MEMS speaker and electronic device

Abstract

The present application relates to a kind of MEMS loudspeaker and electronic equipment.The MEMS loudspeaker includes: substrate, with cavity;Diaphragm, disposed above substrate, including from top to bottom stacked upper electrode, piezoelectric layer and lower electrode, in the top view of MEMS loudspeaker, diaphragm has length direction and in length direction opposite two ends, at least one of two ends is supported by substrate to form support end, in the lower surface of support end, the boundary of the region above substrate and the region above cavity is formed support edge;And reinforcement layer, disposed in one side of diaphragm, and in the length direction of diaphragm, reinforcement layer extends and crosses support edge.The embodiments of the present application are beneficial to improve the reliability of the diaphragm of MEMS loudspeaker when impacted.

Description

Technical Field

[0001] Embodiments of the present invention relate to the semiconductor field, and more particularly to a MEMS loudspeaker and an electronic device. Background Technology

[0002] Micro-electro-mechanical systems (MEMS) are electromechanical systems with internal structures at the micrometer or even nanometer scale. MEMS are characterized by their small size, light weight, low power consumption, high reliability, high sensitivity, and ease of integration.

[0003] MEMS loudspeakers are miniature transducers that convert electrical signals into sound signals. Their core components (such as actuators / drivers, diaphragms, thermoacoustic diaphragms, etc.) are manufactured on semiconductor materials using MEMS technology. MEMS loudspeakers can be classified into piezoelectric, electrodynamic, electrostatic, and thermoacoustic types according to their working principle.

[0004] When existing MEMS loudspeakers are subjected to external impact (such as falling from a certain height to the ground), the impact is transmitted from the substrate to the diaphragm, causing damage or even breakage of the diaphragm. Summary of the Invention

[0005] In response to at least one aspect of the above-mentioned problems, the present invention proposes the following technical solution.

[0006] A substrate having a cavity; a diaphragm disposed above the substrate, comprising an upper electrode, a piezoelectric layer, and a lower electrode stacked from top to bottom, wherein, in a top view of the MEMS loudspeaker, the diaphragm has a length direction and two opposite ends in the length direction, at least one of the ends being supported by the substrate to form a support end, and a support edge being formed at the boundary between a region above the substrate and a region above the cavity on the lower surface of the support end; and a reinforcing layer disposed on one side of the diaphragm, and extending across the support edge in the length direction of the diaphragm.

[0007] According to another aspect of the embodiments of the present invention, an electronic device is provided, which includes the aforementioned MEMS speaker. Attached Figure Description

[0008] The following description and accompanying drawings will better aid in understanding these and other features and advantages of the various embodiments disclosed herein, wherein the same reference numerals in the drawings always denote the same parts, wherein:

[0009] Figure 1 This is a top view of a MEMS loudspeaker according to an exemplary embodiment of the present invention, wherein the diaphragm is supported at one end;

[0010] Figure 2 for Figure 1 A schematic diagram of the cross-section obtained by cutting a MEMS loudspeaker along AA'.

[0011] Figure 3 and Figure 4 for Figure 2 Deformation of the MEMS loudspeaker;

[0012] Figure 5 This is a top view of a MEMS loudspeaker according to an exemplary embodiment of the present invention, wherein the diaphragm is supported at both ends;

[0013] Figure 6 for Figure 5 A schematic diagram of the cross-section obtained by cutting the MEMS loudspeaker along BB'.

[0014] Figures 7-9A This is a top view schematic diagram of a MEMS loudspeaker according to different exemplary embodiments of the present invention, showing different forms of energy dissipation structures near the edge of the reinforcement layer;

[0015] Figure 9B for Figure 9A A magnified schematic diagram of a medium-energy dissipation structure;

[0016] Figure 10 This is a top view of a MEMS loudspeaker according to an exemplary embodiment of the present invention, which utilizes the extension of existing electrical leads to form a reinforcing layer;

[0017] Figure 11 This is a top view of a MEMS loudspeaker according to an exemplary embodiment of the present invention, wherein the reinforcing layer has a significant indentation at its edge in the diaphragm width direction;

[0018] Figure 12 and Figure 13 This is a top view schematic diagram of a MEMS loudspeaker according to different exemplary embodiments of the present invention. Figure 11 An energy dissipation structure was added to the existing structure;

[0019] Figure 14 This is a top view schematic diagram of a MEMS loudspeaker according to an exemplary embodiment of the present invention, wherein the diaphragm adopts a double piezoelectric layer structure;

[0020] Figure 15 for Figure 14 A cross-sectional schematic diagram of a MEMS loudspeaker;

[0021] Figure 16 for Figure 15 The deformation of a MEMS loudspeaker, wherein the upper piezoelectric layer is provided with a cavity and the reinforcing layer extends into the cavity;

[0022] Figure 17 for Figure 14 A modified MEMS loudspeaker, in which an electrical lead-out section is provided;

[0023] Figure 18 for Figure 17 The deformation of a MEMS loudspeaker, wherein the reinforcing layer is formed by the extension of the electrical leads;

[0024] Figure 19 for Figure 18 A schematic diagram of the cross-section of a MEMS loudspeaker. Detailed Implementation

[0025] The technical solution of the present invention will be further described in detail below through embodiments and in conjunction with the accompanying drawings. In this specification, the same or similar reference numerals indicate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the overall inventive concept of the present invention and should not be construed as a limitation thereof. These are only some embodiments of the invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention are within the scope of protection of the present invention.

[0026] In this invention, the MEMS loudspeaker can achieve energy conversion based on the piezoelectric effect.

[0027] In this invention, a top view can refer to a view obtained by observing the surface of the substrate on which the diaphragm is disposed from the thickness direction of the substrate or MEMS loudspeaker.

[0028] In embodiments of the present invention, by providing a reinforcing layer, the diaphragm is reinforced on the one hand (by increasing the diaphragm thickness), and the propagation mode of the impact is changed on the other hand (the impact energy is dispersed and absorbed), thereby improving the reliability of the MEMS loudspeaker diaphragm when subjected to impact.

[0029] Figure 1 This is a top view schematic diagram of a MEMS loudspeaker according to an exemplary embodiment of the present invention. Figure 2 for Figure 1 A cross-sectional schematic diagram of a MEMS loudspeaker. (Example) Figure 1 As shown, the MEMS loudspeaker includes a substrate S100, and the substrate S100 has a cavity S110 extending through the substrate. A diaphragm F100 is disposed above the substrate S100. The diaphragm F100 includes an upper electrode, a piezoelectric layer, and a lower electrode stacked from top to bottom. The number of piezoelectric layers can be single, two, or multiple. Here, the diaphragm F100 is illustrated in a simplified manner. Figure 1As shown, the diaphragm F100 has a length direction (horizontal direction in the figure) and a width direction (vertical direction in the figure), as well as two opposite ends in the length direction (left and right ends in the figure) and two opposite ends in the width direction (upper and lower ends in the figure). At least one end of the diaphragm F100 in the length direction (e.g., the left end in the figure) is supported by a substrate to form a support end.

[0030] like Figure 2 As shown, a support edge BD100 is formed at the boundary between the region above the substrate S100 and the region above the cavity S110 on the lower surface of the support end (left end in the figure) of the diaphragm F100.

[0031] like Figure 1 and Figure 2 As shown, the MEMS speaker includes a reinforcement layer FT100. Figure 2 As shown, the reinforcing layer FT100 is disposed on one side of the diaphragm F100 (e.g., the upper side in the figure), and in the length direction of the diaphragm F100 (e.g., the horizontal direction in the figure), the reinforcing layer FT100 extends and crosses the support edge BD100. In other words, in the length direction of the diaphragm F100 (e.g., the horizontal direction in the figure), the reinforcing layer FT100 is continuous and is divided into a portion located on the left side of the support edge BD100 and a portion located on the right side of the support edge BD100.

[0032] In some embodiments, such as Figure 1 As shown, the upper and lower edges of the reinforcing layer FT100 are aligned with the upper and lower edges of the diaphragm F100. In other embodiments, such as Figure 11 As shown, the upper and lower edges of the reinforcing layer FT100 are recessed inward relative to the upper and lower edges of the diaphragm F100. Optionally, the width of the reinforcing layer FT100 is less than or equal to the width of the diaphragm F100. A larger width of the reinforcing layer FT100 results in better reinforcement; however, a larger width also leads to a more significant vibration suppression effect on the speaker (lower speaker sensitivity). Therefore, from a sensitivity perspective, a smaller width of the reinforcing layer FT100 is better. In summary, the width of the reinforcing layer needs to be selected based on the requirements for impact resistance and sensitivity.

[0033] Optional, such as Figure 1 and Figure 2As shown, along the length of the diaphragm F100, the ratio of the length of the portion of the unsupported part of the diaphragm F100 (the portion between the supporting edge BD100 and the right end of the diaphragm F100 in the figure) that contacts the reinforcing layer FT100 to the total length of the unsupported portion of the diaphragm F100 is less than or equal to 100%. The longer the portion of the diaphragm F100 that contacts the reinforcing layer FT100, the better the reinforcement effect. However, as the length increases, the increase in reinforcement effect decreases; in other words, the closer the reinforcing layer is to the supporting edge BD100, the better the reinforcement effect. On the other hand, the longer the portion of the diaphragm F100 that contacts the reinforcing layer FT100, the more significant the vibration suppression effect of the reinforcing layer FT100 on the speaker (the speaker's sensitivity decreases). Therefore, from a sensitivity perspective, the shorter the portion of the diaphragm F100 that contacts the reinforcing layer FT100, the better. In summary, the length of the reinforcing layer FT100 should not be too long, and the closer the reinforcing layer FT100 is to the supporting edge BD100, the better. It should first cover the supporting edge BD100 and then extend away from it, but not completely cover the diaphragm F100. Preferably, the reinforcing layer FT100 covers the supporting edge BD100 and extends away from it, with the length covering the diaphragm F100 being less than 20% of the total diaphragm length.

[0034] Optional, such as Figure 1 As shown, the ratio of the surface area of ​​the unsupported portion of the diaphragm F100 in contact with the reinforcing layer FT100 (the area of ​​the reinforcing layer FT100 from the supporting edge BD100 to its right end in the figure) to the corresponding surface area of ​​the unsupported portion of the diaphragm F100 (the area of ​​the diaphragm F100 from the supporting edge BD100 to its right end in the figure) is less than or equal to 100%. A larger area of ​​the reinforcing layer FT100 results in better reinforcement; however, a larger area of ​​the reinforcing layer FT100 also leads to a more significant vibration suppression effect on the speaker (lower speaker sensitivity). Therefore, from a sensitivity perspective, a smaller area of ​​the reinforcing layer FT100 is better. In summary, the area of ​​the reinforcing layer needs to be selected based on the requirements for impact resistance and sensitivity.

[0035] In embodiments of the present invention, the material of the reinforcing layer FT100 can be a dielectric material, such as silicon dioxide, silicon nitride, aluminum nitride, silicon carbide, or metal oxide, such as aluminum oxide, etc. It can also be a metallic material, such as gold, copper, titanium, tungsten, chromium, iridium, osmium, etc., or a polymer material, such as polyurethane, etc.

[0036] The thickness of the reinforcing layer is 10% to 200% of the total diaphragm thickness (excluding the reinforcing layer) (the boundary values ​​of the above range can be taken as equals). Preferably, the thickness of the reinforcing layer is 20% to 50% of the total diaphragm thickness (excluding the reinforcing layer) (the boundary values ​​of the above range can be taken as equals). When the thickness of the reinforcing layer is too large, the reinforcing layer will affect the movement of the diaphragm, resulting in a decrease in sensitivity; when the thickness of the reinforcing layer is too small, the effect of the reinforcing layer on the impact resistance of the speaker will be greatly reduced.

[0037] Figure 3 for Figure 2 Deformation of MEMS loudspeakers.

[0038] exist Figure 2 In the diagram, the edge of the supporting end of the diaphragm F100 (the left edge in the figure) is spaced a certain distance from the corresponding edge of the substrate S100 (the left edge in the figure). Part of the reinforcing layer FT100 is located on the upper surface of the diaphragm F100, and another part is located on the upper surface of the substrate S100. Meanwhile... Figure 3 In the figure, the edge of the support end of the diaphragm F100 (the left edge in the figure) is flush with the corresponding edge of the substrate S100 (the left edge in the figure), and the entire reinforcing layer FT100 is located on the upper surface of the diaphragm F100.

[0039] Figure 4 for Figure 2 Deformation of MEMS loudspeakers.

[0040] exist Figure 2 In the middle, the reinforcing layer FT100 is located on the upper side of the diaphragm F100, while... Figure 4 In the middle, the reinforcing layer FT100 is located on the lower side of the diaphragm F100.

[0041] like Figure 4 As shown, the reinforcing layer FT100 is suspended above the cavity S110 via the supporting edge BD100, and extends to the left across the supporting edge BD100 to the upper surface of the substrate S100. The diaphragm F100 is suspended above the cavity S110 via the supporting edge BD100, and covers the upper surface of the reinforcing layer FT100 above the substrate S100. The diaphragm F100 crosses the right edge of the diaphragm F100 and extends to form a slit with the right edge of the cavity S110. The diaphragm F100 crosses the supporting edge BD100 to the left of the reinforcing layer FT100 on the upper surface to the left of the supporting edge BD100, and continues to cross the left edge of the reinforcing layer FT100 to the upper surface and left edge of the substrate S100.

[0042] Figure 5 This is a top view of a MEMS loudspeaker according to an exemplary embodiment of the present invention, wherein the diaphragm is supported at both ends. Figure 6 for Figure 5A schematic diagram of the cross-section of a MEMS loudspeaker.

[0043] like Figure 5 and Figure 6 As shown, the supporting edge is the cavity S110 located at the two left and right edges BD100 and BD101 of the opening on the upper surface of the substrate S100. The diaphragm F100 is suspended above the cavity S110 through the supporting edges BD100 and BD101. The reinforcing layers FT100 and FT101 cover a portion of the upper surface of the left and right sides of the diaphragm F100, respectively.

[0044] In embodiments of the present invention, an energy dissipation structure suitable for dissipating impact energy may be further provided near the edge of the reinforcing layer FT100. Figures 7-9A This is a top view schematic diagram of a MEMS loudspeaker according to different exemplary embodiments of the present invention, showing different forms of energy dissipation structures near the edge of the reinforcement layer.

[0045] Optionally, the energy dissipation structure may include non-flush edges, such as... Figure 7 As shown, non-flush edges include jagged edges (rectangular jagged edges in the figure, but can also be other shapes of jagged edges, such as triangular jagged edges), as... Figure 8 As shown, the non-flush edges include wavy edges. This structure helps to disperse and dissipate impact energy, thereby reducing damage to the diaphragm structure.

[0046] Optional, such as Figure 9A As shown, the energy dissipation structure may include protrusions or recesses along the thickness direction of the reinforcing layer. The number of protrusions or recesses may be one or more. The recesses may be through-holes or blind holes. Furthermore, the energy dissipation structure may include combinations of protrusions, through-holes, and blind holes along the thickness direction of the reinforcing layer. This structure facilitates the dispersion and dissipation of impact energy, thereby reducing damage to the diaphragm structure.

[0047] Figure 9B for Figure 9A A magnified schematic diagram of a medium-energy dissipation structure. (See diagram below.) Figure 9B As shown, the protrusions or recesses are cylindrical in shape; that is, the protrusions are cylinders and the recesses are circular holes. In other embodiments, although not shown, the protrusions or recesses may be other shapes, such as cuboids, cones, etc.

[0048] like Figure 9BAs shown, there are multiple protrusions or depressions in both the length and width directions of the diaphragm, forming an array with protrusions or depressions as array units. In the length direction of the diaphragm, the cross-sectional area of ​​the array units gradually decreases in the direction away from the support end (e.g., direction 1 in the figure), and the arrangement density of the array units in the width direction of the diaphragm (e.g., direction 2 in the figure) gradually increases in the direction away from the support end (e.g., direction 1 in the figure).

[0049] The cross-sectional area of ​​the array unit mentioned above refers to the area of ​​the cross section obtained by cutting the array unit with a plane perpendicular to the extension direction (i.e., the thickness direction) of the array unit.

[0050] The array unit density along the diaphragm width refers to the number of array units arranged within a certain distance along the diaphragm width. This certain distance should be sufficiently large to reflect the density of the array unit distribution.

[0051] For example, such as Figure 9B As shown, the array unit comprises three columns, namely HB101, HB102, and HB103. Each column is arranged along the width direction of the diaphragm (direction 2 in the figure), and the cross-sectional area of ​​each array unit in each column is the same. Columns HB101, HB102, and HB103 are arranged along direction 1, and the distance to the support end increases sequentially (i.e., gradually moves away from the support end). Correspondingly, the arrangement density of the array units corresponding to columns HB101, HB102, and HB103 in the width direction of the diaphragm increases sequentially.

[0052] Figure 11 This is a top view schematic diagram of a MEMS loudspeaker according to an exemplary embodiment of the present invention, wherein the reinforcing layer has a significant indentation at its edge in the diaphragm width direction. For example... Figure 11 As shown, in the width direction of the diaphragm F100, the distance between each edge of the reinforcing layer FT100 (the upper or lower edge in the figure) and the corresponding edge of the diaphragm F100 (the upper or lower edge in the figure) is greater than a preset threshold, such as 20% of the width of the diaphragm F100. This structure, on the one hand, reduces the adverse effects of the reinforcing layer on the performance of the MEMS loudspeaker by reducing the area of ​​the reinforcing layer; on the other hand, by recessing the edge of the reinforcing layer in the width direction of the diaphragm, a portion of the impact energy that would originally propagate along the length direction of the diaphragm can be dispersed in the width direction.

[0053] Figure 12 and Figure 13 This is a top view schematic diagram of a MEMS loudspeaker according to different exemplary embodiments of the present invention. Figure 11 An energy dissipation structure was added to the existing structure.

[0054] like Figure 12As shown, in the width direction of the diaphragm F100, the two edges of the reinforcing layer FT100 are provided with rectangular protrusions E3 and E4 (equivalent to a single sawtooth), which play a role in dissipating impact energy.

[0055] like Figure 13 As shown, in the width direction of the diaphragm F100, the two edges of the reinforcing layer FT100 are provided with wave edges E5 and E6, which play a role in dissipating impact energy.

[0056] Figure 14 This is a top view schematic diagram of a MEMS loudspeaker according to an exemplary embodiment of the present invention, wherein the diaphragm adopts a double piezoelectric layer structure. Figure 15 for Figure 14 A schematic diagram of the cross-section of a MEMS loudspeaker.

[0057] like Figure 14 and Figure 15 As shown, the MEMS loudspeaker has a set of dual-sided diaphragms with a single fixed edge. The left diaphragm is fixed to the support edge BD100 of the cavity S110 on the substrate S100, and the right diaphragm is fixed to the other support edge BD101 of the cavity S110. The left and right diaphragms are separated by a slit C100. Each diaphragm contains two piezoelectric layers. Taking the left diaphragm as an example (the topology of the right diaphragm is symmetrical to the left diaphragm about the slit C100), from bottom to top, it includes a seed layer SD110, a bottom electrode BE110, a lower piezoelectric layer P110, a middle electrode ME110, an upper piezoelectric layer P210, and a top electrode TE110. The bottom electrode BE110, the lower piezoelectric layer P110, and the middle electrode ME110 constitute the first sandwich structure, and the middle electrode ME110, the upper piezoelectric layer P210, and the top electrode TE110 constitute the second sandwich structure. The two sandwich structures share the middle electrode ME110. The left edge of the intermediate electrode ME100 extends slightly beyond the supporting edge BD100 to the left, while the lower piezoelectric layer P110 and the upper piezoelectric layer P210 extend slightly beyond the supporting edge BD100 to the left, forming piezoelectric layer extensions P111 and P211 that reach the left edge of the substrate S100. The reinforcing layer FT100 covers the upper left surface of the top electrode TE110 and extends slightly beyond the supporting edge BD100 to the left, covering the upper surface of the piezoelectric layer extension P211.

[0058] Figure 16 for Figure 15 The deformation of a MEMS loudspeaker, wherein the upper piezoelectric layer has a cavity and the reinforcing layer extends into the cavity. For example... Figure 16As shown, taking the left diaphragm as an example, a through-type or blind-end cavity PC210 can be formed in the upper piezoelectric layer P210 above the support edge BD100, so that a portion of the material of the reinforcing layer FT100 fills the cavity PC210 and replaces part of the piezoelectric material. This structure can utilize the flexibility of the reinforcing material to overcome the brittleness of the piezoelectric material to a certain extent.

[0059] Figure 17 for Figure 14 The modified MEMS loudspeaker includes an electrical lead-out section.

[0060] like Figure 17 As shown, taking the left-side diaphragm as an example, the first electrical lead M111 and the second electrical lead M112 (shown in bold black lines) are located on the surface of the piezoelectric layer extension P211 on the substrate S100 on the left side of the sandwich structure. The first electrical lead M111 is connected via its extension (shown in bold black lines, not labeled) to the bottom electrode extension and the top electrode (see [reference]) located at the bottom of the via. Figure 19 On the left side, the first electrical lead M111 is electrically connected to the bottom electrode BE110 and the top electrode TE110. The second electrical lead M112 is connected via its extension (shown in bold black lines, not labeled) to the middle layer electrode extension at the bottom of the through-hole (see [reference]). Figure 19 On the right side, the second electrical lead-out section M122 is electrically connected to the intermediate electrode ME120. The reinforcing layer FT100 covers the upper left surface of the diaphragm top electrode TE110 and extends to the left across the support edge BD100, covering the right side of the right edge of the first electrical lead-out section M111 and the second electrical lead-out section M112.

[0061] Figure 18 for Figure 17 The deformation of the MEMS loudspeaker, in which the reinforcing layer is formed by the extension of the electrical leads. Figure 19 for Figure 18 A schematic diagram of the cross-section of a MEMS loudspeaker, which corresponds to... Figure 18 A cross-sectional view formed by cutting along the broken line A1B1B2A1.

[0062] like Figure 18 and Figure 19 As shown, taking the left-side diaphragm as an example, a reinforcing layer can be fabricated using the same metal material used to make the first electrical lead M111 and the second electrical lead M112. Specifically, the extension of either the first electrical lead M111 or the second electrical lead M112 extends further towards the upper surface of the right-side top electrode TE110 after contacting the extension of the top electrode TE111, until a portion of the top electrode is covered by the metal material of the first electrical lead M111 or the second electrical lead M112. The advantages of this structure are improved material and process utilization efficiency, simplified film structure, and reduced cost.

[0063] For the reinforcing layer formed by extending inward through the electrical leads, its edge near the fixed end of the diaphragm has a rectangular protrusion, see [reference needed]. Figure 10 Two rectangular protrusions on the left edge of the middle.

[0064] Embodiments of the present invention also provide an electronic device, including the aforementioned MEMS speaker.

[0065] Based on the above, the present invention proposes the following technical solution:

[0066] 1. A MEMS loudspeaker, comprising:

[0067] Substrate, having a cavity;

[0068] A diaphragm, disposed above the substrate, includes an upper electrode, a piezoelectric layer, and a lower electrode stacked from top to bottom. In a top view of the MEMS loudspeaker, the diaphragm has two opposing ends along its length, at least one of which is supported by the substrate to form a support end. A support edge is formed at the boundary between the region above the substrate and the region above the cavity on the lower surface of the support end.

[0069] A reinforcing layer is disposed on one side of the diaphragm, and the reinforcing layer extends across the support edge in the longitudinal direction of the diaphragm.

[0070] 2. The MEMS loudspeaker according to claim 1, wherein:

[0071] In the length direction, the length of the portion of the unsupported portion of the diaphragm that contacts the reinforcing layer is less than the total length of the unsupported portion of the diaphragm.

[0072] 3. The MEMS loudspeaker according to claim 2, wherein:

[0073] The ratio of the length of the portion of the unsupported portion of the diaphragm that contacts the reinforcing layer to the total length of the unsupported portion of the diaphragm is less than or equal to 20%.

[0074] 4. The MEMS loudspeaker according to claim 1, wherein:

[0075] In the top view of the MEMS loudspeaker, in the width direction perpendicular to the length direction, the width of the reinforcing layer is less than or equal to the width of the diaphragm.

[0076] 5. The MEMS loudspeaker according to claim 1, wherein:

[0077] The ratio of the surface area of ​​the unsupported portion of the diaphragm in contact with the reinforcing layer to the corresponding surface area of ​​the unsupported portion of the diaphragm is less than or equal to 100%.

[0078] 6. The MEMS loudspeaker according to claim 1, wherein:

[0079] An energy dissipation structure suitable for dissipating impact energy is provided near at least one edge of the reinforcement layer.

[0080] 7. The MEMS loudspeaker according to 6, wherein:

[0081] The energy dissipation structure includes non-flush edges.

[0082] 8. The MEMS loudspeaker according to 7, wherein:

[0083] The non-flush edge includes at least one of a serrated edge and a wavy edge.

[0084] 9. The MEMS loudspeaker according to claim 6, wherein:

[0085] The energy dissipation structure includes protrusions or depressions along the thickness direction of the reinforcement layer.

[0086] 10. The MEMS loudspeaker according to claim 9, wherein:

[0087] The protrusion or depression is cylindrical in shape.

[0088] 11. The MEMS loudspeaker according to claim 9, wherein:

[0089] In both the length and width directions of the diaphragm, there are multiple protrusions or depressions, forming an array with the protrusions or depressions as array units;

[0090] Along the length of the diaphragm, the cross-sectional area of ​​the array unit gradually decreases in the direction away from the support end, and the arrangement density of the array unit in the width direction of the diaphragm gradually increases in the direction away from the support end.

[0091] 12. The MEMS loudspeaker according to claim 6, wherein:

[0092] In a top view of the MEMS loudspeaker, the energy dissipation structure is disposed near the edge of the reinforcing layer at the support end of the diaphragm in the longitudinal direction of the diaphragm.

[0093] 13. The MEMS loudspeaker according to claim 6, wherein:

[0094] In a top view of the MEMS loudspeaker, the energy dissipation structure is disposed near at least one edge of the reinforcing layer in the width direction of the diaphragm, the width direction of the diaphragm being perpendicular to the length direction of the diaphragm.

[0095] 14. The MEMS loudspeaker according to claim 1, wherein:

[0096] In the top view of the MEMS loudspeaker, in the width direction perpendicular to the length direction, the distance between each edge of the reinforcement layer and the corresponding edge of the diaphragm is greater than a preset threshold.

[0097] 15. The MEMS loudspeaker according to 14, wherein:

[0098] The preset threshold is 20% of the width of the diaphragm.

[0099] 16. The MEMS loudspeaker according to claim 1, wherein:

[0100] The piezoelectric layer includes an upper piezoelectric layer and a lower piezoelectric layer, and the diaphragm also includes an intermediate electrode located between the upper piezoelectric layer and the lower piezoelectric layer.

[0101] 17. The MEMS loudspeaker according to 16, wherein:

[0102] The MEMS loudspeaker includes a first electrical lead-out portion and a second electrical lead-out portion located outside the diaphragm. The first electrical lead-out portion covers the upper electrode and is connected to the lower electrode through a first through hole located in the thickness direction of the MEMS loudspeaker. The second electrical lead-out portion is connected to the middle electrode through a second through hole located in the thickness direction of the MEMS loudspeaker.

[0103] The reinforcing layer is formed by extending inward from the first electrical lead and / or the second electrical lead.

[0104] 18. The MEMS loudspeaker according to any one of 1-17, wherein:

[0105] The piezoelectric layer has a cavity, and the reinforcing layer extends into the cavity.

[0106] 19. The MEMS loudspeaker according to any one of 1-17, wherein:

[0107] The reinforcing layer is disposed on the upper side of the diaphragm.

[0108] 20. The MEMS loudspeaker according to 19, wherein:

[0109] The edge of the supporting end of the diaphragm is spaced a certain distance from the corresponding edge of the substrate, and the reinforcing layer simultaneously covers part of the upper surface of the diaphragm and part of the upper surface of the substrate.

[0110] 21. The MEMS loudspeaker according to 19, wherein:

[0111] The edge of the support end of the diaphragm is flush with the corresponding edge of the substrate, and the reinforcing layer covers part of the upper surface of the diaphragm.

[0112] 22. The MEMS loudspeaker according to any one of 1-17, wherein:

[0113] The reinforcing layer is disposed on the underside of the diaphragm.

[0114] 23. The MEMS loudspeaker according to any one of 1-17, wherein:

[0115] The material of the reinforcing layer includes at least one of dielectric materials, metallic materials, and polymer materials.

[0116] 24. The MEMS loudspeaker according to any one of 1-17, wherein:

[0117] The thickness of the reinforcement layer is 10%-200% of the thickness of the diaphragm.

[0118] 25. The MEMS loudspeaker according to 24, wherein:

[0119] The thickness of the reinforcement layer is 20%-50% of the thickness of the diaphragm.

[0120] 26. The MEMS loudspeaker according to claim 1, wherein:

[0121] The reinforcing layer is formed by extending inward from the electrical lead-out portion located above the diaphragm.

[0122] 27. An electronic device comprising a MEMS loudspeaker according to any one of claims 1-26.

[0123] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that variations may be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A MEMS loudspeaker, comprising: Substrate, having a cavity; A diaphragm, disposed above the substrate, includes an upper electrode, a piezoelectric layer, and a lower electrode stacked from top to bottom. In a top view of the MEMS loudspeaker, the diaphragm has a length direction and two opposite ends in the length direction. At least one of the two ends is supported by the substrate to form a support end. In the lower surface of the support end, a support edge is formed at the boundary between the region above the substrate and the region above the cavity. as well as A reinforcing layer is disposed on one side of the diaphragm, and the reinforcing layer extends along the length of the diaphragm and across the supporting edge.

2. The MEMS loudspeaker according to claim 1, wherein: In the length direction, the length of the portion of the unsupported portion of the diaphragm that contacts the reinforcing layer is less than the total length of the unsupported portion of the diaphragm.

3. The MEMS loudspeaker according to claim 2, wherein: The ratio of the length of the portion of the unsupported portion of the diaphragm that contacts the reinforcing layer to the total length of the unsupported portion of the diaphragm is less than or equal to 20%.

4. The MEMS loudspeaker according to claim 1, wherein: In the top view of the MEMS loudspeaker, in the width direction perpendicular to the length direction, the width of the reinforcing layer is less than or equal to the width of the diaphragm.

5. The MEMS loudspeaker according to claim 1, wherein: The ratio of the surface area of ​​the unsupported portion of the diaphragm in contact with the reinforcing layer to the corresponding surface area of ​​the unsupported portion of the diaphragm is less than or equal to 100%.

6. The MEMS loudspeaker according to claim 1, wherein: An energy dissipation structure suitable for dissipating impact energy is provided near at least one edge of the reinforcement layer.

7. The MEMS loudspeaker according to claim 6, wherein: The energy dissipation structure includes non-flush edges.

8. The MEMS loudspeaker according to claim 7, wherein: The non-flush edge includes at least one of a serrated edge and a wavy edge.

9. The MEMS loudspeaker according to claim 6, wherein: The energy dissipation structure includes protrusions or depressions along the thickness direction of the reinforcement layer.

10. The MEMS loudspeaker according to claim 9, wherein: The protrusion or depression is cylindrical in shape.

11. The MEMS loudspeaker according to claim 9, wherein: In both the length and width directions of the diaphragm, there are multiple protrusions or depressions, forming an array with the protrusions or depressions as array units; Along the length of the diaphragm, the cross-sectional area of ​​the array unit gradually decreases in the direction away from the support end, and the arrangement density of the array unit in the width direction of the diaphragm gradually increases in the direction away from the support end.

12. The MEMS loudspeaker according to claim 6, wherein: In a top view of the MEMS loudspeaker, the energy dissipation structure is disposed near the edge of the reinforcing layer on the longitudinal direction of the diaphragm, away from the supporting end of the diaphragm.

13. The MEMS loudspeaker according to claim 6, wherein: In a top view of the MEMS loudspeaker, the energy dissipation structure is disposed near at least one edge of the reinforcing layer in the width direction of the diaphragm, the width direction of the diaphragm being perpendicular to the length direction of the diaphragm.

14. The MEMS loudspeaker according to claim 1, wherein: In the top view of the MEMS loudspeaker, in the width direction perpendicular to the length direction, the distance between each edge of the reinforcement layer and the corresponding edge of the diaphragm is greater than a preset threshold.

15. The MEMS loudspeaker according to claim 14, wherein: The preset threshold is 20% of the width of the diaphragm.

16. The MEMS loudspeaker according to claim 1, wherein: The piezoelectric layer includes an upper piezoelectric layer and a lower piezoelectric layer, and the diaphragm also includes an intermediate electrode located between the upper piezoelectric layer and the lower piezoelectric layer.

17. The MEMS loudspeaker according to claim 16, wherein: The MEMS loudspeaker includes a first electrical lead-out portion and a second electrical lead-out portion located outside the diaphragm. The first electrical lead-out portion covers the upper electrode and is connected to the lower electrode through a first through hole located in the thickness direction of the MEMS loudspeaker. The second electrical lead-out portion is connected to the middle electrode through a second through hole located in the thickness direction of the MEMS loudspeaker. The reinforcing layer is formed by extending inward from the first electrical lead and / or the second electrical lead.

18. The MEMS loudspeaker according to any one of claims 1-17, wherein: The piezoelectric layer has a cavity, and the reinforcing layer extends into the cavity.

19. The MEMS loudspeaker according to any one of claims 1-17, wherein: The reinforcing layer is disposed on the upper side of the diaphragm.

20. The MEMS loudspeaker according to claim 19, wherein: The edge of the supporting end of the diaphragm is spaced a certain distance from the corresponding edge of the substrate, and the reinforcing layer simultaneously covers part of the upper surface of the diaphragm and part of the upper surface of the substrate.

21. The MEMS loudspeaker according to claim 19, wherein: The edge of the support end of the diaphragm is flush with the corresponding edge of the substrate, and the reinforcing layer covers part of the upper surface of the diaphragm.

22. The MEMS loudspeaker according to any one of claims 1-17, wherein: The reinforcing layer is disposed on the underside of the diaphragm.

23. The MEMS loudspeaker according to any one of claims 1-17, wherein: The material of the reinforcing layer includes at least one of dielectric materials, metallic materials, and polymer materials.

24. The MEMS loudspeaker according to any one of claims 1-17, wherein: The thickness of the reinforcement layer is 10%-200% of the thickness of the diaphragm.

25. The MEMS loudspeaker according to claim 24, wherein: The thickness of the reinforcement layer is 20%-50% of the thickness of the diaphragm.

26. The MEMS loudspeaker according to claim 1, wherein: The reinforcing layer is formed by extending inward from the electrical lead-out portion located above the diaphragm.

27. An electronic device comprising a MEMS loudspeaker according to any one of claims 1-26.

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