Etching apparatus and array substrate

Abstract

The application discloses an etching device and an array substrate. The etching device comprises a preparation chamber, a plasma production unit and an induction electrode. The induction electrode divides the preparation chamber into a generation chamber and an etching chamber. The generation chamber is used for receiving an etching gas, and the etching chamber is used for carrying the array substrate. The plasma production unit is configured to convert the etching gas into plasma. The induction electrode comprises a plurality of guide holes. The guide holes are communicated between the generation chamber and the etching chamber. The induction electrode is configured to form the plasma into an ion beam and enter the etching chamber through the guide holes to etch the array substrate. The opening area of at least part of the guide holes near one end of the generation chamber is greater than the opening area of the guide holes near one end of the etching chamber. According to the embodiment of the application, the focusing degree of the ion beam can be improved, the scattering of the ion beam can be reduced, the uniformity of the ion beam in removing the wet etching by-products of the array substrate can be ensured, and the etching process performance of the etching device is improved.

Description

Technical Field

[0001] This application belongs to the field of display panel manufacturing technology, and particularly relates to an etching device and an array substrate. Background Technology

[0002] Organic light-emitting diode (OLED) and flat panel display devices based on light-emitting diode (LED) technologies are widely used in various consumer electronics products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body and wide range of applications, becoming the mainstream of display devices.

[0003] OLED display panels require an array substrate, including driving circuitry, to drive the light-emitting units to emit light. The array substrate comprises stacked semiconductor layers, conductive layers, and insulating layers, which need to be patterned to meet usage requirements. Improving etching process performance is crucial for increasing the yield of the array substrate. Summary of the Invention

[0004] This application provides an etching apparatus and an array substrate, the purpose of which is to improve the process performance of the etching process.

[0005] An embodiment of the first aspect of this application provides an etching apparatus for fabricating an array substrate for a display panel, the etching apparatus comprising:

[0006] The fabrication chamber includes a generation chamber and an etching chamber arranged sequentially along a first direction. The generation chamber is used to receive etching gas, and the etching chamber is used to support the array substrate.

[0007] A plasma production unit is configured to convert the etching gas into plasma;

[0008] A sensing electrode is located within the fabrication chamber, dividing the fabrication chamber into a generation chamber and an etching chamber. The sensing electrode includes a plurality of guide holes that connect the generation chamber and the etching chamber. The sensing electrode is configured to form an ion beam from the plasma and guide it through the guide holes into the etching chamber to etch the array substrate. At least a portion of the opening area of ​​at least one guide hole near the generation chamber is larger than the opening area of ​​the guide hole near the etching chamber.

[0009] According to an embodiment of the first aspect of this application, the radial dimension of the guide hole gradually decreases in the direction from the generation chamber to the etching chamber.

[0010] According to any of the foregoing embodiments of the first aspect of this application, the sensing electrode includes a first region and a second region, both the first region and the second region include the guide hole, wherein the opening area of ​​the guide hole in the first region near the end of the generating chamber is greater than the opening area of ​​the guide hole in the second region near the end of the generating chamber.

[0011] According to any of the foregoing embodiments of the first aspect of this application, the opening area of ​​the guide hole in the first region near the etching chamber is greater than or less than the opening area of ​​the guide hole in the second region near the etching chamber.

[0012] According to any of the foregoing embodiments of the first aspect of this application, the second region is disposed around the first region.

[0013] According to any of the foregoing embodiments of the first aspect of this application, the guide hole includes a first segment hole structure and a second segment hole structure that are interconnected, the first segment hole structure being located on the side of the second segment hole structure closer to the generating chamber, and at least a portion of the radial dimension of the first segment hole structure being larger than the radial dimension of the second segment hole structure.

[0014] According to any of the foregoing embodiments of the first aspect of this application, in the direction from the generation chamber to the etching chamber, the radial dimension of at least one of the first segment hole structure and the second segment hole structure gradually decreases.

[0015] According to any of the foregoing embodiments of the first aspect of this application, the shape of the first cross section of at least one of the first hole structure and the second hole structure is rectangular, and the first cross section passes through the central axis of the guide hole.

[0016] According to any of the foregoing embodiments of the first aspect of this application, the sensing electrode includes a first sub-electrode and a second sub-electrode, the first sub-electrode being located on the side of the second sub-electrode facing the generation chamber, and the guide hole including a first sub-guide hole located on the first sub-electrode and a second sub-guide hole located on the second sub-electrode, the first sub-guide hole and the second sub-guide hole being in communication;

[0017] Wherein, at least a portion of the radial dimension of the first sub-guide hole is greater than the radial dimension of the second sub-guide hole.

[0018] According to any of the foregoing embodiments of the first aspect of this application, the dimension of the first sub-guide hole along the first direction is smaller than the dimension of the second sub-guide hole along the first direction.

[0019] According to any of the foregoing embodiments of the first aspect of this application, the first sub-electrode further includes a first limiting portion, the first limiting portion enclosing and forming a plurality of first sub-guide holes, the first limiting portion including a first sidewall facing the first sub-guide holes; the second sub-electrode further includes a second limiting portion, the second limiting portion enclosing and forming a plurality of second sub-guide holes, the second limiting portion including a second sidewall facing the second sub-guide holes.

[0020] Wherein, the angle between the first sidewall and the first plane is less than or equal to the angle between the second sidewall and the first plane, and the first plane is perpendicular to the first direction.

[0021] According to any of the foregoing embodiments of the first aspect of this application, the included angle between the first sidewall and the first plane is smaller than the included angle between the second sidewall and the first plane, and the dimension of the first sub-guide hole along the first direction is equal to the dimension of the second sub-guide hole along the first direction.

[0022] According to any of the foregoing embodiments of the first aspect of this application, the first sub-electrode further includes a first limiting portion, which encloses and forms a plurality of first sub-guide holes; the second sub-electrode further includes a second limiting portion, which encloses and forms a plurality of second sub-guide holes;

[0023] Wherein, the dimension of the first limiting part along the second direction is smaller than the dimension of the second limiting part along the second direction, and the second direction is parallel to the direction in which the first limiting part and the first sub-guide hole are arranged side by side.

[0024] According to any of the foregoing embodiments of the first aspect of this application, an electrostatic lens layer is provided between the first sub-electrode and the second sub-electrode. The electrostatic lens layer includes a positive electrode layer and a negative electrode layer disposed sequentially along a first direction. The positive electrode layer includes a positive electrode hole communicating with the guide hole, and the negative electrode layer includes a negative electrode hole communicating with the guide hole.

[0025] According to any of the foregoing embodiments of the first aspect of this application, the negative electrode layer is located on the side of the positive electrode layer facing the generation chamber, the negative electrode hole is connected to the first sub-guide hole, and the positive electrode hole is connected to the second sub-guide hole.

[0026] According to any of the foregoing embodiments of the first aspect of this application, the etching apparatus further includes a carrier located within the etching chamber, the carrier including a receiving space for containing an etching solution.

[0027] According to any of the foregoing embodiments of the first aspect of this application, the carrier is grounded.

[0028] According to any of the foregoing embodiments of the first aspect of this application, the sensing electrode is electrically connected to a DC power supply having a first polarity, and the accommodating space is used to accommodate ions of a second polarity.

[0029] According to any of the foregoing embodiments of the first aspect of this application, the plasma production unit includes a radio frequency electrode for converting the etching gas into plasma.

[0030] According to any of the foregoing embodiments of the first aspect of this application, the etching chamber includes an exhaust port located on the side of the etching chamber away from the sensing electrode.

[0031] According to any of the foregoing embodiments of the first aspect of this application, the etching chamber further includes an air inlet located on the side of the etching chamber near the sensing electrode.

[0032] An embodiment of the second aspect of this application also provides an array substrate for a display panel, the array substrate being formed by an etching apparatus as described in any of the preceding claims.

[0033] In the etching apparatus provided in the first aspect of this application, an inductive electrode divides the preparation chamber into a generation chamber and an etching chamber. An array substrate is placed in the etching chamber, where chemical etching is performed. A plasma production unit is located in the generation chamber to produce plasma, achieving isolation and synergy between dry and wet etching. A guide hole connects to both the generation and etching chambers. An electric field is applied through the inductive electrode to form an ion beam from the plasma and guide and accelerate the ion beam into the etching chamber to react with the insoluble byproducts generated by the chemical etching. The reaction converts insoluble byproducts into soluble liquids or volatile gases. At least a portion of the guide hole has an opening area at the end near the generation chamber that is larger than the opening area at the end near the etching chamber. This improves the focusing of the ion beam exiting the guide hole, effectively reduces ion beam scattering, enhances ion beam collimation, ensures that the degree of reaction between the ion beam and wet etching byproducts at various locations on the wafer of the array substrate is consistent, ensures the uniformity of wet etching byproduct removal at various locations on the wafer by the ion beam, avoids the residue of insoluble byproducts, and improves the etching process performance of the etching equipment. Attached Figure Description

[0034] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0035] Figure 1 This is a schematic diagram of the structure of an etching device according to an embodiment of this application;

[0036] Figure 2 This is a top view of a sensing electrode according to an embodiment of this application;

[0037] Figure 3 This is a partial structural schematic diagram of a sensing electrode according to another embodiment of this application;

[0038] Figure 4 This is a partial structural schematic diagram of an induction electrode according to another embodiment of this application.

[0039] Explanation of reference numerals in the attached figures:

[0040] 1. Preparation chamber; 11. Formation chamber; 12. Etching chamber; 2. Plasma production unit; 21. Radio frequency electrode; 22. Radio frequency power supply; 3. Sensing electrode; 31. Guide hole; 32. First sub-electrode; 321. First sub-guide hole; 33. Second sub-electrode; 331. Second sub-guide hole; 4. Carrier; 41. Accommodation space; 5. DC power supply; 100. Array substrate; 101. Etching gas; 102. Plasma. Detailed Implementation

[0041] The features and exemplary embodiments of various aspects of this application will now be described in detail. Numerous specific details are set forth in the following detailed description to provide a comprehensive understanding of this application. However, it will be apparent to those skilled in the art that this application can be implemented without requiring some of these specific details. The following description of embodiments is merely intended to provide a better understanding of this application by illustrating examples. In the accompanying drawings and the following description, at least some well-known structures and techniques are not shown to avoid unnecessarily obscuring the application; and, for clarity, the dimensions of some structures may be exaggerated. Furthermore, the features, structures, or characteristics described below can be combined in any suitable manner in one or more embodiments.

[0042] In the description of this application, it should be noted that, unless otherwise stated, "a plurality of" means two or more; the terms "upper," "lower," "left," "right," "inner," "outer," etc., indicating orientation or positional relationships are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0043] The directional terms appearing in the following description refer to the directions shown in the figures and are not intended to limit the specific structure of the embodiments of this application. It should also be noted in the description of this application that, unless otherwise explicitly specified and limited, the terms "installation" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0044] Organic light-emitting diode (OLED) and flat panel display devices based on light-emitting diode (LED) technologies are widely used in various consumer electronics products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body and wide range of applications, becoming the mainstream of display devices.

[0045] OLED display panels require an array substrate including driving circuitry to drive light-emitting units to emit light. The array substrate includes stacked semiconductor layers, conductive layers, and insulating layers. For example, the array substrate may include a substrate and a first conductive layer, a second conductive layer, and a third conductive layer stacked on one side of the substrate. An insulating layer is disposed between adjacent conductive layers. Exemplarily, a pixel circuit is disposed on the array substrate, and the pixel driving circuit includes transistors and storage capacitors. The transistor includes a semiconductor, a gate, a source, and a drain. The source and drain can be connected to the semiconductor via vias in the insulating layer. The storage capacitor includes a first electrode and a second electrode. As an example, the gate and the first electrode can be located in the first conductive layer, the second electrode can be located in the second conductive layer, and the source and drain can be located in the third conductive layer. Dry or wet etching processes may be used when fabricating the first conductive layer, the second conductive layer, the third conductive layer, the semiconductor, and the insulating layer vias. Improving the etching process performance is crucial for improving the yield of the array substrate.

[0046] In related technologies, some insoluble byproducts are generated during the etching process. These byproducts tend to accumulate on the etched surface, which may affect subsequent process steps or the quality of the etching.

[0047] To solve or improve the aforementioned technical problems, this application is proposed. Embodiments of this application provide an etching apparatus and an array substrate, which will be described below in conjunction with the accompanying drawings. Figure 1-4 Various embodiments of the etching equipment and array substrate will be described.

[0048] Please see Figure 1 , Figure 1 This is a schematic diagram of an etching device provided in an embodiment of this application.

[0049] like Figure 1 As shown, a first aspect embodiment of this application provides an etching apparatus for fabricating an array substrate 100 for a display panel. The etching apparatus includes:

[0050] The fabrication chamber 1 includes a generation chamber 11 and an etching chamber 12 arranged sequentially along a first direction. The generation chamber 11 is used to receive etching gas 101, and the etching chamber 12 is used to support the array substrate 100.

[0051] Plasma production unit 2 is configured to convert etching gas 101 into plasma 102.

[0052] A sensing electrode 3 is located within the fabrication chamber 1, dividing the fabrication chamber 1 into a generation chamber 11 and an etching chamber 12. The sensing electrode 3 includes a plurality of guide holes 31. The guide holes 31 connect the generation chamber 11 and the etching chamber 12. The sensing electrode 3 is configured to form an ion beam from plasma 102 and guide it through the guide holes 31 into the etching chamber 12 to etch the array substrate 100. At least a portion of the guide holes 31 have an opening area near the generation chamber 11 that is larger than the opening area near the etching chamber 12.

[0053] In this embodiment, the sensing electrode 3 divides the fabrication chamber 1 into a generation chamber 11 and an etching chamber 12. The array substrate 100 is placed in the etching chamber 12, and chemical etching is performed in the etching chamber 12. The plasma production unit 2 is located in the generation chamber 11 to produce plasma 102, achieving isolation and synergy between dry etching and wet etching. The guide hole 31 is connected to both the generation chamber 11 and the etching chamber 12. An electric field is applied through the sensing electrode 3 to form an ion beam from the plasma 102 and guide and accelerate the ion beam into the etching chamber 12 to react with the chemical solution. The insoluble byproducts generated during etching react with each other, thereby removing the insoluble byproducts. At least a portion of the guide hole 31 has an opening area closer to the generation chamber 11 that is larger than the opening area closer to the etching chamber 12. This improves the focusing of the ion beam exiting from the guide hole 31, enhances the collimation of the ion beam, reduces scattering, and ensures that the degree of reaction between the ion beam and the wet etching byproducts at various locations on the wafer of the array substrate 100 is consistent. This ensures the uniformity of the removal of wet etching byproducts at various locations on the wafer by the ion beam, avoids the residue of insoluble byproducts, and improves the etching process performance of the etching equipment.

[0054] It should be noted that the first direction refers to the vertical direction, that is... Figure 1 The direction the arrow points in. Specifically, as... Figure 1As shown, the sensing electrode 3 is horizontally mounted inside the preparation chamber 1, dividing the preparation chamber 1 into a generation chamber 11 and an etching chamber 12. The generation chamber 11 is located at the top of the preparation chamber 1, and the etching chamber 12 is located at the bottom of the preparation chamber 1. The sensing electrode 3 is provided with several guide holes 31, each of which communicates with both the generation chamber 11 and the etching chamber 12.

[0055] like Figure 1 As shown, the plasma production unit 2 is placed in the generation chamber 11. The generation chamber 11 is used to introduce etching gases 101, such as chlorine, hydrogen fluoride, fluorine, or hydrogen chloride (dry etching gases 101). These gases can be excited by plasma 102 to react with the surface material of the array substrate 100, thereby achieving the etching process. The use of different etching gases 101 depends on the material being etched and the required etching selectivity. The plasma production unit 2 excites the etching gases 101 in the generation chamber 11 into plasma 102. Optionally, the plasma production unit 2 can be a radio frequency plasma 102 production unit, a direct current plasma 102 production unit, an inductively coupled plasma 102 production unit, a microwave plasma 102 production unit, or a magnetron plasma 102 production unit, which are existing technologies and will not be described further in this embodiment.

[0056] Figure 2 The diagram shows a top view of the sensing electrode 3 according to an embodiment of this application. Optionally, the horizontal projection of the guide hole 31 is circular, but it can also be rectangular or irregular in shape. The shapes of the multiple guide holes 31 of the sensing electrode 3 can be the same or different. For example, the guide hole 31 located in the central region of the sensing electrode 3 is a circular hole, and the guide hole 31 located in the edge region of the sensing electrode 3 is a rectangular hole. Optionally, the multiple guide holes 31 are uniformly distributed on the sensing electrode 3, and the apertures of the multiple guide holes 31 are consistent or have small differences in aperture, to ensure the uniformity of the ion beam at various locations on the array substrate 100.

[0057] In this embodiment, the opening area of ​​at least one guide hole 31 near the generation chamber 11 is larger than the opening area near the etching chamber 12. That is, the aperture of the inlet end of the guide hole 31 is larger than the aperture of the outlet end. Compared with guide holes 31 with uniform apertures throughout the hole segment, the guide holes 31 in this embodiment can make the ion beam more focused and uniformly emitted to all parts of the array substrate 100, reduce ion beam scattering, optimize the flow path of the ion beam, ensure that the degree of reaction between the ion beam and the wet etching byproducts at all parts of the wafer on the array substrate 100 is consistent, avoid the residue of insoluble byproducts, and ensure the uniformity of the removal of wet etching byproducts at all parts of the array substrate 100 by the ion beam.

[0058] In some alternative embodiments, such as Figure 1As shown, in the direction from the generation chamber 11 to the etching chamber 12, the radial dimension of the guide hole 31 gradually decreases.

[0059] In these optional embodiments, the guide aperture 31 is located in the channel between the generation chamber 11 and the etching chamber 12. The entrance end of the guide aperture 31 communicates with the generation chamber 11, and the aperture diameter at the entrance end is relatively large. As the guide aperture 31 extends into the etching chamber 12, the aperture diameter of the guide aperture 31 gradually decreases, so as to effectively focus and accelerate the ion beam through the guide aperture 31. This allows the ion beam to be concentrated and directionally delivered to various parts of the wafer as it passes through the guide aperture 31, enhancing the collimation of the ion beam, ensuring the consistency of the reaction degree between the ion beam and the insoluble by-products at various parts of the wafer, while increasing the emission energy of the plasma 102, avoiding the diffusion or loss of plasma 102 energy, and further improving the control precision of the etching process.

[0060] Optionally, the guide hole 31 is in the shape of an inverted trapezoid or an inverted frustum.

[0061] In some optional embodiments, the sensing electrode 3 includes a first region and a second region. Both the first region and the second region include a guide hole 31. The opening area of ​​the guide hole 31 in the first region near the end of the generation chamber 11 is larger than the opening area of ​​the guide hole 31 in the second region near the end of the generation chamber 11, and the radial dimension of the guide hole 31 gradually decreases in the direction from the generation chamber 11 to the etching chamber 12.

[0062] In these optional embodiments, by dividing the guide holes 31 on the sensing electrode 3 into regions, the opening area of ​​the guide hole 31 in the first region near the end of the generation chamber 11 is larger than the opening area of ​​the guide hole 31 in the second region near the end of the generation chamber 11, and the aperture of the guide hole 31 gradually decreases from the inlet end to the outlet end, so as to ensure the focusing of the ion beam while guiding the ion beam more precisely, ensuring that the ion beam flows uniformly to all parts of the wafer, so that the insoluble by-products at all parts of the wafer can be converted into soluble liquids or volatile gases, avoiding the accumulation of by-products.

[0063] In some alternative embodiments, the opening area of ​​the guide hole 31 in the first region near the etching chamber 12 is greater than or less than the opening area of ​​the guide hole 31 in the second region near the etching chamber 12, and the radial dimension of the guide hole 31 gradually decreases in the direction from the generating chamber 11 to the etching chamber 12.

[0064] In these optional embodiments, the opening area of ​​the guide hole 31 in the first region near the etching chamber 12 is different from that in the second region, depending on the design requirements. All guide holes 31 gradually decrease in radial dimension in the direction from the generation chamber 11 to the etching chamber 12. Through this embodiment, the guide holes 31 in the first and second regions are designed differently to more accurately guide the ion beam, ensuring uniform flow of the ion beam to all parts of the wafer. This allows insoluble byproducts at all parts of the wafer to be converted into soluble liquids or volatile gases, preventing byproduct accumulation. Furthermore, the gradual reduction in the size of the guide holes 31 enables acceleration and focusing of the plasma 102, enhancing the collimation of the ion beam and thus improving the accuracy and efficiency of the etching process.

[0065] In some alternative embodiments, the radial dimension of the guide hole 31 gradually decreases in the direction from the generation chamber 11 to the etching chamber 12, and the second region is arranged around the first region to optimize the radial distribution of the ion beam and ensure that the ion beam flows uniformly to all parts of the wafer.

[0066] In some alternative embodiments, the guide hole 31 includes a first segment hole structure and a second segment hole structure that are in communication with each other. The first segment hole structure is located on the side of the second segment hole structure closer to the generation chamber 11. At least a portion of the radial dimension of the first segment hole structure is larger than the radial dimension of the second segment hole structure.

[0067] In these alternative embodiments, the first aperture structure has a larger aperture and is located near one end of the generation chamber 11, effectively guiding the plasma 102 from the generation chamber 11 and providing a wider channel for the ion beam to pass smoothly. The second aperture structure is located on the other side of the first aperture structure, near the etching chamber 12, and its radial dimension is smaller than that of the first aperture structure, forming a narrower channel. Thus, when the plasma 102 passes through the guide aperture 31, it first enters the larger aperture of the first aperture structure, thereby reducing initial energy loss and scattering; subsequently, when it enters the smaller aperture of the second aperture structure, the plasma 102 is further concentrated and accelerated, maintaining a high energy density during transmission and being more precisely guided to the etching chamber 12.

[0068] In some alternative embodiments, the radial dimension of at least one of the first and second hole structures gradually decreases in the direction from the generation chamber 11 to the etching chamber 12.

[0069] In these alternative embodiments, optionally, the aperture of the first segment of the hole structure remains consistent throughout, and the aperture of the first segment of the hole structure is larger than the aperture of the second segment of the hole structure. The radial dimension of the second segment of the hole structure gradually decreases at one end near the etching chamber 12. Alternatively, as... Figure 3As shown, the radial dimension of the first aperture structure is larger than that of the second aperture structure, and the radial dimensions of both the first and second aperture structures gradually decrease near the etching chamber 12. In this embodiment, the ion beam obtains a relatively spacious channel when passing through the first aperture structure, reducing energy loss and achieving initial guidance. As the fluid enters the second aperture structure, the aperture gradually narrows, allowing the ion beam to accelerate and concentrate, thereby enhancing its energy density and focusing, and optimizing the energy distribution of the ion beam.

[0070] In some alternative embodiments, the first cross section of at least one of the first hole structure and the second hole structure is rectangular in shape, and the first cross section passes through the central axis of the guide hole 31.

[0071] In these alternative embodiments, the first cross section of the first or second aperture structure is rectangular and passes through the center of the guide hole 31 to reduce the non-uniformity and scattering of the ion beam flow, which helps to control the directionality and focusing effect of the ion beam and further improve the efficiency and accuracy of the plasma 102 flow throughout the etching process.

[0072] In some alternative embodiments, such as Figure 3 As shown, the sensing electrode 3 includes a first sub-electrode 32 and a second sub-electrode 33. The first sub-electrode 32 is located on the side of the second sub-electrode 33 facing the generation chamber 11. The guide hole 31 includes a first sub-guide hole 321 located on the first sub-electrode 32 and a second sub-guide hole 331 located on the second sub-electrode 33. The first sub-guide hole 321 and the second sub-guide hole 331 are connected.

[0073] The radial dimension of at least a portion of the first sub-guide hole 321 is greater than the radial dimension of the second sub-guide hole 331.

[0074] In these alternative embodiments, the first sub-guide hole 321 has a wider opening and is located on the first sub-electrode 32. The second sub-guide hole 331 has a narrower opening and is located on the second sub-electrode 33. The first sub-electrode 32 and the second sub-electrode 33 can be arranged in a stacked manner, or a certain gap can be provided between them.

[0075] During the etching process, the ion beam first passes through the first sub-guide hole 321. Due to the large radial dimension of the first sub-guide hole 321, the ion beam can smoothly pass through and enter the connection between the first sub-electrode 32 and the second sub-electrode 33. Subsequently, the ion beam flows through the second sub-guide hole 331, which has a smaller aperture, allowing the focusing degree of the ion beam to gradually increase.

[0076] In some alternative embodiments, such as Figure 4 As shown, the dimension of the first sub-guide hole 321 along the first direction is smaller than the dimension of the second sub-guide hole 331 along the first direction.

[0077] In these optional embodiments, the length of the first sub-guide aperture 321 along the ion beam flow direction is shorter than the length of the second sub-guide aperture 331 along the ion beam flow direction. This embodiment allows for a progressively increasing focus of the ion beam by the first and second sub-guide apertures 321, further enhancing the directionality and energy density of the ion beam and ensuring precise guidance and efficient transmission of the plasma 102 during the etching process.

[0078] In some alternative embodiments, the first sub-electrode 32 further includes a first defining portion. The first defining portion encloses a plurality of first sub-guide holes 321. The first defining portion includes a first sidewall facing the first sub-guide holes 321. The second sub-electrode 33 further includes a second defining portion. The second defining portion encloses a plurality of second sub-guide holes 331. The second defining portion includes a second sidewall facing the second sub-guide holes 331.

[0079] Wherein, the angle between the first sidewall and the first plane is less than or equal to the angle between the second sidewall and the first plane, and the first plane is perpendicular to the first direction.

[0080] In this embodiment, the angle between the first sidewall and the first plane is less than or equal to the angle between the second sidewall and the first plane. Specifically, the first defining portion of the first sub-electrode 32 is provided with a plurality of first sub-guide holes 321. The first sidewall is inclined toward the direction of the first sub-guide holes 321, and the angle between it and the first plane is small, which helps to optimize the guiding performance of the ion beam and reduce the deviation and non-uniformity of the ion beam when entering the guide holes 31. Similarly, the second defining portion of the second sub-electrode 33 also surrounds and forms a plurality of second sub-guide holes 331. The inclination angle of the second sidewall is relatively large, and the angle between it and the first plane is greater than or equal to the angle between the first sidewall and the first plane. The second sub-guide holes 331, by tilting at a larger angle, can more effectively guide and accelerate the ion beam. The first sub-guide holes 321 and the second sub-guide holes 331, used in combination with different inclination angles, help to achieve precise energy transfer and efficient focusing during the ion beam flow.

[0081] In some alternative embodiments, the angle between the first sidewall and the first plane is smaller than the angle between the second sidewall and the first plane, and the dimension of the first sub-guide hole 321 along the first direction is equal to the dimension of the second sub-guide hole 331 along the first direction.

[0082] In this embodiment, the sensing electrode 3 includes a first sub-electrode 32 and a second sub-electrode 33. The first sub-electrode 32 includes a first defining portion that encloses a plurality of first sub-guide holes 321, and the first defining portion includes a first sidewall facing the first sub-guide holes 321. The second sub-electrode 33 includes a second defining portion that encloses a plurality of second sub-guide holes 331, and the second defining portion includes a second sidewall facing the second sub-guide holes 331. Meanwhile, the angle between the first sidewall and the first plane is smaller than the angle between the second sidewall and the first plane, wherein the first plane is perpendicular to the first direction. Furthermore, the dimension of the first sub-guide hole 321 along the first direction is equal to the dimension of the second sub-guide hole 331 along the first direction.

[0083] In this embodiment, the first sub-guide aperture 321 and the second sub-guide aperture 331 have the same length along the first direction, ensuring that the ion beam has the same flow path width when passing through the guide aperture 31, thus avoiding the problem of uneven flow caused by aperture differences. In addition, the inclination angle of the first sidewall is small, which allows the plasma 102 flow to maintain a relatively stable flow state when entering the guide aperture 31, while the inclination angle of the second sidewall is large, which promotes the appropriate acceleration or focusing of the plasma 102 after entering the second sub-guide aperture 331.

[0084] In some optional embodiments, the first sub-electrode 32 further includes a first defining portion. The first defining portion encloses and forms a plurality of first sub-guide holes 321. The second sub-electrode 33 further includes a second defining portion. The second defining portion encloses and forms a plurality of second sub-guide holes 331.

[0085] The dimension of the first limiting portion along the second direction is smaller than the dimension of the second limiting portion along the second direction. The second direction is parallel to the direction in which the first limiting portion and the first sub-guide hole 321 are arranged side by side.

[0086] In this embodiment, the sensing electrode 3 includes a first sub-electrode 32 and a second sub-electrode 33. The first sub-electrode 32 includes a first limiting portion that encloses a plurality of first sub-guide holes 321, and the dimension of the first limiting portion along the second direction is smaller than the dimension of the second limiting portion of the second sub-electrode 33 along the second direction. The second sub-electrode 33 also includes a second limiting portion that encloses a plurality of second sub-guide holes 331. In this embodiment, the second direction is parallel to the direction in which the first limiting portion and the first sub-guide holes 321 are arranged side by side, that is, the dimension of the first limiting portion is smaller in this direction, while the dimension of the second limiting portion is relatively larger in this direction. This embodiment can more precisely control the arrangement and guiding performance of the guide holes 31, and the ion beam can be effectively guided and focused.

[0087] In some optional embodiments, an electrostatic lens layer is provided between the first sub-electrode 32 and the second sub-electrode 33. The electrostatic lens layer includes a positive electrode layer and a negative electrode layer sequentially disposed along a first direction. The positive electrode layer includes a positive electrode hole communicating with the guide hole 31. The negative electrode layer includes a negative electrode hole communicating with the guide hole 31, and the negative electrode hole is connected to the positive electrode hole.

[0088] In this embodiment, an electrostatic lens layer is disposed between the first sub-electrode 32 and the second sub-electrode 33 to regulate the flow of the ion beam through an electric field, thereby optimizing the etching process. The electrostatic lens layer includes a positive electrode layer and a negative electrode layer sequentially disposed along a first direction. Specifically, the positive electrode layer is provided with a plurality of positive electrode holes communicating with the guide hole 31, and these positive electrode holes form an electric field configuration that facilitates the focusing of the plasma 102. The negative electrode layer includes a plurality of negative electrode holes, which are interconnected with the plurality of positive electrode holes to form an electric field channel to guide the flow of the ion beam. The interconnection between the positive and negative electrode holes enables the electrostatic lens layer to generate a uniform and controllable electric field, driving the ion beam to flow along a predetermined path.

[0089] In some alternative embodiments, the negative electrode layer is located on the side of the positive electrode layer facing the generation chamber 11. The negative electrode port communicates with the first sub-guide hole 321, and the positive electrode port communicates with the second sub-guide hole 331.

[0090] In these alternative embodiments, the negative electrode aperture provides a negative charge guiding channel for the plasma 102, while the positive electrode aperture forms a positive charge guiding channel. This rational arrangement of positive and negative electrode apertures allows the electrostatic lens layer to precisely focus the ion beam and ensure that the ion beam is smoothly transported to the generation chamber 11 in a predetermined direction and at a predetermined speed, enhancing the accuracy and stability of the etching process.

[0091] In some embodiments, a multi-level pressure zone may be provided in the etching chamber 12 to guide the free radicals of chemical etching to diffuse along the ion beam direction through gradient pressure changes, thereby enhancing the directional movement of free radicals, further improving the anisotropic etching effect, and reducing the lateral etching of the array substrate 100.

[0092] In some alternative embodiments, the etching apparatus further includes a carrier 4 located within the etching chamber 12. The carrier 4 includes a receiving space 41. The receiving space 41 is used to contain etching solution to provide etching solution during the wet etching process.

[0093] In some alternative embodiments, the carrier 4 is grounded. Grounding the carrier 4 improves electrical safety.

[0094] In some alternative embodiments, the sensing electrode 3 is electrically connected to a DC power supply 5 having a first polarity. The accommodating space 41 is also used to accommodate ions of a second polarity.

[0095] In the implementation of this invention, the sensing electrode 3 is electrically connected to a DC power supply 5 with a first polarity to generate the necessary electric field during the etching process, so as to effectively guide the flow and focusing of the plasma 102. The DC power supply 5 provides the required electric field strength and polarity by adjusting the voltage and current, thereby controlling the electric field distribution around the sensing electrode 3. Meanwhile, the accommodating space 41 of the carrier 4 is used not only to accommodate the etching solution but also to accommodate ions with a second polarity. The ion beam is guided into the accommodating space 41 and reacts with the ions of the second polarity in the etching solution, thereby realizing the etching process.

[0096] In some alternative embodiments, such as Figure 1 As shown, the plasma production unit 2 includes an RF electrode 21. The RF electrode 21 is used to convert the etching gas 101 into plasma 102.

[0097] Specifically, the plasma production unit 2 also includes an RF power supply 22. The RF power supply 22 is electrically connected to the RF electrode 21. The RF power supply 22 provides a high-frequency electrical signal, which is transmitted to the etching gas 101 through the RF electrode 21, thereby generating high-energy electrons in the etching gas 101, exciting gas molecules and forming plasma 102.

[0098] In some alternative embodiments, the etching chamber 12 includes an exhaust port located on the side of the etching chamber 12 away from the sensing electrode 3, so as to effectively discharge the waste gas and residual gas generated during the etching process and ensure that the gas flow and pressure in the etching chamber 12 are maintained within the optimal operating range.

[0099] In some optional embodiments, the etching chamber 12 also includes an air inlet located on the side of the etching chamber 12 near the sensing electrode 3, so as to introduce external etching gas 101 into the etching chamber 12 to supply the required gas source during the etching process.

[0100] A second aspect of this application also provides an array substrate 100 for a display panel. The array substrate 100 is fabricated using an etching apparatus provided in any of the first aspects described above.

[0101] Since the array substrate 100 of the second aspect of this application is fabricated using the etching equipment provided by any of the first aspects of the above-described embodiments, the array substrate 100 of the second aspect of this application has the beneficial effects of the etching equipment provided by any of the first aspects of the above-described embodiments, which will not be repeated here.

[0102] The embodiments of the third aspect of this application also provide a display panel, including the array substrate 100 provided in any of the second aspect embodiments described above. Since the display panel of the third aspect embodiment includes the array substrate 100 of any of the second aspect embodiments described above, the display panel of the third aspect embodiment has the beneficial effects of the array substrate 100 of any of the second aspect embodiments described above, which will not be repeated here.

[0103] A fourth aspect of this application provides a display device including the display panel provided in any of the third aspect embodiments described above. Since the display device provided in the fourth aspect of this application includes the display panel of any of the third aspect embodiments described above, it possesses the beneficial effects of the display panel of any of the third aspect embodiments described above, which will not be elaborated further here.

[0104] The display devices in this application include, but are not limited to, mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, control consoles, and other devices with display functions.

[0105] Although this application has been described with reference to preferred embodiments, various modifications can be made thereto and components can be replaced with equivalents without departing from the scope of this application. In particular, the technical features mentioned in the various embodiments can be combined in any manner, provided there is no structural conflict. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. An etching apparatus, characterized in that, The etching equipment is used to fabricate the array substrate of the display panel, and the etching equipment includes: The fabrication chamber includes a generation chamber and an etching chamber arranged sequentially along a first direction. The generation chamber is used to receive etching gas, and the etching chamber is used to support the array substrate. A plasma production unit is configured to convert the etching gas into plasma; A sensing electrode is located within the fabrication chamber and divides the fabrication chamber into a generation chamber and an etching chamber. The sensing electrode includes a plurality of guide holes that connect the generation chamber and the etching chamber. The sensing electrode is configured to generate an ion beam from the plasma and guide it through the guide holes into the etching chamber to etch the array substrate. At least a portion of the guide holes have an opening area at the end near the generation chamber that is larger than the opening area at the end near the etching chamber.

2. The etching apparatus according to claim 1, characterized in that, In the direction from the generation chamber to the etching chamber, the radial dimension of the guide hole gradually decreases; Preferably, the sensing electrode includes a first region and a second region, both the first region and the second region include the guide hole, and the opening area of ​​the guide hole in the first region near the generating chamber is larger than the opening area of ​​the guide hole in the second region near the generating chamber. Preferably, the opening area of ​​the guide hole in the first region near the etching chamber is greater than or less than the opening area of ​​the guide hole in the second region near the etching chamber. Preferably, the second region is arranged around the first region.

3. The etching apparatus according to claim 1, characterized in that, The guide hole includes a first segment hole structure and a second segment hole structure that are interconnected. The first segment hole structure is located on the side of the second segment hole structure that is closer to the generation chamber. At least a portion of the radial dimension of the first segment hole structure is larger than the radial dimension of the second segment hole structure. Preferably, in the direction from the generation chamber to the etching chamber, the radial dimension of at least one of the first and second hole structures gradually decreases; Preferably, the first cross-section of at least one of the first hole structure and the second hole structure is rectangular, and the first cross-section passes through the central axis of the guide hole.

4. The etching apparatus according to any one of claims 1-3, characterized in that, The sensing electrode includes a first sub-electrode and a second sub-electrode, the first sub-electrode being located on the side of the second sub-electrode facing the generation chamber, and the guide hole including a first sub-guide hole located on the first sub-electrode and a second sub-guide hole located on the second sub-electrode, the first sub-guide hole and the second sub-guide hole being connected; Wherein, at least a portion of the radial dimension of the first sub-guide hole is greater than the radial dimension of the second sub-guide hole.

5. The etching apparatus according to claim 4, characterized in that, The dimension of the first sub-guide hole along the first direction is smaller than the dimension of the second sub-guide hole along the first direction.

6. The etching apparatus according to claim 4, characterized in that, The first sub-electrode further includes a first limiting portion, which encloses and forms a plurality of first sub-guide holes, and the first limiting portion includes a first sidewall facing the first sub-guide holes; the second sub-electrode further includes a second limiting portion, which encloses and forms a plurality of second sub-guide holes, and the second limiting portion includes a second sidewall facing the second sub-guide holes; Wherein, the angle between the first sidewall and the first plane is less than or equal to the angle between the second sidewall and the first plane, and the first plane is perpendicular to the first direction; Preferably, the angle between the first sidewall and the first plane is smaller than the angle between the second sidewall and the first plane, and the dimension of the first sub-guide hole along the first direction is equal to the dimension of the second sub-guide hole along the first direction.

7. The etching apparatus according to claim 4, characterized in that, The first sub-electrode further includes a first limiting portion, which encloses and forms a plurality of first sub-guide holes; the second sub-electrode further includes a second limiting portion, which encloses and forms a plurality of second sub-guide holes; Wherein, the dimension of the first limiting part along the second direction is smaller than the dimension of the second limiting part along the second direction, and the second direction is parallel to the direction in which the first limiting part and the first sub-guide hole are arranged side by side.

8. The etching apparatus according to claim 4, characterized in that, An electrostatic lens layer is provided between the first sub-electrode and the second sub-electrode. The electrostatic lens layer includes a positive electrode layer and a negative electrode layer arranged sequentially along a first direction. The positive electrode layer includes a positive electrode hole communicating with the guide hole, and the negative electrode layer includes a negative electrode hole communicating with the guide hole. The negative electrode hole is connected to the positive electrode hole. Preferably, the negative electrode layer is located on the side of the positive electrode layer facing the generation chamber, the negative electrode hole is connected to the first sub-guide hole, and the positive electrode hole is connected to the second sub-guide hole.

9. The etching apparatus according to claim 1, characterized in that, It also includes a carrier located within the etching chamber, the carrier including a receiving space for containing the etching solution; Preferably, the carrier is grounded; Preferably, the sensing electrode is electrically connected to a DC power supply with a first polarity, and the accommodating space is used to accommodate ions with a second polarity; Preferably, the plasma production unit includes a radio frequency electrode for converting the etching gas into plasma; Preferably, the etching chamber includes an exhaust port located on the side of the etching chamber away from the sensing electrode; Preferably, the etching chamber further includes an air inlet located on the side of the etching chamber near the sensing electrode.

10. An array substrate for a display panel, characterized in that, The array substrate is prepared by the etching apparatus according to any one of claims 1-9.

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