Semiconductor device and method of forming fan-out wafer level CPO with through-silicon conductive vias

Abstract

Semiconductor devices and methods of forming fan-out wafer level CPOs with through silicon conductive vias are provided. A semiconductor device has a first electrical component with a coupler formed on a first surface of the first electrical component. The first electrical component can be a PIC and the coupler is an optically sensitive region. An encapsulant is deposited over and around the first electrical component. A conductive via is formed through the first electrical component. A transparent coating is disposed over the coupler. A first interconnect structure is formed in a cavity of the encapsulant over the first surface of the first electrical component outside of the coupler. A second interconnect structure is formed over a second surface of the first electrical component. An optical interposer is disposed over the first interconnect structure and the encapsulant, the optical interposer having an optical block disposed over the coupler. A second electrical component is disposed over the optical interposer. A heat sink is disposed over the second electrical component.

Description

Technical Field

[0001] This invention relates generally to semiconductor devices, and more particularly to semiconductor devices and methods for forming fan-out wafer-level CPOs with through-silicon conductive vias. Background Technology

[0002] Semiconductor devices are commonly found in modern electronic products. They perform a wide range of functions, such as signal processing, high-speed computing, transmitting and receiving electromagnetic signals, controlling electronics, optoelectronics, and creating visual images for television displays. Semiconductor devices are used in communications, power conversion, networking, computers, entertainment, and consumer products. They are also found in military applications, aerospace, automotive, industrial controllers, and office equipment.

[0003] Some semiconductor dies utilize couplers to convert one signal into another. For example, photonic integrated circuits (PICs) use optically sensitive areas to convert optical data into electrical signals. PICs must communicate optically with external optical sources and electrically with other semiconductor devices. It would be preferable to build PIC packages at the wafer level to simplify manufacturing processes and reduce manufacturing costs. However, wafer-level PIC integration has always been complex, particularly due to defects caused by the lack of protection for the optically sensitive areas of the semiconductor die. Attached Figure Description

[0004] Figures 1a-1f The illustration shows a semiconductor wafer with multiple semiconductor dies separated by a saw street. Figure 2a-2r The illustration shows the process for forming a fan-out wafer-level CPO with through-molded conductive vias; Figure 3 The illustration shows a CPO with a through-molded conductive via; and Figure 4 The illustration shows a printed circuit board (PCB) with different types of packages disposed on the surface of the PCB. Detailed Implementation

[0005] The present invention is described with reference to the accompanying drawings in one or more embodiments, in which similar numbers denote the same or similar elements. While the invention is described with respect to the best mode for achieving its objectives, those skilled in the art will understand that the invention is intended to cover alternatives, modifications, and equivalents that may be included within the spirit and scope of the invention, defined by the appended claims and their equivalents supported by the following disclosure and the accompanying drawings. The term “semiconductor die” as used herein refers to both the singular and plural forms of the word and can therefore refer to both a single semiconductor device and multiple semiconductor devices.

[0006] Semiconductor devices are generally manufactured using two complex processes: front-end fabrication and back-end fabrication. Front-end fabrication involves the formation of multiple dies on the surface of a semiconductor wafer. Each die on the wafer contains active and passive electrical components that are electrically connected to form a functional electrical circuit. Active electrical components (such as transistors and diodes) have the ability to control the flow of electrical current. Passive electrical components (such as capacitors, inductors, and resistors) create the voltage-current relationship necessary for the electrical circuit to function.

[0007] Back-end manufacturing involves dicing or singulating finished wafers into individual semiconductor dies and packaging these dies for structural support, electrical interconnection, and environmental isolation. To singulate a semiconductor die, the wafer is scored and diced along non-functional regions known as scribes or kerfs. The wafer is diced using a laser cutting tool or saw blade. After dicing, the individual semiconductor dies are placed on a packaging substrate that includes pins or contact pads for interconnection with other system components. Contact pads formed on the semiconductor die are then connected to contact pads within the package. Electrical connections can be made using conductive layers, bumps, pillar bumps, conductive paste, or wire bonding. A sealant or other molding material is deposited on the package to provide physical support and electrical isolation. The finished package is then inserted into an electrical system, making the functionality of the semiconductor device available to other system components.

[0008] Figure 1aA semiconductor wafer 100a with a substrate material 102 is shown, such as silicon, germanium, aluminum phosphide, aluminum arsenide, gallium arsenide, gallium nitride, indium phosphide, silicon carbide, or other bulk materials for structural support. Multiple semiconductor dies or assemblies 104a, separated by non-active inter-die wafer regions or sawtooth 106a, are formed on the wafer 100a. The sawtooth 106a provides dicing areas to cut the semiconductor wafer 100a into individual semiconductor dies 104a. In one embodiment, the semiconductor wafer 100a is circular with a diameter of 100-450 millimeters (mm). The semiconductor wafer 100a can be rectangular or any other geometry.

[0009] Figure 1b A cross-sectional view of a portion of a semiconductor wafer 100a is shown. Each semiconductor die 104a has a back surface or non-active surface 108a and an active layer 110a. The active layer 110a contains analog or digital circuitry, which is implemented as active devices, passive devices, conductive layers, and dielectric layers formed within the die and electrically interconnected according to the die's electrical design and function. For example, the circuitry may include one or more transistors, diodes, and other circuit elements formed within the active layer 110a to implement analog or digital circuitry, such as digital signal processors (DSPs), application-specific integrated circuits (ASICs), memory, or other signal processing circuitry. The semiconductor die 104a may also contain IPDs for RF signal processing, such as inductors, capacitors, and resistors.

[0010] An electrically conductive layer 112 is formed on or within the active layer 110a using PVD, CVD, electroplating, electroless plating, or other suitable metal deposition processes. The conductive layer 112 can be one or more layers of aluminum (Al), copper (Cu), tin (Sn), nickel (Ni), gold (Au), silver (Ag), or other suitable conductive materials. The conductive layer 112 functions as a contact pad or redistribution layer (RDL) electrically connected to the circuitry in the active layer 110a. Depending on the design and function of the semiconductor die 104a within the semiconductor wafer 100a and other electrical components, portions of the conductive layer 112 can be electrically connected or electrically isolated.

[0011] Each semiconductor die 104a further includes a coupler 114. The coupler 114 can have various applications to couple one signal to another or convert one signal to another. In one embodiment, the coupler 114 receives light and converts the light into an electrical signal. In this case, the coupler 114 is a photosensitive area or optical device, and the semiconductor die 104a will be considered a PIC. A conformal protective layer 115 is formed on the active surface 110a and the coupler 114. The protective layer 115 can be a sacrificial mask, photoresist, or epoxy material.

[0012] exist Figure 1c In this process, a saw blade or laser cutting tool 118 is used to cut the semiconductor wafer 100a into individual semiconductor dies 104a through the saw groove 106a. After cutting, the individual semiconductor dies 104a can be inspected and electrically tested for identification of known qualified dies or known qualified units (KGD / KGU).

[0013] In another case, Figure 1d A semiconductor wafer 100b, fabricated similarly to semiconductor wafer 100a, is shown. Multiple semiconductor dies or components 104b, separated by non-active inter-die wafer regions or sawtooth 106b, are formed on wafer 100b. The sawtooth 106b provides dicing areas to cut the semiconductor wafer 100b into individual semiconductor dies 104b. In one embodiment, semiconductor wafer 100b is circular with a diameter of 100-450 mm. Semiconductor wafer 100b can be rectangular or any other geometry.

[0014] Figure 1e A cross-sectional view of a portion of a semiconductor wafer 100b is shown. Each semiconductor die 104b has a back surface or non-active surface 108b and an active layer 110b, which contains analog or digital circuitry implemented as active devices, passive devices, conductive layers, and dielectric layers formed within the die and electrically interconnected according to the die's electrical design and function. For example, the circuitry may include one or more transistors, diodes, and other circuit elements formed within the active layer 110b to implement analog or digital circuitry, such as DSPs, ASICs, memory, or other signal processing circuitry. The semiconductor die 104b may also contain IPDs for RF signal processing, such as inductors, capacitors, and resistors. The semiconductor die 104b may have different electrical functions than the semiconductor die 104a.

[0015] An electrically conductive layer 117 is formed on or within the active layer 110b using PVD, CVD, electroplating, electroless plating, or other suitable metal deposition processes. The conductive layer 117 can be one or more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitable conductive materials. The conductive layer 117 functions as a contact pad or RDL electrically connected to the circuitry in the active layer 110b.

[0016] Electrically conductive bump material is deposited on conductive layer 117 using evaporation, electroplating, electroless plating, drop balling, or screen printing processes. The bump material can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, and combinations thereof, with an optional flux solution. For example, the bump material can be eutectic Sn / Pb, high-lead solder, or lead-free solder. The bump material is bonded to conductive layer 117 using a suitable attachment or bonding process. In one embodiment, the bump material is reflowed to form solder balls or bumps 119 by heating the material above its melting point. In one embodiment, bumps 119 are formed on under-bump metallization (UBM) having a wetting layer, a barrier layer, and an adhesive layer. Bumps 119 can also be compression bonded or thermocompressed bonded to conductive layer 117. Bumps 119 represent a type of interconnect structure that can be formed on conductive layer 117. The interconnect structure can also use bonding wires, conductive paste, column bumps, microbumps, or other electrical interconnects.

[0017] exist Figure 1f In this process, a saw blade or laser cutting tool 118 is used to cut the semiconductor wafer 100b into individual semiconductor dies 104b through the saw groove 106b. After cutting, the individual semiconductor dies 104b can be inspected and electrically tested for KGD / KGU identification.

[0018] Figure 2a-2r The illustration shows the process for forming a fan-out wafer-level co-packaged optical device (CPO) with through-silicon conductive vias. Figure 2aA cross-sectional view of a substrate 120 including a core material 122 is shown. The core material 122 may be such as silicon, germanium, aluminum phosphide, aluminum arsenide, gallium arsenide, gallium nitride, indium phosphide, silicon carbide, or other bulk materials used for structural support. Alternatively, the core material 122 may be a multilayer flexible laminate, ceramic, CCL, or epoxy molding compound. The core material 122 may contain one or more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitable conductive materials. The core material 122 may contain one or more layers of silicon dioxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (SiON), tantalum pentoxide (Ta2O5), aluminum oxide (Al2O3), solder resist, polyimide, benzocyclobutene (BCB), polybenzoxazole (PBO), and other materials with similar insulating and structural properties. Preferably, the core material 122 is glass or metal. The substrate 120 has a main surface 124 and a main surface 126 opposite to surface 124.

[0019] exist Figure 2b In this process, using pick-and-place operations, electrical components 130a-130f are disposed on surface 124 of substrate 120. For example, electrical components 130b and 130e can be discrete electrical devices such as resistors, capacitors, inductors, transistors, or diodes. Electrical components 130b and 130e have terminals 142, which are bonded to conductive vias 204 using solder or conductive paste 140. Electrical components 130a, 130c, 130d, and 130f can be coupled to vias from... Figure 1c The semiconductor die 104a is similar to a PIC, wherein the coupler 114 is oriented away from the surface 124. Alternatively, electrical components 130a, 130c, 130d, and 130f may include other semiconductor dies, semiconductor packages, surface mount devices, discrete electrical devices, or IPDs. Figure 2c Electrical components 130a-130f are shown disposed on surface 124 of substrate 120, wherein coupler 114 faces upward and protective layer 115 provides protection for coupler. Figure 2d It is a top view of the electrical components 130a-130f disposed on the surface 124 of the substrate 120.

[0020] exist Figure 2e In this process, using paste printing, compression molding, transfer molding, liquid sealant molding, vacuum lamination, spin coating, or other suitable coating processes, a sealant or molding compound 150 is deposited on and around electrical components 130a-130f. The sealant 150 can be a polymer composite material, such as a filled epoxy resin, a filled epoxy acrylate, or a polymer with appropriate fillers. The sealant 150 is non-conductive, provides structural support, and environmentally protects the semiconductor device from external elements and contaminants.

[0021] exist Figure 2f In the process, a portion of the sealant is removed by the grinder 154 to flatten the surface 156 of the sealant and expose the protective layer 115. Figure 2g The planarized surface 156 of the sealant 150 and the exposed protective layer 115 are shown.

[0022] exist Figure 2h In this process, the protective layer 115 is removed by laser 157 to expose the coupler 114 and form a molded cavity 158. Alternatively, the protective layer 115 can be removed to expose the coupler 114 and form a molded cavity 158 by chemical etching, chemical mechanical polishing (CMP), mechanical stripping, mechanical grinding, thermal baking, ultraviolet (UV) light, or wet stripping. The active surface 110a in the molded cavity 158 undergoes plasma cleaning.

[0023] exist Figure 2i In the electrical components 130b-130d, a portion of the core material 102 is removed by an etching process or a laser 162 to form an opening 160, which extends from surface 156 through the core material to surface 124. Figure 2j In this process, using PVD, CVD, electroplating, electroless plating, or other suitable metal deposition processes, conductive material is formed within the opening 160 to form a through-silicon conductive via 166. The conductive via 166 can be one or more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitable conductive materials.

[0024] exist Figure 2kIn this configuration, interconnect structures 170a-170d are formed above the active surface 110a of electrical components 130a, 130c, 130d, and 130f, outside the area or occupied region of coupler 114. Each interconnect structure 170a-170d includes one or more conductive layers 172 and one or more insulating layers 174. The conductive layer 172 can be one or more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitable conductive materials. The conductive layer 172 can be formed using PVD, CVD, electroplating, electroless plating processes, or other suitable metal deposition processes. The conductive layer 172 provides horizontal electrical interconnects (such as RDLs) and vertical electrical interconnects. Depending on the design and function of electrical components 130a-130f and other electrical components, portions of the conductive layer 172 can be electrically connected or electrically isolated. Insulating layer 174 comprises one or more layers of SiO2, Si3N4, SiON, Ta2O5, Al2O3, solder resist, polyimide, BCB, PBO, and other materials with similar insulating and structural properties. Insulating layer 174 can be formed using PVD, CVD, printing, lamination, spin coating, spraying, sintering, or thermal oxidation. Insulating layer 174 provides isolation between conductive layers 172. Multiple conductive layers (e.g., 172) separated by insulating layer 174 may exist.

[0025] An electrically conductive layer 176 is formed on the sealant 150 and interconnect structures 170a-170d using PVD, CVD, electroplating, electroless plating, or other suitable metal deposition processes. The conductive layer 176 can be one or more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitable conductive materials. The conductive layer 176 provides electrical connection to the conductive vias 166 and interconnect structures 170a-170d. A transparent coating 178 is deposited on the coupler 114. The transparent coating 178 can be an adhesive or epoxy material and provides protection for the coupler 114.

[0026] exist Figure 2l In this process, a temporary substrate or carrier 180 is disposed on a sealant 150, interconnect structures 170a-170d, a conductive layer 176, and a transparent coating 178 using an interface material. The carrier 180 can be a sacrificial substrate material, such as silicon, a polymer, beryllium oxide, glass, or other suitable low-cost rigid material for curing and structural support. The interface material 182 can be a polymer, epoxy material, acrylic B-stage material, photoresist, or other similar material.

[0027] exist Figure 2mIn this configuration, interconnect structures 190 are formed on the back surface 108a and sealant 150 of electrical components 130a, 130c, 130d, and 130f. Interconnect structures 190 include one or more conductive layers 192 and one or more insulating layers 194. Conductive layers 192 can be one or more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitable conductive materials. Conductive layers 192 can be formed using PVD, CVD, electroplating, electroless plating processes, or other suitable metal deposition processes. Conductive layers 192 provide horizontal electrical interconnects (such as RDLs) and vertical electrical interconnects. Depending on the design and function of electrical components 130a-130f and other electrical components, portions of conductive layers 192 can be electrically connected or electrically isolated. Insulating layers 194 comprise one or more layers of SiO2, Si3N4, SiON, Ta2O5, Al2O3, solder resist, polyimide, BCB, PBO, and other materials with similar insulating and structural properties. Insulating layer 194 can be formed using PVD, CVD, printing, lamination, spin coating, spraying, sintering, or thermal oxidation. Insulating layer 194 provides isolation between conductive layers 192. Multiple conductive layers (such as 192) separated by insulating layer 194 may exist.

[0028] exist Figure 2n In this process, the carrier 180 and interface material 182 are removed through chemical etching, CMP, mechanical stripping, mechanical polishing, thermal baking, UV light, or wet stripping to expose the interconnect structures 170a-170d, the conductive layer 176, and the transparent coating 178. Figure 2n The assembly shown in the figure constitutes a wafer-level PIC package 198.

[0029] exist Figure 2o In this embodiment, a wafer-level PIC package 198 is inverted, and an optical interposer 200 is disposed on interconnect structures 170a-170d, a conductive layer 176, and a transparent coating 178. The optical interposer 200 has an insulating material 202, conductive vias 204, and an optical block 206. In one embodiment, the insulating material 202 is glass. The optical interposer 200 may have the conductive vias 204 pre-formed, and chip-on-wafer-on-substrate (CoWoS) stacking integration using multiple mating electrical components 130a-130f is employed. The optical interposer 200 uses the optical block 206 to perform dimensional fiber coupling without vertical or horizontal coupling. The conductive vias 204 are electrically connected to the interconnect structures 170a-170d and the conductive layer 176 via bumps 208. The optical block 206 is disposed on the transparent coating 178 and the coupler 114 and operates as a waveguide.

[0030] exist Figure 2p In, with Figure 2bSimilarly, using pick-and-place operations, electrical components 210a-210h are mounted on the optical interposer 200. For example, electrical components 210a and 210e can be discrete electrical devices such as resistors, capacitors, inductors, transistors, or diodes. Electrical components 210a and 210e have terminals 214, which are bonded to conductive vias 204 using solder or conductive paste 212. Electrical components 210b-210d and 210f-210h can be connected to... Figure 1f Similar to semiconductor die 104b, the bumps 119 are oriented toward optical interposer 200. Alternatively, electrical components 210b-210d and 210f-210h may include other semiconductor dies, semiconductor packages, surface mount devices, discrete electrical devices, or IPDs.

[0031] exist Figure 2q In this configuration, a heat sink or heat plate 220 is joined to electrical components 210b-210d and 210f-210h using a thermal interface material 222. The heat sink 220 is a block of solid material, such as steel, aluminum, copper, their alloys, or another thermally conductive material. Depending on the height of the electrical components 210b-210d and 210f-210h, spacers 224 provide additional height if necessary. Figure 2q The assembly in the package is a fan-out wafer-level co-packaged optical device package, part of which is electrically interconnected with through-hole molded conductive vias. Figure 2r In the process, a saw blade or laser cutting tool 230 is used to cut the assembly into individual CPO packages 240a and 240b.

[0032] Figure 3A CPO package 240a is shown, which includes interconnect structures 190, electrical components 130a-130b, sealant 150, conductive vias 166, interconnect structures 170a-170b, an optical interposer 200, electrical components 210a-210d, and a heat sink 220. An optical connector 232 receives data from an optical cable 234 and transmits light-based information through the optical interposer 200, optical block 206, and clear coating 178 to a coupler 114. The CPO package 240 is coupled to a substrate 238 via bumps 236. Similar to interconnect structure 190, substrate 238 may be a PCB with one or more conductive layers and one or more insulating layers. Coupler 114 converts optical data into electrical signals. Electrical components 130a-130b process the electrical signals and communicate with electrical components 210a-210d through interconnect structures 170a-170b, conductive layer 176, and conductive vias 204. Electrical components 130a-130b further communicate with the substrate 238 through the conductive via 166, interconnect structure 190, and bump 236. The CPO package 240 includes multiple electrical components 130a-130b that implement the PIC and communicate through the optical interposer 200 and through the molded conductive via 166. In the CPO package 240, the coupler 114 is protected facing upwards. Interconnect structures 170a-170d are formed in the molded cavity 158. A heat sink 220 is stacked on top of the electrical components 210a-210d for heat dissipation of the CPO package 240.

[0033] Figure 4 The illustration shows an electrical device 400 having a chip carrier substrate or PCB 402 with multiple semiconductor packages disposed on the surface of the PCB 402, including a CPO package 240a. Depending on the application, the electrical device 400 may have one type of semiconductor package or multiple types of semiconductor packages.

[0034] Electrical device 400 can be a standalone system that uses a semiconductor package to perform one or more electrical functions. Alternatively, electrical device 400 can be a sub-component of a larger system. For example, electrical device 400 can be part of a tablet computer, cellular phone, digital camera, communication system, or other electrical device. Alternatively, electrical device 400 can be a graphics card, network interface card, or other signal processing card that can be plugged into a computer. Semiconductor packages can include microprocessors, memory, ASICs, logic circuits, analog circuits, RF circuits, discrete devices, or other semiconductor dies or electrical components. Miniaturization and weight reduction are essential for products to gain market acceptance. The spacing between semiconductor devices can be reduced to achieve higher density.

[0035] exist Figure 4 In this PCB 402, a common substrate is provided for the structural support and electrical interconnection of semiconductor packages mounted on the PCB. Conductive signal traces 404 are formed on the surface of PCB 402 or within its layers using evaporation, electroplating, electroless plating, screen printing, or other suitable metal deposition processes. Signal traces 404 provide electrical communication between each semiconductor package, mount assembly, and other external system components. Trace 404 also provides power and ground connections for each semiconductor package.

[0036] In some embodiments, the semiconductor device has two packaging levels. The first-level packaging is a technique for mechanically and electrically attaching the semiconductor die to an intermediate substrate. The second-level packaging involves mechanically and electrically attaching the intermediate substrate to a PCB. In other embodiments, the semiconductor device may have a first-level package in which the die is mechanically and electrically disposed directly on the PCB.

[0037] For illustrative purposes, several types of first-level packages (including bonding wire package 406 and flip chip 408) are shown on PCB 402. Additionally, several types of second-level packages are shown disposed on PCB 402, including Ball Grid Array (BGA) 410, Bump Chip Carrier (BCC) 412, Planar Grid Array (LGA) 416, Multi-Chip Module (MCM) or SIP Module 418, Quadrature Flat No-Leader Package (QFN) 420, Quadrature Flat Package 422, Embedded Wafer-Level Ball Grid Array (eWLB) 424, and Wafer-Level Chip-Scale Package (WLCSP) 426. In one embodiment, eWLB 424 is a fan-out wafer-level package (Fo-WLP) and WLCSP 426 is a fan-in wafer-level package (Fi-WLP). Depending on system requirements, any combination of semiconductor packages (configured with any combination of first and second-level package styles) and other electrical components may be connected to PCB 402. In some embodiments, electrical device 400 includes a single attached semiconductor package, while other embodiments require multiple interconnected packages. By combining one or more semiconductor packages on a single substrate, manufacturers can incorporate pre-fabricated components into electrical devices and systems. Because semiconductor packages include sophisticated functionality, electrical devices can be manufactured using less expensive components and streamlined manufacturing processes. The resulting devices are less likely to fail and less expensive to manufacture, resulting in lower costs for consumers.

[0038] While one or more embodiments of the present invention have been illustrated in detail, those skilled in the art will understand that modifications and alterations may be made to those embodiments without departing from the scope of the invention as set forth in the following claims.

Claims

1. A semiconductor device, comprising: A first electrical component includes a coupler formed on a first surface of the first electrical component; A sealant is deposited on and around the first electrical component; A conductive via is formed, penetrating the first electrical component; A first interconnection structure is formed within the cavity of the sealant above the first surface of the first electrical component, outside the coupler; as well as A second interconnect structure is formed on a second surface of the first electrical component, which is opposite to the first surface of the first electrical component.

2. The semiconductor device of claim 1, further comprising a transparent coating disposed on the coupler.

3. The semiconductor device of claim 1, further comprising an optical interposer disposed on the first interconnect structure and the sealant, the optical interposer having an optical block disposed on the coupler.

4. The semiconductor device of claim 3, further comprising a second electrical component disposed on the optical interposer.

5. The semiconductor device of claim 4, further comprising a heat sink disposed on the second electrical component.

6. A semiconductor device, comprising: A first electrical component includes a coupler formed on a first surface of the first electrical component; A sealant is deposited around the first electrical component; A conductive via is formed, penetrating the first electrical component; A first interconnection structure is formed on the first surface of the first electrical component outside the coupler; as well as A second interconnect structure is formed on a second surface of the first electrical component, which is opposite to the first surface of the first electrical component.

7. The semiconductor device of claim 6, wherein the coupler includes an optically sensitive region.

8. The semiconductor device of claim 6, further comprising a transparent coating disposed on the coupler.

9. The semiconductor device of claim 6, further comprising an optical interposer disposed on the first interconnect structure and the sealant, the optical interposer having an optical block disposed on the coupler.

10. The semiconductor device of claim 9, further comprising a second electrical component disposed on the optical interposer.

11. A method for manufacturing a semiconductor device, comprising: A first electrical component is provided, the first electrical component including a coupler formed on a first surface of the first electrical component; A sealant is deposited on and around the first electrical component; A conductive via is formed through the first electrical component; A cavity is formed in the sealant above the first surface of the first electrical component; A first interconnect structure is formed within the cavity of the sealant above the first surface of the first electrical component, outside the coupler; as well as A second interconnect structure is formed on the second surface of the first electrical component, which is opposite to the first surface of the first electrical component.

12. The method of claim 11, further comprising providing a transparent coating on the coupler.

13. The method of claim 11, further comprising providing an optical interposer plate on the first interconnect structure and the sealant, the optical interposer plate having an optical block disposed on the coupler.

14. The method of claim 13, further comprising providing a second electrical component on the optical interposer plate.

15. The method of claim 14, further comprising providing a heat sink on the second electrical component.

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