Method for manufacturing physical quantity detection device and physical quantity detection device

Abstract

A manufacturing method of a physical quantity detection device and a physical quantity detection device capable of reducing fluctuation in a detuning frequency. The physical quantity detection device includes a physical quantity detection element including a detection arm, a detection arm hammer portion, a drive arm, a drive arm hammer portion, and a base portion, and a support substrate that supports the base portion. The manufacturing method of the physical quantity detection device includes the following steps: in a state where the physical quantity detection element is mounted on the support substrate, balance adjustment of vibration of the physical quantity detection element is performed in the drive arm hammer portion; and after the balance adjustment, a detuning frequency of a drive frequency and a detection frequency of the physical quantity detection element is adjusted.

Description

Technical Field

[0001] This invention relates to a method for manufacturing a physical quantity detection device and the physical quantity detection device itself. Background Technology

[0002] Patent Document 1 discloses the following method: In the manufacturing process of a sensor device having a vibrating gyroscope element, after the detuning frequency adjustment process of adjusting the difference between the vibration frequencies of the detection arm and the drive arm, a cutting process of making the vibrating gyroscope element a single piece and a balance adjustment process of the drive arm are performed.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2012-172970

[0004] However, in the method of Patent Document 1, it is clearly known that there is a concern about increased fluctuations in the detuning frequency after the balancing adjustment process. Summary of the Invention

[0005] One aspect of this disclosure relates to a method for manufacturing a physical quantity detection device, the physical quantity detection device comprising: a physical quantity detection element having a plurality of detection arms, a detection arm hammer disposed on each detection arm, a plurality of drive arms, a drive arm hammer disposed on each drive arm, and a base; and a support base plate supporting the physical quantity detection element on the base, the method for manufacturing the physical quantity detection device comprising the following steps: balancing the vibration of the physical quantity detection element in the drive arm hammers while the physical quantity detection element is mounted on the support base plate; and after the balancing adjustment, adjusting the detuning frequency of the drive frequency and the detection frequency of the physical quantity detection element.

[0006] Furthermore, other embodiments of this invention relate to a physical quantity detection device, including: a physical quantity detection element having a plurality of detection arms, a detection arm hammer disposed on each detection arm, a plurality of drive arms, a drive arm hammer disposed on each drive arm, and a base; and a support substrate supporting the physical quantity detection element on the base, wherein the detection arm hammer includes: a first detection frequency adjustment region having a machining mark after being processed by a first detuning frequency adjustment performed before the physical quantity detection element is mounted on the support substrate; and a second detection frequency adjustment region having a machining mark after being processed by a second detuning frequency adjustment performed after the physical quantity detection element is mounted on the support substrate, wherein the drive arm hammer includes a balance adjustment region having a machining mark after being processed by the balance adjustment of the vibration of the physical quantity detection element. Attached Figure Description

[0007] Figure 1 This is a cross-sectional view showing an example of the configuration of a physical quantity detection device.

[0008] Figure 2 This is a diagram illustrating the operation of a physical quantity detection element.

[0009] Figure 3 This is an explanatory diagram of the detuning frequency and component sensitivity.

[0010] Figure 4 This is a top view illustrating the wafer of the physical quantity detection element.

[0011] Figure 5 This shows the measurement results of the detuning frequency fluctuation before adjustment in the wafer state.

[0012] Figure 6 This shows the measurement results of the fluctuation of the adjusted detuned frequency in the wafer state.

[0013] Figure 7 This shows the measurement results of the detuning frequency fluctuation after balance adjustment.

[0014] Figure 8 This is a flowchart illustrating the manufacturing method of a physical quantity detection device.

[0015] Figure 9 This is a flowchart illustrating a detailed example of a method for manufacturing a physical quantity detection device.

[0016] Figure 10 This is a top view showing the various regions of the drive hammer section of the drive arm.

[0017] Figure 11 This is a top view showing the various areas of the detection hammer section of the detection arm.

[0018] Figure 12 This shows the measurement results of the fluctuation after adjusting the detuned frequency based on the adjustment of the detection frequency.

[0019] Figure 13 This is a flowchart illustrating another detailed example of a method for manufacturing a physical quantity detection device.

[0020] Figure 14 This is a top view showing the various regions of the drive hammer section of the drive arm.

[0021] Figure 15 This shows the measurement results of the fluctuation after adjusting the detuning frequency based on the adjustment of the driving frequency.

[0022] Figure 16 This is an explanatory diagram regarding the adjustment of the detuning frequency based on the adjustment of the detection frequency.

[0023] Figure 17 This is an explanatory diagram regarding the adjustment of the detuning frequency based on the adjustment of the driving frequency.

[0024] Figure 18It is a side view illustrating the various areas of the drive hammer of the drive arm and the machining marks.

[0025] Figure 19 This is a side view illustrating the various areas of the inspection hammer section of the inspection arm and the machining marks.

[0026] Figure 20 This is a detailed example of the circuit device.

[0027] Figure 21 This is a detailed example of the circuit device.

[0028] Figure 22 These are other detailed examples of the configuration of a circuit device.

[0029] Figure 23 These are other detailed examples of the configuration of a circuit device.

[0030] Explanation of reference numerals in the attached figures

[0031] 1…Physical quantity detection device, 2…Base, 3…Cover, 4…Encapsulation, 5A, 5B…Connecting components, 6A, 6B, 7A, 7B…Internal terminals, 8A, 8B…External terminals, 9, 9A, 9B, 9C…Recesses, 10…Physical quantity detection elements, 11, 12, 12P, 12Q…Vibrating plates, 13, 14…Drive electrodes, 15, 15A, 15B, 16, 17, 17A, 1 7B…Detection electrode; 18, 18A, 18B, 18C, 18D…Drive arms; 19, 19A, 19B…Detection arms; 20…Circuit device; 21…Base; 22A, 22B…Connecting arms; 23, 24, 25, 26…Terminals; 28, 28A, 28B, 28C, 28D…Drive arm hammers; 29, 29A, 29B…Detection arm hammers; 30…Support substrate; 31… 32…bonding wire, 100…drive circuit, 102…amplifier circuit, 104…gain control circuit, 106…drive signal output circuit, 108…synchronization signal output circuit, 110…detection circuit, 120…amplifier circuit, 121, 122…Q / V conversion circuit, 124…differential amplifier circuit, 126…AC amplifier circuit, 130…synchronization detector circuit, 132…filter circuit, 134…A / D conversion circuit, 150…processing circuit, 160…switching circuit, 200…wafer, B1, B2…bonding components, BW…bonding wire, DG…feedback signal, DS…drive signal, DV…signal, S…acceptance space, S1, S2, S1A, S1B, S2A, S2B…detection signals, SW1~SW8…switching circuit, SYC…synchronization signal, VC…control voltage. Detailed Implementation

[0032] The following describes this embodiment. It should be noted that the embodiment described below is not intended to unduly limit the scope of the claims. Furthermore, not all components described in this embodiment are necessarily essential elements.

[0033] 1. Physical quantity detection device

[0034] Figure 1 This is a cross-sectional view showing an example of the configuration of the physical quantity detection device 1 according to this embodiment. Figure 1 As shown, the physical quantity detection device 1 of this embodiment includes a physical quantity detection element 10 and a support substrate 30 supporting the physical quantity detection element 10. Furthermore, the physical quantity detection device 1 may include a circuit device 20 for detecting physical quantities based on detection signals from the physical quantity detection element 10, a base 2 for mounting the support substrate 30, and a package 4 composed of a cover 3 and the base 2. It should be noted that the physical quantity detection device 1 is not limited to... Figure 1 The structure can be modified in various ways, such as omitting some of its constituent elements or adding other constituent elements. For example, it can also be modified by omitting the circuit device 20, the cover 3, etc. Furthermore, in... Figure 1 In this diagram, mutually orthogonal directions are designated as direction DR1 and direction DR2, and directions orthogonal to directions DR1 and DR2 are designated as direction DR3. Directions DR1, DR2, and DR3 are respectively the first direction, the second direction, and the third direction. Furthermore, the front end of the arrows in each direction of DR1, DR2, and DR3 is also called the positive side, and the opposite side is also called the negative side. Figure 1 This is a side view of the physical quantity detection device 1 as seen from the side in direction DR2.

[0035] The physical quantity detection element 10 is a component used to detect physical quantities; it can also be called a physical quantity transducer or a vibrating element. The physical quantity detection element 10, for example, has a vibrating plate, and the physical quantity is detected by the vibration of this vibrating plate. For example, if the physical quantity detection element 10 is a gyroscope sensor element, angular velocity is detected as a physical quantity. As a gyroscope sensor element, for example, there is a sensor element with a piezoelectric vibrating plate formed from a thin sheet of piezoelectric material such as crystal. Specifically, the gyroscope sensor element is a sensor element with a vibrating plate in the shape of a double T, tuning fork, or H, formed from a crystal substrate such as a Z-cut crystal. Alternatively, a MEMS (Micro Electro Mechanical Systems) type sensor element can also be used as a gyroscope sensor element. Furthermore, the physical quantity detected by the physical quantity detection element 10 can also be physical quantities other than angular velocity, such as angular acceleration, angle, acceleration, velocity, distance traveled, or pressure.

[0036] The support substrate 30 is the support portion of the physical quantity sensing element 10, for example, as described later. Figure 2 The base 21 of the physical quantity sensing element 10 supports the physical quantity sensing element 10. Figure 1 In the middle, the support substrate 30 has bonding leads 31 and 32, which support the physical quantity detection element 10. Figure 1 The diagram shows two bonding leads 31 and 32, but in reality, four bonding leads are provided to support the physical quantity detection element 10 from all four directions. The bonding leads 31 and 32 are support components and conductive components. Through these bonding leads 31 and 32, the terminals of each electrode of the physical quantity detection element 10 are electrically connected to the internal terminals 6A and 6B.

[0037] It should be noted that, Figure 1 The support substrate 30 is a support portion for a mounting method known as TAB (Tape Automated Bonding). However, the support substrate 30 can also be a relay substrate, where signal lines are routed on a substrate and signals are relayed. Furthermore, the connection in this embodiment is an electrical connection unless otherwise stated. An electrical connection is a connection that can transmit electrical signals, enabling the transmission of information based on electrical signals. An electrical connection can also be a connection via passive components, etc.

[0038] The package 4 has a base 2 and a cover 3. Specifically, the package 4 includes: a base 2 having an upwardly opening recess 9; and a cover 3 that engages with the upper surface of the base 2 in such a way as to form a receiving space S between the cover and the base 2. The base 2 and the cover 3 are engaged, for example, by engaging members 5A and 5B. For example, the base 2 can be made of ceramic such as alumina, and the cover 3 can be made of a metallic material such as Kovar alloy. However, the materials of the base 2 and the cover 3 are not limited to these.

[0039] Inside the package 4, a receiving space S is formed by the opening of the base 2, in which the physical quantity detection element 10, the support substrate 30, and the circuit device 20 are housed. The receiving space S, as the internal space, is airtight and is in a depressurized state, preferably closer to a vacuum. As a result, the viscous resistance is reduced, and the vibration characteristics of the physical quantity detection element 10 are improved. However, the atmosphere of the receiving space S is not particularly limited; for example, it can be atmospheric pressure or pressurized. Furthermore, the physical quantity detection device 1 of this embodiment only needs to have at least the base 2, and it can also be configured without the cover 3.

[0040] The recess 9 of the base 2 is composed of multiple recesses. For example, the recess 9 has a recess 9A that opens on the upper surface of the base 2, a recess 9B that opens on the bottom surface of the recess 9A and has a smaller opening width than the recess 9A, and a recess 9C that opens on the bottom surface of the recess 9B and has a smaller opening width than the recess 9B. In addition, the support substrate 30 is fixed to the bottom surface of the recess 9A in a state of supporting the physical quantity detection element 10. The bottom surface of the recess 9A is a stepped portion. Furthermore, a circuit device 20 is fixed on the bottom surface of the recess 9C.

[0041] In addition, such as Figure 1 As shown, in the housing space S, when viewed from above, the physical quantity detection element 10, the support substrate 30, and the circuit device 20 are arranged in an overlapping configuration. For example, the physical quantity detection element 10, the support substrate 30, and the circuit device 20 are arranged along direction DR3. Furthermore, the physical quantity detection element 10 is disposed on the first surface side of the support substrate 30, and the circuit device 20 is disposed on the back side, i.e., the second surface side, of the first surface of the support substrate 30.

[0042] It should be noted that the configuration of the physical quantity detection element 10, the support substrate 30, and the circuit device 20 is not limited to... Figure 1 The configuration. For example, in Figure 1 In this embodiment, a support substrate 30 is disposed between the physical quantity sensing element 10 and the circuit device 20; however, the physical quantity sensing element 10 may also be disposed between the support substrate 30 and the circuit device 20. Furthermore, in Figure 1 In the package 4, the physical quantity detection element 10, the support substrate 30, and the circuit device 20 are arranged sequentially from the top surface side. However, the circuit device 20, the support substrate 30, and the physical quantity detection element 10 can also be arranged in the order of the top surface side of the package 4.

[0043] In addition, such as Figure 1 As shown, multiple internal terminals 6A and 6B are arranged in a stepped portion on the bottom surface of the recess 9A of the base 2. Furthermore, multiple internal terminals 7A and 7B are also arranged in a stepped portion on the bottom surface of the recess 9B of the base 2. Additionally, multiple external terminals 8A and 8B are arranged on the lower surface of the base 2. The internal terminals 6A and 6B, internal terminals 7A and 7B, and external terminals 8A and 8B are electrically connected via internal wiring (not shown). Furthermore, the internal terminals 6A and 6B are electrically connected to the physical quantity sensing element 10 via conductive bonding members B1 and B2 and the support substrate 30. Furthermore, the internal terminals 7A and 7B are electrically connected to the circuit device 20 via bonding wire BW.

[0044] The conductive bonding components B1 and B2 are components that combine conductivity and bonding properties. There are no particular limitations on the conductive bonding components B1 and B2; however, conductive adhesives formed by dispersing conductive fillers such as silver fillers in various adhesives made of polyimide, epoxy, silicone, or acrylic, or various metal bumps such as gold bumps, silver bumps, copper bumps, or solder bumps, can be used.

[0045] Figure 2 This diagram illustrates an example of the operation of the physical quantity detection element 10. It should be noted that the following explanation primarily uses the case where the physical quantity detection element 10 is a gyroscope sensor element, specifically a double-T-shaped gyroscope sensor element. However, as mentioned above, the physical quantity detection element 10 can also be a gyroscope sensor element other than a double-T-shaped one, or a physical quantity detection element other than a gyroscope sensor element.

[0046] For example, when the Z-axis is set as the thickness direction of the physical quantity detection element 10, the physical quantity detection element 10, as a gyroscope sensor element, detects the angular velocity ω around the Z-axis. The X-axis and Y-axis are coordinate axes orthogonal to the Z-axis, and the X-axis and Y-axis are mutually orthogonal. For example, by using... Figure 2 The Z-axis along Figure 1 The physical quantity detection element 10 is configured in the direction DR3 so that it can detect the angular velocity ω along the axis of direction DR3 as the detection axis.

[0047] like Figure 2 As shown, the physical quantity detection device 1 includes a physical quantity detection element 10 and a circuit device 20. The circuit device 20 is, for example, an integrated circuit device called an IC (Integrated Circuit). For example, the circuit device 20 is an IC manufactured using semiconductor processes, which is a semiconductor chip on a semiconductor substrate on which circuit elements are formed. Furthermore, the circuit device 20 includes a driving circuit 100, a detection circuit 110, and a processing circuit 150. It should be noted that a modified embodiment may also be formed where these circuits are not part of the device.

[0048] The physical quantity detection element 10 includes drive arms 18A, 18B, 18C, and 18D, detection arms 19A and 19B, a base 21, and connecting arms 22A and 22B. Relative to the rectangular base 21, detection arms 19A and 19B extend in the +Y-axis direction and the -Y-axis direction, respectively. Furthermore, relative to the base 21, connecting arms 22A and 22B extend in the +X-axis direction and the -X-axis direction, respectively. Additionally, relative to the connecting arm 22A, drive arms 18A and 18B extend from their front ends in the +Y-axis direction and the -Y-axis direction, respectively; and relative to the connecting arm 22B, drive arms 18C and 18D extend from their front ends in the +Y-axis direction and the -Y-axis direction, respectively.

[0049] Furthermore, the physical quantity detection element 10 has drive arm hammers 28A, 28B, 28C, and 28D, and detection arm hammers 29A and 29B. These hammers are also referred to as mass adjustment parts or hammer heads. Drive arm hammers 28A and 28B are respectively disposed on the front end sides of drive arms 18A and 18B, and drive arm hammers 28C and 28D are respectively disposed on the front end sides of drive arms 18C and 18D. Detection arm hammers 29A and 29B are respectively disposed on the front end sides of detection arms 19A and 19B. Additionally, the drive arm hammers 28A, 28B, 28C, and 28D disposed on drive arms 18A, 18B, 18C, and 18D are balance adjustment parts, for example, used for balancing the vibration of the physical quantity detection element 10. Balance adjustment is the adjustment of vibration balance. For example, during the manufacture of the physical quantity detection device 1, the vibration of the physical quantity detection element 10 is balanced by performing a finishing process using a laser to cut the metal of the drive arm hammers 28A, 28B, 28C, and 28D. Furthermore, the detection arm hammers 29A and 29B are used for adjusting the detuning frequency of the drive frequency and detection frequency of the physical quantity detection element 10. For example, during the manufacture of the physical quantity detection device 1, the detection frequency is adjusted by performing a finishing process using a laser to cut the metal of the detection arm hammers 29A and 29B, thereby adjusting the detuning frequency. Alternatively, the drive frequency can be adjusted by performing a finishing process using a laser to cut the metal of the drive arm hammers 28A, 28B, 28C, and 28D, thereby adjusting the detuning frequency.

[0050] The vibrating plate of the physical quantity sensing element 10 can be formed from piezoelectric materials such as crystal, lithium tantalate, or lithium niobate. Among these, crystal is preferably used as the constituent material of the vibrating plate. The X-axis, Y-axis, and Z-axis are also referred to as the electrical axis, mechanical axis, and optical axis of the crystal substrate, respectively. The crystal substrate is composed of a plate-shaped Z-cut crystal plate or the like, which has a thickness in the Z-axis direction.

[0051] Drive electrodes 13 are formed on the upper and lower surfaces of drive arms 18A and 18B, and drive electrodes 14 are formed on the right and left sides of drive arms 18A and 18B. Similarly, drive electrodes 14 are formed on the upper and lower surfaces of drive arms 18C and 18D, and drive electrodes 13 are formed on the right and left sides of drive arms 18C and 18D. Furthermore, a drive signal DS from the drive circuit 100 is supplied to the drive electrodes 13, and a feedback signal DG from the drive electrodes 14 is input to the drive circuit 100.

[0052] Detection electrodes 15 are formed on the upper and lower surfaces of detection arm 19A, and detection electrodes 17 are formed on the right and left sides of detection arm 19A. Detection electrodes 16 are formed on the upper and lower surfaces of detection arm 19B, and detection electrodes 17 are formed on the right and left sides of detection arm 19B. Detection electrode 17 is, for example, a grounding electrode, grounded to the ground. Furthermore, detection signals S1 and S2 from detection electrodes 15 and 16 are input to detection circuit 110.

[0053] It should be noted that grooves (not shown) are provided on the upper and lower surfaces of the drive arms 18A, 18B, 18C, 18D and the detection arms 19A, 19B to enhance the electric field effect between the electrodes. By providing these grooves, a larger amount of charge can be generated with a smaller strain. Furthermore, the upper surface is the +Z-axis side (positive Z-axis side), and the lower surface is the -Z-axis side (negative Z-axis side). The right side is the +X-axis side (positive X-axis side), and the left side is the -X-axis side (negative X-axis side).

[0054] The base 21 is provided with driving terminals 23 and 24 and detection terminals 25 and 26. A driving signal DS from the driving circuit 100 is input to the driving terminal 23, and a feedback signal DG for the driving circuit 100 is output from the driving terminal 24. A detection signal S1 for the detection circuit 110 is output from the detection terminal 25, and a detection signal S2 for the detection circuit 110 is output from the detection terminal 26.

[0055] The circuit device 20 includes a drive circuit 100 that drives the physical quantity detection element 10. The drive circuit 100 drives the vibrating plate of the physical quantity detection element 10 to vibrate by outputting a drive signal DS to the physical quantity detection element 10. The drive signal DS is, for example, a rectangular wave signal, but it can also be a sine wave signal.

[0056] The detection circuit 110 detects physical quantities based on detection signals S1 and S2 from the physical quantity detection element 10. Figure 2 In this process, angular velocity is detected as a physical quantity. Detection signals S1 and S2 are, for example, detection signals of a physical quantity that use the driving frequency of the driving signal DS as the transmission frequency. Detection circuit 110 detects the physical quantity (angular velocity) in detection signals S1 and S2 by synchronously detecting the signals based on detection signals S1 and S2 using a synchronization signal, and outputs detection data.

[0057] The processing circuit 150 is a circuit that performs digital signal processing and other processing on the detection data from the detection circuit 110. The processing circuit 150 performs digital signal processing on the detection data from the detection circuit 110, including digital filtering. Furthermore, the detection data after digital filtering by the processing circuit 150 is output, for example, as the final detected value of the physical quantity. It should be noted that the signal processing performed by the processing circuit 150 is not limited to digital filtering; for example, it can perform various signal processing such as temperature compensation processing and various correction processing. In addition, the detection circuit 110 may output an analog detection voltage instead of digital detection data.

[0058] Next, the detailed operation of the physical quantity detection element 10 when it is a gyroscope sensor element will be explained. When a drive signal DS is applied to the drive electrode 13 through the drive circuit 100, the drive arms 18A, 18B, 18C, and 18D operate through the inverse piezoelectric effect. Figure 2 The bending vibration is as shown by arrow C1. For example, the vibration postures shown by the solid arrow and the dashed arrow are repeatedly performed at a specified frequency. That is, the front ends of drive arms 18A and 18C repeatedly approach and separate from each other, and the front ends of drive arms 18B and 18D also repeatedly approach and separate from each other in a bending vibration. At this time, drive arms 18A and 18B and drive arms 18C and 18D vibrate linearly symmetrically with respect to the X-axis passing through the center of gravity of base 21. Therefore, base 21, connecting arms 22A and 22B, and detection arms 19A and 19B hardly vibrate.

[0059] In this state, if an angular velocity with the Z-axis as the rotation axis is applied to the physical quantity detection element 10, the arms 18A, 18B, 18C, and 18D will vibrate as indicated by arrow C2 due to the Coriolis force. That is, the Coriolis force in the direction of arrow C1 and the direction of arrow C2, which is orthogonal to the Z-axis, acts on the driving arms 18A, 18B, 18C, and 18D, thereby generating a vibration component in the direction of arrow C2. This vibration of arrow C2 is transmitted to the base 21 via connecting arms 22A and 22B, thereby causing the detection arms 19A and 19B to bend in the direction of arrow C3. The charge signal generated by the piezoelectric effect caused by the bending vibration of the detection arms 19A and 19B is input to the detection circuit 110 as detection signals S1 and S2 to detect the angular velocity about the Z-axis.

[0060] For example, when the angular velocity of the physical quantity sensing element 10 around the Z-axis is set to ω, the mass is set to m, and the vibration velocity is set to v, the Coriolis force is expressed as Fc = 2m. v ω. Therefore, the detection circuit 110 can determine the angular velocity ω about the Z-axis by detecting the desired signal, which is a signal corresponding to the Coriolis force.

[0061] It should be noted that, hereinafter, drive arms 18A, 18B, 18C, and 18D will be collectively referred to as drive arm 18, and detection arms 19A and 19B will be collectively referred to as detection arm 19. Furthermore, drive arm hammers 28A, 28B, 28C, and 28D will be collectively referred to as drive arm hammer 28, and detection arm hammers 29A and 29B will be collectively referred to as detection arm hammer 29.

[0062] 2. Adjustment of detuned frequency

[0063] Figure 3 This is an explanatory diagram about detuning frequency and component sensitivity. Figure 3 D1 illustrates the frequency characteristics of the signal output to, for example, the detection electrode 15 of the detection arm 19 when the drive signal DS is input to the drive electrode 13 of the drive arm 18. Furthermore, Figure 3 D2 is a graph showing the relationship between the detuning frequency and the component sensitivity.

[0064] The detuning frequency corresponds to the difference between the driving frequency and the detection frequency. When the detuning frequency is set to Δf, the driving frequency to fd, and the detection frequency to fs, it can be expressed as, for example, Δf = |fd - fs|. Figure 3 As shown, when fd < fs, it is expressed as Δf = fs - fd. Here, the driving frequency is the resonant frequency of the driving side, for example, corresponding to the resonant frequency of the driving arm 18. Furthermore, the detection frequency is the resonant frequency of the detection side, for example, corresponding to the resonant frequency of the detection arm 19.

[0065] The element sensitivity is the inherent sensitivity of the physical quantity detection element 10, for example, it corresponds to the amount of charge generated in the physical quantity detection element 10 when an angular velocity is applied. The detuning frequency and the element sensitivity are inversely proportional; the smaller the detuning frequency, the higher the element sensitivity and the greater the amount of charge generated.

[0066] For example in Figure 3 In D2, the horizontal axis represents the detuning frequency, and the vertical axis represents the amplification of the component sensitivity based on the detuning frequency. For example, if the detuning frequency at which the component sensitivity amplification is 0% is set to 800Hz, then at a detuning frequency of 400Hz, the component sensitivity increases by, for example, 100%, effectively doubling. Furthermore, according to... Figure 3It is clear from the characteristics of the detuning frequency and element sensitivity of D3 that: if the detuning frequency decreases, the element sensitivity increases; however, the fluctuation of the element sensitivity also increases. That is, if the detuning frequency decreases, the element sensitivity increases, but the slope of the characteristic shown by D3 also increases, therefore, the fluctuation of the element sensitivity relative to the fluctuation of the detuning frequency also increases. Therefore, it is desirable to set the detuning frequency as small as possible within the allowable range of element sensitivity fluctuation to achieve high sensitivity of the physical quantity detection element 10.

[0067] Furthermore, up to this point, the adjustment of the detuned frequency has only been... Figure 4 The physical quantity detection element 10 shown is implemented in the state of the wafer 200. For example... Figure 4 As shown, for each physical quantity detection element 10 formed on the wafer 200, the driving frequency and detection frequency are measured by the probe of a tester. Furthermore, the metal (electrodes) of the detection arm hammer 29 and the driving arm hammer 28 are trimmed by laser cutting to adjust the detection frequency and driving frequency, thereby adjusting the detuned frequency to a desired set frequency, such as 800Hz. For example, by using laser energy, the metal of the detection arm hammer 29 and the driving arm hammer 28 is melted or evaporated, thereby detecting the mass change of the arm 19 and the driving arm 18, and adjusting the detuned frequency corresponding to the difference between the driving frequency and the detection frequency.

[0068] After adjusting the detuning frequency in this wafer state, the wafer 200 is cut, and the physical quantity sensing element 10 is bent to monolithize the physical quantity sensing element 10. Then, for example, the monolithized physical quantity sensing element 10 is bonded to [a specific component / structure] by gang bonding. Figure 1 The support substrate 30 is described in the text. In addition, the support substrate 30, to which the physical quantity sensing element 10 is attached, is mounted, for example, on the base 2 of the package 4 on which the circuit device 20 is mounted by chip mounting.

[0069] Next, balance adjustment is performed with the physical quantity detection element 10 mounted on the support substrate 30. For example, the vibration of the physical quantity detection element 10 is balanced in a way that the vibration of the drive arm 18 will not cause unnecessary vibration of the detection arm 19, thus minimizing vibration leakage. For example, unnecessary signals generated in the detection signal due to unnecessary vibration of the detection arm 19 are measured, and the metal of the drive arm hammer 28 is cut by laser to avoid generating unnecessary signals, thereby performing balance adjustment. After balance adjustment, for example, the cover 3 is joined to the base 2 and sealed, thus completing the physical quantity detection device 1.

[0070] However, in previous manufacturing methods, only Figure 4When adjusting the detuning frequency in the wafer state shown, the detuning frequency changes during the aforementioned balance adjustment and monolithicization of the physical quantity detection element 10, resulting in increased detuning frequency fluctuations. Thus, when the detuning frequency fluctuations increase, according to... Figure 3 As clearly seen from D2 and D3, the fluctuation of the sensitivity of the physical quantity detection element 10 also increases. Consequently, a large number of bits are required for the sensitivity adjustment data used in the circuit device 20, leading to an increase in the circuit area of ​​the circuit device 20 due to the increased memory capacity needed to store the sensitivity adjustment data. Furthermore, when the fluctuation of the detuning frequency increases, it becomes necessary to set a wider frequency band to avoid when designing the resonant frequency of the mounting substrate, which also results in a loss of design freedom for the substrate.

[0071] For example, Figure 5 yes Figure 2 The measurement results of the detuning frequency before adjustment in the wafer state shown. Figure 5 This is a histogram; the vertical axis represents the detuning frequency, and the horizontal axis represents the number of samples measured for each detuning frequency. (More details will follow later.) Figure 6 , Figure 7 , Figure 12 , Figure 15 The same applies to China. For example... Figure 5 As shown, before the detuning frequency is adjusted in the chip state, for example, in the range of about 1kHz to about 200Hz, the detuning frequency fluctuates greatly.

[0072] Figure 6 This is the measurement result of the detuning frequency after adjustment in the wafer state. Thus, after adjustment of the detuning frequency in the wafer state, the fluctuation range of the detuning frequency is, for example, around 900Hz to around 800Hz. Figure 5 In comparison, the fluctuation of the detuned frequency is smaller.

[0073] Figure 7 This is the measurement result of the detuned frequency after balance adjustment. For example... Figure 7 As shown, if balance adjustment is performed, with Figure 6 Compared to before the balance adjustment, the fluctuation of the detuning frequency becomes larger. Furthermore, if the fluctuation of the detuning frequency increases, the fluctuation of the component sensitivity also increases, leading to problems such as the large-scale deployment of the circuit device 20.

[0074] Therefore, in the manufacturing method of the physical quantity detection device 1 of this embodiment, after the balance adjustment step in which the physical quantity detection element 10 is mounted on the support substrate, a step is performed to adjust the detuning frequency of the driving frequency and the detection frequency of the physical quantity detection element 10. For example, in addition to... Figure 4In addition to adjusting the detuning frequency in the wafer state as described in the text, the detuning frequency is also adjusted in the state where the physical quantity detection element 10 is mounted on the support substrate.

[0075] Figure 8 This is a flowchart illustrating the manufacturing method of this embodiment. First, the physical quantity detection element 10 is mounted on the support substrate 30 and installed on the package 4 (step S11). For example, the physical quantity detection element 10, after being monolithized from a wafer, is mounted on the support substrate 30 by means of group bonding or the like, and the support substrate 30 with the physical quantity detection element 10 mounted is installed on the base 2 of the package 4. It should be noted that modified embodiments, such as mounting the support substrate 30 on the base 2 of the package 4 and mounting the physical quantity detection element 10 on the support substrate 30, are also possible, where the support substrate 30 is mounted on the base 2.

[0076] Next, the vibration balance of the physical quantity detection element 10 is adjusted (step S12). For example, in the physical quantity detection device 1, due to manufacturing process deviations, etc., in the initial state, Figure 2 The vibration imbalance of the drive arms 18A-18D causes unnecessary vibrations in the detection arms 19A and 19B when driven by the physical quantity detection element 10. That is, ideally, when the drive arms 18A-18D vibrate, without generating angular velocity, the detection arms 19A and 19B should not vibrate. However, before balance adjustment, vibrations occur due to manufacturing process deviations, etc. Therefore, during balance adjustment, unnecessary signals generated by the detection signals due to unnecessary vibrations are measured, and the metal film on the drive arm hammers 28A-28D of the drive arms 18A-18D is trimmed and the frequency is adjusted using energy lines such as lasers, thereby reducing unnecessary vibrations. For example, during balance adjustment, unnecessary signals generated from the two detection arms 19A and 19B are measured individually for each detection arm, and the processing amount of the drive arm to be processed is calculated based on the measured values. Furthermore, based on the calculated processing amount, the metal film removal processing of the corresponding drive arm hammer is performed.

[0077] Next, the detuning frequency of the driving frequency and the detection frequency of the physical quantity detection element 10 is adjusted (step S13). That is, after the balance adjustment in step S12, for example, with the physical quantity detection element 10 mounted on the support substrate 30, the detuning frequency of the physical quantity detection element 10 is adjusted. For example, the resonant frequency of the driving arm 18 of the physical quantity detection element 10, i.e., the driving frequency, and the resonant frequency of the detection arm 19, i.e., the detection frequency, are measured. For example, as described later. Figures 20-23As explained, this measurement is performed using, for example, a measurement circuit, namely a switching circuit 160, provided in the circuit device 20. For example, the switching circuit 160 drives the drive arm 18 via a drive signal to measure the drive frequency, and the switching circuit 160 drives the detection arm 19 via a drive signal to measure the detection frequency. Furthermore, based on the measurement results of the drive frequency and the detection frequency, a processing amount is determined. Based on the determined processing amount, processing is performed, for example, to change the mass of the detection arm hammer 29, thereby adjusting the detuned frequency to the desired set frequency. Alternatively, processing can be performed, for example, to change the mass of the drive arm hammer 28, based on the determined processing amount, thereby adjusting the detuned frequency to the desired set frequency.

[0078] As mentioned earlier, the processing of the detection arm hammer 29 and the drive arm hammer 28 in this case can be achieved by removing the metal (metal film) from the detection arm hammer 29 and the drive arm hammer 28 using energy lines such as lasers. However, this is not a limitation, and various modifications can be implemented. For example, the processing of the detection arm hammer 29 and the drive arm hammer 28 is not limited to using lasers, and the material removed by processing is not limited to metals such as gold. For example, processing can also be performed using energy lines other than lasers, such as irradiation with ion beams. Furthermore, processing can also be performed by forming film electrode components in each region of the detection arm hammer 29 and the drive arm hammer 28 through methods such as evaporation or sputtering.

[0079] Figure 9 This is a flowchart illustrating a detailed example of the manufacturing method of this embodiment. First, in the wafer state, the detuning frequency of the driving frequency and the detection frequency of the physical quantity detection element 10 is adjusted (step S21). That is, as... Figure 4 As shown, for example, the probe of the tester is brought into contact with the electrode terminals of each physical quantity detection element 10 formed on the wafer 200 to measure the driving frequency and the detection frequency. Furthermore, the detection arm hammer 29 and the driving arm hammer 28 are trimmed to adjust the detection frequency and the driving frequency, thereby adjusting the detuning frequency, for example, to a desired set frequency such as 800Hz. It should be noted that the set frequency of the detuning frequency is not limited to 800Hz; for example, it can be greater than 800Hz or less than 800Hz. For example, by using the method of this embodiment, the fluctuation of the detuning frequency is reduced; therefore, it is preferable to flexibly apply this method to make the set frequency of the detuning frequency a smaller frequency such as 400Hz.

[0080] Next, the physical quantity sensing element 10 is mounted on the support substrate 30 and installed in the package 4 (step S22). For example, from... Figure 4 The physical quantity detection element 10 after the chip 200 is monolithically processed is mounted on the support substrate 30, and the support substrate 30 on which the physical quantity detection element 10 is mounted is mounted on the base 2 of the package 4.

[0081] Next, in the balance adjustment area of ​​the drive arm hammer 28, the vibration balance adjustment of the physical quantity detection element 10 is performed (step S23). For example Figure 10 This is a top view showing the various regions of the drive arm hammer 28 of the drive arm 18. Figure 10 Is Figure 2 A rough top view taken when viewed from above along the Z-axis. For example... Figure 10 As shown, the drive arm hammer section 28 is provided with, for example, a drive frequency adjustment area, a balance adjustment area, a rebalancing adjustment area, and a fine-tuning balance adjustment area in the wafer state. (As described later...) Figure 18 As shown, these regions are, for example, areas of metal films of a specified thickness formed by metals such as gold (Au) and chromium (Cu).

[0082] like Figure 4 As shown, Figure 10 The drive frequency adjustment area in the wafer state is an area used to adjust the drive frequency when the physical quantity detection element 10 is disposed on the wafer 200. By performing a process such as using a laser to trim the metal in the drive frequency adjustment area of ​​the drive arm hammer 28 of the physical quantity detection element 10 disposed on the wafer 200, the drive frequency of the drive arm 18 is changed, and the detuning frequency is adjusted.

[0083] in addition, Figure 10 The balance adjustment zone is used to adjust the balance of the vibration of the physical quantity detection element 10. Figure 9 In step S23, during the balance adjustment, a process is performed to remove the metal from the balance adjustment area using a laser or similar device. Specifically, in Figure 2 In the process, when the drive arms 18A-18D vibrate using the drive signal DS, ideally, if no angular velocity is generated, the detection arms 19A and 19B will not vibrate, and no unnecessary signals will be generated in the detection signals S1 and S2. However, if the vibration balance of the drive arms 18A-18D is disrupted, unnecessary signals will be generated in the detection signals S1 and S2. Therefore, in Figure 9 In step S23, during the balance adjustment, detection signals S1 and S2 are monitored. To adjust the vibration balance, the drive arm hammers 28A-28D of the drive arms 18A-18D are trimmed so that unnecessary signals in S1 and S2 are brought close to zero. This changes the mass of the drive arm hammers 28A-28D. Figure 10The balance adjustment region is, for example, the region where coarse balance adjustment is performed. In coarse balance adjustment, the balance is adjusted such that the level (proportion) of the unwanted signal is below the reference value for coarse adjustment. The reference value for coarse adjustment is, for example, tens of thousands of ppm to thousands of ppm; as an example, it is around 10,000 ppm. ppm corresponds to the ratio of the detection charge (detection voltage) of the detection signal from detection arms 19A and 19B to the drive charge (drive voltage) based on the drive signal.

[0084] Next, in the detection frequency adjustment area of ​​the detection arm hammer 29, the detuning frequency is adjusted by adjusting the detection frequency (step S24). For example... Figure 11 This is a top view showing the various regions of the detection arm hammer 29 of the detection arm 19. Figure 11 Is Figure 2 A rough top view taken when viewed from above along the Z-axis. For example... Figure 11 As shown, the detection arm hammer section 29 includes a region for adjusting the detection frequency, for example, when the device is in a wafer state, and a region for adjusting the detection frequency when the physical quantity detection element 10 is mounted on the support substrate 30. (As described later...) Figure 19 As shown, these regions are, for example, regions of metal films of a specified thickness formed from metals such as gold and chromium.

[0085] like Figure 4 As shown, Figure 11 The detection frequency adjustment region in the wafer state is an area used for adjusting the detection frequency when the physical quantity detection element 10 is disposed on the wafer 200. For example, in the detection arm hammer 29 of the physical quantity detection element 10 disposed on the wafer 200, by performing a process such as using a laser to trim the metal in the detection frequency adjustment region in the wafer state, the detection frequency of the detection arm 19 changes, and the detuning frequency is adjusted. It should be noted that, as Figure 10 As shown, the drive arm hammer 28 is provided with a drive frequency adjustment area for adjusting the detuning frequency in the wafer state. However, the adjustment of the detuning frequency in the wafer state is mainly performed in the detection frequency adjustment area of ​​the detection arm hammer 29.

[0086] on the other hand, Figure 11 The detection frequency adjustment area is an area for adjusting the detection frequency when the physical quantity detection element 10 is mounted on the support substrate 30. For example, when the physical quantity detection element 10 is mounted on... Figure 1 In the state of the base 2 of the package 4, by using laser or other means to... Figure 10 The metal in the detection frequency adjustment area of ​​the detection arm hammer 29 is processed to change the detection frequency of the detection arm 19, thereby adjusting the detuned frequency.

[0087] Next, in Figure 10 In the rebalancing adjustment area of ​​the drive arm hammer 28 shown, the vibration of the physical quantity detection element 10 is rebalanced (step S26). For example... Figure 10 As shown, in the drive arm hammer section 28, in addition to the balance adjustment area, a rebalancing adjustment area is also provided. Furthermore, during rebalancing adjustment, detection signals S1 and S2 are monitored, and the drive arm hammer sections 28A-28D of the drive arms 18A-18D are trimmed to prevent unnecessary signals from approaching zero again, thereby readjusting the vibration balance. For example, by... Figure 9 In step S23, the vibration balance of the physical quantity detection element 10 is adjusted. Ideally, the vibration balance can be assumed not to be disrupted by the machining adjustment of the detection arm hammer 29 of the detection arm 19 in step S24. However, in reality, it is envisioned that the vibration balance will be disrupted by the machining adjustment of the detection arm hammer 29. Therefore, in step S26, the vibration of the physical quantity detection element 10 is rebalanced.

[0088] Next, in Figure 10 In the fine-tuning balance adjustment area of ​​the drive arm hammer 28 shown, the physical quantity detection element 10 performs fine-tuning balance adjustment. For example... Figure 10 As shown, in the drive arm hammer section 28, in addition to the coarse balance adjustment area, a fine balance adjustment area is also provided. Furthermore, in the fine balance adjustment, detection signals S1 and S2 are monitored, and the drive arm hammer sections 28A-28D of the drive arms 18A-18D are trimmed to bring the unwanted signals closer to zero, thereby performing fine adjustments to the vibration balance. In the fine balance adjustment, the balance adjustment is performed with the unwanted signal level (proportion) below the reference value for fine adjustment. The reference value for fine adjustment is smaller than the reference value for coarse adjustment, for example, several hundred ppm to tens of ppm; as an example, it is around 200 ppm.

[0089] Figure 12 It means Figure 9 The measurement results of the fluctuation of the detuned frequency after adjustment caused by the adjustment of the detection frequency in step S24. For example, in Figure 9 In step S21, the detuning frequency in the wafer state is adjusted to match... Figure 5 Compared to the fluctuations before adjustment, as shown Figure 6 As shown, the fluctuation of the detuned frequency decreases. However, afterwards, when... Figure 9 During the balance adjustment in step S23, such as Figure 7 As shown, compared to Figure 6 The fluctuation of the detuned frequency becomes larger.

[0090] Regarding this point, in this embodiment, Figure 9 After the balance adjustment in step S23, as shown in step S24, the detuning frequency is adjusted with the physical quantity detection element 10 installed. By adjusting the detuning frequency in this way, as... Figure 12 As shown, with Figure 7 Compared to immediately after the balance adjustment shown, the fluctuation of the detuning frequency can be significantly reduced. For example, in the adjustment of the detuning frequency in step S24, the mass of the arm hammer 29 is reduced by detecting the finishing process, thus... Figure 3 The detection frequency increases, thus becoming an adjustment that increases the detuning frequency. Furthermore, here, the target frequency for adjusting the detuning frequency is set, for example, to 800Hz. Therefore, regarding... Figure 7 In step S24, the physical quantity detection element 10, whose detuning frequency is less than 800Hz, is adjusted so that the detuning frequency is, for example, around 800Hz. Thus, as... Figure 12 As shown, adjustments are made to achieve a detuned frequency distribution above 800Hz, thereby harmonizing with... Figure 7 In comparison, this can reduce the fluctuation of detuned frequencies.

[0091] Figure 13 This is a flowchart illustrating another detailed example of the manufacturing method of the physical quantity detection device 1. Figure 13 and Figure 9 The difference is: in Figure 13 In, relative to Figure 9 Further adjustments were made to the detuning frequency based on the adjustment of the driving frequency in step S25.

[0092] That is, in Figure 13 For example, after the balance adjustment in step S23, the detuning frequency is adjusted by adjusting the drive frequency in the drive frequency adjustment area of ​​the drive arm hammer 28 (step S25). Figure 14 This is a top view showing various regions of the drive arm hammer 28 of the drive arm 18. Figure 14 In addition to Figure 10 In addition to the various areas of the drive arm hammer 28, a drive frequency adjustment area is also provided. For example... Figure 18 As shown, the drive frequency adjustment region is, for example, a region of a metal film of a specified thickness formed from metals such as gold or chromium. This drive frequency adjustment region is used to adjust the drive frequency when the physical quantity sensing element 10 is mounted on the support substrate 30. For example, when the physical quantity sensing element 10 is mounted on... Figure 1 In the state of the base 2 of the package 4, by using laser or other means to... Figure 18 The metal in the drive frequency adjustment area of ​​the drive arm hammer 28 is processed to change the drive frequency of the drive arm 18 and adjust the detuned frequency.

[0093] Figure 15 It shows based on Figure 13 The measurement results of the fluctuation of the detuned frequency after adjusting the driving frequency in step S25. Figure 15 As shown, the detuning frequency is adjusted by performing an adjustment based on the driving frequency, compared to adjusting the detuning frequency only based on the detection frequency. Figure 12 Compared to the previous situation, this can further reduce the fluctuation of the detuning frequency.

[0094] For example Figure 13 The adjustment of the detuned frequency in step S25 is as follows: the mass of the drive arm hammer 28 is reduced by the finishing process, and the... Figure 3 The driving frequency increases, thus reducing the detuning frequency. Additionally, regarding... Figure 12 For physical quantity detection elements 10 with detuned frequencies, such as those greater than approximately 800 Hz, Figure 13 In step S25, adjustments are made to increase the driving frequency and decrease the detuning frequency. Thus, as... Figure 15 As shown, adjustments are made to distribute the detuning frequency fluctuations within a range around 800Hz, in accordance with... Figure 12 In comparison, this can further reduce the fluctuation of the detuning frequency.

[0095] For example Figure 16 This is an explanatory diagram of detuning frequency adjustment based on the adjustment of the detection frequency. In Figure 16 During the adjustment, by trimming the hammer portion 29 of the detection arm 19, the mass of the hammer portion 29 is reduced, and the detection frequency increases. Therefore, adjustments can be made to increase the detuning frequency. Furthermore, Figure 17 This is an explanatory diagram of detuning frequency adjustment based on driving frequency adjustment. In Figure 17 During the adjustment, by performing finishing work on the drive arm hammer 28 of the drive arm 18, the mass of the drive arm hammer 28 is reduced, and the drive frequency increases. Therefore, an adjustment can be made to reduce the detuning frequency. Thus, by performing... Figure 16 , Figure 17 Adjustments by both sides, such as Figure 15 As shown, the fluctuation of the detuning frequency can be adjusted to a distribution within a range around a set frequency such as 800Hz. It should be noted that in this embodiment, even with the physical quantity detection element 10 mounted on the support substrate 30, this can also be performed. Figure 16 Adjustment of detuned frequency based on detection frequency and Figure 17 Both sides of the detuning frequency adjustment based on the driving frequency can be performed, or only one of these adjustments can be performed.

[0096] Figure 18This is a side view showing various regions of the drive arm hammer 28 of the drive arm 18. Figure 19 This is a side view showing various regions of the detection arm hammer 29 of the detection arm 19. (See attached image.) Figure 18 , Figure 19 As shown, a metal film of a specified thickness is formed on the drive arm hammer 28 and the detection arm hammer 29.

[0097] In addition, such as Figure 18 As shown, in the wafer state, the film thickness increases in the drive frequency adjustment region, balance adjustment region, drive frequency adjustment region, and rebalance adjustment region. For example, a 1.5 μm thick gold layer is formed on top of a 200 Å thick chromium layer and a 500 Å thick gold layer. On the other hand, the film thickness decreases in the fine-tuning balance adjustment region. For example, a 200 Å thick chromium layer and a 500 Å thick gold layer are formed.

[0098] In addition, such as Figure 19 As shown, the film thickness is thicker in the detection frequency adjustment region in the wafer state and in the ordinary detection frequency adjustment region. For example, a 1.5 μm thick gold layer is formed on top of a 200 Å thick chromium layer and a 500 Å thick gold layer.

[0099] Additionally, if Figure 9 , Figure 13 The detuning frequency is adjusted in the wafer state as shown in step S21. Figure 18 The machining marks shown in A1, after being trimmed and removed, are formed in the drive frequency adjustment area of ​​the wafer. Figure 19 The processing marks shown in B1 are formed in the detection frequency adjustment area of ​​the wafer state after being trimmed and removed.

[0100] In addition, if Figure 8 Step S12 Figure 9 , Figure 13 The balance adjustment shown in step S23 then Figure 18 The machining marks shown in A2 are formed in the balance adjustment area after the part has been trimmed and removed.

[0101] Furthermore, if based on Figure 8 Step S13 Figure 9 , Figure 13 The adjustment of the detuned frequency by adjusting the detection frequency as shown in step S24, then Figure 19 The machining marks, which were removed after the portion shown in B2 was trimmed, are formed in the detection frequency adjustment area.

[0102] Furthermore, if based on Figure 13 The adjustment of the detuning frequency by adjusting the driving frequency as shown in step S25, then Figure 18The machining marks shown in A3 are formed in the drive frequency adjustment area after the part has been trimmed and removed.

[0103] In addition, if Figure 9 , Figure 13 The rebalancing adjustment shown in step S26 then Figure 18 The machining marks shown in A4 are formed in the rebalancing adjustment area after the part has been trimmed and removed. Furthermore, if... Figure 9 , Figure 13 The fine-tuning of the balance as shown in step S27 then... Figure 18 The machining marks shown in A5 are formed in the fine-tuning balance adjustment area after the part has been trimmed and removed.

[0104] Thus, in Figure 18 , Figure 19 In the diagram, machining marks as shown in A1~A5, B1, and B2 are formed in various areas of the drive arm hammer 28 and the detection arm hammer 29.

[0105] It should be noted that machining marks are traces left in various areas of the drive arm hammer 28 and the detection arm hammer 29 due to detuning frequency and balance adjustment processes, such as marks left after removing metal films through laser processing or other methods. Alternatively, machining marks can also be marks left after forming metal films in various areas of the drive arm hammer 28 and the detection arm hammer 29 through processes such as vapor deposition or sputtering.

[0106] As mentioned above, such as Figure 1 As shown, the physical quantity detection device 1 of this embodiment includes a physical quantity detection element 10 and a support substrate 30. Additionally, as... Figure 2 As shown, the physical quantity detection element 10 has multiple detection arms 19 (19A, 19B), detection arm hammers 29 (29A, 29B) disposed on each detection arm, multiple drive arms 18 (18A~18D), drive arm hammers 28 (28A~28D) disposed on each drive arm, and a base 21. A support base plate 30 supports the physical quantity detection element 10 at its base 21.

[0107] like Figure 8 Step S12 Figure 9 , Figure 13 As shown in step S23, the manufacturing method of the physical quantity detection device 1 of this embodiment includes a step of balancing the vibration of the physical quantity detection element 10 in the drive arm hammer section 28 while the physical quantity detection element 10 is mounted on the support substrate 30. That is, steps S12 and S23 are performed after the step of mounting the physical quantity detection element 10 on the support substrate 30 as shown in steps S11 and S22. Furthermore, as Figure 8 Step S13 Figure 9 , Figure 13As shown in S24, the manufacturing method of this embodiment includes a step of adjusting the detuning frequency of the driving frequency and the detection frequency of the physical quantity detection element 10 after balance adjustment. That is, the step of adjusting the detuning frequency of the physical quantity detection element 10 is performed after the balance adjustment step in steps S12 and S23.

[0108] Thus, in the manufacturing method of this embodiment, the vibration balance adjustment of the physical quantity detection element 10 is performed. Therefore, it is possible to suppress unnecessary vibrations in the detection arm 19 during the driving of the physical quantity detection element 10, thereby preventing the adverse effects of vibration leakage. On the other hand, as Figure 7 As shown, if such a balancing adjustment is made, there is a concern that the fluctuations in the detuned frequency will become larger.

[0109] Regarding this point, according to this embodiment, after the balance adjustment step, a step is performed to adjust the detuning frequency of the physical quantity detection element 10. Thus, as... Figure 12 , Figure 15 As shown, it is possible to reduce the fluctuation of the detuning frequency, which increases due to balance adjustment. Therefore, it is possible to reduce the fluctuation of component sensitivity based on the detuning frequency fluctuation, and also to achieve high sensitivity of the physical quantity detection device 1. For example, in Figure 12 , Figure 15 In this process, the detuning frequency, which is set to 800Hz, can be set to a lower frequency, such as 400Hz. As the detuning frequency becomes lower, the sensitivity of the component becomes higher, thus enabling the physical quantity detection device 1 to achieve high sensitivity.

[0110] In addition, such as Figure 9 , Figure 13 As shown in step S26, the manufacturing method of this embodiment includes a step of rebalancing the vibration of the physical quantity detection element 10 in the drive arm hammer section 28 after adjusting the detuned frequency. That is, in this embodiment, after the balance adjustment in step S23, the detuned frequency is adjusted as shown in steps S24 and S25; however, after the adjustment of the detuned frequency, the rebalancing adjustment as shown in step S26 is performed.

[0111] In this way, by adjusting the detuned frequency after balance adjustment, even if the vibration balance of the physical quantity detection element 10 is disrupted, the unnecessary vibration of the physical quantity detection element 10 can be reduced through the rebalancing adjustment process, and unnecessary vibration that leads to unnecessary signal generation can be suppressed.

[0112] In addition, such as Figure 9 , Figure 13As shown in step S27, the manufacturing method of this embodiment includes a step of fine-tuning the balance of the vibration of the physical quantity detection element 10 after rebalancing adjustment. That is, in this embodiment, after the adjustment of the detuned frequency in steps S24 and S25, rebalancing adjustment is performed in step S26; however, after this rebalancing adjustment, fine-tuning balance adjustment is performed in step S27.

[0113] In this way, balance adjustment is performed in the balance adjustment region. After adjusting the detuned frequency, rebalancing adjustment is performed, followed by fine-tuning balance adjustment of the vibration of the physical quantity detection element 10. By performing such fine-tuning balance adjustment, precise adjustment can be made to further reduce the vibration balance of the physical quantity detection element 10 adjusted by the balance adjustment.

[0114] In addition, such as Figure 9 , Figure 13 As shown in step S23, in the manufacturing method of this embodiment, balance adjustment is performed in the balance adjustment area of ​​the drive arm hammer 28. As shown in step S24, the detuning frequency is adjusted by adjusting the detection frequency in the detection frequency adjustment area of ​​the detection arm hammer 29. That is, as... Figure 10 As shown, a balance adjustment area is provided in the hammer section 28 of the drive arm, such as... Figure 11 As shown, a detection frequency adjustment area is provided in the detection arm hammer section 29. Additionally, in Figure 9 , Figure 13 In step S23, balance adjustment is performed in the balance adjustment area of ​​the drive arm hammer 28. In step S24, detuning frequency adjustment is performed in the detection frequency adjustment area of ​​the detection arm hammer 29 based on the detection frequency adjustment.

[0115] In this way, by processing the workpiece such as metal in the balance adjustment area provided in the drive arm hammer 28, balance adjustment can be performed. After the balance adjustment, by processing in the detection frequency adjustment area provided in the detection arm hammer 29, detuning frequency adjustment can be performed.

[0116] Furthermore, the manufacturing method in this embodiment may also be as follows: Figure 13 As shown in step S23, balance adjustment is performed in the balance adjustment area of ​​the drive arm hammer 28, as follows: Figure 13 As shown in step S25, the detuning frequency is adjusted by adjusting the drive frequency in the drive frequency adjustment area of ​​the drive arm hammer 28. That is, as... Figure 14 As shown, a balance adjustment area and a drive frequency adjustment area are provided in the hammer section 28 of the drive arm. Additionally, in Figure 13In step S23, balance adjustment is performed in the balance adjustment area of ​​the drive arm hammer 28. In step S25, detuning frequency adjustment based on drive frequency adjustment is performed in the drive frequency adjustment area of ​​the drive arm hammer 28.

[0117] Thus, by performing machining on a workpiece such as metal in the balance adjustment area provided in the drive arm hammer section 28, balance adjustment can be implemented. Following this balance adjustment, by performing machining on the workpiece in the drive frequency adjustment area provided in the drive arm hammer section 28, detuning frequency adjustment can be implemented. Therefore, as... Figure 15 As shown, this can further reduce the fluctuation of the detuning frequency.

[0118] In addition, such as Figure 9 , Figure 13 As shown in step S26, the manufacturing method of this embodiment includes a step of rebalancing the vibration of the physical quantity detection element 10 in the drive arm hammer section 28 after adjusting the detuned frequency. Furthermore, as shown in step S23, balance adjustment is performed in the balance adjustment area of ​​the drive arm hammer section 28, and as shown in step S26, rebalancing adjustment is performed in the rebalancing adjustment area of ​​the drive arm hammer section 28. That is, as... Figure 10 , Figure 15 As shown, in the drive arm hammer section 28, in addition to the balance adjustment area, a rebalancing adjustment area is also provided, in which rebalancing adjustment is performed.

[0119] In this way, balance adjustment can be performed by processing workpieces such as metal in the balance adjustment area provided in the drive arm hammer section 28. Furthermore, after this balance adjustment, the detuning frequency is adjusted, and after this detuning frequency adjustment, processing workpieces is performed in the rebalancing adjustment area provided in the drive arm hammer section 28, thereby enabling rebalancing adjustment.

[0120] In addition, such as Figure 9 , Figure 13 As shown in step S27, the manufacturing method of this embodiment includes a step of fine-tuning the balance of the vibration of the physical quantity detection element 10 in the fine-tuning balance adjustment area of ​​the drive arm hammer 28 after rebalancing adjustment. That is, as... Figure 10 , Figure 15 As shown, in the drive arm hammer section 28, in addition to the ordinary balance adjustment area and the rebalance adjustment area, a fine-tuning balance adjustment area is also provided, in which fine-tuning balance adjustment is performed.

[0121] Thus, in the balance adjustment region, for example, coarse balance adjustment is performed, and after adjusting the detuned frequency, rebalancing adjustment is performed. Then, fine balance adjustment of the vibration of the physical quantity detection element 10 is performed in the fine balance adjustment region. By performing such fine balance adjustment, precise adjustments can be made to further reduce the vibration balance of the physical quantity detection element 10 after the coarse balance adjustment.

[0122] Furthermore, in this embodiment, such as Figure 18 As shown, the thickness of the drive arm hammer 28 in the balance adjustment region is the same as the thickness of the drive arm hammer 28 in the rebalance adjustment region.

[0123] In this way, by processing the workpiece in the rebalancing adjustment area with the same processing area as the workpiece in the balancing adjustment area, it is possible to process the workpiece in the rebalancing adjustment with the same processing amount as in the balancing adjustment.

[0124] Furthermore, in this embodiment, such as Figure 18 As shown, the thickness of the drive arm hammer 28 in the fine-tuning balance adjustment area is less than the thickness of the drive arm hammer 28 in the balance adjustment area.

[0125] In this way, by processing the workpiece in the fine-tuning balance adjustment region with the same processing area as the workpiece in the balance adjustment region (such as metal), it is possible to process the workpiece in the fine-tuning balance adjustment region with a smaller processing amount than in the balance adjustment. Therefore, fine-tuning balance adjustment with a smaller processing amount of the workpiece can be implemented.

[0126] In addition, such as Figure 1 As shown, the physical quantity detection device 1 of this embodiment includes a physical quantity detection element 10 and a support substrate 30. In addition, the physical quantity detection element 10 has a plurality of detection arms 19, a detection arm hammer 29 disposed on each detection arm, a plurality of drive arms 18, a drive arm hammer 28 disposed on each drive arm, and a base 21, and the support substrate 30 supports the physical quantity detection element 10 at its base 21.

[0127] In addition, such as Figure 19As shown, the detection arm hammer 29 has: a detection frequency adjustment area having machining marks after being processed by a first detuning frequency adjustment, which is performed before the physical quantity detection element 10 is mounted on the support substrate 30; and a detection frequency adjustment area having machining marks after being processed by a second detuning frequency adjustment, which is performed after the physical quantity detection element 10 is mounted on the support substrate 30. For example, the detection arm hammer 29 has: a detection frequency area having machining marks after being processed by a first detuning frequency adjustment before the physical quantity detection element 10 is mounted on the support substrate 30. Figure 19 The machining mark shown in B1; and the detection frequency adjustment area, having been processed by adjusting the second detuning frequency after the physical quantity detection element 10 is mounted on the support substrate 30. Figure 19 The machining mark shown in B2. Additionally, the drive arm hammer 28 has a balance adjustment area, which is adjusted for balance by the vibration of the physical quantity detection element 10 after machining. Figure 18 The machining marks shown in A2.

[0128] Thus, the physical quantity detection device 1 of this embodiment has, in the detection frequency adjustment area of ​​the detection arm hammer 29, a component processed by adjusting the first detuned frequency. Figure 19 The machining marks shown in B1 indicate that the detuning frequency was adjusted before mounting the physical quantity sensing element 10 on the support substrate 30. Furthermore, in the balance adjustment area of ​​the drive arm hammer 28, there is a machining mark resulting from balance adjustment. Figure 18 The machining mark shown in A2 is used to balance the physical quantity detection element 10. This balance adjustment adjusts the vibration balance of the physical quantity detection element 10, suppressing unnecessary vibration. Furthermore, in the detection frequency adjustment area of ​​the detection arm hammer 29, there is a machining area adjusted by a second detuning frequency. Figure 19 The machining marks shown in B2 are used to adjust the detuning frequency after the physical quantity detection element 10 is mounted on the support substrate 30. Therefore, if the fluctuation of the detuning frequency adjusted by the first detuning frequency adjustment becomes larger due to the balance adjustment, the fluctuation can be reduced by the second detuning frequency adjustment. Therefore, the fluctuation of the element sensitivity based on the detuning frequency fluctuation can be reduced, and the high sensitivity of the physical quantity detection device 1 can be achieved.

[0129] Furthermore, the drive arm hammer 28 has a rebalancing adjustment area, which is processed by rebalancing the vibration of the physical quantity detection element 10. Figure 18 The machining marks shown in A4.

[0130] In this way, even if the vibration balance of the physical quantity detection element 10 is disrupted by the second detuning frequency adjustment after the balance adjustment, the unnecessary vibration of the physical quantity detection element 10 can be reduced by the rebalancing adjustment in the rebalancing adjustment area, and the generation of unnecessary signals based on unnecessary vibration can be suppressed.

[0131] In addition, the drive arm hammer 28 has a fine-tuning balance adjustment area, which has the machining marks shown in A5 after fine-tuning balance adjustment by the vibration of the physical quantity detection element 10.

[0132] Thus, in the physical quantity detection device 1 of this embodiment, coarse balance adjustment of the vibration of the physical quantity detection element 10 is performed in the balance adjustment region, and fine balance adjustment of the vibration of the physical quantity detection element 10 is performed in the fine balance adjustment region. By performing such fine balance adjustment, the vibration balance of the physical quantity detection element 10 adjusted by coarse balance adjustment is further reduced, and fine adjustment is performed.

[0133] Furthermore, the drive arm hammer 28 has a drive frequency adjustment area, which is processed by adjusting the second detuning frequency. Figure 18 The machining marks shown in A3.

[0134] Thus, in the physical quantity detection device 1 of this embodiment, with the physical quantity detection element 10 mounted on the support substrate 30, the drive frequency is adjusted in the drive frequency adjustment area of ​​the drive arm hammer 28. By adjusting the drive frequency of the drive arm hammer 28 in this way, the detuning frequency is adjusted, such as... Figure 15 As shown, this can reduce the fluctuation of the detuning frequency.

[0135] 3. Circuit device

[0136] Figure 20 A detailed configuration example of the circuit device 20 of this embodiment is shown. Figure 20 The circuit device 20 includes a drive circuit 100, a detection circuit 110, a processing circuit 150, and a switching circuit 160. It should be noted that the circuit device 20 is not limited to... Figure 20 The following Figure 22 The composition can be modified by omitting some of its constituent elements or by adding other constituent elements.

[0137] The physical quantity detection element 10, as a sensor element, includes a driving vibrating plate 11, a detection vibrating plate 12, driving electrodes 13 and 14, and detection electrodes 15, 16, and 17. The driving vibrating plate 11 and... Figure 2The drive arms 18A, 18B, 18C, and 18D correspond to each other. The vibrating plate 12 used for testing is... Figure 2 The detection arms 19A and 19B correspond to this. The vibrating plates 11 and 12 are, for example, piezoelectric vibrating plates formed from thin plates of piezoelectric materials such as crystal.

[0138] A drive signal DS from the drive circuit 100 is supplied to the drive electrode 13, thereby causing the drive vibrator 11 to vibrate. Additionally, a feedback signal DG generated by the vibration of the vibrator 11 is input to the drive circuit 100 from the drive electrode 14. Furthermore, the vibration of the drive vibrator 11 causes the detection vibrator 12 to vibrate. The charge generated in the detection electrodes 15 and 16 by the vibration of the vibrator 12 is input as detection signals S1 and S2 to the Q / V conversion circuits 121 and 122 of the detection circuit 110. The circuit device 20 detects physical quantities such as angular velocity based on these detection signals S1 and S2.

[0139] The driving circuit 100 includes an amplifier circuit 102, a gain control circuit 104, a driving signal output circuit 106, and a synchronization signal output circuit 108.

[0140] Amplifier circuit 102 amplifies the feedback signal DG from physical quantity detection element 10. For example, as an I / V conversion circuit, amplifier circuit 102 converts the current feedback signal DG from physical quantity detection element 10 into a voltage signal DV and outputs it.

[0141] The gain control circuit 104 outputs a control voltage VC to the drive signal output circuit 106 to control the amplitude of the drive signal DS. For example, as an AGC circuit, the gain control circuit 104 automatically and variably adjusts the gain to keep the sensor sensitivity constant so that the amplitude of the feedback signal DG from the physical quantity detection element 10 is constant. The gain control circuit 104 includes a full-wave rectifier circuit that performs full-wave rectification of the AC signal DV output from the amplifier circuit 102, and an integrating circuit that performs integration processing on the signal from the full-wave rectifier circuit. In addition, the gain control circuit 104 outputs the control voltage VC obtained through integration processing to the drive signal output circuit 106.

[0142] The drive signal output circuit 106 outputs a drive signal DS based on the amplified signal DV from the amplifier circuit 102. For example, the drive signal output circuit 106 outputs a rectangular wave drive signal DS that is a high-level voltage, i.e., a high-voltage voltage, derived from the control voltage VC from the gain control circuit 104. It should be noted that variations are also possible, such as the drive signal output circuit 106 outputting a sinusoidal drive signal DS.

[0143] The synchronization signal output circuit 108 outputs a synchronization signal SYC. The synchronization signal SYC is generated based on the drive signal DS. Specifically, the synchronization signal SYC is a signal corresponding to the drive signal DS, such as a clock signal with the same frequency as the drive signal DS.

[0144] The detection circuit 110 includes an amplifier circuit 120, a synchronous detection circuit 130, a filter circuit 132, and an A / D conversion circuit 134. The amplifier circuit 120 includes Q / V conversion circuits 121 and 122, a differential amplifier circuit 124, and an AC amplifier circuit 126.

[0145] Q / V conversion circuits 121 and 122 convert the charge signals, i.e., detection signals S1 and S2, from the physical quantity detection element 10 into voltage signals. Q / V conversion circuits 121 and 122 are continuous charge-to-voltage conversion circuits with feedback resistors.

[0146] The differential amplifier circuit 124 differentially amplifies the signals QA1 and QA2 from the Q / V conversion circuits 121 and 122. Since the physical quantity signals included in signals QA1 and QA2 are differential signals, differential amplification is performed to amplify them. The AC amplifier circuit 126 amplifies the output signal QDF of the differential amplifier circuit 124 and outputs it as the output signal AQA of the amplifier circuit 120. For example, signal gain adjustment is performed in the AC amplifier circuit 126.

[0147] The synchronous detection circuit 130 performs synchronous detection on the output signal AQA of the amplifier circuit 120 based on the synchronization signal SYC. This allows the extraction of the physical quantity signal included in the output signal AQA as the desired signal, and the detection of the physical quantity.

[0148] The filter circuit 132 performs low-pass filtering and other filtering processes on the output signal of the synchronous detection circuit 130. The filter circuit 132 functions as a pre-filter for the subsequent A / D conversion circuit 134. Furthermore, the filter circuit 132 can also function as a circuit to attenuate unwanted signals that were not completely removed by the synchronous detection. The A / D conversion circuit 134 performs A / D conversion on the analog output signal from the filter circuit 132 and outputs digital detection data DQA. It should be noted that the physical quantity detection device 1 of this embodiment can also be an analog physical quantity detection device 1 that outputs an analog detection voltage generated by the synchronous detection of the synchronous detection circuit 130.

[0149] The processing circuit 150 performs various digital signal processing operations on the detection data DQA of the physical quantity from the detection circuit 110. The processing circuit 150 performs temperature correction calculations based on the detection data DQA and the temperature detection data. Furthermore, the processing circuit 150 performs temperature compensation processing on the detection data DQA based on the temperature correction value obtained through the temperature correction calculations. Additionally, the processing circuit 150 performs digital filtering processing such as low-pass filtering and notch filtering on the temperature-compensated detection data.

[0150] The switching circuit 160 is a circuit that performs switching processing for measuring the detection frequency and drive frequency. The switching circuit 160 can also be called a measurement or testing circuit. The switching circuit 160 includes switching circuits SW1 to SW8.

[0151] Furthermore, in the normal operating mode of the circuit device 20, the switching circuit 160 outputs the drive signal DS from the drive circuit 100 to the drive electrode 13 of the physical quantity detection element 10, and outputs the feedback signal DG from the drive electrode 14 to the drive circuit 100. Additionally, in the normal operating mode of the circuit device 20, the switching circuit 160 outputs the detection signals S1 and S2 from the detection electrodes 15 and 16 of the physical quantity detection element 10 to the detection circuit 110.

[0152] On the other hand, in the detection frequency measurement mode, the detection circuit 110 outputs a drive signal DS from the drive circuit 100 to the detection electrode 15 of the physical quantity detection element 10, and outputs the signal from the detection electrode 16 as a feedback signal DG to the drive circuit 100. Thus, the detection frequency signal is output from the circuit device 20 as the drive signal DS, and an external tester (processing device) measures the detection frequency based on the drive signal DS. Furthermore, in the drive frequency measurement mode, the detection circuit 110 outputs a drive signal DS from the drive circuit 100 to the drive electrode 13 of the physical quantity detection element 10, and outputs the signal from the drive electrode 14 as a feedback signal DG to the drive circuit. Thus, the drive frequency signal is output from the circuit device 20 as the drive signal DS, and an external tester measures the drive frequency based on the drive signal DS. Additionally, based on the measured detection frequency and drive frequency, a detuning frequency is measured, and based on the measured detuning frequency, the detuning frequency is adjusted.

[0153] For example Figure 20This diagram illustrates the switching states of switching circuits SW1 to SW8 of the switching circuit 160 in both the normal operating mode and the drive frequency measurement mode. In the normal operating mode, the drive signal DS is input from the drive circuit 100 to the drive electrode 13 via switching circuits SW1 and SW3 of the switching circuit 160, and the feedback signal DG from the drive electrode 14 is input to the drive circuit 100 via switching circuits SW4 and SW2. Furthermore, in the normal operating mode, the detection signal S1 from the detection electrode 15 is input to the detection circuit 110 via switching circuits SW5 and SW7, and the detection signal S2 from the detection electrode 16 is input to the detection circuit 110 via switching circuits SW6 and SW8.

[0154] Furthermore, in the mode for measuring the driving frequency, it is also as follows: Figure 20 As shown, the drive signal DS is input from the drive circuit 100 to the drive electrode 13 via the switching circuits SW1 and SW3 of the switching circuit 160, and the feedback signal DG from the drive electrode 14 is input to the drive circuit 100 via the switching circuits SW4 and SW2. Thus, the drive frequency signal is output from the circuit device 20 as the drive signal DS, and an external test instrument can determine the drive frequency based on the drive signal DS.

[0155] Figure 21 This diagram illustrates the switching states of switch circuits SW1 to SW8 of the switching circuit 160 in the frequency detection measurement mode. In the frequency detection measurement mode, the drive signal DS from the drive circuit 100 is input to the detection electrode 15 via switch circuits SW1 and SW5. Additionally, the signal from the detection electrode 16 is input to the drive circuit 100 as a feedback signal DG via switch circuits SW6 and SW2. Thus, the frequency detection signal is output from the circuit device 20 as the drive signal DS, and an external tester measures the frequency based on the drive signal DS. It should be noted that in the frequency detection measurement mode, the drive electrodes 13 and 14 are set to GND via switch circuits SW3 and SW4. Furthermore, the input terminals of the detection signals S1 and S2 of the amplifier circuit 120 are set to GND via switch circuits SW7 and SW8.

[0156] For example, a rectangular wave drive signal DS has a component of the resonant frequency of the vibrating plate 12 of the detection arm 19, i.e., the detection frequency. Therefore, this drive signal DS is input to the detection electrode 15 of the vibrating plate 12, and the signal from the detection electrode 16 is input to the drive circuit 100 as a feedback signal DG. Through AGC (Automatic Gain Control) gain control by the gain control circuit 104 of the drive circuit 100, the drive signal DS becomes the signal of the detection frequency. Therefore, an external testing instrument can determine the detection frequency by measuring the frequency of the drive signal DS.

[0157] Figure 22 , Figure 23 This is a diagram showing other detailed configuration examples of the circuit device 20 according to this embodiment. Figure 20 , Figure 21 same, Figure 22 The switching states of the switching circuit 160 in the normal operating mode and the drive frequency measurement mode are shown. Figure 23 The switching state of the switching circuit 160 in the detection frequency measurement mode is shown.

[0158] exist Figure 22 , Figure 23 In this process, wiring was implemented to substantially double the area of ​​the detection electrode. That is, in... Figure 20 , Figure 21 In this configuration, detection electrode 17 is set to GND. Regarding this, in... Figure 22 , Figure 23 In the detection circuit 110, the sum of the detection signal S1A from the detection electrode 15A of the vibrating plate 12P and the detection signal S2B from the detection electrode 17B of the vibrating plate 12Q, i.e., S1A+S2B, is input as detection signal S1. Furthermore, the sum of the detection signal S2A from the detection electrode 15B of the vibrating plate 12Q and the detection signal S1B from the detection electrode 17A of the vibrating plate 12P, i.e., S2A+S1B, is input as detection signal S2.

[0159] Here, the vibrating plate 12P used for testing and Figure 2 The detection arm 19A corresponds to the detection arm 19B, and the vibrating plate 12Q for detection corresponds to the detection arm 19B. Additionally, the detection electrodes 15A and 17A of the vibrating plate 12P correspond to... Figure 2 The detection electrodes 15 and 17 of the detection arm 19A correspond to those of the detection plate 12Q. Furthermore, the detection electrodes 15B and 17B of the vibrating plate 12Q correspond to those of the detection electrodes 15B and 17B of the vibrating plate 12Q. Figure 2 The detection electrodes 16 and 17 of the detection arm 19B correspond to each other.

[0160] In addition, Figure 22 , Figure 23 In the given diagram, S1A and S2B are in-phase signals, S2A and S1B are in-phase signals, and S1A and S2B are out-of-phase signals compared to S2A and S1B. Therefore, as... Figure 22 , Figure 23 As shown, the sum of the in-phase detection signals S1A and S2B is set as the detection signal S1, thereby... Figure 20 , Figure 21 In comparison, this can make the amplitude of the detection signal S1 approximately twice as large. Furthermore, such as Figure 22 , Figure 23 As shown, by setting the sum of the in-phase detection signals S2A and S1B as the detection signal S2, it is thus compared with... Figure 20 , Figure 21 In comparison, this can double the amplitude of the detection signal S2. That is, in Figure 22 , Figure 23 In addition to detection electrodes 15A and 15B, charge signals from detection electrodes 17A and 17B are also input to detection circuit 110 and amplified by Q / V conversion circuits 121 and 122. Thus, when detecting the same physical quantity such as angular velocity, the amount of charge input to detection circuit 110 increases, thereby improving the detection sensitivity of the physical quantity. This improvement in the signal-to-noise ratio (S / N) in physical quantity detection enables low-noise reduction.

[0161] in addition, Figure 22 The switching states of switching circuits SW1 to SW8 of switching circuit 160 in normal operating mode and drive frequency measurement mode are shown. In normal operating mode, the drive signal DS is input from drive circuit 100 to drive electrode 13 via switching circuits SW1 and SW3 of switching circuit 160, and the feedback signal DG from drive electrode 14 is input to drive circuit 100 via switching circuits SW4 and SW2. Furthermore, in normal operating mode, the sum of detection signal S1A from detection electrode 15A and detection signal S2B from detection electrode 17B is input to detection circuit 110 as detection signal S1 via switching circuits SW5 and SW7. Additionally, the sum of detection signal S2A from detection electrode 15B and detection signal S1B from detection electrode 17A is input to detection circuit 110 as detection signal S2 via switching circuits SW6 and SW8.

[0162] Furthermore, in the driving frequency measurement mode, such as Figure 22 As shown, the drive signal DS is input from the drive circuit 100 to the drive electrode 13 via the switching circuits SW1 and SW3 of the switching circuit 160, and the feedback signal DG from the drive electrode 14 is input to the drive circuit 100 via the switching circuits SW4 and SW2. Thus, the drive frequency signal is output from the circuit device 20 as the drive signal DS, and the external test instrument measures the drive frequency based on the drive signal DS.

[0163] Figure 23This diagram illustrates the switching states of the switching circuits SW1 to SW8 of the switching circuit 160 in the detection frequency measurement mode. In the detection frequency measurement mode, the drive signal DS from the drive circuit 100 is input to the detection electrodes 15A and 17B via the switching circuits SW1 and SW5. Additionally, the signals from the detection electrodes 15B and 17A are input to the drive circuit 100 as feedback signals DG via the switching circuits SW6 and SW2. Thus, the detection frequency signal is output from the circuit device 20 as the drive signal DS, and an external test instrument can measure the detection frequency based on the drive signal DS. Furthermore, based on the measured drive frequency and detection frequency, the detuning frequency is measured, and the detuning frequency is adjusted.

[0164] Thus, in this embodiment, the drive arm 18 includes a drive electrode 13 for inputting a drive signal DS from the drive circuit 100, and a drive electrode 14 for outputting a feedback signal DG to the drive circuit 100. Drive electrode 13 is a first drive electrode, and drive electrode 14 is a second drive electrode. Furthermore, the detection arm 19 includes detection electrodes 15 (15A, 17B) for outputting a detection signal S1 (S1A+S2B) to the detection circuit 110, and detection electrodes 16 (15B, 17A) for outputting a detection signal S2 (S2A+S1B) to the detection circuit 110. Detection signal S1 is a first detection signal, and detection signal S2 is a second detection signal. Furthermore, detection electrode 15 is a first detection electrode, and detection electrode 16 is a second detection electrode.

[0165] In addition, in this embodiment, such as Figure 21 , Figure 23 As shown, a drive signal DS is input to detection electrodes 15 (15A, 17B), and the signal from detection electrodes 16 (15B, 17A) is input to the drive circuit 100 as a feedback signal DG, thereby determining the detection frequency. For example, the drive signal DS for the detection frequency is input from the circuit device 20 to a tester (processing device), and the detection frequency is determined by the tester. Furthermore, as... Figure 20 , Figure 22 As shown, the drive signal DS is input to the drive electrode 13, and the feedback signal DG from the drive electrode 14 is input to the drive circuit 100 to determine the drive frequency. For example, the drive signal DS of the drive frequency is input from the circuit device 20 to the tester, and the drive frequency is determined by the tester.

[0166] In this way, the detection frequency and driving frequency of the physical quantity detection element 10 can be measured effectively using the drive circuit 100 and the detection circuit 110. In addition, based on the measured detection frequency and driving frequency, the detuning frequency is measured, and the detuning frequency is adjusted based on the measurement result, which can reduce the fluctuation of the detuning frequency.

[0167] As explained above, the manufacturing method of this embodiment is a method for manufacturing a physical quantity detection device. This physical quantity detection device includes: a physical quantity detection element having multiple detection arms, a detection arm hammer portion disposed on each detection arm, multiple drive arms, a drive arm hammer portion disposed on each drive arm, and a base; and a support substrate supporting the physical quantity detection element at the base. Furthermore, the manufacturing method of this embodiment includes the following steps: while the physical quantity detection element is mounted on the support substrate, balancing the vibration of the physical quantity detection element in the drive arm hammer portion; and after balancing, adjusting the detuning frequency of the drive frequency and detection frequency of the physical quantity detection element.

[0168] According to this embodiment, the vibration of the physical quantity detection element is balanced, thus suppressing unnecessary vibrations and signals generated in the detection arm during the driving of the physical quantity detection element. Furthermore, after the balancing process, a process for adjusting the detuning frequency of the physical quantity detection element is performed, thereby reducing the fluctuation of the detuning frequency that increases due to the balancing process. Therefore, fluctuations in the element sensitivity based on the detuning frequency fluctuations can be reduced.

[0169] In addition, this embodiment may also include the following steps: after adjusting the detuned frequency, rebalancing the vibration of the physical quantity detection element in the drive arm hammer section.

[0170] In this way, by adjusting the detuned frequency after balancing, even if the vibration balance of the physical quantity detection element is disrupted, unnecessary vibration of the physical quantity detection element can be reduced through the rebalancing process.

[0171] In addition, this embodiment may also include the following steps: after rebalancing, fine-tuning the balance of the vibration of the physical quantity detection element.

[0172] By performing such fine-tuning balance adjustments, precise balance adjustments can be made to further reduce the vibration balance of the physical quantity detection element adjusted by the balance adjustment.

[0173] Alternatively, in this embodiment, the balance adjustment can be performed in the balance adjustment area of ​​the drive arm hammer, and the detection frequency can be adjusted in the detection frequency adjustment area of ​​the detection arm hammer to adjust the detuning frequency.

[0174] In this way, balance adjustment can be performed by machining in the balance adjustment area provided in the drive arm hammer, and after the balance adjustment, the detuned frequency can be adjusted by machining in the detection frequency adjustment area provided in the detection arm hammer.

[0175] Alternatively, in this embodiment, balance adjustment can be performed in the balance adjustment area of ​​the drive arm hammer, and the drive frequency can be adjusted in the drive frequency adjustment area of ​​the drive arm hammer to adjust the detuned frequency.

[0176] In this way, balance adjustment can be performed by machining in the balance adjustment area provided in the drive arm hammer, and after the balance adjustment, the detuned frequency can be adjusted by machining in the drive frequency adjustment area provided in the drive arm hammer.

[0177] In addition, this embodiment may also include the following steps: after adjusting the detuned frequency, rebalancing the vibration of the physical quantity detection element is performed in the drive arm hammer section, balancing is performed in the balance adjustment area of ​​the drive arm hammer section, and rebalancing is performed in the rebalancing adjustment area of ​​the drive arm hammer section.

[0178] In this way, balance adjustment can be performed by machining in the balance adjustment area provided in the drive arm hammer. Furthermore, after this balance adjustment, the detuning frequency is adjusted, and after this detuning frequency adjustment, machining is performed in the rebalancing adjustment area provided in the drive arm hammer, thereby enabling rebalancing adjustment.

[0179] In addition, this embodiment may also include the following steps: after rebalancing, fine-tuning the vibration of the physical quantity detection element is performed in the fine-tuning balance adjustment area of ​​the drive arm hammer.

[0180] Thus, in the balance adjustment region, balance adjustment is performed, and after adjusting the detuned frequency, rebalancing adjustment is performed. Furthermore, in the fine-tuning balance adjustment region, fine-tuning balance adjustment is performed to adjust the vibration of the physical quantity detection element.

[0181] In addition, in this embodiment, the thickness of the drive arm hammer in the balance adjustment region may be the same as the thickness of the drive arm hammer in the rebalance adjustment region.

[0182] In this way, the processing area is the same as that in the rebalancing region, and the processing object is processed in the rebalancing region, so that the processing amount is the same as that in the balancing region, and the processing object in the rebalancing region can be processed.

[0183] In addition, in this embodiment, the thickness of the drive arm hammer in the fine-tuning balance adjustment area may be less than the thickness of the drive arm hammer in the balance adjustment area.

[0184] In this way, the processing object in the fine-tuning balance adjustment area is processed with the same processing area as the processing object in the balance adjustment area, thereby enabling the processing object in the fine-tuning balance adjustment to be processed with a smaller processing amount than that in the balance adjustment.

[0185] Furthermore, in this embodiment, the drive arm includes a first drive electrode for inputting a drive signal from the drive circuit and a second drive electrode for outputting a feedback signal to the drive circuit. The detection arm includes a first detection electrode for outputting a first detection signal to the detection circuit and a second detection electrode for outputting a second detection signal to the detection circuit. Additionally, in the process of adjusting the detuned frequency, the drive signal is input to the first detection electrode, and the signal from the second detection electrode is input to the drive circuit as a feedback signal to determine the detection frequency. Furthermore, the drive frequency is determined by inputting a drive signal to the first drive electrode and inputting the feedback signal from the second drive electrode to the drive circuit.

[0186] In this way, the driving circuit and the detection circuit can be effectively utilized to determine the detection frequency and driving frequency of the physical quantity detection element. Based on the measured detection frequency and driving frequency, the detuning frequency can be determined and adjusted.

[0187] Furthermore, the physical quantity detection device of this embodiment includes: a physical quantity detection element having multiple detection arms, a detection arm hammer portion disposed on each detection arm, multiple drive arms, a drive arm hammer portion disposed on each drive arm, and a base; and a support substrate supporting the physical quantity detection element at the base. Additionally, the detection arm hammer portion has: a first detection frequency adjustment region having machining marks resulting from a first detuning frequency adjustment performed before the physical quantity detection element is mounted on the support substrate; and a second detection frequency adjustment region having machining marks resulting from a second detuning frequency adjustment performed after the physical quantity detection element is mounted on the support substrate. Furthermore, the drive arm hammer portion has a balance adjustment region having machining marks resulting from balance adjustment of the vibration of the physical quantity detection element.

[0188] Thus, in this embodiment, the physical quantity detection device has machining marks in the detection frequency adjustment area of ​​the detection arm hammer section, which are the result of the first detuning frequency adjustment. The detuning frequency is adjusted before the physical quantity detection element is mounted on the support substrate. Furthermore, in the balance adjustment area of ​​the drive arm hammer section, there are machining marks, which are the result of the balance adjustment, for balancing the physical quantity detection element. Additionally, in the detection frequency adjustment area of ​​the detection arm hammer section, there are machining marks, which are the result of the second detuning frequency adjustment. The detuning frequency is adjusted after the physical quantity detection element is mounted on the support substrate. Therefore, even if the fluctuation of the detuning frequency adjusted by the first detuning frequency adjustment becomes larger due to balance adjustment, this fluctuation can be further reduced by the second detuning frequency adjustment.

[0189] In addition, in this embodiment, the drive arm hammer may have a rebalancing adjustment area, which has machining marks after rebalancing adjustment by vibration of a physical quantity detection element.

[0190] In this way, even if the vibration balance of the physical quantity detection element is disrupted by the second detuning frequency adjustment after the balance adjustment, the unnecessary vibration of the physical quantity detection element can be reduced by the rebalancing adjustment in the rebalancing adjustment area.

[0191] In addition, in this embodiment, the drive arm hammer may have a fine-tuning balance adjustment area, which has machining marks after fine-tuning balance adjustment by means of vibration of a physical quantity detection element.

[0192] By performing such fine-tuning balance adjustments, the vibration balance of the physical quantity detection element, which has been adjusted through coarse-tuning balance adjustments, is further reduced, allowing for precise adjustment.

[0193] In addition, in this embodiment, the drive arm hammer may have a drive frequency adjustment area, which has machining marks after being processed by adjusting the second detuning frequency.

[0194] In this way, with the physical quantity detection element mounted on the support substrate, the drive frequency is adjusted in the drive frequency adjustment area of ​​the drive arm hammer. By adjusting the detuned frequency, the fluctuation of the detuned frequency can be reduced.

[0195] Alternatively, in this embodiment, the circuit device for detecting physical quantities based on detection signals from a physical quantity detection element may be included, and the driving arm may include a first driving electrode for inputting a driving signal from a driving circuit of the circuit device, and a second driving electrode for outputting a feedback signal to the driving circuit. Alternatively, in this embodiment, the detection arm may include a first detection electrode for outputting a first detection signal to a detection circuit of the circuit device, and a second detection electrode for outputting a second detection signal to the detection circuit. Furthermore, in the second detuning frequency adjustment, a driving signal from the driving circuit is input to the first detection electrode, and a signal from the second detection electrode is input to the driving circuit as a feedback signal to determine the detection frequency of the physical quantity detection element. Alternatively, a driving signal from the driving circuit is input to the first driving electrode, and a feedback signal from the second driving electrode is input to the driving circuit to determine the driving frequency of the physical quantity detection element.

[0196] In this way, the driving circuit and the detection circuit can be effectively utilized to determine the detection frequency and driving frequency of the physical quantity detection element. Based on the measured detection frequency and driving frequency, the detuning frequency can be determined and adjusted.

[0197] It should be noted that, as described above, this embodiment has been described in detail. However, those skilled in the art will readily understand that various modifications can be made without substantially departing from the present invention in terms of new aspects and effects. Therefore, such modifications are all included within the scope of the present invention. For example, in the specification or drawings, different terms are described at least once along with broader or synonymous terms, and these different terms can be replaced at any point in the specification or drawings. Furthermore, the manufacturing process of the physical quantity detection device, the physical quantity detection device, the physical quantity detection element, the configuration of the circuit device, etc., are not limited to the situation described in this embodiment, and various modifications can be implemented.

Claims

1. A method for manufacturing a physical quantity detection device, characterized in that, The physical quantity detection device includes: a physical quantity detection element having multiple detection arms, a detection arm hammer disposed on each detection arm, multiple drive arms, a drive arm hammer disposed on each drive arm, and a base; and a support base plate supporting the physical quantity detection element on the base. The manufacturing method of the physical quantity detection device includes the following steps: With the physical quantity sensing element mounted on the support base plate, the vibration balance of the physical quantity sensing element is adjusted in the hammer section of the drive arm; and After the balance adjustment, the detuning frequency of the driving frequency and the detection frequency of the physical quantity detection element are adjusted.

2. The method for manufacturing the physical quantity detection device according to claim 1, characterized in that, The process includes the following steps: After the detuning frequency is adjusted, the vibration of the physical quantity detection element is rebalanced in the hammer section of the drive arm.

3. The method for manufacturing the physical quantity detection device according to claim 2, characterized in that, The process includes the following steps: After the rebalancing adjustment, fine-tuning of the vibration of the physical quantity detection element is performed.

4. The method for manufacturing the physical quantity detection device according to claim 1, characterized in that, The balance adjustment is performed in the balance adjustment area of ​​the drive arm hammer. The detection frequency is adjusted in the detection frequency adjustment area of ​​the detection arm hammer to adjust the detuned frequency.

5. The method for manufacturing the physical quantity detection device according to claim 1, characterized in that, The balance adjustment is performed in the balance adjustment area of ​​the drive arm hammer. The drive frequency is adjusted in the drive frequency adjustment area of ​​the drive arm hammer to adjust the detuned frequency.

6. The method for manufacturing the physical quantity detection device according to claim 1, characterized in that, The process includes the following steps: After adjusting the detuned frequency, the vibration of the physical quantity detection element is rebalanced in the hammer section of the drive arm. The balance adjustment is performed within the balance adjustment area of ​​the hammer section of the drive arm. The rebalancing adjustment is performed in the rebalancing adjustment area of ​​the drive arm hammer.

7. The method for manufacturing the physical quantity detection device according to claim 6, characterized in that, The process includes the following steps: After the rebalancing adjustment, the vibration of the physical quantity detection element is finely balanced in the fine-tuning balance adjustment area of ​​the drive arm hammer.

8. The method for manufacturing the physical quantity detection device according to claim 6, characterized in that, The thickness of the drive arm hammer in the balance adjustment region is the same as the thickness of the drive arm hammer in the rebalance adjustment region.

9. The method for manufacturing the physical quantity detection device according to claim 7, characterized in that, The thickness of the drive arm hammer in the fine-tuning balance adjustment area is less than the thickness of the drive arm hammer in the balance adjustment area.

10. The method for manufacturing the physical quantity detection device according to claim 1, characterized in that, The drive arm includes a first drive electrode for inputting a drive signal from the drive circuit, and a second drive electrode for outputting a feedback signal to the drive circuit. The detection arm includes a first detection electrode for outputting a first detection signal to the detection circuit, and a second detection electrode for outputting a second detection signal to the detection circuit. In the process of adjusting the detuned frequency, The driving signal is input to the first detection electrode, and the signal from the second detection electrode is input to the driving circuit as the feedback signal to determine the detection frequency. The driving signal is input to the first driving electrode, and the feedback signal from the second driving electrode is input to the driving circuit to determine the driving frequency.

11. A physical quantity detection device, characterized in that, include: A physical quantity detection element includes multiple detection arms, a detection arm hammer disposed on each of the multiple detection arms, multiple drive arms, a drive arm hammer disposed on each of the multiple drive arms, and a base. as well as Supporting substrate, supporting the base. The detection arm hammer includes: The first detection frequency adjustment area has a machining mark after being processed by a first detuning frequency adjustment performed before the physical quantity detection element is mounted on the support substrate; as well as The second detection frequency adjustment area has machining marks resulting from a second detuning frequency adjustment performed after the physical quantity detection element is mounted on the support substrate. The drive arm hammer includes a balance adjustment area, which has machining marks resulting from the balance adjustment of vibration by the physical quantity detection element.

12. The physical quantity detection device according to claim 11, characterized in that, The drive arm hammer includes a rebalancing adjustment area, which has machining marks resulting from rebalancing adjustment based on the vibration of the physical quantity detection element.

13. The physical quantity detection device according to claim 11, characterized in that, The drive arm hammer includes a fine-tuning balance adjustment area, which has machining marks after fine-tuning balance adjustment by the vibration of the physical quantity detection element.

14. The physical quantity detection device according to claim 11, characterized in that, The drive arm hammer includes a drive frequency adjustment area, which has machining marks after being processed by the second detuning frequency adjustment.

15. The physical quantity detection device according to claim 11, characterized in that, include: The circuit device detects a physical quantity based on a detection signal from the physical quantity detection element. The drive arm includes a first drive electrode for inputting a drive signal from the drive circuit of the circuit device, and a second drive electrode for outputting a feedback signal to the drive circuit. The detection arm includes a first detection electrode for outputting a first detection signal to the detection circuit of the circuit device, and a second detection electrode for outputting a second detection signal to the detection circuit. In the second detuning frequency adjustment The driving signal from the driving circuit is input to the first detection electrode, and the signal from the second detection electrode is input to the driving circuit as a feedback signal, thereby determining the detection frequency of the physical quantity detection element. The driving signal from the driving circuit is input to the first driving electrode, and the feedback signal from the second driving electrode is input to the driving circuit, thereby determining the driving frequency of the physical quantity detection element.

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