Bandgap reference voltage generation circuit, integrated circuit, chip, and electronic device

Abstract

The present disclosure relates to a bandgap reference voltage generation circuit, an integrated circuit, a chip and an electronic device. The bandgap reference voltage generation circuit comprises: a voltage generation unit configured to generate a plurality of sets of positive temperature coefficient voltages and negative temperature coefficient voltages, and generate a bandgap reference voltage according to the plurality of sets of positive temperature coefficient voltages and negative temperature coefficient voltages; and an amplifier connected to the voltage generation unit and configured to clamp a voltage of the voltage generation unit. According to the present disclosure, the plurality of sets of positive temperature coefficient voltages and negative temperature coefficient voltages are used to "multiplex" the current, thereby generating the bandgap reference voltage. This current multiplexing manner reduces the noise of the bandgap reference voltage, and can achieve as low noise as possible without introducing additional noise suppression modules.

Description

Technical Field

[0001] This disclosure relates to the field of electronic technology, and in particular to a bandgap reference voltage generation circuit, integrated circuit, chip, and electronic device. Background Technology

[0002] A bandgap reference (BGR) provides a stable reference voltage source for a circuit system, used for voltage reference or comparison. It is called a bandgap reference because its reference voltage is close to the bandgap voltage of silicon. Bandgap references are key modules in analog or mixed-signal circuits and are widely used in analog-to-digital converters, sensors, the Internet of Things (IoT), wearable devices, and other fields.

[0003] In high-performance, especially high-precision and ultra-high-precision, circuit applications, the noise of each module has a significant impact on the entire circuit system. The output noise of the bandgap reference source, which provides the reference voltage for the circuit system, becomes crucial and can even directly determine the accuracy of the entire system. To achieve lower output noise levels, related technologies use dual-threshold junction field-effect transistors (JFETs) instead of bipolar junction transistors (BJTs) or metal-oxide-semiconductor field-effect transistors (MOSFETs) to reduce circuit noise, but this requires specialized processes. Summary of the Invention

[0004] This disclosure presents a bandgap reference voltage generation circuit, integrated circuit, chip, and electronic device.

[0005] According to one aspect of this disclosure, a bandgap reference voltage generation circuit is provided, the circuit comprising: a voltage generation unit for generating multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages, and generating a bandgap reference voltage based on the multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages; and an amplifier connected to the voltage generation unit for voltage clamping of the voltage generation unit.

[0006] In one possible implementation, the voltage generating unit includes a first MOS transistor, a zeroth BJT transistor, a first stacked BJT transistor, a second BJT transistor, a second stacked BJT transistor, a first branch resistor, a second branch resistor, a first resistor, and a second resistor. The source of the first MOS transistor is connected to the base of the zeroth BJT transistor, the gate of the first MOS transistor is connected to the output of the amplifier, the drain of the first MOS transistor is connected to ground, the emitter of the zeroth BJT transistor is used to receive the power supply voltage, and the collector of the zeroth BJT transistor is connected to a first terminal of the first branch resistor and a first terminal of the second branch resistor. The second terminal of the first branch resistor is connected to the first BJT transistor. The collector of the transistor, the base of the first BJT transistor, and the first input terminal of the amplifier are connected. The emitter of the first BJT transistor is connected to the collector and the base of the first stacked BJT transistor. The second branch resistor is connected to the first terminal of the first resistor and the second input terminal of the amplifier. The second terminal of the first resistor is connected to the collector and the base of the second BJT transistor. The emitter of the second BJT transistor is connected to the collector and the base of the second stacked BJT transistor. The emitters of the first and second stacked BJT transistors are connected to the first terminal of the second resistor. The second terminal of the second resistor is grounded.

[0007] In one possible implementation, the amplifier includes a third BJT transistor, a third stacked BJT transistor, a fourth BJT transistor, a fourth stacked BJT transistor, a fifth BJT transistor, a sixth BJT transistor, a second MOS transistor, a third resistor, a third stacked resistor, a fourth resistor, a fourth stacked resistor, and a fifth resistor. The emitter of the fifth BJT transistor is connected to the emitter of the sixth BJT transistor to receive a power supply voltage. The bases of the fifth and sixth BJT transistors are interconnected, as are the sources of the second MOS transistor. The drain of the second MOS transistor is connected to ground. The gate of the second MOS transistor, the collector of the fifth BJT transistor, and the collector of the third BJT transistor are interconnected. The collector of the sixth BJT transistor is connected to the collector of the fourth BJT transistor, serving as the output of the amplifier. The base of the third BJT transistor serves as the second input terminal of the amplifier. The emitter of the third BJT transistor is connected to the collector and base of the third stacked BJT transistor. The base of the fourth BJT transistor serves as the first input terminal of the amplifier. The emitter of the fourth BJT transistor is connected to the collector and base of the fourth stacked BJT transistor. The emitters of the third and fourth stacked BJT transistors, the first terminal of the third resistor, and the first terminal of the fourth resistor are connected together. The second terminal of the third resistor is connected to the first terminal of the third stacked resistor. The second terminal of the fourth resistor is connected to the first terminal of the fourth stacked resistor. The second terminals of the third and fourth stacked resistors and the first terminal of the fifth resistor are connected together. The second terminal of the fifth resistor is grounded.

[0008] In one possible implementation, the area ratio of the first BJT transistor to the area of ​​the second BJT transistor is 1:N, the area ratio of the first stacked BJT transistor to the area of ​​the second stacked BJT transistor is 1:N, the area ratio of the third BJT transistor to the area of ​​the fourth BJT transistor is 1:N, and the area ratio of the third stacked BJT transistor to the area of ​​the fourth stacked BJT transistor is 1:N, where N is an integer.

[0009] In one possible implementation, the area ratio of the first BJT transistor to the area of ​​the second BJT transistor is 1:2N, the area ratio of the first stacked BJT transistor to the area of ​​the second stacked BJT transistor is 1:2N, the area ratio of the third BJT transistor to the area of ​​the fourth BJT transistor is 1:N, and the area ratio of the third stacked BJT transistor to the area of ​​the fourth stacked BJT transistor is 1:N, where N is a positive integer.

[0010] In one possible implementation, the voltage drop across the first resistor is 4V. T lnN, where V T This represents thermal voltage.

[0011] In one possible implementation, the zeroth BJT transistor, the fifth BJT transistor, and the sixth BJT transistor are PNP type; the first BJT transistor, the first stacked BJT transistor, the second BJT transistor, the second stacked BJT transistor, the third BJT transistor, the third stacked BJT transistor, the fourth BJT transistor, and the fourth stacked BJT transistor are NPN type.

[0012] According to one aspect of this disclosure, an integrated circuit is provided, the integrated circuit including the bandgap reference voltage generation circuit as described above.

[0013] According to one aspect of this disclosure, a chip is provided, the chip comprising the integrated circuit described above.

[0014] According to one aspect of this disclosure, an electronic device is provided, the electronic device including the chip described above.

[0015] The bandgap reference voltage generation circuit of this disclosure can generate multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages. By using multiple sets of positive and negative temperature coefficient voltages, the current is "multiplexed" to generate the bandgap reference voltage. This current multiplexing method reduces the noise of the bandgap reference voltage and can achieve the lowest possible noise without introducing an additional noise suppression module.

[0016] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Other features and aspects of this disclosure will become clear from the following detailed description of exemplary embodiments with reference to the accompanying drawings. Attached Figure Description

[0017] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the specification, serve to illustrate the technical solutions of this disclosure.

[0018] Figure 1 The circuit diagram of a current-multiplexed bandgap reference voltage generation circuit in the related art is shown.

[0019] Figure 2 The circuit diagram shows another current-multiplexed bandgap reference voltage generation circuit in the related art.

[0020] Figure 3A schematic diagram of a noise small-signal model of a current-multiplexed bandgap reference voltage generation circuit in related technologies is shown.

[0021] Figure 4 The circuit diagram of a double current multiplexed bandgap reference voltage generation circuit in the related technology is shown.

[0022] Figure 5 A schematic diagram of a noise small-signal model of a double current multiplexed bandgap reference voltage generation circuit in related technologies is shown.

[0023] Figure 6 A block diagram of a bandgap reference voltage generation circuit according to an embodiment of the present disclosure is shown.

[0024] Figure 7 A circuit diagram is shown for a quadruple current multiplexed bandgap reference voltage generation circuit according to an embodiment of the present disclosure.

[0025] Figure 8 A schematic diagram of a noise small-signal model of a quadruple current multiplexed bandgap reference voltage generation circuit according to an embodiment of the present disclosure is shown.

[0026] Figure 9 A circuit diagram is shown for another quadruple current multiplexed bandgap reference voltage generation circuit according to an embodiment of the present disclosure.

[0027] Figure 10 A block diagram of an electronic device according to an embodiment of the present disclosure is shown. Detailed Implementation

[0028] Various exemplary embodiments, features, and aspects of this disclosure will now be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings denote elements that have the same or similar functions. Although various aspects of the embodiments are shown in the drawings, they are not necessarily drawn to scale unless specifically indicated otherwise.

[0029] The term “exemplary” as used herein means “serving as an example, embodiment, or illustration.” Any embodiment illustrated herein as “exemplary” is not necessarily to be construed as superior to or better than other embodiments.

[0030] In this document, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A alone, A and B simultaneously, and B alone. Furthermore, the term "at least one" in this document means any combination of at least two of any one or more elements. For example, including at least one of A, B, and C can mean including any one or more elements selected from the set consisting of A, B, and C.

[0031] Furthermore, to better illustrate this disclosure, numerous specific details are set forth in the following detailed description. Those skilled in the art will understand that this disclosure can be practiced without certain specific details. In some instances, methods, means, components, and circuits well known to those skilled in the art have not been described in detail in order to highlight the main points of this disclosure.

[0032] In related technologies, bandgap reference voltage generation circuits can generate positive temperature coefficient (PTAT) and negative temperature coefficient (CTAT) voltages, and add the PTAT and CTAT voltages in a suitable ratio to obtain a zero temperature coefficient voltage. The PTAT and CTAT voltages can be generated using two bipolar junction transistors (BJTs). As long as the current densities of these two BJTs are in a fixed ratio, the voltage difference between the base and emitter of the two BJTs can be used as the PTAT voltage, and the voltage drop between the base and emitter of either BJT can be used as the CTAT voltage.

[0033] Figure 1 The circuit diagram of a current-multiplexed bandgap reference voltage generation circuit in the related art is shown, such as... Figure 1 As shown, the circuit may include amplifier A1 and metal-oxide-semiconductor field-effect transistor (MOS transistor) M. 6,1 BJT transistor Q 2,1 BJT transistor Q 3,1 Resistance R 2,1 Resistance R 3,1 Resistance R 4,1 Resistance R 5,1 Among them, the MOS transistor M 6,1 The source is used to receive the power supply voltage V. DD MOS transistor M 6,1 The gate of the MOS transistor is connected to the output of amplifier A1. 6,1 The drain is connected to resistor R 5,1 The first terminal is used to output the bandgap reference voltage V. BG Resistance R 5,1 The second end is connected to resistor R 2,1 The first terminal and resistor R 3,1 The first terminal, resistor R 2,1 The second terminal is connected to the BJT transistor Q. 2,1 collector, BJT transistor Q 2,1The base of amplifier A1 and the first input terminal A, resistor R 3,1 The second end is connected to resistor R 4,1 The first terminal and the second input terminal B of amplifier A1, resistor R 4,1 The second terminal is connected to the BJT transistor Q. 3,1 collector, BJT transistor Q 3,1 The base of the BJT transistor Q 3,1 emitter and BJT transistor Q 2,1 The emitter is grounded.

[0034] Clamping resistor R of amplifier A1 2,1 Resistance R 3,1 The currents on the BJT transistor Q are equal, thus making the currents on the transistor Q equal. 2,1 and BJT transistor Q 3,1 These two branches have the same current density. This is due to the BJT transistor Q... 2,1 and BJT transistor Q 3,1 The area ratio is 1:N, therefore, the BJT transistor Q 2,1 emitter-base voltage V BE2,1 With BJT transistor Q 3,1 emitter-base voltage V BE3,1 The difference V BE2,1 -V BE3,1 It can be used as a positive temperature coefficient voltage, while the Q of a BJT transistor... 3,1 emitter-base voltage V BE3,1 This is a negative temperature coefficient voltage. It is achieved by using a resistor R. 3,1 Resistance R 4,1 Resistance R 5,1 It can proportionally add positive temperature coefficient voltages and negative temperature coefficient voltages to generate a zero temperature coefficient bandgap reference voltage V. BG Bandgap reference voltage V BG The voltage value is V BG,1 :

[0035]

[0036] Among them, V T For thermal voltage, V BE3,1 For BJT transistor Q 3,1 The emitter-base voltage, N is the BJT transistor Q. 2,1 With BJT transistor Q 3,1 The area ratio.

[0037] The bandgap reference circuit in related technologies has low accuracy due to the offset voltage of the comparator. In order to avoid correcting the amplifier offset voltage separately, an amplifier whose offset voltage is proportional to temperature can be used. Figure 2This diagram shows a circuit diagram of another current-multiplexed bandgap reference voltage generation circuit in the related art, such as... Figure 2 As shown, the left side is a single-current multiplexed bandgap reference voltage generation circuit, which uses an amplifier A1 whose offset voltage is proportional to temperature. The right side is the circuit of the amplifier A1.

[0038] Figure 2 The single-current multiplexed bandgap reference voltage generation circuit on the left may include amplifier A1 and MOS transistor M. 1,1 BJT transistor Q 6,1 BJT transistor Q 2,1 BJT transistor Q 3,1 Resistance R 2,1 Resistance R 3,1 Resistance R 4,1 Resistance R 5,1 Among them, the BJT transistor Q 6,1 The emitter is used to receive the power supply voltage V. DD BJT transistor Q 6,1 The base of the MOS transistor M is connected 1,1 The source of the MOS transistor M 1,1 The gate of the MOS transistor is connected to the output of amplifier A1. 1,1 The drain of the BJT transistor is grounded. 6,1 The collector is connected to resistor R 5,1 The first terminal is used to output the bandgap reference voltage V. BG Resistance R 5,1 The second end is connected to resistor R 2,1 The first terminal and resistor R 3,1 The first terminal, resistor R 2,1 The second terminal is connected to the BJT transistor Q. 2,1 collector, BJT transistor Q 2,1 The base of amplifier A1 and the first input terminal A, resistor R 3,1 The second end is connected to resistor R 4,1 The first terminal and the second input terminal B of amplifier A1, resistor R 4,1 The second terminal is connected to the BJT transistor Q. 3,1 collector, BJT transistor Q 3,1 The base of the BJT transistor Q 3,1 emitter and BJT transistor Q 2,1 The emitter is grounded.

[0039] The circuit diagram for amplifier A1 can be found here. Figure 2 The right side may include the BJT transistor Q. 4,1 BJT transistor Q 5,1 BJT transistor Q 0,1BJT transistor Q 1,1 MOS transistor M 0,1 Resistance R 0,1 Resistance R 1,1 Among them, the BJT transistor Q 0,1 base V IN+ As the second input terminal B of amplifier A1, the BJT transistor Q... 1,1 base V IN- As the first input terminal A of amplifier A1, the BJT transistor Q 0,1 emitter, BJT transistor Q 1,1 emitter, resistor R 0,1 The first terminal and resistor R 1,1 The first terminals are connected to each other, and the resistor R 0,1 The second terminal is connected to resistor R 1,1 Both terminals are grounded, BJT transistor Q 0,1 collector, BJT transistor Q 4,1 collector, MOS transistor M 0,1 The gates of the MOS transistor are interconnected. 0,1 The drain of the MOS transistor is grounded. 0,1 The source of the BJT transistor Q 4,1 The base of the BJT transistor Q 5,1 The bases of the BJT transistor are interconnected, and the Q-type bases are connected. 4,1 emitter and BJT transistor Q 5,1 The emitters are interconnected to receive the power supply voltage V. DD BJT transistor Q 5,1 collector and BJT transistor Q 1,1 The collectors are interconnected at point V. OUT This is used as the output terminal of amplifier A1. The BJT transistor Q... 0,1 With BJT transistor Q 1,1 The area ratio is N:N, which is the Q of the BJT transistor. 0,1 and BJT transistor Q 1,1 The area of ​​the BJT transistor Q 3,1 They have the same area.

[0040] Thus, the BJT transistor Q 1,1 BJT transistor Q 2,1 Resistance R 1,1 It forms a structure similar to the Q of a BJT transistor. 2,1 BJT transistor Q 3,1 Resistance R 4,1 The structure of the BJT transistor Q 2,1 or BJT transistor Q 3,1 The current in the branch is:

[0041]

[0042] Among them, I 2,1 Indicates the Q of the BJT transistor 2,1 The current in the branch, I 3,1 Indicates the Q of the BJT transistor 3,1 The current in the branch, V T Where N is the thermal voltage and Q is the BJT transistor. 2,1 With BJT transistor Q 3,1 The area ratio.

[0043] Similarly, BJT transistor Q 0,1 BJT transistor Q 1,1 The current in the branch is:

[0044]

[0045] Among them, I 0,1 Indicates the Q of the BJT transistor 0,1 The current in the branch, I 1,1 Indicates the Q of the BJT transistor 1,1 The current in the branch, V T Where N is the thermal voltage and Q is the BJT transistor. 2,1 With BJT transistor Q 3,1 The area ratio.

[0046] By controlling the resistor R 1,1 and resistance R 4,1 The proportional relationship can precisely control the tail current of amplifier A1, replacing the amplifier that requires additional bias circuit design and greatly reducing the complexity of the circuit.

[0047] It is important to note that the Q of the BJT transistor 4,1 It cannot be directly connected as a diode because the base current will flow directly into the collector. To prevent the influence of the current mirroring the base current, a MOS transistor M is introduced. 0,1 Because the gate of the MOS transistor has no leakage current, the current mirror of the BJT transistor Q is guaranteed. 4,1 and BJT transistor Q 5,1 Current matching. Similarly, to prevent the BJT transistor Q... 6,1 The base current flows into the branch of amplifier A1, and an additional MOS transistor M is introduced. 1,1 Further improve the Q of BJT transistors 4,1 and BJT transistor Q 5,1 Current matching.

[0048] Figure 3A schematic diagram of a noise small-signal model of a current-multiplexed bandgap reference voltage generation circuit in related technologies is shown, such as... Figure 3 As shown, the noise small-signal model of the single-current multiplexed bandgap reference voltage generation circuit can be used to calculate the output noise of the circuit. Since shot noise and 1 / f noise (also known as flicker noise, a type of noise with high power at low frequencies and low power at high frequencies) are the main noises of BJT transistors, the contribution of the small parasitic base resistance and collector resistance of the BJT transistor to the noise can be ignored in the noise small-signal model. Furthermore, amplifier A1 in this circuit can be considered as a... For ease of calculation, a noiseless amplifier with an input noise source uses a MOS transistor M. 1,1 and BJT transistor Q 6,1 Noise can also be included Inside. In this case, the MOS transistor M 1,1 It can be approximated by the small-signal AC current source V between its gate and source. gs1,1 ·g m1,1 It means, V gs1,1 M is a MOS transistor 1,1 The equivalent voltage between the gate and the source, g m1,1 M is a MOS transistor 1,1 Transconductance; BJT transistor Q 6,1 It can be approximated by an AC small-signal current source V π,1 ·g m6,1 It means, V π,1 For BJT transistor Q 6,1 The equivalent voltage between the base and emitter, g m6,1 For BJT transistor Q 6,1 transconductance, r π6,1 For BJT transistor Q 6,1 The equivalent resistance between the base and emitter.

[0049] In addition, I nd2,1 Indicates the Q of the BJT transistor 2,1 The noise current spectral density, I nd3,1 Indicates the Q of the BJT transistor 3,1 The noise current spectral density, r d2,1 Indicates the Q of the BJT transistor 2,1 The equivalent resistance, r d3,1 Indicates the Q of the BJT transistor 3,1 Equivalent resistance, E R2,1 Represents resistance R 2,1 The noise voltage spectral density, E R3,1 Represents resistance R 3,1 The noise voltage spectral density, E R4,1 Represents resistance R 4,1 The noise voltage spectral density, ER5,1 Represents resistance R 5,1 The noise voltage spectral density of each device is:

[0050]

[0051] Where k is the Boltzmann constant, approximately 1.38 × 10⁻⁶. -23 Joules / Kelvin (J / K), T represents temperature, E Ri,1 Represents resistance R i,1 The noise voltage spectral density.

[0052]

[0053] Among them, I nd2,1 Indicates the Q of the BJT transistor 2,1 The noise current spectral density, where q represents the charge constant, is approximately 1.6 × 10⁻⁶. -19 Coulomb, I c2,1 It is a BJT transistor Q. 2,1 collector current density, β 2,1 It is a BJT transistor Q. 2,1 The current gain factor is K, which is the device constant of the BJT transistor and is a process-dependent constant. f represents the frequency of the noise spectrum, which can be a user-defined frequency of interest.

[0054]

[0055] Among them, I nd3,1 Indicates the Q of the BJT transistor 3,1 The noise current spectral density, where N is the Q of the BJT transistor. 3,1 and BJT transistor Q 2,1 area ratio, I nd3_unit,1 Indicates the Q of the BJT transistor 3,1 The noise current spectral density branch, where q represents the charge constant, is approximately 1.6 × 10⁻⁶. -19 Coulomb, I c3,1 It is a BJT transistor Q. 3,1 collector current density, β 3,1 It is a BJT transistor Q. 3,1 The current gain factor is K, which is a device constant of the BJT transistor and is a process-dependent constant. f represents the frequency of the noise spectrum, which can be a user-defined frequency of interest. α is a constant in the range of 0.5-2.

[0056] The noise sources are independent of each other and can be directly superimposed to calculate the output reference noise. Since the single-current multiplexed bandgap reference voltage generation circuit is a differential structure, the noise sources can be equivalently represented at the input of amplifier A1, and its noise power spectral density is:

[0057]

[0058] Among them, E eq,1 E represents the noise voltage spectral density equivalent to the input of amplifier A1 in a current-multiplexed bandgap reference voltage generation circuit. n,1 E represents the equivalent input noise voltage spectral density of amplifier A1 itself. R2,1 Represents resistance R 2,1 The noise voltage spectral density, E R3,1 Represents resistance R 3,1 The noise voltage spectral density, E R4,1 Represents resistance R 4,1 The noise voltage spectral density, I nd2,1 Indicates the Q of the BJT transistor 2,1 The noise current spectral density, r d2,1 Indicates the Q of the BJT transistor 2,1 Equivalent resistance, I nd3,1 Indicates the Q of the BJT transistor 3,1 The noise current spectral density, r d3,1 Indicates the Q of the BJT transistor 3,1 The equivalent resistance.

[0059] In the single-current multiplexed bandgap reference voltage generation circuit, the feedback coefficient from the input terminal of amplifier A1 to the output terminal of the single-current multiplexed bandgap reference voltage generation circuit is:

[0060]

[0061] Where F1 represents the feedback coefficient from the input of amplifier A1 to the output of the single-current multiplexed bandgap reference voltage generation circuit, ΔV A,B ΔV represents the voltage drop between the first input terminal A and the second input terminal B of amplifier A1. A The voltage change at the first input terminal of amplifier A1 is represented by ΔV. B ΔV represents the voltage change at the second input terminal B of amplifier A1. BG r represents the bandgap reference voltage variable. d2,1 Indicates the Q of the BJT transistor 2,1 The equivalent resistance, r d3,1 Indicates the Q of the BJT transistor 3,1 The equivalent resistance.

[0062] With the feedback coefficient F1, the noise power spectral density at the output of the single-current multiplexed bandgap reference voltage generation circuit is:

[0063]

[0064] in, E represents the noise power spectral density at the output of a current-multiplexed bandgap reference voltage generation circuit. eq,1 F1 represents the noise voltage spectral density equivalent to the input of amplifier A1 in the single-current multiplexed bandgap reference voltage generation circuit, and E represents the feedback coefficient from the input of amplifier A1 to the output of the single-current multiplexed bandgap reference voltage generation circuit. R5,1 Represents resistance R 5,1 The noise voltage spectral density, r d3,1 Indicates the Q of the BJT transistor 3,1 The equivalent resistance.

[0065] Figure 4 The circuit diagram of a double current multiplexed bandgap reference voltage generation circuit in the related art is shown, such as... Figure 4 As shown, the left side is a double current multiplexed bandgap reference voltage generation circuit, which uses amplifier A2 whose offset voltage is proportional to temperature. The right side is the circuit of amplifier A2.

[0066] Figure 4 The double-current multiplexed bandgap reference voltage generation circuit on the left may include amplifier A1 and MOS transistor M. 1,2 BJT transistor Q 6,2 BJT transistor Q 2,2 BJT transistor Q 3,2 Resistance R 2,2 Resistance R 3,2 Resistance R 4,2 Resistance R 5,2 Among them, the BJT transistor Q 6,2 The emitter is used to receive the power supply voltage V. DD BJT transistor Q 6,2 The base of the MOS transistor M is connected 1,2 The source of the MOS transistor M 1,2 The gate of the MOS transistor is connected to the output of amplifier A1. 1,2 The drain of the BJT transistor is grounded. 6,2 The collector is connected to resistor R 5,2 The first terminal is used to output the bandgap reference voltage V. BG Resistance R 5,2 The second end is connected to resistor R 2,2 The first terminal and resistor R 3,2 The first terminal, resistor R 2,2 The second terminal is connected to the BJT transistor Q. 2,2 collector, BJT transistor Q 2,2 The base of amplifier A1 and the first input terminal A, resistor R 3,2 The second end is connected to resistor R 4,2The first terminal and the second input terminal B of amplifier A1, resistor R 4,2 The second terminal is connected to the BJT transistor Q. 3,2 collector, BJT transistor Q 3,2 The base of the BJT transistor Q 3,2 emitter and BJT transistor Q 2,2 The emitter is grounded.

[0067] The circuit diagram for amplifier A1 can be found here. Figure 2 The right side may include the BJT transistor Q. 4,2 BJT transistor Q 5,2 BJT transistor Q 0,2 BJT transistor Q 1,2 MOS transistor M 0,2 Resistance R 0,2 Resistance R 1,2 Among them, the BJT transistor Q 0,2 base V IN+ As the second input terminal B of amplifier A1, the BJT transistor Q... 1,2 base V IN- As the first input terminal A of amplifier A1, the BJT transistor Q 0,2 emitter, BJT transistor Q 1,2 emitter, resistor R 0,2 The first terminal and resistor R 1,2 The first terminals are connected to each other, and the resistor R 0,2 The second terminal is connected to resistor R 1,2 Both terminals are grounded, BJT transistor Q 0,2 collector, BJT transistor Q 4,2 collector, MOS transistor M 0,2 The gates of the MOS transistor are interconnected. 0,2 The drain of the MOS transistor is grounded. 0,2 The source of the BJT transistor Q 4,2 The base of the BJT transistor Q 5,2 The bases of the BJT transistor are interconnected, and the Q-type bases are connected. 4,2 emitter and BJT transistor Q 5,2 The emitters are interconnected to receive the power supply voltage V. DD BJT transistor Q 5,2 collector and BJT transistor Q 1,2 The collectors are interconnected at point V. OUT This is used as the output terminal of amplifier A1. The BJT transistor Q... 0,2 With BJT transistor Q 1,2 The area ratio is N:N, which is the Q of the BJT transistor. 0,2and BJT transistor Q 1,2 The area of ​​the BJT transistor Q 3,2 They have the same area.

[0068] like Figure 4 As shown, based on the single-current multiplexed bandgap reference voltage generation circuit, the Q of the BJT transistor can be changed. 0,2 and BJT transistor Q 1,2 The ratio causes the DC voltages at the input terminals of amplifier A2 to no longer be equal, but rather to be equal to those at the input terminals of the BJT transistor Q. 0,2 emitter-base voltage V BE0,2 With BJT transistor Q 1,2 emitter-base voltage V BE1,2 The difference, i.e.: V BE0,2 -V BE1,2 Thus, the resistance R 4,2 The voltage drop is no longer just a feature of the BJT transistor Q. 2,2 emitter-base voltage V BE2,2 With BJT transistor Q 3,2 emitter-base voltage V BE3,2 The difference V BE2,2 -V BE3,2 Instead:

[0069] V PTAT =(V BE0,2 -V BE1,2 )+(V BE2,2 -V BE3,2 ) = 2V T lnN (10)

[0070] Among them, V PTAT Represents resistance R 4,2 The voltage drop, V T Where N is the thermal voltage and Q is the BJT transistor. 2,2 With BJT transistor Q 3,2 The area ratio.

[0071] Compared to a single-current multiplexed bandgap reference voltage generation circuit, resistor R 4,2 The voltage drop across the resistor is doubled, which can be called double current multiplexing. To keep the branch current constant, resistor R... 4,2 Compared to resistance R 4,1 To magnify by two times, the resulting bandgap reference voltage V BG The voltage value is V BG,2 :

[0072]

[0073] in:

[0074] R3,1 +R 4,1 +2R 5,1 ≈R 3,2 +R 4,2 +2R 5,2 (12)

[0075] V BG,1 This represents the bandgap reference voltage value of the current-multiplexed bandgap reference voltage generation circuit, V. BG,2 This represents the bandgap reference voltage value of the double current multiplexed bandgap reference voltage generation circuit, V. T For thermal voltage, V BE3,2 For BJT transistor Q 3,2 The emitter-base voltage, N is the BJT transistor Q. 2,2 With BJT transistor Q 3,2 area ratio, V BE3,1 For BJT transistor Q 3,1 The emitter-base voltage.

[0076] Figure 5 A schematic diagram of a noise small-signal model of a double-current multiplexed bandgap reference voltage generation circuit in related technologies is shown, such as... Figure 5 As shown, following the approach of a single-current multiplexed bandgap reference voltage generation circuit, amplifier A2 can be considered as a circuit with... Noiseless amplifier with input noise source, MOS transistor M 1,2 and BJT transistor Q 6,2 Noise can also be included Inside. In this case, the MOS transistor M 1,2 It can be approximated by the small-signal AC current source V between its gate and source. gs1,2 ·g m1,2 It means, V gs1,2 M is a MOS transistor 1,2 The equivalent voltage between the gate and the source, g m1,2 M is a MOS transistor 1,2 Transconductance; BJT transistor Q 6,2 It can be approximated by an AC small-signal current source V π,2 ·g m6,2 It means, V π,2 For BJT transistor Q 6,2 The equivalent voltage between the base and emitter, g m6,2 For BJT transistor Q 6,2 transconductance, r π6,2 For BJT transistor Q 6,2 The equivalent resistance between the base and emitter.

[0077] In addition, Figure 5 middle, I nd2,1Indicates the Q of the BJT transistor 2,1 The noise current spectral density, I nd3,1 Indicates the Q of the BJT transistor 3,1 The noise current spectral density, r d2,1 Indicates the Q of the BJT transistor 2,1 The equivalent resistance, r d3,1 Indicates the Q of the BJT transistor 3,1 Equivalent resistance, E R2,1 Represents resistance R 2,1 The noise voltage spectral density, E R3,1 Represents resistance R 3,1 The noise voltage spectral density, E R4,1 Represents resistance R 4,1 The noise voltage spectral density, E R5,1 Represents resistance R 5,1 The noise voltage spectral density.

[0078] according to Figure 5 The small-signal model shown calculates the noise power spectral density of the double current multiplexed circuit equivalent to the input of amplifier A2 as follows:

[0079]

[0080] Among them, E eq,2 E represents the noise voltage spectral density equivalent to the input of amplifier A2 in the double-current multiplexed bandgap reference voltage generation circuit. n,2 E represents the equivalent input noise voltage spectral density of amplifier A2 itself. R2,2 Represents resistance R 2,2 The noise voltage spectral density, E R3,2 Represents resistance R 3,2 The noise voltage spectral density, E R4,2 Represents resistance R 4,2 The noise voltage spectral density, I nd2,2 Indicates the Q of the BJT transistor 2,2 The noise current spectral density, r d2,2 Indicates the Q of the BJT transistor 2,2 Equivalent resistance, I nd3,2 Indicates the Q of the BJT transistor 3,2 The noise current spectral density, r d3,2 Indicates the Q of the BJT transistor 3,2 The equivalent resistance.

[0081] In the double current multiplexed bandgap reference voltage generation circuit, the feedback coefficient from the input terminal of amplifier A2 to the output terminal of the double current multiplexed bandgap reference voltage generation circuit is:

[0082]

[0083] Where F2 represents the feedback coefficient from the input of amplifier A2 to the output of the double current multiplexed bandgap reference voltage generation circuit, ΔV A,B ΔV represents the voltage drop between the first input terminal A and the second input terminal B of amplifier A2. A The voltage change at the first input terminal of amplifier A2 is represented by ΔV. B The voltage change at the second input terminal B of amplifier A2 is represented by ΔV. BG r represents the bandgap reference voltage variable. d2,2 Indicates the Q of the BJT transistor 2,2 The equivalent resistance, r d3,2 Indicates the Q of the BJT transistor 3,1 The equivalent resistance.

[0084] With feedback coefficient F2, the noise power spectral density at the output of the double current multiplexed bandgap reference voltage generation circuit is:

[0085]

[0086] in, E represents the noise power spectral density at the output of the double-current multiplexed bandgap reference voltage generation circuit. eq,2 F1 represents the noise voltage spectral density equivalent to the input of amplifier A1 in the double-current multiplexed bandgap reference voltage generation circuit, and F2 represents the feedback coefficient from the input of amplifier A2 to the output of the double-current multiplexed bandgap reference voltage generation circuit. R5,2 Represents resistance R 5,2 The noise voltage spectral density, r d3,2 Indicates the Q of the BJT transistor 3,2 The equivalent resistance.

[0087] Equations (9) and (15) show that noise and power consumption are mutually exclusive. To reduce noise power by a factor of 2, that is... Reducing the resistance by half requires doubling the resistance of each resistor, but this doubles the current, meaning the power consumption doubles.

[0088] It is evident that in related technologies, power consumption and noise are mutually exclusive, with power consumption sacrificed to reduce circuit noise levels. The bandgap reference voltage generation circuits in these technologies have insufficient noise suppression capabilities, limiting the implementation of some ultra-high precision systems, such as ultra-high precision analog-to-digital converters (ADCs) and ultra-high precision low dropout regulators (LDOs). To achieve even lower noise, related technologies reduce the noise spectral density by decreasing resistance, but this results in a significant increase in power consumption. Adding noise suppression circuits, such as filters, is also an option, but the filter capacitors further increase power consumption, failing to meet the low-power requirements.

[0089] In view of this, in order to achieve excellent noise suppression and obtain ultra-low noise levels without adding additional noise suppression circuits or doubling power consumption, this disclosure provides a bandgap reference voltage generation circuit that can generate multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages. By using multiple sets of positive and negative temperature coefficient voltages, the current is "multiplexed" to generate the bandgap reference voltage. This current multiplexing method reduces the noise of the bandgap reference voltage and can achieve the lowest possible noise without introducing additional noise suppression modules.

[0090] Figure 6 A block diagram of a bandgap reference voltage generation circuit according to an embodiment of the present disclosure is shown, as follows: Figure 6 As shown, the bandgap reference voltage generation circuit includes: a voltage generation unit 1, used to generate multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages, and to generate a bandgap reference voltage based on the multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages; and an amplifier 2, connected to the voltage generation unit 1, used to perform voltage clamping on the voltage generation unit 1.

[0091] Among them, voltage generation unit 1 can generate multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages, and then add the multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages in an appropriate ratio to achieve a zero temperature coefficient voltage, that is, a bandgap reference voltage.

[0092] In some possible implementations, the bandgap reference voltage generation circuit can be applied to an integrated circuit and configured as a processing component. In one example, the processing component includes, but is not limited to, a standalone processor, discrete components, or a combination of processors and discrete components. The processor may include a controller in an electronic device with instruction execution capabilities. The processor can be implemented in any suitable manner, for example, by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components. Within the processor, executable instructions can be executed through hardware circuitry such as logic gates, switches, ASICs, programmable logic controllers, and embedded microcontrollers.

[0093] In one possible implementation, the bandgap reference voltage generation circuit can be applied to a terminal device, server, or other processing device. The terminal device can be a user equipment (UE), mobile device, user terminal, terminal, cellular phone, cordless phone, personal digital assistant (PDA), handheld device, computing device, in-vehicle device, wearable device, etc. The server can be a local server or a cloud server.

[0094] The embodiments disclosed herein do not limit the specific implementation of the voltage generating unit 1 and the amplifier 2. Those skilled in the art can configure them as needed, as long as the voltage generating unit 1 is used to generate multiple sets (e.g., at least four sets) of positive temperature coefficient voltages and negative temperature coefficient voltages, and generates a bandgap reference voltage based on the multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages, the amplifier is used to perform voltage clamping on the voltage generating unit, and the offset voltage of the amplifier 2 is proportional to the temperature.

[0095] In this embodiment of the disclosure, the positive temperature coefficient voltage is the voltage that increases with increasing temperature and is proportional to the absolute temperature; the negative temperature coefficient voltage is the voltage that decreases with increasing temperature and is complementary to the absolute temperature; and the zero temperature coefficient voltage is the voltage that does not change with temperature.

[0096] The following example, using a four-times current multiplexed bandgap reference voltage generation circuit, illustrates possible implementations of voltage generation unit 1 and amplifier 2. This circuit generates four sets of positive and negative temperature coefficient voltages, and then generates a bandgap reference voltage based on these four sets of voltages. It should be understood that the bandgap reference voltage generation circuit of this disclosure is not limited to four-times current multiplexing; it can be other multiplexed currents, and can be configured according to the actual application scenario. This disclosure does not limit this; it only uses a four-times current multiplexed bandgap reference voltage generation circuit as an example. Other multiplexed bandgap reference voltage generation circuits are similar to the four-times current multiplexed bandgap reference voltage generation circuit, and will not be described in detail here.

[0097] Figure 7 A circuit diagram of a four-times current multiplexed bandgap reference voltage generation circuit according to an embodiment of the present disclosure is shown, as follows: Figure 7 As shown, the bandgap reference voltage generation circuit of this disclosure embodiment may include, as Figure 7 The quadruple current multiplexed bandgap reference voltage generation circuit shown on the left can use amplifier A3 as amplifier 2. The circuit of amplifier A3 is shown on the right.

[0098] like Figure 7 As shown, the voltage generating unit 1 includes a first MOS transistor M 1,3 The zeroth BJT transistor Q 6,3 The first BJT transistor Q 2,3 First stacked BJT transistor Q 2s,3 The second BJT transistor Q 3,3 The second stacked BJT transistor Q 3s,3 The first branch resistance R 2,3 The second branch resistor R 3,3 First resistor R 4,3 Second resistor R 5,3 ;

[0099] Wherein, the first MOS transistor M 1,3 The source of the zeroth BJT transistor Q is connected. 6,3 The base of the first MOS transistor M 1,3 The gate of the first MOS transistor M is connected to the output terminal of the amplifier A3. 1,3 The drain of the zeroth BJT transistor Q is connected to ground. 6,3 The emitter is used to receive the power supply voltage V. DD The zeroth BJT transistor Q 6,3 The collector is connected to the first branch resistor R. 2,3 The first terminal and the second branch resistor R3,3 The first terminal; the first branch resistor R 2,3 The second terminal is connected to the first BJT transistor Q. 2,3 The collector of the first BJT transistor Q 2,3 The base of the amplifier A3 and the first input terminal A of the amplifier A3, the first BJT transistor Q 2,3 The emitter is connected to the first stacked BJT transistor Q. 2s,3 The collector of the first stacked BJT transistor Q 2s,3 The base of the second branch resistor R 3,3 The second end is connected to the first resistor R 4,3 The first terminal and the second input terminal B of the amplifier A3, the first resistor R 4,3 The second terminal is connected to the second BJT transistor Q. 3,3 The collector of the second BJT transistor Q 3,3 The base of the second BJT transistor Q 3,3 The emitter is connected to the second stacked BJT transistor Q. 3s,3 The collector of the second stacked BJT transistor Q 3s,3 The base of the first stacked BJT transistor Q; 2s,3 The emitter and the second stacked BJT transistor Q 3s,3 The emitter is connected to the second resistor R 5,3 The first terminal, the second resistor R 5,3 The second terminal is grounded.

[0100] like Figure 7 As shown, the amplifier A3 includes a third BJT transistor Q. 0,3 The third stacked BJT transistor Q 0s,3 The fourth BJT transistor Q 1,3 The fourth stacked BJT transistor Q 1s,3 The fifth BJT transistor Q 4,3 The sixth BJT transistor Q 5,3 The second MOS transistor M 0,3 Third resistor R 0,3 Third stacked resistor R 0s,3 Fourth resistor R 1,3 Fourth stacked resistor R 1s,3 Fifth resistor R 5s,3 ;

[0101] Among them, the fifth BJT transistor Q 4,3 The emitter of the sixth BJT transistor Q 5,3 The emitter phase is connected to receive the power supply voltage V. DDThe fifth BJT transistor Q 4,3 The base of the sixth BJT transistor Q 5,3 The base of the second MOS transistor M 0,3 The sources of the second MOS transistor are interconnected. 0,3 The drain of the second MOS transistor M is connected to ground. 0,3 The gate of the fifth BJT transistor Q 4,3 The collector of the third BJT transistor Q 0,3 The collectors of the sixth BJT transistor Q are interconnected. 5,3 The collector of the fourth BJT transistor Q 1,3 The collector of the amplifier is connected to the output terminal V of the amplifier A3. OUT The third BJT transistor Q 0,3 base V IN+ The third BJT transistor Q serves as the second input terminal of the amplifier A3. 0,3 The emitter is connected to the third stacked BJT transistor Q. 0s,3 The collector of the third stacked BJT transistor Q 0s,3 The base of the fourth BJT transistor Q 1,3 base V IN- The fourth BJT transistor Q serves as the first input terminal of the amplifier A3. 1,3 The emitter is connected to the fourth stacked BJT transistor Q. 1s,3 The collector of the fourth stacked BJT transistor Q 1s,3 The base of the third stacked BJT transistor Q 0s,3 The emitter, the fourth stacked BJT transistor Q 1s,3 The emitter, the third resistor R 0,3 The first terminal, the fourth resistor R 1,3 The first end is connected, and the third resistor R 0,3 The second end is connected to the third stacked resistor R 0s,3 The first end, the fourth resistor R 1,3 The second end is connected to the fourth stacked resistor R 1s,3 The first end, the third stacked resistor R 0s,3 The second end, the fourth stacked resistor R 1s,3 The second end, the fifth resistor R 5s,3 The first end is connected, and the fifth resistor R 5s,3 The second terminal is grounded.

[0102] Among them, the fifth BJT transistor Q 4,3It cannot be directly connected as a diode because the base current would flow directly into the collector. To prevent the influence of the current mirror on the base current, a second MOS transistor M is also provided. 0,3 Since the gate of the second MOS transistor has no leakage current, the current mirror of the fifth BJT transistor Q is guaranteed. 4,3 and the sixth BJT transistor Q 5,3 Current matching. Similarly, to prevent the zeroth BJT transistor Q... 6,3 The base current flows into the branch of amplifier A3, and an additional first MOS transistor M is introduced. 1,3 Further improve the Q of the fifth BJT transistor 4,3 and the sixth BJT transistor Q 5,3 Current matching.

[0103] contrast Figure 4 The double current multiplexed bandgap reference voltage generation circuit shown can... Figure 7 In the quadruple current multiplexed bandgap reference voltage generation circuit shown, the first BJT transistor Q... 2,3 The first stacked BJT transistor Q of the next layer 2s,3 In the second BJT transistor Q 3,3 The next stacked layer of the second stacked BJT transistor Q 3s,3 In the third BJT transistor Q 0,3 The third stacked BJT transistor Q is stacked on the next layer. 0s,3 .

[0104] In one possible implementation, the first BJT transistor Q 2,3 The area of ​​the second BJT transistor Q 3,3 The area ratio is 1:N, and the first stacked BJT transistor Q 2s,3 The area of ​​the second stacked BJT transistor Q 3s,3 The area ratio is 1:N, and the third BJT transistor Q 0,3 The area of ​​the fourth BJT transistor Q 1,3 The area ratio is 1:N, and the third stacked BJT transistor Q 0s,3 The area of ​​the fourth stacked BJT transistor Q 1s,3 The area ratio is 1:N, where N is an integer.

[0105] By controlling the fourth resistor R 1,3 Fourth stacked resistor R 1s,3 The summation result, along with the first resistor R 4,3The proportional relationship allows for precise control of the tail current of amplifier A3, ensuring that the tail current of amplifier A3 is exactly equal to the main branch current of the bandgap reference. This replaces the amplifier that requires additional bias circuitry, significantly reducing circuit complexity. For example, a fourth resistor R can be set. 1,3 With the fourth stacked resistor R 1s,3 The sum of the resistances is twice that of the first resistor R. 4,3 They have the same resistance value.

[0106] In order to make Figure 7 If the output bandgap reference voltage is consistent with the bandgap reference voltage generated by the single-current multiplexed bandgap reference voltage generation circuit and the double-current multiplexed bandgap reference voltage generation circuit, then it cannot output the bandgap reference voltage V at the upper end like the single-current multiplexed bandgap reference voltage generation circuit and the double-current multiplexed bandgap reference voltage generation circuit. BG Because if the bandgap reference voltage V is output at the upper end... BG The first BJT transistor Q 2,3 With the first stacked BJT transistor Q 2s,3 This will generate twice the negative temperature coefficient voltage, and the output bandgap reference voltage will also be doubled accordingly. Therefore, the lower end, i.e., the second stacked BJT transistor Q, is selected. 3s,3 collector output, such as Figure 7 As shown, the first resistor R 4,3 The pressure drop on becomes:

[0107] V PTAT =(V BE0,3 -V BE1,3 )+(V BE0s,3 -V BE1s,3 )+(V BE2,3 -V BE3,3 )+(V BE2s,3 -V BE3s,3 ) = 4V T lnN (16)

[0108] Among them, V PTAT Represents the first resistor R 4,3 The voltage drop across is determined by four sets of positive temperature coefficient voltages V. BE0,3 -V BE1,3 V BE0s,3 -V BE1s,3 V BE2,3 -V BE3,3 V BE2s,3 -V BE3s,3 Composed of, V BE0,3 For the third BJT transistor Q 0,3 emitter-base voltage, V BE1,3 For the fourth BJT transistor Q 1,3 emitter-base voltage, VBE0,3 For the third stacked BJT transistor Q 0s,3 emitter-base voltage, V BE1s,3 For the fourth stacked BJT transistor Q 1s,3 emitter-base voltage, V BE2,3 For the first BJT transistor Q 2,3 emitter-base voltage, V BE3,3 For the second BJT transistor Q 3,3 emitter-base voltage, V BE2s,3 For the first stacked BJT transistor Q 2s,3 emitter-base voltage, V BE3s,3 For the second stacked BJT transistor Q 3s,3 emitter-base voltage, V T Where N is the thermal voltage, and Q is the second BJT transistor. 3,3 With the first BJT transistor Q 2,3 The area ratio of to .

[0109] From formula (16), we can see that the first resistance R 4,3 The voltage drop is 4V T lnN, where V T Represents thermal voltage. First resistor R 4,3 The voltage drop is increased fourfold, which can be called quadruple current multiplexing, in order to maintain the branch current (e.g., the first BJT transistor Q). 2,3 The second BJT transistor Q 3,3 The third BJT transistor Q 0,3 The fourth BJT transistor Q 1,3 The branch in which it is located remains unchanged, and the first resistor R 4,3 It should be resistor R. 4,1 Four times that of the bandgap reference voltage V BG voltage value V BG,3 for:

[0110]

[0111] in:

[0112] 2R 5,3 ≈R 3,1 +R 4,1 +2R 5,1 (18)

[0113] V BG,3 This represents the bandgap reference voltage value of the four-times current multiplexed bandgap reference voltage generation circuit, V. BG1 This represents the bandgap reference voltage value of the current-multiplexed bandgap reference voltage generation circuit, V. T For thermal voltage, V BE3s,3 For the second stacked BJT transistor Q3s,3 The emitter-base voltage, N is the second BJT transistor Q 3,3 With the first BJT transistor Q 2,3 The area ratio of V to . BE3,1 For BJT transistor Q 3,1 The emitter-base voltage.

[0114] Figure 8 A schematic diagram of a noise small-signal model of a four-times current multiplexed bandgap reference voltage generation circuit according to an embodiment of the present disclosure is shown. For ease of noise comparison, as... Figure 8 As shown, the noise is first equivalent to the input of amplifier A3, the noise at point C is calculated, and then the corresponding output noise power spectral density is obtained through branch voltage division:

[0115]

[0116] Among them, E eq,3 E represents the noise voltage spectral density equivalent to the input of amplifier A3 of the four-times current multiplexed bandgap reference voltage generation circuit. eq,2 E represents the noise voltage spectral density equivalent to the input of amplifier A2 in the double-current multiplexed bandgap reference voltage generation circuit. n,3 E represents the equivalent input noise voltage spectral density of amplifier A3 itself. R2,3 R represents the resistance of the first branch. 2,3 The noise voltage spectral density, E R3,3 Indicates the second resistor R 3,3 The noise voltage spectral density, E R4,3 Represents the first resistor R 4,3 The noise voltage spectral density, I nd2,3 Indicates the first BJT transistor Q 2,3 The noise current spectral density, r d2,3 Indicates the first BJT transistor Q 2,3 Equivalent resistance, I nd2s,3 Indicates the first stacked BJT transistor Q 2s,3 The noise current spectral density, r d2s,3 Indicates the first stacked BJT transistor Q 2s,3 Equivalent resistance, I nd3,3 Indicates the second BJT transistor Q 3,3 The noise current spectral density, r d3,3 Indicates the second BJT transistor Q 3,3 Equivalent resistance, I nd3s,3 Indicates the second stacked BJT transistor Q 3s,3 The noise current spectral density, r d3s,3 Indicates the second stacked BJT transistor Q 3s,3 The equivalent resistance.

[0117] In the quadruple current multiplexed bandgap reference voltage generation circuit, the feedback coefficient from the input terminal of amplifier A3 to the output terminal of the quadruple current multiplexed bandgap reference voltage generation circuit is:

[0118]

[0119] Where F3 represents the feedback coefficient from the input of amplifier A3 to the output of the four-times current multiplexed bandgap reference voltage generation circuit, and F2 represents the feedback coefficient from the input of amplifier A2 to the output of the two-times current multiplexed bandgap reference voltage generation circuit, ΔV A,B ΔV represents the voltage drop between the first input terminal A and the second input terminal B of amplifier A3. A The voltage change at the first input terminal of amplifier A3 is represented by ΔV. B The voltage change at the second input terminal B of amplifier A3 is represented by ΔV. C express Figure 7 and Figure 8 Point C (i.e., the resistance R of the first branch) 2,3 Second branch resistor R 3,3 The voltage variable at the first terminal, ΔV BG r represents the bandgap reference voltage variable. d2,3 Indicates the first BJT transistor Q 2,3 The equivalent resistance, r d2s,3 Indicates the first stacked BJT transistor Q 2s,3 The equivalent resistance, r d3,3 Indicates the second BJT transistor Q 3,3 The equivalent resistance, r d3s,3 Indicates the second stacked BJT transistor Q 3s,3 The equivalent resistance.

[0120] Comparing the noise power spectral density of the four-times current multiplexed bandgap reference voltage generation circuit with that of the two-times current multiplexed bandgap reference voltage generation circuit:

[0121]

[0122] in, E represents the noise power spectral density at the output of the double-current multiplexed bandgap reference voltage generation circuit. eq,2 F2 represents the noise voltage spectral density equivalent to the input of amplifier A2 in the double-current multiplexed bandgap reference voltage generation circuit, and E represents the feedback coefficient from the input of amplifier A2 to the output of the double-current multiplexed bandgap reference voltage generation circuit. R5,2 Represents resistance R 5,2 The noise voltage spectral density; E represents the noise power spectral density at the output of the four-times current multiplexed bandgap reference voltage generation circuit. eq,3F3 represents the noise voltage spectral density equivalent to the input of amplifier A3 in the four-times current multiplexed bandgap reference voltage generation circuit, and E represents the feedback coefficient from the input of amplifier A3 to the output of the four-times current multiplexed bandgap reference voltage generation circuit. R5,3 Indicates the second resistor R 5,3 The noise voltage spectral density.

[0123] According to formula (21), the noise at the output of the four-times current multiplexed bandgap reference voltage generation circuit (i.e., the noise of the bandgap reference voltage) is less than the noise at the output of the two-times current multiplexed bandgap reference voltage generation circuit.

[0124] Although the four-times current multiplexed bandgap reference voltage generation circuit, constructed by direct stacking, exhibits better noise suppression at the output of the two-times current multiplexed bandgap reference voltage generation circuit, its noise suppression effect still needs further improvement. This is because the increased number of components introduces more noise sources, namely, the noise power spectral density. and Although doubling the current also doubles the feedback coefficient F3, its noise suppression effect is weakened, and the output noise is not significantly reduced. Therefore, to reduce the noise power spectral density... and To avoid doubling the power consumption, only the second BJT transistor Q can be used. 3,3 Second stacked BJT transistor Q 3s,3 The current in one branch doubles, while the current in other branches remains unchanged, resulting in only a 25% increase in power consumption. Meanwhile, the first BJT transistor Q... 2,3 With the second BJT transistor Q 3,3 First stacked BJT transistor Q 2s,3 With the second stacked BJT transistor Q 3s,3 The area ratio N also needs to be doubled to become 2N, resulting in an improved four-fold current multiplexing bandgap reference voltage generation circuit. Figure 9 This diagram shows a circuit diagram of another four-times current multiplexed bandgap reference voltage generation circuit according to an embodiment of the present disclosure, the structure of which is similar to... Figure 7 The same applies; please refer to the above text, and it will not be repeated here.

[0125] In one possible implementation, such as Figure 9 As shown, the first BJT transistor Q 2,3 The area of ​​the second BJT transistor Q 3,3 The area ratio is 1:2N, and the first stacked BJT transistor Q 2s,3 The area of ​​the second stacked BJT transistor Q 3s,3 The area ratio is 1:2N, and the third BJT transistor Q... 0,3 The area of ​​the fourth BJT transistor Q1,3 The area ratio is 1:N, and the third stacked BJT transistor Q 0s,3 The area of ​​the fourth stacked BJT transistor Q 1s,3 The area ratio is 1:N, where N is a positive integer.

[0126] By controlling the fourth resistor R 1,3 Fourth stacked resistor R 1s,3 The summation result, along with the first resistor R 4,3 The proportional relationship allows for precise control of the tail current of amplifier A3, ensuring that the tail current of amplifier A3 is exactly equal to the main branch current of the bandgap reference. This replaces the amplifier that requires additional bias circuitry, significantly reducing circuit complexity. For example, a fourth resistor R can be set. 1,3 With the fourth stacked resistor R 1s,3 The sum of the resistance values ​​and the first resistor R 4,3 They have the same resistance value.

[0127] This is to enable the first BJT transistor Q 2,3 emitter-base voltage V BE2,3 , with the second BJT transistor Q 3,3 emitter-base voltage V BE3,3 pressure difference V BE2,3 -V BE3,3 The first resistance R remains unchanged. 4,3 The voltage drop across is still 4V. T lnN. Due to the second BJT transistor Q 3,3 Second stacked BJT transistor Q 3s,3 The doubling of the branch current, the first resistor R 4,3 The resistor R in the current-multiplexed bandgap reference voltage generation circuit is no longer a single current multiplexer. 4,1 Instead of four times, it is twice as large, resulting in a bandgap reference voltage V. BG voltage value V BG,3 for:

[0128]

[0129] in:

[0130] 3R 5,3 ≈R 3,1 +R 4,1 +2R 5,1 (twenty three)

[0131] V BG,3 This represents the bandgap reference voltage value of the improved four-times current multiplexed bandgap reference voltage generation circuit, V. BG1 This represents the bandgap reference voltage value of the current-multiplexed bandgap reference voltage generation circuit, V. T For thermal voltage, VBE3s,3 For the second stacked BJT transistor Q 3s,3 The emitter-base voltage, N, is determined by the first BJT transistor Q. 2,3 The area of ​​the second BJT transistor Q 3,3 The area ratio of 1:2N is obtained, V BE3,1 The BJT transistor Q in the single-current multiplexed bandgap reference voltage generation circuit 3,1 The emitter-base voltage.

[0132] The improved four-times multiplexing circuit noise small-signal diagram and Figure 8 Similarly, the noise power spectral density of the improved four-times current multiplexed bandgap reference voltage generation circuit, equivalent to the input of amplifier A3, can be obtained using the same analysis.

[0133] Among them, E eq,3 E represents the noise voltage spectral density equivalent to the input of amplifier A3 of the improved four-times current multiplexed bandgap reference voltage generation circuit. n,3 E represents the equivalent input noise voltage spectral density of amplifier A3 itself. R2,3 R represents the resistance of the first branch. 2,3 The noise voltage spectral density, E R3,3 Represents the resistance R of the second branch 3,3 The noise voltage spectral density, E R4,3 Represents the first resistor R 4,3 The noise voltage spectral density, I nd2,3 Indicates the first BJT transistor Q 2,3 The noise current spectral density, r d2,3 Indicates the first BJT transistor Q 2,3 Equivalent resistance, I nd2s,3 Indicates the first stacked BJT transistor Q 2s,3 The noise current spectral density, r d2s,3 Indicates the first stacked BJT transistor Q 2s,3 Equivalent resistance, I nd3,3 Indicates the second BJT transistor Q 3,3 The noise current spectral density, r d3,3 Indicates the second BJT transistor Q 3,3 Equivalent resistance, I nd3s,3 Indicates the second stacked BJT transistor Q 3s,3 The noise current spectral density, r d3s,3 Indicates the second stacked BJT transistor Q 3s,3 The equivalent resistance.

[0134] In the improved quadruple current multiplexed bandgap reference voltage generation circuit, the feedback coefficient from the input terminal of amplifier A3 to the output terminal of the improved quadruple current multiplexed bandgap reference voltage generation circuit is:

[0135]

[0136] Where F3 represents the feedback coefficient from the input of amplifier A3 to the output of the improved four-times current multiplexed bandgap reference voltage generation circuit, ΔV A,B ΔV represents the voltage drop between the first input terminal A and the second input terminal B of amplifier A3. A The voltage change at the first input terminal of amplifier A3 is represented by ΔV. B The voltage change at the second input terminal B of amplifier A3 is represented by ΔV. C express Figure 7 and Figure 8 Point C (i.e., the resistance R of the first branch) 2,3 Second branch resistor R 3,3 The voltage variable at the first terminal, ΔV BG r represents the bandgap reference voltage variable. d2,3 Indicates the first BJT transistor Q 2,3 The equivalent resistance, r d2s,3 Indicates the first stacked BJT transistor Q 2s,3 The equivalent resistance, r d3,3 Indicates the second BJT transistor Q 3,3 The equivalent resistance, r d3s,3 Indicates the second stacked BJT transistor Q 3s,3 The equivalent resistance.

[0137] With feedback coefficient F3, the noise power spectral density at the output of the improved four-times current multiplexed bandgap reference voltage generation circuit is:

[0138]

[0139] in, E represents the noise power spectral density at the output of the improved four-times current multiplexed bandgap reference voltage generation circuit. eq,3 F3 represents the noise voltage spectral density equivalent to the input of amplifier A3 in the improved four-times current multiplexed bandgap reference voltage generation circuit, and E represents the feedback coefficient from the input of amplifier A3 to the output of the improved four-times current multiplexed bandgap reference voltage generation circuit. R5,3 Indicates the second resistor R 5,3 The noise voltage spectral density, r d3s,3 Indicates the second stacked BJT transistor Q 3s,3 The equivalent resistance.

[0140] Substituting formulas (12) and (18) into formulas (19) and (20), we get:

[0141] F3≈2F2≈4F1(27)

[0142]

[0143] Where F3 represents the feedback coefficient from the input of amplifier A3 to the output of the improved four-times current multiplexed bandgap reference voltage generation circuit; F2 represents the feedback coefficient from the input of amplifier A2 to the output of the double-times current multiplexed bandgap reference voltage generation circuit; and F1 represents the feedback coefficient from the input of amplifier A1 to the output of the single-times current multiplexed bandgap reference voltage generation circuit. eq,3 E represents the noise voltage spectral density equivalent to the input of amplifier A3 of the improved four-times current multiplexed bandgap reference voltage generation circuit. eq,2 E represents the noise voltage spectral density equivalent to the input of amplifier A2 in the double-current multiplexed bandgap reference voltage generation circuit. eq,1 This represents the noise voltage spectral density of the current-multiplexed bandgap reference voltage generation circuit, which is equivalent to the input of amplifier A1.

[0144] The noise power spectral density of the improved four-times current multiplexed bandgap reference voltage generation circuit is compared with that of the one-times and two-times current multiplexed bandgap reference voltage generation circuits:

[0145]

[0146] in, This represents the noise power spectral density at the output of the improved four-times current multiplexed bandgap reference voltage generation circuit. This represents the noise power spectral density at the output of the double current multiplexed bandgap reference voltage generation circuit. This represents the noise power spectral density at the output of a current-multiplexed bandgap reference voltage generation circuit. Noise power spectral density refers to the noise power per unit frequency or unit bandwidth; E R5,3 Indicates the second resistor R 5,3 The noise voltage spectral density, E R5,2 Represents resistance R 5,2 The noise voltage spectral density, E R5,1 Represents resistance R 5,1The noise voltage spectral density; F3 represents the feedback coefficient from the input of amplifier A3 to the output of the improved four-times current multiplexed bandgap reference voltage generation circuit; F2 represents the feedback coefficient from the input of amplifier A2 to the output of the two-times current multiplexed bandgap reference voltage generation circuit; F1 represents the feedback coefficient from the input of amplifier A1 to the output of the one-times current multiplexed bandgap reference voltage generation circuit; E eq,3 E represents the noise voltage spectral density equivalent to the input of amplifier A3 of the improved four-times current multiplexed bandgap reference voltage generation circuit. eq,2 E represents the noise voltage spectral density equivalent to the input of amplifier A2 in the double-current multiplexed bandgap reference voltage generation circuit. eq,1 This represents the noise voltage spectral density of the current-multiplexed bandgap reference voltage generation circuit, which is equivalent to the input of amplifier A1.

[0147] Therefore, it can be seen that the noise power of the improved multiple current multiplexed bandgap reference voltage generation circuit is reduced by 2 times compared with the double current multiplexed bandgap reference voltage generation circuit, and by 8 times compared with the single current multiplexed bandgap reference voltage generation circuit, which has a very good noise suppression function.

[0148] In summary, the bandgap reference voltage generation circuit of this embodiment includes a voltage generation unit 1 and an amplifier 2. The voltage generation unit 1 is used to generate multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages, and to generate a bandgap reference voltage based on the multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages. The amplifier 2 is used to clamp the voltage generation unit 1.

[0149] By stacking more stacked BJT transistors (e.g., including a first stacked BJT transistor Q) in the bandgap reference voltage generation circuit 2s,3 The second stacked BJT transistor Q 3s,3 The third stacked BJT transistor Q 0s,3 The fourth stacked BJT transistor Q 1s,3 It can generate more sets of positive temperature coefficient voltages and negative temperature coefficient voltages, continuously increasing the current reuse multiple, effectively reducing the noise level without consuming more power or introducing additional noise suppression technology, and without needing to reduce noise through special processes or by adding noise suppression circuits or increasing power consumption.

[0150] Furthermore, the amplifier 2 and the reference branch in the voltage generation unit 1 of the bandgap reference voltage generation circuit in this embodiment of the present disclosure have a corresponding relationship. For example, the fourth BJT transistor Q 1,3 The fourth stacked BJT transistor Q 1s,3 The first BJT transistor Q2,3 First stacked BJT transistor Q 2s,3 Fourth resistor R 1,3 Fourth stacked resistor R 1s,3 It forms a structure similar to the first BJT transistor Q. 2,3 First stacked BJT transistor Q 2s,3 The second BJT transistor Q 3,3 The second stacked BJT transistor Q 3s,3 R 4,3 The structure is such that, because of this correspondence in the circuit, on the one hand, no additional bias circuit is needed, and on the other hand, current reuse can be cleverly achieved by changing amplifier 2, which further reduces the complexity of the circuit and is conducive to obtaining better bandgap reference noise performance with less power consumption.

[0151] As can be seen, the current-reused bandgap reference voltage generation circuit of this disclosure, as a low-noise reference voltage source with multiple current reuse, can reduce the noise of the reference voltage source through current reuse technology. In contrast, related technologies sacrifice significant power consumption or use special processes to achieve good noise performance. The current-reused bandgap reference voltage generation circuit of this disclosure achieves the lowest possible noise without introducing an additional noise suppression module and without consuming more power.

[0152] It is understood that the various method embodiments mentioned above in this disclosure can be combined with each other to form combined embodiments without violating the principle and logic. Due to space limitations, this disclosure will not elaborate further. Those skilled in the art will understand that in the above methods of specific implementation, the specific execution order of each step should be determined by its function and possible internal logic.

[0153] This disclosure also proposes an integrated circuit that includes a bandgap reference voltage generation circuit as described above.

[0154] This disclosure also proposes a chip comprising the integrated circuit described above.

[0155] This disclosure also proposes an electronic device comprising the chip described above.

[0156] Electronic devices can be provided as terminals, servers, or other forms of devices.

[0157] Figure 10 A block diagram of an electronic device according to an embodiment of the present disclosure is shown. For example, electronic device 1900 may be provided as a server or terminal device. (Refer to...) Figure 10The electronic device 1900 includes a processing component 1922, which further includes one or more processors, and memory resources represented by memory 1932 for storing instructions, such as application programs, that can be executed by the processing component 1922. The application programs stored in memory 1932 may include one or more modules, each corresponding to a set of instructions. Furthermore, the processing component 1922 is configured to execute instructions to perform the methods described above.

[0158] Electronic device 1900 may also include a power supply component 1926 configured to perform power management of electronic device 1900, a wired or wireless network interface 1950 configured to connect electronic device 1900 to a network, and an input / output interface 1958. Electronic device 1900 can operate on an operating system stored in memory 1932, such as Microsoft Server operating system (Windows Server). TM Apple's graphical user interface-based operating system (Mac OS X) TM ), a multi-user, multi-process computer operating system (Unix) TM Linux is a free and open-source Unix-like operating system. TM ), the open-source Unix-like operating system (FreeBSD) TM (or similar.)

[0159] In an exemplary embodiment, a non-volatile computer-readable storage medium is also provided, such as a memory 1932 including computer program instructions that can be executed by a processing component 1922 of an electronic device 1900 to perform the above-described method.

[0160] The description of the various embodiments above tends to emphasize the differences between the various embodiments. The similarities or similarities between them can be referred to, and for the sake of brevity, they will not be repeated here.

[0161] Those skilled in the art will understand that, in the above-described method of the specific implementation, the order in which each step is written does not imply a strict execution order and does not constitute any limitation on the implementation process. The specific execution order of each step should be determined by its function and possible internal logic.

[0162] If the technical solution of this application involves personal information, the product using this technical solution has clearly informed the user of the personal information processing rules and obtained the user's voluntary consent before processing the personal information. If the technical solution of this application involves sensitive personal information, the product using this technical solution has obtained the user's separate consent before processing the sensitive personal information, and also meets the requirement of "express consent". For example, at personal information collection devices such as cameras, clear and prominent signs are set up to inform users that they have entered the scope of personal information collection and that personal information will be collected. If an individual voluntarily enters the collection scope, it is deemed that they have agreed to the collection of their personal information; or on the personal information processing device, with clear signs / information informing users of the personal information processing rules, authorization is obtained from the individual through pop-up information or by asking the individual to upload their personal information; wherein, the personal information processing rules may include information such as the personal information processor, the purpose of personal information processing, the processing method, and the types of personal information processed.

[0163] The various embodiments of this disclosure have been described above. These descriptions are exemplary and not exhaustive, nor are they limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen to best explain the principles, practical application, or improvement of the technology in the market, or to enable others skilled in the art to understand the embodiments disclosed herein.

Claims

1. A bandgap reference voltage generation circuit, characterized in that, The circuit includes: A voltage generation unit is used to generate multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages, and to generate a bandgap reference voltage based on the multiple sets of positive temperature coefficient voltages and negative temperature coefficient voltages. An amplifier, connected to the voltage generating unit, is used to clamp the voltage of the voltage generating unit.

2. The circuit according to claim 1, characterized in that, The voltage generation unit includes a first MOS transistor, a zeroth BJT transistor, a first BJT transistor, a first stacked BJT transistor, a second BJT transistor, a second stacked BJT transistor, a first branch resistor, a second branch resistor, a first resistor, and a second resistor. Wherein, the source of the first MOS transistor is connected to the base of the zeroth BJT transistor, the gate of the first MOS transistor is connected to the output terminal of the amplifier, the drain of the first MOS transistor is connected to ground, the emitter of the zeroth BJT transistor is used to receive the power supply voltage, and the collector of the zeroth BJT transistor is connected to the first terminal of the first branch resistor and the first terminal of the second branch resistor. The second end of the first branch resistor is connected to the collector of the first BJT transistor, the base of the first BJT transistor, and the first input terminal of the amplifier. The emitter of the first BJT transistor is connected to the collector of the first stacked BJT transistor and the base of the first stacked BJT transistor. The second end of the second branch resistor is connected to the first end of the first resistor and the second input terminal of the amplifier. The second end of the first resistor is connected to the collector of the second BJT transistor and the base of the second BJT transistor. The emitter of the second BJT transistor is connected to the collector of the second stacked BJT transistor and the base of the second stacked BJT transistor. The emitter of the first stacked BJT transistor and the emitter of the second stacked BJT transistor are connected to the first terminal of the second resistor, and the second terminal of the second resistor is grounded.

3. The circuit according to claim 2, characterized in that, The amplifier includes a third BJT transistor, a third stacked BJT transistor, a fourth BJT transistor, a fourth stacked BJT transistor, a fifth BJT transistor, a sixth BJT transistor, a second MOS transistor, a third resistor, a third stacked resistor, a fourth resistor, a fourth stacked resistor, and a fifth resistor, wherein... The emitter of the fifth BJT transistor is connected to the emitter of the sixth BJT transistor to receive the power supply voltage. The bases of the fifth and sixth BJT transistors and the source of the second MOS transistor are interconnected. The drain of the second MOS transistor is connected to ground. The gate of the second MOS transistor, the collector of the fifth BJT transistor, and the collector of the third BJT transistor are interconnected. The collector of the sixth BJT transistor is connected to the collector of the fourth BJT transistor, serving as the output terminal of the amplifier. The base of the third BJT transistor serves as the second input terminal of the amplifier, and the emitter of the third BJT transistor is connected to the collector of the third stacked BJT transistor and the base of the third stacked BJT transistor. The base of the fourth BJT transistor serves as the first input terminal of the amplifier, and the emitter of the fourth BJT transistor is connected to the collector of the fourth stacked BJT transistor and the base of the fourth stacked BJT transistor. The emitter of the third stacked BJT transistor, the emitter of the fourth stacked BJT transistor, the first end of the third resistor, and the first end of the fourth resistor are connected together. The second end of the third resistor is connected to the first end of the third stacked resistor. The second end of the fourth resistor is connected to the first end of the fourth stacked resistor. The second end of the third stacked resistor, the second end of the fourth stacked resistor, and the first end of the fifth resistor are connected together. The second end of the fifth resistor is grounded.

4. The circuit according to claim 3, characterized in that, The area ratio of the first BJT transistor to the area of ​​the second BJT transistor is 1:N, the area ratio of the first stacked BJT transistor to the area of ​​the second stacked BJT transistor is 1:N, the area ratio of the third BJT transistor to the area of ​​the fourth BJT transistor is 1:N, and the area ratio of the third stacked BJT transistor to the area of ​​the fourth stacked BJT transistor is 1:N, where N is an integer.

5. The circuit according to claim 3, characterized in that, The area ratio of the first BJT transistor to the area of ​​the second BJT transistor is 1:2N, the area ratio of the first stacked BJT transistor to the area of ​​the second stacked BJT transistor is 1:2N, the area ratio of the third BJT transistor to the area of ​​the fourth BJT transistor is 1:N, and the area ratio of the third stacked BJT transistor to the area of ​​the fourth stacked BJT transistor is 1:N, where N is a positive integer.

6. The circuit according to any one of claims 3 to 5, characterized in that, The voltage drop across the first resistor is 4V. T lnN, where V T This represents thermal voltage.

7. The circuit according to any one of claims 3 to 5, characterized in that, The zeroth BJT transistor, the fifth BJT transistor, and the sixth BJT transistor are PNP type; The first BJT transistor, the first stacked BJT transistor, the second BJT transistor, the second stacked BJT transistor, the third BJT transistor, the third stacked BJT transistor, the fourth BJT transistor, and the fourth stacked BJT transistor are all NPN type.

8. An integrated circuit, characterized in that, The integrated circuit includes the bandgap reference voltage generation circuit according to any one of claims 1 to 7.

9. A chip, characterized in that, The chip includes the integrated circuit as described in claim 8.

10. An electronic device, characterized in that, The electronic device includes the chip as described in claim 9.

Images