Quantum dot polymer film for chip-level point light source and method of preparing the same
Patent Information
- Application Number
- CN202610962240.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-06-30
- Publication Date
- 2026-10-09
AI Technical Summary
然而，现有技术仍存在以下不足：一方面，常规的无机包覆层与量子点之间结合力较弱，难以形成致密、均匀的保护层，包覆后量子点的光致发光效率易受影响；另一方面，量子点与聚合物基质的界面相容性差，容易发生团聚或相分离，导致膜层光学均匀性下降；此外，现有聚合物基体材料的折射率较低、阻水隔氧性能有限，难以满足芯片级点光源对高光效和高可靠性的双重需求
（1）本发明制备硼掺杂的硅-铝复合溶胶，对钙钛矿量子点包覆，该包覆层大大提高了钙钛矿量子点本身固有的对热、湿气、氧气敏感性的耐受能力，使其能更好地承受后续LED芯片封装和工作中产生的高温，确保色彩转换效率和寿命，同时，包覆层有效隔绝环境中的水汽和氧气，防止量子点在储存和应用过程中发生降解、离子迁移或光解，极大提高了预制体材料的长效稳定性和可靠性。硼掺杂的硅-铝复合溶胶中硅烷前驱体选用分别带有双键或氨基的硅烷化合物，氨基提供对量子点的吸附点，双键提供与聚合物的连接点，使得包覆后的量子点与膜聚合物基质之间形成了共价键结合，提高界面相容性，此外，复合溶胶中硼酸酯的掺杂，它能有效地与钙钛矿量子点发生强相互作用，大大减少了非辐射复合中心，从而提高量子点本身的光致发光量子产率。
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Abstract
Description
Technical Field
[0001] This invention relates to the field of quantum dot film technology, specifically to a quantum dot polymer film for chip-scale point light sources and its preparation method. Background Technology
[0002] Perovskite quantum dots have attracted widespread attention in the display and lighting fields in recent years due to their excellent optical properties, such as tunable emission wavelength, narrow full width at half maximum (FWHM), and high color purity. Applying perovskite quantum dots to chip-level point light sources can achieve high color gamut and high-efficiency color conversion, meeting the stringent requirements of next-generation display technologies for color saturation and energy efficiency.
[0003] However, perovskite quantum dots inherently possess a high sensitivity to heat, moisture, and oxygen. In practical applications, especially during LED chip packaging and operation, chip operating temperatures can rise to tens or even hundreds of degrees Celsius. Simultaneously, the presence of moisture and oxygen in the environment accelerates the degradation, ion migration, and photo-oxidation reactions of quantum dots, leading to a significant decrease in their fluorescence quantum yield and deterioration in luminous stability, severely impacting the lifespan and color reliability of point light source devices. Therefore, improving the environmental stability of perovskite quantum dots has become a key technological bottleneck for realizing their chip-level applications.
[0004] Currently, methods to improve the stability of perovskite quantum dots mainly include surface ligand modification, inorganic shell coating, and dispersing quantum dots in a polymer matrix. However, existing technologies still have the following shortcomings: On the one hand, the bonding force between conventional inorganic coating layers and quantum dots is weak, making it difficult to form a dense and uniform protective layer, which easily affects the photoluminescence efficiency of quantum dots after coating; on the other hand, the interfacial compatibility between quantum dots and polymer matrices is poor, easily leading to aggregation or phase separation, resulting in a decrease in the optical uniformity of the film; in addition, existing polymer matrix materials have low refractive index and limited water and oxygen barrier properties, making it difficult to meet the dual requirements of high luminous efficiency and high reliability for chip-scale point light sources.
[0005] To address the aforementioned issues, this invention provides a quantum dot polymer film for chip-scale point light sources and its preparation method, aiming to synergistically improve the stability, optical performance, and compatibility with the packaging system of perovskite quantum dots through quantum dot surface coating and polymer matrix composition. Summary of the Invention
[0006] The purpose of this invention is to provide a quantum dot polymer film for chip-level point light sources and its preparation method, so as to solve the problems existing in the prior art.
[0007] To address the aforementioned technical problems, this invention provides a quantum dot polymer film for chip-level point light sources, comprising, by mass parts: 5-25 parts modified acrylic resin, 0.1-5 parts modified quantum dots, 0.05-1.0 parts boron nitride nanosheets, 0.005 parts initiator, and 0.01-0.1 parts silane coupling agent. The modified quantum dots are perovskite quantum dots with a boron-doped silicon-aluminum composite coating layer. This layer is formed by in-situ hydrolysis and condensation of inorganic aluminum salt and a composite silicon source on the surface of the perovskite quantum dots. The specific preparation method is as follows: Inorganic aluminum salt, solvent, and perovskite quantum dots are mixed and reacted for 20-40 minutes. A composite silicon source is then added, and the temperature is maintained at 30-35°C. The reaction continues for 30-60 minutes to obtain the modified quantum dots. The inorganic aluminum salt is one of aluminum nitrate, aluminum dihydrogen phosphate, or aluminum chloride; The composite silicon source is composed of γ-aminopropyltriethoxysilane, γ-(methacryloyloxy)propyltrimethoxysilane, and triethyl borate, with a molar ratio of (0.05-0.15):(0.01-0.1):(0.01-0.05).
[0008] Furthermore, the silane coupling agent is preferably γ-aminopropyltriethoxysilane.
[0009] Furthermore, the solvent includes water and alcohol solvents, wherein the alcohol solvents include at least one of anhydrous ethanol, isopropanol, ethylene glycol, n-propanol, diethylene glycol, and 2-methoxyethanol; preferably, the molar ratio of inorganic aluminum salt, water, and alcohol solvent is 1:(0-3):(10-25).
[0010] Furthermore, the alcohol solvent is preferably anhydrous ethanol.
[0011] Furthermore, the perovskite quantum dots have structural formulas AMX3, A3M2X9, A2MX6, and Q2A. m-1 M m X 3m+1 At least one of the following; wherein A is NH2CHNH 2+ (FA), CH3NH 3+ (MA), Cs + At least one of them; M is Pb 2+ Cd 2+ Mn 2+ Zn 2+ Sn 2+ 、Ge 2+ Bi 3+At least one of the following; X is at least one of the halide anions; Q is an aromatic group or an alkyl organic amine cation with not less than 3 carbon atoms; m is any value between 1 and 100; the amount of perovskite quantum dots used is 10-20 mg perovskite quantum dots dry weight / mmol inorganic aluminum salt.
[0012] Furthermore, the temperature is preferably maintained at 35°C when the composite silicon source is added.
[0013] Furthermore, the preferred amount of the perovskite quantum dots is 15 mg perovskite quantum dots dry weight / mmol inorganic aluminum salt.
[0014] Furthermore, the modified quantum dots are prepared under a stirring state throughout the entire process.
[0015] Furthermore, the stirring speed is 300-600 rpm.
[0016] Furthermore, the stirring speed is preferably 300 rpm.
[0017] Furthermore, the pure water and the composite silicon source are added at rates of 1-3 mL / min and 5-10 s / drop, respectively.
[0018] Furthermore, the preferred addition rate of the purified water is 2 mL / min, and the preferred addition rate of the composite silicon source is 5 s / drop.
[0019] Furthermore, the preparation of the modified quantum dots also includes aging, displacement, and drying steps.
[0020] Furthermore, the aging time is 24-72 hours, the replacement time is 6-8 hours, the drying temperature is 80-100°C, and the drying time is 10-12 hours.
[0021] Furthermore, the modified acrylic resin is prepared by dissolving styrene, methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, and azobisisobutyronitrile in butyl acetate, followed by reaction, cooling, and drying. The mass percentages of methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, styrene, azobisisobutyronitrile, and butyl acetate are 35.0-45.0%, 7.0-10.0%, 6.0-10.0%, 0.1-0.5%, and 40-51%, respectively, and the sum of the mass percentages of the above components is 100%.
[0022] Furthermore, the reaction temperature is 60-80℃, and the reaction time is 10-24 hours.
[0023] The present invention also provides a method for preparing a quantum dot polymer film for chip-level point light sources, comprising the following steps: heating 5-25 parts of modified acrylic resin to a molten state by mass, adding 0.1-5 parts of modified quantum dots, 0.05-1.0 parts of boron nitride nanosheets, 0.001-0.005 parts of initiator, and 0.01-0.1 parts of γ-aminopropyltriethoxysilane, mixing for 20-30 minutes, and cooling to obtain the final product.
[0024] Compared with the prior art, the beneficial effects achieved by the present invention are: (1) The present invention prepares a boron-doped silicon-aluminum composite sol to coat perovskite quantum dots. This coating layer greatly improves the inherent tolerance of perovskite quantum dots to heat, moisture and oxygen, enabling them to better withstand the high temperatures generated during subsequent LED chip packaging and operation, ensuring color conversion efficiency and lifespan. At the same time, the coating layer effectively isolates water vapor and oxygen in the environment, preventing the quantum dots from degrading, migrating, or photolyzing during storage and application, greatly improving the long-term stability and reliability of the preform material. In the boron-doped silicon-aluminum composite sol, the silane precursor is selected from silane compounds with double bonds or amino groups. The amino group provides adsorption sites for quantum dots, and the double bond provides connection sites with the polymer, so that the coated quantum dots and the membrane polymer matrix form covalent bonds, improving interfacial compatibility. In addition, the doping of borate esters in the composite sol can effectively interact strongly with perovskite quantum dots, greatly reducing non-radiative recombination centers, thereby improving the photoluminescence quantum yield of the quantum dots themselves.
[0025] (2) The quantum dot polymer film of the present invention uses acrylic resin as the base material and styrene and bis(2-methylpropene)ethoxydisulfide as modifiers to introduce sulfur atoms, improve the refractive index of the matrix, and improve the overall luminous efficacy and color brightness of the point light source. In addition, the benzene ring structure of styrene improves the water barrier and oxygen barrier effect and the weather resistance effect.
[0026] (3) The boron-doped silicon-aluminum composite coating layer on the surface of the modified quantum dots of the present invention simultaneously introduces amino, methacryloxy, and boron-oxygen structures. The amino group can improve the bonding force between the coating layer and the surface of the perovskite quantum dots, making the coating layer more stably attached to the surface of the quantum dots; the methacryloxy group can participate in the grafting or cross-linking reaction of the modified acrylic resin under the action of the initiator, so that the modified quantum dots form a chemical connection with the resin matrix through the coating layer, thereby improving the compatibility and dispersion stability of the quantum dots in the resin, reducing problems such as quantum dot aggregation, migration and uneven film shrinkage during film formation, and making the resulting polymer film emits light more uniformly; the boron-oxygen structure can passivate the defects on the surface of the perovskite quantum dots, further improving the luminescence efficiency and stability of the quantum dots. Detailed Implementation
[0027] The technical solutions of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.
[0028] Example 1 (1) Dissolve aluminum chloride in anhydrous ethanol, add purified water at 2 mL / min, stir at 300 rpm for 20 min, add perovskite quantum dots CsPbBr3 at a rate of 15 mg perovskite quantum dots (dry weight) / mmol aluminum chloride, react for 30 min, the molar ratio of aluminum chloride, water and anhydrous ethanol is 1:1:10, add composite silicon source dropwise at 5 s / 1, maintain the system temperature at 35℃, after the addition is complete, continue stirring at 300 rpm for 30 min, age for 24 h, add ethanol for solvent replacement for 6 h, repeat 3 times, dry at 100℃ for 12 h to obtain modified quantum dots; the composite silicon source is composed of γ-aminopropyltriethoxysilane, γ-(methacryloyloxy)propyltrimethoxysilane and triethyl borate in a molar ratio of 0.108:0.072:0.01; the molar ratio of aluminum chloride to γ-aminopropyltriethoxysilane is 1:0.10; (2) Styrene, methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, and azobisisobutyronitrile are dissolved in butyl acetate to obtain mixture a; wherein the mass percentages of methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, styrene, azobisisobutyronitrile and butyl acetate are 35.0%, 7.0%, 10.0%, 0.1% and 47.9%, respectively; the mixture a is stirred at 80 rpm for 10 hours in a water bath at 60°C, cooled, and vacuum dried at 40°C for 12 hours to obtain modified acrylic resin; (3) By mass, heat 5 parts of modified acrylic resin to a molten state, add 0.1 parts of modified quantum dots, 0.05 parts of boron nitride nanosheets, 0.005 parts of di-tert-butyl peroxide, and 0.01 parts of γ-aminopropyltriethoxysilane, stir at 100 rpm for 20 min, and cool the mixture to obtain a quantum dot polymer film for chip-level point light source.
[0029] Example 2 (1) Dissolve aluminum nitrate in anhydrous ethanol, add purified water at 2 mL / min and stir at 300 rpm for 30 min, add perovskite quantum dots CsPbBr3 at a rate of 15 mg perovskite quantum dots (dry weight) / mmol aluminum nitrate, react for 30 min, the molar ratio of aluminum nitrate, water and anhydrous ethanol is 1:3:25, add composite silicon source dropwise at 5 s / 1, maintain the system temperature at 35℃, after the addition is complete, continue stirring at 300 rpm for 60 min, age for 72 h, add ethanol for solvent replacement for 6 h, repeat 3 times, dry at 100℃ for 12 h to obtain modified quantum dots; the composite silicon source is composed of γ-aminopropyltriethoxysilane, γ-(methacryloyloxy)propyltrimethoxysilane and triethyl borate in a molar ratio of 0.108:0.072:0.01; the molar ratio of aluminum nitrate to γ-aminopropyltriethoxysilane is 1:0.14; (2) Styrene, methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, and azobisisobutyronitrile are dissolved in butyl acetate to obtain mixture a; wherein the mass percentages of methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, styrene, azobisisobutyronitrile and butyl acetate are 45.0%, 10.0%, 6.0%, 0.5% and 38.5% respectively, and the sum of the mass percentages of the above components is 100%; the mixture a is stirred at 80 rpm for 24 hours in a water bath at 80°C, cooled, and vacuum dried at 60°C for 24 hours to obtain modified acrylic resin; (3) By mass, 25 parts of modified acrylic resin are heated to a molten state, 5 parts of modified quantum dots, 1.0 part of boron nitride nanosheets, 0.005 parts of di-tert-butyl peroxide, and 0.1 parts of γ-aminopropyltriethoxysilane are added, and the mixture is stirred at 100 rpm for 30 min. The mixture is then cooled to obtain a quantum dot polymer film for chip-level point light sources.
[0030] Example 3 (1) Dissolve aluminum dihydrogen phosphate in anhydrous ethanol, add purified water at 2 mL / min and stir at 300 rpm for 20 min, add perovskite quantum dots CsPbBr3 at a rate of 15 mg perovskite quantum dots (dry weight) / mmol aluminum dihydrogen phosphate, react for 30 min, the molar ratio of aluminum dihydrogen phosphate, water and anhydrous ethanol is 1:2:20, add composite silicon source dropwise at 5 s / 1, maintain the system temperature at 35℃, after the addition is complete, Continue stirring at 300 rpm for 45 minutes, age for 48 hours, add ethanol for solvent replacement for 6 hours, repeat 3 times, and dry at 100℃ for 12 hours to obtain modified quantum dots; the composite silicon source is composed of γ-aminopropyltriethoxysilane, γ-(methacryloyloxy)propyltrimethoxysilane, and triethyl borate in a molar ratio of 0.108:0.072:0.01; the molar ratio of aluminum dihydrogen phosphate to γ-aminopropyltriethoxysilane is 1:0.12; (2) Styrene, methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, and azobisisobutyronitrile are dissolved in butyl acetate to obtain mixture a; wherein the mass percentages of methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, styrene, azobisisobutyronitrile and butyl acetate are 40.0%, 8.5%, 8.0%, 0.3% and 43.2% respectively, and the sum of the mass percentages of the above components is 100%; the mixture a is stirred at 80 rpm for 18 hours in a water bath at 70°C, cooled, and vacuum dried at 50°C for 18 hours to obtain modified acrylic resin; (3) By mass, 15 parts of modified acrylic resin are heated to a molten state, and 2.5 parts of modified quantum dots, 0.5 parts of boron nitride nanosheets, 0.005 parts of di-tert-butyl peroxide, and 0.05 parts of γ-aminopropyltriethoxysilane are added. The mixture is stirred at 100 rpm for 25 min and then cooled to obtain a quantum dot polymer film for chip-level point light sources.
[0031] Example 4 (1) Dissolve aluminum chloride in anhydrous ethanol, add purified water at 2 mL / min and stir at 300 rpm for 10 min. The amount used is 15 mg perovskite quantum dots (dry weight) / mmol aluminum chloride. React for 30 min. The molar ratio of aluminum chloride, water and anhydrous ethanol is 1:1:15. Add composite silicon source dropwise at 5 s / 1, maintain the system temperature at 35℃. After the addition is complete, continue stirring at 300 rpm for 50 min. Age for 36 h, add ethanol for solvent replacement for 6 h, repeat 3 times, and dry at 100℃ for 12 h to obtain modified quantum dots. The composite silicon source is composed of γ-aminopropyltriethoxysilane, γ-(methacryloyloxy)propyltrimethoxysilane and triethyl borate in a molar ratio of 0.108:0.072:0.01. The molar ratio of aluminum chloride to γ-aminopropyltriethoxysilane is 1:0.13. (2) Styrene, methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, and azobisisobutyronitrile are dissolved in butyl acetate to obtain mixture a; wherein the mass percentages of methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, styrene, azobisisobutyronitrile and butyl acetate are 36.0%, 9.0%, 7.0%, 0.4% and 47.6% respectively, and the sum of the mass percentages of the above components is 100%; the mixture a is stirred at 80 rpm for 12 hours in a water bath at 65°C, cooled, and vacuum dried at 45°C for 15 hours to obtain modified acrylic resin; (3) By mass, 10 parts of modified acrylic resin are heated to a molten state, and 1.0 part of modified quantum dots, 0.05 parts of boron nitride nanosheets, 0.005 parts of di-tert-butyl peroxide, and 0.03 parts of γ-aminopropyltriethoxysilane are added. The mixture is stirred at 100 rpm for 28 min and then cooled to obtain a quantum dot polymer film for chip-level point light sources.
[0032] Example 5 (1) Dissolve aluminum nitrate in anhydrous ethanol, add purified water at 2 mL / min and stir at 300 rpm for 30 min, add perovskite quantum dots CsPbBr3 at a rate of 15 mg perovskite quantum dots (dry weight) / mmol aluminum nitrate, react for 30 min, the molar ratio of aluminum nitrate, water and anhydrous ethanol is 1:0.5:12, add composite silicon source dropwise at 5 s / 1, maintain the system temperature at 35℃, after the addition is complete, continue stirring at 300 rpm for 40 min, age for 60 h, add ethanol for solvent replacement for 6 h, repeat 3 times, dry at 100℃ for 12 h to obtain modified quantum dots; the composite silicon source is composed of γ-aminopropyltriethoxysilane, γ-(methacryloyloxy)propyltrimethoxysilane and triethyl borate in a molar ratio of 0.108:0.072:0.01; the molar ratio of aluminum nitrate to γ-aminopropyltriethoxysilane is 1:0.11; (2) Styrene, methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, and azobisisobutyronitrile are dissolved in butyl acetate to obtain mixture a; wherein the mass percentages of methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, styrene, azobisisobutyronitrile and butyl acetate are 44.0%, 7.5%, 9.0%, 0.2% and 39.3% respectively, and the sum of the mass percentages of the above components is 100%; the mixture a is stirred at 80 rpm for 15 hours in a water bath at 75°C, cooled, and vacuum dried at 55°C for 20 hours to obtain modified acrylic resin; (3) By mass, 20 parts of modified acrylic resin are heated to the molten state, and 4.0 parts of modified quantum dots, 0.1 parts of boron nitride nanosheets, 0.005 parts of di-tert-butyl peroxide, and 0.08 parts of γ-aminopropyltriethoxysilane are added. The mixture is kept warm and stirred for 22 minutes, and then cooled to obtain a quantum dot polymer film for chip-level point light source.
[0033] Comparative Example 1 The difference between Comparative Example 1 and Example 2 is that inorganic aluminum salt is not added, while the rest of the preparation steps are the same as in Example 2.
[0034] Comparative Example 2 The difference between Comparative Example 2 and Example 2 is that KH570 is not added in the preparation of the modified quantum dots, while the other preparation steps are the same as in Example 2.
[0035] Comparative Example 3 The difference between Comparative Example 3 and Example 2 is that γ-aminopropyltriethoxysilane is not added in the preparation of modified quantum dots, while the other preparation steps are the same as in Example 2.
[0036] Comparative Example 4 The difference between Comparative Example 4 and Example 2 is that triethyl borate is not added in the preparation of the modified quantum dots, while the other preparation steps are the same as in Example 2.
[0037] Comparative Example 5 The difference between Comparative Example 5 and Example 2 is that quantum dots are used directly without coating treatment, while the other preparation steps are the same as in Example 2.
[0038] Comparative Example 6 The difference between Comparative Example 6 and Example 2 is that styrene is not added, while the rest of the preparation steps are the same as in Example 2.
[0039] Comparative Example 7 The difference between Comparative Example 7 and Example 2 is that bis(2-methylpropene)ethoxydisulfide is not added, while the rest of the preparation steps are the same as in Example 2.
[0040] Table 1 It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No markings in the claims should be construed as limiting the scope of the claims.
Claims
1. A quantum dot polymer film for chip-scale point light sources, comprising, by weight, 5-25 parts modified acrylic resin, 0.1-5 parts modified quantum dots, 0.05-1.0 parts boron nitride nanosheets, 0.005 parts initiator, and 0.01-0.1 parts silane coupling agent, characterized in that, The modified quantum dots are perovskite quantum dots with a boron-doped silicon-aluminum composite coating layer on their surface. The boron-doped silicon-aluminum composite coating layer is formed by in-situ hydrolysis and condensation of inorganic aluminum salt and composite silicon source on the surface of perovskite quantum dots. The specific preparation method is as follows: after mixing inorganic aluminum salt, solvent and perovskite quantum dots, react for 20-40 min, add composite silicon source, maintain the temperature at 30-35℃, and continue to react for 30-60 min to obtain modified quantum dots; The inorganic aluminum salt is one of aluminum nitrate, aluminum dihydrogen phosphate, or aluminum chloride; The composite silicon source is composed of γ-aminopropyltriethoxysilane, γ-(methacryloyloxy)propyltrimethoxysilane, and triethyl borate, with a molar ratio of (0.05-0.15):(0.01-0.1):(0.01-0.05).
2. The quantum dot polymer film for chip-level point light sources according to claim 1, characterized in that, The solvent includes water and alcohol solvents, wherein the alcohol solvents include at least one of anhydrous ethanol, isopropanol, ethylene glycol, n-propanol, diethylene glycol, and 2-methoxyethanol; preferably, the molar ratio of inorganic aluminum salt, water, and alcohol solvent is 1:(0-3):(10-25).
3. The quantum dot polymer film for chip-level point light sources according to claim 1, characterized in that, The perovskite quantum dots have structural formulas AMX3, A3M2X9, A2MX6, and Q2A. m-1 M m X 3m+1 At least one of the following; wherein A is NH2CHNH 2 + CH3NH 3+ Cs + At least one of them; M is Pb 2+ Cd 2+ Mn 2+ Zn 2+ Sn 2+ 、Ge 2+ Bi 3+ At least one of the following; X is at least one of the halide anions; Q is an aromatic group or an alkyl organic amine cation with not less than 3 carbon atoms; m is any value between 1 and 100; the amount of perovskite quantum dots used is 10-20 mg perovskite quantum dots dry weight / mmol inorganic aluminum salt.
4. The quantum dot polymer film for chip-level point light sources according to claim 1, characterized in that, The modified quantum dots are prepared under a constant stirring process.
5. A quantum dot polymer film for chip-scale point light sources according to claim 4, characterized in that, The stirring speed is 300-600 rpm.
6. The quantum dot polymer film for chip-level point light sources according to claim 1, characterized in that, The pure water and composite silicon source are added at rates of 1-3 mL / min and 5-10 s / drop, respectively.
7. A quantum dot polymer film for chip-scale point light sources according to claim 1, characterized in that, The preparation of the modified quantum dots also includes aging, displacement, and drying steps.
8. A quantum dot polymer film for chip-scale point light sources according to claim 7, characterized in that, The aging time is 24-72 hours, the replacement time is 6-8 hours, the drying temperature is 80-100℃, and the drying time is 10-12 hours.
9. A quantum dot polymer film for chip-scale point light sources according to claim 1, characterized in that, The modified acrylic resin is prepared by dissolving styrene, methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, and azobisisobutyronitrile in butyl acetate, followed by reaction, cooling, and drying. The mass percentages of methyl methacrylate, bis(2-methylpropene)ethoxydisulfide, styrene, azobisisobutyronitrile, and butyl acetate are 35.0-45.0%, 7.0-10.0%, 6.0-10.0%, 0.1-0.5%, and 40-51%, respectively, and the sum of the mass percentages of the above components is 100%.
10. A method for preparing a quantum dot polymer film for a chip-scale point light source, characterized in that, The process includes the following steps: By weight, heat 5-25 parts of modified acrylic resin to a molten state, add 0.1-5 parts of modified quantum dots, 0.05-1.0 parts of boron nitride nanosheets, 0.001-0.005 parts of initiator, and 0.01-0.1 parts of γ-aminopropyltriethoxysilane, mix for 20-30 minutes, and then cool to obtain the final product.