Dry etching apparatus, protective member, and array substrate

Abstract

In the dry etching machine device, the protection component and the array substrate provided by the embodiments of the present application, the dry etching machine device comprises an etching chamber, a top cover component, a sealing component and a protection component. The top cover component comprises a bottom wall and a side wall connected to the periphery of the bottom wall, and the top cover component, the bottom wall and the side wall form an accommodation space. The side wall forms a first opening, and the top cover component covers the first opening. There is a first gap between the side wall and the top cover component, and at least part of the sealing component is located in the first gap and arranged around the first opening. The protection component is located in the accommodation space, and the protection component comprises a connecting portion and an extending portion. The protection component is connected to at least one of the side wall and the top cover component through the connecting portion, and the extension direction of the connecting portion intersects with the extension direction of the extending portion. The extending portion is arranged in a spaced manner with the side wall, and the orthographic projection of the extending portion on a reference surface at least partially overlaps with the orthographic projection of the first gap on the reference surface. The service life of the sealing component is improved, and the use performance of the dry etching machine device is improved.

Description

Technical Field

[0001] This application belongs to the field of semiconductor manufacturing technology, and in particular relates to a dry etching machine, a protective component, and an array substrate. Background Technology

[0002] Organic light-emitting diodes (OLEDs) are organic thin-film electroluminescent devices. They have attracted great attention and are widely used in electronic display products due to their advantages such as simple fabrication process, low cost, low power consumption, high brightness, wide viewing angle, high contrast and flexible display capability. The PPI (pixel density) of a display panel can be increased by setting an isolation structure in the display panel. For details on the composition and preparation of the isolation structure (also known as a partition structure or isolation pillar), please refer to the relevant descriptions in patents PCT / CN2023 / 134518, 202310759370.2, 202310740412.8, 202310707209.0, 202311346196.5, 202311499823.9, 202310692671.8, and 202311091555.7. These details will not be elaborated upon here.

[0003] OLED display panels require an array substrate, including driving circuitry, to drive the light-emitting units to emit light. The array substrate comprises stacked semiconductor layers, conductive layers, and insulating layers, which need to be patterned to meet application requirements. Dry etching is one of the key processes for patterning these semiconductor, conductive, and insulating layers; therefore, improving the performance of the dry etching process is crucial for increasing the yield of the array substrate. Summary of the Invention

[0004] This application provides a dry etching machine, a protective component, and an array substrate, aiming to improve the performance of the dry etching machine.

[0005] An embodiment of the first aspect of this application provides a dry etching machine for fabricating an array substrate for a display panel. The dry etching machine includes: an etching chamber including a bottom wall and a side wall connected to the periphery of the bottom wall, the end of the side wall away from the bottom wall forming a first opening; a top cover component covering the first opening, the top cover component, the bottom wall, and the side wall forming a receiving space, a first gap between the side wall and the top cover component; a sealing component, at least a portion of which is located in the first gap and surrounding the first opening; and a protective component located in the receiving space, the protective component including a connecting portion and an extension portion, the connecting portion connecting to at least one of the side wall and the top cover component, the extension direction of the connecting portion intersecting the extension direction of the extension portion, wherein the extension portion is spaced apart from the side wall, the plane where the side wall is located is a reference plane, and the orthographic projection of the extension portion on the reference plane at least partially overlaps with the orthographic projection of the first gap on the reference plane.

[0006] According to an embodiment of the first aspect of this application, the dry engraving machine further includes a first protective plate and a second protective plate. The first protective plate covers at least a portion of the sidewall facing the receiving space, and the second protective plate covers at least a portion of the top cover component facing the receiving space. There is a second gap between the first protective plate and the second protective plate, and the orthographic projection of the second gap onto the reference plane at least partially overlaps with the orthographic projection of the extension onto the reference plane.

[0007] According to any of the foregoing embodiments of this application, the orthographic projection of the second gap onto the reference plane is located within the orthographic projection of the extension onto the reference plane.

[0008] According to any of the foregoing embodiments of this application, the orthographic projection of the first gap onto the reference plane and the orthographic projection of the second gap onto the reference plane at least partially overlap.

[0009] According to any of the foregoing embodiments of this application, the orthographic projection of the first gap onto the reference plane lies within the orthographic projection of the second gap onto the reference plane.

[0010] According to any of the foregoing embodiments of this application, the connecting portion is fixedly connected to the side wall, and the connecting portion, the extension portion and the side wall surround to form a receiving portion, the receiving portion including a second opening, the second opening being located on the side of the connecting portion away from the bottom wall.

[0011] According to any of the foregoing embodiments of this application, the extension is rotatably configured relative to the connecting portion so that the second opening becomes larger or smaller.

[0012] According to any of the foregoing embodiments of this application, there is an angle between the extending direction of the connecting portion and the extending direction of the extending portion, the angle is located in the receiving portion, and the angle is greater than or equal to 80 degrees and less than or equal to 100 degrees.

[0013] According to any of the foregoing embodiments of this application, the connecting portion includes a first sub-portion and a second sub-portion spaced apart on both sides of the extension portion, one of the first sub-portion and the second sub-portion being fixedly connected to the side wall, and the other of the first sub-portion and the second sub-portion being in contact with the top cover component.

[0014] According to any of the foregoing embodiments of this application, the first sub-part is fixedly connected to the side wall, the second sub-part is in contact with the top cover component, and the extension is rotatably connected relative to the first sub-part.

[0015] According to any of the foregoing embodiments of this application, the number of protective components is one or more, one protective component is disposed around the first opening, or multiple protective components are disposed at intervals around the first opening.

[0016] According to any of the foregoing embodiments of this application, the material of the protective component includes a high-temperature resistant material.

[0017] According to any of the foregoing embodiments of this application, the material of the protective part includes at least one of metal oxide, silicon oxide, and carbon oxide.

[0018] A second aspect of this application provides a protective component for a dry etching machine. The protective component includes: a connecting portion for connecting to at least one of a side wall of the dry etching machine and a top cover component of the dry etching machine; and an extension portion whose extension direction intersects the extension direction of the connecting portion, and the extension portion is spaced apart from the side wall. The plane containing the side wall is taken as a reference plane, and the extension portion is configured such that its orthographic projection on the reference plane at least partially overlaps with the orthographic projection of a first gap between the side wall and the top cover component on the reference plane.

[0019] A third aspect of this application provides an array substrate for a display panel, which is fabricated by a dry etching machine as described above.

[0020] In a dry etching apparatus provided in this application embodiment, the dry etching apparatus is used to prepare an array substrate for a display panel. The dry etching apparatus includes an etching chamber, a top cover component, a sealing component, and a protective component. The top cover component includes a bottom wall and side walls connected to the periphery of the bottom wall. The top cover component, the bottom wall, and the side walls enclose a receiving space, allowing the dry etching process to be performed within the receiving space. The side walls also enclose a first opening, allowing the etching mechanism and the substrate to be etched to enter the receiving space through the first opening. The top cover component covers the first opening to form a relatively closed dry etching space. There is a first gap between the side walls and the top cover component. At least a portion of the sealing component is located in the first gap and arranged around the first opening. By filling the gap between the side walls and the top cover component with the sealing component, leakage of reactive gases or byproducts during the etching process is reduced, ensuring a stable vacuum level inside the etching chamber.

[0021] The protective component is located within the receiving space. The protective component includes a connecting portion and an extension portion. The protective component is connected to at least one of the sidewall and top cover components via the connecting portion, and the extension direction of the connecting portion intersects with the extension direction of the extension portion. The extension portion is spaced apart from the sidewall, with the plane containing the sidewall serving as a reference plane. The orthographic projection of the extension portion onto the reference plane at least partially overlaps with the orthographic projection of the first gap onto the reference plane. The extension portion covers the projection area of ​​the first gap, which can prevent some etching gas from passing through the first gap and contaminating the sealing component. This reduces the possibility of the sealing component cracking or even being damaged due to corrosion by etching gas, thus improving the sealing effect. Simultaneously, it extends the service life of the sealing component, reduces maintenance frequency, and improves the performance of the dry etching machine. Attached Figure Description

[0022] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly introduced below. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the structure of a dry etching machine according to an embodiment of this application;

[0024] Figure 2 This is a schematic diagram of the structure of a dry etching machine according to another embodiment of this application;

[0025] Figure 3 This is a schematic diagram of the structure of a dry etching machine according to another embodiment of this application;

[0026] Figure 4 This is a cross-sectional view of a display panel provided in one embodiment of this application.

[0027] Figure label:

[0028] 10. Dry engraving equipment;

[0029] 100. Etching chamber; 110. Bottom wall; 111. Vent; 112. Molecular pump; 120. Side wall; 130. Accommodation space; 140. First opening; 150. First protective plate;

[0030] 200. Top cover component; 210. Air inlet; 220. Second protective plate;

[0031] 300. Etching mechanism;

[0032] 400. Support plate;

[0033] 500, Array substrate; 510, Isolation structure; 511, First sublayer; 512, Second sublayer; 513, Third sublayer; 514, Isolation opening; 520, Pixel definition layer; 521, Pixel limiting portion; 522, Pixel opening; 530, Light-emitting unit; 531, First electrode; 532, Light-emitting structure; 533, Second electrode; 540, Encapsulation layer; 541, First encapsulation layer;

[0034] 600, sealing component; 610, first gap; 620, second gap;

[0035] 700. Protective component; 710. Connecting part; 711. First sub-part; 712. Second sub-part; 720. Extension; 730. Receiving part; 740. Second opening;

[0036] A. Angle. Detailed Implementation

[0037] The features and exemplary embodiments of various aspects of this application will be described in detail below. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain this application and not to limit it. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples.

[0038] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes said element.

[0039] In the manufacturing process of display panels, dry etching or wet etching processes are typically used. Dry etching is a technique that uses plasma for thin-film etching. The chemical reactivity of gases is enhanced in a plasma state, allowing for the selection of suitable gases to react with materials and achieve the etching purpose. Furthermore, an electric field can guide and accelerate the physical etching process. Dry etching achieves good anisotropic etching, meaning it etches only in the vertical direction without lateral penetration, which helps to accurately replicate geometric patterns. It also possesses good etching selectivity and has minimal impact on resists and underlying materials.

[0040] Wet etching uses chemical solutions to remove surface material. It is isotropic, meaning that the amount of etching is the same around a given point, making it suitable for fast and economical processing. While wet etching is relatively simple and low-cost, it has lower precision and makes it difficult to control linewidth and obtain extremely fine structures.

[0041] OLED display panels require an array substrate including a driving circuit to drive the light-emitting units to emit light. The array substrate includes stacked semiconductor layers, conductive layers, and insulating layers. For example, the array substrate may include a substrate and a first conductive layer, a second conductive layer, and a third conductive layer stacked on one side of the substrate. An insulating layer is disposed between adjacent conductive layers. Exemplarily, a pixel circuit is disposed on the array substrate, and the pixel driving circuit includes transistors and storage capacitors. The transistor includes a semiconductor, a gate, a source, and a drain. The source and drain can be connected to the semiconductor through vias in the insulating layer. The storage capacitor includes a first electrode and a second electrode. As an example, the gate and the first electrode can be located in the first conductive layer, the second electrode can be located in the second conductive layer, and the source and drain can be located in the third conductive layer. Dry etching processes may be used when fabricating the vias of the first conductive layer, the second conductive layer, the third conductive layer, the semiconductor, and the insulating layer.

[0042] In related technologies, plasma etching machines (gCP) are typically used to process the substrate to be etched. A plasma etching machine is a semiconductor manufacturing device that uses plasma (ionized gas) to selectively remove materials, and it is a core process in dry etching. It precisely transfers the pattern from the photoresist mask to the surface of a substrate (such as a silicon wafer or glass substrate). It features high precision, high anisotropy, low damage to the mask and underlying materials, and suitability for complex three-dimensional structures.

[0043] The substrate to be etched is placed in the vacuum chamber of the etching machine, and a plasma source is placed on the substrate. After the top cover is closed, etching gas is introduced into the reaction chamber through the air inlet of the top cover, and a high-frequency current is introduced into the coil electrodes of the etching mechanism, causing the etching gas to ionize and form plasma. The plasma bombards the substrate to be etched, thereby completing the etching process. In the dry etching process of the existing display panel manufacturing industry, when the substrate is transferred from other processes into the vacuum chamber for etching, the etching process uses gases such as chlorine (CL2), carbon tetrafluoride (CF4), sulfur hexafluoride (SF6), and oxygen (O2). The generated plasma can cause corrosion of the sealing ring between the top cover and the chamber body.

[0044] The sealing ring is mainly used to connect the top cover plate and the chamber body, serving a sealing function. After a period of use, the sealing ring will develop cracks and wear due to gas corrosion, resulting in a deterioration in the sealing effect. Furthermore, the sealing ring can be corroded by plasma, producing byproducts that can fall into the chamber body, causing etching residue and leading to defective etched products.

[0045] Therefore, there is an urgent need for a dry engraving machine with a simple structure to further improve its performance.

[0046] To better understand this application, the dry etching machine, protective components, and array substrate of the embodiments of this application will be described in detail below with reference to the accompanying drawings. In the drawings, for ease of drawing, the dimensions in the drawings are not necessarily proportional to the actual dimensions.

[0047] Figure 1 This is a schematic diagram of the structure of a dry etching machine according to an embodiment of this application; Figure 2 This is a schematic diagram of the structure of a dry etching machine according to another embodiment of this application; Figure 3 This is a schematic diagram of the structure of a dry etching machine according to another embodiment of this application.

[0048] like Figures 1 to 3 As shown, an embodiment of the first aspect of this application provides a dry etching apparatus 10 for preparing an array substrate 500 for a display panel. The dry etching apparatus 10 includes an etching chamber 100, a top cover component 200, a sealing component 600, and a protective component 700.

[0049] The top cover component 200 includes a bottom wall 110 and a side wall 120 connected to the periphery of the bottom wall 110. One end of the side wall 120 away from the bottom wall 110 forms a first opening 140. The top cover component 200 covers the first opening 140. The top cover component 200, bottom wall 110, and side wall 120 together form a receiving space 130. A first gap 610 exists between the side wall 120 and the top cover component 200. At least a portion of the sealing component 600 is located in the first gap 610 and is disposed around the first opening 140. A protective component 700 is located in the receiving space 130. The protective component 700 includes a connecting portion 710 and an extension portion 720. The connecting portion 710 connects to at least one of the side wall 120 and the top cover component 200. The extending direction of the connecting portion 710 intersects the extending direction of the extension portion 720. The extension 720 is spaced apart from the side wall 120, with the plane of the side wall 120 serving as the reference plane. The orthographic projection of the extension 720 on the reference plane at least partially overlaps with the orthographic projection of the first gap 610 on the reference plane.

[0050] In a dry etching machine 10 provided in this application embodiment, the dry etching machine 10 includes an etching chamber 100, a top cover component 200, a sealing component 600, and a protective component 700. The top cover component 200 includes a bottom wall 110 and side walls 120 connected to the periphery of the bottom wall 110. The top cover component 200, the bottom wall 110, and the side walls 120 enclose a receiving space 130, allowing the dry etching process to be performed in the receiving space 130. The side walls 120 also enclose a first opening 140, allowing the etching mechanism 300 and the substrate to be etched to enter the receiving space 130 through the first opening 140. The top cover component 200 covers the first opening 140 to form a relatively enclosed dry etching space. There is a first gap 610 between the side wall 120 and the top cover component 200. At least part of the sealing component 600 is located in the first gap 610 and is arranged around the first opening 140. The sealing component 600 fills the gap between the side wall 120 and the top cover component 200, reduces the leakage of reaction gas or by-products during the etching process, and ensures the stability of the vacuum inside the etching chamber 100.

[0051] The protective component 700 is located in the receiving space 130. The protective component 700 includes a connecting portion 710 and an extension portion 720. The protective component 700 is connected to at least one of the side wall 120 and the top cover component 200 via the connecting portion 710. The extending direction of the connecting portion 710 intersects the extending direction of the extension portion 720. The extension portion 720 is spaced apart from the side wall 120, with the plane of the side wall 120 serving as a reference plane. The orthographic projection of the extension portion 720 onto the reference plane at least partially overlaps with the orthographic projection of the first gap 610 onto the reference plane. The extension portion 720 covers the projection area of ​​the first gap 610, which can prevent some etching gas from passing through the first gap 610 and contaminating the sealing component 600. This reduces the possibility that the sealing component 600 may crack or even be damaged due to corrosion by etching gas, resulting in a deterioration in the sealing effect. Simultaneously, it increases the service life of the sealing component 600, reduces the maintenance frequency, and improves the performance of the dry etching machine 10.

[0052] Optionally, the protective component 700 being connected to at least one of the side wall 120 and the top cover component 200 via the connecting portion 710 can be understood as follows: the connecting portion 710 may be connected only to the side wall 120, or only to the top cover component 200; or the connecting portion 710 may be located on both sides of the extension portion 720 and simultaneously connected to the side wall 120 and the top cover component 200. The connection method of the connecting portion 710 is not limited, as long as the extension portion 720 can cover the first gap 610 and prevent some etching gas from entering the first gap 610 and contaminating the sealing component 600. The specific configuration depends on the process requirements.

[0053] Optionally, dry etching equipment 10 can be classified according to the plasma generation method into capacitively coupled plasma etching (CCP), inductively coupled plasma etching (ICP), electron cyclotron resonance plasma etching (ECR), and reactive ion etching (RIE).

[0054] Optionally, dry etching can be used to fabricate structures such as gates, data signal lines, scan signal lines, or vias on the insulating layer of the array substrate 500.

[0055] Optionally, the dry etching machine 10 may also include a support carrier plate 400, which is used to support the substrate to be etched.

[0056] Optionally, the support carrier 400 can be a glass substrate, which gives the support carrier 400 good structural strength and rigidity, as well as advantages such as low manufacturing cost, high efficiency and smooth surface.

[0057] Optionally, the etching chamber can be a vacuum chamber to provide a vacuum environment for the dry etching process.

[0058] Optionally, the top cover component 200 is provided with an air inlet 210 that penetrates the top cover component 200, so as to facilitate the introduction of etching gas from the air inlet 210 into the accommodating space 130 to realize the dry etching process.

[0059] Optionally, there may be multiple air inlets 210, which are arranged in rows and columns on the top cover component 200. By providing multiple air inlets 210, the air intake can be increased, and the uniformity of the etching gas distribution within the accommodating space 130 can be improved, thereby enhancing the uniformity of etching and improving the yield of the array substrate 500.

[0060] Optionally, the bottom wall 110 has a through-hole vent 111. By providing the vent 111, the gas in the accommodating space 130 can be discharged. The vent 111 is provided on the bottom wall 110 and is located on the side of the substrate to be etched away from the etching mechanism 300, which can reduce the impact of venting on the dry etching process rate in the accommodating space 130.

[0061] When the bottom wall 110 is provided with vent holes 111, the gas flows out through the vent holes 111, resulting in a higher gas velocity above the vent holes 111. Under these conditions, the plasma velocity towards the substrate to be etched will be higher, leading to a higher etching rate. Similarly, the gas velocity at other locations may be lower, resulting in a lower plasma velocity towards the substrate to be etched and a lower etching rate. This can lead to a higher etching rate for the substrate near the vent holes 111 compared to other locations, resulting in poor etching uniformity and affecting the yield of the array substrate 500.

[0062] Optionally, the dry etching machine 10 also includes a molecular pump 112, which is located outside the receiving space 130 and connected to the exhaust port 111. By setting the molecular pump 112, the exhaust speed can be controlled, thereby improving the stability of the etching process.

[0063] Optionally, the dry etching apparatus 10 also includes an RF generator, which can provide a high-frequency electric field to excite gas ionization.

[0064] Optionally, the etching mechanism 300 also includes an excitation electrode, which can generate plasma by passing current through the excitation electrode, and the substrate to be etched can be etched by the plasma.

[0065] Optionally, the etching chamber 100 can be shaped in various ways, for example, it can be a quadrangular prism. Since the display panel is usually rectangular, the substrate to be etched is usually rectangular. Setting the etching chamber 100 as a quadrangular prism makes the shape of the etching chamber 100 more compatible with the shape of the substrate to be etched, improving the etching effect while reducing space waste.

[0066] Optionally, the sealing component 600 can be made of at least one of rubber, polytetrafluoroethylene, or ceramic composite materials. These materials are inexpensive, provide good sealing, and are easy to maintain and replace regularly.

[0067] Optionally, the working process of the dry etching machine 10 is as follows:

[0068] First, the etching chamber 100 is evacuated to reduce the pressure to within the required process range. Then, a reactive gas (such as Cl2 for etching silicon and CF4 for etching SiO2) is injected. The plasma is then excited, and radio frequency energy ionizes the gas, generating active ions, such as chloride ions (Cl...). + ) and fluoride ions (F - The material is then subjected to etching, where active ions react chemically with the material to generate volatile products, such as silicon tetrachloride (SiCl4). Alternatively, physical bombardment can be used, where high-energy ions vertically bombard the material surface to enhance anisotropy. Finally, byproducts are removed, which can be done using a vacuum pump to evacuate the reaction products and keep the chamber clean.

[0069] Optionally, etching can be divided into chemical etching and physical etching. Chemical etching involves active free radicals reacting with the material surface to generate volatile products. For example, CF4 plasma reacts with SiO2 to generate SiF4 and CO2.

[0070] Physical etching involves bombarding the material surface with high-energy ions, directly stripping atoms through momentum transfer. This mode dominates anisotropic etching.

[0071] Optionally, the dry etching equipment 10 can be used for integrated circuit manufacturing, for example, for gate etching via Cl2 / HBr / O2.

[0072] Optionally, the dry etching equipment 10 can be used in display panel manufacturing, such as in thin-film transistors, to pattern the anode using Cl2 / O2 plasma etching. It can also be used to create openings in the insulating layer, for example, by etching a planarization layer and a pixel definition layer using CF4 / CHF3 to protect the underlying metal wiring. It can also be used to fabricate fine metal masks (FMMs).

[0073] In some optional embodiments, the dry engraving machine 10 further includes a first protective plate 150 and a second protective plate 220. The first protective plate 150 covers at least a portion of the sidewall 120 facing the receiving space 130, and the second protective plate 220 covers at least a portion of the top cover component 200 facing the receiving space 130. A second gap 620 is provided between the first protective plate 150 and the second protective plate 220, and the orthographic projection of the second gap 620 on the reference plane at least partially overlaps with the orthographic projection of the extension 720 on the reference plane.

[0074] Optionally, the orthographic projection of the second gap 620 onto the reference plane is located within the orthographic projection of the extension 720 onto the reference plane, so that the second gap 620 not covered by the first protective plate 150 and / or the second protective plate 220 can be blocked by the extension 720, further enhancing the protection effect on the sealing component 600, the etching chamber 100 and the top cover component 200.

[0075] Optionally, the first protection plate 150 and / or the second protection plate 220 can be detached to facilitate individual replacement of damaged components, thereby reducing maintenance costs.

[0076] Optionally, the materials of the first protective plate 150 and / or the second protective plate 220 may include high-temperature resistant materials.

[0077] Optionally, the material of the first protective plate 150 and / or the second protective plate 220 includes at least one of metal oxides, silicon oxides, and carbon oxides. For example, the material of the protective component 700 can be one of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon carbide (SiC), etc. The above materials are inexpensive and have good high-temperature resistance.

[0078] In these alternative embodiments, the above-mentioned material is resistant to plasma bombardment and high-temperature oxidation, thereby extending the service life of the protective component 700.

[0079] In these optional embodiments, a first protective plate 150 is added to cover and protect the sidewall 120 of the etching chamber 100, and a second protective plate 220 is provided to cover the top cover component 200, thereby reducing the corrosion of the etching chamber 100 and the top cover component 200 by etching gases. A second gap 620 is provided between the first protective plate 150 and the second protective plate 220, and the orthographic projection of the second gap 620 on the reference plane at least partially overlaps with the orthographic projection of the extension 720 on the reference plane. The second gap 620 facilitates the opening and closing of the top cover component 200, while reserving expansion space for the first protective plate 150 and the second protective plate 220, reducing the possibility of deformation or cracking of the first protective plate 150 and the second protective plate 220 due to thermal stress, and improving the service life of the dry etching machine 10. The overlapping projections of the second gap 620 and the extension 720 form a multi-level protective barrier, further intercepting splashed etching byproducts and reducing contamination of the main structure of the etching chamber 100.

[0080] In some alternative embodiments, the orthographic projections of the first gap 610 onto the reference plane and the orthographic projections of the second gap 620 onto the reference plane at least partially overlap.

[0081] Optionally, the orthographic projection of the first gap 610 onto the reference plane lies within the orthographic projection of the second gap 620 onto the reference plane.

[0082] In these alternative embodiments, the orthographic projections of the first gap 610 and the second gap 620 onto the reference plane at least partially overlap to facilitate the opening and closing of the top cover component 200 and reduce the impact of the first protective plate 150 and the second protective plate 220 on the top cover component 200.

[0083] In some alternative embodiments, the connecting portion 710 is fixedly connected to the side wall 120, and the connecting portion 710, the extension portion 720 and the side wall 120 surround to form a receiving portion, the receiving portion 730 including a second opening 740, the second opening 740 being located on the side of the connecting portion 710 away from the bottom wall 110.

[0084] In these alternative embodiments, the connecting portion 710 can be fixedly connected to the side wall 120. Some of the etching gas enters the first gap 610 through the second opening 740 and causes a certain degree of corrosion to the sealing component 600. The receiving portion 730 can temporarily store the products that fall off the sealing component 600 after corrosion, reducing the possibility that the products will fall back onto the surface of the array substrate 500 in the receiving space 130, thereby affecting the yield of the array substrate 500.

[0085] In some optional embodiments, there is an angle A between the extending direction of the connecting portion 710 and the extending direction of the extending portion 720, and the angle A is located in the receiving portion 730. The angle A is greater than or equal to 80 degrees and less than or equal to 100 degrees.

[0086] In these optional embodiments, the included angle A can be equal to 80 degrees, 85 degrees, 90 degrees, 95 degrees, 100 degrees, etc. Optionally, the problem of poor protection of the sealing component 600 caused by an excessively large included angle A can be improved, while ensuring that the included angle A is not too small, thereby facilitating manufacturing and cleaning of reaction byproducts. For example, when the included angle A is 90 degrees, the extension 720 can be arranged nearly parallel to the sidewall 120, resulting in better protection of the sealing component 600.

[0087] In some alternative embodiments, such as Figure 2 and Figure 3 As shown, the connecting portion 710 includes a first sub-portion 711 and a second sub-portion 712 spaced apart on both sides of the extension portion 720. One of the first sub-portion 711 and the second sub-portion 712 is fixedly connected to the side wall 120, and the other of the first sub-portion 711 and the second sub-portion 712 is in contact with the top cover component 200.

[0088] In these alternative embodiments, the first sub-part 711 is fixedly connected to the sidewall 120, and the second sub-part 712 is in contact with the top cover component 200; alternatively, the first sub-part 711 is in contact with the sidewall 120, and the second sub-part 712 is fixedly connected to the top cover component 200. This can further reduce the corrosion of the sealing component 600 caused by etching gas entering the first gap 610 from the second opening 740. Simultaneously, if one of the first sub-part 711 and the second sub-part 712 is fixedly connected to the sidewall 120, and the other is in contact with the top cover component 200, the influence of the protective component 700 on the opening and closing of the top cover component 200 can be reduced.

[0089] In some alternative embodiments, the number of protective components 700 is one or more, with one protective component 700 disposed around the first opening 140, or multiple protective components 700 disposed at intervals around the first opening 140.

[0090] In these alternative embodiments, a protective component 700 is disposed around the first opening 140, which can cover a larger area, improve the problem of insufficient local protection, and further enhance the protection of the sealing component 600.

[0091] In some alternative embodiments, multiple protective components 700 are spaced apart around the first opening 140, and only the damaged individual protective component 700 needs to be disassembled, which facilitates the routine maintenance and replacement of the protective components 700.

[0092] Optionally, the extension 720 is rotatably configured relative to the connecting portion 710 so that the second opening 740 can be enlarged or reduced.

[0093] Optionally, during maintenance and cleaning, the extension 720 can be rotated so that the included angle A is obtuse, thereby facilitating the cleaning of residual products in the receiving part 730 and further improving maintenance efficiency.

[0094] In some alternative embodiments, the material of the protective component 700 includes a high-temperature resistant material.

[0095] Optionally, the material of the protective component 700 includes at least one of metal oxides, silicon oxides, and carbon oxides. For example, the material of the protective component 700 can be one of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon carbide (SiC), etc. The above materials are inexpensive and have good high-temperature resistance.

[0096] In these alternative embodiments, the above-mentioned material is resistant to plasma bombardment and high-temperature oxidation, thereby extending the service life of the protective component 700.

[0097] A second aspect of this application provides a protective component 700 for a dry etching machine 10. The protective component 700 includes a connecting portion 710 and an extension portion 720. The connecting portion 710 is used to connect to at least one of the side wall 120 of the dry etching machine 10 and the top cover component 200 of the dry etching machine 10. The extension direction of the connecting portion 710 intersects the extension direction of the extension portion 720, and the extension portion 720 is spaced apart from the side wall 120. The plane containing the side wall 120 is taken as a reference plane, and the extension portion 720 is configured such that its orthographic projection on the reference plane at least partially overlaps with the orthographic projection of a first gap 610 between the side wall 120 and the top cover component 200 on the reference plane.

[0098] In a protective component 700 provided in this application embodiment, the protective component 700 is used in a dry etching machine 10. The protective component includes a connecting portion 710 and an extension portion 720. The connecting portion 710 is used to connect to at least one of the side wall 120 of the dry etching machine 10 and the top cover component 200 of the dry etching machine 10. The extension direction of the connecting portion 710 intersects the extension direction of the extension portion 720. The extension portion 720 is spaced apart from the side wall 120, and the orthographic projection of the extension portion 720 on the reference plane at least partially overlaps with the orthographic projection of the first gap 610 on the reference plane. The extension portion 720 covers the projection area of ​​the first gap 610, which can block some of the etching gas from contaminating the sealing component 600 of the dry etching machine 10, reducing the possibility that the sealing component 600 may crack or even be damaged due to corrosion by the etching gas, resulting in a deterioration of the sealing effect. At the same time, it improves the service life of the sealing component 600, reduces the possibility of the array substrate 500 being contaminated by the products generated by the corrosion of the sealing component 600 by the etching gas, and improves the manufacturing yield of the array substrate 500.

[0099] In some alternative embodiments, the connecting portion 710 is fixedly connected to the side wall 120, and the connecting portion 710, the extension portion 720 and the side wall 120 surround to form a receiving portion 730, the receiving portion 730 including a second opening 740 located on the side of the connecting portion 710 away from the bottom wall 110.

[0100] In these alternative embodiments, the connecting portion 710 can be fixedly connected to the side wall 120. Some of the etching gas enters the first gap 610 through the second opening 740 and causes a certain degree of corrosion to the sealing component 600. The receiving portion 730 can temporarily store the products that fall off the sealing component 600 after corrosion, reducing the possibility that the products will fall back onto the surface of the array substrate 500 in the receiving space 130, thereby affecting the yield of the array substrate 500.

[0101] In some optional embodiments, there is an angle A between the extending direction of the connecting portion 710 and the extending direction of the extending portion 720, and the angle A is located in the receiving portion 730. The angle A is greater than or equal to 80 degrees and less than or equal to 100 degrees.

[0102] In these optional embodiments, the included angle A can be equal to 80 degrees, 85 degrees, 90 degrees, 95 degrees, 100 degrees, etc. Optionally, the problem of poor protection of the sealing component 600 caused by an excessively large included angle A can be improved, while ensuring that the included angle A is not too small, thereby facilitating manufacturing and cleaning. For example, when the included angle A is 90 degrees, the extension 720 can be arranged nearly parallel to the sidewall 120, resulting in better protection of the sealing component 600.

[0103] In some alternative embodiments, the connecting portion 710 includes a first sub-portion 711 and a second sub-portion 712 spaced apart on both sides of the extension portion 720. One of the first sub-portion 711 and the second sub-portion 712 is fixedly connected to the sidewall 120, and the other of the first sub-portion 711 and the second sub-portion 712 is in contact with the top cover component 200.

[0104] In these optional embodiments, the first sub-part 711 is fixedly connected to the sidewall 120, and the second sub-part 712 is in contact with the top cover component 200; alternatively, the first sub-part 711 is in contact with the sidewall 120, and the second sub-part 712 is fixedly connected to the top cover component 200. This can further reduce the corrosion of the sealing component 600 caused by etching gas entering the first gap 610 from the second opening. Simultaneously, if one of the first sub-part 711 and the second sub-part 712 is fixedly connected to the sidewall 120, and the other is in contact with the top cover component 200, the influence of the protective component 700 on the opening and closing of the top cover component 200 can be reduced.

[0105] In some alternative embodiments, the number of protective components 700 is one or more, with one protective component 700 disposed around the first opening 140, or multiple protective components 700 disposed at intervals around the first opening 140.

[0106] In these alternative embodiments, a protective component 700 is disposed around the first opening 140, which can cover a larger area, improve the problem of insufficient local protection, and further enhance the protection of the sealing component 600.

[0107] In some alternative embodiments, multiple protective components 700 are spaced apart around the first opening 140, and only the damaged individual protective component 700 needs to be disassembled, which facilitates the routine maintenance and replacement of the protective components 700.

[0108] Optionally, the extension 720 is rotatably configured relative to the connecting portion 710 so that the second opening 740 can be enlarged or reduced.

[0109] Optionally, during maintenance and cleaning, the extension 720 can be rotated so that the included angle A is obtuse, thereby facilitating the cleaning of residual products in the receiving part 730 and further improving maintenance efficiency.

[0110] In some alternative embodiments, the material of the protective component 700 includes a high-temperature resistant material.

[0111] Optionally, the material of the protective component 700 includes at least one of metal oxides, silicon oxides, and carbon oxides. For example, the material of the protective component 700 can be one of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon carbide (SiC), etc. The above materials are inexpensive and have good high-temperature resistance.

[0112] In these alternative embodiments, the above-mentioned material is resistant to plasma bombardment and high-temperature oxidation, thereby extending the service life of the protective component 700.

[0113] A third aspect of this application provides an array substrate 500 for a display panel, the array substrate 500 being fabricated by the dry etching equipment 10 as described above.

[0114] In an embodiment of this application, an array substrate 500 for a display panel is provided. The array substrate 500 is fabricated using a dry etching apparatus 10 as described above. The dry etching apparatus 10 includes an etching chamber 100, a top cover component 200, a sealing component 600, and a protective component 700. The top cover component 200 includes a bottom wall 110 and side walls 120 connected to the periphery of the bottom wall 110. The top cover component 200, the bottom wall 110, and the side walls 120 enclose a receiving space 130, allowing the dry etching process to be performed within the receiving space 130. The side walls 120 also enclose a first opening 140, allowing the etching mechanism 300 and the substrate to be etched to enter the receiving space 130 through the first opening 140. The top cover component 200 covers the first opening 140 to form a relatively enclosed dry etching space. A first gap 610 exists between the sidewall 120 and the top cover component 200. At least a portion of the sealing component 600 is located in the first gap 610 and is disposed around the first opening 140. The sealing component 600 fills the gap between the sidewall 120 and the top cover component 200, reducing the leakage of reactive gases or byproducts during etching and ensuring a stable vacuum level inside the etching chamber 100. A protective component 700 is located in the receiving space 130. The protective component includes a connecting portion 710 and an extension portion 720. The protective component 700 is connected to at least one of the sidewall 120 and the top cover component 200 via the connecting portion 710. The extension direction of the connecting portion 710 intersects the extension direction of the extension portion 720. The extension portion 720 is spaced apart from the sidewall 120, with the plane containing the sidewall 120 serving as a reference plane. The orthographic projection of the extension portion 720 onto the reference plane at least partially overlaps with the orthographic projection of the first gap 610 onto the reference plane. The extension 720 covers the projected area of ​​the first gap 610, which can block some of the etching gas from passing through the first gap 610 and contaminating the sealing component 600. This reduces the possibility that the sealing component 600 may crack or even be damaged due to corrosion by the etching gas, resulting in a deterioration in the sealing effect. At the same time, it improves the service life of the sealing component 600, reduces the possibility of the formation of byproducts from the etching gas corrosion of the sealing component 600 contaminating the array substrate 500, and improves the manufacturing yield of the array substrate 500.

[0115] An embodiment of the fourth aspect of this application also provides a display panel, including the array substrate 500 provided in any of the third aspect embodiments described above, such as... Figure 4As shown, the display panel includes an array substrate 500 and an isolation structure 510. The isolation structure 510 is disposed on one side of the array substrate 500, and the isolation structure 510 encloses an isolation opening 514 for accommodating a light-emitting unit 530. The isolation structure 510 includes a first sub-layer 511 and a second sub-layer 512 stacked in a direction away from the array substrate 500. The second sub-layer 512 protrudes relative to the first sub-layer 511 toward the isolation opening 514. The isolation structure 510 also includes a third sub-layer 513 located on the side of the first sub-layer 511 facing the array substrate 500, and the third sub-layer 513 protrudes relative to the first sub-layer 511 toward the isolation opening 514.

[0116] Optionally, the isolation structure 510 can be used to participate in dividing the sub-pixels of the display panel. This eliminates the need for a high-precision mask when depositing the light-emitting unit 530 of the display panel, for example, eliminating the need for a high-precision fine metal mask (FMM) when depositing the light-emitting unit 530, thereby significantly reducing the manufacturing cost of the display panel.

[0117] Optionally, the display panel further includes a pixel definition layer 520, which is located on one side of the array substrate 500. The pixel definition layer 520 includes a pixel defining portion 521 and a pixel opening 522 formed by the pixel defining portion 521. The orthographic projection of the pixel opening 522 onto the substrate and the orthographic projection of the isolation opening 524 onto the array substrate 500 at least partially overlap.

[0118] The isolation structure 510 is located on the side of the pixel limiting portion 521 away from the array substrate 500, or the pixel limiting portion 521 also surrounds and forms a clearance opening, and the isolation structure 510 is located inside the clearance opening.

[0119] Optionally, the display panel further includes a light-emitting unit 530 located at least partially in the pixel opening 522. The light-emitting unit 530 includes a first electrode 531, a light-emitting structure 532, and a second electrode 533 stacked in a direction away from the array substrate 500. The material of the isolation structure 510 includes a conductive material, and the second electrode 533 is electrically connected to the isolation structure 510. The first electrode 531 and the second electrode 533 can be used to drive the light-emitting unit 530 to emit light. One of the first electrode 531 and the second electrode 533 is an anode, and the other is a cathode.

[0120] Optionally, the display panel may also include an encapsulation layer 540, which includes a first encapsulation layer 541, and the first encapsulation layer 541 includes an encapsulation portion located on the side of each second electrode 533 facing away from the array substrate 500.

[0121] Optionally, the first encapsulation layer 541 is an inorganic encapsulation layer 540. The inorganic encapsulation layer 540 can be prepared by chemical vapor deposition, which can improve the density of the first encapsulation layer 541 and thus improve the encapsulation effect of the encapsulation layer 540.

[0122] Optionally, the encapsulation layer 540 further includes a second encapsulation layer located on the side of the first encapsulation layer 541 facing away from the substrate. The material of the second encapsulation layer includes an organic material. That is, the second encapsulation layer is an organic encapsulation layer 540, which can be prepared by inkjet printing, allowing the encapsulation layer 540 to have a suitable thickness.

[0123] Optionally, the encapsulation layer 540 may further include a third encapsulation layer located on the side of the second encapsulation layer facing away from the substrate, and the material of the third encapsulation layer includes inorganic materials. That is, the third encapsulation layer is an inorganic encapsulation layer 540, and adding another inorganic encapsulation layer 540 outside the organic encapsulation layer 540 can further improve the encapsulation effect of the encapsulation layer 540.

[0124] Optionally, the first encapsulation layer 541 and the third encapsulation layer are made of the same material. This allows the first encapsulation layer 541 and the third encapsulation layer to be fabricated using the same equipment, simplifying the manufacturing process of the display panel.

[0125] Since the display panel of the embodiment of the fourth aspect of this application includes the array substrate 500 of any of the embodiments of the third aspect described above, the display panel of the embodiment of the fourth aspect of this application has the beneficial effects of the array substrate 500 of any of the embodiments of the third aspect described above.

[0126] The above description is merely a specific implementation of this application. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, modules, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here. It should be understood that the protection scope of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the protection scope of this application.

Claims

1. A dry etching machine, said dry etching machine being used to prepare an array substrate for a display panel, characterized in that, The dry etching machine includes: An etching chamber includes a bottom wall and a side wall connected to the periphery of the bottom wall, wherein the end of the side wall away from the bottom wall encloses a first opening; A top cover component is disposed over the first opening, and the top cover component, the bottom wall, and the side wall enclose a receiving space, with a first gap between the side wall and the top cover component; A sealing component, at least a portion of which is located in the first gap and disposed around the first opening; A protective component, located in the receiving space, includes a connecting portion and an extension portion. The connecting portion is connected to at least one of the side wall and the top cover component, and the extending direction of the connecting portion intersects the extending direction of the extension portion. The extension is spaced apart from the sidewall, with the plane of the sidewall serving as a reference plane. The orthographic projection of the extension on the reference plane at least partially overlaps with the orthographic projection of the first gap on the reference plane.

2. The dry engraving machine according to claim 1, characterized in that, The dry engraving machine further includes a first protective plate and a second protective plate, the first protective plate covering at least a portion of the sidewall surface facing the receiving space, and the second protective plate covering at least a portion of the top cover component surface facing the receiving space. Wherein, there is a second gap between the first protective plate and the second protective plate, and the orthographic projection of the second gap on the reference plane at least partially overlaps with the orthographic projection of the extension on the reference plane; Preferably, the orthographic projection of the second gap onto the reference plane lies within the orthographic projection of the extension onto the reference plane; Preferably, the material of the first protective plate and / or the second protective plate includes a high-temperature resistant material; Preferably, the material of the first protective plate and / or the second protective plate includes at least one of metal oxide, silicon oxide, and carbon oxide.

3. The dry engraving machine according to claim 2, characterized in that, The orthographic projections of the first gap onto the reference plane and the orthographic projections of the second gap onto the reference plane at least partially overlap; Preferably, the orthographic projection of the first gap onto the reference plane lies within the orthographic projection of the second gap onto the reference plane.

4. The dry engraving machine according to claim 1, characterized in that, The connecting part is fixedly connected to the side wall, and the connecting part, the extension part and the side wall together form a receiving part. The receiving part includes a second opening, which is located on the side of the connecting part away from the bottom wall.

5. The dry engraving machine according to claim 4, characterized in that, There is an angle between the extending direction of the connecting part and the extending direction of the extending part, the angle is located in the receiving part, and the angle is greater than or equal to 80 degrees and less than or equal to 100 degrees.

6. The dry engraving machine according to claim 1, characterized in that, The connecting portion includes a first sub-portion and a second sub-portion spaced apart on both sides of the extension portion. One of the first sub-portion and the second sub-portion is fixedly connected to the side wall, and the other of the first sub-portion and the second sub-portion is in contact with the top cover component.

7. The dry engraving machine according to claim 1, characterized in that, The number of protective components is one or more, with one protective component arranged around the first opening, or multiple protective components arranged at intervals around the first opening.

8. The dry engraving machine according to claim 1, characterized in that, The protective component is made of high-temperature resistant materials; Preferably, the material of the protective part includes at least one of metal oxide, silicon oxide, and carbon oxide.

9. A protective component for a dry engraving machine, characterized in that, The protective component includes: A connecting portion, the connecting portion being used to connect to at least one of the side wall of the dry etching machine and the top cover component of the dry etching machine; The extension portion, wherein the extending direction of the connecting portion intersects the extending direction of the extension portion, and the extension portion is spaced apart from the side wall; Wherein, the plane containing the sidewall is taken as the reference plane, and the extension is used to make the orthographic projection of the extension on the reference plane at least partially overlap with the orthographic projection of the first gap between the sidewall and the top cover component on the reference plane.

10. An array substrate for a display panel, characterized in that, The array substrate is prepared by the dry etching equipment described in any one of claims 1-9.

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