Preparation method and application of molybdenum disulfide embedded carbon nanotube heterojunction material

Abstract

The application discloses a preparation method and application of a molybdenum disulfide-embedded carbon nanotube heterojunction material, and the preparation method comprises the following steps: dispersing carbon nanotube powder with an open defect in an acidic solution containing a molybdenum source, stirring, washing, suction filtering and drying to obtain a molybdenum disulfide-embedded carbon nanotube precursor material; and performing gas phase sulfidation treatment on the molybdenum disulfide-embedded carbon nanotube precursor material to obtain the molybdenum disulfide-embedded carbon nanotube heterojunction material. The application avoids the problems of impurities and cracks caused by a traditional molybdenum disulfide layer transfer process, and realizes macroscopically controllable preparation of the molybdenum disulfide-embedded carbon nanotube heterojunction material.

Description

Technical Field

[0001] This invention belongs to the field of materials preparation technology, specifically relating to a method for preparing and applying a molybdenum disulfide embedded carbon nanotube heterojunction material. Background Technology

[0002] The rapid development of artificial intelligence has made information processing efficiency increasingly critical. Traditional computing architectures based on the von Neumann architecture often face problems such as high energy consumption, high latency, and poor parallelism when handling complex tasks. In contrast, biological neural systems exhibit superior information processing efficiency and low energy consumption, especially the human visual system. Therefore, neuromorphic devices that simulate the sensory-memory-computing capabilities of biological neural systems have become a key research direction. To simulate the adaptability of biological visual systems to complex dynamic environments, various techniques have been explored, such as multilayer stacking of two-dimensional materials, electrostatic doping, and defect trapping. However, the complex manufacturing processes associated with multilayer stacked structures still need to be overcome.

[0003] Single-walled carbon nanotubes (SWCNTs) are considered key electronic materials for the post-Moore's Law era due to their ultra-high carrier mobility, good chemical stability, and compatibility with silicon-based complementary metal-oxide-semiconductor (CMOS) processes. However, their strong radial confinement effect in their one-dimensional structure results in high exciton binding energy and low photoresponsivity. Furthermore, chirality limits the photoresponse coverage band, and defect states and interface trapping effects often restrict response recovery speed. In neuromorphic devices, however, memory windows are typically constructed using defects or interface states, and their size and retention time are closely related to film morphology and defect density, often requiring a trade-off between memory performance and response speed. Therefore, these intrinsic limitations of carbon nanotubes restrict their direct application in optoelectronic integration and neuromorphic computing chips.

[0004] In existing technologies, one-dimensional heterostructures are constructed by embedding inorganic perovskites within the cavities of single-walled carbon nanotubes, resulting in negative photoresponses on various substrates. However, such structures have a narrow photodetection range, and their device performance is highly dependent on the substrate material, lacking versatility and stability.

[0005] Monolayer molybdenum disulfide (MoS2) exhibits significant advantages in photoelectric detection and logic devices due to its unique direct bandgap (approximately 1.8 eV), high carrier mobility, and strong photo-matter interaction. By constructing a heterojunction between MoS2 and carbon nanotubes, charge transfer and quantum tunneling effects at the interface can be effectively modulated to control carrier dynamics. By controlling the band structure, spatial separation of photogenerated electron-hole pairs can be promoted, extending carrier lifetime. This endows the heterojunction with potential for broadband photoelectric detection.

[0006] However, in the existing technology, when preparing molybdenum disulfide-carbon nanotube heterojunctions, the transfer process of the molybdenum disulfide layer is prone to introducing cracks, wrinkles or impurities, making it impossible to prepare high-quality molybdenum disulfide-carbon nanotube heterojunction materials.

[0007] Therefore, in order to address the above-mentioned technical problems, it is necessary to provide a method for preparing and applying a molybdenum disulfide-embedded carbon nanotube heterojunction material. Summary of the Invention

[0008] The purpose of this invention is to provide a method for preparing and applying a molybdenum disulfide-embedded carbon nanotube heterojunction material, which enables the large-scale controllable preparation of the molybdenum disulfide-embedded carbon nanotube heterojunction material.

[0009] To achieve the above objectives, an embodiment of the present invention provides the following technical solution:

[0010] A method for preparing a molybdenum disulfide-embedded carbon nanotube heterojunction material includes the following steps: dispersing carbon nanotube powder with open defects in an acidic solution containing a molybdenum source, and stirring, washing, filtering, and drying to obtain a molybdenum disulfide-embedded carbon nanotube precursor material; subjecting the molybdenum disulfide-embedded carbon nanotube precursor material to gas-phase sulfidation treatment to obtain the molybdenum disulfide-embedded carbon nanotube heterojunction material.

[0011] In one embodiment, the steps of dispersing carbon nanotube powder with open defects in an acidic solution containing a molybdenum source, and then stirring, washing, filtering, and drying to obtain a molybdenum disulfide carbon nanotube embedded precursor material are as follows:

[0012] Carbon nanotube powder with open defects is dispersed in an acidic solution of molybdenum source with a concentration of 0.02 mol / L to 0.05 mol / L. After stirring for 2 to 6 days, the precursor material obtained by vacuum filtration is washed 3 to 4 times. The precursor material obtained by vacuum filtration after washing is freeze-dried for 12 to 48 hours to obtain molybdenum disulfide carbon nanotube embedded precursor material.

[0013] In one embodiment, the step of gas-phase sulfidation treatment of the molybdenum disulfide carbon nanotube-embedded precursor material is as follows: the molybdenum disulfide carbon nanotube-embedded precursor material and a sulfur source are placed in a tube furnace, and the temperature of the tube furnace is raised to 400°C to 500°C at a rate of 20°C / min to 50°C / min in a mixed atmosphere of hydrogen and argon, and held at that temperature for 0.5h to 1h to obtain the molybdenum disulfide carbon nanotube-embedded heterojunction material.

[0014] In one embodiment, the carbon nanotube powder is single-walled carbon nanotube powder; and / or, the acidic solution containing the molybdenum source is either an aqueous solution of phosphomolybdic acid or an aqueous solution of sodium molybdate; and / or, the sulfur source is sulfur powder or a mixture of hydrogen sulfide and hydrogen gas.

[0015] In one embodiment, after the step of performing gas-phase sulfidation treatment on the molybdenum disulfide embedded carbon nanotube precursor material, the method further includes: performing desulfidation treatment on the molybdenum disulfide embedded carbon nanotube heterojunction material.

[0016] In one embodiment, the step of desulfurizing the molybdenum disulfide-embedded carbon nanotube heterojunction material includes: placing the molybdenum disulfide-embedded carbon nanotube heterojunction material in a tube furnace, raising the temperature of the tube furnace to 150°C to 300°C in an argon atmosphere at a heating rate of 10°C / min to 20°C / min, and holding at that temperature for 0.5h to 1.5h; washing the molybdenum disulfide-embedded carbon nanotube heterojunction material with a desulfurization solvent, and then filtering and drying it.

[0017] In one embodiment, after the step of performing gas-phase sulfidation treatment on the molybdenum disulfide carbon nanotube-embedded precursor material to obtain a molybdenum disulfide carbon nanotube-embedded heterojunction material, the method further includes: mixing the molybdenum disulfide carbon nanotube-embedded heterojunction material with a conjugated polymer and dissolving it in an organic solution, and obtaining a supernatant containing the molybdenum disulfide semiconductor-type carbon nanotube heterojunction material after centrifugation; filtering and drying the supernatant containing the molybdenum disulfide semiconductor-type carbon nanotube heterojunction material to obtain the molybdenum disulfide semiconductor-type carbon nanotube heterojunction material.

[0018] In one embodiment, before dispersing the carbon nanotube powder with opening defects in an acidic solution containing a molybdenum source, the method further includes: mixing the carbon nanotube powder with opening defects and a conjugated polymer in an organic solution, centrifuging to obtain a supernatant containing semiconductor carbon nanotube material; filtering and drying the supernatant containing semiconductor carbon nanotube material to obtain semiconductor carbon nanotube powder with opening defects.

[0019] Another embodiment of the present invention provides the following technical solution:

[0020] A method for preparing a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction film includes the following steps: providing a growth substrate and a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction material, wherein the molybdenum disulfide embedded semiconductor carbon nanotube heterojunction material is a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction material prepared according to the above-described preparation method; and depositing the molybdenum disulfide embedded semiconductor carbon nanotube heterojunction film on the growth substrate using a dip-coating method or a dip-coating method.

[0021] Another embodiment of the present invention provides the following technical solution:

[0022] A thin-film transistor, the thin-film transistor comprising a substrate and a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction thin film located on the substrate, wherein the molybdenum disulfide embedded semiconductor carbon nanotube heterojunction thin film is a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction thin film prepared according to the above-described preparation method.

[0023] In one embodiment, the optical response range of the thin-film transistor is 405nm~675nm.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] This invention enables the large-scale controllable preparation of molybdenum disulfide-embedded carbon nanotube heterojunction materials, avoiding the problems of impurities and cracks introduced by the traditional molybdenum disulfide layer transfer process.

[0026] The molybdenum disulfide embedded semiconductor carbon nanotube heterojunction thin film prepared by this invention has high interface quality and good uniformity, and is suitable for the fabrication of wafer-level semiconductor devices.

[0027] The thin-film transistors prepared by this invention have a wider optical response range and possess non-volatility, which is not present in carbon nanotubes themselves, and have broad application prospects in the field of photosynaptic devices. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a schematic flowchart of the preparation method of the molybdenum disulfide embedded carbon nanotube heterojunction material in Example 1 of the present invention;

[0030] Figures 2a-2b This is a process flow diagram of the preparation method of molybdenum disulfide embedded carbon nanotube heterojunction material in Example 1 of the present invention;

[0031] Figure 3 This is a scanning transmission electron microscope (STEM) characterization image of the preparation method of the molybdenum disulfide embedded carbon nanotube heterojunction material in Example 1 of the present invention.

[0032] Figure 4 This is a schematic diagram of the extraction and separation of molybdenum disulfide embedded carbon nanotube heterojunction material to obtain molybdenum disulfide embedded semiconductor carbon nanotube heterojunction material in Embodiment 1 of the present invention;

[0033] Figure 5This is a schematic diagram of the thin-film transistor structure in Embodiment 1 of the present invention;

[0034] Figure 6 This is a graph showing the photoelectric response of the thin-film transistor in Embodiment 1 of the present invention measured under 405nm illumination and 10V gate voltage.

[0035] Figure 7 This is a graph showing the photoelectric response of the thin-film transistor in Embodiment 1 of the present invention measured under 520nm illumination and 10V gate voltage.

[0036] Figure 8 This is a photoelectric response curve of the thin-film transistor in Embodiment 1 of the present invention, measured under 675nm illumination and 10V gate voltage. Detailed Implementation

[0037] To enable those skilled in the art to better understand the technical solutions in this disclosure, the technical solutions in the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this disclosure.

[0038] This invention discloses a method for preparing a molybdenum disulfide-embedded carbon nanotube heterojunction material, comprising the following steps: dispersing carbon nanotube powder with open defects in an acidic solution containing a molybdenum source, and stirring, washing, filtering, and drying to obtain a molybdenum disulfide-embedded carbon nanotube precursor material; subjecting the molybdenum disulfide-embedded carbon nanotube precursor material to gas-phase sulfidation treatment to obtain the molybdenum disulfide-embedded carbon nanotube heterojunction material.

[0039] The present invention also discloses a method for preparing a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction film, comprising the following steps: providing a growth substrate and a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction material, wherein the molybdenum disulfide embedded semiconductor carbon nanotube heterojunction material is a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction material prepared according to the above preparation method; and depositing the molybdenum disulfide embedded semiconductor carbon nanotube heterojunction film on the growth substrate by dip coating or dip-coating.

[0040] The present invention also discloses a thin film transistor, including a substrate and a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction thin film located on the substrate, wherein the molybdenum disulfide embedded semiconductor carbon nanotube heterojunction thin film is a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction thin film prepared according to the above-described preparation method.

[0041] The present invention will be further illustrated below with specific examples.

[0042] Example 1:

[0043] Refer to Figure 1 As shown, the preparation method of the molybdenum disulfide embedded carbon nanotube heterojunction material in this example comprises the following steps:

[0044] S1, combining Figure 2a As shown, dispersing carbon nanotube powder with open defects into an acidic solution containing a molybdenum source, followed by stirring, washing, suction filtration and drying to obtain a molybdenum disulfide embedded carbon nanotube precursor material.

[0045] Wherein, the carbon nanotube powder is single-walled carbon nanotube powder. Placing the single-walled carbon nanotube powder in a tube furnace, holding the temperature at 350°C to 550°C for 30min to 60min in an air atmosphere, and obtaining single-walled carbon nanotube powder with open defects after washing with ethanol and drying.

[0046] In addition, the acidic solution containing a molybdenum source includes, but is not limited to, any one of phosphomolybdic acid aqueous solution or sodium molybdate aqueous solution, preferably phosphomolybdic acid ({PMo 12}) aqueous solution.

[0047] In this step, the carbon nanotube powder with open defects is first dispersed in an acidic solution of a molybdenum source with a concentration of 0.02mol / L to 0.05mol / L, then stirred for 2 to 6 days, after washing the precursor material obtained by suction filtration for 3 to 4 times, the precursor material is obtained by suction filtration again, and finally freeze-dried for 12h to 48h to obtain the molybdenum disulfide embedded carbon nanotube precursor material.

[0048] Specifically, in this step, 1g of single-walled carbon nanotube powder is first weighed and placed in a quartz boat, heated to 350°C in an air atmosphere using a tube furnace, and held for 1h, then taken out, washed with ethanol and dried to obtain single-walled carbon nanotube powder with open defects; then 200mg of carbon nanotube powder with open defects is weighed and dispersed in 60mL of phosphomolybdic acid aqueous solution with a concentration of 0.037mol / L, the mixed solution is stirred for 4 days at a rotation speed of 600rpm by magnetic stirring to obtain a solution containing the molybdenum disulfide embedded carbon nanotube precursor material; then the molybdenum disulfide embedded carbon nanotube precursor material is obtained by suction filtration first, after washing the molybdenum disulfide embedded carbon nanotube precursor material 3 to 4 times with deionized water until the solution is colorless, suction filtration is performed again and freeze-drying is performed for 2 days in a drying oven at -50°C to obtain the molybdenum disulfide embedded carbon nanotube precursor material ({PMo 12}@SWCNT).

[0049] More specifically, the single-walled carbon nanotube powder in this embodiment is prepared by arc growth. Of course, in other embodiments, single-walled carbon nanotube powder prepared by chemical vapor deposition can also be used.

[0050] It is worth noting that, in addition to the opening method in this embodiment, other methods that can form opening defects on single-walled carbon nanotubes can also be used in other embodiments, or commercial or customized single-walled carbon nanotube powder with opening defects can be used directly.

[0051] S2, Combination Figure 2b As shown, a molybdenum disulfide carbon nanotube-embedded precursor material was subjected to gas-phase sulfidation treatment to obtain a molybdenum disulfide carbon nanotube-embedded heterojunction material.

[0052] Specifically, in this embodiment, a molybdenum disulfide-embedded carbon nanotube precursor material and a sulfur source are placed in a tube furnace. The temperature of the tube furnace is raised to 400°C–500°C at a rate of 20°C / min–50°C / min in a mixed atmosphere of hydrogen and argon, and held at this temperature for 0.5–1 hour to obtain a molybdenum disulfide-embedded carbon nanotube heterojunction material. The sulfur source is sulfur powder or a mixture of hydrogen sulfide and hydrogen.

[0053] Preferably, the sulfur source is sulfur powder. In this embodiment, the hydrogen flow rate is 20 sccm and the argon flow rate is 80 sccm in the mixed atmosphere of hydrogen and argon. Simultaneously, during the gas-phase sulfidation process, in this embodiment, the temperature of the tubular furnace is preferably raised to 450°C at a heating rate of 40°C / min and held at that temperature for 40 min.

[0054] In addition, this embodiment further includes a desulfurization treatment of the obtained molybdenum disulfide embedded carbon nanotube heterojunction material after this step.

[0055] Specifically, the molybdenum disulfide-embedded carbon nanotube heterojunction material was first placed in a tube furnace, and the temperature of the tube furnace was raised to 150℃~300℃ in an argon atmosphere at a heating rate of 10℃ / min~20℃ / min, and held at that temperature for 0.5h~1.5h. Then, the molybdenum disulfide-embedded carbon nanotube heterojunction material was washed with a desulfurization solvent, filtered, and dried.

[0056] More specifically, in this embodiment, the argon flow rate is 80 sccm. Simultaneously, in this embodiment, the temperature of the tube furnace is raised to 200°C at a heating rate of 15°C / min and held at that temperature for 1 hour. The furnace is then removed and washed 3-4 times with CS2 solution, filtered, and freeze-dried in a -50°C drying oven for 1 day, ultimately yielding a purer molybdenum disulfide-embedded carbon nanotube heterojunction material.

[0057] It should be understood that, in addition to CS₂ solution, in other multiple embodiments, other solutions capable of dissolving sulfur can also be selected to clean the molybdenum disulfide embedded carbon nanotube heterojunction materials heat-treated in a tube furnace.

[0058] Reference Figure 3 As shown, in this embodiment, molybdenum disulfide is effectively filled into carbon nanotubes by means of embedding to obtain molybdenum disulfide embedded carbon nanotube heterojunction material with a high filling rate.

[0059] In this embodiment, carbon nanotubes are used as templates to construct molybdenum disulfide-carbon nanotube one-dimensional heterojunctions. Through a two-step process of liquid-phase filling and gas-phase sulfurization, macro-scale controllable preparation of molybdenum disulfide embedded carbon nanotube heterojunction materials is realized, which avoids the problems of introducing impurities, cracks and other defects in the traditional molybdenum disulfide layer transfer process. Meanwhile, charge transfer and energy band regulation between the host and guest are realized through van der Waals interaction, and the electronic structure and optical response are effectively regulated without damaging the structure of carbon nanotubes, which solves the problem of multi-layer stacking. In addition, the confinement effect of carbon nanotubes can effectively isolate the influence of water and oxygen, and improve the stability of the device when applied to practical devices.

[0060] Further, reference Figure 4 As shown, the obtained molybdenum disulfide embedded carbon nanotube heterojunction material comprises molybdenum disulfide embedded metallic carbon nanotube heterojunction material (MoS₂@m-SWCNT) and molybdenum disulfide embedded semiconducting carbon nanotube heterojunction material (MoS₂@s-SWCNT). Therefore, after desulfurization treatment, the method further comprises separating the molybdenum disulfide embedded metallic carbon nanotube heterojunction material and the molybdenum disulfide embedded semiconducting carbon nanotube heterojunction material.

[0061] Specifically, the main purpose of this embodiment is to apply the molybdenum disulfide embedded semiconducting carbon nanotube material to a thin film transistor, so as to obtain a thin film transistor with a wider photoresponse range, which is further applied to the field of optical synaptic devices. Since molybdenum disulfide is filled inside carbon nanotubes by embedding, it does not affect the separation and extraction of carbon nanotubes. In this step, specifically, the molybdenum disulfide embedded carbon nanotube heterojunction material and conjugated polymer are mixed and dissolved in an organic solution, after centrifugal separation, the supernatant containing molybdenum disulfide embedded semiconducting carbon nanotube heterojunction material is obtained, and then the supernatant containing molybdenum disulfide embedded semiconducting carbon nanotube heterojunction material is subjected to suction filtration and drying to obtain the molybdenum disulfide embedded semiconducting carbon nanotube heterojunction material.

[0062] Wherein, the conjugated polymer includes, but is not limited to, any one of polyfluorene-based polymers, polycarbazole-based polymers and polythiophene-based polymers.

[0063] More specifically, 10 mg of the obtained molybdenum disulfide-encapsulated carbon nanotube heterojunction material and 10 mg of polycarbazole (PCz) are dispersed in 20 mL of toluene solution, subjected to ultrasonication for 80 minutes and then centrifugation, wherein the centrifugal force is set to 15000 g and the centrifugation time is set to 30 minutes; the supernatant is collected, subjected to suction filtration and dried, to obtain the molybdenum disulfide-encapsulated semiconductor-type carbon nanotube heterojunction material.

[0064] Further, the preparation method of the molybdenum disulfide-encapsulated semiconductor-type carbon nanotube heterojunction thin film in this embodiment comprises the following steps: providing a growth substrate and a molybdenum disulfide-encapsulated semiconductor-type carbon nanotube heterojunction material; depositing the molybdenum disulfide-encapsulated semiconductor-type carbon nanotube heterojunction thin film on the growth substrate by dip coating or pulling method.

[0065] In addition, it is worth noting that in the process of thin film deposition, the deposition rate of the molybdenum disulfide-encapsulated semiconductor-type carbon nanotube heterojunction thin film can be accelerated or slowed down by controlling the deposition temperature, that is, performing heating or cooling treatment.

[0066] Specifically, after completing the deposition of the molybdenum disulfide-encapsulated semiconductor-type carbon nanotube heterojunction thin film, the method further comprises cleaning the structure deposited with the molybdenum disulfide-encapsulated semiconductor-type carbon nanotube heterojunction thin film with an organic solvent and blow-drying it.

[0067] Wherein, the organic solvent includes, but is not limited to, any one of hot toluene, xylene, chloroform or tetrahydrofuran.

[0068] The molybdenum disulfide-encapsulated semiconductor-type carbon nanotube heterojunction thin film prepared in this embodiment has high interface quality and good uniformity, and is suitable for wafer-level preparation.

[0069] See Figure 5 as shown, the thin film transistor in this embodiment comprises a substrate and the molybdenum disulfide-encapsulated semiconductor-type carbon nanotube heterojunction thin film located on the substrate.

[0070] Specifically, the preparation method of the thin film transistor in this embodiment comprises the following steps:

[0071] 1. Providing a substrate.

[0072] The substrate in this embodiment comprises a silicon substrate and a silicon oxide layer located on the silicon substrate, and the thickness of the silicon oxide layer is 300 nm. Of course, in other embodiments, other conventional substrates that can be used for preparing thin film transistors can also be selected as the substrate.

[0073] 2. Depositing the molybdenum disulfide-encapsulated semiconductor-type carbon nanotube heterojunction thin film on the substrate by dip coating or pulling method.

[0074] Specifically, in this embodiment, a dip-coating method is used to prepare a molybdenum disulfide embedded semiconducting carbon nanotube heterojunction thin film. First, the supernatant containing the molybdenum disulfide embedded semiconducting carbon nanotube heterojunction material obtained by centrifugal separation and extraction is directly diluted 3 times; then the cleaned substrate is immersed in the diluted solution for thin film deposition, and taken out after 1 day of deposition; thereafter, it is cleaned by immersion in hot toluene, the cleaning temperature is set to 75°C, and the time is set to 10 minutes; after cleaning is completed, it is blown dry.

[0075] It is worth noting that, in a plurality of other embodiments, the molybdenum disulfide embedded semiconducting carbon nanotube heterojunction material powder obtained after suction filtration and drying can also be reconstituted into a solution with a suitable concentration, and then the dip-coating method is used for thin film deposition.

[0076] 3. Preparation of source electrode and drain electrode.

[0077] Both the source electrode and the drain electrode in this embodiment are TiAu composite electrodes.

[0078] Specifically, firstly, a patterned photoresist layer is formed on the molybdenum disulfide embedded semiconducting carbon nanotube heterojunction thin film through a standard photolithography process to define the positions of the source electrode and the drain electrode; then a 3 nm titanium (Ti) metal layer and a 40 nm gold (Au) metal layer are sequentially deposited on the substrate and the photoresist layer through an electron beam evaporation process, forming the source electrode and the drain electrode electrically connected to the molybdenum disulfide embedded semiconducting carbon nanotube heterojunction thin film in the channel region. After removing the photoresist layer and the metal layer thereon, photoresist is spin-coated again, and a new patterned photoresist layer is formed by using an ultraviolet photolithography process to protect the molybdenum disulfide embedded semiconducting carbon nanotube heterojunction thin film in the channel region, and an etching process is used to remove the molybdenum disulfide embedded semiconducting carbon nanotube heterojunction thin film in other regions. After etching is completed, the photoresist is removed, and a thin film transistor based on the molybdenum disulfide embedded semiconducting carbon nanotube heterojunction is obtained.

[0079] It is worth noting that, besides the thin film transistor with a simple structure in this embodiment, in a plurality of other embodiments, thin film transistors with other structures based on the molybdenum disulfide embedded semiconducting carbon nanotube heterojunction can also be prepared, including but not limited to bottom-gate top-contact devices, bottom-gate bottom-contact devices, top-gate bottom-contact devices, top-gate top-contact devices, etc.

[0080] Refer Figure 6 , under the illumination of 405 nm and a gate voltage of 10 V, the current in the thin film transistor of this embodiment increases significantly, showing a positive photoresponse, and when the illumination condition is removed, the current magnitude remains unchanged, which has non-volatility.

[0081] Refer Figure 7 and Figure 8As shown, under illumination conditions of 520nm and 675nm, the thin-film transistor in this embodiment also exhibited a positive photoresponse and both showed non-volatility.

[0082] Compared with existing technologies, the thin-film transistor in this embodiment has a wider light response range and non-volatility that single-walled carbon nanotubes do not possess, thus having broad application prospects in the field of photosynaptic devices.

[0083] Example 2:

[0084] The preparation method and application of the molybdenum disulfide embedded carbon nanotube heterojunction material in this embodiment are largely the same as those in Example 1. The difference is that in this embodiment, semiconductor carbon nanotube powder with open defects is first obtained by separation and extraction, and then mixed with an aqueous solution of phosphomolybdic acid. The mixture is then stirred, washed, filtered and dried in sequence, and then obtained by gas phase sulfidation treatment.

[0085] Specifically, carbon nanotube powder with open defects is first mixed with a conjugated polymer and dissolved in an organic solution. After centrifugation, a supernatant containing semiconductor carbon nanotube material is obtained. Then, the supernatant containing semiconductor carbon nanotube material is filtered and dried to obtain semiconductor carbon nanotube powder with open defects.

[0086] As can be seen from the above technical solution, the present invention has the following beneficial effects:

[0087] This invention enables the large-scale controllable preparation of molybdenum disulfide-embedded carbon nanotube heterojunction materials, avoiding the problems of impurities and cracks introduced by the traditional molybdenum disulfide layer transfer process.

[0088] The molybdenum disulfide embedded semiconductor carbon nanotube heterojunction thin film prepared by this invention has high interface quality and good uniformity, and is suitable for the fabrication of wafer-level semiconductor devices.

[0089] The thin-film transistors prepared by this invention have a wider optical response range and possess non-volatility, which is not present in carbon nanotubes themselves, and have broad application prospects in the field of photosynaptic devices.

[0090] It will be apparent to those skilled in the art that this disclosure is not limited to the details of the exemplary embodiments described above, and that this disclosure can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of this disclosure is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within this disclosure. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0091] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A method for preparing a molybdenum disulfide-embedded carbon nanotube heterojunction material, characterized in that, The preparation method includes the following steps: Carbon nanotube powder with open defects was dispersed in an acidic solution containing a molybdenum source, and then stirred, washed, filtered, and dried to obtain a molybdenum disulfide carbon nanotube embedded precursor material. Molybdenum disulfide precursor material with embedded carbon nanotubes was subjected to gas-phase sulfidation treatment to obtain a heterojunction material with embedded carbon nanotubes.

2. The method for preparing the molybdenum disulfide-embedded carbon nanotube heterojunction material according to claim 1, characterized in that, The steps for dispersing carbon nanotube powder with open defects in an acidic solution containing a molybdenum source, followed by stirring, washing, filtration, and drying to obtain a molybdenum disulfide carbon nanotube-embedded precursor material are as follows: Carbon nanotube powder with open defects is dispersed in an acidic solution of molybdenum source with a concentration of 0.02 mol / L to 0.05 mol / L. After stirring for 2 to 6 days, the precursor material obtained by vacuum filtration is washed 3 to 4 times. The precursor material obtained by vacuum filtration after washing is freeze-dried for 12 to 48 hours to obtain molybdenum disulfide carbon nanotube embedded precursor material.

3. The method for preparing the molybdenum disulfide-embedded carbon nanotube heterojunction material according to claim 1, characterized in that, The steps for vapor-phase sulfidation treatment of molybdenum disulfide carbon nanotube-embedded precursor materials are as follows: The molybdenum disulfide carbon nanotube-embedded precursor material and sulfur source were placed in a tube furnace. In a mixed atmosphere of hydrogen and argon, the temperature of the tube furnace was raised to 400℃~500℃ at a rate of 20℃ / min~50℃ / min and held for 0.5h~1h to obtain a molybdenum disulfide carbon nanotube-embedded heterojunction material.

4. The method for preparing the molybdenum disulfide-embedded carbon nanotube heterojunction material according to claim 2, characterized in that, The carbon nanotube powder is single-walled carbon nanotube powder; and / or... The acidic solution containing the molybdenum source is either an aqueous solution of phosphomolybdic acid or an aqueous solution of sodium molybdate; and / or, The sulfur source is sulfur powder or a mixture of hydrogen sulfide and hydrogen gas.

5. The method for preparing the molybdenum disulfide-embedded carbon nanotube heterojunction material according to claim 1, characterized in that, Following the step of vapor-phase sulfidation treatment of the molybdenum disulfide carbon nanotube-embedded precursor material, the process also includes: Desulfurization treatment was performed on molybdenum disulfide-embedded carbon nanotube heterojunction materials.

6. The method for preparing the molybdenum disulfide-embedded carbon nanotube heterojunction material according to claim 5, characterized in that, The steps for desulfurization treatment of molybdenum disulfide embedded carbon nanotube heterojunction materials include: The molybdenum disulfide-embedded carbon nanotube heterojunction material was placed in a tube furnace, and the temperature of the tube furnace was raised to 150℃~300℃ in an argon atmosphere at a heating rate of 10℃ / min~20℃ / min, and held at that temperature for 0.5h~1.5h. The molybdenum disulfide-embedded carbon nanotube heterojunction material was washed with a desulfurization solvent, and then filtered and dried.

7. The method for preparing the molybdenum disulfide-embedded carbon nanotube heterojunction material according to claim 1, characterized in that, After the step of performing vapor-phase sulfidation treatment on the molybdenum disulfide carbon nanotube-embedded precursor material to obtain the molybdenum disulfide carbon nanotube-embedded heterojunction material, the following steps are also included: The molybdenum disulfide embedded carbon nanotube heterojunction material was mixed with a conjugated polymer and dissolved in an organic solution. After centrifugation, the supernatant containing the molybdenum disulfide embedded semiconductor carbon nanotube heterojunction material was obtained. The supernatant containing molybdenum disulfide embedded semiconductor carbon nanotube heterojunction material was filtered and dried to obtain the molybdenum disulfide embedded semiconductor carbon nanotube heterojunction material.

8. The method for preparing the molybdenum disulfide-embedded carbon nanotube heterojunction material according to claim 1, characterized in that, The process includes the following steps prior to dispersing the carbon nanotube powder with open defects in an acidic solution containing a molybdenum source: Carbon nanotube powder with open defects is mixed with a conjugated polymer and dissolved in an organic solution. After centrifugation, a supernatant containing semiconductor carbon nanotube material is obtained. The supernatant containing semiconductor carbon nanotube material was filtered and dried to obtain semiconductor carbon nanotube powder with open defects.

9. A method for preparing a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction thin film, characterized in that, The preparation method includes the following steps: A growth substrate and a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction material are provided, wherein the molybdenum disulfide embedded semiconductor carbon nanotube heterojunction material is prepared by the preparation method according to any one of claims 7 or 8. Molybdenum disulfide embedded semiconductor carbon nanotube heterojunction films were deposited on growth substrates using dip-coating or dip-coating methods.

10. A thin-film transistor, characterized in that, The thin-film transistor includes a substrate and a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction film located on the substrate. The molybdenum disulfide embedded semiconductor carbon nanotube heterojunction film is a molybdenum disulfide embedded semiconductor carbon nanotube heterojunction film prepared according to the preparation method described in claim 9.

11. The thin-film transistor according to claim 10, characterized in that, The optical response range of the thin-film transistor is 405nm~675nm.

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