Co-packaged optical structures and methods of forming the same

Abstract

A co-packaged optical structure and a method of forming the same, the structure comprising: a substrate comprising opposite first and second faces; an optical waveguide structure extending through the substrate, the material of the optical waveguide structure comprising a transparent ceramic material; light engine modules disposed on the first and second faces of the substrate, respectively, the optical waveguide structure optically communicating the light engine modules on the first and second faces.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging technology, and in particular to a co-packaged optical structure and its formation method. Background Technology

[0002] Co-packaged optics (CPO) is an advanced optoelectronic integration technology. Its core lies in integrating an optical engine with a switching chip or computing chip onto the same substrate using advanced packaging technology, thereby significantly shortening the electrical signal transmission distance. This technology aims to solve the bottlenecks faced by traditional pluggable optical modules in scenarios such as artificial intelligence and high-performance computing, including high power consumption, limited bandwidth density, and signal latency. It can significantly reduce system power consumption and improve transmission bandwidth and energy efficiency, and is considered a key development direction for next-generation data center optical interconnects. CPO technology achieves "zero-distance contact" by co-packaging the optical engine (optical chip) and electronic chips (such as switching ASICs or GPUs) within the same substrate or slot, fundamentally reducing signal loss, latency, and power consumption.

[0003] CPO technology requires optical waveguide structures capable of optical communication to interconnect optical engines and electronic chips in order to improve the performance and power efficiency of the communication system. Summary of the Invention

[0004] The technical problem solved by this invention is to provide a co-packaged optical structure and its formation method to improve the performance and power efficiency of communication systems.

[0005] To address the aforementioned technical problems, the present invention provides a co-packaged optical structure, comprising: a substrate, the substrate including a first surface and a second surface opposite to each other; an optical waveguide structure penetrating the substrate, the material of the optical waveguide structure including a transparent ceramic material; and optical engine modules respectively disposed on the first surface and the second surface of the substrate, the optical waveguide structure optically communicating with the optical engine modules on the first surface and the second surface.

[0006] Optionally, it further includes: a buffer layer disposed between the optical waveguide structure and the substrate, wherein the refractive index of the buffer layer material is less than the refractive index of the optical waveguide structure material.

[0007] Optionally, the refractive index of the buffer layer material is in the range of 1.4 to 1.9; and the refractive index of the optical waveguide structure material is in the range of 1.5 to 3.

[0008] Optionally, the transparent ceramic material includes one or more combinations of indium tin oxide, indium zinc oxide, zinc oxide, aluminum zinc oxide, and indium gallium zinc oxide.

[0009] Optionally, the material of the buffer layer includes silicon oxide or magnesium fluoride.

[0010] Optionally, the thickness of the buffer layer is smaller than the diameter of the optical waveguide structure.

[0011] Optionally, it further includes: a first redistribution layer disposed on the first surface of the substrate, wherein the optical engine module located on the first surface of the substrate is located within the first redistribution layer.

[0012] Optionally, it further includes: a second redistribution layer disposed on the second side of the substrate, wherein the optical engine module located on the second side of the substrate is located within the second redistribution layer; and a functional module disposed on the second redistribution layer away from the second side of the substrate, wherein the functional module includes one or more combinations of an application-specific integrated circuit module and a high-bandwidth memory module.

[0013] Optionally, it also includes: a through-hole connection structure penetrating the substrate, the through-hole connection structure electrically connecting the first redistribution layer and the second redistribution layer.

[0014] Optionally, the first redistribution layer includes: a first dielectric structure and a first connection structure located within the first dielectric structure, wherein the first connection structure is electrically connected to the via connection structure; the second redistribution layer includes: a second dielectric structure and a second connection structure located within the second dielectric structure, wherein the second connection structure is electrically connected to the functional module and the via connection structure.

[0015] Accordingly, the present invention also provides a method for forming a co-packaged optical structure, comprising: providing a substrate, the substrate including a first side and a second side opposite to each other; forming a first through hole through the substrate in the substrate; forming an optical waveguide structure in the first through hole, the material of the optical waveguide structure including a transparent ceramic material; and respectively disposing optical engine modules on the first side and the second side of the substrate, the optical waveguide structure being optically connected to the optical engine modules on the first side and the second side.

[0016] Optionally, before forming the optical waveguide structure within the first through-hole, the method further includes: forming a buffer layer on the sidewall surface of the first through-hole, wherein the refractive index of the buffer layer material is less than the refractive index of the optical waveguide structure material; the buffer layer is located between the optical waveguide structure and the substrate.

[0017] Optionally, after forming an optical waveguide structure in the first through hole, the method further includes: forming a plurality of second through holes penetrating the substrate in the substrate; and forming a through hole connection structure in the second through holes.

[0018] Optionally, it further includes: forming a first redistribution layer on the first surface of the substrate, the first redistribution layer including: a first dielectric structure and a first connection structure located within the first dielectric structure, the first connection structure being electrically connected to the via connection structure, and the optical engine module located on the first surface of the substrate being located within the first redistribution layer.

[0019] Optionally, it further includes: forming a second redistribution layer on the second surface of the substrate, the second redistribution layer including: a second dielectric structure and a second connection structure located within the second dielectric structure, the second connection structure being electrically connected to the via connection structure, and the optical engine module located on the second surface of the substrate being located within the second redistribution layer.

[0020] Optionally, it further includes: a functional module disposed on the side of the second redistribution layer away from the second surface of the substrate, the functional module including one or more combinations of an application-specific integrated circuit module and a high-bandwidth memory module; the second connection structure electrically connecting the functional module and the through-hole connection structure.

[0021] Compared with the prior art, the technical solution of the present invention has the following beneficial effects: The co-packaged optical structure of the present invention includes optical engine modules respectively disposed on the first and second surfaces of the substrate, which are optically connected via a waveguide structure penetrating the substrate. The waveguide structure is made of transparent ceramic material and can interconnect the optical engine and electronic chip for optical communication, thereby improving the performance and power efficiency of the communication system, increasing computing power and saving energy, reducing signal interference and improving transmission efficiency, effectively shortening the data transmission path and increasing the data transmission volume. In addition, since the waveguide structure is disposed within the substrate and the optical engine modules are respectively disposed on the first and second surfaces of the substrate, the package size can be further reduced, realizing device miniaturization.

[0022] Furthermore, it also includes a first redistribution layer disposed on the first side of the substrate and a second redistribution layer disposed on the second side of the substrate, which can design the optical waveguide structure and the redistribution layer to coexist, realize the division of labor optimization design of optical signals and electrical signals, further improve the performance and power efficiency of the communication system, increase computing power and save energy consumption.

[0023] The method of forming the present invention involves setting optical engine modules on the first and second surfaces of the substrate respectively, and connecting them for optical communication through an optical waveguide structure penetrating the substrate. The material of the optical waveguide structure includes transparent ceramic material. The optical waveguide structure can interconnect the optical engine and the electronic chip for optical communication, thereby improving the performance and power efficiency of the communication system, increasing computing power and saving energy, reducing signal interference and improving transmission efficiency, effectively shortening the data transmission path and increasing the data transmission volume. Attached Figure Description

[0024] Figures 1 to 10 This is a schematic diagram of the formation process of the co-packaged optical structure in an embodiment of the present invention. Detailed Implementation

[0025] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0026] Figures 1 to 10 This is a schematic diagram of the formation process of the co-packaged optical structure in an embodiment of the present invention.

[0027] Please refer to Figure 1 A substrate 100 is provided, the substrate 100 including a first surface and a second surface opposite to each other.

[0028] The substrate 100 is made of a transparent material with a transmittance of 70% or more. The transparent material includes quartz glass, alkali-free panel glass, soda-lime glass, acrylic, polyethylene terephthalate, cyclic olefin polymers, sapphire, or transparent polyimide, etc.

[0029] In this embodiment, the substrate 100 is made of quartz glass.

[0030] In this embodiment, the refractive index of the substrate 100 is in the range of 1.4 to 1.8.

[0031] Please refer to Figure 2 A first through hole 101 is formed in the substrate 100, penetrating the substrate 100.

[0032] The process of forming the first through-hole 101 through the substrate 100 includes a femtosecond laser-induced deep etching (LIDE) process.

[0033] The cross-sectional shape of the first through hole 101 includes a circle or an ellipse. The sidewall surface of the circular or elliptical first through hole 101 is smooth and continuous, easy to form, and facilitates subsequent material adhesion to the sidewall surface of the first through hole 101, resulting in a large contact area and good bonding force.

[0034] The cross-sectional shape of the first through hole 101 is that of the cross-section perpendicular to the radial direction of the first through hole 101.

[0035] The number of the first through hole 101 can be one or more. In this embodiment, the number of the first through hole 101 is shown to be one.

[0036] Please refer to Figure 3A buffer layer 102 is formed on the sidewall surface of the first through hole 101; an optical waveguide structure 103 is formed inside the first through hole 101, the material of the optical waveguide structure 103 includes transparent ceramic material, and the buffer layer 102 is located between the optical waveguide structure 103 and the substrate 100.

[0037] The method for forming the buffer layer 102 and the optical waveguide structure 103 includes: forming a buffer material layer on the sidewall of the first through hole 101 and on the surface of the substrate 100; forming an optical waveguide material layer on the buffer material layer, wherein the optical waveguide material layer fills the first through hole 101; removing the buffer material layer and the optical waveguide material layer from the surface of the substrate 100, and forming a buffer layer 102 and an optical waveguide structure 103 within the first through hole 101 on the sidewall of the first through hole 101.

[0038] In this embodiment, the process for forming the buffer material layer includes chemical vapor deposition or atomic layer deposition.

[0039] The processes for forming optical waveguide material layers include: sol-gel filling process and in-situ sintering ceramicization process, vacuum injection filling and sintering process of nano-transparent ceramic slurry, or vapor deposition in-situ crystallization transparent ceramic process.

[0040] In this embodiment, the process of removing the buffer material layer and the optical waveguide material layer on the surface of the substrate 100 includes chemical mechanical polishing (CMP).

[0041] The buffer layer 102 is used to reduce the roughness of the sidewall of the first through hole 101 and can constrain the optical field when the subsequent optical waveguide structure transmits light, avoid light loss due to scattering, and improve transmission efficiency.

[0042] In other embodiments, the buffer layer may not be formed.

[0043] In this embodiment, the refractive index of the buffer layer 102 material is less than that of the optical waveguide structure 103 material. Therefore, when an optical signal propagates, the optical waveguide structure 103 can confine the light within itself, allowing the light to travel along a designated path without leakage, thus improving the optical signal transmission efficiency.

[0044] The refractive index of the buffer layer 102 material ranges from 1.4 to 1.9.

[0045] The material of the buffer layer 102 includes silicon oxide (SiOx, where x ranges from 1 to 2) or magnesium fluoride.

[0046] In this embodiment, the material of the buffer layer 102 includes silicon oxide (SiOx).

[0047] The refractive index of the material of the optical waveguide structure 103 ranges from 1.5 to 3.

[0048] The transparent ceramic material includes one or more combinations of indium tin oxide, indium zinc oxide, zinc oxide, aluminum zinc oxide, and indium gallium zinc oxide.

[0049] Transparent ceramic materials, as optical waveguide materials, possess high optical transparency and exhibit extremely low scattering and absorption losses in the visible to infrared wavelength range, ensuring efficient transmission of optical signals. They also possess excellent thermal stability, making them suitable for high-power laser transmission or harsh environment applications. Furthermore, they have high mechanical strength, high hardness, and wear resistance, making them more resistant to mechanical impact and scratches, thus improving the long-term reliability of devices.

[0050] In this embodiment, the thickness of the buffer layer 102 is smaller than the diameter of the optical waveguide structure 103. Therefore, the first via has a sufficiently large space to form the optical waveguide structure 103.

[0051] In this embodiment, the refractive index of the substrate 100 is less than that of the optical waveguide structure 103. Therefore, when an optical signal propagates, the optical waveguide structure 103 can confine the light within itself, allowing the light to travel along a designated path without leakage, thus improving the optical signal transmission efficiency.

[0052] Please refer to Figure 4 A plurality of second through holes 104 are formed in the substrate 100, penetrating the substrate 100.

[0053] The process of forming a plurality of second vias 104 through the substrate 100 includes a femtosecond laser-induced deep etching (LIDE) process.

[0054] The cross-sectional shape of the second through hole 104 includes a circle or an ellipse. The sidewall surface of the circular or elliptical second through hole 104 is smooth and continuous, easy to form, and facilitates subsequent material adhesion to the sidewall surface of the second through hole 104, resulting in a large contact area and good bonding force.

[0055] The cross-sectional shape of the second through hole 104 is that of the cross-section perpendicular to the radial direction of the second through hole 104.

[0056] In this embodiment, the diameter of the first through hole 101 is greater than or equal to the diameter of the second through hole 104, so that an optical waveguide structure 103 with a sufficient diameter width is formed in the first through hole 101.

[0057] The number of the second through holes 104 can be one or more. In this embodiment, the number of the second through holes 104 is shown to be three.

[0058] Please refer to Figure 5 A through-hole connection structure is formed within the second through-hole 104.

[0059] The through-hole connection structure includes one or more through-hole connection layers 105, which are located within the second through-hole 104 and fill the second through-hole 104.

[0060] The method for forming the through-hole connection structure includes: forming a through-hole material layer in the second through-hole 104 and on the surface of the substrate 100, wherein the through-hole material layer fills the second through-hole 104; removing the through-hole material layer on the surface of the substrate 100; and forming a through-hole connection layer 105 in one or more of the second through-holes 104.

[0061] The material of the through-hole connection layer 105 includes a metal or a metal nitride; the metal includes one or more combinations of copper, aluminum, tungsten, cobalt, nickel and tantalum; the metal nitride includes one or more combinations of tantalum nitride and titanium nitride.

[0062] In this embodiment, the material of the through-hole connection layer 105 includes copper. The process for forming the through-hole material layer includes electroplating or physical vapor deposition.

[0063] Next, optical engine modules are respectively disposed on the first and second surfaces of the substrate 100, and the optical waveguide structure optically communicates with the optical engine modules on the first and second surfaces; a first redistribution layer is formed on the first surface of the substrate 100; and a second redistribution layer is formed on the second surface of the substrate 100. For the subsequent formation process of the redistribution layers and optical engine modules, please refer to [reference needed]. Figures 5 to 9 .

[0064] The first redistribution layer includes: a first dielectric structure and a first connection structure located within the first dielectric structure, wherein the first connection structure is electrically connected to the via connection structure, and the optical engine module located on the first surface of the substrate 100 is located within the first redistribution layer.

[0065] The second redistribution layer includes a second dielectric structure and a second connection structure located within the second dielectric structure. The second connection structure is electrically connected to the via connection structure, and the optical engine module located on the second surface of the substrate is located within the second redistribution layer.

[0066] Please continue to refer to this. Figure 5 One or more first connection layers 106 and second connection layers 107 are formed on the first surface of the substrate 100. The first connection layer 106 is located on the through-hole connection layer 105, and each first connection layer 106 is electrically connected to one of the through-hole connection layers 105.

[0067] The method of forming the first connection layer 106 and the second connection layer 107 includes: forming a connection material layer on a first surface of the substrate 100; patterning the connection material layer; and forming one or more first connection layers 106 and one or more second connection layers 107 on the first surface of the substrate 100, wherein the one or more first connection layers 106 are mutually independent, and the first connection layer 106 and the second connection layer 107 are mutually independent.

[0068] The material of the connecting material layer includes a metal or a metal nitride; the metal includes one or more combinations of copper, aluminum, tungsten, cobalt, nickel and tantalum; the metal nitride includes one or more combinations of tantalum nitride and titanium nitride.

[0069] In this embodiment, the material of the connecting material layer includes copper. The process for forming the connecting material layer includes electroplating or physical vapor deposition.

[0070] In this embodiment, three first connection layers 106 and one second connection layer 107 are shown, with each first connection layer 106 located on a through-hole connection layer 105.

[0071] Please refer to Figure 6 A first light engine module 201 is disposed on the first surface of the substrate 100.

[0072] An optical engine (OE) is used in optical systems to completely convert, control, and couple electrical signals to optical signals for output.

[0073] The process of setting the first light engine module 201 on the first surface of the substrate 100 includes a bonding process.

[0074] Please continue to refer to this. Figure 6 A first dielectric layer 200 is formed on the first surface of the substrate 100, and the first dielectric layer 200 covers the first light engine module 201, the first connection layer 106 and the second connection layer 107.

[0075] The material of the first dielectric layer 200 includes a dielectric material, which includes one or more combinations of silicon oxide, silicon nitride, silicon carbide, silicon carbide, silicon oxynitride, aluminum oxide, aluminum nitride, silicon carbide nitride, and silicon carbide nitride.

[0076] In this embodiment, the material of the first dielectric layer 200 includes silicon oxide.

[0077] The method for forming the first dielectric layer 200 includes: forming a dielectric material layer on a first surface of the substrate 100; planarizing the dielectric material layer; and forming the first dielectric layer 200 on the first surface of the substrate 100.

[0078] The process for forming the dielectric material layer includes chemical vapor deposition; the process for planarizing the dielectric material layer includes chemical mechanical polishing.

[0079] Please refer to Figure 7 One or more first conductive layers 202, one or more second conductive layers 203, and one or more third conductive layers 204 are formed within the first dielectric layer 200. The first conductive layer 202 is electrically connected to the first connection layer 106, the second conductive layer 203 is electrically connected to the second connection layer 107, and the third conductive layer 204 is electrically connected to the first optical engine module 201.

[0080] This embodiment illustrates three mutually independent first conductive layers 202, two mutually independent second conductive layers 203, and one third conductive layer 204. One first conductive layer 202 is electrically connected to one first connecting layer 106, the two mutually independent second conductive layers 203 are electrically connected to one second connecting layer 107, and the one third conductive layer 204 is electrically connected to the first light engine module 201.

[0081] The first conductive layer 202, the second conductive layer 203, and the third conductive layer 204 are formed simultaneously. The method for forming the first conductive layer 202, the second conductive layer 203, and the third conductive layer 204 includes: forming one or more first grooves, one or more second grooves, and one or more third grooves within the first dielectric layer 200, wherein the first groove exposes a portion of the surface of the first connection layer 106, the second groove exposes a portion of the surface of the second connection layer 107, and the third groove exposes a portion of the surface of the first optical engine module 201; forming conductive material layers within the first grooves, the second grooves, the third grooves, and on the first dielectric layer 200; planarizing the conductive material layers; forming the first conductive layer 202 within the first groove, forming the second conductive layer 203 within the second groove, and forming the third conductive layer 204 within the third groove.

[0082] The conductive material layer is made of a metal or a metal nitride; the metal includes one or more of copper, aluminum, tungsten, cobalt, nickel and tantalum; the metal nitride includes one or more of tantalum nitride and titanium nitride.

[0083] In this embodiment, the material of the conductive material layer includes copper.

[0084] Please continue to refer to this. Figure 7A second dielectric layer 208 and one or more third connection layers 205, one or more fourth connection layers 206, and one or more fifth connection layers 207 are formed on the first dielectric layer 200. The third connection layer 205 is electrically connected to the first conductive layer 202, the fourth connection layer 206 is electrically connected to the second conductive layer 203, and the fifth connection layer 207 is electrically connected to the third conductive layer 204 and the second conductive layer 203.

[0085] This embodiment illustrates three mutually independent third connecting layers 205, one fourth connecting layer 206, and one fifth connecting layer 207. The third connecting layer 205 is located above the first conductive layer 202 and is electrically connected to the first conductive layer 202. The fourth connecting layer 206 is located above the second conductive layer 203 and is electrically connected to the second conductive layer 203. The fifth connecting layer 207 is located above the second conductive layer 203 and the third conductive layer 204 and is electrically connected to both the second conductive layer 203 and the third conductive layer 204.

[0086] The method for forming the third connecting layer 205, the fourth connecting layer 206, and the fifth connecting layer 207 includes: forming a second dielectric layer 208 on the first dielectric layer 200; forming a plurality of grooves in the second dielectric layer 208, the plurality of grooves exposing the surfaces of the first conductive layer 202, the second conductive layer 203, and the third conductive layer 204, respectively; forming a connecting material layer in the plurality of grooves and on the second dielectric layer 208; planarizing the connecting material layer until the surface of the second dielectric layer 208 is exposed; and forming the third connecting layer 205, the fourth connecting layer 206, and the fifth connecting layer 207 in the second dielectric layer 208.

[0087] The material of the connecting material layer includes a metal or a metal nitride; the metal includes one or more combinations of copper, aluminum, tungsten, cobalt, nickel and tantalum; the metal nitride includes one or more combinations of tantalum nitride and titanium nitride.

[0088] In this embodiment, the material of the connecting material layer includes copper.

[0089] The first connection structure includes: a first connection layer 106, a second connection layer 107, a third connection layer 205, a fourth connection layer 206, a fifth connection layer 207, a first conductive layer 202, a second conductive layer 203, and a third conductive layer 204.

[0090] The first dielectric structure includes a first dielectric layer 200 and a second dielectric layer 208 located on the first dielectric layer 200.

[0091] The material of the second dielectric layer 208 includes a dielectric material, which includes one or more combinations of silicon oxide, silicon nitride, silicon carbide, silicon carbide, silicon oxynitride, aluminum oxide, aluminum nitride, silicon carbide nitride, and silicon carbide nitride.

[0092] In this embodiment, the material of the first dielectric layer 200 is the same as the material of the second dielectric layer 208.

[0093] In this embodiment, the material of the second dielectric layer 208 includes silicon oxide.

[0094] In other embodiments, the material of the first dielectric layer may be different from the material of the second dielectric layer.

[0095] Please refer to Figure 8 One or more sixth connection layers 108 and seventh connection layers 109 are formed on the second surface of the substrate 100. The sixth connection layer 108 is located on the through-hole connection layer 105, and one of the sixth connection layers 108 is electrically connected to one of the through-hole connection layers 105.

[0096] The method for forming the sixth connection layer 108 and the seventh connection layer 109 includes: forming a connection material layer on the second surface of the substrate 100; patterning the connection material layer; and forming one or more sixth connection layers 108 and one or more seventh connection layers 109 on the second surface of the substrate 100, wherein the one or more sixth connection layers 108 are discrete from each other, and the sixth connection layer 108 and the seventh connection layer 109 are discrete from each other.

[0097] The material of the connecting material layer includes a metal or a metal nitride; the metal includes one or more combinations of copper, aluminum, tungsten, cobalt, nickel and tantalum; the metal nitride includes one or more combinations of tantalum nitride and titanium nitride.

[0098] In this embodiment, the material of the connecting material layer includes copper. The process for forming the connecting material layer includes electroplating or physical vapor deposition.

[0099] In this embodiment, three sixth connection layers 108 and one seventh connection layer 109 are shown, with each sixth connection layer 108 located on a through-hole connection layer 105.

[0100] Please refer to Figure 9 A second light engine module 301 is disposed on the second side of the substrate 100.

[0101] An optical engine (OE) is used in optical systems to completely convert, control, and couple electrical signals to optical signals for output.

[0102] The process of setting the second light engine module 301 on the second side of the substrate 100 includes a bonding process.

[0103] Please continue to refer to this. Figure 9 A third dielectric layer 300 is formed on the second surface of the substrate 100, and the third dielectric layer 300 covers the second optical engine module 301, the sixth connection layer 108 and the seventh connection layer 109.

[0104] The material of the third dielectric layer 300 includes a dielectric material, which includes one or more combinations of silicon oxide, silicon nitride, silicon carbide, silicon carbide, silicon oxynitride, aluminum oxide, aluminum nitride, silicon carbide nitride, and silicon carbide nitride.

[0105] In this embodiment, the material of the third dielectric layer 300 includes silicon oxide.

[0106] The method for forming the third dielectric layer 300 includes: forming a dielectric material layer on the second surface of the substrate 100; planarizing the dielectric material layer; and forming the third dielectric layer 300 on the second surface of the substrate 100.

[0107] The process for forming the dielectric material layer includes chemical vapor deposition; the process for planarizing the dielectric material layer includes chemical mechanical polishing.

[0108] Please continue to refer to this. Figure 9 One or more fourth conductive layers 302, one or more fifth conductive layers 303, and one or more sixth conductive layers 304 are formed within the third dielectric layer 300. The fourth conductive layer 302 is electrically connected to the sixth connection layer 108, the fifth conductive layer 303 is electrically connected to the seventh connection layer 109, and the sixth conductive layer 304 is electrically connected to the second optical engine module 301.

[0109] This embodiment illustrates three mutually independent fourth conductive layers 302, two mutually independent fifth conductive layers 303, and one sixth conductive layer 304. One of the fourth conductive layers 302 is electrically connected to one of the sixth connecting layers 108, the two mutually independent fifth conductive layers 303 are electrically connected to one of the seventh connecting layers 109, and the one sixth conductive layer 304 is electrically connected to the second light engine module 301.

[0110] The fourth conductive layer 302, the fifth conductive layer 303, and the sixth conductive layer 304 are formed simultaneously. The method for forming the fourth conductive layer 302, the fifth conductive layer 303, and the sixth conductive layer 304 includes: forming one or more fourth grooves, one or more fifth grooves, and one or more sixth grooves within the third dielectric layer 300; the fourth grooves exposing a portion of the surface of the sixth connecting layer 108; the fifth grooves exposing a portion of the surface of the seventh connecting layer 109; and the sixth grooves exposing a portion of the surface of the second optical engine module 301; forming conductive material layers within the fourth grooves, the fifth grooves, the sixth grooves, and on the third dielectric layer 300; planarizing the conductive material layers; forming the fourth conductive layer 302 within the fourth groove; forming the fifth conductive layer 303 within the fifth groove; and forming the sixth conductive layer 304 within the sixth groove.

[0111] The conductive material layer is made of a metal or a metal nitride; the metal includes one or more of copper, aluminum, tungsten, cobalt, nickel and tantalum; the metal nitride includes one or more of tantalum nitride and titanium nitride.

[0112] In this embodiment, the material of the conductive material layer includes copper.

[0113] Please continue to refer to this. Figure 9 A fourth dielectric layer 308 and one or more eighth connection layers 305, one or more ninth connection layers 306, and one or more tenth connection layers 307 are formed on the third dielectric layer 300. The eighth connection layer 305 is electrically connected to the fourth conductive layer 302, the ninth connection layer 306 is electrically connected to the fifth conductive layer 303, and the tenth connection layer 307 is electrically connected to the sixth conductive layer 304 and the fifth conductive layer 303.

[0114] This embodiment illustrates three mutually independent eighth connecting layers 305, one ninth connecting layer 306, and one tenth connecting layer 307. The eighth connecting layer 305 is located above and electrically connected to the fourth conductive layer 302. The ninth connecting layer 306 is located above and electrically connected to the fifth conductive layer 303. The tenth connecting layer 307 is located above and electrically connected to both the fifth conductive layer 303 and the sixth conductive layer 304.

[0115] The method for forming the eighth connecting layer 305, the ninth connecting layer 306, and the tenth connecting layer 307 includes: forming a fourth dielectric layer 308 on the third dielectric layer 300; forming a plurality of grooves in the fourth dielectric layer 308, the plurality of grooves exposing the surfaces of the fourth conductive layer 302, the fifth conductive layer 303, and the sixth conductive layer 304, respectively; forming a connecting material layer in the plurality of grooves and on the fourth dielectric layer 308; planarizing the connecting material layer until the surface of the fourth dielectric layer 308 is exposed; and forming the eighth connecting layer 305, the ninth connecting layer 306, and the tenth connecting layer 307 in the fourth dielectric layer 308.

[0116] The material of the connecting material layer includes a metal or a metal nitride; the metal includes one or more combinations of copper, aluminum, tungsten, cobalt, nickel and tantalum; the metal nitride includes one or more combinations of tantalum nitride and titanium nitride.

[0117] In this embodiment, the material of the connecting material layer includes copper.

[0118] The second connection structure includes: a sixth connection layer 108, a seventh connection layer 109, an eighth connection layer 305, a ninth connection layer 306, a tenth connection layer 307, a fourth conductive layer 302, a fifth conductive layer 303, and a sixth conductive layer 304.

[0119] The second dielectric structure includes a third dielectric layer 300 and a fourth dielectric layer 308 located on the third dielectric layer 300.

[0120] The material of the fourth dielectric layer 308 includes a dielectric material, which includes one or more combinations of silicon oxide, silicon nitride, silicon carbide, silicon oxycarbonate, silicon oxynitride, aluminum oxide, aluminum nitride, silicon oxycarbonate, and silicon oxycarbonate.

[0121] In this embodiment, the material of the third dielectric layer 300 is the same as the material of the fourth dielectric layer 308.

[0122] In this embodiment, the material of the fourth dielectric layer 308 includes silicon oxide.

[0123] In other embodiments, the material of the third dielectric layer may be different from the material of the fourth dielectric layer.

[0124] Please refer to Figure 10 A functional module 400 is provided on the side of the second redistribution layer away from the second surface of the substrate 100. The functional module 400 includes one or more combinations of an application-specific integrated circuit module and a high-bandwidth memory module.

[0125] In this embodiment, the functional module 400 is electrically connected to the first connection structure via solder 401. Specifically, the functional module 400 is electrically connected to the eighth connection layer 305 and the ninth connection layer 306 via solder 401.

[0126] The second connection structure electrically connects the functional module 400 and the through-hole connection structure.

[0127] In the co-packaged optical structure, the first optical engine module 201 and the second optical engine module 301 are optically connected through the optical waveguide structure 103. The first connection structure and the second connection structure are electrically connected through a through-hole connection structure to realize the communication connection between the first optical engine module 201 and the second optical engine module 301. The second optical engine module 301 is electrically connected to the functional module 400 through the second connection structure. The first optical engine module 201 is electrically connected to the functional module 400 through the first connection structure, the through-hole connection structure, and the second connection structure. The optical communication connection and electrical connection are realized on the same substrate, which can improve the performance and power efficiency of the communication system, increase computing power and save energy consumption, reduce signal interference and improve transmission efficiency, effectively shorten the data transmission path and increase the data transmission volume.

[0128] In addition, a first redistribution layer is provided on the first side of the substrate 100 and a second redistribution layer is provided on the second side of the substrate 100. The optical waveguide structure 103 and the redistribution layer can be designed to coexist, realizing the optimized design of the division of labor between optical signals and electrical signals, further improving the performance and power efficiency of the communication system, increasing computing power and saving energy.

[0129] Accordingly, embodiments of the present invention also provide a co-packaged optical structure, please refer to [link / reference]. Figure 10 ,include: Substrate 100, the substrate 100 includes opposing first and second surfaces; An optical waveguide structure 103 penetrates the substrate 100, and the material of the optical waveguide structure 103 includes a transparent ceramic material; The optical engine modules are respectively disposed on the first and second surfaces of the substrate 100, and the optical waveguide structure 103 optically communicates with the optical engine modules on the first and second surfaces.

[0130] The co-packaged optical structure, with optical engine modules respectively disposed on the first and second sides of the substrate 100, is optically connected via a waveguide structure 103 penetrating the substrate. The waveguide structure 103 is made of transparent ceramic material. The waveguide structure 103 can interconnect the optical engine and the electronic chip for optical communication, thereby improving the performance and power efficiency of the communication system, increasing computing power and saving energy, reducing signal interference and improving transmission efficiency, effectively shortening the data transmission path and increasing the data transmission volume. In addition, the waveguide structure is disposed within the substrate, and the optical engine modules are respectively disposed on the first and second sides of the substrate, which can further reduce the package size and realize device miniaturization.

[0131] In this embodiment, a buffer layer 102 is further included, which is disposed between the optical waveguide structure 103 and the substrate 100, wherein the refractive index of the material of the buffer layer 102 is less than the refractive index of the material of the optical waveguide structure 103.

[0132] In this embodiment, the refractive index of the buffer layer 102 material ranges from 1.4 to 1.9; the refractive index of the optical waveguide structure 103 material ranges from 1.5 to 3.

[0133] In this embodiment, the transparent ceramic material includes one or more combinations of indium tin oxide, indium zinc oxide, zinc oxide, aluminum zinc oxide, and indium gallium zinc oxide.

[0134] In this embodiment, the material of the buffer layer 102 includes silicon oxide or magnesium fluoride.

[0135] In this embodiment, the thickness of the buffer layer 102 is smaller than the diameter of the optical waveguide structure 103.

[0136] In this embodiment, it further includes: a first redistribution layer disposed on the first surface of the substrate 100, wherein the light engine module located on the first surface of the substrate 100 is located within the first redistribution layer.

[0137] In this embodiment, it further includes: a second redistribution layer disposed on the second side of the substrate 100, wherein the optical engine module located on the second side of the substrate 100 is located within the second redistribution layer; and a functional module disposed on the second redistribution layer away from the second side of the substrate 100, wherein the functional module includes one or more combinations of an application-specific integrated circuit module and a high-bandwidth memory module.

[0138] In this embodiment, it further includes: a through-hole connection structure penetrating the substrate 100, the through-hole connection structure electrically connecting the first redistribution layer and the second redistribution layer.

[0139] In this embodiment, the first redistribution layer includes: a first dielectric structure and a first connection structure located within the first dielectric structure, wherein the first connection structure is electrically connected to the via connection structure; the second redistribution layer includes: a second dielectric structure and a second connection structure located within the second dielectric structure, wherein the second connection structure is electrically connected to the functional module and the via connection structure.

[0140] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A co-packaged optical structure, characterized in that, include: A substrate, the substrate including opposing first and second surfaces; An optical waveguide structure penetrating the substrate, wherein the material of the optical waveguide structure includes a transparent ceramic material; Optical engine modules are respectively disposed on the first and second surfaces of the substrate, and the optical waveguide structure optically communicates with the optical engine modules on the first and second surfaces.

2. The co-packaged optical structure as described in claim 1, characterized in that, Also includes: A buffer layer is disposed between the optical waveguide structure and the substrate, wherein the refractive index of the buffer layer material is less than the refractive index of the optical waveguide structure material.

3. The co-packaged optical structure as described in claim 2, characterized in that, The refractive index of the buffer layer material ranges from 1.4 to 1.9; the refractive index of the optical waveguide structure material ranges from 1.5 to 3.

4. The co-packaged optical structure as described in claim 3, characterized in that, The transparent ceramic material includes one or more combinations of indium tin oxide, indium zinc oxide, zinc oxide, aluminum zinc oxide, and indium gallium zinc oxide.

5. The co-packaged optical structure as described in claim 3, characterized in that, The material of the buffer layer includes silicon oxide or magnesium fluoride.

6. The co-packaged optical structure as described in claim 2, characterized in that, The thickness of the buffer layer is less than the diameter of the optical waveguide structure.

7. The co-packaged optical structure as described in claim 1, characterized in that, Also includes: The first redistribution layer is disposed on the first surface of the substrate, and the optical engine module located on the first surface of the substrate is located within the first redistribution layer.

8. The co-packaged optical structure as described in claim 7, characterized in that, Also includes: The second redistribution layer is disposed on the second side of the substrate, and the optical engine module located on the second side of the substrate is located within the second redistribution layer; The functional modules disposed on the second redistribution layer away from the second side of the substrate include one or more combinations of application-specific integrated circuit modules and high-bandwidth memory modules.

9. The co-packaged optical structure as described in claim 8, characterized in that, Also includes: A through-hole connection structure penetrating the substrate, wherein the through-hole connection structure electrically connects the first redistribution layer and the second redistribution layer.

10. The co-packaged optical structure as described in claim 9, characterized in that, The first redistribution layer includes: a first dielectric structure and a first connection structure located within the first dielectric structure, wherein the first connection structure is electrically connected to the via connection structure; the second redistribution layer includes: a second dielectric structure and a second connection structure located within the second dielectric structure, wherein the second connection structure is electrically connected to the functional module and the via connection structure.

11. A method for forming a co-packaged optical structure, characterized in that, include: A substrate is provided, the substrate including opposing first and second surfaces; A first through-hole is formed in the substrate; An optical waveguide structure is formed within the first through-hole, and the material of the optical waveguide structure includes transparent ceramic material; Optical engine modules are respectively disposed on the first and second surfaces of the substrate, and the optical waveguide structure optically communicates with the optical engine modules on the first and second surfaces.

12. The method for forming a co-packaged optical structure as described in claim 11, characterized in that, Before forming the optical waveguide structure within the first through-hole, the method further includes: forming a buffer layer on the sidewall surface of the first through-hole, wherein the refractive index of the buffer layer material is less than the refractive index of the optical waveguide structure material; the buffer layer is located between the optical waveguide structure and the substrate.

13. The method for forming a co-packaged optical structure as described in claim 11, characterized in that, After forming an optical waveguide structure in the first through hole, the method further includes: forming a plurality of second through holes penetrating the substrate in the substrate; and forming a through hole connection structure in the second through holes.

14. The method for forming a co-packaged optical structure as described in claim 13, characterized in that, Also includes: A first redistribution layer is formed on the first surface of the substrate. The first redistribution layer includes a first dielectric structure and a first connection structure located within the first dielectric structure. The first connection structure is electrically connected to the via connection structure. The optical engine module located on the first surface of the substrate is located within the first redistribution layer.

15. The method for forming a co-packaged optical structure as described in claim 13, characterized in that, Also includes: A second redistribution layer is formed on the second surface of the substrate. The second redistribution layer includes a second dielectric structure and a second connection structure located within the second dielectric structure. The second connection structure is electrically connected to the via connection structure. The optical engine module located on the second surface of the substrate is located within the second redistribution layer.

16. The method for forming a co-packaged optical structure as described in claim 15, characterized in that, Also includes: A functional module is disposed on the second redistribution layer away from the second surface of the substrate. The functional module includes one or more combinations of an application-specific integrated circuit module and a high-bandwidth memory module. The second connection structure electrically connects the functional module and the through-hole connection structure.

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