Perovskite device and method of manufacturing the same
Patent Information
- Application Number
- CN202611290167.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-08-24
- Publication Date
- 2026-09-29
AI Technical Summary
[0003]然而，钙钛矿太阳能电池的光电性能和稳定性还需进一步提高
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Figure CN122847014A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of perovskite device technology, and specifically to a perovskite device and its fabrication method. Background Technology
[0002] Solar energy, with its high reserves, wide distribution, renewable nature, and pollution-free characteristics, is considered key to solving energy shortages and environmental pollution problems. Solar cells, as an effective way to utilize solar energy, work by directly converting solar radiation into electrical energy using the photovoltaic effect. Perovskite, as an emerging photovoltaic material, has attracted widespread attention due to its excellent carrier mobility and unique defect tolerance. Perovskite solar cells, as third-generation solar cells, offer advantages such as low cost, simple fabrication process, and high photoelectric conversion efficiency.
[0003] However, the photoelectric performance and stability of perovskite solar cells still need further improvement. Summary of the Invention
[0004] This invention provides a perovskite device and its fabrication method to improve the photoelectric performance and stability of the perovskite device.
[0005] In a first aspect, the present invention provides a method for fabricating a perovskite device, comprising: preparing a perovskite precursor solution, wherein the perovskite precursor solution contains a perovskite material, a first self-assembled monolayer material, and a second self-assembled monolayer material, wherein the first self-assembled monolayer material contains phosphate groups and / or carboxylic acid groups, and a carbazole group, and the second self-assembled monolayer material is a silane derivative containing silanoxy groups and alkyl or fluoroalkyl groups; coating one side surface of a transparent metal oxide layer with the perovskite precursor solution, and annealing the obtained liquid film to obtain a perovskite layer and a self-assembled monolayer, wherein the self-assembled monolayer is located between the perovskite layer and the transparent metal oxide layer.
[0006] The transparent metal oxide surface has polar groups such as hydroxyl groups. The phosphate groups and / or carboxylic acid groups in the first self-assembled monolayer material, as well as the silanoxy groups in the second self-assembled monolayer material, can chemically react with and bond to the polar groups of the transparent metal oxide layer. This allows the first and second self-assembled monolayer materials to diffuse into the transparent metal oxide layer during coating and annealing, and automatically assemble below the perovskite layer, thereby forming a self-assembled monolayer between the perovskite layer and the transparent metal oxide layer.
[0007] The carbazole groups in the first self-assembled monolayer material contain π bonds and conjugated structures, which match the energy level of the first self-assembled monolayer material with the valence band top of the perovskite material. This effectively extracts holes and blocks electrons. Therefore, before coating the perovskite precursor solution, there is no need to form an additional hole transport layer on the surface of the transparent metal oxide layer. This preparation method can simultaneously form a perovskite layer and a self-assembled monolayer with hole transport function, thus simplifying the process. Simultaneously, the phosphate and / or carboxylic acid groups in the first self-assembled monolayer material can form chemical bonds with the uncoordinated metal cations in the perovskite layer, thereby passivating defects and improving the photoelectric performance of the perovskite device. The second self-assembled monolayer material is a silane derivative containing alkyl or fluoroalkyl groups, which is hydrophobic and can prevent moisture from penetrating the perovskite layer, improving the stability of the perovskite device.
[0008] In some alternative embodiments, the first self-assembled monolayer material includes one or more of [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), 4-(9H-carbazole-9-yl)butyric acid, and 3-(9H-carbazole-9-yl)propionic acid.
[0009] In some alternative embodiments, the second self-assembled monolayer material includes one or more of perfluorooctyltriethoxysilane (PFTS), octadecyltrichlorosilane (OTS), and dodecyltrimethoxysilane (DTMS).
[0010] In some optional embodiments, the molar concentration ratio of the first self-assembled monolayer material to the second self-assembled monolayer material in the perovskite precursor solution is 1:(0.2-6).
[0011] In some optional embodiments, the molar concentration ratio of the first self-assembled monolayer material to the perovskite material in the perovskite precursor solution is (0.3-4.5):1000.
[0012] In some optional embodiments, the molar concentration ratio of the second self-assembled monolayer material to the perovskite material in the perovskite precursor solution is (0.3-10):1000.
[0013] In some optional embodiments, the total molar concentration of the first self-assembled monolayer material and the second self-assembled monolayer material in the perovskite precursor solution is 1 mmol / L-15 mmol / L.
[0014] In some optional embodiments, the molar concentration of the first self-assembled monolayer material in the perovskite precursor solution is 0.5 mmol / L to 5 mmol / L.
[0015] In some alternative embodiments, the molar concentration of the second self-assembled monolayer material is 0.5 mmol / L to 10 mmol / L.
[0016] In some alternative embodiments, the molar concentration of the perovskite material is 1.0 mol / L - 1.5 mol / L.
[0017] In some optional embodiments, the annealing temperature is 80°C-120°C; the annealing time is 10 min-20 min.
[0018] In some optional embodiments, the method for fabricating the perovskite device further includes: forming an electron transport layer on the side of the perovskite layer opposite to the transparent metal oxide layer; and forming an electrode layer on the surface of the electron transport layer opposite to the perovskite layer.
[0019] In a second aspect, the present invention provides a perovskite device, which is prepared by the preparation method described in the first aspect.
[0020] In some alternative embodiments, the perovskite device includes a perovskite solar cell, a perovskite light-emitting diode, or a perovskite photodetector. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the specific embodiments or related technologies of the present invention, the drawings used in the description of the specific embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0022] Figure 1 This is a schematic diagram of the structure of a perovskite solar cell according to an embodiment of the present invention.
[0023] Explanation of reference numerals in the attached figures: 1-Transparent metal oxide layer; 2-Self-assembled monolayer; 3-Perovskite layer; 4-Electron transport layer; 5-Electrode layer. Detailed Implementation
[0024] The present invention will be further described in detail below with reference to embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit the invention.
[0025] refer to Figure 1 In a first aspect, the present invention provides a method for fabricating a perovskite device, comprising: preparing a perovskite precursor solution, wherein the perovskite precursor solution contains a perovskite material, a first self-assembled monolayer material, and a second self-assembled monolayer material, wherein the first self-assembled monolayer material contains phosphate groups and / or carboxylic acid groups, and a carbazole group, and the second self-assembled monolayer material is a silane derivative containing silanoxy groups and alkyl or fluoroalkyl groups; coating one side surface of a transparent metal oxide layer with the perovskite precursor solution, and annealing the obtained liquid film to obtain a perovskite layer and a self-assembled monolayer, wherein the self-assembled monolayer is located between the perovskite layer and the transparent metal oxide layer.
[0026] The transparent metal oxide surface has polar groups such as hydroxyl groups. The phosphate groups and / or carboxylic acid groups in the first self-assembled monolayer material, as well as the silanoxy groups in the second self-assembled monolayer material, can chemically react with and bond to the polar groups of the transparent metal oxide layer 1. This allows the first and second self-assembled monolayer materials to diffuse into the transparent metal oxide layer 1 during coating and annealing, and automatically assemble below the perovskite layer 3, thereby forming a self-assembled monolayer 2 between the perovskite layer 3 and the transparent metal oxide layer 1.
[0027] The carbazole groups in the first self-assembled monolayer material have π bonds and conjugated structures, which makes the energy level of the first self-assembled monolayer material match the valence band top of the perovskite material. This can effectively extract holes and block electrons. Therefore, before coating the perovskite precursor solution, there is no need to form an additional hole transport layer on the surface of the transparent metal oxide layer 1. This preparation method can simultaneously form the perovskite layer 3 and the self-assembled monolayer 2 with hole transport function, thus simplifying the process. At the same time, the phosphate groups and / or carboxylic acid groups in the first self-assembled monolayer material can form chemical bonds with the uncoordinated metal cations of the perovskite layer 3, thereby passivating defects and improving the optical performance of the perovskite device.
[0028] The second self-assembled monolayer material is a silane derivative containing alkyl or fluoroalkyl groups. It is hydrophobic and can prevent moisture from penetrating the perovskite layer 3, thereby improving the stability of the perovskite device.
[0029] In some alternative embodiments, the material of the transparent conductive oxide layer includes, but is not limited to, one or more of indium tin oxide (ITO), indium zinc oxide (IZO), and aluminum-doped zinc oxide (AZO).
[0030] In some alternative embodiments, the first self-assembled monolayer material includes, but is not limited to, one or more of [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), 4-(9H-carbazole-9-yl)butyric acid, and 3-(9H-carbazole-9-yl)propionic acid.
[0031] In some alternative embodiments, the second self-assembled monolayer material includes, but is not limited to, one or more of perfluorooctyltriethoxysilane (PFTS), octadecyltrichlorosilane (OTS), and dodecyltrimethoxysilane (DTMS).
[0032] In some optional embodiments, the perovskite material can be a three-dimensional perovskite. The general structural formula of a three-dimensional perovskite is ABX3, where A is a monovalent cation, B is a divalent cation, and X is a halide ion. A includes, but is not limited to, a methylamino group (MA). + ), formamidinium group (FA) + ) or cesium ions (Cs + One or more of the following, B including but not limited to Pb 2+ Sn 2+ One or more of these. For example, the material of the perovskite layer 3 can be FAPbI3, MAPbI3, or Cs. 0.15 FA 0.85 PbI3, Cs 0.08 FA 0.92 PbI3, Cs 0.05 FA 0.95 PbI3, etc. The thickness of the perovskite layer 3 can be 400nm-1000nm, such as 400nm, 450nm, 470nm, 500nm, 520nm, 550nm, 570nm, 580nm, 600nm, 700nm, 800nm, 900nm, 1000nm, etc., or any range of the above values.
[0033] In some optional embodiments, the molar concentration ratio of the first self-assembled monolayer material to the second self-assembled monolayer material in the perovskite precursor solution is 1:(0.2-6), such as 1:0.2, 1:0.5, 1:1, 1:1.2, 1:1.4, 1:1.8, 1:2, 1:3, 1:3.5, 1:4, 1:4.5, 1:6, or any range of the above values, preferably 1:(0.5-2). If the molar concentration ratio of the first self-assembled monolayer material to the second self-assembled monolayer material is too small, it indicates that the relative proportion of the first self-assembled monolayer material with hole extraction and passivation functions in the system is insufficient, which may lead to a weakened interface passivation effect and limited hole extraction capability, affecting the photoelectric performance of the device. If the molar concentration ratio of the first self-assembled monolayer material to the second self-assembled monolayer material is too large, it indicates that the relative proportion of the hydrophobic second self-assembled monolayer material in the system is insufficient, which may lead to a decrease in the water-blocking ability of the self-assembled monolayer, affecting the long-term stability of the device. By limiting the molar concentration ratio of the first self-assembled monolayer material to the second self-assembled monolayer material within the above range, it is beneficial to ensure that the self-assembled monolayer has both excellent hole extraction and defect passivation capabilities and good hydrophobic properties, thereby achieving a synergistic improvement in the optoelectronic performance and stability of perovskite devices.
[0034] In some optional embodiments, the molar concentration ratio of the first self-assembled monolayer material to the perovskite material in the perovskite precursor solution is (0.3-4.5):1000, such as 0.3:1000, 1:1000, 2:1000, 3:1000, 4:1000, 4.5:1000, or any range of the above values. If the molar concentration ratio of the first self-assembled monolayer material to the perovskite material is too small, it indicates that the molar concentration of the first self-assembled monolayer material in the perovskite precursor solution is too small, which may lead to an insufficient content of the first self-assembled monolayer material in self-assembled monolayer 2, resulting in insufficient hole extraction and defect passivation capabilities of self-assembled monolayer 2. If the molar concentration ratio of the first self-assembled monolayer material to the perovskite material is too large, it indicates that the molar concentration of the perovskite material in the perovskite precursor solution is too small, which may lead to an insufficient thickness of the perovskite layer 3, resulting in weak light absorption capability of the perovskite layer, thus affecting the optoelectronic performance of the perovskite device. By limiting the molar concentration ratio of the first self-assembled monolayer material to the perovskite material within the above range, the first self-assembled monolayer material in self-assembled monolayer 2 has an appropriate content, giving it better hole transport capability and passivation effect, thereby improving the optoelectronic performance of the perovskite device.
[0035] In some optional embodiments, the molar concentration ratio of the second self-assembled monolayer material to the perovskite material in the perovskite precursor solution is (0.3-10):1000, such as 0.3:1000, 0.5:1000, 1:1000, 3:1000, 5:1000, 7:1000, 9:1000, 10:1000, or any range of the above values. If the molar concentration ratio of the second self-assembled monolayer material to the perovskite material is too small, it indicates that the molar concentration of the second self-assembled monolayer material in the perovskite precursor solution is too small, which may lead to an insufficient content of the second self-assembled monolayer material in self-assembled monolayer 2, resulting in insufficient hydrophobicity of self-assembled monolayer 2. If the molar concentration ratio of the second self-assembled monolayer material to the perovskite material is too large, it indicates that the molar concentration of the second self-assembled monolayer material in the perovskite precursor solution is too large, which may lead to an excessive content of the second self-assembled monolayer material in self-assembled monolayer 2. This excessive content of the second self-assembled monolayer material in self-assembled monolayer 2 can easily increase the hole transport barrier and interfacial series resistance, hindering effective hole extraction and transport. By limiting the molar concentration ratio of the second self-assembled monolayer material to the perovskite material within the above range, self-assembled monolayer 2 has better hole extraction and hole transport capabilities, while reducing water intrusion into the perovskite layer 3, thereby improving the stability of the perovskite device.
[0036] In some optional embodiments, the molar concentration of the first self-assembled monolayer material in the perovskite precursor solution is 0.5 mmol / L-5 mmol / L, such as 0.5 mol / mL, 1 mol / mL, 1.5 mol / mL, 2 mol / mL, 2.5 mol / mL, 3 mol / mL, 3.5 mol / mL, 4 mol / mL, 4.5 mol / mL, 5 mol / mL, or any range of the above values. If the concentration of the first self-assembled monolayer material in the perovskite precursor solution is too low, it may result in an insufficient content of the first self-assembled monolayer material in the self-assembled monolayer 2, leading to insufficient hole extraction and defect passivation capabilities. Conversely, if the molar concentration of the first self-assembled monolayer material in the perovskite precursor solution is too high, it indicates that the molar concentration of the perovskite material in the perovskite precursor solution is too low, potentially resulting in an insufficient thickness of the perovskite layer 3, leading to weak light absorption and thus affecting the optoelectronic performance of the perovskite device. By limiting the molar concentration of the first self-assembled monolayer material in the perovskite precursor solution to the above range, the first self-assembled monolayer material in the self-assembled monolayer 2 is ensured to have an appropriate content, resulting in better hole transport capability and passivation effect for the self-assembled monolayer 2, thereby improving the optoelectronic performance of the perovskite device.
[0037] In some optional embodiments, the molar concentration of the second self-assembled monolayer material in the perovskite precursor solution is 0.5 mmol / L-10 mmol / L, such as 0.5 mmol / L, 1 mmol / L, 3 mmol / L, 5 mmol / L, 7 mmol / L, 9 mmol / L, 10 mmol / L, or any range of the above values. If the molar concentration of the second self-assembled monolayer material in the perovskite precursor solution is too low, it may result in an insufficient content of the second self-assembled monolayer material in self-assembled monolayer 2, leading to insufficient hydrophobicity. Conversely, if the molar concentration of the second self-assembled monolayer material in the perovskite precursor solution is too high, it may result in an excessive content of the second self-assembled monolayer material in self-assembled monolayer 2, which may hinder effective hole extraction and transport. By limiting the molar concentration of the second self-assembled monolayer material in the perovskite precursor solution to the above range, a suitable content of the second self-assembled monolayer material in self-assembled monolayer 2 can be achieved. This allows self-assembled monolayer 2 to have good hole extraction and hole transport capabilities while reducing water intrusion into the perovskite layer 3, thereby improving the stability of the perovskite device.
[0038] In some optional embodiments, the total molar concentration of the first self-assembled monolayer material and the second self-assembled monolayer material in the perovskite precursor solution is 1 mmol / L-15 mmol / L, such as 1 mmol / L, 3 mmol / L, 5 mmol / L, 7 mmol / L, 9 mmol / L, 11 mmol / L, 13 mmol / L, 15 mmol / L, or any range of the above values. If the total molar concentration of the first and second self-assembled monolayer materials is too low, the thickness of the self-assembled monolayer 2 may be too small, or even unable to form a continuous film. If the total molar concentration of the first and second self-assembled monolayer materials is too high, the self-assembled monolayer 2 may be too thick, thereby reducing charge transport efficiency. By limiting the total molar concentration of the first and second self-assembled monolayer materials in the perovskite precursor solution to the above range, the self-assembled monolayer can have good hole transport capability and passivation effect while reducing water intrusion into the perovskite layer 3, thereby improving the photoelectric performance and stability of the perovskite device.
[0039] In some alternative embodiments, the molar concentration of the perovskite material is 1 mol / L to 1.5 mol / L, such as 1.0 mol / mL, 1.1 mol / mL, 1.2 mol / mL, 1.3 mol / mL, 1.4 mol / mL, 1.5 mol / mL, or any range of the above values.
[0040] In some alternative embodiments, the perovskite precursor solution can be coated using processes such as spin coating, blade coating, or slot coating.
[0041] In some optional embodiments, the annealing temperature is 80℃-120℃; such as 80℃, 85℃, 90℃, 95℃, 100℃, 105℃, 110℃, 120℃, etc., or any range of the above values; the annealing time is 10min-20min, such as 10min, 12min, 14min, 16min, 18min, 20min, etc., or any range of the above values.
[0042] In some optional embodiments, the fabrication method of the perovskite device further includes: forming an electron transport layer 4 on the side of the perovskite layer 3 opposite to the transparent metal oxide layer 1; and forming an electrode layer 5 on the surface of the electron transport layer 4 on the side opposite to the perovskite layer 3.
[0043] The electron transport layer 4 is made of inorganic and organic electron transport materials. The inorganic electron transport materials include, but are not limited to, titanium dioxide, tin oxide, or zinc oxide; the organic electron transport materials include, but are not limited to, fullerene C. 60 Fullerene C 70 [6,6]-Phenylacetic-C71-Butyrate Methyl Ester (PC) 71 BM), [6,6]-phenyl-C61-butyrate methyl ester (PC) 61 BM), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), N-phenyl-2-hexyl
[60] fullerenepyrrolidine (PC) 61 H), bis
[60] PCBM (bis-PCBM), 3,4,9,10-perylenetetracarboxylic acid dibenzimidazole (PTCBI), N,2-diphenyl
[60] fullerenepyrrolidine (PC) 61 P). The thickness of the electron transport layer 4 can be 5nm-40nm, such as 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, or any range of the above values.
[0044] The processes for forming the electron transport layer include, but are not limited to, spin coating, blade coating, vapor deposition, and magnetron sputtering. Vapor deposition processes include chemical vapor deposition or physical vapor deposition (such as vacuum evaporation). The specific process can be selected based on the material of the electron transport layer.
[0045] The electrode layer 5 can be a metal electrode and / or a non-metal electrode. The materials of the metal electrode include, but are not limited to, Ag, Au, Al, Cu, Ni, Bi, or Mo; the materials of the non-metal electrode include, but are not limited to, transparent conductive oxides or carbon. The transparent oxides include, but are not limited to, FTO, ITO, AZO, etc.
[0046] Methods for forming electrode layers include, but are not limited to, vacuum evaporation.
[0047] In a second aspect, the present invention provides a perovskite device, which is prepared by the preparation method described in the first aspect.
[0048] In some alternative embodiments, the perovskite device includes a perovskite solar cell, a perovskite light-emitting diode, or a perovskite photodetector.
[0049] The following describes the fabrication method of perovskite devices using perovskite solar cells as an example. The following embodiments are only used to more clearly illustrate the technical solutions of this application, and are therefore merely examples and should not be used to limit the scope of protection of this application.
[0050] Example 1 This embodiment provides a method for fabricating a perovskite solar cell, including the following steps: (1) Clean and dry the ITO conductive glass. The size of the ITO conductive glass is 30cm×40cm. (2) PbI2 and formamidinium iodide (FAI) were dissolved in a mixed solvent of DMF and DMSO (9:1 volume ratio of DMF to DMSO) at a molar ratio of 1:1 to obtain a perovskite precursor mother liquor, wherein the concentration of perovskite material FAPbI3 was 1.2 mol / L; [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz) and perfluorooctyltriethoxysilane (PFTS) were added to the mother liquor, and the mixture was magnetically stirred for 4 h under inert conditions to obtain a perovskite precursor solution, wherein the concentration of MeO-2PACz was 2 mmol / L and the concentration of PFTS was 3 mmol / L. mmol / L; The perovskite precursor solution was spin-coated on the surface of the ITO layer at a speed of 4000 rpm for 30 s. The resulting liquid film was annealed at 100 °C for 10 min to obtain a self-assembled monolayer and a perovskite layer. The self-assembled monolayer was located between the perovskite layer and the ITO layer. (3) A 25 nm thick C60 layer is deposited on the surface of the perovskite layer away from the ITO layer using vacuum thermal evaporation technology, and a 15 nm thick SnO2 layer is deposited on the surface of the C60 layer away from the ITO layer using atomic layer deposition technology. The C60 layer and the SnO2 layer together constitute the electron transport layer. (4) A Cu layer with a thickness of 20 nm was deposited on the surface of the electron transport layer by vacuum evaporation to obtain the electrode layer.
[0051] Example 2 This embodiment provides a method for preparing a perovskite solar cell, which differs from Example 1 only in that the concentration of MeO-2PACz in the perovskite precursor solution is 0.5 mmol / L.
[0052] Example 3 This embodiment provides a method for preparing a perovskite solar cell, which differs from Example 1 only in that the concentration of MeO-2PACz in the perovskite precursor solution is 5 mmol / L.
[0053] Example 4 This embodiment provides a method for preparing a perovskite solar cell, which differs from Example 1 only in that the concentration of PFTS in the perovskite precursor solution is 0.5 mmol / L.
[0054] Example 5 This embodiment provides a method for preparing a perovskite solar cell, which differs from Example 1 only in that the concentration of PFTS in the perovskite precursor solution is 1.0 mmol / L.
[0055] Example 6 This embodiment provides a method for preparing a perovskite solar cell, which differs from Example 1 only in that the concentration of PFTS in the perovskite precursor solution is 10 mmol / L.
[0056] Example 7 This embodiment provides a method for preparing a perovskite solar cell, which differs from Example 1 only in that: MeO-2PACz in the perovskite precursor solution is replaced with an equal concentration of [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), and PFTS is replaced with an equal concentration of octadecyltrichlorosilane (OTS).
[0057] Example 8 This embodiment provides a method for preparing a perovskite solar cell, which differs from Example 1 only in that MeO-2PACz in the perovskite precursor solution is replaced with an equal concentration of 4-(9H-carbazole-9-yl)butyric acid.
[0058] Comparative Example 1 This comparative example provides a method for preparing a perovskite solar cell, which differs from Example 1 only in that the addition of MeO-2PACz to the perovskite precursor solution is omitted.
[0059] Comparative Example 2 This comparative example provides a method for preparing a perovskite solar cell, which differs from Example 1 only in that PFTS is omitted from the perovskite precursor solution.
[0060] Comparative Example 3 This comparative example provides a method for preparing a perovskite solar cell, which differs from Example 1 only in that the addition of PFTS and MeO-2PACz to the perovskite precursor solution is omitted.
[0061] Comparative Example 4 This comparative example provides a method for preparing a perovskite solar cell, which differs from Example 1 only in that the PFTS in the perovskite precursor solution is replaced with an equal concentration of 2PACz.
[0062] Comparative Example 5 This comparative example provides a method for preparing a perovskite solar cell, which differs from Example 1 only in that MeO-2PACz in the perovskite precursor solution is replaced with an equal concentration of OTS.
[0063] Test case 1) Photoelectric conversion efficiency test 100 mW / cm² was provided for perovskite solar cells using an AM 1.5G solar simulator. 2 Under illumination, the current-voltage characteristic curve of the perovskite solar cell was measured using a digital source meter, and the photoelectric conversion efficiency (PCE) of the perovskite solar cell was obtained. The effective area of the perovskite solar cell was 1 cm². 2 .
[0064] 2) Stability test Unencapsulated perovskite solar cells were placed in an environment with a temperature of 25°C and a humidity of 40%RH, and the photoelectric conversion efficiency was tested and recorded at different times. The photoelectric conversion efficiency of the perovskite solar cell after 0 hours in this environment was denoted as PCE0, and the photoelectric conversion efficiency after 1000 hours in this environment was denoted as PCE1. The ratio of PCE1 to PCE0 is the PCE retention rate of the cell.
[0065] The photoelectric conversion efficiency and stability of the perovskite solar cells in Examples 1-8 and Comparative Examples 1-5 were tested, and the test results are shown in Table 1.
[0066] Table 1 Performance test results of perovskite solar cells prepared in each embodiment and comparative example
[0067] As shown in Table 1, adding the first and second monolayer materials to the perovskite precursor solution during the coating and annealing process creates a self-assembled monolayer between the perovskite layer and the transparent metal oxide layer. This effectively extracts holes and prevents moisture from penetrating the perovskite layer, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.
[0068] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention. Furthermore, in this application, "too small" means less than the lower limit of the corresponding numerical range, and "too large" means exceeding the upper limit of the corresponding numerical range.
Claims
1. A method for fabricating a perovskite device, characterized in that, include: A perovskite precursor solution is prepared, wherein the perovskite precursor solution contains perovskite material, a first self-assembled monolayer material and a second self-assembled monolayer material, wherein the first self-assembled monolayer material contains phosphate groups and / or carboxylic acid groups and carbazole groups, and the second self-assembled monolayer material is a silane derivative containing silanoxy groups and alkyl or fluoroalkyl groups. The perovskite precursor liquid is coated on one side of the transparent metal oxide layer, and the resulting liquid film is annealed to obtain a perovskite layer and a self-assembled monolayer, wherein the self-assembled monolayer is located between the perovskite layer and the transparent metal oxide layer.
2. The preparation method according to claim 1, characterized in that, The first self-assembled monolayer material includes one or more of [2-(9H-carbazole-9-yl)ethyl]phosphonic acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, 4-(9H-carbazole-9-yl)butyric acid, and 3-(9H-carbazole-9-yl)propionic acid; And / or, the second self-assembled monolayer material includes one or more of perfluorooctyltriethoxysilane, octadecyltrichlorosilane, and dodecyltrimethoxysilane.
3. The preparation method according to claim 1 or 2, characterized in that, The molar concentration ratio of the first self-assembled monolayer material to the second self-assembled monolayer material in the perovskite precursor solution is 1:(0.2-6).
4. The preparation method according to any one of claims 1 to 3, characterized in that, In the perovskite precursor solution, the molar concentration ratio of the first self-assembled monolayer material to the perovskite material is (0.3-4.5):1000; And / or, in the perovskite precursor solution, the molar concentration ratio of the second self-assembled monolayer material to the perovskite material is (0.3-10):1000; And / or, in the perovskite precursor solution, the total molar concentration of the first self-assembled monolayer material and the second self-assembled monolayer material is 1 mmol / L-15 mmol / L.
5. The preparation method according to any one of claims 1 to 4, characterized in that, In the perovskite precursor solution, the molar concentration of the first self-assembled monolayer material is 0.5 mmol / L-5 mmol / L; And / or, in the perovskite precursor solution, the molar concentration of the second self-assembled monolayer material is 0.5 mmol / L-10 mmol / L; And / or, in the perovskite precursor solution, the molar concentration of the perovskite material is 1.0 mol / L-1.5 mol / L.
6. The preparation method according to claim 1, characterized in that, The annealing temperature is 80℃-120℃; the annealing time is 10min-20min.
7. The preparation method according to claim 1, characterized in that, Also includes: An electron transport layer is formed on the side of the perovskite layer opposite to the transparent metal oxide layer; An electrode layer is formed on the surface of the electron transport layer opposite to the perovskite layer.
8. A perovskite device, characterized in that, It is prepared by the preparation method according to any one of claims 1 to 7.
9. The perovskite device according to claim 8, characterized in that, The perovskite devices include perovskite solar cells, perovskite light-emitting diodes, or perovskite photodetectors.