Physical vapor deposition apparatus for polygonal panels

Abstract

The present application provides a physical vapor deposition device for a polygonal panel, which includes a deposition cavity, a carrier disk, a target material, a magnetic device and a plurality of magnetic conductive patches. The carrier disk and the target material are located in the deposition cavity, wherein the carrier disk is used to carry a polygonal panel. One surface of the target material faces the carrier disk and the polygonal panel, and the other surface of the target material is provided with the magnetic device and forms a magnetic field in the deposition cavity through the magnetic device. The magnetic conductive patches are located between the magnetic device and the target material, wherein the vertical projections of the magnetic conductive patches respectively overlap with a plurality of corners of the polygonal panel and form a plurality of overlapping areas, which is conducive to improving the uniformity of the film deposited on the surface of the polygonal panel.

Description

Technical Field

[0001] The present invention relates to a physical vapor deposition apparatus for a polygonal panel, which is advantageous in reducing the film thickness deposited at multiple corners of the polygonal panel to improve the uniformity of the film on the surface of the polygonal panel. Background Technology

[0002] Panel-level packaging (PLP) is an advanced semiconductor packaging technology that uses large square panels instead of traditional round wafers as the substrate. This allows for the packaging of more chips in a single process, significantly improving production efficiency and reducing process costs. PLP technology is particularly suitable for chips with high throughput requirements, such as artificial intelligence (AI) chips, high-performance computing (HPC) chips, and radio frequency ICs.

[0003] Specifically, panel-level packaging involves rearranging and securing the die onto a large square panel, followed by molding, redistribution layer (RDL) setup, and solder ball placement. Because the square panel has a larger area than a round wafer, more dies can be packaged simultaneously in a single production run. Furthermore, square panels offer higher utilization rates, reducing waste from the dicing edges of round wafers and improving production efficiency.

[0004] Redistribution layer fabrication is a key technology in advanced packaging. It involves creating a metal layer on a panel to rearrange the chip's I / O contacts, optimizing electrical connections and improving packaging flexibility and reliability. Key steps in this process include using physical vapor deposition (PVD) to form a thin metal film on the chip mounted on the panel, combined with etching and photoresist processes to define circuits and vias.

[0005] Traditional physical vapor deposition (PVD) equipment mainly includes a chamber, a target, and a substrate carrier, with the carrier located within the chamber and used to support at least one wafer. During PVD, inert gas and / or reactive gas can be delivered into the chamber to apply bias voltages to the target and substrate carrier, respectively.

[0006] The inert gas inside the cavity is ionized by a high-voltage electric field. The ionized inert gas is then attracted by the bias voltage on the target and bombards the target. Target atoms or molecules sputtered from the target are attracted by the bias voltage on the carrier disk and deposited on the surface of the wafer to form a thin film.

[0007] Traditional physical vapor deposition equipment is mainly designed to deposit thin films on circular wafers. When applied to panel-level packaging, the different shape of the panel compared to the wafer often results in uneven film thickness on the panel, which in turn reduces the yield rate of the process. Summary of the Invention

[0008] To address this, the present invention proposes a physical vapor deposition apparatus for polygonal panels, which can improve the uniformity of the thin film deposited by the physical vapor deposition chamber on the polygonal substrate without increasing costs or changing the structure of the equipment.

[0009] One object of the present invention is to provide a physical vapor deposition apparatus for a polygonal panel, mainly comprising a deposition chamber, a support plate, a target, a magnetic device, and at least one magnetically conductive patch. The target is connected to the deposition chamber, wherein one surface of the target faces the support plate and the polygonal panel it supports, while the other surface of the target faces the magnetic device. The magnetically conductive patch is located between the magnetic device and the target and is used to change the distribution of the magnetic field strength within the deposition chamber.

[0010] Traditional physical vapor deposition (PVD) equipment is mainly used to deposit metal thin films on wafers. The magnetic actuator rotates around a central axis, which is beneficial for depositing uniform films on the circular wafer surface. However, when applying traditional PVD to square panels, the lack of continuous rotational symmetry in square panels leads to uneven film thickness at multiple corners and / or the center.

[0011] The present invention provides a plurality of magnetically conductive patches between the target material and the magnetic device, wherein the vertical projection of the magnetically conductive patches overlaps with the corner and / or center position of the polygonal panel, which can control the film thickness deposited at the corner and / or center position of the polygonal panel and facilitates the formation of a film with uniform thickness on the polygonal panel.

[0012] One objective of this invention is to provide a physical vapor deposition apparatus for polygonal panels, which mainly adjusts the film thickness deposited on the polygonal panel by changing the ratio of the area of ​​the magnetically conductive patch to the area of ​​the polygonal panel, thereby facilitating the formation of a film with uniform thickness on the polygonal panel.

[0013] One objective of this invention is to provide a physical vapor deposition apparatus for polygonal panels, which mainly adjusts the thickness of the film deposited on the polygonal panel by changing the size and position of the overlapping area between the magnetically conductive patch and the polygonal panel, thereby facilitating the formation of a film with uniform thickness on the polygonal panel.

[0014] To achieve the above objectives, the present invention proposes a physical vapor deposition apparatus for a polygonal panel, comprising: a deposition chamber including a receiving space; a support plate located within the receiving space and used to support at least one polygonal panel, wherein the polygonal panel includes multiple corners; a target material connected to the deposition chamber and including a first surface and a second surface, wherein the first surface and the second surface are two opposing surfaces on the target material, and the first surface of the target material faces the support plate; a magnetic device located in the direction of the second surface of the target material and used to form a magnetic field within the receiving space; and a plurality of first magnetically conductive patches disposed between the magnetic device and the target material, wherein the vertical projections of the plurality of first magnetically conductive patches overlap with multiple corners of the polygonal panel, forming a plurality of first overlapping regions.

[0015] This invention proposes another physical vapor deposition apparatus for polygonal panels, comprising: a deposition chamber including a receiving space; a support disk located within the receiving space and used to support at least one polygonal panel, wherein the polygonal panel includes multiple corners; a target material connected to the deposition chamber and including a first surface and a second surface, wherein the first surface and the second surface are two opposing surfaces on the target material, and the first surface of the target material faces the support disk; a magnetic device located in the direction of the second surface of the target material and used to form a magnetic field within the receiving space; and a first magnetically conductive patch disposed between the magnetically conductive patch and the target material, wherein the first magnetically conductive patch is annular, and the vertical projection of the first magnetically conductive patch overlaps with multiple corners of the polygonal panel, forming multiple first overlapping regions.

[0016] In at least one embodiment of the physical vapor deposition apparatus for polygonal panels of the present invention, a second magnetically conductive patch is disposed between a magnetic device and a target material, and the vertical projection of the second magnetically conductive patch overlaps with the central position of the polygonal panel to form a second overlapping area.

[0017] In at least one embodiment of the physical vapor deposition apparatus for the polygonal panel of the present invention, a plurality of first magnetically conductive patches are disposed around a second magnetically conductive patch.

[0018] In at least one embodiment of the physical vapor deposition apparatus for the polygonal panel of the present invention, the total area of ​​a plurality of first overlapping regions and second overlapping regions is between 1.5% and 20% of the area of ​​the polygonal panel.

[0019] In at least one embodiment of the physical vapor deposition apparatus for polygonal panels according to the present invention, the area of ​​each first magnetically conductive patch is between 1.5% and 15% of the area of ​​the polygonal panel.

[0020] In at least one embodiment of the physical vapor deposition apparatus for the polygonal panel of the present invention, the thickness of the first magnetic patch is between 0.05 mm and 2 mm.

[0021] In at least one embodiment of the physical vapor deposition apparatus for the polygonal panel of the present invention, the area of ​​the first overlapping region is between 1.5% and 55% of the area of ​​the first magnetic patch. Attached Figure Description

[0022] Figure 1 This is a cross-sectional schematic diagram of an embodiment of the physical vapor deposition apparatus for polygonal panels of the present invention. Figure 2 This is a top perspective view of an embodiment of the physical vapor deposition apparatus for a polygonal panel of the present invention. Figure 3 This is a partial perspective schematic diagram of an embodiment of the physical vapor deposition apparatus for a polygonal panel of the present invention. Figure 4 This is a top perspective view of another embodiment of the physical vapor deposition apparatus for the polygonal panel of the present invention. Figure 5 This is a partial perspective schematic diagram of yet another embodiment of the physical vapor deposition apparatus for a polygonal panel of the present invention.

[0023] Explanation of reference numerals in the attached figures 10: Physical Vapor Deposition Equipment 11: Deposition cavity 111: Stop 113: Fixing ring 12: Storage space 121: Reaction Space 13: Support plate 14: Polygon Panel 141: Side 143: Angle 15: Target Material 151: First Surface 153: Second Surface 17: Magnetic Device 171: Shaft 19: Magnetic conductive patch 191: First magnetic patch 1911: First Overlapping Region 193: Second magnetic patch 1931: Second overlapping region. Detailed Implementation

[0024] Please see Figure 1This is a cross-sectional schematic diagram of an embodiment of the physical vapor deposition apparatus for polygonal panels of the present invention. As shown in the figure, the physical vapor deposition apparatus 10 for polygonal panels 14 mainly includes a deposition chamber 11, a support plate 13, a target material 15, a magnetic device 17, and at least one magnetically conductive patch 19, wherein the support plate 13 is located inside the deposition chamber 11 and is used to support at least one polygonal panel 14.

[0025] Specifically, the deposition chamber 11 has a receiving space 12 for accommodating a support plate 13. The support plate 13 supports at least one polygonal panel 14, and the target 15 is connected to the deposition chamber 11 and faces the support plate 13 and the polygonal panel 14 it supports. Specifically, the deposition chamber 11 has an opening, for example, the opening is located above the deposition chamber 11, and the receiving space 12 is connected to the outside through the opening. The target 15 can be disposed on or cover the opening of the deposition chamber 11 and connected to the receiving space 12 of the deposition chamber 11, so that the target 15 and the deposition chamber 11 constitute a closed receiving space 12.

[0026] The carrier disk 13 can be displaced relative to the target 15, changing the distance between the carrier disk 13 and the target 15. Specifically, the carrier disk 13 can be displaced away from the target 15, and a robotic arm can transport the polygonal panel 14 into the deposition chamber 11 and place it on the carrier disk 13, or the robotic arm can transport the polygonal panel 14 on the carrier disk 13 to the outside of the deposition chamber 11. The carrier disk 13 can move the supported polygonal panel 14 closer to the target 15 to reduce the distance between the supported polygonal panel 14 and the target 15, and perform thin film deposition on the polygonal panel 14.

[0027] In one embodiment of the present invention, a baffle 111 may be provided in the accommodating space 12 of the deposition chamber 11, wherein one end of the baffle 111 is connected to the deposition chamber 11, and the other end of the baffle 111 is provided with a fixing ring 113. The carrier plate 13 can drive the supported polygonal panel 14 to move towards the target material 15, so that the polygonal panel 14 on the carrier plate 13 contacts the fixing ring 113 on the baffle 111. The deposition chamber 11, the carrier plate 13, the target material 15, the baffle 111 and the fixing ring 113 will separate a reaction space 121 in the accommodating space 12, and thin film deposition will be performed on the polygonal panel 14 on the carrier plate 13 in the reaction space 121.

[0028] During deposition, an electric field can be applied to the accommodating space 12, causing neutral gas atoms within the accommodating space 12 to be bombarded by electrons and form charged gas ions. A bias voltage is applied to the target 15 and the carrier disk 13, causing the gas ions to bombard the target 15 and generate a small number of target particles. The target particles generated by the bombardment are attracted by the bias voltage on the carrier disk 13 and deposited on the surface of the polygonal panel 14 to form a thin film on the surface of the polygonal panel 14.

[0029] Specifically, the target 15 includes a first surface 151 and a second surface 153, wherein the first surface 151 and the second surface 153 are two opposing surfaces on the target 15. The first surface 151 faces the carrier disk 13 and / or the polygonal panel 14. For example, the target 15 has an approximate disc shape, the first surface 151 is the lower surface of the target 15, and the second surface 153 is the upper surface of the target 15. To improve the probability of plasma gas atom ionization, a magnetic device 17 is usually provided in the direction of the second surface 153 of the target 15. The magnetic device 17 forms a magnetic field in the accommodating space 12 of the deposition chamber 11, causing the charged particles in the accommodating space 12 to move in a helical manner, increasing the movement path of the charged particles and the probability of colliding with neutral gas atoms. In addition, the magnetic device 17 can be connected to a rotating shaft 171, and the rotating shaft 171 drives the magnetic device 17 to rotate relative to the target 15 to improve the uniformity of the film deposited on the surface of the polygonal panel 14.

[0030] Currently used deposition equipment is designed to deposit thin films on wafers, which are generally circular in shape and have continuous rotational symmetry. Therefore, the magnetic device 17 of the deposition equipment rotates around the axis 171 to avoid excessive concentration of magnetic force, which would cause uneven thickness of the thin film deposited on the wafer.

[0031] In addition, conventional deposition equipment mainly improves the uniformity of the thin film deposited on the wafer by changing the arrangement of magnets on the magnetic device 17 or by increasing or decreasing the number of magnets on the magnetic device 17 to change the magnitude and distribution of the magnetic field formed by the magnetic device 17 in the deposition chamber 11.

[0032] However, the above-described methods for adjusting the magnetic field are primarily suitable for improving the uniformity of thin film deposition on wafers with continuous rotational symmetry. The polygonal panel 14 used in panel-level packaging does not possess continuous rotational symmetry, therefore the above methods cannot effectively improve the uniformity of the thin film deposited on the polygonal panel 14.

[0033] To address the shortcomings of traditional deposition equipment applied to polygonal panels 14, this invention proposes a physical vapor deposition (PVD) apparatus 10 for polygonal panels 14. This apparatus primarily comprises at least one magnetically conductive patch 19 positioned between a magnetic actuator 17 and a target material 15. The magnetically conductive patch 19 adjusts the magnitude and distribution of the magnetic field generated by the magnetic actuator 17 within the deposition chamber 11, resulting in a thin film of uniform thickness deposited on the polygonal panel 14. The magnetically conductive patch 19 is made of a conductive material, such as stainless steel, iron, steel, nickel, cobalt, or their alloys.

[0034] Specifically, the polygonal panel 14 has multiple sides 141 and multiple corners 143, where a corner 143 is the intersection of two sides 141. In one embodiment of the present invention, multiple magnetically conductive patches 19 may be disposed between the magnetic device 17 and the target material 15, wherein the magnetically conductive patches 19 include multiple first magnetically conductive patches 191. The first magnetically conductive patches 191 are disposed between the magnetic device 17 and the target material 15, wherein the vertical projections of the multiple first magnetically conductive patches 191 overlap with the multiple corners 143 of the polygonal panel 14, forming multiple first overlapping regions 1911. For example, the vertical projection may be the projection of the first magnetically conductive patches 191 along the surface of the vertical support disk 13.

[0035] In practical applications, the number of first magnetically conductive patches 191 can be the same as the number of corner patches 143 of the polygonal panel 14. For example... Figure 2 and Figure 3 As shown, the polygonal panel 14 is quadrilateral, and there are four first magnetically conductive patches 191, wherein the vertical projections of the four first magnetically conductive patches 191 overlap with the four corners 143 of the polygonal panel 14. The quadrilateral shape of the polygonal panel 14 and the number of four first magnetically conductive patches 191 are merely one embodiment of the present invention and are not a limitation of the scope of the invention. In different embodiments, the polygonal panel 14 may be a pentagon or hexagon, or other geometric shapes that do not possess continuous rotational symmetry.

[0036] In another embodiment of the present invention, the magnetically conductive patch 19 may include at least one second magnetically conductive patch 193, wherein the second magnetically conductive patch 193 is disposed between the magnetic device 17 and the target material 15, and a plurality of first magnetically conductive patches 191 are disposed around the second magnetically conductive patch 193. Furthermore, the distance between the second magnetically conductive patch 193 and each of the first magnetically conductive patches 191 may be the same, wherein the vertical projection of the second magnetically conductive patch 193 overlaps with the central position of the polygonal panel 14, forming a second overlapping region 1931, for example, the second magnetically conductive patch 193 overlaps with the geometric center of the polygonal panel 14.

[0037] The first magnetically conductive patch 191 and the second magnetically conductive patch 193 can be disposed on the first surface 151 of the target material 15 by means of screws, adhesives or welding, so as to prevent the first magnetically conductive patch 191 and the second magnetically conductive patch 193 from being attracted by the magnetic device 17 and leaving their original preset positions.

[0038] In one embodiment of the present invention, the area of ​​each first magnetically conductive patch 191 and / or second magnetically conductive patch 193 is approximately 1.5% to 15% of the area of ​​the polygonal panel 14. For example, the polygonal panel 14 may be a square panel of 310mm × 310mm, the first magnetically conductive patch 191 may be a square patch of 40mm × 40mm to 120mm × 120mm, and the second magnetically conductive patch 193 may be a square patch of 40mm × 40mm to 120mm × 120mm.

[0039] In the above embodiments of the present invention, the first magnetically conductive patch 191 and the second magnetically conductive patch 193 are square. In different embodiments, the first magnetically conductive patch 191 and the second magnetically conductive patch 193 can be circular or any polygon. In addition, the thickness of the first magnetically conductive patch 191 and the second magnetically conductive patch 193 can be between 0.05 mm and 2 mm.

[0040] The vertical projection of the second magnetic patch 193 overlaps with the polygonal panel 14, while the vertical projection of the first magnetic patch 191 partially overlaps with the polygonal panel 14. In one embodiment of the present invention, the area of ​​the first overlapping region 1911 between the vertical projection of the first magnetic patch 191 and the polygonal panel 14 is approximately 1.5% to 55% of the area of ​​the first magnetic patch 191, while the vertical projection of the second magnetic patch 193 is entirely located within the polygonal panel 14. Furthermore, the total area of ​​the first overlapping region 1911 and the second overlapping region 1931 is approximately 1.5% to 20% of the area of ​​the polygonal panel 14.

[0041] In practical applications, the first magnetically conductive patch 191 and the second magnetically conductive patch 193 may have the same appearance and size. However, in different embodiments, the appearance and size of the first magnetically conductive patch 191 and the second magnetically conductive patch 193 may be different. In different embodiments, only the first magnetically conductive patch 191 may be provided between the magnetic device 17 and the target material 15, without providing the second magnetically conductive patch 193.

[0042] In another embodiment of the invention, such as Figure 4 and Figure 5As shown, there is one first magnetically conductive patch 191 and one second magnetically conductive patch 193. The first magnetically conductive patch 191 is annular, while the second magnetically conductive patch 193 is surrounded by a circle or a polygon. The first magnetically conductive patch 191 is arranged around the second magnetically conductive patch 193. The vertical projection of the annular first magnetically conductive patch 191 overlaps with multiple corners 143 of the polygonal panel 14, forming multiple first overlapping areas 1911. The vertical projection of the second magnetically conductive patch 193 overlaps with the center of the polygonal panel 14, forming a second overlapping area 1931. For example, the first magnetically conductive patch 191 can be annular or polygonal.

[0043] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. All equivalent variations and modifications made in accordance with the shape, structure, features and spirit described in the claims of the present invention should be included within the scope of the claims of the present invention.

Claims

1. A physical vapor deposition apparatus for a polygonal panel, characterized in that, include: A deposition chamber, including a receiving space; A carrier plate is located within the accommodating space and is used to carry at least one polygonal panel, wherein the polygonal panel includes multiple corners; A target material is connected to the deposition chamber and includes a first surface and a second surface, wherein the first surface and the second surface are two opposing surfaces on the target material, and the first surface of the target material faces the support plate. A magnetic device is located on the second surface of the target material and is used to form a magnetic field within the accommodating space; Multiple first magnetic conductive patches are disposed between the magnetic device and the target material, wherein the vertical projection of the multiple first magnetic conductive patches overlaps with the multiple corners of the polygonal panel, forming multiple first overlapping areas.

2. The physical vapor deposition apparatus for polygonal panels according to claim 1, characterized in that, The device includes a second magnetically conductive patch disposed between the magnetic device and the target material. The vertical projection of the second magnetically conductive patch overlaps with the center position of the polygonal panel, forming a second overlapping area.

3. The physical vapor deposition apparatus for polygonal panels according to claim 2, characterized in that, The plurality of first magnetic pads are arranged around the second magnetic pad.

4. The physical vapor deposition apparatus for polygonal panels according to claim 3, characterized in that, The total area of ​​the plurality of first overlapping regions and the second overlapping region is between 1.5% and 20% of the area of ​​the polygonal panel.

5. The physical vapor deposition apparatus for polygonal panels according to claim 1, characterized in that, The area of ​​each of the first magnetically conductive patches is between 1.5% and 15% of the area of ​​the polygonal panel.

6. The physical vapor deposition apparatus for polygonal panels according to claim 5, characterized in that, The thickness of the first magnetic patch is between 0.05 mm and 2 mm.

7. The physical vapor deposition apparatus for polygonal panels according to claim 5, characterized in that, The area of ​​the first overlapping region is between 1.5% and 55% of the area of ​​the first magnetic patch.

8. A physical vapor deposition apparatus for a polygonal panel, characterized in that, include: A deposition chamber, including a receiving space; A carrier plate is located within the accommodating space and is used to carry at least one polygonal panel, wherein the polygonal panel includes multiple corners; A target material is connected to the deposition chamber and includes a first surface and a second surface, wherein the first surface and the second surface are two opposing surfaces on the target material, and the first surface of the target material faces the support plate. A magnetic device is located on the second surface of the target material and is used to form a magnetic field within the accommodating space; A first magnetically conductive patch is disposed between the magnetic device and the target material. The first magnetically conductive patch is annular, and its vertical projection overlaps with the multiple corners of the polygonal panel to form multiple first overlapping areas.

9. The physical vapor deposition apparatus for polygonal panels according to claim 8, characterized in that, The device includes a second magnetically conductive patch located between the magnetic device and the target material. The vertical projection of the second magnetically conductive patch overlaps with the center of the polygonal panel, forming a second overlapping area.

10. The physical vapor deposition apparatus for polygonal panels according to claim 9, characterized in that, The first magnetic patch is disposed around the second magnetic patch.

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