Radio frequency front-end module and electronic device

CN122891003APending Publication Date: 2026-10-09RADROCK (SHENZHEN) SEMICONDUCTOR LTD
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Patent Information

Application Number
CN202610951758.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-06-29
Publication Date
2026-10-09

AI Technical Summary

Technical Problem

[0005]频段数量激增带来的硬件堆叠需求,与终端轻薄化、小型化的结构设计需求形成了尖锐矛盾,这也给移动终端核心组件之一的射频前端系统,带来了前所未有的技术难题与严苛挑战

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Abstract

The application provides a radio frequency power amplifier, a radio frequency front end and an electronic device, through four paths to ground, switching of a pre-stage amplification branch and an output path is realized, multiplexing and independence of partial devices in different working modes are realized, input and output load parts adapt to characteristics of corresponding working modes, a transformer network and a power amplifier transistor array occupying a larger area are multiplexed, and integration and performance are better balanced.
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Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and in particular to a radio frequency power amplifier chip, a radio frequency front-end module, and an electronic device. Background Technology

[0002] With the iterative upgrades and continuous innovation of modern communication technologies, mobile communication networks have evolved from 2G, 3G, and 4G to the current era of large-scale commercial use of 5G. Research and development and deployment of future-oriented 6G technology are also steadily progressing. The continuous upgrading of communication standards has greatly enriched the application scenarios of mobile communication. Whether it's everyday mobile communication, high-definition video transmission, the Internet of Things, or emerging fields such as the Industrial Internet of Things and low-altitude communication, all are placing higher demands on network access capabilities.

[0003] Against this backdrop, mobile terminals, represented by smartphones and wearable devices, need to be compatible with a significantly increased number of communication frequency bands. Multi-standard, multi-band, and wide coverage have become core requirements for terminal products. To ensure network compatibility and communication stability in different regions around the world, terminals must integrate more frequency band receiving and transmitting capabilities, significantly increasing the complexity of radio frequency signal processing.

[0004] In stark contrast, the development trend of consumer mobile terminals is characterized by high integration and miniaturization. As intelligent functions continue to be added, the capacity of various components such as batteries, imaging, sensors, heat dissipation, and motherboards continues to expand. However, the market and consumers have placed more stringent demands on the overall size, thickness, and weight control of terminals. Smaller size, thinner and lighter bodies, and higher integration have become the mainstream design direction in the industry.

[0005] The surge in the number of frequency bands has created a sharp contradiction with the demand for hardware stacking and the need for thinner and smaller terminal structures. This has brought unprecedented technical challenges and stringent requirements to the radio frequency front-end system, one of the core components of mobile terminals. Summary of the Invention

[0006] This application provides a radio frequency power amplifier, a radio frequency front-end module, and an electronic device, which enable the overall radio frequency power amplifier to amplify radio frequency signals while achieving both high integration and overall power performance.

[0007] In a first aspect, this application provides a radio frequency power amplifier, comprising: The first transformer network includes a first front-stage coil unit and a first rear-stage coil unit that are coupled to each other. The first preamplifier branch is connected to the first end of the first preamplifier coil unit; The second preamplifier branch is connected to the second end of the first preamplifier coil unit; The first ground path has one end connected to the first end of the first preamplifier coil unit and the other end configured to be grounded. It is configured to form a ground path when the second preamplifier branch is working and to be in a high-resistance state when the second preamplifier branch is not working. The second ground path has one end connected to the first end of the second preamplifier coil unit and the other end configured to be grounded. It is configured to form a ground path when the first preamplifier branch is working and to be in a high-resistance state when the first preamplifier branch is not working. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage radio frequency amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch. The third ground path has one end connected to the first end of the second post-stage coil unit or to the first output path, and the other end is configured to be grounded. It is configured to form a ground path when the second pre-stage amplification branch is working, and to be in a high-impedance state when the second pre-stage amplification branch is not working. The fourth path to ground has one end connected to the second end of the second post-stage coil unit or to the second output path, and the other end is configured to be grounded. It is configured to form a path to ground when the first pre-amplifier branch is working, and to be in a high-impedance state when the first pre-amplifier branch is not working.

[0008] A second aspect of this application provides a radio frequency power amplifier, comprising: The first transformer network includes a first front-stage coil unit and a first rear-stage coil unit that are coupled to each other. The first preamplifier branch is connected to the first end of the first preamplifier coil unit. The first preamplifier branch includes a first preamplifier transistor and a first capacitor. The first capacitor is connected between the output end of the first preamplifier transistor and the first end of the first preamplifier coil unit. The second preamplifier branch is connected to the second end of the first preamplifier coil unit. The second preamplifier branch includes a second preamplifier transistor and a second capacitor. The second capacitor is connected between the output end of the second preamplifier transistor and the first end of the second preamplifier coil unit. The first switch has one end connected between the first capacitor and the first end of the first pre-stage coil unit, and the other end configured to be grounded. The second switch has one end connected between the second capacitor and the first end of the second pre-coil unit, and the other end configured to be grounded. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage RF amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch, wherein the size of the amplifying transistor array in the first pre-stage amplification branch is smaller than the size of the amplifying transistor array in any amplification branch of the interstage RF amplifier circuit, and / or the size of the amplifying transistor array in the second pre-stage amplification branch is smaller than the size of the amplifying transistor array in any amplification branch of the interstage RF amplifier circuit; The first switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the first output path; The second switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the second output path.

[0009] A third aspect of this application provides a radio frequency power amplifier, comprising: The first transformer network includes a first front-stage coil unit and a first rear-stage coil unit that are coupled to each other. A first preamplifier branch is connected to a first terminal of the first preamplifier coil unit. The first preamplifier branch includes a first preamplifier transistor, a first capacitor, and a first inductor. A first terminal of the first capacitor is connected to the output terminal of the first preamplifier transistor, and a second terminal of the first capacitor is connected to the first terminal of the first preamplifier coil unit. A first terminal of the first inductor is configured to receive a first supply voltage, and a second terminal of the first inductor is connected between the output terminal of the first preamplifier transistor unit and the first terminal of the first capacitor. The second preamplifier branch is connected to the second end of the first preamplifier coil unit. The second preamplifier branch includes a second preamplifier transistor, a second capacitor, and a second inductor. The first end of the second capacitor is connected to the output end of the second preamplifier transistor, and the second end of the second capacitor is connected to the second end of the first preamplifier coil unit. The first end of the second inductor is configured to receive a second supply voltage, and the second end of the second inductor is connected between the output end of the second preamplifier transistor unit and the first end of the second capacitor. The first switch has one end connected between the first capacitor and the first end of the first pre-stage coil unit, and the other end configured to be grounded. The second switch has one end connected between the second capacitor and the first end of the second pre-stage coil unit, and the other end configured to be grounded.

[0010] Furthermore, the first supply voltage is the power supply voltage, and the second supply voltage is the battery voltage.

[0011] A fourth aspect of this application provides a radio frequency power amplifier, comprising: The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage radio frequency amplifier circuit is connected to the second pre-stage coil unit; The third switch has one end connected to the first end of the second subsequent coil unit or to the first output path, and the other end is configured to be grounded. The fourth switch has one end connected to the second end of the second subsequent coil unit or to the second output path, and the other end configured to be grounded; A first matching network is connected in the first output path, and a first end of the first matching network is connected to one end of the third switch, and a second end of the first matching network is connected to the first signal output terminal. The second matching network is connected in the second output path, and the first end of the second matching network is connected to one end of the fourth switch, and the second end of the second matching network is connected to the second signal output terminal.

[0012] A fifth aspect of this application provides a radio frequency power amplifier, comprising: The first transformer network includes a first front-stage coil unit and a first rear-stage coil unit that are coupled to each other. The first preamplifier branch is connected to the first end of the first preamplifier coil unit; The second preamplifier branch is connected to the second end of the first preamplifier coil unit; The first switch has one end connected between the first capacitor and the first end of the first pre-stage coil unit, and the other end configured to be grounded. The second switch has one end connected between the second capacitor and the first end of the second pre-coil unit, and the other end configured to be grounded. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage radio frequency amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch. The first switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the first output path; The second switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the second output path.

[0013] Furthermore, the first switching network includes a third switch, one end of which is connected to the first end of the second subsequent coil unit or to the first output path, and the other end is configured to be grounded; The second switching network includes a fourth switch, one end of which is connected to the second end of the second subsequent coil unit or to the second output path, and the other end is configured to be grounded.

[0014] A sixth aspect of this application provides a radio frequency power amplifier, comprising: The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage radio frequency amplifier circuit is connected to the second pre-stage coil unit; The first resonant capacitor has its first end connected to the first output path and its second end configured to be grounded. The first resonant inductor has its first end connected in the first output path and its second end grounded through the fifth switch; The second resonant capacitor has its first end connected in the second output path and its second end configured to be grounded. The second resonant inductor has its first end connected in the second output path and its second end grounded through the sixth switch; If the radio frequency signal of the first frequency band output by the interstage radio frequency amplifier circuit is transmitted through the first output path, then the fifth switch is closed, the sixth switch is open, and the first resonant capacitor and the first resonant inductor resonate in the first frequency band. If the radio frequency signal of the second frequency band output by the interstage radio frequency amplifier circuit is transmitted through the second output path, then the sixth switch is closed, the fifth switch is open, and the second resonant capacitor and the second resonant inductor resonate within the second frequency band.

[0015] A seventh aspect of this application provides a radio frequency front-end module, comprising: The first chip includes a first transformer network, a first preamplifier branch, a second preamplifier branch, and an interstage radio frequency amplifier circuit. The first transformer network includes a first preamplifier coil unit and a first postamplifier coil unit coupled to each other. The first preamplifier branch is connected to a first end of the first preamplifier coil unit, and the second preamplifier branch is connected to a second end of the first preamplifier coil unit. The interstage radio frequency amplifier circuit is connected between the first postamplifier coil unit and the second preamplifier coil unit and is configured to amplify the signal processed by the first preamplifier branch and the signal processed by the second preamplifier branch. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. The first switch has one end connected to the first end of the first pre-stage coil unit, and the other end configured to be grounded. The second switch has one end connected to the second end of the first pre-stage coil unit, and the other end configured to be grounded. The first switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the first output path; The second switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the second output path.

[0016] In a seventh aspect, this application provides a radio frequency front-end module, characterized in that it includes the radio frequency power amplifier described in any one of the preceding claims.

[0017] In an eighth aspect, this application provides an electronic device comprising the radio frequency power amplifier described in any of the preceding claims, or comprising the radio frequency front-end module described in any of the preceding claims.

[0018] The radio frequency power amplifier, radio frequency front-end module, and electronic device provided in this application embodiment include: a first transformer network, including a first pre-stage coil unit and a first post-stage coil unit coupled to each other; a first pre-stage amplification branch connected to a first end of the first pre-stage coil unit; a second pre-stage amplification branch connected to a second end of the first pre-stage coil unit; a first ground path, one end of which is connected to the first end of the first pre-stage coil unit, and the other end of which is configured to be grounded, configured to form a ground path when the second pre-stage amplification branch is working, and to be in a high-impedance state when the second pre-stage amplification branch is not working; a second ground path, one end of which is connected to the first end of the second pre-stage coil unit, and the other end of which is configured to be grounded, configured to form a ground path when the first pre-stage amplification branch is working, and to be in a high-impedance state when the first pre-stage amplification branch is not working; and a second transformer network, including a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The second post-stage coil unit has its first end connected to the first output path and its second end connected to the second output path. An interstage RF amplifier circuit is connected between the first post-stage coil unit and the second pre-stage coil unit, configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch. A third ground path has one end connected to the first end of the second post-stage coil unit or to the first output path, and the other end configured to be grounded. It is configured to form a ground path when the second pre-stage amplification branch is operating, and to be in a high-impedance state when the second pre-stage amplification branch is not operating. A fourth ground path has one end connected to the second end of the second post-stage coil unit or to the second output path, and the other end configured to be grounded. It is configured to form a ground path when the first pre-stage amplification branch is operating, and to be in a high-impedance state when the first pre-stage amplification branch is not operating. The switching of the preamplifier branch and the output path is realized through four paths to ground, realizing the reuse of some components and the independence of some components in different operating modes. The input and output loads are adapted to the characteristics of the corresponding operating modes. The transformer network and power amplifier transistor array occupying a large area are reused, which well balances integration and performance. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of a radio frequency power amplifier provided in an embodiment of this application; Figure 2 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 3 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 4 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 5 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 6 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 7 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 8 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 9 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 10 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 11 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 12 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 13 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 14 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 15 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 16 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 17 This is another schematic diagram of a radio frequency power amplifier provided in one embodiment of this application; Figure 18 This is a simulation diagram of a radio frequency power amplifier provided in one embodiment of this application.

[0020] Figure 19 This is another simulation diagram of the radio frequency power amplifier provided in one embodiment of this application.

[0021] Figure 20 This is another simulation diagram of the radio frequency power amplifier provided in one embodiment of this application.

[0022] Figure 21 This is another simulation diagram of the radio frequency power amplifier provided in one embodiment of this application. Detailed Implementation

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0024] It should be understood that this application can be implemented in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this application to those skilled in the art. In the drawings, for clarity, the dimensions of layers and regions, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0025] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," "linked to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as the second element, component, area, layer, or portion.

[0026] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0027] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “ / the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “compose” and / or “comprising,” when used in this specification, identify the presence of features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0028] To fully understand this application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0029] At least one embodiment of this application provides a radio frequency power amplifier, including: The first transformer network includes a first front-stage coil unit and a first rear-stage coil unit that are coupled to each other. The first preamplifier branch is connected to the first end of the first preamplifier coil unit; The second preamplifier branch is connected to the second end of the first preamplifier coil unit; The first ground path has one end connected to the first end of the first preamplifier coil unit and the other end configured to be grounded. It is configured to form a ground path when the second preamplifier branch is working and to be in a high-resistance state when the second preamplifier branch is not working. The second ground path has one end connected to the first end of the second preamplifier coil unit and the other end configured to be grounded. It is configured to form a ground path when the first preamplifier branch is working and to be in a high-resistance state when the first preamplifier branch is not working. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage radio frequency amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch. The third ground path has one end connected to the first end of the second post-stage coil unit or to the first output path, and the other end is configured to be grounded. It is configured to form a ground path when the second pre-stage amplification branch is working, and to be in a high-impedance state when the second pre-stage amplification branch is not working. The fourth path to ground has one end connected to the second end of the second post-stage coil unit or to the second output path, and the other end is configured to be grounded. It is configured to form a path to ground when the first pre-amplifier branch is working, and to be in a high-impedance state when the first pre-amplifier branch is not working.

[0030] by Figure 1 For example, the first transformer network 21 includes a first pre-stage coil unit and a first post-stage coil unit coupled to each other. In at least one embodiment, the first pre-stage coil unit may include at least one coil, or the first pre-stage coil unit may include at least two coils connected in series, or the first pre-stage coil unit may include at least two coils connected in parallel, or the first pre-stage coil unit may include multiple coils, which are partially connected in series and partially connected in parallel. In at least one embodiment, the first post-stage coil unit may include at least one coil, or the first post-stage coil unit may include at least two coils connected in series, or the first post-stage coil unit may include at least two coils connected in parallel, or the first post-stage coil unit may include multiple coils, which are partially connected in series and partially connected in parallel.

[0031] The first pre-stage coil unit and the first post-stage coil unit are coupled to each other. The coupling between the first pre-stage coil unit and the first post-stage coil unit can be single-coupling-center coupling or multi-coupling-center (two or more) coupling.

[0032] For example, such as Figure 2 As described in (a), in at least one embodiment, the first pre-stage coil unit may include a first pre-stage sub-coil 211, and the first post-stage coil unit includes a first post-stage sub-coil 221. The first pre-stage sub-coil 211 and the first post-stage sub-coil 221 are coupled to each other. A first pre-stage amplification branch is connected to a first terminal of the first pre-stage sub-coil 211, and a second pre-stage amplification branch is connected to a second terminal of the first pre-stage sub-coil 211. The first post-stage sub-coil 221 is connected to the interstage RF amplifier circuit.

[0033] For example, such as Figure 2 As described in (b), in at least one embodiment, the first pre-stage coil unit includes a first pre-stage sub-coil 211 and a second pre-stage sub-coil 212, and the first post-stage coil unit includes a first post-stage sub-coil 221 and a second post-stage sub-coil 222, wherein the first pre-stage sub-coil 211 is coupled to the first post-stage sub-coil 221, and the second pre-stage sub-coil 212 is coupled to the second post-stage sub-coil 222.

[0034] The first preamplifier branch 11 is a preamplifier branch for amplifying received radio frequency signals. This first preamplifier branch may include an amplifying transistor, an input matching network, a bias circuit, an output matching network, or a power supply network.

[0035] The second preamplifier branch 12 is a preamplifier branch for amplifying the received radio frequency signal. This second preamplifier branch may include an amplifying transistor, an input matching network, a bias circuit, an output matching network, or a power supply network.

[0036] In at least one embodiment, the first preamplifier branch 11 and the second preamplifier branch 12 are respectively used to receive different radio frequency signals and amplify them respectively. For example, the first preamplifier branch 11 is configured to receive and amplify radio frequency signals of a first frequency band, and the second preamplifier branch 12 is configured to receive and amplify radio frequency signals of a second frequency band. In at least one embodiment, the first preamplifier branch 11 and the second preamplifier branch 12 do not operate simultaneously.

[0037] One end of the first ground path 51 is connected to the first end of the first preamplifier coil unit, and the other end is configured to be grounded. The first ground path 51 is configured to form a ground path when the second preamplifier branch is working, and to be in a high-resistance state when the second preamplifier branch is not working.

[0038] In at least one embodiment, the first ground path 51 may be constituted by a radio frequency switch. For example, the first ground path 51 includes a first switch, one end of which is connected to a first end of the first preamp coil unit, and the other end of which is configured to be grounded.

[0039] One end of the second ground path 52 is connected to the first end of the second preamplifier coil unit, and the other end is configured to be grounded. It is configured to form a ground path when the first preamplifier branch is working, and to be in a high-resistance state when the first preamplifier branch is not working.

[0040] In at least one embodiment, the second ground path 52 may be constituted by a radio frequency switch. For example, the second ground path 52 includes a second switch, one end of which is connected to the second end of the first preamplifier coil unit, and the other end of which is configured to be grounded.

[0041] The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. A first end of the second post-stage coil unit is connected to a first output path, and a second end of the second post-stage coil unit is connected to the second output path. With attachment Figure 1For example, the second transformer network 31 includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. In at least one embodiment, the second pre-stage coil unit may include at least one coil, or the second pre-stage coil unit may include at least two coils connected in series, or the second pre-stage coil unit may include at least two coils connected in parallel, or the second pre-stage coil unit may include multiple coils, which are partially connected in series and partially connected in parallel. In at least one embodiment, the second post-stage coil unit may include at least one coil, or the second post-stage coil unit may include at least two coils connected in series, or the second post-stage coil unit may include at least two coils connected in parallel, or the second post-stage coil unit may include multiple coils, which are partially connected in series and partially connected in parallel.

[0042] The second pre-stage coil unit and the second post-stage coil unit are coupled to each other. The coupling between the second pre-stage coil unit and the second post-stage coil unit can be single-coupling-center coupling or multi-coupling-center (two or more) coupling.

[0043] For example, such as Figure 3 As described in (a), in at least one embodiment, the first pre-stage coil unit may include a first pre-stage sub-coil 211, and the first post-stage coil unit includes a first post-stage sub-coil 321. The first pre-stage sub-coil 311 and the first post-stage sub-coil 321 are coupled to each other. A first pre-stage amplification branch is connected to a first terminal of the first pre-stage sub-coil 311, and a second pre-stage amplification branch is connected to a second terminal of the first pre-stage sub-coil 311. The first post-stage sub-coil 321 is connected to the interstage RF amplifier circuit.

[0044] For example, such as Figure 3 As described in (b), in at least one embodiment, the first pre-stage coil unit includes a first pre-stage sub-coil 311 and a second pre-stage sub-coil 312, and the first post-stage coil unit includes a first post-stage sub-coil 321 and a second post-stage sub-coil 322, wherein the first pre-stage sub-coil 311 is coupled to the first post-stage sub-coil 321, and the second pre-stage sub-coil 312 is coupled to the second post-stage sub-coil 322.

[0045] An interstage RF amplifier circuit 40 is connected between the first post-stage coil unit and the second pre-stage coil unit, and is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch. The interstage RF amplifier circuit 40 can be a single-ended power amplifier, a differential power amplifier, a Doherty power amplifier, or a balanced amplifier, etc. It is understood that the interstage RF amplifier circuit can be a single-stage power amplifier circuit or a multi-stage (two or more stages) power amplifier circuit.

[0046] In at least one embodiment, the interstage RF amplifier circuit 40 includes a first interstage RF amplifier branch and a second interstage RF amplifier branch. The input terminal of the first interstage RF amplifier branch is connected to a first terminal of the first subsequent stage coil unit, and the output terminal of the first interstage RF amplifier branch is connected to a first terminal of the second preceding stage coil unit. Similarly, the input terminal of the second interstage RF amplifier branch is connected to a first terminal of the first subsequent stage coil unit, and the output terminal of the first interstage RF amplifier branch is connected to a first terminal of the second preceding stage coil unit.

[0047] One end of the third ground path 61 is connected to the first end of the second subsequent coil unit or to the first output path, and the other end is configured to be grounded. The third ground path 61 is configured to form a ground path when the second preamplifier branch is working, and to be in a high-impedance state when the second preamplifier branch is not working.

[0048] In at least one embodiment, the third ground path 61 may be constituted by a radio frequency switch. For example, the first ground path 61 includes a third switch, one end of which is connected to the first end of the second subsequent coil unit or to the first output path, and the other end is configured to be grounded.

[0049] One end of the fourth ground path 62 is connected to the second end of the second subsequent coil unit or to the second output path, and the other end is configured to be grounded. The fourth ground path 62 is configured to form a ground path when the first preamplifier branch is working, and to be in a high-impedance state when the first preamplifier branch is not working.

[0050] In at least one embodiment, the fourth ground path 62 may be constituted by a radio frequency switch. For example, the fourth ground path 62 includes a fourth switch, one end of which is connected to the second end of the second subsequent coil unit or to the second output path, and the other end is configured to be grounded.

[0051] In this embodiment, the switching of the preamplifier branch and the output path is realized through four paths to ground, and the interstage RF amplifier circuit is reused in different modes, thereby achieving both integration and overall power performance.

[0052] In at least one embodiment, in a first operating mode, the third switch is open, the fourth switch is closed, the first switch is open, the second switch is closed, the second preamplifier branch is not operating, the first preamplifier branch is operating, and the interstage RF amplifier circuit is operating. In a second operating mode, the third switch is closed, the fourth switch is open, the first switch is closed, the second switch is open, the second preamplifier branch is operating, the interstage RF amplifier circuit is operating, and the first preamplifier branch is not operating.

[0053] The first operating mode and the second operating mode can be different operating modes. These different operating modes can be different power modes, different frequency modes, etc. In at least one embodiment, the first operating mode can be a first power mode, and the second operating mode can be a second power mode, wherein the power output of the RF power amplifier in the first power mode and the second power mode are different; optionally, the power output in the first power mode is greater than the power output in the second power mode. In at least one embodiment, the first operating mode can be a first frequency mode, and the second operating mode can be a second frequency mode, wherein the RF power amplifier in the first power mode and the second power mode processes RF signals in different frequency bands.

[0054] For example, see Figure 4 In the first operating mode, the third switch 611 is open, the fourth switch 621 is closed, the first switch 511 is open, and the second switch 521 is closed. In this mode, the second preamplifier branch 12 is not working, the first preamplifier branch 11 is working, the interstage RF amplifier circuit 40 is working, and the RF signal amplified by the interstage RF amplifier circuit 40 is output through the first output path.

[0055] For example, see Figure 5 In the second operating mode, the third switch 611 is closed, the fourth switch 621 is open, the first switch 511 is closed, and the second switch 521 is open. In this mode, the second preamplifier branch 12 is operational, the first preamplifier branch 11 is inactive, the interstage RF amplifier circuit 40 is operational, and the RF signal amplified by the interstage RF amplifier circuit 40 is output via the second output path.

[0056] Understandably, in the accompanying drawings of the instruction manual, an "×" symbol indicates that the switch is open, and a "√" symbol indicates that the switch is closed.

[0057] In this embodiment, by controlling the closing and opening of four switches in different operating modes, the reuse of some devices and the independence of some devices in different operating modes are realized. The input and output loads are adapted to the characteristics of the corresponding operating modes. The transformer network and power amplifier transistor array, which occupy a large area, are reused, thus achieving a good balance between integration and performance.

[0058] In at least one embodiment, one end of the first switch is connected to the non-DC path node of the first preamplifier branch, and one end of the second switch is connected to the non-DC path node of the second preamplifier branch.

[0059] In this context, a non-DC path node is a node through which no DC signal passes. For example, a DC blocking capacitor is used to block the DC signal. Thus, connecting the first and second switches in a non-DC path node reduces the introduction of additional losses.

[0060] In at least one embodiment, the first preamplifier branch includes a first preamplifier transistor and a first capacitor, the first capacitor being connected between the output terminal of the first preamplifier transistor and a first terminal of the first preamplifier coil unit, and one end of the first switch being connected between the first capacitor and the first terminal of the first preamplifier coil unit. And / or, The second preamplifier branch includes a second preamplifier transistor and a second capacitor. The second capacitor is connected between the output terminal of the second preamplifier transistor and the first terminal of the second preamplifier coil unit. One end of the second switch is connected between the second capacitor and the first terminal of the second preamplifier coil unit.

[0061] In this embodiment, with Figure 6 For example, the first preamplifier branch 11 includes a first preamplifier transistor unit 111 and a first capacitor 112. The first capacitor 112 is connected between the output terminal of the first preamplifier transistor 111 and the first terminal of the first preamplifier coil unit 21. Specifically, the first terminal of the first capacitor 112 is connected to the output terminal of the first preamplifier transistor unit 111, and the second terminal of the first capacitor 112 is connected to the first terminal of the first preamplifier coil unit. One end of the first switch 511 is connected between the first capacitor and the first terminal of the first preamplifier coil unit. Specifically, one end of the first switch 511 is connected between the second terminal of the first capacitor and the first terminal of the first preamplifier coil unit.

[0062] The first preamplifier transistor unit 111 can be formed by connecting one or more amplifying transistors in series or parallel, or by other conventional implementation methods in the art, which are not limited herein. In at least one embodiment, the amplifying transistors constituting the first preamplifier transistor unit 111 can be bipolar junction transistors (BJTs) or field-effect transistors (FETs), etc. In at least one embodiment, the amplifying transistors constituting the first preamplifier transistor unit 111 are heterojunction transistors (HBTs). For example, the amplifying transistors constituting the first preamplifier transistor unit 111 are heterojunction transistors implemented using GaAs technology.

[0063] In at least one embodiment, the amplifying transistors constituting the first preamplifier transistor unit 111 are NPN type transistors. For example... Figure 6 As shown, the first preamplifier transistor unit 111 can be composed of one or more NPN transistors connected in parallel. The base of the first preamplifier transistor unit 111 receives the input radio frequency signal, amplifies it, and outputs it through its collector. The first capacitor 112 is connected between the collector of the first preamplifier transistor 111 and the first terminal of the first preamplifier coil unit 21.

[0064] In at least one embodiment, the first preamplifier branch 11 further includes a first inductor 113, the first end of the first inductor 113 being configured to receive a first supply voltage, and the second end of the first inductor 113 being connected to the output terminal of the first preamplifier transistor unit 111.

[0065] In this embodiment, with Figure 6 For example, the second preamplifier branch 12 includes a second preamplifier transistor unit 121 and a second capacitor 122. The second capacitor 122 is connected between the output terminal of the second preamplifier transistor 121 and the first terminal of the second preamplifier coil unit 21. Specifically, the first terminal of the second capacitor 122 is connected to the output terminal of the second preamplifier transistor unit 121, and the second terminal of the second capacitor 122 is connected to the second terminal of the first preamplifier coil unit. One end of the second switch 521 is connected between the second capacitor and the first terminal of the second preamplifier coil unit. Specifically, one end of the second switch 521 is connected between the second terminal of the second capacitor and the second terminal of the first preamplifier coil unit.

[0066] The second preamplifier transistor unit 121 can be formed by connecting one or more amplifying transistors in series or parallel, or by other conventional implementation methods in the art, which are not limited herein. In at least one embodiment, the amplifying transistors constituting the second preamplifier transistor unit 121 can be bipolar junction transistors (BJTs) or field-effect transistors (FETs), etc. In at least one embodiment, the amplifying transistors constituting the second preamplifier transistor unit 121 are heterojunction transistors (HBTs). For example, the amplifying transistors constituting the second preamplifier transistor unit 121 are heterojunction transistors implemented using GaAs technology.

[0067] In at least one embodiment, the amplifying transistors constituting the second preamplifier transistor unit 121 are NPN type transistors. For example... Figure 6 As shown, the second preamplifier transistor unit 121 can be composed of one or more NPN transistors connected in parallel. The base of the second preamplifier transistor unit 121 receives the input radio frequency signal, amplifies it, and outputs it through its collector. The second capacitor 122 is connected between the collector of the second preamplifier transistor 111 and the first terminal of the second preamplifier coil unit 21.

[0068] In at least one embodiment, the second preamplifier branch 12 further includes a second inductor 123, the first end of the second inductor 123 being configured to receive a second supply voltage, and the second end of the second inductor 123 being connected to the output terminal of the second preamplifier transistor unit 121.

[0069] Understandably, the first supply voltage and the second supply voltage can be the same or different supply voltages. These different supply voltages can be voltages of different values ​​or voltages from different sources. In at least one embodiment, the first supply voltage is a power supply voltage or a battery voltage, and the second supply voltage is a power supply voltage or a battery voltage. In at least one embodiment, the first supply voltage is a power supply voltage, and the second supply voltage is a battery voltage.

[0070] In this embodiment, the first preamplifier branch includes a first preamplifier transistor and a first capacitor. The first capacitor is connected between the output terminal of the first preamplifier transistor and the first terminal of the first preamplifier coil unit. One end of the first switch is connected between the first capacitor and the first terminal of the first preamplifier coil unit. The second preamplifier branch includes a second preamplifier transistor and a second capacitor. The second capacitor is connected between the output terminal of the second preamplifier transistor and the first terminal of the second preamplifier coil unit. One end of the second switch is connected between the second capacitor and the first terminal of the second preamplifier coil unit. Through the isolation of the switches, the mutual interference between the circuits of the first and second preamplifier branches is effectively reduced. Furthermore, the isolation between the first and second switches through their corresponding capacitors also reduces the overall loss of the RF power amplifier.

[0071] In at least one embodiment, in the first operating mode, the first preamplifier branch is configured to amplify a radio frequency signal in a first frequency band, and in the second operating mode, the second preamplifier branch is configured to amplify a radio frequency signal in a second frequency band, wherein the first frequency band and the second frequency band are at least partially different.

[0072] In at least one embodiment, the frequency ranges of the first frequency band and the second frequency band largely overlap. For example, both belong to the low-band (LB), the mid-band (MB), or the high-band (HB), and the first radio frequency signal and the second radio frequency signal correspond to different generations of communication technologies (e.g., 2G, 3G, 4G, 5G, etc.).

[0073] As an example, the upper frequency limits of both the first and second frequency bands are less than or equal to 1 GHz, meaning that both the first and second frequency bands are low-frequency (LB) bands, such as the B28, B26, and B8 bands. In this case, the first frequency band can be a 4 GHz / 5 GHz LB band, and the second frequency band can be a 2 GHz LB band.

[0074] As another example, the lower frequency limits of the first and second frequency bands are greater than 1 GHz and less than or equal to 3 GHz. That is, both the first and second frequency bands are mid-band MB, such as B1, B3, B34, B39, etc. In this case, the first frequency band can be a 4 GHz / 5 GHz MB band, and the second frequency band can be a 2 GHz MB band.

[0075] In at least one embodiment, the interstage RF amplifier circuit is a differential amplifier circuit or a single-ended amplifier circuit.

[0076] In at least one embodiment, the interstage RF amplifier circuit includes a first interstage amplifier transistor unit and a second interstage amplifier transistor unit. The input terminal of the first interstage amplifier transistor unit is connected to a first terminal of the first post-stage coil unit, the output terminal of the first interstage amplifier transistor unit is connected to a first terminal of the second pre-stage coil unit, the input terminal of the second interstage amplifier transistor unit is connected to a second terminal of the first post-stage coil unit, and the output terminal of the second interstage amplifier transistor unit is connected to a second terminal of the second pre-stage coil unit.

[0077] For example, with Figure 7 For example, the input terminal of the first interstage amplification transistor unit 411 is connected to the first terminal of the first post-stage coil unit, and the output terminal of the first interstage amplification transistor unit 411 is connected to the first terminal of the second pre-stage coil unit.

[0078] Optionally, the interstage RF amplifier circuit may further include any one or more of a matching unit, a bias unit, a power supply unit, etc. In at least one embodiment, the interstage RF amplifier circuit further includes a first input matching unit 412. Figure 7 As shown, the first terminal of the first input matching unit 412 is connected to the first terminal of the first subsequent stage coil unit, and the second terminal of the first input matching unit 412 is connected to the input terminal of the first interstage amplification transistor unit 411. The first input matching unit 412 may be composed of at least one passive element, such as at least one of an inductor, capacitor, or resistor.

[0079] In at least one embodiment, the interstage RF amplifier circuit further includes a first output matching unit 413. For example... Figure 7 As shown, the first terminal of the first output matching unit 413 is connected to the output terminal of the first interstage amplification transistor unit 411, and the second terminal of the first output matching unit 413 is connected to the first terminal of the second pre-stage coil unit. The first output matching unit 413 may be composed of at least one passive component, such as at least one of an inductor, capacitor, or resistor.

[0080] The first-stage interstage amplifying transistor unit can be formed by connecting one or more amplifying transistors in series or parallel, or by other conventional implementation methods in the art, without limitation. In at least one embodiment, the amplifying transistor constituting the first-stage interstage amplifying transistor unit can be a bipolar junction transistor (BJT) or a field-effect transistor (FET), etc. In at least one embodiment, the amplifying transistor constituting the first-stage interstage amplifying transistor unit is a heterojunction transistor (HBT). Exemplarily, the amplifying transistor constituting the first-stage interstage amplifying transistor unit is a heterojunction transistor implemented using GaAs technology.

[0081] In at least one implementation, the amplifying transistor constituting the first-stage inter-amplifier transistor unit is an NPN transistor. The first-stage inter-amplifier transistor unit can be composed of one or more NPN transistors connected in parallel. The base of the first-stage inter-amplifier transistor unit receives the input radio frequency signal, amplifies it, and outputs it through its collector.

[0082] The input terminal of the second interstage amplification transistor unit 421 is connected to the second terminal of the first post-stage coil unit, and the output terminal of the second interstage amplification transistor unit 421 is connected to the second terminal of the second pre-stage coil unit.

[0083] Optionally, the interstage RF amplifier circuit may further include any one or more of a matching unit, a bias unit, a power supply unit, etc. In at least one embodiment, the interstage RF amplifier circuit further includes a second input matching unit 422. Figure 7 As shown, the first terminal of the second input matching unit 422 is connected to the second terminal of the first subsequent stage coil unit, and the second terminal of the second input matching unit 422 is connected to the input terminal of the second-stage interstage amplification transistor unit 421. The second input matching unit 422 may be composed of at least one passive element, such as at least one of an inductor, capacitor, or resistor.

[0084] In at least one embodiment, the interstage RF amplifier circuit further includes a second output matching unit 423. For example... Figure 7 As shown, the first terminal of the second output matching unit 423 is connected to the output terminal of the second interstage amplification transistor unit 421, and the second terminal of the second output matching unit 423 is connected to the second terminal of the second pre-stage coil unit. The second output matching unit 423 may be composed of at least one passive element, such as at least one of an inductor, a capacitor, or a resistor.

[0085] The second-stage interstage amplifying transistor unit can be formed by connecting one or more amplifying transistors in series or parallel, or by other conventional implementation methods in the art, without limitation. In at least one embodiment, the amplifying transistor constituting the second-stage interstage amplifying transistor unit can be a bipolar junction transistor (BJT) or a field-effect transistor (FET), etc. In at least one embodiment, the amplifying transistor constituting the second-stage interstage amplifying transistor unit is a heterojunction transistor (HBT). Exemplarily, the amplifying transistor constituting the second-stage interstage amplifying transistor unit is a heterojunction transistor implemented using GaAs technology.

[0086] In at least one implementation, the amplifying transistor constituting the second-stage inter-amplifier transistor unit is an NPN transistor. The second-stage inter-amplifier transistor unit can be composed of one or more NPN transistors connected in parallel. The base of the second-stage inter-amplifier transistor unit receives the input radio frequency signal, amplifies it, and outputs it through its collector.

[0087] In this embodiment, the interstage RF amplifier circuit includes a first interstage amplification transistor unit and a second interstage amplification transistor unit. Combined with the first transformer network and the second transformer network, it is configured as a differential power amplifier, enabling the multiplexed interstage RF amplifier circuit to achieve higher power and ensuring that the overall RF power amplifier achieves higher performance.

[0088] In at least one embodiment, the first pre-stage coil unit includes a first pre-stage sub-coil and a second pre-stage sub-coil, and the first post-stage coil unit includes a first post-stage sub-coil and a second post-stage sub-coil, wherein the first pre-stage sub-coil is coupled to the first post-stage sub-coil, and the second pre-stage sub-coil is coupled to the second post-stage sub-coil.

[0089] For example, such as Figure 8 As shown, the first pre-stage coil unit includes a first pre-stage sub-coil 211 and a second pre-stage sub-coil 212, and the first post-stage coil unit includes a first post-stage sub-coil 221 and a second post-stage sub-coil 222. The first pre-stage sub-coil 211 is coupled to the first post-stage sub-coil 221, and the second pre-stage sub-coil 212 is coupled to the second post-stage sub-coil 222.

[0090] In at least one embodiment, one end of the first preamp sub-coil is connected to one end of the first switch, the other end of the first preamp sub-coil is connected to one end of the second preamp sub-coil, and the other end of the second preamp sub-coil is connected to one end of the second switch.

[0091] like Figure 8 As shown, one end of the first preamplifier sub-coil 211 is connected to one end of the first switch 511, the other end of the first preamplifier sub-coil 211 is connected to one end of the second preamplifier sub-coil 212, and the other end of the second preamplifier sub-coil 212 is connected to one end of the second switch 521.

[0092] In at least one embodiment, the first pre-stage coil unit includes a fifth pre-stage sub-coil, and the first post-stage coil unit includes a fifth post-stage sub-coil, wherein the fifth pre-stage sub-coil is coupled to the fifth post-stage sub-coil.

[0093] In at least one embodiment, one end of the fifth preamplifier sub-coil is connected to one end of the first switch, and the other end of the fifth preamplifier sub-coil is connected to one end of the second switch.

[0094] In at least one embodiment, both ends of the fifth post-stage sub-coil are connected to the inter-stage RF amplifier circuit. Exemplarily, the first end of the fifth post-stage sub-coil is connected to the input terminal of the first inter-stage amplifier transistor unit, and the second end of the fifth post-stage sub-coil is connected to the input terminal of the second inter-stage amplifier transistor unit.

[0095] In at least one embodiment, the second pre-stage coil unit includes a third pre-stage sub-coil and a fourth pre-stage sub-coil, and the second post-stage coil unit includes a third post-stage sub-coil and a fourth post-stage sub-coil, wherein the third pre-stage sub-coil is coupled to the third post-stage sub-coil, and the fourth pre-stage sub-coil is coupled to the fourth post-stage sub-coil. One end of the third post-stage sub-coil is connected to one end of the third switch, the other end of the third post-stage sub-coil is connected to one end of the fourth post-stage sub-coil, and the other end of the fourth post-stage sub-coil is connected to one end of the fourth switch.

[0096] In at least one embodiment, the second pre-stage coil unit includes a sixth pre-stage sub-coil, and the second post-stage coil unit includes a sixth post-stage sub-coil, the sixth pre-stage sub-coil being coupled to the sixth post-stage sub-coil. Exemplarily, as... Figure 9 As shown, the second pre-stage coil unit includes a sixth pre-stage sub-coil 313, and the second post-stage coil unit includes a sixth post-stage sub-coil 323. The sixth pre-stage sub-coil 313 is coupled to the sixth post-stage sub-coil 323.

[0097] In at least one embodiment, one end of the sixth subsequent sub-coil is connected to one end of the third switch, and the other end of the sixth subsequent sub-coil is connected to one end of the fourth switch.

[0098] In at least one embodiment, both ends of the sixth pre-stage sub-coil are connected to the inter-stage RF amplifier circuit. Exemplarily, the first end of the sixth pre-stage sub-coil is connected to the output terminal of the first inter-stage amplifier transistor unit, and the second end of the fifth post-stage sub-coil is connected to the output terminal of the second inter-stage amplifier transistor unit.

[0099] In at least one embodiment, the radio frequency power amplifier further includes: The number of amplifying transistors in the first preamplifier branch is less than the number of amplifying transistors in any amplifying branch of the interstage RF amplifier circuit, and / or the number of amplifying transistors in the second preamplifier branch is less than the number of amplifying transistors in any amplifying branch of the interstage RF amplifier circuit.

[0100] In this embodiment, the number of amplifying transistors in the first pre-amplifier branch is less than the number of amplifying transistors in any amplifying branch of the inter-stage RF amplifier circuit, and / or, the number of amplifying transistors in the second pre-amplifier branch is less than the number of amplifying transistors in any amplifying branch of the inter-stage RF amplifier circuit. This differentiated setup between the pre-amplifier and inter-stage stages allows for a greater number of multiplexed amplifying transistors, better ensuring both integration density and performance.

[0101] In at least one embodiment, the radio frequency power amplifier further includes: The size of the amplifying transistor array in the first preamplifier branch is smaller than the size of the amplifying transistor array in any amplifying branch of the interstage RF amplifier circuit, and / or the size of the amplifying transistor array in the second preamplifier branch is smaller than the size of the amplifying transistor array in any amplifying branch of the interstage RF amplifier circuit.

[0102] In this context, an amplifying transistor array refers to an array composed of amplifying transistors in a corresponding amplification branch. The size of an amplifying transistor array can be determined by the sum of the sizes of the transistors in the array, or by the area occupied by the amplifying transistor array on the chip layout.

[0103] In this embodiment, the size of the amplifying transistor array in the first pre-amplifier branch is smaller than the size of the amplifying transistor array in any amplifying branch of the inter-stage RF amplifier circuit, and / or, the size of the amplifying transistor array in the second pre-amplifier branch is smaller than the size of the amplifying transistor array in any amplifying branch of the inter-stage RF amplifier circuit. This differentiated arrangement of the pre-amplifier and inter-stage amplifying transistor arrays allows for a larger area of ​​the multiplexed amplifying transistor array, better ensuring both integration density and performance.

[0104] In at least one embodiment, the interstage RF amplifier circuit includes a switchable harmonic matching network configured to switch between different harmonic matching networks based on different operating modes.

[0105] The switchable harmonic matching network processes the Xth harmonic of the processed radio frequency signal. Here, X is a natural number greater than 0. X can be an integer, such as 2, 3, 4, 5, 6, etc. X can also be a decimal, such as 0.5, 1.5, 2.5, 3.5, 4.5, etc. For example, when X is 2, the switchable harmonic matching network is configured to process the 2nd harmonic of the radio frequency signal processed by the interstage radio frequency amplifier circuit. When X is 3, the switchable harmonic matching network is configured to process the 3rd harmonic of the radio frequency signal processed by the interstage radio frequency amplifier circuit.

[0106] The switchable harmonic matching network is a harmonic matching network that includes capacitors and inductors, and further, the capacitance and / or inductance values ​​are switchable. For example, the switchable harmonic matching network includes a fixed capacitor and a switchable inductor, or it includes a fixed inductor and a switchable capacitor. Understandably, the specific number of switchable harmonic matching circuits in the switchable harmonic network can be set according to the architecture of the interstage RF amplifier circuit. For example, if the interstage RF amplifier circuit includes one amplification branch, the corresponding switchable harmonic matching circuit can be one; if the interstage RF amplifier circuit includes two amplification branches, the corresponding switchable harmonic matching circuit can be two.

[0107] The switchable harmonic matching network is configured to switch between different harmonic matching networks based on different operating modes. Specifically, the switchable harmonic matching network can present different harmonic matching networks in a first operating mode and a second operating mode.

[0108] In this embodiment, by setting a corresponding switchable harmonic matching network in the interstage RF amplifier circuit, the harmonic performance under different operating modes can be adapted, thereby improving the overall harmonic matching performance of the RF power amplifier.

[0109] In at least one embodiment, the radio frequency power amplifier includes a first harmonic switching circuit and a second harmonic switching circuit. A first terminal of the first harmonic switching circuit is connected to the output terminal of the first interstage amplification transistor unit, and a second terminal of the first harmonic switching circuit is configured to be grounded. A first terminal of the second harmonic switching circuit is connected to the output terminal of the second interstage amplification transistor unit, and a second terminal of the second harmonic switching circuit is configured to be grounded.

[0110] The first harmonic switching circuit includes a first harmonic capacitor and a first harmonic inductor, which are connected in series between a first terminal and a second terminal of the first harmonic switching circuit. Optionally, the first harmonic switching circuit further includes a third harmonic capacitor and a first switching switch, wherein the third harmonic capacitor and the first switching switch are connected in series and then connected in parallel with the first harmonic capacitor. Optionally, the first harmonic switching circuit further includes a third harmonic inductor and a second switching switch, wherein the third harmonic inductor and the second switching switch are connected in series and then connected in parallel with the first harmonic inductor.

[0111] The second harmonic switching circuit includes a second harmonic capacitor and a second harmonic inductor, which are connected in series between the first and second terminals of the second harmonic switching circuit. Optionally, the second harmonic switching circuit further includes a fourth harmonic capacitor and a third switching switch, which are connected in series and then connected in parallel with the second harmonic capacitor. Optionally, the second harmonic switching circuit further includes a fourth harmonic inductor and a fourth switching switch, which are connected in series and then connected in parallel with the second harmonic inductor.

[0112] In at least one embodiment, the first harmonic switching circuit includes a first harmonic capacitor, a first harmonic inductor, a first coupling inductor, and a first coupling switch, wherein the first harmonic capacitor and the first harmonic inductor are connected in series between a first terminal and a second terminal of the first harmonic switching circuit, the first coupling inductor is coupled to at least a portion of the first harmonic inductor, and the first coupling switch is connected to the first coupling inductor. And / or, The second harmonic switching circuit includes a second harmonic capacitor, a second harmonic inductor, a second coupling inductor, and a second coupling switch. The second harmonic capacitor and the second harmonic inductor are connected in series between the first terminal and the second terminal of the second harmonic switching circuit. The first coupling inductor is coupled to at least a portion of the second harmonic inductor, and the second coupling switch is connected to the second coupling inductor.

[0113] The first coupling inductor is coupled to at least a portion of the first harmonic inductor. Specifically, this may include the following situations: the first coupling inductor is coupled to a portion of the coil of the first harmonic inductor, or the first coupling inductor is coupled to all the coils of the first harmonic inductor.

[0114] In one specific embodiment, the first coupling inductor and the first harmonic inductor can be stacked and coupled. For example, the first harmonic inductor is disposed in a first metal layer, and the first coupling inductor is disposed in a second metal layer, with the longitudinal projection of the first coupling inductor at least partially covered by the longitudinal projection of the first harmonic inductor. Alternatively, the first harmonic inductor and the first coupling inductor can also be coupled in the same layer. For example, both the first coupling inductor and the first harmonic inductor are disposed in the same metal layer, with the traces of the first coupling inductor and the first harmonic inductor at least partially following each other. This embodiment does not specifically limit the winding method and winding shape of the first harmonic inductor and the first coupling inductor.

[0115] In at least one embodiment, the first coupling switch is connected to the first coupling inductor. The first coupling switch controls whether the branch containing the first coupling inductor is in an open-circuit state, thereby affecting the original actual inductance value of the first harmonic inductor coupled to the first coupling inductor. Specifically, when the first coupling switch is open, the branch containing the first coupling inductor is in an open-circuit state, and the equivalent total inductance of the first harmonic inductor is equal to the original actual inductance value of the first inductor. When the first coupling switch is closed, the branch containing the first coupling inductor is in a closed-circuit state, and the equivalent total inductance of the first harmonic inductor is less than the original actual inductance value of the first harmonic inductor.

[0116] In at least one embodiment, a first end of the first coupling switch is connected to a first end of the first coupling inductor, and a second end of the first coupling switch is connected to a second end of the first coupling inductor.

[0117] In another specific embodiment, the first end of the first coupling switch is connected to the first end of the first coupling inductor, and the second ends of both the first coupling switch and the first coupling inductor are grounded, forming a grounding branch between the first coupling switch and the first coupling inductor. The second ends of the first coupling switch and the second ends of the first coupling inductor can be grounded separately, or they can be connected to form a common node and then grounded together.

[0118] The second coupling inductor is coupled to at least a portion of the second harmonic inductor. Specifically, this may include the following situations: the second coupling inductor is coupled to a portion of the coil of the second harmonic inductor, or the second coupling inductor is coupled to all the coils of the first harmonic inductor.

[0119] In one specific embodiment, the second coupled inductor and the second harmonic inductor can be stacked and coupled. For example, the second harmonic inductor is disposed in the first metal layer, and the second coupled inductor is disposed in the second metal layer, with the longitudinal projection of the second coupled inductor at least partially covered by the longitudinal projection of the second harmonic inductor. Alternatively, the second harmonic inductor and the second coupled inductor can also be coupled in the same layer. For example, both the second coupled inductor and the second harmonic inductor are disposed in the same metal layer, with the traces of the second coupled inductor and the second harmonic inductor at least partially following each other. This embodiment does not specifically limit the winding method and winding shape of the first harmonic inductor and the second coupled inductor.

[0120] In at least one embodiment, the second coupling switch is connected to the second coupling inductor. The second coupling switch controls whether the branch containing the second coupling inductor is in an open-circuit state, thereby affecting the original actual inductance value of the second harmonic inductor coupled to the second coupling inductor. Specifically, when the second coupling switch is open, the branch containing the second coupling inductor is in an open-circuit state, and the equivalent total inductance of the second harmonic inductor is equal to the original actual inductance value of the second inductor. When the second coupling switch is closed, the branch containing the second coupling inductor is in a closed-circuit state, and the equivalent total inductance of the second harmonic inductor is less than the original actual inductance value of the second harmonic inductor.

[0121] In at least one embodiment, the first end of the second coupling switch is connected to the first end of the second coupling inductor, and the second end of the second coupling switch is connected to the second end of the second coupling inductor.

[0122] In another specific embodiment, the first end of the second coupling switch is connected to the first end of the second coupling inductor, and the second ends of both the second coupling switch and the second coupling inductor are grounded, forming a grounding branch between the second coupling switch and the second coupling inductor. The second ends of the second coupling switch and the second coupling inductor can be grounded separately, or they can be connected to form a common node and then grounded together.

[0123] In at least one embodiment, this application provides a radio frequency power amplifier, comprising: The first transformer network includes a first front-stage coil unit and a first rear-stage coil unit that are coupled to each other. The first preamplifier branch is connected to the first end of the first preamplifier coil unit. The first preamplifier branch includes a first preamplifier transistor and a first capacitor. The first capacitor is connected between the output end of the first preamplifier transistor and the first end of the first preamplifier coil unit. The second preamplifier branch is connected to the second end of the first preamplifier coil unit. The second preamplifier branch includes a second preamplifier transistor and a second capacitor. The second capacitor is connected between the output end of the second preamplifier transistor and the first end of the second preamplifier coil unit. The first switch has one end connected between the first capacitor and the first end of the first pre-stage coil unit, and the other end configured to be grounded. The second switch has one end connected between the second capacitor and the first end of the second pre-coil unit, and the other end configured to be grounded. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage RF amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch, wherein the size of the amplifying transistor array in the first pre-stage amplification branch is smaller than the size of the amplifying transistor array in any amplification branch of the interstage RF amplifier circuit, and / or the size of the amplifying transistor array in the second pre-stage amplification branch is smaller than the size of the amplifying transistor array in any amplification branch of the interstage RF amplifier circuit; The first switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the first output path; The second switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the second output path.

[0124] In this embodiment, multiple switches are used to switch between the preamplifier branch and the output path. The first and second switches are connected between the corresponding capacitor and the preamplifier coil unit, reducing the additional losses caused by the first and second switches. The amplifying transistor array in any amplifying branch of the multiplexed interstage RF amplifier circuit is larger than the amplifying transistor array in the preamplifier branch, achieving more efficient device reuse within a limited chip area. Moreover, the output path is switched through the first and second switching networks, which better guarantees the output performance. Through the combined effect of the above technical features, the integration and performance of the RF power amplifier in multi-mode RF power amplification scenarios are guaranteed.

[0125] In at least one embodiment, this application provides a radio frequency power amplifier, comprising: The first transformer network includes a first front-stage coil unit and a first rear-stage coil unit that are coupled to each other. A first preamplifier branch is connected to a first terminal of the first preamplifier coil unit. The first preamplifier branch includes a first preamplifier transistor, a first capacitor, and a first inductor. A first terminal of the first capacitor is connected to the output terminal of the first preamplifier transistor, and a second terminal of the first capacitor is connected to the first terminal of the first preamplifier coil unit. A first terminal of the first inductor is configured to receive a first supply voltage, and a second terminal of the first inductor is connected between the output terminal of the first preamplifier transistor unit and the first terminal of the first capacitor. The second preamplifier branch is connected to the second end of the first preamplifier coil unit. The second preamplifier branch includes a second preamplifier transistor, a second capacitor, and a second inductor. The first end of the second capacitor is connected to the output end of the second preamplifier transistor, and the second end of the second capacitor is connected to the second end of the first preamplifier coil unit. The first end of the second inductor is configured to receive a second supply voltage, and the second end of the second inductor is connected between the output end of the second preamplifier transistor unit and the first end of the second capacitor. The first switch has one end connected between the first capacitor and the first end of the first pre-stage coil unit, and the other end configured to be grounded. The second switch has one end connected between the second capacitor and the first end of the second pre-stage coil unit, and the other end configured to be grounded.

[0126] In this embodiment, the mutual interference between the first and second preamplifier branches is effectively reduced by the isolation of the switches. The isolation of the corresponding capacitors isolates the first and second switches from the DC power supply, thereby reducing the additional losses introduced by the overall circuit while achieving the reuse of some components in the dual-mode RF power amplifier.

[0127] In at least one embodiment, the radio frequency power amplifier further includes: The second transformer network includes a second front-stage coil unit and a second rear-stage coil unit that are coupled to each other. An interstage radio frequency amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch.

[0128] As attached Figure 17As shown, in this embodiment, the first terminal of the second post-stage coil unit can be connected to the RF signal output terminal, and the second terminal is configured to be grounded. The interstage RF amplifier circuit is configured to amplify the signal processed by the first pre-stage amplifier branch and the signal processed by the second pre-stage amplifier branch. It can be understood that the interstage RF amplifier circuit amplifies only one of the signals processed by the first pre-stage amplifier branch or the signals processed by the second pre-stage amplifier branch at any given time.

[0129] In at least one embodiment, taking the amplification of 5 GHz MB (1710MHz-2025MHz) and 5 GHz HB (2300MHz-2700MHz) radio frequency signals by the first preamplifier branch and the second preamplifier branch respectively as examples, the appendix is ​​attached. Figure 18 Appendix Figure 19 Appendix Figure 20 and attached Figure 21 Simulation diagrams of parameters S11, S21, S12, and S22 of the RF power amplifier when amplifying 5G MB and 5G HB RF signals are shown respectively. The red line represents the simulation curve for 5G HB, and the blue line represents the simulation curve for 5G MB. (See attached diagram.) Figure 18-21 It is evident that the RF power amplifier maintains excellent performance within its corresponding operating frequency band, whether operating in the 5G MB band or the 5G HB band.

[0130] In at least one embodiment, the first supply voltage is a power supply voltage, and the second supply voltage is a battery voltage.

[0131] In at least one embodiment, the radio frequency power amplifier further includes: The third transformer network includes a third pre-stage coil unit and a third post-stage coil unit that are coupled to each other. The first end of the third post-stage coil unit is connected to the input end of the first pre-stage amplification branch, and the second end of the third post-stage coil unit is connected to the input end of the second pre-stage amplification branch. The ninth switch has its first end connected between the first end of the third post-stage coil unit and the input end of the first pre-stage amplification branch, and its second end configured to be grounded. The tenth switch has its first end connected between the second end of the third post-stage coil unit and the input end of the second pre-stage amplification branch, and its second end is configured to be grounded. The third preamplifier branch is connected to the first end of the third preamplifier coil unit.

[0132] In this embodiment, with Figure 10For example, the RF power amplifier further includes a third transformer network 91, which includes a third preamplifier coil unit and a third postamplifier coil unit coupled to each other. The first end of the third postamplifier coil unit is connected to the input end of the first preamplifier branch 11, and the second end of the third postamplifier coil unit is connected to the input end of the second preamplifier branch 12.

[0133] In at least one embodiment, the third pre-stage coil unit may include at least one coil, or the third pre-stage coil unit may include at least two coils connected in series, or the third pre-stage coil unit may include at least two coils connected in parallel, or the third pre-stage coil unit may include multiple coils, which are partially connected in series and partially connected in parallel. In at least one embodiment, the third post-stage coil unit may include at least one coil, or the third post-stage coil unit may include at least two coils connected in series, or the third post-stage coil unit may include at least two coils connected in parallel, or the third post-stage coil unit may include multiple coils, which are partially connected in series and partially connected in parallel.

[0134] The third pre-stage coil unit and the third post-stage coil unit are coupled to each other. The coupling between the third pre-stage coil unit and the third post-stage coil unit can be single-coupling-center coupling or multi-coupling-center (two or more) coupling.

[0135] The first terminal of the ninth switch 53 is connected between the first terminal of the third post-stage coil unit and the input terminal of the first pre-stage amplification branch, and the second terminal is configured to be grounded. The first terminal of the tenth switch 54 is connected between the second terminal of the third post-stage coil unit and the input terminal of the second pre-stage amplification branch, and the second terminal is configured to be grounded.

[0136] The third preamplifier branch 92 is connected to the first terminal of the third preamplifier coil unit. The third preamplifier branch 92 is a preamplifier branch for amplifying the received radio frequency signal. The third preamplifier branch may include an amplifying transistor, an input matching network, a bias circuit, an output matching network, or a power supply network.

[0137] In this embodiment, by setting a third transformer network and a third preamplifier branch before the first and second preamplifier branches, and adding corresponding switching switches (the ninth and tenth switches), an additional preamplifier stage can be set up to better adapt to the needs of high-gain scenarios.

[0138] In at least one embodiment, the radio frequency power amplifier further includes: An interstage radio frequency amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit that are coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path.

[0139] In at least one embodiment, the first preamplifier branch further includes a third capacitor, the first end of the third capacitor being connected to the input terminal of the first preamplifier transistor, the second end of the third capacitor being connected to the first end of the third post-amplifier coil unit, and the first end of the ninth switch being connected between the first end of the third post-amplifier coil unit and the second end of the third capacitor. The second preamplifier branch also includes a fourth capacitor. The first end of the fourth capacitor is connected to the input terminal of the second preamplifier transistor, and the second end of the fourth capacitor is connected to the second end of the third post-amplifier coil unit. The first end of the tenth switch is connected between the second end of the third post-amplifier coil unit and the second end of the fourth capacitor.

[0140] In at least one embodiment, in a first operating mode, the first preamplifier branch is operational, the second preamplifier branch is inoperable, the first switch is open, the second switch is closed, the ninth switch is open, and the tenth switch is closed; in a second operating mode, the first preamplifier branch is inoperable, the second preamplifier branch is operational, the first switch is closed, the second switch is open, the ninth switch is closed, and the tenth switch is open.

[0141] In at least one embodiment, the second terminal of the third preamplifier coil unit is configured to be grounded or configured to receive a supply voltage, or, it further includes a fourth preamplifier branch connected to the second terminal of the third preamplifier coil unit.

[0142] The fourth preamplifier branch is a preamplifier branch for amplifying the received radio frequency signal. This branch may include an amplifying transistor, an input matching network, a bias circuit, and an output matching network or power supply network.

[0143] In at least one embodiment, this application provides a radio frequency power amplifier, comprising: The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage radio frequency amplifier circuit is connected to the second pre-stage coil unit; The third switch has one end connected to the first end of the second subsequent coil unit or to the first output path, and the other end is configured to be grounded. The fourth switch has one end connected to the second end of the second subsequent coil unit or to the second output path, and the other end configured to be grounded; A first matching network is connected in the first output path, and a first end of the first matching network is connected to one end of the third switch, and a second end of the first matching network is connected to the first signal output terminal. The second matching network is connected in the second output path, and the first end of the second matching network is connected to one end of the fourth switch, and the second end of the second matching network is connected to the second signal output terminal.

[0144] like Figure 11 As shown, the first matching network 81 is connected in the first output path, and the first end of the first matching network 81 is connected to one end of the third switch 61, and the second end of the first matching network 81 is connected to the first signal output terminal. The first matching network 81 may be composed of at least one passive element, for example, the first matching network 81 may be composed of at least one of an inductor, a capacitor or a resistor.

[0145] The second matching network 82 is connected in the second output path, and the first end of the second matching network 82 is connected to one end of the fourth switch 62, and the second end of the second matching network 82 is connected to the second signal output terminal. The second matching network 82 may be composed of at least one passive element, for example, the second matching network 82 may be composed of at least one of an inductor, a capacitor or a resistor.

[0146] In at least one embodiment, the first matching network and the second matching network have different structures or parameters. By differentiating the structures or parameters of the first matching network and the second matching network, performance requirements under different modes can be better met.

[0147] In this embodiment, by multiplexing the interstage RF amplifier circuit and switching between different output paths through the third and fourth switches, and by setting the first and second matching networks to independently match different output paths, and by isolating another output path through the corresponding switches of different matching networks, the overall integration of the RF power amplifier and the performance realization under different modes are taken into account.

[0148] In at least one embodiment, the turns ratio of the second pre-stage coil unit and the second post-stage coil unit is greater than 0.5:1, and at least one passive element matching network is included between the interstage RF amplifier circuit and the second pre-stage coil unit, and between the second post-stage coil unit and the third switch and / or the fourth switch.

[0149] In this embodiment, by adjusting the turns ratio of the second pre-stage coil unit and the second post-stage coil unit, at least one passive component matching network is provided between the inter-stage RF amplifier circuit and the second pre-stage coil unit, and between the second post-stage coil unit and the third switch and / or the fourth switch, thereby better ensuring impedance matching performance under different operating modes.

[0150] In at least one embodiment, the first matching network includes a first capacitor connected in series in the first output path; The second matching network includes a second capacitor connected in series in the second output path.

[0151] In at least one embodiment, the turns ratio of the second pre-stage coil unit and the second post-stage coil unit is greater than 0.5:1 and less than or equal to 3:1, and the RF power amplifier further includes: A third matching network is connected in the first output path, and the first end of the third matching network is connected to the first end of the second subsequent coil unit, and the second end of the first matching network is connected to one end of the third switch. A fourth matching network is connected in the second output path, and the first end of the fourth matching network is connected to the second end of the second subsequent coil unit, and the second end of the fourth matching network is connected to one end of the fourth switch.

[0152] like Figure 12 As shown, the third matching network 83 is connected in the first output path, and the first end of the third matching network 83 is connected to the first end of the second subsequent coil unit, and the second end of the first matching network 83 is connected to one end of the third switch 61. The third matching network 83 may be composed of at least one passive element, for example, the third matching network 83 may be composed of at least one of an inductor, a capacitor or a resistor.

[0153] A fourth matching network 84 is connected in the second output path, with its first end connected to the second end of the second subsequent coil unit and its second end connected to one end of the fourth switch 62. The fourth matching network 84 may be composed of at least one passive element; for example, it may be composed of at least one of an inductor, a capacitor, or a resistor.

[0154] In at least one embodiment, the RF power amplifier further includes a first band selection switch network and / or a second band selection switch network, wherein the first signal output terminal is connected to the first band selection switch network and the second signal output terminal is connected to the second band selection switch network.

[0155] like Figure 13 As shown, the first signal output terminal is connected to the first frequency band selection switch network 91, and the second signal output terminal is connected to the second frequency band selection switch network 92.

[0156] The first frequency band selection switch network 91 includes at least one sub-switch, with one end of each sub-switch connected to the first signal output terminal and the other end connected to a corresponding output terminal for signal output. The second frequency band selection switch network 92 includes at least one sub-switch, with one end of each sub-switch connected to the second signal output terminal and the other end connected to a corresponding output terminal for signal output.

[0157] In at least one embodiment, there is no series switch in the first output path, and / or, there is no series switch in the second output path. Optionally, the first output path refers to the path between the first end of the second subsequent stage coil unit and the first frequency band selection switch network 91. The second output path refers to the path between the second end of the second subsequent stage coil unit and the second frequency band selection switch network 91. Alternatively, the first output path refers to the path between the first end of the second subsequent stage coil unit and the output end of the RF front-end section where the RF power amplifier is located. The second output path refers to the path between the second end of the second subsequent stage coil unit and the output end of the RF front-end section where the RF power amplifier is located.

[0158] In this embodiment, there are no series switches in the first output path, and / or no series switches in the second output path. This results in lower losses in the corresponding output paths, ensuring better performance.

[0159] In at least one embodiment, this application provides a radio frequency power amplifier, comprising: The first transformer network includes a first front-stage coil unit and a first rear-stage coil unit that are coupled to each other. The first preamplifier branch is connected to the first end of the first preamplifier coil unit; The second preamplifier branch is connected to the second end of the first preamplifier coil unit; The first switch has one end connected between the first capacitor and the first end of the first pre-stage coil unit, and the other end configured to be grounded. The second switch has one end connected between the second capacitor and the first end of the second pre-coil unit, and the other end configured to be grounded. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage radio frequency amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch. The first switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the first output path; The second switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the second output path.

[0160] In this embodiment, the switching of the preamplifier branch and the output path is realized by two switches, the interstage RF amplifier circuit is reused, and the output is output through two different output paths by two switching networks, thereby achieving both integration and overall power performance.

[0161] In at least one embodiment, the first switching network includes a third switch, one end of which is connected to a first end of the second subsequent coil unit or to a first output path, and the other end is configured to be grounded. The second switching network includes a fourth switch, one end of which is connected to the second end of the second subsequent coil unit or to the second output path, and the other end is configured to be grounded.

[0162] In at least one embodiment, the first switching network includes a first resonant capacitor, a first resonant inductor, and a fifth switch; The first end of the first resonant capacitor is connected in the first output path, and the second end is configured to be grounded. The first end of the first resonant inductor is connected in the first output path, and the second end is grounded through the fifth switch; The second switching network includes a second resonant capacitor, a second resonant inductor, and a sixth switch; The first end of the second resonant capacitor is connected in the second output path, and the second end is configured to be grounded; The first end of the second resonant inductor is connected in the second output path, and the second end is grounded through the sixth switch.

[0163] In at least one embodiment, if the radio frequency signal of the first frequency band output via the interstage radio frequency amplifier circuit is transmitted through the first output path, then the fifth switch is closed, the sixth switch is open, and the first resonant capacitor and the first resonant inductor resonate within the first frequency band. If the radio frequency signal of the second frequency band output by the interstage radio frequency amplifier circuit is transmitted through the second output path, then the sixth switch is closed, the fifth switch is open, and the second resonant capacitor and the second resonant inductor resonate within the second frequency band.

[0164] In at least one embodiment, this application provides a radio frequency power amplifier, comprising: The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage radio frequency amplifier circuit is connected to the second pre-stage coil unit; The first resonant capacitor has its first end connected to the first output path and its second end configured to be grounded. The first resonant inductor has its first end connected in the first output path and its second end grounded through the fifth switch; The second resonant capacitor has its first end connected in the second output path and its second end configured to be grounded. The second resonant inductor has its first end connected in the second output path and its second end grounded through the fifth switch; If the radio frequency signal of the first frequency band output by the interstage radio frequency amplifier circuit is transmitted through the first output path, then the fifth switch is closed, the sixth switch is open, and the first resonant capacitor and the first resonant inductor resonate within the first frequency band. If the radio frequency signal of the second frequency band output by the interstage radio frequency amplifier circuit is transmitted through the second output path, then the sixth switch is closed, the fifth switch is open, and the second resonant capacitor and the second resonant inductor resonate within the second frequency band.

[0165] For example, such as Figure 14As shown, the first terminal of the first resonant capacitor 711 is connected in the first output path, and the second terminal is configured to be grounded. The first terminal of the first resonant inductor 712 is connected in the first output path, and the second terminal is grounded through the fifth switch 713. The first terminal of the second resonant capacitor 721 is connected in the second output path, and the second terminal is configured to be grounded. The first terminal of the second resonant inductor 722 is connected in the second output path, and the second terminal is grounded through the sixth switch 723.

[0166] A first resonant capacitor and a first resonant inductor are configured in the first output path, and the first resonant inductor is grounded through a fifth switch. If the RF signal of the first frequency band output by the interstage RF amplifier circuit is transmitted through the first output path, the fifth switch is closed and the sixth switch is open. Since the first resonant capacitor and the first resonant inductor resonate within the first frequency band, they are in a high-impedance state for the first output path transmitting the first frequency band RF signal. The second transformer network and the second resonant capacitor participate in output matching. In this scenario, since the first resonant capacitor and the first resonant inductor are in a high-impedance state, the loss caused by the equivalent resistance of the fifth switch corresponding to the first resonant inductor being closed is greatly reduced, while the sixth switch 723 is in an open state. Therefore, in this scenario, the switching loss introduced by switching to the first output path can be greatly reduced, and the value of the second resonant capacitor can be flexibly adjusted to achieve impedance matching in this scenario, thus ensuring performance.

[0167] A second resonant capacitor and a second resonant inductor are configured in the second output path, and the second resonant inductor is grounded through a sixth switch. If the second frequency band RF signal output from the interstage RF amplifier circuit is transmitted through the second output path, the sixth switch is closed and the fifth switch is open. Since the second resonant capacitor and the second resonant inductor resonate within the second frequency band, the second resonant capacitor and the second resonant inductor are in a high-impedance state for the second output path transmitting the second frequency band RF signal. The second transformer network and the first resonant capacitor participate in output matching. In this scenario, since the second resonant capacitor and the second resonant inductor are in a high-impedance state, the loss caused by the equivalent resistance of the sixth switch corresponding to the second resonant inductor being closed is greatly reduced, while the fifth switch 713 is in an open state. Therefore, in this scenario, the switching loss introduced by switching to the second output path can be greatly reduced, and the value of the first resonant capacitor can be flexibly adjusted to achieve impedance matching in this scenario, thus ensuring performance.

[0168] In at least one embodiment, the RF power amplifier further includes a seventh switch and / or an eighth switch, one end of the seventh switch being connected to a first end of the first resonant inductor and the other end being connected to a first output port, and one end of the eighth switch being connected to a first end of the second resonant inductor and the other end being connected to a second output port.

[0169] like Figure 15 As shown, a seventh switch 714 is connected in series in the first output path. One end of the seventh switch 714 is connected to the first end of the first resonant inductor 712, and the other end is connected to the first output port. An eighth switch 724 is connected in series in the second output path. One end of the eighth switch 724 is connected to the first end of the second resonant inductor 722, and the other end is connected to the second output port.

[0170] If the RF signal of the first frequency band output from the interstage RF amplifier circuit is transmitted through the first output path, then the seventh switch is closed and the eighth switch is open. If the RF signal of the second frequency band output from the interstage RF amplifier circuit is transmitted through the second output path, then the eighth switch is closed and the seventh switch is open.

[0171] In this embodiment, the isolation between different output paths is further improved by introducing the seventh switch and / or the eighth switch.

[0172] Understandably, the seventh and eighth switches can be set to either one or both, depending on the isolation requirements of the corresponding frequency band.

[0173] In at least one embodiment, this application provides a radio frequency front-end module, including: The first chip includes a first transformer network, a first preamplifier branch, a second preamplifier branch, and an interstage radio frequency amplifier circuit. The first transformer network includes a first preamplifier coil unit and a first postamplifier coil unit coupled to each other. The first preamplifier branch is connected to a first end of the first preamplifier coil unit, and the second preamplifier branch is connected to a second end of the first preamplifier coil unit. The interstage radio frequency amplifier circuit is connected between the first postamplifier coil unit and the second preamplifier coil unit and is configured to amplify the signal processed by the first preamplifier branch and the signal processed by the second preamplifier branch. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. The first switch has one end connected to the first end of the first pre-stage coil unit, and the other end configured to be grounded. The second switch has one end connected to the second end of the first pre-stage coil unit, and the other end configured to be grounded. The first switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the first output path; The second switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the second output path.

[0174] In this embodiment, the first transformer network, the first preamplifier branch, the second preamplifier branch, and the interstage RF amplifier circuit are all disposed in the first chip.

[0175] The first chip may be implemented using BJT technology, or the first chip may be implemented using CMOS technology, or the first chip may be implemented using SOI technology, or the first chip may be implemented using gallium arsenide technology.

[0176] The second transformer network may be disposed in the first chip, or the second transformer network may be disposed on the substrate, or the second transformer network may be disposed in an additional chip.

[0177] The first switch can be located in the first chip, or the first switch can be located in another chip. The second switch can be located in the first chip, or the second switch can be located in another chip.

[0178] In at least one embodiment, the first switching network includes a third switch, one end of which is connected to a first end of the second subsequent coil unit or to a first output path, and the other end is configured to be grounded. The second switching network includes a fourth switch, one end of which is connected to the second end of the second subsequent coil unit or to the second output path, and the other end is configured to be grounded.

[0179] In at least one embodiment, the first switch and the second switch are disposed in the first chip, while the third switch and the fourth switch are not disposed in the first chip.

[0180] In at least one embodiment, the radio frequency power amplifier further includes: Second chip; A substrate, on which both the first chip and the second chip are disposed; The first switch and the second switch are disposed in the first chip. Some components of the first switching network are disposed on the substrate, and other components are disposed in the second chip. Some components of the second switching network are disposed on the substrate, and other components are disposed in the second chip.

[0181] The second chip can be implemented using a BJT process, or the first chip can be implemented using a CMOS process, or the second chip can be implemented using an SOI process, or the second chip can be implemented using a gallium arsenide process. In at least one embodiment, the first chip and the second chip are chips implemented using different processes.

[0182] In at least one embodiment, the first switching network includes a first resonant capacitor, a first resonant inductor, and a fifth switch; a first terminal of the first resonant capacitor is connected in the first output path, and a second terminal is configured to be grounded; a first terminal of the first resonant inductor is connected in the first output path, and a second terminal is grounded through the fifth switch; The second switching network includes a second resonant capacitor, a second resonant inductor, and a sixth switch; the first end of the second resonant capacitor is connected in the second output path, and the second end is configured to be grounded; the first end of the second resonant inductor is connected in the second output path, and the second end is grounded through the sixth switch; The first resonant inductor is disposed on the substrate, the fifth switch is disposed in the second chip, and the first resonant capacitor is disposed on the substrate or the second chip; The second resonant inductor is disposed on the substrate, the sixth switch is disposed in the second chip, and the second resonant capacitor is disposed on the substrate or the second chip.

[0183] In at least one embodiment, the first switching network includes a third switch and a first matching network. One end of the third switch is connected to a first end of the second subsequent coil unit or to a first output path, and the other end is configured to be grounded. The first matching network is connected in the first output path, and a first end of the first matching network is connected to one end of the third switch. A second end of the first matching network is connected to a first signal output terminal.

[0184] The second switching network includes a fourth switch and a second matching network. One end of the fourth switch is connected to the second end of the second subsequent coil unit or to the second output path, and the other end is configured to be grounded. The second matching network is connected in the second output path, and the first end of the second matching network is connected to one end of the fourth switch, and the second end of the second matching network is connected to the second signal output terminal. Both the first switching network and the second switching network are located in the second chip, and the first switch and the second switch are located in the first chip.

[0185] In at least one embodiment, the radio frequency front end further includes: Second chip; A substrate, on which both the first chip and the second chip are disposed; The third switch and the fourth switch are disposed in the second chip; Wherein, at least one of the first switch and the second switch is formed by two or more transistors connected in reverse parallel, and at least one of the third switch and the fourth switch is formed by one or more transistors connected in series.

[0186] Understandably, the main circuit terminals are the two terminals other than the control terminal when a transistor is used as a switch. For example, if the transistor is a BJT, its base is the control terminal, and its collector and emitter are the main circuit terminals. If the transistor is a MOSFET, its gate is the control terminal, and its source and drain are the main circuit terminals. Reverse parallel connection of the main circuit terminals refers to connecting the main circuit terminals of two transistors in parallel, but the terminals are not corresponding. For example, ... Figure 16 As shown in (a), the collector of BJT A and the emitter of BJT B are connected as the first terminal of a first switch or a second switch, and the emitter of BJT A and the collector of BJT B are connected as the second terminal of the first switch or the second switch. Alternatively, the source of MOSFET A and the drain of MOSFET B are connected as the first terminal of a first switch or a second switch, and the drain of MOSFET A and the source of MOSFET B are connected as the second terminal of the first switch or the second switch. Understandably, the number of transistors in each connection method can be one or more, which will not be elaborated further here.

[0187] One or more transistors are connected in series to form a main circuit terminal series connection, thus forming a switching path. For example, such as... Figure 16 As shown in (b), the drain of MOSFET C serves as the first terminal of the third or fourth switch, the source of MOSFET C is connected to the drain of MOSFET D, and the source of MOSFET D serves as the second terminal of the third or fourth switch.

[0188] In at least one embodiment, the first chip is a BJT process chip, and the second chip is a CMOS process chip. The BJT process chip is a chip capable of implementing BJT transistors (including homojunction BJT transistors and heterojunction BJT transistors), while the CMOS process chip is a chip capable of implementing CMOS transistors (including bulk silicon CMOS and SOICOMS).

[0189] In this embodiment, the main circuit terminals are connected in reverse parallel in the BJT process chip, which better ensures that the on-resistance of the BJT is lower when used as a switch. In the CMOS process, there is no need to use the main circuit terminals in reverse parallel, which also takes into account the integration level.

[0190] In at least one embodiment, this application provides a radio frequency front-end module, including the radio frequency power amplifier as described in any of the above embodiments and / or implementations.

[0191] In at least one embodiment, this application provides an electronic device including a radio frequency power amplifier as described in any of the above embodiments and / or implementations, or including a radio frequency front-end module as described in any of the above embodiments and / or implementations.

[0192] Understandably, without causing technical conflicts, the technical features recorded in each embodiment, implementation method, independent claim, and dependent claim in this application are mutually applicable technical means, which can be adapted and combined to any technical solution defined by any embodiment, implementation method, independent claim, and dependent claim. Each technical feature can be applied and combined with each other across embodiments and claims, and this application will not repeat the description.

[0193] The above description is only a preferred embodiment of this application. It should be noted that for those skilled in the art, several improvements and substitutions can be made without departing from the technical principles of this application, and these improvements and substitutions should also be considered within the scope of protection of this application.

Claims

1. A radio frequency power amplifier, characterized in that, include: The first transformer network includes a first front-stage coil unit and a first rear-stage coil unit that are coupled to each other. The first preamplifier branch is connected to the first end of the first preamplifier coil unit; The second preamplifier branch is connected to the second end of the first preamplifier coil unit; The first ground path has one end connected to the first end of the first preamplifier coil unit and the other end configured to be grounded. It is configured to form a ground path when the second preamplifier branch is working and to be in a high-resistance state when the second preamplifier branch is not working. The second ground path has one end connected to the first end of the second preamplifier coil unit and the other end configured to be grounded. It is configured to form a ground path when the first preamplifier branch is working and to be in a high-resistance state when the first preamplifier branch is not working. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage radio frequency amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch. The third ground path has one end connected to the first end of the second post-stage coil unit or to the first output path, and the other end is configured to be grounded. It is configured to form a ground path when the second pre-stage amplification branch is working, and to be in a high-impedance state when the second pre-stage amplification branch is not working. The fourth path to ground has one end connected to the second end of the second post-stage coil unit or to the second output path, and the other end is configured to be grounded. It is configured to form a path to ground when the first pre-amplifier branch is working, and to be in a high-impedance state when the first pre-amplifier branch is not working.

2. The radio frequency power amplifier according to claim 1, characterized in that, The first ground path includes a first switch, one end of which is connected to a first end of the first front-stage coil unit, and the other end is configured to be grounded. The second path to ground includes a second switch, one end of which is connected to the second end of the first pre-stage coil unit, and the other end of which is configured to be grounded; The third ground path includes a third switch, one end of which is connected to the first end of the second subsequent coil unit or to the first output path, and the other end is configured to be grounded. The fourth ground path includes a fourth switch, one end of which is connected to the second end of the second subsequent coil unit or to the second output path, and the other end is configured to be grounded.

3. The radio frequency power amplifier according to claim 2, characterized in that, In the first operating mode, the third switch is open, the fourth switch is closed, the first switch is open, the second switch is closed, the second preamplifier branch is not working, the first preamplifier branch is working, and the interstage RF amplifier circuit is working. In the second operating mode, the third switch is closed, the fourth switch is open, the first switch is closed, the second switch is open, the second preamplifier branch is working, the interstage RF amplifier circuit is working, and the first preamplifier branch is not working.

4. The radio frequency power amplifier according to claim 2, characterized in that, One end of the first switch is connected to the non-DC path node of the first preamplifier branch, and one end of the second switch is connected to the non-DC path node of the second preamplifier branch.

5. The radio frequency power amplifier according to claim 2, characterized in that, The first preamplifier branch includes a first preamplifier transistor and a first capacitor. The first capacitor is connected between the output terminal of the first preamplifier transistor and the first terminal of the first preamplifier coil unit. One end of the first switch is connected between the first capacitor and the first terminal of the first preamplifier coil unit. And / or, The second preamplifier branch includes a second preamplifier transistor and a second capacitor. The second capacitor is connected between the output terminal of the second preamplifier transistor and the first terminal of the second preamplifier coil unit. One end of the second switch is connected between the second capacitor and the first terminal of the second preamplifier coil unit.

6. The radio frequency power amplifier according to claim 5, characterized in that, The first preamplifier branch further includes a first inductor, the first end of which is configured to receive a first supply voltage, and the second end of which is connected to the output terminal of the first preamplifier transistor unit. And / or, The second preamplifier branch also includes a second inductor, the first end of which is configured to receive a second supply voltage, and the second end of which is connected to the output of the second preamplifier transistor unit.

7. The radio frequency power amplifier according to claim 3, characterized in that, In the first operating mode, the first preamplifier branch is configured to amplify the radio frequency signal of the first frequency band, and in the second operating mode, the second preamplifier branch is configured to amplify the radio frequency signal of the second frequency band, wherein the first frequency band and the second frequency band are at least partially different.

8. The radio frequency power amplifier according to claim 1, characterized in that, The interstage RF amplifier circuit is either a differential amplifier circuit or a single-ended amplifier circuit.

9. The radio frequency power amplifier according to claim 1, characterized in that, The interstage RF amplifier circuit includes a first interstage amplifier transistor unit and a second interstage amplifier transistor unit. The input terminal of the first interstage amplifier transistor unit is connected to the first terminal of the first post-stage coil unit, the output terminal of the first interstage amplifier transistor unit is connected to the first terminal of the second pre-stage coil unit, the input terminal of the second interstage amplifier transistor unit is connected to the second terminal of the first post-stage coil unit, and the output terminal of the second interstage amplifier transistor unit is connected to the second terminal of the second pre-stage coil unit.

10. The radio frequency power amplifier according to claim 2, characterized in that, The first pre-stage coil unit includes a first pre-stage sub-coil and a second pre-stage sub-coil, and the first post-stage coil unit includes a first post-stage sub-coil and a second post-stage sub-coil. The first pre-stage sub-coil is coupled to the first post-stage sub-coil, and the second pre-stage sub-coil is coupled to the second post-stage sub-coil.

11. The radio frequency power amplifier according to claim 10, characterized in that, One end of the first preamp sub-coil is connected to one end of the first switch, the other end of the first preamp sub-coil is connected to one end of the second preamp sub-coil, and the other end of the second preamp sub-coil is connected to one end of the second switch.

12. The radio frequency power amplifier according to claim 2, characterized in that, The second pre-stage coil unit includes a third pre-stage sub-coil and a fourth pre-stage sub-coil, and the second post-stage coil unit includes a third post-stage sub-coil and a fourth post-stage sub-coil. The third pre-stage sub-coil is coupled to the third post-stage sub-coil, and the fourth pre-stage sub-coil is coupled to the fourth post-stage sub-coil. One end of the third post-stage sub-coil is connected to one end of the third switch, the other end of the third post-stage sub-coil is connected to one end of the fourth post-stage sub-coil, and the other end of the fourth post-stage sub-coil is connected to one end of the fourth switch.

13. The radio frequency power amplifier according to claim 2, characterized in that, One end of the third switch is connected to the first end of the second subsequent coil unit, and one end of the fourth switch is connected to the second end of the second subsequent coil unit. The RF power amplifier further includes a first output matching unit and a second output matching unit. A first end of the first output matching unit is connected to one end of the third switch, and a second end of the first output matching unit is configured to be connected to a first output terminal. A first end of the second output matching unit is connected to one end of the fourth switch, and a second end of the second output matching unit is configured to be connected to a second output terminal.

14. The radio frequency power amplifier according to claim 13, characterized in that, It also includes a third output matching unit and a fourth output matching unit. The first end of the third output matching unit is connected to the first end of the second subsequent coil unit, and the second end of the third output matching unit is connected to one end of the third switch. The first end of the fourth output matching unit is connected to the second end of the second subsequent coil unit, and the second end of the fourth output matching unit is connected to one end of the fourth switch.

15. The radio frequency power amplifier according to claim 1, characterized in that... It also includes: The number of amplifying transistors in the first preamplifier branch is less than the number of amplifying transistors in any amplifying branch of the interstage RF amplifier circuit, and / or the number of amplifying transistors in the second preamplifier branch is less than the number of amplifying transistors in any amplifying branch of the interstage RF amplifier circuit.

16. The radio frequency power amplifier according to claim 1, characterized in that... It also includes: The size of the amplifying transistor array in the first preamplifier branch is smaller than the size of the amplifying transistor array in any amplifying branch of the interstage RF amplifier circuit, and / or the size of the amplifying transistor array in the second preamplifier branch is smaller than the size of the amplifying transistor array in any amplifying branch of the interstage RF amplifier circuit.

17. The radio frequency power amplifier according to claim 3, characterized in that... The interstage RF amplifier circuit includes a switchable harmonic matching network, which is configured to switch between different harmonic matching networks based on different operating modes.

18. The radio frequency power amplifier according to claim 9, characterized in that... It includes a first harmonic switching circuit and a second harmonic switching circuit. The first terminal of the first harmonic switching circuit is connected to the output terminal of the first interstage amplification transistor unit, and the second terminal of the first harmonic switching circuit is configured to be grounded. The first terminal of the second harmonic switching circuit is connected to the output terminal of the second interstage amplification transistor unit, and the second terminal of the second harmonic switching circuit is configured to be grounded.

19. The radio frequency power amplifier according to claim 18, characterized in that... The first harmonic switching circuit includes a first harmonic capacitor, a first harmonic inductor, a first coupling inductor, and a first coupling switch. The first harmonic capacitor and the first harmonic inductor are connected in series between the first terminal and the second terminal of the first harmonic switching circuit. The first coupling inductor is coupled to at least a portion of the first harmonic inductor. The first coupling switch is connected to the first coupling inductor. And / or, The second harmonic switching circuit includes a second harmonic capacitor, a second harmonic inductor, a second coupling inductor, and a second coupling switch. The second harmonic capacitor and the second harmonic inductor are connected in series between the first terminal and the second terminal of the second harmonic switching circuit. The first coupling inductor is coupled to at least a portion of the second harmonic inductor, and the second coupling switch is connected to the second coupling inductor.

20. A radio frequency power amplifier, characterized in that, include: The first transformer network includes a first front-stage coil unit and a first rear-stage coil unit that are coupled to each other. The first preamplifier branch is connected to the first end of the first preamplifier coil unit. The first preamplifier branch includes a first preamplifier transistor and a first capacitor. The first capacitor is connected between the output end of the first preamplifier transistor and the first end of the first preamplifier coil unit. The second preamplifier branch is connected to the second end of the first preamplifier coil unit. The second preamplifier branch includes a second preamplifier transistor and a second capacitor. The second capacitor is connected between the output end of the second preamplifier transistor and the first end of the second preamplifier coil unit. The first switch has one end connected between the first capacitor and the first end of the first pre-stage coil unit, and the other end configured to be grounded. The second switch has one end connected between the second capacitor and the first end of the second pre-coil unit, and the other end configured to be grounded. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage RF amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch, wherein the size of the amplifying transistor array in the first pre-stage amplification branch is smaller than the size of the amplifying transistor array in any amplification branch of the interstage RF amplifier circuit, and / or the size of the amplifying transistor array in the second pre-stage amplification branch is smaller than the size of the amplifying transistor array in any amplification branch of the interstage RF amplifier circuit; The first switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the first output path; The second switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the second output path.

21. A radio frequency power amplifier, characterized in that, include: The first transformer network includes a first front-stage coil unit and a first rear-stage coil unit that are coupled to each other. A first preamplifier branch is connected to a first terminal of the first preamplifier coil unit. The first preamplifier branch includes a first preamplifier transistor, a first capacitor, and a first inductor. A first terminal of the first capacitor is connected to the output terminal of the first preamplifier transistor, and a second terminal of the first capacitor is connected to the first terminal of the first preamplifier coil unit. A first terminal of the first inductor is configured to receive a first supply voltage, and a second terminal of the first inductor is connected between the output terminal of the first preamplifier transistor unit and the first terminal of the first capacitor. The second preamplifier branch is connected to the second end of the first preamplifier coil unit. The second preamplifier branch includes a second preamplifier transistor, a second capacitor, and a second inductor. The first end of the second capacitor is connected to the output end of the second preamplifier transistor, and the second end of the second capacitor is connected to the second end of the first preamplifier coil unit. The first end of the second inductor is configured to receive a second supply voltage, and the second end of the second inductor is connected between the output end of the second preamplifier transistor unit and the first end of the second capacitor. The first switch has one end connected between the first capacitor and the first end of the first pre-stage coil unit, and the other end configured to be grounded. The second switch has one end connected between the second capacitor and the first end of the second pre-stage coil unit, and the other end configured to be grounded.

22. The radio frequency power amplifier according to claim 21, characterized in that... It also includes: The second transformer network includes a second front-stage coil unit and a second rear-stage coil unit that are coupled to each other. An interstage radio frequency amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch.

23. The radio frequency power amplifier according to claim 21, characterized in that... The first supply voltage is the power supply voltage, and the second supply voltage is the battery voltage.

24. The radio frequency power amplifier according to claim 21, characterized in that... It also includes: The third transformer network includes a third pre-stage coil unit and a third post-stage coil unit that are coupled to each other. The first end of the third post-stage coil unit is connected to the input end of the first pre-stage amplification branch, and the second end of the third post-stage coil unit is connected to the input end of the second pre-stage amplification branch. The ninth switch has its first end connected between the first end of the third post-stage coil unit and the input end of the first pre-stage amplification branch, and its second end configured to be grounded. The tenth switch has its first end connected between the second end of the third post-stage coil unit and the input end of the second pre-stage amplification branch, and its second end is configured to be grounded. The third preamplifier branch is connected to the first end of the third preamplifier coil unit.

25. The radio frequency power amplifier according to claim 24, characterized in that... It also includes: The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other, wherein a first end of the second post-stage coil unit is connected to a first output path, and a second end of the second post-stage coil unit is connected to a second output path; An interstage radio frequency amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch.

26. The radio frequency power amplifier according to claim 24, characterized in that... The first preamplifier branch also includes a third capacitor. The first end of the third capacitor is connected to the input terminal of the first preamplifier transistor, and the second end of the third capacitor is connected to the first end of the third post-amplifier coil unit. The first end of the ninth switch is connected between the first end of the third post-amplifier coil unit and the second end of the third capacitor. The second preamplifier branch also includes a fourth capacitor. The first end of the fourth capacitor is connected to the input terminal of the second preamplifier transistor, and the second end of the fourth capacitor is connected to the second end of the third post-amplifier coil unit. The first end of the tenth switch is connected between the second end of the third post-amplifier coil unit and the second end of the fourth capacitor.

27. The radio frequency power amplifier according to claim 24, characterized in that... In the first operating mode, the first preamplifier branch is working, the second preamplifier branch is not working, the first switch is open, the second switch is closed, the ninth switch is open, and the tenth switch is closed. In the second operating mode, the first preamplifier branch is not working, the second preamplifier branch is working, the first switch is closed, the second switch is open, the ninth switch is closed, and the tenth switch is open.

28. The radio frequency power amplifier according to claim 24, characterized in that... , The second terminal of the third preamplifier coil unit is configured to be grounded or configured to receive a power supply voltage, or it may further include a fourth preamplifier branch connected to the second terminal of the third preamplifier coil unit.

29. A radio frequency power amplifier, characterized in that, include: The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage radio frequency amplifier circuit is connected to the second pre-stage coil unit; The third switch has one end connected to the first end of the second subsequent coil unit or to the first output path, and the other end is configured to be grounded. The fourth switch has one end connected to the second end of the second subsequent coil unit or to the second output path, and the other end configured to be grounded; A first matching network is connected in the first output path, and a first end of the first matching network is connected to one end of the third switch, and a second end of the first matching network is connected to the first signal output terminal. The second matching network is connected in the second output path, and the first end of the second matching network is connected to one end of the fourth switch, and the second end of the second matching network is connected to the second signal output terminal.

30. The radio frequency power amplifier according to claim 29, characterized in that, The turns ratio of the second pre-stage coil unit and the second post-stage coil unit is greater than 0.5:

1. The interstage RF amplifier circuit and the second pre-stage coil unit, as well as the second post-stage coil unit and the third and / or fourth switch, include at least one passive element matching network.

31. The radio frequency power amplifier according to claim 29, characterized in that, The first matching network includes a first capacitor, which is connected in series in the first output path; The second matching network includes a second capacitor connected in series in the second output path.

32. The radio frequency power amplifier according to claim 29, characterized in that, The turns ratio of the second pre-stage coil unit and the second post-stage coil unit is greater than 0.5:1 and less than or equal to 3:

1. The RF power amplifier further includes: A third matching network is connected in the first output path, and the first end of the third matching network is connected to the first end of the second subsequent coil unit, and the second end of the first matching network is connected to one end of the third switch. A fourth matching network is connected in the second output path, and the first end of the fourth matching network is connected to the second end of the second subsequent coil unit, and the second end of the fourth matching network is connected to one end of the fourth switch.

33. The radio frequency power amplifier according to claim 29, characterized in that, It also includes a first frequency band selection switch network and / or a second frequency band selection switch network, wherein the first signal output terminal is connected to the first frequency band selection switch network and the second signal output terminal is connected to the second frequency band selection switch network.

34. The radio frequency power amplifier according to claim 29, characterized in that, There is no series switch in the first output path, and / or there is no series switch in the second output path.

35. The radio frequency power amplifier according to claim 29, characterized in that, The first matching network has a different structure or parameters than the second matching network.

36. A radio frequency power amplifier, characterized in that, include: The first transformer network includes a first front-stage coil unit and a first rear-stage coil unit that are coupled to each other. The first preamplifier branch is connected to the first end of the first preamplifier coil unit; The second preamplifier branch is connected to the second end of the first preamplifier coil unit; The first switch has one end connected between the first capacitor and the first end of the first pre-stage coil unit, and the other end configured to be grounded. The second switch has one end connected between the second capacitor and the first end of the second pre-coil unit, and the other end configured to be grounded. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage radio frequency amplifier circuit, connected between the first post-stage coil unit and the second pre-stage coil unit, is configured to amplify the signal processed by the first pre-stage amplification branch and the signal processed by the second pre-stage amplification branch. The first switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the first output path; The second switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the second output path.

37. The radio frequency power amplifier according to claim 36, characterized in that... The first switching network includes a third switch, one end of which is connected to the first end of the second subsequent coil unit or to the first output path, and the other end is configured to be grounded. The second switching network includes a fourth switch, one end of which is connected to the second end of the second subsequent coil unit or to the second output path, and the other end is configured to be grounded.

38. The radio frequency power amplifier according to claim 36, characterized in that... The first switching network includes a first resonant capacitor, a first resonant inductor, and a fifth switch; The first end of the first resonant capacitor is connected in the first output path, and the second end is configured to be grounded. The first end of the first resonant inductor is connected in the first output path, and the second end is grounded through the fifth switch; The second switching network includes a second resonant capacitor, a second resonant inductor, and a sixth switch; The first end of the second resonant capacitor is connected in the second output path, and the second end is configured to be grounded; The first end of the second resonant inductor is connected in the second output path, and the second end is grounded through the sixth switch.

39. The radio frequency power amplifier according to claim 36, characterized in that... If the radio frequency signal of the first frequency band output by the interstage radio frequency amplifier circuit is transmitted through the first output path, then the fifth switch is closed, the sixth switch is open, and the first resonant capacitor and the first resonant inductor resonate within the first frequency band. If the radio frequency signal of the second frequency band output by the interstage radio frequency amplifier circuit is transmitted through the second output path, then the sixth switch is closed, the fifth switch is open, and the second resonant capacitor and the second resonant inductor resonate within the second frequency band.

40. A radio frequency power amplifier, characterized in that, include: The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. An interstage radio frequency amplifier circuit is connected to the second pre-stage coil unit; The first resonant capacitor has its first end connected to the first output path and its second end configured to be grounded. The first resonant inductor has its first end connected in the first output path and its second end grounded through the fifth switch; The second resonant capacitor has its first end connected in the second output path and its second end configured to be grounded. The second resonant inductor has its first end connected in the second output path and its second end grounded through the sixth switch; If the radio frequency signal of the first frequency band output by the interstage radio frequency amplifier circuit is transmitted through the first output path, then the fifth switch is closed, the sixth switch is open, and the first resonant capacitor and the first resonant inductor resonate in the first frequency band. If the radio frequency signal of the second frequency band output by the interstage radio frequency amplifier circuit is transmitted through the second output path, then the sixth switch is closed, the fifth switch is open, and the second resonant capacitor and the second resonant inductor resonate within the second frequency band.

41. The radio frequency power amplifier according to claim 40, characterized in that, It also includes a seventh switch and / or an eighth switch, one end of the seventh switch being connected to the first end of the first resonant inductor and the other end being connected to the first output port, and one end of the eighth switch being connected to the first end of the second resonant inductor and the other end being connected to the second output port.

42. A radio frequency front-end module, characterized in that, include: The first chip includes a first transformer network, a first preamplifier branch, a second preamplifier branch, and an interstage radio frequency amplifier circuit. The first transformer network includes a first preamplifier coil unit and a first postamplifier coil unit coupled to each other. The first preamplifier branch is connected to a first end of the first preamplifier coil unit, and the second preamplifier branch is connected to a second end of the first preamplifier coil unit. The interstage radio frequency amplifier circuit is connected between the first postamplifier coil unit and the second preamplifier coil unit and is configured to amplify the signal processed by the first preamplifier branch and the signal processed by the second preamplifier branch. The second transformer network includes a second pre-stage coil unit and a second post-stage coil unit coupled to each other. The first end of the second post-stage coil unit is connected to the first output path, and the second end of the second post-stage coil unit is connected to the second output path. The first switch has one end connected to the first end of the first pre-stage coil unit, and the other end configured to be grounded. The second switch has one end connected to the second end of the first pre-stage coil unit, and the other end configured to be grounded. The first switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the first output path; The second switching network is configured to transmit the radio frequency signal amplified by the interstage radio frequency amplifier circuit through the second output path.

43. The radio frequency front-end module according to claim 42, characterized in that, The first switching network includes a third switch, one end of which is connected to the first end of the second subsequent coil unit or to the first output path, and the other end is configured to be grounded; The second switching network includes a fourth switch, one end of which is connected to the second end of the second subsequent coil unit or to the second output path, and the other end is configured to be grounded.

44. The radio frequency front-end module according to claim 43, characterized in that, The first switch and the second switch are disposed in the first chip, while the third switch and the fourth switch are not disposed in the first chip.

45. The radio frequency front-end module according to claim 42, characterized in that, Also includes: Second chip; A substrate, on which both the first chip and the second chip are disposed; The first switch and the second switch are disposed in the first chip. Some components of the first switching network are disposed on the substrate, and other components are disposed in the second chip. Some components of the second switching network are disposed on the substrate, and other components are disposed in the second chip.

46. ​​The radio frequency front-end module according to claim 42, characterized in that, The first switching network includes a first resonant capacitor, a first resonant inductor, and a fifth switch; the first end of the first resonant capacitor is connected in the first output path, and the second end is configured to be grounded; the first end of the first resonant inductor is connected in the first output path, and the second end is grounded through the fifth switch; The second switching network includes a second resonant capacitor, a second resonant inductor, and a sixth switch; the first end of the second resonant capacitor is connected in the second output path, and the second end is configured to be grounded; the first end of the second resonant inductor is connected in the second output path, and the second end is grounded through the sixth switch; The first resonant inductor is disposed on the substrate, the fifth switch is disposed in the second chip, and the first resonant capacitor is disposed on the substrate or the second chip; The second resonant inductor is disposed on the substrate, the sixth switch is disposed in the second chip, and the second resonant capacitor is disposed on the substrate or the second chip.

47. The radio frequency front-end module according to claim 42, characterized in that, The first switching network includes a third switch and a first matching network. One end of the third switch is connected to the first end of the second subsequent coil unit or to the first output path, and the other end is configured to be grounded. The first matching network is connected in the first output path, and the first end of the first matching network is connected to one end of the third switch. The second end of the first matching network is connected to the first signal output terminal. The second switching network includes a fourth switch and a second matching network. One end of the fourth switch is connected to the second end of the second subsequent coil unit or to the second output path, and the other end is configured to be grounded. The second matching network is connected in the second output path, and the first end of the second matching network is connected to one end of the fourth switch, and the second end of the second matching network is connected to the second signal output terminal. Both the first switching network and the second switching network are located in the second chip, and the first switch and the second switch are located in the first chip.

48. The radio frequency front-end module according to claim 43, characterized in that, Also includes: Second chip; A substrate, on which both the first chip and the second chip are disposed, wherein the first chip is a BJT process chip and the second chip is a CMOS process chip; The third switch and the fourth switch are disposed in the second chip; Wherein, at least one of the first switch and the second switch is formed by two or more transistors connected in reverse parallel, and at least one of the third switch and the fourth switch is formed by one or more transistors connected in series.

49. A radio frequency front-end module, characterized in that, Includes the radio frequency power amplifier as described in any one of claims 1-41.

50. An electronic device, characterized in that, It includes the RF power amplifier as described in any one of claims 1-41, or the RF front-end module as described in any one of claims 42-48.