An optoelectronic hybrid packaging structure for multi-quantum chip interconnection

Abstract

The present application relates to the field of quantum computing and microelectronic packaging technology, and more particularly to a photoelectric hybrid packaging structure for multi-quantum chip interconnection, which introduces a micro-nano vacuum thermal insulation zone between the photoelectric interconnection interlayer and the quantum computing layer, and uses low-thermal-conductivity flexible support columns for physical support, thereby constructing a stepwise temperature gradient from 4K to 10mK. Meanwhile, the superconducting interconnection structure in a zero-resistance state is embedded in the support column. The classical control layer in the first temperature zone is responsible for task scheduling. The photoelectric interconnection interlayer is provided with a waveguide network and an optical switch, and is integrated with a photoelectric conversion unit with a physical gap to realize critical optical coupling. The quantum computing layer in the second temperature zone is responsible for executing quantum operations. The micro-nano vacuum thermal insulation zone is arranged between the interlayer and the computing layer to isolate heat, and the superconducting interconnection structure penetrates the vacuum zone to realize lossless bidirectional transmission of microwave signals across the temperature zones in the superconducting state.

Description

Technical Field

[0001] This invention relates to the fields of quantum computing and microelectronic packaging technology, and in particular to a photoelectric hybrid packaging structure for interconnecting multiple quantum chips. Background Technology

[0002] In quantum computing systems, the multi-quantum chip interconnect packaging structure is a crucial foundation for achieving qubit scaling, control signal transmission, and measurement data feedback. Its thermal isolation capability, signal transmission stability, and abnormal node scheduling capability directly impact the operational reliability of the quantum computing system. Existing superconducting quantum computing chips typically operate in millikelvin-level cryogenic environments, while classical control circuits or signal generation devices often operate in relatively high-temperature regions. High-speed control signal transmission between these two systems is necessary while minimizing heat transfer along the interconnect path to the cryogenic quantum chip. Existing structures often employ coaxial cables, metal interconnects, fiber optic transmission, photoelectric conversion, or flip-chip interconnects for quantum chip control. However, during multi-quantum chip scaling, issues such as heat leakage, complex interconnect paths, difficulty in timely identification of localized temperature anomalies, and difficulty in quickly switching abnormal operating nodes persist. Therefore, there is an urgent need for a multi-quantum chip interconnect optoelectronic hybrid packaging structure that can simultaneously achieve cryogenic thermal isolation, optoelectronic hybrid interconnection, temperature anomaly identification, and quantum processing chip rescheduling capabilities.

[0003] Publication number CN111191790A discloses a quantum bit control device; it can be seen that the quantum bit control device mainly generates multiple optical control signals through a control signal generator, and transmits the optical control signals to a photodetector located in a lower temperature region, and then the photodetector converts them into electrical control signals to control the quantum chip, thereby reducing the heat transfer from the first temperature region to the second temperature region and supporting system expansion. However, this structure still has the following problems: On the one hand, it mainly focuses on replacing some traditional control circuits with optical signals to reduce heat conduction, without setting a micro-nano vacuum insulation zone between the optoelectronic interconnection intermediate layer and the quantum computing layer, and without realizing bidirectional low-loss transmission of microwave control commands and measurement data through the superconducting interconnection structure that penetrates the micro-nano vacuum insulation zone; on the other hand, the structure does not set up thermomechanical actuators for the temperature anomalies of the quantum processing chip, nor does it utilize the critical optical coupling deviation of the optoelectronic conversion unit relative to the wavelength division multiplexing optical waveguide network to generate back reflection light pressure. Therefore, it is difficult to determine whether the corresponding quantum processing chip is in a temperature change environment based on the matching relationship between the back reflection light pressure and the downlink control optical pulse signal, and further complete the hardware interrupt triggering, quantum processing chip reselection, temperature recovery time determination, and fidelity analysis. There is still room for improvement in high-density interconnection of multiple quantum chips and adaptive scheduling of abnormal working nodes. Summary of the Invention

[0004] To address this, the present invention provides a hybrid optoelectronic packaging structure for interconnecting multiple quantum chips, which overcomes the problems in the prior art where the inability to autonomously sense the ambient temperature of the quantum chip leads to computational errors and the inability to achieve self-healing of the computing power of multiple quantum chips.

[0005] To achieve the above objectives, the present invention provides a photoelectric hybrid packaging structure for multi-quantum chip interconnection, comprising: The classical control layer, located in the first temperature zone, includes a central classical control unit, which is used to resolve the quantum computing task into downlink control optical pulse signals for transmission through a wavelength division multiplexing optical waveguide network. An optoelectronic interconnection intermediary layer is communicatively connected to the classical control layer. The optoelectronic interconnection intermediary layer is provided with an optical switch matrix and a wavelength division multiplexing optical waveguide network, and is arrayed with several optoelectronic conversion units corresponding to the optical switch matrix. A gap is formed between the photoelectric conversion unit and the optical path coupling end face of the wavelength division multiplexing optical waveguide network, so that the downlink control optical pulse signal transmitted by the wavelength division multiplexing optical waveguide network can cross the gap and couple to the corresponding photoelectric conversion unit, thereby forming a critical optical coupling state between the photoelectric conversion unit and the wavelength division multiplexing optical waveguide network. The quantum computing layer, located in the second temperature zone, includes several independently configured quantum processing chips for parallel execution of quantum logic gate operations assigned by the classical control layer, and for transmitting measurement data of the quantum logic gate operations back to the classical control layer, wherein the temperature of the second temperature zone is lower than the temperature of the first temperature zone. A micro-nano vacuum thermal insulation region is horizontally positioned between the optoelectronic interconnection interposer layer and the quantum computing layer to provide thermal isolation for the quantum computing layer. A superconducting interconnect structure, which is arrayed and penetrates the micro-nano vacuum insulation region, has two ends that are electrically hard-connected to the photoelectric conversion unit and the quantum processing chip, respectively, for bidirectional transmission of microwave control commands and measurement data at superconducting temperature.

[0006] Furthermore, the optoelectronic interconnection interposer includes a silicon-based adapter board, and the silicon-based adapter board contains a three-dimensional optical waveguide array, an optical switch matrix for controlling the transmission path of the three-dimensional optical waveguide array, and a wavelength division multiplexing optical waveguide network disposed on the optical transmission path. The photoelectric conversion unit includes an electro-optic modulator and a photodetector, and the photoelectric conversion unit is integrated on the silicon-based adapter board through a photoelectric co-packaging process.

[0007] Furthermore, a thermomechanical actuator is disposed within the micro / nano vacuum insulation region, and the thermomechanical actuator is composed of two materials with different coefficients of thermal expansion. The first material has a coefficient of thermal expansion of 0.5×10^-6 / K to 1.5×10^-6 / K and is distributed on one side of the thermomechanical actuator. The second material has a coefficient of thermal expansion of 3.0×10^-6 / K to 5.0×10^-6 / K and is distributed on the other side of the thermomechanical actuator; The thermomechanical actuator is fixed to the corresponding quantum processing chip. The side of the thermomechanical actuator away from the quantum processing chip is fixedly connected to the corresponding photoelectric conversion unit. The photoelectric conversion unit is connected to the silicon-based adapter plate through a colloid. The colloid can generate elastic deformation under the action of external force.

[0008] Furthermore, the superconducting interconnect structure is disposed within the thermomechanical actuator so that during the process of the thermomechanical actuator undergoing mechanical bending deformation and triggering the optical path disconnection, the superconducting interconnect structure forms a flexible deformation along with the bending of the thermomechanical actuator to maintain the microwave electrical connection between the photoelectric conversion unit and the quantum processing chip. The superconducting interconnect structure is made of indium, niobium or titanium nitride superconducting materials to allow the second temperature region to enter the superconducting state to eliminate Joule heating.

[0009] Furthermore, the classical control layer, the optoelectronic interconnection intermediary layer, and the quantum computing layer form a three-dimensional heterogeneous integrated stacked structure in the vertical direction; The classical control layer is soldered to the upper surface of the optoelectronic interconnect interposer layer; Each of the quantum processing chips in the quantum computing layer is connected to the bottom of the superconducting interconnect structure, so that the stacked structure forms a stepped temperature gradient bridge stack that spans the first temperature zone to the second temperature zone. The classical control layer, the optoelectronic interconnect intermediary layer and the quantum computing layer are filled with a filling medium.

[0010] Furthermore, the classical control unit is also used to receive the back-reflected light pressure in the wavelength division multiplexing optical waveguide network, and determine whether the corresponding quantum processing chip is in a temperature-changing environment based on the back-reflected light pressure, so as to determine whether the working node triggers a hardware interrupt.

[0011] Furthermore, the central classical control unit determines whether the corresponding quantum processing chip is in a temperature-changing environment based on the matching relationship between the back-reflected light pressure and the corresponding downlink control light pulse signal.

[0012] Furthermore, the central classical control unit selects a quantum processing chip to execute the currently interrupted quantum logic gate operation based on the judgment result of the hardware interruption triggered by the working node.

[0013] Furthermore, the central classical control unit periodically sends downlink detection signals to the quantum processing chip that triggers a hardware interrupt, in order to determine the reheating time of the corresponding quantum processing chip based on the measurement data results transmitted back each time.

[0014] Furthermore, the central classical control unit performs fidelity analysis based on the measurement data transmitted in real time from the quantum processing chip without triggering a hardware interrupt.

[0015] Compared with existing technologies, the advantages of this invention lie in the fact that it introduces a micro-nano vacuum thermal insulation region between the optoelectronic interconnect interposer and the quantum computing layer, and uses low thermal conductivity flexible support pillars for physical support, thus constructing a stepped temperature gradient from 4K to 10mK. Simultaneously, a superconducting interconnect structure that has entered a zero-resistance state is embedded within the support pillars. This design completely eliminates the need for traditional high thermal conductivity metal coaxial cables, physically severing parasitic heat conduction channels and eliminating Joule heat dissipation. This significantly reduces the cooling load on the dilution refrigerator, providing an extremely stable, ultra-cold operating environment for the qubits and effectively extending the quantum decoherence time.

[0016] Furthermore, this invention employs a three-dimensional heterogeneous stacked architecture vertically integrating a classical control layer, an optoelectronic interconnection interposer layer, and a quantum computing layer. Through a through-silicon via (TSV) array, an internal optical waveguide network, and flip-chip bonding technology at the bottom, the previously complex horizontal planar connections are transformed into extremely short vertical interconnects. This not only significantly shortens the transmission path of microwave control commands and measurement data, and reduces signal attenuation and crosstalk, but also provides ample space margin for integrating tens of thousands of qubits within the extremely limited space of a cryostat, breaking through the hardware bottleneck for the large-scale expansion of quantum computing.

[0017] Furthermore, addressing the risk of localized thermal runaway in quantum chips, this invention innovatively utilizes a thermomechanical actuator composed of two materials with different coefficients of thermal expansion. When abnormal heat dissipation occurs in the quantum processing chip, the actuator spontaneously generates lateral mechanical bending based on its material properties, physically pulling the photoelectric conversion unit out of the critical optical coupling state. This instantly blocks the optical path of the downlink optical pulse without relying on an external power supply or complex mechanical structures. This prevents the spread of localized high temperatures to the entire system and avoids system-wide thermal avalanche.

[0018] Furthermore, addressing the monitoring challenges in extremely low-temperature environments, this invention cleverly utilizes the back-reflected light signal generated at the gap when the optical path is interrupted. The central classical control unit only needs a photoelectric pressure sensor integrated at the front end of the 4K temperature waveguide network to monitor the operating status of the underlying nodes in real time. This mechanism eliminates the need for any additional electrical sensors or monitoring circuits in the extremely low-temperature quantum computing layer, achieving zero-thermal-intrusion, non-destructive monitoring of the underlying nodes, greatly improving the accuracy of fault location and system reliability.

[0019] Furthermore, this invention integrates a controlled optical switch matrix within the optoelectronic interconnect intermediary layer and pre-defines physically idle redundant nodes. Once the central control unit determines a physical disconnection in a working node through back-reflected light pressure, it can trigger the optical switches to perform millisecond-level physical deflection, seamlessly redirecting subsequent computational instructions and optical flow to the redundant nodes. This dynamic routing and computing power reconfiguration directly at the underlying hardware link level enables the system to continue executing complex quantum algorithms even in the event of localized physical hardware damage, achieving truly high fault tolerance and system self-healing. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the overall structure and connection of an embodiment of the present invention; Figure 2 This is a partial enlarged view of an embodiment of the present invention; Figure 3 This is a partially enlarged view of the thermomechanical actuator in normal operating condition as shown in the example. Figure 4 This is a partial enlarged view of the fault state of the thermomechanical actuator in the embodiment.

[0021] In the diagram: 100, Classical control layer; 110, Central classical control unit; 200, Optoelectronic interconnection interposer layer; 210, Optical switch matrix; 220, Wavelength division multiplexing optical waveguide network; 230, Optoelectronic conversion unit; 300, Quantum computing layer; 310, Quantum processing chip; 400, Micro-nano vacuum thermal insulation zone; 410, Thermomechanical actuator; 500, Superconducting interconnection structure. Detailed Implementation

[0022] To make the objectives and advantages of the present invention clearer, the present invention will be further described below with reference to embodiments; it should be understood that the specific embodiments described herein are merely for explaining the present invention and are not intended to limit the present invention.

[0023] Preferred embodiments of the present invention will now be described with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are merely illustrative of the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.

[0024] It should be noted that in the description of this invention, the terms "upper", "lower", "left", "right", "inner", "outer", etc., which indicate directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings. This is only for the convenience of description and is not intended to indicate or imply that the device or element must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this invention.

[0025] Furthermore, it should be noted that, in the description of this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0026] Please see Figure 1 As shown, it is a schematic diagram of the overall structure connection of an embodiment of the present invention; the optoelectronic hybrid packaging structure for interconnecting multiple quantum chips in this embodiment is used to establish a low-heat-loss optoelectronic hybrid interconnection channel between multiple quantum chips, and to realize the identification and scheduling of working nodes when the quantum processing chip 310 experiences temperature abnormality.

[0027] Specifically, the optoelectronic hybrid packaging structure for multi-quantum chip interconnection includes a classical control layer 100, an optoelectronic interconnection interposer layer 200, a quantum computing layer 300, a micro-nano vacuum thermal insulation region 400, and a superconducting interconnection structure 500. The classical control layer 100, the optoelectronic interconnection interposer layer 200, and the quantum computing layer 300 are arranged sequentially along the longitudinal direction to form a three-dimensional heterogeneous integrated stack architecture spanning from the first temperature region to the second temperature region.

[0028] The classical control layer 100, located in the first temperature zone, is used for parsing, scheduling, and processing measurement data for quantum computing tasks. The optoelectronic interconnection intermediary layer 200 is disposed between the classical control layer 100 and the quantum computing layer 300, and is communicatively connected to the classical control layer 100. It is used to transmit downlink control optical pulse signals and uplink measurement signals between the classical control layer 100 and the quantum computing layer 300. The quantum computing layer 300, located in the second temperature zone, is used to perform quantum logic gate operations and transmit the measurement data generated by the quantum logic gate operations back to the classical control layer 100.

[0029] The micro / nano vacuum thermal insulation region 400 is disposed between the optoelectronic interconnection interposer layer 200 and the quantum computing layer 300, and is used to reduce heat transfer from the optoelectronic interconnection interposer layer 200 to the quantum computing layer 300. The superconducting interconnect structure 500 penetrates the micro / nano vacuum thermal insulation region 400 and connects between the optoelectronic interconnection interposer layer 200 and the quantum computing layer 300, and is used to realize bidirectional transmission of microwave control commands and measurement data at superconducting temperature.

[0030] Please see Figure 2-4As shown, in this embodiment, an optical switch matrix 210, a wavelength division multiplexing (WDM) optical waveguide network 220, and a photoelectric conversion unit 230 are disposed within the optoelectronic interconnection interposer layer 200. A plurality of quantum processing chips 310 are disposed within the quantum computing layer 300, and a thermomechanical actuator 410 is disposed within the micro-nano vacuum thermal insulation region 400. A gap is formed between the photoelectric conversion unit 230 and the WDM optical waveguide network 220 to achieve a critical optical coupling state under normal conditions. The thermomechanical actuator 410 is connected between the corresponding quantum processing chip 310 and the photoelectric conversion unit 230 to drive the photoelectric conversion unit 230 to change position when the corresponding quantum processing chip 310 is in a temperature-changing environment, thereby providing a structural basis for subsequent identification of the corresponding working node through back-reflected light pressure.

[0031] Specifically, the classical control layer 100, used for parsing, scheduling, and processing data for quantum computing tasks, includes a central classical control unit 110. The classical control layer 100 is located in the first temperature zone and is communicatively connected to the optoelectronic interconnection intermediary layer 200, enabling the central classical control unit 110 to convert quantum computing tasks into downlink control optical pulse signals and transmit control information to the quantum computing layer 300 via the optoelectronic interconnection intermediary layer 200.

[0032] The central classical control unit 110 is disposed within the classical control layer 100. It receives externally input quantum computing tasks and determines the corresponding quantum logic gate operation content based on the quantum computing tasks. The central classical control unit 110 generates downlink control optical pulse signals according to the quantum logic gate operation content, enabling the downlink control optical pulse signals to be transmitted via the wavelength division multiplexing optical waveguide network 220 to the corresponding photoelectric conversion unit 230, and further converted into microwave control commands for driving the quantum processing chip 310 to execute quantum logic gate operations.

[0033] The central classical control unit 110 is also used to receive back-reflected optical pressure within the wavelength division multiplexing (WDM) optical waveguide network 220. Specifically, when the critical optical coupling state between the photoelectric conversion unit 230 and the WDM optical waveguide network 220 deviates due to temperature variations, downlink control optical pulse signals that are not effectively coupled and received can form back-reflected optical pressure within the WDM optical waveguide network 220. The central classical control unit 110 determines whether the corresponding quantum processing chip 310 is in a temperature-varying environment based on the matching relationship between the back-reflected optical pressure and the corresponding downlink control optical pulse signal.

[0034] When the central classical control unit 110 determines that the corresponding quantum processing chip 310 is in a temperature-changing environment, the central classical control unit 110 determines that the corresponding working node has triggered a hardware interrupt, and selects another quantum processing chip 310 to execute the currently interrupted quantum logic gate operation based on the hardware interrupt determination result. Thus, when some quantum processing chips 310 experience temperature-changing anomalies, the current quantum logic gate operation can be transferred to a quantum processing chip 310 that has not triggered a hardware interrupt to continue execution.

[0035] The central classical control unit 110 is also used to periodically send downlink detection signals to the quantum processing chip 310 that triggers a hardware interrupt, and to determine the reheating time of the corresponding quantum processing chip 310 based on the measurement data results of each transmission. The central classical control unit 110 also performs fidelity analysis based on the measurement data transmitted back in real time by the quantum processing chip 310 that does not trigger a hardware interrupt, in order to evaluate the operation results of the rescheduled quantum logic gates.

[0036] Specifically, the optoelectronic interconnection interposer 200 is used to establish a hybrid optoelectronic interconnection channel between the classical control layer 100 and the quantum computing layer 300, and includes an optical switch matrix 210, a wavelength division multiplexing optical waveguide network 220, and an optoelectronic conversion unit 230. The optoelectronic interconnection interposer 200 is communicatively connected to the classical control layer 100 to receive downlink control optical pulse signals generated by the central classical control unit 110 and transmit the downlink control optical pulse signals to the corresponding optoelectronic conversion unit 230.

[0037] The wavelength division multiplexing (WDM) optical waveguide network 220 is disposed within the optoelectronic interconnect interposer layer 200. It is used to multiplex downlink control optical pulse signals of different wavelengths for transmission, and to transmit the downlink control optical pulse signals to the corresponding optical path positions according to the target quantum processing chip 310 corresponding to the downlink control optical pulse signals. The WDM optical waveguide network 220 and the optoelectronic conversion unit 230 are mechanically independent, with a gap between them to allow the downlink control optical pulse signals to cross the gap and couple to the optoelectronic conversion unit 230 under normal conditions.

[0038] The photoelectric conversion units 230 are arrayed within the photoelectric interconnect interposer layer 200 and are correspondingly arranged with the wavelength division multiplexing optical waveguide network 220. The photoelectric conversion units 230 are used to receive downlink control optical pulse signals crossing the gap and convert the downlink control optical pulse signals into microwave control commands; simultaneously, the photoelectric conversion units 230 are also used to receive microwave measurement data transmitted back from the quantum processing chip 310 via the superconducting interconnect structure 500, and convert the microwave measurement data into uplink optical signals before transmitting them back to the classical control layer 100.

[0039] The optical switch matrix 210 is disposed within the optoelectronic interconnect interposer layer 200 and cooperates with the wavelength division multiplexing optical waveguide network 220 to adjust the transmission path of the downlink control optical pulse signal within the wavelength division multiplexing optical waveguide network 220. When the central classical control unit 110 determines that the current working node triggers a hardware interrupt, the optical switch matrix 210 can change the transmission direction of the corresponding downlink control optical pulse signal according to the scheduling result of the central classical control unit 110, so that the subsequent downlink control optical pulse signal is transmitted to the reselected quantum processing chip 310.

[0040] In this embodiment, when the photoelectric conversion unit 230 and the wavelength division multiplexing optical waveguide network 220 maintain a critical optical coupling state, the downlink control optical pulse signal can be stably coupled to the photoelectric conversion unit 230; when the photoelectric conversion unit 230 undergoes lateral displacement due to the mechanical bending deformation of the thermomechanical actuator 410, the coupling state between the photoelectric conversion unit 230 and the wavelength division multiplexing optical waveguide network 220 deviates, and the downlink control optical pulse signal that is not effectively coupled and received forms a back reflection light pressure in the wavelength division multiplexing optical waveguide network 220, so that the central classical control unit 110 can determine whether the corresponding quantum processing chip 310 is in a temperature change environment.

[0041] Specifically, the quantum computing layer 300, which executes the quantum logic gate operations assigned by the classical control layer 100, includes several independently configured quantum processing chips 310, each forming its own low-temperature environment. The quantum computing layer 300 is located in a second temperature zone, and the temperature of this second temperature zone is lower than that of the first temperature zone where the classical control layer 100 is located, thus providing a low-temperature operating environment for the quantum processing chips 310. The specific ambient temperature of this low-temperature operating environment is determined based on the operating temperature of the selected quantum chip, and will not be elaborated upon here.

[0042] The quantum processing chips 310 are arrayed within the quantum computing layer 300. Each quantum processing chip 310 is connected to a corresponding superconducting interconnect structure 500 to receive microwave control commands converted by the photoelectric conversion unit 230 via the superconducting interconnect structure 500. The quantum processing chip 310 executes corresponding quantum logic gate operations according to the microwave control commands and generates measurement data after completing the quantum logic gate operations. The specific type of quantum chip can be set according to the specific application scenario, and will not be elaborated here.

[0043] The measurement data generated by the quantum processing chip 310 is transmitted back to the photoelectric conversion unit 230 via the corresponding superconducting interconnect structure 500, and then converted into an uplink optical signal by the photoelectric conversion unit 230 and transmitted back to the classical control layer 100 for data processing and fidelity analysis by the central classical control unit 110.

[0044] In this embodiment, if a quantum processing chip 310 in operation triggers a hardware interruption due to temperature changes, the central classical control unit 110 can, based on the hardware interruption determination result, reselect a quantum processing chip 310 from those that did not trigger a hardware interruption to execute the quantum logic gate operation for the current interruption. Therefore, even when some quantum processing chips 310 are in an abnormal temperature state, the corresponding quantum computing tasks can still be continued by the other quantum processing chips 310.

[0045] Specifically, the quantum processing chip 310 that triggers a hardware interrupt does not immediately continue to participate in the current quantum logic gate operation as a normal working node. Instead, the central classical control unit 110 periodically sends downlink detection signals and determines its reheating time based on the measurement data results of each transmission. The quantum processing chip 310 that does not trigger a hardware interrupt continues to transmit measurement data in real time for the central classical control unit 110 to perform fidelity analysis.

[0046] Specifically, the micro-nano vacuum insulation region 400 is used to isolate heat transfer between the optoelectronic interconnection interposer layer 200 and the quantum computing layer 300, and is located between the two layers. The micro-nano vacuum insulation region 400 can reduce the heat transferred from the optoelectronic interconnection interposer layer 200 to the quantum computing layer 300, thereby maintaining the quantum processing chip 310 in a low-temperature operating environment. In this embodiment, the specific shape of the micro-nano vacuum insulation region is not limited, as long as it can provide vacuum insulation. Preferably, it consists of a shell formed by a high-insulation-rate medium and a vacuum cavity.

[0047] Please continue reading. Figure 3As shown, a thermomechanical actuator 410 is disposed within the micro-nano vacuum insulation zone 400. Specifically, the thermomechanical actuator 410 supports the corresponding photoelectric conversion unit 230 and undergoes mechanical bending deformation when the corresponding quantum processing chip 310 is in a temperature-changing environment. The thermomechanical actuator 410 is constructed of two materials with different coefficients of thermal expansion, determined according to the standard operating temperature and maximum operating temperature of the quantum chip, so that the thermomechanical actuator does not produce mechanical bending deformation that would block communication conduction when it senses that the ambient temperature of the quantum chip has reached or exceeded the maximum operating temperature. Preferably, the coefficient of thermal expansion of the first material is 0.5×10^-6 / K to 1.5×10^-6 / K, distributed on one side of the thermomechanical actuator 410; the coefficient of thermal expansion of the second material is 3.0×10^-6 / K to 5.0×10^-6 / K, distributed on the other side of the thermomechanical actuator 410.

[0048] One end of the thermomechanical actuator 410 is fixed to the corresponding quantum processing chip 310, and the other end is connected to the corresponding photoelectric conversion unit 230 via gap communication. When the quantum processing chip 310 experiences local temperature changes or heat dissipation resulting in temperature anomalies, the abnormal heat is conducted to the thermomechanical actuator 410. Due to the difference in thermal expansion coefficients of the materials on both sides of the thermomechanical actuator 410, the thermomechanical actuator 410 undergoes lateral mechanical bending deformation after being heated, which in turn causes the corresponding photoelectric conversion unit 230 to undergo lateral displacement.

[0049] In this embodiment, the superconducting interconnect structure 500 is used to transmit microwave control commands and measurement data between the photoelectric conversion unit 230 and the quantum processing chip 310. The superconducting interconnect structure 500 penetrates the micro / nano vacuum insulation region 400, and its two ends are electrically connected to the photoelectric conversion unit 230 and the quantum processing chip 310, respectively. The superconducting interconnect structure 500 is made of indium, niobium, or titanium nitride superconducting materials to enter a zero-resistance superconducting state in the second temperature region, thereby reducing Joule heating during microwave signal transmission.

[0050] In this embodiment, the superconducting interconnect structure 500 is disposed within the thermomechanical actuator 410. During the process where the thermomechanical actuator 410 undergoes mechanical bending deformation and causes the photoelectric conversion unit 230 to deviate from the critical optical coupling state, the superconducting interconnect structure 500 undergoes flexible deformation along with the thermomechanical actuator 410 to maintain the microwave electrical connection between the photoelectric conversion unit 230 and the quantum processing chip 310. Therefore, even when the corresponding optical path is physically disconnected, the electrical transmission basis between the quantum processing chip 310 and the photoelectric conversion unit 230 can still be preserved, facilitating subsequent detection and state determination.

[0051] Under normal operating conditions, the central classical control unit 110 generates a downlink control optical pulse signal according to the quantum computing task and sends the downlink control optical pulse signal to the optoelectronic interconnection interposer layer 200. After entering the wavelength division multiplexing optical waveguide network 220, the downlink control optical pulse signal is directionally transmitted by the wavelength division multiplexing optical waveguide network 220 to the optoelectronic conversion unit 230 corresponding to the corresponding quantum chip according to the corresponding transmission path.

[0052] The wavelength division multiplexing optical waveguide network 220 and the photoelectric conversion unit 230 maintain a critical optical coupling state under normal conditions, allowing the downlink control optical pulse signal to cross the gap between them and couple to the corresponding photoelectric conversion unit 230. After receiving the downlink control optical pulse signal, the photoelectric conversion unit 230 converts it into microwave control commands.

[0053] The microwave control commands are transmitted to the corresponding quantum processing chip 310 via the superconducting interconnect structure 500. Since the superconducting interconnect structure 500 enters a zero-resistance superconducting state in the second temperature region, it can reduce Joule heat loss during the transmission of microwave control commands and reduce the impact of signal transmission on the low-temperature environment of the quantum computing layer 300.

[0054] After receiving the microwave control command, the quantum processing chip 310 executes the corresponding quantum logic gate operation and generates measurement data upon completion. The measurement data is transmitted back to the corresponding photoelectric conversion unit 230 via the superconducting interconnect structure 500. The photoelectric conversion unit 230 converts the measurement data into an uplink optical signal and transmits it back to the classical control layer 100 via the photoelectric interconnect interposer layer 200.

[0055] After receiving the measurement data corresponding to the uplink optical signal, the central classical control unit 110 processes the measurement data to perform fidelity analysis, task scheduling, and determination of the working status of each quantum processing chip 310.

[0056] In an abnormal operating state, when a local temperature change or heat dissipation anomaly occurs in one of the quantum processing chips 310 at a working node, the abnormal heat generated by the quantum processing chip 310 is conducted along the thermomechanical actuator 410. Since the thermomechanical actuator 410 is constructed of two materials with different coefficients of thermal expansion, the thermomechanical actuator 410 undergoes lateral mechanical bending deformation after being heated.

[0057] After the thermomechanical actuator 410 generates lateral mechanical bending deformation, it causes the photoelectric conversion unit 230 connected to it to undergo lateral displacement, changing the relative position between the photoelectric conversion unit 230 and the wavelength division multiplexing optical waveguide network 220. At this time, the critical optical coupling state originally formed between the photoelectric conversion unit 230 and the wavelength division multiplexing optical waveguide network 220 is disrupted, making it difficult for the downlink control optical pulse signal to continue to be stably coupled to the corresponding photoelectric conversion unit 230.

[0058] When the photoelectric conversion unit 230 deviates from the critical optical coupling state, the wavelength division multiplexing optical waveguide network 220 is used to make the downlink control optical pulse signal that is not effectively coupled and received by the photoelectric conversion unit 230 form a back reflection light pressure in the wavelength division multiplexing optical waveguide network 220.

[0059] The central classical control unit 110 is used to establish the correspondence between the downlink control optical pulse signal, the corresponding transmission path within the wavelength division multiplexing optical waveguide network 220, the photoelectric conversion unit 230, and the quantum processing chip 310 when generating the downlink control optical pulse signal. Thus, each downlink control optical pulse signal corresponds to a target quantum processing chip 310 and the photoelectric conversion unit 230 corresponding to that target quantum processing chip 310.

[0060] The central classical control unit 110 is also used to receive the back-reflected optical pressure generated in the wavelength division multiplexing optical waveguide network 220 and match the back-reflected optical pressure with the transmitted downlink control optical pulse signal.

[0061] Specifically, when the central classical control unit 110 sends a downlink control optical pulse signal to the target quantum processing chip 310, if the transmission path in the wavelength division multiplexing optical waveguide network 220 corresponding to the downlink control optical pulse signal generates back reflection optical pressure, the central classical control unit 110 determines that the critical optical coupling state between the photoelectric conversion unit 230 corresponding to the transmission path and the wavelength division multiplexing optical waveguide network 220 has deviated.

[0062] In this embodiment, the central classical control unit 110 also stores backlight pressure determination conditions for judging whether the intensity of the backlight reflection light pressure has reached the optical coupling state deviation. The specific backlight pressure determination conditions can be determined based on the downlink control light pulse signal intensity and the backlight reflection light pressure intensity formed by the thermal deformation of the thermal actuator.

[0063] The central classical control unit 110 is also used to determine the quantum processing chip 310 connected to the photoelectric conversion unit 230 based on the photoelectric conversion unit 230 that has deviated from the critical optical coupling state. Since the photoelectric conversion unit 230 is fixedly connected to the side of the thermomechanical actuator 410 away from the quantum processing chip 310, and the thermomechanical actuator 410 is fixedly connected to the corresponding quantum processing chip 310, when the photoelectric conversion unit 230 deviates relative to the wavelength division multiplexing optical waveguide network 220, the central classical control unit 110 determines that the corresponding quantum processing chip 310 is in a temperature change environment based on the back reflection light pressure corresponding to the deviance.

[0064] When the central classical control unit 110 determines that the corresponding quantum processing chip 310 is in a temperature-changing environment, the central classical control unit 110 identifies the working node where the quantum processing chip 310 is located as an abnormal working node and determines that the working node has triggered a hardware interrupt. Based on the hardware interrupt determination result, the central classical control unit 110 stops sending downlink control optical pulse signals for executing the current quantum logic gate operation to the quantum processing chip 310 corresponding to the working node, so that the quantum processing chip 310 in the temperature-changing environment no longer receives the microwave control command corresponding to the current quantum logic gate operation.

[0065] In this embodiment, the central classical control unit 110 is further configured to retain the task information corresponding to the current quantum logic gate operation, and determine the target quantum processing chip to take over the execution of the current quantum logic gate operation based on the working state of the quantum processing chip 310 that has not triggered a hardware interrupt. The central classical control unit 110 is also configured to determine the photoelectric conversion unit 230 corresponding to the target quantum processing chip and the target transmission path within the wavelength division multiplexing optical waveguide network 220 based on the target quantum processing chip.

[0066] The central classical control unit 110 is also used to send path switching commands to the optical switch matrix 210. The optical switch matrix 210 is used to adjust the target transmission path of the downlink control optical pulse signal in the wavelength division multiplexing optical waveguide network 220 according to the path switching command, so that the transmission path of the quantum processing chip that originally triggered the hardware interrupt is avoided, and the subsequent downlink control optical pulse signal is transmitted to the photoelectric conversion unit 230 corresponding to the target quantum processing chip.

[0067] The photoelectric conversion unit 230 receives the downlink control optical pulse signal after path switching and converts it into microwave control commands. The target quantum processing chip receives the microwave control commands through the corresponding superconducting interconnect structure 500 and takes over the quantum logic gate operations of the currently interrupted quantum processing chip 310 that triggered the hardware interrupt.

[0068] After completing the current quantum logic gate operation, the target quantum processing chip also generates measurement data and transmits the measurement data back to the photoelectric conversion unit 230 via the superconducting interconnect structure 500. The photoelectric conversion unit 230 converts the measurement data and transmits it back to the classical control layer 100 for data processing by the central classical control unit 110.

[0069] For the quantum processing chip 310 that triggers a hardware interrupt, the central classical control unit 110 also periodically sends downlink detection signals. The downlink detection signals are transmitted to the corresponding quantum processing chip 310 via the wavelength division multiplexing optical waveguide network 220, the photoelectric conversion unit 230, and the superconducting interconnect structure 500. Based on the measurement data returned for each downlink detection signal, the central classical control unit 110 determines whether the temperature change state of the quantum processing chip 310 has recovered, and determines the corresponding temperature recovery time based on the time elapsed from the occurrence of the hardware interrupt to the resumption of task processing.

[0070] During the rescheduled computation process, the central classical control unit 110 performs fidelity analysis based on the measurement data transmitted in real time from the quantum processing chip 310, which has not triggered a hardware interrupt. Through this fidelity analysis, the central classical control unit 110 can determine whether the reselected quantum processing chip 310 meets the execution requirements of the current quantum logic gate operation, thereby improving the task continuity and operational reliability of the multi-quantum chip interconnect package structure under abnormal temperature conditions.

[0071] The technical solution of the present invention has been described above with reference to the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of the present invention is obviously not limited to these specific embodiments. Without departing from the principles of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will all fall within the scope of protection of the present invention.

Claims

1. A hybrid optoelectronic packaging structure for multi-quantum chip interconnection, characterized in that, include: The classical control layer, located in the first temperature zone, includes a central classical control unit, which is used to resolve the quantum computing task into downlink control optical pulse signals for transmission through a wavelength division multiplexing optical waveguide network. An optoelectronic interconnection intermediary layer is communicatively connected to the classical control layer. The optoelectronic interconnection intermediary layer is provided with an optical switch matrix and a wavelength division multiplexing optical waveguide network, and is arrayed with several optoelectronic conversion units corresponding to the optical switch matrix. A gap is formed between the photoelectric conversion unit and the optical path coupling end face of the wavelength division multiplexing optical waveguide network, so that the downlink control optical pulse signal transmitted by the wavelength division multiplexing optical waveguide network can cross the gap and couple to the corresponding photoelectric conversion unit, thereby forming a critical optical coupling state between the photoelectric conversion unit and the wavelength division multiplexing optical waveguide network. The quantum computing layer, located in the second temperature zone, includes several independently configured quantum processing chips for parallel execution of quantum logic gate operations assigned by the classical control layer, and for transmitting measurement data of the quantum logic gate operations back to the classical control layer, wherein the temperature of the second temperature zone is lower than the temperature of the first temperature zone. A micro-nano vacuum thermal insulation region is horizontally positioned between the optoelectronic interconnection interposer layer and the quantum computing layer to provide thermal isolation for the quantum computing layer. A superconducting interconnect structure, which is arrayed and penetrates the micro-nano vacuum insulation region, has two ends that are electrically hard-connected to the photoelectric conversion unit and the quantum processing chip, respectively, for bidirectional transmission of microwave control commands and measurement data at superconducting temperature.

2. The optoelectronic hybrid packaging structure for multi-quantum chip interconnection according to claim 1, characterized in that, The optoelectronic interconnection interposer includes a silicon-based adapter board, which contains a three-dimensional optical waveguide array, an optical switch matrix that controls the transmission path of the three-dimensional optical waveguide array, and a wavelength division multiplexing optical waveguide network disposed on the optical transmission path. The photoelectric conversion unit includes an electro-optic modulator and a photodetector, and the photoelectric conversion unit is integrated on the silicon-based adapter board through a photoelectric co-packaging process.

3. The optoelectronic hybrid packaging structure for multi-quantum chip interconnection according to claim 2, characterized in that, A thermomechanical actuator is installed within the micro-nano vacuum insulation region. The thermomechanical actuator is composed of two materials with different coefficients of thermal expansion. The first material has a coefficient of thermal expansion of 0.5×10^-6 / K to 1.5×10^-6 / K and is distributed on one side of the thermomechanical actuator. The second material has a coefficient of thermal expansion of 3.0×10^-6 / K to 5.0×10^-6 / K and is distributed on the other side of the thermomechanical actuator; The thermomechanical actuator is fixed to the corresponding quantum processing chip. The side of the thermomechanical actuator away from the quantum processing chip is fixedly connected to the corresponding photoelectric conversion unit. The photoelectric conversion unit is connected to the silicon-based adapter plate through a colloid. The colloid can generate elastic deformation under the action of external force.

4. The optoelectronic hybrid packaging structure for multi-quantum chip interconnection according to claim 3, characterized in that, The superconducting interconnect structure is disposed within the thermomechanical actuator so that during the process of the thermomechanical actuator undergoing mechanical bending deformation and causing the optical path to be disconnected, the superconducting interconnect structure forms a flexible deformation along with the bending of the thermomechanical actuator to maintain the microwave electrical connection between the photoelectric conversion unit and the quantum processing chip. The superconducting interconnect structure is made of indium, niobium or titanium nitride superconducting materials to allow the second temperature region to enter the superconducting state to eliminate Joule heating.

5. The optoelectronic hybrid packaging structure for multi-quantum chip interconnection according to claim 1, characterized in that, The classical control layer, the optoelectronic interconnection intermediary layer, and the quantum computing layer form a three-dimensional heterogeneous integrated stacked structure in the vertical direction; The classical control layer is soldered to the upper surface of the optoelectronic interconnect interposer layer; Each of the quantum processing chips in the quantum computing layer is connected to the bottom of the superconducting interconnect structure, so that the stacked structure forms a stepped temperature gradient bridge stack that spans the first temperature zone to the second temperature zone. The classical control layer, the optoelectronic interconnect intermediary layer and the quantum computing layer are filled with a filling medium.

6. The optoelectronic hybrid packaging structure for multi-quantum chip interconnection according to claim 5, characterized in that, The classical control unit is also used to receive the back-reflected light pressure in the wavelength division multiplexing optical waveguide network, and determine whether the corresponding quantum processing chip is in a temperature-changing environment based on the back-reflected light pressure, so as to determine whether the working node triggers a hardware interrupt.

7. The optoelectronic hybrid packaging structure for multi-quantum chip interconnection according to claim 6, characterized in that, The central classical control unit determines whether the corresponding quantum processing chip is in a temperature-varying environment based on the matching relationship between the back-reflected light pressure and the corresponding downlink control light pulse signal.

8. The optoelectronic hybrid packaging structure for multi-quantum chip interconnection according to claim 7, characterized in that, The central classical control unit selects a new quantum processing chip to execute the quantum logic gate operation of the currently interrupted node based on the judgment result of the hardware interruption triggered by the working node.

9. The optoelectronic hybrid packaging structure for multi-quantum chip interconnection according to claim 8, characterized in that, The central classical control unit periodically sends downlink detection signals to the quantum processing chip that triggers a hardware interrupt, in order to determine the reheating time of the corresponding quantum processing chip based on the measurement data results transmitted back each time.

10. The optoelectronic hybrid packaging structure for multi-quantum chip interconnection according to claim 9, characterized in that, The central classical control unit performs fidelity analysis based on the measurement data transmitted in real time from the quantum processing chip without triggering a hardware interrupt.

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