Substrate etching apparatus with mixing chamber and display panel manufacturing system

Abstract

The application relates to the field of display panels, and discloses a substrate etching device with a mixing chamber and a display panel manufacturing system, wherein the substrate etching device with the mixing chamber comprises a mixing chamber connected between an ion beam generator and an etching reaction chamber, the mixing chamber comprises a first connecting plate and a second connecting plate, a containing cavity between the first connecting plate and the second connecting plate, and a plurality of mixing pieces in the containing cavity, the first connecting plate comprises a gas inlet, the ion beam generator is communicated with the mixing chamber through the gas inlet, and a reaction gas is introduced into the mixing chamber through the gas inlet, the mixing piece comprises a mixing cavity with an opening, the plurality of mixing pieces comprise a part of the mixing pieces arranged along a second direction, the spacing between one end of the part of the mixing pieces away from the first connecting plate and the first connecting plate is not equal, and the spacing has a decreasing trend from the middle part of the first connecting plate to the two end parts along the second direction. The mixing effect of the ion beam and the reaction gas can be improved.

Description

Technical Field

[0001] This application belongs to the field of display panels, and particularly relates to a substrate etching apparatus with a mixing chamber and a display panel manufacturing system. Background Technology

[0002] Substrate etching equipment is a key piece of equipment used to achieve fine patterning on the surface of substrates (such as display panels, semiconductor wafers, etc.) using chemical or physical methods. Its core function is to form specific circuits or structures by selectively removing material layers. Substrate etching equipment can employ wet etching or dry etching.

[0003] In dry etching, physical or chemical etching is achieved using plasma or ion beams, resulting in high precision. When etching a substrate using an etchant generated from an ion beam and reactive gases, the mixing of the ion beam and the reactive gases is particularly important. Summary of the Invention

[0004] This application provides a substrate etching apparatus and a display panel manufacturing system with a mixing chamber, which can improve the mixing effect of ion beam and reactive gas.

[0005] In a first aspect, some embodiments of this application provide a substrate etching apparatus with a mixing chamber, including an ion beam generator, a mixing chamber, and an etching reaction chamber distributed along a first direction. The mixing chamber is connected between the ion beam generator and the etching reaction chamber. The mixing chamber includes a first connecting plate and a second connecting plate distributed along the first direction, a receiving cavity located between the first connecting plate and the second connecting plate, and a mixing assembly located within the receiving cavity. The first connecting plate includes an air inlet formed around its center point. The ion beam generator and the mixing chamber are connected through the air inlet, and a reaction gas is introduced through the air inlet. The second connecting plate has a through-hole extending along the first direction. The first channel connects the mixing chamber and the etching reaction chamber. The mixing assembly includes multiple mixing components, which are spaced apart on the second connecting plate. Each mixing component has a mixing cavity with an opening facing the first connecting plate. The size of the mixing cavity along the second direction tends to decrease from the first connecting plate to the second connecting plate. The multiple mixing components include a portion of the mixing components arranged along the second direction. The distance between the end of the portion of the mixing components facing away from the first connecting plate and the first connecting plate is unequal, and the distance tends to decrease from the middle of the first connecting plate to both ends along the second direction. The first direction and the second direction intersect.

[0006] In some embodiments of this application, the plurality of hybrid components include another portion of hybrid components arranged along a third direction. The distance between the end of the other portion of hybrid components facing away from the first connecting plate and the first connecting plate is not equal, and the distance tends to decrease from the middle of the first connecting plate to both ends along the third direction. The first direction, the second direction and the third direction are perpendicular to each other.

[0007] In some embodiments of this application, multiple hybrid components are arranged in a multi-ring pattern around the center of the first connecting plate; the distance between the end of the multiple hybrid components facing away from the first connecting plate and the first connecting plate tends to decrease from the center to the circumference.

[0008] In some embodiments of this application, the mixing component includes a first wall and a second wall connected to each other along a second direction, the first wall and the second wall enclosing a mixing cavity, the distance between the first wall and the first connecting plate being less than the distance between the second wall and the first connecting plate, and the second wall being closer to the center of the first connecting plate than the first wall; preferably, along the first direction, a first channel is placed on both sides of the mixing component; preferably, along the first direction, the first channel includes a hole structure, the first wall is opposite to one first channel, and the second wall is opposite to another first channel.

[0009] In some embodiments of this application, the mixing chamber further includes a lifting mechanism connected to the mixing component, used to control the distance between the mixing component and the first connecting plate.

[0010] In some embodiments of this application, the lifting mechanism includes multiple lifting components, and the mixing component is mounted on the second connecting plate via the lifting components, with the lifting components and the mixing component being opposite each other.

[0011] In some embodiments of this application, the second connecting plate includes multiple plates extending along a third direction, a hybrid component is mounted on the plate, and the multiple plates are spaced apart along a second direction to form a first channel, with the first direction, the second direction, and the third direction being perpendicular to each other; the lifting mechanism includes multiple lifting components, which are connected to the plate.

[0012] In some embodiments of this application, a mounting plate is also included. The mounting plate is placed between the second connecting plate and the etching reaction chamber. The mounting plate includes a plurality of second channels. The plurality of second channels are arranged in rows along a second direction and in columns along a third direction. Along the second direction, the plate and the second channels are alternately arranged.

[0013] In some embodiments of this application, the distance between the mounting plate and the second connecting plate is less than the distance between the second connecting plate and the first connecting plate.

[0014] Secondly, some embodiments of this application also provide a display panel manufacturing system, including the substrate etching apparatus with a mixing chamber described in the above embodiments.

[0015] The substrate etching apparatus and display panel manufacturing system with a mixing chamber according to the embodiments of this application, by setting a mixing chamber between the ion beam generator and the etching reaction chamber, and setting multiple mixing components in the mixing chamber, mixes the reactive gas and ion beam entering the accommodating cavity of the mixing chamber. The mixing components have a radial dimension reduction trend, which increases the residence time of the gas and thus improves the mixing uniformity. Furthermore, based on the distribution trend of the reactive gas and ion beam entering through the inlet, at least a portion of the multiple mixing components are arranged to decrease in distance from the middle to both ends along the second direction with respect to the first connecting plate. This allows the contact time between the gas and the mixing components along the first direction within the same time period to be synchronized, achieving a better mixing effect. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 A schematic diagram of the structure of a substrate etching apparatus with a mixing chamber provided in some embodiments of this application;

[0018] Figure 2 for Figure 1 A schematic diagram of a medium ion beam generator;

[0019] Figure 3 A schematic diagram showing an arrangement of multiple components of a substrate etching apparatus provided in an embodiment of this application;

[0020] Figure 4 for Figure 1 Schematic diagram of the structure of the hybrid component;

[0021] Figure 5 A schematic diagram showing an arrangement of multiple components of a substrate etching apparatus provided in an embodiment of this application;

[0022] Figure 6 This is another schematic diagram of the substrate etching apparatus provided in some embodiments of this application.

[0023] Figure label:

[0024] 100, Ion beam generator; 110, First gas supply unit; 120, Processing chamber; 130, Induction electrode; 200, Mixing chamber; 201, First connecting plate; 202, Second connecting plate; 203, Receiving cavity; 204, Gas inlet; 210, Mixing assembly; 211, Mixing component; 212, Second wall; 213, First wall; 214, Mixing chamber; 220, First channel; 221, Main plate; 230, Lifting component; 240, Mounting plate; 241, Second channel; 242, Intermediate cavity; 300, Etching reaction chamber; 310, Stage; 320, Substrate; 400, Second gas supply unit; Z, First direction; X, Second direction; Y, Third direction. Detailed Implementation

[0025] The embodiments of the technical solution of this application will now be described in detail with reference to the accompanying drawings. These embodiments are only used to more clearly illustrate the technical solution of this application and are therefore merely examples, and should not be used to limit the scope of protection of this application.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0027] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined.

[0028] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0029] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0030] In the description of the embodiments of this application, the term "multiple" refers to two or more (including two), similarly, "multiple sets" refers to two or more (including two sets), and "multiple pieces" refers to two or more (including two pieces).

[0031] In the description of the embodiments in this application, the technical terms "center," "longitudinal," and "lateral" are used.

[0032] Length, Width, Thickness, Top, Bottom, Front, Back, Left, Right

[0033] "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise"

[0034] The orientation or positional relationship indicated by "axial", "radial", "circumferential", etc., is based on the orientation or positional relationship shown in the accompanying drawings and is only for the purpose of facilitating the description of the embodiments of this application and simplifying the description. It is not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the embodiments of this application.

[0035] In the description of the embodiments of this application, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0036] Substrates are mainly used in semiconductors, display panels, and other fields, and can include glass substrates, metal substrates, ceramic substrates, etc. Substrate etching technology can be divided into two main categories: wet etching and dry etching. Wet etching has low cost but limited precision and is suitable for large areas or simple patterns; dry etching has high precision and strong controllability, and is a core technology in semiconductor and micro-nano manufacturing. Dry etching uses high-energy ions or active free radicals in plasma (such as CF4, SF6, etc.) to physically bombard or chemically react with the substrate surface to remove the target material. Ion direct sputtering of materials (such as Ar) + In dry etching, reactive gases (such as F-) react with the material to generate volatile products (such as SiF4). RIE combines these two processes, controlling anisotropy by adjusting the gas ratio and radio frequency power to achieve substrate etching. Dry etching, with its high-precision control, is widely used in substrate etching.

[0037] Plasma refers to an ionized gaseous state composed of ions, free radicals, and electrons. Plasma is generated by very high temperatures, strong electric fields, or RF electromagnetic fields. In each of the various processes using plasma to treat substrates, a suitable selectivity ratio is required. The selectivity ratio is determined based on the degree of etching of the thin film formed on the substrate. Some of the thin films formed on the substrate can be etched by an etchant formed by the reaction of free radicals with the reactive gas. Furthermore, some of the other thin films formed on the substrate can be etched by free radicals. That is, the target of etching by the etchant and the target of etching by the free radicals are different. Therefore, it is important to adjust the ratio of etchant and free radicals acting on the substrate to adjust the selectivity ratio to suit the substrate.

[0038] Currently, conventional reactive gases and free radicals are premixed during etching, but the premixing effect is not ideal.

[0039] In view of this, some embodiments of this application provide a substrate etching apparatus with a mixing chamber. By setting up a mixing chamber and setting up a mixing element in the mixing chamber to fully mix the reactive gas and free radicals, and matching the height fluctuation of the mixing element relative to the second connecting plate with the shape of the reactive gas and free radicals entering from the air inlet, the mixing effect is improved.

[0040] Figure 1 A schematic diagram of a substrate 320 etching apparatus having a mixing chamber 200 provided for some embodiments of this application; Figure 2 for Figure 1 A schematic diagram of a medium ion beam generator 100.

[0041] like Figure 1 and Figure 2As shown in some optional embodiments of this application, a substrate 320 etching apparatus having a mixing chamber 200 includes an ion beam generator 100, a mixing chamber 200, and an etching reaction chamber 300 distributed along a first direction Z. The mixing chamber 200 is connected between the ion beam generator 100 and the etching reaction chamber 300. The mixing chamber 200 includes a first connecting plate 201 and a second connecting plate 202 distributed along the first direction Z, a receiving cavity 203 located between the first connecting plate 201 and the second connecting plate 202, and a mixing assembly 210 located within the receiving cavity 203. The first connecting plate 201 includes an air inlet 204 opened around its own center point. The ion beam generator 100 and the mixing chamber 200 are connected through the air inlet 204, and a reaction gas is introduced through the air inlet 204. The second connecting plate 202 has a first direction Z. The first channel 220, which runs through Z, connects the mixing chamber 200 and the etching reaction chamber 300. The mixing assembly 210 includes a plurality of mixing components 211, which are spaced apart from each other on the second connecting plate 202. Each mixing component 211 includes a mixing cavity 214 with an opening facing the first connecting plate 201. The size of the mixing cavity 214 along the second direction X tends to gradually decrease from the first connecting plate 201 to the second connecting plate 202. The plurality of mixing components 211 includes a portion of mixing components 211 arranged along the second direction X. The distance between the end of the portion of mixing components 211 facing away from the first connecting plate 201 and the first connecting plate 201 is unequal, and the distance tends to decrease from the middle of the first connecting plate 201 to both ends along the second direction X. The first direction Z intersects the second direction X.

[0042] In this application, the first direction Z can be the height direction of the substrate 320 etching equipment, the second direction X can be the width direction of the substrate 320 etching equipment, and the third direction Y can be the length direction of the substrate 320 etching equipment.

[0043] Exemplarily, the ion beam generator 100 is used to generate an ion beam. The generated ion beam is delivered into a mixing chamber 200 and mixed with a reaction gas placed in the mixing chamber 200 to generate a gaseous etchant. In one example, the ion beam includes NH3, the reaction gas includes NF3, and the etchant includes NH4F (ammonium fluoride), NH4F (ammonium hydrogen fluoride), HF (hydrogen fluoride), etc.

[0044] For example, the etching reaction chamber 300 is used to support the substrate 320, which undergoes an etching process in response to an etchant. In one example, the etching reaction chamber 300 includes a stage 310 for supporting the substrate 320, and the stage 310 is disposed opposite to the second connecting plate 202.

[0045] In some examples, the ion beam generator 100 may be detachably connected to the mixing chamber 200 or be an integral part of it, and the mixing chamber 200 may be detachably connected to the etching reaction chamber 300 or be an integral part of it.

[0046] In this application, the mixing chamber 200 includes a first connecting plate 201, which is placed between the ion beam generator 100 and the receiving cavity 203 of the mixing chamber 200. The first connecting plate 201 includes an air inlet 204, which can be used for the ion beam to enter into the receiving cavity 203.

[0047] In some examples, there may be one or more air inlets 204. One air inlet 204 is located in the middle of the first connecting plate 201, and multiple air inlets 204 are opened in the middle of the first connecting plate 201.

[0048] In other examples, the first connecting plate 201 is provided with a pipe, one end of which is connected to the air inlet 204 and the other end is connected to the reaction gas storage structure, so that the reaction gas in the reaction gas storage structure is introduced into the receiving cavity 203 through the air inlet 204.

[0049] As an example, the inlet direction of the reactant gas is perpendicular to the inlet direction of the ion beam, so that the reactant gas and the ion beam collide and mix at the inlet 204, thereby improving the premixing effect of the reactant gas and the ion beam.

[0050] For example, the first channel 220 can be a structure such as a round hole, a strip, a square hole, a stepped hole, or a tapered hole.

[0051] In this application, the mixing chamber 200 includes a second connecting plate 202 opposite to the first connecting plate 201. A mixing assembly 210 is disposed within the receiving cavity 203. The mixing assembly 210 includes a plurality of mixing elements 211, which are mounted on the second connecting plate 202. The mixing elements 211 further mix the gas entering from the air inlet 204. Exemplarily, the mixing element 211 includes a mixing cavity 214 with an opening for containing the gas to be mixed. The mixing element 211 has a dimension along the second direction X that tends to taper from the first connecting plate 201 to the second connecting plate 202 for better gas mixing.

[0052] For example, the gases to be mixed collide and form turbulence within a tapered mixing chamber 214, thereby achieving further mixing.

[0053] In this application, the reaction gas and ion beam are premixed and introduced into the containment cavity 203 through the gas inlet 204. Centered on the gas inlet 204, there is a diffusion trend with a large flow rate in the middle and a small flow rate in the circumferential direction. Consequently, the gas in the middle relative to the circumferential direction sinks faster towards the etching reaction chamber 300, thus making the gas entering the containment cavity 203 have a trend of low flow rate in the middle and high flow rate in the circumferential direction.

[0054] For example, the plurality of mixing components 211 includes at least a portion of mixing components 211, namely the first group of mixing components 211. The first group of mixing components 211 are arranged at intervals along the second direction X. One end of the first group of mixing components 211 and the second connector is the first connecting end. The distance between the first connecting end of the first group of mixing components 211 and the second connector is unequal and has a tendency to decrease from the middle of the first connecting plate 201 to both ends along the second direction X. This makes the first group of mixing components 211 have an arc along the second direction X that matches the downward trend of the gas, thereby synchronizing the contact time between the gas along the first direction Z and the mixing components 211 in the same time period, achieving a better mixing effect.

[0055] As an example, the first group of hybrid components 211 can also be arranged in rows and columns. The first group of hybrid components 211 can include multiple rows and multiple columns.

[0056] In some examples, the multiple mixing elements 211 also include a second set of mixing elements 211, a third set of mixing elements 211, etc., having a spacing distribution trend along the third direction Y or circumferential direction, so as to contact and mix with the incoming gas from multiple directions.

[0057] By setting a mixing chamber 200 between the ion beam generator 100 and the etching reaction chamber 300, and setting multiple mixing elements 211 in the mixing chamber 200, the reaction gas and ion beam entering the receiving cavity 203 of the mixing chamber 200 are mixed. The mixing elements 211 have a radial dimension reduction trend, which increases the residence time of the gas and thus improves the mixing uniformity. Based on the distribution trend of the reaction gas and ion beam entering through the air inlet 204, at least a portion of the multiple mixing elements 211 are arranged to decrease in distance from the middle to both ends along the second direction X with the first connecting plate 201. This makes the contact time between the gas along the first direction Z and the mixing elements 211 synchronized within the same time period, achieving a better mixing effect.

[0058] In one embodiment of this application, the ion beam generator 100 includes a first gas supply 110, a processing chamber 120, and a sensing electrode 130. The first gas supply 110 is connected to the processing chamber 120 and supplies processing gas into the processing chamber 120. A high-voltage electric field is generated within the processing chamber 120 to generate plasma from the processing gas. The sensing electrode 130 is located at the outlet end of the ion beam generator 100 and enables the plasma to form an ion beam. The processing gas enters the processing chamber 120 through the first gas supply 110. Under the action of high voltage, gas molecules are ionized to generate plasma, which contains free electrons, positive ions, and neutral particles. The high-voltage electric field within the processing chamber 120 further accelerates the charged particles and confines the plasma through a magnetic or electric field to prevent its diffusion. Under the action of the sensing electrode 130 at the outlet end, the positive ions in the plasma are directionally focused to form a high-energy, high-density ion beam. The sensing electrode 130 achieves collimation and energy control of the ion beam by adjusting the electric field gradient.

[0059] In some examples, the processing gas can be chlorine, argon, or nitrogen, etc. The generated ion beam can be Ar... + Or O + Or cl-.

[0060] In some examples, the high voltage can be from several thousand volts to tens of thousands of volts.

[0061] In some examples, the high-voltage electric field can be a radio frequency (RF) or DC electric field.

[0062] In some examples, the sensing electrode 130 may include an electrostatic field lens or a magnetic field coil.

[0063] For example, the first gas supply unit 110 is sealed to the processing chamber 120 via a pipe, and the gas flow rate and pressure are precisely controlled, for example by a mass flow meter, to ensure the stability of plasma generation.

[0064] For example, the processing chamber 120 is typically configured with high-voltage electrodes to generate a uniform electric field, and a magnetic field coil is integrated into part of the system to enhance ionization efficiency. In one example, the magnetic field coil may be a Hall effect source.

[0065] In one example, the high-voltage electrode may include a parallel plate or a radio frequency coil.

[0066] For example, the sensing electrode 130 is located at the outlet end of the processing chamber 120 and may include multi-stage electrostatic lenses and scanning deflection devices for focusing the ion beam and adjusting its trajectory.

[0067] In one example, an electrostatic lens may include a single lens or a quadrupole lens.

[0068] In one embodiment, the first gas supply unit 110 may include a first gas source, a first gas line, and a first valve. The first gas source stores the processed gas. One end of the first gas line is connected to the first gas source. The first valve is installed in the first gas line. The first valve may be an on / off valve and / or a flow control valve. The first gas is supplied to the reaction chamber through the first gas line.

[0069] The substrate 320 etching apparatus also includes a second gas supply 400 that supplies a reactive gas to the receiving cavity 203. According to an embodiment, the reactive gas may be a gas that reacts with ions and free radicals included in the plasma to form an etchant. For example, the reactive gas may include NH3.

[0070] The second gas supply unit 400 may include a second gas source, a second gas line, and a second valve. The second gas source stores the reaction gas. One end of the second gas line is connected to the second gas source, and the other end of the second gas line is connected to the inlet 204. The second valve is installed in the second gas line. The second valve may be an on / off valve and / or a flow control valve. The reaction gas is supplied to the receiving cavity 203 through the second gas line and the inlet 204.

[0071] Furthermore, in some embodiments of this application, the plurality of hybrid components 211 further includes another portion of hybrid components 211 arranged along the third direction Y. The distance between the end of the other portion of hybrid components 211 facing away from the first connecting plate 201 and the first connecting plate 201 is not equal, and the distance tends to decrease from the middle of the first connecting plate 201 to the two ends along the third direction Y. The first direction Z, the second direction X and the third direction Y are perpendicular to each other.

[0072] Exemplarily, the plurality of hybrid elements 211 also includes a second group of hybrid elements 211, which are arranged along a third direction Y. In one example, the second group of hybrid elements 211 may also be arranged in rows and columns. The second group of hybrid elements 211 may include multiple rows and multiple columns. The first group of hybrid elements 211 and the second group of hybrid elements 211 may overlap or some hybrid elements 211 may be repeated.

[0073] In some examples, the distance between the first connecting end of the second set of mixing components 211 and the first connecting plate 201 is along the third direction Y, and tends to decrease from the middle of the first connecting plate 201 towards both ends. This allows more mixing components 211 to match the arc of the gas descent, thereby synchronizing the contact time between the gas along the first direction Z and the mixing components 211 within the same time period, achieving a better mixing effect.

[0074] In one embodiment of this application, the stage 310 may include a body, electrodes, and a heater. The body supports a substrate 320. The substrate 320 is located on the top surface of the body. The body may generally have a disc-shaped form. According to an embodiment, the body may be formed of a dielectric material. Electrodes and a heater are disposed within the body. The electrodes are disposed on the heater.

[0075] The electrodes are connected to a power source (not shown). If a DC power source (not shown) is turned on, a DC current flows through the electrodes. The flow of DC current creates an electric field between the electrodes and the substrate 320 due to electrostatic force. This electric field attracts the substrate 320 to the main body.

[0076] The heater regulates the temperature of the substrate 320. The heater can heat the body to increase the temperature of the substrate 320 supported on the top surface of the body. The substrate 320 can be maintained at the temperature required for the process by the heat generated by the heater. Additionally, the heater can increase the temperature of the body to prevent impurities (e.g., oxide or nitride films) separated from the substrate 320 during processing from re-adhering to the substrate 320. The heater can be a heating element, such as tungsten. However, the type of heater is not limited to this, and various modifications and configurations using known heating elements are possible. Furthermore, unlike the example above, the heater may not be located within the body.

[0077] Furthermore, a cooling fluid channel (not shown) is formed within the body, through which cooling fluid flows. The cooling fluid flows along the cooling fluid channel (not shown) and can regulate the temperature of the body and the substrate 320.

[0078] Figure 3 This is a schematic diagram of the arrangement of multiple components 211 of the substrate 320 etching apparatus provided in the embodiments of this application.

[0079] like Figures 1 to 3 As shown, in some embodiments of this application, a plurality of hybrid components 211 are arranged in multiple rings around the center of the first connecting plate 201; the distance between the end of the plurality of hybrid components 211 facing away from the first connecting plate 201 and the first connecting plate 201 tends to decrease from the center to the circumference.

[0080] For example, the first connecting plate 201 and the second connecting plate 202 are arranged opposite to each other, and the air inlet 204 of the first connecting plate 201 is opposite to the center of the second connecting plate 202.

[0081] In some examples, multiple hybrid components 211 are distributed in multiple groups, with each group of hybrid components 211 arranged in a ring-shaped interval, and the multiple groups of hybrid components 211 are arranged radially at a common center.

[0082] In another example, the distance between the first connecting end of each set of hybrid components 211 and the first connecting plate 201 can be the same. From the center of the first connecting plate 201 radially towards the periphery of the first connecting plate 201, the distance between the first connecting end and the first connecting plate 201 decreases.

[0083] By having multiple mixing components 211 arranged in a ring-like pattern and the spacing between them and the first connecting plate 201 decreasing from the center to the circumference, the multiple mixing components 211 on the second connecting plate 202 are arranged in a bowl shape to contact the incoming gas, thereby improving the mixing effect.

[0084] Figure 4 for Figure 1 A schematic diagram of the structure of the intermediate hybrid component 211.

[0085] like Figures 1 to 4 As shown, in a specific embodiment of this application, the mixing component 211 includes a first wall 213 and a second wall 212 connected to each other along the second direction X. The first wall 213 and the second wall 212 enclose a mixing cavity 214. The distance between the first wall 213 and the first connecting plate 201 is less than the distance between the second wall 212 and the second connecting plate 202, and the second wall 212 is closer to the middle of the first connecting plate 201 than the first wall 213.

[0086] For example, the hybrid component 211 may have a regular structure such as a cone, frustum, pyramid or truncated pyramid or other irregular structure.

[0087] In one example, the central angles of the first wall 213 and the second wall 212 of the hybrid part 211 can be the same.

[0088] In another example, the mixing component 211 may include a third wall, with the first wall 213, the second wall 212, and the third wall enclosing a mixing cavity 214. The third wall is connected to the second connecting plate 202. The third wall is the first connecting end.

[0089] For example, there is a height difference between the first wall 213 and the second wall 212, and both the first wall 213 and the second wall 212 are connected to the second connecting plate 202. The length of the first wall 213 is longer than the length of the second wall 212.

[0090] In one example, the mixer 211 is located in the receiving cavity 203, with the first wall 213 facing the center of the first connection and the second wall 212 facing away from the center of the first connection relative to the first wall 213. This results in a gradient contact between the mixer 211 and the incoming gas, more closely resembling the arcuate trend of the incoming gas, facilitating gas mixing within the mixing cavity 214.

[0091] In some embodiments of this application, the first channel 220 is positioned on both sides of the mixing member 211 along the first direction Z.

[0092] For example, the mixing element 211 is provided with first channels 220 evenly distributed circumferentially. In one example, the number of first channels 220 is greater than the number of mixing elements 211.

[0093] In another example, the first channel 220 can be a strip-shaped or circular hole structure.

[0094] For example, along the first direction Z, the hybrid component 211 may partially block the first channel 220. Alternatively, the hybrid component 211 may block a portion of the first channel 220.

[0095] In some embodiments of this application, along the first direction Z, the first channel 220 is a hole structure, the first wall 213 is opposite to one first channel 220, and the second wall 212 is opposite to another first channel 220.

[0096] For example, the hybrid component 211 blocks a plurality of first channels 220 along the first direction Z. In one example, along the first direction Z, the projection from the first connecting plate 201 to the second connecting plate 202 results in a first wall 213 covering one first channel 220 and a second wall 212 covering another first channel 220.

[0097] In the embodiments of this application, the mixing component 211 blocks the first channel 220 along the first direction Z, which helps to reduce the outflow of insufficiently mixed gas from the first channel 220.

[0098] Furthermore, in some embodiments of this application, the mixing chamber 200 further includes a lifting mechanism connected to the mixing component 211, used to control the distance between the mixing component 211 and the first connecting plate 201.

[0099] For example, the lifting mechanism can be one or more components. As an example, the lifting mechanism may include structures such as a cylinder, an electric cylinder, a hydraulic cylinder, a lead screw nut, a linear motor, and a connecting rod.

[0100] In one example, the lifting mechanism can be directly connected to the hybrid component 211 or indirectly connected to the hybrid component 211.

[0101] In another example, the lifting mechanism may be fixedly connected to the hybrid component 211 or detachably connected to the hybrid component 211.

[0102] In the embodiments of this application, the distance between the mixing component 211 and the first connecting plate 201 is adjusted by a lifting mechanism to adapt to the gas entry curve caused by different air intake flow rates. For example, the greater the air intake flow rate of the air inlet 204, the greater the curvature of the arc of the gas in the receiving cavity 203. Consequently, the mixing component 211 at both ends or in the circumferential direction is raised by the lifting mechanism, thereby synchronizing the contact time between the gas along the first direction Z and the mixing component 211 within the same time period, achieving a better mixing effect.

[0103] In some embodiments of this application, the lifting mechanism includes a plurality of lifting components 230, and the hybrid component 211 is mounted on the second connecting plate 202 via the lifting components 230, with the lifting components 230 and the hybrid component 211 being opposite each other.

[0104] For example, the second connecting plate 202 is a single integral structure and its relative position to the first connecting plate 201 remains unchanged. The height of each hybrid component 211 is individually controlled by the lifting member 230.

[0105] In one example, the lifting component 230 can be a structure such as a cylinder, electric cylinder, hydraulic cylinder, lead screw nut, linear motor, or connecting rod.

[0106] By independently controlling the hybrid component 211 through the lifting component 230, the control accuracy and flexibility of the height of the hybrid component 211 are improved.

[0107] In one embodiment, the mixing assembly 210 includes multiple combination plates arranged in a ring shape, with the plates sharing a common center and radially spaced apart. The combination plates are connected to multiple mixing components 211. A lifting mechanism is connected between the combination plates and a second connecting plate 202, controlling the lifting and lowering of the combination plates to control the height of the multiple ring-shaped mixing components 211. The height of the multiple combination plates creates a trend where the height of the mixing components 211 increases from the center outwards. This facilitates control and reduces control costs.

[0108] Figure 5 This is a schematic diagram of the arrangement of multiple components 211 of the substrate 320 etching apparatus provided in the embodiments of this application.

[0109] like Figures 1 to 5 As shown, in some other embodiments of this application, the second connecting plate 202 includes multiple plates 221 extending along the third direction Y, the hybrid component 211 is installed on the plate 221, and the multiple plates 221 are spaced apart along the second direction X to form a first channel 220, with the first direction Z, the second direction X and the third direction Y being perpendicular to each other; the lifting mechanism includes multiple lifting components 230, and the lifting components 230 are connected to the plate 221.

[0110] For example, multiple plates 221 are spaced apart from each other and move independently. The lengths of the multiple plates 221 along the three directions may be the same or different.

[0111] In some examples, multiple lifting components 230 are provided in the etching reaction chamber 300. The lifting components 230 can be connected to the side wall of the etching reaction chamber 300 to adjust the height of the plate 221 relative to the first connecting plate 201, thereby adjusting the height of the mixing component 211.

[0112] As an example, one substrate 221 is mounted with one or more hybrid components 211. Along the second direction X, the plurality of substrates 221 tend to gradually approach the first connecting plate 201 from the middle to both ends.

[0113] In another example, a board 221 can be connected by one or more lifting elements 230.

[0114] Figure 6 This is another schematic diagram of the substrate 320 etching apparatus provided in some embodiments of this application.

[0115] like Figures 1 to 6 As shown, in some embodiments of this application, the substrate 320 etching apparatus having a mixing chamber 200 further includes a mounting plate 240, which is placed between the second connecting plate 202 and the etching reaction chamber 300. The mounting plate 240 includes a plurality of second channels 241, which are arranged in rows along the second direction X and in columns along the third direction Y. Along the second direction X, the plate 221 is arranged opposite to the second channels 241.

[0116] For example, the mounting plate 240 is arranged parallel to the first connecting plate 201. An intermediate cavity 242 is formed between the mounting plate 240 and the second connecting plate 202, and the intermediate cavity 242 communicates with the etching reaction chamber 300 and the mixing chamber 200.

[0117] In one example, mounting plate 240 includes one or more. Multiple mounting plates 240 are arranged parallel to each other along a first direction Z.

[0118] For example, the second channel 241 can be a structure such as a round hole, a strip, a square hole, a stepped hole, or a tapered hole.

[0119] In some examples, multiple second channels 241 are arranged in rows and columns along the second direction X, with the first channel 220 and the second channel 241 alternating, so that the plate 221 and the second channel 241 are positioned opposite each other. By alternating the first channel 220 and the second channel 241, the residence time of the gas entering the intermediate cavity 242 in the receiving cavity 203 is increased to a sufficient length, thereby improving the mixing uniformity.

[0120] In some embodiments of this application, the distance between the mounting plate 240 and the second connecting plate 202 is less than the distance between the second connecting plate 202 and the first connecting plate 201.

[0121] Some embodiments of this application provide a display panel manufacturing system, including the substrate 320 etching apparatus with a mixing chamber 200 as described above.

[0122] In some embodiments, display panel production is mainly divided into three stages: Array (array process), Cell (cell process), and Module (module process). The Array process includes display panel production equipment such as thin-film deposition equipment, photolithography equipment, and substrate 320 etching equipment with a mixing chamber 200. The thin-film deposition equipment includes chemical vapor deposition (CVD) and physical vapor deposition (PVD) equipment, used to form conductive or insulating thin films on the glass substrate 320. The photolithography equipment completes the transfer of circuit patterns using an exposure machine and a coating machine, achieving a resolution down to the micrometer level. The substrate 320 etching equipment with the mixing chamber 200 processes materials such as passivation layers.

[0123] The above description is merely a specific implementation of this application. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, modules, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. It should be understood that the protection scope of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the protection scope of this application.

Claims

1. A substrate etching apparatus having a mixing chamber, characterized in that, The device includes an ion beam generator, a mixing chamber, and an etching reaction chamber distributed along a first direction. The mixing chamber is connected between the ion beam generator and the etching reaction chamber. The mixing chamber includes a first connecting plate and a second connecting plate distributed along the first direction, a receiving cavity located between the first connecting plate and the second connecting plate, and a mixing assembly located within the receiving cavity. The first connecting plate includes an air inlet opened around its own center point. The ion beam generator and the mixing chamber are connected through the air inlet, and a reaction gas is introduced through the air inlet. The second connecting plate has a first channel extending along the first direction, and the first channel connects the mixing chamber and the etching reaction chamber. The mixing assembly includes multiple mixing components spaced apart from each other on the second connecting plate. Each mixing component includes a mixing cavity with an opening facing the first connecting plate. The dimensions of the mixing cavity along a second direction tend to decrease from the first connecting plate to the second connecting plate. The multiple mixing components include a portion of the mixing components arranged along the second direction. The distance between the end of the portion of the mixing components facing away from the first connecting plate and the first connecting plate is unequal, and the distance tends to decrease from the middle of the first connecting plate towards both ends along the second direction. The first direction intersects the second direction.

2. The substrate etching apparatus with a mixing chamber according to claim 1, characterized in that, The plurality of hybrid components includes another portion of the hybrid components arranged along a third direction. The distance between the end of the other portion of the hybrid components facing away from the first connecting plate and the first connecting plate is not equal, and the distance tends to decrease from the middle of the first connecting plate towards both ends along the third direction, wherein the first direction, the second direction and the third direction are perpendicular to each other.

3. The substrate etching apparatus with a mixing chamber according to claim 1, characterized in that, The plurality of hybrid components are arranged in multiple rings around the center of the first connecting plate; the distance between the end of the plurality of hybrid components facing away from the first connecting plate and the first connecting plate tends to decrease from the center to the circumference.

4. The substrate etching apparatus with a mixing chamber according to claim 1, characterized in that, The mixing component includes a first wall and a second wall connected to each other along the second direction. The first wall and the second wall enclose the mixing cavity. The distance between the first wall and the first connecting plate is less than the distance between the second wall and the first connecting plate, and the second wall is closer to the middle of the first connecting plate than the first wall. Preferably, along the first direction, the first channel is positioned on both sides of the mixing component; Preferably, along the first direction, the first channel includes a hole structure, the first wall is opposite to one of the first channels, and the second wall is opposite to another of the first channels.

5. The substrate etching apparatus with a mixing chamber according to any one of claims 1 to 4, characterized in that, The mixing chamber also includes a lifting mechanism connected to the mixing component, which is used to control the distance between the mixing component and the first connecting plate.

6. The substrate etching apparatus with a mixing chamber according to claim 5, characterized in that, The lifting mechanism includes multiple lifting components, and the hybrid component is mounted on the second connecting plate via the lifting components, with each lifting component and the hybrid component being opposite to the other.

7. The substrate etching apparatus with a mixing chamber according to claim 5, characterized in that, The second connecting plate includes multiple plates extending along a third direction. The hybrid component is mounted on the plate. The multiple plates are spaced apart along the second direction to form the first channel. The first direction, the second direction, and the third direction are perpendicular to each other. The lifting mechanism includes multiple lifting components, which are connected to the plate.

8. The substrate etching apparatus with a mixing chamber according to claim 7, characterized in that, It also includes a mounting plate, which is placed between the second connecting plate and the etching reaction chamber. The mounting plate includes a plurality of second channels, which are arranged in rows along the second direction and in columns along the third direction. Along the second direction, the plate and the second channels are alternately arranged.

9. The substrate etching apparatus with a mixing chamber according to claim 8, characterized in that, The distance between the mounting plate and the second connecting plate is less than the distance between the second connecting plate and the first connecting plate.

10. A display panel manufacturing system, characterized in that, The substrate etching apparatus having a mixing chamber as described in any one of claims 1 to 9.

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