Method for removing residues in aluminum etching processes

Abstract

A method for removing residues in an aluminum etching process, comprising: providing a substrate; forming an aluminum metal thin film layer on the substrate; etching the aluminum metal thin film layer to form an aluminum metal pattern layer; and performing post-etching cleaning on the aluminum metal pattern layer, wherein the post-etching cleaning is dry cleaning. The aluminum metal pattern layer after etching is cleaned by dry cleaning, which can remove the polymer on the surface of the aluminum metal pattern layer without damaging the aluminum metal pattern layer, thereby improving the removal efficiency of the polymer and the performance of the device.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and more particularly to a method for removing residues from aluminum etching processes. Background Technology

[0002] In semiconductor devices, aluminum is used as the interconnect metal. When forming the metal interconnects in semiconductor devices, etching technology is used to etch the aluminum to create the interconnects. Typically, to ensure the precision of the interconnect lines, dry etching technology is used to etch the aluminum lines, employing photoresist as a mask. During the etching process, polymers are generated and adhere to the sidewalls of the aluminum lines.

[0003] Currently, a wet cleaning process is used to etch and clean the polymer on the sidewalls of aluminum wires. However, polymer residues remain on the sidewalls after wet cleaning. These residues can adversely affect subsequent processes, such as causing short circuits between metal layers, increased contact resistance, and decreased device reliability. Summary of the Invention

[0004] The technical problem solved by this invention is how to remove the polymer from the sidewalls of aluminum wire.

[0005] To address the aforementioned technical problems, embodiments of the present invention provide a method for removing residues from an aluminum etching process, comprising: providing a substrate; forming an aluminum metal thin film layer on the substrate; etching the aluminum metal thin film layer to form an aluminum metal pattern layer; and cleaning the aluminum metal pattern layer after etching, wherein the post-etching cleaning is a dry cleaning method.

[0006] Optionally, the step of etching the aluminum metal thin film layer to form an aluminum metal pattern layer includes: etching the aluminum metal thin film layer to form an aluminum metal pattern layer, wherein the surface of the aluminum metal pattern layer has a polymer; the step of cleaning the aluminum metal pattern layer after etching includes: cleaning the aluminum metal pattern layer after etching to remove the polymer.

[0007] Optionally, the step of etching the aluminum metal thin film layer to form an aluminum metal pattern layer includes: etching the aluminum metal thin film layer with a chlorine-containing gas to form an aluminum metal pattern layer; the step of cleaning the aluminum metal pattern layer after etching includes: cleaning the aluminum metal pattern layer with a post-etching cleaning gas, wherein the post-etching cleaning gas includes an oxidizing element, and the oxidizing element has a stronger oxidizing power than chlorine.

[0008] Optionally, the step of etching and cleaning the aluminum metal pattern layer includes: etching and cleaning the aluminum metal pattern layer with a fluorine-containing gas.

[0009] Optionally, the step of etching and cleaning the aluminum metal patterned layer with a fluorine-containing gas includes: etching and cleaning the aluminum metal patterned layer with at least one gas selected from CF4 and SF6.

[0010] Optionally, the method for removing residues in the aluminum etching process further includes: forming a mask pattern on the aluminum metal thin film layer after forming an aluminum metal thin film layer on the substrate and before etching the aluminum metal thin film layer to form an aluminum metal pattern layer; the step of etching the aluminum metal thin film layer to form the aluminum metal pattern layer includes: using the mask pattern as a mask, etching the aluminum metal thin film layer to form the aluminum metal pattern layer; the step of cleaning the aluminum metal pattern layer after etching includes: cleaning the aluminum metal pattern layer and the mask pattern after etching.

[0011] Optionally, in the step of forming a mask pattern on the aluminum metal thin film layer, the mask pattern is a patterned photoresist.

[0012] Optionally, the method for removing residues in the aluminum etching process further includes: after etching the aluminum metal thin film layer using the mask pattern as a mask to form an aluminum metal pattern layer, removing the mask pattern before performing post-etching cleaning on the aluminum metal pattern layer and the mask pattern; the step of performing post-etching cleaning on the aluminum metal pattern layer and the mask pattern includes: performing post-etching cleaning on the aluminum metal pattern layer and the remaining mask pattern.

[0013] Optionally, the step of removing the mask pattern includes removing the mask pattern by means of an oxidizing gas.

[0014] Optionally, in the step of removing the mask pattern by oxidizing gas, the oxidizing gas includes oxygen.

[0015] Optionally, the method for removing residues from the aluminum etching process further includes: after forming an aluminum metal thin film layer on the substrate, etching the aluminum metal thin film layer and before forming an aluminum metal pattern layer, forming a barrier layer on the aluminum metal thin film layer; the step of cleaning the aluminum metal pattern layer and the mask pattern after etching includes: cleaning the aluminum metal pattern layer and the mask pattern after etching to remove the mask pattern and expose the barrier layer; the method further includes: after cleaning the aluminum metal pattern layer after etching, etching a barrier layer of a certain thickness.

[0016] Optionally, in the step of etching a partial thickness of the barrier layer, the etching gas includes NF3.

[0017] Optionally, the method for removing residues from the aluminum etching process further includes: after etching a barrier layer of a certain thickness, passivating the barrier layer.

[0018] Optionally, in the step of forming a barrier layer on the aluminum metal thin film layer, the barrier layer comprises TiN.

[0019] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects: In the technical solution of this invention, dry cleaning is used to clean the etched aluminum metal pattern layer, which can remove the polymer on the surface of the aluminum metal pattern layer without damaging the aluminum metal pattern layer, thereby improving the polymer removal efficiency and thus improving the device performance.

[0020] In an optional embodiment of the present invention, the dry cleaning method can remove the polymer and residual mask pattern at the same time, ensuring that there is no mask pattern residue on the aluminum metal pattern layer and improving the reliability of the device.

[0021] In an optional embodiment of the present invention, by removing part of the barrier layer, the mask pattern attached to the barrier layer is removed, ensuring that there is no mask pattern residue on the aluminum metal pattern layer, thereby improving the reliability of the device. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of a semiconductor structure. Figure 2 This is a schematic diagram of removing the aluminum metal thin film layer formed in the aluminum etching process in one embodiment of the present invention; Figure 3 This is a schematic diagram of the removal of mask patterns in the aluminum etching process according to an embodiment of the present invention; Figure 4 This is a schematic diagram of the parameters for removing aluminum etching in one embodiment of the present invention; Figure 5 This is a schematic diagram of polymer removal in an aluminum etching process according to an embodiment of the present invention; Figure 6 This is a schematic diagram of the removal of part of the barrier layer in the aluminum etching process according to an embodiment of the present invention; Figure 7 This is a schematic diagram of removing the passivation barrier layer in the aluminum etching process according to an embodiment of the present invention. Detailed Implementation

[0023] It should be noted that the terms "surface" and "on" in this specification are used to describe the relative spatial position and are not limited to whether there is direct contact.

[0024] Currently, a wet cleaning process is used to etch and clean the polymer on the sidewalls of aluminum wires. However, polymer residues remain on the sidewalls after wet cleaning. These residues can adversely affect subsequent processes, such as causing short circuits between metal layers, increased contact resistance, and decreased device reliability. The reasons for these shortcomings are analyzed below: Figure 1 This is a schematic diagram of a semiconductor structure.

[0025] refer to Figure 1 The method for removing residues from the aluminum etching process in the semiconductor structure includes: providing a substrate 100; forming an aluminum metal thin film layer (not shown in the figure) on the substrate 100; forming a mask pattern 102 on the aluminum metal thin film layer; using the mask pattern 102 as a mask, etching the aluminum metal thin film layer to form an aluminum metal pattern layer 101; and performing post-etching cleaning on the aluminum metal pattern layer 101, wherein the post-etching cleaning is a wet cleaning.

[0026] In the step of etching and cleaning the aluminum metal pattern layer 101, a fluorine-based cleaning solution is used as the cleaning solution to etch and clean the aluminum metal pattern layer 101.

[0027] However, wet cleaning has the following drawbacks: First, the contact time between the cleaning solution and the polymer 103 on the sidewall of the aluminum metal pattern layer 101 is short, resulting in insufficient reaction; second, fluorinated cleaning solutions have limited dissolving power for chlorine-containing polymers; and third, fluorinated cleaning solutions may corrode the surface of the aluminum metal pattern layer 101, causing damage. Therefore, wet cleaning faces a contradiction between cleaning effectiveness and aluminum metal protection.

[0028] Therefore, polymer 103 remains on the sidewalls or top of the aluminum metal pattern layer 101. This residual polymer 103 can have adverse effects on subsequent processes, such as causing short circuits between metal layers, increased contact resistance, and decreased device reliability.

[0029] To solve the above-mentioned technical problems, the present invention provides a method for removing residues in an aluminum etching process, comprising: providing a substrate; forming an aluminum metal thin film layer on the substrate; etching the aluminum metal thin film layer to form an aluminum metal pattern layer; and cleaning the aluminum metal pattern layer after etching, wherein the cleaning after etching is a dry cleaning.

[0030] In the technical solution of this invention, dry cleaning is used to clean the etched aluminum metal pattern layer, which can remove the polymer on the surface of the aluminum metal pattern layer without damaging the aluminum metal pattern layer, thereby improving the polymer removal efficiency and thus improving the device performance.

[0031] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0032] Figures 2 to 6 This is a schematic diagram of the process of removing residues in the aluminum etching process according to an embodiment of the present invention.

[0033] refer to Figure 2The method for removing residues from the aluminum etching process includes: providing a substrate 200; forming an aluminum metal thin film layer 2011 on the substrate 200; and forming a mask layer (not shown in the figure) on the aluminum metal thin film layer 2011.

[0034] In this embodiment, the substrate 200 is made of monocrystalline silicon.

[0035] In other embodiments of the present invention, the substrate 200 may also be a polycrystalline silicon substrate 200, an amorphous silicon substrate 200, a germanium-silicon substrate 200, a silicon-carbon substrate 200, a silicon-on-insulator substrate 200, a germanium-on-insulator substrate 200, a glass substrate 200, or a III-V compound substrate 200, such as a gallium nitride substrate 200 or a gallium arsenide substrate 200. The material of the substrate 200 may be selected from materials suitable for process requirements or easy to integrate.

[0036] In some embodiments, the aluminum metal thin film layer 2011 is formed using physical vapor deposition (PVD). In other embodiments, the aluminum metal thin film layer 2011 is formed using electrochemical deposition (ECD).

[0037] The aluminum metal thin film layer 2011 is used to provide an etching basis for the subsequent formation of the aluminum metal pattern layer 201.

[0038] For example, the step of etching the aluminum metal thin film layer 2011 to form an aluminum metal pattern layer 201 includes: etching the aluminum metal thin film layer 2011 to form an aluminum metal pattern layer 201, wherein the surface of the aluminum metal pattern layer 201 has a polymer 204.

[0039] In some embodiments, the step of etching the aluminum metal thin film layer 2011 to form the aluminum metal pattern layer 201 includes: etching the aluminum metal thin film layer 2011 with a chlorine-containing gas to form the aluminum metal pattern layer 201.

[0040] Specifically, in the step of etching the aluminum metal thin film layer 2011, a combination gas of N2, Cl2 and BCl3 is used as the etching gas. Among them, BCl3 can react with the natural oxide film (not shown in the figure) on the surface of the aluminum metal thin film layer 2011 as follows: .

[0041] This removes the oxide layer on the surface of the aluminum metal thin film layer 2011, allowing the etching gas to directly contact the aluminum and achieve anisotropic etching. Simultaneously, the AlCl3 generated by the reaction of Cl2 with Al in the aluminum metal thin film layer 2011 reacts with the mask layer to form polymer 204.

[0042] For example, after forming the aluminum metal thin film layer 2011 and before forming the mask layer on the aluminum metal thin film layer 2011, a barrier film layer 2021 is formed on the aluminum metal thin film layer 2011.

[0043] The barrier film layer 2021 is used as an etching stop layer during the aluminum etching process to precisely control the etching endpoint.

[0044] In some implementations, in the step of forming a barrier film layer 2021 on the aluminum metal thin film layer 2011, the barrier film layer 2021 comprises TiN.

[0045] In some implementations, the barrier layer 202 is formed using physical vapor deposition (PVD). In other embodiments, the barrier film layer 2021 is formed using electrochemical deposition (ECD).

[0046] In the step of forming a mask layer on the aluminum metal thin film layer 2011, the mask layer is a patterned photoresist, the chemical formula of which can be represented as (CH). X .

[0047] refer to Figure 3 The mask layer is exposed and developed to form a mask pattern 203; the aluminum metal thin film layer 2011 is etched using the mask pattern 203 as a mask to form an aluminum metal pattern layer 201; and the mask pattern 203 is removed.

[0048] The mask pattern 203 is used to define the size and position of the aluminum metal pattern layer 201.

[0049] In the step of etching the aluminum metal thin film layer 2011, the barrier thin film layer 2021 is etched to form the barrier layer 202.

[0050] In some embodiments, the step of removing the mask pattern 203 includes removing the mask pattern 203 by means of an oxidizing gas.

[0051] In a specific embodiment, the step of removing the mask pattern 203 by oxidizing gas includes oxygen.

[0052] Specifically, in Figure 3 Based on reference Figure 4The process of removing the mask pattern 203 includes two steps: in the first step, the removal time is 10s to 30s, the pressure is 5 Torr to 10 Torr, the power supply is 800W to 1200W, the temperature is 100℃ to 150℃, and the water vapor flow rate is 1000sccm to 2000sccm; in the second step, the removal time is 50s to 100s, the pressure is 5 to 10 Torr, the power supply is 800 to 1200W, the temperature is 100 to 150℃, the water vapor flow rate is 1000sccm to 2000sccm, and the oxygen flow rate is 100sccm to 200sccm.

[0053] The first step is used to soften and clean the residue on the surface of the aluminum metal pattern layer 201 using water vapor, while the low temperature will not cause the mask layer to harden; the second step is used to remove the mask pattern 203.

[0054] The residue includes residue from the mask layer and polymer 204.

[0055] For example, the chemical formula for the reaction of the mask pattern 203 with oxygen is (CH). X +2O→CO2, thus it can be seen that the gaseous product CO2 generated by the above reaction can be carried out of the cavity with water vapor. However, the method of removing the mask pattern 203 with oxygen cannot completely remove the mask pattern 203, and there are still residual mask patterns 203 on the barrier layer 202.

[0056] refer to Figure 5 The aluminum metal pattern layer 201 is etched and then cleaned, and the etch cleaning is a dry cleaning method.

[0057] For example, the step of etching and cleaning the aluminum metal pattern layer 201 includes: etching and cleaning the aluminum metal pattern layer 201 with an etching and cleaning gas, wherein the etching and cleaning gas includes an oxide element, and the oxide element has a stronger oxidizing power than chlorine.

[0058] In some embodiments, the step of etching and cleaning the aluminum metal pattern layer 201 includes: etching and cleaning the aluminum metal pattern layer 201 with a fluorine-containing gas.

[0059] In a specific embodiment, the step of etching and cleaning the aluminum metal pattern layer 201 with a fluorine-containing gas includes: etching and cleaning the aluminum metal pattern layer 201 with at least one gas selected from CF4 and SF6.

[0060] Polymer 204 can react with fluorine-containing gases as follows: CCl X (polymer) + F → CFX +Cl.

[0061] Because fluorine radicals are more electronegative than chlorine radicals, fluorine radicals in fluorine-containing gases attack carbon-chlorine bonds (C-Cl) to generate volatile fluorocarbon products, while releasing chlorine radicals that decompose the chlorine-containing polymer 204 generated by etching the aluminum metal pattern layer 201.

[0062] In some embodiments, the concentration of fluorine radicals in CF4 is lower than that in SF6, and SF6 has a better Cl ion replacement effect, resulting in better removal of polymer 2O4 by SF6. Increasing the proportion of SF6 introduced accelerates the removal of polymer 2O4.

[0063] In a specific embodiment, in Figure 5 Based on reference Figure 4 The aluminum metal pattern layer 201 is etched and then cleaned in two steps. In the third step, the resist removal time is 10-20 seconds, the pressure is 5-10 Torr, the power supply is 800-1200W, the temperature is 250-280℃, and the water vapor flow rate is 1000-2000 sccm. In the fourth step, the resist removal time is 50-100 seconds, the pressure is 5-10 Torr, the power supply is 800-1200W, the temperature is 250-280℃, the water vapor flow rate is 1000-2000 sccm, the oxygen flow rate is 100-200 sccm, the nitrogen flow rate is 200-400 sccm, and the CF4 or SF6 flow rate is 5-10 sccm.

[0064] In some embodiments, the step of etching and cleaning the aluminum metal pattern layer 201 and the mask pattern 203 includes: etching and cleaning the aluminum metal pattern layer 201 and the remaining mask pattern 203 to expose the barrier layer 202.

[0065] The remaining mask pattern 203 can react with fluorine-containing gas as follows: F + (CH) X → Organofluorine compounds (CF) x COF2).

[0066] It can be seen that after etching and cleaning the aluminum metal pattern layer 201 with at least one of CF4 and SF6 gases, the polymer 204 and the remaining mask pattern 203 can be removed simultaneously.

[0067] The third step is used to soften the mask pattern 203, and the fourth step is used to remove the polymer 204 and the remaining mask pattern 203.

[0068] In the above scheme, dry cleaning is used to clean the etched aluminum metal pattern layer 201, which can remove the polymer 204 on the surface of the aluminum metal pattern layer 201 without damaging the aluminum metal pattern layer 201, thereby improving the removal efficiency of polymer 204 and thus improving device performance.

[0069] Furthermore, the dry cleaning method in the technical solution of the present invention can remove the polymer 204 and the residual mask pattern 203 at the same time, ensuring that there is no mask pattern 203 residue on the aluminum metal pattern layer 201, thereby improving the reliability of the device.

[0070] refer to Figure 6 After etching and cleaning the aluminum metal pattern layer 201, a barrier layer 202 of a certain thickness is etched.

[0071] In some embodiments, in the step of etching a portion of the thickness of the barrier layer 202, the etching gas includes NF3.

[0072] The barrier layer 202 can react with NF3 to generate TiF4 and N2. Both TiF4 and N2 are volatile and can be removed, thus preventing them from adhering to the barrier layer 202 and the aluminum metal pattern layer 201.

[0073] This shows that no impurity material is generated after NF3 reacts with the barrier layer 202.

[0074] Specifically, after introducing CF4 or SF6 in the fourth step to remove polymer 204 and the remaining mask pattern 203, NF3 is further added under the same reaction conditions to remove a portion of the barrier layer 202, with the NF3 introduction amount being 10 sccm to 20 sccm.

[0075] Since the mask pattern 203 will combine with the barrier layer 202, it is difficult to remove the mask pattern 203 that is combined with the barrier layer 202 even if CF4 or SF6 is introduced. Therefore, the mask pattern 203 will still remain.

[0076] The above solution removes part of the barrier layer 202 by introducing NF3 gas, thereby removing the mask pattern 203 attached to the barrier layer 202, ensuring that there is no mask pattern 203 residue on the aluminum metal pattern layer 201, and improving the reliability of the device.

[0077] refer to Figure 7 After etching a portion of the thickness of the barrier layer 202, the barrier layer 202 is passivated to form a passivation layer 205.

[0078] exist Figure 7 Based on reference Figure 4The passivation process of the barrier layer 202 includes: passivating the barrier layer 202 in two steps, wherein, in the first step, the adhesive removal time is 10s to 20s, the pressure is 5 Torr to 10 Torr, the power supply is 800W to 1200W, the temperature is 250℃ to 280℃, and the water vapor introduction rate is 1000sccm to 2000sccm; in the second step, the adhesive removal time is 50s to 100s, the pressure is 5 Torr to 10 Torr, the power supply is 800W to 1200W, the temperature is 250℃ to 280℃, the water vapor introduction rate is 1000sccm to 2000sccm, the oxygen introduction rate is 800sccm to 1000sccm, and the nitrogen introduction rate is 200sccm to 400sccm.

[0079] Among them, the barrier layer 202 can react with oxygen to form a passivation layer 205, and the material of the passivation layer 205 is TiO2.

[0080] After etching a portion of the barrier layer 202, its surface is exposed. The surface of barrier layer 202 is highly chemically reactive, and residual fluorine or chlorine radicals from the process will continue to attack it. Therefore, passivation protection is necessary. The TiO2 formed after passivation is chemically stable, preventing further etching and stabilizing the electrical properties of the barrier layer 202 surface.

[0081] In summary, dry cleaning of the etched aluminum metal pattern layer 201 can remove the polymer 204 from the surface of the aluminum metal pattern layer 201 without damaging the aluminum metal pattern layer 201, thereby improving the removal efficiency of polymer 204 and thus improving device performance.

[0082] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method for removing residues from an aluminum etching process, characterized in that, include: Provide substrate; An aluminum metal thin film layer is formed on the substrate; The aluminum metal thin film layer is etched to form an aluminum metal pattern layer; The aluminum metal pattern layer is etched and then cleaned, and the post-etching cleaning is a dry cleaning method.

2. The method for removing residues from an aluminum etching process as described in claim 1, characterized in that, The step of etching the aluminum metal thin film layer to form an aluminum metal pattern layer includes: etching the aluminum metal thin film layer to form an aluminum metal pattern layer, wherein the surface of the aluminum metal pattern layer has a polymer; The step of etching and cleaning the aluminum metal pattern layer includes: etching and cleaning the aluminum metal pattern layer to remove the polymer.

3. The method for removing residues from the aluminum etching process as described in claim 2, characterized in that, The step of etching the aluminum metal thin film layer to form an aluminum metal pattern layer includes: etching the aluminum metal thin film layer with a chlorine-containing gas to form an aluminum metal pattern layer; The step of etching and cleaning the aluminum metal pattern layer includes: cleaning the aluminum metal pattern layer with an etching and cleaning gas, wherein the etching and cleaning gas includes an oxidizing element, and the oxidizing element has a stronger oxidizing power than chlorine.

4. The method for removing residues from an aluminum etching process as described in claim 3, characterized in that, The step of etching and cleaning the aluminum metal pattern layer includes: etching and cleaning the aluminum metal pattern layer with a fluorine-containing gas.

5. The method for removing residues from an aluminum etching process as described in claim 4, characterized in that, The step of etching and cleaning the aluminum metal patterned layer with a fluorine-containing gas includes: etching and cleaning the aluminum metal patterned layer with at least one gas selected from CF4 and SF6.

6. The method for removing residues from an aluminum etching process as described in any one of claims 1 to 5, characterized in that, Also includes: After forming an aluminum metal thin film layer on the substrate, the aluminum metal thin film layer is etched, and before forming an aluminum metal pattern layer, a mask pattern is formed on the aluminum metal thin film layer; The step of etching the aluminum metal thin film layer to form an aluminum metal pattern layer includes: using the mask pattern as a mask, etching the aluminum metal thin film layer to form an aluminum metal pattern layer; The step of etching and cleaning the aluminum metal pattern layer includes: etching and cleaning the aluminum metal pattern layer and the mask pattern.

7. The method for removing residues from an aluminum etching process as described in claim 6, characterized in that, In the step of forming a mask pattern on the aluminum metal thin film layer, the mask pattern is a patterned photoresist.

8. The method for removing residues from an aluminum etching process as described in claim 6, characterized in that, Also includes: Using the mask pattern as a mask, the aluminum metal thin film layer is etched to form an aluminum metal pattern layer. Before the aluminum metal pattern layer and the mask pattern are etched and cleaned, the mask pattern is removed. The step of etching and cleaning the aluminum metal pattern layer and the mask pattern includes: etching and cleaning the aluminum metal pattern layer and the remaining mask pattern.

9. The method for removing residues from an aluminum etching process as described in claim 8, characterized in that, The steps for removing the mask pattern include: removing the mask pattern using an oxidizing gas.

10. The method for removing residues from an aluminum etching process as described in claim 9, characterized in that, In the step of removing the mask pattern by oxidizing gas, the oxidizing gas includes oxygen.

11. The method for removing residues from an aluminum etching process as described in claim 6, characterized in that, Also includes: After forming an aluminum metal thin film layer on the substrate, the aluminum metal thin film layer is etched, and before forming an aluminum metal pattern layer, a barrier layer is formed on the aluminum metal thin film layer; The step of etching and cleaning the aluminum metal pattern layer and the mask pattern includes: etching and cleaning the aluminum metal pattern layer and the mask pattern to remove the mask pattern and expose the barrier layer; The method further includes: etching and cleaning the aluminum metal pattern layer, and then etching a barrier layer of a certain thickness.

12. The method for removing residues from an aluminum etching process as described in claim 11, characterized in that, In the step of etching a partial thickness of the barrier layer, the etching gas includes NF3.

13. The method for removing residues from an aluminum etching process as described in claim 11, characterized in that, Also includes: After etching a portion of the barrier layer, the barrier layer is passivated.

14. The method for removing residues from an aluminum etching process as described in claim 11, characterized in that, In the step of forming a barrier layer on the aluminum metal thin film layer, the barrier layer comprises TiN.

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