Highly reliable micro-led integrated device

Abstract

The application discloses a high-reliability Micro-LED integrated device, relates to the technical field of Micro-LED display and optical interconnection, and comprises a CMOS driving chip, a Micro-LED light-emitting chip and an integrated cover plate. The Micro-LED light-emitting chip is provided with a plurality of Micro-LED chip units and a parallel conductive layer located at the light-emitting side of the Micro-LED chip units; the integrated cover plate is arranged at the side, away from the Micro-LED chip units, of the parallel conductive layer and comprises a transparent substrate, a bottom electrode, a top electrode and a conductive through hole. The bottom electrode is electrically connected with the interface electrode of the CMOS driving chip, the top electrode is connected with an external circuit wiring terminal, and the conductive through hole electrically connects the bottom electrode and the top electrode. The transparent substrate is used for maintaining a light-emitting channel and can form a top heat dissipation channel in cooperation with a transparent heat-conducting layer or realize light beam angle regulation and control or optical fiber coupling installation in cooperation with an optical microstructure. The application can reduce the dependence on gold wire connection, protect the structure of the light-emitting side, and improve the miniaturization, integration and reliability of the device.

Description

Technical Field

[0001] This invention relates to the field of Micro-LED display and optical interconnect technology, and in particular to a highly reliable Micro-LED integrated device. Background Technology

[0002] Micro-LED devices possess advantages such as high brightness, fast response speed, long lifespan, and low power consumption, making them promising candidates for applications in AR glasses, micro-displays, optical communication, and optical interconnects. In AR glasses, CMOS-driven Micro-LED devices can serve as micro-displays, leveraging the current control capabilities of CMOS driver chips and the high brightness of Micro-LED light-emitting chips to improve the readability of display modules in outdoor environments. In optical communication and optical interconnects, CMOS-driven Micro-LED devices can utilize the high-speed modulation capabilities of Micro-LED chip units to build parallel optical communication links between chips or within computing devices, meeting the demands for high-bandwidth, low-power data transmission.

[0003] Currently, the mainstream architecture of CMOS-driven Micro-LED devices is as follows: after the Micro-LED light-emitting chip and the CMOS driver chip are bonded, the bottom surface of the CMOS driver chip is fixed on the package bracket or circuit board, and the I / O pins of the CMOS driver chip are connected to the electrodes on the package bracket or circuit board through gold wire bonding.

[0004] The above structure still has the following problems: First, the heat generated by the Micro-LED light-emitting chip during operation usually needs to be conducted to the packaging bracket or circuit board through the CMOS driver chip. Limited heat dissipation channels can easily lead to increased junction temperature, thus affecting device lifespan and reliability. Second, CMOS-driven Micro-LED devices are heterogeneous integrated devices. Under vibration, shock, or high-dynamic operating environments, the gold wires may be damaged or broken under stress, causing electrical connection failure. Third, the gold wire bonding requires reserved metal pads and process clearance areas, resulting in a larger I / O pin area for the CMOS driver chip. This is not conducive to reducing the overall device size and makes it difficult to meet the miniaturization and high integration requirements of applications such as micro-displays and optical communications.

[0005] The International Bureau of the World Intellectual Property Organization (WIPO) published international application text WO2026081183A1, application number PCT / CN2024 / 125741, entitled "Packaging Structure of Microdisplay Chip, Packaging Structure Assembly and AR Glasses," filed on October 18, 2024, and published on April 23, 2026. This application discloses a packaging structure for a CMOS-driven Micro-LED device. The packaging structure involves stacking and electrically connecting the connection terminals of a ring-shaped circuit board to the I / O pin area of ​​the CMOS driver chip. The light-emitting surface of the Micro-LED chip is located in a hollow area of ​​the ring-shaped circuit board. The light emitted by the Micro-LED chip exits from this hollow area, and a lens can be installed within this hollow area for beam angle adjustment. This approach helps reduce the size of the device, but it still has some shortcomings: on the one hand, it fails to effectively improve the heat dissipation channel of the Micro-LED chip; on the other hand, the light-emitting surface of the Micro-LED chip is relatively exposed, making it susceptible to damage from lenses installed in the hollowed-out area, external debris, or other external forces, which affects the reliability of the device.

[0006] Therefore, how to reduce the space occupation and connection failure risk caused by traditional gold wire connections while ensuring normal light output of the Micro-LED chip in CMOS-driven Micro-LED devices, and improve the structural protection capability of the light-emitting side of the Micro-LED chip, is a technical problem that needs to be solved in this field. Summary of the Invention

[0007] The purpose of this invention is to provide a highly reliable Micro-LED integrated device, so as to at least solve the problems of large space occupation and insufficient connection reliability of gold wire connection structure in existing CMOS driven Micro-LED devices, and the easy damage to the light-emitting side of Micro-LED chip by external force.

[0008] To achieve the above objectives, the present invention provides a highly reliable Micro-LED integrated device, comprising: CMOS driver chip, with interface electrodes; A Micro-LED light-emitting chip is disposed on the CMOS driver chip and electrically connected to the CMOS driver chip. The Micro-LED light-emitting chip is provided with a plurality of Micro-LED chip units and a parallel conductive layer located on the light-emitting side of the plurality of Micro-LED chip units. An integrated cover plate is disposed on the side of the parallel conductive layer facing away from the Micro-LED chip unit. The integrated cover plate is provided with a transparent substrate, a bottom electrode, a top electrode, and a conductive hole. The external circuit terminal is connected to the top electrode; The transparent substrate has a central region that is a light-transmitting region, which is disposed opposite to the parallel conductive layer. The bottom electrode is located on the side of the transparent substrate facing the CMOS driver chip and is electrically connected to the interface electrode. The top electrode is located on the side of the transparent substrate facing away from the CMOS driver chip. The conductive via penetrates the transparent substrate and electrically connects the bottom electrode and the top electrode.

[0009] Furthermore, the CMOS driver chip is also provided with a common electrode and a plurality of driving units arranged in an array, the plurality of Micro-LED chip units are arranged in an array, the plurality of driving units and the plurality of Micro-LED chip units are electrically connected in a one-to-one correspondence, and the common electrode is electrically connected to the parallel conductive layer.

[0010] Furthermore, a transparent thermally conductive layer is provided between the lower surface of the light-transmitting area and the upper surface of the parallel conductive layer, and the material of the transparent thermally conductive layer is silicone, epoxy resin, epoxy-siloxane copolymer, diamond or graphene.

[0011] Furthermore, the light-transmitting area is provided with an optical microstructure, which includes a plurality of lenses, a plurality of microlens arrays, or a plurality of blind slots.

[0012] Furthermore, the optical microstructure includes a plurality of lenses disposed on the upper surface of the light-transmitting area, and the plurality of lenses are disposed in a one-to-one correspondence with the plurality of Micro-LED chip units.

[0013] Furthermore, a light-shielding structure is provided between two adjacent lenses, and the material of the light-shielding structure is black resin, metal or ceramic.

[0014] Furthermore, the optical microstructure includes a plurality of microlens arrays disposed on the upper surface of the light-transmitting area, wherein the plurality of microlens arrays are disposed in a one-to-one correspondence with the plurality of Micro-LED chip units.

[0015] Furthermore, the optical microstructure includes a plurality of microlens arrays disposed on the lower surface of the light-transmitting area, wherein the plurality of microlens arrays are disposed in a one-to-one correspondence with the plurality of Micro-LED chip units.

[0016] Furthermore, the optical microstructure includes a plurality of blind holes disposed on the upper surface of the light-transmitting area, wherein each of the plurality of blind holes corresponds to a plurality of Micro-LED chip units, and an optical fiber head is installed in each of the plurality of blind holes.

[0017] Furthermore, the driving unit is located in the central region of the CMOS driving chip, and the interface electrode is located in the peripheral region of the CMOS driving chip.

[0018] Furthermore, the bottom electrode protrudes downward from the lower surface of the transparent substrate, and the bottom electrode is soldered to the interface electrode through a solder layer.

[0019] Furthermore, the external circuit terminals are flexible circuit boards or rigid circuit boards.

[0020] Furthermore, the interface electrode includes an elongated electrode.

[0021] Furthermore, the integrated cover plate is provided with the bottom electrode, the top electrode, and the through hole on both opposite sides.

[0022] Compared with the prior art, the present invention has at least the following beneficial effects: This invention integrates a transparent substrate, a bottom electrode, a top electrode, and a conductive via into an integrated cover plate disposed on the light-emitting side. This integrated cover plate integrates at least the functions of electrical connection switching, light emission channel maintenance, and light emission side protection for the Micro-LED chip unit. On one hand, the bottom electrode, conductive via, and top electrode form an electrical connection switching path from the interface electrode of the CMOS driver chip to the external circuit terminals, which helps reduce the space occupied by traditional gold wire connection structures and lowers the risk of gold wire failure under stress. On the other hand, the light-transmitting area of ​​the transparent substrate is positioned opposite to the parallel conductive layer, maintaining the light emission channel of the Micro-LED chip unit. Simultaneously, the integrated cover plate covering the light-emitting side of the Micro-LED chip unit reduces the risk of external optical components, debris, or external forces directly impacting the Micro-LED chip unit. Therefore, this invention can improve the miniaturization, integration, and reliability of CMOS-driven Micro-LED devices overall. Attached Figure Description

[0023] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and, together with the description, serve to explain the principles of the invention. Other embodiments and many anticipated advantages of the embodiments will be readily recognized as they become better understood through reference to the following detailed description. Other features, objects, and advantages of this application will become more apparent from reading the following detailed description of non-limiting embodiments with reference to the accompanying drawings: Figure 1 This is a schematic diagram of the structure of a CMOS-driven Micro-LED device in the prior art; Figure 2A cross-sectional structural schematic diagram of a high-reliability Micro-LED integrated device provided in Embodiment 1 of the present invention; Figure 3 A top view of the high-reliability Micro-LED integrated device provided in Embodiment 1 of the present invention; Figure 4 This is a schematic diagram of the structure of the high-reliability Micro-LED integrated device provided in Embodiment 3 of the present invention; Figure 5 This is a schematic diagram of the structure of the high-reliability Micro-LED integrated device provided in Embodiment 4 of the present invention; Figure 6 This is a schematic diagram of the structure of the high-reliability Micro-LED integrated device provided in Embodiment 5 of the present invention; Figure 7 This is a schematic diagram of the structure of the high-reliability Micro-LED integrated device provided in Embodiment Six of the present invention; Figure 8 This is a schematic diagram of the structure of the high-reliability Micro-LED integrated device provided in Embodiment 7 of the present invention; Figure 9 This is a schematic diagram of the structure of the high-reliability Micro-LED integrated device provided in Embodiment 8 of the present invention; Figure 10 This is a schematic diagram of the structure of a highly reliable Micro-LED integrated device provided in Embodiment 9 of the present invention.

[0024] Reference numerals: 1. CMOS driver chip; 11. Driver unit; 12. Common electrode; 13. Interface electrode; 2. Micro-LED light-emitting chip; 21. Micro-LED chip unit; 22. Parallel conductive layer; 3. Package bracket; 4. Gold wire; 5. Integrated cover plate; 51. Transparent substrate; 52. Bottom electrode; 53. Top electrode; 54. Conductive via; 6. External circuit terminal; 7. Transparent thermal conductive layer; 8. Lens; 9. Light-shielding structure; 10. Microlens array; 20. Blind hole slot; 30. Fiber optic head. Detailed Implementation

[0025] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. It should be understood that the embodiments described below are only some embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are all within the scope of protection of the present invention.

[0026] In the description of this invention, it should be understood that the terms "upper", "lower", "left", "right", "inner", "outer", "top", "bottom", "center", "periphery", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the structure referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0027] In this invention, unless otherwise explicitly specified and limited, the terms "setting," "connection," "electrical connection," "electrical conduction," and "installation," etc., should be interpreted broadly. For example, it can refer to a direct connection or an indirect connection through an intermediate structure; it can be a mechanical connection or an electrical connection; it can be direct electrical conduction or indirect electrical conduction achieved through a solder layer, conductive layer, conductive via, conductive bump, or other conductive structure. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0028] It should be noted that, Figure 1 This is used to illustrate the structure of CMOS-driven Micro-LED devices in the prior art. Figure 1 The structure shown is not the technical solution claimed in this invention. Figure 1 The markings in the text are only used to illustrate the problems existing in the prior art.

[0029] like Figure 1 As shown, existing CMOS-driven Micro-LED devices typically include a CMOS driver chip 1, a Micro-LED light-emitting chip 2, a package holder 3, and gold wires 4. The Micro-LED light-emitting chip 2 is bonded to the CMOS driver chip 1, and the bottom surface of the CMOS driver chip 1 is fixed to the package holder 3 or a circuit board. The I / O pins of the CMOS driver chip 1 are connected to electrodes on the package holder 3 or the circuit board via the gold wires 4.

[0030] In this existing structure, the heat generated by the Micro-LED light-emitting chip 2 usually needs to be conducted to the package bracket 3 or circuit board first through the CMOS driver chip 1, resulting in limited heat dissipation channels. At the same time, the gold wire 4 is at risk of being damaged or broken under vibration, impact, or high dynamic operating conditions, and the gold wire 4 requires metal pads and process clearance area, which is not conducive to device miniaturization and high integration.

[0031] To address the aforementioned problems, this invention provides an integrated cover plate 5 on the light-emitting side of the Micro-LED chip 2. Within the integrated cover plate 5 are a transparent substrate 51, a bottom electrode 52, a top electrode 53, and a through-hole 54. This allows the integrated cover plate 5 to function both as a covering structure for the light-emitting side of the Micro-LED chip 2 and as an electrical connection structure between the interface electrode 13 of the CMOS driver chip 1 and the external circuit terminal 6. This reduces reliance on the gold wire 4 connection structure and improves the structural protection capability of the light-emitting side of the Micro-LED chip 2. The structure of this invention will be described below with reference to specific embodiments.

[0032] Example 1 like Figure 2 As shown, this embodiment provides a highly reliable Micro-LED integrated device. This highly reliable Micro-LED integrated device includes a CMOS driver chip 1, a Micro-LED light-emitting chip 2, and an integrated cover plate 5.

[0033] The CMOS driver chip 1 includes a driver unit 11, a common electrode 12, and an interface electrode 13. The driver unit 11 is electrically connected to the Micro-LED chip unit 21 in the Micro-LED light-emitting chip 2 to drive and control the Micro-LED chip unit 21. The common electrode 12 is electrically connected to the parallel conductive layer 22 in the Micro-LED light-emitting chip 2. The interface electrode 13 is electrically connected to the bottom electrode 52 in the integrated cover plate 5 to realize external electrical connection transfer of the CMOS driver chip 1.

[0034] The Micro-LED light-emitting chip 2 is disposed on and electrically connected to the CMOS driver chip 1. The Micro-LED light-emitting chip 2 comprises a plurality of Micro-LED chip units 21 and a parallel conductive layer 22. The plurality of Micro-LED chip units 21 can be arranged in an array, and the plurality of driver units 11 can also be arranged in an array, with each driver unit 11 corresponding to and electrically connected to one of the Micro-LED chip units 21. The parallel conductive layer 22 is located on the light-emitting side of the plurality of Micro-LED chip units 21 and is electrically connected to the common electrode 12.

[0035] Combination Figure 3 As shown, the Micro-LED light-emitting chip 2 can be located in the central region of the CMOS driver chip 1, and the interface electrode 13 can be located in the peripheral region of the CMOS driver chip 1. By arranging the interface electrode 13 in the peripheral region, it is convenient for the interface electrode 13 to be connected to the bottom electrode 52 in the integrated cover plate 5, and it is also convenient to transfer the external electrical connection of the CMOS driver chip 1 from the integrated cover plate 5 to the external circuit terminal 6.

[0036] An integrated cover plate 5 is disposed on the side of the parallel conductive layer 22 facing away from the Micro-LED chip unit 21, that is, the integrated cover plate 5 is disposed on the light-emitting side of the Micro-LED light-emitting chip 2. The integrated cover plate 5 is provided with a transparent substrate 51, a bottom electrode 52, a top electrode 53, and a conductive via 54. The transparent substrate 51 is disposed opposite to the parallel conductive layer 22. The bottom electrode 52 is located on the side of the transparent substrate 51 facing the CMOS driver chip 1 and is electrically connected to the interface electrode 13. The top electrode 53 is located on the side of the transparent substrate 51 facing away from the CMOS driver chip 1 and is connected to the external circuit terminal 6. The conductive via 54 penetrates the transparent substrate 51 and electrically connects the bottom electrode 52 and the top electrode 53.

[0037] Therefore, the interface electrode 13 of the CMOS driver chip 1 can sequentially form an electrical connection with the external circuit terminal 6 through the bottom electrode 52, the via 54, and the top electrode 53, thereby forming an electrical connection transition path on the light-emitting side of the Micro-LED light-emitting chip 2. Compared with the traditional method of connecting the I / O pins of the CMOS driver chip through gold wires, this embodiment helps to reduce the dependence on the gold wire connection structure, reduce the risk of electrical connection failure due to force damage or breakage of the gold wires, and reduce the space occupied by the gold wire pads and process clearance area on the device.

[0038] Meanwhile, since the transparent substrate 51 and the parallel conductive layer 22 are disposed opposite each other, and the parallel conductive layer 22 is located on the light-emitting side of the Micro-LED chip unit 21, the light emitted by the Micro-LED chip unit 21 can pass through the parallel conductive layer 22 and the transparent substrate 51 in sequence and then be emitted outward. Therefore, the integrated cover plate 5 can maintain the light-emitting channel of the Micro-LED chip unit 21 while realizing the electrical connection transfer.

[0039] In addition, the integrated cover plate 5 covers the light-emitting side of the Micro-LED chip unit 21, which can form a structural isolation between the Micro-LED chip unit 21 and external optical components, debris or external forces, reducing the risk of the Micro-LED chip unit 21 being squeezed, impacted or damaged by debris, thereby improving the structural reliability of the device.

[0040] Furthermore, the central region of the transparent substrate 51 is a light-transmitting region, which is disposed opposite to the parallel conductive layer 22. A transparent thermally conductive layer 7 is disposed between the lower surface of the light-transmitting region and the upper surface of the parallel conductive layer 22. The transparent thermally conductive layer 7 is used to conduct the heat generated by the Micro-LED chip unit 21 to the transparent substrate 51, thereby forming a top heat dissipation channel that conducts heat from the light-emitting side of the Micro-LED light-emitting chip 2 to the integrated cover plate 5. The material of the transparent thermally conductive layer 7 can be silicone, epoxy resin, epoxy-siloxane copolymer, diamond, or graphene.

[0041] Furthermore, the bottom electrode 52 can protrude downward from the lower surface of the transparent substrate 51, and the bottom electrode 52 and the interface electrode 13 can be soldered together through a solder layer to improve the stability of the electrical connection between the bottom electrode 52 and the interface electrode 13. The external circuit terminal 6 can be a flexible circuit board or a rigid circuit board.

[0042] Furthermore, the driving unit 11 of the CMOS driving chip 1 is located in the central region of the CMOS driving chip 1, and the interface electrode 13 is located in the peripheral region of the CMOS driving chip 1. This layout facilitates the corresponding arrangement of several driving units 11 with several Micro-LED chip units 21, and makes it easy for the interface electrode 13 to be connected to the bottom electrode 52 of the integrated cover plate 5.

[0043] Furthermore, the stacked structure of the Micro-LED chip unit 21 can be obtained through epitaxial growth. The stacked structure of the Micro-LED chip unit 21 includes an n-type semiconductor layer, a multi-quantum-well light-emitting layer, and a p-type semiconductor layer. The p-type semiconductor layer may include an electron blocking layer and a current spreading layer. The multi-quantum-well light-emitting layer may include three pairs of quantum wells, each pair of quantum wells being composed of two types of Al2O3 stacked together. x In y Ga z The N semiconductor layers are stacked with different compositions and have a thickness in the nanometer range, where x+y+z=1, 0≤x≤1, 0≤y≤1, and 0≤z≤1.

[0044] Furthermore, the parallel conductive layer 22 can be a transparent conductive layer. The transparent conductive layer can be an n-type semiconductor layer, an indium tin oxide layer, or a stacked structure formed by stacking an n-type semiconductor layer and an indium tin oxide layer.

[0045] Example 2 This embodiment provides another highly reliable Micro-LED integrated device. The difference between this embodiment and Embodiment 1 is that the material system of the Micro-LED chip unit 21 is different.

[0046] Specifically, the stacked structure of the Micro-LED chip unit 21 includes an n-type semiconductor layer, a multi-quantum-well light-emitting layer, and a p-type semiconductor layer. The n-type semiconductor layer includes at least one semiconductor layer formed of doped AlGaAs material; the multi-quantum-well light-emitting layer includes two types of Al materials stacked alternately. x Ga y In z The p-type semiconductor layer has different compositions and a thickness in the nanometer range, wherein x+y+z=1, 0≤x≤1, 0≤y≤1, and 0≤z≤1; the p-type semiconductor layer includes at least one semiconductor layer formed of doped AlGaAs material.

[0047] This embodiment utilizes the aforementioned AlGaAs and Al x Ga y In z The P-material system can form an epitaxial structure for the Micro-LED chip unit 21 that differs from that in Example 1, to adapt to different device design requirements. The remaining structures in this embodiment are the same as in Example 1, and will not be described again here.

[0048] Example 3 like Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that the light-transmitting area of ​​the transparent substrate 51 is provided with an optical microstructure, which includes a plurality of lenses 8 disposed on the upper surface of the light-transmitting area. The plurality of lenses 8 are disposed in a one-to-one correspondence with a plurality of Micro-LED chip units 21.

[0049] By setting a plurality of lenses 8 on the upper surface of the light-transmitting area of ​​the transparent substrate 51, light can be focused, thereby reducing the beam angle of the light emitted by the Micro-LED chip unit 21. The remaining structure of this embodiment is the same as that of Embodiment 1, and will not be described again here.

[0050] Example 4 like Figure 5 As shown, the difference between this embodiment and Embodiment 3 is that a light-shielding structure 9 is provided between two adjacent lenses 8. The material of the light-shielding structure 9 can be an opaque material such as black resin, metal, or ceramic.

[0051] The light-shielding structure 9 is disposed between two adjacent lenses 8 to shield the light crosstalk between adjacent lenses 8. The rest of the structure in this embodiment is the same as in embodiment 3, and will not be described again here.

[0052] Example 5 like Figure 6 As shown, the difference between this embodiment and Embodiment 3 is that the optical microstructure in the light-transmitting area of ​​the transparent substrate 51 is a microlens array 10 disposed on the upper surface of the light-transmitting area. Several microlens arrays 10 are disposed in a one-to-one correspondence with several Micro-LED chip units 21.

[0053] By providing a microlens array 10 on the upper surface of the light-transmitting area of ​​the transparent substrate 51, the beam angle of the light emitted by the Micro-LED chip unit 21 can be controlled. The remaining structure of this embodiment is the same as that of Embodiment 3, and will not be described again here.

[0054] Example 6 like Figure 7As shown, the difference between this embodiment and Embodiment 5 is that the optical microstructure in the light-transmitting area of ​​the transparent substrate 51 is a plurality of microlens arrays 10 disposed on the lower surface of the light-transmitting area. The plurality of microlens arrays 10 are disposed in a one-to-one correspondence with a plurality of Micro-LED chip units 21.

[0055] In this embodiment, a transparent thermally conductive layer 7 is disposed between the lower surface of the light-transmitting area, the lower surface of the microlens array 10, and the upper surface of the parallel conductive layer 22. The microlens array 10, disposed on the lower surface of the light-transmitting area, can control the beam angle of the light emitted by the Micro-LED chip unit 21. The transparent thermally conductive layer 7 is used to conduct the heat generated by the Micro-LED chip unit 21 to the transparent substrate 51, thereby forming a top heat dissipation channel while achieving beam angle control. The remaining structure of this embodiment is the same as that of Embodiment 5, and will not be described again here.

[0056] Example 7 like Figure 8 As shown, the difference between this embodiment and Embodiment 1 is that the light-transmitting area of ​​the transparent substrate 51 is provided with an optical microstructure, which includes a plurality of blind hole slots 20 disposed on the upper surface of the light-transmitting area. The plurality of blind hole slots 20 are disposed in a one-to-one correspondence with a plurality of Micro-LED chip units 21, and an optical fiber head 30 is installed in each blind hole slot 20.

[0057] By setting a blind aperture slot 20 on the upper surface of the light-transmitting area and installing an optical fiber head 30 within the blind aperture slot 20, the optical fiber head 30 can be docked with the Micro-LED chip unit 21, allowing the light emitted by the Micro-LED chip unit 21 to be coupled into the optical fiber. Therefore, this embodiment can be applied to Micro-LED optical communication scenarios. The remaining structure of this embodiment is the same as that of Embodiment 1, and will not be described again here.

[0058] Example 8 like Figure 9 As shown, the difference between this embodiment and Embodiment 1 is that the interface electrode 13 includes an elongated electrode. Specifically, the interface electrode 13 located on one side of the CMOS driver chip 1 can be configured as an elongated electrode to facilitate a stable electrical connection.

[0059] The remaining structure of this embodiment is the same as that of Embodiment 1, and will not be described again here.

[0060] Example 9 like Figure 10 As shown, the difference between this embodiment and Embodiment 1 is that the integrated cover plate 5 is provided with a bottom electrode 52, a top electrode 53 and a conduction hole 54 on both opposite sides.

[0061] In this embodiment, by providing a bottom electrode 52, a top electrode 53, and a via 54 on both opposite sides of the integrated cover plate 5, an electrical connection transition structure can be formed on both sides of the integrated cover plate 5, enabling the interface electrode 13 on the CMOS driver chip 1 to be connected to the corresponding external circuit terminal 6 through the bottom electrode 52, the via 54, and the top electrode 53 on both sides of the integrated cover plate 5, respectively. The remaining structure of this embodiment is the same as that of Embodiment 1, and will not be described again here.

[0062] In summary, by setting an integrated cover plate 5 on the light-emitting side of the Micro-LED light-emitting chip 2, and making the integrated cover plate 5 have a transparent substrate 51, a bottom electrode 52, a top electrode 53, and a conductive hole 54, the integrated cover plate 5 is no longer just a single light-transmitting or protective structure, but can form an integrated structure that has the functions of electrical connection and transfer, light-emitting channel maintenance, and light-emitting side protection. When further setting structures such as a transparent heat-conducting layer 7, a lens 8, a microlens array 10, or a blind hole slot 20, it is also possible to further realize functions such as top heat dissipation, beam angle adjustment, or fiber optic coupling installation.

[0063] Specifically, the bottom electrode 52 is electrically connected to the interface electrode 13 of the CMOS driver chip 1, and the top electrode 53 is connected to the external circuit terminal 6. The through-hole 54 passes through the transparent substrate 51 and electrically connects the bottom electrode 52 and the top electrode 53. Thus, the interface electrode 13 of the CMOS driver chip 1 can be transferred to the external circuit terminal 6 through the integrated cover plate 5, reducing the dependence on the traditional gold wire 4 connection structure, reducing the risk of gold wire 4 being damaged or broken by force under vibration, impact or high dynamic working environment, and reducing the space occupied by gold wire pads and process clearance area, which is conducive to reducing the device size and improving the device integration.

[0064] Meanwhile, the transparent substrate 51 is disposed opposite to the parallel conductive layer 22, and the integrated cover plate 5 is disposed on the side of the parallel conductive layer 22 facing away from the Micro-LED chip unit 21, so that the light emitted by the Micro-LED chip unit 21 can be emitted outward sequentially through the parallel conductive layer 22 and the transparent substrate 51, thereby maintaining the light emission channel of the Micro-LED chip unit 21 while realizing the external electrical connection transfer.

[0065] Furthermore, when a transparent thermal conductive layer 7 is provided between the lower surface of the light-transmitting area and the upper surface of the parallel conductive layer 22, the heat generated by the Micro-LED chip unit 21 during operation can be conducted to the transparent substrate 51 through the parallel conductive layer 22 and the transparent thermal conductive layer 7, thereby forming a top heat dissipation channel conducted from the light-emitting side of the Micro-LED light-emitting chip 2 to the integrated cover plate 5. This reduces the problem of limited heat dissipation channels caused by heat being conducted only through the CMOS driver chip 1 to the packaging bracket or circuit board, which is beneficial to reduce the junction temperature of the device and improve the device life and reliability.

[0066] Furthermore, when a lens 8 or a microlens array 10 is set in the light-transmitting area, the lens 8 or the microlens array 10 can be set correspondingly to the Micro-LED chip unit 21 to regulate the light emitted by the Micro-LED chip unit 21; when a light-shielding structure 9 is set between two adjacent lenses 8, the optical crosstalk between adjacent lenses 8 can also be reduced; when a blind aperture slot 20 is set in the light-transmitting area and an optical fiber head 30 is installed, the optical fiber head 30 can be docked with the Micro-LED chip unit 21, so that the light emitted by the Micro-LED chip unit 21 can be coupled into the optical fiber, thus making it suitable for Micro-LED optical communication scenarios.

[0067] Furthermore, since the integrated cover plate 5 covers the light-emitting side of the Micro-LED chip unit 21, it can form a structural isolation between the Micro-LED chip unit 21 and external optical components, fiber optic heads 30, debris, or other external forces, reducing the risk of the Micro-LED chip unit 21 being damaged by squeezing, impact, or debris. Therefore, this invention can meet the needs of miniaturization, integration, and high reliability of CMOS-driven Micro-LED devices by realizing electrical connection conversion and light-emitting side protection in the integrated cover plate 5. When further setting structures such as transparent heat-conducting layer 7, lens 8, microlens array 10, or blind hole slot 20, it can realize top heat dissipation channel, beam angle adjustment, or fiber coupling installation, thereby improving the overall reliability of CMOS-driven Micro-LED devices and providing high-performance device solutions for applications such as AR glasses micro-displays and Micro-LED optical communication.

[0068] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, various modifications, equivalent substitutions, or combinations can be made to the above embodiments without departing from the concept of the present invention, and all such modifications, equivalent substitutions, or combinations should fall within the protection scope of the present invention.

Claims

1. A highly reliable Micro-LED integrated device, characterized in that, include: CMOS driver chip, with interface electrodes; A Micro-LED light-emitting chip is disposed on the CMOS driver chip and electrically connected to the CMOS driver chip. The Micro-LED light-emitting chip is provided with a plurality of Micro-LED chip units and a parallel conductive layer located on the light-emitting side of the plurality of Micro-LED chip units. An integrated cover plate is disposed on the side of the parallel conductive layer facing away from the Micro-LED chip unit. The integrated cover plate is provided with a transparent substrate, a bottom electrode, a top electrode, and a conductive hole. The external circuit terminal is connected to the top electrode; The transparent substrate has a central region that is a light-transmitting region, which is disposed opposite to the parallel conductive layer. The bottom electrode is located on the side of the transparent substrate facing the CMOS driver chip and is electrically connected to the interface electrode. The top electrode is located on the side of the transparent substrate facing away from the CMOS driver chip. The conductive via penetrates the transparent substrate and electrically connects the bottom electrode and the top electrode.

2. The high-reliability Micro-LED integrated device according to claim 1, characterized in that, The CMOS driver chip is further provided with a common electrode and a plurality of driving units arranged in an array. The plurality of Micro-LED chip units are arranged in an array. The plurality of driving units and the plurality of Micro-LED chip units are electrically connected in a one-to-one correspondence. The common electrode is electrically connected to the parallel conductive layer.

3. The high-reliability Micro-LED integrated device according to claim 1, characterized in that, A transparent thermally conductive layer is disposed between the lower surface of the light-transmitting area and the upper surface of the parallel conductive layer. The material of the transparent thermally conductive layer is silicone, epoxy resin, epoxy-siloxane copolymer, diamond, or graphene.

4. The high-reliability Micro-LED integrated device according to claim 1, characterized in that, The light-transmitting area is provided with an optical microstructure, which includes a number of lenses, a number of microlens arrays, or a number of blind slots.

5. The high-reliability Micro-LED integrated device according to claim 4, characterized in that, The optical microstructure includes a plurality of lenses disposed on the upper surface of the light-transmitting area, and the plurality of lenses are disposed in a one-to-one correspondence with the plurality of Micro-LED chip units.

6. The high-reliability Micro-LED integrated device according to claim 5, characterized in that, A light-shielding structure is provided between two adjacent lenses, and the material of the light-shielding structure is black resin, metal or ceramic.

7. The high-reliability Micro-LED integrated device according to claim 4, characterized in that, The optical microstructure includes a plurality of microlens arrays disposed on the upper surface of the light-transmitting area, and the plurality of microlens arrays are disposed in a one-to-one correspondence with the plurality of Micro-LED chip units.

8. The high-reliability Micro-LED integrated device according to claim 4, characterized in that, The optical microstructure includes a plurality of microlens arrays disposed on the lower surface of the light-transmitting area, and the plurality of microlens arrays are disposed in a one-to-one correspondence with the plurality of Micro-LED chip units.

9. The high-reliability Micro-LED integrated device according to claim 4, characterized in that, The optical microstructure includes a plurality of blind holes disposed on the upper surface of the light-transmitting area, each of the plurality of blind holes corresponding to a plurality of Micro-LED chip units, and an optical fiber head is installed in each of the plurality of blind holes.

10. The high-reliability Micro-LED integrated device according to claim 2, characterized in that, The driving unit is located in the central region of the CMOS driving chip, and the interface electrode is located in the peripheral region of the CMOS driving chip.

11. The high-reliability Micro-LED integrated device according to claim 1, characterized in that, The bottom electrode protrudes downward from the lower surface of the transparent substrate, and the bottom electrode is soldered to the interface electrode through a solder layer.

12. The high-reliability Micro-LED integrated device according to claim 1, characterized in that, The external circuit terminals are flexible circuit boards or rigid circuit boards.

13. The high-reliability Micro-LED integrated device according to claim 1, characterized in that, The interface electrode includes an elongated electrode.

14. The high-reliability Micro-LED integrated device according to claim 1, characterized in that, The integrated cover plate is provided with the bottom electrode, the top electrode and the through hole on both opposite sides.

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