A molybdenum-silicon alloy tube target for mask and a preparation method thereof

Abstract

The application provides a molybdenum-silicon alloy pipe target for a mask and a preparation method thereof, and the preparation method comprises the following steps: mixing Mo powder and Si powder, and then performing cold isostatic pressing to obtain a molybdenum-silicon alloy pipe blank; assembling the molybdenum-silicon alloy pipe blank and a back pipe, and then performing hot isostatic pressing to obtain the molybdenum-silicon alloy pipe target for the mask; and the hot isostatic pressing comprises first temperature and pressure rising, second temperature and pressure rising and cooling treatment which are sequentially performed. By performing cold isostatic pressing on the mixed powder first, a preformed molybdenum-silicon alloy pipe blank is obtained, and then the binding of the molybdenum-silicon alloy pipe blank and the back pipe is completed at the same time of densification forming of the molybdenum-silicon alloy pipe blank through hot isostatic pressing, so that the subsequent binding process is reduced, and the obtained molybdenum-silicon alloy pipe target has excellent density and bonding strength.

Description

Technical Field

[0001] This application belongs to the field of target preparation technology, and relates to a molybdenum-silicon alloy tube target for photomasks and its preparation method. Background Technology

[0002] Molybdenum-silicon alloy thin films are mainly used in photomasks in semiconductor photolithography. During photolithography, the light-shielding layer on the mask needs to precisely block light transmission. By adjusting the composition and deposition process, MoSi-based thin films can achieve high and uniform optical density (ensuring light shielding) and controllable anti-reflection properties (reducing stray reflections), which is crucial for forming high-fidelity patterns on the substrate.

[0003] As photolithography technology advances to smaller nodes, traditional binary masks are limited by diffraction effects. Phase-shifting mask technology uses materials such as MoSi to introduce a 180° phase shift, so that the light intensity at the boundary of adjacent patterns approaches zero due to interference cancellation, thereby significantly improving imaging contrast and resolution. Among them, the core role of the MoSi layer is to precisely control the phase of light.

[0004] Due to its advantages such as high material utilization, good film uniformity, high process stability and high yield, tubular targets are widely used by coating manufacturers to deposit MoSi alloy thin films. Currently, the preparation process of tubular targets is usually as follows: a tubular target blank of finished size is obtained through processes such as powder mixing, sintering, densification and machining. The finished tubular target blank is then bonded to a stainless steel back tube by indium solder, and finally the finished tubular target is obtained by machining.

[0005] However, traditional target preparation methods have two shortcomings: first, the target blank preparation process is cumbersome; second, the indium soldering process limits the target blank's operating temperature (<160℃), and there is a risk of desoldering during use, resulting in low bonding strength.

[0006] Therefore, it is necessary to study a simple process for preparing a molybdenum-silicon alloy tube target with high bonding strength, so that the prepared molybdenum-silicon alloy tube target can meet the application requirements of photomasks. Summary of the Invention

[0007] The purpose of this application is to provide a molybdenum-silicon alloy tube target for photomasks and its preparation method. The method involves first performing cold isostatic pressing on the mixed powder to obtain a pre-formed molybdenum-silicon alloy tube blank, and then using hot isostatic pressing to achieve densification of the molybdenum-silicon alloy tube blank while simultaneously bonding it to the back tube, thus reducing subsequent bonding processes.

[0008] To achieve the purpose of this application, the following technical solution is adopted: In a first aspect, this application provides a method for preparing a molybdenum-silicon alloy tube target for a photomask, the method comprising: Mo powder and Si powder are mixed and then subjected to cold isostatic pressing to obtain a molybdenum-silicon alloy tube blank. The molybdenum-silicon alloy tube blank and the back tube are assembled, and then hot isostatic pressing is performed to obtain the molybdenum-silicon alloy tube target for the photomask. The hot isostatic pressing includes a first heating and pressurization, a second heating and pressurization, and a cooling process performed sequentially.

[0009] The preparation method provided in this application first performs cold isostatic pressing on the mixed powder to obtain a pre-formed molybdenum-silicon alloy tube blank, and then achieves densification of the molybdenum-silicon alloy tube blank and bonding with the back tube at the same time through hot isostatic pressing, reducing subsequent bonding processes. The resulting molybdenum-silicon alloy tube target has excellent density and bonding strength, meeting the application requirements of high-end photomasks.

[0010] It should be noted that the hot isostatic pressing process using a specific temperature and pressure regime achieves initial densification and tight bonding between the molybdenum-silicon alloy tube blank and the back tube through a first heating and pressing stage at low temperature and low pressure. Then, a second heating and pressing stage at high temperature and high pressure completes the densification and solid-state diffusion bonding at the interface. Finally, a controlled cooling process eliminates residual stress, thereby achieving a high-strength bond and near-net-shape forming between the tube blank and the back tube while avoiding thermal shock and microstructure enlargement.

[0011] In some embodiments, the mass ratio of Mo powder to Si powder is (42-50):(50-58), for example, it can be 42:58, 43:57, 44:56, 45:55, 46:54, 47:53, 48:52, 49:51 or 50:50, etc.

[0012] In some embodiments, the average particle size of the Mo powder is 6μm-7μm, for example, it can be 6.1μm, 6.2μm, 6.3μm, 6.4μm, 6.5μm, 6.6μm, 6.7μm, 6.8μm or 6.9μm, etc.

[0013] In some embodiments, the average particle size of the Si powder is 6μm-7μm, for example, it can be 6.1μm, 6.2μm, 6.3μm, 6.4μm, 6.5μm, 6.6μm, 6.7μm, 6.8μm or 6.9μm, etc.

[0014] In some embodiments, the mixing is carried out in an inert gas protected, three-dimensional mixing apparatus.

[0015] In some embodiments, the inert gas includes argon.

[0016] In some embodiments, the mixing speed is 20 rpm to 40 rpm, for example, it can be 22 rpm, 24 rpm, 25 rpm, 26 rpm, 28 rpm, 30 rpm, 32 rpm, 34 rpm, 35 rpm, 36 rpm or 38 rpm, etc.

[0017] In some embodiments, the mixing time is 40h-50h, for example, it can be 41h, 42h, 43h, 44h, 45h, 46h, 47h, 48h or 49h, etc.

[0018] In some embodiments, the pressure of the cold isostatic pressing is 200MPa-250MPa, for example, it can be 205MPa, 210MPa, 215MPa, 220MPa, 225MPa, 230MPa, 235MPa, 240MPa or 245MPa, etc.

[0019] By controlling the pressure range of cold isostatic pressing, the relative density of the tube blank is increased, forming a molybdenum-silicon alloy tube blank with a regular shape and uniform structure, which facilitates subsequent processing.

[0020] In some embodiments, the holding time of the cold isostatic pressing is 10 min-20 min, for example, it can be 11 min, 12 min, 13 min, 14 min, 15 min, 16 min, 17 min, 18 min or 19 min, etc.

[0021] In some embodiments, after cold isostatic pressing and before assembly, the process further includes machining the molybdenum-silicon alloy tube blank.

[0022] In some embodiments, the concentricity of the machined molybdenum-silicon alloy tube blank is <0.2mm, for example, it can be 0.18mm, 0.16mm, 0.15mm, 0.14mm, 0.12mm, 0.1mm, 0.08mm or 0.05mm, etc.

[0023] In some embodiments, the flatness of the machined molybdenum-silicon alloy tube blank is <0.2mm, for example, it can be 0.18mm, 0.16mm, 0.15mm, 0.14mm, 0.12mm, 0.1mm, 0.08mm or 0.05mm, etc.

[0024] In some embodiments, the assembly gap between the molybdenum-silicon alloy tube blank and the back tube in the assembled assembly is <0.3mm, for example, it can be 0.28mm, 0.26mm, 0.25mm, 0.24mm, 0.22mm, 0.2mm, 0.18mm or 0.15mm, etc.

[0025] In some embodiments, the back tube is made of stainless steel; during assembly, the back tube is fitted onto the inner wall of the molybdenum-silicon alloy tube blank.

[0026] In some embodiments, the assembly process, before hot isostatic pressing, further includes placing the assembled assembly in a sleeve for degassing.

[0027] In some embodiments, the temperature of the degassing treatment is 500℃-600℃, for example, it can be 510℃, 520℃, 530℃, 540℃, 550℃, 560℃, 570℃, 580℃ or 590℃, etc.

[0028] In some embodiments, the vacuum degree of the degassing treatment is ≤5×10⁻⁶. -3 Pa, for example, could be 4.5 × 10 -3 Pa, 4×10 -3 Pa, 3.5 × 10 -3 Pa, 3×10 -3 Pa, 2×10 -3 Pa or 1×10 -3 Pa, etc.

[0029] In some embodiments, vacuum thermal degassing of the casing ensures that the target can be densified during hot isostatic pressing.

[0030] In some embodiments, the degassing treatment time is 2h-4h, for example, it can be 2.2h, 2.5h, 2.6h, 2.8h, 3h, 3.2h, 3.5h, 3.6h or 3.8h, etc.

[0031] In some embodiments, the temperature of the first heating and pressurization is 500℃-600℃, for example, it can be 510℃, 520℃, 530℃, 540℃, 550℃, 560℃, 570℃, 580℃ or 590℃, etc.

[0032] In some embodiments, the pressure of the first heating and pressurization is 15MPa-25MPa, for example, it can be 16MPa, 17MPa, 18MPa, 19MPa, 20MPa, 21MPa, 22MPa, 23MPa or 24MPa, etc.

[0033] In some embodiments, the holding time for the first heating and pressurization is 0.5h-1h, for example, it can be 0.6h, 0.7h, 0.8h or 0.9h.

[0034] In some embodiments, the second temperature for heating and pressurizing is 970°C-1100°C, for example, it can be 980°C, 990°C, 1000°C, 1010°C, 1020°C, 1030°C, 1040°C, 1050°C, 1060°C, 1080°C or 1090°C.

[0035] In some embodiments, the pressure of the second heating and pressurization is 125MPa-140MPa, for example, it can be 126MPa, 128MPa, 130MPa, 132MPa, 135MPa, 136MPa or 138MPa, etc.

[0036] In some embodiments, the holding time for the second heating and pressurization is 3h-5h, for example, it can be 3.2h, 3.5h, 3.6h, 3.8h, 4h, 4.2h, 4.5h, 4.6h or 4.8h, etc.

[0037] In some embodiments, the cooling rate of the cooling process is <8°C / min, for example, it may be 7.5°C / min, 7°C / min, 6.5°C / min, 6°C / min, 5°C / min or 4°C / min, etc.

[0038] By controlling the temperature and pressure parameters during the first heating and pressurization process, pre-densification is achieved, which initially closes the pores inside the tube blank and allows gas to escape fully. At the same time, it avoids the formation of cracks at the interface between the back tube and the tube blank due to a sudden increase in thermal stress. By controlling the temperature and pressure parameters during the second heating and pressurization process, the synergistic optimization of densification and diffusion bonding is achieved, so as to prepare a molybdenum-silicon alloy tube target for masking with high density and high bonding strength. By controlling the range of cooling rates during furnace cooling, the release of thermal stress at the interface between the molybdenum-silicon alloy tube blank and the back tube can be effectively regulated.

[0039] Secondly, this application provides a molybdenum-silicon alloy tube target for a photomask, which is prepared using the preparation method described in the first aspect.

[0040] In some embodiments, the density of the molybdenum-silicon alloy target used for the photomask is >99%, for example, it can be 99.1%, 99.2%, 99.3%, 99.4%, 99.5%, 99.6%, 99.8%, or 99.9%, etc.

[0041] In some embodiments, the bonding strength between the molybdenum-silicon alloy tube blank and the back tube in the photomask using the molybdenum-silicon alloy tube target is 50MPa-60MPa, for example, it can be 51MPa, 52MPa, 53MPa, 54MPa, 55MPa, 56MPa, 57MPa, 58MPa or 59MPa, etc.

[0042] The molybdenum-silicon alloy tube target for photomasks provided in this application has excellent density and bonding strength, meeting the high-performance requirements as a tubular target material.

[0043] The numerical range described in this application includes not only the point values ​​listed above, but also any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of brevity, this application will not exhaustively list the specific point values ​​included in the range.

[0044] Compared with the prior art, this application has the following advantages: (1) The preparation method provided in this application first performs cold isostatic pressing on the mixed powder to obtain a pre-formed molybdenum-silicon alloy tube blank, and then achieves densification of the molybdenum-silicon alloy tube blank and bonding with the back tube at the same time through hot isostatic pressing, thereby reducing the subsequent bonding process.

[0045] (2) The molybdenum-silicon alloy tube target for photomasks provided in this application adopts a specific processing procedure to achieve the preparation of high-performance tube targets. The density of the obtained molybdenum-silicon alloy tube target is >99%, and the bonding strength between the molybdenum-silicon alloy tube blank and the back tube is 50MPa-60MPa, which meets the application requirements of high-end photomasks. Detailed Implementation

[0046] The technical solution of this application will be further described below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely to help understand this application and should not be regarded as specific limitations on this application.

[0047] All materials used in the specific embodiments of this application are commercially available or prepared using conventional methods in the prior art. All methods employed are conventional techniques in this field.

[0048] Example 1 This embodiment provides a method for preparing a molybdenum-silicon alloy tube target for a photomask, the method comprising the following steps: (1) Mo powder with an average particle size of 6μm-7μm and Si powder with an average particle size of 6μm-7μm were loaded into a mixing tank at a mass ratio of 46:54. The mixing tank was filled with argon gas for protection. The mixture was carried out in a three-dimensional mixing device at a speed of 30rpm for 45h. Then, it was subjected to cold isostatic pressing at a pressure of 230MPa for 15min to obtain a molybdenum-silicon alloy tube blank. (2) The molybdenum-silicon alloy tube blank is machined to ensure that the concentricity of the molybdenum-silicon alloy tube blank is 0.1 mm and the flatness is 0.1 mm. Then, the stainless steel back tube is sleeved on the inner wall of the machined molybdenum-silicon alloy tube blank to ensure that the assembly gap between the molybdenum-silicon alloy tube blank and the stainless steel back tube in the assembled body is 0.2 mm. Then, the assembled body is placed in the sleeve and degassing and hot isostatic pressing are performed in sequence to obtain the molybdenum-silicon alloy tube target for the photomask. The degassing process is performed at a temperature of 550°C and a vacuum degree of 3×10⁻⁶. -3 Pa, time is 3 hours; The hot isostatic pressing includes a first heating and pressurization, a second heating and pressurization, and a cooling process performed sequentially; the temperature of the first heating and pressurization is 560℃, the pressure is 20MPa, and the holding time is 0.6h; the temperature of the second heating and pressurization is 1000℃, the pressure is 130MPa, and the holding time is 4h; the cooling rate of the cooling process is 5℃ / min.

[0049] Example 2 This embodiment provides a method for preparing a molybdenum-silicon alloy tube target for a photomask, the method comprising the following steps: (1) Mo powder with an average particle size of 6μm-7μm and Si powder with an average particle size of 6μm-7μm were loaded into a mixing tank at a mass ratio of 50:50. The mixing tank was filled with argon gas for protection. The mixture was carried out in a three-dimensional mixing device at a speed of 40rpm for 41h. Then, it was subjected to cold isostatic pressing at a pressure of 200MPa for 20min to obtain a molybdenum-silicon alloy tube blank. (2) The molybdenum-silicon alloy tube blank is machined to ensure that the concentricity of the molybdenum-silicon alloy tube blank is 0.15 mm and the flatness is 0.1 mm. Then, the stainless steel back tube is sleeved on the inner wall of the machined molybdenum-silicon alloy tube blank to ensure that the assembly gap between the molybdenum-silicon alloy tube blank and the stainless steel back tube in the assembled body is 0.1 mm. Then, the assembled body is placed in the sleeve and degassing and hot isostatic pressing are performed in sequence to obtain the molybdenum-silicon alloy tube target for the photomask. The degassing process is performed at a temperature of 500°C and a vacuum degree of 4×10⁻⁶. -3 Pa, time is 4 hours; The hot isostatic pressing includes a first heating and pressurization, a second heating and pressurization, and a cooling process performed sequentially; the temperature of the first heating and pressurization is 510℃, the pressure is 25MPa, and the holding time is 1h; the temperature of the second heating and pressurization is 980℃, the pressure is 128MPa, and the holding time is 5h; the cooling rate of the cooling process is 7℃ / min.

[0050] Example 3 This embodiment provides a method for preparing a molybdenum-silicon alloy tube target for a photomask, the method comprising the following steps: (1) Mo powder with an average particle size of 6μm-7μm and Si powder with an average particle size of 6μm-7μm were loaded into a mixing tank at a mass ratio of 48:52. The mixing tank was filled with argon gas for protection. The mixture was carried out in a three-dimensional mixing device at a speed of 20rpm for 50h. Then, it was subjected to cold isostatic pressing at a pressure of 250MPa for 12min to obtain a molybdenum-silicon alloy tube blank. (2) The molybdenum-silicon alloy tube blank is machined to ensure that the concentricity of the molybdenum-silicon alloy tube blank is 0.1 mm and the flatness is 0.15 mm. Then, the stainless steel back tube is sleeved on the inner wall of the machined molybdenum-silicon alloy tube blank to ensure that the assembly gap between the molybdenum-silicon alloy tube blank and the stainless steel back tube in the assembled body is 0.2 mm. Then, the assembled body is placed in the sleeve and degassing and hot isostatic pressing are performed in sequence to obtain the molybdenum-silicon alloy tube target for the photomask. The degassing process is performed at a temperature of 580°C and a vacuum degree of 3×10⁻⁶. -3 Pa, time is 2.5h; The hot isostatic pressing includes a first heating and pressurization, a second heating and pressurization, and a cooling process performed sequentially; the temperature of the first heating and pressurization is 600℃, the pressure is 15MPa, and the holding time is 0.5h; the temperature of the second heating and pressurization is 1100℃, the pressure is 140MPa, and the holding time is 3h; the cooling rate of the cooling process is 5℃ / min.

[0051] Example 4 This embodiment provides a method for preparing a molybdenum-silicon alloy tube target for a photomask. Except for the degassing temperature of 400°C in step (2), all other conditions are the same as in Example 1.

[0052] Example 5 This embodiment provides a method for preparing a molybdenum-silicon alloy tube target for a photomask. Except for the degassing temperature of 600°C in step (2), all other conditions are the same as in Example 1.

[0053] Example 6 This embodiment provides a method for preparing a molybdenum-silicon alloy tube target for a photomask. Except for the temperature of the first heating and pressurization step (2) being 400°C, all other conditions are the same as in Embodiment 1.

[0054] Example 7 This embodiment provides a method for preparing a molybdenum-silicon alloy tube target for a photomask. Except for the temperature of the first heating and pressurization step (2) being 700°C, all other conditions are the same as in Embodiment 1.

[0055] Example 8 This embodiment provides a method for preparing a molybdenum-silicon alloy tube target for a photomask. Except for the pressure of the first heating and pressurization step (2) being 60 MPa, all other conditions are the same as in Embodiment 1.

[0056] Example 9 This embodiment provides a method for preparing a molybdenum-silicon alloy tube target for a photomask. Except for the second heating and pressurization temperature in step (2) being 800°C, all other conditions are the same as in embodiment 1.

[0057] Example 10 This embodiment provides a method for preparing a molybdenum-silicon alloy tube target for a photomask. Except for the second heating and pressurization temperature in step (2) being 1200°C, all other conditions are the same as in embodiment 1.

[0058] Example 11 This embodiment provides a method for preparing a molybdenum-silicon alloy tube target for a photomask. Except for the pressure of the second heating and pressurization step (2) being 100 MPa, all other conditions are the same as in Embodiment 1.

[0059] Example 12 This embodiment provides a method for preparing a molybdenum-silicon alloy tube target for a photomask. Except for the pressure of the second heating and pressurization step (2), which is 180 MPa, all other conditions are the same as in Embodiment 1.

[0060] Comparative Example 1 This comparative example provides a method for preparing a molybdenum-silicon alloy tube target for a photomask. Except for step (1), which does not involve cold isostatic pressing, all other conditions are the same as in Example 1.

[0061] Comparative Example 2 This comparative example provides a method for preparing a molybdenum-silicon alloy tube target for a photomask. Except for step (2), which does not involve the first heating and pressurization, all other conditions are the same as in Example 1.

[0062] The density of the molybdenum-silicon alloy tube targets for photomasks prepared in the above embodiments and comparative examples was measured using the Archimedes displacement method. The density of the molybdenum-silicon alloy tube targets for photomasks was then calculated using the formula: Density (%) = Measured density / Theoretical density × 100%. The bonding strength between the molybdenum-silicon alloy tube blank and the stainless steel back tube in the molybdenum-silicon alloy tube targets for photomasks prepared in the above embodiments and comparative examples was tested using a tensile test.

[0063] The test results are shown in Table 1.

[0064] Table 1 As shown in Table 1: The method for preparing molybdenum-silicon alloy tube targets for photomasks provided in Examples 1-3 of this application, by adopting a specific processing procedure and combining the control of processing parameters, produces high-quality molybdenum-silicon alloy tube targets. Under preferred conditions, the density of the molybdenum-silicon alloy tube target is >99%, and the bonding strength between the molybdenum-silicon alloy tube blank and the stainless steel back tube is 50MPa-60MPa, which meets the application requirements of high-end photomasks.

[0065] A comparison of Examples 1 and 4-5 shows that if the degassing temperature is too low, too much gas will remain inside the casing. During the hot isostatic pressing process, the residual gas is compressed and locked in the closed pores, and the pores will hinder the diffusion between MoSi and stainless steel, resulting in a decrease in the density and bonding strength of the target tube. If the degassing temperature is too high, the MoSi target blank is prone to premature pre-sintering, forming a rigid skeleton with poor plasticity, which will also hinder welding diffusion, resulting in a decrease in the density of the target tube and insufficient welding strength.

[0066] A comparison of Examples 1, 6-8, and Comparative Example 2 reveals that if the temperature of the first heating and pressurization is too low, insufficient pre-densification buffering and pre-diffusion will lead to ineffective intermediate insulation, resulting in a decrease in both the density and bonding strength of the tube target. If the temperature of the first heating and pressurization is too high, premature pore formation will also cause a decrease in both the density and bonding strength of the tube target. Similarly, if the pressure of the first heating and pressurization is too high, premature pore closure will also lead to a decrease in both the density and bonding strength of the tube target. If the first heating and pressurization is not performed, the sheath will not yield smoothly and adhere to the blank under moderate temperature and pressure, which may easily lead to wrinkles, collapses, bulges, etc., resulting in insufficient density and bonding strength of the tube target.

[0067] A comparison of Examples 1 and 9-12 reveals that if the second heating and pressurization temperature is too low, insufficient densification and diffusion driving force will lead to a decrease in both the density and bonding strength of the target tube; if the second heating and pressurization temperature is too high, although it will not affect the density and bonding strength of the target tube, the welding interface is prone to forming more hard and brittle phases, which will become crack initiation sites, posing a risk of target tube cracking; if the second heating and pressurization pressure is too low, the insufficient tightness of the cladding and product, and the insufficient densification and diffusion will lead to a decrease in both the density and bonding strength of the target tube; if the second heating and pressurization pressure is too high, although it will not affect the density and bonding strength of the target tube, the increased residual stress will pose a risk of target tube cracking.

[0068] A comparison of Example 1 and Comparative Example 1 shows that if the mixed powder is directly subjected to hot isostatic pressing without cold isostatic pressing, the density and bonding strength of the resulting tube target will decrease due to the lack of pre-densification.

[0069] This application illustrates its detailed structural features through the above embodiments, but it is not limited to these detailed structural features, meaning that this application does not necessarily rely on them for implementation. Those skilled in the art should understand that any improvements to this application, equivalent substitutions of selected components, additions of auxiliary components, and selection of specific methods all fall within the protection and disclosure scope of this application.

Claims

1. A method for preparing a molybdenum-silicon alloy tube target for a photomask, characterized in that, The preparation method includes: Mo powder and Si powder are mixed and then subjected to cold isostatic pressing to obtain a molybdenum-silicon alloy tube blank. The molybdenum-silicon alloy tube blank and the back tube are assembled, and then hot isostatic pressing is performed to obtain the molybdenum-silicon alloy tube target for the photomask. The hot isostatic pressing includes a first heating and pressurization, a second heating and pressurization, and a cooling process performed sequentially.

2. The preparation method according to claim 1, characterized in that, The mass ratio of Mo powder to Si powder is (42-50):(50-58); And / or, the average particle size of the Mo powder is 6 μm-7 μm; And / or, the average particle size of the Si powder is 6μm-7μm.

3. The preparation method according to claim 1 or 2, characterized in that, The mixing is carried out in an inert gas protected, three-dimensional mixing device; And / or, the mixing speed is 20 rpm-40 rpm; And / or, the mixing time is 40h-50h.

4. The preparation method according to any one of claims 1-3, characterized in that, The pressure of the cold isostatic pressing is 200MPa-250MPa; And / or, the holding time for the cold isostatic pressing is 10 min to 20 min.

5. The preparation method according to any one of claims 1-4, characterized in that, After cold isostatic pressing and before assembly, the process further includes machining the molybdenum-silicon alloy tube blank. And / or, the concentricity of the machined molybdenum-silicon alloy tube blank is <0.2 mm; And / or, the flatness of the machined molybdenum-silicon alloy tube blank is <0.2mm.

6. The preparation method according to any one of claims 1-5, characterized in that, The assembly gap between the molybdenum-silicon alloy tube blank and the back tube in the assembled body is <0.3mm; And / or, after assembly and before hot isostatic pressing, the assembly is further comprising: placing the assembled body in a sleeve for degassing treatment; And / or, the temperature of the degassing treatment is 500℃-600℃; And / or, the vacuum degree of the degassing treatment is ≤5×10 -3 Pa; And / or, the degassing treatment time is 2h-4h.

7. The preparation method according to any one of claims 1-6, characterized in that, The temperature for the first heating and pressurization is 500℃-600℃; And / or, the pressure of the first heating and pressurization is 15MPa-25MPa; And / or, the holding time for the first heating and pressurization is 0.5h-1h.

8. The preparation method according to any one of claims 1-7, characterized in that, The second temperature increase and pressure rise is 970℃-1100℃; And / or, the pressure of the second heating and pressurization is 125MPa-140MPa; And / or, the holding time for the second heating and pressurization is 3h-5h; And / or, the cooling rate of the cooling process is <8°C / min.

9. A molybdenum-silicon alloy tube target for a photomask, characterized in that, The molybdenum-silicon alloy tube target for the mask is prepared using the preparation method described in any one of claims 1-8.

10. The molybdenum-silicon alloy tube target for a photomask according to claim 9, characterized in that, The density of the molybdenum-silicon alloy target used in the photomask is >99%; And / or, the bonding strength between the molybdenum-silicon alloy tube blank and the back tube in the photomask using the molybdenum-silicon alloy tube target is 50MPa-60MPa.

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