A package cavity structure, a preparation method and applications thereof

Abstract

The application provides a packaging cavity structure, a preparation method and application. The packaging cavity comprises a dielectric layer, a first surface and a second surface opposite to the first surface, a metal dam arranged on the first surface of the dielectric layer, and a cavity surrounded by the dielectric layer and the metal dam. The packaging cavity is used for packaging an optical device, which can effectively avoid thermal resistance generated by a light-emitting window and a shell connecting surface, avoid the limitation of traditional high-temperature welding on the material selection of the light-emitting window, and widen the application range of the material selection and light-emitting form of the light-emitting window. The packaging cavity structure is applied to the packaging of a light-emitting device, simplifies the assembly process, is easier to realize large-scale batch production, and improves the universality of the packaging structure. The application forms the packaging cavity by using the metal dam, realizes adjustable dam height, and is easier to realize the packaging form of a micro-thin packaging structure.

Description

[0001] This invention is a divisional application of the invention patent application filed by the applicant, Jiangsu Borui Optoelectronic Co., Ltd., on July 18, 2023, with application number 202310884931.1 and invention title "A Packaging Cavity Structure, Preparation Method and Application". Technical Field

[0002] This invention relates to the field of semiconductor light source packaging technology, specifically to a packaging cavity structure, preparation method, and application. Background Technology

[0003] Packaging of light-emitting devices is an important application method, ranging from large-scale LED light source packaging structures to small-scale laser diode and micro-laser packaging. The application of simplified, lightweight, and ultra-thin laser packaging devices is receiving increasing attention in the industry and has become a future application development trend. Current light-emitting device packaging structures, such as laser packaging, generally involve placing the laser on a substrate, forming a shell around the laser on the substrate, and connecting a light-emitting window to the top of the shell. The light-emitting window is typically made of glass or similar materials, and the shell is connected to the substrate and the light-emitting window to the shell respectively through bonding or welding. Current light-emitting device packaging structures generally suffer from the following problems: 1. Complex Packaging Structure. The light-emitting window, housing, substrate, and light-emitting device require specific connection methods to achieve the packaging connection. In particular, the connection between the light-emitting window and the housing generally requires interface bonding (usually welding, adhesive bonding, etc.). On one hand, conventional connection methods create holes at the connection surface. During the heat dissipation process from the light-emitting window through the housing, thermal resistance is generated at the connection surface. Especially for light emission methods where the laser light is emitted through the light-emitting window, the heat needs to be dissipated through the housing, requiring a better heat conduction method. The thermal resistance generated by conventional connection methods severely affects heat dissipation efficiency, causing heat accumulation and thus affecting the stability of the emitted light. On the other hand, for some heat-sensitive light-emitting window materials, the welding process can create hot spots at the welding surface, which can damage the stability of the light-emitting window material, thus affecting the stability and uniformity of the emitted light.

[0004] 2. The assembly process is complex. The light-emitting window, housing, light-emitting device, and substrate need to be assembled and connected in pairs to achieve the encapsulation of the entire packaging structure. Different types of light-emitting devices require different packaging structures and connection methods, resulting in poor versatility of the packaging structure.

[0005] 3. Currently, miniaturized laser packaging devices rarely achieve micro-volume due to the complex packaging structure and assembly process mentioned above, especially in terms of ultra-thin packaging structures.

[0006] Chinese patent CN202020460750.8 discloses a packaging structure for a semiconductor laser, including multiple laser chips, a ceramic heat sink, a ceramic frame, and an optical window. The laser chips are disposed within a closed space enclosed by the ceramic heat sink, ceramic frame, and optical window. Light emitted from the laser chips exits through the optical window. Each laser chip includes a ceramic base bonded to the ceramic heat sink. The ceramic frame is used to fix the ceramic heat sink, and the optical window is connected to the ceramic frame via glass solder or metal solder. This patent uses all-ceramic packaging technology to solve the heat dissipation problem of the laser chips; however, it involves many packaging components, the packaging process is complex, and the heat dissipation of the optical window is significantly affected by the thermal resistance of the connection surface. Summary of the Invention

[0007] The purpose of this invention is to provide a light-emitting device packaging structure and its preparation method in order to overcome the shortcomings of the prior art.

[0008] One of the objectives of this invention is to provide an integrated packaging structure for the light-emitting window and the housing, which avoids the thermal resistance generated at the connection surface between the light-emitting window and the housing, and better realizes the heat conduction and heat dissipation of the light-emitting window. At the same time, the integrated design avoids the limitations of traditional high-temperature welding on the selection of light-emitting window materials, and broadens the selection of light-emitting window materials and the application range of light-emitting forms.

[0009] The second objective of this invention is to simplify the assembly process through an integrated packaging structure, making it easier to achieve large-scale mass production and improving the versatility of the packaging structure.

[0010] The third objective of this invention is to achieve adjustable dam height by integrally growing a dam around the light-emitting window, which makes it easier to realize the packaging form of a micro-ultra-thin packaging structure.

[0011] Specifically, the present invention proposes the following technical solution: A method for fabricating a packaging cavity structure includes the following steps: Select a dielectric layer, the dielectric layer including a first surface and a second surface opposite to the first surface; A first adhesive conductive layer is prepared, wherein the first adhesive conductive layer is formed on a first surface of the dielectric layer; A first photoresist layer is coated on the first adhesive conductive layer; The first photoresist layer is patterned to form a first opening that exposes the first adhesive conductive layer, the first opening surrounding the central region of the first photoresist layer; A first metal layer is electroplated in the first opening, and the surfaces of the first metal layer and the first photoresist layer are smoothed. Coat a second photoresist layer; The second photoresist layer is patterned to form a second opening that exposes the first metal layer; A second metal layer is electroplated in the second opening; Remove the first photoresist layer and the second photoresist layer to form the encapsulation cavity structure.

[0012] Furthermore, the medium layer is a light-transmitting medium layer.

[0013] Furthermore, the light-transmitting medium layer includes fluorescent ceramic, sapphire, or glass.

[0014] Furthermore, the preparation of the first adhesive conductive layer includes forming an adhesive layer on a first surface of the dielectric layer and forming a conductive layer on the adhesive layer.

[0015] Furthermore, the material of the adhesive layer includes titanium, tungsten, or chromium; and / or, the material of the conductive layer includes copper metal or copper alloy.

[0016] The present invention also proposes a packaging cavity structure, the packaging cavity comprising: A dielectric layer, the dielectric layer comprising a first surface and a second surface opposite to the first surface; A metal dam, wherein the metal dam is disposed on the first surface of the medium layer; A cavity, the cavity being enclosed by the dielectric layer and the metal dam.

[0017] Furthermore, the medium layer is a light-transmitting medium layer; and / or, the light-transmitting medium layer includes fluorescent ceramic, sapphire, or glass.

[0018] Furthermore, it also includes a first adhesive conductive layer formed on the first surface of the dielectric layer, the first adhesive conductive layer serving as a seed layer for the metal dam.

[0019] Furthermore, the projection of the first adhesive conductive layer on the first surface of the dielectric layer protrudes beyond the projection of the metal dam on the first surface of the dielectric layer.

[0020] Furthermore, the second surface of the dielectric layer includes a planar, concave, or convex shape.

[0021] This invention also proposes a packaging method for a light-emitting device, comprising the following steps: A packaging cavity structure is prepared according to the preparation method proposed in this invention; Fabrication of light source substrate structure; A chip is mounted on the light source substrate structure; Align and connect the encapsulation cavity structure with the light source substrate structure.

[0022] Furthermore, the fabrication of the light source substrate structure includes: Select a substrate; Conductive wiring layers are prepared on the front and back sides of the substrate; A solder film is prepared on the surface where the substrate and the packaging cavity structure are joined.

[0023] Furthermore, the solder film includes a self-propagating brazing film.

[0024] Furthermore, the self-propagating brazing film comprises a stacked first brazing layer, a self-propagating film, and a second brazing layer.

[0025] Furthermore, the connection method includes brazing, self-propagating, or bonding.

[0026] Furthermore, the chip includes a laser or an LED.

[0027] The present invention also proposes a light-emitting device, the light-emitting device comprising: light source substrate; A light-emitting chip, wherein the light-emitting chip is mounted on the light source substrate; An encapsulation cavity, connected to the light source substrate, to form a space for accommodating the light-emitting chip; wherein, the encapsulation cavity includes: A dielectric layer, the dielectric layer comprising a first surface and a second surface opposite to the first surface; A metal dam, wherein the metal dam is disposed on the first surface of the medium layer; A cavity, the cavity being enclosed by the dielectric layer and the metal dam.

[0028] Furthermore, the medium layer is a light-transmitting medium layer; and / or, the light-transmitting medium layer includes fluorescent ceramic, sapphire, or glass.

[0029] Furthermore, it also includes a first adhesive conductive layer formed on the first surface of the dielectric layer, the first adhesive conductive layer serving as a seed layer for the metal dam.

[0030] Furthermore, the projection of the first adhesive conductive layer on the first surface of the dielectric layer protrudes beyond the projection of the metal dam on the first surface of the dielectric layer.

[0031] Furthermore, the second surface of the dielectric layer includes a planar, concave, or convex shape.

[0032] Furthermore, it also includes a solder film disposed on the light source substrate, the solder film being used for the connection between the packaging cavity and the light source substrate.

[0033] Furthermore, the solder film includes a self-propagating brazing film.

[0034] Furthermore, the light-emitting chip includes a laser chip or an LED chip.

[0035] Furthermore, the laser chip comprises multiple laser chips, which are arranged in an array within the packaging cavity.

[0036] Furthermore, it also includes a mirror disposed on the light source substrate, the mirror being used to project the light from the laser chip from the top surface of the packaging cavity.

[0037] Furthermore, it includes multiple laser chips and multiple mirrors, with each mirror corresponding to one of the multiple laser chips, used to emit light from the laser chips from the top surface of the packaging cavity.

[0038] This invention proposes a packaging cavity structure, preparation method, and application; it integrates the light-emitting window of the optical device with the housing, effectively avoiding the thermal resistance generated at the connection surface between the light-emitting window and the housing, and better realizing heat conduction and heat dissipation of the light-emitting window. At the same time, the integrated design avoids the limitations of traditional high-temperature welding on the selection of light-emitting window materials, and broadens the selection of light-emitting window materials and the application range of light-emitting forms.

[0039] The encapsulation cavity structure proposed in this invention is applied to the encapsulation of light-emitting devices, which simplifies the assembly process, makes it easier to achieve large-scale mass production, and improves the versatility of the encapsulation structure.

[0040] This invention utilizes a metal dam to form a packaging cavity, achieving adjustable dam height and making it easier to realize a micro-ultra-thin packaging structure. Attached Figure Description

[0041] Figures 1-8 This is a schematic diagram of the method for preparing the encapsulation cavity structure according to one embodiment of the present invention; Figure 9 This is a schematic diagram of a packaging cavity structure proposed in one embodiment of the present invention; Figures 10-17 This is a schematic diagram of a method for preparing a light source substrate according to one embodiment of the present invention; Figure 18 This is a schematic diagram of the structure of a self-propagating brazing film proposed in one embodiment of the present invention; Figure 19 This is a schematic diagram of the packaging structure of the light-emitting device proposed in one embodiment of the present invention; Figure 20 This is a schematic diagram of a laser chip and mirror assembly according to one embodiment of the present invention; Figure 21 This is a schematic diagram of an array formed by multiple laser chips and multiple mirrors according to one embodiment of the present invention. Detailed implementation method: To enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0042] The invention and the method of implementing the invention can be better understood by referring to the following detailed description of exemplary embodiments and accompanying drawings. However, the invention can be implemented in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. The same reference numerals may always refer to the same elements. In the drawings, the thickness of layers and regions may be exaggerated for clarity.

[0043] Example 1 like Figures 1-6 As shown, this embodiment proposes a method for preparing a packaging cavity structure, including the following steps: Select dielectric layer 1, which includes a first surface 101 and a second surface 102 opposite to the first surface 101; specifically, the dielectric layer can be any suitable encapsulation material, preferably a material suitable for conventional semiconductor processes, such as silicon or glass; more specifically, when this encapsulation cavity structure is used for a light-emitting device, to facilitate light projection, a fluorescent ceramic, glass, or sapphire dielectric layer can be selected, such as... Figure 1 As shown.

[0044] Among them, the fluorescent ceramic is, for example, a composite fluorescent ceramic, comprising a first fluorescent ceramic layer 1101 that emits at least one color of light, namely green, yellow-green, or yellow, and a second fluorescent ceramic layer 1102 disposed on the first fluorescent ceramic layer that emits red or yellow-red light; such as Figure 2 As shown.

[0045] The first fluorescent ceramic layer 1101 is, for example, LuAG:Ce 3+ Fluorescent ceramics or β-Sialon:Eu 2+ The second fluorescent ceramic layer 1102 can be CaAlSiN3:Eu 2+ Fluorescent ceramics or LSN fluorescent ceramics.

[0046] Furthermore, the composite fluorescent ceramic can also be a sheet-like structure, wherein the sheet-like structure includes a first fluorescent ceramic region 1201 in a plane and a second fluorescent ceramic region 1202 surrounding the first fluorescent ceramic region 1201; such as Figure 3 As shown.

[0047] A first adhesive conductive layer 2 is prepared, which is formed on the first surface 101 of the dielectric layer 1; as follows: Figure 4As shown. Specifically, for example, a coating process is used to form the first adhesive conductive layer 2. The coating process can be magnetron sputtering PVD, chemical vapor deposition CVD, atomic layer deposition ALD, or chemical deposition, etc.

[0048] Optionally, the first adhesive conductive layer 2 includes forming an adhesive layer on the first surface 101 of the dielectric layer 1 and forming a conductive layer on the adhesive layer. The adhesive layer material is, for example, titanium, tungsten, or chromium, with a thickness of 10-500 nm; the conductive layer material can be copper or a copper alloy, with a thickness of 0.5-5 μm.

[0049] like Figure 5 As shown, a first photoresist layer 3 is coated on the first adhesive conductive layer 2; the photoresist layer 3 can be a material such as photosensitive adhesive, photoresist, or polyester dry film. The first photoresist layer 3 is patterned to form a first opening that exposes the first adhesive conductive layer, the first opening surrounding the central region of the first photoresist layer 3.

[0050] A first metal layer 4 is electroplated in the first opening, and the surfaces of the first metal layer and the first photoresist layer are smoothed; the first metal layer 4 can be electroplated with copper, nickel, or silver; for example... Figure 6 As shown.

[0051] A second photoresist layer 6 is coated; the second photoresist layer 6 can be a material such as photosensitive adhesive, photoresist, or polyester dry film. The second photoresist layer 6 is patterned to form a second opening that exposes the first metal layer 4; A second metal layer 5 is electroplated in the second opening 4; the second metal layer 5 can be electroplated copper, nickel, or silver; the second metal layer 5 forms a metal dam, specifically, the metal dam has a diameter of 50-1000 μm and a thickness of 300-1000 μm; the thickness of the metal dam is mainly determined by the required accommodating space of the packaging cavity, and is designed according to the structure and shape of the chip; for example... Figure 7 As shown.

[0052] Remove the first photoresist layer 3 and the second photoresist layer 6 to form the encapsulation cavity structure 7; as follows: Figure 8 As shown.

[0053] Optionally, the projection of the first adhesive conductive layer 2 onto the first surface 101 of the dielectric layer 1 protrudes beyond the projection of the metal dam onto the first surface of the dielectric layer.

[0054] Example 2 This embodiment also proposes a packaging cavity structure, which is as follows: Figure 8 As shown, it includes: Dielectric layer 1, the dielectric layer includes a first surface 101 and a second surface 102 opposite to the first surface; Metal dam 501 is disposed on the first surface 101 of the medium layer 1; Cavity 701, the cavity being formed by the medium layer and the metal dam.

[0055] Optionally, when this encapsulation cavity structure is used for optical device encapsulation, the dielectric layer is a light-transmitting dielectric layer; the light-transmitting dielectric layer can be selected from light-transmitting materials such as fluorescent ceramics, sapphire, or glass, wherein the glass can also be fluorescent glass.

[0056] Optionally, it further includes a first adhesive conductive layer 2 formed on the first surface of the dielectric layer, the first adhesive conductive layer serving as a seed layer for the metal dam.

[0057] Optionally, the projection of the first adhesive conductive layer on the first surface of the dielectric layer protrudes beyond the projection of the metal dam on the first surface of the dielectric layer.

[0058] Optionally, such as Figure 9 As shown, in order to better achieve the light transmission effect, the second surface 102 of the dielectric layer 1 can also be formed into a planar, concave, or convex shape.

[0059] Optionally, the encapsulation cavity structure of this embodiment is applied to laser lighting, requiring the light-emitting window to have both laser irradiation resistance and high-temperature resistance, as well as excellent thermal conductivity and heat dissipation performance. This embodiment integrates the light-emitting window with the surrounding dam, directly forming the dam through electroplating to create an integrated structure. This avoids the problems associated with conventional connection methods such as welding and self-propagation, which can lead to uneven microstructures like pits on the surfaces of the two materials at the welding interface, resulting in interfacial thermal resistance and affecting heat conduction. This improves thermal conductivity and heat dissipation performance.

[0060] Example 3 This embodiment relates to the application of the encapsulation cavity prepared in Embodiment 1, and proposes a packaging method for a light-emitting device, including the following steps: A packaging cavity structure is prepared according to the preparation method proposed in Example 1 of the present invention; Fabrication of light source substrate structure; A chip is mounted on the light source substrate structure; Align and connect the encapsulation cavity structure with the light source substrate structure.

[0061] Among them, such as Figure 10-16 As shown, the fabrication of the light source substrate structure includes: like Figure 10As shown, substrate 7 is selected. This substrate 7 can be a substrate material applicable to the semiconductor packaging field. In this embodiment, it is, for example, a high thermal conductivity ceramic substrate, which can be materials such as aluminum nitride, aluminum oxide, and silicon carbide. like Figure 11 As shown, a through-hole structure 8 is formed on the surface of the substrate 7, for example, by using a laser processing technology; like Figure 12 As shown, a second adhesive conductive layer 9 is formed on both sides of the substrate 7 by a coating process. The second adhesive conductive layer 9 generally consists of at least two film layers, with the layer near the substrate 7 being an adhesive layer and the layer far from the substrate 7 being a conductive layer. like Figure 13 As shown, photoresist is applied to the surface of the second adhesive conductive layer 9. Figure 10 The shape is directionally exposed and cured, and after development, a unique pattern structure is formed, such as a wiring area. like Figure 14 As shown, a basic thermoelectric separation conductive heat dissipation metal layer 11 is formed by electroplating in the uncovered area through a pattern electroplating process.

[0062] like Figure 15-17 As shown, photoresist pattern 12 is further exposed and cured on the surface of patterned electroplated metal layer 11. After development, encapsulation solder film 13 is deposited on the surface of conductive heat dissipation metal layer 11 by thin film pattern deposition technology. Finally, after film removal and etching process, light source encapsulation heat dissipation bracket structure 14 is formed.

[0063] Among them, the solder film 13 includes a self-propagating solder film; such as Figure 18 As shown, the self-propagating solder film includes at least a stacked first solder layer 1302, a self-propagating film 1301, and a second solder layer 1303. Optionally, it also includes copper layers 1304 and 1305 disposed on the bottom and top surfaces of the self-propagating solder film.

[0064] Furthermore, the connection method includes brazing, self-propagating, or bonding.

[0065] Furthermore, the chip includes a laser or an LED.

[0066] Example 4 This embodiment relates to the application of the encapsulation cavity prepared in Embodiment 1, and proposes an encapsulation structure for a light-emitting device. Specifically, it relates to a light-emitting device, such as... Figure 19 As shown, the light-emitting device 16 includes: light source substrate 14; The light-emitting chip 15 is mounted on the light source substrate; The encapsulation cavity 7 is connected to the light source substrate to form a space for accommodating the light-emitting chip.

[0067] The encapsulation cavity was prepared using the method of Example 1 and has the structure of Example 2, which will not be described again here.

[0068] In this embodiment, the light-emitting chip 15 includes a laser chip or an LED chip.

[0069] Furthermore, when the light-emitting chip 15 is a laser chip, the laser chip can be configured such that the light-emitting direction is perpendicular to the light-emitting dielectric layer of the packaging cavity 7; alternatively, the laser chip can be configured such that the light-emitting direction is parallel to the light-emitting dielectric layer. In this configuration, such as... Figure 20 As shown, a mirror 17 can be provided on the light source substrate. For example, the mirror 17 is at a 45° angle to the light source substrate 14, so that the laser is emitted perpendicularly to the light-emitting medium layer of the encapsulation cavity 7.

[0070] Alternatively, multiple laser chips can be arranged on the light source substrate 14 to form an array structure.

[0071] Optionally, when using Figure 20 In the setup shown, to form an array, multiple mirrors can be arranged to correspond to multiple laser chips, as shown in the example arrangement on the light source substrate 14. Figure 21 As shown.

[0072] This invention proposes a packaging cavity structure, preparation method, and application; it integrates the light-emitting window of the optical device with the housing, effectively avoiding the thermal resistance generated at the connection surface between the light-emitting window and the housing, and better realizing heat conduction and heat dissipation of the light-emitting window. At the same time, the integrated design avoids the limitations of traditional high-temperature welding on the selection of light-emitting window materials, and broadens the selection of light-emitting window materials and the application range of light-emitting forms.

[0073] The encapsulation cavity structure proposed in this invention is applied to the encapsulation of light-emitting devices, which simplifies the assembly process, makes it easier to achieve large-scale mass production, and improves the versatility of the encapsulation structure.

[0074] This invention utilizes a metal dam to form a packaging cavity, achieving adjustable dam height and making it easier to realize a micro-ultra-thin packaging structure.

[0075] The above-described embodiments are merely preferred embodiments of the present invention. These preferred embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Various modifications and improvements made to the technical solutions of the present invention by those skilled in the art without departing from the spirit of the invention should fall within the protection scope defined by the claims of the present invention.

Claims

1. A method for preparing a packaging cavity structure, characterized in that, Includes the following steps: Select a dielectric layer, the dielectric layer including a first surface and a second surface opposite to the first surface; A first adhesive conductive layer is prepared, wherein the first adhesive conductive layer is formed on a first surface of the dielectric layer; A first photoresist layer is coated on the first adhesive conductive layer; The first photoresist layer is patterned to form a first opening that exposes the first adhesive conductive layer, the first opening surrounding the central region of the first photoresist layer; A first metal layer is electroplated in the first opening, and the surfaces of the first metal layer and the first photoresist layer are smoothed. Coat a second photoresist layer; The second photoresist layer is patterned to form a second opening that exposes the first metal layer; A second metal layer is electroplated in the second opening; Remove the first photoresist layer and the second photoresist layer to form the encapsulation cavity structure.

2. The method for preparing a packaging cavity structure according to claim 1, characterized in that, The medium layer is a light-transmitting medium layer.

3. The method for preparing a packaging cavity structure according to claim 2, characterized in that, The light-transmitting medium layer includes fluorescent ceramic, sapphire, or glass; and / or, the fluorescent ceramic is a composite fluorescent ceramic, including a first fluorescent ceramic layer that emits at least one color of light, namely green, yellow-green, or yellow, and a second fluorescent ceramic layer disposed on the first fluorescent ceramic layer that emits red or yellow-red light.

4. The method for preparing a packaging cavity structure according to claim 3, characterized in that, The composite fluorescent ceramic has a sheet-like structure, which includes a first fluorescent ceramic region in a plane and a second fluorescent ceramic region surrounding the first fluorescent ceramic region.

5. The method for preparing a packaging cavity structure according to claim 1, characterized in that, The preparation of the first adhesive conductive layer includes forming an adhesive layer on the first surface of the dielectric layer and forming a conductive layer on the adhesive layer.

6. The method for preparing a packaging cavity structure according to claim 5, characterized in that, The material of the adhesive layer includes titanium, tungsten, or chromium; and / or, the material of the conductive layer includes copper or a copper alloy.

7. A method for packaging a light-emitting device, characterized in that, Includes the following steps: A packaging cavity structure is prepared according to any one of claims 1-6; Fabrication of light source substrate structure; A chip is mounted on the light source substrate structure; Align and connect the encapsulation cavity structure with the light source substrate structure.

8. The packaging method for a light-emitting device according to claim 7, characterized in that, The fabrication of the light source substrate structure includes: Select a substrate; Conductive wiring layers are prepared on the front and back sides of the substrate; A solder film is prepared on the surface where the substrate and the packaging cavity structure are joined.

9. The packaging method for a light-emitting device according to claim 8, characterized in that, The solder film includes a self-propagating brazing film.

10. The packaging method for a light-emitting device according to claim 9, characterized in that, The self-propagating brazing film includes a stacked first brazing layer, a self-propagating film, and a second brazing layer.

11. The packaging method for a light-emitting device according to claim 7, characterized in that, The connection methods include brazing, self-propagating, or bonding.

12. The packaging method for a light-emitting device according to claim 7, characterized in that, The chip includes a laser or an LED.

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