Helical magnetic single crystal fe3ga4 and preparation method and application thereof

Abstract

The application discloses a helical magnetic single crystal Fe3Ga4 and a preparation method and application thereof. The preparation method comprises the following steps: Fe and Ga are loaded into a crucible according to a molar ratio of Fe:Ga=(40-45):(55-60), vacuumizing and then heating and melting, rapidly cooling to 890-910 DEG C, then reducing to 820-840 DEG C at a speed of 0.5-2 DEG C / h and keeping the temperature, centrifugal cooling, and obtaining black metal luster parallelepiped single crystals with a size of 1-1.5 mm, the corresponding crystal face index of the outer surface is (001), (11-1) and (-111), belonging to a C2 / m space group, and maintaining a helical magnetic sequence at 70K-360K. The electric transport measurement of the current along the [1-10] crystal direction and the magnetic field perpendicular to the ab plane shows that the abnormal Hall conductance reverses at about 150K. The application also provides an application of the single crystal in preparing a generated inductor. A circuit device with the current along the c axis direction is prepared by adopting focused ion beam etching, and a generated inductive signal induced by a short-period helical and conical magnetic sequence is detected for the first time at about room temperature, thereby providing a new material basis for the miniaturization of the inductor.

Description

Technical Field

[0001] This invention belongs to the field of crystal growth technology. Specifically, this invention relates to a method for preparing helical magnetic single crystal Fe3Ga4 and the single crystal product obtained by this method. Furthermore, this invention also relates to the application of this helical magnetic single crystal Fe3Ga4 in the fabrication of generated inductors. Background Technology

[0002] Helical magnetic structures are a common type of non-collinear magnetic order in magnetic materials, in which atomic magnetic moments are arranged in a helical pattern in space due to various magnetic competition and exchange interactions. Single-crystal materials with short-period helical magnetic structures have broad application prospects in the field of spintronics.

[0003] Emergent inductors are a novel type of inductor based on quantum mechanics principles. They utilize the non-collinear spin structure in materials; when alternating current flows through them, the interaction between conduction electrons and local magnetic moments generates an evolved electromagnetic field, thus exhibiting inductive properties. This effect overturns the traditional paradigm that "inductance decreases with decreasing device size," providing a physical basis for the miniaturization of inductor devices and novel spintronics. Currently, various materials with nanoscale short-period helical magnetic structures have been discovered in transition metals and rare earth metals, such as MnSi and TbMnO3. However, most of these materials have low magnetic order transition temperatures, making them unsuitable for device applications at room temperature or higher. Yokouchi et al. (Nature, August 4) first discovered this in the helical magnet Gd3Ru4Al 12 Emergent electromagnetic induction in a helical-spin magnet was detected in the fabricated microcircuit device (Tomoyuki Yokochi et al., Nature, August 4), but the material's operating temperature is far below room temperature, limiting its practical application.

[0004] Single-crystal Fe3Ga4 has been reported as a single-crystal material with a helical magnetic structure. In the prior art, Philippe et al. (Acta Cryst., 1975) reported the growth of Fe3Ga4 single crystals using the iodine vapor chemical vapor transport method (StructuresCristallines des Phases Fe3Ga4 et Cr3Ga4, PAR MJPHILIPPE et al., Acta Cryst. (1975)), and Yan Wu et al. (Scientific Reports, 2018) reported the growth of Fe3Ga4 single crystals using the floating zone method (Spin density wave instability in a ferromagnet, Yan Wu et al., SCIENTIFIC REPORTS (2018)). However, the above preparation methods suffer from problems such as complex processes, long growth cycles, the need for iodine transport agents, and the resulting crystal morphology is mostly needle-like, which is not conducive to subsequent device fabrication. In addition, although the Ga auto-melting method has the advantages of simple raw materials and simple process, the Fe-Ga binary phase diagram is complex. If the raw material ratio or temperature conditions are not selected properly, it is easy to generate impurity phases such as Fe3Ga and FeGa3, making it difficult to obtain pure phase single crystals.

[0005] Therefore, developing a simple, low-cost method for preparing Fe3Ga4 single crystals with regular morphology and clear crystal orientation, and exploring its application in generating inductors near room temperature, is of great scientific significance and practical value. Summary of the Invention

[0006] One objective of this invention is to provide a simple, low-cost method for preparing helical magnetic single crystal Fe3Ga4 with regular morphology and clear crystallographic orientation, thereby overcoming the shortcomings of existing technologies such as long preparation cycle, requirement for iodine transport agent, and poor crystal morphology.

[0007] Another object of the present invention is to provide a helical magnetic single crystal Fe3Ga4 prepared by the above method, which has a stable crystallographic outer surface and exhibits helical magnetic order and corresponding electrical transport characteristics over a wide temperature range.

[0008] Another object of the present invention is to provide the use of the spiral magnetic single crystal Fe3Ga4 in the fabrication of a generated inductor, and a circuit device based on the single crystal to realize the detection and control of the generated inductance signal near room temperature.

[0009] The above-mentioned objective of this invention is achieved by providing the following technical solution.

[0010] In a first aspect, the present invention provides a method for preparing helical magnetic single crystal Fe3Ga4, which includes the following steps:

[0011] (1) Fe and Ga are loaded into a crucible in a molar ratio of Fe:Ga=(40-45):(55-60), and then the crucible is placed in a quartz tube, vacuumed and sealed.

[0012] (2) Heat the quartz tube to melt Fe and Ga; then rapidly cool it to 890-910℃; then cool it from 890-910℃ to 820-840℃ at a rate of 0.5-2℃ / h and hold it at that temperature;

[0013] (3) Then, centrifuge at 820-840℃ and then cool to room temperature.

[0014] The inventors unexpectedly discovered that by precisely controlling the molar ratio of Fe to Ga (40-45:55-60) and cooling the temperature from 890-910℃ to 820-840℃ at a rate of 0.5-2℃ / h, large-size helical magnetic single crystals of Fe3Ga4 with regular parallelepiped morphology and stable crystallographic orientations ((001), (11-1), (-111)) on the six outer surfaces can be stably grown. Furthermore, this single crystal maintains helical magnetic order over a wide temperature range of 70K to 360K, and the resulting micro-circuit devices can generate tunable evolved inductance signals near room temperature. These technical effects are not simply a result of the superposition of parameters, but are achieved through the synergistic effect of a specific molar ratio and a specific cooling range, overcoming the technical difficulties of existing technologies such as the easy formation of impurity phases due to the complexity of the Fe-Ga phase diagram, irregular crystal morphology, and long preparation cycles.

[0015] The inventors also unexpectedly discovered that during the self-melting growth of Ga in Fe3Ga4 single crystals, there is a significant synergistic effect among the raw material molar ratio, the cooling rate in the key cooling range, and the target cooling temperature. These factors are the decisive factors in determining whether a regular morphology, high-quality single crystal can be obtained and the room-temperature inductance effect can be achieved. Specifically: if the molar ratio deviates from the range of (40-45): (55-60), impurity phases such as Fe3Ga and FeGa3 are easily generated, and pure Fe3Ga4 cannot be obtained; if the cooling rate from 890-910℃ to 820-840℃ is too fast (>2℃ / h), or the target cooling temperature is higher than 840℃ or lower than 820℃, the impurity phase in the product increases significantly, the single crystal yield decreases sharply, and a clear inductance signal cannot be detected. Only when the molar ratio, cooling rate, and target cooling temperature are simultaneously controlled within the aforementioned ranges can high-quality Fe3Ga4 single crystals with regular parallelepiped morphology, clear crystallographic orientation, wide-temperature-range helical magnetic order, and the ability to generate tunable evolved inductance signals near room temperature be stably obtained. The synergistic selection of these parameters cannot be anticipated through conventional optimization.

[0016] Preferably, in the preparation method of the present invention, the purity of both Fe and Ga is greater than 99.9%.

[0017] Preferably, in the preparation method of the present invention, the vacuuming includes controlling the vacuum degree of the quartz tube to 5 × 10⁻⁶. -4 Below Pa.

[0018] Preferably, in the preparation method of the present invention, the step (2) of melting Fe and Ga includes: heating the quartz tube from room temperature to 1000-1200°C for 5-10 hours and holding it at that temperature for 10-30 hours.

[0019] Preferably, in the preparation method of the present invention, the rapid cooling in step (2) includes: cooling the quartz tube to 890-910°C in 1-8 hours.

[0020] Preferably, in the preparation method of the present invention, the heat preservation in step (2) is carried out for 1-3 days.

[0021] Secondly, the present invention provides a spiral magnetic single crystal Fe3Ga4, wherein the single crystal is prepared by the preparation method of the present invention, and the single crystal is a black parallelepiped with a metallic luster, wherein its six outer surfaces have stable crystallographic orientations, and the Miller indices of the three non-equivalent outer surfaces are (001), (11-1), and (-111).

[0022] Preferably, in the spiral magnetic single crystal Fe3Ga4 of the present invention, the single crystal is a monoclinic crystal system with space group C2 / m and group number 12.

[0023] Preferably, in the spiral magnetic single crystal Fe3Ga4 of the present invention, the (001) crystal plane of the single crystal is characterized by Cu target Kα diffraction, and the X-ray diffraction pattern expressed in 2θ angle has diffraction peaks at 23.68°, 35.75°, 48.25°, 61.38°, 75.49°, and 91.09°, with a 2θ angle measurement error of ±0.01°.

[0024] Preferably, in the spiral magnetic single crystal Fe3Ga4 of the present invention, when the current is along the [1-10] crystal direction and the magnetic field is perpendicular to the ab crystal plane of the single crystal, its anomalous Hall conductance undergoes sign reversal near 150K.

[0025] Preferably, in the helical magnetic single crystal Fe3Ga4 of the present invention, the single crystal maintains helical magnetic order in a temperature range of 70K to 360K.

[0026] Thirdly, this invention provides the application of the spiral magnetic single crystal Fe3Ga4 of this invention in the fabrication of a generated inductor. The generated inductor utilizes the spiral magnetic structure in the single crystal to generate an generated electromagnetic field under alternating current driving, thereby exhibiting inductive characteristics. The inductance of the generated inductor increases as the cross-sectional area of ​​the device decreases, and no coil or magnetic core is required. The operating temperature range of the generated inductor is 70K to 360K, and its inductance value is controlled by temperature, external magnetic field, or alternating current amplitude, and it jumps near the magnetic state transition point of the single crystal.

[0027] The present invention also provides a circuit device fabricated using the spiral magnetic single crystal Fe3Ga4 of the present invention, wherein the device is fabricated by focused ion beam etching technology, and preferably, the current direction is along the c-axis direction of the single crystal.

[0028] Preferably, in the circuit device of the present invention, a lock-in amplifier is used to detect the evolved inductance signal in the device, and the evolved inductance signal jumps near the magnetic state transition point of the single crystal.

[0029] Preferably, in the circuit device of the present invention, the generated inductance signal increases with the increase of the applied AC current amplitude and varies with the AC frequency.

[0030] Compared with the prior art, the present invention has the following beneficial effects:

[0031] (1) Simple preparation method and low cost: The present invention uses Ga self-melting method to grow Fe3Ga4 single crystals without the need for chemical transport agents such as iodine vapor. The raw materials are only high-purity Fe ingots and Ga wafers. The process steps are simple and the growth cycle is short (only a few days from loading to obtaining single crystals), which significantly reduces the preparation cost and time cost.

[0032] (2) Regular crystal morphology, clear orientation, and considerable size: By precisely controlling the raw material molar ratio (40-45:55-60) and the key cooling procedure (from 890-910℃ to 820-840℃ at 0.5-2℃ / h), this invention can stably obtain Fe3Ga4 single crystals with regular parallelepiped morphology and black metallic luster, with a single crystal size of 1-1.5 mm. The six outer surfaces of this single crystal have stable crystallographic orientations, and the Miller indices of the three non-equivalent outer surfaces are (001), (11-1), and (-111), respectively, which facilitates the directional processing and large-scale fabrication of subsequent devices.

[0033] (3) Wide-temperature range helical magnetic order and excellent electrical transport characteristics: The Fe3Ga4 single crystal prepared in this invention maintains helical magnetic order in a wide temperature range from 70K to 360K, covering the range from room temperature to high temperature, which breaks through the limitations of existing inductive materials (such as Gd3Ru4Al). 12 The limitation of operating only at low temperatures. Electric transport measurements along the [1-10] crystal orientation show that when the magnetic field is perpendicular to the ab crystal plane, the anomalous Hall conductance undergoes sign reversal near 150K, exhibiting rich spintronic properties.

[0034] (4) First-ever detection and control of evolved inductance signal near room temperature: This invention is the first to utilize focused ion beam etching technology to fabricate Fe3Ga4 single crystals into micro-circuit devices (preferably, the current is along the c-axis), and uses a lock-in amplifier to detect the evolved inductance signal caused by the transition of the intrinsic helical magnetic structure to other magnetic states. This signal exhibits a significant jump near the magnetic state transition point, and the inductance value can be controlled in multiple dimensions by temperature, external magnetic field, AC current amplitude, and frequency. Furthermore, the inductance of this evolved inductor increases as the cross-sectional area of ​​the device decreases without the need for winding coils, overturning the traditional size scaling rules of inductors and providing a novel material platform and physical basis for the miniaturization and on-chip integration of inductor devices. Attached Figure Description

[0035] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings, wherein:

[0036] Figure 1 The photograph (a), X-ray diffraction pattern (b), and electron diffraction image (c) of the Fe3Ga4 single crystal prepared in Example 1 of the present invention are shown.

[0037] Figure 2 The electrical transport measurement curves of the Fe3Ga4 single crystal prepared in Example 1 of this invention are shown.

[0038] Figure 3The magnetization curves, thermomagnetic curves, and magnetic phase diagrams of the Fe3Ga4 single crystal prepared in Example 1 of the present invention along different crystal axes at different temperatures are shown.

[0039] Figure 4 This invention uses focused ion beam etching to obtain the transport device obtained from the Fe3Ga4 single crystal prepared in Example 1 of this invention;

[0040] Figure 5 The graph shows the variation of the evolved inductance signal extracted from the transport device obtained using the Fe3Ga4 single crystal prepared according to Example 1 of the present invention with the magnetic field.

[0041] Figure 6 The diagram shows the variation of the evolved inductance signal extracted from the transport device obtained by Fe3Ga4 single crystal prepared in Example 1 of the present invention with frequency and current amplitude, and a schematic diagram comparing the inductance of the device per unit size with other evolved inductance materials.

[0042] Figure 7 The inductance signal is extracted from the transport device of the Fe3Ga4 single crystal b-axis prepared in Example 1, where the current and magnetic field are along the same direction.

[0043] Figure 8 This is a schematic diagram of powder XRD diffraction of the products grown according to Comparative Example 1 and Comparative Example 2. Detailed Implementation

[0044] The present invention will be further described in detail below with reference to specific embodiments. The embodiments given are only for illustrating the present invention and are not intended to limit the scope of the present invention.

[0045] It should be noted that the purity of the elemental Fe ingots and Ga wafers used in the embodiments of this invention is greater than 99.9%. The pit furnace was manufactured by Tianjin Kaiheng Electric Heating Technology Co., Ltd., model KLJ-13Y. The transmission electron microscope was manufactured by JEOL JEM-ARM200F. The X-ray diffractometer was manufactured by Malvern Panalytical. The focused ion beam etching system was manufactured by Thermo Fisher Scientific. The magnetic measurement system (MPMS (SQUID-VSM)) and the comprehensive physical property measurement system (PPMS-16T and PPMS-9T) were manufactured by Quantum Design (USA).

[0046] Example 1

[0047] This embodiment provides a method for preparing helical magnetic single crystal Fe3Ga4, specifically including the following steps:

[0048] Approximately 20g of Fe ingots and Ga sheets with a purity >99.9% were loaded into an alumina crucible at a molar ratio of Fe:Ga = 43:57. The crucible was then placed inside a quartz tube, and a vacuum of 5 × 10⁻⁶ was applied. -4 After the temperature drops below Pa, the tube is sealed. The quartz tube is placed in a pit furnace and heated from room temperature to 1150°C over 10 hours, and held at that temperature for 24 hours to allow the Fe ingot and Ga sheet to fully melt. Then, it is rapidly cooled to 900°C over 5 hours. Next, it is cooled from 900°C to 830°C at a rate of 1°C / h and held at that temperature for 2 days. Finally, the quartz tube is placed in a centrifuge, centrifuged at high temperature, and then cooled to room temperature.

[0049] A black, metallic-luster parallelepiped single crystal, approximately 1 mm in size, could be peeled off from the top surface of the alloy block. Scanning electron microscopy (SEM) and EDS analysis confirmed its composition to be Fe3Ga4.

[0050] Crystal structure and morphology characterization

[0051] The (001) crystal plane of the obtained single crystal was characterized using Malvern Panalytical X-ray diffraction (CRT) with Cu target Kα radiation and a 2θ scan range of 10°–100°. The results are as follows: Figure 1 As shown in (b), distinct diffraction peaks appear at 23.68°, 35.75°, 48.25°, 61.38°, 75.49°, and 91.09°, with a 2θ angle measurement error of ±0.01°, consistent with the diffraction characteristics of the (001) plane of the monoclinic C2 / m space group (group number 12). Single-crystal orientation results indicate that the cell parameters are: a=10.058 Å, b=7.657 Å, c=7.848 Å, α=90°, β=106°, γ=90°.

[0052] like Figure 1 As shown in (a), the single crystal exhibits a regular parallelepiped morphology with six outer surfaces having stable crystallographic orientations. The Miller indices of the three non-equivalent outer surfaces are (001), (11-1), and (-111), respectively. Figure 1 (c) shows electron diffraction images of the sample prepared by focused ion beam etching along the

[100] and

[201] directions. The electron diffraction images (transmission electron microscope, JEOL JEM-ARM200F) show clear diffraction spots, indicating good crystal quality.

[0053] Magnetic measurement

[0054] The magnetic properties of the single crystal were characterized using a magnetic measurement system. Thermomagnetic curves ( Figure 3This indicates that the single crystal maintains a stable helical magnetic order within the temperature range of 70K to 360K. The magnetization curves along the a-axis and b-axis exhibit typical helical magnetic characteristics: a linear response at low fields, with the magnetic state successively transforming into a transverse conical phase and a ferromagnetic phase as the magnetic field increases. At zero field, the magnetic states corresponding to different temperature ranges are: ferromagnetic state from 0 to 70K, helical magnetic state from 70K to 360K, ferromagnetic state from 360K to 420K, and paramagnetic state above 420K (see detailed magnetic phase diagram). Figure 3 ).

[0055] Electricity transmission measurement

[0056] Electrical transport measurements were performed along the [1-10] crystal orientation using a comprehensive physical property measurement system. The longitudinal resistivity decreased with decreasing temperature, exhibiting metallic properties. Figure 2 The anomalous Hall resistance exhibits a sign reversal (from negative to positive) near 150 K when the magnetic field is perpendicular to the ab crystal plane. This phenomenon indicates that the temperature response of the spin structure differs under different magnetic field directions, further confirming the multi-field tunability of the helical magnetic state.

[0057] Device fabrication and evolution of inductor signal detection

[0058] Micro-circuit devices are fabricated along the c-axis of a single crystal using a focused ion beam etching system (Thermo Fisher Scientific). Figure 4 The device has a width of approximately 3–5 μm and a thickness of approximately 1 μm. Impedance measurements were performed using a lock-in amplifier with a four-terminal method: an alternating current (frequency 532 Hz–7721 Hz, amplitude 0.1 mA–5 mA) was applied to the longitudinal channel, and the voltage was measured in the transverse channel.

[0059] After removing the background signal, the inductance signals under different magnetic fields are obtained. Figure 5 The results show that when the magnetic field direction is parallel to or perpendicular to the c-axis, the inductance value exhibits a significant jump at the magnetic state transition point. Figure 6 The results show that at the same frequency, increasing the AC current amplitude (from 0.5mA to 2mA) enhances the inductance signal; at a fixed current amplitude, changing the frequency (532Hz–7721Hz) results in a non-monotonic change in inductance. These phenomena confirm that the inductance signal originates from the evolved electromagnetic field induced by the intrinsic magnetic state transition of the helical magnetic structure, rather than a parasitic effect. Furthermore, comparing the inductance per unit size of the device with existing candidate materials for evolved inductors demonstrates the device's advantages in room temperature stability and high inductance.

[0060] Figure 7The inductance signal extracted from the transport device along the b-axis of Fe3Ga4 single crystal is given. Compared with the current along the c-axis, the magnitude of the generated inductance is reduced, indicating that preferably selecting the c-axis (helical axis) to apply the current helps to increase the magnitude of the generated inductance.

[0061] Example 2

[0062] This embodiment is basically the same as Example 1, except that the preparation parameters are as follows: the Fe:Ga molar ratio is 40:60, the temperature is raised to 1200℃ and held for 12 hours, then rapidly cooled to 910℃ for 1 hour, and then lowered to 840℃ at a rate of 2℃ / h and held for 1 day. The resulting single crystal is also a black metallic parallelepiped with a size of about 1 mm. The XRD pattern is consistent with that of Example 1, and the magnetic and evolved inductance signal characteristics are the same as those of Example 1.

[0063] Example 3

[0064] This embodiment is basically the same as Embodiment 1, except that: the Fe:Ga molar ratio is 45:55, the temperature is raised to 1150℃ and held for 30 hours, then rapidly cooled to 890℃ for 8 hours, and then lowered to 820℃ at a rate of 0.5℃ / h, and held for 3 days. The resulting single crystal size is approximately 1.2 mm, and all properties are consistent with those of Embodiment 1.

[0065] Comparative Example 1

[0066] This comparative example used the same procedure as Example 1, but the Fe:Ga molar ratio was 32:68. As a result, Fe3Ga4 single crystals could not be obtained, and the powder XRD diffraction results ( Figure 8 (a) shows that the main phase is FeGa3, and a large number of FeGa3 impurity peaks appear in the XRD spectrum.

[0067] Comparative Example 2

[0068] This comparative example is basically the same as Example 1, except that the temperature was reduced from 900°C to 850°C (instead of 830°C) at a rate of 1°C / h, and held at that temperature for 2 days. Powder XRD diffraction results ( Figure 8 (b) indicates that the yield of Fe3Ga4 single crystals in the obtained product is significantly reduced, and it is difficult to peel off complete parallelepiped single crystals from the surface of the alloy block. XRD analysis shows that there are a large number of FeGa3 impurity phases in the product, and the crystal orientation is inconsistent, making it unsuitable for subsequent device fabrication. This indicates that when the target cooling temperature is too high (850℃), it is impossible to enter the stable crystallization range of Fe3Ga4, resulting in the formation of impurity phases.

Claims

1. A method for preparing helical magnetic single crystal Fe3Ga4, characterized in that, Includes the following steps: (1) Fe and Ga are loaded into a crucible in a molar ratio of Fe:Ga=(40-45):(55-60), and then the crucible is placed in a quartz tube, vacuumed and sealed. (2) Heat the quartz tube to melt Fe and Ga; then rapidly cool it to 890-910℃; then cool it from 890-910℃ to 820-840℃ at a rate of 0.5-2℃ / h and hold it at that temperature; (3) Then, centrifuge at 820-840℃ and then cool to room temperature.

2. The preparation method according to claim 1, wherein, The purity of both Fe and Ga is greater than 99.9%; Preferably, the vacuuming includes controlling the vacuum level of the quartz tube to 5 × 10⁻⁶. -4 Below Pa.

3. The preparation method according to claim 1, wherein, The melting of Fe and Ga in step (2) includes heating the quartz tube from room temperature to 1000-1200°C over 5-10 hours and holding it at that temperature for 10-30 hours.

4. The preparation method according to claim 1, wherein, The rapid cooling in step (2) includes cooling the quartz tube to 890-910℃ in 1-8 hours; Preferably, the heat preservation in step (2) is carried out for 1-3 days.

5. A spiral magnetic single crystal Fe3Ga4, characterized in that, The single crystal is prepared by any one of claims 1-4, and the single crystal is a black parallelepiped with a metallic luster, and its six outer surfaces have stable crystallographic orientations, wherein the Miller indices of the three non-equivalent outer surfaces are (001), (11-1), and (-111).

6. The spiral magnetic single crystal Fe3Ga4 according to claim 5, wherein, The single crystal is a monoclinic crystal system, with space group C2 / m and group number 12.

7. The spiral magnetic single crystal Fe3Ga4 according to claim 5, wherein, The (001) crystal plane of the single crystal was characterized using Cu target Kα diffraction. The X-ray diffraction pattern, expressed in 2θ angles, showed diffraction peaks at 23.68°, 35.75°, 48.25°, 61.38°, 75.49°, and 91.09°. The measurement error of the 2θ angle was ±0.01°.

8. The spiral magnetic single crystal Fe3Ga4 according to claim 5, wherein, When the current is along the [1-10] crystal orientation and the magnetic field is perpendicular to the ab plane of the single crystal, the anomalous Hall conductance is reversed near 150K.

9. The spiral magnetic single crystal Fe3Ga4 according to claim 5, wherein, The single crystal maintains a helical magnetic order within a temperature range of 70K to 360K.

10. The application of any one of claims 5-9 in the preparation of a derived inductor.

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