Vapor deposition apparatus and vapor deposition method
Patent Information
- Application Number
- CN202510404120.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-28
- Publication Date
- 2026-09-29
AI Technical Summary
[0004]有鉴于此,本申请实施例提供了一种蒸镀装置和蒸镀方法,以解决蒸镀装置中,掩膜版与基板之间容易贴合不均匀,蒸镀效果差的问题
[0016]此外,第一支撑组件可以对掩膜版的边缘进行限位,第二支撑组件可以对基板的边缘进行限位,从而在移动组件的驱动过程中,防止因磁吸组件的相对移动,使掩膜版和基板相对于各自的支撑组件产生窜动。
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Figure CN122833496A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and in particular to a vapor deposition apparatus and a vapor deposition method. Background Technology
[0002] Organic light-emitting diodes (OLEDs), as a new generation of display technology, have gradually become the preferred solution in the high-end display field due to their self-emissive characteristics, ultra-thin structure, wide viewing angle, microsecond-level response speed and low power consumption. They have shown significant application potential, especially in flexible displays, wearable devices and automotive displays.
[0003] In the manufacturing process of OLED display panels, molecular deposition is typically performed on the substrate surface using vacuum evaporation. A mask is placed on the side of the substrate where molecular deposition is desired to obtain the required pattern on the substrate surface. However, in existing evaporation equipment, uneven adhesion between the mask and the substrate is a common problem, which affects the evaporation effect. Summary of the Invention
[0004] In view of this, embodiments of this application provide a vapor deposition apparatus and a vapor deposition method to solve the problem that the mask and the substrate are easily unevenly bonded in the vapor deposition apparatus, resulting in poor vapor deposition effect.
[0005] In a first aspect, one embodiment of this application provides a vapor deposition apparatus for performing at least two vapor deposition processes on a substrate. The vapor deposition apparatus includes: a process chamber having a process cavity for accommodating a substrate and a photomask; a first support assembly for supporting and positioning the edge of the photomask; a second support assembly, at least a portion of which is located on one side of the first support assembly, for supporting the edge of the substrate, positioning the substrate on one side of the photomask, and positioning the edge of the substrate; a magnetic attraction assembly located on the side of the second support assembly away from the first support assembly, for attracting the photomask to the side of the substrate away from the magnetic attraction assembly; and a moving assembly disposed in the process chamber and connected to the magnetic attraction assembly and / or to the first and second support assemblies, for driving the magnetic attraction assembly to move and / or driving the first and second support assemblies to move after the first vapor deposition process, so that the position of the orthographic projection of the magnetic attraction assembly on the substrate is different in the at least two vapor deposition processes.
[0006] In some implementations of the first aspect, the magnetic absorbing assembly includes a plurality of magnetic absorbing units, which are spaced apart on the side of the second support assembly away from the first support assembly. The plurality of magnetic absorbing units are used to adsorb the mask onto the side of the substrate away from the magnetic absorbing units. When the plurality of magnetic absorbing units adsorb the mask onto the side of the substrate away from the magnetic absorbing units, the area corresponding to the orthographic projection of the magnetic absorbing unit on the substrate is a strong magnetic region, and the area corresponding to the orthographic projection of the interval between adjacent magnetic absorbing units on the substrate is a weak magnetic region. The moving assembly is used to drive the plurality of magnetic absorbing units to move and / or drive the first support assembly and the second support assembly to move after the first vapor deposition process, so that at least a portion of the portion of the substrate located in the weak magnetic region during the first vapor deposition process is located in the strong magnetic region.
[0007] In some implementations of the first aspect, a plurality of magnetic units are arranged at intervals along a first direction, the size of the magnetic units along the first direction is a first dimension, and the size of the interval between adjacent magnetic units along the first direction is a second dimension; a moving component is connected to the plurality of magnetic units and is used to drive the plurality of magnetic units to move after the first vapor deposition process, so that the magnetic units move a first preset distance along the first direction, the first preset distance being greater than zero and less than an integer multiple of the sum of the first dimension and the second dimension; a first support component is used to limit the edge of the mask at least along the first direction; a second support component is used to limit the edge of the substrate at least along the first direction.
[0008] In some implementations of the first aspect, the first dimension is greater than or equal to the second dimension; the first preset distance is greater than or equal to the second dimension and less than or equal to the first dimension.
[0009] In some implementations of the first aspect, a plurality of magnetic units are further arranged at intervals along a second direction, the second direction being perpendicular to the first direction, wherein the dimension of the magnetic unit along the second direction is a third dimension, and the dimension of the interval between adjacent magnetic units along the second direction is a fourth dimension; the moving component is further configured to drive the plurality of magnetic units to move after the first vapor deposition process, so that the magnetic units move a second preset distance along the second direction, the second preset distance being greater than zero and less than an integer multiple of the sum of the third and fourth dimensions; the first support component is configured to limit the edge of the mask at least along the first and second directions; the second support component is configured to limit the edge of the substrate at least along the first and second directions.
[0010] In some implementations of the first aspect, the process cavity has an opening that communicates with the process chamber; the vapor deposition apparatus further includes a hollow sealing tube, one end of which is sealed to the edge of the opening; wherein the moving component includes a driving unit that is sealed to the other end of the hollow sealing tube, the driving unit having a driving part that extends into the process chamber through the hollow sealing tube and the opening; and a moving unit connected to the driving part and multiple magnetic units, which drives the multiple magnetic units to move under the drive of the driving part.
[0011] In some implementations of the first aspect, the vapor deposition apparatus further includes: a lifting component disposed in the process chamber and connected to a moving component, for driving the moving component to reciprocate along a third direction, so that the moving component drives multiple magnetic units to approach or move away from the substrate and / or the mask.
[0012] In some implementations of the first aspect, the magnetic poles of adjacent magnetic units are opposite.
[0013] In some implementations of the first aspect, the vapor deposition apparatus further includes a cooling component disposed adjacent to the magnetic component and / or the second support component.
[0014] Secondly, embodiments of this application provide a vapor deposition method applied to the vapor deposition apparatus mentioned in any of the first aspects. The vapor deposition method includes: after the substrate completes a first vapor deposition process, a moving component of the vapor deposition apparatus drives a magnetic component of the vapor deposition apparatus to move and / or drives a first support component and a second support component of the vapor deposition apparatus to move, so that the position of the orthographic projection of the magnetic component on the substrate is different in at least two vapor deposition processes; and performing a second vapor deposition process on the substrate.
[0015] The vapor deposition apparatus provided in this embodiment is used to perform at least two vapor deposition processes on a substrate. A first support component supports the edge of a mask, a second support component supports the edge of the substrate, and a magnetic suction component causes the mask to adhere to the side of the substrate away from the magnetic suction component. A moving component can be connected to the magnetic suction component, as well as to the first and second support components. After the first vapor deposition process, it drives the magnetic suction component to move and / or drives the first and second support components to move, so that the position of the orthographic projection of the magnetic suction component on the substrate is different in the at least two vapor deposition processes. After one vapor deposition process is completed, the position of the magnetic suction component relative to the substrate is changed by driving the moving component. This changes the area where the magnetic force of the magnetic suction component on the mask was originally weak, i.e., the area where the substrate and mask did not adhere well, into the area where the magnetic force of the magnetic suction component on the mask was stronger, turning the area where the substrate and mask did not adhere well into the area where they adhere well. Then, the next vapor deposition process is performed, so that the original shadowed area is vapor-deposited with vapor deposition material, thereby improving the vapor deposition effect.
[0016] In addition, the first support component can limit the edge of the mask, and the second support component can limit the edge of the substrate, thereby preventing the mask and substrate from shifting relative to their respective support components due to the relative movement of the magnetic components during the driving process of the moving component. Attached Figure Description
[0017] The above and other objects, features, and advantages of this application will become more apparent from the more detailed description of the embodiments of this application in conjunction with the accompanying drawings. The drawings are provided to further illustrate the embodiments of this application and form part of the specification. They are used together with the embodiments of this application to explain this application and do not constitute a limitation thereof. In the drawings, the same reference numerals generally represent the same components or steps.
[0018] Figure 1 The diagram shown is a structural schematic of an application scenario for a vapor deposition apparatus provided in an embodiment of this application.
[0019] Figure 2 The diagram shown is a structural schematic of an application scenario for a vapor deposition apparatus provided in another embodiment of this application.
[0020] Figure 3 The diagram shown is a structural schematic of an application scenario for a vapor deposition apparatus provided in another embodiment of this application.
[0021] Figure 4 The diagram shown is a structural schematic of the first support component provided in an embodiment of this application.
[0022] Figure 5 The diagram shown is a schematic flow chart of a vapor deposition method provided in an embodiment of this application.
[0023] Figure 6 The diagram shown is a comparison of the magnetic suction component before and after it moves relative to the substrate, according to an embodiment of this application.
[0024] Figure 7 The diagram shown is a schematic flow chart of a vapor deposition method provided in another embodiment of this application.
[0025] Figure 8 The image shown is a bottom view of a magnetic suction assembly provided in an embodiment of this application.
[0026] Figure 9 The diagram shown is a structural schematic of an application scenario for a vapor deposition apparatus provided in another embodiment of this application.
[0027] Figure 10 The diagram shown is a schematic flow chart of a vapor deposition method provided in another embodiment of this application.
[0028] Figure 11The diagram shown is a bottom view of a magnetic suction assembly provided in another embodiment of this application.
[0029] Figure 12 The diagram shown is a schematic flow chart of a vapor deposition method provided in another embodiment of this application.
[0030] Figure label:
[0031] 10. Evaporation apparatus; 11. Process chamber; 110. Process chamber; 111. Opening; 12. First support assembly; 13. Second support assembly; 14. Magnetic suction assembly; 140. Magnetic suction unit; 141. Support plate; 15. Moving assembly; 150. Drive unit; 1500. Drive unit; 151. Moving unit; 16. Stage; 17. Hollow sealing tube; 18. Lifting assembly; 190. First pressing assembly; 191. Second pressing assembly; 192. Third pressing assembly; 193. Cooling assembly; 20. Substrate; 30. Mask; 40. Evaporation source; W1. First dimension; W2. Second dimension; W4. Third dimension; W4. Fourth dimension; X1. First direction; X2. Second direction; X3. Third direction. Detailed Implementation
[0032] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0033] Organic light-emitting diodes (OLEDs), as a new generation of display technology, have gradually become the preferred solution in the high-end display field due to their self-emissive characteristics, ultra-thin structure, wide viewing angle, microsecond-level response speed and low power consumption. They have shown significant application potential, especially in flexible displays, wearable devices and automotive displays.
[0034] In the manufacturing process of OLED display panels, molecular deposition is performed on the substrate surface using a vacuum evaporation apparatus. A mask is placed on the side of the substrate where molecular deposition is required to obtain the desired pattern on the substrate surface. The magnetic attraction component of the evaporation apparatus is used to subject the mask to magnetic force, thereby achieving bonding between the substrate and the mask.
[0035] However, in existing vapor deposition equipment, the magnetic force of the magnetic assemblies on the mask is not uniform. For example, the magnetic force of the edge area of the magnetic assemblies on the mask is smaller than that of the center area of the magnetic assemblies on the mask. This can lead to uneven adhesion between the mask and the substrate. Shadows can easily appear in the uneven areas, resulting in poor display of the display panel, such as mura on the display panel.
[0036] To address the aforementioned problems, this application provides a vapor deposition apparatus for performing at least two vapor deposition processes on a substrate. The vapor deposition apparatus includes: a process chamber having a process cavity for accommodating a substrate and a photomask; a first support component for supporting and limiting the edge of the photomask; a second support component, at least a portion of which is located on one side of the first support component, for supporting the edge of the substrate, positioning the substrate on one side of the photomask, and limiting the edge of the substrate; a magnetic suction component located on the side of the second support component away from the first support component, for adsorbing the photomask onto the side of the substrate away from the magnetic suction component; and a moving component disposed in the process chamber and connected to the magnetic suction component and / or to the first and second support components, for driving the magnetic suction component to move and / or driving the first and second support components to move after the first vapor deposition process, so that the position of the orthographic projection of the magnetic suction component on the substrate is different in the at least two vapor deposition processes.
[0037] After a vapor deposition process is completed, the position of the magnetic component relative to the substrate is changed by driving the moving component. This changes the area where the magnetic force of the magnetic component on the mask was originally weak, i.e., the area where the substrate and mask did not adhere well, into the area where the magnetic force of the magnetic component on the mask is strong, turning the area where the substrate and mask did not adhere well into the area where they adhere well. Then the next vapor deposition process is performed, so that the original shadowed area is vapor-deposited with vapor material, thus improving the vapor deposition effect.
[0038] In addition, the first support component can limit the edge of the mask, and the second support component can limit the edge of the substrate, thereby preventing the mask and substrate from shifting relative to their respective support components due to the relative movement of the magnetic components during the driving process of the moving component.
[0039] Figure 1 The diagram shown is a structural schematic of an application scenario for a vapor deposition apparatus provided in an embodiment of this application. Figure 2 The diagram shown is a structural schematic of an application scenario for a vapor deposition apparatus provided in another embodiment of this application. Figure 3 The diagram shown is a structural schematic of an application scenario for a vapor deposition apparatus provided in another embodiment of this application. Figure 4 The diagram shown is a structural schematic of the first support component provided in an embodiment of this application.
[0040] like Figures 1 to 4 As shown, the vapor deposition apparatus 10 is used to perform at least two vapor deposition processes on the substrate 20. The vapor deposition apparatus 10 includes: a process chamber 11, a first support assembly 12, a second support assembly 13, a magnetic suction assembly 14, and a moving assembly 15.
[0041] The process chamber 11 has a process cavity 110 for accommodating a substrate 20 and a photomask 30. A first support assembly 12 supports and limits the edge of the photomask 30. At least a portion of a second support assembly 13 is located on one side of the first support assembly 12. The second support assembly 13 supports the edge of the substrate 20, positioning the substrate 20 on one side of the photomask 30. The second support assembly 13 also limits the edge of the substrate 30.
[0042] The magnetic attachment component 14 is located on the side of the second support component 13 away from the first support component 12, and is used to attach the mask 30 to the side of the substrate 20 away from the magnetic attachment component 14.
[0043] The moving component 15 is disposed in the process chamber 11. The moving component 15 can be connected to the magnetic component 14, and can also be connected to the first support component 12 and the second support component 13. The moving component 15 is used to drive the magnetic component 14 to move, or drive the first support component 12 and the second support component 13 to move, or drive the magnetic component 14, the first support component 12 and the second support component 13 to move, so that the position of the orthographic projection of the magnetic component 14 on the substrate 20 is different in at least two vapor deposition processes.
[0044] Specifically, the vapor deposition apparatus 10 is used to perform a vapor deposition process. Exemplarily, the vapor deposition apparatus can be used for a vacuum thermal vapor deposition process. Exemplarily, the vapor deposition apparatus can be used to fabricate an OLED display panel. For example, the vapor deposition apparatus can be used to fabricate the light-emitting layer of an OLED display panel.
[0045] Specifically, the first support component 12 supports the edge of the photomask 30, ensuring that the pattern on the photomask 30 is not obscured. The second support component 13 supports the edge of the substrate 20, ensuring that the area of the substrate 20 to be vapor-deposited is not obscured. The structure of the first support component 12 is as follows: Figure 4 As shown. The structure of the second support component 13 can be similar to that of the first support component 12, and reference can be made further to 4. Exemplarily, the substrate includes at least one of silicon wafers, silicon wafers, and glass sheets.
[0046] Specifically, the magnetic attraction component 14 is used to provide magnetic force for adsorbing the mask 30. The magnetic attraction component 14 can be any structure capable of providing magnetic attraction. Exemplarily, the magnetic attraction component 14 can include a permanent magnet or an electromagnet. Exemplarily, the magnetic attraction component can be a single magnetic body or can include multiple magnetic bodies.
[0047] The movable component 15 can be any structure capable of driving the magnetic component 14 to move or driving the first support component 12 and the second support component 13 to move. For example... Figures 1 to 3 As shown, the moving component 15 is disposed in the process chamber 11 and connected to the first support component 12 and the second support component 13. Exemplarily, the moving component may include a motor and an outer rotor disposed outside the process chamber, an inner rotor disposed inside the process chamber, a lead screw connected to the inner rotor, and a slider sleeved on the lead screw. The slider is connected to the first and second support components. The extension direction of the central axis of the lead screw is the same as the movement direction of the first and second support components. The movement direction of the first and second support components may include a horizontal direction, or it may include both a horizontal and a vertical direction. The motor outside the process chamber drives the outer rotor to rotate, and the outer rotor and the inner rotor are coupled through a magnetic field, thereby causing the inner rotor to rotate. The inner rotor drives the lead screw to rotate. When the lead screw rotates, the slider drives the first and second support components to move, thereby changing the position of the orthographic projection of the magnetic attraction component on the substrate.
[0048] For example, such as Figures 1 to 3 As shown, the vapor deposition apparatus 10 may further include a stage 16. The stage 16 is disposed on the side of the first support assembly 12 away from the second support assembly 13, and is used to support the vapor deposition source 40. Along the orientation of the vapor deposition source 40, the mask 30, the substrate 20 and the magnetic suction assembly 14 are arranged in sequence.
[0049] In some application scenarios, such as Figures 1 to 3 As shown, the moving component 15 is connected to the first support component 12 and the second support component 13, and is used to drive the first support component 12 and the second support component 13 to move. The magnetic suction component 14 is disposed in the process cavity 11. Figure 1 The image shows the state when the magnetic absorbing assembly 14, the substrate 20, and the mask 30 are not pressed together. Figure 2 The image shows the state after the magnetic assembly 14, substrate 20, and mask 30 are pressed together. Figure 2 As shown, after the magnetic assembly 14, substrate 20, and mask 30 are pressed together, the first vapor deposition process is performed. After the first vapor deposition process is completed, as shown... Figure 3 As shown, the moving component 15 drives the first support component 12 and the second support component 13 to move to the left, changing the position of the orthogonal projection of the magnetic component 14 on the substrate 20.
[0050] During the movement of the first support component 12 and the second support component 13, the first support component 12 can limit the mask 30 and the second support component 13 can limit the substrate 20, which can prevent the mask 30 and the substrate 20 from moving.
[0051] For example, the moving component 15 can be used to drive the first support component 12 and the second support component 13 to move synchronously. In some application scenarios, during the movement of the first support component 12 and the second support component 13, there is no relative displacement between the first support component 12 and the second support component 13. The limiting effect of the first support component 12 and the second support component 13 can keep the mask 30 and the substrate 20 well aligned, which is beneficial to improving yield and production efficiency.
[0052] Because the magnetic force provided by the magnetic chuck is not uniform, some areas have stronger magnetic forces than others. For example, the magnetic force on the mask is weaker at the edge of the magnetic chuck compared to the center. Therefore, by setting a moving component, which can drive the magnetic chuck and also the first and second support components to move, the position of the magnetic chuck relative to the substrate after lamination can be changed. After one vapor deposition process, the moving component changes the position of the magnetic chuck relative to the substrate, transforming areas where the magnetic force was weak (i.e., areas with poor adhesion between the substrate and the mask) into areas with stronger magnetic force, thus changing poorly adhered areas into well-adhered areas. Then, the next vapor deposition process is performed, allowing the previously shaded areas to be coated with the vapor deposition material.
[0053] The vapor deposition apparatus provided in this embodiment is used to perform at least two vapor deposition processes on a substrate. A first support component supports the edge of a mask, a second support component supports the edge of the substrate, and a magnetic suction component causes the mask to adhere to the side of the substrate away from the magnetic suction component. A moving component can be connected to the magnetic suction component, as well as to the first and second support components. After the first vapor deposition process, it drives the magnetic suction component to move and / or drives the first and second support components to move, so that the position of the orthographic projection of the magnetic suction component on the substrate is different in the at least two vapor deposition processes. After one vapor deposition process is completed, the position of the magnetic suction component relative to the substrate is changed by driving the moving component. This changes the area where the magnetic force of the magnetic suction component on the mask was originally weak, i.e., the area where the substrate and mask did not adhere well, into the area where the magnetic force of the magnetic suction component on the mask was stronger, turning the area where the substrate and mask did not adhere well into the area where they adhere well. Then, the next vapor deposition process is performed, so that the original shadowed area is vapor-deposited with vapor deposition material, thereby improving the vapor deposition effect.
[0054] In addition, the first support component can limit the edge of the mask, and the second support component can limit the edge of the substrate, thereby preventing the mask and substrate from shifting relative to their respective support components due to the relative movement of the magnetic components during the driving process of the moving component.
[0055] Figure 5 The diagram shown is a schematic flow chart of a vapor deposition method provided in an embodiment of this application.
[0056] like Figure 5 As shown, one embodiment of this application also provides a vapor deposition method. This vapor deposition method can be applied to the vapor deposition apparatus 10 mentioned in any embodiment of this application. The vapor deposition method includes the following steps.
[0057] In step S500, after the first vapor deposition process is completed on the substrate 20, the moving component 15 of the vapor deposition apparatus 10 drives the magnetic component 14 of the vapor deposition apparatus 10 to move, and can also drive the first support component 12 and the second support component 13 of the vapor deposition apparatus 10 to move, so that the position of the orthographic projection of the magnetic component 14 on the substrate 20 is different in at least two vapor deposition processes.
[0058] Step S510: Perform a second vapor deposition process on substrate 20.
[0059] Specifically, the at least two vapor deposition processes include a first vapor deposition process and a second vapor deposition process. For example, before performing step S500, the magnetic accumulator assembly and the substrate may be in contact. When performing step S500, the moving component may drive the magnetic accumulator assembly to move, or the first support component and the second support component may move, causing the magnetic accumulator assembly to become de-adhered to the substrate, and then changing the position of the orthogonal projection of the magnetic accumulator assembly on the substrate. Alternatively, the moving component may keep the magnetic accumulator assembly in contact with the substrate and slide the magnetic accumulator assembly or the substrate along their contact surface to change the position of the orthogonal projection of the magnetic accumulator assembly on the substrate.
[0060] The vapor deposition method provided in this embodiment, after the substrate completes the first vapor deposition process, drives the magnetic attraction component of the vapor deposition apparatus to move, and can also drive the first and second support components of the vapor deposition apparatus to move, so that the position of the orthographic projection of the magnetic attraction component on the substrate is different in at least two vapor deposition processes, and then the substrate is subjected to a second vapor deposition process. After one vapor deposition process is completed, by driving the moving component, the position of the magnetic attraction component relative to the substrate is changed, so that the area where the magnetic attraction component had a weak magnetic force on the mask, i.e., the area where the substrate and the mask were not well attached, becomes the area where the magnetic attraction component had a strong magnetic force on the mask, and the area where the substrate and the mask were not well attached becomes the area where they are well attached, and then the next vapor deposition process is performed, so that the original shadowed area is vapor-deposited with vapor deposition material, thereby improving the vapor deposition effect.
[0061] Figure 6 The diagram shown is a comparison of the magnetic suction component before and after it moves relative to the substrate, according to an embodiment of this application.
[0062] In some embodiments, such as Figures 1 to 3 as well as Figure 6 As shown, the magnetic assembly 14 includes a plurality of magnetic units 140. The plurality of magnetic units 140 are arranged at intervals on the side of the second support assembly 13 opposite to the first support assembly 12. The plurality of magnetic units 140 are used to attract the mask 30 to the side of the substrate 20 away from the magnetic units 140.
[0063] When multiple magnetic units 140 adsorb the mask 30 onto the side of the substrate 20 away from the magnetic units 140, the area corresponding to the orthogonal projection of the magnetic units 140 on the substrate 20 is a strong magnetic area, and the area corresponding to the orthogonal projection of the interval between adjacent magnetic units 140 on the substrate 20 is a weak magnetic area.
[0064] The moving component 15 is used to drive multiple magnetic units 140 to move after the first vapor deposition process, and can also drive the first support component 12 and the second support component 13 to move so that at least a portion of the portion of the substrate 20 located in the weak magnetic region is located in the strong magnetic region.
[0065] Because of the magnetic field attenuation (edge effect) at the edges of a large magnet, the magnetic force exerted by the magnet on the edges of the photomask is insufficient. In this embodiment, the magnetic attraction assembly 14 includes multiple magnetic attraction units 140, which are arranged at intervals. These discrete magnetic attraction units 140 help to make the magnetic force on the photomask 30 more uniform. Exemplarily, each magnetic attraction unit 140 can individually control the magnitude of the magnetic force to apply differentiated magnetic force compensation to different areas of the photomask 30 (e.g., areas prone to sagging).
[0066] Since the multiple magnetic units 140 are arranged at intervals, the magnetic force on the mask 30 is relatively small in the area between adjacent magnetic units 140. That is, the mask 30 corresponding to the weak magnetic area experiences a smaller magnetic force. Therefore, poor adhesion may occur between the substrate 20 and the mask 30 corresponding to the weak magnetic area. To solve the above problem, the moving component 15 is used to drive the multiple magnetic units 140 to move after the first vapor deposition process, and can also drive the first support component 12 and the second support component 13 to move, so that at least a portion of the portion of the substrate 20 located in the weak magnetic area during the first vapor deposition process is located in the strong magnetic area.
[0067] For example, Figure 6 (a) shows a schematic diagram of the positional relationship between the magnetic suction unit 140, the substrate 20 and the mask 30 when the substrate 20 is subjected to the first vapor deposition process. Figure 6(b) shows a schematic diagram of the positional relationship between the magnetic suction unit 140, the substrate 20 and the mask 30 when the substrate 20 undergoes the second vapor deposition process. Figure 6 In (a), after being driven by the moving component 15, the multiple magnetic suction units 140 move to the right relative to the substrate 20. In the second vapor deposition process, the positional relationship between the magnetic suction units 140, the substrate 20, and the mask 30 is as follows: Figure 6 As shown in (b). In Figure 6 In (b), the portion of substrate 20 located in the weak magnetic region during the first vapor deposition process is entirely located in the strong magnetic region. In other embodiments, the portion of substrate 20 located in the weak magnetic region during the first vapor deposition process may not be entirely located in the strong magnetic region; that is, at least a portion of the portion of substrate 20 located in the weak magnetic region is located in the strong magnetic region.
[0068] For example, the magnetic attraction unit may include an electromagnet or a permanent magnet. The shape of the magnetic attraction unit can be set according to actual needs, and this embodiment does not impose a specific limitation. For example, multiple magnetic attraction units are evenly arranged on the side of the second support component opposite to the first support component.
[0069] The vapor deposition apparatus provided in this embodiment includes a magnetic suction component comprising multiple magnetic suction units. These multiple magnetic suction units are arranged at intervals on the side of the second support component away from the first support component. By setting multiple discrete magnetic suction units, it is beneficial to make the magnetic force on the mask more uniform, thereby improving the vapor deposition effect.
[0070] When multiple magnetic units attract the mask to the side of the substrate furthest from the magnetic units, the area corresponding to the orthographic projection of the magnetic units on the substrate is a strong magnetic region, and the area corresponding to the orthographic projection of the interval between adjacent magnetic units on the substrate is a weak magnetic region. After the first vapor deposition process, the moving component can drive the multiple magnetic units to move, and can also drive the first support component and the second support component to move, so that at least a portion of the portion of the substrate located in the weak magnetic region during the first vapor deposition process is located in the strong magnetic region. This changes the position of the magnetic components relative to the substrate, so that the area where there might be poor adhesion between the substrate and the mask corresponding to the weak magnetic region becomes at least a portion of the area where the substrate and the mask are well-adhered, corresponding to the strong magnetic region, further improving the vapor deposition effect.
[0071] Figure 7 The diagram shown is a schematic flow chart of a vapor deposition method provided in another embodiment of this application. Figure 6 Extending from the illustrated embodiment Figure 7 The illustrated embodiment will be described in detail below. Figure 7 The illustrated embodiments and Figure 6 The differences between the embodiments shown are not repeated here, and the similarities are not repeated here.
[0072] like Figure 7As shown, step S500 may include the following steps.
[0073] In step S700, after the substrate completes the first vapor deposition process, the multiple magnetic suction units driven by the moving component move and / or the first support component and the second support component move, so that at least a portion of the portion of the substrate located in the weak magnetic region during the first vapor deposition process is located in the strong magnetic region.
[0074] It should be understood that the description of the vapor deposition apparatus embodiment corresponds to the description of the vapor deposition method embodiment. Therefore, any parts not described in detail can be referred to the vapor deposition apparatus embodiment.
[0075] Figure 8 The image shown is a bottom view of a magnetic suction assembly provided in an embodiment of this application. Figure 9 The diagram shown is a structural schematic of an application scenario for a vapor deposition apparatus provided in another embodiment of this application.
[0076] like Figure 8 and Figure 9 As shown, multiple magnetic attraction units 140 are arranged at intervals along a first direction X1. The dimension of the magnetic attraction unit 140 along the first direction X1 is a first dimension W1. The interval between adjacent magnetic attraction units 140 along the first direction X1 is a second dimension W2.
[0077] The moving component 15 is connected to a plurality of magnetic units 140 and is used to drive the plurality of magnetic units 140 to move after the first vapor deposition process, so that the magnetic units 140 move a first preset distance along a first direction X1. The first preset distance is greater than zero and less than an integer multiple of the sum of the first size W1 and the second size W2.
[0078] The first support component 12 is used to limit the edge of the mask 30 at least along the first direction X1. This is to prevent the mask 30 from shifting relative to the first support component 12 along the first direction X1 due to the relative movement of the magnetic units 140 when the moving component 15 drives the plurality of magnetic units 140 to move.
[0079] The second support component 13 is used to limit the edge of the substrate 20 at least along the first direction X1. This is to prevent the substrate 20 from shifting relative to the second support component 13 along the first direction X1 due to the relative movement of the magnetic attraction units 140 when the moving component 15 drives the plurality of magnetic attraction units 140 to move.
[0080] Multiple magnetic units 140 are arranged at intervals along the first direction X1, with adjacent magnetic units 140 having a gap along the first direction X1. After the first vapor deposition process, the multiple magnetic units 140 are moved by the moving component 15, causing the magnetic units 140 to move a first preset distance along the first direction X1. The first preset distance is greater than zero and less than an integer multiple of the sum of the first size W1 and the second size W2. Since when the first preset distance is equal to zero or equal to an integer multiple of the sum of the first size W1 and the second size W2, the portion of the substrate 20 located in the weak magnetic region along the first direction X1 in the first vapor deposition process is still entirely located in the weak magnetic region, this arrangement allows part or all of the portion of the substrate 20 located in the weak magnetic region along the first direction X1 in the first vapor deposition process to be located in the strong magnetic region.
[0081] Exemplarily, the magnetic traction assembly 14 may further include a support plate 141. A plurality of magnetic traction units 140 are arranged at intervals on one side of the support plate 141. Exemplarily, the plurality of magnetic traction units are evenly arranged along a first direction.
[0082] The vapor deposition apparatus provided in this embodiment has multiple magnetic suction units arranged at intervals along a first direction. The size of the magnetic suction unit along the first direction is a first size, and the size of the interval between adjacent magnetic suction units along the first direction is a second size. After the first vapor deposition process, the moving component drives the multiple magnetic suction units to move so that the magnetic suction units move a first preset distance along the first direction. The first preset distance is greater than zero and less than an integer multiple of the sum of the first size and the second size, so that part or all of the portion of the substrate located in the weak magnetic region along the first direction in the first vapor deposition process is located in the strong magnetic region.
[0083] Furthermore, the moving component is connected to multiple magnetic units. Instead of driving the first support component and the second support component to move, the portion of the substrate located in the weak magnetic region during the first vapor deposition process is partially or entirely located in the strong magnetic region. This simplifies the structure of the vapor deposition apparatus and reduces maintenance costs.
[0084] Figure 10 The diagram shown is a schematic flow chart of a vapor deposition method provided in another embodiment of this application. Figure 7 Extending from the illustrated embodiment Figure 10 The illustrated embodiment will be described in detail below. Figure 10 The illustrated embodiments and Figure 7 The differences between the embodiments shown are not repeated here, and the similarities are not repeated here.
[0085] like Figure 10 As shown, step S700 may include the following steps.
[0086] In step S1000, after the substrate completes the first vapor deposition process, the multiple magnetic units driven by the moving component move so that the magnetic units move a first preset distance along the first direction.
[0087] In some embodiments, the first dimension W1 is greater than or equal to the second dimension W2. The first preset distance is greater than or equal to the second dimension W2 and less than or equal to the first dimension W1. This configuration minimizes the distance the magnetic unit moves along the first direction and completely transforms the area corresponding to the original weak magnetic region along the first direction in the first vapor deposition process into the area corresponding to the strong magnetic region, thereby improving production speed and deposition efficiency.
[0088] Figure 11 The diagram shown is a bottom view of a magnetic suction assembly provided in another embodiment of this application.
[0089] like Figure 11 As shown, multiple magnetic attraction units 140 are also arranged at intervals along a second direction X2, which is perpendicular to the first direction X1. The dimension of the magnetic attraction unit 140 along the second direction X2 is a third dimension W3, and the interval between adjacent magnetic attraction units 140 along the second direction X2 is a fourth dimension W4.
[0090] The moving component 15 is also used to drive multiple magnetic units 140 to move after the first vapor deposition process, so that the magnetic units 140 move a second preset distance along the second direction X2. The second preset distance is greater than zero and less than an integer multiple of the sum of the third dimension W3 and the fourth dimension W4.
[0091] The first support component 12 is used to limit the edge of the mask 30 at least along the first direction X1 and the second direction X2. This is to prevent the mask 30 from shifting relative to the first support component 12 along the first direction X1 and the second direction X2 due to the relative movement of the magnetic units 140 when the moving component 15 drives the plurality of magnetic units 140 to move. Exemplarily, the first support component 12 can also be used to limit the edge of the mask 30 along the first direction X1, the second direction X2, and the third direction X3 described below.
[0092] The second support component 13 is used to limit the edge of the substrate 20 at least along the first direction X1 and the second direction X2. This prevents the substrate 20 from shifting relative to the second support component 13 along the first direction X1 and the second direction X2 due to the relative movement of the magnetic attraction units 140 when the moving component 15 drives the plurality of magnetic attraction units 140 to move. Exemplarily, the second support component 13 can also be used to limit the edge of the substrate 20 along the first direction X1, the second direction X2, and the third direction X3 described below.
[0093] Since the multiple magnetic units 140 are also spaced apart along the second direction X2, adjacent magnetic units 140 are also spaced apart along the second direction X2. After the first vapor deposition process, the multiple magnetic units 140 are moved by the moving component 15, so that the magnetic units 140 move a second preset distance along the second direction X2. The second preset distance is greater than zero and less than an integer multiple of the sum of the third dimension W3 and the fourth dimension W4. Since when the second preset distance is equal to zero or equal to an integer multiple of the sum of the third dimension W3 and the fourth dimension W4, the portion of the substrate 20 located in the weak magnetic region along the second direction X2 in the first vapor deposition process is still located in the weak magnetic region, this arrangement can make part or all of the portion of the substrate 20 located in the weak magnetic region along the second direction X2 in the first vapor deposition process located in the strong magnetic region.
[0094] Exemplarily, multiple magnetic units are uniformly arranged along a second direction. Exemplarily, the shape of the magnetic units may include a cube or a cylinder. Exemplarily, the first direction is parallel to the horizontal direction. Exemplarily, the second direction is parallel to the horizontal direction.
[0095] In the vapor deposition apparatus provided in this embodiment, multiple magnetic suction units are also arranged at intervals along a second direction, which is perpendicular to the first direction. This helps to make the magnetic force on the mask more uniform in the second direction, thereby improving the vapor deposition effect.
[0096] Furthermore, the size of the magnetic unit along the second direction is the third size, and the spacing between adjacent magnetic units along the second direction is the fourth size. After the first vapor deposition process, the moving component drives multiple magnetic units to move so that the magnetic units move a second preset distance along the second direction. The second preset distance is greater than zero and less than an integer multiple of the sum of the third and fourth sizes, so that part of the portion of the substrate located in the weak magnetic region along the second direction in the first vapor deposition process is located in or is located in the strong magnetic region.
[0097] Figure 12 The diagram shown is a schematic flow chart of a vapor deposition method provided in another embodiment of this application. Figure 10 Extending from the illustrated embodiment Figure 12 The illustrated embodiment will be described in detail below. Figure 12 The illustrated embodiments and Figure 10 The differences between the embodiments shown are not repeated here, and the similarities are not repeated here.
[0098] like Figure 12 As shown, step S700 may also include the following steps.
[0099] In step S1200, after the substrate completes the first vapor deposition process, the multiple magnetic units driven by the moving component move so that the magnetic units move a second preset distance along the second direction.
[0100] In some embodiments, such as Figure 9 As shown, the process chamber 11 has an opening 111. The opening 111 communicates with the process chamber 110. The vapor deposition apparatus 10 also includes a hollow sealing tube 17. One end of the hollow sealing tube 17 is sealed to the edge of the opening 111.
[0101] The moving assembly 15 includes a drive unit 150 and a moving unit 151. The drive unit 150 is sealed to the other end of the hollow sealing tube 17. The drive unit 150 has a drive section 1500, which extends into the process chamber 110 through the hollow sealing tube 17 and the opening 111. The moving unit 151 is connected to the drive section 150 and a plurality of magnetic suction units 140, and drives the plurality of magnetic suction units 140 to move under the drive of the drive section 1500.
[0102] For example, the hollow sealing tube 17 may include a bellows, such as a metal bellows. For example, the number of hollow sealing tubes may be multiple.
[0103] For example, the drive unit may include one or more of the following drive structures: gear set, sprocket chain, lead screw guide, cylinder, motor and crank slider.
[0104] In some implementations, the drive unit 150 may include one or more linear motors. The drive section 1500 may be the output end of the linear motor. The moving unit 151 may be a connector for connecting the drive unit 150 and the plurality of magnetic attraction units 140. The output end of the linear motor drives the connector to move, thereby causing the connector to drive the magnetic attraction units to move.
[0105] In other implementations, the drive unit may include a lead screw and a slider sleeved on the lead screw. The moving unit may include a connector connected to the slider and multiple magnetic units. The direction of movement of the magnetic units is the extension direction of the centerline axis of the lead screw. The lead screw drives the slider to move by rotation, thereby causing the connector to move the magnetic units.
[0106] Exemplarily, the drive unit may be disposed within the process cavity. Exemplarily, the moving unit may be connected to the side of the magnetic unit opposite to the second support assembly. Exemplarily, the moving unit may be connected to a support plate, for example, to the side of the support plate opposite to the magnetic unit.
[0107] The vapor deposition apparatus provided in this embodiment has an open process chamber. The moving assembly includes a drive unit and a moving unit. One end of a hollow sealing tube is sealed to the edge of the opening, and the other end is sealed to the drive unit. The drive unit extends into the process chamber through the hollow sealing tube and the opening. The moving unit is connected to the drive unit and multiple magnetic suction units, and drives the multiple magnetic suction units to move under the drive of the drive unit. The structure is simple, low-cost, and easy to implement. Furthermore, the main part of the drive unit is located outside the process chamber, which can reduce the contamination of the process chamber by particles generated during operation.
[0108] In some embodiments, such as Figure 9 As shown, the vapor deposition apparatus 10 also includes a lifting assembly 18.
[0109] The lifting assembly 18 is connected to the moving assembly 15 and can be used to drive the moving assembly 15 to reciprocate along a third direction X3, so that the moving assembly 15 can move multiple magnetic units 140 closer to or away from the substrate 20. The lifting assembly 18 can also be used to drive the moving assembly 15 to reciprocate along a third direction X3, so that the moving assembly 15 can move multiple magnetic units 140 closer to or away from the mask 30.
[0110] For example, the lifting assembly can be located within the process chamber. The lifting assembly can also be located on the ground or on a rack.
[0111] In some applications, when pressing the magnetic assembly 14, substrate 20, and mask 30 together, the magnetic assembly 14 needs to be close to the substrate 20 or mask 30. By providing a lifting assembly 18, the pressing of the magnetic assembly 14, substrate 20, and mask 30 can be facilitated. Exemplarily, the lifting assembly may include one or more combinations of the following structures: gear set, sprocket chain, lead screw guide, cylinder, motor, and crank slider.
[0112] For example, the third direction X3 can be perpendicular to the first direction X1 or the second direction X2.
[0113] The vapor deposition apparatus provided in this embodiment also includes a lifting component, which is connected to a moving component and is used to drive the moving component to reciprocate along a third direction, so that the moving component can move multiple magnetic units closer to or away from the substrate and / or mask, so that the magnetic components can be pressed against the substrate and mask.
[0114] In some embodiments, such as Figure 9 As shown, the vapor deposition apparatus 10 also includes a first pressing assembly 190. The first pressing assembly 190 is connected to the first support assembly 12 and is used to drive the first support assembly 12 to reciprocate along a third direction X3, so that the mask 30 approaches or moves away from the substrate 20. It can also move the mask 30 approach or move away from the magnetic suction assembly 14, so as to press the mask with the magnetic suction assembly and the substrate.
[0115] In some embodiments, such as Figure 9 As shown, the vapor deposition apparatus 10 also includes a second pressing assembly 191. The second pressing assembly 191 is connected to the second support assembly 13 and is used to drive the second support assembly 13 to reciprocate along a third direction X3, so that the substrate 20 moves closer to or away from the mask 30. It can also move the substrate 20 closer to or away from the magnetic suction assembly 14, so as to press the substrate with the magnetic suction assembly and the mask.
[0116] In some embodiments, such as Figure 9 As shown, the vapor deposition apparatus 10 also includes a third pressing assembly 192. The third pressing assembly 192 is used to press the edge of the substrate 20 against the second support assembly 13. The third pressing assembly 192 and the second support assembly 13 cooperate with each other to clamp the edge of the substrate 20, thereby limiting and fixing the substrate 20.
[0117] In some embodiments, such as Figure 8 and Figure 11 As shown, the magnetic poles of adjacent magnetic units 140 are opposite. For example, in adjacent magnetic units, one magnetic unit is the N pole and the other is the S pole. This arrangement causes the magnetic lines of force to form a closed loop at the gap between the magnetic units, making the magnetic field more concentrated on the mask and significantly improving the effective adsorption force.
[0118] In some embodiments, such as Figure 1 and Figure 9 As shown, the vapor deposition apparatus 10 also includes a cooling assembly 193. The cooling assembly 193 is disposed adjacent to the magnetic suction assembly 14. The cooling assembly 193 may also be disposed adjacent to the second support assembly 13.
[0119] The cooling component 193 can be used to cool the magnetic component 14 to prevent the heat generated by the magnetic component 14 from causing the substrate 20 to expand and affecting the alignment accuracy of the substrate and the mask.
[0120] The cooling component 193 can also directly cool the substrate 20 to prevent the substrate 20 from expanding and affecting the alignment accuracy between the substrate and the mask.
[0121] Exemplarily, the cooling assembly has a fluid channel. The fluid channel is used for the flow of coolant. The coolant carries away heat by flowing in the fluid channel. Exemplarily, the cooling assembly may also be disposed between the magnetic assembly and the second support assembly. Exemplarily, the cooling assembly may be disposed around the magnetic assembly.
[0122] The vapor deposition apparatus provided in this embodiment also includes a cooling component, which is arranged adjacent to the magnetic suction component or adjacent to the second support component, so as to avoid the substrate from affecting the alignment accuracy of the substrate and the mask due to thermal expansion.
[0123] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “featuring,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.
[0124] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.
[0125] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.
[0126] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.
Claims
1. A vapor deposition apparatus, characterized in that, For performing at least two vapor deposition processes on a substrate, wherein the vapor deposition apparatus includes: A process cavity having a process chamber for accommodating the substrate and the photomask; A first support component is used to support the edge of the photomask and limit the edge of the photomask; A second support assembly, at least a portion of which is located on one side of the first support assembly, is used to support the edge of the substrate, so that the substrate is located on one side of the photomask, and to limit the edge of the substrate. A magnetic suction component is located on the side of the second support component opposite to the first support component, and is used to allow the mask to be adsorbed onto the side of the substrate away from the magnetic suction component. A movable component, disposed in the process cavity and connected to the magnetic component and / or to the first support component and the second support component, is used to drive the magnetic component to move and / or drive the first support component and the second support component to move after the first vapor deposition process, so that the position of the orthographic projection of the magnetic component on the substrate is different in at least two of the vapor deposition processes.
2. The vapor deposition apparatus according to claim 1, characterized in that, The magnetic attraction assembly includes multiple magnetic attraction units, which are spaced apart on the side of the second support assembly away from the first support assembly. The multiple magnetic attraction units are used to attract the mask to the side of the substrate away from the magnetic attraction units. When multiple magnetic units cause the mask to adhere to the side of the substrate away from the magnetic units, the area corresponding to the orthographic projection of the magnetic unit on the substrate is a strong magnetic area, and the area corresponding to the orthographic projection of the interval between adjacent magnetic units on the substrate is a weak magnetic area. The moving component is used to drive the plurality of magnetic suction units to move and / or drive the first support component and the second support component to move after the first vapor deposition process, so that at least a portion of the portion of the substrate located in the weak magnetic region during the first vapor deposition process is located in the strong magnetic region.
3. The vapor deposition apparatus according to claim 2, characterized in that, The plurality of magnetic attraction units are arranged at intervals along a first direction, the size of the magnetic attraction unit along the first direction is a first size, and the size of the interval between adjacent magnetic attraction units along the first direction is a second size; The moving component is connected to a plurality of magnetic units and is used to drive the plurality of magnetic units to move after the first vapor deposition process, so that the magnetic units move a first preset distance along the first direction, wherein the first preset distance is greater than zero and less than an integer multiple of the sum of the first size and the second size; The first support component is used to limit the edge of the mask at least along the first direction; The second support component is used to limit the edge of the substrate at least along the first direction.
4. The vapor deposition apparatus according to claim 3, characterized in that, The first dimension is greater than or equal to the second dimension; The first preset distance is greater than or equal to the second dimension, and less than or equal to the first dimension.
5. The vapor deposition apparatus according to claim 3, characterized in that, The plurality of magnetic attraction units are also arranged at intervals along a second direction, which is perpendicular to the first direction, wherein the dimension of the magnetic attraction unit along the second direction is a third dimension, and the dimension of the interval between adjacent magnetic attraction units along the second direction is a fourth dimension; The moving component is also used to drive multiple magnetic units to move after the first vapor deposition process, so that the magnetic units move a second preset distance along the second direction, the second preset distance being greater than zero and less than an integer multiple of the sum of the third size and the fourth size; The first support component is used to limit the edge of the mask at least along the first direction and the second direction; The second support component is used to limit the edge of the substrate at least along the first direction and the second direction.
6. The vapor deposition apparatus according to claim 3, characterized in that, The process cavity has an opening, and the opening communicates with the process chamber. The vapor deposition apparatus also includes: A hollow sealing tube, one end of which is sealed to the edge of the opening; The moving component includes: A drive unit is sealed to the other end of the hollow sealing tube. The drive unit has a drive part that extends into the process chamber through the hollow sealing tube and the opening. The moving unit is connected to the driving unit and the plurality of magnetic suction units, and drives the plurality of magnetic suction units to move under the drive of the driving unit.
7. The vapor deposition apparatus according to claim 3, characterized in that, Also includes: A lifting assembly is disposed in the process cavity and connected to the moving assembly, for driving the moving assembly to reciprocate along a third direction, so that the moving assembly moves the plurality of magnetic suction units closer to or away from the substrate and / or the mask.
8. The vapor deposition apparatus according to any one of claims 2 to 7, characterized in that, The magnetic poles of adjacent magnetic units are opposite.
9. The vapor deposition apparatus according to any one of claims 1 to 7, characterized in that, Also includes: A cooling component is disposed adjacent to the magnetic component and / or the second support component.
10. A vapor deposition method, characterized in that, The vapor deposition apparatus according to any one of claims 1 to 9, wherein the vapor deposition method comprises: After the first vapor deposition process is completed on the substrate, the moving component of the vapor deposition apparatus drives the magnetic component of the vapor deposition apparatus to move and / or drives the first support component and the second support component of the vapor deposition apparatus to move, so that the position of the orthographic projection of the magnetic component on the substrate is different in at least two vapor deposition processes. The substrate is subjected to a second vapor deposition process.