Ion beam etching apparatus, control method of ion beam etching apparatus, and pipe assembly

Abstract

The application discloses an ion beam etching device, a control method of the ion beam etching device and a pipeline assembly. The ion beam etching device comprises a plasma chamber, an etching chamber, an induction electrode, a pipeline assembly and a movable valve. The plasma chamber comprises a first exhaust hole. The etching chamber comprises a second exhaust hole. The induction electrode is arranged between the plasma chamber and the etching chamber. The first exhaust hole and the second exhaust hole are respectively located on two sides of the induction electrode. The pipeline assembly comprises an exhaust pipeline and the movable valve. The exhaust pipeline extends along a second direction. The plasma chamber and the etching chamber are located on one side of the exhaust pipeline. The first exhaust hole and the second exhaust hole are in communication with the exhaust pipeline. The movable valve is arranged in the exhaust pipeline. The movable valve is movably arranged along the second direction relative to the induction electrode, and the movable valve is rotatably arranged relative to the induction electrode about an axis parallel to a first direction. The ion beam etching device, the control method of the ion beam etching device and the pipeline assembly disclosed by the application can reduce the structural complexity of the pipeline assembly.

Description

Technical Field

[0001] This application relates to the field of display panel manufacturing technology, and in particular to an ion beam etching apparatus, a control method for the ion beam etching apparatus, and a pipeline assembly. Background Technology

[0002] In the manufacturing process of display panels, an ion beam etching apparatus is used to pattern a specific film layer. In this apparatus, ionization occurs within the plasma chamber, forming plasma with free radicals. Simultaneously, under the influence of an electric field, ions bombard the surface of the film layer in the etching chamber. Both the plasma chamber and the etching chamber are connected to exhaust ducts and are equipped with valves to expel free radicals. Adjusting the valves in both the plasma and etching chambers is necessary depending on the state of the ion beam etching apparatus. However, having two valves increases the structural complexity of the exhaust duct system, raising maintenance difficulty and costs. Summary of the Invention

[0003] This application provides an ion beam etching apparatus, a control method for the ion beam etching apparatus, and a pipeline assembly, which can reduce the structural complexity of the pipeline assembly.

[0004] In a first aspect, embodiments of this application provide an ion beam etching apparatus for fabricating at least one film layer of a display panel, comprising: a plasma chamber including a first exhaust port extending along a first direction; an etching chamber including a second exhaust port extending along the first direction; a sensing electrode disposed between the plasma chamber and the etching chamber, with the first and second exhaust ports located on opposite sides of the sensing electrode; a conduit assembly including an exhaust conduit and a movable valve; at least a portion of the exhaust conduit extending along a second direction, the first and second directions being perpendicular; the plasma chamber and the etching chamber located on one side of the exhaust conduit along the first direction; both the first and second exhaust ports communicating with the exhaust conduit; the movable valve disposed within the exhaust conduit, the orthographic projection of the movable valve along the first direction overlapping the orthographic projection of the sensing electrode along the first direction; the movable valve being movable relative to the sensing electrode along the second direction, and the movable valve being rotatable relative to the sensing electrode about an axis parallel to the first direction.

[0005] According to an embodiment of the first aspect of this application, the ion beam etching apparatus further includes a first state, a second state, and a third state; in the first state, the orthographic projection of the movable valve along the first direction covers the orthographic projection of the first exhaust hole along the first direction, and the orthographic projection of the movable valve along the first direction and the orthographic projection of the second exhaust hole along the first direction are spaced apart; in the second state, the orthographic projection of the movable valve along the first direction covers the orthographic projection of the second exhaust hole along the first direction, and the orthographic projection of the movable valve along the first direction and the orthographic projection of the first exhaust hole along the first direction are spaced apart; in the third state, the orthographic projection of the movable valve along the first direction and the orthographic projection of the first exhaust hole along the first direction are spaced apart, and the orthographic projection of the movable valve along the first direction and the orthographic projection of the second exhaust hole along the first direction are spaced apart.

[0006] According to an embodiment of the first aspect of this application, the ion beam etching apparatus further includes a fourth state; in the fourth state, the orthographic projection of the movable valve along the first direction partially overlaps with the orthographic projection of the first exhaust port along the first direction, and the orthographic projection of the movable valve along the first direction partially overlaps with the orthographic projection of the second exhaust port along the first direction.

[0007] According to an embodiment of the first aspect of this application, the movable valve is rectangular; in a first state, the length direction of the movable valve is parallel to the second direction; in a second state, the length direction of the movable valve is parallel to the second direction; and in a third state, the length direction of the movable valve is perpendicular to the second direction.

[0008] According to an embodiment of the first aspect of this application, the length of the movable valve is L0, the width of the movable valve is W0, the width of the first vent hole along the second direction is W11, the width of the first vent hole along the perpendicular second direction is W12, the width of the second vent hole along the second direction is W21, and the width of the first vent hole along the perpendicular second direction is W22, wherein L0≥W11, L0≥W21, W0≥W12, and W0≥W22.

[0009] According to an embodiment of the first aspect of this application, the thickness of the sensing electrode along the second direction is W31, wherein L0 ≥ W11 + W31 and L0 ≥ W21 + W31.

[0010] According to an embodiment of the first aspect of this application, the width of the sensing electrode along the perpendicular second direction is W32, wherein W31≥W0 and W32≥L0.

[0011] According to an embodiment of the first aspect of this application, W11 = W21, and W12 = W22.

[0012] According to an embodiment of the first aspect of this application, the pipeline assembly further includes a first drive assembly and a second drive assembly, wherein the first drive assembly drives the movable valve to move along a second direction, and the second drive assembly drives the movable valve to rotate about an axis parallel to the first direction.

[0013] According to an embodiment of the first aspect of this application, the number of first vent holes is at least two, the number of second vent holes is at least two, and the number of movable valves is at least two. The first vent holes and the movable valves correspond one-to-one, and the second vent holes and the movable valves correspond one-to-one.

[0014] According to an embodiment of the first aspect of this application, the ion beam etching apparatus further includes a first sensor and a second sensor; the first sensor is disposed in the plasma chamber and is used to detect the free radical concentration in the plasma chamber; the second sensor is disposed in the etching chamber and is used to detect the free radical concentration in the etching chamber.

[0015] According to an embodiment of the first aspect of this application, the ion beam etching apparatus further includes a control component, which receives a first concentration signal emitted by a first sensor and a second concentration signal emitted by a second sensor, and issues a valve control signal based on the first concentration signal and the second concentration signal to control the rotation and / or movement of a movable valve.

[0016] Secondly, embodiments of this application provide a control method for an ion beam etching apparatus. This control method is used to control the ion beam etching apparatus of the first aspect embodiment of this application. The control method includes: moving a movable valve along a second direction such that the orthographic projection of the movable valve along a first direction covers the orthographic projection of a first exhaust hole along a first direction, with the orthographic projection of the movable valve along the first direction and the orthographic projection of a second exhaust hole along the first direction spaced apart; moving the movable valve along a second direction such that the orthographic projection of the movable valve along the first direction covers the orthographic projection of the second exhaust hole along the first direction, with the orthographic projection of the movable valve along the first direction and the orthographic projection of the first exhaust hole along the first direction spaced apart; and rotating the movable valve about an axis parallel to the first direction such that the orthographic projection of the movable valve along the first direction and the orthographic projection of the first exhaust hole along the first direction are spaced apart, with the orthographic projection of the movable valve along the first direction and the orthographic projection of the second exhaust hole along the first direction spaced apart.

[0017] Thirdly, embodiments of this application provide a conduit assembly for use in the ion beam etching apparatus of the first aspect of this application.

[0018] In the ion beam etching apparatus, control method, and piping assembly provided in this application embodiment, the sensing electrode of the ion beam etching apparatus is disposed between the plasma chamber and the etching chamber, and the first exhaust port and the second exhaust port are respectively located on both sides of the sensing electrode, both of which are connected to the exhaust pipe. A movable valve disposed in the exhaust pipe can block the first exhaust port or the second exhaust port along a first direction, thereby closing the first exhaust port or the second exhaust port; the movable valve can also rotate around an axis parallel to the first direction, making room for the first exhaust port and the second exhaust port, so that the first exhaust port and the second exhaust port open simultaneously. The ion beam etching apparatus of this application embodiment can control the opening or closing of the first exhaust port and the second exhaust port through the movable valve, thereby simplifying the structure of the piping assembly and reducing the maintenance difficulty and cost of the piping assembly. Attached Figure Description

[0019] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of an ion beam etching apparatus according to an embodiment of this application.

[0021] Figure 2 This is a schematic diagram of the ion beam etching apparatus in the first state according to an embodiment of this application.

[0022] Figure 3 This is a schematic diagram of the ion beam etching apparatus in a second state according to an embodiment of this application.

[0023] Figure 4 This is a schematic diagram of the ion beam etching apparatus in a third state according to an embodiment of this application.

[0024] Figure 5 This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the third state with the exhaust pipe hidden along the first direction.

[0025] Figure 6 This is a schematic diagram of the ion beam etching apparatus in a fourth state according to an embodiment of this application.

[0026] Figure 7 This is a schematic diagram of the ion beam etching apparatus of this application in a fourth state with the exhaust pipe hidden along the first direction.

[0027] Figure 8This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the first state, including the first exhaust port, the second exhaust port, the sensing electrode, and the movable valve.

[0028] Figure 9 This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the first state, showing the first exhaust port, the second exhaust port, the sensing electrode, and the movable valve along a first direction.

[0029] Figure 10 This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the second state, including the first exhaust port, the second exhaust port, the sensing electrode, and the movable valve.

[0030] Figure 11 This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the second state, showing the first exhaust port, the second exhaust port, the sensing electrode, and the movable valve along a first direction.

[0031] Figure 12 This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the third state, including the first exhaust port, the second exhaust port, the sensing electrode, and the movable valve.

[0032] Figure 13 This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the third state, showing the first exhaust port, the second exhaust port, the sensing electrode, and the movable valve along a first direction.

[0033] Figure 14 This is a signal transmission diagram of a movable valve, a first driving component, and a second driving component of an ion beam etching apparatus according to an embodiment of this application.

[0034] Figure 15 This is another structural schematic diagram of the ion beam etching apparatus according to an embodiment of this application.

[0035] Figure 16 This is a signal transmission diagram of a movable valve, a first drive component, a second drive component, a first sensor, a second sensor, and a control component of an ion beam etching apparatus according to an embodiment of this application.

[0036] Figure 17 This is a schematic flowchart of a control method for an ion beam etching apparatus according to an embodiment of this application.

[0037] Figure 18 This is a schematic diagram of another structure of the pipe assembly according to an embodiment of this application.

[0038] Figure label:

[0039] 1. Plasma chamber; 11. First exhaust port;

[0040] 2. Etching chamber; 21. Second exhaust port;

[0041] 3. Sensing electrode;

[0042] 4. Piping assembly; 41. Exhaust pipe; 42. Movable valve; 43. First drive assembly; 44. Second drive assembly;

[0043] 5. Control components;

[0044] 61. First sensor; 62. Second sensor;

[0045] A1, First direction; A2, Second direction. Detailed Implementation

[0046] The features and exemplary embodiments of various aspects of this application will now be described in detail. Numerous specific details are set forth in the following detailed description in order to provide a comprehensive understanding of this application. However, it will be apparent to those skilled in the art that this application can be implemented without some of these specific details. The following description of embodiments is merely intended to provide a better understanding of this application by illustrating examples thereof.

[0047] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The embodiments will now be described in detail with reference to the accompanying drawings.

[0048] Relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes said element.

[0049] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, that layer or region will be located "below" or "under" the other layer or region.

[0050] Furthermore, the term "and / or" in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0051] It should be understood that in the embodiments of this application, "B corresponding to A" means that B is associated with A, and B can be determined based on A. However, it should also be understood that determining B based on A does not mean that B is determined solely based on A; B can also be determined based on A and / or other information.

[0052] The applicant discovered that during the manufacturing of display panels, when using an ion beam etching apparatus to etch a certain film layer, free radicals are introduced into both the plasma chamber and the etching chamber. The etching gas in the plasma chamber ionizes and forms plasma with the free radicals. Simultaneously, under the influence of an electric field, ions bombard the material surface in the etching chamber, breaking the chemical bonds and thus patterning the material to obtain the corresponding film layer. The plasma chamber and etching chamber are connected to exhaust pipes and each has its own valve. During routine etching, both the plasma chamber and etching chamber valves need to be open; during precision etching, the plasma chamber valve needs to be fully open and the etching chamber valve needs to be fully closed; during surface cleaning, the plasma chamber valve needs to be fully closed and the etching chamber valve needs to be fully open. Therefore, to meet the different operating conditions of the ion beam etching apparatus, separate control of the plasma chamber and etching chamber valves is required. However, having two valves increases the structural complexity of the exhaust pipes, thereby increasing the difficulty and cost of pipe maintenance.

[0053] Based on the above analysis, the applicant proposes an ion beam etching apparatus, a control method for the ion beam etching apparatus, and a piping assembly. The ion beam etching apparatus includes a plasma chamber, an etching chamber, a sensing electrode, and a piping assembly. The sensing electrode of the ion beam etching apparatus is disposed between the plasma chamber and the etching chamber, and a first exhaust port and a second exhaust port are respectively located on both sides of the sensing electrode, both of which are connected to an exhaust pipe. A movable valve disposed within the exhaust pipe can block either the first or second exhaust port along a first direction, thereby closing either the first or second exhaust port; the movable valve can also rotate about an axis parallel to the first direction, freeing up space at the first and second exhaust ports, allowing both the first and second exhaust ports to open simultaneously. The ion beam etching apparatus of this application can control the opening or closing of the first and second exhaust ports via a movable valve, thereby simplifying the structure of the piping assembly and reducing the maintenance difficulty and cost of the piping assembly.

[0054] Figure 1 This is a schematic diagram of an ion beam etching apparatus according to an embodiment of this application. Figure 2 This is a schematic diagram of the ion beam etching apparatus in the first state according to an embodiment of this application. Figure 3 This is a schematic diagram of the ion beam etching apparatus in a second state according to an embodiment of this application. Figure 4 This is a schematic diagram of the ion beam etching apparatus in a third state according to an embodiment of this application. Figure 5 This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the third state with the exhaust pipe hidden along the first direction.

[0055] Please see Figures 1 to 5 This application provides an ion beam etching apparatus for fabricating at least one film layer of a display panel, comprising: a plasma chamber 1 including a first exhaust port 11 extending along a first direction A1; an etching chamber 2 including a second exhaust port 21 extending along the first direction A1; a sensing electrode 3 disposed between the plasma chamber 1 and the etching chamber 2, with the first exhaust port 11 and the second exhaust port 21 located on opposite sides of the sensing electrode 3; and a conduit assembly 4 including an exhaust conduit 41 and a movable valve 42; at least a portion of the exhaust conduit 41 is included. 1. Extends along the second direction A2, with the first direction A1 and the second direction A2 perpendicular; plasma chamber 1 and etching chamber 2 are located on one side of exhaust pipe 41 along the first direction A1; the first exhaust port 11 and the second exhaust port 21 are both connected to exhaust pipe 41; movable valve 42 is disposed in exhaust pipe 41, and the orthographic projection of movable valve 42 along the first direction A1 overlaps with the orthographic projection of sensing electrode 3 along the first direction A1; movable valve 42 is movable relative to sensing electrode 3 along the second direction A2, and movable valve 42 is rotatable relative to sensing electrode 3 about an axis parallel to the first direction A1.

[0056] The ion beam etching apparatus of this application embodiment is used to fabricate at least one film layer of a display panel. When fabricating the film layer, a material layer is first fabricated, and then the material layer is etched using the ion beam etching apparatus of this application embodiment to obtain the film layer. Exemplarily, it can be used to fabricate, but is not limited to, source / drain layers, insulating layers, and active layers. In this application embodiment, the first direction A1 and the second direction A2 are perpendicular to each other. When the ion beam etching apparatus of this application embodiment is placed on a horizontal plane, the first direction A1 can be horizontal, and the second direction A2 can be vertical.

[0057] In this embodiment, etching gas and a gas containing free radicals are introduced into plasma chamber 1 together to form plasma. Exemplarily, the etching gas can be carbon tetrafluoride. A sensing electrode 3 is disposed between plasma chamber 1 and etching chamber 2 to generate an electric field. Under the action of the electric field, ions in the plasma are accelerated and enter etching chamber 2. The material layer to be etched is disposed in etching chamber 2. The accelerated ions bombard the surface of the material layer, causing the chemical bonds in the material layer to break, thereby etching the material layer to obtain the corresponding film layer of the display panel.

[0058] The exhaust duct 41 is used to discharge gases containing free radicals and can also remove substances generated during the etching of the material layer. The first exhaust port 11 of the plasma chamber 1 and the second exhaust port 21 of the etching chamber 2 are both connected to the exhaust duct 41 of the pipe assembly 4. To facilitate the arrangement of the exhaust duct 41, the first exhaust port 11, and the second exhaust port 21, at least a portion of the exhaust duct 41 extends along the second direction A2, the first exhaust port 11 extends along the first direction A1, and the second exhaust port 21 extends along the first direction A1. The movable valve 42 of the pipe assembly 4 is used to control the opening and closing of the first exhaust port 11 and the second exhaust port 21.

[0059] The movable valve 42 of the pipe assembly 4 is used to control the opening and closing of the first exhaust port 11 and the second exhaust port 21. The movable valve 42 is disposed inside the exhaust pipe 41 and is movable along the second direction A2. Since the first exhaust port 11 and the second exhaust port 21 are located on both sides of the sensing electrode 3, that is, the first exhaust port 11 and the second exhaust port 21 are arranged along the second direction A2, when the movable valve 42 moves along the second direction A2 toward the first exhaust port 11 until it completely blocks the first exhaust port 11, causing the first exhaust port 11 to close, and the second exhaust port 21 is exposed relative to the movable valve 42, causing the second exhaust port 21 to open, the ion beam etching apparatus of this embodiment can perform precise etching. When the movable valve 42 moves along the second direction A2 toward the second exhaust port 21 until it completely blocks the second exhaust port 21, causing the second exhaust port 21 to close, and the first exhaust port 11 is exposed relative to the movable valve 42, causing the first exhaust port 11 to open, the ion beam etching apparatus of this embodiment can perform surface cleaning. The movable valve 42 can also be rotatably configured about an axis parallel to the first direction A1, and the movable valve 42 rotates relative to the induction electrode 3. Since the first exhaust port 11 and the second exhaust port 21 are located on both sides of the induction electrode 3, when the movable valve 42 rotates to the side of the induction electrode 3, both the first exhaust port 11 and the second exhaust port 21 are exposed relative to the movable valve 42, so that both the first exhaust port 11 and the second exhaust port 21 are open. At this time, the ion beam etching apparatus of this embodiment can perform conventional etching.

[0060] In this embodiment, the movable valve 42 can control the opening or closing of the first exhaust port 11 and the second exhaust port 21, thereby adjusting the working state of the ion beam etching device. Therefore, while meeting the control requirements of the ion beam etching device in this embodiment, the ion beam etching device can simplify the structural complexity of the pipeline assembly 4, thereby reducing the maintenance difficulty and cost of the pipeline assembly 4.

[0061] Furthermore, during the movement or rotation of the movable valve 42, the orthographic projection of the movable valve 42 along the first direction A1 overlaps with the orthographic projection of the sensing electrode 3 along the first direction A1. In other words, along the first direction A1, the movable valve 42 can always partially overlap with the position of the sensing electrode 3, thereby limiting the movable range of the movable valve 42.

[0062] Further reading Figures 2 to 5 The ion beam etching apparatus further includes a first state, a second state, and a third state. In the first state, the orthographic projection of the movable valve 42 along the first direction A1 covers the orthographic projection of the first exhaust hole 11 along the first direction A1, and the orthographic projection of the movable valve 42 along the first direction A1 and the orthographic projection of the second exhaust hole 21 along the first direction A1 are spaced apart. In the second state, the orthographic projection of the movable valve 42 along the first direction A1 covers the orthographic projection of the second exhaust hole 21 along the first direction A1, and the orthographic projection of the movable valve 42 along the first direction A1 and the orthographic projection of the first exhaust hole 11 along the first direction A1 are spaced apart. In the third state, the orthographic projection of the movable valve 42 along the first direction A1 and the orthographic projection of the first exhaust hole 11 along the first direction A1 are spaced apart, and the orthographic projection of the movable valve 42 along the first direction A1 and the orthographic projection of the second exhaust hole 21 along the first direction A1 are spaced apart.

[0063] When the ion beam etching apparatus of this embodiment is in the first state, the orthographic projection of the movable valve 42 along the first direction A1 covers the orthographic projection of the first exhaust port 11 along the first direction A1. The orthographic projection of the movable valve 42 along the first direction A1 and the orthographic projection of the second exhaust port 21 along the first direction A1 are spaced apart. That is, the movable valve 42 moves towards the first exhaust port 11 along the second direction A2 until it completely blocks the first exhaust port 11, thereby closing the first exhaust port 11 and exposing the second exhaust port 21 relative to the movable valve 42, thereby opening the second exhaust port 21. At this time, the ion beam etching apparatus of this embodiment is in the precise etching working state.

[0064] When the ion beam etching apparatus of this embodiment is in the second state, the orthographic projection of the movable valve 42 along the first direction A1 covers the orthographic projection of the second exhaust port 21 along the first direction A1. The orthographic projection of the movable valve 42 along the first direction A1 and the orthographic projection of the first and second exhaust ports along the first direction A1 are spaced apart. That is, the movable valve 42 moves along the second direction A2 toward the second exhaust port 21 until it completely blocks the second exhaust port 21, thereby closing the second exhaust port 21 and exposing the first exhaust port 11 relative to the movable valve 42, thereby opening the first exhaust port 11. At this time, the ion beam etching apparatus of this embodiment is in the surface cleaning working state.

[0065] When the ion beam etching apparatus of this embodiment is in the third state, the orthographic projection of the movable valve 42 along the first direction A1 is spaced apart from the orthographic projection of the first exhaust port 11 along the first direction A1, and the orthographic projection of the movable valve 42 along the first direction A1 is spaced apart from the orthographic projection of the second exhaust port 21 along the first direction A1. That is, when the movable valve 42 is rotated to the side of the sensing electrode 3, both the first exhaust port 11 and the second exhaust port 21 are exposed relative to the movable valve 42, so that both the first exhaust port 11 and the second exhaust port 21 are open. At this time, the ion beam etching apparatus of this embodiment is in the normal etching working state.

[0066] Figure 6 This is a schematic diagram of the ion beam etching apparatus in a fourth state according to an embodiment of this application. Figure 7 This is a schematic diagram of the ion beam etching apparatus of this application in a fourth state with the exhaust pipe hidden along the first direction.

[0067] Further, please refer to Figure 6 and Figure 7 The ion beam etching apparatus also includes a fourth state; in the fourth state, the orthographic projection of the movable valve 42 along the first direction A1 partially overlaps with the orthographic projection of the first exhaust port 11 along the first direction A1, and the orthographic projection of the movable valve 42 along the first direction A1 partially overlaps with the orthographic projection of the second exhaust port 21 along the first direction A1.

[0068] When the ion beam etching apparatus of this embodiment is in the fourth state, the orthographic projection of the movable valve 42 along the first direction A1 partially overlaps with the orthographic projection of the first exhaust port 11 along the first direction A1, and the orthographic projection of the movable valve 42 along the first direction A1 partially overlaps with the orthographic projection of the second exhaust port 21 along the first direction A1. That is, when the movable valve 42 rotates by a certain angle, a portion of the first exhaust port 11 and a portion of the second exhaust port 21 are exposed relative to the movable valve 42, causing both the first exhaust port 11 and the second exhaust port 21 to be partially open. By adjusting the rotation angle of the movable valve 42, the opening ratio of the first exhaust port 11 and the second exhaust port 21 can be adjusted, thereby precisely adjusting the free radical discharge ratio of the plasma chamber 1 and the etching chamber 2. At this time, the ion beam etching apparatus of this embodiment is in a conventional etching working state, but the etching accuracy is more precise than in the third state.

[0069] Further reading Figures 1 to 7 The movable valve 42 is rectangular; in the first state, the length direction of the movable valve 42 is parallel to the second direction A2; in the second state, the length direction of the movable valve 42 is parallel to the second direction A2; in the third state, the length direction of the movable valve 42 is perpendicular to the second direction A2.

[0070] The movable valve 42 in this embodiment is rectangular, having a length direction and a width direction. In a first state, the length direction of the movable valve 42 is parallel to the second direction A2, allowing the movable valve 42 to block the first exhaust port 11, and a portion of the movable valve 42 is located on the side of the sensing electrode 3. In a second state, the length direction of the movable valve 42 is parallel to the second direction A2, allowing the movable valve 42 to block the second exhaust port 21, and a portion of the movable valve 42 is located on the side of the sensing electrode 3. In a third state, the length direction of the movable valve 42 is perpendicular to the second direction A2, and the width direction is parallel to the second direction A2, allowing the movable valve 42 to accommodate the positions of the first exhaust port 11 and the second exhaust port 21, and the movable valve 42 is located on the side of the sensing electrode 3.

[0071] Figure 8 This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the first state, including the first exhaust port, the second exhaust port, the sensing electrode, and the movable valve. Figure 9 This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the first state, showing the first exhaust port, the second exhaust port, the sensing electrode, and the movable valve along a first direction. Figure 10 This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the second state, including the first exhaust port, the second exhaust port, the sensing electrode, and the movable valve. Figure 11This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the second state, showing the first exhaust port, the second exhaust port, the sensing electrode, and the movable valve along a first direction.

[0072] Further, please refer to Figures 8 to 11 The length of the movable valve 42 is L0, the width of the movable valve 42 is W0, the width of the first vent 11 along the second direction A2 is W11, the width of the first vent 11 along the perpendicular direction A2 is W12, the width of the second vent 21 along the second direction A2 is W21, and the width of the first vent 11 along the perpendicular direction A2 is W22, wherein L0≥W11, L0≥W21, W0≥W12, and W0≥W22.

[0073] The length L0 of the movable valve 42 is greater than or equal to the width W11 of the first exhaust hole 11 along the second direction A2, and the width W0 of the movable valve 42 is greater than or equal to the width W12 of the first exhaust hole 11 along the perpendicular second direction A2, so that in the first state, the movable valve 42 can block the first exhaust hole 11.

[0074] The length L0 of the movable valve 42 is greater than or equal to the width W21 of the second vent 21 along the second direction A2, and the width W0 of the movable valve 42 is greater than or equal to the width W22 of the second vent 21 along the perpendicular direction A2, so that in the second state, the movable valve 42 can block the second vent 21.

[0075] Further reading Figures 8 to 11 The thickness of the sensing electrode 3 along the second direction A2 is W31, where L0≥W11+W31 and L0≥W21+W31.

[0076] The length L0 of the movable valve 42 is greater than or equal to the sum of the width W11 of the first exhaust port 11 along the second direction A2 and the thickness W31 of the sensing electrode 3 along the second direction A2, such that in the first state, the orthographic projection of the movable valve 42 along the first direction A1 overlaps with the orthographic projection of the sensing electrode 3 along the first direction A1.

[0077] The length L0 of the movable valve 42 is greater than or equal to the sum of the width W21 of the second exhaust port 21 along the second direction A2 and the thickness W31 of the sensing electrode 3 along the second direction A2, such that in the second state, the orthographic projection of the movable valve 42 along the first direction A1 overlaps with the orthographic projection of the sensing electrode 3 along the first direction A1.

[0078] Figure 12 This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the third state, including the first exhaust port, the second exhaust port, the sensing electrode, and the movable valve. Figure 13This is a schematic diagram of the structure of the ion beam etching apparatus of this application in the third state, showing the first exhaust port, the second exhaust port, the sensing electrode, and the movable valve along a first direction.

[0079] Further, please refer to Figure 12 and Figure 13 The width of the sensing electrode 3 along the perpendicular second direction A2 is W32, where W31≥W0 and W32≥L0.

[0080] The thickness W31 of the sensing electrode 3 along the second direction A2 is greater than or equal to the width W0 of the movable valve 42, and the width W32 of the sensing electrode 3 along the perpendicular direction A2 is greater than or equal to the length L0 of the movable valve 42, so that in the third state, the movable valve 42 rotates to the side of the sensing electrode 3.

[0081] Further reading Figures 8 to 13 W11 = W21 and W12 = W22, meaning that the cross-sectional size of the first exhaust port 11 is the same as the cross-sectional size of the second exhaust port 21.

[0082] Figure 14 This is a signal transmission diagram of a movable valve, a first driving component, and a second driving component of an ion beam etching apparatus according to an embodiment of this application.

[0083] Further, please refer to Figure 14 The pipeline assembly 4 also includes a first drive assembly 43 and a second drive assembly 44. The first drive assembly 43 drives the movable valve 42 to move along the second direction A2, and the second drive assembly 44 drives the movable valve 42 to rotate about an axis parallel to the first direction A1. For example, the first drive assembly 43 can be in the form of a slide rail and slider, with a motor or telescopic cylinder driving the slider to move along the slide rail, and the movable valve 42 connected to the slider; the second drive assembly 44 can be in the form of a rotary motor, directly driving the movable valve 42 to rotate.

[0084] Furthermore, there are at least two first vent holes 11, at least two second vent holes 21, and at least two movable valves 42. The first vent holes 11 and the movable valves 42 are in one-to-one correspondence, and the second vent holes 21 and the movable valves 42 are in one-to-one correspondence.

[0085] The first exhaust port 11 corresponds one-to-one with the movable valve 42, and the second exhaust port 21 corresponds one-to-one with the movable valve 42. Each first exhaust port 11, second exhaust port 21, and movable valve 42 forms a set of structures. In this embodiment, the number of first exhaust ports 11 is at least two, the number of second exhaust ports 21 is at least two, and the number of movable valves 42 is at least two. That is, at least two sets of structures can be provided, and both sets can be used to discharge free radicals, making the pressure changes in the plasma chamber 1 and etching chamber 2 more uniform, reducing the risk of uneven local pressure in the plasma chamber 1 and etching chamber 2 affecting the etching effect.

[0086] Figure 15 This is another structural schematic diagram of the ion beam etching apparatus according to an embodiment of this application.

[0087] Further, please refer to Figure 15 The ion beam etching apparatus also includes a first sensor 61 and a second sensor 62; the first sensor 61 is disposed in the plasma chamber 1 and is used to detect the free radical concentration in the plasma chamber 1; the second sensor 62 is disposed in the etching chamber 2 and is used to detect the free radical concentration in the etching chamber 2.

[0088] A first sensor 61, installed in plasma chamber 1, is used to detect the free radical concentration within plasma chamber 1. The sensor can adjust whether and to what extent the first exhaust port 11 is opened based on the free radical concentration within plasma chamber 1. A second sensor 62, installed in etching chamber 2, is used to detect the free radical concentration within etching chamber 2. The sensor can adjust whether and to what extent the second exhaust port 21 is opened based on the free radical concentration within etching chamber 2.

[0089] Figure 16 This is a signal transmission diagram of a movable valve, a first drive component, a second drive component, a first sensor, a second sensor, and a control component of an ion beam etching apparatus according to an embodiment of this application.

[0090] Further, please refer to Figure 16 The ion beam etching apparatus also includes a control component 5, which receives a first concentration signal from a first sensor 61 and a second concentration signal from a second sensor 62. The control component 5 issues a valve control signal based on the first and second concentration signals to control the rotation and / or movement of the movable valve 42.

[0091] Both the first sensor 61 and the second sensor 62 are electrically connected to the control component 5. The first sensor 61 detects the free radical concentration in the plasma chamber 1 and sends a first concentration signal, while the second sensor 62 detects the free radical concentration in the etching chamber 2 and sends a second concentration signal. The control component 5 receives the first and second concentration signals and sends a valve control signal. The drive component of the movable valve 42 controls the movable valve 42 to rotate and / or move according to the valve control signal.

[0092] Figure 17 This is a schematic flowchart of a control method for an ion beam etching apparatus according to an embodiment of this application.

[0093] Please see Figure 17 This application provides a control method for an ion beam etching apparatus, used to control the ion beam etching apparatus of the foregoing embodiments of this application.

[0094] The control method of the ion beam etching apparatus in this application includes:

[0095] Continue reading Figure 17 Step S1: Move the movable valve 42 toward the first exhaust port 11.

[0096] The movable valve 42 is moved along the second direction A2 so that the orthographic projection of the movable valve 42 along the first direction A1 covers the orthographic projection of the first exhaust hole 11 along the first direction A1. The orthographic projection of the movable valve 42 along the first direction A1 and the orthographic projection of the second exhaust hole 21 along the first direction A1 are spaced apart, so that the ion beam etching device is in the first state, that is, the ion beam etching device is in the precise etching working state.

[0097] Continue reading Figure 17 Step S2: Move the movable valve 42 toward the second exhaust port 21.

[0098] Move the movable valve 42 along the second direction A2 so that the orthographic projection of the movable valve 42 along the first direction A1 covers the orthographic projection of the second exhaust hole 21 along the first direction A1. The orthographic projection of the movable valve 42 along the first direction A1 and the orthographic projection of the first exhaust hole 11 along the first direction A1 are spaced apart, so that the ion beam etching device is in the second state, that is, the ion beam etching device is in the surface cleaning working state.

[0099] Continue reading Figure 17 Step S3: Rotate the movable valve 42.

[0100] Rotate the movable valve 42 about an axis parallel to the first direction A1 so that the orthographic projection of the movable valve 42 along the first direction A1 is spaced apart from the orthographic projection of the first exhaust port 11 along the first direction A1, and the orthographic projection of the movable valve 42 along the first direction A1 is spaced apart from the orthographic projection of the second exhaust port 21 along the first direction A1, so that the ion beam etching device is in the third state, that is, the ion beam etching device is in the normal etching working state.

[0101] It should be noted that steps S1, S2, and S3 are not sequential, but one of steps S1, S2, and S3 is performed within the same time period. That is, the ion beam etching device is in the first, second, or third state within the same time period. Since the ion beam etching device simplifies the structural complexity of the pipeline assembly 4, the control method of the ion beam etching device in this embodiment can also reduce the complexity of the control process.

[0102] Figure 18 This is a schematic diagram of another structure of the pipe assembly according to an embodiment of this application.

[0103] Please see Figure 18 This application also provides a conduit assembly 4 for use in the ion beam etching apparatus of the foregoing embodiments of this application. The conduit assembly 4 includes an exhaust conduit 41 and a movable valve 42; at least a portion of the exhaust conduit 41 extends along a second direction A2; the movable valve 42 is movably disposed along the second direction A2 and rotatably disposed about an axis parallel to the first direction A1. The exhaust conduit 41 is used to discharge gases containing free radicals and can also carry away substances generated during the etching of the material layer. The first exhaust port 11 of the plasma chamber 1 and the second exhaust port 21 of the etching chamber 2 are both connected to the exhaust conduit 41 of the conduit assembly 4. When the movable valve 42 moves along the second direction A2 toward the first exhaust port 11 until it completely blocks the first exhaust port 11, causing the first exhaust port 11 to close, and the second exhaust port 21 is exposed relative to the movable valve 42, causing the second exhaust port 21 to open, at which point the ion beam etching apparatus of this application can perform precise etching. When the movable valve 42 moves along the second direction A2 toward the second exhaust port 21 until it completely blocks the second exhaust port 21, thus closing the second exhaust port 21, the first exhaust port 11 is exposed relative to the movable valve 42, thus opening the first exhaust port 11. At this time, the ion beam etching apparatus of this embodiment can perform surface cleaning. When the movable valve 42 rotates to the side of the sensing electrode 3, both the first exhaust port 11 and the second exhaust port 21 are exposed relative to the movable valve 42, thus opening both the first exhaust port 11 and the second exhaust port 21. At this time, the ion beam etching apparatus of this embodiment can perform conventional etching.

[0104] In summary, this application provides an ion beam etching apparatus, a control method for the ion beam etching apparatus, and a piping assembly. In the ion beam etching apparatus, a sensing electrode is disposed between the plasma chamber and the etching chamber, and a first exhaust port and a second exhaust port are located on opposite sides of the sensing electrode, both connected to an exhaust pipe. A movable valve disposed within the exhaust pipe can block either the first or second exhaust port along a first direction, thereby closing either the first or second exhaust port. The movable valve can also rotate about an axis parallel to the first direction, creating space at the first and second exhaust ports, allowing them to open simultaneously. The ion beam etching apparatus of this application can control the opening or closing of the first and second exhaust ports using a movable valve, thereby simplifying the structure of the piping assembly and reducing its maintenance difficulty and cost.

[0105] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An ion beam etching apparatus, characterized in that, The ion beam etching apparatus is used to fabricate at least one film layer of a display panel, including: The plasma chamber includes a first exhaust port extending along a first direction; The etching chamber includes a second vent hole that extends along the first direction; An induction electrode is disposed between the plasma chamber and the etching chamber, and the first exhaust port and the second exhaust port are respectively located on both sides of the induction electrode; A piping assembly includes an exhaust pipe and a movable valve; at least a portion of the exhaust pipe extends along a second direction, the first direction and the second direction being perpendicular; the plasma chamber and the etching chamber are located on one side of the exhaust pipe along the first direction; both the first exhaust port and the second exhaust port are in communication with the exhaust pipe; the movable valve is disposed within the exhaust pipe, the orthographic projection of the movable valve along the first direction overlapping the orthographic projection of the sensing electrode along the first direction; the movable valve is movable relative to the sensing electrode along the second direction, and the movable valve is rotatable relative to the sensing electrode about an axis parallel to the first direction.

2. The ion beam etching apparatus according to claim 1, characterized in that, The ion beam etching apparatus further includes a first state, a second state, and a third state; in the first state, the orthographic projection of the movable valve along the first direction covers the orthographic projection of the first exhaust port along the first direction, and the orthographic projection of the movable valve along the first direction and the orthographic projection of the second exhaust port along the first direction are spaced apart; in the second state, the orthographic projection of the movable valve along the first direction covers the orthographic projection of the second exhaust port along the first direction, and the orthographic projection of the movable valve along the first direction and the orthographic projection of the first exhaust port along the first direction are spaced apart; in the third state, the orthographic projection of the movable valve along the first direction and the orthographic projection of the first exhaust port along the first direction are spaced apart, and the orthographic projection of the movable valve along the first direction and the orthographic projection of the second exhaust port along the first direction are spaced apart. Preferably, the ion beam etching apparatus further includes a fourth state; in the fourth state, the orthographic projection of the movable valve along the first direction partially overlaps with the orthographic projection of the first exhaust port along the first direction, and the orthographic projection of the movable valve along the first direction partially overlaps with the orthographic projection of the second exhaust port along the first direction.

3. The ion beam etching apparatus according to claim 2, characterized in that, The movable valve is rectangular; in the first state, the length direction of the movable valve is parallel to the second direction; in the second state, the length direction of the movable valve is parallel to the second direction; in the third state, the length direction of the movable valve is perpendicular to the second direction.

4. The ion beam etching apparatus according to claim 3, characterized in that, The movable valve has a length of L0 and a width of W0. The width of the first vent hole along the second direction is W11, the width of the first vent hole along the perpendicular direction to the second direction is W12, the width of the second vent hole along the second direction is W21, and the width of the first vent hole along the perpendicular direction to the second direction is W22, wherein L0 ≥ W11, L0 ≥ W21, W0 ≥ W12, and W0 ≥ W22. Preferably, the thickness of the sensing electrode along the second direction is W31, wherein L0 ≥ W11 + W31, and L0 ≥ W21 + W31; Preferably, the width of the sensing electrode along the direction perpendicular to the second direction is W32, wherein W31≥W0 and W32≥L0; Preferably, W11 = W21 and W12 = W22.

5. The ion beam etching apparatus according to claim 1, characterized in that, The pipeline assembly further includes a first drive assembly and a second drive assembly, wherein the first drive assembly drives the movable valve to move along the second direction, and the second drive assembly drives the movable valve to rotate about an axis parallel to the first direction.

6. The ion beam etching apparatus according to claim 1, characterized in that, The number of first vent holes is at least two, the number of second vent holes is at least two, and the number of movable valves is at least two. The first vent holes and the movable valves correspond one-to-one, and the second vent holes and the movable valves correspond one-to-one.

7. The ion beam etching apparatus according to claim 1, characterized in that, The ion beam etching apparatus further includes a first sensor and a second sensor; the first sensor is disposed in the plasma chamber and is used to detect the free radical concentration in the plasma chamber; the second sensor is disposed in the etching chamber and is used to detect the free radical concentration in the etching chamber.

8. The ion beam etching apparatus according to claim 7, characterized in that, The ion beam etching apparatus further includes a control component, which receives a first concentration signal from the first sensor and a second concentration signal from the second sensor. The control component issues a valve control signal based on the first concentration signal and the second concentration signal to control the rotation and / or movement of the movable valve.

9. A control method for an ion beam etching apparatus, characterized in that, The control method for the ion beam etching apparatus is used to control the ion beam etching apparatus according to any one of claims 1 to 8; The control method for the ion beam etching apparatus includes: The movable valve is moved along the second direction so that the orthographic projection of the movable valve along the first direction covers the orthographic projection of the first exhaust hole along the first direction, and the orthographic projection of the movable valve along the first direction and the orthographic projection of the second exhaust hole along the first direction are spaced apart. The movable valve is moved along the second direction so that the orthographic projection of the movable valve along the first direction covers the orthographic projection of the second exhaust port along the first direction, and the orthographic projection of the movable valve along the first direction and the orthographic projection of the first exhaust port along the first direction are spaced apart. The movable valve is rotated about an axis parallel to the first direction so that the orthographic projection of the movable valve along the first direction is spaced apart from the orthographic projection of the first exhaust port along the first direction, and the orthographic projection of the movable valve along the first direction is spaced apart from the orthographic projection of the second exhaust port along the first direction.

10. A pipe assembly, characterized in that, The pipeline assembly is used in the ion beam etching apparatus according to any one of claims 1 to 8.

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