A temperature jump diagnostic method, system, device and computer storage medium

Abstract

The application discloses a temperature jump diagnosis method, system, device and computer storage medium, relates to the technical field of battery management system hardware-in-the-loop test, and responds to temperature jump of a battery management system device. Then, internal communication link data of the battery management system device and a first resistance value at the time of temperature jump are acquired. A second resistance value is acquired. The second resistance value is a resistance value input by a temperature simulation tool to the battery management system device before temperature jump. A target resistance value referenced by the temperature simulation tool for generating the second resistance value is acquired. A first deviation value between the second resistance value and the target resistance value is generated. A second deviation value between the first resistance value and the second resistance value is generated. The first deviation value, the second deviation value and the internal communication link data are analyzed to obtain a fault reason of the temperature jump of the battery management system device. The application automatically locates the fault reason by using the deviation analysis between the three resistance values and the internal communication link data, and improves fault troubleshooting efficiency.

Description

Technical Field

[0001] This application relates to the field of hardware-in-the-loop testing technology for battery management systems, and more specifically, to a method, system, device, and computer storage medium for diagnosing temperature jumps. Background Technology

[0002] In hardware-in-the-loop (HIL) testing of a new energy battery management system (BMS), temperature acquisition is a crucial step in verifying the battery safety protection logic. The test typically uses a programmable temperature simulation fixture to output the resistance value of a negative temperature coefficient (NTC) thermistor, simulating temperature changes at various measurement points within the battery pack, thereby verifying the BMS's temperature acquisition function.

[0003] However, during long-term stress testing, the temperature sampling signal frequently exhibits sporadic, short-duration instantaneous jumps. These jumps are not actual temperature changes, have complex causes, and are difficult to capture due to their short duration and irregular triggering. Currently, testers often use methods such as analyzing CAN (Controller Area Network) logs after long-term stress testing to discover anomalies, or troubleshooting by replacing components one by one. The former method can only identify problems but cannot pinpoint the root cause, while the latter method relies on manual experience and takes hours or even days, severely delaying project progress.

[0004] In conclusion, improving the efficiency of troubleshooting temperature jump faults in battery management system equipment is a problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] The purpose of this application is to provide a temperature jump diagnostic method, which can, to some extent, solve the technical problem of how to improve the efficiency of troubleshooting temperature jump faults in battery management system devices. This application also provides a temperature jump diagnostic system, electronic device, and computer-readable storage medium.

[0006] To achieve the above objectives, this application provides the following technical solution: A method for diagnosing temperature jumps includes: In response to a temperature jump in the battery management system device, the internal communication link data of the battery management system device and the first resistance value at the time of the temperature jump are obtained. Obtain the second resistance value, which is the resistance value input by the temperature simulation fixture to the battery management system device before the temperature jump; Obtain the target resistance value input to the temperature simulation fixture, wherein the target resistance value is the resistance value referenced for generating the second resistance value; Generate a first deviation value between the second resistance value and the target resistance value; Generate a second deviation value between the first resistance value and the second resistance value; By analyzing the first deviation value, the second deviation value, and the internal communication link data, the cause of the temperature jump in the battery management system device is obtained.

[0007] Preferably, the first deviation value, the second deviation value, and the internal communication link data are analyzed to determine the cause of the temperature jump in the battery management system device, including: If the first deviation value is greater than the first preset threshold, the cause of the temperature jump in the battery management system equipment is determined to be a tooling output fault.

[0008] Preferably, the first deviation value, the second deviation value, and the internal communication link data are analyzed to determine the cause of the temperature jump in the battery management system device, including: If the first deviation value is less than or equal to the first preset threshold and the second deviation value is greater than the second preset threshold, then the cause of the temperature jump in the battery management system device is determined to be a temperature acquisition link failure.

[0009] Preferably, the first deviation value, the second deviation value, and the internal communication link data are analyzed to determine the cause of the temperature jump in the battery management system device, including: If the first deviation value is less than or equal to a first preset threshold, the second deviation value is less than or equal to a second preset threshold, and there is a communication error in the internal communication link data, then the cause of the temperature jump in the battery management system device is determined to be communication link interference.

[0010] Preferably, a second resistance value is obtained, wherein the second resistance value is the resistance value input by the temperature simulation fixture to the battery management system device before the temperature jump, including: Historical resistance data is obtained from the ring buffer after the analog-to-digital converter acquisition device acquires and stores the resistance value output by the temperature simulation fixture. In the historical resistance data, the resistance value whose acquisition time matches the temperature jump time is used as the second resistance value.

[0011] Preferred options also include: In response to a temperature jump in the battery management system equipment, the analog-to-digital converter data acquisition device will trigger an alarm.

[0012] Preferably, after analyzing the first deviation value, the second deviation value, and the internal communication link data to obtain the cause of the temperature jump in the battery management system device, the method further includes: Determine the timing information of temperature jumps in battery management system devices; Based on the causes of the faults, troubleshooting suggestions for the battery management system equipment are generated. Based on the time information, the first resistance value, the second resistance value, the target resistance value, the cause of the fault, and the troubleshooting suggestions, an analysis report on the temperature jump of the battery management system device is generated.

[0013] A temperature jump diagnostic system, comprising: The first resistance value acquisition module is used to acquire the internal communication link data of the battery management system device and the first resistance value at the time of the temperature jump in response to the temperature jump of the battery management system device. The second resistance value acquisition module is used to acquire a second resistance value, which is the resistance value input by the temperature simulation fixture to the battery management system device before the temperature jump. The target resistance value acquisition module is used to acquire the target resistance value input to the temperature simulation fixture, wherein the target resistance value is the resistance value referenced for generating the second resistance value; The first deviation value generation module is used to generate a first deviation value between the second resistance value and the target resistance value; The second deviation value generation module is used to generate a second deviation value between the first resistance value and the second resistance value; The fault analysis module is used to analyze the first deviation value, the second deviation value, and the internal communication link data to obtain the fault cause of temperature jump in the battery management system device.

[0014] An electronic device, comprising: Memory, used to store computer programs; A processor, used to implement the steps of any of the above-described temperature jump diagnosis methods when executing the computer program.

[0015] A computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of any of the above-described temperature jump diagnosis methods.

[0016] This application provides a temperature jump diagnosis method. In response to a temperature jump in a battery management system (BMS) device, the method acquires internal communication link data of the BMS device and a first resistance value after the temperature jump; acquires a second resistance value, which is the resistance value input to the BMS device by a temperature simulation fixture before the temperature jump; acquires a target resistance value input to the temperature simulation fixture, which is the resistance value referenced for generating the second resistance value; generates a first deviation value between the second resistance value and the target resistance value; generates a second deviation value between the first resistance value and the second resistance value; and analyzes the first deviation value, the second deviation value, and the internal communication link data to obtain the cause of the temperature jump in the BMS device. In this application, when a temperature jump occurs, multi-source data is constructed by acquiring the second resistance value input by the temperature simulation fixture before the jump, the first resistance value collected by the BMS after the jump, the internal communication link data, and the target resistance value referenced by the temperature simulation fixture. The method automatically locates the cause of the fault by analyzing the deviation between the three resistance values ​​and the internal communication link data, eliminating the need for manual replacement of components one by one, thus improving the efficiency of fault diagnosis. The temperature jump diagnostic system, electronic device, and computer-readable storage medium provided in this application also solve the corresponding technical problems. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0018] Figure 1 A flowchart illustrating a temperature jump diagnosis method provided in this application embodiment; Figure 2 This is a schematic diagram of the temperature detection system. Figure 3 This is a schematic diagram of the structure of a temperature jump diagnostic system provided in an embodiment of this application; Figure 4 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application; Figure 5 This is another structural schematic diagram of an electronic device provided in an embodiment of this application. Detailed Implementation

[0019] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0020] Please see Figure 1 , Figure 1 This is a flowchart of a temperature jump diagnosis method provided in an embodiment of this application.

[0021] This application provides a method for diagnosing temperature jumps, which may include the following steps: Step S101: In response to a temperature jump in the battery management system device, acquire the internal communication link data of the battery management system device and the first resistance value at the time of the temperature jump.

[0022] In practical applications, the Battery Management System (BMS) device is the object of test in Hardware-in-the-Loop (HIL) testing. The BMS device contains a temperature acquisition circuit that acquires resistance signals from a temperature simulation fixture through its temperature acquisition channels, converts the acquired resistance values ​​into corresponding temperature values, and reports them to a host computer via internal communication links such as the CAN bus. The host computer is configured with a script to execute the method described in this application, thereby diagnosing temperature jumps. A temperature jump refers to a change in the reported temperature value from the BMS device that exceeds the normal range within a very short period. During HIL testing, the temperature data reported by the BMS device can be monitored in real time, and jump detection can be performed independently for each temperature acquisition channel. When a temperature jump event is detected, the diagnostic process described in this application is immediately triggered.

[0023] It is understandable that the internal communication link data of the BMS device can include data related to the transmission quality of the communication link used to transmit temperature data within the BMS device. When the communication link is subject to electromagnetic interference or poor wiring contact, the quality of the internal communication link data will deteriorate. This can be characterized by a verification status parameter PEC (Packet Error Code). The value of PEC can represent the number of communication errors occurring per unit time, or the cumulative error count in continuous communication. The first resistance value refers to the actual resistance value collected and reported by the BMS device from the temperature simulation fixture through its temperature acquisition channel when a temperature jump occurs. It should be noted that the BMS device usually reports the temperature value directly rather than the resistance value. Therefore, the specific method to obtain the first resistance value can be: extract the temperature value from the temperature data reported by the BMS device when the temperature jump occurs, then convert the temperature value to the corresponding resistance value according to the preset NTC resistance value table, and use the converted resistance value as the first resistance value, denoted as Rbms. The NTC resistance value table is a pre-stored lookup table that records the standard resistance values ​​of NTC thermistors at various temperature points. For ease of understanding, let's assume that the temperature of the BMS device jumps from 25°C to 27°C. The resistance value corresponding to 27°C is the first resistance value.

[0024] In an exemplary embodiment, during the process of detecting whether a temperature jump event has occurred in the battery management system device, the temperature value T at the current sampling time can be calculated. i Temperature value T at the previous sampling time i-1 The difference ΔT between i =T i -T i-1 If |ΔT i | Greater than T th And the duration is greater than t th If T is positive, a temperature jump event is detected; otherwise, no temperature jump event is detected. th The preset rate of change threshold can be obtained by subtracting a certain redundancy from the BMS temperature difference alarm threshold, such as setting it to 3℃, etc. th The preset duration threshold can be determined based on the resistance sampling period and the BMS sampling period to filter out transient noise, such as setting it to 1 second.

[0025] Step S102: Obtain the second resistance value, which is the resistance value input by the temperature simulation fixture to the battery management system device before the temperature jump.

[0026] In practical applications, a temperature simulation fixture is a programmable temperature simulation device that internally contains a controllable resistor network or a digital potentiometer. It can output a corresponding resistance value according to issued commands, and its output terminal is connected to the temperature acquisition channel of the BMS device via a signal line, inputting a resistance signal to the BMS device. The second resistance value obtained in this application refers to the resistance value input by the temperature simulation fixture to the BMS device just before a temperature jump event occurs. This resistance value reflects the actual output state of the temperature simulation fixture before the temperature jump. For example, if the temperature of the BMS device jumps from 25°C to 27°C after the temperature simulation fixture inputs resistance value A to the BMS device, then resistance value A is the second resistance value.

[0027] In the exemplary embodiment, considering the long duration of hardware-in-the-loop testing and the potentially inaccurate timing of temperature jump detection, obtaining the second resistance value becomes problematic. To address this issue, the resistance value output by the temperature simulation fixture can be recorded to obtain the second resistance value when needed. For example, the resistance value output by the temperature simulation fixture can be stored using an analog-to-digital converter (ADC) acquisition device independent of the BMS device. Specifically, the ADC acquisition device is connected to the output of the temperature simulation fixture and continuously acquires the resistance value output by the temperature simulation fixture at a certain sampling period, storing the acquired data in a circular buffer. Sufficient acquisition time is required to ensure that the ADC acquisition device completes at least one complete sampling round. One round means acquiring the resistance value corresponding to all temperature points. For example, one round requires issuing 8 acquisition commands, with an interval of 300ms between each command. Thus, when a temperature jump occurs, the resistance value data acquired by the ADC acquisition device before the temperature jump, for example, within the sampling period preceding the temperature jump, can be read from the circular buffer and used as the second resistance value, denoted as Radc. In this way, since the ADC acquisition device has an independent power supply and sampling link, its acquisition results are not affected by the state of the BMS device's acquisition circuit. Therefore, the second resistance value can serve as an independent reference for judging whether the temperature simulation fixture output is accurate. During this process, to facilitate user awareness of temperature fluctuations in the BMS device, and in response to temperature fluctuations in the battery management system device, the analog-to-digital converter acquisition device can also be controlled to issue an alarm, such as through an audible alarm or a flashing light alarm.

[0028] It should be noted that the moment before the temperature jump refers to the moment before the temperature jump event occurs. Specifically, since the ADC acquisition device samples at a fixed period, when a temperature jump is detected at time t, the ADC sample value with the timestamp closest to but earlier than time t can be read from the circular buffer as the second resistance value. For example, the ADC value of the most recent complete sampling period can be read to ensure that the value truly reflects the output state of the temperature simulation fixture before the temperature jump occurs.

[0029] It should also be noted that a circular buffer is used because its size is preset, for example, to store the data of the most recent 10 seconds. No matter how long the test lasts, the storage space occupied by the buffer remains unchanged. This makes this application suitable for long-term stress testing without exhausting storage resources due to the continuous growth of data volume. Furthermore, when a temperature jump event occurs, although the jump has passed, the circular buffer still retains historical data from before and after the jump. By freezing the buffer, i.e., stopping writing or marking key data positions, the change trajectory of the fixture output before and after the jump can be completely traced. In addition, the reading operation of the circular buffer is independent of the writing operation. When a temperature jump event triggers the diagnostic process, the required historical data can be read from the buffer immediately without waiting for the data to be retransmitted from the ADC acquisition device, thus ensuring the timeliness of the diagnosis.

[0030] Step S103: Obtain the target resistance value input to the temperature simulation fixture. The target resistance value is the resistance value referenced for generating the second resistance value.

[0031] In practical applications, during HIL testing, the target temperature value for each temperature acquisition channel is determined based on the test cases, such as -40℃ to 120℃. Then, the target resistance value corresponding to the target temperature value is found according to the preset NTC resistance value table. This target resistance value is sent to the temperature simulation fixture via the communication interface. Part of the NTC resistance value table is shown in Table 1: R25℃ = 100KΩ ± 1%, B25 / 50 = 3950 KΩ ± 1%. After receiving the command, the temperature simulation fixture adjusts the output resistance value of its internal resistor network or digital potentiometer according to the command value. If the temperature simulation fixture cannot output a resistance value consistent with the target value, it will also cause temperature jumps. Therefore, it is necessary to obtain the target resistance value referenced by the temperature simulation fixture in generating the second resistance value for fault analysis. The target resistance value can be denoted as Rtte.

[0032] Table 1. Examples of NTC Resistance Values

[0033] To better understand the relationship between the target resistance, the first resistance, and the second resistance, let's take the above example of a temperature jump from 25°C to 27°C. Assume the temperature of the BMS device needs to be controlled at 25°C, and the resistance corresponding to 25°C is resistance B. Then, resistance B is the target resistance. After inputting resistance B into the temperature simulation fixture, the temperature simulation fixture generates resistance A and inputs it into the BMS device. If the temperature of the BMS device jumps from 25°C to 27°C, then the resistance corresponding to 27°C is the first resistance, and resistance A is the second resistance.

[0034] Step S104: Generate the first deviation value between the second resistance value and the target resistance value.

[0035] In practical applications, to measure the deviation between the actual output resistance and the expected output resistance of the temperature simulation fixture, a first deviation value can be generated between the second resistance value and the target resistance value. The first deviation value Δ1 can be generated as: Δ1 = |Radc - Rtte|. The first deviation value Δ1 reflects the output accuracy of the temperature simulation fixture. If Δ1 is small, it indicates that the actual output of the temperature simulation fixture is consistent with the command value, and the fixture is working normally; if Δ1 is large, it indicates that the actual output of the temperature simulation fixture deviates from the command value, and the fixture may have an output abnormality.

[0036] Step S105: Generate a second deviation value between the first resistance value and the second resistance value.

[0037] In practical applications, errors in the temperature acquisition process can also cause temperature jumps. To identify this, a second deviation value can be generated between the first and second resistance values. This second deviation value measures the consistency between the resistance value acquired by the BMS device and the actual resistance value output by the temperature simulation fixture. The second deviation value Δ2 can be generated as Δ2 = |Rbms - Radc|. The second deviation value reflects the accuracy of the BMS device's acquisition link. If Δ2 is small, it indicates that the acquisition result of the BMS device is consistent with the independent reference value, and the BMS acquisition link is working normally. If Δ2 is large, it indicates that the acquisition result of the BMS device deviates from the independent reference value, and there may be an abnormality in the BMS acquisition link, including but not limited to acquisition circuit failures and poor wiring harness contact.

[0038] Step S106: Analyze the first deviation value, the second deviation value, and the internal communication link data to obtain the cause of the temperature jump in the battery management system device.

[0039] In practical applications, a comprehensive analysis can be performed based on the first deviation value, the second deviation value, and internal communication link data to automatically determine the cause of the temperature jump fault according to preset judgment rules. In this way, by acquiring the BMS acquisition value after the temperature jump, the tooling input value before the jump, and the target resistance value referenced by the tooling, a three-dimensional data comparison model of the target resistance value, the reference measured value, and the BMS feedback value is constructed. The first deviation value can be used to determine whether the tooling output is accurate, the second deviation value to determine whether the BMS acquisition link is normal, and the internal communication link data to determine whether communication is interfered with. This allows for rapid automatic fault location at the instant the temperature jump occurs. The entire process eliminates the need for manual replacement of components and interruption of the testing process, improving fault diagnosis efficiency and reducing traditional hour-level manual troubleshooting to millisecond-level automatic diagnosis.

[0040] In an exemplary embodiment, if the first deviation value is greater than the first preset threshold ε1, the cause of the temperature jump in the battery management system device can be determined to be a tooling output failure. That is, if Δ1>ε1, the cause of the failure is determined to be a tooling output failure. This is because the ADC acquisition device, as an independent and reliable reference, acquires a second resistance value Radc that truly reflects the actual resistance value required by the temperature simulation tooling. When the deviation between Radc and the command value Rtte exceeds the allowable range, it indicates that the temperature simulation tooling has failed to accurately output the resistance value required by the command. Therefore, the source of the failure is on the temperature simulation tooling side. If the first deviation value is less than or equal to the first preset threshold and the second deviation value is greater than the second preset threshold ε2, the cause of the temperature jump in the battery management system device is determined to be a temperature acquisition link failure. That is, if Δ1≤ε1 and Δ2>ε2, the cause of the failure is determined to be a temperature acquisition link failure. Temperature acquisition link failures may include, but are not limited to, internal acquisition circuit failures in the BMS device, damage to the temperature acquisition channel, or poor contact of the signal harness from the temperature simulation tooling to the BMS device. If the first deviation value is less than or equal to the first preset threshold, the second deviation value is less than or equal to the second preset threshold, and there is a communication error in the internal communication link data, then the cause of the temperature jump in the battery management system device is determined to be communication link interference. That is, if Δ1≤ε1 and Δ2≤ε2 and the PEC indicator shows a communication error (e.g., PEC>0), then the cause of the fault is determined to be communication link interference. This is because, under the premise that the temperature simulation fixture outputs an accurate resistance value and the BMS acquires accurate data, the temperature jump is not caused by a hardware failure of the temperature simulation fixture or the acquisition link, but may be caused by a data transmission error on the communication link. For example, electromagnetic interference on the CAN bus may cause the temperature data reported by the BMS device to be distorted during transmission. If Δ1≤ε1 and Δ2≤ε2 and the PEC indicator shows no communication error (e.g., PEC=0), then there is no obvious fault source. In this case, the jump may be caused by occasional external interference, which can be further confirmed by continuously monitoring multiple subsequent sampling cycles. The first preset threshold, the second preset threshold, etc., can be flexibly set according to the application scenario. For example, the first preset threshold can be 1Ω, and the second preset threshold can be 2Ω, etc.

[0041] It's important to note that the resistance value before the temperature jump was chosen to determine the second resistance value because the temperature jump event is detected through temperature data reported by the BMS device. When the jump is detected, the temperature value reported by the BMS device is already an abnormal value after the jump. At this point, if the same tool output value is obtained from the ADC acquisition device, two scenarios are possible: First, if the fault source is in the BMS acquisition link or communication link, the tool output value acquired by the ADC acquisition device at the jump time will still be normal, consistent with the value before the jump. Second, if the fault source is in the temperature simulation tool, the value acquired by the ADC acquisition device at the jump time may have already become abnormal. Therefore, by comparing the tool output value before the jump with the target resistance value, it can be determined whether the temperature simulation tool was working normally before the jump. If the temperature simulation tool output was normal before the jump, it indicates that the temperature simulation tool was normal before the jump, and the jump is unlikely to be caused by a persistent fault in the temperature simulation tool. If there was a deviation in the temperature simulation tool output before the jump, it indicates that the temperature simulation tool itself may have a problem. Simultaneously, by comparing the BMS acquired value after the transition with the temperature simulation tool input value before the transition, it can be determined whether the BMS acquisition link underwent a state change before and after the transition. If the temperature simulation tool input value was normal before the transition but the BMS acquired value was abnormal after the transition, it indicates that the fault occurred on the BMS acquisition link or communication link side. This approach, using the normal value before the transition as an anchor point, allows this application to locate the fault source instantly by utilizing the data changes before and after the transition, without waiting for the fault to persist or reproduce.

[0042] In an exemplary embodiment, an analysis report can also be generated based on the diagnostic results. Specifically, the time information of the temperature jump in the BMS device can be determined; troubleshooting suggestions for the BMS device can be generated based on the cause of the fault. For example, if the cause of the fault is a tooling output fault, it is recommended to check the resistor network and digital potentiometer of the temperature simulation tooling and verify its output accuracy; if the cause of the fault is a temperature acquisition link fault, it is recommended to check whether the wiring harness connector of the BMS device acquisition channel has good contact and verify the voltage divider resistor accuracy of the acquisition circuit; if the cause of the fault is communication link interference, it is recommended to check whether the CAN bus termination resistor is matched and whether the shielding layer grounding is reliable, and to troubleshoot electromagnetic interference sources; then, based on the time information, the first resistance value, and the second resistance value, an analysis report can be generated. The system generates an analysis report by recording the target resistance value, fault cause, and troubleshooting suggestions. The report can be in HTML format and includes the following: report header, overview of the switching event, key data, fault cause analysis, troubleshooting suggestions, and appendix. The report header may include the title, generation time, and report number. The switching event overview may include the occurrence time, acquisition channel identifier, and temperature values ​​before and after the switching event. Key data may include the target resistance value, second resistance value, first deviation value, and second deviation value. The fault cause analysis may include conclusions and judgment criteria based on the decision rules. The troubleshooting suggestions may include targeted troubleshooting directions and operational guidelines. The appendix may include a resistance change trajectory graph before and after the switching event. In this way, the analysis report provides testers with a complete and traceable chain of evidence, facilitating subsequent problem closure and R&D improvements. Testers do not need to manually record and organize data; they can obtain all the information needed for troubleshooting simply by consulting the report.

[0043] In the exemplary embodiment, the digital potentiometers, resistor networks, and drive circuits inside the temperature simulation fixture gradually age during long-term stress testing, manifesting as a gradual decrease in the accuracy of the output resistance, a gradual increase in response delay, and a gradual increase in output noise. If diagnosis is only performed after a temperature jump has occurred, the fixture can only be replaced after the fault occurs, causing test interruption and making it impossible to determine whether the fixture is still usable or needs to be replaced, thus affecting the diagnosis of other temperature jump factors. To address this issue, during the normal operation of the temperature simulation fixture, the actual output resistance sequence of the fixture under multiple resistance output commands can be obtained, along with the command value sequence corresponding to each resistance output command. For each resistance output command, a third deviation value between the actual output resistance and the command value is generated. Based on the third deviation value corresponding to each resistance output command, a deviation time series of the third deviation value over time is generated. The deviation time series is analyzed according to a preset aging trend model to generate a health status assessment index for the temperature simulation fixture. The health status assessment index may include at least one of the following: deviation mean, deviation standard deviation, deviation change rate, and predicted remaining life. The aging trend model may be a linear regression model, an exponential smoothing model, or a Kalman filter model, etc. When the health status assessment index meets the preset warning conditions, a maintenance warning signal for the temperature simulation fixture is generated, and this temperature simulation fixture is prohibited from participating in the temperature detection of the BMS equipment.

[0044] This application provides a temperature jump diagnosis method. In response to a temperature jump in a battery management system (BMS) device, the method acquires internal communication link data of the BMS device and a first resistance value at the time of the temperature jump; acquires a second resistance value, which is the resistance value input to the BMS device by a temperature simulation fixture before the temperature jump; acquires a target resistance value input to the temperature simulation fixture, which is the target resistance value referenced for generating the second resistance value; generates a first deviation value between the second resistance value and the target resistance value; generates a second deviation value between the first resistance value and the second resistance value; and analyzes the first deviation value, the second deviation value, and the internal communication link data to obtain the cause of the temperature jump in the BMS device. In this application, when a temperature jump occurs, multi-source data is constructed by acquiring the second resistance value input by the temperature simulation fixture before the jump, the first resistance value collected by the BMS after the jump, the internal communication link data, and the target resistance value referenced by the temperature simulation fixture. The method automatically locates the cause of the fault by analyzing the deviation between the three resistance values ​​and the internal communication link data, eliminating the need for manual replacement of components one by one, thus improving the efficiency of fault diagnosis.

[0045] To facilitate understanding of the proposed solution, it is assumed that in the HIL test of a certain new energy BMS, a long-term burn-in verification of the BMS's temperature acquisition function is required. The test system is as follows: Figure 2As shown, the system includes: a host computer, a temperature simulation fixture, a BMS device under test (DUT), and an ADC acquisition device. The host computer can be an industrial control computer with test control software installed. The temperature simulation fixture can output a programmable resistor simulator with resistance values ​​from 0Ω to 500kΩ. The DUT can have 8 temperature acquisition channels with a sampling period of 100ms, reporting data via a CAN bus. The ADC acquisition device can have 16-bit precision, 8-channel synchronous sampling, a sampling rate of 1Hz, and a circular buffer to store data from the most recent 10 seconds. The test process is as follows.

[0046] The testers first configured the test cases in the host computer and set the target temperature value for each temperature acquisition channel. Assuming that the target temperature of channel 1 is 25℃, the host computer looks up the NTC resistance value table of the preset 100kΩ NTC thermistor and finds that the resistance value corresponding to 25℃ is 100kΩ. The host computer then sends a command to the temperature simulation fixture, requiring channel 1 to output a resistance value of 100kΩ.

[0047] After receiving the command, the temperature simulation fixture adjusts the output resistance of channel 1 to 100kΩ using its internal digital potentiometer. The output signal line of the temperature simulation fixture is physically branched and connected to the channel 1 acquisition input terminal of the BMS device and the channel 1 analog input terminal of the ADC acquisition device, respectively.

[0048] The ADC acquisition device acquires the resistance signal of channel 1 at a period of 1 second and continuously writes the acquisition results into a circular buffer. The acquisition results include the resistance value and the corresponding timestamp. During the test, the circular buffer always stores the resistance data acquired by the ADC acquisition device within the last 10 seconds.

[0049] The BMS device acquires the resistance signal of channel 1 at a period of 100ms, converts it into a temperature value, and then reports it to the host computer via the CAN bus.

[0050] The host computer performs real-time temperature jump detection on the received temperature data. Assume that at 3 hours, 27 minutes, and 15 seconds into the stress test, the temperature value of channel 1 reported by the BMS device suddenly jumps from 25℃ to 32℃, lasting for 1.2 seconds before returning to 25℃. The host computer calculates the temperature difference ΔT = 7℃, exceeding the preset rate of change threshold of 3℃, and the duration of 1.2 seconds exceeds the preset duration threshold of 1 second, thus determining it as a temperature jump event.

[0051] The host computer immediately triggers the diagnostic process: First, it acquires the internal communication link data of the BMS device. Specifically, it reads the error status register of the CAN controller and finds that the CRC check error count PEC=0 in the past second, indicating that there are no errors in the communication link. Second, it acquires the first resistance value of the BMS device after the temperature jump. Specifically, starting from the temperature value of 32℃ reported by the BMS device, it calculates the corresponding resistance value according to the NTC resistance table. Looking up the table, the resistance value corresponding to 32℃ is approximately 78.5kΩ, denoted as Rbms=78.5kΩ, which is the first resistance value. Next, it reads the second resistance value acquired by the ADC acquisition device before the temperature jump from the circular buffer. Specifically, based on the temperature jump time, it searches the circular buffer for the ADC acquisition data with the timestamp closest to but earlier than the temperature jump time. Assuming that the ADC acquisition resistance value is Radc=100.05kΩ one second before the temperature jump time, this value is the second resistance value. Finally, obtain the target resistance value referenced by the temperature simulation fixture to generate the second resistance value. For example, read the latest resistance value instruction stored locally, Rtte=100kΩ, which is the target resistance value.

[0052] The host computer calculates the first deviation value Δ1 = |Radc - Rtte| = |100.05kΩ - 100kΩ| = 0.05kΩ. Assuming the first preset threshold ε1 = 1kΩ, then Δ1 ≤ ε1, indicating that the temperature simulation fixture output is accurate. The host computer calculates the second deviation value Δ2 = |Rbms - Radc| = |78.5kΩ - 100.05kΩ| = 21.55kΩ. Assuming the second preset threshold ε2 = 2kΩ, then Δ2 > ε2, indicating that the BMS device's acquired value deviates significantly from the independent reference value. According to the decision rule: Δ1 ≤ ε1 and Δ2 > ε2, the host computer determines that the fault is caused by a temperature acquisition link failure. At the same time, the host computer sends an alarm command to the ADC acquisition device, and the ADC acquisition device drives the buzzer to sound an alarm, alerting the test personnel that a fault has occurred on site.

[0053] The host computer reads historical resistance data from the circular buffer for 5 seconds before and after the temperature jump, including the data for 5 seconds before and after the jump, and generates a resistance change trajectory to show that the resistance value collected by the ADC acquisition device is always stable around 100kΩ before and after the jump, without any abnormal fluctuations. This further confirms that the fault source is not on the temperature simulation fixture side. Based on this, corresponding troubleshooting suggestions are generated, such as checking whether the acquisition circuit and signal harness connector of channel 1 of the BMS device are in good contact, and verifying the accuracy of the voltage divider resistor of the acquisition channel.

[0054] The host computer automatically generates a diagnostic report in HTML format, recording the time of the jump, channel identifier, ternary resistance data, first deviation value, second deviation value, diagnostic conclusion, and troubleshooting suggestions.

[0055] Based on the diagnostic report, the testers quickly located a loose connection problem in the signal harness connector of channel 1 of the BMS device. After re-plugging and tightening the connector, the problem was resolved.

[0056] Please see Figure 3 , Figure 3 This is a schematic diagram of a temperature jump diagnostic system provided in an embodiment of this application.

[0057] This application provides a temperature jump diagnostic system, which may include: The first resistance value acquisition module 101 is used to acquire the internal communication link data of the battery management system device and the first resistance value at the time of the temperature jump in response to the temperature jump of the battery management system device. The second resistance value acquisition module 102 is used to acquire a second resistance value, which is the resistance value input by the temperature simulation fixture to the battery management system device before the temperature jump. The target resistance value acquisition module 103 is used to acquire the target resistance value input to the temperature simulation fixture. The target resistance value is the target resistance value referenced for generating the second resistance value. The first deviation value generation module 104 is used to generate a first deviation value between the second resistance value and the target resistance value; The second deviation value generation module 105 is used to generate a second deviation value between the first resistance value and the second resistance value; The fault analysis module 106 is used to analyze the first deviation value, the second deviation value, and the internal communication link data to obtain the fault cause of the temperature jump in the battery management system equipment.

[0058] The present application provides a temperature jump diagnosis system, wherein the fault analysis module is specifically used to: in response to a first deviation value being greater than a first preset threshold, determine that the cause of the temperature jump in the battery management system equipment is a tooling output fault.

[0059] This application provides a temperature jump diagnostic system, in which the fault analysis module is specifically used to: in response to a first deviation value being less than or equal to a first preset threshold and a second deviation value being greater than a second preset threshold, determine that the cause of the temperature jump in the battery management system device is a temperature acquisition link failure.

[0060] The temperature jump diagnostic system provided in this application embodiment includes a fault analysis module that is specifically used to: in response to a first deviation value being less than or equal to a first preset threshold, a second deviation value being less than or equal to a second preset threshold, and a communication error existing in the internal communication link data, determine that the cause of the temperature jump fault in the battery management system device is communication link interference.

[0061] The temperature jump diagnostic system provided in this application embodiment includes a second resistance value acquisition module that can be specifically used to: read historical resistance value data obtained by acquiring and storing the resistance value output by the analog-to-digital conversion acquisition device to the temperature simulation fixture from the circular buffer; and in the historical resistance value data, the resistance value whose acquisition time matches the temperature jump time is used as the second resistance value.

[0062] The temperature jump diagnostic system provided in this application embodiment may further include: The alarm module is used to control the analog-to-digital converter to issue an alarm in response to a temperature jump in the battery management system equipment.

[0063] The temperature jump diagnostic system provided in this application embodiment may further include: The time determination module is used by the fault analysis module to analyze the first deviation value, the second deviation value, and the internal communication link data to determine the time information of the temperature jump of the battery management system device after obtaining the fault cause of the temperature jump. The module is recommended to generate troubleshooting suggestions for the battery management system device based on the cause of the fault. The report generation module is used to generate an analysis report on temperature fluctuations in battery management system devices based on time information, first resistance value, second resistance value, target resistance value, cause of failure, and troubleshooting suggestions.

[0064] This application also provides an electronic device and a computer-readable storage medium, both of which have the corresponding effects of the temperature jump diagnosis method provided in the embodiments of this application. Please refer to... Figure 4 , Figure 4 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.

[0065] An electronic device provided in this application includes a memory 201 and a processor 202. The memory 201 stores a computer program, and when the processor 202 executes the computer program, it implements the steps of the temperature jump diagnosis method described in any of the above embodiments.

[0066] Please see Figure 5Another electronic device provided in this application embodiment may further include: an input port 203 connected to the processor 202 for transmitting commands input from the outside to the processor 202; a display unit 204 connected to the processor 202 for displaying the processing results of the processor 202 to the outside; and a communication module 205 connected to the processor 202 for enabling communication between the electronic device and the outside. The display unit 204 may be a display panel, a laser scanning display, etc.; the communication method adopted by the communication module 205 includes, but is not limited to, Mobile High-Definition Link (MHL), Universal Serial Bus (USB), High-Definition Multimedia Interface (HDMI), wireless connection: Wireless Fidelity (WiFi), Bluetooth communication technology, Bluetooth Low Energy communication technology, and communication technology based on IEEE 802.11s.

[0067] This application provides a computer-readable storage medium storing a computer program. When the computer program is executed by a processor, it implements the steps of the temperature jump diagnosis method described in any of the above embodiments.

[0068] The computer-readable storage media involved in this application include random access memory (RAM), memory, read-only memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disks, removable disks, CD-ROMs (compact disc read-only memory), or any other form of storage media known in the art.

[0069] This application provides a computer program product, including a computer program / instructions, which, when executed by a processor, implement the steps of the temperature jump diagnosis method described in any of the above embodiments.

[0070] For descriptions of relevant parts of the temperature jump diagnostic system, electronic device, and computer-readable storage medium provided in the embodiments of this application, please refer to the detailed descriptions of the corresponding parts in the temperature jump diagnostic method provided in the embodiments of this application, and they will not be repeated here. Furthermore, parts of the technical solutions provided in the embodiments of this application that are consistent with the implementation principles of corresponding technical solutions in the prior art have not been described in detail to avoid excessive elaboration.

[0071] It should also be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0072] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for diagnosing temperature jumps, characterized in that, include: In response to a temperature jump in the battery management system device, the internal communication link data of the battery management system device and the first resistance value at the time of the temperature jump are obtained. Obtain the second resistance value, which is the resistance value input by the temperature simulation fixture to the battery management system device before the temperature jump; Obtain the target resistance value input to the temperature simulation fixture, wherein the target resistance value is the resistance value referenced for generating the second resistance value; Generate a first deviation value between the second resistance value and the target resistance value; Generate a second deviation value between the first resistance value and the second resistance value; By analyzing the first deviation value, the second deviation value, and the internal communication link data, the cause of the temperature jump in the battery management system device is obtained.

2. The method according to claim 1, characterized in that, Analyzing the first deviation value, the second deviation value, and the internal communication link data reveals the causes of temperature jumps in the battery management system equipment, including: If the first deviation value is greater than the first preset threshold, the cause of the temperature jump in the battery management system equipment is determined to be a tooling output fault.

3. The method according to claim 1, characterized in that, Analyzing the first deviation value, the second deviation value, and the internal communication link data reveals the causes of temperature jumps in the battery management system equipment, including: If the first deviation value is less than or equal to the first preset threshold and the second deviation value is greater than the second preset threshold, then the cause of the temperature jump in the battery management system device is determined to be a temperature acquisition link failure.

4. The method according to claim 1, characterized in that, Analyzing the first deviation value, the second deviation value, and the internal communication link data reveals the causes of temperature jumps in the battery management system equipment, including: If the first deviation value is less than or equal to the first preset threshold, the second deviation value is less than or equal to the second preset threshold, and there is a communication error in the internal communication link data, then the cause of the temperature jump in the battery management system device is determined to be communication link interference.

5. The method according to claim 1, characterized in that, Obtain a second resistance value, which is the resistance value input by the temperature simulation fixture to the battery management system device before the temperature jump, including: Historical resistance data is obtained from the ring buffer after the analog-to-digital converter acquisition device acquires and stores the resistance value output by the temperature simulation fixture. In the historical resistance data, the resistance value whose acquisition time matches the temperature jump time is used as the second resistance value.

6. The method according to claim 5, characterized in that, Also includes: In response to a temperature jump in the battery management system equipment, the analog-to-digital converter data acquisition device will trigger an alarm.

7. The method according to claim 1, characterized in that, After analyzing the first deviation value, the second deviation value, and the internal communication link data to determine the cause of the temperature jump in the battery management system device, the analysis further includes: Determine the timing information of temperature jumps in battery management system devices; Based on the causes of the faults, troubleshooting suggestions for the battery management system equipment are generated. Based on the time information, the first resistance value, the second resistance value, the target resistance value, the cause of the fault, and the troubleshooting suggestions, an analysis report on the temperature jump of the battery management system device is generated.

8. A temperature jump diagnostic system, characterized in that, include: The first resistance value acquisition module is used to acquire the internal communication link data of the battery management system device and the first resistance value at the time of the temperature jump in response to the temperature jump of the battery management system device. The second resistance value acquisition module is used to acquire a second resistance value, which is the resistance value input by the temperature simulation fixture to the battery management system device before the temperature jump. The target resistance value acquisition module is used to acquire the target resistance value input to the temperature simulation fixture, wherein the target resistance value is the resistance value referenced for generating the second resistance value; The first deviation value generation module is used to generate a first deviation value between the second resistance value and the target resistance value; The second deviation value generation module is used to generate a second deviation value between the first resistance value and the second resistance value; The fault analysis module is used to analyze the first deviation value, the second deviation value, and the internal communication link data to obtain the fault cause of temperature jump in the battery management system device.

9. An electronic device, characterized in that, include: Memory, used to store computer programs; A processor, configured to implement the steps of the temperature jump diagnosis method as described in any one of claims 1 to 7 when executing the computer program.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, implements the steps of the temperature jump diagnosis method as described in any one of claims 1 to 7.

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