Anti-backflow device for semiconductor equipment, method of use, piping system

Abstract

A backflow prevention device, method of use, piping system, and apparatus for semiconductor equipment are disclosed. The backflow prevention device is used to seal and connect at least one of a gas supply line and a gas exhaust line, and includes a valve; a Tesla valve, the positive input end of which is connected to the second end of the valve; a heating element surrounding the channel of the Tesla valve; the positive output end of the channel for connection to the exhaust line; and / or, the valve for connection to the gas supply line. The backflow prevention device can meet the requirements of the exhaust stage of the process for the gas extraction or supply speed. In the presence of backflow or a tendency for backflow, it can reduce the backflow speed of the gas through the reverse high-flow-resistance Tesla valve, delaying the time for the backflowing gas to reach the valve. When the gas needs to flow from the positive output end of the channel to the first end of the valve, it can limit the effective flow conduction to a small range. Furthermore, the heating element can also remove deposits on the inner wall of the channel of the Tesla valve during the maintenance stage of the backflow prevention device.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more particularly to an anti-backflow device, a method of use, and a piping system for semiconductor equipment. Background Technology

[0002] In semiconductor manufacturing, many processes (such as deposition and etching) generate a large number of byproducts. These byproducts typically enter the exhaust pipes (e.g., vacuum foreline) along with the process exhaust gases. Because the pressure inside the exhaust pipe is between the process chamber pressure and the vacuum pump inlet pressure, the gas flow rate in the exhaust pipe is relatively low. Consequently, byproducts tend to deposit inside the exhaust pipe, forming contaminants.

[0003] Furthermore, when pressure fluctuations occur in the piping system, process exhaust gas and byproducts in the vacuum exhaust line can easily flow back into the process gas supply line, thus contaminating the process gas supply line. Therefore, anti-backflow devices are usually installed between the process gas supply line and the vacuum exhaust line.

[0004] However, current anti-backflow devices still need improvement. Summary of the Invention

[0005] The problem addressed by the embodiments of the present invention is to provide an anti-backflow device, a method of use, and a piping system for semiconductor devices, so as to improve the anti-backflow device.

[0006] To address the aforementioned problems, embodiments of the present invention provide an anti-backflow device for a semiconductor device for sealingly connecting at least one of a gas supply line and an exhaust line, comprising: a valve having a first end and a second end; a Tesla valve having a channel, wherein the positive input end of the channel is sealed to the second end of the valve; and a heating element surrounding the channel of the Tesla valve; wherein the positive output end of the channel and the first end of the valve satisfy at least one of the following conditions: the positive output end of the channel is used for sealingly connecting to the exhaust line; and the first end of the valve is used for connecting to the gas supply line.

[0007] Optionally, when the first end of the valve is used to connect to the gas supply line, the anti-backflow device further includes: a cooling component surrounding the Tesla valve and the heating component, or surrounding the Tesla valve and located between the Tesla valve and the heating component.

[0008] Optionally, the cooling component includes: a cooling pipe surrounding the periphery of the Tesla valve, and a cooling medium flowing through the cooling pipe; the heating component includes a heating wire, a heating band, or a heating sleeve; when the heating component includes a heating wire, the heating wire is embedded in the side wall of the channel of the Tesla valve, and the cooling component surrounds the periphery of the Tesla valve and the heating component; when the heating component includes a heating band or a heating sleeve, the cooling component surrounds the periphery of the Tesla valve, and the heating component covers the side wall of the cooling component.

[0009] Optionally, the roughness of the inner wall of the channel of the Tesla valve ranges from 0.15 micrometers to 0.8 micrometers.

[0010] Optionally, the inner wall of the channel of the Tesla valve is a coated surface, and the material constituting the coated surface is a porous material.

[0011] Optionally, the Tesla valve is made of a corrosion-resistant material, or the inner wall of the channel of the Tesla valve is a coated surface, and the material constituting the coated surface is a corrosion-resistant material.

[0012] Accordingly, embodiments of the present invention also provide a method for using an anti-backflow device, comprising: providing an anti-backflow device as described in any embodiment of the present invention; during the maintenance phase of the anti-backflow device, closing the valve and heating the heating component to a first preset temperature, so that the deposits deposited on the inner wall of the channel of the Tesla valve can be thermally decomposed into gaseous products, or so that the deposits deposited on the inner wall of the channel of the Tesla valve can be thermally re-vaporized or sublimated into gaseous products; after heating the heating component to the first preset temperature, opening the valve and introducing a purging gas into the anti-backflow device, so that the purging gas blows the re-vaporized or sublimated gaseous products into the downstream pipeline, or, after heating the heating component to the first preset temperature, opening the valve and sequentially introducing a reaction gas and a purging gas into the backflow device, so that the gaseous products react chemically with the reaction gas and are then purged into the downstream pipeline by the purging gas, or, after the heating component reaches the first preset temperature, using a vacuum pump connected to the anti-backflow device to remove the gaseous products.

[0013] Optionally, in the step of heating the heating element to a first preset temperature, the first preset temperature ranges from 80 degrees Celsius to 180 degrees Celsius.

[0014] Optionally, in the step of providing the anti-backflow device, if the first end of the valve is used to connect to the gas supply line, the anti-backflow device further includes: a cooling component surrounding the periphery of the Tesla valve and the heating component, or surrounding the periphery of the Tesla valve and located between the Tesla valve and the heating component; if, during the gas backflow stage before the maintenance stage of the anti-backflow device, the backflow gas includes condensable substances, the method of using the anti-backflow device further includes: bringing the cooling component to a second preset temperature so that the condensable substances condense and deposit on the channel surface of the Tesla valve, and closing the valve.

[0015] Accordingly, embodiments of the present invention also provide a piping system for a semiconductor device, comprising: one or more process gas supply pipelines, an anti-backflow device according to any embodiment of the present invention corresponding to the process gas supply pipelines, and a vacuum exhaust pipeline; the input end of the process gas supply pipeline is used to connect to a gas source providing process gas, one output end of the process gas supply pipeline is used to be sealed to a process chamber, and the other output end is sealed to a valve of the anti-backflow device; the forward output end of the Tesla valve channel of the anti-backflow device is sealed to the input end of the vacuum exhaust pipeline; the output end of the vacuum exhaust pipeline is used to connect to a vacuum pump.

[0016] Compared with the prior art, the technical solution of the embodiments of the present invention has the following advantages: The anti-backflow device for semiconductor devices provided in this embodiment of the invention is used to seal and connect at least one of a gas supply line and an exhaust line, comprising: a valve having a first end and a second end, a Tesla valve having a channel, the positive input end of the Tesla valve being sealed and connected to the second end of the valve, and a heating element surrounding the channel of the Tesla valve. When the first end of the valve is used for a sealed connection with the gas supply line, during the process venting stage, the process gas can enter the downstream pipeline through the channel of the forward-facing low-resistance Tesla valve. This allows the anti-backflow device to meet the requirements of higher extraction or supply speeds during the process venting stage, thereby improving production efficiency. Furthermore, when process tail gas and byproducts in the downstream pipeline of the anti-backflow device flow back into the gas supply line, or when there is a tendency for backflow, the reverse-facing high-resistance Tesla valve can reduce the backflow velocity and delay the time it takes for the backflowing gas to reach the valve. This provides an additional window of time for closing the valve and taking other measures, thus effectively preventing process tail gas and byproducts in the downstream pipeline from flowing back into the gas supply line. Consequently, it also reduces the contamination of the gas supply line, thereby improving wafer production quality and yield. When the forward output end of the channel is used for a sealed connection with the venting line, and the gas needs to flow from the forward output end of the channel to the first end of the valve, the effective flow conductance of the gas can be limited to a small range. Furthermore, the heating components surrounding the Tesla valve's channel can heat the channel during the maintenance phase of the anti-backflow device. This allows deposits on the inner wall of the Tesla valve's channel to decompose into gaseous products, or to re-vaporize or sublimate into gaseous products. The decomposed gaseous products can first react chemically with the reaction gas introduced into the anti-backflow device, and then be purged into the downstream pipeline by the purge gas introduced into the anti-backflow device. Alternatively, the re-vaporized or sublimated gaseous products can be directly purged into the downstream pipeline by the purge gas introduced into the anti-backflow device, or the gaseous products can be removed by a vacuum pump connected to the anti-backflow device. This helps reduce the probability of the Tesla valve's channel becoming blocked, thereby extending the Tesla valve's service life. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of an embodiment of the anti-backflow device for semiconductor equipment of the present invention; Figure 2 yes Figure 1 A magnified view of a portion of region A under process venting conditions; Figure 3 yes Figure 1 A magnified view of region A under gas reflux conditions; Figure 4 This is a flowchart of an embodiment of the method of using the anti-backflow device of the present invention; Figure 5 This is a schematic diagram of the piping system of a semiconductor device according to an embodiment of the present invention; Figure 6 This is a schematic diagram of the structure of an embodiment of the semiconductor device of the present invention; Figure 7 This is a functional block diagram of another embodiment of the semiconductor device of the present invention. Detailed Implementation

[0018] Currently, the following methods are commonly used to prevent process exhaust gas and byproducts in the exhaust pipeline from flowing back into the gas supply pipeline: 1. Install a flow restrictor (orifice) between the gas supply line and the exhaust line to form a resistance barrier by utilizing the throttling pressure drop generated by the flow restrictor. This allows the high flow resistance at the flow restrictor to suppress the backflow of process tail gas and by-products from the exhaust line to the gas supply line when the pipeline system experiences pressure fluctuations or when there is a backflow tendency of process tail gas and by-products from the exhaust line to the gas supply line.

[0019] 2. Install multiple valves connected in series between the gas supply line and the exhaust line.

[0020] 3. Inject inert gas from the exhaust pipe side to the gas supply pipe side to form an air curtain.

[0021] Research has found that if a flow-limiting orifice is installed between the gas supply and exhaust lines, a small orifice diameter (e.g., 0.05 mm) is typically used to generate sufficient pressure drop at the orifice to suppress backflow. This results in a smaller effective conductance when gas flows from the gas supply line to the exhaust line, affecting the extraction or supply speed in the process and making the orifice prone to blockage. If multiple valves are installed in series between the gas supply and exhaust lines, the risk of malfunctions between the two lines increases due to the presence of moving parts in each valve, impacting production efficiency. Frequent valve activation can also negatively affect process efficiency. Furthermore, injecting inert gas from the exhaust line to the gas supply line to form an air curtain increases production costs, and the injected gas may interfere with local airflow, causing backflow.

[0022] To address the aforementioned technical problems, embodiments of the present invention provide an anti-backflow device for semiconductor devices. The anti-backflow device is used to seal and connect at least one of a gas supply line and an exhaust line, comprising: a valve having a first end and a second end; a Tesla valve having a channel; the positive input end of the Tesla valve being sealed and connected to the second end of the valve; and a heating element surrounding the channel of the Tesla valve. When the first end of the valve is used for a sealed connection with the gas supply line, during the process venting stage, the process gas can enter the downstream pipeline through the channel of the forward-facing low-resistance Tesla valve. This allows the anti-backflow device to meet the requirements of higher extraction or supply speeds during the process venting stage, thereby improving production efficiency. Furthermore, when process tail gas and byproducts in the downstream pipeline of the anti-backflow device flow back into the gas supply line, or when there is a tendency for backflow, the reverse-facing high-resistance Tesla valve can reduce the backflow velocity and delay the time it takes for the backflowing gas to reach the valve. This provides an additional window of time for closing the valve and taking other measures, thus effectively preventing process tail gas and byproducts in the downstream pipeline from flowing back into the gas supply line. Consequently, it also reduces the contamination of the gas supply line, thereby improving wafer production quality and yield. When the forward output end of the channel is used for a sealed connection with the venting line, and the gas needs to flow from the forward output end of the channel to the first end of the valve, the effective flow conductance of the gas can be limited to a small range. Furthermore, the heating components surrounding the Tesla valve's channel can heat the channel during the maintenance phase of the anti-backflow device. This allows deposits on the inner wall of the Tesla valve's channel to decompose into gaseous products, or to re-vaporize or sublimate into gaseous products. The decomposed gaseous products can first react chemically with the reaction gas introduced into the anti-backflow device, and then be purged into the downstream pipeline by the purge gas in the anti-backflow device. Alternatively, the re-vaporized or sublimated gaseous products can be directly purged into the downstream pipeline by the purge gas introduced into the anti-backflow device, or the gaseous products can be removed by a vacuum pump connected to the anti-backflow device. This helps reduce the probability of the Tesla valve's channel becoming blocked, thereby extending the Tesla valve's service life.

[0023] To make the above-mentioned objects, features and advantages of the embodiments of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0024] Figure 1 This is a schematic diagram of an embodiment of the anti-backflow device for semiconductor equipment of the present invention. Figure 2 yes Figure 1 A magnified view of a portion of region A under process venting conditions. Figure 3 yes Figure 1 A magnified view of region A under gas reflux conditions.

[0025] refer to Figures 1 to 3 The anti-backflow device 200 of the semiconductor device is used to seal and connect at least one of the gas supply line 100 and the exhaust line 300, comprising: a valve 210 having a first end 211 and a second end 212; a Tesla valve 220 having a channel, and the positive input end 221 of the channel being sealed and connected to the second end 212 of the valve 210; and a heating element 260 surrounding the channel of the Tesla valve 220; wherein the positive output end 222 of the channel and the first end 211 of the valve 210 satisfy at least one of the following conditions: the positive output end 222 of the channel is used for a sealed connection with the exhaust line 300; and the first end 211 of the valve 210 is used for a connection with the gas supply line 100.

[0026] It should be noted that, Figure 1 This is a schematic diagram of the anti-backflow device 200 when the first end 211 of valve 210 is used for a sealed connection with the gas supply line 100. Figure 1 The direction of the dashed arrow in the diagram indicates the flow direction of the process gas during the process venting stage.

[0027] Valve 210 is used to open during the process exhaust stage and to close when process tail gas and by-products in the exhaust line are backflowing or have a tendency to backflow, or to open when analyzing the composition of process tail gas and by-products and to close when process tail gas and by-products contaminate or are about to contaminate the analyzer.

[0028] In some embodiments, valve 210 is an on / off valve, including a diaphragm valve, ball valve, butterfly valve, or gate valve.

[0029] When the first end 211 of valve 210 is used for a sealed connection with the gas supply line 100, during the process venting stage, the process gas can enter the downstream pipeline (e.g., venting line 300) through the passage of the forward-facing low-flow-resistance Tesla valve 220. Figure 2 (As indicated by the blue arrow in the middle), thus enabling the anti-backflow device 200 to meet the requirements of higher extraction or supply speeds during the process exhaust stage, thereby improving production efficiency and preventing the backflow of process tail gas and by-products in the downstream pipeline (e.g., exhaust pipeline 300) to the supply pipeline 100 (e.g., as shown by the blue arrow in the middle). Figure 3In cases where backflow is indicated by the blue arrow or a backflow tendency exists, the high-resistance Tesla valve 220 can reduce the backflow velocity of the gas, delaying the time it takes for the backflowing gas to reach valve 210. This provides an additional window of time for closing valve 210 and taking other measures, thereby improving the backflow effect of process tail gas and by-products in the downstream pipeline of the anti-backflow device 200 to the gas supply pipeline 100. Consequently, it improves the contamination effect of the gas supply pipeline 100, which in turn helps to improve wafer production quality and yield. Moreover, the high flow resistance of the Tesla valve 220 during backflow can also increase the probability of by-product deposition on the inner wall 228 of the channel of the Tesla valve 220, which also helps to reduce by-product deposition on the valve surface of valve 210, and thus helps to improve the service life of valve 210. When the positive output end 222 of the channel is used for a sealed connection with the exhaust pipeline 300, and the gas needs to flow from the positive output end 222 of the channel to the first end 211 of valve 210, the effective flow conduction of the gas can be limited to a small range.

[0030] Understandably, due to the simple structure of the Tesla valve 220, with no moving parts, there is no mechanical wear, and it does not require connection to an external power supply or a complex control system. Therefore, the Tesla valve 220 has good reliability and a low probability of failure. Consequently, its maintenance requirements and costs are also low, which also helps to reduce the probability of contaminants being introduced into the gas supply line 100 due to maintenance of the Tesla valve 220.

[0031] Among them, the positive input terminal 221 of the Tesla valve 220 channel also serves as the negative output terminal of the Tesla valve 220 channel, and the positive output terminal 222 of the Tesla valve 220 channel also serves as the negative input terminal of the Tesla valve 220 channel.

[0032] In some embodiments, the anti-backflow device 200 is used to seal the connection between the process gas supply line and the vacuum exhaust line; correspondingly, the process gas supply line serves as the supply line 100, and the vacuum exhaust line serves as the exhaust line 300.

[0033] In other embodiments, the anti-backflow device is used to connect to the sampling line; wherein, the positive output end of the Tesla valve channel (i.e., the reverse input end of the Tesla valve channel) is used to connect to the vacuum exhaust line connecting the process chamber through a sampling line, and the first end of the valve is used to connect to the analytical instrument through another sampling line.

[0034] In other embodiments, the anti-backflow device is also used to be installed on the purge pipeline; the first end of the valve is used to connect to the purge gas source through a purge pipeline, and the positive output end of the Tesla valve channel is used to connect to the downstream pipeline through another purge pipeline.

[0035] It is understandable that anti-backflow devices can also be applied to other situations where backflow prevention is required. For example, in the case where multiple process chambers share a central vacuum system, anti-backflow devices can be installed on the branch lines of each process chamber connected to the central vacuum delivery pipeline to prevent cross-contamination between chambers.

[0036] It should be noted that the Tesla valve 220 has a high flow resistance during backflow, which can easily lead to the deposition of byproducts on the inner wall 228 of the Tesla valve channel.

[0037] In some embodiments, the Tesla valve 220 is made of a corrosion-resistant material. Accordingly, the corrosion-resistant material forms the inner wall 228 of the channel that is in contact with the gas, making the inner wall 228 of the channel less susceptible to corrosion by the gas, thereby helping to further improve the service life of the Tesla valve 220.

[0038] Specifically, corrosion-resistant materials include one or more of stainless steel and nickel-based alloys.

[0039] In other embodiments, the inner wall of the Tesla valve channel is covered with a coating made of a corrosion-resistant material.

[0040] The coating made of corrosion-resistant material can protect the inner wall of the channel, and the rest of the Tesla valve can be made of other conventional metal materials, which can not only ensure the corrosion resistance of the inner wall of the channel, but also reduce the overall processing cost of the Tesla valve.

[0041] As an example, the Tesla valve is made of aluminum alloy, and the coating material includes aluminum oxide. Aluminum oxide can be formed through anodizing or other suitable methods.

[0042] In some embodiments, the Tesla valve 220 includes a main pipeline 224 and a detour pipeline 225, both ends of which are connected to the main pipeline 224.

[0043] Main pipeline 224 is used to provide the main gas passage for gas from gas supply pipeline 100 to downstream pipelines.

[0044] The detour pipe 225 is used to divert part of the gas, and to redirect the gas in the detour pipe 225 when the gas flows back from the downstream pipe to the gas supply pipe 100 or when there is a tendency for backflow. This causes the gas in the detour pipe 225 to collide with the gas in the main pipe 224 at their interface, generating a huge local flow resistance, thereby reducing the backflow velocity and suppressing or preventing backflow from occurring.

[0045] It should be noted that the diameter ratio of the main pipe 224 to the bypass pipe 225 should not be too small or too large. If the diameter ratio of the main pipe 224 to the bypass pipe 225 is too small, it will easily lead to an excessively large diameter of the bypass pipe 225, while the diameter of the main pipe 224 will be too small. This will correspondingly affect the forward flow conductance during the process exhaust stage, and consequently, the effective pumping speed during the process exhaust stage. If the diameter ratio of the main pipe 224 to the bypass pipe 225 is too large, it will easily lead to an excessively small diameter of the bypass pipe 225, which will correspondingly lead to poor effectiveness in reducing the gas backflow velocity, thus resulting in poor backflow suppression. Therefore, as an example, the diameter ratio of the main pipe 224 to the bypass pipe 225 is in the range of 1.5:1 to 2.7:1.

[0046] In one specific embodiment, the Tesla valve 220 includes multiple unit modules 223. Each unit module 223 includes a main pipeline 224 and a detour pipeline 225. Both ends of the detour pipeline 225 are connected to the main pipeline 224 and include an arc segment 227 and a straight segment 226. One end of the arc segment 227 is connected to the side of the main pipeline 224 near the positive input end 221, and the other end of the arc segment 227 is connected to the straight segment 226. The end of the straight segment 226 facing away from the arc segment 227 is connected to the side of the main pipeline 224 near the positive output end 222.

[0047] When gas flows in the forward direction in the channel of Tesla valve 220, the arc segment 227 is used to divert the gas, so that some gas can enter the detour line 225, and the straight segment 226 is used to allow the gas in the arc segment 227 to flow into the main line 224.

[0048] When gas flows in the reverse direction in the channel of Tesla valve 220, the straight section 226 is used to divert the gas, allowing some gas to enter the detour line 225. The curved section 227 is used to redirect the gas in the detour line 225, and to cause the gas in the detour line 225 and the gas in the main line 224 to collide at the connection point between the curved section 227 and the main line 224, thereby reducing the flow velocity of the reverse gas and giving the reverse gas a higher reverse flow resistance when flowing along Tesla valve 220.

[0049] It should be noted that within the same unit module, the first included angle θ1 between the straight segment 226 and the main pipe 224 is relatively small, meaning the bifurcation angle between the main pipe 224 and the detour pipe 225 is small. This is beneficial for maintaining low forward flow resistance while allowing more gas to flow into the detour pipe 225 during backflow. Consequently, it increases the degree of collision between the gas in the detour pipe 225 and the gas in the main pipe 224 during backflow, thereby further improving reverse flow resistance. Therefore, in some embodiments, the first included angle θ1 between the straight segment 226 and the main pipe 224 within the same unit module 223 ranges from 8° to 15°. As an example, in the same unit module 223, the first included angle θ1 between the straight segment 226 and the main pipe 224 is 10°.

[0050] It should also be noted that within the same unit module 223, the second included angle θ2 between the arc segment 227 and the main pipeline 224 is relatively large, meaning the bending angle of the detour pipeline 225 is relatively large. This is beneficial for generating a higher reverse pressure drop when the backflow gas velocity is high, thereby helping to reduce the backflow gas velocity. Therefore, in some embodiments, the second included angle θ2 between the arc segment 227 and the main pipeline 224 within the same unit module 223 ranges from 60° to 130°.

[0051] It is also important to note that since the Tesla valve 220 comprises multiple unit modules 223, the length of each unit module is typically between 20mm and 100mm. If the Tesla valve 220 is too short, for example, if it comprises only one unit module 223, it may result in poor effectiveness in reducing the backflow velocity of the gas. If the Tesla valve 220 is too long, it may increase the forward flow resistance, thereby affecting the extraction or supply speed during the process exhaust stage. Furthermore, if the Tesla valve 220 is too long, it may also result in an excessively large dead volume inside the valve, thus prolonging the time spent replacing the process gas and the purging time for each stage of the pipeline. Therefore, in some embodiments, the length L1 of the Tesla valve 220 ranges from 40mm to 400mm.

[0052] In some embodiments, the channel of the Tesla valve 220 has a three-dimensional spiral structure, that is, the included angle between adjacent unit modules 223 is less than 180°.

[0053] In some embodiments, when the first end 211 of the valve 210 is used to connect to the gas supply line 100, the anti-backflow device 200 further includes: a cooling component 270 surrounding the periphery of the Tesla valve and the heating component, or surrounding the periphery of the Tesla valve 220 and located between the Tesla valve 220 and the heating component 260.

[0054] The cooling component 270 is used to reduce the channel temperature of the Tesla valve 220 during the gas backflow stage if the backflow gas carries condensable contaminants. This causes the condensable contaminants in the backflow gas to condense and deposit on the inner wall of the channel of the Tesla valve 220, which helps to further reduce the probability of condensable contaminants backflowing into the gas supply line 100, thereby improving the effect of further reducing the contamination of the gas supply line 100.

[0055] Among them, condensable pollutants refer to: solid reaction precursors, liquid reaction precursors, reaction byproducts such as siloxanes, halides, ammonium salts, etc.

[0056] Specifically, the cooling component 270 includes a cooling pipe 271 surrounding the Tesla valve 220 and a cooling medium 272 flowing through the cooling pipe 271, which helps to reduce the difficulty of manufacturing the cooling component 270.

[0057] More specifically, the cooling conduit 271 surrounds the passage of the Tesla valve 220 in a ring-like structure. In other embodiments, the cooling conduit spirals around the passage of the Tesla valve, i.e., the cooling conduit has a spiral structure.

[0058] It should be noted that the cooling medium 272 includes water. In other embodiments, other suitable cooling media may also be used.

[0059] It should be noted that the roughness (Ra) of the inner wall 228 of the channel of the Tesla valve 220 should not be too small or too large. If the roughness of the inner wall 228 of the channel of the Tesla valve 220 is too small, it is easy for condensable substances in the backflow gas to be difficult to deposit on the inner wall 228 of the channel; if the roughness of the inner wall 228 of the channel of the Tesla valve 220 is too large, it is easy to increase the forward flow resistance of the Tesla valve 220, which can easily affect the gas extraction speed or gas supply speed in the process exhaust stage. Therefore, in some embodiments, the roughness (Ra) of the inner wall 228 of the channel of the Tesla valve 220 ranges from 0.15 micrometers to 0.8 micrometers.

[0060] In other embodiments, the inner wall of the Tesla valve channel is covered with a coating, the coating material including porous materials, catalytic materials, hydrophobic materials, or hydrophilic materials.

[0061] Porous materials can form coatings with a porous structure that is uniformly distributed. This increases the surface area of ​​the channel's inner wall, consequently increasing the probability of condensable substances in the backflow gas depositing on the channel's inner wall. Furthermore, it facilitates the uniform distribution of these deposits on the channel's inner wall 228, further reducing the probability of the Tesla valve's channel being blocked by deposits. Porous materials can include alumina, yttrium oxide, titanium dioxide, zirconium oxide, etc.

[0062] Catalytic materials can catalytically oxidize and decompose organic pollutants (such as hydrocarbons and oil vapors) in backflow gas into harmless gases such as carbon dioxide (CO2) and water (H2O) under specific conditions (e.g., specific temperatures or photoexcitation conditions), and these gases are also easier to remove by a vacuum pump. Catalytic materials can include: noble metal catalysts (e.g., nanoparticles of noble metal catalysts such as platinum, palladium, and rhodium), metal oxide catalysts (e.g., titanium dioxide, manganese oxide, and vanadium pentoxide), and composite catalysts [e.g., platinum / titanium dioxide (Pt / TiO2), palladium / aluminum oxide (Pd / Al2O3)].

[0063] Hydrophobic or hydrophilic materials can fundamentally alter the wetting behavior of liquids (such as oil droplets condensed from backflowing gas) on the inner wall 228 of the channel of the Tesla valve 220 through extreme surface energy and micro / nano rough structures, making it easier for the liquid condensed from backflowing gas to be pumped away by a vacuum pump. Hydrophilic materials are defined as materials with a water contact angle of less than 10°, while hydrophobic materials are defined as materials with a water contact angle greater than 150° and a roll-off angle of less than 10°. Hydrophobic materials can include fluorinated polymers (such as PTFE), silica nanoparticles, etc. Hydrophilic materials can include titanium dioxide nanoparticles, etc.

[0064] In other words, when the inner wall of the Tesla valve channel is covered by the coating of the aforementioned material, the probability of the Tesla valve channel being blocked by deposits can be further reduced, and the by-product deposition on the valve surface of valve 210 can be further reduced.

[0065] Specifically, the coating thickness ranges from 10 micrometers to 100 micrometers to reduce the impact on effective flow conduction during gas flow.

[0066] In some embodiments, the anti-backflow device 200 further includes a first conduit 230, which is sealed between the second end of the valve 210 and the positive input end 221 of the Tesla valve 220.

[0067] The first pipeline 230 is used to connect valve 210 and Tesla valve 220, thereby reducing the difficulty of connecting valve 210 and Tesla valve 220.

[0068] Furthermore, the first pipeline 230 increases the distance between the positive input end 221 of the Tesla valve 220 channel and the second end 212 of the valve 210. When gas backflow occurs, it delays the time for the backflowing gas to reach the second end 212 of the valve 210 from the positive input end 221 of the Tesla valve 220, thereby providing more window time for closing the valve 210 and further reducing the probability of process tail gas and by-products entering the gas supply pipeline 100.

[0069] It should be noted that the length L2 of the first conduit 230 should not be too short or too long. If the length L2 of the first conduit 230 is too short, it may lead to poor effect in delaying the flow of backflow gas from the positive input end of the Tesla valve 220 to the second end 212 of the valve 210; if the length L2 of the first conduit 230 is too long, it may affect the effective pumping speed during the process venting stage and may also lead to excessively high costs for the first conduit 230. Therefore, as an example, the length L2 of the first conduit 230 ranges from 10 mm to 200 mm.

[0070] In some embodiments, the anti-backflow device 200 further includes: a second pipeline 240, which is sealed to the positive output end 222 of the Tesla valve 220; the Tesla valve 220 is detachably connected to the first pipeline 230 and the second pipeline 240 respectively, which helps to reduce the difficulty of repairing or replacing the Tesla valve 220, and also helps to reduce the impact of repairing or replacing the Tesla valve 220 on the air supply pipeline 100 and the exhaust pipeline 300.

[0071] Specifically, the Tesla valve 220 is detachably connected to the first pipeline 230 and the second pipeline 240 via the vacuum flange connector 250.

[0072] The vacuum flange connector 250 has good sealing reliability.

[0073] More specifically, the vacuum flange connector 250 includes CF type flanges, ISO-K type flanges, ISO-KF type flanges, and ISO-F type flanges, etc.

[0074] In other embodiments, the Tesla valve can also be detachably connected to the first or second pipeline via a ferrule connection, quick-release locking ring connection, or the like.

[0075] The heating element 260 surrounding the channel of the Tesla valve can heat the channel of the Tesla valve 220 during the maintenance phase of the anti-backflow device 200. This allows the deposits on the inner wall 228 of the channel of the Tesla valve 220 to decompose into gaseous products, or to re-vaporize or sublimate into gaseous products. The decomposed gaseous products can first react chemically with the reaction gas introduced into the anti-backflow device 200, and then be purged into the downstream pipeline by the purging gas introduced into the anti-backflow device 200. Alternatively, the re-vaporized or sublimated gaseous products can be directly purged into the downstream pipeline by the purging gas introduced into the anti-backflow device 200. Or, the gaseous products can be removed by the vacuum pump 30 connected to the anti-backflow device 200. This helps reduce the probability of the channel of the Tesla valve 220 being blocked, thereby extending the service life of the Tesla valve 220.

[0076] It should be noted that when the anti-backflow device 200 includes a cooling component 270, the heating component 260 can also remove condensable substances deposited on the inner wall 228 of the channel of the Tesla valve 220 during the backflow stage.

[0077] In some embodiments, the heating element 260 includes a heating wire, a heating band, or a heating sleeve; the heating wire, heating band, or heating sleeve are commonly used heating elements in semiconductor manufacturing processes, thereby helping to reduce the manufacturing cost of the anti-backflow device 200. In other embodiments, the heating element may be of other suitable types.

[0078] In one specific embodiment, when the heating element 260 includes a heating wire, the heating wire is embedded in the side wall of the channel of the Tesla valve 220, and the cooling element 270 surrounds the Tesla valve 220 and the heating element 260. This helps to control the overall size of the anti-backflow device, thereby reducing the installation difficulty of the anti-backflow device.

[0079] In another specific embodiment, when the heating component includes a heating band or heating sleeve, the cooling component surrounds the periphery of the Tesla valve, and the heating component covers the side wall of the cooling component. This helps to reduce the difficulty of setting up the heating component, and also helps to reduce the difficulty of repairing or replacing the heating component.

[0080] Accordingly, the present invention also provides a method for using the anti-backflow device. Figure 4 This is a flowchart of an embodiment of the method of using the anti-backflow device of the present invention.

[0081] refer to Figure 4 and in conjunction with references Figures 1 to 3 Step S11: Provide the anti-backflow device 200 according to any embodiment of the present invention; When the first end 211 of valve 210 is used for a sealed connection with the gas supply line 100, during the process venting stage, the process gas can enter the downstream pipeline (e.g., venting line 300) through the passage of the forward-facing low-flow-resistance Tesla valve 220. Figure 2 (As indicated by the blue arrow in the middle), thus enabling the anti-backflow device 200 to meet the requirements of higher extraction or supply speeds during the process exhaust stage, thereby improving production efficiency and preventing the backflow of process tail gas and by-products in the downstream pipeline (e.g., exhaust pipeline 300) to the supply pipeline 100 (e.g., as shown by the blue arrow in the middle). Figure 3In cases where backflow is indicated by the blue arrow or a backflow tendency exists, the high-resistance Tesla valve 220 can reduce the backflow velocity of the gas, delaying the time it takes for the backflowing gas to reach valve 210. This provides an additional window of time for closing valve 210 and taking other measures, thereby improving the effectiveness of preventing process tail gas and by-products in the downstream pipeline of the anti-backflow device 200 from flowing back into the gas supply pipeline 100. Consequently, it also improves the effectiveness of reducing contamination of the gas supply pipeline 100, which in turn helps improve wafer production quality and yield. Moreover, the high flow resistance of the Tesla valve 220 during backflow can also increase the probability of by-product deposition on the inner wall 228 of the channel of the Tesla valve 220, which also helps reduce by-product deposition on the valve surface of valve 210, and further helps improve the service life of valve 210. When the positive output end 222 of the channel is used for a sealed connection with the exhaust pipeline 300, and the gas needs to flow from the positive output end 222 of the channel to the first end 211 of valve 210, the effective flow conduction of the gas can be limited to a small range.

[0082] Understandably, due to the simple structure of the Tesla valve 220, with no moving parts, there is no mechanical wear, and it does not require connection to an external power supply or a complex control system. Therefore, the Tesla valve 220 has good reliability and a low probability of failure. Consequently, its maintenance requirements and costs are also low, which also helps to reduce the probability of contaminants being introduced into the gas supply line 100 due to maintenance of the Tesla valve 220.

[0083] In some embodiments, during the step of providing the anti-backflow device 200, when the first end 211 of the valve 210 is used to connect to the gas supply line 100, the anti-backflow device 200 further includes: a cooling component 270 surrounding the periphery of the Tesla valve 220 and the heating component 260, or surrounding the periphery of the Tesla valve 220 and located between the Tesla valve 220 and the heating component 260.

[0084] The cooling component 270 is used to reduce the channel temperature of the Tesla valve 220 during the gas backflow stage if the backflow gas carries condensable contaminants. This causes the condensable contaminants in the backflow gas to condense and deposit on the inner wall of the channel of the Tesla valve 220, which helps to further reduce the probability of condensable contaminants backflowing into the gas supply line 100, thereby improving the effect of further reducing the contamination of the gas supply line 100.

[0085] Among them, condensable pollutants refer to: solid reaction precursors, liquid reaction precursors, reaction byproducts such as siloxanes, halides, ammonium salts, etc.

[0086] In other embodiments, in the step of providing the anti-backflow device, the inner wall of the channel of the Tesla valve is covered with a coating, the material of which includes porous materials, catalytic materials, hydrophobic materials, or hydrophilic materials.

[0087] Porous materials can form a coating with a porous structure, and the porous structure is evenly distributed, which helps to increase the surface area of ​​the inner wall of the channel. This, in turn, increases the probability of condensable substances in the backflow gas depositing on the inner wall 228 of the channel. Furthermore, it helps to ensure that the deposits of condensable substances are evenly distributed on the inner wall of the channel, thereby further reducing the probability of the Tesla valve 220 being blocked by deposits. Porous materials can include alumina, yttrium oxide, titanium dioxide, zirconium oxide, etc.

[0088] Catalytic materials can catalytically oxidize and decompose organic pollutants (such as hydrocarbons and oil vapors) in backflow gas into harmless gases such as carbon dioxide (CO2) and water (H2O) under specific conditions (e.g., specific temperatures or photoexcitation conditions), and these gases are also easier to remove by a vacuum pump. Catalytic materials can include: noble metal catalysts (e.g., nanoparticles of noble metal catalysts such as platinum, palladium, and rhodium), metal oxide catalysts (e.g., titanium dioxide, manganese oxide, and vanadium pentoxide), and composite catalysts [e.g., platinum / titanium dioxide (Pt / TiO2), palladium / aluminum oxide (Pd / Al2O3)].

[0089] Hydrophobic or hydrophilic materials can fundamentally alter the wetting behavior of liquids (such as oil droplets condensed from backflowing gas) on the inner wall of a Tesla valve channel through extreme surface energy and micro / nano rough structures, making it easier for the liquid condensed from backflowing gas to be pumped away by a vacuum pump. Hydrophilic materials are defined as materials with a water contact angle of less than 10°, while hydrophobic materials are defined as materials with a water contact angle greater than 150° and a roll-off angle of less than 10°. Hydrophobic materials can include fluorinated polymers (such as PTFE) and silica nanoparticles. Hydrophilic materials can include titanium dioxide nanoparticles.

[0090] In other words, when the inner wall of the Tesla valve channel is covered by the coating of the aforementioned material, the probability of the Tesla valve channel being blocked by deposits can be further reduced, and the deposition of by-products on the valve surface can be further reduced.

[0091] Accordingly, in some embodiments, during the gas backflow stage prior to the maintenance stage of the anti-backflow device, if the backflow gas includes a condensable substance, the method of using the anti-backflow device further includes: during the gas backflow stage, bringing the cooling component 270 to a second preset temperature, which is lower than the dew point temperature of the condensable substance, so that the condensable substance condenses and deposits on the channel surface of the Tesla valve 220, and then closing the valve.

[0092] It is understandable that when the temperature of the cooling component 270 reaches the second preset temperature, the temperature of the inner wall 228 of the channel of the Tesla valve 220 is lower than the dew point temperature of the condensable substance.

[0093] It should be noted that, in order to achieve better condensation of the condensable substance on the inner wall 228 of the channel of the Tesla valve 220, the second preset temperature is 20 degrees Celsius lower than the dew point temperature of the condensable substance.

[0094] Accordingly, in one specific embodiment, the coating on the inner wall 228 of the channel of the Tesla valve 220 can further reduce the probability of the channel of the Tesla valve 220 being blocked by deposits during the gas backflow stage, and can further reduce the deposition of by-products on the valve surface of the valve 210.

[0095] refer to Figure 4 and in conjunction with references Figures 1 to 3 Step S12: During the maintenance phase of the anti-backflow device 200, valve 210 is closed and heating element 260 is brought to a first preset temperature so that the deposits deposited on the inner wall 228 of the channel of Tesla valve 220 can be decomposed into gaseous products by heat, or the deposits deposited on the inner wall of the channel of Tesla valve can be re-vaporized or sublimated into gaseous products by heat.

[0096] The deposits deposited on the inner wall of the channel of the Tesla valve can be thermally decomposed into gaseous products, or the deposits deposited on the inner wall of the channel of the Tesla valve can be thermally re-vaporized or sublimated into gaseous products, so as to provide a process basis for subsequent removal of deposits on the inner wall 228 of the channel of the Tesla valve 220.

[0097] Understandably, when the heating element 260 reaches the first preset temperature, the temperature of the inner wall 228 of the channel of the Tesla valve 220 is higher than the temperature at which the deposits on its inner wall 228 can be thermally decomposed. Alternatively, it is higher than the temperature at which the deposits on its inner wall 228 re-vaporize or sublimate.

[0098] As an example, the first preset temperature range is 80 degrees Celsius to 180 degrees Celsius. Within this temperature range, for vacuum pump oil and light organic contaminants, since the pipeline where the anti-backflow device is located is under negative pressure, the vapor pressure on the surface of the medium is significantly increased, and the vacuum pump oil and light organic contaminants can vaporize or sublimate, forming a gas phase flow that can be carried by the purging gas. For high-boiling-point polymer residues, although the above temperature range does not reach their thermal decomposition temperature, it can reach their glass transition temperature (Tg), thereby causing the high-boiling-point polymer residues to soften or become brittle, thus reducing their adhesion to the inner wall 228 of the channel. For specific inorganic byproducts, such as ammonium salts like ammonium chloride (NH4Cl), thermal dissociation reactions can occur at 180°C to generate gaseous ammonia (NH3) and gaseous hydrogen chloride (HCl), which are then discharged from the system.

[0099] It should be noted that the temperature range of 80°C to 180°C is far below the tolerance limit of the metal materials (e.g., stainless steel and nickel-based alloys) used in the Tesla valve 220 body; moreover, it is also below the upper limit of the long-term operating temperature of the materials (e.g., fluororubber, perfluoroether rubber, etc.) of the sealing components between the Tesla valve 220 and other pipelines (e.g., the first pipeline 230, the second pipeline 240). Therefore, a first preset temperature range of 80°C to 180°C is beneficial for improving the service life of the anti-backflow device.

[0100] It should also be noted that the first preset temperature range is 80 degrees Celsius to 180 degrees Celsius, which is less likely to cause violent reaction or combustion of the deposits on the inner wall 228 of the channel of the Tesla valve 220, thereby improving the safety of the anti-backflow device.

[0101] It should also be noted that the heating element 260 requires relatively little time and energy to reach the range of 80 to 180 degrees Celsius, enabling rapid maintenance cycles (e.g., maintenance can be completed within tens of minutes), thereby improving production efficiency. Furthermore, it can also avoid thermal stress problems in the materials of various components in the anti-backflow device caused by high temperatures (e.g., hundreds of degrees Celsius).

[0102] refer to Figure 4 and in conjunction with references Figures 1 to 3Step S13: After the heating element 260 reaches the first preset temperature, open valve 210 and introduce purge gas into the backflow device 200 so that the purge gas will purge the re-vaporized or sublimated gaseous products into the downstream pipeline (e.g., exhaust pipeline 300). Alternatively, after the heating element 260 reaches the first preset temperature, open valve 210 and introduce reaction gas and purge gas into the backflow device 200 in sequence so that the gaseous products react chemically with the reaction gas and are then purged into the downstream pipeline by the purge gas. Alternatively, after the heating element 260 reaches the first preset temperature, the gaseous products are removed by vacuum pump 30 connected to the anti-backflow device 200.

[0103] The heating element 260 surrounding the channel of the Tesla valve can heat the channel of the Tesla valve 220 during the maintenance phase of the anti-backflow device. This allows the deposits on the inner wall of the channel of the Tesla valve 220 to decompose into gaseous products or re-vaporize or sublimate into gaseous products. The gaseous products decomposed by heat can first react chemically with the reaction gas introduced into the anti-backflow device 200, and then be purged into the downstream pipeline by the purging gas introduced into the anti-backflow device 200. Alternatively, the gaseous products that re-vaporize or sublimate can be directly purged into the downstream pipeline by the purging gas introduced into the anti-backflow device 200. Or, the gaseous products can be removed by the vacuum pump 30 connected to the anti-backflow device 200. This helps reduce the probability of the channel of the Tesla valve 220 being blocked, thereby extending the service life of the Tesla valve 220.

[0104] It should be noted that when the anti-backflow device 200 includes a cooling component 270, the heating component 260 can also remove condensable substances deposited on the inner wall 228 of the channel of the Tesla valve 220 during the backflow stage.

[0105] For a detailed description of the reflux device 200 in this embodiment, please refer to the corresponding descriptions in the foregoing embodiments, which will not be repeated here.

[0106] Accordingly, the present invention also provides a piping system for a conductor device. Figure 5 This is a schematic diagram of the piping system of a semiconductor device according to an embodiment of the present invention.

[0107] refer to Figure 5 and in conjunction with references Figures 1 to 4The piping system 10 of the semiconductor device includes: one or more process gas supply lines 100', a backflow device 200 corresponding to the process gas supply line 100' as in any embodiment of the present invention, and a vacuum exhaust line 300'; the input end of the process gas supply line 100' is used to connect to the gas source 11 that provides process gas, one output end of the process gas supply line 100' is used to be sealed to the process chamber 20, and the other output end is sealed to the valve 210 of the anti-backflow device 200; the positive output end 222 of the Tesla valve 220 channel of the anti-backflow device 200 is sealed to the input end of the vacuum exhaust line 300'; the output end of the vacuum exhaust line 300' is used to connect to a vacuum pump.

[0108] in, Figure 5 The direction of the dashed arrow in the diagram indicates the flow direction of the process gas during the process exhaust stage.

[0109] The anti-backflow device 200 of the present invention provides a sealed connection between the process gas supply line 100' and the vacuum exhaust line 300'. The first end 211 of valve 210 is sealed to the process gas supply line 100', the positive input end 221 of Tesla valve 220 is sealed to the second end 212 of valve 210, and the positive output end 222 of Tesla valve 220 is sealed to the vacuum exhaust line 300'. This allows the process gas to enter the vacuum exhaust line 300' through the channel of the forward-facing, low-resistance Tesla valve 220 during the process exhaust stage (e.g., ...). Figure 2 (As indicated by the blue arrow in the middle), thus enabling the anti-backflow device 200 to meet the requirements of higher extraction or supply speeds during the process exhaust stage, thereby improving production efficiency and preventing backflow of process tail gas and by-products in the vacuum exhaust line 300' into the process gas supply line 100' (such as...). Figure 3In cases where there is a backflow tendency (as indicated by the blue arrow in the middle), the backflow velocity of the gas can be reduced by the reverse high flow resistance Tesla valve 220, which delays the time for the backflow gas to reach the valve 210. This provides an additional window of time for closing the valve 210 and taking other measures, thereby improving the effect of preventing process tail gas and by-products in the vacuum exhaust line 300' from flowing back into the process gas supply line 100'. Consequently, it also improves the effect of reducing the contamination of the process gas supply line 100', which in turn helps to improve the wafer production quality and yield. Furthermore, the heating element 260 surrounding the channel of the Tesla valve 220 can heat the channel of the Tesla valve 220 during the maintenance phase of the anti-backflow device, causing the deposits on the inner wall of the channel of the Tesla valve 220 to decompose into gaseous products, or causing the deposits on the inner wall of the channel of the Tesla valve 220 to re-vaporize or sublimate into gaseous products. The gaseous products decomposed by heat can be introduced into the anti-backflow device 200 through the process gas supply line 100'. The reacting gases undergo a chemical reaction, and are then purged into the vacuum exhaust line 300' by the purging gas introduced into the reflux device 200 via the process gas supply line 100'. The gaseous products that are re-vaporized or sublimated by heating can be directly purged into the vacuum exhaust line 300' by the purging gas introduced into the reflux device 200 via the process gas supply line 100', thereby reducing the probability of the channel in the Tesla valve 220 being blocked, and thus helping to extend the service life of the Tesla valve 220.

[0110] Understandably, due to the simple structure of the Tesla valve 220, with no moving parts, there is no mechanical wear, and it does not require connection to an external drive power supply or a complex control system. Therefore, the Tesla valve 220 has good reliability and a low probability of failure. Consequently, its maintenance requirements and costs are also low, which also helps to reduce the probability of contaminants being introduced into the process gas supply line 100' due to maintenance of the Tesla valve 220.

[0111] It should be noted that the Tesla valve 220 has high flow resistance during backflow, which can easily lead to the deposition of byproducts on the inner wall of the Tesla valve channel.

[0112] In some embodiments, when the first end 211 of valve 210 is connected to process gas supply line 100', the anti-backflow device 200 further includes: a cooling component 270 surrounding the periphery of Tesla valve 220 and heating component 260, or surrounding the periphery of Tesla valve 220 and located between Tesla valve 220 and heating component 260.

[0113] The cooling component 270 is used to reduce the channel temperature of the Tesla valve 220 during the gas backflow stage if the backflow gas carries condensable contaminants. This causes the condensable contaminants in the backflow gas to condense and deposit on the inner wall of the channel of the Tesla valve 220, which helps to further reduce the probability of condensable contaminants backflowing into the process gas supply line 100', thereby improving the effect of further reducing the contamination of the process gas supply line 100'.

[0114] Among them, condensable pollutants refer to: solid reaction precursors, liquid reaction precursors, reaction byproducts such as siloxanes, halides, ammonium salts, etc.

[0115] It should be noted that when the anti-backflow device 200 includes a cooling component 270, the heating component 260 can also remove condensable substances deposited on the inner wall 228 of the channel of the Tesla valve 220 during the backflow stage.

[0116] In other embodiments, the piping system of the semiconductor device includes: a purge line; and an anti-backflow device according to any embodiment of the present invention, disposed on the purge line and sealed to the purge line. The anti-backflow device can reduce the probability of residual reactants flowing back into the purified line during the purge stage, improve purge efficiency, and also help reduce the probability of precursor cross-contamination.

[0117] For a detailed description of the anti-backflow device 200 in this embodiment, please refer to the corresponding descriptions in the foregoing embodiments, which will not be repeated here.

[0118] Accordingly, the present invention also provides a semiconductor device. Figure 6 This is a schematic diagram of the structure of a semiconductor device according to an embodiment of the present invention. Figure 7 This is a functional block diagram of another embodiment of the semiconductor device of the present invention. refer to Figure 6 and Figure 7 and in conjunction with references Figures 1 to 5 Semiconductor device 1 includes: a piping system 10 according to any embodiment of the present invention, or an anti-backflow device 200 according to any embodiment of the present invention.

[0119] in, Figure 6 The direction of the dashed arrow in the diagram indicates the flow direction of the process gas during the process venting stage. Figure 7 The direction of the middle arrow indicates the flow direction of process exhaust gas and by-products.

[0120] For a detailed description and advantages of the anti-backflow device 200 in this embodiment, please refer to the corresponding descriptions in the foregoing embodiments, which will not be repeated here.

[0121] In some embodiments, such as Figure 6As shown, the semiconductor device also includes: a process chamber 20, which is connected to one output end of the process gas supply line 100' of the piping system 10; and a vacuum pump 30, which is connected to the output end of the vacuum exhaust line 300' of the piping system 10.

[0122] Process chamber 20 is used to provide a basis for processing semiconductor structures.

[0123] The vacuum pump is used to evacuate the process chamber 20 and the piping system 10.

[0124] It is understandable that the process gas supply line 100' is used as the gas supply line, and the vacuum exhaust line 300' is used as the exhaust line.

[0125] The piping system 10 provides process gas to the process chamber 20 and allows direct connection to the vacuum pump 30, thereby providing an independent exhaust path for the semiconductor device.

[0126] The anti-backflow device 200 can also reduce the impact of "pump oil backflow" or "particulate matter rebound" generated inside the vacuum pump 30 on the process gas supply line 100'.

[0127] In other embodiments, such as Figure 7 As shown, the semiconductor device further includes: a process chamber; a sampling instrument; a sampling pipeline disposed between the exhaust end of the process chamber and the sampling instrument; an anti-backflow device according to any embodiment of the present invention, disposed on the sampling pipeline, wherein the positive input end of the anti-backflow device is connected to the sampling instrument through a sampling pipeline, and the positive output end of the anti-backflow device is connected to the exhaust end of the process chamber through another sampling pipeline; and a vacuum pump connected to the exhaust end of the process chamber and the input end of the sampling pipeline.

[0128] Sampling instruments are used to analyze process tail gases and byproducts. Specifically, sampling instruments include mass spectrometers, residual gas analyzers, etc.

[0129] Because the positive input end of the anti-backflow device is connected to the sampling instrument through a sampling pipeline, and the positive output end of the anti-backflow device is connected to the exhaust end of the process chamber through another sampling pipeline, the effective flow conductance of the gas flowing from the exhaust end of the process chamber to the analyzer is limited to a small range, thereby preventing the process exhaust gas and by-products discharged from the process chamber from contaminating the analyzer.

[0130] A vacuum pump directly connected to the exhaust end of the process chamber is used to discharge process exhaust gas and by-products after process treatment.

[0131] In other embodiments, the semiconductor device further includes: a purge line; and an anti-backflow device according to any embodiment of the present invention, disposed on the purge line and sealed to the purge line. The anti-backflow device can reduce the probability of residual reactants flowing back into the purified line during the purge stage, improve purge efficiency, and also help reduce the probability of precursor cross-contamination.

[0132] For a detailed description of the piping system 10 and the anti-backflow device 200 in this embodiment, please refer to the corresponding descriptions in the foregoing embodiments, and they will not be repeated here.

[0133] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A backflow prevention device for semiconductor equipment, characterized in that, For sealing connection of at least one of the gas supply line and the exhaust line, including: A valve having a first end and a second end; A Tesla valve having a channel, wherein the positive input end of the channel is sealed to the second end of the valve; Heating components surround the passage of the Tesla valve; Wherein, the positive output end of the channel and the first end of the valve satisfy at least one of the following conditions: The positive output end of the channel is used for a sealed connection with the exhaust pipe; The first end of the valve is used to connect to the gas supply pipeline.

2. The anti-backflow device as described in claim 1, characterized in that, When the first end of the valve is used to connect to the gas supply line, the anti-backflow device further includes: a cooling component surrounding the Tesla valve and the heating component, or surrounding the Tesla valve and located between the Tesla valve and the heating component.

3. The anti-backflow device as described in claim 2, characterized in that, The cooling component includes: a cooling pipe surrounding the Tesla valve, and a cooling medium flowing through the cooling pipe; The heating component includes a heating wire, a heating band, or a heating sleeve; When the heating element includes a heating wire, the heating wire is embedded in the side wall of the channel of the Tesla valve, and the cooling element surrounds the Tesla valve and the heating element. When the heating element includes a heating band or heating jacket, the cooling element surrounds the periphery of the Tesla valve, and the heating element covers the sidewall of the cooling element.

4. The anti-backflow device as described in claim 2 or 3, characterized in that, The roughness of the inner wall of the channel of the Tesla valve ranges from 0.15 micrometers to 0.8 micrometers.

5. The anti-backflow device as described in claim 2, characterized in that, The inner wall of the channel of the Tesla valve is covered by a coating, and the coating material includes porous materials, catalytic materials, hydrophobic materials or hydrophilic materials.

6. The anti-backflow device as described in claim 1, characterized in that, The Tesla valve is made of a corrosion-resistant material, or the inner wall of the channel of the Tesla valve is covered by a coating, and the coating is made of a corrosion-resistant material.

7. A method of using an anti-backflow device, characterized in that, include: Provide an anti-backflow device as described in any one of claims 1 to 6; During the maintenance phase of the anti-backflow device, the valve is closed and the heating component is brought to a first preset temperature so that the deposits on the inner wall of the channel of the Tesla valve can be decomposed into gaseous products by heat, or so that the deposits on the inner wall of the channel of the Tesla valve can be re-vaporized or sublimated into gaseous products by heat. After the heating element reaches the first preset temperature, the valve is opened and a purge gas is introduced into the anti-backflow device so that the purge gas blows the re-vaporized or sublimated gaseous products into the downstream pipeline. Alternatively, after the heating element reaches the first preset temperature, the valve is opened and a reaction gas and a purge gas are sequentially introduced into the anti-backflow device so that the gaseous products react chemically with the reaction gas and are then blown into the downstream pipeline by the purge gas. Alternatively, after the heating element reaches the first preset temperature, the gaseous products are removed by a vacuum pump connected to the anti-backflow device.

8. The method of using the anti-backflow device as described in claim 7, characterized in that, In the step of heating the heating element to a first preset temperature, the first preset temperature ranges from 80 degrees Celsius to 180 degrees Celsius.

9. The method of using the anti-backflow device as described in claim 7 or 8, characterized in that, In the step of providing the anti-backflow device, when the first end of the valve is used to connect to the gas supply line, the anti-backflow device further includes: a cooling component surrounding the periphery of the Tesla valve and the heating component, or surrounding the periphery of the Tesla valve and located between the Tesla valve and the heating component; In the gas backflow stage prior to the maintenance stage of the anti-backflow device, if the backflow gas includes condensable substances, the method of using the anti-backflow device further includes: bringing the cooling component to a second preset temperature so that the condensable substances condense and deposit on the channel surface of the Tesla valve, and then closing the valve.

10. A piping system for a semiconductor device, characterized in that, include: One or more process gas supply lines, an anti-backflow device corresponding to the process gas supply lines as described in any one of claims 1 to 6, and a vacuum exhaust line; The input end of the process gas supply pipeline is used to connect to the gas source that provides process gas, one output end of the process gas supply pipeline is used to be sealed to the process chamber, and the other output end is sealed to the valve of the anti-backflow device. The positive output end of the Tesla valve channel of the anti-backflow device is sealed to the input end of the vacuum exhaust pipe. The output end of the vacuum exhaust pipe is used to connect to a vacuum pump.

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