Plasma-resistant structure, method for manufacturing plasma-resistant structure, electrostatic chuck, edge ring, fiber structure, component for plasma processing apparatus, and method for repairing component for plasma processing apparatus

Abstract

The present invention provides a long-life plasma-resistant structure, an electrostatic chuck, an edge ring, a fiber structure, a member for a plasma processing apparatus, a manufacturing method of such a plasma-resistant structure, and a repairing method of a member for a plasma processing apparatus. A first member 2, a second member 3, an intermediate member 4 disposed between the first member 2 and the second member 3, and a plasma-protective material 5 containing fibers are provided. At least one of the first member 2 and the second member 3 has plasma resistance, and the plasma-protective material 5 containing fibers is disposed on the outer surface side of the plasma-resistant structure 1 at the end portion of the intermediate member 4.

Description

Technical Field

[0001] This invention relates to plasma-resistant structures, methods for manufacturing plasma-resistant structures, electrostatic chucks, edge rings, fiber structures, components for plasma processing apparatuses, and methods for repairing components for plasma processing apparatuses. Background Technology

[0002] Currently, as a semiconductor manufacturing apparatus, an etching apparatus that uses plasma to dry etch an object is used. In this etching apparatus, an electrostatic chuck is used to hold the object by utilizing electrostatics. In the electrostatic chuck, a holding member that holds the object is joined to a base that holds the holding member by a bonding layer. A plasma protection layer for mitigating plasma damage to the bonding layer is joined to the outer surface of the bonding layer (Patent Documents 1 and 2).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-165776

[0006] Patent Document 2: Japanese Patent Application Publication No. 2021-44303 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] The plasma protective layer described in Patent Documents 1 and 2 is formed using thermosetting resin or elastomer, and further improvements are required from the viewpoint of plasma resistance. Similarly, in the enclosed space where plasma is used in plasma processing apparatuses, further improvements are required from the viewpoint of plasma resistance in order to maintain airtightness. Through such improvements, it is hoped that the lifespan of electrostatic chucks and plasma processing apparatuses can be extended.

[0009] The purpose of this invention is to provide a long-life plasma-resistant structure, an electrostatic chuck, an edge ring, a fiber structure, a component for a plasma processing device, a method for manufacturing such a plasma-resistant structure, and a method for repairing the component for the plasma processing device.

[0010] Solution for solving the problem

[0011] The plasma-resistant structure disclosed herein is characterized in that,

[0012] Includes a first component, a second component, and an intermediate component disposed between the first component and the second component.

[0013] And plasma protection materials containing fibers,

[0014] At least one of the first component and the second component is plasma resistant, and the fiber-containing plasma protective material is disposed on the outer surface side of the plasma resistant structure at the end of the intermediate component.

[0015] In the plasma-resistant structure disclosed herein, it is also possible that...

[0016] The fiber-containing plasma protective material is disposed on the outer periphery of the intermediate component.

[0017] In the plasma-resistant structure disclosed herein, it is also possible that...

[0018] The fiber extends along the outer periphery of the intermediate component.

[0019] In the plasma-resistant structure disclosed herein, it is also possible that...

[0020] The plasma protective material containing fibers comprises a fiber structure made of fibers.

[0021] In the plasma-resistant structure disclosed herein, it is also possible that...

[0022] The fiber structure extends along the outer periphery of the intermediate component.

[0023] In the plasma-resistant structure disclosed herein, it is also possible that...

[0024] The intermediate component is a bonding layer.

[0025] In the plasma-resistant structure disclosed herein, it is also possible that...

[0026] The fiber is longer than the outer perimeter of the intermediate component in the extending direction, and the fiber is wound around the outer perimeter of the intermediate component.

[0027] In the plasma-resistant structure disclosed herein, it is also possible that...

[0028] The length of the fibrous structure in the extending direction is longer than the outer perimeter of the intermediate component.

[0029] The fiber structure is wound around the outer periphery of the intermediate component.

[0030] In the plasma-resistant structure disclosed herein, it is also possible that...

[0031] The fiber is an inorganic fiber.

[0032] In the plasma-resistant structure disclosed herein, it is also possible that...

[0033] The fibrous structure comprises at least one of twisted yarn, nonwoven fabric, mesh, or woven fabric.

[0034] The electrostatic chuck disclosed herein is characterized in that,

[0035] Possessing the plasma-resistant structure disclosed herein,

[0036] The first component is a holding component that holds the object being held, and the second component is a base that holds the holding component.

[0037] In the electrostatic chuck disclosed herein, it is also possible to have:

[0038] The outermost periphery of the retaining component is located outside the outermost point of the plasma protective material.

[0039] In the electrostatic chuck disclosed herein, it is also possible to have:

[0040] The outermost periphery of the base is located outside the outermost point of the plasma protective material.

[0041] The edge ring of this disclosure is characterized by,

[0042] It possesses the plasma-resistant structure disclosed herein.

[0043] The plasma processing apparatus components disclosed herein are characterized in that,

[0044] It possesses the plasma-resistant structure disclosed herein.

[0045] The fibrous structure disclosed herein is characterized in that,

[0046] It is a fibrous structure containing fibers.

[0047] The system includes a first component, a second component, and an intermediate component disposed between the first component and the second component.

[0048] And in the plasma-resistant structure of the fiber structure disclosed herein,

[0049] The fiber structure is arranged along the outer periphery of the intermediate component.

[0050] The method for manufacturing a plasma-resistant structure disclosed herein is characterized in that,

[0051] The plasma-resistant structure includes a first component, a second component, and an intermediate component disposed between the first component and the second component.

[0052] And fibrous structures containing fibers,

[0053] The method for manufacturing the plasma-resistant structure includes:

[0054] The process of configuring an intermediate component between the first component and the second component; and

[0055] The process of winding the fiber structure along the outer periphery of the intermediate component.

[0056] The method for repairing components of the plasma processing apparatus disclosed herein is characterized in that,

[0057] The plasma processing apparatus components include a first component, a second component, and an intermediate component disposed between the first component and the second component.

[0058] The repair method for the components of the plasma processing apparatus includes a step of winding a fibrous structure having fibers along the outer periphery of the intermediate component.

[0059] Invention Effects

[0060] According to this disclosure, it is possible to provide long-life plasma-resistant structures, electrostatic chucks, edge rings, fiber structures, components for plasma processing devices, as well as methods for manufacturing such plasma-resistant structures and methods for repairing components for plasma processing devices. Attached Figure Description

[0061] Figure 1 This is a cross-sectional view showing a schematic configuration of the plasma-resistant structure according to an embodiment of the present disclosure.

[0062] Figure 2 This is a cross-sectional view showing another schematic configuration of the plasma-resistant structure according to an embodiment of the present disclosure.

[0063] Figure 3 This is a diagram illustrating an outline of a repair method for a plasma-resistant structure (electrostatic chuck) according to an embodiment of the present disclosure.

[0064] Figure 4 This is a cross-sectional view showing the schematic configuration of an electrostatic chuck according to an embodiment of the present disclosure.

[0065] Figure 5 This is a cross-sectional view showing another schematic configuration of the electrostatic chuck according to an embodiment of the present disclosure.

[0066] Figure 6 This is a diagram illustrating a schematic configuration of the edge ring according to an embodiment of the present disclosure.

[0067] Figure 7 This is a schematic configuration diagram showing the edge ring arranged in a manner that surrounds the electrostatic chuck of the present disclosure embodiment.

[0068] Figure 8 This is a cross-sectional view of a fiber bundle, which is an example of a fiber structure according to an embodiment of the present disclosure.

[0069] Figure 9 This is a cross-sectional photograph of the plasma-resistant structure according to an embodiment of this disclosure.

[0070] Figure 10 This is a cross-sectional photograph of a plasma-resistant structure according to another embodiment of this disclosure.

[0071] Figure 11 This is a cross-sectional photograph of a plasma-resistant structure according to another embodiment of this disclosure.

[0072] Figure 12 This is a cross-sectional view showing another schematic configuration of the electrostatic chuck according to an embodiment of the present disclosure. Detailed Implementation

[0073] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings, but the invention involved in the present disclosure is not limited thereto.

[0074] [Plasma-resistant structure]

[0075] Figure 1 , Figure 2 This is a cross-sectional view showing a schematic configuration of the plasma-resistant structure according to an embodiment of the present disclosure. Figure 1 As shown, the plasma-resistant structure 1 includes a first component 2, a second component 3, an intermediate component 4 disposed between the first component 2 and the second component 3, and a plasma protective material 5 containing fibers. At least one of the first component 2 and the second component 3 has plasma resistance. The plasma protective material 5 containing fibers (hereinafter also simply referred to as plasma protective material 5) is disposed on the outer surface side of the plasma-resistant structure 1 at the end of the intermediate component 4. Here, the "outer surface side" of the plasma-resistant structure 1 refers to the side that is in contact with the external atmosphere. Furthermore, a cross-sectional view showing the schematic configuration of the edge ring according to an embodiment of the present disclosure is also provided. Figure 6 In (B), plasma protection materials 45a and 45b (plasma protection materials 5) are disposed on the outer and inner peripheries of the edge ring 41 (plasma-resistant structure 1) at the end of the intermediate component 44, both of which are located on the outer surface side of the plasma-resistant structure 1 (edge ​​ring 41) in contact with the external atmosphere.

[0076] Furthermore, the plasma-resistant structure 1 can be used in a plasma atmosphere during semiconductor manufacturing processes (examples of applications include semiconductor manufacturing apparatus, plasma processing apparatus, components used inside the apparatus, electrostatic chucks, edge rings, upper electrodes, apparatus inner walls, vent valves, sealing components, etc.). By using it in these applications, the durability of semiconductor manufacturing apparatuses and the like can be improved, making semiconductor manufacturing processes more efficient.

[0077] (First component 2 and second component 3)

[0078] In the plasma-resistant structure 1, either the first component 2 or the second component 3 needs to be plasma-resistant. That is, only the first component 2 can be formed of a plasma-resistant material, or only the second component 3 can be formed of a plasma-resistant material. When both the first component 2 and the second component 3 are formed of plasma-resistant materials, the intermediate component 4 disposed between them can be more effectively protected from the effects of plasma, which is therefore preferred.

[0079] Furthermore, when the first component 2 and the second component 3 are planar, disc-shaped, plate-shaped, cubic, columnar, etc., they can efficiently cover the intermediate component 4 and more effectively protect the intermediate component 4 from plasma effects, thus being preferred. Alternatively, they can be structures obtained by removing any pattern from both components (e.g., ring-shaped, arc-shaped, comb-shaped, etc.). The first component 2 and / or the second component 3 can also be a fiber-containing plasma protective material 5, as described later. Figure 2 As shown in the plasma-resistant structure 1a, the first component 2a and / or the second component 3 can also be plasma protective materials 5 containing fibers. Furthermore, the first component 2 and / or the second component 3 can be constructed using multiple constituent elements.

[0080] Both organic and inorganic materials can be cited as plasma-resistant materials. Among organic materials, nylon, polyimide, polyamide, polyester, acrylic acid, polyolefin, aromatic polyetherketone, polyphenylene sulfide, fluoropolymers, polyvinyl alcohol, ethylene-vinyl alcohol resin, phenolic resin, polyvinyl chloride, and silicone resin are preferred, but not limited to these. Among inorganic materials, metals and ceramics are preferred, but not limited to these. Examples of inorganic materials include substances containing at least one of yttrium, aluminum, zirconium, hafnium, calcium, magnesium, nickel, titanium, and silicon; oxides, hydroxides, carbides, or mixtures thereof (minerals, etc.) of these elements may also be included; hydroxyapatite may also be included in the mixture.

[0081] (Intermediate component 4)

[0082] There are no particular limitations on the intermediate component 4. It can be a component with functions such as joining (including temporary joints that can be peeled off), sealing, insulation, thermal control (thermal insulation, thermal conduction), and electrical conductivity (hereinafter also referred to as "functional component"), or it can be a filling material or space without any functional intent. Therefore, there are no limitations on the material of the intermediate component 4. There are also no particular limitations on the shape of the intermediate component 4. It can be hollow, layered, disc-shaped, plate-shaped, columnar, etc., or it can be a stacked body, a structure after removing it according to any pattern (e.g., ring-shaped, arc-shaped, comb-shaped, etc.), or a structure composed of multiple such structures. However, since it can reduce the contact area between the intermediate component 4 and the plasma atmosphere (external atmosphere), it is preferred to be layered, disc-shaped, plate-shaped, columnar, etc. In addition, the intermediate component 4 may or may not have plasma resistance. Preferably, most of the intermediate component 4 is covered by the first component 2 and the second component 3. Specifically, it is preferred that the area of ​​the intermediate component 4 in contact with the first component 2 and the second component 3 is more than 10 times the area of ​​the intermediate component 4 facing the plasma protective material 5. Therefore, most of the outer surface of the plasma-resistant structure 1 possesses plasma resistance, thereby ensuring the plasma resistance of the plasma-resistant structure 1. Specific examples of the intermediate component 4 include sealing materials (O-rings), bonding layers (…). Figure 4 The bonding layer 14), insulation layer, heat transfer layer, etc.

[0083] Furthermore, when the intermediate component 4 has an inner peripheral side (such as a ring shape, for example, the plasma-resistant structure 1 is an edge ring, or an electrostatic chuck 31 with a through portion, etc.) and the inner peripheral side of the intermediate component 4 is in contact with the plasma space, it is preferable to arrange the plasma protection material 5 on the inner peripheral side of the ring, and more preferably to arrange the plasma protection material 5 along the inner peripheral side of the ring.

[0084] (Bonding layer)

[0085] There are no particular restrictions on the bonding layer, which is one of the functional components; metals, adhesive materials (resins), etc., can be used. From an operational point of view, solders (silver solder, copper solder, copper alloy solder, aluminum solder, nickel solder, active silver solder, titanium solder, solder materials, etc.) can be used as metals. The most suitable material can be selected based on the relationship between the properties (thermal expansion, thermal conductivity, etc.) of the first component 2 and the second component 3 to be bonded.

[0086] In addition to bonding, the bonding layer can also have other functions. For example, it can provide insulation, thermal insulation, thermal conductivity, and electrical conductivity.

[0087] (Adhesive material)

[0088] The aforementioned bonding layer (functional component) can be an adhesive material. Examples of adhesive materials include silicone resins, fluoropolymers, epoxy resins, acrylic resins, polyimide resins, polyamide resins, polyester resins, polyolefin resins, and substances incorporating fillers into these adhesive materials. From the viewpoint of adhesion and heat resistance, silicone resins, fluoropolymers, acrylic resins, polyimide resins, and substances incorporating fillers into these adhesive materials are preferred; silicone resins, acrylic resins, epoxy resins, and substances incorporating fillers into these materials are more preferred; silicone resins and substances incorporating fillers into silicone resins are even more preferred, but not limited to these. Silicone resins can provide a plasma-resistant structure 1 with excellent stress mitigation and suppression of damage caused by temperature changes. Furthermore, incorporating thermally conductive fillers into silicone resins can improve the heat exchange capacity between the first component 2 and the second component 3, and can suppress damage to the plasma-resistant structure 1 caused by localized overheating. As a result, a long-life plasma-resistant structure 1 can be provided.

[0089] (Sealing material)

[0090] The intermediate component 4 can be a sealing material. Examples of sealing materials include silicone, polyimide, aromatic polyetherketone, fluoropolymers, epoxy resins, polyurethane resins, acrylic resins, elastomers, and substances incorporating fillers into these sealing materials. From the viewpoint of plasma resistance and heat resistance, polyimide, fluoropolymers, epoxy resins, and substances incorporating thermally conductive fillers into fluoropolymers are preferred, but not limited to these. The shape of the sealing material can be ring-shaped (e.g., O-rings), or uncured, cured liquid resin can be cast into any shape to form the sealing material. Substances incorporating fillers into fluoropolymers exhibit excellent durability (plasma resistance, damage suppression), thereby providing a long-life plasma-resistant structure 1. In this case, examples of fillers, from the viewpoint of plasma resistance, include ceramic particles; specifically, oxides, hydroxides, and carbides containing at least one of yttrium, aluminum, zirconium, hafnium, calcium, magnesium, nickel, titanium, and silicon can be included. From the perspective of plasma resistance and insulation, yttrium oxide, aluminum oxide, and aluminum nitride can be cited as examples. This allows for the provision of sealing materials with excellent plasma resistance and insulation. Consequently, long-life plasma-resistant structures can be provided.1

[0091] In addition to sealing, sealing materials can also have other functions. For example, they can provide insulation, thermal insulation, thermal conductivity, and electrical conductivity.

[0092] (Insulation material)

[0093] The intermediate component 4 can be a thermal insulation material. Examples of thermal insulation materials include resin materials and metal materials, but are not limited to these. Examples of resin materials include silicone, polyimide, aromatic polyetherketone, fluororesin, epoxy resin, polyurethane resin, acrylic resin, and elastomers. Examples of metal materials include stainless steel. Materials with voids within these thermal insulation materials (e.g., foams) can also be used, but are not limited to these. This allows for strict thermal management of the plasma-resistant structure 1, suppressing damage caused by overheating. As a result, a long-life plasma-resistant structure 1 can be provided. Furthermore, the thermal insulation material can not only have thermal insulation functions but can also have other functions simultaneously. For example, it can have bonding, insulation, and electrical conductivity.

[0094] (Plasma protective material 5)

[0095] The plasma protective material 5 comprises fibers and is formed using a plasma-resistant material. The plasma protective material 5 is used to protect intermediate components 4, such as resin materials, from the effects of the plasma space, isolating or distancing the resin materials from the plasma space. Through the plasma protective material 5, the path from the plasma space to the intermediate component 4 is blocked, the distance the plasma travels to the intermediate component 4 is increased, and the plasma is deactivated, thereby reducing its impact on the intermediate component 4. When the plasma protective material 5 is made of fibers, voids are formed between and around the fibers. These voids allow it to follow external dimensional changes and mitigate stress (buffering). For example, it can follow dimensional changes in the first component 2 and the second component 3 caused by heating and mitigate the stress generated by these dimensional changes, resulting in a longer lifespan for the plasma-resistant structure 1. Furthermore, when the plasma protective material 5 is formed by incorporating fibers into ceramics or the like, the fibers become the aggregate of the ceramic, increasing the strength of the plasma protective material 5 against stress. As a result, its stress resistance to external dimensional changes is improved, enabling a longer lifespan for the plasma-resistant structure 1.

[0096] As the fiber constituting the plasma protection material 5, inorganic fibers are preferred. Examples of such fibers include at least one of yttrium, aluminum, zirconium, hafnium, calcium, magnesium, nickel, titanium, and silicon. The plasma protection material 5 can be made using oxides, hydroxides, carbides of the above elements, fibers formed by coating the surface of organic fibers with these inorganic compounds, or mixtures of the above materials, but is not limited thereto. In addition, commercially available inorganic fibers include FINEFLEX manufactured by Nichias Corporation, Isowool manufactured by Isolite Industries, Ibiwool manufactured by Ibiden Corporation, Superwool manufactured by Shin-Nippon Chemical Thermo-Ceramics Co., Ltd., Nextel manufactured by 3M Corporation, NS Silica manufactured by Nippon Glass Fiber Industries, Ltd., BelCo Tex manufactured by BelChem Corporation, NITIVY ALF manufactured by NITIVY Corporation, Almax manufactured by Mitsui Mining Materials Co., Ltd., SAFFIL manufactured by Saffi Fibres Co., Ltd., Denka Alsen manufactured by Denki Chemical Co., Ltd., Rubier manufactured by Nichias Corporation, Maftec manufactured by Mitsubishi Chemical Industries, Ltd., Altex manufactured by Sumitomo Chemical Co., Ltd., mode-locked optical fiber manufactured by Nittobo Co., Ltd., and MGMighty manufactured by Nichias Corporation. Wool, E-fiber manufactured by Nippon Rock Wool Industry Co., Ltd., Rock Fiber manufactured by Lapinus Co., Ltd., Nicalon manufactured by Nippon Carbon Co., Ltd., Tyranno Fiber manufactured by Ube Industries Co., Ltd., Naslon manufactured by Nippon Seiki Co., Ltd., Bekipor manufactured by Bekaert Co., Ltd., BOLFUR manufactured by Unitika Co., Ltd., SENCY manufactured by Unitika Co., Ltd., Unitika Glass Fiber manufactured by Unitika Co., Ltd., Nittobo Glass Fiber manufactured by Nittobo Co., Ltd., E-glass manufactured by Nippon Electric Glass Co., Ltd., ARG manufactured by Nippon Electric Glass Co., Ltd., and Alpha Fiber manufactured by Asahi Glass Co., Ltd.

[0097] Plasma protective material 5 is disposed on the outer surface side of the plasma-resistant structure 1 at the end of the intermediate component 4 that does not face the first component 2 and the second component 3. Here, "end" refers to the surface of the intermediate component 4 that does not face the first component 2 and the second component 3 and is opposite to the plasma protective material 5 or the plasma space. The plasma protective material 5 can be disposed on the outer periphery of the intermediate component 4 that does not face the first component 2 and the second component 3, preferably along the outer periphery of the intermediate component 4. Thus, the plasma protective material 5 can cover the portions of the intermediate component 4 that do not face the first component 2 and the second component 3 (e.g., the end, outer surface side, outer periphery, inner surface side, and inner periphery of the intermediate component 4), blocking the path from the plasma space to the intermediate component 4, increasing the distance the plasma travels to the intermediate component 4, and deactivating the plasma, thereby reducing its impact on the intermediate component 4. Preferably, the fiber extension direction of the plasma protective material 5 is along the outer periphery of the intermediate component 4.

[0098] The fibers of the plasma protective material 5 are longer in the extending direction than the outer periphery of the intermediate component 4. The fibers can be wound around the outer periphery of the intermediate component 4, or they can be (tightly) wound (resulting in one or more turns around the intermediate component 4). Here, the plasma protective material 5 can be directly wound onto the intermediate component 4, preferably while applying pressure to the intermediate component 4. This is because, by applying pressure while winding, the gaps (voids) formed between the fibers of the plasma protective material 5 are reduced, and the intermediate component 4 is further blocked from the plasma space. Alternatively, the fibers can also be wound between the first component 2 and the second component 3 (in contact) (i.e., the plasma protective material 5 can also be wound away from the intermediate component 4). This is because, by being sandwiched between the first component 2 and the second component 3, the gaps (voids) formed between the fibers of the plasma protective material 5 are further reduced or eliminated, and the intermediate component 4 is further blocked from the plasma space. As a result, a long-life plasma-resistant structure 1 can be provided.

[0099] Furthermore, in this specification, "fiber" refers to a linear material, and its structure (shape) is not particularly limited. Preferably, the fiber diameter of the plasma protective material 5 is 5 μm-0.2 mm, more preferably 5 μm-0.1 mm. When the average fiber diameter is within the above range, it is preferred from the viewpoint of stress relief and plasma resistance. Although the aspect ratio (length / diameter) of the fiber also depends on the application, it is preferably 1,000-2,200,000, more preferably 28,000-2,200,000, and even more preferably 140,000-1,200,000. This is because there is a tendency that the longer the fiber length (aspect ratio), the better the plasma resistance, durability, and particle resistance can be obtained.

[0100] The structure (shape) of the plasma protective material 5 containing fibers is not particularly limited, and the plasma protective material 5 can be a fiber structure made of fibers. A fiber structure is a material that can be used as a whole by intertwining, twisting, weaving, or bonding multiple fibers together, and the fiber structure has gaps (voids) between the fibers. This ensures stress relief against thermal stress, etc., and provides a long-life plasma-resistant structure 1. Furthermore, without compromising the plasma resistance of the fiber structure, adhesives such as resin can be filled or partially filled into these gaps. This increases the mechanical strength of the fiber structure. As a result, a long-life plasma-resistant structure 1 can be provided. The shape of the fiber structure is not particularly limited, and examples include linear, rope-like, layered, strip-like, sleeve-like, and loop-like structures. The fiber structure can be, for example, twisted yarn, nonwoven fabric, woven fabric, or a mesh structure, and can also be composed of multiple constituent parts (fibers, etc.) with gaps (voids). By using these fiber structures, stress relief against thermal stress, etc., can be ensured, and a long-life plasma-resistant structure 1 can be provided. As for the manufacturing method of these fiber structures, known methods can be used depending on the application. For example, twisted yarn can be manufactured by combining and twisting multiple fibers, and nonwoven fabric can be manufactured by dry or wet methods, but is not limited to these. The "voids" of the plasma protection material 5 are not particularly limited, as long as they can achieve the stress relief and long service life described above. For example, as the plasma protection material 5, a single fiber made of the plasma-resistant material described above can also be wound around the outer periphery of the intermediate component 4. In this case, the voids between the wound fibers can also achieve the effect of following the dimensional changes of the first component 2 and the second component 3 and mitigating the stress caused by the dimensional changes. As a result, a long-life plasma-resistant structure 1 can be provided.

[0101] (The size of the fibers in the fibrous structure)

[0102] The diameter of each fiber in the preferred fiber structure is 5 μm to 0.2 mm, more preferably 5 μm to 0.1 mm. When the average fiber diameter is within the above range, it is preferred from the viewpoint of stress relief and plasma resistance. Furthermore, the aspect ratio of each fiber in the preferred fiber structure is 500 or more, more preferably 1000 or more, and even more preferably 8000 or more. Thus, when each fiber is a long fiber, the stress relief of the plasma protection material 5 is improved, resulting in a long-life plasma-resistant structure 1. Additionally, the "diameter" of the fiber in this specification is the average value of the equivalent diameter derived from calculating the cross-sectional area of ​​any perpendicular section in the fiber's extension direction as photographed under a microscope (e.g., calculated using known software) and the diameter of a circle having the same area as that cross-sectional area (e.g., the average value of 20 fibers). Furthermore, the "length" of the fiber in this specification is, for example, the average length of any 10 fibers in the fiber structure.

[0103] Furthermore, the plasma protective material 5 (fiber structure) preferably comprises fiber bundles. That is, compared to the case containing only fibers, bundled construction improves stress relief, strength, and ease of operation (including placement and removal). The materials and sizes of the fibers in the fiber bundle can be the same or different, but it is preferable that they have the same orientation and orientation and are approximately the same size. There is no particular limitation on the number of bundled fibers, and the thickness of the intermediate component 4 and the diameter of the fibers can be appropriately set. For example, it is preferable that the fiber bundle, which is composed of inorganic fibers, is sandwiched between the first component 2 and the second component 3 (in contact). That is, by being sandwiched between the first component 2 and the second component 3, the gaps (voids) between the fibers of the fiber bundle are compressed and reduced, the intermediate component 4 is isolated from the plasma atmosphere, and the fiber bundle is difficult to detach. By selecting and setting the number of fibers, a long service life of the plasma-resistant structure 1 can be achieved. In addition, in the fiber bundle, it is preferable that the fibers are bonded to each other to a degree that balances shape maintenance and cushioning. When using these fiber structures, a long-life plasma-resistant structure 1 can be provided.

[0104] Preferably, the direction of extension of the fiber structure is also along the outer periphery of the intermediate component 4; that is, preferably, the fiber bundle constituting the plasma protection material 5 also extends along the outer periphery of the intermediate component 4. Therefore, since the fiber structure can be inserted along the direction extending between the first component 2 and the second component 3, the path from the plasma space to the intermediate component 4 is blocked, the distance the plasma travels to the intermediate component 4 becomes longer, the plasma is deactivated, and thus the influence on the intermediate component 4 can be suppressed. Furthermore, it is preferable that the direction of each fiber in the fiber bundle is also along the outer periphery of the intermediate component 4. In this way, by aligning the fiber directions, the fiber bundle serving as the plasma protection material 5 can be uniformly placed between the first component 2 and the second component 3, thus reducing the gaps between the first component 2 and the plasma protection material 5, and between the second component 3 and the plasma protection material 5, improving plasma resistance. As a result, a longer lifespan for the plasma-resistant structure 1 can be achieved.

[0105] Alternatively, the length of the fibrous structure of the plasma protective material 5 in the extending direction may be longer than the outer periphery of the intermediate component 4, and the fibrous structure may be wound around the outer periphery of the intermediate component 4. Figure 3 ).in addition, Figure 3 (A) and (B) are examples of top views and perspective views of the plasma-resistant structure 1 when the plasma protection material 5 is rolled along the outer periphery of the intermediate component 4.

[0106] Furthermore, the fiber bundles contained in the plasma protective material 5 preferably have a twisted shape. If the twisted fibers can move relative to each other within the fiber bundle, a balance between high strength and cushioning can be achieved. Additionally, the high strength of the twisted yarn increases the strength of the plasma protective material 5, making it easier to remove the plasma protective material 5 from the plasma-resistant structure 1. Furthermore, the twisted yarn can also alleviate stress by allowing the fibers in the fiber bundle to disperse. There are no particular limitations on the twisting method; it can be calculated as 5-360 revolutions per meter, preferably in the range of 20-300 revolutions. Within this range, a good balance can be achieved between the strength of the fiber bundle, stress mitigation, and suppression of particle generation during plasma treatment. As a result, a long-life plasma-resistant structure 1 can be provided. Here, "particles" mainly refers to small fragments generated from the plasma-resistant structure 1 during plasma treatment. These particles can become impurities on the retained material W. For example, when the strength of the plasma protective material 5 is low, the fibers may be damaged by plasma treatment and may adhere as particles to the retained material W. In addition, when the intermediate component 4 is not isolated from or moved away from the plasma atmosphere by the plasma protection material 5, the intermediate layer will deteriorate and be damaged by the plasma atmosphere, and may adhere to the object W as particles.

[0107] The diameter of each fiber in the preferred fiber bundle is 5 μm to 0.2 mm, more preferably 5 μm to 0.1 mm, and even more preferably 5 μm to 20 μm. When the average fiber diameter is within the above range, it is preferred from the viewpoint of stress relief and plasma resistance. Furthermore, the aspect ratio of each fiber in the preferred fiber bundle is 500 or more, more preferably 1000 or more, and even more preferably 8000 or more. Thus, when each fiber is a long fiber, the stress relief of the plasma protection material 5 is improved, resulting in a long-life plasma-resistant structure 1. Additionally, the "diameter" of the fiber in this specification is the average value of the equivalent diameter derived from calculating the cross-sectional area of ​​any perpendicular section in the fiber or fiber bundle extension direction as photographed under a microscope (e.g., calculated using known software) and the diameter of a circle having the same area as that cross-sectional area (e.g., the average value of 20 fibers or fiber bundles). Furthermore, the "length" of the fiber bundle in this specification is, for example, the average length of any 10 fibers in the fiber bundle.

[0108] The plasma protection material 5 does not need to be bonded to the first component 2, the second component 3, or the intermediate component 4. For example, the fibrous structure (twisted yarn, mesh, non-woven fabric, metal wire, etc.) that serves as the plasma protection material 5 can be pushed from between the first component 2 and the second component 3 toward the intermediate component 4.

[0109] When the fiber structure 5, which serves as plasma protection material 5, is pushed from between the first component 2 and the second component 3 toward the intermediate component 4, the fiber structure can be compressed and set on the first component 2 and the second component 3 (case 1), or it can be compressed and set from the outer surface side of the intermediate component 4 toward the intermediate component 4 (case 2).

[0110] In an embodiment where the fiber structure is compressed and disposed on the first component 2 and the second component 3 (Case 1), it is possible to exemplify a case where the length between the first component 2 and the second component 3 (i.e., the thickness of the intermediate component 4, hereinafter referred to as "H" for ease of explanation) is greater than the diameter (hereinafter referred to as "D") of the plasma protective material 5 (fiber structure, fiber bundle) in the state where it is not disposed between the first component 2 and the second component 3 (before or when not disposed). In this disclosure, it is preferable that the plasma protective material 5 be configured to be the length between the first component 2 and the second component 3 having a length H that is smaller than the diameter D of the plasma protective material 5 (D>H). As a result, when the fiber structure is disposed between the first component 2 and the second component 3, the gaps (voids) formed between the fibers in the fiber structure are reduced, and the intermediate component 4 is isolated from or moved away from the plasma atmosphere, thus achieving both stress relief and plasma resistance. As a result, a long-life plasma-resistant structure 1 can be provided. Furthermore, the diameter D of the fiber structure can be defined as the diameter of the smallest circumscribed circle of the fiber structure in a cross-sectional view orthogonal to the extension direction of the fiber structure when it is not positioned between the first component 2 and the second component 3. Figure 8 The circle in the diagram shows an example of the smallest circumcircle of a fiber bundle (fiber structure). Figure 8 In the example, the diameter D of the fiber structure is 269 μm and 244 μm. In this unset state, the area ratio of the fiber structure (area occupied by the fiber in the minimum circumcircle / area of ​​the minimum circumcircle) is 63%, preferably 20-80%, more preferably 30-70%. Within this range, it can be set between the first component 2 and the second component 3, and in the set state, the gap (void) formed between the fibers in the fiber structure is reduced, and the intermediate component 4 is isolated from or moved away from the plasma atmosphere. As a result, a long-life plasma-resistant structure 1 can be provided. In addition, the area ratio of the fiber structure in this disclosure is the average value of the area ratio calculated by taking an arbitrary vertical cross-section of the fiber structure in the extension direction of a microscope and calculating based on the area occupied by the fiber in the minimum circumcircle and the area of ​​the minimum circumcircle (e.g., calculated by known software), for example, the average value of 20 cross-sectional images.

[0111] A cross-sectional image of the electrostatic chuck (plasma-resistant structure 1) as a specific example of case 1 is shown below. Figure 9A fiber bundle (fiber structure) is wound around the outer periphery of an intermediate component 4 disposed between the first component 2 and the second component 3. In this example, the length H (thickness of the intermediate component 4) between the first component 2 and the second component 3 is 100 μm, and the diameter of the fiber is 7 μm. Additionally, one of the fiber structures in its non-positioned state (on the right) has a diameter D of 150 μm, occupying 53% of the area. This fiber structure is wound four times around the outer periphery of the intermediate component 4. That is, the fiber structure is disposed between the first component 2 and the second component 3, which have a length H smaller than the diameter D of the fiber structure. This reduces the gaps between the fibers in the fiber structure, and the intermediate component 4 is isolated from or moved away from the plasma atmosphere, achieving both buffering and followability. As a result, a long-life plasma-resistant structure 1 can be provided.

[0112] In this disclosure, the ratio of (diameter D of the fiber structure) to (length H between the first component 2 and the second component 3) is preferably 1 or more, more preferably 1.2 or more, and even more preferably 1.5 or more. That is, the diameter D of the fiber structure is preferably deformable to 83% of its length when compressed perpendicularly towards its center (center of gravity), more preferably to 67% of its length. This provides good cushioning and follow-through properties, and by employing this plasma-resistant structure 1, the gaps between the fibers in the fiber structure are reduced, allowing the intermediate component 4 to be isolated from or moved away from the plasma atmosphere. As a result, a long-life plasma-resistant structure 1 can be provided. Furthermore, Figure 9 The D / H ratio is 1.5.

[0113] In embodiment 2, where the fiber structure is compressed and arranged from the outer surface side of the intermediate member 4 toward the intermediate member 4, it is possible to exemplify a case where multiple fiber structures are pushed in overlapping manner along the outer periphery of the intermediate member 4. A cross-sectional photograph of an electrostatic chuck (plasma-resistant structure 1) as a specific example of this embodiment is shown below. Figure 10 A fiber bundle (fiber structure) is wound around the outer periphery of an intermediate component 4 disposed between the first component 2 and the second component 3. In this example, the length H (thickness of the intermediate component 4) between the first component 2 and the second component 3 is 565 μm, and the diameter of the fiber is 7 μm. Furthermore, the diameter D of the fiber structure in its unpositioned state is 150 μm, and its area is 46%. This fiber structure is wound 32 times around the outer periphery of the intermediate component 4. That is, the fiber structure is disposed between the first component 2 and the second component 3, having a length H greater than the diameter D of the fiber structure, and... Figure 9In contrast, more fiber structures overlap from the outer surface of the intermediate component 4 toward the intermediate component 4. This reduces the gaps between the fibers in the fiber structures, and the intermediate component 4 is isolated from or moved away from the plasma atmosphere. As a result, a long-life plasma-resistant structure 1 can be provided.

[0114] Furthermore, in a cross-sectional view orthogonal to the extension direction of the fiber structure provided in the plasma-resistant structure 1, it is preferable that at least a portion of the intermediate component 4 is isolated from or moved away from the plasma atmosphere by the area where fibers are densely present. This allows for the provision of a long-life plasma-resistant structure 1. Specifically, the fiber structure provided between the first component 2 and the second component 3 is located in any region of (length H between the first component 2 and the second component 3) x (length 20 μm in the direction orthogonal to length H). Figure 10 In the region (referred to as "Region A"), a occupancy rate of 50% to 95% is preferred. More preferably, 60% to 95% is preferred, and even more preferably, 70% to 90% is preferred. This allows for the isolation or removal of the intermediate component 4 from the plasma atmosphere while ensuring stress relief of the fiber structure, resulting in a long-life plasma-resistant structure 1. Furthermore, in any region (referred to as "Region B") within the length H between the first component 2 and the second component 3 x (80 μm in the direction orthogonal to length H), a occupancy rate of 50% to 95% is preferred. More preferably, 60% to 95% is preferred, and even more preferably, 70% to 90% is preferred. In any region (referred to as "Region C") within the length H between the first component 2 and the second component 3 x (160 μm in the direction orthogonal to length H), a occupancy rate of 50% to 95% is preferred. More preferably, 60% to 95% is preferred, and even more preferably, 70% to 90% is preferred. Therefore, by widening the area where fibers are densely packed, the intermediate component 4 is isolated from or moved away from the plasma atmosphere while ensuring stress relief of the fiber structure, thereby further isolating the intermediate component 4 from the plasma atmosphere. As a result, a long-life plasma-resistant structure 1 can be provided.

[0115] Figure 10 A specific example is shown. It is a cross-sectional image showing an example where the fiber bundle (fiber structure) is compressed and positioned from the outer surface side of the intermediate component 4 toward the intermediate component 4. In this case, the area occupied by the fiber structure in region A is 82%. Therefore, while ensuring stress relief of the fiber structure, the intermediate component 4 can be isolated from or moved away from the plasma atmosphere, resulting in a long-life plasma-resistant structure 1. Furthermore, in Figure 9 In this case, the area ratio of fiber structures in region A is also 76% (compared to 53% before installation). Furthermore, in this... Figure 9 In the example (Case 1), a state is shown where the fibrous structure on the middle component 4 side is dense and the outer surface side is sparse. That is, the fibrous structure on the middle component 4 side has a larger occupancy than the fibrous structure on the outer surface side. This is mainly because the fibrous structure closer to the middle component 4 side is more compressed. In this case, it is also possible to move the middle component away from the plasma atmosphere, resulting in a long-life plasma-resistant structure 1.

[0116] Figure 11 Here is another specific example. In this case, the length H (thickness of the intermediate component 4) between the first component 2 and the second component 3 is 70 μm, the fiber diameter of the fiber structure is 7 μm, and the number of turns (winding loops) is 16. Furthermore, the diameter D of the fiber structure in its un-set state is 150 μm, with a floor area ratio of 51%. The floor area ratio of the fiber structure in region A is 83%. That is to say, in this case, it is also possible to ensure the stress relief of the fiber structure while isolating or moving the intermediate component 4 away from the plasma atmosphere, resulting in a long-life plasma-resistant structure 1.

[0117] There are no particular restrictions on the shape of the fiber structure or the entangled fiber bundle that overlaps between the first component 2 and the second component 3; it can be spherical, elliptical, crescent-shaped, rectangular, etc.

[0118] Furthermore, the outermost surface of the plasma protection material 5 (fiber structure) preferably disposed on the outer surface side of the intermediate component 4 is fixed. This suppresses the scattering and breakage of the fiber structure and maintains the compressed state of the gaps (voids) formed between the fibers within the fiber structure. As a result, a long-life plasma-resistant structure can be provided. The fixing method is not particularly limited, and examples include fiber-based fixing (knotting, wrapping, hooking, etc.), resin-based fixing, and fixing based on inorganic materials. As a specific example of fixing with resin, a reactive silicone resin (e.g., Shin-Etsu Chemical Industry Co., Ltd., KE-103) can be coated onto the outermost surface of the fiber structure and allowed to cure at room temperature for fixing. Alternatively, the outermost surface of the fiber structure can be covered with resin for fixing. For example, the fiber structure can be fixed by inserting it into a heat-shrinkable tube (Hagitec Corporation, PTFE tube, SLW-AWG 34HS) and heating it to shrink it. As a specific example of fixation using inorganic materials, the fiber structure can be fixed by applying a heated and molten inorganic material (e.g., solder, glass, etc.) or a solution containing inorganic substances (organometallic compounds, etc.) to the outermost surface of the fiber structure, and then allowing it to cool and solidify, or dry and solidify, respectively. This also helps to suppress particles generated from the fiber structure.

[0119] Preferably, the plasma protective material 5 is separated from the intermediate component 4 in at least a portion, more preferably separated in one portion and bonded in another portion (e.g., in...). Figure 5 In the electrostatic chuck 21 with a plasma-resistant structure shown, the side of the plasma protective material 25 that contacts the first component 22 and the side that contacts the second component 23 is separated from the outer peripheral portion 24a of the bonding layer 24, which serves as an intermediate component. If the plasma protective material 5 were to completely separate from the intermediate component 4, it might detach; however, by separating a portion and adhering to the other, stress mitigation can be improved. As a result, a long-life plasma-resistant structure 1 can be provided.

[0120] Hereinafter, other embodiments of the present disclosure will be described. For components that are the same as or similar to those of plasma-resistant structure 1, reference numerals will be added with 10, 20, 30, 40, etc. (i.e., for example, Figure 4 The plasma protection material 15 is composed of the same or similar components as the plasma protection material 5. Furthermore, as a particularly preferred embodiment, even the same or similar components are sometimes given different names (e.g., Figure 6 The edge ring portions 42 and 43 correspond to the first component 2 and the second component 3, respectively, and can also be formed using plasma-resistant materials, but given different names. These descriptions are omitted as appropriate.

[0121] [Electrostatic Chuck 11]

[0122] According to this disclosure, the following are provided: Figure 4 The electrostatic chuck 11 shown has a plasma-resistant structure 1. That is, in Figure 4 In this embodiment, the plasma-resistant structure 1 can be configured as a holding member 12 for holding the object W and a base 13 for holding the holding member 12. More specifically, the electrostatic chuck 11 includes a holding member 12 for holding the object W, a base 13 for holding the holding member 12, a bonding layer 14 disposed between the holding member 12 and the base 13, and a plasma protection material 15 containing fibers, which is disposed on the outer surface side of the electrostatic chuck 11 at the end of the bonding layer 14. As described later, the plasma protection material 15 is plasma-resistant, and even in areas other than the bonding layer 14 (e.g., heat insulation layer, heat transfer layer, conductive layer, insulating layer, O-ring, etc.), the plasma protection material 15 can be disposed at a desired location on the electrostatic chuck 11.

[0123] (Retaining component 12)

[0124] The holding member 12 is a component used to adsorb and hold the object W. The shape of the holding member 12 is not limited; it can be a circular plate or a quadrilateral shape depending on the shape of the object W. The size of the holding member 12 can also be appropriately set according to the object W. Furthermore, the "object W" is not limited; for example, it may include wafers (silicon wafers, quartz wafers, SiC wafers, etc.), flat panel display (FPD) panels or substrates, metal parts, film parts, resin parts (automotive interior parts, etc.), glass parts, and other workpieces.

[0125] Examples of substrates that can be used as the retaining member 12 include ceramic substrates (alumina, aluminum nitride, yttrium oxide, zirconium oxide, silicon carbide, etc.), resin substrates, and metal substrates made of aluminum or stainless steel. Furthermore, from the viewpoint of plasma resistance and heat resistance, examples of resin substrates include polyimide, polyamide, polyamide-imide, aromatic polyetherketone, and fluoropolymers. The retaining member 12 can also be a substrate composed of two or more materials. From the viewpoint of plasma resistance and heat resistance, the retaining member 12 is preferably a ceramic substrate, a resin substrate, or a composite substrate made of ceramic and resin.

[0126] The thickness of the retaining member 12 is not particularly limited and can be set in the range of 0.2mm to 7mm. Furthermore, as described later, if an internal electrode is provided in the retaining member 12, the thickness of the retaining member 12 can be set in the range of 3mm to 10mm.

[0127] Alternatively, multiple protrusions can be provided on the surface of the holding member 12 on the side holding the object W. By holding (adsorbing) the object W on the top surface of these protrusions, the contact area between the holding member 12 and the object W can be reduced. As a result, the quality of the object W can be maintained, and the lifespan of the electrostatic chuck 11 can be extended. There are no particular limitations on the number, arrangement, shape, height, or size of the protrusions. From the viewpoint of maintaining the quality of the object W, it is preferable that the protrusions are disc-shaped or cylindrical, and it is preferable that the top surface of each protrusion is flat. If the shape and height of the protrusions are as described above, the holding (adsorption) of the object W is stable, the quality of the object W can be well maintained, and a longer lifespan electrostatic chuck 11 can be provided.

[0128] (Abutment 13)

[0129] The base 13 is a component that holds the retaining member 12 and also has a cooling function. The shape, material, thickness, etc. of the base 13 can be appropriately designed and modified according to the application. For example, ceramics, metals, and materials combining the two can be used as materials for the base 13. Examples of ceramics include alumina, aluminum nitride, yttrium oxide, and silicon carbide, and examples of metals include aluminum and stainless steel, but are not limited to these.

[0130] (Joint layer 14)

[0131] The bonding layer 14 is a component that bonds the holding member 12, the base 13, and other components. The thickness (height) of the bonding layer 14 is not particularly limited, but is preferably 20 μm to 1000 μm, more preferably 50 μm to 800 μm, and even more preferably 100 μm to 500 μm. If the thickness of the bonding layer 14 is within this range, the bonding layer 14 can withstand the stress caused by dimensional changes in the holding member 12 and the base 13 during heating, and can limit the contact between the bonding layer 14 and the plasma atmosphere during the plasma processing step. As a result, a longer-life electrostatic chuck 11 can be provided.

[0132] Examples of materials that can be used as the bonding layer 14 include metals and adhesive materials (resins). From a workability perspective, solders (silver solder, copper solder, copper alloy solder, aluminum solder, nickel solder, active silver solder, titanium solder, solder materials, etc.) can be used as the metal, but are not limited to these. The solder can be selected based on the properties (thermal expansion, thermal conductivity, etc.) of the retaining member 12 and the base 13 being bonded. Furthermore, examples of adhesive materials include thermoplastic elastomers, thermosetting elastomers, epoxy resins, polyurethane resins, polyester resins, polyimide resins, polyamide resins, fluoropolymers, acrylic resins, silicone resins, polyurethane resins, and substances incorporating fillers into these materials. From the viewpoints of adhesion and heat resistance, silicone resins, acrylic resins, epoxy resins, and substances incorporating fillers into these materials are preferred; silicone resins and substances incorporating fillers into silicone resins are more preferred.

[0133] The bonding layer 14 may include a thermally conductive filler. By including a thermally conductive filler, both adhesion and thermal conductivity can be achieved, thus suppressing thermal degradation of the bonding layer 14. As a result, a long-life electrostatic chuck 11 can be provided. There are no particular limitations on the thermally conductive filler, and examples include metals, alumina, aluminum nitride, silicon carbide, boron nitride, carbon black, carbon nanotubes, diamond, etc. There are also no particular limitations on the amount or shape of the thermally conductive filler.

[0134] According to this disclosure, it can also provide Figure 5 The electrostatic chuck 21 is shown. Different bonding layers 24 can be used depending on their position in the surface direction. For example, different types of materials can be used for the central portion 24b and the outer peripheral portion 24a of the bonding layer 24. Figure 5 It can withstand the stresses that prevent the dimensional changes of component 22 and base 23 during heating.

[0135] (Plasma protective material 15)

[0136] The plasma protection material 15 is a component used to protect the bonding layer 14 by isolating or keeping it away from the plasma atmosphere, and is preferably disposed along the outer periphery of the bonding layer 14.

[0137] The plasma protection material 15 can also be a combination of different materials. The plasma protection material 15 can also be the aforementioned twisted yarn or other fiber structure.

[0138] (Protective materials)

[0139] The electrostatic chuck 11 may further include a protective material (not shown) disposed along the outer periphery of the plasma protection material 15. This protective material can improve the strength of the plasma protection material 15 and suppress particles generated from the plasma protection material 15. Additionally, the protective material can also fix and hold the plasma protection material 15. For example, when the plasma protection material 15 is wound along the outer periphery of the bonding layer 14, a protective material with a stretchable elasticity can be provided to fix the end portion of the plasma protection material 15. Thus, when the plasma protection material 15 is mounted and fixed to the bonding layer 14 by the protective material without being wound along the outer periphery of the bonding layer 14, the plasma protection material 15 can be installed and removed without unwinding it from the electrostatic chuck 11. Furthermore, to alleviate stress, it is preferable that at least a portion of the protective material is separated from the plasma protection material 15.

[0140] As the protective material, organic materials such as resins can be used to maintain the fixed plasma protective material 15. Examples of resins include silicone resins, fluoropolymers, epoxy resins, polyimide resins, and acrylic resins. In addition, to protect the bonding layer 14 and the plasma protective material 15, plasma-resistant materials can be used, and alumina, silicon carbide, and metal oxides are particularly preferred.

[0141] In addition, protective materials can be formed by sintering after coating with a paste containing inorganic particles, a metal-organic compound solution, or a metal complex solution, or by thermally spraying inorganic materials.

[0142] (other)

[0143] In the electrostatic chuck 11 of this embodiment, in order to apply a voltage to generate an electrostatic force (Coulomb force) to attract the object W to be held, an internal electrode (not shown) can be provided in the holding member 12. Alternatively, such an internal electrode can be provided in the base 13.

[0144] As an internal electrode, it can be made of a conductive material that exhibits electrostatic attraction when a voltage is applied, and there are no particular limitations. For example, a thin film made of metals such as copper, aluminum, gold, silver, platinum, chromium, nickel, and tungsten is preferred as an internal electrode, as is a thin film made of at least two metals selected from said metals. It can also be a ceramic material containing this conductive material. Examples of such conductive thin films include those formed by vapor deposition, electroplating, sputtering, spraying, etc., and those formed by coating a conductive paste and drying. Specifically, examples include metal foils such as copper foil, aluminum foil, nickel foil, and stainless steel foil.

[0145] Furthermore, it is preferable that the outermost periphery of the retaining component 12 is located outside the outermost point of the plasma protection material 15 (or the protective material), and more preferably, the outermost periphery of the base 13 is also located outside the outermost point of the plasma protection material 15 (or the protective material). Figure 4 This is because the plasma protective material 15 is protected against degradation caused by plasma. Furthermore, if the outermost periphery of the component 12 is positioned further outward than the outermost periphery of the base 13, the base 13 will not interact with the edge ring 41 used with the electrostatic chuck 11. Figure 6 , 7 It is preferred because it avoids interference from other components such as ( ).

[0146] (Manufacturing method and application of electrostatic chuck 11)

[0147] The electrostatic chuck 11 can be manufactured, for example, in the following manner. First, a retaining member 12 and a base 13 are prepared. At this time, as described above, a metal such as copper is patterned on either the retaining member 12 or the base 13 to form an internal electrode. Next, the retaining member 12 and the base 13 are joined by means of a bonding layer 14. Up to this point, this is also performed in conventional electrostatic chuck manufacturing methods. In conventional electrostatic chucks, after the retaining member and the base are joined by means of a bonding layer, an O-ring or adhesive (elastomer, acrylic rubber, silicone rubber, fluororubber, thermosetting resin, etc.) is provided. In contrast, in the embodiment of this disclosure, the aforementioned plasma protection material 15 is provided on the outer surface side of the electrostatic chuck 11 at the end of the bonding layer 14. In addition, a protective material ( Figure 4 ).

[0148] The electrostatic chuck 11 of this embodiment attracts the held object W by applying a voltage to an internal electrode embedded in the holding member 12 or the base 13, thereby generating a Coulomb force. For example, in dry etching or CVD processes in semiconductor manufacturing, the electrostatic chuck 11 can be used to attract wafers (held objects W). In particular, in apparatuses and methods using plasma, even if the holding member 12 and the base 13 expand due to high temperatures (e.g., 250°C) caused by plasma irradiation, for example, if the plasma protection material 5 has an inorganic fiber structure, the gaps between the inorganic fibers can absorb the stress caused by the difference in expansion and contraction between the holding member 12 and the base 13, resulting in a long lifespan for the electrostatic chuck 11. Furthermore, when the plasma protection material 15 is constructed by incorporating the aforementioned fibers into ceramics or the like, the fibers become the aggregate of the ceramic, increasing the stress resistance of the plasma protection material 15. As a result, the stress resistance to external dimensional changes is improved, enabling a long lifespan for the electrostatic chuck 11.

[0149] Furthermore, the main difference in the manufacturing method of the electrostatic chuck 11 compared to conventional electrostatic chucks lies in whether or not a plasma protection material 15 is provided. Therefore, when repairing conventional electrostatic chucks, the electrostatic chuck 11 disclosed herein can be easily manufactured. Figure 3 ).

[0150] According to this disclosure, it is also possible to provide Figure 12 The electrostatic chuck 31 is shown in (a). The electrostatic chuck 31 may have one or more through portions 36 extending from the base 33 to the top 32a of the holding member 32. The function of the through portion 36 is not particularly limited; it may be a flow path for heat transfer gas to regulate the temperature of the held member W and the holding member 32, or it may be a hole for receiving a lifting pin P that lifts the held member W. Figure 12(b) In these cases, the inner wall 36a of the through-section 36 (electrostatic chuck 31, holding member 32, recess 33a of base 33, inner surface 34b of bonding layer 34) may come into contact with the plasma atmosphere. In this case, a plasma protection material 35 can be provided on the inner surface 34b side of bonding layer 34 in through-section 36 (which is also the outer surface side of electrostatic chuck 31). Preferably, the plasma protection material 35 is provided along the inner surface 34b of bonding layer 34, or it can be provided to extend along the inner surface 34b of bonding layer 34. As a result, the path from the plasma space to the inner surface 34b of bonding layer 34 is blocked, the distance for the plasma to reach the inner surface 34b of bonding layer 34 becomes longer, the plasma is deactivated, and thus the influence on bonding layer 34 can be suppressed. As a result, a long-life electrostatic chuck 31 can be provided. For example, when a cylindrical through-hole 36 extending from the base 33 to the holding member 32 is provided, it is preferable that the plasma protection material 35 is provided along the inner surface 34b of the bonding layer 34. When the through-hole 36 is a flow path for heat transfer gas used to regulate the temperature of the held member W and the holding member 32, the shape of the plasma protection material 35 is not limited as long as it does not impede this function; it can be annular, arc-shaped, or even a gap through which the heat transfer gas passes. Furthermore, when the through-hole 36 is a hole for accommodating the lifting pin P that lifts the held member W, the shape of the plasma protection material 35 is not limited as long as it does not impede this function; it is preferable to be annular, arc-shaped, or the like. Additionally, the plasma protection material 35 can be provided by the following steps: Insert the plasma protection material 35 into the recess 33a provided on the base 33; then, insert the insulating member M into the recess 33a without impeding gas passage; push the plasma protection material 35 upward and fix it to the inner surface 34b side of the bonding layer 34. At this time, the insulating component M and the plasma protection material 35 can also be inserted simultaneously. This method provides a simple manufacturing method and structure without hindering the function of the electrostatic chuck 31, resulting in the manufacture of electrostatic chucks 31 with a longer lifespan.

[0151] Furthermore, the shape of the insulating component M is not particularly limited as long as it does not obstruct gas permeation or the movement of the pin P. A cylindrical, sleeve-shaped, spiral, or porous shape along the through portion 36 is preferred. This balances the durability of the insulating component M with the functionality of the electrostatic chuck 31, resulting in a long-life electrostatic chuck 31. From an insulation perspective, ceramic or resin materials are preferred for the insulating component M. Examples of ceramic materials include oxides, hydroxides, and carbides containing at least one of yttrium, aluminum, zirconium, hafnium, calcium, magnesium, nickel, titanium, and silicon. Specifically, yttrium oxide, aluminum oxide, and aluminum nitride are preferred. This results in good durability of the insulating component M, leading to a long-life electrostatic chuck 31. As for resin materials, examples include polyimide, polyamide, polyamide-imide, aromatic polyetherketone, and fluorinated polymers. From a plasma resistance perspective, fluorinated polymers are preferred, while polyimide is preferred from an insulation perspective. As a result, the insulating component M has good durability, which in turn enables the provision of a long-life electrostatic chuck 31.

[0152] [Edge Ring 41]

[0153] In addition, as one embodiment of this disclosure, the following is provided: Figure 6 The edge ring 41 with a plasma-resistant structure shown in (A) and (B) is shown. Figure 6 (A) and (B) are a perspective view and a cross-sectional view of the edge ring 41, respectively. The edge ring 41 of this disclosure is formed to surround the outer periphery of the electrostatic chuck, and is preferably formed in a ring or arc shape. Furthermore, it is used in a plasma processing step to uniformly plasma process the wafer or other held material W adsorbed on the upper surface of the holding member of the electrostatic chuck. Figure 7 ).exist Figure 6 More specifically, the edge ring 41 includes an edge ring portion 42, an edge ring portion 43, a bonding layer (intermediate component) 44 disposed between the edge ring portion 42 and the edge ring portion 43, and a plasma protection material 45 comprising fibers, the plasma protection material 45 being disposed on the outer surface side of the edge ring 41 within the bonding layer 44. The plasma protection material 45 is resistant to plasma, and the plasma protection material 45 can also be disposed at desired locations on the edge ring 41 outside the bonding layer 44.

[0154] (Edge ring parts 42, 43)

[0155] Edge ring portions 42 and 43 constitute the edge ring 41. Examples of materials for edge ring portions 42 and 43 include semiconductors, conductors, insulators, and combinations of two or more of these materials, but are not limited to these. By setting the desired combination, the dielectric properties can be controlled, and the wafer or other held material adsorbed on the upper surface of the holding member of the electrostatic chuck can be uniformly plasma-treated. As a result, a long-life edge ring 41 can be provided. The shapes of the edge ring portions 42 and 43 and the bonding layer 44 are not particularly limited, but annular or arc-shaped are preferred. This allows for more effective protection of the bonding layer 44 from the plasma atmosphere, resulting in a long-life edge ring 41.

[0156] (Joint layer 44)

[0157] The bonding layer 44 is a component that joins the various parts, such as the edge ring portion 42 and the edge ring portion 43. The thickness (height) of the bonding layer 44 is not particularly limited, but is preferably 20 μm-1000 μm, more preferably 50 μm-800 μm, and even more preferably 100 μm-500 μm. If the thickness of the bonding layer 44 is within this range, the bonding layer 44 can withstand the stress caused by the dimensional changes of the edge ring portion 42 and the edge ring portion 43 during heating, and can limit the contact between the bonding layer 44 and the plasma atmosphere during the plasma processing step. As a result, an edge ring 41 with a longer lifespan can be provided.

[0158] The same materials as those used for the bonding layer 14 and plasma protection material 15 can be used as the bonding layer 44 and plasma protection material 45 described above. Alternatively, a protective material can be provided in the edge ring 41.

[0159] (Manufacturing method and application of edge ring 41)

[0160] The edge ring 41 can be manufactured, for example, by the following method. First, edge ring portion 42 and edge ring portion 43 are prepared. At this time, as described above, edge ring portion 42 and edge ring portion 43 are joined by bonding layer 44. Up to this point, this is also done in conventional edge ring manufacturing methods. In conventional edge rings, after edge ring portion 42 and edge ring portion 43 are joined by bonding layer, an O-ring or adhesive (elastomer, acrylic rubber, silicone rubber, fluororubber, thermosetting resin, etc.) is provided. In contrast, in the embodiment of this disclosure, the plasma protection material 45 described above is provided on the outer surface side of edge ring 41 at the end of bonding layer 44. In addition, a protective material (not shown) is appropriately provided along the outer periphery of plasma protection material 45.

[0161] As described above, the edge ring 41 of this embodiment has a long lifespan. Furthermore, in plasma-using apparatuses and methods, even if the edge ring portions 42 and 43 expand due to high temperatures caused by plasma irradiation, for example, when the plasma protective material 45 has an inorganic fiber structure, the gaps between the inorganic fibers can absorb the stress caused by the difference in expansion and contraction between the edge ring portions 42 and 43, resulting in a long lifespan for the edge ring 41. Additionally, when the plasma protective material 45 is constructed by incorporating the aforementioned fibers into ceramics or the like, the fibers become the aggregate of the ceramic, increasing the stress resistance of the plasma protective material 45. As a result, the stress resistance to external dimensional changes is improved, enabling a long lifespan for the edge ring 41.

[0162] Furthermore, the difference in the manufacturing method of edge ring 41 compared to conventional edge rings is mainly in whether or not plasma protection material 45 is provided. Therefore, the edge ring 41 disclosed herein can be easily manufactured when repairing conventional electrostatic chucks.

[0163] [Components for plasma processing devices]

[0164] Although not illustrated, as one embodiment of this disclosure, a component for a plasma processing apparatus having a plasma-resistant structure can be provided. In a plasma processing apparatus, since it is exposed to a plasma atmosphere, components such as the housing and internal parts of the apparatus (electrostatic chucks, edge rings, inner walls of the apparatus, etc.) are also required to be plasma-resistant. For example, in plasma processing apparatuses used in semiconductor device manufacturing processes, in order to accommodate the handling of wafers and other workpieces and ensure the internal vacuum state, they are configured to be detachable, and sealing materials such as O-rings are used in the detachment parts. If these detachment parts, etc., have the plasma-resistant structure of this disclosure, the lifespan of the plasma processing apparatus can be extended. The "component" for a plasma processing apparatus of this disclosure refers to a component in the plasma processing apparatus having the plasma-resistant structure of this disclosure. Examples include the housing and detachment parts. Alternatively, the plasma processing apparatus itself may also have the plasma-resistant structure of this disclosure as part of it. That is, as one embodiment of this disclosure, a plasma processing apparatus having a plasma-resistant structure can also be provided.

[0165] In the event of cracks in the plasma-resistant wall of a plasma processing apparatus, the wall can be used as a first component 2 and a second component 3. A plasma protective material 5 and a filler material or adhesive, serving as an intermediate component 4, can be inserted into the crack between the first component 2 and the second component 3 (so that the plasma protective material 5 adheres to the first component 2 and the second component 3). In this way, the plasma protective material 5 disclosed herein can also be used as a repair material.

[0166] (Manufacturing and repair methods for components used in plasma processing devices)

[0167] A plasma treatment device component (plasma-resistant structure 1) can be manufactured, for example, as follows. First, a first component 2 and a second component 3 are prepared. At this time, as described above, an intermediate component 4 is disposed between the first component 2 and the second component 3. Up to this point, this is also performed in conventional methods for manufacturing plasma treatment device components. In conventional plasma treatment device components, after the first component and the second component are joined by means of a bonding layer, an O-ring or adhesive (elastomer, acrylic rubber, silicone rubber, fluororubber, thermosetting resin, etc.) is provided. In contrast, in the embodiment of this disclosure, a plasma protective material 5, as described above, is provided on the outer surface side of the plasma treatment device component at the end of the intermediate component 4. For example, the plasma protective material 5 can be provided by winding a fiber structure having fibers along the outer periphery of the intermediate component 4. In addition, a protective material (not shown) is appropriately provided along the outer periphery of the plasma protective material 5. The repair method for the plasma treatment device component (plasma-resistant structure 1) is the same as the manufacturing method for the plasma treatment device component, including the step of winding the fiber structure along the outer periphery of the intermediate component.

[0168] The plasma-resistant structure 1, electrostatic chuck 11, edge ring 41, and plasma processing apparatus components of this embodiment, constituted by the above structure, include a first component 2, a second component 3, an intermediate component 4 disposed between the first component 2 and the second component 3, and a plasma protective material 5 containing fibers. At least one of the first component 2 and the second component 3 has plasma resistance, and the plasma protective material 5 containing fibers is disposed on the outer surface side of the plasma-resistant structure 1 at the end of the intermediate component 4.

[0169] Furthermore, as one embodiment of this disclosure, the fiber structure has fibers, and in a plasma-resistant structure 1 having a first component 2, a second component 3, and an intermediate component 4 disposed between the first component 2 and the second component 3, the fiber structure is disposed along the outer periphery of the intermediate component 4.

[0170] In addition, according to the method for manufacturing plasma-resistant structure 1 as an embodiment of the present disclosure, the method includes a step of disposing an intermediate component between the first component 2 and the second component 3 and a step of winding a fiber structure along the outer periphery of the intermediate component 4.

[0171] In addition, according to a repair method for a component of a plasma processing apparatus as an embodiment of the present disclosure, the component of the plasma processing apparatus includes a first component 2, a second component 3, and an intermediate component 4 disposed between the first component 2 and the second component 3. The repair method includes a step of winding a fibrous structure having fibers along the outer periphery of the intermediate component 4.

[0172] As described above, in the plasma-resistant structure 1, the plasma protection material 5 and the first component 2, among others, possess plasma resistance, thus achieving a long service life for the intermediate component 4 and the plasma-resistant structure 1. Furthermore, the pores provided by the plasma protection material 5 allow it to adapt to changes in the dimensions of the holding component 12 and the base 13, mitigating stress and further extending the service life of the electrostatic chuck 11. Additionally, when the plasma protection material 5 is constructed by incorporating fibers into ceramics or the like, the fibers become the aggregate of the ceramic, increasing the stress resistance of the plasma protection material 5. For example, this improves its stress tolerance to changes in the dimensions of the holding component 12 and the base 13, thereby extending the service life of the electrostatic chuck 11.

[0173] Furthermore, in the plasma-resistant structure 1, the electrostatic chuck 11, the edge ring 41, and the components for the plasma processing apparatus, the fiber structure, the manufacturing method of the plasma-resistant structure 1, and the repair method of the components for the plasma processing apparatus in this embodiment, the plasma protective material 5 containing fibers can be disposed on the outer periphery of the intermediate component 4. Additionally, the direction of fiber extension can be along the outer periphery of the intermediate component 4.

[0174] Furthermore, in the plasma-resistant structure 1, the electrostatic chuck 11, the edge ring 41, and the components for the plasma processing apparatus, the fiber structure, the manufacturing method of the plasma-resistant structure 1, and the repair method of the components for the plasma processing apparatus in this embodiment, the plasma protection material 5 containing fibers may include a fiber structure made of fibers. In other words, the fiber structure may also be made of the same plasma-resistant material as the plasma protection material 5.

[0175] Furthermore, in the plasma-resistant structure 1, the electrostatic chuck 11, the edge ring 41, and the components for the plasma processing apparatus in this embodiment, the direction in which the fiber structure extends can be along the outer periphery of the intermediate component 4.

[0176] Furthermore, in the plasma-resistant structure 1, the electrostatic chuck 11, the edge ring 41, and the components for the plasma processing apparatus, the fiber structure, the manufacturing method of the plasma-resistant structure 1, and the repair method of the components for the plasma processing apparatus in this embodiment, the intermediate component 4 may be a bonding layer.

[0177] Furthermore, in the plasma-resistant structure 1, the electrostatic chuck 11, the edge ring and the component for the plasma processing apparatus, the fiber structure, the manufacturing method of the plasma-resistant structure 1, and the repair method of the component for the plasma processing apparatus in this embodiment, the length of the fiber in the extension direction can be longer than the outer periphery of the intermediate component 4, and the fiber can be wound along the outer periphery of the intermediate component 4.

[0178] Furthermore, in the plasma-resistant structure 1, the electrostatic chuck 11, the edge ring 41, and the components for the plasma processing apparatus, the fiber structure, the manufacturing method of the plasma-resistant structure 1, and the repair method of the components for the plasma processing apparatus in this embodiment, the length of the fiber structure in the extension direction may be longer than the outer periphery of the intermediate component 4, and the fiber structure may be wound along the outer periphery of the intermediate component 4.

[0179] Furthermore, in the plasma-resistant structure 1, the electrostatic chuck 11, the edge ring 41, and the components for the plasma processing apparatus, the fiber structure, the manufacturing method of the plasma-resistant structure 1, and the repair method of the components for the plasma processing apparatus in this embodiment, the fiber can be an inorganic fiber.

[0180] Furthermore, in the plasma-resistant structure 1, the electrostatic chuck 11, the edge ring 41, and the components for the plasma treatment apparatus, the fiber structure, the manufacturing method of the plasma-resistant structure 1, and the repair method of the components for the plasma treatment apparatus in this embodiment, the fiber structure may include at least one of twisted yarn, nonwoven fabric, mesh, or woven fabric.

[0181] In addition, in the electrostatic chuck 11 of this embodiment, the first component 2 can be configured as a holding component 12 for holding the object being held, and the second component 3 can be configured as a base 13 for holding the holding component 12.

[0182] In addition, in the electrostatic chuck 11 of this embodiment, the outermost periphery of the holding member 12 can be located outside the outermost point of the plasma protection material 5, and the outermost periphery of the base 13 can be located outside the outermost point of the plasma protection material 5.

[0183] Furthermore, the plasma-resistant structure 1, the electrostatic chuck 11, the edge ring 41, the components for the plasma processing apparatus, the fiber structure, the manufacturing method of the plasma-resistant structure 1, and the repair method of the components for the plasma processing apparatus in this embodiment are not limited to the above-described methods and combinations.

[0184] For example, the internal electrode provided in the retaining member 12 or the base 13 can be not only one, but also two.

[0185] For example, electrodes can be disposed in the edge ring portion 42 or inside the edge ring portion 42.

[0186] For example, in addition to edge ring portion 42 and edge ring portion 43, edge ring 41 may further have one or more components, intermediate component 4 may be arranged between these components, and plasma protective material 5 may be provided on the outer periphery of intermediate component 4.

[0187] The present disclosure will now be described in more detail using examples and comparative examples.

[0188] [Manufacturing method of electrostatic chuck]

[0189] (Example 1)

[0190] An electrostatic chuck-shaped plasma-resistant structure (hereinafter referred to as an electrostatic chuck) was fabricated in the manner shown in Table 1. Specifically, a silicone adhesive (intermediate component, bonding layer) was applied to the upper surface of an aluminum base (second component, 296 mm in diameter, 30 mm in thickness) excluding the outer 20 mm width, to a thickness of 0.2 mm. Using this silicone adhesive, an alumina plate (297 mm in diameter, 4 mm in thickness) serving as a retaining component (first component) was bonded to the upper surface of the base. Next, an alumina fiber bundle (plasma protection material) made of alumina fibers, as shown in Table 1, was wound around the outer peripheral end of the silicone adhesive (bonding layer), the alumina plate, and the base, forming a recess (outer periphery of the bonding layer), and fixed between the alumina plate and the base. Then, by using a blowtorch, the endpoints of the alumina fiber bundle were bonded to a portion of the alumina fiber bundle overlapping in position. Furthermore, the alumina fiber bundle was in contact with the bonding layer, and the alumina fiber bundle did not protrude from the outer peripheral end of the base and the alumina plate. Then, the silicone adhesive is allowed to cure in a constant temperature bath set at 120°C for 2 hours to produce an electrostatic chuck.

[0191] (Examples 2 and 3)

[0192] The electrostatic chucks of Examples 2 and 3 are manufactured in the same manner as the electrostatic chuck of Example 1, as shown in Table 1. Instead of being wound in the recess formed by the outer peripheral end of the bonding layer, the alumina plate, and the base, the alumina fiber bundles (fiber lengths of 15 mm or 200 mm) shown in Table 1 are inserted along the entire outer periphery of the bonding layer in a manner where three adjacent bundles are arranged side-by-side and the direction of the alumina fiber bundles extends along the outer periphery of the bonding layer.

[0193] (Example 4-13)

[0194] The electrostatic chucks of Examples 4-13 were manufactured in the same manner as the electrostatic chuck of Example 1, as shown in Table 1. In Table 1, "fiber bundle 1" represents CY-640D manufactured by Ceramic Wool Industries, Ltd., "fiber bundle 2" represents CY-1280D manufactured by Ceramic Wool Industries, Ltd., "fiber bundle 3" represents CT-2560D manufactured by Nitivy Corporation, "fiber bundle 4" represents Naslon 12-100 / 2 manufactured by Nippon Seiki Co., Ltd., and "fiber bundle 5" represents T300-1000 manufactured by Toray Industries, Ltd. (Table 2 is the same).

[0195] (Comparative Example 1)

[0196] The electrostatic chuck of Comparative Example 1 was manufactured in the same manner as the electrostatic chuck of Example 1, as shown in Table 1. Furthermore, silicone adhesive was applied to a thickness of 3.0 mm. As the plasma protection material for Comparative Example 1, a fluororubber O-ring (NOK AS568-277-D, wire diameter 3.5 mm, outer diameter 299 mm, inner diameter 292 mm) was used and inserted into the recess formed by the outer peripheral end of the bonding layer, the alumina plate, and the base.

[0197] (Comparative Example 2)

[0198] The electrostatic chuck of Comparative Example 2 was manufactured in the same manner as the electrostatic chuck of Example 1, as shown in Table 1. In addition, the plasma protection material of Comparative Example 2 was formed by thermally spraying alumina particles (manufactured by FUJIMI, SURPREX AHP50, particle size 45 μm (manufacturer's nominal value)) from the outside of the bonding layer to the recess formed by the outer peripheral end of the bonding layer, the alumina plate, and the base.

[0199] (Example 14)

[0200] The edge ring is manufactured in the manner shown in Table 2. Specifically, a silicone adhesive (intermediate component, bonding layer; Shin-Etsu Chemical Industry Co., Ltd., addition-curing silicone rubber KE-8101) is applied to the surface of the annular alumina plate (first component, outer diameter 340 mm, inner diameter 300 mm, thickness 16 mm) to a thickness of 0.2 mm, covering the surface of the alumina plate except for a 10 mm width around the outer and inner circumferences. An annular aluminum plate (second component) of the same size as this alumina plate is then bonded to the top of the silicone adhesive. Next, a bundle of alumina fibers (plasma protection material) made of alumina fibers, as shown in Table 2, is inserted along the outer and inner circumferences of the bonding layer into the recess formed by the outer and inner ends of the silicone adhesive (bonding layer), the alumina plate, and the aluminum plate. Then, by firing with a blowtorch, the ends of the alumina fiber bundles are bonded to a portion of the overlapping alumina fiber bundles. In addition, the alumina fiber bundles are in contact with the bonding layer, and the alumina fiber bundles do not protrude from the outer or inner periphery of the alumina plate and the aluminum plate. Then, the edge ring is formed by allowing it to cure in a constant temperature bath set to 120°C for 2 hours.

[0201] (Examples 15 and 16)

[0202] The edge rings of Examples 15 and 16 are manufactured in the same manner as the edge ring of Example 14, as shown in Table 2. Furthermore, for the plasma protection material, instead of inserting alumina fiber bundles made of alumina fibers into the outer and inner periphery ends of the bonding layer, the alumina fiber bundles shown in Table 2 are inserted along the entire area of ​​the outer and inner periphery ends of the bonding layer in a manner where three bundles are arranged side-by-side and the direction of the alumina fiber bundles extends along the outer and inner periphery of the bonding layer.

[0203] (Examples 17-22)

[0204] The edge rings of Examples 17-22 are made in the same manner as the edge ring of Example 14, as shown in Table 2.

[0205] (Comparative Example 3)

[0206] The edge ring of Comparative Example 3 was manufactured in the same manner as the edge ring of Example 14, as shown in Table 2. In Comparative Example 3, the silicone adhesive was applied to a thickness of 3.0 mm as a plasma protection material. A fluororubber O-ring (NOK AS568-279-D, wire diameter 3.5 mm, outer diameter 337 mm, inner diameter 330 mm) was used on the outer periphery of the silicone adhesive, and a fluororubber O-ring (NOK AS568-278-D, wire diameter 3.5 mm, outer diameter 311 mm, inner diameter 304 mm) was used on the inner periphery. These O-rings were inserted into the recess formed by the outer and inner periphery ends of the silicone adhesive (bonding layer), the alumina plate, and the aluminum plate.

[0207] (Comparative Example 4)

[0208] The edge ring of Comparative Example 4 was fabricated in the same manner as the edge ring of Example 14, as shown in Table 2. Furthermore, the plasma protective material of Comparative Example 4 was formed by plasma thermal spraying alumina particles (FUJIMI SURPREX AHP50, particle size 45 μm (manufacturer's nominal value)) from the outer and inner sides of the bonding layer toward the recess formed by the inner and outer periphery ends of the bonding layer, the alumina plate, and the aluminum plate.

[0209] [Evaluation Method]

[0210] (Measurement of the number of fibers in the cross-section after setting)

[0211] The number of fibers in the electrostatic chucks and edge rings of Examples 1-22 after installation was measured under the following conditions. That is, the plasma protection material installed on each electrostatic chuck and edge ring was cut in the vertical direction, and the number of fibers in the cross-section was measured from the obtained cross-section using a microscope (Keyence VHX-5000).

[0212] (Evaluation of plasma resistance)

[0213] The electrostatic chucks and edge rings of Examples 1-22 and Comparative Examples 1-4 were subjected to plasma treatment under the conditions shown below. Then, the plasma protective material was removed, and the ends of the silicone adhesive were observed at 100x magnification using a digital microscope (Keyence VHX-6000). In the evaluation of plasma resistance, "A+" was defined as no change in the appearance of the silicone adhesive before and after plasma treatment; "A" was defined as the maximum retraction of the outer or inner peripheral end surface of the silicone adhesive into the silicone adhesive less than 2 mm; "B" was defined as the maximum retraction of the outer or inner peripheral end surface of the silicone adhesive into the silicone adhesive more than 2 mm but less than 5 mm; "C" was defined as silicone adhesive residue with the maximum retraction of the outer or inner peripheral end surface into the silicone adhesive more than 5 mm but less than 8 mm; and "D" was defined as the maximum retraction of the outer or inner peripheral end surface of the silicone adhesive into the silicone adhesive more than 8 mm or the silicone adhesive completely disappearing.

[0214] Plasma processing device: Unity Me (manufactured by Tokyo Electron)

[0215] High-frequency power output: 1000W

[0216] High-frequency power supply frequency: 13.56MHz

[0217] Bias power supply output: None

[0218] Vacuum level: 300mTorr

[0219] Oxygen flow rate: 400 sccm

[0220] Fluorine gas flow rate: 200 sccm

[0221] Placement surface temperature: 25℃

[0222] Plasma treatment time: 24 hours

[0223] (Durability evaluation)

[0224] The durability of the electrostatic chucks and edge rings of Examples 1-22 and Comparative Examples 1-4 was evaluated. Specifically, thermal cycling and plasma treatment were performed under the following conditions to evaluate the bonding layer of the electrostatic chucks and edge rings, as well as cracks or peeling of the plasma protective material. In the thermal cycling test, the electrostatic chucks and edge rings were immersed in a thermostatic bath (ESPEC TCC-151W) set to 0°C, heated to 120°C at a rate of 10°C / min, held at 120°C for 30 minutes, and cooled back to 0°C at a rate of 10°C / min for 200 cycles. Then, the electrostatic chucks and edge rings removed from the thermostatic bath were placed in a plasma device and subjected to plasma treatment for 10 hours. The appearance of the electrostatic chucks and edge rings was then observed and evaluated. In the durability evaluation, for the electrostatic chuck and edge ring, the case where neither the bonding layer nor the plasma protective material cracked or peeled was designated as "A"; the case where only the plasma protective material cracked or peeled was designated as "B"; the case where only the bonding layer cracked or peeled was designated as "C"; and the case where both the bonding layer and the plasma protective material cracked or peeled was designated as "D". The plasma treatment conditions are shown below.

[0225] Plasma processing device: Unity Me (manufactured by Tokyo Electron)

[0226] High-frequency power output: 1000W

[0227] High-frequency power supply frequency: 13.56MHz

[0228] Bias power supply output: None

[0229] Vacuum degree: 300mTorr

[0230] Oxygen flow rate: 400 sccm

[0231] Fluorine gas flow rate: 200 sccm

[0232] Placement surface temperature: 25℃

[0233] Plasma treatment time: 10 hours

[0234] (Particle resistance evaluation 1)

[0235] The particle resistance (particle generation capability) of the electrostatic chucks of Examples 1-13 and Comparative Examples 1 and 2 was evaluated. Specifically, a dummy wafer was placed on the mounting surface (holding component) of the electrostatic chuck, and the number of particles attached to the side of the dummy wafer in contact with the mounting surface after plasma treatment was calculated. That is, after placing a dummy wafer (diameter 300 mm, thickness 775 mm, silicon material) on the mounting surface of the electrostatic chuck, it was placed in a plasma device and subjected to plasma treatment for 24 hours. Then, the electrostatic chuck was removed, the dummy wafer was lifted from the mounting surface, and the number and size of particles attached to the side of the dummy wafer in contact with the mounting surface were measured using a wafer surface inspection device (TOPCON WM-10). The number of particles with a diameter of 0.5 μm or more and less than 1.0 μm and the number of particles with a diameter of 1.0 μm or more were measured respectively. In the evaluation of particle resistance, cases with a total particle count of less than 1000 are rated as "A", cases with a particle count of 1000 or more but less than 5000 are rated as "B", cases with a particle count of 5000 or more but less than 10000 are rated as "C", and cases with a particle count of 10000 or more are rated as "D". Furthermore, the plasma treatment conditions are as follows.

[0236] Plasma processing device: Unity Me (manufactured by Tokyo Electron Co., Ltd.)

[0237] High-frequency power output: 1000W

[0238] High-frequency power supply frequency: 13.56MHz

[0239] Bias power supply output: None

[0240] Vacuum degree: 300mTorr

[0241] Oxygen flow rate: 400 sccm

[0242] Fluorine gas flow rate: 200 sccm

[0243] Placement surface temperature: 25℃

[0244] Plasma treatment time: 24 hours

[0245] (Particle resistance evaluation 2)

[0246] The particle resistance of the edge rings in Examples 14-22 and Comparative Examples 3 and 4 was evaluated. Specifically, an electrostatic chuck of Example 1 was placed on the inner periphery of the edge ring, a dummy wafer was placed on the mounting surface of the electrostatic chuck, and then plasma treatment was performed. Then, the number of particles attached to the surface of the removed dummy wafer that was in contact with the mounting surface was counted. That is, an electrostatic chuck of Example 1 was placed on the inner periphery of the edge ring, and a dummy wafer (diameter 300 mm, thickness 775 mm, material silicon) was placed on the mounting surface of the electrostatic chuck as an evaluation sample. Then, the evaluation sample was placed in a plasma device and subjected to plasma treatment for 24 hours. After the plasma treatment, the evaluation sample was removed, the dummy wafer was lifted from the mounting surface, and the number and size of particles attached to the surface of the dummy wafer that was in contact with the mounting surface were measured using a wafer surface inspection device (TOPCON WM-10). The number of particles with a diameter of 0.5 μm or more and less than 1.0 μm and the number of particles with a diameter of 1.0 μm or more were measured. In the evaluation of particle resistance, cases with a total particle count of less than 1500 are rated as "A", cases with a particle count of 1500 or more but less than 5500 are rated as "B", cases with a particle count of 5500 or more but less than 10500 are rated as "C", and cases with a particle count of 10500 or more are rated as "D". Furthermore, the plasma treatment conditions are as follows.

[0247] Plasma processing device: Unity Me (manufactured by Tokyo Electron Co., Ltd.)

[0248] High-frequency power output: 1000W

[0249] High-frequency power supply frequency: 13.56MHz

[0250] Bias power supply output: None

[0251] Vacuum degree: 300mTorr

[0252] Oxygen flow rate: 400 sccm

[0253] Fluorine gas flow rate: 200 sccm

[0254] Placement surface temperature: 25℃

[0255] Plasma treatment time: 24 hours

[0256] [Table 1]

[0257] [Table 2]

[0258] (Overall evaluation)

[0259] As shown in Tables 1 and 2, the plasma-resistant structure (electrostatic chuck, edge ring) of this disclosure, which includes a plasma protective material containing fibers, exhibits a good balance of plasma resistance, durability, and particle resistance compared to the plasma-resistant structures of Comparative Examples 1-4, which do not contain fibers, thus demonstrating a long service life overall.

[0260] In Comparative Examples 1 and 3, which feature O-rings made of fluororubber, while exhibiting excellent durability, they are vulnerable to plasma. In the case of the twisted yarn in the embodiments, since multiple fibers are intertwined rather than bonded, it is believed that the positional relationship changes under stress, thus mitigating the effects. In contrast, in Comparative Example 3, due to its integrated structure (block), it is believed that the material cannot deform under changing positional relationships, resulting in cracking. Furthermore, in Comparative Examples 2 and 4, which form the plasma protective material by plasma-spraying alumina particles instead of using fibers, not only is the particle resistance poor, but the material is particularly vulnerable to thermal stress in terms of durability, and cracking occurred after evaluation.

[0261] The results from Examples 1-5 and 14-18 show that longer fiber length (aspect ratio) leads to better performance. Furthermore, shorter fiber lengths result in poorer plasma resistance and decreased particle resistance. Regarding durability, good results were achieved regardless of fiber length.

[0262] The results from Examples 6-9 and 20-22 show that excessive twisting reduces durability and plasma resistance. This is attributed to the difficulty in stress relief due to fiber fixation and insufficient follow-through of the contact surface, leading to increased gaps between the substrate / holding components and the plasma protection material. Conversely, fewer twisting cycles result in decreased plasma resistance and particle resistance. Therefore, the preferred twisting cycle (converted to per meter) is 20-300 cycles. In other words, by setting the twisting cycle within this range, both stress relief and particle generation suppression can be achieved.

[0263] The results from Examples 10-11 show that plasma resistance decreases when the fiber bundle becomes thicker (when the number of fibers in the fiber bundle increases). This is believed to be because the increased number of fibers reduces the movable area of ​​the fibers, making it difficult to alleviate stress, resulting in a larger gap between the abutment and the fiber bundle, as well as between the holding component and the fiber bundle.

[0264] In Example 12, using SUS fibers, plasma resistance was low. This is believed to be due to the material's low resilience, creating a gap between the abutment and the retaining component. Durability results were good, which is believed to be due to the fiber's high stress mitigation properties. In Example 13, using carbon fibers, durability and particle resistance were low. This is believed to be due to the fiber's high resilience, making it prone to failure under slight stress.

[0265] [Method 2 for Manufacturing an Electrostatic Chuck]

[0266] (Example 23)

[0267] Regarding Example 23 ( Figure 9 An electrostatic chuck-shaped plasma-resistant structure (hereinafter referred to as an electrostatic chuck) is fabricated in the manner shown in Table 3. Specifically, a silicone adhesive (intermediate component, bonding layer) is applied to the upper surface of an aluminum base (second component, 100 mm in diameter, 30 mm in thickness) excluding the outer periphery, achieving a thickness of 100 μm after coating. Using this silicone adhesive, an alumina plate (100 mm in diameter, 4 mm in thickness) serving as a retaining component (first component) is bonded to the upper surface of the base. Next, an alumina fiber bundle (fiber structure, plasma protection material, 53% in non-installed state) made of alumina fibers, as shown in Table 3, is wound four times within the recess (outer periphery of the bonding layer) formed by the outer periphery of the silicone adhesive (bonding layer), the alumina plate, and the uncoated portion of the base, and fixed between the alumina plate and the base. Then, by using a blowtorch, the endpoints of the alumina fiber bundle and a portion of the alumina fiber bundle overlapping in position are bonded together. Then, the silicone adhesive is allowed to cure in a constant temperature bath set at 120°C for 2 hours to produce an electrostatic chuck.

[0268] (Example 24)

[0269] Regarding Example 24 ( Figure 10 Except for the thickness of the silicone adhesive, the occupancy of the un-set alumina fiber bundles, and the number of times the alumina fiber bundles were wound, the electrostatic chuck was manufactured in the same manner as in Example 23, with the configuration shown in Table 3. In Example 24, the thickness of the silicone adhesive was 565 μm, the occupancy of the un-set alumina fiber bundles was 46%, and the number of times the alumina fiber bundles were wound was 32.

[0270] (Example 25)

[0271] Regarding Example 25, the electrostatic chuck was manufactured in the same manner as in Example 23, except for the thickness of the silicone adhesive, the occupancy of the alumina fiber bundle in the unset state, and the number of times the alumina fiber bundle was wound. In Example 25, the thickness of the silicone adhesive was 70 μm, the occupancy of the alumina fiber bundle in the unset state was 51%, and the number of times the alumina fiber bundle was wound was 16.

[0272] (Examples 26-28)

[0273] Regarding Examples 26-28, the electrostatic chucks were manufactured in the same manner as in Example 23, except for the diameter of the alumina fiber bundle, the occupancy rate of the alumina fiber bundle in the non-positioned state, and the number of times the alumina fiber bundle was wound. In Examples 26-28, the diameter of the alumina fiber bundle was 120 μm, the occupancy rate of the alumina fiber bundle in the non-positioned state was 44%, and the number of times the alumina fiber bundle was wound was 1, 2, and 10 times, respectively.

[0274] [Evaluation Method]

[0275] (Evaluation of long-term plasma resistance)

[0276] For the electrostatic chucks of Examples 23-28, plasma treatment was performed under the conditions shown below. Then, the plasma protective material was observed at 100x magnification using a digital microscope (Keyence VHX-6000). Next, the plasma protective material was removed from these electrostatic chucks, and the ends of the silicone adhesive were observed at 100x magnification using a digital microscope. In the long-term plasma resistance evaluation, "A" was defined as the condition where the appearance of the silicone adhesive remained unchanged before and after plasma treatment; "B" was defined as the condition where the outer or inner peripheral end surface of the silicone adhesive receded less than 2 mm into the silicone adhesive; "C" was defined as the condition where the outer or inner peripheral end surface of the silicone adhesive receded more than 2 mm but less than 8 mm into the silicone adhesive; and "D" was defined as any one or more of the following: the outer or inner peripheral end surface of the silicone adhesive receded more than 8 mm into the silicone adhesive; the silicone adhesive disappeared; or damage was observed in the fiber structure.

[0277] Plasma processing device: Unity Me (manufactured by Tokyo Electron)

[0278] High-frequency power output: 1000W

[0279] High-frequency power supply frequency: 13.56MHz

[0280] Bias power supply output: None

[0281] Vacuum level: 300mTorr

[0282] Oxygen flow rate: 400 sccm

[0283] Fluorine gas flow rate: 200 sccm

[0284] Placement surface temperature: 25℃

[0285] Plasma treatment time: 48 hours

[0286] Intermediate component: silicone adhesive

[0287] [Table 3]

[0288] As can be seen from Examples 23 and 25, when the fiber structure is compressed and disposed on the first and second components (Case 1), the higher the D / H value, the better the effect of isolating the silicone adhesive (intermediate component) from the plasma atmosphere.

[0289] Compared to Example 23, Examples 26 and 27 differ slightly in the diameter and D / H of the alumina fiber bundles (fiber structures), but the length H between the first and second components remains the same. The most significant difference lies in the number of windings of the fiber structure. The number of windings is considered to be roughly proportional to the length of overlap of the fiber structure in the direction opposite to the silicone adhesive in the installed fiber structure. Based on the results of long-term plasma resistance evaluation, the fiber structures' effectiveness in isolating or distancing the silicone adhesive from the plasma atmosphere, from highest to lowest, is shown in Examples 23, 27, and 26. Regions AC of Example 23 (corresponding to...) Figure 10 In Example 23, the fibrous structure occupancy rate in regions A and C was over 73%, while in Example 26, the fibrous structure occupancy rate in region B was 58%, and in region C it was 29%. In other words, the region where fibers are densely packed in Example 23 (the length of overlap of the fibrous structure in the direction opposite to the silicone adhesive) was larger than that in Examples 26 and 27. This increased the length of plasma atmosphere reaching the silicone adhesive, resulting in a higher effectiveness in isolating or moving the silicone adhesive away from the plasma atmosphere (the same effect can be inferred from Example 24).

[0290] Compared to Examples 26 and 27, Example 28 has the same diameter D of the fiber structure and the same length H between the first and second components. The most significant difference lies in the number of times the fiber structure is wound. Therefore, in the results of long-term plasma resistance evaluation, the fiber structure's effectiveness in isolating or distancing the silicone adhesive from the plasma atmosphere, from highest to lowest, is shown in Examples 28, 27, and 26. In Example 28, the fiber structure's occupancy in region AC is consistently above 85%, and the appearance of the silicone adhesive did not change during the long-term plasma resistance evaluation. However, damage was observed in a portion of the fiber structure. In Example 28, the fiber structure's occupancy in region A is as high as 96%, with minimal gaps between fibers. Therefore, it could not withstand the continuous thermal stress generated during the long-term plasma resistance evaluation, resulting in damage to a portion of the fiber structure. Furthermore, the results of Examples 26 and 27 show that as long as the area where fibers are densely packed occupies at least a portion of the fiber structure, it can effectively isolate the silicone adhesive (intermediate component) from the plasma atmosphere.

[0291] Explanation of reference numerals in the attached figures

[0292] 1, 1a, 11, 21, 31, 41 Plasma-resistant construction (electrostatic chuck, edge ring)

[0293] 2, 2a, 12, 22, 32, 42 First component (retaining component, edge ring part)

[0294] 32a Retaining the upper surface of the component

[0295] 3, 13, 23, 33, 43 Second component (base and edge ring part)

[0296] 33a Recess of the second component

[0297] 4, 14, 24a, 24b, 34, 44 Intermediate components (bonding layers)

[0298] 34b Inner surface of the bonding layer

[0299] Plasma protective materials of types 5, 15, 25, 35, 45, 45a, and 45b.

[0300] 36. Through Section

[0301] 36a Inner wall of the through section

[0302] M Insulating Components

[0303] P Lifting Pin

[0304] W is the object being held.

Claims

1. A plasma-resistant structure, characterized in that, include: A first component, a second component, and an intermediate component disposed between the first component and the second component; as well as Plasma protective materials containing fibers, At least one of the first component and the second component has plasma resistance. The plasma-protective material containing fibers is disposed on the outer surface side of the plasma-resistant structure at the end of the intermediate component.

2. The plasma-resistant structure according to claim 1, characterized in that, The fiber-containing plasma protective material is disposed on the outer periphery of the intermediate component.

3. The plasma-resistant structure according to claim 1, characterized in that, The fiber extends along the outer periphery of the intermediate component.

4. The plasma-resistant structure according to claim 1, characterized in that, The plasma protective material containing fibers comprises a fiber structure made of fibers.

5. The plasma-resistant structure according to claim 4, characterized in that, The fiber structure extends along the outer periphery of the intermediate component.

6. The plasma-resistant structure according to claim 1, characterized in that, The intermediate component is a bonding layer.

7. The plasma-resistant structure according to claim 1, characterized in that, The length of the fiber in the extending direction is longer than the outer perimeter of the intermediate component. The fibers are wound around the outer periphery of the intermediate component.

8. The plasma-resistant structure according to claim 4, characterized in that, The length of the fibrous structure in the extending direction is longer than the outer perimeter of the intermediate component. The fiber structure is wound around the outer periphery of the intermediate component.

9. The plasma-resistant structure according to claim 1, characterized in that, The fiber is an inorganic fiber.

10. The plasma-resistant structure according to claim 4, characterized in that, The fibrous structure comprises at least one of twisted yarn, nonwoven fabric, mesh, or woven fabric.

11. An electrostatic chuck, characterized in that, Possessing the plasma-resistant structure as described in claim 1, The first component is a holding component that holds the object being held, and the second component is a base that holds the holding component.

12. The electrostatic chuck according to claim 11, characterized in that, The outermost periphery of the retaining component is located outside the outermost point of the plasma protective material.

13. The electrostatic chuck according to claim 11, characterized in that, The outermost periphery of the base is located outside the outermost point of the plasma protective material.

14. An edge ring, characterized in that, It possesses the plasma-resistant structure as described in claim 1.

15. A component for a plasma processing apparatus, characterized in that, It possesses the plasma-resistant structure as described in claim 1.

16. A fibrous structure, characterized in that, It has fibers, In a plasma-resistant structure comprising a first component, a second component, an intermediate component disposed between the first component and the second component, and the fiber structure, the fiber structure is disposed along the outer periphery of the intermediate component.

17. A method for manufacturing a plasma-resistant structure, characterized in that, The plasma-resistant structure includes: A first component, a second component, and an intermediate component disposed between the first component and the second component; and A fibrous structure containing fibers. The manufacturing method includes: The process of configuring an intermediate component between the first component and the second component; and The process of winding the fiber structure along the outer periphery of the intermediate component.

18. A method for repairing a component of a plasma processing device, characterized in that, The plasma processing apparatus includes a first component, a second component, and an intermediate component disposed between the first component and the second component. The repair method includes a step of winding a fibrous structure having fibers along the outer periphery of the intermediate component.

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