Thin film deposition apparatus and display panel production system

Abstract

This application provides a thin-film deposition equipment and a display panel production system. The thin-film deposition equipment includes a reaction device, a vacuum pump, a protection device, and a control device. The reaction device has a reaction chamber, and the vacuum pump is connected to the reaction device. The vacuum pump includes a first port, which communicates with the reaction chamber through a first tube. The vacuum pump is used to evacuate the reaction chamber through the first port. The protection device is connected between the first port and the first tube. The protection device has a first operating state and a second operating state. In the first operating state, the protection device connects the vacuum pump and the first tube; in the second operating state, the protection device disconnects the vacuum pump and the first tube. The control device is used to control the protection device to execute either the first operating state or the second operating state according to the operating state of the vacuum pump. According to this application, the production cycle time and product yield of the thin-film deposition equipment can be effectively improved.

Description

Technical Field

[0001] This application relates to the field of display panel manufacturing technology, and in particular to a thin film deposition equipment and a display panel manufacturing system. Background Technology

[0002] In display technology, display panels are mainly divided into two mainstream technologies: liquid crystal display panels and organic self-emissive display panels. Among them, organic self-emissive display panels use organic electroluminescent materials. When current passes through the organic electroluminescent materials, the materials emit light, thereby realizing the display function of the display panel.

[0003] Thin-film deposition equipment, such as chemical vapor deposition (CVD), is commonly used to fabricate display panels. The production cycle time and product yield of thin-film deposition equipment directly affect the overall economic efficiency of display panels. Therefore, improving the production cycle time and product yield of thin-film deposition equipment is an ongoing research direction in display panel manufacturing technology. Summary of the Invention

[0004] In view of the above problems, this application provides a thin film deposition equipment and a display panel production system, which can effectively improve the production cycle time and product yield of the thin film deposition equipment.

[0005] In a first aspect, embodiments of this application provide a thin film deposition apparatus, which includes a reaction device, a vacuum pump, a protection device, and a control device. The reaction device has a reaction chamber, and the vacuum pump is connected to the reaction device. The vacuum pump includes a first port, which is connected to the reaction chamber through a first tube. The vacuum pump is used to evacuate the reaction chamber through the first port.

[0006] A protective device is connected between the first port and the first tube body. The protective device has a first operating state and a second operating state. In the first operating state, the protective device connects the vacuum pump and the first tube body; in the second operating state, the protective device disconnects the vacuum pump and the first tube body. A control device is connected to the protective device and the vacuum pump. The control device is used to control the protective device to execute either the first operating state or the second operating state according to the operating state of the vacuum pump.

[0007] In some embodiments of the first aspect, the thin film deposition apparatus further includes a support member, through which a protective device is connected to the first port.

[0008] In some embodiments of the first aspect, the thin film deposition apparatus further includes a sealing component. The sealing component is connected between the support component and the protective device, and / or, the sealing component is connected between the support component and the first port.

[0009] In some embodiments of the first aspect, the thin film deposition apparatus further includes a cleaning device, and the vacuum pump further includes a second port, the cleaning device being connected to the second port, the cleaning device being used to introduce gas into the interior of the vacuum pump through the second port.

[0010] In some embodiments of the first aspect, the cleaning device is also connected to the protection device, and the cleaning device is also used to input gas into the protection device. The control device is used to control the connection and disconnection of the gas path between the protection device and the cleaning device according to the operating status of the vacuum pump. Wherein, when the gas path between the protection device and the cleaning device is disconnected, the protection device is in a first operating state; when the gas path between the protection device and the cleaning device is connected, the protection device is in a second operating state.

[0011] In some embodiments of the first aspect, the operating state includes the vacuum pump being turned on or off, the control device being configured to control the protection device to perform a first operating state when the vacuum pump is turned on, and to control the protection device to perform a second operating state when the vacuum pump is turned off.

[0012] In some embodiments of the first aspect, the operating state includes the operating parameters of the vacuum pump, the control device is configured to control the protection device to perform a first operating state when the operating parameters of the vacuum pump do not reach a preset threshold, and to control the protection device to perform a second operating state when the operating parameters of the vacuum pump reach the preset threshold.

[0013] In some embodiments of the first aspect, the control device includes a detection device and a control device. The detection device is connected to the vacuum pump and is used to detect the operating status of the vacuum pump in real time and generate a detection signal. The control device is connected to the detection device and the protection device. The control device is used to receive the detection signal and generate a control signal based on the detection signal. The control signal is used to control the protection device to perform a first operating state or a second operating state.

[0014] In some embodiments of the first aspect, the thin film deposition apparatus further includes a power supply, a vacuum pump, and protection devices that are all connected to the power supply.

[0015] Secondly, this application provides a display panel production system, which includes the thin film deposition equipment provided in any embodiment of the first aspect.

[0016] The thin film deposition equipment provided in this application, firstly, when the vacuum pump fails, the control device can detect the abnormality of the vacuum pump's operating status and control the protection device to switch from the first working state to the second working state, thereby quickly disconnecting the connection path between the reaction chamber and the vacuum pump. This action effectively prevents gas backflow into the reaction chamber due to back pressure, and avoids contamination of the reaction chamber by impurities such as dust, particles and water vapor.

[0017] Secondly, since the protection device and the vacuum pump are directly connected through the control device, the protection device can react quickly according to the operating status of the vacuum pump, which greatly shortens the control response path and reduces control delay. Thus, the connection path can be cut off in the early stage when the vacuum pump's operating status becomes abnormal, which significantly improves the response efficiency of the protection device.

[0018] Furthermore, the protection device is connected between the first port and the first tube body, which can effectively prevent impurities such as dust, particles and water vapor from entering the first tube body due to back pressure, thereby avoiding the phenomenon that impurities such as dust, particles and water vapor enter the reaction chamber from the first tube body when the equipment is started.

[0019] In addition, the control device can also achieve intelligent automatic linkage control by detecting the operating status of the vacuum pump in real time, which reduces the reliance on manual intervention and effectively prevents the risk of human judgment lag.

[0020] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description

[0021] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0022] Figure 1 This is a schematic diagram of the layout structure of a thin film deposition apparatus provided in some embodiments of this application;

[0023] Figure 2 This is a schematic diagram of the layout structure of another thin film deposition apparatus provided in some embodiments of this application;

[0024] Figure 3 A schematic diagram of the layout structure of another thin film deposition apparatus provided in some embodiments of this application;

[0025] Figure 4 A schematic diagram of the layout structure of another thin film deposition apparatus provided in some embodiments of this application;

[0026] Figure 5 This application provides a schematic diagram of the layout structure of another thin film deposition apparatus, which is also provided in some embodiments.

[0027] Figure 6This is a schematic diagram of the layout structure of another thin film deposition apparatus provided in some embodiments of this application.

[0028] The reference numerals in the detailed embodiments are as follows:

[0029] 10. Reaction apparatus;

[0030] 20. Vacuum pump; 21. First port; 22. Second port;

[0031] 30. First pipe body; 40. Protective device; 50. Control device; 60. Supporting component; 70. Sealing component;

[0032] 80. Cleaning device; 81. Second pipe body; 82. Third pipe body; 83. Switching component;

[0033] 90. Power supply. Detailed Implementation

[0034] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0035] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used in the specification of this application is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, rather than to describe a specific order or hierarchy.

[0036] In this application, the reference to "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment that is mutually exclusive with other embodiments.

[0037] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "attachment" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0038] In this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, in this application, the character " / " generally indicates that the preceding and following related objects have an "or" relationship.

[0039] In the embodiments of this application, the same reference numerals denote the same components, and for the sake of brevity, detailed descriptions of the same components are omitted in different embodiments. It should be understood that the thickness, length, width, and other dimensions of various components in the embodiments of this application shown in the accompanying drawings, as well as the overall thickness, length, width, and other dimensions of the integrated device, are merely illustrative and should not constitute any limitation on this application.

[0040] In this application, "multiple" means two or more (including two).

[0041] In this application, the term "parallel" includes not only the case of absolute parallelism, but also the case of approximate parallelism as commonly understood in engineering; similarly, "perpendicular" includes not only the case of absolute perpendicularity, but also the case of approximate perpendicularity as commonly understood in engineering.

[0042] In display technology, display panels are mainly divided into two mainstream technologies: liquid crystal display panels and organic self-emissive display panels. Among them, organic self-emissive display panels use organic electroluminescent materials. When current passes through the organic electroluminescent materials, the materials emit light, thereby realizing the display function of the display panel.

[0043] Thin-film deposition equipment, such as chemical vapor deposition (CVD), is commonly used to fabricate display panels. The production cycle time and product yield of thin-film deposition equipment directly affect the overall economic efficiency of display panels. Therefore, improving the production cycle time and product yield of thin-film deposition equipment is an ongoing research direction in display panel manufacturing technology.

[0044] Thin film deposition equipment includes a reaction device and a vacuum pump. The reaction device has a reaction chamber, and the vacuum pump is connected to the reaction device and is used to evacuate the reaction chamber to improve the quality of thin film deposition.

[0045] However, if the vacuum pump malfunctions, it will quickly generate back pressure, allowing impurities such as dust, particles, and moisture to enter the reaction chamber and contaminate it, affecting product quality. Furthermore, cleaning the reaction chamber is time-consuming and labor-intensive, not only impacting production speed but also increasing costs to some extent.

[0046] Based on the above considerations, this application designs a thin film deposition apparatus, which includes a reaction device, a vacuum pump, a protection device, and a control device. The reaction device has a reaction chamber, and the vacuum pump is connected to the reaction device. The vacuum pump includes a first port, which is connected to the reaction chamber through a first tube. The vacuum pump is used to evacuate the reaction chamber through the first port.

[0047] A protective device is connected between the first port and the first tube body. The protective device has a first operating state and a second operating state. In the first operating state, the protective device connects the vacuum pump and the first tube body; in the second operating state, the protective device disconnects the vacuum pump and the first tube body. A control device is connected to the protective device and the vacuum pump. The control device is used to control the protective device to execute either the first operating state or the second operating state according to the operating state of the vacuum pump.

[0048] First, when the vacuum pump stops, the control device can detect the abnormality in the operation of the vacuum pump and control the protection device to switch from the first working state to the second working state, thereby quickly disconnecting the connection path between the reaction chamber and the vacuum pump. This action effectively prevents gas from flowing back into the reaction chamber due to back pressure, and avoids contamination of the reaction chamber by impurities such as dust, particles and water vapor.

[0049] Secondly, since the protection device and the vacuum pump are directly connected through the control device, the protection device can react quickly according to the operating status of the vacuum pump, which greatly shortens the control response path and reduces control delay. Thus, the connection path can be cut off in the early stage when the vacuum pump's operating status becomes abnormal, which significantly improves the response efficiency of the protection device.

[0050] Furthermore, the protection device is connected between the first port and the first tube body, which can effectively prevent impurities such as dust, particles and water vapor from entering the first tube body due to back pressure, thereby avoiding the phenomenon that impurities such as dust, particles and water vapor enter the reaction chamber from the first tube body when the equipment is started.

[0051] In addition, the control device can also achieve intelligent automatic linkage control by detecting the operating status of the vacuum pump in real time, which reduces the reliance on manual intervention and effectively prevents the risk of human judgment lag.

[0052] Thus, the above technical solution can effectively reduce the risk of contamination of the reaction chamber due to vacuum pump failure, thereby helping to reduce the overall downtime of the equipment during production and improve the production cycle and product yield of the thin film deposition equipment.

[0053] The thin film deposition apparatus provided in the embodiments of this application will be described below with reference to the accompanying drawings. Figure 1 This is a schematic diagram of the layout structure of a thin film deposition apparatus provided in some embodiments of this application.

[0054] refer to Figure 1 This application provides a thin film deposition apparatus, which includes a reaction device 10, a vacuum pump 20, a protection device 40, and a control device 50. The reaction device 10 has a reaction chamber, and the vacuum pump 20 is connected to the reaction device 10. The vacuum pump 20 includes a first port 21, which is connected to the reaction chamber through a first tube 30. The vacuum pump 20 is used to evacuate the reaction chamber through the first port 21.

[0055] A protection device 40 is connected between the first port 21 and the first tube 30. The protection device 40 has a first operating state and a second operating state. In the first operating state, the protection device 40 connects the vacuum pump 20 and the first tube 30. In the second operating state, the protection device 40 disconnects the vacuum pump 20 and the first tube 30. A control device 50 is connected to the protection device 40 and the vacuum pump 20. The control device 50 is used to control the protection device 40 to execute either the first operating state or the second operating state according to the operating state of the vacuum pump 20.

[0056] The reaction apparatus 10 is used to perform thin film deposition reaction. It has a reaction chamber inside to accommodate the substrate to be processed and to perform chemical or physical vapor deposition.

[0057] The first tube 30 is connected between the first port 21 of the vacuum pump 20 and the reaction chamber to form an air extraction channel between the vacuum pump 20 and the reaction chamber.

[0058] Optionally, the vacuum pump 20 may be, but is not limited to, a dry screw vacuum pump 20 or a scroll dry pump, etc.

[0059] Optionally, the first tube 30 can be a corrosion-resistant stainless steel corrugated tube or a rigid vacuum tube, with an inner lining to enhance sealing performance.

[0060] The protection device 40 is used to cut off or open the gas path connection between the vacuum pump 20 and the reaction chamber under specific operating conditions. The protection device 40 has a first operating state and a second operating state, wherein the first operating state indicates that the valve body is in the open position and the gas path between the vacuum pump 20 and the reaction chamber is connected; the second operating state indicates that the valve body is in the closed position and the gas path between the vacuum pump 20 and the reaction chamber is disconnected.

[0061] The protective device 40 can be directly connected to the vacuum pump 20, or it can be confined to the vacuum pump 20 by other components. As an example, the connection between the protective device 40 and the vacuum pump 20 can be, but is not limited to, bolt connection, snap-fit, or riveting.

[0062] The protective device 40 can be directly connected to the first pipe body 30, or it can be restricted to the first pipe body 30 by other components. As an example, the connection method between the protective device 40 and the first pipe body 30 can be, but is not limited to, bolt connection, snap-fit ​​or riveting.

[0063] Optionally, the protection device 40 may include, but is not limited to, mechanical valves, electrically controlled valves, or pneumatic valves.

[0064] Preferably, the protection device 40 includes a solenoid valve, which has a fast response speed and high control accuracy.

[0065] In some examples, the protection device 40 includes a valve body and a valve core. The valve body has an evacuation channel, and the valve core is movably disposed inside the valve body. A control component can drive the valve core to move via electromagnetic effect. Specifically, when the protection device 40 is in a first operating state, the valve core is located outside the evacuation channel, and the vacuum pump 20 and the reaction chamber are connected through the evacuation channel. When the protection device 40 is in a second operating state, the valve core is located inside the evacuation channel, cutting off the connection between the vacuum pump 20 and the reaction chamber.

[0066] Of course, the protection device 40 provided in this application embodiment is not limited to the structure described above. Any structure that can realize the connection and disconnection of the gas passage between the vacuum pump 20 and the first tube 30 is acceptable.

[0067] The control device 50 can monitor the operating status of the vacuum pump 20 in real time. The operating status of the vacuum pump 20 includes, but is not limited to, the opening or closing of the vacuum pump 20, the rotation speed of the vacuum pump 20, the current of the vacuum pump 20, the voltage of the vacuum pump 20, and abnormal alarm information of the vacuum pump 20.

[0068] For example, when the control device 50 detects that the vacuum pump 20 is turned off, such as when the vacuum pump 20 malfunctions, the control device 50 will immediately issue a control command to drive the protection device 40 to switch from the first working state to the second working state, thereby protecting the reaction chamber.

[0069] Alternatively, when the control device 50 detects that the rotational speed of the vacuum pump 20 has reached a preset speed threshold, the control device 50 will immediately issue a control command to drive the protection device 40 to switch from the first working state to the second working state, thereby protecting the reaction chamber. The preset speed threshold can be understood as a relatively small rotational speed value. The rotational speed of the vacuum pump 20 during normal operation will be greater than this preset speed threshold. In other words, when the rotational speed of the vacuum pump 20 is less than or equal to the preset speed threshold, it indicates that the operation of the vacuum pump 20 has malfunctioned.

[0070] Optionally, the control device 50 may be equipped with a signal acquisition module and a control logic module to achieve the above functions.

[0071] Optionally, the control device 50 can be implemented by a microcontroller or an embedded microcontroller, and is equipped with a human-machine interface for operation and status viewing.

[0072] Alternatively, the control device 50 may be integrated into the vacuum pump 20; in other words, the control device 50 and the vacuum pump 20 may be a single unit.

[0073] First, when the vacuum pump 20 stops, the control device 50 can detect the abnormality in the operation of the vacuum pump 20 and control the protection device 40 to switch from the first working state to the second working state, thereby quickly disconnecting the connection path between the reaction chamber and the vacuum pump 20. This action effectively prevents gas from flowing back into the reaction chamber due to back pressure, and avoids contamination of the reaction chamber by impurities such as dust, particles and water vapor.

[0074] Secondly, since the protection device 40 and the vacuum pump 20 are directly connected through the control device 50, the protection device 40 can react quickly according to the operating status of the vacuum pump 20, which greatly shortens the control response path and reduces the control delay. Thus, the connection path can be cut off in the early stage when the operating status of the vacuum pump 20 is abnormal, which significantly improves the response efficiency of the protection device 40.

[0075] Furthermore, the protection device 40 is connected between the first port 21 and the first tube 30, which can effectively prevent impurities such as dust, particles and water vapor from entering the first tube 30 due to back pressure, thereby avoiding the phenomenon that impurities such as dust, particles and water vapor enter the reaction chamber from the first tube 30 when the equipment is started.

[0076] In addition, the control device 50 can also realize intelligent automatic linkage control by real-time detection of the operating status of the vacuum pump 20, which reduces the reliance on manual intervention and effectively prevents the risk of human judgment lag.

[0077] Thus, the above technical solution can effectively reduce the risk of contamination of the reaction chamber due to the failure of vacuum pump 20, thereby helping to reduce the overall downtime of the equipment during the production process and improve the production cycle and product yield of the thin film deposition equipment.

[0078] Figure 2 This is a schematic diagram of the layout structure of another thin film deposition apparatus provided in some embodiments of this application.

[0079] Continue to refer to Figure 2 In some embodiments, the thin film deposition apparatus further includes a support member 60, through which the protection device 40 is connected to the first port 21.

[0080] The support component 60 supports the protection device 40, which not only facilitates the installation of the protection components but also improves the mechanical stability of the protection device 40. The support component 60 also separates the protection device 40 from the vacuum pump 20 to reduce vibration damage to the vacuum pump 20 caused by the protection device 40 during the switching between the first and second operating states.

[0081] Optionally, the support component 60 may be made of materials such as stainless steel, aluminum alloy, or titanium alloy, depending on the application environment.

[0082] In some embodiments, an elastic member is provided between the support member 60 and the vacuum pump 20 to further enhance the shock resistance between the support member 60 and the vacuum pump 20 and reduce the risk of damage to the vacuum pump 20.

[0083] In some embodiments, an elastic member is provided between the support member 60 and the protective device 40 to further enhance the shock resistance between the support member 60 and the protective device 40 and reduce the risk of damage to the protective device 40.

[0084] In some embodiments, the support member 60 is configured to be telescopic, allowing for adaptive adjustment in different device environments.

[0085] In some embodiments, the structure of the support component 60 may be integrated, and in addition to providing support, it may also include interfaces such as power lines 90 and signal lines required by the protection device 40, simplifying the wiring and installation of the system.

[0086] Figure 3 This is a schematic diagram of the layout structure of another thin film deposition apparatus provided in some embodiments of this application.

[0087] Continue to refer to Figure 3 In some embodiments, the thin film deposition apparatus further includes a sealing component 70 connected between the support component 60 and the protective device 40.

[0088] By providing a sealing component 70 between the protective device 40 and the support component 60, the risk of external impurities such as dust, particles, and water vapor penetrating into the interior of the thin film deposition equipment along the connection gap is reduced, and the sealing performance of the thin film deposition equipment can be significantly improved.

[0089] Optionally, the sealing component 70 may include, but is not limited to, a sealing ring, a metal corrugated gasket, a compression ring, or a flexible sealing sheet, and the structural form of the sealing component 70 may be determined according to the connection method between the protection device 40 and the support component 60.

[0090] For example, when the protective device 40 and the support member 60 adopt a threaded or flanged connection structure, the sealing member 70 can be disposed in the groove of the connection interface. When the protective device 40 and the support member 60 adopt a quick-clamp connection structure, an independent compression sealing structure can be provided to ensure that the connection surfaces fit tightly.

[0091] Optionally, the sealing component 70 may be made of materials such as fluororubber or polytetrafluoroethylene, depending on the application environment.

[0092] The number of sealing components 70 can be one or more, where "more" refers to two or more. For example, two sealing components 70 can be provided between the support component 60 and the protective device 40, and the two sealing components 70 are stacked along the direction from the support component 60 to the protective device 40 to form a "main seal + auxiliary seal" system to improve the overall sealing level.

[0093] In some embodiments, the sealing member 70 is connected between the support member 60 and the first port 21. By providing the sealing member 70 between the protection device 40 and the vacuum pump 20, the risk of external impurities such as dust, particles, and moisture seeping into the interior of the thin film deposition equipment along the connection gap is reduced, and the sealing performance of the thin film deposition equipment can be significantly improved.

[0094] Figure 4 This is a schematic diagram of the layout structure of another thin film deposition apparatus provided in some embodiments of this application.

[0095] Continue to refer to Figure 4 In some embodiments, the thin film deposition apparatus further includes a cleaning device 80, and the vacuum pump 20 further includes a second port 22, the cleaning device 80 being connected to the second port 22, the cleaning device 80 being used to blow air into the interior of the vacuum pump 20 through the second port 22.

[0096] The cleaning device 80 is used to purge and clean the inside of the vacuum pump 20. The gas input into the vacuum pump 20 by the cleaning device 80 can carry out the dust, particles or possible accumulated by-products deposited inside the vacuum pump 20, keep the internal cavity of the vacuum pump 20 unobstructed and clean, thereby ensuring the normal operation of the vacuum pump 20 and extending its service life.

[0097] In some examples, the cleaning device 80 may include a gas source for providing gas, wherein the gas may be, but is not limited to, an inert gas such as nitrogen or argon.

[0098] The cleaning device 80 can be directly connected to the vacuum pump 20, or it can be restricted to the vacuum pump 20 by other components.

[0099] In some examples, the cleaning device 80 can be connected to the second port 22 via the second tube 81.

[0100] Optionally, the second pipe body 81 can be a stainless steel corrugated pipe, a flexible hose, or a rigid pipe, which can be selected according to the actual application environment.

[0101] In some examples, the cleaning device 80 may also include a flow controller for regulating the flow rate of gas input from the cleaning device 80 to the interior of the vacuum pump 20.

[0102] Figure 5 This is a schematic diagram of the layout structure of another thin film deposition apparatus provided in some embodiments of this application.

[0103] Continue to refer to Figure 5 In some embodiments, the cleaning device 80 is also connected to the protection device 40, and the cleaning device 80 is also used to input gas into the protection device 40. The control device 50 is used to control the connection and disconnection of the gas path between the protection device 40 and the cleaning device 80 according to the operating status of the vacuum pump 20. Specifically, when the gas path between the protection device 40 and the cleaning device 80 is disconnected, the protection device 40 is in a first operating state; when the gas path between the protection device 40 and the cleaning device 80 is connected, the protection device 40 is in a second operating state.

[0104] The protection device 40 switches between the first and second working states by means of gas drive. This not only reduces the structural complexity of the protection device 40 itself and reduces costs, but also allows the existing cleaning device 80 to provide the protection device 40 with the gas to drive the protection device 40 to switch between the first and second working states. This further reduces the overall structural complexity of the thin film deposition equipment and further reduces costs.

[0105] For example, the protection device 40 may include a valve body, a valve core, and an elastic element. The valve body has an air extraction channel, the valve core is movably disposed inside the valve body, and the elastic element is connected between the valve core and the valve body. The gas input by the cleaning device 80 to the protection device 40 is used to drive the valve core to move towards the air extraction channel, and the elastic element is used to apply an elastic force away from the air extraction channel to the valve core.

[0106] Specifically, when the protection device 40 is in the first working state, the valve core is located outside the evacuation channel, and the vacuum pump 20 and the reaction chamber are connected through the evacuation channel; when the protection device 40 is in the second working state, the valve core is located inside the evacuation channel and the connection between the vacuum pump 20 and the reaction chamber is cut off.

[0107] In this embodiment, when the air path between the protection device 40 and the cleaning device 80 is disconnected, that is, the gas output by the cleaning device 80 cannot enter the valve body to drive the valve core to move, so that the valve core is located outside the air extraction channel, thereby putting the protection device 40 into the first working state.

[0108] When the gas path between the protection device 40 and the cleaning device 80 is connected, the gas output by the cleaning device 80 enters the valve body to drive the valve core to move, so that the valve core is located inside the gas extraction channel and the connection between the vacuum pump 20 and the reaction chamber is cut off, thereby putting the protection device 40 into the second working state.

[0109] The cleaning device 80 can be directly connected to the protection device 40, or it can be restricted to the protection device 40 by other components.

[0110] In some examples, the cleaning device 80 can be connected to the protection device 40 via the third tube 82.

[0111] Optionally, the third pipe body 82 can be a stainless steel corrugated pipe, a flexible hose, or a rigid pipe, which can be selected according to the actual application environment.

[0112] In some examples, a switch component 83 is provided on the third tube 82, and a control component is electrically connected to the switch component 83. The control device 50 is used to control the switch component 83 to open or close according to the operating status of the vacuum pump 20. When the switch component 83 is closed, the air passage between the protection device 40 and the cleaning device 80 is disconnected, and the protection device 40 is in a first working state; when the switch component 83 is open, the air passage between the protection device 40 and the cleaning device 80 is connected, and the protection device 40 is in a second working state.

[0113] In some embodiments, the operating state includes the vacuum pump 20 being turned on or off, and the control device 50 is configured to control the protection device 40 to perform a first operating state when the vacuum pump 20 is turned on, and to control the protection device 40 to perform a second operating state when the vacuum pump 20 is turned off.

[0114] Specifically, when the vacuum pump 20 is turned on, the protection device 40 is in the first working state, so that the vacuum pump 20 maintains gas path communication with the reaction chamber through the first port 21 and the first tube 30, thereby realizing continuous vacuuming operation of the reaction chamber, and the reaction chamber can maintain a vacuum state to meet the requirements of the thin film deposition process.

[0115] When the control device 50 detects that the vacuum pump 20 is shut down, for example, when the vacuum pump 20 malfunctions, the control device 50 will immediately control the protection device 40 to switch to the second working state, thereby quickly disconnecting the connection path between the reaction chamber and the vacuum pump 20. This action effectively prevents gas from flowing back into the reaction chamber due to back pressure, and avoids contamination of the reaction chamber by impurities such as dust, particles and water vapor.

[0116] The above technical solution configures the control device 50 to automatically control the protection device 40 to execute the first working state or the second working state based on the opening or closing of the vacuum pump 20. The logic is simple and can reduce the design complexity.

[0117] In some embodiments, the operating state includes the operating parameters of the vacuum pump 20. The control device 50 is configured to control the protection device 40 to perform a first operating state when the operating parameters of the vacuum pump 20 do not reach a preset threshold, and to control the protection device 40 to perform a second operating state when the operating parameters of the vacuum pump 20 reach the preset threshold.

[0118] For example, the operating parameters of the vacuum pump 20 include, but are not limited to, the speed, current, and voltage of the vacuum pump 20.

[0119] In some examples, the control device 50 is configured to control the protection device 40 to perform a first operating state when the rotational speed of the vacuum pump 20 does not reach a preset rotational speed threshold, and to control the protection device 40 to perform a second operating state when the rotational speed of the vacuum pump 20 reaches the preset rotational speed threshold.

[0120] In other words, when the control device 50 detects that the rotational speed of the vacuum pump 20 has reached a preset speed threshold, the control device 50 will immediately issue a control command to drive the protection device 40 to switch from the first working state to the second working state, thereby protecting the reaction chamber. The preset speed threshold can be understood as a relatively small rotational speed value. The rotational speed of the vacuum pump 20 during normal operation will be greater than this preset speed threshold. Therefore, when the rotational speed of the vacuum pump 20 is less than or equal to the preset speed threshold, it indicates that the operation of the vacuum pump 20 has malfunctioned.

[0121] In some examples, the control device 50 is configured to control the protection device 40 to perform a first operating state when the current of the vacuum pump 20 does not reach a preset current threshold, and to control the protection device 40 to perform a second operating state when the current of the vacuum pump 20 reaches the preset current threshold.

[0122] In other words, when the control device 50 detects that the current of the vacuum pump 20 reaches the preset current threshold, the control device 50 will immediately issue a control command to drive the protection device 40 to switch from the first working state to the second working state, thereby protecting the reaction chamber. The preset current threshold can be understood as a small current value. The current of the vacuum pump 20 during normal operation will be greater than this preset current threshold. That is, when the current of the vacuum pump 20 is less than or equal to the preset current threshold, it indicates that the operation of the vacuum pump 20 has malfunctioned.

[0123] In some examples, the control device 50 is configured to control the protection device 40 to perform a first operating state when the voltage of the vacuum pump 20 does not reach a preset voltage threshold, and to control the protection device 40 to perform a second operating state when the rotational speed of the vacuum pump 20 reaches a preset voltage threshold.

[0124] In other words, when the control device 50 detects that the rotational speed of the vacuum pump 20 reaches the preset voltage threshold, the control device 50 will immediately issue a control command to drive the protection device 40 to switch from the first working state to the second working state, thereby protecting the reaction chamber. The preset voltage threshold can be understood as a relatively small voltage value. The voltage of the vacuum pump 20 during normal operation will be greater than this preset voltage threshold. Therefore, when the voltage of the vacuum pump 20 is less than or equal to the preset voltage threshold, it indicates that the operation of the vacuum pump 20 has malfunctioned.

[0125] The above technical solution incorporates the operating parameters of the vacuum pump 20 into the control logic. When the operating parameters of the vacuum pump 20 are in an abnormal state or close to the critical fault zone, the control device 50 can judge the reliability of the operation of the vacuum pump 20 based on the real-time operating parameters. It can also control the protection device 40 to disconnect the connection path between the reaction chamber and the vacuum pump 20 in advance when the vacuum pump 20 fails. This can more effectively reduce the risk of gas backflow into the reaction chamber due to back pressure and avoid contamination of the reaction chamber by impurities such as dust, particles and water vapor.

[0126] The dynamic control method based on the operating parameters of vacuum pump 20 is more detailed, has better preventive capabilities, and can further improve response sensitivity.

[0127] In some embodiments, the operating state includes multiple operating parameters, including a first operating parameter and a second operating parameter. When the first operating parameter does not reach a first preset threshold and / or when the first operating parameter does not reach the first preset threshold, the protection device 40 is controlled to perform a first operating state. When the first operating parameter reaches the first preset threshold and the second operating parameter reaches the second preset threshold, the protection device 40 is controlled to perform a second operating state.

[0128] For example, the first operating parameter may be one of the rotational speed, current or voltage of the vacuum pump 20, and the second operating parameter may be one of the rotational speed, current or voltage of the vacuum pump 20, and the first operating parameter and the second operating parameter are different.

[0129] As an example, the first operating parameter is the rotational speed of the vacuum pump 20, and the first preset threshold is a preset rotational speed threshold; the second operating parameter is the current of the vacuum pump 20, and the first preset threshold is a preset current threshold.

[0130] The above technical solution uses multiple operating parameters to collaboratively determine the operating status of the vacuum pump 20, which can reduce the risk of misjudgment and thus reduce unnecessary downtime.

[0131] Of course, the embodiments of this application may not only use the two working parameters mentioned above to jointly determine the operating status of the vacuum pump 20, but may also use three, four or more working parameters to jointly determine the operating status of the vacuum pump 20 to further improve the judgment accuracy.

[0132] In some embodiments, the control device 50 includes a detection device and a control device. The detection device is connected to the vacuum pump 20 and is used to detect the operating status of the vacuum pump 20 in real time and generate a detection signal. The control device is connected to the detection device and the protection device 40. The control device is used to receive the detection signal and generate a control signal based on the detection signal. The control signal is used to control the protection device 40 to perform a first operating state or a second operating state.

[0133] The detection device is electrically connected to the vacuum pump 20, and can collect the operating status information of the vacuum pump 20 in real time and generate corresponding detection signals.

[0134] The detection device may include, but is not limited to, at least one of the following: current sensor, voltage detection module, temperature sensor, speed encoder, pressure sensor, operating status relay, Hall element, etc. These devices may be used individually or in combination to achieve comprehensive detection of the electrical status, mechanical operating status, and vacuum parameters of the vacuum pump 20.

[0135] The controller is electrically connected between the detection device and the protection device 40. It is responsible for receiving the detection signal output by the detection device and generating a corresponding control signal based on the detection signal.

[0136] The control device can be implemented in the form of a single-chip microcomputer module, an embedded microcontroller, an industrial control board, or a programmable logic circuit, but is not limited to.

[0137] In some embodiments, the detection device and the control device can be an integrated structure. For example, the detection device and the control device can be integrated into a single circuit board to form a unified module. For instance, mounting the detection device and the control device on a printed circuit board simultaneously helps to reduce the overall size and improve the structural compactness.

[0138] In some embodiments, the detection device and the control device can be separate structures. For example, the detection device is located on the vacuum pump 20, and the control device is located inside a separate control cabinet, connected by a signal line. This approach facilitates maintenance, upgrades, and expansion.

[0139] Figure 6 This is a schematic diagram of the layout structure of another thin film deposition apparatus provided in some embodiments of this application.

[0140] Continue to refer to Figure 6 In some embodiments, the thin film deposition apparatus also includes a power supply 90, with the vacuum pump 20 and protection device 40 connected together to the power supply 90. In other words, the power supply 90 may be integrated into the vacuum pump 20, and the protection device 40 may be powered by the power supply 90 on the vacuum pump 20.

[0141] This eliminates the need for a separate power supply 90 for the protection device 40, allowing the power supply 90 on the vacuum pump 20 to be used directly to power the protection device 40, which helps to simplify the overall structural complexity of the thin film deposition equipment.

[0142] In some embodiments, the thin film deposition apparatus further includes an exhaust gas treatment device, the vacuum pump 20 having a third port through which gas inside the vacuum pump 20 is discharged, the exhaust gas treatment device being connected to the third port, and the exhaust gas treatment device being used to treat the gas output from the vacuum pump 20 to reduce harmful impurities such as deposition byproducts in the gas.

[0143] In some embodiments, the thin film deposition apparatus further includes an exhaust fan connected between the third port and the exhaust gas treatment device, the exhaust fan being used to draw gas from the vacuum pump 20 to the exhaust gas treatment device.

[0144] According to some embodiments of this application, this application also provides a display panel production system, including thin film deposition equipment of any of the above schemes.

[0145] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions. All technical features and optional technical features of this application can be combined to form new technical solutions.

[0146] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and not to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and they should all be covered within the scope of the claims and specification of this application. In particular, as long as there is no structural conflict, the various technical features mentioned in the embodiments can be combined in any way. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A thin film deposition apparatus, characterized in that, include: A reaction apparatus having a reaction chamber; A vacuum pump is connected to the reaction apparatus. The vacuum pump includes a first port, which is connected to the reaction chamber through a first tube. The vacuum pump is used to evacuate the reaction chamber through the first port. A protection device is connected between the first port and the first tube body. The protection device has a first working state and a second working state. When the protection device is in the first working state, it connects the vacuum pump and the first tube body. When the protection device is in the second working state, it disconnects the vacuum pump and the first tube body. A control device is connected to the protection device and the vacuum pump. The control device is used to control the protection device to perform either the first working state or the second working state according to the operating state of the vacuum pump.

2. The thin film deposition apparatus according to claim 1, characterized in that, The thin film deposition apparatus also includes a support component, and the protection device is connected to the first port through the support component.

3. The thin film deposition apparatus according to claim 2, characterized in that, The thin film deposition equipment also includes a sealing component; The sealing component is connected between the support component and the protective device, and / or the sealing component is connected between the support component and the first port.

4. The thin film deposition apparatus according to claim 1, characterized in that, The thin film deposition apparatus further includes a cleaning device, and the vacuum pump further includes a second port, the cleaning device being connected to the second port, the cleaning device being used to input gas into the interior of the vacuum pump through the second port.

5. The thin film deposition apparatus according to claim 4, characterized in that, The cleaning device is also connected to the protection device, and the cleaning device is also used to input gas into the protection device; The control device is used to control the connection and disconnection of the air passage between the protection device and the cleaning device according to the operating status of the vacuum pump. When the air passage between the protection device and the cleaning device is disconnected, the protection device is in the first working state. When the air passage between the protection device and the cleaning device is connected, the protection device is in the second working state.

6. The thin film deposition apparatus according to claim 1, characterized in that, The operating status includes whether the vacuum pump is on or off; The control device is configured to control the protection device to perform the first operating state when the vacuum pump is turned on, and to control the protection device to perform the second operating state when the vacuum pump is turned off.

7. The thin film deposition apparatus according to claim 1, characterized in that, The operating status includes the operating parameters of the vacuum pump; The control device is configured to control the protection device to perform the first working state when the operating parameters of the vacuum pump do not reach a preset threshold, and to control the protection device to perform the second working state when the operating parameters of the vacuum pump reach the preset threshold.

8. The thin film deposition apparatus according to claim 1, characterized in that, The control device includes a detection device and a control device. The detection device is connected to the vacuum pump and is used to detect the operating status of the vacuum pump in real time and generate a detection signal. The controller is connected to the detection device and the protection device. The controller is used to receive the detection signal and generate a control signal based on the detection signal. The control signal is used to control the protection device to perform the first working state or the second working state.

9. The thin film deposition apparatus according to any one of claims 1-8, characterized in that, The thin film deposition equipment also includes a power supply, and the vacuum pump and the protection device are connected to the power supply.

10. A display panel production system, characterized in that, Includes the thin film deposition apparatus as described in any one of claims 1-9.

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