High frequency module and communication device

Abstract

A high-frequency module and communication device are provided, which can suppress the degradation of receiving sensitivity. The high-frequency module includes: a low-noise amplifier (21 and 22); a filter (11) with the receiving band of frequency band VLB1 as the passband; a filter (13) with the receiving band of frequency band LB1 as the passband; a switching circuit having a common terminal and a selection terminal; and inductors (41-43), one end of the inductor (41) is connected to the low-noise amplifier (21) and the other end is connected to the common terminal, one end of the inductor (42) is connected to the low-noise amplifier (22) and the other end is connected to the output terminal of the filter (13), the filter (11) is connected to the selection terminal, one end of the inductor (43) is connected to the output terminal of the filter (11) and the other end is connected to ground, and the switching circuit is configured such that in the first mode where the low-noise amplifier (22) is operating and the low-noise amplifier (21) is not operating, the common terminal and the selection terminal are in a conducting state.

Description

Technical Field

[0001] This invention relates to a high-frequency module and a communication device. Background Technology

[0002] Patent Document 1 (Figure 14) discloses a high-frequency module comprising: a low-noise amplifier; first to third receiving filters; a switch connected between the low-noise amplifier and the first to third receiving filters; a first inductor for impedance matching connected between the first receiving filter and the switch; and a second inductor for impedance matching connected between the second receiving filter and the switch.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: International Publication No. 2018 / 123913 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] However, in the high-frequency module of Patent Document 1, when the spacing between the first inductor and the second inductor cannot be ensured due to miniaturization requirements, the following problem occurs: the mutual interference between the first inductor and the second inductor becomes stronger, and the receiving sensitivity deteriorates.

[0008] Therefore, the present invention provides a high-frequency module and communication device capable of suppressing the degradation of receiving sensitivity.

[0009] Solution for solving the problem

[0010] One aspect of the present invention relates to a high-frequency module comprising: a first low-noise amplifier and a second low-noise amplifier; a first filter having a passband including a receiving frequency band of a first frequency band; a second filter having a passband including a receiving frequency band of a second frequency band; a first switching circuit having a first terminal and a second terminal; and a first inductor, a second inductor, and a third inductor, wherein one end of the first inductor is connected to the input terminal of the first low-noise amplifier, and the other end of the first inductor is connected to the first terminal; one end of the second inductor is connected to the input terminal of the second low-noise amplifier, and the other end of the second inductor is connected to the output terminal of the second filter; the output terminal of the first filter is connected to the second terminal; one end of the third inductor is connected to the output terminal of the first filter, and the other end of the third inductor is connected to ground; the first switching circuit is configured such that, in a first mode in which the second low-noise amplifier operates and the first low-noise amplifier does not operate, the first terminal and the second terminal are in a conducting state.

[0011] Additionally, one embodiment of the present invention includes a high-frequency module comprising: a first low-noise amplifier and a second low-noise amplifier; a first filter having a passband including a receiving band of a first frequency band; a second filter having a passband including a receiving band of a second frequency band; a third filter having a passband including a receiving band of a third frequency band; a first switching circuit having a first terminal, a second terminal, and a third terminal; a first inductor, a second inductor, and a third inductor; and a first switching element, wherein one end of the first inductor is connected to the input terminal of the first low-noise amplifier, and the other end of the first inductor is connected to the first terminal; one end of the second inductor is connected to the input terminal of the second low-noise amplifier, and the other end of the second inductor is connected to the output terminal of the second filter; the output terminal of the first filter is connected to the second terminal; the output terminal of the third filter is connected to the third terminal; one end of the first switching element is connected to the first terminal; the other end of the first switching element is connected to one end of the third inductor; and the other end of the third inductor is connected to ground.

[0012] The effects of the invention

[0013] According to the present invention, a high-frequency module and communication device capable of suppressing the degradation of receiving sensitivity can be provided. Attached Figure Description

[0014] Figure 1 This is a circuit diagram of the communication device involved in the implementation method.

[0015] Figure 2 This is a diagram illustrating a first mode of the high-frequency module involved in the implementation method.

[0016] Figure 3 This is a graph showing the change in the Q value of the second inductor caused by the opening and closing of the first switching circuit.

[0017] Figure 4 This is a diagram illustrating a second mode of the high-frequency module involved in the implementation method.

[0018] Figure 5 This is a circuit diagram of a communication device according to a variation of the implementation method.

[0019] Figure 6 This is a diagram illustrating a first mode of the high-frequency module involved in a variation of the implementation method.

[0020] Figure 7 This is a diagram illustrating a second mode of the high-frequency module involved in a variation of the implementation method.

[0021] Figure 8 This is a top view showing the component configuration of the high-frequency module involved in the embodiment. Detailed Implementation

[0022] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Furthermore, the embodiments described below are general or specific examples. The numerical values, shapes, materials, structural elements, arrangements of structural elements, and connection methods shown in the following embodiments are examples and are not intended to limit the present invention.

[0023] Furthermore, the figures are schematic diagrams that have been appropriately emphasized, omitted, or proportionally adjusted for the purpose of illustrating the invention, and are not necessarily strictly illustrative, sometimes differing from the actual shapes, positional relationships, and proportions. In the figures, substantially identical structures are labeled with the same reference numerals, and sometimes repeated descriptions are omitted or simplified.

[0024] In the figures below, the x-axis and y-axis are mutually orthogonal axes on a plane parallel to the main surface of the mounting substrate. The z-axis is perpendicular to the main surface of the mounting substrate, with its positive direction representing the upward direction and its negative direction representing the downward direction.

[0025] In the following description, "connection" includes not only direct connections via connection terminals and / or wiring conductors, but also electrical connections via other circuit elements. "C connected between A and B" and "C connected between A and B" mean that one end of C is connected to A and the other end of C is connected to B, indicating that C is connected in series in the path connecting A and B. "The path connecting A and B" refers to the path formed by conductors electrically connecting A to B.

[0026] The "passband of a filter" is the portion of the spectrum transmitted through the filter, defined as the frequency band between two frequencies that are 3 dB greater than the minimum power insertion loss.

[0027] "Transmit band" refers to the frequency band used for transmitting in a communication device, while "receive band" refers to the frequency band used for receiving in a communication device. For example, in the FDD (Frequency Division Duplex) band, different frequency bands (uplink band and downlink band) are used as the transmit and receive bands. Conversely, in the TDD band, for example, the transmit and receive bands use the same frequency band.

[0028] A "terminal" refers to the point where a conductor within an element ends. Furthermore, when the impedance between conductors between elements is sufficiently low, a terminal is interpreted as any point on the conductor between elements or the entire conductor, rather than just a single point.

[0029] "Component disposed on substrate" includes components disposed on the main surface of substrate and components disposed within substrate. "Component disposed on the main surface of substrate" includes components disposed in contact with the main surface of substrate, as well as components disposed on top of the main surface in a manner that does not contact the main surface (e.g., components stacked on top of other components disposed in contact with the main surface).

[0030] Furthermore, in the component configuration disclosed herein, "wound shafts in the same direction" not only means that the angle formed by the two wound shafts is 0°, but also includes the range in which the directions of the wound shafts are substantially the same, for example, that the angle (the smaller angle) formed by the two wound shafts is within 30°.

[0031] (Implementation Method)

[0032] [1. Structure of Communication Device 4]

[0033] First, refer to Figure 1 The structure of the communication device 4 involved in the implementation method will be explained. Figure 1 This is a circuit diagram of the communication device 4 involved in the implementation method.

[0034] also, Figure 1 The description of the communication device 4 is illustrative; it can be installed using a variety of circuit mounting methods and circuit techniques. Therefore, the following description of the communication device 4 should not be interpreted restrictively.

[0035] Communication device 4 can be used to provide wireless connectivity. For example, communication device 4 can be installed in the UE (User Equipment) of a cellular network (also called a mobile network) in portable phones, smartphones, tablet computers, wearable devices, etc. In another example, by installing communication device 4, wireless connectivity can be provided to IoT (Internet of Things) sensor devices, medical / healthcare devices, automobiles, unmanned aerial vehicles (UAVs), and automated guided vehicles (AGVs). In yet another example, by installing communication device 4, wireless connectivity can also be provided using wireless access points or wireless hotspots.

[0036] The communication device 4 includes a high-frequency module 1, an antenna 2, and an RFIC (Radio Frequency Integrated Circuit) 3.

[0037] High-frequency module 1 is capable of transmitting high-frequency signals between antenna 2 and RFIC 3. The detailed circuit structure of high-frequency module 1 will be described later.

[0038] Antenna 2 is connected to high-frequency module 1 and can receive high-frequency signals from outside the communication device 4 and supply them to high-frequency module 1. Alternatively, antenna 2 may be partially or entirely excluded from the communication device 4. Furthermore, the communication device 4 may also have one or more antennas in addition to antenna 2.

[0039] RFIC 3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC 3 can process the high-frequency received signal input from high-frequency module 1 through down-conversion or the like, and output the resulting received signal to BBIC (Baseband Integrated Circuit, not shown). Furthermore, RFIC 3 may also have a control unit that controls the switches and amplifiers in high-frequency module 1. Moreover, some or all of the functions of the control unit in RFIC 3 may be external to RFIC 3, for example, they may be included in BBIC or high-frequency module 1.

[0040] [2. Circuit structure of high-frequency module 1]

[0041] like Figure 1 As shown, the high-frequency module 1 includes low-noise amplifiers 21 and 22, filters 11, 12, 13 and 14, switching circuits 30, 31 and 32, switching elements 33 and 34, inductors 41, 42 and 43, antenna connection terminal 100, and high-frequency output terminals 110 and 120.

[0042] Antenna connection terminal 100 is an external connection terminal of high-frequency module 1, used to receive high-frequency signals from antenna 2. Antenna connection terminal 100 is connected to antenna 2 externally to high-frequency module 1 and to switching circuit 30 internally to high-frequency module 1.

[0043] High-frequency output terminals 110 and 120 are external connection terminals of the high-frequency module 1, used to supply high-frequency signals to the RFIC 3. High-frequency output terminals 110 and 120 are connected to the RFIC 3 externally and to the low-noise amplifiers 21 and 22 internally, respectively.

[0044] The low-noise amplifier 21 is an example of a first low-noise amplifier, capable of amplifying signals in the ultra-low frequency band (600MHz-850MHz). The input of the low-noise amplifier 21 is connected to one end of the inductor 41, and the output of the low-noise amplifier 21 is connected to the high-frequency output terminal 110.

[0045] Low-noise amplifier 22 is an example of a second low-noise amplifier, capable of amplifying signals in the low-frequency band (850MHz-1GHz), for example. The input of low-noise amplifier 22 is connected to one end of inductor 42, and the output of low-noise amplifier 22 is connected to high-frequency output terminal 120.

[0046] Filter 11 is an example of a first filter, such as a bandpass filter having a passband that includes the receiving band (VLB1-Rx) of frequency band VLB1 belonging to the ultra-low frequency band group. Filter 11 allows signals within the receiving band of frequency band VLB1 to pass through and attenuates signals outside the receiving band of frequency band VLB1. The input terminal of filter 11 is connected to the selection terminal 30b of switching circuit 30, and the output terminal of filter 11 is connected to the selection terminal 31b of switching circuit 31. Filter 11 includes an elastic wave resonator. The elastic wave resonator included in filter 11 may be, for example, a surface acoustic wave (SAW) resonator or a bulk acoustic wave (BAW) resonator. Furthermore, SAW includes not only surface waves but also interface waves.

[0047] Filter 12 is an example of a third filter, such as a bandpass filter having a passband that includes the receiving band (VLB2-Rx) of frequency band VLB2 belonging to the ultra-low frequency band group. Filter 12 allows signals within the receiving band of frequency band VLB2 to pass through and attenuates signals outside the receiving band of frequency band VLB2. The input of filter 12 is connected to the selection terminal 30c of switch circuit 30, and the output of filter 12 is connected to the selection terminal 31c of switch circuit 31.

[0048] Filter 13 is an example of a second filter, such as a bandpass filter having a passband that includes the receiving band (LB1-Rx) of frequency band LB1 belonging to the low-frequency band group. Filter 13 allows signals within the receiving band of frequency band LB1 to pass through and attenuates signals outside the receiving band of frequency band LB1. The input of filter 13 is connected to the selection terminal 30d of switch circuit 30, and the output of filter 13 is connected to the selection terminal 32b of switch circuit 32.

[0049] Filter 14 is an example of a fourth filter, such as a bandpass filter having a passband that includes the receiving band (LB2-Rx) of frequency band LB2 belonging to the low-frequency band group. Filter 14 allows signals within the receiving band of frequency band LB2 to pass through and attenuates signals outside the receiving band of frequency band LB2. The input of filter 14 is connected to the selection terminal 30e of switch circuit 30, and the output of filter 14 is connected to the selection terminal 32c of switch circuit 32.

[0050] Frequency bands VLB1 and VLB2 are located on the lower frequency side compared to frequency bands LB1 and LB2.

[0051] In addition, filters 12 to 14 can also be SAW filters with SAW resonators or BAW filters with BAW resonators, or they can be LC filters or dielectric filters, etc. The filter construction is arbitrary.

[0052] Furthermore, filters 11-14 are not limited to bandpass filters. Some or all of filters 11-14 may also be band-stop filters, high-pass filters, low-pass filters, or any combination thereof.

[0053] Switching circuit 31 is an example of the first switching circuit. It is an SPDT (Single-Pole Double-Throw) type switching circuit with a common terminal 31a (first terminal), a selection terminal 31b (second terminal), and a selection terminal 31c (third terminal). Switching circuit 31 is disposed between inductor 41 and filters 11 and 12, switching the connection and disconnection of inductor 41 and filter 11, and also switching the connection and disconnection of inductor 41 and filter 12.

[0054] Specifically, the switching circuit 31 includes SPST (Single-Pole Single-Throw) type switching elements 311, 312, 313, and 314. Switching element 311 is a serial switch connected between the common terminal 31a and the selection terminal 31b, and switching element 312 is a parallel switch connected between the selection terminal 31b and ground. Additionally, switching element 313 is a serial switch connected between the common terminal 31a and the selection terminal 31c, and switching element 314 is a parallel switch connected between the selection terminal 31c and ground. The on / off states of switching elements 311 and 312 are switched exclusively. This improves the isolation between the common terminal 31a and the selection terminal 31b and ground. Furthermore, switching elements 312 and 314 may be omitted.

[0055] Switching circuit 32 is an example of a third switching circuit. It is an SPDT-type switching circuit with a common terminal 32a (second common terminal), a selection terminal 32b (third selection terminal), and a selection terminal 32c (fourth selection terminal). Switching circuit 32 is disposed between inductor 42 and filters 13 and 14, switching the connection and disconnection of inductor 42 and filter 13, and also switching the connection and disconnection of inductor 42 and filter 14.

[0056] Specifically, the switching circuit 32 includes SPST-type switching elements 321, 322, 323, and 324. Switching element 321 is a serial switch connected between the common terminal 32a and the selection terminal 32b, and switching element 322 is a parallel switch connected between the selection terminal 32b and ground. Additionally, switching element 323 is a serial switch connected between the common terminal 32a and the selection terminal 32c, and switching element 324 is a parallel switch connected between the selection terminal 32c and ground. The on / off states of switching elements 321 and 322 are switched exclusively. This improves the isolation between the common terminal 32a and the selection terminal 32b and ground. Furthermore, switching elements 322 and 324 may also be omitted.

[0057] The switching circuit 30 is an example of a second switching circuit. It is an SP4T (Single-Pole 4-Throw) type switching circuit having a common terminal 30a (first common terminal), a selection terminal 30b (first selection terminal), a selection terminal 30c, a selection terminal 30d (second selection terminal), and a selection terminal 30e. The switching circuit 30 is disposed between the antenna connection terminal 100 and the filters 11-14, switching between the connection and non-connection of the antenna connection terminal 100 and the filter 11, as well as between the antenna connection terminal 100 and the filter 12, the antenna connection terminal 100 and the filter 13, and the antenna connection terminal 100 and the filter 14.

[0058] Switching element 33 is an example of a second switching element, connected between the input terminal of low-noise amplifier 21 and ground. Switching element 33 becomes conductive when low-noise amplifier 21 is in a non-operating state.

[0059] Switching element 34 is connected between the input terminal of low-noise amplifier 22 and ground. Switching element 34 is turned on when low-noise amplifier 22 is in the non-operating state.

[0060] Inductor 41 is an example of a first inductor. One end of inductor 41 is connected to the input terminal of low-noise amplifier 21, and the other end of inductor 41 is connected to common terminal 31a. Inductor 41 is a component used to achieve impedance matching between filters 11 and 12 and low-noise amplifier 21.

[0061] Inductor 42 is an example of a second inductor. One end of inductor 42 is connected to the input terminal of low-noise amplifier 22, and the other end of inductor 42 is connected to common terminal 32a. Inductor 42 is connected to the output terminals of filter 13 and filter 14 via switching circuit 32. Inductor 42 is a component used to achieve impedance matching between filters 13 and 14 and low-noise amplifier 22.

[0062] Inductor 43 is an example of a third inductor. One end of inductor 43 is connected to the output of filter 11, and the other end of inductor 43 is connected to ground. Inductor 43 is a component used to achieve impedance matching between filter 11 and low-noise amplifier 21, and to widen the passband of filter 11.

[0063] In addition, at least one of filters 12 and 14, switching circuits 30 and 32, and switching elements 33 and 34 may not be included in the high-frequency module 1.

[0064] [3. Frequency band applied to high-frequency module 1]

[0065] This section describes the frequency bands VLB1, VLB2, LB1, and LB2 supported by high-frequency module 1.

[0066] Frequency bands VLB1, VLB2, LB1, and LB2 are frequency bands used in communication systems built using Radio Access Technology (RAT). Frequency bands VLB1, VLB2, LB1, and LB2 are predefined by standardization organizations such as 3GPP (a registered trademark) and IEEE. Examples of communication systems include 5G NR (5th Generation New Radio), 4G LTE (4th Generation Long Term Evolution), 2G GSM (2nd Generation Global System for Mobile communications), and WLAN (Wireless Local Area Network) systems.

[0067] Frequency band VLB1 is an example of a first frequency band, which can be an FDD (Frequency Division Duplex) band, a TDD (Time Division Duplex) band, or a SUL (Supplementary Uplink) band. Frequency band VLB2 is an example of a third frequency band, which can be an FDD band, a TDD band, or a SUL band. As frequency bands VLB1 and VLB2, Band29, Band20, Band28, Band12, Band13, or Band14 for LTE, or n29, n20, n28, n12, n13, n14, or n105 for 5G NR can be used. However, frequency bands VLB1 and VLB2 are not limited to these frequency bands.

[0068] Frequency band LB1 is an example of a second frequency band, which can be an FDD, TDD, or SUL band. Frequency band LB2 is an example of a fourth frequency band, which can be an FDD, TDD, or SUL band. Frequency bands LB1 and LB2 can use Band 8 or Band 26 for LTE, or n8 or n26 for 5G NR. Furthermore, frequency bands LB1 and LB2 are not limited to these specific frequency bands.

[0069] In addition, frequency bands VLB1 and LB1 are combinations of frequency bands that communicate at different times.

[0070] [4. Communication Mode of High-Frequency Module 1]

[0071] Next, the communication mode of high-frequency module 1 will be explained.

[0072] [4.1. First Mode]

[0073] Reference Figure 2 To illustrate the first mode of high-frequency module 1. Figure 2 This is a diagram illustrating a first mode of the high-frequency module 1 according to the implementation method. Furthermore, in Figure 2 In the diagram, the dashed arrows indicate the signal path.

[0074] The first mode is a communication mode that receives signals from frequency band LB1 but does not receive signals from frequency band LB2, nor signals from frequency band VLB1 or frequency band VLB2. Alternatively, frequency band LB2 can also be received in the first mode. In other words, the first mode is a communication mode in which low-noise amplifier 22 operates while low-noise amplifier 21 does not operate.

[0075] In high-frequency module 1, in the first mode, common terminal 32a and selection terminal 32b are in a conducting state (switching element 321 is in a conducting state), common terminal 32a and selection terminal 32c are in a non-conducting state (switching element 323 is in a non-conducting state), common terminal 30a and selection terminal 30d are in a conducting state, common terminal 30a and selection terminal 30e are in a non-conducting state, and switching element 34 is in a non-conducting state. Additionally, in the first mode, switching element 322 is in a non-conducting state, and switching element 324 is in a conducting state.

[0076] In the first mode, common terminal 31a and select terminal 31b are in a conducting state (switching element 311 is in a conducting state), common terminal 31a and select terminal 31c are in a non-conducting state (switching element 313 is in a non-conducting state), common terminal 30a and select terminal 30b are in a non-conducting state, common terminal 30a and select terminal 30c are in a non-conducting state, and switching element 33 is in a conducting state. Additionally, in the first mode, switching element 312 is in a non-conducting state, and switching element 314 is in a conducting state.

[0077] Alternatively, in the first mode, instead of switching element 33 being turned on, the bias current (voltage) supplied to low noise amplifier 21 can be stopped, and / or the power supply voltage supplied to low noise amplifier 21 can be stopped.

[0078] Thus, the received signal of band LB1 is transmitted from antenna 2 to RFIC 3 via antenna connection terminal 100, switching circuit 30, filter 13, switching circuit 32, inductor 42, low noise amplifier 22 and high frequency output terminal 120.

[0079] At this point, the smaller the high-frequency module 1 is, the closer the inductors 41 and 42 are configured, leading to mutual interference and the generation of parasitic capacitance between them. Consequently, the series connection circuit of the parasitic capacitance and inductor 41 is connected between the signal path of frequency band LB1, which connects filter 13, switching circuit 32, inductor 42, and low-noise amplifier 22, and ground. This series connection circuit functions as a notch filter circuit with a resonant point in the specified frequency band. When the specified frequency band is near frequency band LB1, the Q value of inductor 42 in the frequency band containing frequency band LB1 deteriorates, resulting in the following problems: the signal quality of the received signal through the signal path of frequency band LB1 decreases, and the receiving sensitivity of the signal in frequency band LB1 in the high-frequency module 1 deteriorates.

[0080] In contrast, in the high-frequency module 1 of this embodiment, in the first mode, although the signal of frequency band VLB1 does not flow through the signal path of frequency band VLB1 that connects filter 11, switching circuit 31, inductor 41 and low-noise amplifier 21, the switching element 311 is turned on. Therefore, the other end of inductor 41 is connected to ground via inductor 43. Thus, the parasitic capacitance is connected to inductor 41 via ground, and therefore the series connection circuit (notch filter circuit) described above is not generated, and the Q value degradation of inductor 42 can be suppressed.

[0081] Figure 3 This is a graph showing the change in the Q value of inductor 42 caused by the opening and closing of switch circuit 31. As shown in the graph, when switch element 311 is in the non-conducting state, the minimum Q value of inductor 42 is contained in the low-frequency band group, and the Q value of inductor 42 in band LB1 is relatively small. Conversely, when switch element 311 is in the conducting state, the minimum Q value of inductor 42 is not contained in the low-frequency band group, and the Q value of inductor 42 in band LB1 is relatively large. Therefore, when switch element 311 is in the conducting state, the Q value degradation of inductor 42 is suppressed, thus suppressing the degradation of the signal quality of the received signal through the signal path of band LB1, and suppressing the degradation of the receiving sensitivity of the signal in band LB1 in high-frequency module 1.

[0082] In addition, the inductor 43 connected between the output terminal of the filter 11 and ground, through connection with the inductor 41, can suppress the generation of the notch circuit and extend the passband of the filter 11 containing the elastic wave resonator, thereby reducing the signal transmission loss of the frequency band VLB1.

[0083] Furthermore, by connecting the inductor 43 to ground, the filter 11 can be protected from electrostatic discharge (ESD).

[0084] Alternatively, an inductor can be connected between the output of filter 12 and ground. Accordingly, in the first mode, instead of turning on switch element 311, switch element 313 can be turned on. Furthermore, in the first mode, instead of turning on switch element 311, both switch elements 311 and 313 can be turned on. Accordingly, the parasitic capacitance is connected to inductor 41 via ground, thus avoiding the notch filter circuit described above and suppressing Q-value degradation of inductor 42.

[0085] [4.2. Second Mode]

[0086] Reference Figure 4 To illustrate the second mode of high-frequency module 1. Figure 4This is a diagram illustrating a second mode of the high-frequency module 1 according to the embodiment. Furthermore, in Figure 4 In the diagram, the dashed arrows indicate the signal path.

[0087] The second mode is a communication mode that receives signals from frequency band VLB1 but does not receive signals from frequency band VLB2, nor signals from frequency bands LB1 and LB2. Alternatively, frequency band VLB2 can also be received in the second mode. In other words, the second mode is a communication mode in which low-noise amplifier 21 operates while low-noise amplifier 22 does not operate.

[0088] In high-frequency module 1, in the second mode, common terminal 31a and selection terminal 31b are in a conducting state (switching element 311 is in a conducting state), common terminal 31a and selection terminal 31c are in a non-conducting state (switching element 313 is in a non-conducting state), common terminal 30a and selection terminal 30b are in a conducting state, common terminal 30a and selection terminal 30c are in a non-conducting state, and switching element 33 is in a non-conducting state. Additionally, in the second mode, switching element 312 is in a non-conducting state, and switching element 314 is in a conducting state.

[0089] In the second mode, common terminal 32a and select terminal 32b are in a non-conductive state (switching element 321 is in a non-conductive state), common terminal 32a and select terminal 32c are in a non-conductive state (switching element 323 is in a non-conductive state), common terminal 30a and select terminal 30d are in a non-conductive state, common terminal 30a and select terminal 30e are in a non-conductive state, and switching element 34 is in a conductive state. Additionally, in the second mode, switching element 322 and switching element 324 are in a conductive state.

[0090] Alternatively, in the second mode, instead of switching element 34 being turned on, the bias current (voltage) supplied to low noise amplifier 22 is stopped, and / or the power supply voltage supplied to low noise amplifier 22 is stopped.

[0091] Thus, the received signal of band VLB1 is transmitted from antenna 2 to RFIC 3 via antenna connection terminal 100, switching circuit 30, filter 11, switching circuit 31, inductor 41, low noise amplifier 21 and high frequency output terminal 110.

[0092] In this case, in the first mode, the inductor 43 connected between the output terminal of the filter 11 and ground, by being connected to the inductor 41, can suppress the generation of the aforementioned notch filter circuit, and in the second mode, it can extend the passband of the filter 11 containing the elastic wave resonator. Therefore, the signal transmission loss of frequency band VLB1 in the second mode can be reduced.

[0093] Furthermore, by connecting the inductor 43 to ground, the filter 11 can be protected from electrostatic discharge (ESD).

[0094] Alternatively, an inductor may be connected between at least one of the output terminals of filter 13 and ground, and between the output terminals of filter 14 and ground. In this case, in the second mode, although the signal of frequency band LB1 does not flow through the signal path of frequency band LB1, the switching element 321 or 323 is turned on. Thus, the other end of inductor 42 is connected to ground. Consequently, the parasitic capacitance connected to inductor 41 is connected to inductor 42 via ground, thereby suppressing the degradation of the Q value in the VLB1 frequency band of inductor 41.

[0095] Furthermore, regarding the inductor connected between the output terminal of any of filters 11 to 14 and ground, it is more ideal to connect it between the output terminal of filter 11 or 12 and ground than to connect it between the output terminal of filter 13 or 14 and ground.

[0096] The minimum Q value of the inductor, caused by the notch filter circuit connected to the signal path, is more likely to occur at higher frequencies. Therefore, compared to transmitting signals in the ultra-low frequency band, the effect of suppressing the Q value degradation caused by the notch filter circuit is greater when transmitting signals in the low frequency band.

[0097] [5. Structure of the communication device 6 involved in the modified example]

[0098] Reference Figure 5 The structure of the communication device 6 involved in the modified embodiment will be explained. Figure 5 This is a circuit diagram of the communication device 6 involved in a variation of the implementation method.

[0099] also, Figure 5 The description of the communication device 6 is illustrative; it can be installed using a wide variety of circuit mountings and circuit techniques. Therefore, the following description of the communication device 6 should not be interpreted restrictively.

[0100] The communication device 6 includes a high-frequency module 5, an antenna 2, and an RFIC 3. The communication device 6 according to this modification differs from the communication device 4 according to the embodiment only in that it includes a high-frequency module 5 instead of the high-frequency module 1. Therefore, in the following description of the communication device 6 according to this modification, the description of the structure identical to that of the communication device 4 will be omitted, and the high-frequency module 5, which differs from that of the communication device 4, will be described.

[0101] The high-frequency module 5 is capable of transmitting high-frequency signals between the antenna 2 and the RFIC 3.

[0102] [6. Circuit structure of high-frequency module 5]

[0103] like Figure 5 As shown, the high-frequency module 5 includes low-noise amplifiers 21 and 22, filters 11, 12, 13 and 14, switching circuits 30, 35 and 32, switching elements 33 and 34, inductors 41, 42 and 44, antenna connection terminal 100, and high-frequency output terminals 110 and 120. The high-frequency module 5 according to this modification differs from the high-frequency module 1 according to the embodiment in that it includes switching circuit 35 and inductor 44 instead of switching circuit 31 and inductor 43. Therefore, the following description of the high-frequency module 5 according to this modification will omit the description of its structure identical to that of the high-frequency module 1, and will focus on the aspects that differ from the high-frequency module 1.

[0104] Filter 11 is an example of a first filter, such as a bandpass filter having a passband that includes the receiving band (VLB1-Rx) of the frequency band VLB1 belonging to the ultra-low frequency band group. The input of filter 11 is connected to the selection terminal 30b of the switching circuit 30, and the output of filter 11 is connected to the selection terminal 31b of the switching circuit 35.

[0105] Filter 12 is an example of a third filter, such as a bandpass filter having a passband that includes the receiving band (VLB2-Rx) of the frequency band VLB2 belonging to the ultra-low frequency band group. The input of filter 12 is connected to the selection terminal 30c of the switching circuit 30, and the output of filter 12 is connected to the selection terminal 31c of the switching circuit 35.

[0106] Filter 13 is an example of a second filter, such as a bandpass filter having a passband that includes the receiving band (LB1-Rx) of the frequency band LB1 belonging to the low-frequency band group. The input of filter 13 is connected to the selection terminal 30d of switch circuit 30, and the output of filter 13 is connected to the selection terminal 32b of switch circuit 32.

[0107] Filter 14 is an example of a fourth filter, such as a bandpass filter having a passband that includes the receiving band (LB2-Rx) of the frequency band LB2 belonging to the low-frequency band group. The input of filter 14 is connected to the selection terminal 30e of switch circuit 30, and the output of filter 14 is connected to the selection terminal 32c of switch circuit 32.

[0108] Switching circuit 35 is an example of the first switching circuit. It is an SP3T (Single-Pole 3-Throw) type switching circuit with a common terminal 31a (first terminal), a selection terminal 31b (second terminal), a selection terminal 31c (third terminal), and a selection terminal 31d (fourth terminal). Switching circuit 35 is disposed between inductor 41 and filters 11, 12, and inductor 44, switching the connection and disconnection of inductor 41 and filter 11, as well as the connection and disconnection of inductor 41 and filter 12, and the connection and disconnection of inductor 41 and inductor 44.

[0109] Specifically, the switching circuit 35 includes SPST-type switching elements 311, 312, 313, 314, and 315. Switching element 311 is a serial switch connected between the common terminal 31a and the selection terminal 31b, and switching element 312 is a parallel switch connected between the selection terminal 31b and ground. Switching element 313 is a serial switch connected between the common terminal 31a and the selection terminal 31c, and switching element 314 is a parallel switch connected between the selection terminal 31c and ground. Switching element 315, an example of a first switching element, is a serial switch connected between the common terminal 31a and the selection terminal 31d. One end of switching element 315 is connected to the common terminal 31a, and the other end is connected to one end of the inductor 44. The conduction and deconduction of switching elements 311 and 312 are switched exclusively. Therefore, the isolation between the common terminal 31a and the selection terminal 31b and ground is improved. The switching elements 313 and 314 are switched on and off exclusively. This improves the isolation between the common terminal 31a and the select terminal 31c and ground. Furthermore, switching elements 312 and 314 may also be absent.

[0110] Inductor 44 is an example of a third inductor. One end of inductor 44 is connected to the other end of switching element 315, and the other end of inductor 44 is connected to ground. Inductor 44 is a component used to achieve impedance matching between filters 11 and 12 and low-noise amplifier 21, and to widen the passband width of filters 11 and 12.

[0111] Furthermore, the filter, the switch circuit 30, and the antenna connection terminal 100 are not connected to the selection terminal 31d of the switch circuit 35.

[0112] Alternatively, at least one of the filter 14, switching circuits 30 and 32, and switching elements 33 and 34 may not be included in the high-frequency module 5.

[0113] Alternatively, the switching element 315 may not be included in the switching circuit 35. In this case, one end of the switching element 315 is connected to a node on the path that connects the other end of the inductor 41 to the common terminal 31a, and the other end of the switching element 315 is connected to one end of the inductor 44, the other end of the inductor 44 being connected to ground.

[0114] [7. Communication Mode of High-Frequency Module 5]

[0115] Next, the communication mode of high-frequency module 5 will be explained.

[0116] [7.1. First Mode]

[0117] Reference Figure 6 To illustrate the first mode of high-frequency module 5. Figure 6 This is a diagram illustrating a first mode of the high-frequency module 5 involved in a modified embodiment. Furthermore, in Figure 6 In the diagram, the dashed arrows indicate the signal path.

[0118] The first mode is a communication mode that receives signals from frequency band LB1 but does not receive signals from frequency band LB2, nor signals from frequency band VLB1 or frequency band VLB2. Alternatively, frequency band LB2 can also be received in the first mode. In other words, the first mode is a communication mode in which low-noise amplifier 22 operates while low-noise amplifier 21 does not operate.

[0119] In the high-frequency module 5, in the first mode, the common terminal 32a and the selection terminal 32b are in a conducting state (the switching element 321 is in a conducting state), the common terminal 32a and the selection terminal 32c are in a non-conducting state (the switching element 323 is in a non-conducting state), the common terminal 30a and the selection terminal 30d are in a conducting state, the common terminal 30a and the selection terminal 30e are in a non-conducting state, and the switching element 34 is in a non-conducting state. Additionally, in the first mode, the switching element 322 is in a non-conducting state, and the switching element 324 is in a conducting state.

[0120] In the first mode, switch element 315 is in the ON state, common terminal 31a and select terminal 31b are in the OFF state (switch element 311 is in the OFF state), common terminal 31a and select terminal 31c are in the OFF state (switch element 313 is in the OFF state), common terminal 30a and select terminal 30b are in the OFF state, common terminal 30a and select terminal 30c are in the OFF state, and switch element 33 is in the ON state. Additionally, in the first mode, switch element 312 and switch element 314 are in the ON state.

[0121] Alternatively, in the first mode, instead of switching element 33 being turned on, the bias current (voltage) supplied to low noise amplifier 21 can be stopped, and / or the power supply voltage supplied to low noise amplifier 21 can be stopped.

[0122] Thus, the received signal of band LB1 is transmitted from antenna 2 to RFIC 3 via antenna connection terminal 100, switching circuit 30, filter 13, switching circuit 32, inductor 42, low noise amplifier 22 and high frequency output terminal 120.

[0123] At this point, the smaller the high-frequency module 5, the closer the inductors 41 and 42 are configured, leading to mutual interference and the generation of parasitic capacitance between them. Consequently, the series connection circuit of the parasitic capacitance and inductor 41 is connected between the signal path of frequency band LB1, which connects filter 13, switching circuit 32, inductor 42, and low-noise amplifier 22, and ground. This series connection circuit functions as a notch filter circuit with a resonant point in the specified frequency band. When the specified frequency band is near frequency band LB1, the Q value of inductor 42 in the frequency band containing frequency band LB1 deteriorates, resulting in the following problems: the signal quality of the received signal through the signal path of frequency band LB1 decreases, and the receiving sensitivity of the signal in frequency band LB1 in the high-frequency module 5 deteriorates.

[0124] In contrast, in the high-frequency module 5 of this variant, in the first mode, although the signal of frequency band VLB1 does not flow through the signal path of frequency band VLB1 connecting filter 11, switching circuit 35, inductor 41, and low-noise amplifier 21, the switching element 315 is turned on. Therefore, the other end of inductor 41 is connected to ground via inductor 44. Thus, the parasitic capacitance is connected to inductor 41 via ground, and therefore the notch filter circuit described above is not generated, suppressing the Q-value degradation of inductor 42. Therefore, the degradation of the received signal quality through the signal path of frequency band LB1 can be suppressed, and the degradation of the receiving sensitivity of the signal of frequency band LB1 in the high-frequency module 5 can be suppressed.

[0125] In addition, the inductor 44 connected between the common terminal 31a and ground, by being connected to the inductor 41, can suppress the generation of the notch circuit mentioned above, and can extend the passband of the filters 11 and 12 containing the elastic wave resonator, thereby reducing the signal transmission loss of frequency bands VLB1 and VLB2.

[0126] [7.2. Second Mode]

[0127] Reference Figure 7 To illustrate the second mode of high-frequency module 5. Figure 7This is a diagram illustrating a second mode of the high-frequency module 5 involved in a modified embodiment. Furthermore, in Figure 7 In the diagram, the dashed arrows indicate the signal path.

[0128] The second mode is a communication mode that receives signals from frequency band VLB1 but does not receive signals from frequency band VLB2, nor signals from frequency bands LB1 and LB2. Alternatively, frequency band VLB2 can also be received in the second mode. In other words, the second mode is a communication mode in which low-noise amplifier 21 operates while low-noise amplifier 22 does not operate.

[0129] In the high-frequency module 5, in the second mode, the common terminal 31a and the selection terminal 31b are in a conducting state (switching element 311 is in a conducting state), the common terminal 31a and the selection terminal 31d are in a conducting state (switching element 315 is in a conducting state), the common terminal 31a and the selection terminal 31c are in a non-conducting state (switching element 313 is in a non-conducting state), the common terminal 30a and the selection terminal 30b are in a conducting state, the common terminal 30a and the selection terminal 30c are in a non-conducting state, and the switching element 33 is in a non-conducting state. Additionally, in the second mode, the switching element 312 is in a non-conducting state, and the switching element 314 is in a conducting state.

[0130] In the second mode, common terminal 32a and select terminal 32b are in a non-conductive state (switching element 321 is in a non-conductive state), common terminal 32a and select terminal 32c are in a non-conductive state (switching element 323 is in a non-conductive state), common terminal 30a and select terminal 30d are in a non-conductive state, common terminal 30a and select terminal 30e are in a non-conductive state, and switching element 34 is in a conductive state. Additionally, in the second mode, switching element 322 and switching element 324 are in a conductive state.

[0131] Alternatively, in the second mode, instead of switching element 34 being turned on, the bias current (voltage) supplied to low noise amplifier 22 is stopped, and / or the power supply voltage supplied to low noise amplifier 22 is stopped.

[0132] Thus, the received signal of band VLB1 is transmitted from antenna 2 to RFIC 3 via antenna connection terminal 100, switching circuit 30, filter 11, switching circuit 35, inductor 41, low noise amplifier 21 and high frequency output terminal 110.

[0133] At this time, in the first mode, the inductor 44 connected between the common terminal 31a and ground, by being connected to the inductor 41, can suppress the generation of the aforementioned notch filter circuit, and in the second mode, it can extend the passband of the filter 11 containing the elastic wave resonator. Therefore, the signal transmission loss of frequency band VLB1 in the second mode can be reduced.

[0134] Alternatively, in the second mode, the switching element 315 can be in a non-conducting state. In this case, the passband of the filter 11 is not extended in the second mode.

[0135] Furthermore, by connecting the inductor 44 to ground, the filter 11 can be protected from electrostatic discharge (ESD).

[0136] Alternatively, a series connection circuit between the switching element and the inductor can be connected between the common terminal 32a and ground. In this case, in the second mode, although the signal of frequency band LB1 does not flow through the signal path of frequency band LB1, the aforementioned switching element is turned on. Therefore, the other end of the inductor 42 is connected to ground. Thus, the parasitic capacitance connected to the inductor 41 is connected to the inductor 42 via ground, thereby suppressing the degradation of the Q value in the VLB1 frequency band of the inductor 41.

[0137] Furthermore, it is more ideal to connect the series connection circuit of the switching element and the inductor to the common terminal 31a and the ground, rather than connecting the series connection circuit of the switching element and the inductor to the common terminal 32a and the ground.

[0138] The minimum Q value of the inductor, caused by the notch filter circuit connected to the signal path, is more likely to occur at higher frequencies. Therefore, compared to transmitting signals in the ultra-low frequency band, the effect of suppressing the Q value degradation caused by the notch filter circuit is greater when transmitting signals in the low frequency band.

[0139] [8. Component Configuration Structure of High-Frequency Module 1]

[0140] Reference Figure 8 The component configuration structure of the high-frequency module 1 involved in the implementation method will be described. Figure 8 This is a top view showing the component configuration of the high-frequency module 1 according to the embodiment.

[0141] Figure 8 The diagram shows the configuration of a portion of the circuit components when viewed from the positive z-axis direction on the main surface 90a of the mounting substrate 90. Furthermore, in... Figure 8 The wiring diagram connecting the mounting base plate 90 and various circuit components is omitted from the drawing. Additionally, in... Figure 8In order to make the configuration relationship of the filters easier to understand, labels indicating their functions are marked, but the actual filters do not have these labels.

[0142] Figure 8 The high-frequency module 1 shown in the figure is relative to Figure 1 The high-frequency module 1 shown also includes a mounting base plate 90.

[0143] The mounting substrate 90 has a main surface 90a. Furthermore, wiring and conductive paths (not shown) are formed within and / or on the mounting substrate 90. The mounting substrate 90 can be, for example, a substrate made of a ceramic body (LTCC: Low Temperature Co-fired Ceramics) formed by low-temperature co-firing a laminate of multiple dielectric layers, or a substrate made of a ceramic body (HTCC: High Temperature Co-fired Ceramics) formed by high-temperature co-firing, a component-embedded substrate, a substrate having a redistribution layer (RDL: Redistribution Layer), or a printed circuit board, but is not limited to these.

[0144] like Figure 8 As shown, low-noise amplifiers 21 and 22, filters 11-14, and inductors 41-43 are disposed on the main surface 90a. Alternatively, at least one of the low-noise amplifiers 21 and 22, filters 11-14, and inductors 41-43 may be disposed on the main surface opposite to the main surface 90a. Furthermore, in Figure 8 The switch circuits 30-32, switch elements 33 and 34, antenna connection terminal 100, and high-frequency output terminals 110 and 120 are not shown in the figure, but these components and terminals may also be arranged on the mounting base plate 90.

[0145] Each of the inductors 41 to 43 is a surface-mount chip inductor. In addition, at least one of the inductors 41 to 43 may also be composed of a coil conductor formed on the mounting substrate 90.

[0146] like Figure 8 As shown, the winding axis direction of inductor 41 is consistent with the winding axis direction of inductor 43.

[0147] Accordingly, the magnetic field coupling between inductor 41 and inductor 43 is enhanced, thus reducing the inherent inductance value of inductor 41 compared to the case where there is no magnetic field coupling between inductor 41 and inductor 43. Consequently, the resistance value of inductor 41 is reduced, thereby decreasing the transmission loss of signals transmitted in the signal paths of frequency bands VLB1 and VLB2.

[0148] [9. Effects, etc.]

[0149] As described above, the high-frequency module 1 of this embodiment includes: low-noise amplifiers 21 and 22; a filter 11 having a passband that includes the receiving band of frequency band VLB1; a filter 13 having a passband that includes the receiving band of frequency band LB1; a switching circuit 31 having a common terminal 31a and a selection terminal 31b; and inductors 41-43, wherein one end of inductor 41 is connected to the input terminal of low-noise amplifier 21, and the other end of inductor 41 is connected to the common terminal 31a; one end of inductor 42 is connected to the input terminal of low-noise amplifier 22, and the other end of inductor 42 is connected to the output terminal of filter 13; the output terminal of filter 11 is connected to the selection terminal 31b; one end of inductor 43 is connected to the output terminal of filter 11, and the other end of inductor 43 is connected to ground; and the switching circuit 31 is configured such that, in a first mode in which low-noise amplifier 22 operates and low-noise amplifier 21 does not operate, the common terminal 31a and the selection terminal 31b are in a conducting state.

[0150] Accordingly, in the first mode, the other end of inductor 41 is connected to ground via inductor 43, thus avoiding the generation of a notch filter circuit composed of parasitic capacitance and inductor 41, and suppressing the Q-value degradation of inductor 42. Therefore, it is possible to suppress the degradation of signal quality of received signals through signal paths in frequency bands LB1 and LB2, and to suppress the degradation of the receiving sensitivity of signals in frequency bands LB1 and LB2 in high-frequency module 1.

[0151] Additionally, for example, the high-frequency module 1 also includes a switching circuit 30, which has a common terminal 30a, a selection terminal 30b and 30d. The common terminal 30a is connected to the antenna connection terminal 100, the input terminal of the filter 11 is connected to the selection terminal 30b, and the input terminal of the filter 13 is connected to the selection terminal 30d. In the first mode, the common terminal 31a and the selection terminal 31b are in a conducting state, the common terminal 30a and the selection terminal 30b are in a non-conducting state, and the common terminal 30a and the selection terminal 30d are in a conducting state.

[0152] Accordingly, in the first mode, without connecting the filter 11 and the inductor 43 to the antenna connection terminal 100, the inductor 43 and ground can be used as signal quality degradation suppression units for frequency bands LB1 and LB2.

[0153] Additionally, for example, the high-frequency module 1 also includes a filter 12, which has a passband that includes the receiving frequency band of frequency band VLB2. The switching circuit 31 also includes a selection terminal 31c. The output terminal of the filter 12 is connected to the selection terminal 31c. In the first mode, the common terminal 31a and the selection terminal 31b are in a conducting state, and the common terminal 31a and the selection terminal 31c are in a non-conducting state.

[0154] Accordingly, in the first mode, the other end of the inductor 41 can be strengthened.

[0155] Additionally, for example, the high-frequency module 1 also includes: a filter 14 having a passband that includes the receiving frequency band LB2; and a switching circuit 32 having a common terminal 32a, selection terminals 32b and 32c. The other end of the inductor 42 is connected to the output of the filter 13 via the switching circuit 32. The common terminal 32a is connected to the other end of the inductor 42, the selection terminal 32b is connected to the output of the filter 13, and the selection terminal 32c is connected to the output of the filter 14. In the switching circuit 32, in a first mode, the common terminal 32a and the selection terminal 32b or 32c are in a conducting state. In a second mode where the low-noise amplifier 21 operates and the low-noise amplifier 22 does not operate, the common terminal 31a and the selection terminal 31b or 31c are in a conducting state, and the common terminal 32a and the selection terminals 32b and 32c are in a non-conducting state.

[0156] Accordingly, in the first mode, the filter 13 or 14 and the low-noise amplifier 22 can be turned on, and in the second mode, the filter 13 and 14 and the low-noise amplifier 22 can be turned off.

[0157] Additionally, the high-frequency module 5 involved in the modified example includes: low-noise amplifiers 21 and 22; filter 11 having a passband covering the receiving frequency band of band VLB1; filter 13 having a passband covering the receiving frequency band of band LB1; filter 12 having a passband covering the receiving frequency band of band VLB2; switching circuit 35 having a common terminal 31a, selection terminals 31b and 31c; inductors 41, 42 and 44; and switching element 315, one end of inductor 41 being connected to the low-noise amplifier. The input terminal of the inductor 21 is connected, the other end of the inductor 41 is connected to the common terminal 31a, one end of the inductor 42 is connected to the input terminal of the low noise amplifier 22, the other end of the inductor 42 is connected to the output terminal of the filter 13, the output terminal of the filter 11 is connected to the selection terminal 31b, the output terminal of the filter 12 is connected to the selection terminal 31c, one end of the switching element 315 is connected to the common terminal 31a, the other end of the switching element 315 is connected to one end of the inductor 44, and the other end of the inductor 44 is connected to ground.

[0158] Accordingly, the other end of inductor 41 can be connected to ground via inductor 44. Therefore, by connecting the other end of inductor 41 to ground in the first mode of transmitting signals in frequency bands LB1 or LB2, the notch filter circuit consisting of parasitic capacitance and inductor 41, which may be connected to inductor 42, can be rendered ineffective. This suppresses the degradation of the Q value of inductor 42 in the first mode. Therefore, it suppresses the degradation of the signal quality of the received signal through the signal paths of frequency bands LB1 and LB2, and suppresses the degradation of the receiving sensitivity of signals in frequency bands LB1 and LB2 in the high-frequency module 5.

[0159] Additionally, for example, in the high-frequency module 5, the switching circuit 35 also has a selection terminal 31d and includes a switching element 315, one end of which is connected to the common terminal 31a, and the other end of which is connected to the selection terminal 31d. No filter is connected to the selection terminal 31d.

[0160] Accordingly, in the first mode, the other end of inductor 41 is connected to ground via switching circuit 35 and inductor 44, thus preventing the generation of a notch filter circuit composed of parasitic capacitance and inductor 41, and suppressing the Q-value degradation of inductor 42. Therefore, it is possible to suppress the degradation of signal quality of received signals through signal paths in frequency bands LB1 and LB2, and to suppress the degradation of the receiving sensitivity of signals in frequency bands LB1 and LB2 in the high-frequency module 5.

[0161] Additionally, for example, in the high-frequency module 5, in the first mode where the low-noise amplifier 22 operates and the low-noise amplifier 21 does not operate, the switching element 315 becomes in the on state.

[0162] Accordingly, in the first mode, the other end of inductor 41 is connected to ground via switching element 315 and inductor 44, thus preventing the formation of a notch filter circuit composed of parasitic capacitance and inductor 41, and suppressing the Q-value degradation of inductor 42. Therefore, it is possible to suppress the degradation of signal quality of received signals through signal paths in frequency bands LB1 and LB2, and to suppress the degradation of the receiving sensitivity of signals in frequency bands LB1 and LB2 in the high-frequency module 5.

[0163] Additionally, for example, the high-frequency module 5 also includes a switching circuit 30, which has a common terminal 30a, a selection terminal 30b and 30d. The common terminal 30a is connected to the antenna connection terminal 100, the input terminal of the filter 11 is connected to the selection terminal 30b, and the input terminal of the filter 13 is connected to the selection terminal 30d. In the first mode, the switching element 315 is in the on state, the common terminal 30a and the selection terminal 30b are in the off state, and the common terminal 30a and the selection terminal 30d are in the on state.

[0164] Accordingly, in the first mode, without connecting the filter 11 to the antenna connection terminal 100, the inductor 44 and ground can be used as signal quality degradation suppression units for frequency bands LB1 and LB2.

[0165] Additionally, for example, the high-frequency module 5 also includes: a filter 14 having a passband that includes the receiving frequency band LB2; and a switching circuit 32 having a common terminal 32a, selection terminals 32b and 32c. The other end of the inductor 42 is connected to the output of the filter 13 via the switching circuit 32. The common terminal 32a is connected to the other end of the inductor 42, the selection terminal 32b is connected to the output of the filter 13, and the selection terminal 32c is connected to the output of the filter 14. In the switching circuit 32, in a first mode, the common terminal 32a and the selection terminal 32b or 32c are in a conducting state. In a second mode where the low-noise amplifier 21 operates and the low-noise amplifier 22 does not operate, the common terminal 31a and the selection terminal 31b or 31c are in a conducting state, and the common terminal 32a and the selection terminals 32b and 32c are in a non-conducting state.

[0166] Accordingly, in the first mode, the filter 13 or 14 and the low-noise amplifier 22 can be turned on, and in the second mode, the filter 13 and 14 and the low-noise amplifier 22 can be turned off.

[0167] Additionally, for example, high-frequency modules 1 and 5 also include a switching element 33, which is connected between the input terminal of the low-noise amplifier 21 and ground, and in the first mode, the switching element 33 is in the on state.

[0168] Accordingly, the received signals of frequency bands VLB1 and VLB2 can be suppressed and input to the low noise amplifier 21, so that the low noise amplifier 21 can be in a non-operating state relative to the received signals.

[0169] Additionally, for example, in high-frequency modules 1 and 5, filter 11 includes an elastic wave resonator.

[0170] Accordingly, an inductor 43 (or inductor 44) is connected in parallel at the output of filter 11, thereby extending the passband of filter 11.

[0171] Additionally, for example, in high-frequency modules 1 and 5, frequency band VLB1 is located on the lower frequency side than frequency band LB1.

[0172] The minimum Q value of the inductor caused by the notch filter circuit connected to the signal path is more likely to occur at higher frequencies. Therefore, compared to the case of transmitting signals in the ultra-low frequency bands (VLB1 and VLB2), the effect of suppressing the Q value degradation caused by the notch filter circuit is greater when transmitting signals in the low frequency bands (LB1 and LB2).

[0173] Additionally, for example, in high-frequency modules 1 and 5, frequency band VLB1 belongs to the ultra-low frequency band group (600MHz-850MHz), and frequency band LB1 belongs to the low frequency band group (850MHz-1GHz).

[0174] Accordingly, high-frequency modules 1 and 5 can be used in LTE systems and / or 5G NR systems.

[0175] Additionally, for example, in the high-frequency module 1 (5), the winding axis direction of inductor 41 is consistent with the winding axis direction of inductor 43 (44).

[0176] Accordingly, the magnetic field coupling between inductor 41 and inductor 43 (44) is enhanced, thus reducing the inherent inductance value of inductor 41 compared to the case where there is no magnetic field coupling between inductor 41 and inductor 43 (44). Consequently, the resistance value of inductor 41 is reduced, thereby decreasing the transmission loss of signals transmitted in the signal paths of frequency bands VLB1 and VLB2.

[0177] In addition, the communication device 4 according to this embodiment (and the communication device 6 according to the modified example) includes: RFIC 3, which is configured to process high-frequency signals; and high-frequency module 1 (5), which is configured to transmit high-frequency signals between RFIC 3 and antenna 2.

[0178] Therefore, the same effect as the high-frequency module 1 (5) can be achieved in the communication device 4 (6).

[0179] (Other implementation methods)

[0180] The above description of the high-frequency module and communication device according to the present invention is based on embodiments and modifications. However, the high-frequency module and communication device according to the present invention are not limited to the above embodiments and modifications. Other embodiments implemented by combining any structural elements in the above embodiments and modifications, modifications obtained by implementing the above embodiments and modifications in various ways that can be conceived by those skilled in the art without departing from the spirit of the present invention, and various devices that incorporate the above high-frequency module are also included in the present invention.

[0181] For example, in the circuit structure of the high-frequency module involved in the above embodiments and modifications, other circuit elements and wiring may be inserted between the paths that connect the circuit elements and signal paths disclosed in the drawings.

[0182] Industrial availability

[0183] This invention, as a high-frequency module configured in the front end, can be widely used in communication devices such as portable telephones.

[0184] Explanation of reference numerals in the attached figures

[0185] 1, 5: High-frequency modules;

[0186] 2: Antenna;

[0187] 3: RFIC;

[0188] 4, 6: Communication device;

[0189] 11, 12, 13, 14: Filters;

[0190] 21, 22: Low-noise amplifiers;

[0191] 30, 31, 32, 35: Switching circuits;

[0192] 30a, 31a, 32a: Common terminals;

[0193] 30b, 30c, 30d, 30e, 31b, 31c, 31d, 32b, 32c: Select terminals;

[0194] 33, 34, 311, 312, 313, 314, 315, 321, 322, 323, 324: Switching elements;

[0195] 41, 42, 43, 44: Inductors;

[0196] 90: Mounting the substrate;

[0197] 90a: Main side;

[0198] 100: Antenna connection terminal;

[0199] 110, 120: High-frequency output terminals.

Claims

1. A high-frequency module, comprising: First low-noise amplifier and second low-noise amplifier; A first filter having a passband that includes the receiving frequency band of a first frequency band; The second filter has a passband that includes the receiving frequency band of the second frequency band; A first switching circuit has a first terminal and a second terminal; as well as First inductor, second inductor, and third inductor One end of the first inductor is connected to the input terminal of the first low-noise amplifier. The other end of the first inductor is connected to the first terminal. One end of the second inductor is connected to the input terminal of the second low-noise amplifier. The other end of the second inductor is connected to the output of the second filter. The output terminal of the first filter is connected to the second terminal. One end of the third inductor is connected to the output of the first filter. The other end of the third inductor is connected to ground. The first switching circuit is configured such that, in a first mode where the second low-noise amplifier is operating and the first low-noise amplifier is not operating, the first terminal and the second terminal are in a conducting state.

2. The high-frequency module according to claim 1, wherein, It also includes a second switching circuit, which has a first common terminal, a first selection terminal, and a second selection terminal. The first common terminal is connected to the antenna connection terminal. The input terminal of the first filter is connected to the first selection terminal. The input terminal of the second filter is connected to the second selection terminal. In the first mode, the first terminal and the second terminal are in a conductive state, the first common terminal and the first selected terminal are in a non-conductive state, and the first common terminal and the second selected terminal are in a conductive state.

3. The high-frequency module according to claim 1 or 2, wherein, It also includes a third filter, which has a passband that includes the receiving frequency band of a third frequency band. The first switching circuit also has a third terminal. The output terminal of the third filter is connected to the third terminal. In the first mode, the first terminal and the second terminal are in a conductive state, and the first terminal and the third terminal are in a non-conductive state.

4. The high-frequency module according to claim 3, wherein, It also has: A fourth filter having a passband that includes the receiving frequency band of a fourth frequency band; and The third switching circuit has a second common terminal, a third selection terminal, and a fourth selection terminal. The other end of the second inductor is connected to the output of the second filter via the third switching circuit. The second common terminal is connected to the other end of the second inductor. The third selection terminal is connected to the output terminal of the second filter. The fourth selection terminal is connected to the output terminal of the fourth filter. In the third switching circuit, In the first mode, the second common terminal is in a conductive state with either the third or the fourth selection terminal. In the second mode where the first low-noise amplifier is operating and the second low-noise amplifier is not operating, the first terminal is in a conducting state with the second terminal or the third terminal, and the second common terminal is in a non-conducting state with the third selection terminal and the fourth selection terminal.

5. A high-frequency module, comprising: First low-noise amplifier and second low-noise amplifier; A first filter having a passband that includes the receiving frequency band of a first frequency band; The second filter has a passband that includes the receiving frequency band of the second frequency band; The third filter has a passband that includes the receiving frequency band of the third frequency band; The first switching circuit has a first terminal, a second terminal and a third terminal; The first inductor, the second inductor, and the third inductor; and First switching element, One end of the first inductor is connected to the input terminal of the first low-noise amplifier. The other end of the first inductor is connected to the first terminal. One end of the second inductor is connected to the input terminal of the second low-noise amplifier. The other end of the second inductor is connected to the output of the second filter. The output terminal of the first filter is connected to the second terminal. The output terminal of the third filter is connected to the third terminal. One end of the first switching element is connected to the first terminal. The other end of the first switching element is connected to one end of the third inductor. The other end of the third inductor is connected to ground.

6. The high-frequency module according to claim 5, wherein, The first switching circuit also has a fourth terminal and includes the first switching element. One end of the first switching element is connected to the first terminal. The other end of the first switching element is connected to the fourth terminal. No filter is connected to the fourth terminal.

7. The high-frequency module according to claim 5 or 6, wherein, In the first mode where the second low-noise amplifier operates and the first low-noise amplifier does not operate, the first switching element becomes in the on state.

8. The high-frequency module according to claim 7, wherein, It also includes a second switching circuit, which has a first common terminal, a first selection terminal, and a second selection terminal. The first common terminal is connected to the antenna connection terminal. The input terminal of the first filter is connected to the first selection terminal. The input terminal of the second filter is connected to the second selection terminal. In the first mode, the first switching element is in a conducting state, the first common terminal and the first selection terminal are in a non-conducting state, and the first common terminal and the second selection terminal are in a conducting state.

9. The high-frequency module according to claim 7 or 8, wherein, It also has: A fourth filter having a passband that includes the receiving frequency band of a fourth frequency band; and The third switching circuit has a second common terminal, a third selection terminal, and a fourth selection terminal. The other end of the second inductor is connected to the output of the second filter via the third switching circuit. The second common terminal is connected to the other end of the second inductor. The third selection terminal is connected to the output terminal of the second filter. The fourth selection terminal is connected to the output terminal of the fourth filter. In the third switching circuit, In the first mode, the second common terminal is in a conductive state with either the third or the fourth selection terminal. In the second mode where the first low-noise amplifier is operating and the second low-noise amplifier is not operating, the first terminal is in a conducting state with the second terminal or the third terminal, and the second common terminal is in a non-conducting state with the third selection terminal and the fourth selection terminal.

10. The high-frequency module according to any one of claims 1-4 and 7-9, wherein, It also includes a second switching element, which is connected between the input terminal of the first low-noise amplifier and ground. In the first mode, the second switching element is in the on state.

11. The high-frequency module according to any one of claims 1 to 10, wherein, The first filter includes an elastic wave resonator.

12. The high-frequency module according to any one of claims 1 to 11, wherein, The first frequency band is located on the lower frequency side than the second frequency band.

13. The high-frequency module according to claim 12, wherein, The first frequency band belongs to the ultra-low frequency band group, namely 600MHz-850MHz. The second frequency band belongs to the low frequency band group, namely 850MHz-1GHz.

14. The high-frequency module according to any one of claims 1 to 13, wherein, The winding axis direction of the first inductor is consistent with the winding axis direction of the third inductor.

15. A communication device comprising: Signal processing circuit, configured to process high-frequency signals; and The high-frequency module according to any one of claims 1 to 14 is configured to transmit the high-frequency signal between the signal processing circuit and the antenna.

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