LED chip assembly, manufacturing method, peeling method, display panel and device

Abstract

The application relates to an LED chip assembly, a manufacturing method, a peeling method, a display panel and a device. The manufacturing method comprises the following steps: providing an epitaxial wafer, patterning a functional layer to form a plurality of independent LED epitaxial structures on a substrate; evaporating a first ohmic metal layer and a second ohmic metal layer on each LED epitaxial structure, the first ohmic metal layer forms ohmic contact with a first semiconductor layer, and the second ohmic metal layer forms ohmic contact with a second semiconductor layer; depositing a passivation layer on the epitaxial wafer, so that the passivation layer covers the LED epitaxial structures; opening a hole in the passivation layer to expose the first ohmic metal layer and the second ohmic metal layer; forming a mask layer on the passivation layer, and etching the mask layer to remove the sacrificial layer at the channel and expose the substrate. The application can effectively reduce the passivation layer debris generated during LED laser peeling.

Description

Technical Field

[0001] This invention relates to the field of LED chip technology, and in particular to an LED chip assembly, manufacturing method, stripping method, display panel, and device. Background Technology

[0002] Micro LED, also known as Mini LED, is a type of LED whose size has been reduced from millimeters to micro-nanoscale compared to traditional LEDs. When integrated into high-density, small-sized arrays and applied to the display field, it has advantages such as high brightness, high resolution, high contrast, low energy consumption, and long lifespan. It also has excellent performance in terms of response speed and thermal stability.

[0003] Fabricating MicroLED arrays first requires growing semiconductor materials on substrates such as sapphire, single-crystal gallium nitride, silicon carbide, and gallium arsenide. Individual light-emitting units are then formed using semiconductor processes. These units are subsequently peeled off the substrate and transferred to a suitable transfer substrate. Methods for peeling the light-emitting units from the substrate include chemical peeling, mechanical peeling, thermal peeling, and laser peeling. Laser peeling technology utilizes the difference in laser absorption between the semiconductor material and the substrate, and the characteristic that some semiconductor materials can decompose upon absorbing laser light, to achieve the peeling purpose. Compared to other methods, laser peeling technology is highly efficient, pollution-free, causes minimal device damage, and has a high yield, thus better meeting the requirements of industrial production.

[0004] However, during the process of peeling MicroLEDs from the substrate, a large amount of PV debris is generated because the passivation layer (PV) deposited on the sapphire in the extended area of ​​the MicroLED chip cannot be dissociated, which affects the yield of subsequent processes. Summary of the Invention

[0005] In view of the shortcomings of the prior art, the purpose of this application is to provide an LED chip component, manufacturing method, peeling method, display panel and device, which aims to solve the problem that a large number of passivation layer debris are left after MicroLED laser peeling, which affects the yield of subsequent processes.

[0006] In a first aspect, this application provides a method for manufacturing an LED chip assembly, comprising:

[0007] An epitaxial wafer is provided, the epitaxial wafer comprising a substrate, and a sacrificial layer and a functional layer sequentially stacked on the substrate;

[0008] The functional layer is patterned to form a plurality of LED epitaxial structures on the substrate, and the channel between adjacent LED epitaxial structures exposes the sacrificial layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer stacked sequentially, wherein the first semiconductor layer is disposed on the sacrificial layer.

[0009] A first ohmic metal layer and a second ohmic metal layer are deposited on each of the LED epitaxial structures, wherein the first ohmic metal layer forms an ohmic contact with the first semiconductor layer, and the second ohmic metal layer forms an ohmic contact with the second semiconductor layer;

[0010] A passivation layer is deposited on the epitaxial wafer to cover the LED epitaxial structure;

[0011] An opening is made in the passivation layer to expose the first ohmic metal layer and the second ohmic metal layer;

[0012] A mask layer is formed on the passivation layer, and the mask layer is etched to remove the sacrificial layer at the channel and expose the substrate.

[0013] In this embodiment, the sacrificial layer is left unetched during patterning. Instead, the mask layer and the sacrificial layer are etched simultaneously after the passivation layer is deposited to remove the sacrificial layer between adjacent LED epitaxial structures and expose the substrate. This ensures that there is no sacrificial layer in the chip expansion area, which can effectively reduce PV debris and improve product quality when the LED chips in the LED chip assembly are subsequently stripped.

[0014] In one alternative embodiment, after forming a mask layer on the passivation layer, etching the mask layer to remove the sacrificial layer at the trench and expose the substrate, the method further includes:

[0015] Remove the mask layer;

[0016] Metal electrodes are deposited on the exposed first and second ohmic metal layers.

[0017] In one alternative implementation, etching the mask layer to remove the sacrificial layer at the trench and expose the substrate includes:

[0018] The mask layer located between adjacent LED epitaxial structures is etched with openings to remove the sacrificial layer at the channel and expose the substrate.

[0019] In one alternative embodiment, the material of the sacrificial layer includes one or more of gallium nitride, BCB adhesive, and silicon carbide.

[0020] Secondly, based on the same inventive concept, this application also provides an LED chip assembly, manufactured using the LED chip assembly manufacturing method described in any one of the first aspects.

[0021] In one alternative embodiment, a sacrificial layer is further disposed between each of the LED epitaxial structures and the substrate.

[0022] Thirdly, based on the same inventive concept, this application also provides a method for stripping LED chips, including:

[0023] Provide LED chip components as described in the second aspect;

[0024] Provide a substrate;

[0025] The LED chip assembly is positioned correspondingly to the substrate;

[0026] The sacrificial layer is irradiated with a laser, causing it to decompose so that the irradiated LED chip on the LED chip assembly is transferred to the substrate.

[0027] The area of ​​the light spot is larger than the area of ​​the LED chip projected onto the sacrificial layer, and the area of ​​the light spot is the area covered by the laser-irradiated light spot on the sacrificial layer.

[0028] Fourthly, based on the same inventive concept, this application also provides a display panel, comprising:

[0029] Multiple LED chips obtained by using the LED chip stripping method described in the third aspect;

[0030] A driving substrate, on which multiple LED chips are disposed and electrically connected, the driving substrate is used to transmit electrical signals to the multiple LED chips to control the multiple LED chips to emit light.

[0031] Fifthly, based on the same inventive concept, this application also provides a display device, including: a display panel as described in the fourth aspect. Attached Figure Description

[0032] Figure 1 This is a schematic diagram of the structure of a traditional laser-driven LED chip stripping process.

[0033] Figure 2 This is a schematic diagram of the experimental results after traditional laser stripping of LED chips.

[0034] Figure 3 This is a schematic diagram of an LED chip assembly manufacturing method provided in an embodiment of this application;

[0035] Figure 4 for Figure 3 A schematic diagram of the functional layer patterning process in the LED chip component manufacturing method shown;

[0036] Figure 5 A schematic diagram of the process structure for forming an ohmic metal layer in the LED chip assembly fabrication method provided in this application embodiment;

[0037] Figure 6 This is a schematic diagram of the structure after depositing a passivation layer in an LED chip assembly fabrication method provided in this application embodiment;

[0038] Figure 7 This is a schematic diagram of the structure after opening a hole in the passivation layer in an LED chip assembly manufacturing method provided in an embodiment of this application;

[0039] Figure 8 This is a schematic diagram of the process of depositing a mask layer and exposing the substrate between the LED epitaxial structures in an LED chip assembly fabrication method provided in this application embodiment;

[0040] Figure 9 This is a schematic diagram of the process of removing the mask layer and forming electrodes in an LED chip assembly manufacturing method provided in this application embodiment;

[0041] Figure 10 This is a schematic diagram of an LED chip assembly structure provided in an embodiment of this application;

[0042] Figure 11 This application provides a schematic flowchart of an LED chip stripping method;

[0043] Figure 12 This is a schematic diagram of the substrate removal process in an LED chip removal method provided in this application embodiment;

[0044] Figure 13 This is a schematic diagram of the product structure after the substrate is removed using an LED chip stripping method provided in this application embodiment.

[0045] Figure reference numerals: 10-substrate; 11-sacrificial layer; 20-functional layer; 21-LED epitaxial structure; 30-passivation layer; 31-first ohmic metal layer; 33-second ohmic metal layer; 40-mask layer; 51-electrode. Detailed Implementation

[0046] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0047] This invention discloses many different embodiments or examples for implementing different structures of the invention. To simplify the disclosure, specific examples of components and arrangements are described herein. These are merely examples and are not intended to limit the invention. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, examples of various specific processes and materials are provided in this invention, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0048] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. Generally, terms can be understood at least in part according to their usage in accordance with the invention. For example, the term "one or more" as used herein, depending at least in part on the invention, can be used to describe any component, structure, or feature in the singular or in the plural form to describe a combination of components, structures, or features. Similarly, terms such as "a," "an," or "the" can also be understood, depending at least in part on the invention, to convey either a singular or a plural usage. Furthermore, the term "based on..." can be understood not necessarily to convey an exclusive set of factors, but rather, depending at least in part on the invention, can alternatively allow for additional factors that do not necessarily have to be explicitly described.

[0049] It should be readily understood that the meanings of “on,” “above,” and “on top of” in this invention should be interpreted in the broadest sense, such that “on” means not only “directly on something,” but also “on something” including the presence of an intermediate component or layer between the two, and “on something” or “above something” means not only “on something” or “above something,” but also “on something” or “above something” where no intermediate component or layer between the two exists.

[0050] Furthermore, for ease of description, spatial relative terms such as "below," "under," "lower," "above," and "upper" may be used in this invention to describe the relationship of one element or component to another element or component shown in the accompanying drawings. In addition to the orientations described in the figures, the spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways, rotated 90°, or otherwise oriented, and the spatial relative descriptive terms used in this invention can be interpreted accordingly.

[0051] As used in this invention, the term "layer" refers to a portion of material comprising a region of a certain thickness. A layer may extend over the entire lower or upper layer structure, or may have a extent smaller than that of the lower or upper layer structure. Furthermore, a layer may be a region of a homogeneous or heterogeneous continuous structure with a thickness less than the thickness of the continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or between any pair of horizontal planes therebetween. A layer may extend horizontally, vertically, and / or along a tapered surface. A substrate may be a single layer, which may include one or more layers, and / or may have one or more layers on, above, and / or below it. A single layer may include multiple layers. For example, a semiconductor layer may include one or more doped or undoped semiconductor layers, and may have the same or different materials.

[0052] refer to Figure 1 This is a schematic diagram of the traditional laser-based LED chip removal process. Figure 1 As shown, the LED chip includes an LED epitaxial structure 21, a passivation layer 30, and an electrode 51; the LED chip is disposed on a substrate. During LED chip fabrication, to ensure the passivation layer completely covers the LED chip sidewalls and to address etching equipment precision issues, after depositing the passivation layer, partial etching of the passivation layer on the channel results in the passivation layer near the LED sidewall directly covering the substrate. During laser lift-off of the LED chip, the laser decomposes the gallium nitride (sacrificial layer) at the interface between the LED epitaxial structure and the substrate, generating an impact force that causes the LED chip to detach from the substrate. During this process, because the passivation layer near the LED sidewall directly covers the substrate, a tensile force is generated between the passivation layer on the LED chip and the passivation layer covering the substrate, causing partial breakage of the passivation layer and generating a large amount of passivation layer debris, such as… Figure 2 As shown in the diagram, the shedding of passivation layer debris can affect the yield of subsequent processes.

[0053] Therefore, this application aims to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in subsequent embodiments.

[0054] refer to Figure 3 This is a schematic flowchart of an LED chip assembly manufacturing method provided in an embodiment of this application. The method includes:

[0055] 101: An epitaxial wafer is provided, the epitaxial wafer including a substrate, and a sacrificial layer and a functional layer sequentially stacked on the substrate.

[0056] In this embodiment, the functional layer constitutes the main epitaxial layer structure of the LED. The functional layer may include an active layer of a first semiconductor layer and a second semiconductor layer stacked sequentially on the sacrificial layer, wherein the first semiconductor layer and the second semiconductor layer are doped semiconductor layers of different types.

[0057] The first semiconductor layer can be an N-doped semiconductor layer or a P-doped semiconductor layer, and the second semiconductor layer can be a P-doped semiconductor layer or an N-doped semiconductor layer. The active layer can be a multiple quantum well (MQW) structure. Specifically, the semiconductor layer can be a III-V group compound semiconductor material such as GaN, AlGaN, InGaN, AlInP, GaInP, or AlGaInP; the quantum well or quantum layer can be InGaN, AlGaN, InN, InAlN, or AlInGaN; and the quantum barrier alternately stacked with the quantum well layer can be GaN, AlN, AlGaN, AlInGaN, or InAlN; the multiple quantum well structure can include one, two, three, four, five, six, seven, or eight quantum wells (or at least one quantum hole); the wavelength emitted by the active layer can be a wavelength in the blue light band, a wavelength in the green light band, or a wavelength in the red light band. This application does not specifically limit the specific wavelength emitted by the active layer.

[0058] In the embodiments of this application, the substrate can be a growth substrate or a temporary substrate. For example, the epitaxial wafer can be a GaN-based blue-green light epitaxial wafer, with a sapphire growth substrate, a U-type GaN sacrificial layer, and a functional layer comprising a sequentially stacked N-type GaN layer, an active layer, and a P-type GaN layer. As another example, the epitaxial wafer can be a red light epitaxial wafer based on aluminum indium phosphide (AIP), with a sapphire temporary substrate, a BCB adhesive, GaN, or silicon carbide sacrificial layer, and a functional layer comprising a sequentially stacked P-type AlInP (or AlGaInP) layer, an active layer, and an N-type AlInP (or AlGaInP) layer.

[0059] It is understood that regardless of whether the above functional layer corresponds to blue-green light or red light, the above substrate can be a temporary substrate, and this application does not limit it.

[0060] In the embodiments of this application, the sacrificial layer is made of a material that can be decomposed by light irradiation, thereby causing the functional layer to detach from the substrate; for example, the material of the sacrificial layer includes one or more of gallium nitride, BCB adhesive, ultraviolet adhesive, and silicon carbide.

[0061] 102: Pattern the functional layer to form a plurality of LED epitaxial structures on the substrate, such that the channel between adjacent LED epitaxial structures exposes the sacrificial layer.

[0062] The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially, wherein the first semiconductor layer is disposed on the sacrificial layer.

[0063] It should be noted that the above-mentioned patterning refers to forming a predetermined pattern shape into the layer structure through multiple photolithography, etching, and other processes. After the functional layer 20 is patterned, multiple independent LED epitaxial structures 21 are formed. Each LED epitaxial structure 21 is separated from each other. The original functional layers between adjacent LED epitaxial structures 21 are removed to form channels, and a sacrificial layer 11 is exposed on the channels, such as... Figure 4 As shown.

[0064] The layer structure of the LED epitaxial structure is the same as that of the functional layer, both including the main epitaxial layer structure of the LED: the first semiconductor layer, the active layer, and the second semiconductor layer.

[0065] 103: A first ohmic metal layer and a second ohmic metal layer are deposited on each of the aforementioned LED epitaxial structures.

[0066] The first ohmic metal layer forms an ohmic contact with the first semiconductor layer, and the second ohmic metal layer forms an ohmic contact with the second semiconductor layer.

[0067] Optionally, the first ohmic metal layer may be an ITO transparent conductive layer.

[0068] For example, such as Figure 5 As shown, a first ohmic metal layer 31 and a second ohmic metal layer 33 are formed on the LED epitaxial structure.

[0069] It should be noted that the specific process of forming the first ohmic metal layer 31 and the second ohmic metal layer 33 is not described in detail in this application. The ohmic metal layers can be deposited one by one through multiple masking or etching processes.

[0070] 104: Deposit a passivation layer on the epitaxial wafer to cover the LED epitaxial structure.

[0071] In this embodiment, the passivation layer covers the surface of the LED epitaxial structure to protect it. The passivation layer can be one or more of Al2O3, AlN, SiN, SiO2, and AlON thin films.

[0072] For example, such as Figure 6 As shown, the passivation layer 30 covers each LED epitaxial structure on the substrate.

[0073] 105: An opening is made in the passivation layer to expose the first ohmic metal layer and the second ohmic metal layer.

[0074] In this embodiment, after depositing the passivation layer 30, the passivation layer on the first ohmic metal layer and the second ohmic metal layer can be removed by etching openings to partially expose the first ohmic metal layer and the second ohmic metal layer, such as... Figure 7 As shown.

[0075] 106: A mask layer is formed on the passivation layer, and the mask layer is etched to remove the sacrificial layer at the channel and expose the substrate.

[0076] In one implementation, step 106 includes: creating openings in the mask layer located between adjacent LED epitaxial structures to remove the sacrificial layer at the channel and expose the substrate.

[0077] Optionally, the aperture of the opening in the mask layer located between adjacent LED epitaxial structures is smaller than the length of the channel between adjacent LED epitaxial structures.

[0078] Optionally, the material of the mask layer can be photoresist or other mask materials, without specific limitations.

[0079] For example, such as Figure 8 As shown, in Figure 7 On the basis of filling the mask material to form a mask layer 40, the sacrificial layer 11 at the channel between adjacent LED epitaxial structures is removed by etching, thereby exposing the substrate 10 at the channel.

[0080] In an alternative implementation, after step 106, the method further includes: removing the mask layer; depositing a metal electrode 51 onto the exposed first and second ohmic metal layers, for example, as... Figure 9 As shown.

[0081] refer to Figure 10 Based on the same inventive concept, this application also provides an LED chip assembly manufactured using the LED chip assembly fabrication method described above. The LED chip assembly includes: a substrate 10; a plurality of LED epitaxial structures 21 are spaced apart on the substrate 10; a passivation layer 30 is covered on the surface of each LED epitaxial structure 21; an electrode hole is provided on the passivation layer 30, and an electrode 51 is provided in the electrode hole, and the electrode 51 is connected to the LED epitaxial structure 21.

[0082] Optionally, a sacrificial layer 11 is further provided between each of the LED epitaxial structures 21 and the substrate 10, while the sacrificial layer 11 is not provided in the channel between adjacent LED epitaxial structures 21.

[0083] In this embodiment, the sacrificial layer 11 is made of a material that can be decomposed by light irradiation, thereby causing the LED epitaxial structure to detach from the substrate; for example, the material of the sacrificial layer includes one or more of gallium nitride, BCB adhesive, ultraviolet adhesive, and silicon carbide.

[0084] It should be noted that the specific structure and process of the LED chip assembly can be referred to the description of the above method embodiments, and will not be repeated here.

[0085] refer to Figure 11 This is a schematic diagram of an LED chip stripping method provided in this application. The method includes:

[0086] 201: Provide LED chip components.

[0087] In the embodiments of this application, the LED chip component described above is the LED chip component described in any of the foregoing embodiments. The specific manufacturing process is described in the above method embodiments and will not be repeated here.

[0088] 202: Provide a substrate.

[0089] In this embodiment, the substrate includes a temporary substrate or a driving backplane.

[0090] 203: The LED chip assembly is set up correspondingly to the substrate.

[0091] 204: The sacrificial layer is irradiated with a laser, causing it to decompose so that the irradiated LED chip on the LED chip assembly is transferred to the substrate.

[0092] The area of ​​the light spot is larger than the area of ​​the LED chip projected onto the sacrificial layer, and the area of ​​the light spot is the area covered by the laser-irradiated light spot on the sacrificial layer.

[0093] refer to Figure 12This is a schematic diagram of the process structure of an LED chip stripping method provided in this application embodiment. First, an LED chip assembly and a substrate as described in the previous embodiment are provided. Then, the substrate and the LED chip assembly are positioned opposite each other. Next, a laser is used to irradiate the sacrificial layer (taking U-shaped GaN as an example) at the location corresponding to the LED chip to be stripped. The area of ​​the laser spot irradiating the sacrificial layer is larger than the area projected onto the sacrificial layer by the LED chip. After being irradiated by the laser, the sacrificial layer decomposes into N2 and metallic Ga. Under the impact force of the generated N2, the LED chip detaches from the substrate and transfers to the substrate. Specifically, by retaining the sacrificial layer during patterning without etching, and instead simultaneously etching the mask layer and the sacrificial layer after depositing the passivation layer, the substrate between the channels is exposed, ensuring that the chip's outer region is entirely GaN. During laser stripping, GaN dissociates from the sapphire, and no PV debris is generated. The experimental results are as follows: Figure 13 As shown.

[0094] It should be noted that the decomposition of the sacrificial layer under normal conditions does not refer to the complete decomposition of the entire layer, but rather to the decomposition of the interface between the sacrificial layer and the substrate, so as to allow the substrate to detach from the LED chip. Of course, in some specific cases, whether the sacrificial layer can be completely decomposed depends mainly on its thickness, which will not be specifically limited here.

[0095] Based on the same inventive concept, this application also provides a display panel, including:

[0096] Multiple LED chips obtained using the LED chip stripping method described above;

[0097] A driving substrate, on which multiple LED chips are disposed and electrically connected, the driving substrate is used to transmit electrical signals to the multiple LED chips to control the multiple LED chips to emit light.

[0098] Based on the same inventive concept, this application also provides a display device, including: a display panel as described above.

[0099] Alternatively, the display device can be AR glasses, VR device, smartwatch, TV, monitor, etc.

[0100] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A method for manufacturing an LED chip assembly, characterized in that, include: An epitaxial wafer is provided, the epitaxial wafer comprising a substrate, and a sacrificial layer and a functional layer sequentially stacked on the substrate; The functional layer is patterned to form a plurality of LED epitaxial structures on the substrate, and the channel between adjacent LED epitaxial structures exposes the sacrificial layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer stacked sequentially, wherein the first semiconductor layer is disposed on the sacrificial layer. A first ohmic metal layer and a second ohmic metal layer are deposited on each of the LED epitaxial structures, wherein the first ohmic metal layer forms an ohmic contact with the first semiconductor layer, and the second ohmic metal layer forms an ohmic contact with the second semiconductor layer; A passivation layer is deposited on the epitaxial wafer to cover the LED epitaxial structure; An opening is made in the passivation layer to expose the first ohmic metal layer and the second ohmic metal layer; A mask layer is formed on the passivation layer, and the mask layer is etched to remove the sacrificial layer at the channel and expose the substrate.

2. The method for manufacturing an LED chip assembly as described in claim 1, characterized in that, After forming a mask layer on the passivation layer, etching the mask layer to remove the sacrificial layer at the trench and expose the substrate, the method further includes: Remove the mask layer; Metal electrodes are deposited on the exposed first and second ohmic metal layers.

3. The method for manufacturing an LED chip assembly as described in claim 1, characterized in that, The etching of the mask layer to remove the sacrificial layer at the trench and expose the substrate includes: The mask layer located between adjacent LED epitaxial structures is etched with openings to remove the sacrificial layer at the channel and expose the substrate.

4. The method for manufacturing an LED chip assembly as described in claim 3, characterized in that, The material of the sacrificial layer includes one or more of gallium nitride, BCB adhesive, and silicon carbide.

5. An LED chip assembly, characterized in that, It is manufactured using the LED chip assembly manufacturing method as described in any one of claims 1-4.

6. The LED chip assembly as described in claim 5, characterized in that, A sacrificial layer is also provided between each of the LED epitaxial structures and the substrate.

7. A method for stripping LED chips, characterized in that, include: Provide the LED chip assembly as described in claim 6; Provide a substrate; The LED chip assembly is positioned correspondingly to the substrate; The sacrificial layer is irradiated with a laser, causing it to decompose so that the irradiated LED chip on the LED chip assembly is transferred to the substrate. The area of ​​the light spot is larger than the area of ​​the LED chip projected onto the sacrificial layer, and the area of ​​the light spot is the area covered by the laser-irradiated light spot on the sacrificial layer.

8. A display panel, characterized in that, include: Multiple LED chips obtained by the LED chip stripping method as described in claim 7; A driving substrate, on which multiple LED chips are disposed and electrically connected, the driving substrate is used to transmit electrical signals to the multiple LED chips to control the multiple LED chips to emit light.

9. A display device, characterized in that, include: The display panel as described in claim 8.

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