Power amplification module

Abstract

A power amplifier module is provided to suppress the scaling up of power amplifier modules including common-base transistors. It comprises: a first resistor; a first amplifying transistor whose emitter is input to the first signal, which is a differential signal (either a first signal or a second signal), outputs a first output signal from its collector, and its base is biased through the first resistor; a second resistor; a second amplifying transistor whose emitter is input to the second signal, outputs a second output signal from its collector, and its base is biased through the second resistor; and a capacitor, one end of which is electrically connected to the base of the first amplifying transistor, and the other end of which is electrically connected to the base of the second amplifying transistor, the capacitor being connected in parallel with the first resistor and the second resistor.

Description

Technical Field

[0001] This disclosure relates to a power amplifier module. Background Technology

[0002] A power amplifier module is disclosed that amplifies in multiple stages to ensure the desired gain (see Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: US Patent No. 10,658,991 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] Patent Document 1 describes a power amplifier module that amplifies high-frequency signals using a common-base amplifying transistor located in the driver stage. Furthermore, the power amplifier module further amplifies the amplified high-frequency signal using a power stage amplifying transistor before outputting the output signal. Because a common-base amplifying transistor is used in the power amplifier module, the base needs to be AC ​​grounded. Therefore, a capacitor is placed between the base of the common-base amplifying transistor and ground. However, when the operating frequency of the common-base amplifying transistor is low, the capacitor needs to be increased in size, thus causing a problem of increasing the size of the power amplifier module.

[0008] Therefore, the purpose of this disclosure is to suppress the enlargement of power amplifier modules that include common-base amplifying transistors.

[0009] Solution for solving the problem

[0010] One aspect of the present invention relates to a power amplifier module comprising: a first resistor; a first amplifying transistor whose emitter is input to the first signal, which is a differential signal, and whose collector outputs a first output signal, and whose base is biased through the first resistor; a second resistor; a second amplifying transistor whose emitter is input to the second signal, which outputs a second output signal, and whose base is biased through the second resistor; and a capacitor, one end of which is electrically connected to the base of the first amplifying transistor and the other end of which is electrically connected to the base of the second amplifying transistor, the capacitor being connected in parallel with the first resistor and the second resistor.

[0011] The effects of the invention

[0012] According to this disclosure, it is possible to suppress the enlargement of power amplifier modules, including common-base amplifying transistors. Attached Figure Description

[0013] Figure 1 This is a diagram illustrating an example of the structure of the power amplifier module according to this embodiment.

[0014] Figure 2 This is a diagram illustrating an example of the structure of the parallel-connected amplifier circuit according to this embodiment.

[0015] Figure 3 This is a diagram illustrating an example of the structure of the power amplifier module involved in the first modified example.

[0016] Figure 4 This is a diagram illustrating an example of the structure of the power amplifier module involved in the second variation.

[0017] Figure 5 This is a diagram illustrating an example of the structure of the power amplifier module involved in the third variation.

[0018] Figure 6 This is a diagram illustrating an example of the structure of the power amplifier module involved in the fourth variation.

[0019] Figure 7 This is a diagram illustrating an example of the structure of the power amplifier module involved in the fifth variation.

[0020] Figure 8 This is a diagram showing an example of the configuration of the components in a power amplifier module. Detailed Implementation

[0021] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. Here, the same circuit elements are designated by the same reference numerals, and repeated descriptions are omitted.

[0022] ===Structure of Power Amplifier Module 100===

[0023] Reference Figure 1 The outline of the power amplifier module 100 involved in this embodiment will be described. Figure 1This diagram illustrates a general outline of the structure of the power amplifier module 100 according to this embodiment. The power amplifier module 100, for example, is mounted in a mobile communication device such as a portable telephone, amplifies the power of the input signal RFin to the level required for transmission to a base station, and outputs it as the output signal RFout. The input signal RFin is, for example, a radio frequency (RF) signal modulated according to a prescribed communication method by an RFIC (Radio Frequency Integrated Circuit). The communication standard of the input signal RFin includes, for example, 2G (second-generation mobile communication system), 3G (third-generation mobile communication system), 4G (fourth-generation mobile communication system), 5G (fifth-generation mobile communication system), 5G NR (New Radio), LTE (Long Term Evolution)-FDD (Frequency Division Duplex), LTE-TDD (Time Division Duplex), LTE-Advanced, or LTE-Advanced Pro, 6G (sixth-generation mobile communication system), etc., with frequencies ranging from hundreds of MHz to tens of GHz. Furthermore, the communication standards and frequencies for the input signal RFin are not limited to these.

[0024] Reference Figure 1 A general overview of the power amplifier module 100 is provided. For example... Figure 1 As shown, the power amplifier module 100 includes amplifying transistors 111 and 112, which are bipolar transistors with common bases. In the power amplifier module 100, the differential signal output from the converter 140 is amplified by the amplifying transistors 111 and 112. In the power amplifier module 100, a capacitor 115 is disposed between the bases of the amplifying transistors 111 and 112. Therefore, the power amplifier module 100 can virtually AC ground the bases of the amplifying transistors 111 and 112 using the capacitor 115, thus reducing the capacitance value of the capacitor used for AC grounding and thus suppressing circuit enlargement.

[0025] The following explanation will use the signal input to amplifier transistor 111 as the first signal RF10 and the signal input to amplifier transistor 112 as the second signal RF20.

[0026] Furthermore, in the power amplifier module 100, the center tap of the secondary coil 142 of the converter 140 that outputs the differential signal is connected to ground. The emitters of the common-base amplifying transistors 111 and 112 are each electrically connected to the converter 140. That is, the emitters of the amplifying transistors 111 and 112 are each connected to ground. Thus, in the power amplifier module 100, the emitters of the amplifying transistors 111 and 112 are DC-connected through the converter 140, therefore, there is no need to set up an LC parallel resonant circuit, thus suppressing the enlargement of the circuit.

[0027] Furthermore, in the power amplifier module 100, the first resistor 113 is electrically connected to the base of the amplifying transistor 111, and the second resistor 114 is electrically connected to the base of the amplifying transistor 112. A bias is supplied to the node between the first resistor 113 and the second resistor 114. Thus, in the power amplifier module 100, the bases of the bipolar transistors 111 and 112 are electrically connected to each other via resistors, thereby avoiding uneven operation caused by the self-heating coupling of the bipolar transistors.

[0028] Reference Figure 1 The structure of the power amplifier module 100 will be described below. Figure 1 As shown, the power amplifier module 100 includes an amplifier circuit 110, a bias circuit 120, an output circuit 130, and a converter 140.

[0029] Amplifier circuit 110 is a circuit that amplifies the first signal RF10 and the second signal RF20 to output a first output signal RF11 and a second output signal RF21. Amplifier circuit 110 includes, for example, amplifying transistor 111, amplifying transistor 112, a first resistor 113, a second resistor 114, and a capacitor 115.

[0030] Amplifying transistor 111 is a common-base bipolar transistor. The emitter of amplifying transistor 111 is input with a first signal RF10, and the collector outputs a first output signal RF11. The base is biased from the bias circuit 120 through a first resistor 113.

[0031] Amplifying transistor 112 is a common-base bipolar transistor. The emitter of amplifying transistor 112 is input with a second signal RF20, and the collector outputs a second output signal RF21. The base is biased from the bias circuit 120 through the second resistor 114.

[0032] The first resistor 113 is, for example, a resistive element. One end of the first resistor 113 is electrically connected to the base of the amplifying transistor 111, and the other end is electrically connected to node N1.

[0033] The second resistor 114 is, for example, a resistive element. One end of the second resistor 114 is electrically connected to the base of the amplifying transistor 112, and the other end is electrically connected to node N1.

[0034] The amplifier circuit 110 has a structure in which the bases of amplifying transistors 111 and 112 are respectively biased from the bias circuit 120 through various resistive elements, thereby suppressing the self-heating of amplifying transistors 111 and 112. If the amplifier circuit 110 generates self-heat, the circuit operation becomes uneven. That is, the power amplifier module 100 can avoid uneven circuit operation by suppressing the self-heating of the amplifier circuit 110.

[0035] One end of capacitor 115 is electrically connected to the base of amplifying transistor 111, and the other end is electrically connected to the base of amplifying transistor 112.

[0036] By incorporating capacitor 115, amplifier circuit 110 can virtually AC ground the bases of amplifying transistors 111 and 112. Therefore, power amplifier module 100 can reduce the total capacitance of the capacitors used for AC grounding within the module, thus preventing circuit enlargement.

[0037] The bias circuit 120 is a circuit that supplies bias to the amplifier circuit 110.

[0038] Output circuit 130 is a circuit that combines the first output signal RF11 and the second output signal RF21 output from amplifier circuit 110 to output the output signal RFout from terminal Tout. Output circuit 130 is, for example, a balun consisting of a primary coil 131 and a secondary coil 132 magnetically coupled to the primary coil 131. One end of the primary coil 131, terminal T11, receives the first output signal RF11, and the other end, terminal T21, receives the second output signal RF21. The center tap is supplied with power Vcc. One end of the secondary coil 132 is connected to ground, and the other end, terminal Tout, outputs the output signal RFout. Alternatively, output circuit 130 may not be provided. That is, power amplifier module 100 may also output the first output signal RF11 and the second output signal RF21 as differential signals to a subsequent differential amplifier circuit.

[0039] The converter 140 receives an input signal RFin and outputs a first signal RF10 and a second signal RF20 as differential signals to the amplifier circuit 110. The converter 140 is, for example, a balun consisting of a primary coil 141 and a secondary coil 142 magnetically coupled to the primary coil 141. One end of the primary coil 141, terminal Tin, receives the input signal RFin, and the other end is connected to ground. The secondary coil 142 outputs the first signal RF10 from one end, terminal T10, and the second signal RF20 from the other end, terminal T20; the center tap St is connected to ground. Furthermore, impedance transformation can be performed on the converter 140 by adjusting the turns ratio of the primary coil 141 to the secondary coil 142.

[0040] By connecting the center tap St of the secondary coil 142 of the converter 140 to ground, the power amplifier module 100 enables the emitters of the amplifying transistors 111 and 112 to be DC grounded. Therefore, the power amplifier module 100 no longer requires an LC parallel resonant circuit for the amplifying transistors 111 and 112, thus reducing the need for circuit enlargement.

[0041] Next, refer to Figure 2 The structure of multiple amplifier circuits 110 connected in parallel in the power amplifier module 100 is described.

[0042] like Figure 2 As shown, the power amplifier module 100 can also be constructed by connecting multiple amplifier circuits 110 in parallel. In this case, in the multiple amplifier circuits 110, the emitters of each amplifying transistor 111 are electrically connected to node N2, and the collectors of each amplifying transistor 111 are electrically connected to node N3. Additionally, in the multiple amplifier circuits 110, the emitters of each amplifying transistor 112 are electrically connected to node N4, and the collectors of each amplifying transistor 111 are electrically connected to node N5. Furthermore, node N1 between the first resistor 113 and the second resistor 114 in the multiple amplifier circuits 110 is electrically connected to node N6.

[0043] Thus, in the power amplifier module 100, the bases of the amplifying transistors 111 of each of the plurality of amplifier circuits 110 are biased from the bias circuit 120 through the first resistor 113. In addition, the bases of the amplifying transistors 112 of each of the plurality of amplifier circuits 110 are biased from the bias circuit 120 through the second resistor 114.

[0044] That is, in the power amplifier module 100, the bases of the plurality of amplifying transistors 111 are electrically connected through the respective first resistors 113. In this case, even if the base-emitter voltage Vbe of any one of the amplifying transistors 111 in the plurality of amplifying circuits 110 heats up, resulting in uneven operation with excessive current flow, the current can be restored to its normal value by the voltage drop caused by the first resistor 113. The same applies to the plurality of amplifying transistors 112 and the second resistor 114.

[0045] Therefore, uneven operation can be suppressed in the power amplifier module 100.

[0046] <<First Variation>>

[0047] Next, refer to Figure 3 The structure of the power amplifier module 100a involved in the first modified example will be described. Figure 3 This is a diagram illustrating an example of the structure of the power amplifier module 100a involved in the first modified example. The converter 140 has a different structure compared to the power amplifier module 100. Hereinafter, unless otherwise specified, it will be assumed to be the same as the power amplifier module 100.

[0048] like Figure 3 As shown, converter 140a includes a first transmission line transformer 141a and a second transmission line transformer 142a, which together constitute a balun. Converter 140a is, for example, a balun using a Guanella TLT (Transmission Line Transformer).

[0049] The first transmission line transformer 141a is a transformer capable of impedance transformation. The first transmission line transformer 141a includes a first transmission line TL1 and a second transmission line TL2. The first transmission line TL1 receives the input signal RFI at one end through a capacitor C1, and the other end is electrically connected to the emitter of an amplifying transistor 111. The second transmission line TL2 is magnetically coupled to the first transmission line TL1, and one end is electrically connected to the emitter of an amplifying transistor 112. Furthermore, in Figure 3 The diagram shows that the first transmission line TL1 and the second transmission line TL2 are each composed of one transmission line, but this is not a limitation. For example, the first transmission line TL1 and the second transmission line TL2 can each be composed of multiple transmission lines. That is, the first transmission line transformer 141a is configured to be able to adjust the impedance transformation ratio.

[0050] The second transmission line transformer 142a is a transformer capable of impedance transformation. The second transmission line transformer 142a includes a third transmission line TL3 and a fourth transmission line TL4. One end of the third transmission line TL3 is connected to ground, and the other end is electrically connected to the emitter of the amplifying transistor 112. The fourth transmission line TL4 is magnetically coupled to the third transmission line TL3, with one end electrically connected to the other end of the second transmission line TL2, and the other end electrically connected to the emitter of the amplifying transistor 111. Furthermore, in Figure 3 The diagram shows that the third transmission line TL3 and the fourth transmission line TL4 are each composed of one transmission line, but this is not a limitation. For example, the third transmission line TL3 and the fourth transmission line TL4 can each be composed of multiple transmission lines. That is, the second transmission line transformer 142a is configured to be able to adjust the impedance transformation ratio.

[0051] Thus, in the power amplifier module 100a, since the converter 140a is connected to ground, there is no need to set up an LC parallel resonant circuit in the amplifier circuit 110. As a result, the power amplifier module 100a can suppress the increase in circuit size.

[0052] Furthermore, by configuring the power amplifier module 100a to be able to adjust the number of each of the first transmission lines TL1 to the fourth transmission lines TL4, the impedance transformation ratio can be adjusted, thereby expanding the application range of the power amplifier module 100a.

[0053] Furthermore, the power amplifier module 100a uses a transmission line transformer, thus enabling it to be applied to higher frequency and wider bandwidth signals compared to the power amplifier module 100.

[0054] <<Second Variation>>

[0055] Next, refer to Figure 4 The structure of the power amplifier module 100b involved in the second variation will be described. Figure 4 This is a diagram illustrating an example of the structure of the power amplifier module 100b involved in the second variation. The converter 140 differs in structure from the power amplifier module 100. Hereinafter, unless otherwise specified, it will be assumed to be the same as the power amplifier module 100.

[0056] like Figure 4 As shown, converter 140b includes a third transmission line transformer 141b and a balun converter 142b.

[0057] The third transmission line transformer 141b is a transformer capable of impedance transformation. The third transmission line transformer 141b includes a fifth transmission line TL5 and a sixth transmission line TL6. The fifth transmission line TL5 receives the input signal RFin from one end through capacitor C2. One end of the sixth transmission line TL6 is electrically connected to the other end of the fifth transmission line TL5, and the other end is connected to ground. That is, the third transmission line transformer 141b is an Unun using a Ruthroff TLT. Furthermore, in Figure 4 The diagram shows that the fifth transmission line TL5 and the sixth transmission line TL6 are each composed of one transmission line, but this is not a limitation. For example, the fifth transmission line TL5 and the sixth transmission line TL6 can each be composed of multiple transmission lines. That is, the third transmission line transformer 141b is configured to be able to adjust the impedance transformation ratio.

[0058] The balun 142b outputs a first signal RF10 and a second signal RF20. The balun 142b includes a seventh transmission line TL7 and an eighth transmission line TL8. One end of the seventh transmission line TL7 is electrically connected to the other end of the fifth transmission line TL5, and the other end is electrically connected to the emitter of the amplifying transistor 111. The first signal RF10 is output from the other end of the seventh transmission line TL7 to the emitter of the amplifying transistor 111. One end of the eighth transmission line TL8 is electrically connected to the other end of the sixth transmission line TL6 and ground, and the other end is electrically connected to the emitter of the amplifying transistor 112. The eighth transmission line TL8 is magnetically coupled to the seventh transmission line TL7. That is, the balun 142b is a balun using a CMC (Common Mode Choke). Furthermore, in Figure 4 The diagram shows that the seventh transmission line TL7 and the eighth transmission line TL8 are each composed of one transmission line, but this is not a limitation. For example, the seventh transmission line TL7 and the eighth transmission line TL8 can each be composed of multiple transmission lines. That is, the balun 142b is configured to be able to adjust the impedance transformation ratio.

[0059] Thus, in the power amplifier module 100b, since the converter 140b is connected to ground, there is no need to set up an LC parallel resonant circuit in the amplifier circuit 110. As a result, the power amplifier module 100a can suppress the increase in circuit size.

[0060] Furthermore, by configuring the power amplifier module 100b to be able to adjust the number of each of the fifth transmission line TL5 to the eighth transmission line TL8, the impedance transformation ratio can be adjusted, thus expanding the application range of the power amplifier module 100b.

[0061] Furthermore, the power amplifier module 100b uses a transmission line transformer, thus enabling it to be applied to higher frequency and wider bandwidth signals compared to the power amplifier module 100.

[0062] <<Third Variation>>

[0063] Next, refer to Figure 5 The structure of the power amplifier module 100c involved in the third variation will be described. Figure 5 This is a diagram illustrating an example of the structure of the power amplifier module 100c involved in the third modification. The power amplifier module 100c differs from the power amplifier module 100 in that the input signal to the converter 140 is a differential signal. Hereinafter, unless otherwise specified, it will be assumed to be the same as the power amplifier module 100.

[0064] like Figure 5 As shown, the first input signal RFin10 and the second input signal RFin20, which are differential signals, are input to the converter 140c. After performing impedance transformation, the converter 140c outputs the first signal RF10 and the second signal RF20.

[0065] The converter 140c includes a primary coil 141c and a secondary coil 142c. One end of the primary coil 141c, terminal Tin1, receives a first input signal RFin10, and the other end, terminal Tin2, receives a second input signal RFin20. The center tap St1 is supplied with power Vcc. The secondary coil 142c outputs the first signal RF10 from one end, terminal T10, and the second signal RF20 from the other end, terminal T20. The center tap St2 is connected to ground. The secondary coil 142c is magnetically coupled to the primary coil 141c. Furthermore, impedance transformation can be performed by adjusting the turns ratio of the primary coil 141c and the secondary coil 142c with the converter 140c.

[0066] Thus, in the power amplifier module 100c, since the converter 140c is connected to ground, there is no need to set up an LC parallel resonant circuit in the amplifier circuit 110. As a result, the power amplifier module 100c can suppress the increase in circuit size.

[0067] In addition, the power amplifier module 100c can be directly connected to the primary coil 141c of the converter 140c, which is the same differential amplifier circuit as the amplifier circuit 110, thus improving the overall gain of the module.

[0068] <<Fourth Variation>>

[0069] Next, refer to Figure 6 The structure of the power amplifier module 100d involved in the fourth variation will be described. Figure 6 This is a diagram illustrating an example of the structure of the power amplifier module 100d involved in the fourth variation. The power amplifier module 100d differs from the power amplifier module 100 in that the input signal to the converter 140 is a differential signal. Hereinafter, unless otherwise specified, it will be assumed to be the same as the power amplifier module 100.

[0070] like Figure 6 As shown, the first input signal RFin10 and the second input signal RFin20, which are differential signals, are respectively input to the converter 140d through terminals Tin1 and Tin2. After performing impedance transformation, the converter 140d outputs the first signal RF10 and the second signal RF20.

[0071] The converter 140d is, for example, a transformer using a Guanella TLT. Specifically, the converter 140d includes a fourth transmission line transformer 141d and a fifth transmission line transformer 142d.

[0072] The fourth transmission line transformer 141d is a transformer capable of impedance transformation. The fourth transmission line transformer 141d includes a ninth transmission line TL9 and a tenth transmission line TL10. The ninth transmission line TL9 receives the first input signal RFin10 at one end via capacitor C3, and the other end is electrically connected to the emitter of amplifying transistor 111. One end of the tenth transmission line TL10 is electrically connected to the emitter of amplifying transistor 112, and the other end is connected to ground. The tenth transmission line TL10 and the ninth transmission line TL9 are magnetically coupled.

[0073] The fifth transmission line transformer 142d is a transformer capable of impedance transformation. The fifth transmission line transformer 142d includes an eleventh transmission line TL11 and a twelfth transmission line TL12. The eleventh transmission line TL11 receives the second input signal RFin20 at one end via capacitor C4, and the other end is electrically connected to the emitter of the amplifying transistor 112. One end of the twelfth transmission line TL12 is connected to the other end of the tenth transmission line and ground, and the other end is electrically connected to the emitter of the amplifying transistor 111. The twelfth transmission line TL12 is magnetically coupled to the eleventh transmission line TL11.

[0074] Thus, in the power amplifier module 100d, since the converter 140d is connected to ground, there is no need to set up an LC parallel resonant circuit in the amplifier circuit 110. As a result, the power amplifier module 100d can suppress the increase in circuit size.

[0075] Furthermore, by configuring the power amplifier module 100d to be able to adjust the number of each of the ninth transmission line TL9 to the twelfth transmission line TL12, the impedance transformation ratio can be adjusted, thus expanding the application range of the power amplifier module 100d.

[0076] Furthermore, the power amplifier module 100d uses a transmission line transformer, thus enabling it to be applied to higher frequency and wider bandwidth signals compared to the power amplifier module 100.

[0077] In addition, the power amplifier module 100d can be directly connected to the primary side of the converter 140d with the same differential amplifier circuit as the amplifier circuit 110, thus improving the overall gain of the module.

[0078] <<Fifth Variation>>

[0079] Next, refer to Figure 7 The structure of the power amplifier module 100e involved in the fifth variation will be described. Figure 7 This is a diagram illustrating an example of the structure of the power amplifier module 100e involved in the fifth modification. The power amplifier module 100e differs from the power amplifier module 100 in that the input signal to the converter 140 is a differential signal. Hereinafter, unless otherwise specified, it will be assumed to be the same as the power amplifier module 100.

[0080] like Figure 7 As shown, the first input signal RFin10 and the second input signal RFin20, which are differential signals, are respectively input to the converter 140e through terminals Tin1 and Tin2. After performing impedance transformation, the converter 140e outputs the first signal RF10 and the second signal RF20.

[0081] The converter 140e is, for example, a transformer that uses a Ruthroff TLT. Specifically, the converter 140e includes a sixth transmission line transformer 141e and a seventh transmission line transformer 142e.

[0082] The sixth transmission line transformer 141e is a transformer capable of impedance transformation. The sixth transmission line transformer 141e includes a thirteenth transmission line TL13 and a fourteenth transmission line TL14. The thirteenth transmission line TL13 receives the first input signal RFin10 from one end through capacitor C5. One end of the fourteenth transmission line TL14 is electrically connected to the other end of the thirteenth transmission line TL13, and the other end is connected to ground. The fourteenth transmission line TL14 and the thirteenth transmission line TL13 are magnetically coupled.

[0083] The seventh transmission line transformer 142e is a transformer capable of impedance transformation. The seventh transmission line transformer 142e includes the fifteenth transmission line TL15 and the sixteenth transmission line TL16. One end of the fifteenth transmission line TL15 receives the second input signal RFin20 through capacitor C6. One end of the sixteenth transmission line TL16 is electrically connected to the other end of the fifteenth transmission line TL15, and the other end is electrically connected to the other end of the fourteenth transmission line TL14 and ground.

[0084] Thus, in the power amplifier module 100e, since the converter 140e is connected to ground, there is no need to set up an LC parallel resonant circuit in the amplifier circuit 110. As a result, the power amplifier module 100e can suppress the increase in circuit size.

[0085] Furthermore, by configuring the power amplifier module 100e to be able to adjust the number of each of the thirteenth transmission line TL13 to the sixteenth transmission line TL16, the impedance transformation ratio can be adjusted, thus expanding the application range of the power amplifier module 100e.

[0086] Furthermore, the power amplifier module 100e uses a transmission line transformer, thus enabling it to be applied to higher frequency and wider bandwidth signals compared to the power amplifier module 100.

[0087] In addition, the power amplifier module 100e can be directly connected to the primary side of the converter 140e with the same differential amplifier circuit as the amplifier circuit 110, thus improving the overall gain of the module.

[0088] <<Configuration>>

[0089] Next, refer to Figure 8 An example of the configuration of the components of the power amplifier module 100 will be described. Figure 8 This diagram shows an example of the arrangement of the components in the power amplifier module 100. Hereinafter, the direction along the main surface of the substrate will be defined as the X direction and the Y direction, and the direction orthogonal to the X direction and the Y direction will be defined as the Z direction. In addition, the view from the Z direction will be referred to as "top view".

[0090] exist Figure 8 The image shows a power amplifier module 100 with multiple amplifier circuits 110 connected in parallel. Figure 8 In the diagram, viewed from above, multiple amplifier circuits 110 are arranged along the Y-direction. That is, multiple amplifier transistors 111 are arranged in a straight line along the Y-direction. Similarly, multiple amplifier transistors 112 are arranged in a straight line along the Y-direction. For example, the multiple amplifier transistors 111 and 112 are arranged such that their respective center lines along the Y-direction overlap.

[0091] Viewed from above, multiple amplifying transistors 111 and 112 are symmetrically arranged such that a capacitor 115 is sandwiched between them along the X-direction. Specifically, the multiple amplifying transistors 111 are arranged such that the extension of their base Tb is minimized relative to the capacitor 115. For example, the multiple amplifying transistors 111 are respectively positioned at their emitter Te and collector Tc (in... Figure 8 The base Tb is positioned between the emitter Te and the capacitor 115. Multiple amplifying transistors 112 are similarly configured.

[0092] At least a portion of the emitter and collector of each of the plurality of amplifying transistors 111 is configured to overlap with a first bump 1 when viewed from above. Additionally, at least a portion of the emitter and collector of each of the plurality of amplifying transistors 112 is configured to overlap with a second bump 2 when viewed from above. For example, the collector of each of the plurality of amplifying transistors 111 is electrically connected to the first bump 1. For example, the collector of each of the plurality of amplifying transistors 112 is electrically connected to the second bump 2. That is, the first bump 1 functions as a lead terminal for outputting a first output signal RF11, and the second bump 2 functions as a lead terminal for outputting a second output signal RF21.

[0093] Therefore, the power amplifier module 100 can minimize the wiring length of the emitter, base, and collector of the amplifier transistors 111 and 112, thereby improving the characteristics of the module.

[0094] ===Summary===

[0095] <1> The power amplifier module 100 according to this embodiment includes: a first resistor 113; an amplifying transistor 111 (first amplifying transistor) whose emitter is input to the first signal RF10, which is a differential signal, and a second signal RF20, and outputs a first output signal RF11 from its collector, and whose base is biased through the first resistor 113; a second resistor 114; an amplifying transistor 112 (second amplifying transistor) whose emitter is input to the second signal RF20, and outputs a second output signal from its collector, and whose base is biased through the second resistor 114; and a capacitor 115, one end of which is electrically connected to the base of the amplifying transistor 111 (first amplifying transistor), and the other end of which is electrically connected to the base of the amplifying transistor 112 (second amplifying transistor), and the capacitor 115 is connected in parallel with the first resistor 113 and the second resistor 114. Thus, the power amplifier module 100 can miniaturize the capacitor 115 used for virtual grounding.

[0096] <2> In the power amplifier module 100 of this embodiment, according to <1> The described power amplifier module includes an amplifying transistor 111 (first amplifying transistor) comprising multiple transistors connected in parallel. Each transistor in the amplifying transistor 111 is configured such that its emitter receives a first signal RF10, outputs a first output signal RF11 from its collector, and its base is biased through a first resistor 113. The amplifying transistor 112 (second amplifying transistor) also comprises multiple transistors connected in parallel. Each transistor in the amplifying transistor 112 is configured such that its emitter receives a second signal RF20, outputs a second output signal RF21 from its collector, and its base is biased through a second resistor 114. Therefore, uneven operation can be suppressed in the power amplifier module 100.

[0097] <3> The power amplifier module 100 involved in this embodiment is based on <1> or <2> The described power amplifier module also includes a converter 140 (first balun), which includes a primary coil 141 into which an input signal is received; and a secondary coil 142 magnetically coupled to the primary coil 141, with its center tap electrically connected to a reference potential. The secondary coil 142 outputs a first signal RF10 to the emitter of the amplifying transistor 111 (first amplifying transistor) and a second signal RF20 to the emitter of the amplifying transistor 112 (second amplifying transistor). Therefore, the power amplifier module 100 no longer requires an LC parallel resonant circuit for the amplifying transistors 111 and 112, thus reducing the need for circuit enlargement.

[0098] <4> The power amplifier module 100a involved in this embodiment is based on <1> or <2> The described power amplifier module also includes a converter 140a, which includes a first transmission line transformer 141a and a second transmission line transformer 142a. The converter outputs a first signal RF10 to the emitter of the amplifying transistor 111 (the first amplifying transistor) and a second signal RF20 to the emitter of the amplifying transistor 112 (the second amplifying transistor). The first transmission line transformer 141a includes a first transmission line TL1, one end of which receives the input signal, and the other end is connected to the emitter of the amplifying transistor 111 (the first amplifying transistor). The power amplifier module 100a includes: an electrical connection; and a second transmission line TL2, which is magnetically coupled to the first transmission line TL1, with one end electrically connected to the emitter of the amplifying transistor 112 (the second amplifying transistor). The second transmission line transformer 142a includes: a third transmission line TL3, one end of which is electrically connected to a reference potential, and the other end of which is electrically connected to the emitter of the amplifying transistor 112 (the second amplifying transistor); and a fourth transmission line TL4, one end of which is electrically connected to the other end of the second transmission line TL2, and the other end of which is electrically connected to the emitter of the amplifying transistor 111 (the first amplifying transistor). Thus, the power amplifier module 100a can achieve circuit miniaturization, high frequency and wide bandwidth, and can perform impedance transformation.

[0099] <5> The power amplifier module 100b involved in this embodiment is based on <1> or <2> The power amplifier module described also includes a third transmission line transformer 141b and a balun 142b (second balun). The third transmission line transformer 141b includes a fifth transmission line TL5, one end of which is input to an input signal; and a sixth transmission line TL6, one end of which is electrically connected to the other end of the fifth transmission line TL5 and the other end of which is electrically connected to a reference potential. The balun 142b (second balun) includes a seventh transmission line TL7, one end of which is electrically connected to the other end of the fifth transmission line TL5 and outputs a first signal RF10 from the other end to the emitter of the amplifying transistor 111 (first amplifying transistor); and an eighth transmission line TL8, which is magnetically coupled to the seventh transmission line TL7, one end of which is electrically connected to the other end of the sixth transmission line TL6 and the reference potential, and outputs a second signal RF20 from the other end to the emitter of the amplifying transistor 112 (second amplifying transistor). Thus, the power amplifier module 100b can achieve circuit miniaturization, high frequency and wide bandwidth, and can perform impedance transformation.

[0100] <6> The power amplifier module 100c involved in this embodiment is based on <1> or <2> The described power amplifier module also includes a converter comprising: a primary coil, one end of which is input as a differential signal, namely a first input signal RFin10 and a second input signal RFin10, and the other end of which is input as a second input signal; a center tap is supplied with power; and a secondary coil, magnetically coupled to the primary coil, outputting the first signal RF10 from one end to the emitter of the amplifying transistor 111 (the first amplifying transistor), and outputting the second signal RF20 from the other end to the emitter of the amplifying transistor 112 (the second amplifying transistor); the center tap is electrically connected to a reference potential. Thus, the power amplifier module 100c can achieve circuit miniaturization, high frequency and wide bandwidth, impedance transformation, and further improve the module's gain.

[0101] <7> The power amplifier module 100d involved in this embodiment is based on <1> or <2> The described power amplifier module also includes a converter 140d, which includes a fourth transmission line transformer 141d and a fifth transmission line transformer 142d. The converter outputs a first signal RF10 to the emitter of the amplifying transistor 111 (the first amplifying transistor) and a second signal RF20 to the emitter of the amplifying transistor 112 (the second amplifying transistor). The fourth transmission line transformer 141d includes a ninth transmission line TL9, one end of which is input as the first input signal RFin10, which is a differential signal in the first input signal RFin10 and the second input signal RFin20. The other end is electrically connected to the emitter of the amplifying transistor 111 (the first amplifying transistor). The power amplifier module 100d includes: an eleventh transmission line TL11, one end of which is magnetically coupled to the ninth transmission line TL9, with one end electrically connected to the emitter of the amplifying transistor 112 (the second amplifying transistor) and the other end electrically connected to a reference potential; and a twelfth transmission line TL12, which is magnetically coupled to the eleventh transmission line TL11, with one end electrically connected to the other end of the tenth transmission line TL10 and the reference potential, and the other end electrically connected to the emitter of the amplifying transistor 111 (the first amplifying transistor). Thus, the power amplifier module 100d can achieve circuit miniaturization, high frequency and wide bandwidth, impedance transformation, and further improve the module's gain.

[0102] <8> The power amplifier module 100e involved in this embodiment is based on <1> or <2> The described power amplifier module also includes a converter 140e, which includes a sixth transmission line transformer 141e and a seventh transmission line transformer 142e. The converter outputs a first signal RF10 to the emitter of the amplifying transistor 111 (first amplifying transistor) and a second signal RF20 to the emitter of the amplifying transistor 112 (second amplifying transistor). The sixth transmission line transformer 141e includes a thirteenth transmission line TL13, one end of which is input as the first input signal RFin10, which is a differential signal, and the other end is connected to the amplifying transistor 111 (first amplifying transistor 142e). The power amplifier module 100e is electrically connected to the emitter of the second amplifying transistor 112 (the second amplifying transistor); and the fourteenth transmission line TL14, which is magnetically coupled to the thirteenth transmission line TL13, with one end electrically connected to the other end of the thirteenth transmission line TL13 and the other end electrically connected to the reference potential. The seventh transmission line transformer includes: a fifteenth transmission line TL15, one end of which is magnetically coupled to the second input signal RFin20, and the other end electrically connected to the emitter of the amplifying transistor 112 (the second amplifying transistor); and a sixteenth transmission line TL16, which is magnetically coupled to the fifteenth transmission line TL15, with one end electrically connected to the other end of the fifteenth transmission line TL15 and the other end electrically connected to the other end of the fourteenth transmission line TL14 and the reference potential. Thus, the power amplifier module 100e can achieve circuit miniaturization, high frequency and wide bandwidth, can perform impedance transformation, and can further improve the module gain.

[0103] <9> In the power amplifier module 100 of this embodiment, according to <1> to <8> The power amplifier module described in any of the above embodiments, when viewed from top (Z direction), has the following configuration for each amplifying transistor 111 (first amplifying transistor) and each amplifying transistor 112 (second amplifying transistor): the amplifying transistors 111 (first amplifying transistor) and 112 (second amplifying transistor) are symmetrically arranged with a capacitor 115 sandwiched between them, the base is disposed between the emitter and collector and the capacitor 115, a first bump 1 is disposed in a manner that overlaps with at least a portion of the emitter and collector of the amplifying transistor 111 (first amplifying transistor), and a second bump 2 is disposed in a manner that overlaps with at least a portion of the emitter and collector of the amplifying transistor 112 (second amplifying transistor). Therefore, the power amplifier module 100 can minimize the wiring lengths of the emitter, base, and collector of the amplifying transistors 111 and 112, thereby improving the characteristics of the module.

[0104] The embodiments described above are for the purpose of facilitating understanding of this disclosure and are not intended to limit its interpretation. This disclosure can be modified or improved without departing from its spirit, and it also includes equivalents. That is, any method obtained by appropriately applying design changes to the embodiments by those skilled in the art, as long as it possesses the features of this disclosure, is also included within the scope of this disclosure. The elements and their configurations in the embodiments are not limited to those illustrated and can be appropriately modified.

[0105] Explanation of reference numerals in the attached figures

[0106] 100, 100a, 100b, 100c, 100d, 100e: Power amplifier module; 110: Amplifier circuit; 111: Amplifying transistor; 112: Amplifying transistor; 113: First resistor; 114: Second resistor; 115: Capacitor; 120: Bias circuit; 130: Output circuit; 140, 140a, 140b, 140c, 140d, 140e: Converter; 141a: First transmission line transformer; 142a: Second transmission line transformer; 141b: Third transmission line transformer; 142b: Balanced-unbalanced converter; 141c: Primary coil; 142c: Secondary coil; 141d: Fourth transmission line transformer; 142d: Fifth transmission line transformer; 141e: Sixth transmission line transformer; 142e: Seventh transmission line transformer.

Claims

1. A power amplifier module, comprising: First resistor; The first amplifying transistor has its emitter input as the first signal in the first signal and the second signal of the differential signal, outputs a first output signal from its collector, and its base is biased through the first resistor. Second resistor; The second amplifying transistor has the second signal input to its emitter, outputs the second output signal from its collector, and its base is biased through the second resistor. as well as A capacitor, one end of which is electrically connected to the base of the first amplifying transistor and the other end of which is electrically connected to the base of the second amplifying transistor, is connected in parallel with the first resistor and the second resistor.

2. The power amplifier module according to claim 1, wherein, The first amplifying transistor includes multiple transistors connected in parallel. Each of the plurality of transistors in the first amplifying transistor is configured such that its emitter receives the first signal, its collector outputs the first output signal, and its base is supplied with the bias through the first resistor. The second amplifying transistor includes multiple transistors connected in parallel. Each of the plurality of transistors in the second amplifying transistor is configured such that the emitter is input to the second signal, the collector outputs the second output signal, and the base is supplied with the bias through the second resistor.

3. The power amplifier module according to claim 1 or 2, wherein, It also includes a first balun, which comprises: The primary coil, which is input with the input signal; and The secondary coil is magnetically coupled to the primary coil. The center tap of the secondary coil is electrically connected to a reference potential. The secondary coil outputs the first signal to the emitter of the first amplifying transistor and the second signal to the emitter of the second amplifying transistor.

4. The power amplifier module according to claim 1 or 2, wherein, It also includes a converter, which comprises a first transmission line transformer and a second transmission line transformer. The converter outputs the first signal to the emitter of the first amplifying transistor and the second signal to the emitter of the second amplifying transistor. The first transmission line transformer includes: A first transmission line, one end of which receives an input signal, and the other end of which is electrically connected to the emitter of the first amplifying transistor; and The second transmission line is magnetically coupled to the first transmission line, and one end is electrically connected to the emitter of the second amplifying transistor. The second transmission line transformer includes: The third transmission line has one end electrically connected to a reference potential and the other end electrically connected to the emitter of the second amplifying transistor; and The fourth transmission line has one end electrically connected to the other end of the second transmission line and the other end electrically connected to the emitter of the first amplifying transistor.

5. The power amplifier module according to claim 1 or 2, wherein, It also features a third transmission line transformer and a second balun. The third transmission line transformer includes: The fifth transmission line, one end of which is input to the input signal; and The sixth transmission line has one end electrically connected to the other end of the fifth transmission line, and the other end electrically connected to a reference potential. The second balanced-to-unbalanced converter includes: A seventh transmission line, one end of which is electrically connected to the other end of the fifth transmission line, outputs the first signal from the other end to the emitter of the first amplifying transistor; and The eighth transmission line is magnetically coupled to the seventh transmission line, with one end electrically connected to the other end of the sixth transmission line and the reference potential, and outputs the second signal from the other end to the emitter of the second amplifying transistor.

6. The power amplifier module according to claim 1 or 2, wherein, It also includes a converter, which comprises: The primary coil has one end inputting the first input signal as a first input signal and the second input signal in a differential signal, and the other end inputting the second input signal; a center tap is supplied with power. The secondary coil is magnetically coupled to the primary coil, outputting the first signal from one end to the emitter of the first amplifying transistor and the second signal from the other end to the emitter of the second amplifying transistor. The center tap is electrically connected to the reference potential.

7. The power amplifier module according to claim 1 or 2, wherein, It also includes a converter, which comprises a fourth transmission line transformer and a fifth transmission line transformer. The converter outputs the first signal to the emitter of the first amplifying transistor and the second signal to the emitter of the second amplifying transistor. The fourth transmission line transformer includes: The ninth transmission line has one end receiving the first input signal as a differential signal in a first input signal and a second input signal, and the other end electrically connected to the emitter of the first amplifying transistor; and The tenth transmission line is magnetically coupled to the ninth transmission line, with one end electrically connected to the emitter of the second amplifying transistor and the other end electrically connected to a reference potential. The fifth transmission line transformer includes: The eleventh transmission line has one end receiving the second input signal and the other end electrically connected to the emitter of the second amplifying transistor; and The twelfth transmission line is magnetically coupled to the eleventh transmission line, with one end electrically connected to the other end of the tenth transmission line and the reference potential, and the other end electrically connected to the emitter of the first amplifying transistor.

8. The power amplifier module according to claim 1 or 2, wherein, It also includes a converter, which comprises a sixth transmission line transformer and a seventh transmission line transformer. The converter outputs the first signal to the emitter of the first amplifying transistor and the second signal to the emitter of the second amplifying transistor. The sixth transmission line transformer includes: The thirteenth transmission line has one end receiving the first input signal as a differential signal in a first input signal and a second input signal, and the other end electrically connected to the emitter of the first amplifying transistor; and The fourteenth transmission line is magnetically coupled to the thirteenth transmission line, with one end electrically connected to the other end of the thirteenth transmission line and the other end electrically connected to a reference potential. The seventh transmission line transformer includes: The fifteenth transmission line has one end receiving the second input signal and the other end electrically connected to the emitter of the second amplifying transistor; and The sixteenth transmission line is magnetically coupled to the fifteenth transmission line, with one end electrically connected to the other end of the fifteenth transmission line and the other end electrically connected to the other end of the fourteenth transmission line and the reference potential.

9. The power amplifier module according to claim 1, wherein, The first amplifying transistor and the second amplifying transistor are configured as follows when viewed from above: The first amplifying transistor and the second amplifying transistor are arranged symmetrically with the capacitor sandwiched between them. The base is positioned between the emitter and collector and the capacitor. A first bump is configured to overlap at least a portion of the emitter and collector of the first amplifying transistor. The second bump is configured to overlap at least a portion of the emitter and collector of the second amplifying transistor.

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