A gas decomposition apparatus, a gas decomposition method, and a vapor deposition apparatus

Abstract

This application provides a gas decomposition apparatus, a gas decomposition method, and a vapor deposition apparatus. The gas decomposition apparatus is disposed in a vapor deposition apparatus and includes a first chamber, a first tube, a second tube, and an electron emitter. The electron emitter emits high-speed electrons into the first chamber. The high-speed electrons emitted by the electron emitter collide with a first vapor deposition gas introduced into the first chamber through the first tube, thereby decomposing the first vapor deposition gas, which is in a molecular state. With this configuration, the high-speed electrons collide with the first vapor deposition gas introduced into the first chamber through the first tube, causing the first vapor deposition gas, which is in a molecular state, to decompose into an atomic state. The first vapor deposition gas in an atomic state and the second vapor deposition gas in an atomic state then react on the surface of the substrate to form an insulating film. This configuration can improve the forming effect of the insulating film on the substrate surface and improve the utilization rate of the vapor deposition gas.

Description

Technical Field

[0001] This application relates to the field of vapor deposition technology, specifically to a gas decomposition device, a gas decomposition method, and a vapor deposition apparatus. Background Technology

[0002] As is well known, chemical vapor deposition is a process that deposits solid thin films on the surface of a substrate through a gas-phase chemical reaction. It requires at least two vapor deposition gases to react to form an insulating film on the substrate surface. However, the vapor deposition gases injected into the vapor deposition apparatus are supplied in a molecular state with a large number of atoms bonded together. Some of the vapor deposition gases in the molecular state react on the substrate surface, resulting in poor forming effect of the insulating film on the substrate surface and low utilization rate of the vapor deposition gases. Summary of the Invention

[0003] In view of this, this application provides a gas decomposition apparatus to solve the problems of poor insulating film formation and low utilization rate of the vapor deposition gas due to the supply of the vapor deposition gas in a molecular state. This application also provides a gas decomposition method applicable to the above-mentioned gas decomposition apparatus. Furthermore, this application provides a vapor deposition apparatus including the above-mentioned gas decomposition apparatus.

[0004] To achieve the above objectives, this application provides the following technical solution:

[0005] A gas decomposition device, disposed in a vapor deposition apparatus, includes:

[0006] The first chamber has a first inlet end and a first outlet end. The first vapor deposition gas flows into the first chamber through the first inlet end and flows out of the first chamber through the first outlet end.

[0007] A first tube is connected to the first inlet end of the first chamber to introduce the first vapor deposition gas into the first chamber.

[0008] The second tube is connected to the first outlet end of the first chamber to exhaust the first vapor deposition gas located in the first chamber.

[0009] An electron emitter is connected to the interior of the first chamber via a connecting tube, and the electron emitter can emit high-speed electrons into the first chamber through the connecting tube. The high-speed electrons emitted by the electron emitter collide with the first vapor deposition gas introduced into the first chamber through the first tube, thereby decomposing the first vapor deposition gas in a molecular state.

[0010] Optionally, it may also include a reflector disposed in the first chamber capable of reflecting electrons, and the reflector and the electron emitter are respectively disposed on opposite sides of the first chamber.

[0011] Optionally, the electron emitter and the first inlet end are located on adjacent sidewalls of the first chamber, and the direction of movement of the electron emitted by the electron emitter is perpendicular to the direction of inflow of the first vapor deposition gas.

[0012] Optionally, the electron emitter and the first inlet end are located on opposite sidewalls of the first chamber, and the direction of movement of the electrons emitted by the electron emitter is opposite to the direction of inflow of the first vapor deposition gas.

[0013] Optionally, an anode mesh electrically connected to a power source is provided at the first outlet end of the first chamber.

[0014] Optionally, at least one first heating element is provided in the first chamber.

[0015] A gas decomposition method, applicable to any of the gas decomposition apparatuses described above, comprises at least the following steps:

[0016] When the electron emitter is turned on, the first vapor deposition gas flows into the first chamber through the first inlet end, and the high-speed electrons emitted by the electron emitter collide with the first vapor deposition gas to decompose the first vapor deposition gas.

[0017] When the high-speed electrons collide with the reflector, they will bounce off and collide with the first vapor deposition gas again, thereby decomposing the first vapor deposition gas again.

[0018] When the first heating element is turned on, the first vapor deposition gas located in the first chamber flows to the first heating element, and the first heating element generates heat to decompose the first vapor deposition gas.

[0019] When the power is turned on, the anode mesh is energized. When the first vapor-deposited gas after decomposition flows out from the outlet end of the first chamber, it will flow through the anode mesh. The anode mesh absorbs electrons mixed in the first vapor-deposited gas. The first vapor-deposited gas after decomposition flows out from the first outlet end, completing the decomposition process of the first vapor-deposited gas.

[0020] A vapor deposition apparatus includes a vapor deposition chamber and at least two gas decomposition devices located within the vapor deposition chamber, wherein at least one of the at least two gas decomposition devices is the aforementioned gas decomposition device, and the other of the at least two gas decomposition devices includes:

[0021] The second chamber has a second inlet end and a second outlet end. The second vapor deposition gas flows into the second chamber through the second inlet end and flows out of the second chamber through the second outlet end.

[0022] The third tube is connected to the second inlet end of the second chamber to introduce the second vapor deposition gas into the second chamber;

[0023] The fourth tube is connected to the second outlet end of the second chamber to exhaust the second vapor deposition gas located in the second chamber;

[0024] The second heating element is disposed in the second chamber. When in a heated state, the second heating element can heat and decompose the second vapor deposition gas in a molecular state.

[0025] Optionally, it also includes a flow divider plate located within the vapor deposition chamber, wherein the second tube is connected to the first tube group of the flow divider plate, and the fourth tube is connected to the second tube group of the flow divider plate, wherein:

[0026] In the flow direction of the first vapor deposition gas, the part where the second tube body connects to the first chamber is a first part with a gradually narrowing tube diameter;

[0027] And / or,

[0028] In the flow direction of the second vapor deposition gas, the part where the fourth tube connects to the second chamber is a second part with a gradually narrowing tube diameter.

[0029] Optional,

[0030] In the flow direction of the first vapor deposition gas, the part where the second tube body is connected to the flow divider plate is a third part with a gradually expanding tube diameter;

[0031] And / or,

[0032] In the flow direction of the second vapor deposition gas, the part where the fourth tube body is connected to the flow divider plate is a fourth part with a gradually expanding pipe diameter.

[0033] The gas decomposition apparatus provided in this application includes an electron emitter connected to a first chamber, which emits high-speed electrons into the first chamber. These high-speed electrons collide with the first vapor-deposited gas introduced into the first chamber through a first tube. The collision between the high-speed electrons and the first vapor-deposited gas causes the molecular-state first vapor-deposited gas to decompose into an atomic state. In this way, the atomic-state first vapor-deposited gas and the atomic-state second vapor-deposited gas react on the surface of the substrate to form an insulating film. This configuration can improve the forming effect of the insulating film on the substrate surface and increase the utilization rate of the vapor-deposited gas. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0035] Figure 1 This is a schematic diagram of the vapor deposition apparatus provided in this embodiment;

[0036] Figure 2 This is a cross-sectional view of a vapor deposition apparatus according to one embodiment;

[0037] Figure 3 This is a cross-sectional view of the vapor deposition apparatus in another embodiment.

[0038] Figures 1-3 middle:

[0039] 1-Evaporation equipment; 2-Substrate;

[0040] 11-Gas decomposition device; 12-Evaporation chamber; 13-Diverter plate;

[0041] 1101-First chamber, 1102-First tube body, 1103-Second tube body, 1104-Electron transmitter, 1105-Reflector, 1106-First heating element, 1107-Second chamber, 1108-Third tube body, 1109-Fourth tube body, 1110-Second heating element, 131-First tube group, 132-Second tube group. Detailed Implementation

[0042] This application provides a gas decomposition apparatus to solve the problems of poor insulating film formation and low utilization rate of the vapor deposition gas due to the supply of the gas in a molecular state. This application also provides a gas decomposition method applicable to the above-mentioned gas decomposition apparatus. Furthermore, this application provides a vapor deposition apparatus including the above-mentioned gas decomposition apparatus.

[0043] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0044] like Figures 1-3As shown, this application embodiment provides a gas decomposition device 11, which is disposed in a vapor deposition apparatus 1 to decompose vapor deposition gas in a molecular state into an atomic or ionic state. The gas decomposition device 11 includes a first chamber 1101, a first tube 1102, a second tube 1103, and an electron emitter 1104. The first chamber 1101 has a first inlet end and a first outlet end. The first vapor deposition gas flows into the first chamber 1101 through the first inlet end and flows out of the first chamber 1101 through the first outlet end. The first tube 1102 is connected to the first inlet end of the first chamber 1101 to introduce the first vapor deposition gas into the first chamber 1101. The second tube 1103... 103 is connected to the first outlet end of the first chamber 1101 to export the first vapor deposition gas located in the first chamber 1101; the electron emitter 1104 is connected to the inside of the first chamber 1101 through the connecting pipe, and the electron emitter 1104 can emit high-speed electrons into the first chamber 1101 through the connecting pipe. The high-speed electrons emitted by the electron emitter 1104 collide with the first vapor deposition gas in the first chamber 1101 through the first tube 1102 to decompose the first vapor deposition gas in the molecular state.

[0045] Specifically, when it is necessary to introduce the first vapor deposition gas onto the surface of the substrate 2 of the vapor deposition apparatus 1, the first vapor deposition gas is introduced into the first tube 1102. Then, the first vapor deposition gas flows from the first tube 1102 to the first inlet end, and then flows into the first chamber 1101. At the same time, the electron emitter 1104 is turned on, and the electron emitter 1104 emits high-speed electrons. The high-speed electrons collide with the first vapor deposition gas located in the first chamber 1101. The high-speed electrons collide with the first vapor deposition gas in a molecular state into an atomic or ionic state. Then, the first vapor deposition gas in an atomic or ionic state flows from the first outlet end to the second tube 1103. Then, the decomposed first vapor deposition gas flows along the second tube 1103 through the diverter plate 13 to the location of the substrate 2, so as to react with other vapor deposition gases to form an insulating film on the surface of the substrate 2.

[0046] The decomposition device described above, by providing an electron emitter 1104 that is connected to the first chamber 1101, and the electron emitter 1104 can emit high-speed electrons into the first chamber 1101. The high-speed electrons will collide with the first vapor deposition gas introduced into the first chamber 1101 through the first tube 1102. The collision between the high-speed electrons and the first vapor deposition gas will decompose the first vapor deposition gas in a molecular state into an atomic state. In this way, the first vapor deposition gas in an atomic state and the second vapor deposition gas in an atomic state react on the surface of the substrate 2 to form an insulating film. This configuration can improve the forming effect of the insulating film on the surface of the substrate 2 and improve the utilization rate of the vapor deposition gas.

[0047] In some embodiments, please refer to Figure 2 and Figure 3 The gas decomposition device 11 also includes a reflector 1105 disposed within the first chamber 1101, capable of reflecting electrons. Specifically, when high-speed electrons collide with the reflector 1105, the reflector 1105 reflects the high-speed electrons, allowing the high-speed electrons to collide with the first vapor deposition gas again, thereby more fully decomposing the first vapor deposition gas, which is in a molecular state, into an atomic or ionic state. This improves the forming effect of the insulating film on the surface of the substrate 2 and increases the utilization rate of the vapor deposition gas. Furthermore, the reflector 1105 and the electron emitter 1104 are respectively disposed on opposite sides of the first chamber 1101. This arrangement can improve the efficiency of the reflector 1105 in reflecting high-speed electrons, enabling the high-speed electrons to more fully decompose the first vapor deposition gas, so that more of the first vapor deposition gas participates in the reaction on the surface of the substrate 2 in an atomic or ionic state.

[0048] For example, the reflector 1105 can be made of tungsten, molybdenum, copper, graphite, gold-plated or silver-plated materials, etc.

[0049] In addition, the reflector 1105 can also be disposed at other locations in the first chamber 1101. For example, the reflector 1105 and the electron emitter 1104 can be disposed on adjacent sides of the first chamber 1101. Since high-speed electrons move randomly in the first chamber 1101, by disposing the reflector 1105 and the electron emitter 1104 in the manner described above, the reflector 1105 can also reflect electrons, and the high-speed electrons can collide with the first vapor deposition gas again, which can also further decompose the first vapor deposition gas.

[0050] In this embodiment, all walls of the first chamber 1101 are provided with reflectors 1105. This arrangement can further enhance the reflection effect on high-speed electrons, thereby further enhancing the decomposition effect on the first vapor deposition gas.

[0051] In some embodiments, please refer to Figure 3 The electron emitter 1104 and the first inlet end are located on adjacent sidewalls of the first chamber 1101, and the direction of movement of the electrons emitted by the electron emitter 1104 is perpendicular to the inflow direction of the first vapor deposition gas. For example, the high-speed electrons emitted by the electron emitter 1104 move along... Figure 3 The first vapor deposition gas is injected into the first chamber 1101 in the direction indicated by the middle arrow B, and the first vapor deposition gas travels along... Figure 3 The high-speed electrons are injected into the first chamber 1101 in the direction indicated by the middle arrow A. The direction of the high-speed electrons is perpendicular to the direction of the first vapor deposition gas. This allows the high-speed electrons to collide more fully with the first vapor deposition gas, so as to more efficiently decompose the first vapor deposition gas in a molecular state into an atomic or ionic state, thereby improving the decomposition efficiency of the first vapor deposition gas.

[0052] In some embodiments, please refer to Figure 2 The electron emitter 1104 and the first inlet end are located on opposite sidewalls of the first chamber 1101, and the direction of electron movement emitted by the electron emitter 1104 is opposite to the direction of inflow of the first vapor deposition gas. For example, the high-speed electrons emitted by the electron emitter 1104 move along... Figure 2 The first vapor deposition gas is injected into the first chamber 1101 in the direction indicated by the middle arrow C, and the first vapor deposition gas travels along... Figure 2 The high-speed electrons are injected into the first chamber 1101 in the direction indicated by the middle arrow D. The direction of the high-speed electrons is opposite to that of the first vapor deposition gas. This allows the high-speed electrons to collide more fully with the first vapor deposition gas, thereby more efficiently decomposing the first vapor deposition gas in a molecular state into an atomic or ionic state, thus improving the decomposition efficiency of the first vapor deposition gas.

[0053] In addition, the direction of electron movement emitted by electron emitter 1104 can be at other angles to the direction of inflow of the first vapor deposition gas into the first chamber 1101. For example, the direction of electron movement emitted by electron emitter 1104 can be at an acute angle to the direction of inflow of the first vapor deposition gas, or the direction of electron movement emitted by electron emitter 1104 can be at an obtuse angle to the direction of inflow of the first vapor deposition gas. In this way, high-speed electrons can also decompose the first vapor deposition gas into a molecular state.

[0054] In some embodiments, an anode mesh (not shown) electrically connected to a power source is provided at the first outlet end of the first chamber 1101. Specifically, after the first vapor deposition gas is decomposed by high-speed electrons impacting it in the first chamber 1101, the decomposed first vapor deposition gas and electrons flow out together from the first outlet end. Since the anode mesh electrically connected to the power source is provided at the first outlet end, the anode mesh, which is in a powered state, absorbs the electrons mixed in the first vapor deposition gas as the mixture of the first vapor deposition gas and electrons flows through it. This prevents the electrons from participating in the reaction of the first vapor deposition gas on the surface of the substrate 2, thereby improving the forming effect of the insulating film.

[0055] In addition, the anode mesh can also be placed inside the second tube 1103, which can also absorb electrons from the first vapor deposition gas.

[0056] In some embodiments, please refer to Figure 2 and Figure 3At least one first heating element 1106 is provided in the first chamber 1101. Specifically, when the high-speed electron emitted by the electron emitter 1104 impacts the first vapor deposition gas in a molecular state, it cannot be guaranteed that all the first vapor deposition gas in a molecular state will be decomposed, or in other words, when the decomposition energy required for the first vapor deposition gas in a molecular state is large, some of the first vapor deposition gas will still remain in a molecular state after being impacted by high-speed electrons. At this time, by providing the first heating element 1106 in the first chamber 1101, the first heating element 1106 in a heated state will decompose some of the first vapor deposition gas in a molecular state into an atomic state or an ionic state, thereby ensuring that the first vapor deposition gas in a molecular state is fully decomposed, and further improving the forming quality of the insulating film.

[0057] Here, the location of the first heating element 1106 is not limited. The first heating element 1106 can be disposed on the wall of the first chamber 1101 or inside the first chamber 1101, as long as it can contact the first vapor deposition gas and heat the first vapor deposition gas. Of course, in order to ensure the heating effect of the first heating element 1106 on the first vapor deposition gas, multiple first heating elements 1106 can be provided; in order to further improve the heating effect of the first heating element 1106 on the first vapor deposition gas, multiple heating elements can be arranged at intervals.

[0058] In addition, the first heating element 1106 can also be set in other locations, such as in the first or second pipeline, or between the flow divider 13 and the substrate 2.

[0059] This application also provides a gas decomposition method applicable to the gas decomposition apparatus 11 of any of the above claims. Since the gas decomposition method is applicable to the gas decomposition apparatus 11, the beneficial effects of the gas decomposition method brought by the gas decomposition apparatus 11 are described above and will not be repeated here. The gas decomposition method includes at least the following steps: turning on the electron emitter 1104, the first vapor deposition gas flows into the first chamber 1101 through the first inlet end, and the high-speed electrons emitted by the electron emitter 1104 collide with the first vapor deposition gas to decompose it; when the high-speed electrons collide with the reflector 1105, they will bounce back, so that the high-speed electrons collide with the first vapor deposition gas again to decompose it again; turning on the first heating element 1106, when the first vapor deposition gas in the first chamber 1101 flows to the first heating element 1106, the first heating element 1106 generates heat to decompose the first vapor deposition gas; turning on the power supply to energize the anode mesh, when the decomposed first vapor deposition gas flows out from the outlet end of the first chamber 1101, it will flow through the anode mesh, the anode mesh absorbs electrons mixed in the first vapor deposition gas, and the decomposed first vapor deposition gas flows out from the first outlet end, completing the decomposition process of the first vapor deposition gas.

[0060] In the above-mentioned gas decomposition method, the high-speed electrons emitted by the electron emitter 1104, in conjunction with the reflector 1105, enable the high-speed electrons to repeatedly collide with the first vapor deposition gas, thereby fully decomposing the first vapor deposition gas in a molecular state. Furthermore, the first heating element 1106 can further heat the first vapor deposition gas located in the first chamber 1101, thereby further decomposing the first vapor deposition gas in a molecular state, so that the first vapor deposition gas reacts with other vapor deposition gases on the surface of the substrate 2 in an atomic or ionic state to form a high-quality insulating film.

[0061] This application also provides a vapor deposition apparatus 1, which includes a vapor deposition chamber 12 and at least two gas decomposition devices 11 located in the vapor deposition chamber 12. At least one of the at least two gas decomposition devices is the gas decomposition device 11 mentioned above. Since the vapor deposition apparatus 1 includes the gas decomposition device 11 mentioned above, the beneficial effects of the gas decomposition device 11 on the vapor deposition apparatus 1 are as described above and will not be repeated here. The other of the at least two gas decomposition devices 11 includes a second chamber 1107, a third tube 1108, a fourth tube 1109, and a second heating element 1110. The second chamber 1107 has a second inlet end and a second outlet end. The second vapor deposition gas flows into the second chamber 1107 through the second inlet end and flows out of the second chamber 1107 through the second outlet end. The third tube 1108 is connected to the second inlet end of the second chamber 1107 to introduce the second vapor deposition gas into the second chamber 1107. The fourth tube 1109 is connected to the second outlet end of the second chamber 1107 to export the second vapor deposition gas located in the second chamber 1107. The second heating element 1110 is disposed in the second chamber 1107. The second heating element 1110 in the heated state can heat and decompose the second vapor deposition gas in a molecular state. Specifically, when it is necessary to introduce the second vapor deposition gas onto the surface of the substrate 2 of the vapor deposition apparatus 1, the second vapor deposition gas is introduced into the third tube 1108. Then, the second vapor deposition gas flows to the second inlet end of the second tube 1103, and then flows into the second chamber 1107. At the same time, the second heating element 1110 is turned on. The second heating element 1110 heats the second vapor deposition gas to decompose the second vapor deposition gas in a molecular state into an atomic or ionic state. Then, the second vapor deposition gas in an atomic or ionic state flows from the second outlet end to the fourth tube 1109. Then, the decomposed second vapor deposition gas flows along the fourth tube 1109 through the diverter plate 13 to the location of the substrate 2 to react with the first vapor deposition gas to form an insulating film on the surface of the substrate 2.

[0062] It should be noted that, taking the vapor deposition apparatus 1, which includes two gas decomposition devices 11, as an example, one gas decomposition device 11 consists of a first chamber 1101, a first tube 1102, a second tube 1103, and an electron emitter 1104, while the other gas decomposition device 11 consists of a second chamber 1107, a third tube 1108, a fourth tube 1109, and a second heating element 1110. That is, the first vapor deposition gas is decomposed by high-speed electrons emitted by the electron emitter 1104, and the second vapor deposition gas is decomposed by heat emitted by the second heating element 1110. It should be noted that this configuration is suitable for situations where the energy required for the decomposition of the first vapor deposition gas is higher than the energy required for the decomposition of the second vapor deposition gas. Of course, the two gas decomposition devices 11 in the vapor deposition apparatus can each be composed of a first chamber 1101, a first tube 1102, a second tube 1103 and an electron emitter 1104. Correspondingly, the two gas decomposition devices 11 in the vapor deposition apparatus can each be composed of a second chamber 1107, a third tube 1108, a fourth tube 1109 and a second heating element 1110.

[0063] In some embodiments, the vapor deposition apparatus 1 further includes a flow divider 13 located within the vapor deposition chamber 12. The flow divider 13 is used to divide the first vapor deposition gas and the second vapor deposition gas, so that the first vapor deposition gas can flow uniformly to the substrate 2, and the second vapor deposition gas can also flow uniformly to the substrate 2, thereby improving the forming quality of the insulating film formed on the surface of the substrate 2 by the first and second vapor deposition gases. The second tube 1103 is connected to the first tube group 131 of the flow divider 13, and the fourth tube 1109 is connected to the second tube group 132 of the flow divider 13. In the flow direction of the first vapor deposition gas, the part where the second tube 1103 connects to the first chamber 1101 is a first part with a gradually narrowing pipe diameter. This arrangement facilitates the guidance of the first vapor deposition gas in the first chamber 1101 into the second tube 1103, avoiding the retention of the first vapor deposition gas in the first chamber 1101, and improving the flow efficiency of the first vapor deposition gas, so that the first vapor deposition gas flows to the surface of the substrate 2 more quickly, thereby improving the forming efficiency of the insulating film.

[0064] In some embodiments, in the flow direction of the second vapor deposition gas, the portion where the fourth tube 1109 connects to the second chamber 1107 is a second portion with a gradually narrowing diameter. This arrangement facilitates the guidance of the vapor deposition gas in the second chamber 1107 into the fourth tube 1109, preventing the second vapor deposition gas from remaining in the second chamber 1107, and improving the flow efficiency of the second vapor deposition gas, allowing it to flow more quickly to the surface of the substrate 2, thereby improving the forming efficiency of the insulating film.

[0065] In some embodiments, in the flow direction of the first vapor deposition gas, the portion where the second tube 1103 connects to the diverter plate 13 is a third portion with a gradually expanding pipe diameter. Specifically, since the function of the diverter plate 13 is to divert the first vapor deposition gas so that it flows evenly to the surface of the substrate 2, by setting the aforementioned third portion, the first vapor deposition gas can flow more evenly to the diverter plate 13. Thus, under the diversion effect of the diverter plate 13, the first vapor deposition gas can flow more evenly to the substrate 2, so that the insulating film formed on the surface of the substrate 2 by the first vapor deposition gas and the second vapor deposition gas is more uniform, and the forming quality of the insulating film is better.

[0066] Furthermore, the second tube 1103 is connected to the middle of the diversion plate 13. This arrangement allows the first vapor deposition gas to be more fully and evenly distributed within the diversion plate 13, thus enabling the first vapor deposition gas to flow more evenly to the surface of the substrate 2, thereby improving the forming quality of the insulating film.

[0067] In some embodiments, in the flow direction of the second vapor deposition gas, the portion where the fourth tube 1109 connects to the diverter plate 13 is a fourth portion with a gradually expanding pipe diameter. Specifically, since the function of the diverter plate 13 is to divert the second vapor deposition gas so that it flows evenly to the surface of the substrate 2, by setting the above-mentioned fourth portion, the second vapor deposition gas can flow more evenly to the diverter plate 13. Thus, under the diversion effect of the diverter plate 13, the second vapor deposition gas can flow more evenly to the substrate 2, so that the insulating film formed on the surface of the substrate 2 by the second vapor deposition gas and the first vapor deposition gas is more uniform and the forming quality of the insulating film is better.

[0068] Furthermore, the fourth tube 1109 is connected to the middle of the diversion plate 13. This arrangement allows the second vapor deposition gas to be more fully and evenly distributed within the diversion plate 13, thus enabling the second vapor deposition gas to flow more evenly to the surface of the substrate 2, thereby improving the forming quality of the insulating film.

[0069] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0070] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

[0071] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.

[0072] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0073] It should be understood that the qualifiers “first,” “second,” “third,” “fourth,” “fifth,” and “sixth” used in the description of the embodiments of this application are only used to more clearly illustrate the technical solutions and are not intended to limit the scope of protection of this application.

[0074] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.

Claims

1. A gas decomposition device, characterized in that, Set in the vapor deposition apparatus, including: The first chamber has a first inlet end and a first outlet end. The first vapor deposition gas flows into the first chamber through the first inlet end and flows out of the first chamber through the first outlet end. A first tube is connected to the first inlet end of the first chamber to introduce the first vapor deposition gas into the first chamber. The second tube is connected to the first outlet end of the first chamber to exhaust the first vapor deposition gas located in the first chamber. An electron emitter is connected to the interior of the first chamber via a connecting tube, and the electron emitter can emit high-speed electrons into the first chamber through the connecting tube. The high-speed electrons emitted by the electron emitter collide with the first vapor deposition gas introduced into the first chamber through the first tube, thereby decomposing the first vapor deposition gas in a molecular state.

2. The gas decomposition apparatus according to claim 1, characterized in that, It also includes a reflector plate disposed in the first chamber that can reflect electrons, and the reflector plate and the electron emitter are respectively disposed on opposite sides of the first chamber.

3. The gas decomposition apparatus according to claim 1 or 2, characterized in that, The electron emitter and the first inlet end are respectively located on the adjacent sidewalls of the first chamber, and the direction of movement of the electron emitted by the electron emitter is perpendicular to the direction of inflow of the first vapor deposition gas.

4. The gas decomposition apparatus according to claim 1 or 2, characterized in that, The electron emitter and the first inlet end are located on opposite side walls of the first chamber, and the direction of movement of the electron emitted by the electron emitter is opposite to the direction of inflow of the first vapor deposition gas.

5. The gas decomposition apparatus according to claim 1, characterized in that, An anode mesh electrically connected to a power source is provided at the first outlet end of the first chamber.

6. The gas decomposition apparatus according to claim 1, characterized in that, At least one first heating element is provided in the first chamber.

7. A gas decomposition method, characterized in that, The gas decomposition apparatus applicable to any one of claims 1-6 comprises at least the following steps: When the electron emitter is turned on, the first vapor deposition gas flows into the first chamber through the first inlet end, and the high-speed electrons emitted by the electron emitter collide with the first vapor deposition gas to decompose the first vapor deposition gas. When the high-speed electrons collide with the reflector, they will bounce off and collide with the first vapor deposition gas again, thereby decomposing the first vapor deposition gas again. When the first heating element is turned on, the first vapor deposition gas located in the first chamber flows to the first heating element, and the first heating element generates heat to decompose the first vapor deposition gas. When the power is turned on, the anode mesh is energized. When the first vapor-deposited gas after decomposition flows out from the outlet end of the first chamber, it will flow through the anode mesh. The anode mesh absorbs electrons mixed in the first vapor-deposited gas. The first vapor-deposited gas after decomposition flows out from the first outlet end, completing the decomposition process of the first vapor-deposited gas.

8. A vapor deposition apparatus, characterized in that, The device includes a vapor deposition chamber and at least two gas decomposition devices located within the vapor deposition chamber, wherein at least one of the at least two gas decomposition devices is the gas decomposition device according to any one of claims 1-6, and the other of the at least two gas decomposition devices includes: The second chamber has a second inlet end and a second outlet end. The second vapor deposition gas flows into the second chamber through the second inlet end and flows out of the second chamber through the second outlet end. The third tube is connected to the second inlet end of the second chamber to introduce the second vapor deposition gas into the second chamber; The fourth tube is connected to the second outlet end of the second chamber to exhaust the second vapor deposition gas located in the second chamber; The second heating element is disposed in the second chamber. When in a heated state, the second heating element can heat and decompose the second vapor deposition gas in a molecular state.

9. The vapor deposition apparatus according to claim 8, characterized in that, It also includes a flow divider plate located within the vapor deposition chamber, the second tube being connected to the first tube group of the flow divider plate, and the fourth tube being connected to the second tube group of the flow divider plate, wherein: In the flow direction of the first vapor deposition gas, the part where the second tube body connects to the first chamber is a first part with a gradually narrowing tube diameter; And / or, In the flow direction of the second vapor deposition gas, the part where the fourth tube connects to the second chamber is a second part with a gradually narrowing tube diameter.

10. The vapor deposition apparatus according to claim 9, characterized in that, In the flow direction of the first vapor deposition gas, the part where the second tube body is connected to the flow divider plate is a third part with a gradually expanding tube diameter; And / or, In the flow direction of the second vapor deposition gas, the part where the fourth tube body is connected to the flow divider plate is a fourth part with a gradually expanding pipe diameter.

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