Display panel and display device

Abstract

The application discloses a display panel and a display device, and belongs to the technical field of display. The display panel comprises a driving back plate, a plurality of light emitting devices and a plurality of refrigeration structures. The plurality of light emitting devices are located on the same side of the driving back plate, and the plurality of light emitting devices are electrically connected with the driving back plate. The plurality of refrigeration structures correspond to the plurality of light emitting devices, and the refrigeration structure and the corresponding light emitting device are stacked in the direction perpendicular to the driving back plate, so that the refrigeration structure can absorb the heat generated by the corresponding light emitting device. The side of the refrigeration structure facing the corresponding light emitting device has a refrigeration surface, and the orthographic projection of the refrigeration surface of the refrigeration structure on the driving back plate intersects and overlaps with the orthographic projection of the corresponding light emitting device on the driving back plate, so that the refrigeration effect of the refrigeration surface on the light emitting device can be improved, the temperature of the light emitting device is better reduced, and the service life and stability of the display panel are improved.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display panel and display device. Background Technology

[0002] Active matrix quantum dot light-emitting diode (AMQLED) display panels have received widespread attention in the field of display technology due to their advantages such as wide color gamut and long lifespan.

[0003] AMQLED display panels typically include a driver backplane and multiple light-emitting devices, all of which can be electrically connected to the driver backplane. These light-emitting devices utilize quantum dots as the luminescent material. When the driver backplane drives the light-emitting devices, the quantum dot luminescent material emits light, enabling the AMQLED display panel to display images.

[0004] However, light-emitting devices continuously generate heat when emitting light. As the temperature of the light-emitting device rises, problems such as the decomposition of the organic film layer inside the light-emitting device and the shedding of quantum dots occur. Consequently, AMQLED display panels have a shorter lifespan and poorer stability. Summary of the Invention

[0005] This application provides a display panel and display device that can solve the problems of short lifespan and poor stability of AMQLED display panels in related technologies. The technical solution is as follows:

[0006] On the one hand, a display panel is provided, including: a driving backplane, multiple light-emitting devices, and multiple cooling structures;

[0007] The plurality of light-emitting devices are all located on the same side of the driving backplate, and the plurality of light-emitting devices are all electrically connected to the driving backplate;

[0008] The plurality of cooling structures correspond to the plurality of light-emitting devices, and the cooling structures and the corresponding light-emitting devices are stacked in a direction perpendicular to the driving back plate; the side of the cooling structure facing the corresponding light-emitting device has a cooling surface, and the orthographic projection of the cooling surface of the cooling structure on the driving back plate overlaps with the orthographic projection of the corresponding light-emitting device on the driving back plate.

[0009] Optionally, the cooling structure includes: a first semiconductor section, a second semiconductor section, a first electrode, a second electrode, and a connecting electrode;

[0010] The first semiconductor portion and the second semiconductor portion are separately disposed in a direction parallel to the drive backplate; in a direction perpendicular to the drive backplate, the first electrode and the second electrode are located on the same side of the first semiconductor portion and the second semiconductor portion, and the connecting electrode is located on the other side of the first semiconductor portion and the second semiconductor portion; and the first semiconductor portion is electrically connected to the first electrode, the second semiconductor portion is electrically connected to the second electrode, and the connecting electrode is electrically connected to the first semiconductor portion and the second semiconductor portion respectively.

[0011] Optionally, the light-emitting device is used to emit light in a direction toward the driving backplate, and the light-emitting device is closer to the driving backplate relative to the cooling structure.

[0012] Optionally, the first electrode is located on the side of the first semiconductor portion facing the light-emitting device, the second electrode is located on the side of the second semiconductor portion facing the light-emitting device, and the connecting electrode is located on the side of the first semiconductor portion and the second semiconductor portion away from the light-emitting device; the first electrode is used to load a positive potential signal, the second electrode is used to load a negative potential signal, and the side of the first electrode and the second electrode facing the light-emitting device is the cooling surface;

[0013] The display panel further includes a support insulating portion located between the first semiconductor portion and the second semiconductor portion, and the connection electrode is also located on the side of the support insulating portion away from the drive backplate.

[0014] Optionally, the supporting insulating part has thermal insulation properties, and the supporting insulating part is in direct contact with the connecting electrode.

[0015] Optionally, the first electrode includes: a first portion and a second portion, the first semiconductor portion covering the first portion, and the second portion protruding from the first semiconductor portion; the second electrode includes: a third portion and a fourth portion, the second semiconductor portion covering the third portion, and the fourth portion protruding from the second semiconductor portion;

[0016] The display panel further includes a thermally conductive insulating layer that covers the second portion and the fourth portion. In a direction perpendicular to the drive backplate, the thickness of the thermally conductive insulating layer is less than or equal to the thickness of the supporting insulating portion.

[0017] Optionally, the first electrode is located on the side of the first semiconductor portion away from the light-emitting device, the second electrode is located on the side of the second semiconductor portion away from the light-emitting device, and the connecting electrode is located on the side of the first semiconductor portion and the second semiconductor portion facing the light-emitting device; the first electrode is used to load a negative potential signal, the second electrode is used to load a positive potential signal, and the side of the connecting electrode facing the light-emitting device is the cooling surface;

[0018] The display panel further includes a heat-insulating layer, which is located between any two adjacent cooling structures, and the portion of the first electrode protruding from the first semiconductor portion and the portion of the second electrode protruding from the second semiconductor portion are both located on the side of the heat-insulating layer away from the driving backplate.

[0019] Optionally, the display panel further includes: an encapsulation layer located on the side of the plurality of light-emitting devices facing away from the driving backplate, and the plurality of cooling structures located on the side of the encapsulation layer facing away from the driving backplate.

[0020] Optionally, the light-emitting device is used to emit light in a direction away from the driving backplate, and the cooling structure is closer to the driving backplate than the light-emitting device.

[0021] Optionally, the driving backplane includes: a substrate, a planarization layer, and a plurality of pixel driving circuits; the plurality of pixel driving circuits are located on one side of the substrate, the planarization layer is located on the side of the plurality of pixel driving circuits opposite to the substrate, and the plurality of light-emitting devices are located on the side of the planarization layer opposite to the substrate; the plurality of pixel driving circuits are electrically connected to the plurality of light-emitting devices.

[0022] The display panel further includes: a pixel definition layer, which is located on the side of the planarization layer opposite to the substrate, and the pixel definition layer has a plurality of pixel openings, and the light-emitting device is located in the pixel openings;

[0023] The cooling structure is located on the side of the pixel definition layer facing the substrate, and a portion of the planarization layer is located between the first semiconductor portion and the second semiconductor portion of the cooling structure.

[0024] Optionally, the first electrode is located on the side of the first semiconductor portion away from the light-emitting device, the second electrode is located on the side of the second semiconductor portion away from the light-emitting device, and the connecting electrode is located on the side of the first semiconductor portion and the second semiconductor portion facing the light-emitting device; the first electrode is used to load a negative potential signal, the second electrode is used to load a positive potential signal, and the side of the connecting electrode facing the light-emitting device is the cooling surface.

[0025] Optionally, the connecting electrode of the cooling structure is electrically connected to the anode of the corresponding light-emitting device;

[0026] The position where the connecting electrode overlaps with the anode is projected onto the substrate, and is located outside the projected position of the pixel opening on the substrate.

[0027] Optionally, the second electrode of the cooling structure is electrically connected to the anode of the corresponding light-emitting device;

[0028] Wherein, the orthogonal projection of the first electrode on the substrate is located outside the orthogonal projection of the pixel opening on the substrate.

[0029] Optionally, the planarization layer includes: a first sub-planarization layer and a second sub-planarization layer;

[0030] The first sub-planarization layer is located on the side of the pixel driving circuit away from the substrate, and a portion of the first sub-planarization layer is located between the first semiconductor portion and the second semiconductor portion of the cooling structure; the second sub-planarization layer is located on the side of the first sub-planarization layer and the cooling structure away from the substrate.

[0031] Wherein, the first sub-planarization layer has thermal insulation properties, and / or, the second sub-planarization layer has thermal conductivity properties.

[0032] On the other hand, a display device is also provided, including a driver chip and any of the above-described display panels, wherein the driver chip is electrically connected to the display panel.

[0033] The beneficial effects of the technical solution provided in this application include at least the following:

[0034] The display panel features multiple cooling structures corresponding to multiple light-emitting devices. These cooling structures can be stacked with their corresponding light-emitting devices in a direction perpendicular to the driving backplate, allowing the cooling structures to absorb the heat generated by the light-emitting devices. Furthermore, the orthographic projection of the cooling surface of the cooling structure onto the driving backplate overlaps with the orthographic projection of the corresponding light-emitting device on the driving backplate. This enhances the cooling effect of the cooling surface on the light-emitting device, thereby better reducing the temperature of the light-emitting device and improving the lifespan and stability of the display panel. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 This is a graph showing the relative brightness of a light-emitting device decaying over time, as provided in an embodiment of this application.

[0037] Figure 2 This is a schematic diagram of the film layer structure of a display panel provided in an embodiment of this application;

[0038] Figure 3 This is a schematic diagram of the film layer structure of another display panel provided in an embodiment of this application;

[0039] Figure 4 This is a schematic diagram of the film layer structure of another display panel provided in an embodiment of this application;

[0040] Figure 5 This is a schematic diagram of the film layer structure of another display panel provided in an embodiment of this application;

[0041] Figure 6 This is a schematic diagram of the film layer structure of another display panel provided in an embodiment of this application;

[0042] Figure 7 This is a schematic diagram of the film layer structure of another display panel provided in an embodiment of this application;

[0043] Figure 8 This is a schematic diagram of the film layer structure of another display panel provided in an embodiment of this application;

[0044] Figure 9 This is a schematic diagram of the film layer structure of another display panel provided in an embodiment of this application;

[0045] Figure 10 This is a schematic diagram of the film layer structure of another display panel provided in an embodiment of this application;

[0046] Figure 11 This is a schematic diagram of the film layer structure of another display panel provided in an embodiment of this application;

[0047] Figure 12 This is a schematic diagram of the film layer structure of another display panel provided in an embodiment of this application. Detailed Implementation

[0048] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0049] Please refer to Figure 2 , Figure 2 This is a schematic diagram of the film layer structure of a display panel according to an embodiment of this application. The display panel 000 may include: a driving backplate 100, multiple light-emitting devices 200, and multiple cooling structures 300.

[0050] Multiple light-emitting devices 200 can be located on the same side of the driving backplate 100, and multiple light-emitting devices 200 can be electrically connected to the driving backplate 100.

[0051] The light-emitting device 200 may include an anode, a light-emitting layer, and a cathode stacked together, and the light-emitting layer may be a quantum dot light-emitting layer. The anode of the light-emitting device 200 may be electrically connected to the driving backplane 100, so that the driving backplane 100 may apply a corresponding voltage to the anode, thereby forming an electric field between the anode and the cathode. The light-emitting layer located between the anode and the cathode may emit light, thereby allowing the display panel 000 to display an image.

[0052] It should be noted that when the back panel 100 drives the light-emitting device 200 to emit light, the light-emitting device 200 will continuously generate heat inside and the heat dissipation is slow, which will cause the temperature of the light-emitting device 200 to rise. This will lead to problems such as decomposition of the organic film layer inside the light-emitting device 200 and quantum dot shedding, which will affect the lifespan and stability of the display panel 000.

[0053] This application embodiment improves the lifespan of the display panel 000 by providing a cooling structure 300. For example... Figure 1 As shown, Figure 1 This is a graph showing the relative brightness decay over time of a light-emitting device provided in an embodiment of this application. The brightness decay curve without the cooling structure 300 is shown as a, the brightness decay curve with the cooling structure 300 and the light-emitting device 200 not in direct contact is shown as b, and the brightness decay curve with the cooling structure 300 and the light-emitting device 200 in direct contact is shown as c.

[0054] Depend on Figure 1 As can be seen, the brightness decay rate of curve a is greater than that of curve b, and also greater than that of curve c. This means that with the cooling structure 300 in place, the brightness of the light-emitting device 200 decays more slowly over time, thus increasing the lifespan of the display panel 000. Furthermore, the brightness decay rate of curve b is greater than that of curve c. This means that when the cooling structure 300 is in direct contact with the light-emitting device 200, the brightness of the light-emitting device 200 decays even more slowly over time, resulting in a more significant improvement in the lifespan of the display panel 000.

[0055] Compared to the display panel 000 without the cooling structure 300, the lifespan of the display panel 000 is approximately twice as long when the cooling structure 300 is not in direct contact with the light-emitting device 200, and approximately five times or more when the cooling structure 300 is in direct contact with the light-emitting device 200. However, since direct contact between the cooling structure 300 and the light-emitting device 200 may affect the charge transfer of the light-emitting device 200, in actual products, the cooling structure 300 is usually not in direct contact with the light-emitting device 200.

[0056] Therefore, the display panel 000 provided in this application embodiment may have multiple cooling structures 300, which may correspond to multiple light-emitting devices 200, and the cooling structures 300 and the corresponding light-emitting devices 200 may be stacked in a direction perpendicular to the driving backplate 100. In this way, the cooling structures 300 can absorb the heat generated by the corresponding light-emitting devices 200, thereby preventing the temperature of the light-emitting devices 200 from rising.

[0057] The cooling structure 300 can be located on the side of the corresponding light-emitting device 200 away from the driving backplate 100, or the cooling structure 300 can be located on the side of the corresponding light-emitting device 200 facing the driving backplate 100.

[0058] Please see Figure 2 The cooling structure 300 can have a cooling surface M on the side facing the corresponding light-emitting device 200. The cooling surface M can reach a temperature below 10 degrees Celsius, and the cooling range of the cooling surface M can reach 0 to 5 degrees Celsius. Before the cooling structure 300 is set, the device temperature of the light-emitting device 200 during normal operation can reach 60 degrees Celsius. After the cooling structure 300 is set, the device temperature can be reduced to below 10 degrees Celsius, and the cooling effect is obvious.

[0059] It should be noted that the cooling effect of the cooling surface M is related to the voltage applied to the first electrode 303 and the second electrode 304 of the cooling structure 300. When the applied voltage is between 1.5 volts and 10 volts, the cooling surface M can achieve a cooling effect below 5 degrees Celsius; when the applied voltage is increased to about 30 volts, the cooling surface M can achieve a cooling effect below 0 degrees Celsius.

[0060] It should also be noted that the orthographic projection of the cooling surface M of the cooling structure 300 on the driving back plate 100 can overlap with the orthographic projection of the corresponding light-emitting device 200 on the driving back plate. In this way, the cooling surface M can better absorb the heat generated by the light-emitting device 200, thereby better reducing the temperature of the light-emitting device 200 and ensuring the lifespan and stability of the display panel 000.

[0061] In summary, this application provides a display panel. The display panel has multiple cooling structures corresponding to multiple light-emitting devices, and the cooling structures can be stacked with their corresponding light-emitting devices in a direction perpendicular to the driving backplate, thereby allowing the cooling structures to absorb the heat generated by the corresponding light-emitting devices. Simultaneously, the orthographic projection of the cooling surface of the cooling structure onto the driving backplate can overlap with the orthographic projection of the corresponding light-emitting device onto the driving backplate. This improves the cooling effect of the cooling surface on the light-emitting devices, thereby better reducing the temperature of the light-emitting devices and improving the lifespan and stability of the display panel.

[0062] Please refer to Figures 2 to 4 The cooling structure 300 may include: a first semiconductor section 301, a second semiconductor section 302, a first electrode 303, a second electrode 304, and a connecting electrode 305.

[0063] The first semiconductor section 301 can be a P-type semiconductor, and the second semiconductor section 302 can be an N-type semiconductor. The first semiconductor section 301 and the second semiconductor section 302 can be separately arranged in a direction parallel to the drive backplate 100, thereby avoiding direct contact between the first semiconductor section 301 and the second semiconductor section 302, which would prevent the cooling structure 300 from malfunctioning.

[0064] The semiconductor material used to prepare the cooling structure 300 can typically be a bismuth telluride alloy or other semiconductor materials with thermoelectric properties. By doping the above materials with impurities such as boron, a P-type semiconductor material can be formed, and by doping the above materials with impurities such as phosphorus, an N-type semiconductor material can be formed.

[0065] In a direction perpendicular to the drive backplate 100, the first electrode 303 and the second electrode 304 may be located on the same side of the first semiconductor section 301 and the second semiconductor section 302, and the first semiconductor section 301 may be electrically connected to the first electrode 303, and the second semiconductor section 302 may be electrically connected to the second electrode 304; while the connecting electrode 305 may be located on the other side of the first semiconductor section 301 and the second semiconductor section 302, and the connecting electrode 305 may be electrically connected to the first semiconductor section 301 and the second semiconductor section 302 respectively.

[0066] like Figure 2 and Figure 3As shown, when a positive potential signal is applied to the first electrode 303 and a negative potential signal is applied to the second electrode 304, current can flow out from the first electrode 303, pass sequentially through the first semiconductor part 301, the connecting electrode 305 and the second semiconductor part 302, and flow into the second electrode 304. At this time, the side of the first electrode 303 and the second electrode 304 facing the light-emitting device 200 can absorb heat, while the side of the connecting electrode 305 away from the light-emitting device 200 can release heat. Therefore, the side of the first electrode 303 and the second electrode 304 facing the light-emitting device 200 is the cooling surface M of the cooling structure 300.

[0067] It should be noted that the orthographic projection of the cooling surface M of the cooling structure 300 on the driving back plate 100 can overlap with the orthographic projection of the corresponding light-emitting device 200 on the driving back plate 100. Therefore, the orthographic projection of the first electrode 303 on the driving back plate 100 can overlap with the orthographic projection of the corresponding light-emitting device 200 on the driving back plate 100; and / or, the orthographic projection of the second electrode 304 on the driving back plate 100 can overlap with the orthographic projection of the corresponding light-emitting device 200 on the driving back plate 100.

[0068] It should also be noted that the embodiments in this application are illustrated in a one-to-one correspondence between the cooling structure 300 and the light-emitting device 200. In other possible implementations, one cooling structure 300 can correspond to two light-emitting devices 200. When the side of the first electrode 303 and the second electrode 304 facing the light-emitting device 200 is the cooling surface M of the cooling structure 300, the orthographic projection of the first electrode 303 of the cooling structure 300 on the driving back plate 100 can overlap with the orthographic projection of the corresponding light-emitting device 200 on the driving back plate 100, and the orthographic projection of the second electrode 304 of the cooling structure 300 on the driving back plate 100 can overlap with the orthographic projection of the corresponding other light-emitting device 200 on the driving back plate 100.

[0069] like Figure 4 As shown, when a negative potential signal is applied to the first electrode 303 and a positive potential signal is applied to the second electrode 304, current can flow out from the second electrode 304, pass sequentially through the second semiconductor section 302, the connecting electrode 305, and the first semiconductor section 301, and flow into the first electrode 303. At this time, the side of the connecting electrode 305 facing the light-emitting device 200 can absorb heat, while the side of the first electrode 303 and the second electrode 304 away from the light-emitting device 200 can release heat. Therefore, the side of the connecting electrode 305 facing the light-emitting device 200 is the cooling surface M of the cooling structure 300. Since the orthographic projection of the cooling surface M of the cooling structure 300 on the driving back plate 100 can overlap with the orthographic projection of the corresponding light-emitting device 200 on the driving back plate, the orthographic projection of the connecting electrode 305 on the driving back plate 100 can also overlap with the orthographic projection of the corresponding light-emitting device 200 on the driving back plate.

[0070] Please refer to Figures 2 to 4 The display panel 000 may further include a pixel definition layer 400, which and a plurality of light-emitting devices 200 may be located on the same side of the driving back panel 100. The pixel definition layer 400 may have a plurality of pixel openings K, which may correspond to a plurality of light-emitting devices 200, and the light-emitting devices 200 may be located within the corresponding pixel openings K.

[0071] The light-emitting device 200 may include an anode, a light-emitting layer, and a cathode stacked in a direction away from the driving backplane 100. The light-emitting layer may include a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, and an electron injection layer stacked in a direction away from the driving backplane 100.

[0072] Among them, the electron transport layer and the electron injection layer can be combined into an electron transport and injection layer. The material of the electron transport and injection layer can be zinc oxide nanoparticles, sputtered zinc oxide thin films, or zinc oxide materials doped with elements such as gallium, aluminum, magnesium, yttrium, zirconium, lithium, copper, and molybdenum.

[0073] The anode of the light-emitting device 200 can be a single layer, and the anode material can be indium tin oxide; the anode can also be three layers, in which case, along the direction away from the driving backplate 100, the anode materials can be indium tin oxide, silver and indium tin oxide in sequence.

[0074] The cathodes of multiple light-emitting devices 200 can be electrically connected to each other, that is, multiple light-emitting devices 200 can share a cathode. The cathode can be a transparent or opaque thin film.

[0075] When the light-emitting device 200 emits light in a direction away from the driving backplate 100, the cathode can be a transparent or semi-transparent thin film. Cathodes made of this material are typically used in high-resolution display products. When the cathode is a transparent thin film, metal oxide materials such as indium zinc oxide can be selected, and the cathode thickness can be 60 nanometers to 200 nanometers. In other cases, the cathode thickness can be 80 nanometers to 100 nanometers, ensuring good conductivity. When the cathode is a semi-transparent thin film, metal materials such as aluminum, silver, or magnesium-silver alloys can be selected, and the cathode thickness can be 10 nanometers to 20 nanometers. The smaller cathode thickness allows for semi-transparency.

[0076] When the light-emitting device 200 emits light in the direction toward the driving backplate 100, the cathode can be an opaque thin film. Cathodes made of this material are typically used in display products with lower resolution. When the cathode is an opaque thin film, metallic materials such as aluminum, silver, or magnesium-silver alloys can be selected. The thickness of the cathode can be 80 nanometers to 150 nanometers. The relatively large cathode thickness allows for opacity.

[0077] It should be noted that the color of the light emitted by the light-emitting material layer in different light-emitting devices 200 can be different. Based on the color of the light emitted by the light-emitting material layer, multiple light-emitting devices 200 can be classified into different types, such as multiple red light-emitting devices, multiple green light-emitting devices, and multiple blue light-emitting devices.

[0078] The anode, hole injection layer, hole transport layer, light-emitting material layer, and electron transport and injection layer in the light-emitting device 200 can all be fabricated using patterning processes, and the thickness of each of these layers can vary in different types of light-emitting devices 200. These patterning processes may include photoresist coating, exposure, development, etching, and photoresist stripping.

[0079] For red light-emitting devices, the thickness of the hole injection layer can be 5 nm to 10 nm; the thickness of the hole transport layer can be 30 nm to 40 nm; the light-emitting material layer can be 2 to 3 layers of quantum dot material that can emit red light, and the thickness of the light-emitting material layer can be 20 nm to 30 nm; the thickness of the electron transport and injection layer can be 30 nm to 60 nm, and in other possible cases, the thickness of the electron transport and injection layer can be 40 nm to 60 nm.

[0080] For green light-emitting devices, the thickness of the hole injection layer can be 5 nm to 10 nm; the thickness of the hole transport layer can be 30 nm to 40 nm; the light-emitting material layer can be 2 to 3 layers of quantum dot material that can emit green light, and the thickness of the light-emitting material layer can be 20 nm to 30 nm; the thickness of the electron transport and injection layer can be 30 nm to 60 nm, and in other possible cases, the thickness of the electron transport and injection layer can be 30 nm to 50 nm or 30 nm to 40 nm.

[0081] For blue light-emitting devices, the thickness of the hole injection layer can be 5 nm to 10 nm; the thickness of the hole transport layer can be 30 nm to 40 nm; the light-emitting material layer can be 2 to 3 layers of quantum dot material that can emit blue light, and the thickness of the light-emitting material layer can be 20 nm to 30 nm; the thickness of the electron transport and injection layer can be 20 nm to 60 nm, and in other possible cases, the thickness of the electron transport and injection layer can be 20 nm to 40 nm.

[0082] In one possible implementation, the light-emitting device 200 can be used to emit light in a direction toward the driving backplate 100, as described above. Figures 2 to 4 The light-emitting device 200 is closer to the driving backplate 100 than the cooling structure 300. That is, the cooling structure 300 can be located on the side of the light-emitting device 200 away from the driving backplate 100. In this way, the cooling structure 300 will not block the light emitted by the light-emitting device 200, thus ensuring the display effect.

[0083] Please continue reading Figures 2 to 4 The display panel 000 may further include an encapsulation layer 500. The encapsulation layer 500 may be located on the side of the plurality of light-emitting devices 200 facing away from the driving backplate 100, and the plurality of cooling structures 300 may be located on the side of the encapsulation layer 500 facing away from the driving backplate 100. The encapsulation layer 500 may include a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked together, thereby encapsulating the plurality of light-emitting devices 200 and protecting the light-emitting devices 200 from corrosion by water and oxygen in the external environment.

[0084] It should be noted that the cooling structure 300 can be fabricated through multiple patterning processes, including photoresist coating, exposure, development, etching, and photoresist stripping. In this embodiment, the cooling structure 300 is formed on the encapsulation layer 500, thus protecting the light-emitting device 200 from the influence of the patterning process of the cooling structure 300. Simultaneously, it also prevents the electrodes of the cooling structure 300 from directly contacting the electrodes of the light-emitting device 200, thereby avoiding interference with the charge transport of the light-emitting device 200.

[0085] It should also be noted that the first electrodes 303 of the multiple cooling structures 300 can be electrically connected to each other, and the second electrodes 304 of the multiple cooling structures 300 can also be electrically connected to each other, thus enabling overall control of the multiple cooling structures 300. In other possible implementations, the multiple cooling structures 300 can also be controlled individually.

[0086] Please continue reading Figures 2 to 4 The display panel 000 may also include a cover layer 900. The cover layer 900 may be located on the side of the multiple cooling structures 300 away from the drive backplate 100, and the cover layer 900 may provide a certain degree of protection for the cooling structures 300.

[0087] like Figure 2 As shown, for the cooling structure 300, in the direction perpendicular to the drive back plate 100, the first electrode 303 is located on the side of the first semiconductor section 301 facing the light-emitting device 200, the second electrode 304 is located on the side of the second semiconductor section 302 facing the light-emitting device 200, and the connecting electrode 305 is located on the side of the first semiconductor section 301 and the second semiconductor section 302 away from the light-emitting device 200.

[0088] exist Figure 2In the cooling structure 300 shown, a positive potential signal is applied to the first electrode 303, and a negative potential signal is applied to the second electrode 304. The sides of the first electrode 303 and the second electrode 304 facing the light-emitting device 200 can absorb heat, while the side of the connecting electrode 305 away from the light-emitting device 200 can release heat. Therefore, the side of the first electrode 303 and the second electrode 304 facing the light-emitting device 200 is the cooling surface M of the cooling structure 300, which can absorb the heat generated by the light-emitting device 200, while the side of the connecting electrode 305 away from the light-emitting device 200 can conduct heat into the air.

[0089] Thus, the distance between the cooling surface M and the light-emitting device 200 is relatively small, so the cooling surface M has a better absorption effect on the heat generated by the light-emitting device 200, and the cooling effect of the cooling surface M on the light-emitting device 200 is better; at the same time, the distance between the connecting electrode 305 and the light-emitting device 200 is relatively large, so as to a certain extent, the heat released from the side of the connecting electrode 305 away from the light-emitting device 200 can be prevented from being conducted to the light-emitting device 200.

[0090] Please refer to Figure 2 The display panel 000 may also include a support insulating portion 600. The support insulating portion 600 may be located between the first semiconductor portion 301 and the second semiconductor portion 302, and the connecting electrode 305 may be located on the side of the support insulating portion 600 away from the drive backplate 100.

[0091] In the direction perpendicular to the drive backplate 100, one side of the support insulation portion 600 can directly contact the connecting electrode 305, and the other side can directly contact the encapsulation layer 500. In this way, the support insulation portion 600 can provide a certain degree of support for the connecting electrode 305. At the same time, the support insulation portion 600 is insulating, which can prevent the various parts of the cooling structure 300 from being electrically connected through the support insulation portion 600 and affecting the normal operation of the cooling structure 300.

[0092] The supporting insulation portion 600 can also be heat-insulating. In this way, the heat released by the connecting electrode 305 cannot be conducted to the first electrode 303, the second electrode 304, and the encapsulation layer 500 through the supporting insulation portion 600, thereby further ensuring the cooling effect of the cooling surface M.

[0093] The material of the supporting insulation part 600 can be silicon nitride, silicon oxide, silicon oxynitride, polyurethane, phenolic resin, polyester, polyimide, etc., and the thermal conductivity of the supporting insulation part 600 can be less than 0.5 W / (m·K).

[0094] Optionally, for Figure 2The cooling structure 300 shown includes a first electrode 303 that may include a first portion L1 and a second portion L2, and a second electrode 304 that may include a third portion L3 and a fourth portion L4. Specifically, a first semiconductor portion 301 may cover the first portion L1, while the second portion L2 may protrude from the first semiconductor portion 301; a second semiconductor portion 302 may cover the third portion L3, while the fourth portion L4 may protrude from the second semiconductor portion 302.

[0095] Please refer to Figure 3 The display panel 000 may further include a thermally conductive insulating layer 700. The thermally conductive insulating layer 700 may be located on the side of the encapsulation layer 500 opposite to the driving backplate 100. The thermally conductive insulating layer 700 may be located between two adjacent cooling structures 300, and the thermally conductive insulating layer 700 may cover the second portion L2 and the fourth portion L4. In this way, the thermally conductive insulating layer 700 can protect the second portion L2 of the first electrode 303 and the fourth portion L4 of the second electrode 304. Simultaneously, the thermally conductive insulating layer 700 has insulating properties, which can prevent the electrical connection between two adjacent cooling structures 300 through the thermally conductive insulating layer 700 from affecting the normal operation of the cooling structure 300.

[0096] The thermally conductive insulating layer 700 can also be thermally conductive. In this way, the cooling surface M of the cooling structure 300 can absorb some of the heat generated by the light-emitting device 200, while the unabsorbed heat can be conducted to the air through the thermally conductive insulating layer 700, thereby further improving the cooling effect.

[0097] Meanwhile, since the connecting electrode 305 can release heat, in order to prevent the connecting electrode 305 from conducting heat to the encapsulation layer 500 through the thermally conductive insulating layer 700, it is necessary to ensure that the thickness of the thermally conductive insulating layer 700 is less than or equal to the thickness of the supporting insulating part 600 in the direction perpendicular to the drive backplate 100, so as to avoid the connecting electrode 305 and the thermally conductive insulating layer 700 from coming into contact with each other and transferring heat.

[0098] The thermally conductive insulating layer 700 can be made of materials such as graphene, molybdenum sulfide, silicon carbide, aluminum nitride, and alumina, and its thermal conductivity can be greater than 10 W / (m·K). Furthermore, its thermal conductivity can be greater than 100 W / (m·K).

[0099] like Figure 4 As shown, for the cooling structure 300, in the direction perpendicular to the drive back plate 100, the first electrode 303 is located on the side of the first semiconductor section 301 away from the light-emitting device 200, the second electrode 304 is located on the side of the second semiconductor section 302 away from the light-emitting device 200, and the connecting electrode 305 is located on the side of the first semiconductor section 301 and the second semiconductor section 302 facing the light-emitting device 200.

[0100] exist Figure 4 In the cooling structure 300 shown, the first electrode 303 is loaded with a negative potential signal, and the second electrode 304 is loaded with a positive potential signal. The side of the connecting electrode 305 facing the light-emitting device 200 can absorb heat, while the side of the first electrode 303 and the second electrode 304 away from the light-emitting device 200 can release heat. Therefore, the side of the connecting electrode 305 facing the light-emitting device 200 is the cooling surface M of the cooling structure 300, which can absorb the heat generated by the light-emitting device 200, while the side of the first electrode 303 and the second electrode 304 away from the light-emitting device 200 can conduct heat into the air.

[0101] Thus, the distance between the cooling surface M and the light-emitting device 200 is relatively small, so the cooling surface M has a better absorption effect on the heat generated by the light-emitting device 200, and the cooling effect of the cooling surface M on the light-emitting device 200 is better; at the same time, the distance between the first electrode 303 and the second electrode 304 and the light-emitting device 200 is relatively large, so as to a certain extent, the heat released by the first electrode 303 and the second electrode 304 on the side away from the light-emitting device 200 can be prevented from being conducted to the light-emitting device 200.

[0102] Optionally, for Figure 4 The cooling structure 300 shown includes a first electrode 303 that may include a first portion L1 and a second portion L2, and a second electrode 304 that may include a third portion L3 and a fourth portion L4. Specifically, a first semiconductor portion 301 may cover the first portion L1, while the second portion L2 may protrude from the first semiconductor portion 301; a second semiconductor portion 302 may cover the third portion L3, while the fourth portion L4 may protrude from the second semiconductor portion 302.

[0103] Please refer to Figure 4 The display panel 000 may further include a heat-insulating layer 800, which may be located on the side of the encapsulation layer 500 away from the driving backplate 100. The heat-insulating layer 800 may be located between any two adjacent cooling structures 300. The portion of the first electrode 303 protruding from the first semiconductor portion 301 and the portion of the second electrode 304 protruding from the second semiconductor portion 302 are both located on the side of the heat-insulating layer 800 away from the driving backplate 100. That is, the second portion L2 of the first electrode 303 and the fourth portion L4 of the second electrode 304 are both located on the side of the heat-insulating layer 800 away from the driving backplate 100.

[0104] In the direction perpendicular to the drive backplate 100, one side of the thermal insulation layer 800 can directly contact the second portion L2 of the first electrode 303 and the fourth portion L4 of the second electrode 304, and the other side can directly contact the encapsulation layer 500. In this way, the thermal insulation layer 800 can provide some support for the second portion L2 of the first electrode 303 and the fourth portion L4 of the second electrode 304. At the same time, the thermal insulation layer 800 is insulating, which can prevent electrical connection between two adjacent cooling structures 300 through the thermal insulation layer 800 from affecting the normal operation of the cooling structure 300.

[0105] The thermal insulation layer 800 can also be thermally insulating. In this way, the heat released by the first electrode 303 and the second electrode 304 cannot be conducted to the encapsulation layer 500 and the light-emitting device 200 through the thermal insulation layer 800, thereby further ensuring the cooling effect of the cooling surface M.

[0106] The material of the thermal insulation layer 800 can be silicon nitride, silicon oxide, silicon oxynitride, polyurethane, phenolic resin, polyester, polyimide, etc., and the thermal conductivity of the thermal insulation layer 800 can be less than 0.5 W / (m·K).

[0107] like Figure 5 and Figure 6 As shown, the driving backplane 100 may include: a substrate 101, a planarization layer 102, and multiple pixel driving circuits. The pixel driving circuits may include transistors T.

[0108] The substrate 101 can be made of materials such as glass, quartz, polyimide, or polyethylene terephthalate.

[0109] Multiple pixel driving circuits can be located on the same side of the substrate 101, the planarization layer 102 can be located on the side of the multiple pixel driving circuits away from the substrate 101, and the pixel definition layer 400 and multiple light-emitting devices 200 can be located on the side of the planarization layer 102 away from the substrate 101.

[0110] Multiple pixel driving circuits can correspond to multiple light-emitting devices 200, and the pixel driving circuits can be electrically connected to the corresponding light-emitting devices 200. The pixel driving circuits can include transistors T, and multiple transistors T can be electrically connected to the corresponding light-emitting devices 200, thereby driving the light-emitting devices 200 to emit light.

[0111] In another possible implementation, the light-emitting device 200 can be used to emit light in a direction away from the driving backplate 100, as described above. Figures 7 to 12The cooling structure 300 is closer to the driving backplate 100 than the light-emitting device 200; that is, the cooling structure 300 can be located on the side of the light-emitting device 200 facing the driving backplate 100. In this way, the cooling structure 300 will not block the light emitted by the light-emitting device 200, thus ensuring the display effect.

[0112] Please continue to refer to this. Figures 7 to 12 The driving backplane 100 may include: a substrate 101, a planarization layer 102, and multiple pixel driving circuits. The pixel driving circuits may include transistors T.

[0113] The substrate 101 can be made of materials such as glass, quartz, polyimide, or polyethylene terephthalate.

[0114] Multiple pixel driving circuits can be located on the same side of the substrate 101, the planarization layer 102 can be located on the side of the multiple pixel driving circuits away from the substrate 101, and the pixel definition layer 400 and multiple light-emitting devices 200 can be located on the side of the planarization layer 102 away from the substrate 101.

[0115] Multiple pixel driving circuits can correspond to multiple light-emitting devices 200, and the pixel driving circuits can be electrically connected to the corresponding light-emitting devices 200. The pixel driving circuits can include transistors T, and multiple transistors T can be electrically connected to the corresponding light-emitting devices 200, thereby driving the light-emitting devices 200 to emit light.

[0116] The cooling structure 300 can be located on the side of the pixel definition layer 400 and the light-emitting device 200 facing the substrate 101.

[0117] It should be noted that a portion of the planarization layer 102 may be located between the first semiconductor portion 301 and the second semiconductor portion 302 of the cooling structure 300, thereby preventing the formation of a hollow structure between the first semiconductor portion 301 and the second semiconductor portion 302. Simultaneously, another portion of the planarization layer 102 may be located on the side of the cooling structure 300 facing away from the substrate 101, that is, this portion of the planarization layer 102 may be located between the cooling structure 300 and the light-emitting device 200, thereby improving the flatness of the film layer and preventing direct contact between the cooling structure 300 and the light-emitting device 200 from affecting charge transport within the light-emitting device 200.

[0118] Optionally, such as Figures 7 to 12 As shown, the planarization layer 102 may include: a first sub-planarization layer 1021 and a second sub-planarization layer 1022.

[0119] The first sub-planarization layer 1021 can be located on the side of the multiple pixel driving circuits away from the substrate 101, and a portion of the first sub-planarization layer 1021 can be located between the first semiconductor section 301 and the second semiconductor section 302 of the cooling structure 300, thereby avoiding the formation of a hollow structure between the first semiconductor section 301 and the second semiconductor section 302.

[0120] The second sub-planarization layer 1022 can be located on the side of the first sub-planarization layer 1021 and the cooling structure 300 away from the substrate 101, thereby improving the flatness of the film layer and avoiding direct contact between the cooling structure 300 and the light-emitting device 200, which would affect the normal operation of the light-emitting device 200.

[0121] The first sub-planarization layer 1021 may be thermally insulating, and / or the second sub-planarization layer 1022 may be thermally conductive. In this way, the second sub-planarization layer 1022 can accelerate the conduction of heat generated by the light-emitting device 200 to the cooling surface M of the cooling structure 300, while the first sub-planarization layer 1021 can prevent the heat released by the cooling structure 300 from being conducted to the light-emitting device 200.

[0122] It should also be noted that the display panel 000 may also include an encapsulation layer 500 and a cover layer 900.

[0123] The encapsulation layer 500 can be located on the side of the multiple light-emitting devices 200 away from the driving backplate 100. The encapsulation layer 500 can be used to encapsulate the light-emitting devices 200 and protect them from water and oxygen corrosion in the external environment.

[0124] The cover layer 900 can be located on the side of the encapsulation layer 500 away from the driving backplate 100, which can provide a certain degree of protection for the film layer of the display panel 000.

[0125] like Figure 7 As shown, for the cooling structure 300, in the direction perpendicular to the drive backplate 100, the first electrode 303 is located on the side of the first semiconductor section 301 facing away from the light-emitting device 200, the second electrode 304 is located on the side of the second semiconductor section 302 facing away from the light-emitting device 200, and the connecting electrode 305 is located on the side of the first semiconductor section 301 and the second semiconductor section 302 facing the light-emitting device 200. Furthermore, the first electrode 303 and the second electrode 304 can be disposed on the same layer as the source and drain electrodes in the transistor T and made of the same material.

[0126] exist Figure 7In the cooling structure 300 shown, the first electrode 303 is loaded with a negative potential signal, and the second electrode 304 is loaded with a positive potential signal. The side of the connecting electrode 305 facing the light-emitting device 200 can absorb heat, while the side of the first electrode 303 and the second electrode 304 away from the light-emitting device 200 can release heat. Therefore, the side of the connecting electrode 305 facing the light-emitting device 200 is the cooling surface M of the cooling structure 300, which can absorb the heat generated by the light-emitting device 200, while the side of the first electrode 303 and the second electrode 304 away from the light-emitting device 200 can conduct heat to the driving backplate 100, and then to the air.

[0127] Thus, the distance between the cooling surface M and the light-emitting device 200 is relatively small, so the cooling surface M has a better absorption effect on the heat generated by the light-emitting device 200, and the cooling effect of the cooling surface M on the light-emitting device 200 is better; at the same time, the distance between the first electrode 303 and the second electrode 304 and the light-emitting device 200 is relatively large, so as to a certain extent, the heat released by the first electrode 303 and the second electrode 304 on the side away from the light-emitting device 200 can be prevented from being conducted to the light-emitting device 200.

[0128] Please continue to refer to this. Figure 7 A portion of the first sub-planarization layer 1021 is located between the first semiconductor section 301 and the second semiconductor section 302 of the cooling structure 300, and the connecting electrode 305 is located on the side of this portion of the first sub-planarization layer 1021 facing away from the substrate 101. In this way, this portion of the first sub-planarization layer 1021 can provide a certain support for the connecting electrode 305.

[0129] The first sub-planarization layer 1021 can be thermally insulating, so that the heat released by the first electrode 303 and the second electrode 304 on the side facing the substrate 101 cannot be conducted to the light-emitting device 200 and the connecting electrode 305, thereby ensuring the cooling effect.

[0130] The second sub-planarization layer 1022 can be located on the side of the first sub-planarization layer 1021 and the cooling structure 300 away from the substrate 101, thereby improving the flatness of the film layer. Furthermore, the second sub-planarization layer 1022 is located between the cooling structure 300 and the light-emitting device 200, thereby preventing the cooling structure 300 and the light-emitting device 200 from directly contacting each other and affecting the normal operation of the light-emitting device 200.

[0131] The second sub-planarization layer 1022 can be thermally conductive, which can accelerate the conduction of heat generated by the light-emitting device 200 to the cooling surface M of the cooling structure 300, thereby improving the cooling effect.

[0132] The fabrication process of planarization layer 102 and cooling structure 300 is as follows:

[0133] First, a plurality of pixel driving circuits and a first electrode 303 and a second electrode 304 of a cooling structure 300 are formed on one side of the substrate 101. The first electrode 303 and the second electrode 304 of the cooling structure 300 are disposed on the same layer as the source and drain of the transistor T in the pixel driving circuit and are made of the same material.

[0134] Next, a first semiconductor portion 301 is formed on the side of the first electrode 303 away from the substrate 101, and a second semiconductor portion 302 is formed on the side of the second electrode 304 away from the substrate 101.

[0135] Then, a first sub-planarization layer 1021 is formed on the side of the plurality of pixel driving circuits away from the substrate 101, wherein a portion of the first sub-planarization layer 1021 is located between the first semiconductor section 301 and the second semiconductor section 302, and the side of the first sub-planarization layer 1021 away from the substrate 101 is flush with the side of the first semiconductor section 301 away from the substrate 101.

[0136] Then, a connection electrode 305 is formed on the side of the first semiconductor portion 301 and the second semiconductor portion 302 away from the substrate 101, and the connection electrode 305 contacts the first semiconductor portion 301 and the second semiconductor portion 302 respectively.

[0137] Finally, a second sub-planarization layer 1022 is formed on the side of the first sub-planarization layer 1021 and the connecting electrode 305 away from the substrate 101.

[0138] It should be noted that, for Figure 7 In the display panel 000 shown, to ensure the cooling effect of the cooling surface M, the distance between the cooling surface M and the anode of the light-emitting device 200 is relatively close. This may result in parasitic capacitances between the anode of the light-emitting device 200 and the connecting electrode 305, between the anode of the light-emitting device 200 and the first electrode 303, and between the anode of the light-emitting device 200 and the second electrode 304. Such capacitances could potentially cause the light-emitting device 200 to break down, thereby affecting the display effect and impacting the lifespan and stability of the display panel 000. Therefore, this application embodiment employs the following two methods to avoid the impact of parasitic capacitances on the light-emitting device 200.

[0139] Method 1, please refer to Figures 8 to 10 The connecting electrode 305 of the cooling structure 300 is electrically connected to the anode of the corresponding light-emitting device 200. In this way, the connecting electrode 305 of the cooling structure 300 and the anode of the corresponding light-emitting device 200 are at the same potential. Therefore, there is no parasitic capacitance between the anode of the light-emitting device 200 and the connecting electrode 305 of the cooling structure 300, between the anode of the light-emitting device 200 and the first electrode 303, and between the anode of the light-emitting device 200 and the second electrode 304.

[0140] The position where the connecting electrode 305 of the cooling structure 300 overlaps with the anode of the corresponding light-emitting device 200 can be chosen in several ways. For example... Figure 8 As shown, the orthographic projection of the position where the light-emitting device 200 and the connecting electrode 305 overlap on the substrate 101 lies within the orthographic projection of the first semiconductor portion 301 on the substrate 101; as Figure 9 As shown, the orthographic projection of the position where the light-emitting device 200 and the connecting electrode 305 overlap on the substrate 101 lies within the orthographic projection of the second semiconductor section 302 on the substrate 101; as Figure 10 As shown, the light-emitting device 200 and the connecting electrode 305 have two overlaps. The orthographic projection of one overlap position on the substrate 101 is located within the orthographic projection of the first semiconductor part 301 on the substrate 101. The orthographic projection of the other overlap position on the substrate 101 is located within the orthographic projection of the second semiconductor part 302 on the substrate 101.

[0141] To ensure the light-emitting effect of the light-emitting device 200, the anode of the light-emitting device 200 needs to maintain a flat film layer. Since the position where the anode of the light-emitting device 200 overlaps with the connecting electrode 305 is not flat, the orthographic projection of the position where the anode overlaps with the connecting electrode 305 on the substrate 101 must be outside the orthographic projection of the pixel opening K on the substrate 101. However, the orthographic projection of the part of the anode that does not overlap with the connecting electrode 305 on the substrate 101 can all be within the orthographic projection of the pixel opening K on the substrate 101, thereby ensuring the aperture ratio.

[0142] Method 2, please refer to Figure 11 and Figure 12 The second electrode 304 of the cooling structure 300 is electrically connected to the anode of the corresponding light-emitting device 200. Thus, the second electrode 304 of the cooling structure 300 and the anode of the corresponding light-emitting device 200 are at the same potential. At the position corresponding to the second semiconductor section 302, the electric field formed between the anode of the light-emitting device 200 and the connecting electrode 305 cancels out the electric field formed between the second electrode 304 and the connecting electrode 305. However, parasitic capacitances still exist at the position corresponding to the second semiconductor section 302 between the anode of the light-emitting device 200 and the connecting electrode 305, and between the anode of the light-emitting device 200 and the first electrode 304.

[0143] Therefore, the orthographic projection of the second electrode 304 of the cooling structure 300 onto the substrate 101 needs to be positioned outside the orthographic projection of the pixel opening K onto the substrate 101. In this way, the anode portion of the light-emitting device 200 corresponding to the second electrode 304 is covered by the pixel definition layer 400, and this portion of the anode cannot drive the light-emitting layer to emit light. Thus, in the direction perpendicular to the substrate 101, the position of the light-emitting device 200 is offset from the position of the parasitic capacitance, and the parasitic capacitance generated at the position corresponding to the second semiconductor section 302 has a smaller impact on the light-emitting device 200.

[0144] It should be noted that in Method 2, the second electrode 304 of the cooling structure 300 is electrically connected to the anode of the corresponding light-emitting device 200. This allows the cooling structure 300 and the corresponding light-emitting device 200 to operate synchronously. When the pixel driving circuit drives the light-emitting device 200 to emit light, the cooling structure 303 can also be activated simultaneously for cooling. In this way, multiple cooling structures 303 can be individually controlled, thereby reducing power consumption.

[0145] Alternatively, there are two possible ways to connect the second electrode 304 of the cooling structure 300 to the anode of the corresponding light-emitting device 200.

[0146] The first possible scenario, such as Figure 11 As shown, a hole is drilled in the planarization layer 102 so that the anode of the light-emitting device 200 and the second electrode 304 protrude from the second semiconductor portion 302 and overlap. The anode portion at the overlap position is not flat, so it is also necessary to ensure that the orthogonal projection of the hole overlap position on the substrate 101 is outside the orthogonal projection of the pixel opening K on the substrate 101.

[0147] The second possible scenario, such as Figure 12 As shown, one of the source and drain electrodes in transistor T can be electrically connected to the anode of light-emitting device 200, while the first electrode 303 and the second electrode 304 of the cooling structure 300 are disposed in the same layer as the source and drain electrodes and are made of the same material. Therefore, one of the source and drain electrodes electrically connected to the anode of light-emitting device 200 can be directly electrically connected to the second electrode 304. At this time, since the planarization layer 102 plays a certain planarization role on the film layer, the orthographic projection of the position where one of the source and drain electrodes of transistor T overlaps with the second electrode 304 on the substrate 101 can be located within the orthographic projection of the pixel aperture K on the substrate 101, thereby improving the aperture ratio.

[0148] In other possible implementations, for the cooling structure 300, in the direction perpendicular to the drive backplate 100, the first electrode 303 may be located on the side of the first semiconductor section 301 facing the light-emitting device 200, the second electrode 304 may be located on the side of the second semiconductor section 302 facing the light-emitting device 200, and the connecting electrode 305 may be located on the side of the first semiconductor section 301 and the second semiconductor section 302 away from the light-emitting device 200. Furthermore, the connecting electrode 305 may be disposed on the same layer as the source and drain electrodes in the transistor T and made of the same material.

[0149] When a positive potential signal is applied to the first electrode 303 and a negative potential signal is applied to the second electrode 304, the sides of the first electrode 303 and the second electrode 304 facing the light-emitting device 200 can absorb heat, while the side of the connecting electrode 305 away from the light-emitting device 200 can release heat. Therefore, the sides of the first electrode 303 and the second electrode 304 facing the light-emitting device 200 constitute the cooling surface M of the cooling structure 300, which can absorb the heat generated by the light-emitting device 200, while the side of the connecting electrode 305 away from the light-emitting device 200 can conduct heat to the driving backplate 100, and then to the air.

[0150] Other cases of display panels 000 with this cooling structure 300 are similar to those of display panels 000 in the above embodiments, and will not be described in detail here.

[0151] In summary, this application provides a display panel. The display panel has multiple cooling structures corresponding to multiple light-emitting devices, and the cooling structures can be stacked with their corresponding light-emitting devices in a direction perpendicular to the driving backplate, thereby allowing the cooling structures to absorb the heat generated by the corresponding light-emitting devices. Simultaneously, the orthographic projection of the cooling surface of the cooling structure onto the driving backplate can overlap with the orthographic projection of the corresponding light-emitting device onto the driving backplate. This improves the cooling effect of the cooling surface on the light-emitting devices, thereby better reducing the temperature of the light-emitting devices and improving the lifespan and stability of the display panel.

[0152] This application also provides a display device, which can be any product or component with display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigator.

[0153] The display device may include a driver chip and a display panel. The display panel may be an AMQLED display panel. The display panel may be the display panel 000 described in the above embodiments, and the driver chip may be electrically connected to the display panel 000 to drive the display panel 000 to display an image.

[0154] It should be noted that the dimensions of layers and regions may be exaggerated in the accompanying drawings for clarity. Furthermore, it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be intermediate layers. Additionally, it is understood that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may be more than one intermediate layer or element. Furthermore, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Similar reference numerals throughout indicate similar elements.

[0155] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "multiple" refers to two or more unless otherwise expressly defined.

[0156] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A display panel, characterized in that, include: Drive backplane, multiple light-emitting devices and multiple cooling structures; The plurality of light-emitting devices are all located on the same side of the driving backplate, and the plurality of light-emitting devices are all electrically connected to the driving backplate; The plurality of cooling structures correspond to the plurality of light-emitting devices, and the cooling structures and the corresponding light-emitting devices are stacked in a direction perpendicular to the driving back plate; the side of the cooling structure facing the corresponding light-emitting device has a cooling surface, and the orthographic projection of the cooling surface of the cooling structure on the driving back plate overlaps with the orthographic projection of the corresponding light-emitting device on the driving back plate.

2. The display panel according to claim 1, characterized in that, The cooling structure includes: a first semiconductor section, a second semiconductor section, a first electrode, a second electrode, and a connecting electrode; The first semiconductor portion and the second semiconductor portion are separately disposed in a direction parallel to the drive backplate; in a direction perpendicular to the drive backplate, the first electrode and the second electrode are located on the same side of the first semiconductor portion and the second semiconductor portion, and the connecting electrode is located on the other side of the first semiconductor portion and the second semiconductor portion; and the first semiconductor portion is electrically connected to the first electrode, the second semiconductor portion is electrically connected to the second electrode, and the connecting electrode is electrically connected to the first semiconductor portion and the second semiconductor portion respectively.

3. The display panel according to claim 2, characterized in that, The light-emitting device is used to emit light in a direction toward the driving backplate, and the light-emitting device is closer to the driving backplate relative to the cooling structure.

4. The display panel according to claim 3, characterized in that, The first electrode is located on the side of the first semiconductor portion facing the light-emitting device, the second electrode is located on the side of the second semiconductor portion facing the light-emitting device, and the connecting electrode is located on the side of the first semiconductor portion and the second semiconductor portion away from the light-emitting device; the first electrode is used to load a positive potential signal, the second electrode is used to load a negative potential signal, and the side of the first electrode and the second electrode facing the light-emitting device is the cooling surface; The display panel further includes a support insulating portion located between the first semiconductor portion and the second semiconductor portion, and the connection electrode is also located on the side of the support insulating portion away from the drive backplate.

5. The display panel according to claim 4, characterized in that, The supporting insulating part is heat-insulating, and the supporting insulating part is in direct contact with the connecting electrode.

6. The display panel according to claim 4, characterized in that, The first electrode includes: a first portion and a second portion, wherein the first semiconductor portion covers the first portion and the second portion protrudes from the first semiconductor portion; the second electrode includes: a third portion and a fourth portion, wherein the second semiconductor portion covers the third portion and the fourth portion protrudes from the second semiconductor portion; The display panel further includes a thermally conductive insulating layer that covers the second portion and the fourth portion. In a direction perpendicular to the drive backplate, the thickness of the thermally conductive insulating layer is less than or equal to the thickness of the supporting insulating portion.

7. The display panel according to claim 3, characterized in that, The first electrode is located on the side of the first semiconductor portion away from the light-emitting device, the second electrode is located on the side of the second semiconductor portion away from the light-emitting device, and the connecting electrode is located on the side of the first semiconductor portion and the second semiconductor portion facing the light-emitting device; the first electrode is used to load a negative potential signal, the second electrode is used to load a positive potential signal, and the side of the connecting electrode facing the light-emitting device is the cooling surface; The display panel further includes a heat-insulating layer, which is located between any two adjacent cooling structures, and the portion of the first electrode protruding from the first semiconductor portion and the portion of the second electrode protruding from the second semiconductor portion are both located on the side of the heat-insulating layer away from the driving backplate.

8. The display panel according to any one of claims 3 to 7, characterized in that, The display panel further includes: an encapsulation layer located on the side of the plurality of light-emitting devices away from the driving backplate, and the plurality of cooling structures located on the side of the encapsulation layer away from the driving backplate.

9. The display panel according to claim 2, characterized in that, The light-emitting device is used to emit light in a direction away from the driving backplate, and the cooling structure is closer to the driving backplate than the light-emitting device.

10. The display panel according to claim 9, characterized in that, The driving backplane includes: a substrate, a planarization layer, and multiple pixel driving circuits; the multiple pixel driving circuits are located on one side of the substrate, the planarization layer is located on the side of the multiple pixel driving circuits opposite to the substrate, and the multiple light-emitting devices are located on the side of the planarization layer opposite to the substrate; the multiple pixel driving circuits are electrically connected to the multiple light-emitting devices. The display panel further includes: a pixel definition layer, which is located on the side of the planarization layer opposite to the substrate, and the pixel definition layer has a plurality of pixel openings, and the light-emitting device is located in the pixel openings; The cooling structure is located on the side of the pixel definition layer facing the substrate, and a portion of the planarization layer is located between the first semiconductor portion and the second semiconductor portion of the cooling structure.

11. The display panel according to claim 10, characterized in that, The first electrode is located on the side of the first semiconductor portion away from the light-emitting device, the second electrode is located on the side of the second semiconductor portion away from the light-emitting device, and the connecting electrode is located on the side of the first semiconductor portion and the second semiconductor portion facing the light-emitting device; the first electrode is used to load a negative potential signal, the second electrode is used to load a positive potential signal, and the side of the connecting electrode facing the light-emitting device is the cooling surface.

12. The display panel according to claim 11, characterized in that, The connecting electrode of the cooling structure is electrically connected to the anode of the corresponding light-emitting device; The position where the connecting electrode overlaps with the anode is projected onto the substrate, and is located outside the projected position of the pixel opening on the substrate.

13. The display panel according to claim 11, characterized in that, The second electrode of the cooling structure is electrically connected to the anode of the corresponding light-emitting device; Wherein, the orthogonal projection of the first electrode on the substrate is located outside the orthogonal projection of the pixel opening on the substrate.

14. The display panel according to any one of claims 10 to 13, characterized in that, The planarization layer includes: a first sub-planarization layer and a second sub-planarization layer; The first sub-planarization layer is located on the side of the pixel driving circuit away from the substrate, and a portion of the first sub-planarization layer is located between the first semiconductor portion and the second semiconductor portion of the cooling structure; the second sub-planarization layer is located on the side of the first sub-planarization layer and the cooling structure away from the substrate. Wherein, the first sub-planarization layer has thermal insulation properties, and / or, the second sub-planarization layer has thermal conductivity properties.

15. A display device, characterized in that, It includes a driver chip and a display panel as described in any one of claims 1 to 14, wherein the driver chip is electrically connected to the display panel.

Images