative to the frame 10 in the first direction z through the drive assembly 40, that is, driving the second surface 21 to move closer to the first surface 31 or driving the second surface 21 to move away from the first surface 31.

[0073] Therefore, by the action of the drive component 40, the distance between the first surface 31 and the second surface 21 in the first direction z can be adjusted. Thus, when the glass substrate 300 is mounted on the first surface 31 and the mask template 200 is mounted on the second surface 21, the gap thickness between the glass substrate 300 and the mask template 200 is adjusted, and the distance between the first surface 31 and the second surface 21 in the first direction z is adjusted to the target distance.

[0074] The beneficial effects of the vapor deposition machine 100 provided in this application embodiment are as follows: Compared with the prior art, the vapor deposition machine 100 provided in this application embodiment is provided with a first detection unit 50 and a drive component 40. The first detection unit 50 obtains the actual distance between the first surface 31 and the second surface 21 in the first direction z. The drive component 40 adjusts the distance between the first surface 31 and the second surface 21 in the first direction z to the target distance, thereby improving the efficiency of the pad 20 adjustment. Furthermore, after the electrode 30 of the vapor deposition machine 100 provided in this application embodiment is disassembled and maintained, the distance between the pad 20 and the electrode 30 can be quickly calibrated by the drive component 40 and the first detection unit 50, so that the vapor deposition machine 100 provided in this application has the advantage of being easy to maintain.

[0075] In some embodiments provided in this application, the drive includes an actuator and an encoder. The actuator is used to drive the pad 20 to move relative to the frame 10, and the encoder is connected to the drive to obtain the stroke of the actuator.

[0076] In some embodiments, the encoder is an encoder capable of obtaining the motion stroke of the actuator, such as an optical encoder, electromagnetic encoder, capacitive encoder, and inductive encoder.

[0077] In some embodiments, the actuator is a stepping device that can convert electrical pulse signals into angular or linear displacement. That is, each time the actuator receives an electrical pulse signal, it drives the pad 20 to move a fixed distance in the first direction z. This allows the actuator to drive the pad 20 to move in the first direction z to adjust the actual distance between the first surface 31 and the second surface 21 in the first direction z. The encoder can then obtain the relative distance of the second surface 21 to the first surface 31.

[0078] In some embodiments provided in this application, the plurality of pads 20 include a plurality of pad groups 201, the plurality of pad groups 201 are arranged around the electrode 30, and the drive assembly 40 includes a plurality of drive members, the drive members being connected to the pad groups 201 one by one.

[0079] like Figure 2 As shown, pads 20 are arranged around electrodes 30, and multiple pad groups 201 with similar positions are combined to form a pad group 201. All pads 20 form multiple pad groups 201. Each pad group 201 includes multiple pads 20. Each pad group 201 is provided with a corresponding driving member. The driving member drives the multiple pads 20 in each pad group 201 to move along the first direction z.

[0080] Therefore, compared to the multiple pads 20 moving as a whole along the first direction z, by dividing the multiple pads 20 into multiple pad groups 201, and each driving member driving a portion of the pads 20 to move in the first direction z, on the one hand, the movement of each pad group 20 can be controlled and adjusted independently, reducing the impact of the error of a single pad group 20 on the multiple pads 20 as a whole; on the other hand, the movement error of each pad group 20 will not be directly accumulated to another pad group 20, thereby helping to maintain the overall movement accuracy of the multiple pads 20.

[0081] In some embodiments provided in this application, the actuator includes a lead screw 42, a bracket 41, and a motor 43. The bracket 41 is connected to a plurality of pads 20 in the corresponding pad group 201. A nut is provided on the bracket 41. The lead screw 42 extends along the first direction z and can be threaded onto the nut. The motor 43 is located between the frame 10 and the lead screw 42 to drive the lead screw 42 to rotate relative to the nut. An encoder is correspondingly provided with the motor 43 to obtain the stroke of the bracket 41 in the first direction z.

[0082] like Figure 1 and Figure 3 As shown, motor 43 is a stepper motor, and the actuator is a ball screw and nut pair. The rotational motion of motor 43 is converted into linear motion along the first direction z by the threaded engagement of the screw 42 and the nut on the bracket 41. Thus, the actuator drives multiple pads 20 of the corresponding pad group 201 to move synchronously along the first direction z.

[0083] The lead screw 42 is rotatably mounted on the frame 10 and extends along the first direction z. The motor 43 is mounted on the frame 10 and its output end is connected to the lead screw 42 so that the motor 43 can drive the lead screw 42 to rotate along its axis. The bracket 41 is slidably mounted on the frame 10 along the first direction z, that is, the nut can slide relative to the frame 10 in the first direction z. The rotational motion of the lead screw 42 is converted into linear motion of the nut together with the bracket 41 and the multiple pads 20 on the bracket 41 in the first direction z through the cooperation of the lead screw 42 and the nut.

[0084] Therefore, compared with other linear motion drive devices, the ball screw nut pair has higher motion accuracy, which in turn makes the adjustment of the distance between the first surface 31 and the second surface 21 in the first direction z also have higher accuracy, further improving the maintenance efficiency of the vapor deposition machine 100 provided in the embodiments of this application.

[0085] In some embodiments provided in this application, the vapor deposition machine 100 further includes:

[0086] A central control unit (not shown in the figure) is electrically connected between the first detection unit 50 and the drive assembly 40; and an interaction unit (not shown in the figure) is electrically connected to the hollow unit to input user commands to the central control unit.

[0087] In some embodiments, the interaction unit includes a handle with buttons. The user can input the target distance between the first surface 31 and the second surface 21 in the first direction z to the central control unit through the interaction unit. The central control unit is electrically connected to the first detection unit 50 to obtain the actual distance between the first surface 31 and the second surface 21 in the first direction z through the first detection unit 50. Based on the target distance between the first surface 31 and the second surface 21 in the first direction z and the actual distance between the first surface 31 and the second surface 21 in the first direction z that it receives, the central control unit obtains the target displacement that the pad 20 needs to move in the first direction z. The target displacement includes the direction of movement and the distance of movement. The central control unit inputs the target displacement that the pad 20 needs to move in the first direction z into the drive component 40. The drive component 40 performs an action according to the target displacement that the pad 20 needs to move in the first direction z, driving the pad 20 to move in the first direction z, thereby adjusting the distance between the first surface 31 and the second surface 21 in the first direction z to the target distance.

[0088] In some embodiments provided in this application, the first detection unit 50 is electrically connected to the drive assembly 40 so that the drive assembly 40 can obtain the actual distance between the first surface 31 and the second surface 21 obtained by the first detection unit 50, and the drive assembly 40 adjusts the position of the pad 20 relative to the frame 10 according to the actual distance between the first surface 31 and the second surface 21 obtained by the first detection unit 50.

[0089] The drive assembly 40 is electrically connected to the first detection unit 50 through the central control unit. The first detection unit 50 can obtain the actual distance between the first surface 31 and the second surface 21, and convert the actual distance between the first surface 31 and the second surface 21 into an analog or digital electrical signal. The first detection unit 50 can transmit the electrical signal containing the actual distance information of the first surface 31 and the second surface 21 to the central control unit. After receiving the electrical signal containing the actual distance information of the first surface 31 and the second surface 21, the central control unit obtains the actual distance between the first surface 31 and the second surface 21. The central control unit subtracts the actual distance between the first surface 31 and the second surface 21 from the target distance between the first surface 31 and the second surface 21 to obtain the stroke that the pad block 20 needs to move in the first direction z.

[0090] Therefore, the drive assembly 40 converts the stroke that the pad 20 needs to move in the first direction z into the angle that the lead screw 42 needs to rotate in its circumferential direction. By driving the lead screw 42 to rotate by the angle that the lead screw 42 needs to rotate in its circumferential direction through the motor 43, the pad 20 can be driven to move the required displacement in the first direction z.

[0091] In some embodiments provided in this application, the vapor deposition machine 100 further includes a second detection unit (not shown in the figure). The second detection unit is disposed on the frame 10 and is electrically connected to the central control unit. The second detection unit is used to detect the thickness dimension of the glass substrate 300 in the first direction z.

[0092] In some embodiments, the second detection unit may be a laser rangefinder, an infrared thermometer with ranging function, a radar level gauge, or other device capable of measuring distance.

[0093] In some embodiments (not shown in the figures), the second detection unit is arranged along the second direction x or the third direction y toward the electrode 30 and the pad 20, so as to obtain the distance between the surface of the glass substrate 300 facing the frame 10 and the frame 10 in the first direction z and the distance between the surface of the glass substrate 300 away from the frame 10 and the frame 10 in the first direction z, thereby obtaining the thickness dimension of the glass substrate 300 in the first direction z.

[0094] In other embodiments (not shown in the figures), the second detection unit is arranged opposite to the frame 10 along the first direction z. The second detection unit is arranged facing the first surface 31 and the second surface 21 in the first direction z. The distance between the first surface 31 and the second detection unit is detected by the second detection unit. After the glass substrate 300 is mounted on the first surface 31, the distance between the surface of the glass substrate 300 facing the second detection unit and the second detection unit is detected by the second detection unit. The thickness of the glass substrate 300 in the first direction z is obtained by the distance between the first surface 31 and the second detection unit and the distance between the surface of the glass substrate 300 facing the second detection unit and the second detection unit.

[0095] The thickness of the glass substrate 300 in the first direction z is obtained by the second detection unit, thereby obtaining the target distance between the first surface 31 and the second surface 21 in the first direction z. The target distance between the first surface 31 and the second surface 21 in the first direction z is the sum of the thickness of the glass substrate 300 in the first direction z and the gap thickness between the glass substrate 300 and the mask template 200.

[0096] Therefore, the thickness of the glass substrate 300 in the first direction z is automatically obtained by the second detection unit, and the target distance of the second surface 21 in the first direction z is adjusted according to the thickness of the glass substrate 300 in the first direction z, so that the vapor deposition machine 100 provided in this application embodiment has the advantage of automatic calibration after changing the glass substrate 300 of different thicknesses.

[0097] The following is combined with Figure 5 The semiconductor processing method provided in the embodiments of this application is described.

[0098] The semiconductor processing method provided in this application is based on the vapor deposition machine 100 described in any of the above embodiments. The semiconductor processing method provided in this application includes:

[0099] Step S10: The target distance between the first surface 31 and the second surface 21 is obtained based on the thickness of the glass substrate 300 mounted on the electrode 30.

[0100] like Figure 4 As shown, a glass substrate 300 is mounted on one side of the electrode 30 in the first direction z. The thickness of the gap between the glass substrate 300 and the mask 200 required by the vapor deposition machine 100 and the thickness of the glass substrate 300 in the first direction z are added together to obtain the target distance between the first surface 31 and the second surface 21 in the first direction z required for coating on the glass substrate 300. When the distance between the first surface 31 and the second surface 21 in the first direction z is the target distance, the thickness of the gap between the glass substrate 300 and the mask 200 abutting on the second surface 21 meets the requirements for coating on the glass substrate 300.

[0101] Step S20: The actual distance between the first surface 31 and the second surface 21 is obtained according to the first detection unit 50.

[0102] In some embodiments, the first detection unit 50 can be a laser rangefinder, an infrared thermometer with ranging function, a radar level gauge, or other device capable of measuring distance.

[0103] In some embodiments, such as Figure 1 and Figure 2 As shown, the first detection unit 50 is arranged opposite to the frame 10 along the first direction z. The first detection unit 50 is arranged facing the first surface 31 and the second surface 21 in the first direction z. Thus, the distance between the first surface 31 and the first detection unit 50 and the distance between the second surface 21 and the first detection unit 50 are obtained through the first detection unit 50. Thus, the actual distance between the first surface 31 and the second surface 21 in the first direction z is obtained through the distance between the first surface 31 and the first detection unit 50 and the distance between the second surface 21 and the first detection unit 50.

[0104] In other embodiments (not shown in the figures), the first detection unit 50 is arranged along the second direction x or the third direction y toward the electrode 30 and the pad 20, so as to obtain the distance between the first surface 31 and the frame 10 in the first direction z and the distance between the second surface 21 and the frame 10 in the first direction z through the first detection unit 50, thereby obtaining the actual distance between the first surface 31 and the second surface 21 in the first direction z through the distance between the first surface 31 and the frame 10 in the first direction z and the distance between the second surface 21 and the frame 10 in the first direction z.

[0105] Step S30: Based on the actual distance between the first surface 31 and the second surface 21 and the target distance between the first surface 31 and the second surface 21, the target displacement of the multiple pads 20 is obtained.

[0106] The control unit is electrically connected to the first detection unit 50 to obtain the actual distance between the first surface 31 and the second surface 21 in the first direction z through the first detection unit 50. The central control unit obtains the target displacement that the pad block 20 needs to move in the first direction z based on the target distance between the first surface 31 and the second surface 21 in the first direction z and the actual distance between the first surface 31 and the second surface 21 in the first direction z that it receives.

[0107] In step S40, based on the target displacement of the multiple pads 20, the multiple pads 20 are driven to move synchronously by the drive component 40.

[0108] The target displacement that the pad 20 needs to move in the first direction z is the length of the action that the drive component 40 needs to perform in the first direction z.

[0109] In some embodiments, such as Figure 3 As shown, the drive assembly 40 is a ball screw and nut pair. The drive assembly 40 includes a screw 42, a bracket 41, and a motor 43. The screw 42 is rotatably mounted on the frame 10 and extends along the first direction z. The motor 43 is mounted on the frame 10, and the output end of the motor 43 is connected to the screw 42 so as to drive the screw 42 to rotate along its axis. The bracket 41 is slidably mounted on the frame 10 along the first direction z, that is, the nut can slide relative to the frame 10 in the first direction z. Through the cooperation between the screw 42 and the nut, the rotational motion of the screw 42 is converted into the linear motion of the nut together with the bracket 41 and the multiple pads 20 on the bracket 41 in the first direction z.

[0110] The drive assembly 40 converts the target displacement that the pad 20 needs to move in the first direction z into the angle that the lead screw 42 needs to rotate in its circumferential direction. By driving the lead screw 42 to rotate by the angle that the lead screw 42 needs to rotate in its circumferential direction through the motor 43, the pad 20 can be driven to move the target displacement required in the first direction z. This adjusts the distance between the first surface 31 and the second surface 21 to the target distance between the first surface 31 and the second surface 21 in the first direction z, so that the gap thickness between the glass substrate 300 and the mask 200 abutting on the second surface 21 meets the requirements for coating processing on the glass substrate 300.

[0111] The semiconductor processing method provided in this application can be used to recalibrate the distance between the pad 20 and the electrode 30 after disassembling, maintaining or replacing the electrode 30 of the vapor deposition machine 100, so as to calibrate the gap thickness between the mask 200 and the glass cover. Compared with the related technology of manually measuring the distance between the first surface 31 and the second surface 21 and manually adjusting the relative position of the pad 20 and the motor 43 in the first direction z, the semiconductor processing method provided in this application has the advantage of improving the maintenance efficiency of the vapor deposition machine 100.

[0112] In some embodiments provided in this application, the semiconductor processing method further includes:

[0113] Step S50: Repeat steps S20 to S40 until the distance between the first surface 31 and the second surface 21 is the target distance between the first surface 31 and the second surface 21.

[0114] After the drive assembly 40 drives the pad 20 to move in the first direction z, the first detection unit 50 repeatedly detects the distance between the first surface 31 and the second surface 21 in the first direction z, and determines whether the distance between the first surface 31 and the second surface 21 in the first direction z is the target distance between the first surface 31 and the second surface 21 in the first direction z. If the distance between the first surface 31 and the second surface 21 in the first direction z is the same as the target distance between the first surface 31 and the second surface 21 in the first direction z, the loop stops. If the distance between the first surface 31 and the second surface 21 in the first direction z is not the same as the target distance between the first surface 31 and the second surface 21 in the first direction z, step S30 is repeated. Based on the actual distance between the first surface 31 and the second surface 21 and the target distance between the first surface 31 and the second surface 21, the target displacement of the multiple pads 20 is obtained. In step S40, based on the target displacement of the multiple pads 20, the drive assembly 40 drives the multiple pads 20 to move synchronously.

[0115] Therefore, after driving the multiple pads 20 to move synchronously according to the target displacement of the multiple pads 20 by the drive component 40, the first detection unit 50 repeatedly detects the distance between the first surface 31 and the second surface 21 in the first direction z, which can determine whether the movement of the pads 20 is in place, thereby improving the accuracy of the semiconductor processing method provided in this application in calibrating the motor 43 and the pads 20.

[0116] In some embodiments provided in this application, step S10 includes:

[0117] The thickness of the glass substrate 300 is obtained through the second detection unit;

[0118] The thickness of the glass substrate 300 is input to the central control unit through the second detection unit, and the target gap size between the glass substrate 300 and the second surface 21 is input to the central control unit through the interaction unit.

[0119] The central control unit obtains the target distance between the first surface 31 and the second surface 21 by using the gap size between the glass substrate 300 and the second surface 21 and the thickness size of the glass substrate 300.

[0120] In some embodiments, the second detection unit may be a laser rangefinder, an infrared thermometer with ranging function, a radar level gauge, or other device capable of measuring distance.

[0121] In some embodiments (not shown in the figures), the second detection unit is arranged along the second direction x or the third direction y toward the electrode 30 and the pad 20, so as to obtain the distance between the surface of the glass substrate 300 facing the frame 10 and the frame 10 in the first direction z and the distance between the surface of the glass substrate 300 away from the frame 10 and the frame 10 in the first direction z, thereby obtaining the thickness dimension of the glass substrate 300 in the first direction z.

[0122] In other embodiments (not shown in the figures), the second detection unit is arranged opposite to the frame 10 along the first direction z. The second detection unit is arranged facing the first surface 31 and the second surface 21 in the first direction z. The distance between the first surface 31 and the second detection unit is detected by the second detection unit. After the glass substrate 300 is mounted on the first surface 31, the distance between the surface of the glass substrate 300 facing the second detection unit and the second detection unit is detected by the second detection unit. The thickness of the glass substrate 300 in the first direction z is obtained by the distance between the first surface 31 and the second detection unit and the distance between the surface of the glass substrate 300 facing the second detection unit and the second detection unit.

[0123] Therefore, the thickness of the glass substrate 300 is obtained through the second detection unit. After replacing the glass substrate 300 with a different thickness on the motor 43, the semiconductor processing method provided in this application can still adjust the distance between the first surface 31 and the second surface 21 so that the gap thickness between the glass substrate 300 and the mask 200 abutting on the second surface 21 meets the requirements for coating processing on the glass substrate 300. Thus, the semiconductor processing method provided in this application can be applied to coating the glass substrate 300 after replacing the glass substrate 300 with a different thickness.

[0124] In other embodiments, the thickness of the glass substrate 300 can be manually input to the central control unit via the interactive unit.

[0125] The above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A vapor deposition machine, characterized in that, include: frame; An electrode, detachably disposed on the frame, wherein the end of the electrode along a first direction has a first surface for abutting and positioning against a glass substrate; Multiple pads are movably disposed on the frame in the first direction, and the multiple pads are spaced apart on the periphery of the electrode. The end of each pad along the first direction has a second surface for abutting and positioning against a mask template. A first detection unit is disposed on the frame and is used to obtain the actual distance between the second surface of at least one pad and the first surface in the first direction. A drive assembly is connected between the frame and the pad, the drive assembly being used to drive the pad to move relative to the frame to adjust the distance between the first surface and the second surface in the first direction to a target distance.

2. The vapor deposition machine as described in claim 1, characterized in that: The plurality of pads include a plurality of pad groups, the plurality of pad groups are arranged around the electrode, and the drive assembly includes a plurality of drive members, the drive members being connected to the pad groups one by one.

3. The vapor deposition machine as described in claim 2, characterized in that: The drive unit includes an actuator and an encoder. The actuator is used to drive the pad block to move relative to the frame, and the encoder is connected to the drive unit to obtain the stroke of the actuator.

4. The vapor deposition machine as described in claim 3, characterized in that: The actuator includes a lead screw, a bracket, and a motor. The bracket is connected to a plurality of the pads in the corresponding pad group. The bracket is provided with a nut. The lead screw extends along a first direction and is threaded onto the nut. The motor drives the lead screw to rotate relative to the nut. The encoder is configured to correspond to the motor to obtain the stroke of the bracket in the first direction.

5. The vapor deposition machine as described in claim 1, characterized in that: The first detection unit is electrically connected to the drive assembly so that the drive assembly can obtain the actual distance between the first surface and the second surface obtained by the first detection unit. The drive assembly adjusts the position of the pad relative to the frame according to the actual distance between the first surface and the second surface obtained by the first detection unit.

6. The vapor deposition machine as described in any one of claims 1-5, characterized in that, The vapor deposition machine also includes: A central control unit, electrically connected between the first detection unit and the drive assembly; and An interactive unit is electrically connected to the hollow unit to input user commands to the central control unit.

7. The vapor deposition machine as described in claim 6, characterized in that: The vapor deposition machine further includes a second detection unit, which is disposed on the frame and electrically connected to the central control unit. The second detection unit is used to detect the thickness of the glass substrate in the first direction.

8. A semiconductor processing method, based on the vapor deposition machine according to any one of claims 1-7, characterized in that, include: Step S10: Obtain the target distance between the first surface and the second surface based on the thickness of the glass substrate mounted on the electrode; Step S20: Obtain the actual distance between the first surface and the second surface based on the first detection unit; Step S30: Based on the actual distance between the first surface and the second surface and the target distance between the first surface and the second surface, the target displacement of the plurality of pads is obtained; Step S40: Based on the target displacement of the plurality of pads, drive the plurality of pads to move synchronously via the drive component.

9. The semiconductor processing method as described in claim 8, characterized in that, Also includes: Step S50: Repeat step S30 until the distance between the first surface and the second surface is the target distance between the first surface and the second surface.

10. The semiconductor processing method as described in claim 8, characterized in that, Step S10 includes: The thickness of the glass substrate is obtained through the second detection unit; The thickness of the glass substrate is input to the central control unit through the second detection unit, and the target gap size between the glass substrate and the second surface is input to the central control unit through the interaction unit. The central control unit obtains the target distance between the first surface and the second surface by using the gap size between the glass substrate and the second surface and the thickness size of the glass substrate.

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