Plasma processing apparatus and plasma processing method

Abstract

This invention provides a plasma processing apparatus and a plasma processing method. The plasma processing apparatus of one embodiment includes: a chamber capable of maintaining an atmosphere depressurized below atmospheric pressure; a loading section disposed inside the chamber and for loading a workpiece; a plurality of body sections detachably disposed inside the chamber facing the loading section, cylindrical in shape and having different dimensions along their central axis; a first dispersion plate disposed at the end of the body section on the loading section side, facing the loading section and having a plurality of holes; a depressurization section capable of depressurizing the interior of the body sections; a gas supply section capable of supplying process gas to the interior of the body sections; and a plasma generation section capable of generating plasma inside the body sections. During plasma processing, depending on the processing conditions, one body section is selected from the plurality of body sections so that the distance between the loading section and the first dispersion plate is a desired value.

Description

Technical Field

[0001] The embodiments of the present invention relate to a plasma processing apparatus and a plasma processing method. Background Technology

[0002] A plasma processing apparatus for plasma processing such as dry etching includes, for example: a chamber; a mounting section disposed inside the chamber for mounting the workpiece; a depressurization section for depressurizing the atmosphere inside the chamber to a pressure lower than atmospheric pressure; a plasma generation section for generating plasma inside the chamber; and a gas supply section for supplying process gas to the plasma generation area inside the chamber.

[0003] The process gas supplied to the plasma generation area is excited and activated by the plasma, thereby generating plasma products such as free radicals or ions. The generated plasma products reach the surface of the workpiece placed on the mounting section, thereby performing plasma treatment on the surface of the workpiece.

[0004] Here, in order to improve the yield in plasma processing, it is preferable to make the in-plane distribution of plasma generators on the surface of the processed object uniform.

[0005] Therefore, a plasma processing apparatus has been proposed, in which a dispersion plate is provided between the plasma generation area and the mounting section, the dispersion plate having multiple holes for the plasma products to pass through. (See, for example, Patent Document 1)

[0006] If a dispersion plate is provided, the plasma generators reaching the surface of the workpiece can be dispersed. Therefore, it is possible to achieve a uniform in-plane distribution of the plasma generators on the surface of the workpiece, thereby improving the yield in plasma processing.

[0007] However, when using the same plasma processing device to perform various plasma processes under different conditions, it is sometimes difficult to improve the yield in plasma processing simply by setting up a dispersion plate.

[0008] Therefore, it was hoped that a technology could be developed to improve the yield in plasma processing, even when using the same plasma processing device to perform various plasma processes under different processing conditions.

[0009] [Existing Technical Documents]

[0010] [Patent Literature]

[0011] [Patent Document 1] Japanese Patent Application Publication No. 2002-33311 Summary of the Invention

[0012] [The problem the invention aims to solve]

[0013] The problem to be solved by the present invention is to provide a plasma processing apparatus and a plasma processing method that can improve the yield in plasma processing even when performing various plasma processing under different processing conditions using the same plasma processing apparatus.

[0014] [Technical means to solve the problem]

[0015] The plasma processing apparatus of this embodiment includes: a chamber capable of maintaining an atmosphere depressurized below atmospheric pressure; a mounting section disposed inside the chamber and capable of mounting a workpiece; a plurality of body sections detachably disposed inside the chamber facing the mounting section, cylindrical in shape and having different dimensions along a central axis; a first dispersion plate disposed at the end of the body section on the mounting section side, facing the mounting section and having a plurality of holes; a depressurization section capable of depressurizing the interior of the body sections; a gas supply section capable of supplying process gas into the interior of the body sections; and a plasma generation section capable of generating plasma inside the body sections. During plasma processing, based on the processing conditions of the plasma processing, one of the plurality of body sections is selected such that the distance between the mounting section and the first dispersion plate is a desired value.

[0016] The plasma processing apparatus of the embodiment includes: a chamber capable of maintaining an atmosphere depressurized below atmospheric pressure; a placement section disposed inside the chamber and capable of placing a process object; a second dispersion plate disposed inside the chamber facing the placement section, having a plurality of holes and capable of changing its position relative to the placement section; a positioning section capable of holding the second dispersion plate; a depressurization section capable of depressurizing the interior of the chamber; a gas supply section capable of supplying process gas to the interior of the chamber and to a region of the second dispersion plate opposite to the placement section; and a plasma generation section capable of generating plasma in the region of the chamber where the process gas is supplied. The placement section has a plurality of pins that change the position of the second dispersion plate relative to the placement section. During plasma processing, the position of the second dispersion plate relative to the placement section is changed by the plurality of pins according to the processing conditions of the plasma processing, so that the distance between the placement section and the second dispersion plate becomes a desired value. The positioning section holds the second dispersion plate whose position has changed.

[0017] The plasma processing apparatus of the embodiment includes: a chamber capable of maintaining an atmosphere depressurized below atmospheric pressure; a mounting section disposed inside the chamber and capable of mounting a process object; a plurality of body sections disposed detachably facing the mounting section inside the chamber, being cylindrical and having different dimensions along a central axis; a first dispersion plate disposed at the end of the body section on the mounting section side, facing the mounting section and having a plurality of holes; a mounting section disposed at the end of the body section on the side opposite to the mounting section side and having a common shape among the plurality of body sections; a fixing section capable of mounting one of the plurality of body sections selected from the plurality of body sections according to the processing conditions of plasma processing in the chamber via the mounting section; a depressurization section capable of depressurizing the interior of the body sections; a gas supply section capable of supplying process gas to the interior of the body sections; and a plasma generation section capable of generating plasma inside the body sections.

[0018] The plasma treatment method of the embodiment uses the plasma treatment apparatus to perform plasma treatment on the workpiece. The plasma treatment method includes: a step of selecting one of a plurality of body parts according to the processing conditions of the plasma treatment, such that the distance between the mounting part and the first dispersion plate is a desired value; a step of placing the selected body part inside a chamber; a step of supplying process gas to the interior of the body part placed inside the chamber; and a step of generating plasma inside the body part.

[0019] The plasma treatment method of the embodiment uses the plasma treatment apparatus to perform plasma treatment on the workpiece. The plasma treatment method includes: a step of changing the position of a second dispersion plate relative to a mounting portion by means of a plurality of top pins according to the processing conditions of the plasma treatment, so that the distance between the mounting portion and the second dispersion plate becomes a desired value; a step of holding the second dispersion plate, whose position has changed, by means of a positioning portion; a step of supplying a process gas to the interior of the chamber and to a region on the side of the second dispersion plate opposite to the mounting portion side; and a step of generating plasma in the region where the process gas has been supplied.

[0020] [The effects of the invention]

[0021] According to embodiments of the present invention, a plasma processing apparatus and a plasma processing method are provided that can improve the yield in plasma processing even when performing various plasma processes under different processing conditions using the same plasma processing apparatus. Attached Figure Description

[0022] Figure 1 This is a schematic cross-sectional view illustrating the plasma processing apparatus of the first configuration.

[0023] Figure 2 yes Figure 1 A cross-sectional view of the plasma processing device along line AA.

[0024] Figure 3 This is a schematic cross-sectional view of the dispersed portion.

[0025] Figure 4 (a) ~ Figure 4 (c) is a schematic cross-sectional view used to illustrate retainers with different dimensions.

[0026] Figure 5 This is a schematic cross-sectional view illustrating another embodiment of the retainer.

[0027] Figure 6 This is a schematic cross-sectional view illustrating another embodiment of the plasma processing apparatus.

[0028] Figure 7 of (a) Figure 7 (b) is a schematic cross-sectional view illustrating the setting of the distance between the dispersion plate and the mounting part.

[0029] Explanation of icon numbers

[0030] 1, 1a: Plasma processing device

[0031] 2: Chamber

[0032] 2a, 2b, 2c, 2d, 81a1, 81b1, 82a2, 84a1: Holes

[0033] 3, 4, 73: Power supply unit

[0034] 5: Pressure Reduction Section

[0035] 6: Gas Supply Department

[0036] 7: Loading section

[0037] 8, 18: Dispersion section

[0038] 9: Controller

[0039] 21: Load-locking chamber

[0040] 22: Gate valve

[0041] 23: Window

[0042] 31: Antenna

[0043] 32: Matcher

[0044] 33, 43: Power supply

[0045] 34: Cover

[0046] 41: Base

[0047] 41a: Insulating components

[0048] 42: Matcher

[0049] 51, 64, 74d: On / off valves

[0050] 52: Pump

[0051] 53: Pressure Controller

[0052] 61: Nozzle

[0053] 62, 74a: Gas source

[0054] 63, 74b: Gas controller

[0055] 71: Electrostatic Chuck

[0056] 72: Mask ring

[0057] 73a: DC power supply

[0058] 73b: Switch

[0059] 74: Control Department

[0060] 74c: Temperature Control Section

[0061] 75: Top pin

[0062] 81, 84, 181a, 181b, 181c, 281: Holders

[0063] 81a, 82a: Body part

[0064] 81b: Maintenance section

[0065] 81c, 82b: Flanges

[0066] 82: Dispersion plate

[0067] 82a1: concave part

[0068] 82a3: Plug

[0069] 83: Bracket

[0070] 84a: Fixing hole

[0071] 85: Positioning Department

[0072] 85a: Selling

[0073] 85b: Drive unit

[0074] 100: Items to be processed

[0075] G: Process Gas

[0076] H, H1, H2, H3: Dimensions

[0077] L1, L2: Specified values Detailed Implementation

[0078] Hereinafter, embodiments will be illustrated with reference to the accompanying drawings. Furthermore, in each drawing, the same reference numerals are used to denote the same constituent elements, and detailed descriptions are appropriately omitted.

[0079] Furthermore, as an example, the following describes a dual-frequency plasma processing apparatus having an inductively coupled electrode at the top and a capacitively coupled electrode at the bottom.

[0080] However, the method of plasma generation is not limited to this. For example, the plasma processing device can be a plasma processing device that uses inductively coupled plasma (ICP) or a plasma processing device that uses capacitively coupled plasma (CCP), etc.

[0081] Furthermore, it is not limited to plasma processing devices that use high-frequency plasma generation; for example, it can also be a plasma processing device that uses microwaves to generate plasma.

[0082] That is, the plasma processing apparatus of this embodiment can be any apparatus capable of generating plasma in the region of the internal space of the chamber facing the loading portion of the object to be processed.

[0083] Furthermore, the general structure of plasma processing devices using inductively coupled plasma, capacitively coupled plasma, and microwave plasma can be applied using known techniques, therefore detailed descriptions of these plasma processing devices are omitted.

[0084] (First Implementation)

[0085] Figure 1 This is a schematic cross-sectional view illustrating the plasma processing apparatus 1 in its first configuration.

[0086] Figure 2 yes Figure 1 A cross-sectional view of plasma processing device 1 along line AA.

[0087] In addition, Figure 2 To avoid complexity, the description of the dispersion plate 82, which will be discussed later, is omitted.

[0088] like Figure 1 as well as Figure 2As shown, the plasma processing apparatus 1 includes, for example, a chamber 2, a power supply unit 3, a power supply unit 4, a pressure reducing unit 5, a gas supply unit 6, a mounting unit 7, a dispersion unit 8, and a controller 9.

[0089] The controller 9 includes, for example, an arithmetic unit such as a central processing unit (CPU) and a storage unit such as a memory. The controller 9 is, for example, a computer. Based on a control program stored in the storage unit, the controller 9 controls the operation of each component installed in the plasma processing apparatus 1. Furthermore, known techniques can be applied to the control program for controlling the operation of each component; therefore, detailed descriptions are omitted.

[0090] Chamber 2 has an airtight structure capable of maintaining an atmosphere depressurized below atmospheric pressure. Chamber 2 is, for example, generally cylindrical in shape. Chamber 2 may be formed of a metal such as aluminum alloy. Chamber 2 may be grounded.

[0091] A port 2a for loading and unloading the processed item 100 can be provided on the side of the chamber 2. A load locking chamber 21 can be connected to the portion of the chamber 2 with the port 2a. A gate valve 22 can be provided in the load locking chamber 21. During plasma processing, the port 2a is closed in an airtight manner by the gate valve 22. During loading and unloading of the processed item 100, the port 2a is connected to the load locking chamber 21 by the gate valve 22.

[0092] The processed object 100 may be, for example, a photomask, a blank mask, a wafer, a glass substrate, etc. However, the processed object 100 is not limited to the illustrated object, as long as it is an object that has a portion that is processed by free radicals or ions generated by activating the process gas G described later using plasma.

[0093] A window 23 is provided on the top surface of chamber 2 in an airtight manner. The window 23 faces the mounting part 7 (electrostatic chuck 71) of the workpiece 100. The window 23 is plate-shaped. The window 23 can be formed of a material that can transmit electromagnetic fields and is not easily damaged during plasma processing. For example, the window 23 is formed of a dielectric material such as quartz.

[0094] The power supply unit 3 is a plasma generating unit that generates plasma inside the chamber 2. In this case, the power supply unit 3 generates plasma in the space divided by the dispersion unit 8 inside the chamber 2.

[0095] exist Figure 1 In the illustrated plasma processing apparatus 1, the power supply unit 3 is located outside the chamber 2 and on the side of the window 23 opposite to the dispersion section 8.

[0096] The power supply unit 3 may include, for example, an antenna 31, a matching unit 32, and a power supply 33.

[0097] Antenna 31 can be disposed outside chamber 2 and located in the window 23 facing the dispersion section 8. Viewed from the direction of antenna 31 toward dispersion section 8, antenna 31 is located inside the holder 81 of dispersion section 8. Antenna 31 is electrically connected to power supply 33 via matching device 32. Antenna 31 has, for example, multiple coils for generating electromagnetic fields and multiple capacitors. In addition, a cover 34 may be provided to cover antenna 31. Cover 34 may be grounded. In addition, a Faraday shield may be provided between antenna 31 and window 23.

[0098] Matching unit 32 includes matching circuitry for matching the impedance between the power supply 33 side and the plasma side.

[0099] The power supply 33 can be configured as a high-frequency power supply. For example, the power supply 33 applies high-frequency power to the antenna 31 at a frequency of approximately 100 kHz to 100 MHz. In this case, the power supply 33 is preferably capable of applying high-frequency power to the antenna 31 at a frequency suitable for generating plasma (e.g., 13.56 MHz). Alternatively, the power supply 33 can also be configured to change the frequency of the output high-frequency power.

[0100] Power supply unit 4 is provided for so-called bias control. That is, power supply unit 4 is provided to control the energy used to introduce ions contained in the generated plasma into the processed material 100. In this case, if the energy for introducing ions into the processed material 100 is increased, physical processing effects (sputtering effects) caused by ions are easily generated in the processing area of ​​the processed material 100. On the other hand, if the energy for introducing ions into the processed material 100 is decreased, chemical processing effects caused by free radicals are easily generated in the processing area of ​​the processed material 100.

[0101] The power supply unit 4 may include, for example, a base 41, a matching unit 42, and a power supply 43.

[0102] The base 41 is disposed at the bottom of the chamber 2 via an insulating member 41a. Additionally, the insulating member 41a may cover the sides of the base 41. The insulating member 41a is formed, for example, of a dielectric material such as quartz.

[0103] The base 41 is electrically connected to the power supply 43 via a matching adapter 42. Additionally, an electrostatic chuck 71 can be mounted on the base 41. The base 41 serves as an electrode for applying high-frequency power via the power supply 43, and also as a support platform for supporting the electrostatic chuck 71. In this case, the base 41 has a flow path for cooling water to circulate, which can also cool the electrostatic chuck 71. The base 41 can be formed of a metal such as aluminum alloy.

[0104] Matching unit 42 is electrically connected between base 41 and power supply 43. Matching unit 42 may include matching circuitry for matching the impedance between the power supply 43 side and the plasma side.

[0105] The power supply 43 can be configured as a high-frequency power supply. The power supply 43 applies high-frequency power to the base 41 at a frequency suitable for introducing ions (e.g., below 13.56 MHz).

[0106] The pressure relief unit 5 reduces the internal pressure of chamber 2 to the specified pressure.

[0107] The pressure reducing unit 5 includes, for example, an on / off valve 51, a pump 52, and a pressure controller 53.

[0108] The on / off valve 51 can be connected, for example, to a hole 2b provided on the side of the chamber 2. The on / off valve 51 opens and closes the flow path between the chamber 2 and the pump 52. The on / off valve 51 can be, for example, a lift valve.

[0109] Pump 52 can be configured as, for example, a turbomolecular pump (TMP).

[0110] A pressure controller 53 may be installed between the on / off valve 51 and the pump 52. The pressure controller 53 controls the internal pressure of the chamber 2 to a predetermined pressure based on the output of a vacuum gauge (not shown) or similar device that detects the internal pressure of the chamber 2. The pressure controller 53 may be, for example, an automatic pressure controller (APC).

[0111] The gas supply unit 6 supplies process gas G to the space inside the chamber 2 divided by the dispersion unit 8 (for example, inside the body part 81a of the dispersion unit 8, described later).

[0112] The gas supply unit 6 includes, for example, a nozzle 61, a gas source 62, a gas controller 63, and an on / off valve 64.

[0113] The nozzle 61 is positioned between the hole 2c provided on the inner wall of the chamber 2 and the hole 81a1 provided on the holder 81 of the dispersion section 8 (described later). The nozzle 61 supplies the process gas G supplied from the gas source 62 to the space divided by the dispersion section 8 via the gas controller 63 and the on / off valve 64.

[0114] At least one nozzle 61 may be provided. Figure 1 as well as Figure 2 The illustrated plasma processing apparatus 1 is provided with four nozzles 61. In the case of providing multiple nozzles 61, such as... Figure 2As illustrated, multiple nozzles 61 can be arranged at approximately equal intervals around the central axis of the holder 81 of the dispersion section 8. In this way, fluctuations in the concentration of the process gas G in the plasma generation region can be suppressed.

[0115] The gas source 62 is connected to the nozzle 61 via a gas controller 63 and an on / off valve 64. The gas source 62 can be, for example, a high-pressure steel cylinder containing process gas G. Alternatively, the gas source 62 can also be, for example, a plant piping system.

[0116] The process gas G can be any gas that generates the desired free radicals or ions when excited and activated by plasma. For example, if the plasma treatment is an etching process, the process gas G can be a gas that generates free radicals or ions that can etch the exposed surfaces of the workpiece 100. In this case, the process gas G can be, for example, a chlorine-containing gas or a fluorine-containing gas. For example, the process gas G can be a mixture of chlorine and oxygen, CHF3, a mixture of CHF3 and CF4, a mixture of SF6 and helium, etc.

[0117] A gas controller 63 may be disposed between the gas source 62 and the nozzle 61. The gas controller 63 controls at least one of the flow rate and pressure of the process gas G supplied from the gas source 62. The gas controller 63 may be, for example, a mass flow controller (MFC).

[0118] The on / off valve 64 can be located between the gas controller 63 and the nozzle 61. The on / off valve 64 controls the start and stop of the supply of process gas G. The on / off valve 64 can be, for example, a two-way solenoid valve. Alternatively, the gas controller 63 can also have the function of the on / off valve 64.

[0119] The placement section 7 is located inside the chamber 2, facing the dispersion section 8. The processing material 100 is placed on the end of the placement section 7 on the side of the dispersion section 8.

[0120] The mounting section 7 includes, for example, an electrostatic chuck 71, a mask ring 72, a power supply unit 73, a temperature control unit 74, and a top pin 75.

[0121] The electrostatic chuck 71 uses electrostatic force to attract the workpiece 100. The electrostatic chuck 71 can be a chuck utilizing Coulomb force or a chuck utilizing Johnsen-Rahbek force. Furthermore, the electrostatic chuck 71 can also control the temperature of the workpiece 100 during processing. That is, the electrostatic chuck 71 has at least the function of attracting the workpiece 100, and may also have the function of controlling the temperature of the workpiece 100.

[0122] An electrostatic chuck 71 may be disposed on a base 41. The electrostatic chuck 71 may have, for example, a plate-shaped dielectric and electrodes disposed inside the dielectric. The dielectric may be formed of ceramic such as alumina.

[0123] Multiple grooves can be provided on the dielectric surface of the electrostatic chuck 71 on which the workpiece 100 is placed. Temperature control gas is supplied from the temperature control unit 74 to the multiple grooves. The supplied temperature control gas circulates within the space defined by the grooves and the workpiece 100. At this time, heat exchange occurs between the temperature control gas and the workpiece 100.

[0124] The electrodes of the electrostatic chuck 71 are plate-shaped, and are formed of metals such as tungsten or molybdenum. The electrodes can be unipolar or bipolar. For example, in the case of bipolar electrodes, two electrodes can be arranged side by side on the same plane.

[0125] The mask ring 72 is frame-shaped and may be disposed, for example, near the edge of the face of the distribution portion 8 of the base 41, or near the edge of the face of the distribution portion 8 of the electrostatic chuck 71. The mask ring 72 may be formed of a dielectric material such as quartz.

[0126] The power supply unit 73 may include, for example, a DC power supply 73a and a switching switch 73b.

[0127] The DC power supply 73a is electrically connected to the electrodes of the electrostatic chuck 71. When a voltage is applied to the electrodes through the DC power supply 73a, a charge is generated on the surface of the electrodes on the side of the workpiece 100. As a result, an electrostatic force is generated between the electrodes and the workpiece 100, and the workpiece 100 is attracted to the electrostatic chuck 71 by the generated electrostatic force.

[0128] The switching switch 73b is electrically connected between the DC power supply 73a and the electrodes of the electrostatic chuck 71. The switching switch 73b switches between the adsorption and desorption of the processed material 100.

[0129] The temperature control unit 74 supplies temperature control gas to the electrostatic chuck 71.

[0130] The temperature control unit 74 includes, for example, a gas source 74a, a gas controller 74b, a temperature regulation unit 74c, and an on / off valve 74d.

[0131] The gas source 74a can be, for example, a high-pressure steel cylinder containing a temperature-controlled gas. Alternatively, the gas source 74a can also be, for example, a factory piping system. The temperature-controlled gas can be, for example, helium.

[0132] A gas controller 74b can be positioned between the gas source 74a and the electrostatic chuck 71. The gas controller 74b, for example, controls the flow rate of the temperature-controlled gas supplied from the gas source 74a. The gas controller 74b can be, for example, an MFC (Mechanical Control Unit).

[0133] The temperature control unit 74c may be disposed between the gas controller 74b and the electrostatic chuck 71. The temperature control unit 74c adjusts the temperature of the processed item 100 by adjusting the temperature of the temperature control gas. The temperature control unit 74c may include, for example, at least one of a heating device such as a heater and a cooling device such as a heat exchanger.

[0134] The on / off valve 74d can be located between the temperature control unit 74c and the electrostatic chuck 71. The on / off valve 74d controls the start and stop of the supply of temperature-controlled gas. The on / off valve 74d can be, for example, a two-way solenoid valve. Alternatively, the gas controller 74b can also have the function of the on / off valve 74d.

[0135] Multiple top pins 75 may be provided. When delivering the processed workpiece 100 to a conveying device (not shown) or receiving the workpiece 100 before processing from the conveying device (not shown), the multiple top pins 75 are raised, causing them to protrude from the upper surface of the electrostatic chuck 71. When processing the workpiece 100, the multiple top pins 75 are lowered, so that the front ends of the multiple top pins 75 are located closer to the base 41 than the surface of the electrostatic chuck 71 on which the workpiece 100 is placed. The multiple top pins 75 can be driven, for example, by a control motor such as a servo motor or a cylinder.

[0136] Here, when the process gas G is excited and activated by plasma, plasma products such as free radicals or ions are generated.

[0137] In this case, as described above, the generated ions are introduced onto the surface of the workpiece 100 placed on the mounting section 7 using energy generated by the power applied by the power supply unit 4. Therefore, the movement of ions is less affected by airflow or the like inside the chamber 2. As a result, the fluctuation in the amount of ions introduced onto the surface of the workpiece 100 is reduced.

[0138] In contrast, the generated free radicals reach the surface of the workpiece 100 placed on the mounting section 7 due to gravity. Therefore, the movement of free radicals is easily affected by the airflow inside the chamber 2. As a result, the amount of free radicals reaching the surface of the workpiece 100 sometimes fluctuates greatly. If the amount of free radicals reaching the surface of the workpiece 100 fluctuates greatly, the amount of workpiece processed (e.g., the amount of etching) will fluctuate greatly, thus raising concerns about a decrease in yield.

[0139] In this case, if a dispersion plate with multiple holes for the plasma generator to pass through is provided between the plasma generation area inside chamber 2 and the mounting section 7, the generated ions, as well as the generated free radicals, can pass through and be dispersed. Therefore, the fluctuation in the amount of free radicals reaching the surface of the processed material 100 can be reduced, thereby improving the yield.

[0140] However, in plasma processing, processing conditions such as the type or supply rate of process gas G, the internal pressure of chamber 2, the material of the surface of the processed object 100, and the size or shape of the pattern formed on the surface of the processed object 100 can sometimes change. If the processing conditions change, the dispersion behavior of free radicals in the space between the dispersion plate and the mounting section 7 can sometimes change. Therefore, when performing multiple plasma processes with different processing conditions using the same plasma processing apparatus, simply setting up a dispersion plate is sometimes insufficient to address the changes in the dispersion behavior of free radicals. If the changes in the dispersion behavior of free radicals cannot be addressed, the fluctuation in the amount of free radicals reaching the surface of the processed object 100 will increase, making it difficult to improve the yield.

[0141] Therefore, as Figure 1 As shown, a dispersion section 8 is provided in the plasma processing apparatus 1 of this embodiment.

[0142] Figure 3 This is a schematic cross-sectional view of the distributed part 8.

[0143] like Figure 3 As shown, the dispersion section 8 has, for example, a retainer 81 and a dispersion plate 82 (an example of the first dispersion plate).

[0144] The retainer 81 and the dispersion plate 82 may be formed of a material that is not easily damaged by plasma, process gas G, and plasma products. For example, the retainer 81 and the dispersion plate 82 may be formed of quartz.

[0145] like Figure 1 As shown, the retainer 81 is disposed inside the chamber 2, between the window 23 and the mounting part 7.

[0146] like Figure 3 As shown, the retainer 81 has, for example, a body portion 81a, a retaining portion 81b, and a flange 81c.

[0147] The body part 81a, the retaining part 81b, and the flange 81c can be integrally formed.

[0148] The main body 81a is, for example, cylindrical. The outline of the main body 81a, when viewed from the window 23 towards the mounting portion 7, can be, for example, set to be approximately the same shape as the outline of the inner wall of the chamber 2. The main body 81a can be, for example, cylindrical. The main body 81a extends between the window 23 and the mounting portion 7 in the direction along the central axis of the mounting portion 7 (electrostatic chuck 71). The central axis of the main body 81a can be, for example, set to be approximately coaxial with the central axis of the mounting portion 7 (electrostatic chuck 71). The main body 81a has openings at both ends.

[0149] A hole 81a1 is provided in the body part 81a, which passes through the outer wall and the inner wall. The hole 81a1 is located opposite to the nozzle 61. The hole 81a1 serves as a supply port for supplying process gas G into the interior of the holder 81 (body part 81a).

[0150] A retaining portion 81b is provided at the end of the main body portion 81a on the side of the mounting portion 7. The retaining portion 81b is plate-shaped and protrudes inward. A hole 81b1 is provided in the central portion of the retaining portion 81b, which passes through the retaining portion 81b in the direction along the central axis of the main body portion 81a. The central axis of the hole 81b1 can be set to be approximately coaxial with the central axis of the main body portion 81a. The outline of the hole 81b1 when viewed from the window 23 toward the mounting portion 7 can be, for example, a circle.

[0151] Flange 81c is located at the end of the body portion 81a on the side of window 23. Flange 81c is plate-shaped and protrudes outward from the retaining portion 81b. Flange 81c may be, for example, frame-shaped.

[0152] In addition, the retainer 81 is detachably disposed inside the chamber 2.

[0153] For example, such as Figure 1 As shown, the retainer 81 can be detachably mounted inside the chamber 2 using a bracket 83. The bracket 83 can be detachably mounted on the inner wall of the chamber 2 using fasteners such as screws. When the retainer 81 is mounted inside the chamber 2 using the bracket 83, the flange 81c of the retainer 81 can be connected to the window 23. The bracket 83 functions as a fixing part to fix the retainer 81 (body part 81a) relative to the chamber 2.

[0154] The dispersion plate 82 is detachably installed inside the main body 81a.

[0155] The dispersion plate 82 has a body portion 82a and a flange 82b. The body portion 82a and the flange 82b can be integrally formed.

[0156] The main body 82a is plate-shaped. The outline of the main body 82a, when viewed from the window 23 towards the mounting portion 7, can, for example, be the same shape as the outline of the hole 81b1 in the retaining portion 81b. The outline of the main body 82a can, for example, be circular. The cross-sectional dimension of the main body 82a in the direction intersecting the direction from the window 23 towards the mounting portion 7 can be set slightly smaller than the cross-sectional dimension of the hole 81b1 in the retaining portion 81b. Therefore, the main body 82a can be detachably provided in the hole 81b1 of the retaining portion 81b.

[0157] At the end of the main body 82a opposite to the side of the mounting portion 7, there is an opening with a recess 82a1. The shape of the recess 82a1 is similar to that of the object being processed 100.

[0158] A plurality of holes 82a2 are provided at the bottom of the recess 82a1, extending through the body portion 82a in the thickness direction. The cross-sectional shape of the holes 82a2 in the direction intersecting the thickness direction of the body portion 82a can be, for example, a circle.

[0159] Multiple holes 82a2 can be arranged in a matrix, for example. For example, more than 20 and less than 35 holes 82a2 can be arranged in a matrix.

[0160] The center of the area of ​​the body part 82a having multiple holes 82a2 may, for example, coincide with the center of the body part 82a.

[0161] If a plurality of holes 82a2 are provided at the bottom of the recess 82a1 of the body portion 82a, free radicals retained inside the recess 82a1 can be supplied to the plurality of holes 82a2. Therefore, fluctuations in the amount of free radicals passing through the plurality of holes 82a2 can be suppressed.

[0162] In this case, the dimension of the recess 82a1 in the thickness direction of the body portion 82a (the depth dimension of the recess 82a1) is preferably set to about half the thickness dimension of the body portion 82a. If so, the fluctuation of the amount of free radicals passing through the plurality of holes 82a2 can be effectively suppressed.

[0163] The dimensions of the area with multiple holes 82a2, the cross-sectional dimensions of the holes 82a2 in the direction intersecting the thickness direction of the main body 82a, and the number of holes 82a2 can be appropriately changed according to the size of the workpiece 100.

[0164] A flange 82b is provided on the side of the body portion 82a, protruding outward from the body portion 82a. The flange 82b is, for example, frame-shaped and surrounds the side of the body portion 82a.

[0165] When the body portion 82a is inserted into the hole 81b1 of the retaining portion 81b, the flange 82b contacts the end of the retaining portion 81b on the window 23 side. Therefore, the dispersion plate 82 can be detachably held inside the body portion 81a.

[0166] The thickness of the dispersion plate 82 can be set to approximately 10 mm, for example. The dimension of the flange 82b in the direction intersecting the thickness direction can be set to approximately 5 mm, for example. The cross-sectional dimension of the hole 82a2 in the direction intersecting the thickness direction of the body part 82a (the diameter of the hole 82a2) can be set to between 3 mm and 11 mm, for example.

[0167] Here, as mentioned earlier, in plasma processing, the dispersion behavior of free radicals in the space between the dispersion plate 82 and the mounting section 7 may sometimes change as the processing conditions change.

[0168] In the dispersion section 8 of this embodiment, as described above, the dispersion plate 82 is held in a retainer 81 that is detachably disposed inside the chamber 2.

[0169] Therefore, through Figure 3 The length, or dimension H, along the central axis of the retainer 81 determines the distance between the dispersion plate 82 and the mounting portion 7 held in the retainer 81.

[0170] Figure 4 (a) ~ Figure 4 (c) is a schematic cross-sectional view illustrating retainers 181a to 181c with different dimensions H1 to H3.

[0171] In addition, Figure 4 (a) ~ Figure 4 In (c), we set the dimensions as H1 > H2 > H3.

[0172] In this case, the distance between the dispersion plate 82 and the mounting portion 7 is the smallest in the case of the retainer 181a. The distance between the dispersion plate 82 and the mounting portion 7 is the largest in the case of the retainer 181c. The retainers 181a to 181c are formed in a manner that shares the shape of the flange 81c that engages with the bracket 83 and the arrangement of the hole 81a1. That is, the retainers 181a to 181c can be mounted in the chamber 2 via a common (same) bracket 83 by means of the flange 81c that serves as the mounting portion.

[0173] If the distance between the dispersion plate 82 and the mounting portion 7 changes, the dispersion behavior of free radicals in the space between the dispersion plate 82 and the mounting portion 7 can be altered.

[0174] Therefore, if a holder 81 with an appropriate size H is selected according to the change in processing conditions, the dispersion behavior of free radicals in the space between the dispersion plate 82 and the mounting part 7 can be controlled within an allowable range.

[0175] In this case, if the distance between the dispersion plate 82 and the mounting portion 7 becomes too small, the free radicals discharged from the hole 82a2 of the dispersion plate 82 can easily reach the processed object 100 directly. Therefore, the amount of processing (e.g., etching) in the area of ​​the surface of the processed object 100 facing the hole 82a2 is sometimes more than the amount of processing in the area adjacent to the area.

[0176] On the other hand, if the distance between the dispersion plate 82 and the mounting portion 7 becomes too large, the flow of free radicals discharged from the holes 82a2 of the dispersion plate 82 is easily affected by the airflow inside the chamber 2. Therefore, within the surface of the processed material 100, regions with a high amount of arriving free radicals and regions with a low amount of arriving free radicals may sometimes be generated.

[0177] Therefore, the size H of the retainer 81 can be appropriately set by experimentation or simulation for each processing condition.

[0178] In this case, it is sufficient to pre-manufacture various retainers 81 with different sizes H according to the processing conditions.

[0179] That is, the plasma processing apparatus 1 can include any one of a plurality of holders 81 (body part 81a) that are cylindrical and have different dimensions H along the direction of the central axis, which are detachably disposed inside the chamber 2 and facing the mounting part 7.

[0180] In addition, the plasma processing apparatus 1 includes a dispersion plate 82, which is disposed at the end of the body part 81a on the side of the mounting part 7, facing the mounting part 7 and having a plurality of holes 82a2.

[0181] During plasma treatment, depending on the plasma treatment conditions, one of the multiple holders 81 (body part 81a) is selected so that the distance between the mounting part 7 and the dispersion plate 82 is the desired value.

[0182] Furthermore, even if the number of holes 82a2 provided in the dispersion plate 82, the arrangement of holes 82a2, the cross-sectional dimensions of holes 82a2, etc. are changed, the dispersion behavior of free radicals in the space between the dispersion plate 82 and the mounting part 7 can be changed.

[0183] In this case, such as Figure 3 As shown, a plug 82a3 may also be provided inside the hole 82a2. The plug 82a3 may be detachably provided in any of the multiple holes 82a2. In this case, the plug 82a3 may be inserted into the hole 82a2, or the plug 82a3 may be externally threaded and the hole 82a2 may be internally threaded, allowing the plug 82a3 to be screwed into the hole 82a2.

[0184] If a plug 82a3 is provided, the number and configuration of holes 82a2 can be changed arbitrarily.

[0185] Furthermore, even for holes 82a2 of the same diameter, the total area occupied by the holes 82a2 relative to the surface of the body portion 82a changes by altering the spacing between them. That is, when the spacing between the holes 82a2 is narrower than when it is wider, the total area occupied by the holes 82a2 on the body portion 82a is larger. Therefore, it can be said that when the spacing between the holes 82a2 is narrower than when it is wider, free radicals pass more easily through the dispersion plate 82. This change can also alter the dispersion behavior of free radicals.

[0186] Furthermore, even when adjacent holes 82a2 arranged in rows or staggered configurations have the same length of the surface portion of the body portion 82a between them, if the diameter of the holes 82a2 changes, the size of the surface portion of the body portion 82a surrounded by four or three holes 82a2 will also change. Thus, similarly to the above, the dispersion behavior of free radicals can be altered by changing the size of the holes 82a2.

[0187] In the dispersion section 8 of this embodiment, the dispersion plate 82 is detachably disposed inside the holder 81 (body section 81a). Therefore, the dispersion section 8 with appropriate holes 82a2 can be selected according to changes in processing conditions.

[0188] The conditions for hole 82a2 can be appropriately set by experimentation or simulation for each processing condition.

[0189] In this case, it is sufficient to pre-manufacture various dispersion plates 82 with different conditions for holes 82a2 according to the processing conditions.

[0190] Alternatively, various retainers 81 with different sizes H and various dispersion plates 82 with different hole conditions 82a2 can be used in combination.

[0191] That is, by using at least one of a variety of holders 81 with different sizes H and a variety of dispersion plates 82 with different conditions of holes 82a2, the dispersion behavior of free radicals in the space between the dispersion plate 82 and the mounting part 7 can be controlled.

[0192] As explained above, if the dispersion section 8 of this embodiment is used, the yield in plasma processing can be improved even when performing multiple plasma processes with different processing conditions using the same plasma processing apparatus 1.

[0193] Figure 5 This is a schematic cross-sectional view illustrating a retainer 281 in another embodiment.

[0194] like Figure 5 As shown, the retainer 281 has, for example, a body portion 81a, a plurality of retaining portions 81b, and a flange 81c.

[0195] Multiple retaining parts 81b can be arranged side by side along the central axis of the main body part 81a at predetermined intervals.

[0196] The dispersion plate 82 can be provided in any of the plurality of holding parts 81b.

[0197] In this case, if the retainer 281 is divided in a direction intersecting the central axis of the body 81a, it is easy to install the dispersion plate 82 inside the body 81a.

[0198] As the holder 281 in this embodiment, the distance between the dispersing plate 82 and the mounting portion 7 can also be changed according to the change of processing conditions.

[0199] Therefore, the same effect can be obtained from various retainers 81 with different dimensions H.

[0200] (Second Implementation)

[0201] Figure 6 This is a schematic cross-sectional view illustrating the plasma processing apparatus 1a of the second embodiment.

[0202] like Figure 6 As shown, the plasma processing apparatus 1a includes, for example, a chamber 2, a power supply unit 3, a power supply unit 4, a pressure reducing unit 5, a gas supply unit 6, a mounting unit 7, a dispersion unit 18, and a controller 9.

[0203] The dispersing section 18 has a dispersing plate 82 (equivalent to an example of a second dispersing plate), a retainer 84, and a positioning section 85.

[0204] The retainer 84 is, for example, cylindrical. The retainer 84 may be identical to the body portion 81a of the retainer 81. The end of the retainer 84 on the mounting portion 7 side is connected to the edge of the dispersion plate 82. The retainer 84 and the dispersion plate 82 may be integrally formed.

[0205] The retainer 84 is movably disposed inside the hole 2d provided at the end of the chamber 2 on the side of the window 23. The central axis of the hole 2d may, for example, be substantially coaxial with the central axis of the mounting portion 7 (electrostatic chuck 71). The retainer 84 is provided with a hole 84a1, which serves as a supply port for supplying the process gas G supplied via the nozzle 61 into the interior of the retainer 84 when the retainer 84 is moved to a position facing the nozzle 61 by changing the position of the dispersion plate 82 (described later) relative to the mounting portion 7.

[0206] The positioning part 85 holds the holder 84 by contacting and supporting it, thereby holding the dispersion plate 82. The positioning part 85 fixes the distance between the dispersion plate 82 and the mounting part 7 by holding the holder 84. The positioning part 85 may include, for example, a pin 85a that contacts the holder 84, and a drive part 85b such as a solenoid or cylinder that allows the pin 85a to move forward or backward toward the holder 84.

[0207] In this case, it can be provided in the recess of the opening on the outer wall of the retainer 84, or as... Figure 7 of (a) Figure 7As shown in (b), the fixing hole 84a between the outer and inner walls of the through retainer 84 allows the front end of the pin 85a of the positioning part 85 to be inserted into the recess or hole. In this way, the positioning part 85 securely fixes the retainer 84.

[0208] That is, the dispersion plate 82 is disposed inside the chamber 2 facing the mounting portion 7, has multiple holes 82a2, and its position relative to the mounting portion 7 is variable. Figure 3 Similarly, the dispersion plate 82 shown may also have a recess 82a1 at its end on the side opposite to the mounting portion 7. In this case, a plurality of holes 82a2 may be provided at the bottom of the recess 82a1. In addition, a plug 82a3 that can be detachably provided in any of the plurality of holes 82a2 may also be provided.

[0209] The gas supply unit 6 can supply process gas G into the interior of the chamber 2 and to the area on the side of the dispersion plate 82 opposite to the side of the mounting unit 7.

[0210] The plasma generation unit (power supply unit 3) can generate plasma in the area inside the chamber 2 where the process gas G is supplied.

[0211] In addition, the multiple top pins 75 provided in the mounting section 7 can deliver the processed item 100, thereby changing the position of the dispersing plate 82 relative to the mounting section 7.

[0212] When performing plasma treatment using the plasma treatment apparatus 1a, the position of the dispersion plate 82 relative to the mounting section 7 is changed by multiple top pins 75 according to the plasma treatment conditions, so that the distance between the mounting section 7 and the dispersion plate 82 becomes a desired value. In addition, the positioning section 85 holds the dispersion plate 82 when its position changes.

[0213] Figure 7 of (a) Figure 7 (b) is a schematic cross-sectional view illustrating the setting of the distance between the dispersion plate 82 and the mounting part 7.

[0214] The mounting portion 7 can be used when the distance between the dispersing plate 82 and the mounting portion 7 is set.

[0215] For example, multiple top pins 75 are raised and come into contact with the dispersion plate 82 of the dispersion section 18.

[0216] Next, the positioning part 85 releases its hold on the retainer 84. The retainer 84 is then supported by the top pin 75.

[0217] Next, as Figure 7 of (a) Figure 7As shown in (b), the multiple top pins 75 are raised or lowered so that the distance between the dispersion plate 82 and the mounting part 7 becomes a predetermined value L1 and a predetermined value L2.

[0218] Next, the retainer 84 is fixed by the positioning part 85.

[0219] Next, the multiple top pins 75 are lowered, for example, so that the front ends of the multiple top pins 75 are located inside the mounting portion 7.

[0220] As described above, the distance between the dispersion plate 82 and the mounting portion 7 can be set to a desired value.

[0221] As the dispersion section 18 in this embodiment, it can also achieve the same effect as the dispersion section 8.

[0222] In this case, similar to the case of the dispersion section 8, the conditions of the holes 82a2 can be further modified. For example, the number and configuration of the holes 82a2 can be further set using the plug 82a3.

[0223] As explained above, if the dispersion section 18 of this embodiment is used, the yield in plasma processing can be improved even when performing multiple plasma processes with different processing conditions using the same plasma processing apparatus 1a.

[0224] Next, plasma processing using plasma processing apparatus 1 and plasma processing apparatus 1a will be illustrated.

[0225] In the event of a change in the plasma processing conditions, as previously described, a holder 81 with the desired size H is selected from a variety of holders 81 and installed, or the distance between the dispersion plate 82 and the mounting portion 7 is set using multiple top pins 75.

[0226] Next, for example using a conveying device (not shown), the pre-plasma-processed material 100 is moved into the interior of the chamber 2. After being moved in, the pre-plasma-processed material 100 is delivered from the conveying device to the mounting section 7 using multiple top pins 75.

[0227] Next, plasma treatment is performed on the pre-plasma treatment material 100 placed in the mounting section 7.

[0228] Next, the plasma-treated workpiece 100 is delivered from the loading section 7 to the transport device using multiple top pins 75. The plasma-treated workpiece 100 delivered to the transport device is then moved out of the chamber 2 by the transport device.

[0229] Hereinafter, plasma treatment can be performed on multiple items 100 by repeating the above steps. Furthermore, known techniques can be applied to the delivery of items 100 or the plasma treatment itself, therefore detailed descriptions are omitted.

[0230] That is, the plasma processing method using plasma processing device 1 may include the following steps.

[0231] According to the processing conditions of plasma processing, a process is to select one body part 81a from a plurality of body parts 81a so that the distance between the mounting part 7 and the dispersion plate 82 is the desired value.

[0232] The process of placing the selected body part 81a inside the chamber 2.

[0233] The process of supplying process gas G to the interior of the main body 81a located inside the chamber 2.

[0234] The process of generating plasma inside the main body 81a.

[0235] Furthermore, the details of each process may be the same as those described above, therefore detailed descriptions are omitted.

[0236] In addition, the plasma processing method using plasma processing apparatus 1a may include the following steps.

[0237] According to the plasma processing conditions, the position of the dispersion plate 82 relative to the mounting portion 7 is changed by multiple top pins 75 so that the distance between the mounting portion 7 and the dispersion plate 82 becomes the desired value.

[0238] The process of holding the dispersing plate 82 whose position has changed by the positioning part 85.

[0239] The process of supplying process gas G into the interior of chamber 2 and to the area on the side of dispersion plate 82 opposite to the side of mounting portion 7.

[0240] The process of generating plasma in an area supplied with process gas G.

[0241] Furthermore, the details of each process may be the same as those described above, therefore detailed descriptions are omitted.

[0242] The embodiments have been illustrated above. However, the present invention is not limited to these descriptions.

[0243] Regarding the embodiments described, any embodiments obtained by adding, deleting, or designing constituent elements, or by adding, omitting, or changing the conditions of processes, as long as they include the features of the present invention, are also included within the scope of the present invention.

[0244] Furthermore, the elements included in each of the embodiments can be combined within the possible range, and any embodiment that combines these elements is also included within the scope of the present invention as long as it contains the features of the present invention.

Claims

1. A plasma processing apparatus, comprising: The chamber is designed to maintain an atmosphere that has been depressurized to below atmospheric pressure. A loading section is provided inside the chamber and is capable of loading the processed items; Multiple body parts are detachably disposed inside the chamber facing the mounting part, are cylindrical in shape, and have different dimensions along the central axis. The first dispersion plate is disposed at the end of the body portion on the side of the mounting portion, facing the mounting portion and having a plurality of holes; The pressure relief section is capable of reducing pressure inside the main body section; The gas supply unit is capable of supplying process gas into the interior of the main body. as well as The plasma generating unit is capable of generating plasma inside the main body. During plasma treatment, one of the multiple body parts is selected from the plasma treatment conditions so that the distance between the mounting part and the first dispersion plate is a desired value.

2. The plasma processing apparatus according to claim 1, wherein, The first dispersion plate is detachably mounted on the main body.

3. The plasma processing apparatus according to claim 1 or 2, wherein, The first dispersion plate has a recessed portion with an opening at one end on the side opposite to the mounting portion. The plurality of holes are provided at the bottom of the recess.

4. The plasma processing apparatus according to claim 1 or 2, further comprising a plug detachably disposed in any of the plurality of holes.

5. A plasma processing apparatus, comprising: The chamber is designed to maintain an atmosphere that has been depressurized to below atmospheric pressure. A loading section is provided inside the chamber and is capable of loading the processed items; The second dispersion plate is disposed inside the chamber facing the mounting portion, has multiple holes, and can change its position relative to the mounting portion; The positioning part is capable of holding the second dispersing plate; The pressure relief unit is capable of reducing pressure inside the chamber; The gas supply unit is capable of supplying process gas to the interior of the chamber and to the region located on the side of the second dispersion plate opposite to the mounting section side. as well as The plasma generating unit is capable of generating plasma in the region within the chamber where the process gas is supplied. The mounting portion has a plurality of top pins that change the position of the second dispersion plate relative to the mounting portion. During plasma treatment, the position of the second dispersion plate relative to the mounting portion is changed by the plurality of top pins according to the plasma treatment conditions, so that the distance between the mounting portion and the second dispersion plate becomes a desired value. The positioning part maintains the second dispersion plate whose position has changed.

6. The plasma processing apparatus according to claim 5, wherein, The second dispersion plate has a recessed portion with an opening at one end on the side opposite to the mounting portion. The plurality of holes are provided at the bottom of the recess.

7. The plasma processing apparatus according to claim 5 or 6, further comprising a plug detachably disposed in any of the plurality of holes.

8. A plasma processing apparatus, comprising: The chamber is designed to maintain an atmosphere that has been depressurized to below atmospheric pressure. A loading section is provided inside the chamber and is capable of loading the processed items; Multiple body parts are detachably mounted and disposed facing the mounting part inside the chamber, are cylindrical in shape, and have different dimensions along the central axis. The first dispersion plate is disposed at the end of the body portion on the side of the mounting portion, facing the mounting portion and having a plurality of holes; The mounting portion is provided at the end of the main body on the side opposite to the mounting portion side and is formed in a common shape in a plurality of the main bodies; A fixing part is capable of installing one of the multiple body parts, selected from the multiple body parts according to the processing conditions of plasma treatment, into the chamber via the mounting part; The pressure relief section is capable of reducing pressure inside the main body section; The gas supply unit is capable of supplying process gas into the interior of the main body. as well as The plasma generating unit is capable of generating plasma inside the main body.

9. A plasma treatment method, comprising performing plasma treatment on a workpiece using a plasma treatment apparatus as described in any one of claims 1, 2, and 8, the plasma treatment method comprising: According to the processing conditions of the plasma treatment, a process is to select one of the multiple body parts so that the distance between the mounting part and the first dispersion plate is a desired value. The process of placing the selected body part inside the chamber; The process of supplying process gas to the interior of the body portion disposed inside the chamber; and The process of generating plasma inside the main body.

10. A plasma treatment method, comprising performing plasma treatment on a workpiece using the plasma treatment apparatus as described in claim 5 or 6, the plasma treatment method comprising: According to the processing conditions of the plasma treatment, a process is performed in which the position of the second dispersion plate relative to the mounting portion is changed by multiple top pins so that the distance between the mounting portion and the second dispersion plate becomes a desired value. The process of maintaining the position of the second dispersion plate, which has changed, by means of a positioning part; The process of supplying process gas into the interior of the chamber and to the region located on the side opposite to the mounting portion of the second dispersion plate; and The process of generating plasma in a region supplied with the process gas.

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