High-purity silicon material crushing system

Abstract

The application provides a high-purity silicon material crushing system, and particularly relates to the technical field of silicon material processing. The high-purity silicon material crushing system comprises a feeding module, a heating module, a thermal cracking module, a gas collecting module, a purification module, a regeneration and circulation module and a central control module. The feeding module is used for sealingly conveying the silicon material to a downstream work station. The heating module is sealingly connected to the discharge end of the feeding module, and performs gradient heating on the silicon material in an inert atmosphere. The thermal cracking module is connected to the discharge end of the heating module, and is used for spraying liquid argon on the silicon material to make the silicon material crack. The gas collecting module is arranged on the outer circumferential side of the thermal cracking module, and is used for collecting argon gas generated by gasification in the thermal cracking module. The purification module is connected to the gas outlet of the gas collecting module, and is used for multi-stage purification of the collected argon gas. The regeneration and circulation module is connected to the gas outlet of the purification module, and is used for liquefying the purified argon gas and supplying the argon gas back to the thermal cracking module. The central control module is electrically connected to each module, and is used for controlling the coordinated operation of each module.

Description

Technical Field

[0001] This application relates to the field of silicon material processing technology, and in particular to a high-purity silicon material crushing system. Background Technology

[0002] In the deep processing of high-purity silicon materials for photovoltaic semiconductors, high-purity polycrystalline silicon is the core raw material for producing monocrystalline silicon wafers. Its purity and physical morphology directly affect the photoelectric conversion efficiency and yield of the final product. Methods such as manual crushing, mechanical crushing, thermal shock crushing, and cryogenic medium-assisted crushing are commonly used to reduce the particle size of the silicon material and facilitate its recycling.

[0003] However, the above methods often have limited applicability when processing polycrystalline bulk materials, monocrystalline edge materials, and recycled materials; and are prone to the introduction of impurities, surface reactions, or high powder content, making it difficult to balance purity, yield, and processing stability. At the same time, the burden of gas or waste liquid treatment is relatively large, affecting the economy and safety of continuous production.

[0004] Therefore, how to balance the adaptability to various types of raw materials, purity maintenance, low loss, and production safety during the crushing and processing of high-purity silicon has become a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0005] This application provides a high-purity silicon material crushing system. Addressing the needs of maintaining purity, raw material adaptability, loss control, and continuous safe production during the high-purity silicon material crushing process, an integrated crushing technology solution is constructed, comprising feeding, processing, gas recovery and purification, and recycling. This allows high-purity silicon material to complete conveying, crushing, and media circulation processing in a controlled environment, thereby balancing the processing adaptability of different types of silicon material with overall production stability.

[0006] This application provides a high-purity silicon material crushing system, comprising:

[0007] The feeding module is used to convey the silicon material to be crushed to the downstream station in a closed manner.

[0008] The heating module is sealed and connected to the discharge end of the feeding module, and is used to perform gradient heating of silicon material under an inert atmosphere.

[0009] The thermal cracking module is connected to the discharge end of the heating module and is used to spray liquid argon cooling medium onto the heated silicon material to cause thermal cracking of the silicon material.

[0010] A gas collection module is located on the outer periphery of the thermal cracking module and is used to collect argon gas generated by vaporization inside the thermal cracking module.

[0011] The purification module is connected to the outlet of the gas collection module and is used to purify the collected argon gas in multiple stages.

[0012] The regeneration and circulation module is connected to the outlet of the purification module and is used to liquefy the purified argon gas and supply it back to the thermal cracking module.

[0013] The central control module is electrically connected to each of the modules and is used to control the coordinated operation of each module.

[0014] The high-purity silicon material crushing system provided in this application includes a feeding module, a heating module, a thermal cracking module, a gas collection module, a purification module, a regeneration and circulation module, and a central control module. The feeding module is used to convey the silicon material to be crushed to the downstream station in a sealed manner. The heating module is sealed and connected to the outlet end of the feeding module, and is used to perform gradient heating of the silicon material under an inert atmosphere. The thermal cracking module is connected to the outlet end of the heating module, and is used to spray liquid argon cooling medium onto the heated silicon material to cause thermal cracking. The gas collection module is located on the outer periphery of the thermal cracking module, and is used to collect the argon gas generated by vaporization within the thermal cracking module. The purification module is connected to the outlet of the gas collection module, and is used to perform multi-stage purification of the collected argon gas. The regeneration and circulation module is connected to the outlet of the purification module, and is used to liquefy the purified argon gas and supply it back to the thermal cracking module. The central control module is electrically connected to each module, and is used to control the coordinated operation of each module.

[0015] Thus, the high-purity silicon crushing system provided in this application, through the coordinated design of the heating module and the thermal cracking module, solves the contamination problems in the prior art, such as the introduction of metal impurities by mechanical crushing, silicon oxidation caused by water-blast crushing, and the generation of silicon nitride impurities by liquid nitrogen-assisted crushing. The heating module forms a controllable temperature difference through gradient temperature control, ensuring uniform stress distribution within the silicon material and avoiding uneven thermal cracking or oxidation reactions caused by local overheating. The thermal cracking module uses an inert cooling medium that does not react with the silicon matrix at high temperatures, completely avoiding the risks of nitriding, oxidation, and metal contamination. The combination of the gas collection module and the purification module achieves full recovery and deep purification of argon gas, eliminating the waste of direct gas discharge and the safety hazard of asphyxiation. The liquid argon regeneration module compresses and liquefies the purified argon gas, returning it to the system for recycling, significantly reducing raw material loss. The central control module, through linkage control, adapts to the processing needs of multiple types of silicon materials, achieving universal, pollution-free, and low-loss high-purity silicon crushing processing without the need to change equipment or adjust processes.

[0016] In one possible implementation, the feeding module includes:

[0017] The casing, with its interior forming a conveying channel;

[0018] The conveying mechanism, housed within the housing, is used to carry and convey silicon material.

[0019] The material level sensing component is located at one end of the conveying mechanism along its length and is used to detect the material level status in the conveying channel.

[0020] The drive unit is connected to the conveying mechanism and is used to adjust the conveying speed according to the detection signal of the material level sensing component.

[0021] In one possible implementation, the conveying mechanism is a chain or roller conveyor platform, wherein the rollers of the roller conveyor platform adopt a segmented floating structure and the roller surface is provided with anti-slip texture.

[0022] The material level sensing component consists of multiple sets of infrared or laser beam sensors arranged along the conveying direction;

[0023] The drive unit consists of a servo motor and a frequency converter.

[0024] In one possible implementation, the heating module includes:

[0025] The furnace body is heated, and high-purity argon gas is filled inside the furnace body to form an inert protective atmosphere;

[0026] The heat-insulating partition divides the interior of the heating furnace into a preheating zone, a constant temperature zone, and a transition zone along the silicon material conveying direction.

[0027] Heating elements are installed in each temperature zone to independently adjust the heating temperature of each zone.

[0028] Temperature sensing elements are installed in each temperature zone to monitor the temperature of each zone in real time and feed it back to the central control module.

[0029] In one possible implementation, the heating element is an infrared heating element;

[0030] The temperature sensing element is a thermocouple sensor;

[0031] The heat insulation partition is a high-temperature resistant heat insulation baffle. Adjacent temperature zones are separated by the heat insulation baffle to reduce heat interference.

[0032] In one possible implementation, the thermal cracking module includes:

[0033] The micro-negative pressure sealed cavity has its inlet end sealed to the outlet end of the heating module;

[0034] The atomizing spray assembly is arranged in a ring inside a slightly negative pressure sealed cavity to spray liquid argon in all directions around the silicon material.

[0035] The supply pipeline connects an external liquid argon source to the atomizing spray assembly, and is used to continuously supply liquid argon to the atomizing spray assembly.

[0036] In one possible implementation, the atomizing spray assembly includes a plurality of atomizing nozzles evenly distributed circumferentially along the inner wall of the cavity, with each atomizing nozzle arranged in a ring around the silicon material placement area on a horizontal plane to form a 360° full-coverage spray area.

[0037] In one possible implementation, the gas collection module includes:

[0038] The annular gas collection main pipeline is arranged circumferentially around the outer wall of the hot cracking module, and the interior of the annular gas collection main pipeline is kept under a slight negative pressure.

[0039] Multiple gas collecting branch pipes are evenly distributed on the annular gas collecting main pipe, and the air inlet end of each gas collecting branch pipe is connected to the cavity wall of the hot cracking module.

[0040] A centralized gas outlet is located on the ring-shaped gas collection main pipeline. It is used to collect argon gas from each gas collection branch pipeline and output it to the purification module.

[0041] In one possible implementation, the purification module includes a primary filtration unit, a secondary dehydration unit, and a tertiary distillation unit connected in sequence.

[0042] The primary filtration unit is used to intercept silicon powder particles in argon gas, the secondary dehydration unit is used to condense and remove water vapor from argon gas, and the tertiary distillation unit is used to remove trace impurities from argon gas.

[0043] In one possible implementation, the regeneration cycle module includes a compressor unit and a liquefaction unit;

[0044] The compressor unit is used to pressurize the purified argon gas, and the liquefaction unit is used to cool and liquefy the pressurized argon gas into liquid argon. The liquid argon outlet is connected to the liquid argon supply pipeline of the thermal cracking module through a pipeline, forming a closed-loop circulation circuit.

[0045] In addition to the technical problems solved by this application, the technical features constituting the technical solutions, and the beneficial effects brought about by the technical features of these technical solutions as described above, other technical problems that can be solved by the high-purity silicon material crushing system provided by this application, other technical features contained in the technical solutions, and the beneficial effects brought about by these technical features will be further explained in detail in the specific embodiments. Attached Figure Description

[0046] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments of this application or the prior art will be briefly introduced below. Obviously, the drawings described below are only a part of the embodiments of this application. These drawings and text descriptions are not intended to limit the scope of the concept of this application in any way, but to illustrate the concept of this application to those skilled in the art by referring to specific embodiments. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0047] Figure 1 A process flow diagram of the high-purity silicon material crushing system provided in the embodiments of this application;

[0048] Figure 2 This is a schematic diagram of the feeding module of the high-purity silicon material crushing system provided in the embodiments of this application;

[0049] Figure 3 This is a schematic diagram of the thermal cracking module of the high-purity silicon material crushing system provided in the embodiments of this application;

[0050] Figure 4 This is a schematic diagram of the gas collection module of the high-purity silicon crushing system provided in the embodiments of this application.

[0051] Explanation of reference numerals in the attached figures:

[0052] 100-High-purity silicon material crushing system;

[0053] 200 - Feeding module; 210 - Housing; 220 - Conveying mechanism; 230 - Material level sensing component;

[0054] 300 - Heating module;

[0055] 400 - Thermal cracking module; 410 - Micro-negative pressure sealed cavity; 420 - Atomizing spray assembly; 421 - Atomizing nozzle; 430 - Supply pipeline;

[0056] 500 - Gas collection module; 510 - Ring-shaped main gas collection pipeline; 520 - Gas collection branch pipeline; 530 - Centralized gas outlet;

[0057] 600-Purification Module;

[0058] 700-Regeneration Cycle Module;

[0059] 800-Central Control Module. Detailed Implementation

[0060] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0061] As described in the background section, high-purity silicon material crushing and processing technology is mainly used in the photovoltaic semiconductor industry for the reduction and reuse of polycrystalline silicon blocks, monocrystalline silicon edge materials, and recycled silicon materials. This type of processing is usually performed before raw material shaping, grading and transfer, and subsequent purification or feeding, and has high requirements for silicon material purity, particle size uniformity, loss control, and operational safety.

[0062] In the current processing of high-purity silicon, methods such as manual hammering, mechanical extrusion or impact, thermal shock crushing, and low-temperature medium-assisted cold cracking are commonly used to crack or reduce the particle size of silicon. The basic principle is to break the silicon by external force or sudden change in thermal stress in order to obtain particles or blocks suitable for subsequent processes.

[0063] However, the above solutions generally lack adaptability in practical applications. When dealing with block materials, irregularly shaped edge materials, and recycled scraps, frequent adjustments to equipment or processes are often required, resulting in poor stability of continuous processing. At the same time, mechanical contact processes can easily introduce external impurities, and thermal shock or low-temperature media treatment may cause surface reactions, increased powder content, or difficulties in media recovery, making it difficult to balance purity maintenance, yield, and operating costs.

[0064] Furthermore, the handling of dust, exhaust gas, and waste liquid is a significant burden, and the direct emission of some low-temperature gases can lead to waste and operational safety hazards, thus limiting the development of high-purity silicon material crushing and processing towards closed-loop, clean, and large-scale operations. How to balance adaptability to multiple types of raw materials, low pollution, low loss, and safe operation within the same processing system has become an urgent technical problem to be solved in this field.

[0065] To address the aforementioned technical problems, this application provides a high-purity silicon material crushing system. This system includes a feeding module, a heating module, a thermal cracking module, a gas collection module, a purification module, a regeneration and circulation module, and a central control module. The feeding module is used to convey the silicon material to be crushed to the downstream station in a sealed manner. The heating module is sealed and connected to the outlet end of the feeding module, used for gradient heating of the silicon material under an inert atmosphere. The thermal cracking module is connected to the outlet end of the heating module, used to spray liquid argon cooling medium onto the heated silicon material to cause thermal cracking. The gas collection module is located on the outer periphery of the thermal cracking module, used to collect the argon gas generated by vaporization within the thermal cracking module. The purification module is connected to the outlet of the gas collection module, used for multi-stage purification of the collected argon gas. The regeneration and circulation module is connected to the outlet of the purification module, used to liquefy the purified argon gas and supply it back to the thermal cracking module. The central control module is electrically connected to each module, used to control the coordinated operation of each module.

[0066] Thus, the high-purity silicon crushing system provided in this application, through the coordinated design of the heating module and the thermal cracking module, solves the contamination problems in the prior art, such as the introduction of metal impurities by mechanical crushing, silicon oxidation caused by water-blast crushing, and the generation of silicon nitride impurities by liquid nitrogen-assisted crushing. The heating module forms a controllable temperature difference through gradient temperature control, ensuring uniform stress distribution within the silicon material and avoiding uneven thermal cracking or oxidation reactions caused by local overheating. The thermal cracking module uses an inert cooling medium that does not react with the silicon matrix at high temperatures, completely avoiding the risks of nitriding, oxidation, and metal contamination. The combination of the gas collection module and the purification module achieves full recovery and deep purification of argon gas, eliminating the waste of direct gas discharge and the safety hazard of asphyxiation. The liquid argon regeneration module compresses and liquefies the purified argon gas, returning it to the system for recycling, significantly reducing raw material loss. The central control module, through linkage control, adapts to the processing needs of multiple types of silicon materials, achieving universal, pollution-free, and low-loss high-purity silicon crushing processing without the need to change equipment or adjust processes.

[0067] To make the above-mentioned objectives, features, and advantages of the embodiments of this application more apparent and understandable, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0068] This application provides a high-purity silicon material crushing system. Through the coordinated operation of a feeding module, heating module, thermal cracking module, gas collection module, purification module, regeneration and circulation module, and a central control module, the system achieves closed-loop conveying of the silicon material to be crushed, inert atmosphere gradient heating, liquid argon spray thermal cracking, argon gas collection and purification, and liquefaction and resupply. The specific structure of the high-purity silicon material crushing system provided in this application embodiment is described below with reference to the accompanying drawings.

[0069] refer to Figure 1This application provides a high-purity silicon material crushing system 100. The high-purity silicon material crushing system 100 may include a feeding module 200, a heating module 300, a thermal cracking module 400, a gas collection module 500, a purification module 600, a regeneration and circulation module 700, and a central control module 800. In this embodiment, the feeding module 200 is used to convey the silicon material to be crushed to the downstream station in a sealed manner. The heating module 300 is sealed and connected to the discharge end of the feeding module 200 and is used to perform gradient heating of the silicon material under an inert atmosphere. The thermal cracking module 400 is connected to the discharge end of the heating module 300 and is used to spray liquid argon cooling medium onto the heated silicon material to cause thermal cracking. The gas collecting module 500 is disposed on the outer periphery of the thermal cracking module 400 and is used to collect the argon gas generated by vaporization during the thermal cracking process. The purification module 600 is connected to the gas outlet of the gas collecting module 500 and is used to perform multi-stage purification of the collected argon gas. The regeneration and circulation module 700 is connected to the gas outlet of the purification module 600 and is used to liquefy the purified argon gas and supply it back to the thermal cracking module 400. The central control module 800 is electrically connected to each module and is used to control the coordinated operation of each module.

[0070] In a specific implementation, the feeding module 200 refers to a conveying unit used to send the silicon material to be crushed into the subsequent processing station in a closed manner. It plays the role of introducing raw materials and isolating external pollution in the overall system. It is usually set at the front end of the system and connected to the feeding end of the heating module 300 through a sealed connection port to form a continuous or intermittent closed conveying channel.

[0071] In one possible embodiment, the feeding module 200 can adopt a box-type, cylindrical, or frame-type structure. The shell 210 can be made of stainless steel, corrosion-resistant alloy, or composite sandwich panel to meet the cleanliness and structural strength requirements of the high-purity silicon material processing process. Its length and cross-sectional dimensions can be matched according to the silicon material block size, single feeding amount, and downstream channel cross-section, typically so that the outlet size corresponds to the inlet size of the heating module 300 to reduce material jamming and flow deviation during the transition process.

[0072] Heating module 300 refers to a heating unit that is sealed and connected to the discharge end of feeding module 200 and is used to perform segmented heating treatment on silicon material under an inert atmosphere. Its function is to form a controllable temperature gradient in the silicon material entering the module, providing thermal stress conditions for the subsequent hot cracking process. This module is connected to feeding module 200 and hot cracking module 400 in sequence through a sealed interface to maintain the stability of the internal atmosphere.

[0073] In one possible embodiment, the heating module 300 may employ a high-temperature resistant metal furnace body, a ceramic-lined furnace body, or a double-layer insulated furnace body. Multiple independent heating zones or annular heating bands may be arranged internally, and an insulation layer and temperature detection devices may be configured externally to allow for segmented heating along the conveying direction. The furnace cavity length, the number of heating zones, and the cavity cross-section can be configured according to the silicon material specifications and processing cycle, typically ensuring that the effective volume of the heating section remains consistent with the flow capacity of the preceding and following connecting sections, thereby maintaining the uniformity of heating during continuous silicon material conveying.

[0074] The thermal cracking module 400 is a processing chamber connected to the discharge end of the heating module 300. It sprays liquid argon cooling medium onto the heated silicon material, causing it to thermally crack and break. Its function is to utilize the rapid establishment of a temperature difference between the silicon material's surface and interior to induce cracking along defects, thereby reducing the diameter of the blocky silicon material into particles or small pieces suitable for subsequent grading and feeding. This module is connected to the heating module 300 via a low-temperature resistant sealed interface to facilitate liquid argon spray cooling and gas extraction.

[0075] In one possible embodiment, the thermal cracking module 400 can adopt a closed cavity, cylindrical cavity, or multi-faceted cavity structure. The nozzle arrangement can be a circumferential array, top spray, or multi-point diversion. The cavity material can be low-temperature toughness stainless steel, aluminum alloy lining, or composite insulation shell 210 to adapt to liquid argon spraying and rapid cooling conditions. Its internal dimensions are typically matched with the outlet of the heating module 300 and the pumping capacity of the gas collecting module 500, so that the liquid argon spraying coverage area is adapted to the silicon material residence space.

[0076] The gas collection module 500 is a gas collection unit located on the outer periphery of the thermal cracking module 400, used to collect the argon gas formed by the vaporization of liquid argon upon contact with hot silicon material. Its function is to collect the low-temperature argon gas generated during the thermal cracking process in a closed manner and guide it to subsequent purification stages, preventing gas escape and providing an inlet for recycling. This module is usually arranged around the outer shell of the thermal cracking module 400 and is connected to the thermal cracking module 400 through a gas collection channel to form a continuous suction channel.

[0077] In one possible embodiment, the gas collection module 500 may be an annular gas collection hood, a lateral gas collection pipe, or a multi-cavity parallel gas collection housing 210, and the material may be stainless steel, aluminum alloy, or low-temperature corrosion-resistant composite material; the cross-sectional area and arrangement of its gas collection channel are usually adapted to the gas production and cavity exhaust resistance of the hot cracking module 400 to ensure that the vaporized argon can be discharged in time and maintain a stable atmosphere environment in the hot cracking zone.

[0078] Purification module 600 refers to the gas purification unit connected to the outlet of gas collection module 500, used for multi-stage purification of recovered argon. Its function is to remove dust, moisture, trace reaction products, and other impurities entrained in the argon, so that the recovered gas reaches the purity required for re-liquefaction and resupply. This module is connected to gas collection module 500 and regeneration circulation module 700 in sequence through gas path interfaces. Multiple processing sections can be set up inside along the airflow direction to form a multi-stage purification path.

[0079] In one possible embodiment, the purification module 600 may adopt a combination structure of various purification units, and the shell material may be stainless steel, low-temperature resistant alloy or composite heat-insulating shell 210; the volume of its processing chamber and the diameter of the pipeline are usually designed according to the gas collection flow rate and the requirements of the recovery purity, so as to match the pressure drop between each unit and maintain the stability of the continuous purification process.

[0080] The regeneration and circulation module 700 is a circulation and regeneration unit connected to the outlet of the purification module 600, used to liquefy the purified argon gas and supply it back to the thermal cracking module 400. Its function is to convert the purified gas back into a liquid cooling medium and reintroduce it into the crushing process, thus forming a recycling system. This module is connected to the thermal cracking module 400 through a return pipeline to realize the transportation of liquid argon.

[0081] In one possible embodiment, the regeneration circulation module 700 may employ a device structure suitable for gas handling and liquefaction resupply, and the materials may include cryogenic steel, stainless steel, or aluminum heat exchange components. Its output capacity, liquefaction volume, and resupply pipe diameter can be matched according to the spraying requirements of the thermal cracking module 400 to ensure a continuous liquid argon supply that is consistent with the consumption cycle.

[0082] The central control module 800 refers to the control unit that is electrically connected to the feeding module 200, heating module 300, hot cracking module 400, gas collection module 500, purification module 600 and regeneration circulation module 700 respectively. Its function is to read the operating parameters of each module and implement interlock control and feedback adjustment for the conveying, heating, spraying, gas extraction, purification and liquefaction return processes, so that each module operates in a coordinated manner according to the preset process sequence.

[0083] In one possible embodiment, the central control module 800 can be a PLC (Programmable Logic Controller), an industrial computer controller, or a distributed control system to form a control network. Its control cabinet can be independently located outside the system and connected to each module via cables, communication lines, or fieldbuses. The control logic can be switched according to the type of silicon material, particle size requirements, and the purity of the circulating gas. It should be understood that the above examples are merely illustrative, and the embodiments of this application are not intended to limit the scope of the invention.

[0084] Thus, in the high-purity silicon crushing system 100 provided in this application embodiment, during operation, the silicon material to be crushed is first fed into the heating module 300 by the feeding module 200 in a sealed state. The silicon material undergoes gradient heating according to a preset temperature curve in an inert atmosphere, creating a controllable thermal difference between its surface and interior. Subsequently, after the material enters the thermal cracking module 400, liquid argon comes into contact with the high-temperature silicon material and rapidly vaporizes. With the help of instantaneous cooling and thermal stress difference, the silicon material cracks along internal cracks or interface defects, completing the diameter reduction process. At the same time, the gas collection module 500 around the thermal cracking module 400 continuously collects the vaporized argon gas and sends the gas containing trace impurities to the purification module 600. After multi-stage purification treatment in the purification module 600, the gas is liquefied by the regeneration and circulation module 700 and resupplyed to the thermal cracking module 400. The central control module 800 adjusts the feeding cycle, heating status, spray volume, gas collection status, and liquefaction return status in a coordinated manner based on the operating parameters of each module, so that the entire crushing process operates under closed, continuous, and coordinated conditions.

[0085] Through the above structure and process coordination, silicon material crushing, gas recovery and cooling medium regeneration are integrated into the same system, making the material handling path and gas circulation path independent yet coupled. This enables the system to adapt to the diameter reduction processing of high-purity silicon materials in different forms, and reduces the loss and discharge burden of low-temperature media while maintaining clean processing conditions.

[0086] refer to Figure 2 Based on the above embodiments, in one possible implementation, the feeding module 200 may include: a housing 210, a conveying mechanism 220, a material level sensing component 230, and a drive unit (not shown in the figure). In this embodiment, the housing 210 forms a conveying channel inside. The conveying mechanism 220 is disposed inside the housing 210 and is used to carry and convey silicon material. The material level sensing component 230 is disposed at one end of the conveying mechanism 220 along its length and is used to detect the material level status in the conveying channel. The drive unit is connected to the conveying mechanism 220 and is used to adjust the conveying rate according to the detection signal of the material level sensing component 230.

[0087] In a specific embodiment, the housing 210 is typically located at the upstream end of the entire high-purity silicon material crushing system 100. Its feed side is connected to the upstream storage unit or temporary storage bin, and its discharge side is sealed to the feed port of the heating module 300. A continuous conveying channel is formed inside the housing 210 along the silicon material conveying direction. The conveying mechanism 220 is arranged along the channel and maintains a predetermined gap with the inner wall of the housing 210. The material level sensing component 230 is installed at one end of the conveying mechanism 220 along its length or at a position near it, so as to detect the material stacking height or empty material status in the conveying channel in real time. The drive unit can be set at the motor mounting base outside the housing 210 or in the isolated power cavity inside the housing 210, and is connected to the conveying mechanism 220 through a sprocket, roller or transmission belt to achieve stable drive.

[0088] The conveying mechanism 220 is located inside the housing 210 and is arranged along the length of the housing 210. It forms a cooperative relationship with the inner wall of the housing 210, the guide or the support bracket. The silicon material is placed on the support surface of the conveying mechanism 220 and moves forward with the movement of the mechanism. The drive unit inputs power into the conveying mechanism 220 through the transmission shaft, coupling, chain drive or belt drive, so that it generates continuous rotation or cyclic reciprocating motion.

[0089] The material level sensing component 230 is located at one end of the conveying mechanism 220 along the length direction. It can usually be located near the feed end, near the discharge end, or in the middle monitoring position. The specific installation position depends on the requirements for material flow control sensitivity and response speed. The sensing probe is arranged facing the inside of the conveying channel and is fixed to the inner wall, top wall, or side wall of the housing 210 by a bracket, mounting plate, or adjustable slide.

[0090] The drive unit is connected to the conveying mechanism 220 and is usually installed on the outside of the housing 210 in a position that is easy to maintain, or set in the power isolation area inside the housing 210. It is connected to the conveying mechanism 220 through a reduction mechanism, coupling or synchronous transmission component. After receiving the control command from the material level sensing component 230 or the central control module 800, it can adjust the motor speed, output torque or conveying direction.

[0091] When the system starts, the silicon material to be crushed first enters the conveying channel inside the housing 210 and falls onto the bearing surface of the conveying mechanism 220. Under the initial control command, the drive unit drives the conveying mechanism 220 to run at a predetermined speed, and the silicon material moves downstream along the inside of the housing 210. As the conveying process continues, the material level sensing component 230 continuously or intermittently detects the material level in the conveying channel and feeds back the detection signal to the drive unit or the central control module 800 in real time.

[0092] When the material level is detected to be near the preset upper limit, the drive unit reduces the conveying speed to suppress accumulation, congestion, and impact wear caused by excessively fast feeding. When the material level is detected to be too low, the drive unit increases the conveying speed to ensure a stable and continuous supply of material to the downstream heating module 300. Since the housing 210 forms a closed conveying environment, the conveying mechanism 220 completes the carrying and conveying within it, and the material level detection and speed adjustment form a linked control. Therefore, the feeding module 200 can adaptively adjust the silicon material supply cycle while maintaining closed conveying conditions, thereby reducing the risk of dust, scattering, and jamming of silicon material during the feeding process, improving the continuity and stability of the conveying to downstream stations, and providing a uniform and controllable raw material supply for subsequent inert atmosphere heating and thermal cracking treatment. It should be understood that the above examples are merely illustrative, and the embodiments of this application are not intended to limit the scope of the invention. Without departing from the technical concept of this application, the housing 210, conveying mechanism 220, material level sensing component 230, and drive unit may also adopt other equivalent structures or combinations.

[0093] Based on the above embodiments, in one possible implementation, the conveying mechanism 220 is a chain or roller conveyor platform. The rollers of the roller conveyor platform adopt a segmented floating structure, and the roller surface is provided with anti-slip texture. The material level sensing component 230 consists of multiple sets of infrared or laser beam sensors arranged along the conveying direction. The drive unit is a servo motor and a frequency converter.

[0094] In a specific embodiment, the conveying mechanism 220 can be arranged at the bottom or middle of the conveying channel inside the housing 210 and maintain a sealed fit with the side wall of the housing 210 to prevent external dust from entering or material from leaking out. If a chain conveying platform is used, the chain can be connected with a support plate, scraper, or material support to form a circulating conveying structure; if a roller conveying platform is used, multiple rollers are arranged sequentially along the conveying direction and supported by frames on both sides to achieve the rolling forward movement of silicon material.

[0095] The material level sensing component 230 detects the material obstruction status through a photoelectric transmission method between the transmitter and receiver, and feeds back the detection signal to the central control module 800 or the drive unit to adjust the conveying cycle. The drive unit automatically controls the operating speed, start / stop sequence, and instantaneous feeding rate of the conveying mechanism 220 based on the signal output from the material level sensing component 230, thereby avoiding idling, excessive material accumulation, or uneven downstream feeding. In terms of position and relationship, the chain conveyor platform or roller conveyor platform is installed axially along the conveying channel inside the housing 210, with its inlet end connected to the upstream feeding port and its outlet end connected to the feeding port of the heating module 300. Multiple sets of infrared or laser photoelectric sensors are sequentially arranged at relative positions on both sides or the top of the housing 210 along the conveying direction to form multiple detection sections. The servo motor and frequency converter are typically located in the power compartment outside the housing 210 and are connected to the conveying mechanism 220 via couplings, sprocket sets, synchronous pulley sets, or reduction mechanisms.

[0096] In one possible embodiment, the chain conveyor platform can be constructed using stainless steel chain plates, alloy steel chains, or wear-resistant engineering plastic chain links. The rollers of the roller conveyor platform can be cylindrical rollers, conical rollers, or shoulder rollers, and the roller body material can be stainless steel, surface-hardened alloy steel, or metal rollers covered with a wear-resistant elastic layer. When the rollers adopt a segmented floating structure, they can be connected to the frame through elastic supports, floating shaft seats, or split brackets, allowing the rollers to generate limited displacement to buffer load changes when subjected to irregular silicon material impacts. The anti-slip texture on the roller surface can be annular knurling, spiral grooves, or dot matrix embossing to enhance the frictional traction on the bottom surface of the silicon material and reduce slippage and localized retention.

[0097] During operation, when the system starts, the servo motor, driven by the frequency converter, drives the chain conveyor platform or roller conveyor platform into the initial operating state. After the crushed silicon material enters the conveying channel from the upstream feed port, it is supported by the chain plate or roller surface and conveyed forward along the predetermined path inside the housing 210. If a roller conveyor platform is used, the segmented floating rollers will float slightly under the impact of the weight and irregular shape of the silicon material, thereby automatically compensating for local height differences and reducing the probability of material jamming. Meanwhile, the anti-slip texture on the roller surface forms a stable friction force between the silicon material and the roller surface, reducing relative slippage and maintaining continuous material flow.

[0098] Meanwhile, multiple sets of infrared or laser sensors continuously monitor the material obstruction status at different locations along the conveying channel. When the material level reaches a preset height or accumulates, the sensors output corresponding signals to the central control module 800. The central control module 800 or the drive unit then adjusts the servo motor speed and conveying cycle to match the feeding rate with the processing capacity of the downstream heating module 300. When the material level is too low, the system increases the conveying rate to maintain continuous feeding.

[0099] Based on the above analysis, it can be seen that this structure can achieve adaptive adjustment of the material level while ensuring stable silicon material conveying, reducing slippage, blockage, and material interruption caused by differences in material morphology, thereby improving the continuity, stability, and adaptability of the feeding module 200 to different types of high-purity silicon materials. It should be understood that the above examples are merely illustrative, and the embodiments of this application are not intended to limit the scope of the invention.

[0100] Based on the above embodiments, in one possible implementation, the heating module 300 may include: a heating furnace body, a heat insulation partition, heating elements, and temperature measuring elements (not shown in the figure). In this embodiment, the heating furnace body is filled with high-purity argon gas to form an inert protective atmosphere. The interior of the heating furnace body is sequentially divided into a preheating zone, a constant temperature zone, and a transition zone along the silicon material conveying direction. Heating elements are respectively disposed in each temperature zone for independently adjusting the heating temperature of each zone. Temperature measuring elements are respectively disposed in each temperature zone for real-time monitoring of the temperature of each zone and feedback to the central control module 800.

[0101] In a specific embodiment, the heating furnace body is located between the discharge end of the feeding module 200 and the inlet end of the thermal cracking module 400, and is connected to the front and rear modules respectively through sealing flanges, high-temperature resistant sealing rings, or sealing structures, so that the silicon material passes through each temperature zone sequentially in a closed conveying state without significant exchange with the outside air. The shell 210 of the heating furnace body can be made of high-temperature resistant stainless steel, nickel-based alloy, or ceramic composite insulation shell 210. Among them, high-temperature resistant stainless steel is suitable for conventional medium and high temperature conditions, nickel-based alloy is suitable for higher temperature and high cleanliness requirements, and ceramic composite insulation shell 210 helps to further reduce heat loss and maintain the stability of the temperature field inside the furnace.

[0102] In terms of structural form, the heating furnace can be a box-type furnace, a tunnel furnace, or a tubular furnace. Box-type furnaces facilitate zoned layout and maintenance, tunnel furnaces are convenient for online processing in conjunction with the continuous conveying mechanism 220, and tubular furnaces are suitable for continuous heat treatment of silicon materials with small cross-sectional areas. The length of the heating furnace is usually greater than its height and width, and the cross-sectional dimensions of the effective internal conveying channel should be slightly larger than the maximum outer dimensions of the silicon material to avoid conveying blockage. In specific designs, the total length of the furnace can be set as the sum of the lengths of the preheating zone, the isothermal zone, and the transition zone, based on the production capacity and target temperature rise rate. Typically, the lengths of the preheating zone and the isothermal zone are greater than the length of the transition zone to ensure that the silicon material has sufficient heating time. The furnace wall thickness should be designed to match the operating temperature, insulation requirements, and structural strength.

[0103] In one possible embodiment, the heat insulation partition is fixed to the inner wall, top wall, or bottom wall of the furnace, or installed in the furnace cavity through brackets, slots, and heat-resistant fasteners to form a partitioned structure. Although the temperature zones are isolated from each other to reduce heat radiation and heat convection crosstalk, the conveying channel remains connected to ensure continuous passage of silicon material. The heat insulation partition can take different forms, such as high-temperature resistant heat insulation baffles, ceramic partitions, composite insulation jackets, air gap partitions, or vacuum insulation layers. Among them, high-temperature resistant heat insulation baffles are easy to assemble and replace quickly, ceramic partitions have good thermal shock resistance, and composite insulation jackets or vacuum insulation layers are beneficial to improving insulation efficiency and reducing thermal interference between temperature zones. The thickness of the heat insulation partition is usually matched with the inner cavity size of the furnace, and its thickness should meet the requirement of reducing heat conduction while maintaining mechanical strength. In common cases, it can be designed to range from several millimeters to tens of millimeters. The height or width of the separator should cover most of the effective cross-section of the furnace cavity, with only a connecting opening reserved at the location of the conveying channel to ensure that no significant leakage occurs when silicon material passes through. At the same time, the insulation boundary should be arranged as close as possible to the conveying track to improve the independence of the temperature zone.

[0104] In one possible embodiment, heating elements are respectively disposed in each temperature zone, and can be arranged on the sidewalls, top, or bottom according to the temperature zone structure. If necessary, a symmetrical or circumferentially distributed arrangement can also be used to improve heating uniformity. The heating elements in each temperature zone are connected to the central control module 800 via independent circuits. The central control module 800 adjusts the power output of each zone individually according to the process formula, thereby enabling the preheating zone to eliminate internal temperature differences in the silicon material at a lower heating rate, the constant temperature zone to maintain the target temperature and make the internal thermal field of the silicon material more uniform, and the transition zone to smoothly introduce the silicon material into the thermal state required for the next process. The heating elements can be infrared heating elements, resistance heating elements, or induction heating elements. Infrared heating elements are suitable for rapid radiative heating of the silicon material surface, resistance heating elements facilitate uniform constant temperature control, and induction heating elements are suitable for localized or rapid heating scenarios.

[0105] In implementation, quartz radiant tubes, ceramic heating elements, or metal alloy heating wires can be used as the specific heating carriers, depending on cleanliness requirements. The arrangement density of the heating elements is adapted to the furnace volume, target temperature rise rate, and silicon material batch size. Typically, the arrangement density in the constant temperature zone is higher than that in the preheating and transition zones to ensure stable maintenance of the target temperature. The unit size can be determined based on the furnace cavity cross-section, ensuring sufficient installation and maintenance space while avoiding excessive occupation of effective conveying channels.

[0106] In one possible embodiment, temperature sensing elements are respectively disposed within each temperature zone, and their detection ends are typically arranged close to the silicon material conveying trajectory to reduce the deviation between the furnace wall temperature and the material temperature and improve temperature measurement accuracy. In terms of arrangement, the temperature sensing elements can be inserted through pre-reserved holes in the furnace wall and fixed with high-temperature resistant seals, or they can be installed in a protective sleeve inside the furnace to reduce the influence of high temperature, argon gas flow, and dust environment on the sensor body. The temperature sensing elements can be thermocouple sensors, infrared temperature probes, or fiber optic temperature sensors. Among these, thermocouple sensors have a simple structure and a wide temperature range, infrared temperature probes are suitable for non-contact online temperature measurement, and fiber optic temperature sensors have strong anti-electromagnetic interference capabilities and fast response speeds.

[0107] In high-purity environments, low-precipitation, contamination-resistant protective sleeves or ceramic encapsulation are preferred to avoid introducing impurities. The number of temperature sensing elements can be configured according to the furnace length and temperature control accuracy requirements. Typically, at least one sensing point is set for each temperature zone. For longer temperature zones, multiple sensing points can be set and distributed along the conveying direction to reflect the temperature field gradient and provide more complete temperature information to the central control module 800. The installation position should avoid locations directly exposed to excessive local radiation from the heating element to prevent overestimation of readings.

[0108] When the system starts, the silicon material to be crushed is continuously fed into the heating furnace by the feeding module 200. The furnace is pre-filled with high-purity argon to form an inert protective atmosphere to suppress oxidation, contamination, and surface reactions of the silicon material during the heating process. The silicon material first enters the preheating zone, where the corresponding heating elements gradually increase the temperature at a lower power, slowly reducing the temperature difference between the surface and the interior of the silicon material. Subsequently, the silicon material enters the constant temperature zone to receive a more stable heat input, so that it reaches the predetermined hot cracking temperature or approaches the hot cracking critical state. During this process, the temperature sensing elements continuously collect the temperature of each zone and feed it back to the central control module 800. The central control module 800 independently adjusts each heating element according to the feedback, thereby maintaining the temperature gradient between the preheating zone, the constant temperature zone, and the transition zone consistent with the set value.

[0109] As the silicon material passes through the transition zone, its temperature is gradually adjusted to a state suitable for entering the hot cracking module 400, avoiding uncontrolled fragmentation or excessive fine powder generation due to sudden temperature changes. Because the heating furnace body is protected by inert argon gas and each temperature zone is effectively isolated by heat-insulating partitions, the silicon material maintains a low oxidation risk and a relatively stable thermal field distribution throughout the heating process. This allows the thermal shock during subsequent liquid argon spraying to act more concentrated on the weak stress areas within the silicon material, which is beneficial for improving hot cracking efficiency, reducing the introduction of mechanical impurities, and minimizing uneven particle size caused by temperature fluctuations. It should be understood that the above examples are merely illustrative, and the embodiments of this application are not intended to limit the scope of the application. Without departing from the concept of this application, the specific form, quantity, material, and arrangement of the heating furnace body, heat-insulating partitions, heating elements, and temperature measuring elements can be adjusted according to the equipment scale, production capacity requirements, and cleanliness level.

[0110] Based on the above embodiments, in one possible implementation, the heating element is an infrared heating element. The temperature sensing element is a thermocouple sensor. The heat insulation separator is a high-temperature resistant heat insulation baffle, which separates adjacent temperature zones to reduce cross-contamination.

[0111] In a specific implementation, infrared heating elements are typically arranged at the radiation windows of the top, side, or bottom walls of each temperature zone, and radiate heating towards the silicon material surface in the conveying channel. Thermocouple sensors can be installed through the furnace wall and extend to a position close to the material layer to obtain measurement values ​​that are closer to the actual temperature of the silicon material. High-temperature resistant heat-insulating baffles are fixed inside the heating furnace body and sealed to the furnace wall, respectively located between the preheating zone and the constant temperature zone, and between the constant temperature zone and the transition zone, to form physical barriers and thermal isolation boundaries.

[0112] In one possible embodiment, the infrared heating element can be a quartz infrared tube, a ceramic infrared plate, or a far-infrared radiation plate; the thermocouple sensor can be a type K, type S, or type N thermocouple; and the high-temperature resistant heat insulation baffle can be an alumina ceramic plate, a silicon carbide heat insulation plate, or a fiber-reinforced refractory plate, and all of the above materials can withstand long-term heat loads in a high-purity argon atmosphere. It should be understood that the above examples are merely illustrative, and the embodiments described in this application are not intended to limit the scope of the invention.

[0113] In terms of shape and size, infrared heating elements can be arranged in the form of strips, plates, or tubes. Their radiation coverage should match the cross-sectional area of ​​each temperature zone. They are usually arranged in rows along the length of the temperature zone to ensure uniform heating. The measuring point of the thermocouple sensor is generally located at a certain distance above or to the side of the silicon material to avoid direct contact with the silicon material, which could cause wear or temperature measurement lag. The thickness of the high-temperature heat-insulating baffle is usually set within a range that can form an effective heat insulation effect without significantly encroaching on the conveying space. It is preferably a few millimeters to tens of millimeters. The specific thickness can be adjusted according to the size of the heating furnace and the target temperature difference. Its height and width usually cover most of the cross-sectional area of ​​the temperature zone to reduce heat exchange at the boundary.

[0114] During operation, the infrared heating element outputs radiant heat in a continuous or pulsed manner. Thermocouple sensors collect the temperature of each temperature zone according to a set cycle and send signals to the central control module 800. The central control module 800 independently adjusts the power of each infrared heating element based on the feeding speed, silicon material type, and target hot cracking conditions. The high-temperature resistant heat insulation baffle remains stationary during operation to block heat diffusion between adjacent temperature zones, thereby making the temperature distribution of each temperature zone more stable. The silicon material can be uniformly heated under a controllable temperature difference and enter the subsequent hot cracking module 400.

[0115] Based on the above analysis, it can be seen that this structure can reduce temperature fluctuations caused by heat transfer between temperature zones, improve the accuracy and repeatability of gradient heating, and thus facilitate the formation of consistent thermal shock conditions during subsequent liquid argon spray thermal cracking. This reduces uneven crushing caused by local overheating or insufficient heating, thereby improving the stability of high-purity silicon material crushing and processing and the consistency of finished products.

[0116] refer to Figure 3 Based on the above embodiments, in one possible implementation, the thermal cracking module 400 may include: a micro-negative pressure sealed cavity 410, an atomizing spray assembly 420, and a supply pipeline 430. In this embodiment, the feed end of the micro-negative pressure sealed cavity 410 is sealed and connected to the discharge end of the heating module 300. The atomizing spray assembly 420 is annularly disposed inside the micro-negative pressure sealed cavity 410 for spraying liquid argon circumferentially onto the silicon material. The supply pipeline 430 connects an external liquid argon source to the atomizing spray assembly 420 for continuously supplying liquid argon to the atomizing spray assembly 420.

[0117] In a specific embodiment, the micro-negative pressure sealed cavity 410 is located downstream of the heating module 300. Its inlet end and the outlet end of the heating module 300 are sealed together through a sealing flange, sealing sleeve or flexible connection transition section, so that the high-temperature silicon material from the heating module 300 can directly enter the hot cracking area without interrupting the process atmosphere. The cavity can be equipped with a guide trough, support platform or buffer drop plate to keep the silicon material on a predetermined residence trajectory in the spray area.

[0118] In one possible embodiment, the micro-negative pressure sealed cavity 410 can be manufactured as a cylindrical, elliptical, or polygonal box structure. The cavity body can be made of stainless steel, low-temperature alloy steel, or a composite shell 210 with an insulation layer to balance structural strength and insulation performance under low-temperature conditions. In other exemplary embodiments, a low-temperature resistant metal shell 210 with a polished inner wall, a double-layer shell 210 with an outer insulation layer, or a locally reinforced rib structure can also be used to adapt to different production capacity and heat load requirements.

[0119] The effective volume inside the chamber is typically matched to the amount of silicon material processed in a single batch. The diameters of the inlet and outlet should allow for smooth passage of the silicon material without causing jamming. The length of the spray zone should at least cover the dwell distance required for the silicon material to complete thermal shock. The radial clearance between the inner diameter of the chamber and the radius of the nozzle arrangement should be controlled within a range that allows for the formation of a uniform cooling mist to ensure sufficient contact between liquid argon and liquid argon and to avoid localized overcooling.

[0120] The atomizing spray assembly 420 is arranged in a ring inside the micro-negative pressure sealed cavity 410. It is typically arranged circumferentially along the inner wall of the cavity as a spray ring assembly, an annular spray frame, or a distributed nozzle array. The spray direction of the nozzles is towards the silicon material drop area, the material receiving area, or the conveying passage area to achieve circumferential all-round coverage spraying. Structurally, the atomizing spray assembly 420 can be connected to the inner wall of the cavity through a bracket, flange seat, or low-temperature resistant fixing seat, and forms a stable connection with the supply pipeline 430.

[0121] In one possible embodiment, the atomizing spray assembly 420 may include an annular main pipe and a plurality of atomizing nozzles 421 distributed at equal angles. The atomizing nozzles 421 may be fan-shaped atomizing nozzles 421, conical atomizing nozzles 421, or multi-hole micro-nozzles. The spray frame may be made of stainless steel, copper alloy, or low-temperature resistant aluminum alloy to withstand the cryogenic impact of liquid argon. Multi-layer concentric spray rings, adjustable-angle nozzles, or rotating nozzle structures may also be used to enhance the coating of irregularly shaped silicon surfaces.

[0122] The nozzle spacing is generally matched according to the inner diameter of the cavity and the size of the silicon material to ensure that there is a moderate overlap between the spray coverage areas without forming obvious blind spots. The nozzle outlet diameter, spray cone angle and distance from the silicon material surface should be coordinated with the liquid argon flow rate to achieve rapid heat exchange and uniform cooling without causing large droplet impact damage.

[0123] One end of the supply pipeline 430 is connected to an external liquid argon source, and the other end is connected to the atomizing spray assembly 420. The pipeline is laid along the outside of the micro-negative pressure sealed cavity 410 and is isolated from the cavity by a low-temperature sealing joint, vacuum seal or cold-insulated wall-penetrating joint at the cavity-penetrating position to avoid cold leakage and reduced air tightness.

[0124] In one possible embodiment, the supply line 430 may be a cryogenic insulated pipe, a vacuum jacketed pipe, or a multi-layer insulated composite pipe. Its inner pipe may be a stainless steel pipe, a cryogenic alloy steel pipe, or a coated metal pipe, and its outer layer may be an insulation layer, a vacuum layer, or a reflective insulation layer. In other exemplary embodiments, the supply line 430 may also be equipped with a throttle valve, a pressure regulating valve, a flow meter, or an electromagnetic shut-off valve to achieve precise control of the liquid argon supply.

[0125] The inner diameter of the pipeline should be designed according to the required liquid argon flow rate, the number of atomizing nozzles 421, and the single spraying time, so that significant throttling vaporization does not occur during the liquid supply process, while ensuring a stable liquid replenishment for the atomizing spray assembly 420. The thickness of the pipeline insulation layer is usually adapted to the ambient temperature difference, the transportation distance, and the allowable heat loss. For long-distance transportation, a larger diameter and a higher grade of cold insulation structure can be used to reduce liquid argon loss.

[0126] When the system starts, the high-temperature silicon material output by the heating module 300 enters the slightly negative pressure sealed cavity 410 through a sealed connection. The slightly negative pressure state maintained in the cavity makes it difficult for external air to enter, thus maintaining a stable inert environment before and after thermal cracking. Subsequently, under the control of the central control module 800, the supply pipeline 430 continuously delivers external liquid argon to the annularly arranged atomizing spray assembly 420. After being atomized by the atomizing nozzle 421, the liquid argon is sprayed uniformly along the circumference of the silicon material, causing the surface of the silicon material to cool rapidly in a very short time and forming a large temperature gradient and thermal stress difference. Because the spray is arranged in a ring, all heated surfaces of the silicon material can receive a basically uniform cooling effect, which is conducive to the uniform cracking of block material, edge material, or recycled silicon material under different shape conditions. At the same time, the argon gas generated during the endothermic vaporization of liquid argon continues to fill the cavity and is collected and recovered by the subsequent gas collection module 500, so that the low-temperature medium can be recycled.

[0127] Based on the above working process, it can be seen that the thermal cracking module 400, under the synergistic effect of a sealed environment, slight negative pressure, and circumferential atomizing spray, can achieve rapid cooling and uniform thermal cracking of heated silicon material. This not only helps reduce the risk of pulverization caused by the introduction of external impurities and uneven cooling, but also improves the adaptability of silicon materials of different forms and provides a stable operating condition foundation for subsequent argon recovery, purification, and regeneration cycles. It should be understood that the above examples are merely illustrative, and the embodiments in this application are not intended to limit the scope of the application. The relevant structural forms, material selections, and dimensional parameters can all be equivalently adjusted according to actual process requirements.

[0128] Continue to refer to Figure 3 Based on the above embodiments, in one possible implementation, the atomizing spray assembly 420 includes a plurality of atomizing nozzles 421 evenly distributed circumferentially along the inner wall of the cavity. Each atomizing nozzle 421 is arranged in a ring around the silicon material placement area on the horizontal plane to form a 360° full-coverage spray area.

[0129] In a specific embodiment, the atomizing spray assembly 420 includes multiple atomizing nozzles 421 evenly distributed circumferentially along the inner wall of the cavity. Each atomizing nozzle 421 is arranged in a ring around the silicon material placement area on a horizontal plane, forming a 360° full-coverage spray area. Specifically, the multiple atomizing nozzles 421 are typically fixedly installed on the inner wall of the micro-negative pressure sealed cavity 410, on a spray ring support, or on a ring-shaped spray pipe, and are connected to an external liquid argon source via a supply pipe 430. The nozzles of each atomizing nozzle 421 face the center of the silicon material placement area or are arranged obliquely towards the center at a certain angle, thereby dispersing the liquid argon to form a continuous spray cloud surrounding the silicon material. Based on this arrangement, the atomizing nozzles 421 not only form a stable circumferential installation relationship with the inner wall of the cavity, but also form a concentric or near-concentric correspondence with the silicon material placement area on a horizontal plane, ensuring that all aspects of the silicon material surface receive similar cooling effects.

[0130] In one possible embodiment, the atomizing nozzle 421 can be any one or a combination of a fan-shaped atomizing nozzle 421, a conical atomizing nozzle 421, or a multi-hole micro-nozzle to adapt to different silicon material sizes and spray intensity requirements. The nozzle material can be low-temperature stainless steel, low-temperature alloy, or ceramic nozzles to meet the requirements of low-temperature resistance, impact resistance, and wear resistance under liquid argon conditions. The nozzle structure can be configured as a circular orifice, a slit orifice, or a multi-stage constricted orifice to adjust the droplet size and spray diffusion angle. The nozzle arrangement can also be adjusted according to the inner diameter of the cavity, the size of the silicon material placement area, and the required spray uniformity. For example, a single-layer annular arrangement, a double-layer staggered annular arrangement, or a multi-layer concentric annular arrangement can be used, wherein the spacing between each atomizing nozzle 421 matches its spray coverage area, ensuring moderate overlap between adjacent spray areas without excessive superposition, thereby avoiding localized overcooling or spray blind spots. It should be understood that the above examples are merely illustrative, and the embodiments of this application are not intended to limit the scope of the application.

[0131] In terms of size and proportion, the number of atomizing nozzles 421, their nozzle diameter, and spray angle are typically matched to the diameter of the micro-negative pressure sealed cavity 410, the diameter of the silicon material placement area, and the silicon material stacking height. For example, the nozzle diameter can be designed to be in the millimeter or sub-millimeter range based on the liquid argon flow rate, and the nozzle center distance can be arranged according to a certain proportion of the spray coverage radius to form a continuous cooling zone around the silicon material in a 360° coverage area. If the cavity diameter is large, the number of atomizing nozzles 421 can be appropriately increased or a double-layer spray ring can be set to ensure sufficient coverage in both the horizontal and vertical sections. If the silicon material placement area is small, the spacing between the atomizing nozzles 421 can be reduced and the effective action distance from the nozzle to the silicon material surface can be shortened accordingly, thereby improving the local heat exchange efficiency. The above dimensional relationships are not limited to a fixed value but are designed to match the cavity structure, liquid argon supply pressure, and target thermal cracking intensity.

[0132] When the system starts, liquid argon is stably supplied through the supply pipeline 430 and enters multiple atomizing nozzles 421 evenly arranged circumferentially along the inner wall of the cavity. The atomizing nozzles 421 disperse the liquid argon into fine droplets or mist particles, which are then sprayed synchronously along the annular direction onto the silicon material placement area. This ensures that the surface of the silicon material and its surrounding space are continuously and uniformly cooled at a low temperature on the horizontal plane. Because each atomizing nozzle 421 forms a 360° full-coverage spray area around the silicon material placement area, the heat transfer intensity experienced by different parts of the silicon material tends to be consistent. This effectively reduces the temperature difference deviation and stress unevenness caused by unilateral spraying, allowing the heated silicon material to form uniform thermal stress during rapid cooling and causing cracking along natural cracks, grain boundaries, or weak points.

[0133] Meanwhile, the annular arrangement reduces spray dead zones and minimizes localized liquid argon accumulation, thereby improving thermal cracking efficiency and fragmentation consistency. Due to the uniform spray distribution, liquid argon utilization is also increased, reducing media waste and temperature field disturbances within the cavity caused by excessive spraying.

[0134] Therefore, the atomizing spray assembly 420 can achieve full circumferential cooling of silicon material, while helping to improve the stability, uniformity and continuity of the thermal cracking process of high-purity silicon material, and reduce the risk of pulverization, residue and repeated processing caused by uneven spraying.

[0135] refer to Figure 4 Based on the above embodiments, in one possible implementation, the gas collection module 500 may include: an annular gas collection main pipeline 510, multiple gas collection branch pipelines 520, and a centralized gas outlet 530. In this embodiment, the annular gas collection main pipeline 510 is arranged circumferentially around the outer wall of the thermal cracking module 400, and the interior of the annular gas collection main pipeline 510 maintains a slightly negative pressure state. Multiple gas collection branch pipelines 520 are evenly distributed on the annular gas collection main pipeline 510, and the inlet end of each gas collection branch pipeline 520 is connected to the cavity wall of the thermal cracking module 400. The centralized gas outlet 530 is disposed on the annular gas collection main pipeline 510 and is used to collect the argon gas collected by each gas collection branch pipeline 520 and output it to the purification module 600.

[0136] In a specific embodiment, the annular gas collecting main pipeline 510 is arranged circumferentially around the outer wall of the hot cracking module 400, and the interior of the annular gas collecting main pipeline 510 is maintained under a slight negative pressure. Multiple gas collecting branch pipelines 520 are evenly distributed on the annular gas collecting main pipeline 510, and the inlet end of each gas collecting branch pipeline 520 is connected to the cavity wall of the hot cracking module 400. A centralized gas outlet 530 is provided on the annular gas collecting main pipeline 510, used to collect the argon gas collected by the various gas collecting branch pipelines 520 and output it to the purification module 600.

[0137] In one possible embodiment, the annular gas collection main pipeline 510 is typically arranged as a closed loop or near-closed loop along the circumference of the outer wall of the hot cracking module 400, and is fixed to the outside of the hot cracking module 400 shell by support clamps, welding seats, or insulation brackets to ensure that it maintains a predetermined distance from the outer wall of the hot cracking cavity and does not affect the thermal structure of the hot cracking module 400. Its shape can be a single-layer circular pipe, a double-layer jacketed pipe, or a special-shaped annular pipe with an insulation layer. The material can be stainless steel, low-temperature resistant alloy steel, or composite insulation metal pipe to balance low-temperature impact resistance, corrosion resistance, and structural strength.

[0138] In some embodiments, the inner diameter of the annular gas collecting main pipeline 510 can be set according to the amount of vaporization during thermal cracking, and the circumferential length corresponds to the outer circumferential length of the thermal cracking cavity, usually slightly larger than the outer circumferential length to form a complete loop and reserve connection margin. Multiple gas collecting branch pipelines 520 can be connected to the annular gas collecting main pipeline 510 through flanges, welding, compression fittings, or quick-connect couplings, and the other end is connected to the gas intake hole, guide hole, or wall connecting cavity opened on the cavity wall of the thermal cracking module 400, thereby realizing the directional export of vaporized argon gas in the cavity.

[0139] Structurally, the gas collecting branch pipes 520 can be straight, slightly bent, or flexible corrugated, and the material can be stainless steel thin-walled pipe, low-temperature resistant metal flexible hose, or composite pipe with an inner insulation layer. Their number can be configured according to the circumferential dimensions of the hot-cracking chamber and the gas generation intensity, typically in three, four, six, or more groups to ensure uniform circumferential coverage. The inner diameter of the gas collecting branch pipes 520 is generally less than or equal to the inner diameter of the annular gas collecting main pipe 510 to maintain a match between the flow velocity in the branch pipes and the collecting capacity of the main pipe. The length of the gas collecting branch pipes 520 is usually controlled within a range that allows them to closely adhere to the chamber wall while avoiding excessive pressure drop. The centralized gas outlet 530 is a convergence output interface located on the annular gas collecting main pipe 510. Its function is to collect the argon gas collected from each gas collecting branch pipe 520 and guide it to the purification module 600 for subsequent impurity removal and recirculation.

[0140] The centralized gas outlet 530 is preferably located at the downstream convergence point of the annular gas collecting main pipeline 510, and can be sealed to the external purification pipeline through flange interfaces, welded interfaces, or quick-connect interfaces. If necessary, a pressure monitoring port, flow regulating valve, or one-way check valve can also be installed near the centralized gas outlet 530 to enhance the stability of the gas path control. The diameter of the centralized gas outlet 530 is usually matched with the flow capacity of the main flow section of the annular gas collecting main pipeline 510 to avoid significant throttling at the confluence point, thereby ensuring continuous and stable micro-negative pressure suction. It should be understood that the above examples are only illustrative, and the embodiments of this application are not limited herein. The specific structural form, material selection, and size parameters of the annular gas collecting main pipeline 510, gas collecting branch pipeline 520, and centralized gas outlet 530 can be adaptively adjusted according to the volume, heat load, argon production, and system negative pressure requirements of the thermal cracking module 400, as long as the negative pressure collection and orderly output of the vaporized argon during the thermal cracking process can be achieved.

[0141] When the system starts, the hot-crack module 400 begins liquid argon spraying after the heated silicon material enters the cavity. The silicon surface undergoes rapid cooling, resulting in hot cracking and the vaporization of a large amount of argon. Under the influence of localized heating, pressure disturbances, and slight negative pressure suction, the gas within the cavity gradually diffuses towards the vicinity of the cavity wall. At this time, the annular gas collection main pipe 510, circumferentially positioned close to the outer wall of the hot-crack module 400, forms a continuous suction boundary under the influence of internal slight negative pressure. Multiple evenly distributed gas collection branch pipes 520 simultaneously extract gas from the cavity wall connection points, allowing argon generated at different circumferential positions to be introduced into the annular gas collection main pipe 510 within a short path and rectified. The gas is then uniformly output to the purification module 600 via the centralized outlet 530. Because the gas collection points are distributed circumferentially and the annular gas collection main pipe 510 is annularly arranged, a relatively balanced suction field is formed around the cavity, reducing the possibility of localized gas accumulation, backflow, and escape, and minimizing argon loss at the opening of the hot-crack cavity. Meanwhile, the slightly negative pressure environment allows the gas escaping from the cavity to be continuously recovered without significantly interfering with the liquid argon spraying and silicon thermal cracking process, thus providing a relatively stable gas source for subsequent purification and regeneration cycles.

[0142] Based on the above analysis, it can be seen that the gas collection module 500 can achieve efficient, uniform and continuous collection of thermal cracking argon gas without adding complex moving parts, which is beneficial to reducing argon gas consumption, reducing tail gas emissions and improving the airtightness and operational safety of the entire high-purity silicon crushing system 100.

[0143] Based on the above embodiments, in one possible implementation, the purification module 600 may include a primary filtration unit, a secondary dehydration unit, and a tertiary distillation unit (not shown in the figure) connected in sequence. In this embodiment, the primary filtration unit is used to intercept silicon powder particles in argon gas, the secondary dehydration unit is used to condense and remove water vapor from argon gas, and the tertiary distillation unit is used to remove trace impurity gases from argon gas.

[0144] In one possible embodiment, a primary filtration unit, a secondary dehydration unit, and a tertiary distillation unit are sequentially connected in series along the airflow direction between the outlet of the gas collection module 500 and the regeneration circulation module 700. The outlet of the preceding unit is sealed to the inlet of the following unit, thus forming a continuous purification path from top to bottom or from front to back. The primary filtration unit can be arranged on one side close to the gas collection module 500 to receive high-temperature or room-temperature dusty argon gas from the thermal cracking module 400. The secondary dehydration unit is located downstream of it to further remove condensable water vapor from the gas after particle removal. The tertiary distillation unit is located at the very end, which further purifies the already basically dust-free and dehumidified argon gas before sending it to the regeneration circulation module 700. To ensure the tightness of the connection between the units, the units are usually connected by flanges, clamps, or welded pipe connections. Low-temperature resistant sealing rings can be configured at the connection points to adapt to temperature fluctuations and pressure changes during the argon gas circulation process.

[0145] In one possible embodiment, the primary filtration unit can employ one or more combinations of sintered metal filter elements, ceramic filter elements, or multi-layer pleated filter screens. Sintered metal filter elements are suitable for applications requiring high strength, low temperature resistance, and backflushing regeneration; ceramic filter elements are suitable for applications requiring high temperature and corrosion resistance; and multi-layer pleated filter screens facilitate obtaining a larger filtration area and lower pressure drop. The filtration precision can be matched according to the silica powder particle size, typically set to the micrometer to ten-micrometer level, to effectively trap pulverized particles generated during thermal cracking without excessively increasing gas resistance.

[0146] The secondary dehydration unit can be constructed using one or more of the following methods: a condenser, a cold trap, or an adsorption drying tower. The condenser uses low-temperature heat exchange to condense and precipitate water vapor; the cold trap further captures low-content moisture; and the adsorption drying tower utilizes molecular sieves, activated alumina, or composite adsorbents to reduce residual humidity. Its heat exchange area, adsorbent loading, or cold trap volume can be configured based on the argon flow rate and allowable dew point to ensure dehydration efficiency and continuous operation.

[0147] The tertiary distillation unit can employ one or more of the following structures: cryogenic distillation column, molecular sieve purification column, or composite distillation column. Cryogenic distillation columns achieve deep separation based on the difference in boiling points of the components; molecular sieve purification columns can be used to adsorb and remove trace impurity gases; and composite distillation columns combine cryogenic separation with adsorption purification to improve overall purification efficiency. The column diameter, height, or bed thickness is typically matched to the gas volume, separation difficulty, and purity requirements. A slender structure with a diameter smaller than height is usually used to increase the gas-liquid or gas-solid contact area. The shell 210 and internal liquid and gas contact components of each unit can be made of stainless steel, aluminum alloy, or cryogenic alloy to balance corrosion resistance, low-temperature toughness, and processing stability. If the system operating temperature is even lower, a double-layer vacuum insulation structure or an external wall cold insulation layer can be used in critical areas to reduce cold loss.

[0148] When the system starts up, the argon gas generated in the thermal cracking module 400 and collected by the gas collection module 500 enters the purification module 600 under a slight negative pressure. First, it passes through a primary filtration unit, where silica particles in the gas flow are trapped by the filter element or screen. Particulate impurities are removed by a backflushing ash removal mechanism or by periodically replacing the filter media, thus preventing them from entering subsequent stages and causing mechanical wear or heat transfer blockage. The argon gas then enters a secondary dehydration unit, where water vapor in the gas condenses on the low-temperature heat exchange surface or is adsorbed and removed by the drying medium, significantly lowering the gas dew point and preventing frost, ice blockage, and increased flow resistance during subsequent liquefaction and recirculation. After dehydration, the argon gas enters a tertiary distillation unit, where trace impurities are further removed through low-temperature separation, selective adsorption, or distillation mass transfer processes, ensuring the purity of the output argon gas meets the requirements for regeneration. The purified argon gas then enters the regeneration circulation module 700 for liquefaction and is recirculated back to the thermal cracking module 400, thus forming a stable closed-loop cycle.

[0149] Based on the above analysis, it can be seen that the three-stage series purification path can purify the recovered argon gas containing dust, moisture, and trace impurities in stages, which reduces the pollution and failure risk of the liquefaction system, improves the argon gas recovery and utilization rate and cycle stability, and reduces the amount of fresh argon gas replenishment and emission losses. It should be understood that the above examples are merely illustrative, and the embodiments in this application are not intended to be limiting. Without departing from the technical concept of this application, the specific structure, materials, and parameters of the primary filtration unit, the secondary dehydration unit, and the tertiary distillation unit can be adjusted according to the gas volume, purity target, and equipment scale.

[0150] Based on the above embodiments, in one possible implementation, the regeneration circulation module 700 may include a compressor unit and a liquefaction unit (not shown in the figure). In this embodiment, the compressor unit is used to pressurize the purified argon gas, and the liquefaction unit is used to cool and liquefy the pressurized argon gas into liquid argon. The liquid argon outlet is connected to the liquid argon supply pipeline 430 of the thermal cracking module 400 through a pipeline, forming a closed-loop circulation circuit.

[0151] In a specific implementation, the compressor unit is typically located downstream of the outlet of the purification module 600 and connected to the central control module 800 to receive purified argon gas and output it to the liquefaction unit according to set operating conditions. The liquefaction unit is located downstream of the compressor unit, with its inlet connected to the compressor unit's outlet. Its outlet is connected to the liquid supply end of the thermal cracking module 400 via a liquid argon supply pipeline 430. To ensure stable cryogenic transport, the liquid argon outlet can be further connected to the liquid argon supply pipeline 430 via a storage tank, pressure regulator, or buffer to absorb pressure fluctuations and maintain continuous thermal cracking spray flow. The pipeline preferably uses cryogenic stainless steel pipes, vacuum insulated pipes, or composite insulated pipes to reduce cold loss during transport and prevent frost formation on the outer wall. The connection between the compressor unit and the liquefaction unit should ensure unidirectional continuous gas flow, and its processing capacity should match the gas output of the purification module 600 and the liquid argon demand of the thermal cracking module 400, thereby enabling stable operation of the closed-loop circulation circuit.

[0152] In one possible embodiment, the compressor unit may be a screw compressor unit, a reciprocating compressor unit, or a centrifugal compressor unit to adapt to different flow and pressure levels. The liquefaction unit may be a plate heat exchange liquefaction unit, a cold box liquefaction unit, or a cascade refrigeration liquefaction unit to improve low-temperature heat exchange efficiency and liquefaction stability. The connecting pipes, valves, and joints in the closed-loop circulation loop may be made of austenitic stainless steel, low-temperature alloy steel, or membrane-coated composite pipe materials to meet the requirements of argon purity maintenance and low-temperature resistance to brittle fracture. It should be understood that the above examples are merely illustrative, and the embodiments of this application are not intended to limit the scope of the invention.

[0153] The rated processing capacity of the compressor unit should be compatible with the continuous gas output of the purification module 600, and can usually be set slightly higher than the average reflux requirement of the system to allow for fluctuations in operating conditions. The cooling capacity of the liquefaction unit should meet the phase change heat load required for liquid argon recirculation, and its outlet pipe diameter should be coordinated with the pipe diameter of the liquid argon supply pipeline 430 of the thermal cracking module 400 to ensure that the flow rate, pressure drop, and spray atomization effect are within the preset range. If the system uses a storage tank buffer, the tank volume can be configured according to the amount of argon gas recovered per unit time and the peak liquid consumption of the thermal cracking module 400 to maintain stable liquid supply under continuous production conditions.

[0154] When the system starts up, the liquid argon sprayed in the thermal cracking module 400 rapidly cools the heated silicon material, causing it to crack due to thermal stress differences. The vaporized argon gas is collected by the gas collection module 500 and sent to the purification module 600. After primary filtration, secondary dehydration, and tertiary distillation to remove silicon powder, water vapor, and trace impurities, the gas is received by the regeneration and circulation module 700 and pressurized by the compressor unit. The pressurized argon gas then enters the liquefaction unit, where it is further cooled and converted into liquid argon by the refrigeration circuit. The liquid argon is then returned to the liquid argon supply pipeline 430 of the thermal cracking module 400 through the liquid argon outlet and corresponding pipelines, and re-participates in the spray cooling process.

[0155] Because this path realizes a closed-loop cycle from the argon gas generated by thermal cracking to purification, pressurization, liquefaction and then back to supply, the system can maintain continuous operation with a low medium replenishment amount, while reducing argon gas exhaust loss and operating costs, and alleviating the burden of external gas supply and waste gas treatment.

[0156] Meanwhile, the closed-loop circulation system also helps stabilize the liquid supply pressure and flow rate of the thermal cracking module 400, reducing uneven crushing caused by medium fluctuations, thereby improving the continuity, cleanliness, and safety of the high-purity silicon crushing process. It should be understood that the above examples are merely illustrative, and the embodiments described herein are not intended to limit the scope of the invention.

[0157] This application also provides a processing method for a high-purity silicon material crushing system 100. First, an adaptive closed feeding module 200 achieves uniform, closed, and automatic feeding of the silicon material, preventing external contamination. Then, in a heating module 300, under the protection of high-purity argon, a three-stage gradient heating is used to raise the temperature to 620℃–830℃, maintaining an axial temperature difference of 170℃–190℃ for 2–4 minutes, creating a uniform thermal stress field inside the silicon material. Next, the heated silicon material enters a thermal cracking module 400, where high-purity liquid argon is atomized and sprayed through a ring-shaped distributed nozzle, achieving rapid cooling and causing directional thermal cracking along the primary grain boundaries to obtain a regular blocky finished product, while significantly reducing dust generation.

[0158] During the thermal cracking process, a large amount of argon gas instantly vaporizes, and the gas collection module 500 achieves full closed-loop recovery, eliminating any fugitive leakage. The collected argon gas containing impurities then passes through the purification module 600, which effectively removes particulate matter, water vapor, and impurities such as nitrogen and oxygen, restoring it to a high-purity state. The purified argon gas enters the regeneration and circulation module 700, where it is cryogenically liquefied and then returned to the liquid argon storage tank, achieving a closed-loop recycling of argon gas and significantly reducing operating costs. Finally, the thermally cracked silicon material is precisely separated into finished silicon material and fine powder based on particle size through a closed-loop airflow sorting device. The finished product is stored directly, while the powder is recycled for subsequent reuse. The entire process is green and efficient, combining economic benefits with environmental friendliness.

[0159] In this embodiment, the high-purity silicon material crushing system 100 provided by this application solves the pollution problems in the prior art, such as the introduction of metal impurities by mechanical crushing, silicon material oxidation caused by water-blast crushing, and the generation of silicon nitride impurities by liquid nitrogen-assisted crushing, through the coordinated design of the heating module 300 and the thermal cracking module 400. The heating module 300 forms a controllable temperature difference through gradient temperature control, so that the internal stress distribution of silicon material is uniform, avoiding uneven thermal cracking or oxidation reaction caused by local overheating. The thermal cracking module 400 uses an inert cooling medium that does not react with the silicon matrix at high temperatures, completely avoiding the risks of nitriding, oxidation, and metal contamination. The combination of the gas collection module 500 and the purification module 600 realizes full recovery and deep purification of argon gas, eliminating the waste of direct gas discharge and the safety hazard of asphyxiation. The liquid argon regeneration module compresses and liquefies the purified argon gas and returns it to the system for recycling, significantly reducing raw material loss. The central control module 800 adapts to the processing needs of multiple types of silicon materials through linkage control, without the need to change equipment or adjust the process, realizing universal, pollution-free, and low-loss high-purity silicon material crushing processing.

[0160] The various embodiments or implementation methods described in this specification are presented in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other.

[0161] It should be noted that phrases such as "in specific implementations," "in some embodiments," "in this embodiment," and "exemplarily" in the specification indicate that the described embodiments may include specific features, structures, or characteristics, but not every embodiment necessarily includes that specific feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Moreover, when a specific feature, structure, or characteristic is described in connection with an embodiment, implementing such a feature, structure, or characteristic in conjunction with other embodiments, whether explicitly described or not, is within the knowledge scope of those skilled in the art.

[0162] Generally speaking, terms should be understood at least in part by their use in context. For example, at least in part by context, the term "one or more" as used in the text can be used to describe any feature, structure, or characteristic of the singular meaning, or a combination of features, structures, or characteristics of the plural meaning. Similarly, at least in part by context, terms such as "a" or "the" can also be understood to convey either singular or plural usage.

[0163] It should be readily understood that “on,” “above,” and “on top of” in this disclosure should be interpreted in the broadest manner, such that “on” means not only “directly on something” but also “on something” with an intermediate feature or layer therebetween, and that “above” or “on top of” means not only “on something” but also “on something” without an intermediate feature or layer therebetween (i.e., directly on something).

[0164] Furthermore, for ease of explanation, spatially relative terms such as "below," "below," "under," "above," and "above" may be used to describe the relationship of one element or feature relative to other elements or features as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation other than those shown in the figures. The device may have other orientations (rotated 90 degrees or in other orientations), and the spatially relative descriptive terms used herein may be interpreted accordingly.

[0165] Finally, it should be noted that other embodiments of this application will readily conceive of by those skilled in the art upon consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein, and is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and alterations may be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A high-purity silicon material crushing system, characterized in that, include: A feeding module (200) is used to convey the silicon material to be crushed to the downstream station in a closed manner; A heating module (300) is sealed to the discharge end of the feeding module (200) and is used to perform gradient heating of silicon material under an inert atmosphere; A thermal cracking module (400) is connected to the discharge end of the heating module (300) and is used to spray liquid argon cooling medium onto the heated silicon material to cause thermal cracking of the silicon material. A gas collection module (500) is disposed on the outer periphery of the thermal cracking module (400) and is used to collect argon gas generated by vaporization inside the thermal cracking module (400). Purification module (600), which is connected to the outlet of gas collection module (500), is used to perform multi-stage purification of collected argon gas; A regeneration circulation module (700) is connected to the outlet of the purification module (600) and is used to liquefy the purified argon gas and supply it back to the thermal cracking module (400). A central control module (800) is electrically connected to each module and is used to control the coordinated operation of each module.

2. The high-purity silicon material crushing system according to claim 1, characterized in that, The feeding module (200) includes: The housing (210) has a conveying channel inside; A conveying mechanism (220) is disposed within the housing (210) and is used to carry and convey silicon material; A material level sensing component (230) is disposed at one end of the conveying mechanism (220) along the length direction and is used to detect the material level status in the conveying channel; A drive unit connected to the conveying mechanism (220) is used to adjust the conveying rate according to the detection signal of the material level sensing component (230).

3. The high-purity silicon material crushing system according to claim 2, characterized in that, The conveying mechanism (220) is a chain or roller conveying platform. The rollers of the roller conveying platform adopt a segmented floating structure, and the roller surface is provided with anti-slip texture. The material level sensing component (230) consists of multiple sets of infrared or laser beam sensors arranged along the conveying direction; The drive unit is a servo motor and a frequency converter.

4. The high-purity silicon material crushing system according to claim 1, characterized in that, The heating module (300) includes: A heating furnace body is provided, the interior of which is filled with high-purity argon gas to form an inert protective atmosphere; The heat-insulating partition divides the interior of the heating furnace body into a preheating zone, a constant temperature zone, and a transition zone along the silicon material conveying direction. Heating elements are respectively disposed in each temperature zone for independently adjusting the heating temperature of each temperature zone; Temperature sensing elements are respectively set in each temperature zone to monitor the temperature of each temperature zone in real time and feed it back to the central control module (800).

5. The high-purity silicon material crushing system according to claim 4, characterized in that, The heating element is an infrared heating element; The temperature sensing element is a thermocouple sensor; The heat insulation partition is a high-temperature resistant heat insulation baffle, which separates adjacent temperature zones to reduce heat interference.

6. The high-purity silicon material crushing system according to claim 1, characterized in that, The thermal cracking module (400) includes: A micro-negative pressure sealed cavity (410) is provided, wherein the feed end of the micro-negative pressure sealed cavity (410) is sealed and connected to the discharge end of the heating module (300); Atomizing spray assembly (420) is arranged in a ring inside the micro-negative pressure sealed cavity (410) for spraying liquid argon to the silicon material in all directions around the periphery; A supply line (430) is connected to an external liquid argon source and the atomizing spray assembly (420) for continuously supplying liquid argon to the atomizing spray assembly (420).

7. The high-purity silicon material crushing system according to claim 6, characterized in that, The atomizing spray assembly (420) includes a plurality of atomizing nozzles (421) evenly distributed circumferentially along the inner wall of the cavity. Each of the atomizing nozzles (421) is arranged in a ring around the silicon material placement area on the horizontal plane to form a 360° full-coverage spray area.

8. The high-purity silicon material crushing system according to claim 1, characterized in that, The gas collection module (500) includes: An annular gas collection main pipeline (510) is arranged circumferentially around the outer wall of the hot cracking module (400), and the interior of the annular gas collection main pipeline (510) is kept under a slight negative pressure. Multiple gas collecting branch pipes (520) are evenly distributed on the annular gas collecting main pipe (510), and the air inlet end of each gas collecting branch pipe (520) is connected to the cavity wall of the thermal cracking module (400). A centralized gas outlet (530) is provided on the annular gas collection main pipeline (510) to collect the argon gas collected by each of the gas collection branch pipelines (520) and output it to the purification module (600).

9. The high-purity silicon material crushing system according to any one of claims 1-8, characterized in that, The purification module (600) includes a primary filtration unit, a secondary dehydration unit, and a tertiary distillation unit connected in sequence; The primary filtration unit is used to intercept silicon powder particles in argon gas, the secondary dehydration unit is used to condense and remove water vapor from argon gas, and the tertiary distillation unit is used to remove trace impurity gases from argon gas.

10. The high-purity silicon material crushing system according to any one of claims 1-8, characterized in that, The regeneration cycle module (700) includes a compressor unit and a liquefaction unit; The compressor unit is used to pressurize the purified argon gas, and the liquefaction unit is used to cool and liquefy the pressurized argon gas into liquid argon. The liquid argon outlet is connected to the liquid argon supply pipeline (430) of the thermal cracking module (400) through a pipeline to form a closed-loop circulation circuit.

Images