Plasma etching apparatus

Abstract

The application discloses a kind of plasma etching equipment, and plasma etching equipment is used to participate in the preparation of display panel, and plasma etching equipment includes: etching chamber, etching chamber includes chamber wall and the etching space formed by chamber wall, chamber wall includes mutually connected top wall, bottom wall and side wall, top wall and bottom wall are opposite in first direction, side wall is arranged between top wall and bottom wall, and the side of side wall towards etching space has side wall surface;First supply pipeline, first supply pipeline is connected with etching space, and first supply pipeline is used to supply processing gas or precursor gas of processing gas into etching space;Second supply pipeline, second supply pipeline is connected with etching space, and second supply pipeline is used to supply water vapor into etching space, wherein, at least part of second supply pipeline is arranged on the side of side wall towards etching space, and the extension direction of second supply pipeline arranged on side wall is parallel to at least part of side wall surface.

Description

Technical Field

[0001] This application belongs to the field of display technology, and in particular relates to a plasma etching device. Background Technology

[0002] Liquid crystal display (LCD) panels, organic light-emitting diode (OLED) panels, and display panels using light-emitting diode (LED) devices are widely used in various consumer electronics products such as mobile phones, televisions, personal digital assistants, digital cameras, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body, and wide range of applications, becoming the mainstream of display devices.

[0003] However, in the current display panel manufacturing process, plasma etching equipment consumes a lot of energy when it is working. Summary of the Invention

[0004] This application provides a plasma etching apparatus designed to reduce energy consumption during operation.

[0005] An embodiment of the first aspect of this application provides a plasma etching apparatus for use in the fabrication of a display panel. The plasma etching apparatus includes: an etching chamber, the etching chamber including a chamber wall and an etching space enclosed by the chamber wall, the chamber wall including a top wall, a bottom wall and a side wall connected to each other, the top wall and the bottom wall being opposite each other in a first direction, the side wall being disposed between the top wall and the bottom wall, and the side wall having a side wall surface on the side facing the etching space; a first supply pipe connected to the etching space, the first supply pipe being used to supply processing gas or a precursor gas of processing gas into the etching space; and a second supply pipe connected to the etching space, the second supply pipe being used to supply water vapor into the etching space, wherein at least a portion of the second supply pipe is arranged on the side wall facing the etching space, and the extension direction of the second supply pipe arranged on the side wall is parallel to at least a portion of the side wall surface.

[0006] According to an embodiment of the first aspect of this application, at least a portion of the second supply line disposed on the sidewall extends along a first direction, and / or, at least a portion of the second supply line disposed on the sidewall extends along a direction intersecting the first direction.

[0007] According to any of the foregoing embodiments of the first aspect of this application, the sidewall includes a first sidewall opposite to the first sidewall in a second direction, at least a portion of the second supply line disposed on the first sidewall extending along a third direction, and / or, the sidewall includes a second sidewall opposite to the second sidewall in a third direction, at least a portion of the second supply line disposed on the second sidewall extending along a second direction, wherein the first direction, the second direction and the third direction intersect each other.

[0008] According to any of the foregoing embodiments of the first aspect of this application, the top wall has a top wall surface on the side facing the etching space, a portion of the second supply line is arranged on the side of the top wall facing the etching space, and the extension direction of the second supply line arranged on the top wall is parallel to at least a portion of the top wall surface.

[0009] According to any of the foregoing embodiments of the first aspect of this application, the bottom wall has a bottom wall surface on the side facing the etching space, a portion of the second supply line is arranged on the side of the bottom wall facing the etching space, and the extension direction of the second supply line arranged on the bottom wall is parallel to at least a portion of the bottom wall surface.

[0010] According to any of the foregoing embodiments of the first aspect of this application, the second supply pipeline has an outlet, and in the direction near the outlet, the diameter of at least a portion of the second supply pipeline within the etching space gradually increases, and / or, the diameter of the second supply pipeline located within the etching space is greater than the diameter of the second supply pipeline located within the etching space.

[0011] According to any of the foregoing embodiments of the first aspect of this application, the material of the second supply conduit located within the etched space includes a thermally conductive material.

[0012] According to any of the foregoing embodiments of the first aspect of this application, the material of the second supply conduit located within the etching space includes at least one of copper, stainless steel, aluminum, and graphite.

[0013] According to any of the foregoing embodiments of the first aspect of this application, the plasma etching apparatus further includes a heating device disposed within the etching space, the heating device being used to heat the second supply pipeline and / or the gas within the etching space.

[0014] According to any of the foregoing embodiments of the first aspect of this application, at least a portion of the heating device is in contact with the outer wall of the second supply pipeline.

[0015] According to any of the foregoing embodiments of the first aspect of this application, the plasma etching apparatus further includes a temperature sensor disposed within the etching space, the temperature sensor being used to detect the temperature within the etching space.

[0016] According to any of the foregoing embodiments of the first aspect of this application, the plasma etching apparatus further includes a detection component for detecting gas information within the etching space.

[0017] According to any of the foregoing embodiments of the first aspect of this application, the detection component includes a pressure sensor for detecting the air pressure within the etching space.

[0018] According to any of the foregoing embodiments of the first aspect of this application, the detection component includes a humidity sensor for detecting the humidity of the gas within the etching space.

[0019] According to any of the foregoing embodiments of the first aspect of this application, the detection component includes a component detector, which is used to detect the gas composition and content within the etched space.

[0020] According to any of the foregoing embodiments of the first aspect of this application, the component detector includes at least one of a mass spectrometer and a Fourier transform infrared gas analyzer.

[0021] According to any of the foregoing embodiments of the first aspect of this application, the chamber wall is further provided with a transfer port, and the plasma etching apparatus further includes a purging assembly for purging gas or liquid leaking outward through the transfer port within the etching space.

[0022] According to any of the foregoing embodiments of the first aspect of this application, the purging assembly is used to spray dry inert gas to purge gas or liquid leaking outward through the transfer port within the etching space.

[0023] According to any of the foregoing embodiments of the first aspect of this application, the plasma etching apparatus further includes a transfer chamber connected to a transfer port, and a purging assembly disposed within the transfer chamber.

[0024] According to any of the foregoing embodiments of the first aspect of this application, the transfer chamber is provided with an exhaust port, and the purging assembly is used to purge the gas or liquid leaking out of the etching space through the transfer port to the exhaust port.

[0025] According to any of the foregoing embodiments of the first aspect of this application, a first communication port is provided on the top wall, and a first supply pipeline is used to supply processing gas or precursor gas of processing gas to the etching space through the first communication port. A second communication port is provided on the bottom wall, and a portion of the second supply pipeline enters the etching space through the second communication port.

[0026] According to any of the foregoing embodiments of the first aspect of this application, the plasma etching apparatus further includes a partition wall disposed within the etching space and connected to the chamber wall. The partition wall divides the etching space into a first space located on the side of the partition wall facing the top wall and a second space located on the side of the partition wall facing the bottom wall. A first communication port communicates with the first space. A first supply pipeline is used to supply processing gas or a precursor gas of processing gas into the first space through the first communication port. The partition wall has a third communication port communicating with the second space and a jet port. A second supply pipeline is used to supply water vapor into the second space through the third communication port.

[0027] According to any of the foregoing embodiments of the first aspect of this application, the first supply pipeline includes a first sub-pipeline and a second sub-pipeline, and the first connection port includes a first sub-port and a second sub-port. The first sub-pipeline supplies a first type of gas to the first space through the first sub-port, and the second sub-pipeline supplies a second type of gas to the first space through the second sub-port.

[0028] According to any of the foregoing embodiments of the first aspect of this application, the first type of gas includes hydrogen fluoride gas, the second type of gas includes ammonia gas, or the first type of gas includes at least one of hydrogen-containing gas or hydrogen free radicals, and the second type of gas includes at least one of fluorine-containing gas or fluorine free radicals.

[0029] According to any of the foregoing embodiments of the first aspect of this application, the first type of gas includes ammonia and hydrogen radicals, and the second type of gas includes nitrogen trifluoride gas.

[0030] According to any of the foregoing embodiments of the first aspect of this application, the first sub-pipeline includes a first section and a second section, the first section is used to supply ammonia to the second section, the second section is used to convert part of the ammonia into nitrogen free radicals and hydrogen free radicals, and the second section is used to supply ammonia and hydrogen free radicals to the first space through a first connecting port.

[0031] According to any of the foregoing embodiments of the first aspect of this application, the second sub-port includes a first sub-segment extending along a first direction and a second sub-segment extending along a direction intersecting the first direction to communicate with the first sub-port.

[0032] According to any of the foregoing embodiments of the first aspect of this application, the top wall includes a wall body and a protruding structure disposed on the side of the wall body facing the first space, a first sub-port penetrates the wall body and the protruding structure, and a second sub-segment is formed in the protruding structure.

[0033] According to any of the foregoing embodiments of the first aspect of this application, the protruding structure further provides a fourth communication port extending to communicate with the first sub-port, and a portion of the second supply pipeline is located within the fourth communication port.

[0034] The plasma etching apparatus provided in this application embodiment is used in the fabrication of a display panel. In the plasma etching apparatus provided in this application embodiment, the plasma etching apparatus includes an etching chamber, a first supply line, and a second supply line. The etching chamber includes a chamber wall and an etching space enclosed by the chamber wall. The etching space can be used to accommodate a display panel in the fabrication state. The first supply line is connected to the etching space and is used to supply a processing gas or a precursor gas of a processing gas into the etching space. The processing gas or the precursor gas of the processing gas can be used to participate in the etching process of the display panel in the fabrication state within the etching space.

[0035] The second supply pipe is connected to the etching space and is used to supply water vapor into the etching space. The water vapor can be used to assist in the etching process of the display panel in the preparation state. By arranging at least a portion of the second supply pipe on the sidewall facing the etching space, and the extension direction of the second supply pipe arranged on the sidewall being parallel to at least a portion of the sidewall surface, the second supply pipe can have a large arrangement area within the etching space. This allows the second supply pipe to absorb heat more effectively within the etching space during the operation of the plasma etching equipment, thereby maintaining the water vapor in the second supply pipe in a gaseous state and thus reducing the energy consumption required to maintain the water vapor in a gaseous state in the plasma etching equipment. Attached Figure Description

[0036] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments of this application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a partial cross-sectional view of a display panel provided in an embodiment of this application;

[0038] Figure 2 This is a partial cross-sectional view of a plasma etching apparatus provided in an embodiment of this application;

[0039] Figure 3 This is a schematic diagram of the structure of a sidewall and a second supply pipeline provided in an embodiment of this application;

[0040] Figure 4 This is a schematic diagram of the structure of a first sidewall and a second supply pipeline provided in an embodiment of this application;

[0041] Figure 5 This is a schematic diagram of the structure of a second sidewall and a second supply pipeline provided in an embodiment of this application;

[0042] Figure 6 This is a partial cross-sectional view of a plasma etching apparatus provided in another embodiment of this application;

[0043] Figure 7 This is a schematic diagram of the structure of a second supply pipeline provided in an embodiment of this application;

[0044] Figure 8 This is a partial cross-sectional view of a plasma etching apparatus provided in another embodiment of this application;

[0045] Figure 9 This is a partial cross-sectional view of a plasma etching apparatus provided in another embodiment of this application;

[0046] Figure 10 This is a partial cross-sectional view of a plasma etching apparatus provided in another embodiment of this application.

[0047] Explanation of reference numerals in the attached figures:

[0048] 10. Plasma etching equipment; 10a. Exhaust port;

[0049] 100. Etching chamber; 110. Chamber wall; 110a. First connecting port; 110aa. First sub-port; 110ab. Second sub-port; 110aba. First segment; 110abb. Second segment; 110b. Second connecting port; 110c. Fourth connecting port; 110d. Transfer port; 111. Top wall; 111a. Top wall surface; 1111. Wall body; 1112. Protruding structure; 112. Bottom wall; 112a. Bottom wall surface; 113. Side wall; 113a. Side wall surface; 1131. First side wall; 1132. Second side wall; 120. Etching space; 121. First space; 122. Second space;

[0050] 200. First supply pipeline; 210. First sub-pipeline; 211. First section; 212. Second section; 220. Second sub-pipeline;

[0051] 300, Second supply line; 300a, Air outlet;

[0052] 400. Heating device;

[0053] 500. Detection components;

[0054] 600. Purge assembly;

[0055] 700. Transfer chamber;

[0056] 800, partition wall; 800a, third connecting port; 800b, jet nozzle;

[0057] 900, platform;

[0058] P, Display panel;

[0059] P1, substrate; P11, substrate; P12, first insulating layer; P13, second insulating layer; P14, third insulating layer; P15, driving circuit; P151, transistor; P151a, gate; P151b, source / drain; P152, storage capacitor; P152a, first electrode; P152b, second electrode;

[0060] P2, Pixel definition layer; P21, Pixel limiting section; P22, Pixel opening.

[0061] P3, light-emitting device; P31, first electrode; P32, light-emitting functional layer; P33, second electrode;

[0062] P4, encapsulation layer; P41, first encapsulation layer; P42, second encapsulation layer; P43, third encapsulation layer;

[0063] X, first direction;

[0064] Y, the second direction;

[0065] Z, Third-party orientation. Detailed Implementation

[0066] The features and exemplary embodiments of various aspects of this application will now be described in detail. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain this application and are not configured to limit this application. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples of this application.

[0067] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0068] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, that layer or region will be located "below" or "under" the other layer or region.

[0069] Liquid crystal display panels (LCDs), organic light-emitting diode (OLED) display panels, and display panels using light-emitting diode devices are widely used in various consumer electronics products such as mobile phones, televisions, personal digital assistants (PDAs), digital cameras, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body, and wide range of applications, becoming the mainstream in display devices.

[0070] However, in the current manufacturing process of display panel P, the plasma etching equipment 10 consumes a lot of energy when it is working. For example, when using the plasma etching equipment 10 to etch the film layer, a large amount of energy is often required to heat water in a liquid state into water vapor, so that there is enough water vapor in the plasma etching equipment 10 to assist the operation of the plasma etching equipment 10.

[0071] To address the aforementioned problems, this application provides a plasma etching apparatus 10. The following description, in conjunction with the accompanying drawings, will illustrate various embodiments of the plasma etching apparatus 10.

[0072] Figure 1 This is a partial cross-sectional view of a display panel P provided in an embodiment of this application. Figure 2 This is a partial cross-sectional view of a plasma etching apparatus 10 provided in an embodiment of this application. Figure 3 This is a schematic diagram of the structure of a sidewall 113 and a second supply pipe 300 provided in an embodiment of this application. In the figure, the X direction can be represented as the first direction X, the Y direction as the second direction Y, and the Z direction as the third direction Z. The first direction X, the second direction Y, and the third direction Z can intersect each other; for example, the first direction X, the second direction Y, and the third direction Z can be perpendicular to each other. For ease of illustration, the first supply pipe 200 and the second supply pipe 300 are not shown in section in the partial sectional view.

[0073] An embodiment of the first aspect of this application provides a plasma etching apparatus 10 for use in the fabrication of a display panel P. The plasma etching apparatus 10 includes an etching chamber 100, which includes a chamber wall 110 and an etching space 120 enclosed by the chamber wall 110. The chamber wall 110 includes a top wall 111, a bottom wall 112, and a side wall 113 that are interconnected. The top wall 111 and the bottom wall 112 are opposite each other in a first direction X. The side wall 113 is disposed between the top wall 111 and the bottom wall 112, and the side of the side wall 113 facing the etching space 120 has a side wall surface 1. 13a; a first supply line 200, connected to the etching space 120, the first supply line 200 being used to supply processing gas or a precursor gas of processing gas into the etching space 120; a second supply line 300, connected to the etching space 120, the second supply line 300 being used to supply water vapor into the etching space 120, wherein at least a portion of the second supply line 300 is arranged on the side of the sidewall 113 facing the etching space 120, and the extension direction of the second supply line 300 arranged on the sidewall 113 is parallel to at least a portion of the sidewall surface 113a.

[0074] The plasma etching equipment 10 provided in this application embodiment is used to participate in the fabrication of the display panel P.

[0075] Optionally, the plasma etching equipment 10 is used to participate in the fabrication of the display panel P. This can refer to the plasma etching equipment 10 being used to etch the material in the display panel P in the fabrication state, so as to etch the desired film structure on the display panel P in the fabrication state.

[0076] Optionally, the display panel P in the preparation state described in the embodiments of this application may refer to the structure of the display panel P that has not yet been completed during the preparation process.

[0077] Optionally, the plasma etching apparatus 10 can be used to participate in the fabrication of any type of display panel P. For example, the plasma etching apparatus 10 can be used to participate in the fabrication of at least one of a display panel P that emits light based on liquid crystal display technology, a display panel P that emits light based on organic light-emitting diode display technology, and a display panel P that emits light based on light-emitting diode display technology.

[0078] For ease of description, the following embodiments will be illustrated by taking the example of a plasma etching apparatus 10 being used to prepare a display panel P that emits light based on organic light-emitting diode display technology.

[0079] Optionally, the display panel P may include a substrate P1 and a light-emitting device P3 disposed on one side of the substrate P1. The substrate P1 can be used to drive the light-emitting device P3 to emit light, so as to realize the display operation of the display panel P.

[0080] Optionally, the substrate P1 can be configured in various ways. The substrate P1 may include, for example, a substrate P11 and a driving circuit P15 disposed on one side of the substrate P11. Exemplarily, the driving circuit P15 may include a transistor P151, a storage capacitor P152, and driving signal lines for connecting the various devices. The transistor P151 may include a semiconductor, a gate P151a, and source / drain terminals P151b. The storage capacitor P152 may include a first electrode P152a and a second electrode P152b.

[0081] As an example, substrate P1 may include a first insulating layer P12, a second insulating layer P13 and a third insulating layer P14 stacked together. Gate P151a and first electrode P152a may be located on the side of the first insulating layer P12 facing the substrate P11. Second electrode P152b may be located between the first insulating layer P12 and the second insulating layer P13. Source and drain electrodes P151b may be located between the second insulating layer P13 and the third insulating layer P14.

[0082] Optionally, in the direction away from the substrate P1, the light-emitting device P3 may include a first electrode P31, a light-emitting functional layer P32, and a second electrode P33 stacked sequentially.

[0083] Optionally, the light-emitting functional layer P32 may include a hole injection layer (HIL), a hole transport layer (HTL), a light-emitting structure, an electron injection layer (EIL), and an electron transport layer (ETL).

[0084] Optionally, the first electrode P31 and the second electrode P33 can serve as pixel electrodes of the display panel P. One of the first electrode P31 and the second electrode P33 can serve as an anode, and the other can serve as a cathode to drive the light-emitting functional layer P32 to emit light. In this embodiment, the first electrode P31 is used as the anode of the display panel P, and the second electrode P33 is used as the cathode of the display panel P for illustrative purposes.

[0085] Optionally, the display panel P may further include a pixel definition layer P2 disposed on one side of the substrate P1. The pixel definition layer P2 can be used to participate in dividing the sub-pixels of the display panel P. The pixel definition layer P2 may include a pixel defining portion P21 disposed between adjacent first electrodes P31 and a pixel opening P22 formed by the pixel defining portion P21. At least a portion of the surface of the first electrode P31 facing away from the substrate P1 may be exposed through the pixel opening P22 and contacted with the light-emitting functional layer P32 within the pixel opening P22, so as to realize that the first electrode P31 drives the light-emitting functional layer P32 to emit light.

[0086] Optionally, the pixel definition layer P2 can be in the form of a grid, and the hollow areas in the grid-shaped pixel definition layer P2 can form pixel openings P22.

[0087] Optionally, the display panel P may also include an encapsulation layer P4 disposed on the side of the light-emitting device P3 away from the substrate P1, and the encapsulation layer P4 may be used to encapsulate the light-emitting device P3.

[0088] Optionally, the encapsulation layer P4 may include a first encapsulation layer P41, the material of which may include an inorganic material, so that the first encapsulation layer P41 can effectively restrict the intrusion of moisture into the light-emitting device P3. For example, the material of the first encapsulation layer P41 may include at least one of silicon oxide, silicon oxynitride, and silicon nitride.

[0089] For example, the first encapsulation layer P41 can be prepared by chemical vapor deposition (CVD).

[0090] Optionally, the encapsulation layer P4 may further include a second encapsulation layer P42 disposed on the side of the first encapsulation layer P41 facing away from the substrate P1, to further improve the encapsulation effect on the light-emitting device P3. Optionally, the material of the second encapsulation layer P42 may include an organic material, allowing the second encapsulation layer P42 to have good flowability during the fabrication of the display panel P, and allowing the surface of the second encapsulation layer P42 facing away from the substrate P1 to have good flatness, facilitating the formation of subsequent film layers. For example, the second encapsulation layer P42 can be fabricated using inkjet printing (IJP) technology.

[0091] Optionally, the encapsulation layer P4 may further include a third encapsulation layer P43 disposed on the side of the second encapsulation layer P42 facing away from the substrate P1. The material of the third encapsulation layer P43 may include inorganic materials to further improve the encapsulation effect on the light-emitting device P3. For example, the material of the third encapsulation layer P43 may include at least one of silicon oxide, silicon oxynitride, and silicon nitride.

[0092] For example, the third encapsulation layer P43 can be prepared by a chemical vapor deposition process.

[0093] Optionally, the plasma etching apparatus 10 described in this application embodiment can be used to participate in etching to form any film layer structure among the substrate P1, light-emitting device P3, pixel definition layer P2 and encapsulation layer P4.

[0094] For ease of description, the following embodiments will be described using plasma etching equipment 10 for etching the silicon oxide material film layer in a display panel P in the preparation state as an example.

[0095] In a plasma etching apparatus 10 provided in this application embodiment, the plasma etching apparatus 10 includes an etching chamber 100, a first supply line 200, and a second supply line 300. The etching chamber 100 includes a chamber wall 110 and an etching space 120 formed by the chamber wall 110. The etching space 120 can be used to accommodate a display panel P in a preparation state. The first supply line 200 is connected to the etching space 120 and is used to supply processing gas or a precursor gas of processing gas into the etching space 120. The processing gas or the precursor gas of processing gas can be used to participate in the etching of the display panel P in the preparation state within the etching space 120.

[0096] Optionally, the process gas and the precursor gas of the process gas may not only be ordinary gases, but may also contain atoms in a free radical state.

[0097] Optionally, when the plasma etching apparatus 10 is used to etch a silicon oxide film, the processing gas may include any etching gas that can be used to etch a silicon oxide film, or the processing gas may include any gas that can be used to generate an etching gas in a reaction.

[0098] For example, when the plasma etching apparatus 10 is used to etch a silicon oxide film, the processing gas may include hydrogen fluoride gas (HF) and ammonia gas (NH3), or the processing gas may include the etching gas generated after the reaction of hydrogen fluoride gas (HF) and ammonia gas (NH3).

[0099] Optionally, hydrogen fluoride gas (HF) and ammonia gas (NH3) in the processing gas can react with each other to generate an etching gas used to etch the silicon oxide film. The reaction between hydrogen fluoride gas (HF) and ammonia gas (NH3) can occur as follows:

[0100] HF + NH3 → NH4F…(1).

[0101] The ammonium fluoride (NH4F) generated in the reaction of formula (1) can be used as an etching gas to react with the silicon oxide film layer in the display panel P under preparation, so as to achieve the etching treatment of the silicon oxide film layer. The following reaction can occur between ammonium fluoride (NH4F) and silicon oxide film layer:

[0102] SiO2+6NH4F→(NH4)2SiF6+2H2O+4NH3…(2).

[0103] By reacting ammonium fluoride (NH4F) with the silicon oxide film in formula (2), a reaction product (NH4)2SiF6, which is easily thermally decomposed at 100℃~200℃, can be generated, thereby achieving the etching of the silicon oxide film.

[0104] Optionally, the precursor gas for the treatment gas can be any gas used to generate the treatment gas.

[0105] For example, when the processing gas includes hydrogen fluoride gas (HF) and ammonia gas (NH3), or when the processing gas includes an etching gas generated after the reaction of hydrogen fluoride gas (HF) and ammonia gas (NH3), the precursor gas of the processing gas may include at least one of a hydrogen-containing gas or a hydrogen radical, and at least one of a fluorine-containing gas or a fluorine radical. "Hydrogen-containing gas" means a gas containing hydrogen (H2) or a hydride that is not in a free radical state; "hydrogen radical" means hydrogen gas in a free radical state (H*); "fluorine-containing gas" means a gas containing fluorine gas (F2) or a fluoride that is not in a free radical state; and "fluorine radical" means fluorine gas in a free radical state (F*).

[0106] As an example, the precursor gases for the treatment gas may include ammonia (NH3), hydrogen radicals (H*), and nitrogen trifluoride (NF3). The precursor gases for the treatment gas can react with each other as follows:

[0107] H*+NF3→HF+NF2…(3).

[0108] Therefore, in equation (3), the precursor gas of the processing gas can generate hydrogen fluoride gas (HF) in the processing gas, and the ammonia gas (NH3) in the precursor gas of the processing gas that does not participate in the reaction in equation (3) can be used as another processing gas to generate etching gas by performing the reaction of equation (1) in the etching space 120.

[0109] The second supply line 300 is connected to the etching space 120. The second supply line 300 is used to supply water vapor into the etching space 120. The water vapor can be used to assist the etching work of the display panel P in the preparation state.

[0110] For example, when the plasma etching equipment 10 is used to etch a silicon oxide film, as shown in equation (2), H2O is the product of the plasma etching equipment 10 after etching the silicon oxide film. During the etching process, when the generated H2O is unevenly distributed on the surface of the display panel P in the preparation state, it is easy to cause uneven etching of the silicon oxide film by the etching gas. Therefore, by using the second supply pipe 300 to supply water vapor into the etching space 120, the uniformity of H2O distribution on the surface of the display panel P in the preparation state can be improved, thereby improving the etching uniformity of the silicon oxide film by the plasma etching equipment 10.

[0111] By arranging at least a portion of the second supply pipe 300 on the side wall 113, and the extension direction of the second supply pipe 300 arranged on the side wall 113 being parallel to at least a portion of the side wall surface 113a, the second supply pipe 300 can have a large arrangement area within the etching space 120. This allows the second supply pipe 300 to absorb heat more fully within the etching space 120 during the operation of the plasma etching equipment 10, thereby allowing the water vapor in the second supply pipe 300 to be better maintained in a gaseous state. This, in turn, can effectively reduce the energy consumption required to maintain the water vapor in a gaseous state within the plasma etching equipment 10.

[0112] For example, the plasma etching apparatus 10 may further include a gas source assembly (not shown) for generating water vapor, which can supply water vapor into the etching space 120 via a second supply pipe 300. By arranging at least a portion of the second supply pipe 300 on the sidewall 113, and the extension direction of the second supply pipe 300 arranged on the sidewall 113 being parallel to at least a portion of the sidewall surface 113a, the second supply pipe 300 can absorb heat more effectively in the etching space 120 during the operation of the plasma etching apparatus 10, thereby maintaining the water vapor in the second supply pipe 300 in a gaseous state, and thus reducing the energy consumption of the gas source assembly.

[0113] Optionally, the second supply line 300 is arranged on the side of the sidewall 113 facing the etching space 120. This can mean that the second supply line 300 can be directly arranged on the sidewall surface 113a, or it can mean that a groove (not shown in the figure) can be formed on the side of the sidewall 113 facing the etching space 120, and the second supply line 300 can be at least partially embedded in the groove, so that the sidewall 113 can provide fixed support for at least part of the second supply line 300. Wherein, when a groove is formed on the sidewall 113, the sidewall surface 113a can refer to the surface of the sidewall 113 facing the etching space 120 and located outside the groove.

[0114] Similarly, in the embodiments described later, when the second supply line 300 is arranged on the chamber wall 110 at other locations, it can also mean that the second supply line 300 can be directly arranged on the inner wall surface of the chamber wall 110 at other locations, or it can mean that the chamber wall 110 at other locations can have a groove on the side facing the etching space 120, and the second supply line 300 can be at least partially embedded in the groove.

[0115] Optionally, the extension direction of the second supply pipe 300 arranged on the side wall 113 is parallel to the side wall surface 113a, which means that the second supply pipe 300 arranged on the side wall 113 can be extended along the shape of the side wall surface 113a.

[0116] Optionally, there may be multiple second supply lines 300, and the multiple second supply lines 300 may be spaced apart so that each second supply line 300 can supply water vapor into the etching space 120 relatively evenly.

[0117] Optionally, the sidewall 113 may include a first sidewall 1131 opposite in the second direction Y, and at least a portion of the second supply line 300 may be disposed on the first sidewall 1131. Optionally, the sidewall 113 may include a second sidewall 1132 opposite in the third direction Z, and at least a portion of the second supply line 300 may be disposed on the second sidewall 1132.

[0118] Figure 4 This is a schematic diagram of the structure of a first sidewall 1131 and a second supply pipeline 300 provided in an embodiment of this application. Figure 5 This is a schematic diagram of the structure of a second sidewall 1132 and a second supply pipeline 300 provided in an embodiment of this application.

[0119] like Figure 4 and Figure 5 As shown, in some embodiments of this application, the second supply line 300 arranged on the side wall 113 may be meandering.

[0120] In some alternative embodiments, at least a portion of the second supply line 300 disposed on the sidewall 113 extends along the first direction X, and / or, at least a portion of the second supply line 300 disposed on the sidewall 113 extends along a direction intersecting the first direction X.

[0121] Optionally, at least a portion of the second supply line 300 disposed on the first sidewall 1131 extends along a third direction Z, and / or at least a portion of the second supply line 300 disposed on the second sidewall 1132 extends along a second direction Y, wherein the first direction X, the second direction Y and the third direction Z intersect each other.

[0122] In these alternative embodiments, by meandering the second supply pipe 300 on the side wall 113, the arrangement area of ​​the second supply pipe 300 in the etching space 120 can be further increased, so that during the operation of the plasma etching equipment 10, the second supply pipe 300 can absorb the heat in the etching space 120 more fully, thereby allowing the water vapor in the second supply pipe 300 to be better maintained in a gaseous state.

[0123] In some alternative embodiments, the top wall 111 has a top wall surface 111a on the side facing the etching space 120, a portion of the second supply line 300 is arranged on the side of the top wall 111 facing the etching space 120, and the extension direction of the second supply line 300 arranged on the top wall 111 is parallel to at least a portion of the top wall surface 111a.

[0124] Optionally, the second supply line 300 disposed on the top wall 111 may also be meandering on the top wall 111. For example, the second supply line 300 disposed on the top wall 111 may extend along the second direction Y and / or the third direction Z.

[0125] In these alternative embodiments, the second supply pipe 300 arranged on the top wall 111 can also better absorb the heat in the etching space 120, thereby allowing the water vapor in the second supply pipe 300 to be better maintained in a gaseous state.

[0126] Figure 6 This is a partial cross-sectional view of a plasma etching apparatus 10 provided in another embodiment of this application.

[0127] like Figure 6 As shown, in some optional embodiments, the bottom wall 112 has a bottom wall surface 112a on the side facing the etching space 120, a portion of the second supply line 300 is arranged on the side of the bottom wall 112 facing the etching space 120, and the extension direction of the second supply line 300 arranged on the bottom wall 112 is parallel to at least a portion of the bottom wall surface 112a.

[0128] Optionally, the second supply line 300 disposed on the bottom wall 112 may also be meandering on the bottom wall 112. For example, the second supply line 300 disposed on the bottom wall 112 may extend along the second direction Y and / or the third direction Z.

[0129] In these alternative embodiments, the second supply pipe 300 arranged on the bottom wall 112 can also better absorb the heat in the etching space 120, so that the water vapor in the second supply pipe 300 can be better maintained in a gaseous state.

[0130] In some optional embodiments, the top wall 111 is provided with a first connection port 110a, and the first supply pipe 200 is used to supply processing gas or precursor gas of processing gas into the etching space 120 through the first connection port 110a. The bottom wall 112 is provided with a second connection port 110b, and part of the second supply pipe 300 enters into the etching space 120 through the second connection port 110b.

[0131] Optionally, the first connecting port 110a can be installed through the top wall 111, and the second connecting port 110b can be installed through the second supply pipeline 300.

[0132] In this optional embodiment, by opening the first connection port 110a on the top wall 111 and the second connection port 110b on the bottom wall 112, the distance between the first connection port 110a and the second connection port 110b can be relatively large. This can reduce the obstruction effect of the second supply pipe 300 on the gas supplied from the first supply pipe 200 to the etching space 120, and facilitate the arrangement of the second supply pipe 300, so that a larger size second supply pipe 300 can be arranged in the etching space 120.

[0133] In some embodiments of this application, during the operation of the plasma etching apparatus 10, the water vapor supplied by the second supply pipe 300 to the etching space 120, together with the processing gas or the precursor gas of the processing gas supplied by the first supply pipe 200 to the etching space 120, is sprayed from the side of the etching space 120 near the top wall 111 onto the display panel P in the etching space 120 which is in the etching state.

[0134] In some optional embodiments, the plasma etching apparatus 10 further includes a partition wall 800 disposed within the etching space 120 and connected to the chamber wall 110. The partition wall 800 divides the etching space 120 into a first space 121 located on the side of the partition wall 800 facing the top wall 111 and a second space 122 located on the side of the partition wall 800 facing the bottom wall 112. A first communication port 110a communicates with the first space 121. A first supply pipe 200 is used to supply processing gas or a precursor gas of processing gas into the first space 121 through the first communication port 110a. The partition wall 800 has a third communication port 800a communicating with the second space 122 and a jet port 800b. A second supply pipe 300 is used to supply water vapor into the second space 122 through the third communication port 800a.

[0135] Optionally, the first supply line 200 may be partially located within the first connection port 110a, but the first supply line 200 may not extend into the first space 121.

[0136] Optionally, the second supply line 300, which enters the second space 122 from the second connection port 110b, can extend along the inner wall surface of each chamber wall 110 to the third connection port 800a.

[0137] Optionally, the third connecting port 800a may be installed through the partition wall 800.

[0138] Optionally, the partition wall 800 can be connected to the chamber wall 110 at any location to divide the etching space 120 into a first space 121 and a second space 122. For example, the partition wall 800 can be connected to the top wall 111, the first space 121 can be formed by the partition wall 800 and a portion of the top wall 111, the second space 122 can be formed by the partition wall 800, the bottom wall 112, the side wall 113 and another portion of the top wall 111, the third communication port 800a can be opened on the partition wall 800 near the side wall 113, and the jet port 800b can be opened on the partition wall 800 near the bottom wall 112.

[0139] Optionally, the plasma etching apparatus 10 may also include a stage 900 located within the etching space 120 and disposed between the bottom wall 112 and the partition wall 800. The stage 900 can be used to support the display panel P in the preparation state. During the operation of the plasma etching apparatus 10, the gas in the first space 121 can be sprayed onto the display panel P in the preparation state on the stage 900 through the nozzle.

[0140] In these alternative embodiments, during the operation of the plasma etching apparatus 10, the gas in the first supply line 200 and the gas in the second supply line 300 can be sprayed together from the first space 121 through the jet nozzle 800b onto the display panel P in the preparation state in the second space 122, which facilitates the direct contact between the etching gas and water vapor and the film layer to be etched on the display panel P in the preparation state.

[0141] In some embodiments of this application, during the operation of the plasma etching apparatus 10, at least some of the different types of processing gases or precursor gases of processing gases ejected from the first supply line 200 may also be mixed in the first space 121 to form etching gases.

[0142] In some optional embodiments, the first supply line 200 includes a first sub-line 210 and a second sub-line 220, and the first connection port 110a includes a first sub-port 110aa and a second sub-port 110ab. The first sub-line 210 supplies a first type of gas to the first space 121 through the first sub-port 110aa, and the second sub-line 220 supplies a second type of gas to the first space 121 through the second sub-port 110ab.

[0143] In this optional embodiment, during the operation of the plasma etching apparatus 10, the first type of gas and the second type of gas can react within the first space 121 to generate etching gas. For example, the first type of gas and the second type of gas can react within the first space 121 as shown in formula (1) to generate etching gas. Or, for example, the first type of gas and the second type of gas can first react within the first space 121 as shown in formula (3) to generate a portion of the processing gas, and then the processing gases can react with each other as shown in formula (1) to generate etching gas.

[0144] As an example, the first type of gas includes hydrogen fluoride gas (HF) and the second type of gas includes ammonia gas (NH3). During the operation of the plasma etching equipment 10, the hydrogen fluoride gas (HF) ejected from the first sub-channel 210 can react with the ammonia gas (NH3) ejected from the second sub-channel 220 in the first space 121 to generate ammonium fluoride (NH4F) for etching the silicon oxide material film layer in the display panel P in the preparation state.

[0145] As another example, the first type of gas includes at least one of hydrogen-containing gas or hydrogen radicals, and the second type of gas includes at least one of fluorine-containing gas or fluorine radicals. For example, the first type of gas includes ammonia (NH3) and hydrogen radicals (H*), and the second type of gas includes nitrogen trifluoride gas (NF3). During the operation of the plasma etching apparatus 10, the ammonia (NH3) and hydrogen radicals (H*) ejected from the first sub-pipe 210 can react with the nitrogen trifluoride gas (NF3) ejected from the second sub-pipe 220 in the first space 121 to generate hydrogen fluoride gas (HF) in the processing gas. Then, the ammonia (NH3) in the precursor gas of the processing gas ejected from the first sub-pipe 210 that did not participate in the reaction in formula (3) can be used as another processing gas to react with hydrogen fluoride gas (HF) as in formula (1) to generate ammonium fluoride (NH4F) for etching the silicon oxide material film layer in the display panel P in the preparation state.

[0146] For ease of description, the following embodiments will be illustrated by the example of "the first type of gas includes ammonia (NH3) and hydrogen radicals (H*), and the second type of gas includes nitrogen trifluoride (NF3)".

[0147] In some optional embodiments, the first sub-pipeline 210 includes a first section 211 and a second section 212. The first section 211 is used to supply ammonia (NH3) to the second section 212. The second section 212 is used to convert a portion of the ammonia (NH3) into nitrogen free radicals (N*) and hydrogen free radicals (H*). The second section 212 is also used to supply ammonia (NH3) and hydrogen free radicals (H*) into the first space 121 through the first connection port 110a.

[0148] Optionally, the first segment 211 can also be used to supply nitrogen (N2) to the second segment 212, whereby nitrogen (N2) can be used as a carrier gas.

[0149] In these alternative embodiments, the second segment 212 may be configured as a remote plasma source, such that during the operation of the plasma etching apparatus 10, a portion of the ammonia (NH3) supplied from the first segment 211 may be converted by the second segment 212 into nitrogen radicals (N*) and hydrogen radicals (H*).

[0150] Optionally, the second segment 212 can be a microwave plasma source, a high-frequency plasma source, a capacitively coupled plasma source, an inductively coupled plasma source, etc. For example, the second segment 212 can be configured as a microwave plasma source; for instance, the second segment 212 may include a discharge tube and a microwave source. During the operation of the plasma etching apparatus 10, a hydrogen-containing gas (e.g., ammonia (NH3)) can be introduced from the first segment 211 into the discharge tube, and the microwave source can irradiate the discharge tube with excited microwaves.

[0151] In some alternative embodiments, the second sub-port 110ab includes a first sub-segment 110aba extending along a first direction X and a second sub-segment 110abb extending along a direction intersecting the first direction X to communicate with the first sub-port 110aa.

[0152] Optionally, the top wall 111 includes a wall body 1111 and a protruding structure 1112 disposed on the side of the wall body 1111 facing the first space 121. A first sub-port 110aa penetrates the wall body 1111 and the protruding structure 1112, and a second sub-segment 110abb is formed in the protruding structure 1112.

[0153] Optionally, a portion of the second sub-pipeline 220 may be located within the second sub-port 110ab.

[0154] Optionally, the protruding structure 1112 may also have a fourth connecting port 110c extending to communicate with the first sub-port 110aa, and part of the second supply line 300 is located in the fourth connecting port 110c.

[0155] Optionally, the fourth port 110c can be connected to the third port 800a.

[0156] Optionally, the fourth connection port 110c may extend at least partially along a direction intersecting the first direction X, and / or the fourth connection port 110c may extend at least partially along the first direction X.

[0157] Optionally, at least part of the fourth communication port 110c may be located on the side of the second sub-port 110ab facing the second space 122.

[0158] Optionally, in the direction away from the top wall 111, the wall surface of the protruding structure 1112 on the side near the first sub-port 110aa can be tilted in the direction away from the first sub-port 110aa.

[0159] Optionally, the first sub-pipeline 210 may not extend into the first sub-port 110aa formed by the protrusion structure 1112.

[0160] In these optional embodiments, by providing a second segment 110abb in the second sub-port 110ab that communicates with the first sub-port 110aa, during the operation of the plasma etching equipment 10, the first type of gas ejected from the first sub-pipe 210 and at least a portion of the second type of gas ejected from the second sub-pipe 220 can mix and react within the first sub-port 110aa, so that at least a portion of the etching gas can be generated within the first sub-port 110aa, thereby improving the working efficiency of the plasma etching equipment 10.

[0161] Figure 7 This is a schematic diagram of the structure of a second supply pipeline 300 provided in an embodiment of this application.

[0162] like Figure 7 As shown, in some optional embodiments, the second supply line 300 has an outlet 300a, and in the direction near the outlet 300a, the diameter of at least a portion of the second supply line 300 within the etching space 120 gradually increases, and / or, the diameter of the second supply line 300 located within the etching space 120 is greater than the diameter of the second supply line 300 located within the etching space 120.

[0163] For example, in the direction from the bottom wall 112 to the top wall 111, the diameter of the second supply pipe 300, which is arranged on the side wall 113 and extends along the first direction X, gradually increases.

[0164] Optionally, in the direction near the outlet 300a, the diameter of at least a portion of the second supply line 300 within the etching space 120 gradually increases. This can refer to the diameter of at least a portion of the second supply line 300 within the etching space 120 gradually increasing in the direction pointing towards the outlet 300a in the extension direction of the second supply line 300.

[0165] Optionally, this application does not limit the shape of the second supply pipeline 300. For example, the second supply pipeline 300 may be a round pipe or a square pipe. When the second supply pipeline 300 is a round pipe, the pipe diameter may refer to the inner diameter or outer diameter of the second supply pipeline 300; when the second supply pipeline 300 is a square pipe, the pipe diameter may refer to the width of the second supply pipeline 300.

[0166] In these optional embodiments, by reasonably setting the diameter of the second supply pipe 300, the heat exchange area of ​​the second supply pipe 300 located in the etching space 120 can be increased, which is beneficial to improving the heat exchange efficiency of the second supply pipe. That is, it is beneficial to allow the second supply pipe 300 to absorb the heat in the etching space 120 more fully, so that the water vapor in the second supply pipe 300 can be better maintained in a gaseous state.

[0167] In some alternative embodiments, the material of the second supply conduit 300 located within the etched space 120 includes a thermally conductive material.

[0168] For example, the material of the second supply line 300 located within the etched space 120 includes at least one of copper, stainless steel, aluminum and graphite.

[0169] In these alternative embodiments, by providing a thermally conductive material for the second supply pipe 300 located within the etching space 120, the second supply pipe 300 can easily absorb heat within the etching space 120, thereby allowing the water vapor in the second supply pipe 300 to be better maintained in a gaseous state.

[0170] Figure 8 This is a partial cross-sectional view of a plasma etching apparatus 10 provided in another embodiment of this application.

[0171] like Figure 8 As shown, in some optional embodiments, the plasma etching apparatus 10 further includes a heating device 400 disposed within the etching space 120, the heating device 400 being used to heat the second supply line 300 and / or the gas within the etching space 120.

[0172] Optionally, at least a portion of the heating device 400 is in contact with the outer wall of the second supply line 300. For example, the heating device 400 may be at least partially disposed within the second space 122, and the heating device 400 disposed within the second space 122 may be in contact with the outer wall of the second supply line 300.

[0173] In these optional embodiments, the heating device 400 can be used to heat the gas in the second supply pipe 300 and the etching space 120, so that during the operation of the plasma etching equipment 10, when the temperature in the etching space 120 is not good enough to keep the water vapor in the second supply pipe 300 and the etching space 120 in a gaseous state, the heating device 400 can directly act on the second supply pipe 300 to heat the gas in the second supply pipe 300, so that the water vapor in the second supply pipe 300 and the etching space 120 is not easily condensed due to the local low temperature area in the etching space 120, and the water vapor in the second supply pipe 300 can be better kept in a gaseous state.

[0174] Optionally, the plasma etching apparatus 10 also includes a temperature sensor disposed within the etching space 120. The temperature sensor is used to detect the temperature within the etching space 120, thereby facilitating the control of turning the heating device 400 on or off.

[0175] For example, when the temperature detected by the temperature sensor within the etching space 120 is lower than the preset temperature, it can be considered that the temperature within the etching space 120 is insufficient to maintain the water vapor in the second supply pipe 300 in a gaseous state. In this case, the heating device 400 can be turned on to heat the gas in the second supply pipe 300, thus ensuring that the water vapor in the second supply pipe 300 remains in a gaseous state. Conversely, when the temperature detected by the temperature sensor within the etching space 120 is higher than the preset temperature, it can be considered that the temperature within the etching space 120 is sufficient to maintain the water vapor in the second supply pipe 300 in a gaseous state. Therefore, the heating device 400 can be turned off to reduce energy consumption.

[0176] Figure 9 This is a partial cross-sectional view of a plasma etching apparatus 10 provided in another embodiment of this application.

[0177] like Figure 9 As shown, in some optional embodiments, the plasma etching apparatus 10 further includes a detection component 500 for detecting gas information within the etching space 120, thereby facilitating control over the amount of gas discharged into the etching space 120 by the first supply line 200 and the second supply line 300.

[0178] Optionally, the detection component 500 may be at least partially located within the etched space 120 to facilitate detection by the detection component 500. For example, the sensing device in the detection component 500 may be located within the etched space 120, while the control drive device in the detection component 500 may be located outside the etched space 120.

[0179] Optionally, the detection component 500 located within the etching space 120 can be fixed at any position on any etching chamber 100. For example, the detection component 500 located within the etching space 120 can be fixed to the chamber wall 110 or the stage 900.

[0180] Optionally, the detection component 500 includes a pressure sensor for detecting the gas pressure within the etching space 120, so that the amount of processing gas or precursor gas supplied by the first supply line 200 to the etching space 120 can be adjusted in real time based on the detection result of the pressure sensor, and the amount of water vapor supplied by the second supply line 300 to the etching space 120 can be adjusted in real time.

[0181] Optionally, the detection component 500 includes a humidity sensor for detecting the humidity of the gas in the etching space 120, so that the amount of processing gas or precursor gas supplied by the first supply line 200 to the etching space 120 can be adjusted in real time according to the detection result of the humidity sensor, and the amount of water vapor supplied by the second supply line 300 to the etching space 120 can be adjusted in real time.

[0182] Optionally, the detection component 500 includes a component detector for detecting the composition and content of gas within the etched space 120. For example, the component detector includes at least one of a mass spectrometer and a Fourier transform infrared gas analyzer.

[0183] As an example, the component detector can be used to detect the content of at least one of hydrogen fluoride gas (HF) and ammonia gas (NH3) in the etching space 120, so that the amount of processing gas or precursor gas supplied by the first supply line 200 to the etching space 120 can be adjusted in real time, so that the reaction as shown in formula (1) can occur more fully in the etching space 120, thereby generating the required amount of etching gas in the etching space 120.

[0184] Furthermore, when the first supply line 200 is used to supply the precursor gas of the processing gas into the etching space 120, for example, when the first supply line 200 is used to supply ammonia (NH3), hydrogen radicals (H*) and nitrogen trifluoride gas (NF3) into the etching space 120, the amount of precursor gas of the processing gas supplied by the first supply line 200 into the etching space 120 can be adjusted and controlled in real time by detecting the content of hydrogen fluoride gas (HF) in the etching space 120, so that the reaction as shown in formula (3) can occur more fully in the etching space 120, thereby generating the required amount of etching gas in the etching space 120.

[0185] Figure 10 This is a partial cross-sectional view of a plasma etching apparatus 10 provided in another embodiment of this application.

[0186] like Figure 10 As shown, in some optional embodiments, the chamber wall 110 is also provided with a transfer port 110d, and the plasma etching apparatus 10 also includes a purging assembly 600, which is used to purge gas or liquid leaking out of the etching space 120 through the transfer port 110d.

[0187] Optionally, during the operation of the plasma etching apparatus 10, the transfer port 110d is used to allow the display panel P in the preparation state to enter into the etching chamber 100, and / or, the transfer port 110d is used to allow the display panel P in the preparation state to exit from the etching chamber 100.

[0188] For example, the transmission port 110d may be formed in the side wall 113.

[0189] Optionally, the purging assembly 600 is used to spray dry inert gas to purge gas or liquid leaking out of the etching space 120 through the transfer port 110d. Exemplarily, the dry inert gas may include nitrogen (N2).

[0190] Optionally, the plasma etching apparatus 10 further includes a transfer chamber 700 connected to a transfer port 110d, and a purge assembly 600 disposed within the transfer chamber 700. The transfer chamber 700 connected to the transfer port 110d can be used to transfer a display panel P in the preparation state to the etching chamber 100 through the transfer port 110d, and / or, the transfer chamber 700 connected to the transfer port 110d can be used to receive a display panel P in the preparation state transferred from the etching chamber 100 through the transfer port 110d.

[0191] Optionally, the transfer chamber 700 is provided with an exhaust port 10a, and the purging assembly 600 is used to purge the gas or liquid leaking out of the etching space 120 through the transfer port 110d to the exhaust port 10a, so that the gas or liquid leaking out of the etching space 120 through the transfer port 110d can be discharged out through the exhaust port 10a.

[0192] Optionally, a vacuum pump can be used to extract gas from the transfer chamber 700 through the exhaust port 10a, so that the transfer chamber 700 can be in a vacuum state. Optionally, the etching chamber 100 can also be provided with an exhaust port 10a. For example, the bottom wall 112 of the etching chamber 100 can be provided with an exhaust port 10a, so that a vacuum pump can be used to extract gas from the etching chamber 100 through the exhaust port 10a, so that the etching chamber 100 can be in a vacuum state.

[0193] In these alternative embodiments, by providing a purging assembly 600 to purge gas or liquid leaking out of the etching space 120 through the transfer port 110d, the impact of gas or liquid leaking out of the etching space 120 through the transfer port 110d on subsequent fabrication processes can be reduced.

[0194] The embodiments described above are not exhaustive and do not limit the invention to specific examples. Clearly, many modifications and variations can be made based on the above description. These embodiments are selected and specifically described in this specification to better explain the principles and practical applications of this application, thereby enabling those skilled in the art to effectively utilize this application and its modifications. This application is limited only by the claims and their full scope and equivalents.

Claims

1. A plasma etching apparatus, characterized in that, The plasma etching equipment is used in the fabrication of the display panel, and the plasma etching equipment includes: An etching chamber includes a chamber wall and an etching space enclosed by the chamber wall. The chamber wall includes a top wall, a bottom wall, and a side wall that are connected to each other. The top wall and the bottom wall are opposite each other in a first direction. The side wall is disposed between the top wall and the bottom wall. The side wall has a side wall surface on the side facing the etching space. A first supply line is connected to the etching space and is used to supply processing gas or precursor gas of the processing gas into the etching space. A second supply line, connected to the etching space, is used to supply water vapor into the etching space. At least a portion of the second supply line is arranged on the side of the sidewall facing the etched space, and the extension direction of the second supply line arranged on the sidewall is parallel to at least a portion of the sidewall surface.

2. The plasma etching apparatus according to claim 1, characterized in that, At least a portion of the second supply line disposed on the sidewall extends along the first direction, and / or at least a portion of the second supply line disposed on the sidewall extends along a direction intersecting the first direction; Preferably, the sidewall includes a first sidewall opposite to the second sidewall in a second direction, at least a portion of the second supply line disposed on the first sidewall extends along a third direction, and / or, the sidewall includes a second sidewall opposite to the third direction, at least a portion of the second supply line disposed on the second sidewall extends along a second direction, wherein the first direction, the second direction and the third direction intersect each other; Preferably, the top wall has a top wall surface on the side facing the etching space, a portion of the second supply line is arranged on the side of the top wall facing the etching space, and the extension direction of the second supply line arranged on the top wall is parallel to at least a portion of the top wall surface. Preferably, the bottom wall has a bottom wall surface on the side facing the etching space, a portion of the second supply line is arranged on the side of the bottom wall facing the etching space, and the extension direction of the second supply line arranged on the bottom wall is parallel to at least a portion of the bottom wall surface.

3. The plasma etching apparatus according to claim 1, characterized in that, The second supply conduit has an outlet, and in the direction near the outlet, the diameter of at least a portion of the second supply conduit gradually increases within the etched space. And / or, the diameter of the second supply line located within the etched space is larger than the diameter of the second supply line located outside the etched space.

4. The plasma etching apparatus according to claim 1, characterized in that, The material of the second supply conduit located within the etched space includes a thermally conductive material; Preferably, the material of the second supply conduit located within the etched space includes at least one of copper, stainless steel, aluminum, and graphite.

5. The plasma etching apparatus according to claim 1, characterized in that, The plasma etching apparatus further includes a heating device disposed within the etching space, the heating device being used to heat the second supply pipeline and / or the gas within the etching space; Preferably, at least a portion of the heating device is in contact with the outer wall of the second supply pipeline; Preferably, the plasma etching apparatus further includes a temperature sensor disposed within the etching space, the temperature sensor being used to detect the temperature within the etching space.

6. The plasma etching apparatus according to claim 1, characterized in that, The plasma etching equipment also includes a detection component, which is used to detect gas information within the etching space; Preferably, the detection component includes a pressure sensor for detecting the air pressure within the etching space; Preferably, the detection component includes a humidity sensor for detecting the humidity of the gas within the etching space; Preferably, the detection component includes a component detector, which is used to detect the gas composition and content within the etching space; Preferably, the component detector includes at least one of a mass spectrometer and a Fourier transform infrared gas analyzer.

7. The plasma etching apparatus according to claim 1, characterized in that, The chamber wall is also provided with a transfer port, and the plasma etching equipment also includes a purging assembly, which is used to purge gas or liquid leaking out of the etching space through the transfer port. Preferably, the purging assembly is used to spray dry inert gas to purge gas or liquid leaking outward through the conveying port within the etched space; Preferably, the plasma etching apparatus further includes a transfer chamber connected to the transfer port, and the purging assembly is disposed within the transfer chamber; Preferably, the transfer chamber is provided with an exhaust port, and the purging assembly is used to purge the gas or liquid leaking out of the etching space through the transfer port to the exhaust port.

8. The plasma etching apparatus according to any one of claims 1 to 7, characterized in that, The top wall has a first connection port, and the first supply pipeline is used to supply processing gas or the precursor gas of the processing gas into the etching space through the first connection port. The bottom wall has a second connection port, and part of the second supply pipeline enters into the etching space through the second connection port.

9. The plasma etching apparatus according to claim 8, characterized in that, The plasma etching apparatus further includes a partition wall disposed within the etching space and connected to the chamber wall. The partition wall divides the etching space into a first space located on the side of the partition wall facing the top wall and a second space located on the side of the partition wall facing the bottom wall. The first communication port communicates with the first space. The first supply pipeline is used to supply processing gas or the precursor gas of the processing gas into the first space through the first communication port. The partition wall has a third communication port communicating with the second space and an air jet port. The second supply pipeline is used to supply water vapor into the second space through the third communication port.

10. The plasma etching apparatus according to claim 9, characterized in that, The first supply pipeline includes a first sub-pipeline and a second sub-pipeline, and the first connection port includes a first sub-port and a second sub-port. The first sub-pipeline supplies a first type of gas to the first space through the first sub-port, and the second sub-pipeline supplies a second type of gas to the first space through the second sub-port. Preferably, the first type of gas includes hydrogen fluoride gas, and the second type of gas includes ammonia gas; or, the first type of gas includes at least one of hydrogen-containing gas or hydrogen free radicals, and the second type of gas includes at least one of fluorine-containing gas or fluorine free radicals. Preferably, the first type of gas includes ammonia and hydrogen radicals, and the second type of gas includes nitrogen trifluoride gas; Preferably, the first sub-pipeline includes a first section and a second section, the first section is used to supply ammonia to the second section, the second section is used to convert part of the ammonia into nitrogen free radicals and hydrogen free radicals, and the second section is used to supply ammonia and hydrogen free radicals into the first space through the first connecting port. Preferably, the second sub-port includes a first sub-segment extending along the first direction and a second sub-segment extending along a direction intersecting the first direction to communicate with the first sub-port; Preferably, the top wall includes a wall body and a protruding structure disposed on the side of the wall body facing the first space, the first sub-port penetrates the wall body and the protruding structure, and the second sub-segment is formed in the protruding structure; Preferably, the protruding structure also has a fourth connecting port extending to communicate with the first sub-port, and a portion of the second supply pipeline is located within the fourth connecting port.

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