Mpcvd apparatus and process control method thereof

Abstract

The application discloses an MPCVD device and a process control method thereof. The device comprises a cavity, a bearing table, a spray plate and a temperature measuring mechanism. The bearing table is arranged in the cavity and used for bearing a wafer. The spray plate is rotatably arranged in the cavity and above the bearing table and used for spraying process gas to the surface of the wafer. The temperature measuring mechanism comprises a control module, a first driving assembly and an infrared temperature measuring array. The infrared temperature measuring array is arranged on the lower surface of the spray plate, and the temperature measuring points of the infrared temperature measuring array correspond to the radial surface of the wafer and are used for detecting the temperature parameters of the surface of the wafer. The first driving assembly is connected with the spray plate and drives the spray plate to rotate around an axis, so that the temperature measuring points of the infrared temperature measuring array move along the circumference of the wafer. The control module is connected with the first driving assembly and the infrared temperature measuring array and is used for controlling the driving action and receiving and processing the temperature parameters. The application can realize the multi-point continuous measurement of the surface temperature of the wafer without interfering with the microwave plasma in the cavity, effectively improves the temperature measuring coverage range and the temperature field characterization precision.

Description

Technical Field

[0001] This invention relates to the field of MPCVD equipment technology, and in particular to an MPCVD equipment and its process control method. Background Technology

[0002] MPCVD (microwave plasma chemical vapor deposition) equipment is widely used in the field of semiconductor thin film preparation (such as diamond thin film deposition). During the MPCVD process, the temperature distribution on the wafer surface is directly related to the quality and uniformity of the thin film deposition, therefore, accurate monitoring of the wafer surface temperature is crucial.

[0003] In existing technologies, single-point infrared thermometry is typically used to detect the temperature of the wafer surface within a cavity. Specifically, an infrared sensor is fixedly mounted outside the cavity, and the temperature of the internal wafer is measured through a quartz window on the cavity surface. To obtain temperature information at different locations on the wafer surface, sometimes the infrared sensor is rotated to achieve multi-point measurements.

[0004] However, the aforementioned existing temperature measurement schemes have significant technical limitations. First, with the quartz window fixed to the chamber surface, the angle between the sensor's optical axis and the quartz window during infrared sensor rotation causes infrared light loss as it passes through the window, directly affecting the accuracy of the temperature measurement results. Second, limited by single-point or small-range rotation, this scheme struggles to obtain comprehensive temperature distribution data for all areas of the wafer surface, failing to provide a complete characterization of the temperature field on the wafer surface.

[0005] Therefore, how to improve the temperature measurement coverage and accuracy of MPCVD equipment in wafer surface temperature detection is a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0006] This invention provides an MPCVD equipment and its process control method, which solves the problems of low detection accuracy and difficulty in obtaining the complete temperature field distribution on the wafer surface in the existing MPCVD equipment temperature measurement scheme.

[0007] In a first aspect, embodiments of the present invention provide an MPCVD apparatus, comprising: a cavity; a support stage disposed within the cavity for supporting a wafer; a spray plate rotatably disposed within the cavity and above the support stage for spraying process gases onto the surface of the wafer; and a temperature measuring mechanism including a control module, a first driving component, and an infrared temperature measuring array; the infrared temperature measuring array being disposed on the lower surface of the spray plate with temperature measuring points corresponding to the radial surface of the wafer, for detecting temperature parameters on the wafer surface; the first driving component being disposed on the top of the cavity and connected to the spray plate, for driving the spray plate to rotate around its axis, so that the temperature measuring points of the infrared temperature measuring array move along the circumference of the wafer; and the control module being connected to the first driving component and the infrared temperature measuring array, for controlling the driving action of the first driving component and receiving and processing the temperature parameters.

[0008] In the MPCVD equipment provided in this embodiment of the invention, the infrared temperature measurement array includes multiple infrared temperature measurement units distributed radially along the spray plate, and the temperature measurement point of each infrared temperature measurement unit corresponds to a different position on the radial surface of the wafer.

[0009] In the MPCVD equipment provided in this embodiment of the invention, a plurality of infrared temperature measurement units are equally spaced along the radial straight line of the spray plate.

[0010] In the MPCVD equipment provided in this embodiment of the invention, the infrared temperature measurement unit is embedded in the lower surface of the spray plate, and a light-transmitting insulating layer is provided on the lower surface of the spray plate at the location where the infrared temperature measurement unit is embedded. The infrared temperature measurement unit is located below the light-transmitting insulating layer, and the light-transmitting insulating layer supports the transmission of infrared light.

[0011] In the MPCVD equipment provided in this embodiment of the invention, the lower surface of the spray plate is provided with a plurality of spray holes for outputting process gas, and the infrared temperature measurement unit is disposed in the gap between the spray holes.

[0012] In the MPCVD equipment provided in this embodiment of the invention, the carrier stage is rotatably arranged, and the temperature measuring mechanism further includes a second driving component. The second driving component is located at the bottom of the cavity and connected to the carrier stage, and is used to drive the carrier stage to rotate the wafer around its own axis. When the carrier stage rotates, the surface of the wafer moves relative to the temperature measuring point of the infrared temperature measuring array. The control module is connected to the second driving component to control the driving action of the second driving component.

[0013] In the MPCVD equipment provided in this embodiment of the invention, the second drive component includes a first motor, which is fixed to the bottom of the cavity and its shaft is connected to the bottom of the support platform.

[0014] In the MPCVD equipment provided in this embodiment of the invention, the first drive component includes a second motor, the second motor is fixed to the top of the cavity, and the rotating shaft of the second motor is connected to the top of the spray plate.

[0015] In a second aspect, embodiments of the present invention provide a process control method for an MPCVD equipment. The method is applied to the MPCVD equipment of the first aspect. The method includes: controlling the rotation of the spray plate and / or the support stage; acquiring the rotation angle of the spray plate and / or the support stage, and acquiring temperature data of the wafer surface detected by the infrared temperature measurement array; obtaining temperature distribution information of the wafer surface based on the rotation angle and the temperature data; and adjusting the process parameters of the MPCVD equipment based on the temperature distribution information, wherein the process parameters include at least one of microwave power, cavity gas pressure, and process gas flow rate.

[0016] The MPCVD equipment of this invention, by setting an infrared temperature measurement array on the lower surface of the spray plate and using a first driving component to drive the spray plate to rotate around its axis, enables the temperature measurement points of the infrared temperature measurement array to simultaneously scan along the circumference of the wafer, achieving continuous multi-point measurement of radial and circumferential temperature parameters of the wafer surface, effectively improving the temperature measurement coverage and temperature field characterization accuracy. This equipment requires no additional support structure inside the cavity and does not affect the microwave field distribution inside the cavity. Simultaneously, the control module can use the collected temperature distribution information as feedback input to adjust the process parameters of the MPCVD equipment, dynamically compensating and balancing the wafer surface temperature from both heat source distribution and gas mass transfer perspectives, thereby effectively ensuring that the wafer surface maintains uniformity and stability of temperature distribution throughout the process. Attached Figure Description

[0017] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a cross-sectional structural diagram of an MPCVD device provided in an embodiment of the present invention; Figure 2 This is a top view of the cavity of an MPCVD device provided in an embodiment of the present invention; Figure 3 This is a schematic diagram of the lower surface structure of the spray plate of the MPCVD equipment provided in an embodiment of the present invention; Figure 4 A flowchart illustrating the steps of the method provided in an embodiment of the present invention.

[0019] The labels for the attached figures are as follows: 10. Cavity; 20. Support platform; 30. Spray plate; 301. Spray hole; 40. Temperature measuring mechanism; 41. First drive assembly; 411. Second motor; 401. Temperature measuring point; 42. Infrared temperature measuring array; 421. Infrared temperature measuring unit; 43. Second drive assembly; 431. First motor; 100. Wafer. Detailed Implementation

[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] The directional terms used in this invention, such as "up," "down," "front," "back," "left," "right," "inner," "outer," and "side," are merely for reference to the accompanying drawings. Therefore, the directional terms used are for illustrating and understanding this invention, and not for limiting it. Furthermore, in the drawings, structures that are similar or identical are indicated by the same reference numerals.

[0022] Please see Figures 1 to 3 The present invention provides an MPCVD device, which includes: a cavity 10, a support stage 20, a spray plate 30, and a temperature measuring mechanism 40. The support platform 20 is rotatably disposed within the cavity 10 for supporting the wafer 100; the spray plate 30 is rotatably disposed within the cavity 10 and above the support platform 20 for spraying process gas onto the surface of the wafer 100; the temperature measuring mechanism 40 includes a control module, a first driving component 41, and an infrared temperature measuring array 42; the infrared temperature measuring array 42 is disposed on the lower surface of the spray plate 30 with temperature measuring points 401 corresponding to the radial surface of the wafer 100, for detecting the temperature parameters of the wafer 100 surface; the first driving component 41 is disposed on the top of the cavity 10 and connected to the spray plate 30, for driving the spray plate 30 to rotate around its axis, so that the temperature measuring points 401 of the infrared temperature measuring array 42 move along the circumference of the wafer 100; the control module is connected to the first driving component 41 and the infrared temperature measuring array 42, for controlling the driving action of the first driving component 41 and receiving and processing the temperature parameters.

[0023] In specific implementation, see Figure 1 , Figure 2 and Figure 3The MPCVD equipment includes a chamber 10, a stage 20, a spray plate 30, and a temperature measuring mechanism 40. The chamber 10 is the main reaction chamber of the MPCVD equipment. The chamber 10 is made entirely of high-temperature resistant and corrosion-resistant metal or quartz material. The side walls of the chamber 10 are equipped with a microwave feed inlet and a vacuum vent, used to feed energy generated by an external microwave source into the chamber 10 to excite plasma and to maintain the required vacuum process pressure environment inside the chamber 10, respectively.

[0024] The support platform 20 is fixedly installed at the bottom of the cavity 10. The upper surface of the support platform 20 is a precision-machined flat plane used to stably support the wafer 100 to be processed. During the process, the support platform 20 remains fixed, providing a stable support reference for the wafer 100. After the wafer 100 is placed on the support platform 20, the plane on which its surface lies is parallel to the lower surface of the spray plate 30.

[0025] The spray plate 30 is located directly above and parallel to the support platform 20. The spray plate 30 is integrally formed from a non-metallic insulating material to avoid adverse interference with the microwave electric field and plasma distribution within the cavity 10. An equalizing chamber 10 is provided inside the spray plate 30. After the process gas enters the equalizing chamber from the top of the spray plate 30, it is buffered and pressure equalized before being uniformly discharged from the bottom of the spray plate 30 towards the wafer 100. The spray plate 30 is synchronously connected to the first drive assembly 41 located at the top of the cavity 10 via a central shaft connector. This central shaft connector passes through a dynamic sealing mechanism at the top of the cavity 10, allowing for rotational freedom while ensuring the cavity 10 remains sealed.

[0026] The temperature measuring mechanism 40 is located inside the cavity 10 and works in conjunction with the spray plate 30. Specifically, the temperature measuring mechanism 40 includes a control module, a first drive component 41, and an infrared temperature measuring array 42. The control module can be a host computer or a controller built into the device, used to perform tasks such as data acquisition, data processing, and device operation control. The control module is connected to the first drive component 41 and the infrared temperature measuring array 42, and is used to receive and process the temperature parameters detected by the infrared temperature measuring array 42, and send control commands to the first drive component 41 to drive the spray plate 30 to rotate at a preset angular velocity or angle.

[0027] The infrared temperature measurement array 42 is fixed to the lower surface of the spray plate 30. The infrared temperature measurement array 42 is a sensor array structure with multiple independent detection ends. These detection ends collect infrared radiation signals facing the surface of the wafer 100, forming temperature measurement points 401 on the surface of the wafer 100. The temperature measurement points 401 are arranged spatially along the radial direction of the wafer 100, enabling the device to acquire real-time temperature data at multiple different locations along the radial direction on the surface of the wafer 100 under static conditions.

[0028] The first driving component 41 is fixedly installed on the top of the cavity 10 and is used to drive the spray plate 30 to rotate around its own axis, which is controlled by the control module. The first driving component 41 can be driven by an independent motor or by a combination of a motor and a transmission structure. In actual operation, the first driving component 41 drives the spray plate 30 to rotate continuously around the central axis according to the control commands issued by the control module. When the spray plate 30 rotates continuously around the central axis, the infrared temperature measurement array 42 fixed on the lower surface of the spray plate 30 rotates synchronously with the spray plate 30. The various temperature measurement points 401 originally arranged radially along the wafer 100 are moved in space and synchronously scanned along the circumference of the wafer 100, thereby realizing temperature detection of the fan-shaped area or the circular area. For example, when the rotation angle of the spray plate 30 is less than 360 degrees, the temperature data of the fan-shaped surface area of ​​the wafer 100 can be obtained; when the rotation angle of the spray plate 30 is greater than or equal to 360 degrees, the temperature data of the entire circular surface of the wafer 100 can be obtained. In practical applications, the appropriate control scheme for the spray plate 30 can be selected according to the temperature detection requirements. The first drive component 41 can also feed back the current rotation angle to the control module, which can be achieved through the encoder of the motor. The temperature data of any point on the surface of the wafer 100 can be correlated with the current rotation angle, the radial distance of the temperature measuring point 401, and the measured temperature value at that moment.

[0029] After acquiring and processing the temperature parameters of the wafer 100 surface, the control module can use these parameters for equipment process control. Based on the relationship between temperature and process control requirements, it outputs adjustment commands to regulate the MPCVD equipment's process parameters, such as microwave power, cavity 10 pressure, and process gas flow rate. Through coordinated adjustment of temperature and process parameters, dynamic compensation and balance of the wafer 100 surface temperature can be achieved simultaneously from both heat source distribution and gas mass transfer perspectives, effectively ensuring that the wafer 100 surface maintains uniform and stable temperature distribution throughout the process.

[0030] In this embodiment, by placing the infrared temperature measurement array 42 on the lower surface of the spray plate 30 and cooperating with the first driving component 41 to drive the spray plate 30 to rotate, the rotation of the spray plate 30 drives the temperature measurement point 401 to scan along the circumference of the wafer 100, thereby realizing continuous multi-point measurement of the radial and circumferential temperature parameters of the wafer 100 surface. This effectively improves the temperature measurement coverage and temperature field characterization accuracy, and eliminates the need for additional support structures inside the cavity 10, thus not affecting the microwave field distribution inside the cavity 10.

[0031] In one embodiment, see Figure 2 and Figure 3The infrared temperature measurement array 42 includes a plurality of infrared temperature measurement units 421 distributed radially along the spray plate 30, and the temperature measurement point 401 of each infrared temperature measurement unit 421 corresponds to a different position on the radial surface of the wafer 100.

[0032] In specific implementation, the infrared temperature measurement array 42 consists of multiple independent infrared temperature measurement units 421, which are arranged sequentially along the radial direction of the spray plate 30 on the lower surface of the spray plate 30. The infrared temperature measurement unit 421 can specifically be an infrared sensor. Since the radial direction of the spray plate 30 corresponds spatially to the radial direction of the wafer 100, each infrared temperature measurement unit 421 forms a corresponding temperature measurement point 401 on the surface of the wafer 100 directly below it. Adjacent infrared temperature measurement units 421 maintain a certain radial spacing, allowing each temperature measurement point 401 to cover different radial positions on the surface of the wafer 100 from the center to the edge. Therefore, the infrared temperature measurement array 42 can simultaneously acquire temperature parameters at multiple different positions along the radial direction on the surface of the wafer 100, providing a radial temperature distribution data basis for subsequent circumferential scanning temperature measurement.

[0033] In one embodiment, see Figure 3 Multiple infrared temperature measuring units 421 are equally spaced along the radial direction of the spray plate 30.

[0034] In specific implementation, the infrared temperature measuring units 421 in the infrared temperature measuring array 42 are arranged sequentially along the same radial straight line of the spray plate 30, and the spacing between two adjacent infrared temperature measuring units 421 remains equal. The infrared temperature measuring units 421 are evenly distributed along the radial straight line of the spray plate 30 at the same spacing, ensuring that the radial positions of the wafer 100 surface corresponding to each temperature measuring point 401 also maintain the same spacing. By arranging the infrared temperature measuring units 421 at equal intervals along the radial straight line of the spray plate 30, a uniform spacing can be maintained between the temperature measuring points 401 in the radial direction of the wafer 100 surface. The temperature data collected by each temperature measuring point 401 has a consistent density and distribution pattern in the radial direction, which is beneficial for subsequent accurate data fitting of the radial temperature distribution on the wafer 100 surface.

[0035] In one embodiment, see Figure 3 The infrared temperature measuring unit 421 is embedded in the lower surface of the spray plate 30. A light-transmitting insulating layer (not shown) is provided on the lower surface of the spray plate 30 at the location where the infrared temperature measuring unit 421 is embedded. The infrared temperature measuring unit 421 is located under the light-transmitting insulating layer, which supports the transmission of infrared light.

[0036] In a specific implementation, the lower surface of the spray plate 30 is provided with a mounting groove or mounting hole for accommodating the infrared temperature measuring unit 421. The infrared temperature measuring unit 421 is embedded and fixed in the mounting groove or mounting hole, with its detection end facing the surface of the wafer 100. The lower surface of the spray plate 30 is covered with a light-transmitting insulating layer at the opening of the mounting groove or mounting hole. The light-transmitting insulating layer can be made of a material that transmits infrared light, such as quartz glass or infrared-transmitting ceramic. It can both allow the infrared light radiated from the surface of the wafer 100 to penetrate and reach the detection end of the infrared temperature measuring unit 421, and physically isolate the infrared temperature measuring unit 421 from the microwave plasma environment inside the cavity 10, so as to avoid electromagnetic interference from the microwave electric field inside the cavity 10 to the circuit of the infrared temperature measuring unit 421.

[0037] The light-transparent insulating layer is tightly bonded to the edge of the mounting groove of the spray plate 30 using high-temperature resistant sealant or a sealing ring, forming a sealed structure. This sealing structure effectively prevents process gases inside the cavity 10 from seeping into the infrared temperature measurement unit 421 through the opening of the mounting groove, avoiding contamination of the infrared temperature measurement unit 421 or a decrease in measurement accuracy due to gas infiltration. The detection end of the infrared temperature measurement unit 421 receives infrared radiation signals from the surface of the wafer 100 through the light-transparent insulating layer. By converting the infrared radiation intensity into an electrical signal output, it achieves accurate measurement of the surface temperature of the wafer 100. By embedding the infrared temperature measurement unit 421 in the lower surface of the spray plate 30 and providing a light-transparent insulating layer, the infrared temperature measurement unit 421 is completely enclosed inside the spray plate 30, eliminating the need for an additional independent temperature measurement bracket inside the cavity 10 and avoiding the introduction of metal components inside the cavity 10 that could adversely interfere with the microwave plasma distribution. Meanwhile, the transparent insulating layer ensures the normal transmission of infrared light and achieves electrical isolation between the microwave plasma and the temperature measurement circuit, thus ensuring the reliable operation and long-term stability of the temperature measurement system.

[0038] In one embodiment, see Figure 3 The lower surface of the spray plate 30 is provided with a plurality of spray holes 301 for outputting process gas, and the infrared temperature measuring unit 421 is disposed in the gap between the spray holes 301.

[0039] In specific implementation, multiple spray holes 301 are evenly distributed on the lower surface of the spray plate 30. Each spray hole 301 is connected to the pressure equalization chamber inside the spray plate 30. The process gas is buffered by the pressure equalization chamber and then sprayed out from the spray holes 301 toward the surface of the wafer 100, forming a uniform airflow distribution on the surface of the wafer 100. The gap area between the spray holes 301 is the non-opening area, that is, the part of the lower surface of the spray plate 30 where no spray holes 301 are provided. The infrared temperature measurement unit 421 is disposed in the gap between the spray holes 301, with its detection end facing the surface of the wafer 100, and is used to receive the infrared radiation signal from the surface of the wafer 100. The infrared temperature measurement unit 421 is embedded in the material of the spray plate 30, with only its detection end exposed in the gap between the spray holes 301, maintaining a spatially staggered arrangement with the spray holes 301.

[0040] By placing the infrared temperature measuring unit 421 within the gaps between the spray holes 301, the infrared temperature measuring unit 421 does not require additional space or a separate support structure outside the spray plate 30. The infrared temperature measuring unit 421 and the spray holes 301 form an alternating distribution on the lower surface of the spray plate 30, ensuring that the spray holes 301 can uniformly spray process gas according to the designed spacing, while also ensuring that the infrared temperature measuring unit 421 can perform multi-point temperature measurements on the surface of the wafer 100 without interference. Furthermore, since the infrared temperature measuring unit 421 is embedded within the material of the spray plate 30 and located in a non-perforated area, the non-metallic insulating material of the spray plate 30 itself can physically protect the infrared temperature measuring unit 421, preventing direct interference from microwave plasma to the temperature measuring circuit.

[0041] In one embodiment, see Figure 1 The support platform 20 is rotatably mounted. The temperature measuring mechanism 40 further includes a second driving component 43, which is located at the bottom of the cavity 10 and connected to the support platform 20. It is used to drive the support platform 20 to rotate the wafer 100 around its own axis. When the support platform 20 rotates, the surface of the wafer 100 moves relative to the temperature measuring point 401 of the infrared temperature measuring array 42. The control module is connected to the second driving component 43 to control the driving action of the second driving component 43.

[0042] In specific implementation, the support platform 20 is no longer fixedly installed at the bottom of the cavity 10, but is rotatably mounted at the bottom of the cavity 10. The support platform 20 is connected to the bottom of the cavity 10 via bearings or a rotating support structure, and can rotate freely around its own axis at the bottom of the cavity 10. The second drive assembly 43 is located on the outer or inner side of the bottom of the cavity 10, and its power output end is connected to the bottom of the support platform 20 for driving the support platform 20 to rotate around its own axis. The second drive assembly 43 can be driven by a separate motor, or it can be driven by a combination of a motor and a transmission structure. Under the drive of the second drive assembly 43, the support platform 20 drives the wafer 100 on it to rotate synchronously. When the wafer 100 rotates with the support stage 20, the surface of the wafer 100 moves relative to the temperature measurement points 401 of the infrared temperature measurement array 42 fixed on the lower surface of the spray plate 30. This causes the temperature measurement points 401, which were originally distributed radially along the wafer 100, to scan the circumference of the wafer 100 in space, thereby realizing the temperature measurement of the surface of the wafer 100 at different angles.

[0043] The control module is electrically connected to the second drive component 43 and sends control commands to the second drive component 43 to drive the carrier platform 20 to rotate at a preset angular velocity or angle. During actual operation, the control module can select different operating modes according to temperature measurement requirements. When it is necessary to quickly obtain the circumferential temperature distribution on the surface of wafer 100, the carrier platform 20 can be driven to continuously rotate wafer 100, and the temperature measurement points 401 of the infrared temperature measurement array 42 can synchronously scan along the circumference of wafer 100, achieving continuous acquisition of circumferential temperature data on the surface of wafer 100. When it is necessary to accurately measure the temperature at a certain angle on the surface of wafer 100, the carrier platform 20 can be controlled to rotate to a specified angle and then stop, and the infrared temperature measurement array 42 can collect temperature data at different positions along the radial direction at that angle. The rotation scheme of the carrier platform 20 can be used independently of the rotation scheme of the spray plate 30, or the two can be used in conjunction. When the carrier platform 20 rotates and the spray plate 30 rotates simultaneously, the relative motion between the surface of the wafer 100 and the infrared temperature measurement array 42 is the superposition of their rotational motions, which can complete the temperature scanning measurement of the entire surface of the wafer 100 in a shorter time, further improving the temperature field acquisition efficiency.

[0044] Further, see Figure 1 The second drive component 43 includes a first motor 431, which is fixed to the bottom of the cavity 10 and its shaft is connected to the bottom of the support platform 20.

[0045] In specific implementation, the second drive assembly 43 uses the first motor 431 as its power source. The first motor 431 is fixedly mounted on a mounting bracket on the outer or inner side of the bottom of the cavity 10. The shaft of the first motor 431 passes through the bottom of the cavity 10 via bearings and a sealing structure, and enters the cavity 10, where it is connected to the bottom of the support platform 20. This connection can be direct, where the shaft of the first motor 431 is fixedly connected to the center of the bottom of the support platform 20, and the motor directly drives the support platform 20 to rotate; or it can be indirect, where the shaft of the first motor 431 is connected to the bottom of the support platform 20 via a transmission mechanism (such as gear drive, belt drive, or coupling) to adjust the speed and torque. In actual assembly, the first motor 431 can be a servo motor or a stepper motor to ensure precise control of the rotation angle of the support platform 20. The control module is electrically connected to the first motor 431, sending drive commands to the first motor 431 to drive the support platform 20 to rotate at a preset speed and direction. To ensure the stability of the support platform 20 during rotation, a support bearing is provided at the bottom of the support platform 20, allowing the support platform 20 to rotate freely and stably around its axis at the bottom of the cavity 10. By setting a first motor 431 at the bottom of the cavity 10 and connecting it to the support platform 20 for transmission, an independent and controllable power source is provided for the rotational movement of the support platform 20.

[0046] In one embodiment, see Figure 1 The first drive assembly 41 includes a second motor 411, which is fixed to the top of the cavity 10, and the shaft of the second motor 411 is connected to the top of the spray plate 30.

[0047] In specific implementation, the first drive assembly 41 uses the second motor 411 as its power source. The second motor 411 is fixedly installed on the top outer side of the cavity 10. The rotating shaft of the second motor 411 passes through the dynamic sealing structure (such as a magnetohydrodynamic seal or a bellows seal) at the top of the cavity 10 and enters the cavity 10, and is connected to the top center of the spray plate 30. The dynamic sealing structure allows the rotating shaft to rotate freely inside the cavity 10 while ensuring the airtightness of the cavity 10 during rotation. The rotating shaft of the second motor 411 can be directly fixed to the top of the spray plate 30 through couplings, keyway connections, or flange connections, so that the rotational motion output by the second motor 411 is directly transmitted to the spray plate 30. The second motor 411 can be a servo motor or a stepper motor to provide precise speed control and angle positioning. The control module is electrically connected to the second motor 411 and sends rotation commands to the second motor 411 according to process requirements, driving the spray plate 30 to rotate at a preset angular velocity or angle. In practical applications, the speed and direction of rotation of the second motor 411 can be dynamically adjusted according to temperature measurement requirements to achieve circumferential scanning at different speeds. By setting the first drive assembly 41 as the second motor 411 and fixing it to the top of the cavity 10, an independent and controllable power source is provided for the rotational movement of the spray plate 30.

[0048] In summary, the MPCVD equipment of this invention sets an infrared temperature measurement array on the lower surface of the spray plate and uses a first driving component to drive the spray plate to rotate around its axis, so that the temperature measurement points of the infrared temperature measurement array can be scanned synchronously along the circumferential direction on the wafer surface. This enables continuous multi-point measurement of radial and circumferential temperature parameters on the wafer surface, effectively improving the temperature measurement coverage and temperature field characterization accuracy.

[0049] Please see Figure 4 The present invention also provides a process control method for an MPCVD equipment, the method being applied to the MPCVD equipment described in the above embodiments. Figure 4 As shown, the method specifically includes the following steps S110-S140.

[0050] S110, Control the rotation of the spray plate and / or the support platform.

[0051] In practice, the control module sends rotation control commands to the first and / or second drive components according to the preset temperature measurement process requirements. When the spray plate needs to rotate independently, the control module sends a control signal to the first drive component, causing it to drive the spray plate to rotate around its own axis at a set speed. When the carrier platform needs to rotate independently, the control module sends a control signal to the second drive component, causing it to drive the carrier platform to rotate the wafer around its own axis. The spray plate and the carrier platform can rotate independently or simultaneously. The specific rotation method is determined according to the actual temperature measurement requirements. For example, when it is necessary to quickly obtain the overall temperature distribution of the wafer surface, a continuous rotation of the spray plate can be used; when it is necessary to obtain temperature information within a specific angle range, a step-by-step rotation of the carrier platform can be used.

[0052] S120. Obtain the rotation angle of the spray plate and / or the support platform, and obtain the temperature data of the wafer surface detected by the infrared temperature measurement array.

[0053] In practice, during the rotation of the spray plate and / or the support platform, the control module acquires the rotation angle information fed back by the first drive component and / or the second drive component in real time. The first drive component is equipped with a position detection unit (such as the encoder of the second motor) to detect the current rotation angle of the spray plate in real time and transmits this angle signal to the control module. Similarly, the second drive component is equipped with a position detection unit (such as the encoder of the first motor) to detect the current rotation angle of the support platform in real time and transmits this angle signal to the control module. Simultaneously, the control module continuously receives temperature detection signals output from each temperature measurement point in the infrared temperature measurement array. These temperature detection signals reflect the real-time temperature at different temperature measurement point locations on the wafer surface. Each temperature measurement point in the infrared temperature measurement array continuously collects temperature data according to a preset sampling frequency and transmits the collected temperature data to the control module in real time. The control module performs signal conditioning, filtering, and digitization processing on the received temperature data to obtain accurate and reliable temperature data.

[0054] S130. Based on the rotation angle and the temperature data, obtain the temperature distribution information of the wafer surface.

[0055] In practice, the control module performs coordinate mapping and data processing based on the real-time rotation angle feedback from the first and / or second drive components, combined with the radial position information of each temperature measuring point on the lower surface of the spray plate, and the temperature data collected at the current moment by each temperature measuring point. The control module then performs correspondence and interpolation processing on the temperature values ​​detected by each temperature measuring point at different rotation angles according to their actual spatial positions on the wafer surface, thereby calculating the temperature value at each location on the wafer surface. Through this processing, the control module can reconstruct the radial and circumferential temperature distribution information of the wafer surface, which can be represented as a two-dimensional temperature field distribution map or a radial and circumferential temperature curve. The obtained temperature distribution information serves as the temperature control input for the MPCVD equipment, enabling fine-tuning of process parameters.

[0056] In one embodiment, the temperature distribution information includes radial temperature distribution information and circumferential temperature distribution information.

[0057] In practice, the radial temperature distribution information reflects the temperature variation pattern at different locations along the radial direction of the wafer surface. When the spray plate and / or support platform are stationary, temperature data at corresponding radial locations on the wafer surface are simultaneously collected by various temperature measurement points distributed radially along the spray plate in the infrared temperature measurement array, forming a set of discrete temperature values ​​distributed along the wafer radius. This radial temperature distribution information characterizes the temperature gradient from the center to the edge of the wafer surface in the same angular direction, and can be used to determine the radial temperature uniformity of the wafer surface and the edge temperature compensation requirements.

[0058] The circumferential temperature distribution information reflects the temperature variation pattern at different angular positions along the circumference of the wafer surface. When the control module drives the spray plate and / or the support platform to rotate, each temperature measuring point moves circumferentially at its corresponding position on the wafer surface. As the rotation angle continuously changes, the temperature measuring points sequentially sweep across different angular regions of the wafer surface, thereby collecting temperature data at different angular positions. The control module categorizes and integrates the collected temperature data according to their corresponding angular positions to form a temperature distribution curve along the wafer circumference, which is used to evaluate the circumferential temperature uniformity of the wafer surface.

[0059] The radial and circumferential temperature distribution information, when combined, constitute a complete two-dimensional temperature field distribution on the wafer surface. Through comprehensive analysis of these two types of information, the control module can fully grasp the actual temperature state of each region on the wafer surface, providing a complete data foundation for the precise adjustment of subsequent process parameters.

[0060] S140. Adjust the process parameters of the MPCVD equipment according to the temperature distribution information, wherein the process parameters include at least one of microwave power, cavity pressure and process gas flow rate.

[0061] In practice, the control module uses the temperature distribution information of the wafer surface as feedback input and compares it in real time with the preset process temperature setpoint. When a local temperature deviation from the target temperature range is detected on the wafer surface, the control module calculates the temperature deviation based on the preset process control logic and outputs corresponding adjustment commands to adjust the process parameters of the MPCVD equipment. The process parameters of the MPCVD equipment include at least one of microwave power, cavity pressure, and process gas flow rate. For example, when the temperature of a certain area on the wafer surface is too low, the control module can increase the microwave power to increase the energy density of the plasma in the cavity, thereby increasing the heating intensity of that area; when the overall temperature of the wafer surface is too high, the control module can appropriately reduce the microwave power or increase the cavity pressure to adjust the plasma distribution; when the temperature distribution on the wafer surface is uneven, the control module can adjust the process gas flow rate to change the concentration field and flow velocity field of the gas sprayed onto the wafer surface by the spray plate, thereby improving the heat transfer uniformity of the wafer surface. The control module adjusts the combination of the above process parameters in real time according to the dynamic changes in temperature distribution information to ensure that the wafer surface maintains temperature uniformity and stability throughout the process.

[0062] In summary, the method of this application obtains the temperature distribution information of the wafer surface by controlling the rotation of the spray plate and / or the support stage, and combining the rotation angle and temperature data. This enables the control module to dynamically adjust the process parameters based on the real-time temperature distribution, realizing closed-loop feedback control of the wafer surface temperature during the MPCVD process. This effectively improves the uniformity and consistency of the wafer surface temperature distribution, and enhances the quality and process repeatability of thin film deposition.

[0063] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. An MPCVD device, characterized in that, include: cavity; A support stage, located within the cavity, is used to support the wafer; A spray plate is rotatably disposed in the cavity and above the support platform for spraying process gases onto the surface of the wafer; The temperature measuring mechanism includes a control module, a first drive component, and an infrared temperature measuring array; The infrared temperature measurement array is located on the lower surface of the spray plate and the temperature measurement points correspond to the radial surface of the wafer, and is used to detect the temperature parameters of the wafer surface. The first driving component is located at the top of the cavity and connected to the spray plate, and is used to drive the spray plate to rotate around its axis so that the temperature measuring point of the infrared temperature measuring array moves along the circumference of the wafer. The control module connects the first driving component and the infrared temperature measurement array, and is used to control the driving action of the first driving component and receive and process the temperature parameters.

2. The MPCVD equipment according to claim 1, characterized in that, The infrared temperature measurement array includes multiple infrared temperature measurement units distributed radially along the spray plate, and the temperature measurement point of each infrared temperature measurement unit corresponds to a different position on the radial surface of the wafer.

3. The MPCVD equipment according to claim 2, characterized in that, Multiple infrared temperature measuring units are evenly spaced along the radial direction of the spray plate.

4. The MPCVD equipment according to claim 2, characterized in that, The infrared temperature measuring unit is embedded in the lower surface of the spray plate. A light-transmitting insulating layer is provided on the lower surface of the spray plate at the location where the infrared temperature measuring unit is embedded. The infrared temperature measuring unit is located below the light-transmitting insulating layer, which supports the transmission of infrared light.

5. The MPCVD equipment according to claim 2, characterized in that, The lower surface of the spray plate is provided with multiple spray holes for outputting process gas, and the infrared temperature measuring unit is located in the gap between the spray holes.

6. The MPCVD apparatus according to any one of claims 1 to 5, characterized in that, The support platform is rotatably mounted. The temperature measuring mechanism further includes a second driving component, which is located at the bottom of the cavity and connected to the support platform. The second driving component is used to drive the support platform to rotate the wafer around its own axis. When the support platform rotates, the surface of the wafer moves relative to the temperature measuring point of the infrared temperature measuring array. The control module is connected to the second driving component to control the driving action of the second driving component.

7. The MPCVD equipment according to claim 6, characterized in that, The second drive component includes a first motor, which is fixed to the bottom of the cavity and its shaft is connected to the bottom of the support platform.

8. The MPCVD apparatus according to any one of claims 1 to 5, characterized in that, The first drive assembly includes a second motor, which is fixed to the top of the cavity, and the shaft of the second motor is connected to the top of the spray plate.

9. A process control method for an MPCVD equipment, characterized in that, Applied to the MPCVD apparatus according to any one of claims 1 to 8, the method comprises: Control the rotation of the spray plate and / or the support platform; Obtain the rotation angle of the spray plate and / or the support platform, and obtain the temperature data of the wafer surface detected by the infrared temperature measurement array; Based on the rotation angle and the temperature data, the temperature distribution information of the wafer surface is obtained; Based on the temperature distribution information, the process parameters of the MPCVD equipment are adjusted, wherein the process parameters include at least one of microwave power, cavity gas pressure, and process gas flow rate.

10. The method according to claim 9, characterized in that, The temperature distribution information includes radial temperature distribution information and circumferential temperature distribution information.

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